研究者詳細

顔写真

ソウ リ チユウ
Chuang Lu Chung
Chuang Lu Chung
所属
金属材料研究所 材料物性研究部 結晶物理学研究部門
職名
助教
学位
  • 博士(物理学)(東北大学)

  • M.S.(台湾 国立雲林科技大学)

e-Rad 研究者番号
90911123
Researcher ID

経歴 3

  • 2021年4月 ~ 継続中
    東北大学 金属材料研究所 結晶物理学研究部門 助教

  • 2019年10月 ~ 2021年3月
    東北大学 金属材料研究所 結晶物理学研究部門 学術研究員

  • 2016年10月 ~ 2019年9月
    東北大学 金属材料研究所 結晶物理学研究部門 リサーチアシスタント

所属学協会 2

  • 日本金属学会

    2018年3月 ~ 継続中

  • 日本結晶成長学会

    2017年11月 ~ 継続中

研究キーワード 5

  • 結晶粒界

  • その場観察

  • 融液成長

  • シリコン

  • 結晶成長

研究分野 1

  • 自然科学一般 / 半導体、光物性、原子物理 / 結晶成長

論文 17

  1. In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon 国際誌 国際共著 査読有り

    Peiyao Hao, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Lili Zheng

    Journal of Materials Science 59 (39) 18446-18460 2024年10月1日

    出版者・発行元:

    DOI: 10.1007/s10853-024-10277-4  

    ISSN:0022-2461

    eISSN:1573-4803

  2. Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon 査読有り

    Fan Yang, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar

    Journal of Crystal Growth 639 127722-127722 2024年8月

    出版者・発行元: Elsevier BV

    DOI: 10.1016/j.jcrysgro.2024.127722  

    ISSN:0022-0248

  3. Misorientation increase of small-angle grain boundaries during directional solidification of silicon 査読有り

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    Journal of Crystal Growth 127822-127822 2024年7月

    出版者・発行元: Elsevier BV

    DOI: 10.1016/j.jcrysgro.2024.127822  

    ISSN:0022-0248

  4. Vicinal (111) surfaces at Si solid-liquid interface during unidirectional solidification 査読有り

    Shashank Shekhar Mishra, Lu-Chung Chuang, Jun Nozawa, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar

    Scripta Materialia 2024年7月

    DOI: 10.1016/j.scriptamat.2024.116116  

  5. In situ study of growth kinetics of {1 0 0} and {1 1 0} crystal/melt interfaces during unidirectional solidification of silicon 査読有り

    Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Thierry Duffar, Kozo Fujiwara

    Journal of Crystal Growth 2024年2月

    DOI: 10.1016/j.jcrysgro.2023.127524  

  6. Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon 査読有り

    Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    Journal of Crystal Growth 593 126784-126784 2022年9月

    出版者・発行元: Elsevier BV

    DOI: 10.1016/j.jcrysgro.2022.126784  

    ISSN:0022-0248

  7. In situ observation of solidification and subsequent evolution of Ni-Si eutectics 査読有り

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    Scripta Materialia 211 114513-114513 2022年4月

    出版者・発行元: Elsevier BV

    DOI: 10.1016/j.scriptamat.2022.114513  

    ISSN:1359-6462

  8. Dynamics at crystal/melt interface during solidification of multicrystalline silicon 査読有り

    Kozo Fujiwara, Lu-Chung Chuang, Kensaku Maeda

    HIGH TEMPERATURE MATERIALS AND PROCESSES 41 (1) 31-47 2022年2月

    DOI: 10.1515/htmp-2022-0020  

    ISSN:0334-6455

    eISSN:2191-0324

  9. Twin boundary formation at a grain-boundary groove during the directional solidification of InSb 国際誌 査読有り

    Keiji Shiga, Atsuko Takahashi, Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    JOURNAL OF CRYSTAL GROWTH 577 126403-126403 2022年1月

    DOI: 10.1016/j.jcrysgro.2021.126403  

    ISSN:0022-0248

    eISSN:1873-5002

  10. Dendritic Growth in Si1-xGex Melts 国際共著 査読有り

    Genki Takakura, Mukannan Arivanandhan, Kensaku Maeda, Lu-Chung Chuang, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    CRYSTALS 11 (7) 761-761 2021年7月

    DOI: 10.3390/cryst11070761  

    ISSN:2073-4352

    eISSN:2073-4352

  11. Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon 査読有り

    Chuang, L.-C., Kiguchi, T., Kodama, Y., Maeda, K., Shiga, K., Morito, H., Fujiwara, K.

    Scripta Materialia 172 105-109 2019年

    DOI: 10.1016/j.scriptamat.2019.07.018  

    ISSN:1359-6462

  12. A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification 査読有り

    Chuang, L.-C., Maeda, K., Shiga, K., Morito, H., Fujiwara, K.

    Scripta Materialia 167 46-50 2019年

    DOI: 10.1016/j.scriptamat.2019.03.037  

    ISSN:1359-6462

  13. Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon 国際誌 国際共著 査読有り

    Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Miller, W., Fujiwara, K.

    Materialia 7 2019年

    DOI: 10.1016/j.mtla.2019.100357  

    ISSN:2589-1529

  14. Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon 査読有り

    Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Fujiwara, K.

    Materialia 3 347-352 2018年

    DOI: 10.1016/j.mtla.2018.08.034  

    ISSN:2589-1529

  15. In situ observation of interaction between grain boundaries during directional solidification of Si 国際共著 査読有り

    Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Miller, W., Fujiwara, K.

    Scripta Materialia 148 37-41 2018年

    DOI: 10.1016/j.scriptamat.2018.01.020  

    ISSN:1359-6462

  16. Alternative hybrid electrolytes based on a series of bis(trialkoxysilyl)alkanes and 3-(trihydroxysilyl)-1-propane sulfonic acid applied in gas diffusion electrodes of proton exchange membrane fuel cells 査読有り

    C.W. Lin, L.C. Chung, R.S. Veerapur, F.C. Yang

    Journal of Power Sources 196 (3) 1069-1077 2011年2月

    出版者・発行元: Elsevier BV

    DOI: 10.1016/j.jpowsour.2010.08.024  

    ISSN:0378-7753

  17. Proton-conducting membranes with high selectivity from cross-linked poly(vinyl alcohol) and poly(vinyl pyrrolidone) for direct methanol fuel cell applications 査読有り

    Y.F. Huang, L.C. Chuang, A.M. Kannan, C.W. Lin

    Journal of Power Sources 186 (1) 22-28 2009年1月

    出版者・発行元: Elsevier BV

    DOI: 10.1016/j.jpowsour.2008.09.072  

    ISSN:0378-7753

︎全件表示 ︎最初の5件までを表示

講演・口頭発表等 29

  1. Twin nucleation at symmetric Σ9 grain boundaries during directional solidification of Si

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    第53回結晶成長国内会議 2024年11月18日

  2. Growth behavior of small-angle grain boundaries during directional solidification of Si 国際会議 招待有り

    Lu-Chung Chuang, Kozo Fujiwara

    SMTBEA-2024 2024年7月2日

  3. Growth behavior of grain boundaries during directional solidification of Si 招待有り

    Lu-Chung Chuang, Kozo Fujiwara

    Internal seminar at IM2NP, CNRS 2024年4月11日

  4. In situ observation of interfacial grooves of Σ9 grain boundaries during directional solidification of Si

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    第52回結晶成長国内会議 2023年12月5日

  5. Dynamics of small-angle grain boundaries and lattice dislocations during directional solidification of multi-crystalline silicon 招待有り

    Lu-Chung Chuang, Kozo Fujiwara

    International Workshop on Energy Materials and Modelingfor Future Technology (EMMFT-2023) 2023年11月27日

  6. Groove formation of Σ9 grain boundaries at solid/melt interface of Si

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    日本金属学会2023年秋期(第173回)講演大会 2023年9月22日

  7. In situ observation of growth behavior of small-angle grain boundaries in multicrystalline silicon during directional solidification 招待有り

    Lu-Chung Chuang, Kozo Fujiwara

    23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) 2023年8月16日

  8. Growth dynamics of lattice dislocations and small-angle grain boundaries in multicrystalline silicon during directional solidification 国際会議

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    20th International Conference on Crystal Growth and Epitaxy (ICCGE-20) 2023年7月31日

  9. Dislocation generation from small-angle grain boundaries during directional solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    The 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33) 2022年11月16日

  10. In-situ observation of solidification and subsequent evolution of Ni-Si eutectics

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    第51回結晶成長国内会議 2022年10月31日

  11. Small-angle grain boundaries as sources of generation and absorption of dislocations during directional solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    日本金属学会2022年秋期(第171回)講演大会 2022年9月23日

  12. Decomposition of small-angle grain boundaries during directional solidification of multicrystalline silicon 国際会議 招待有り

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    11th International Workshop on Crystalline Silicon for Solar Cells & 4th Silicon Materials Workshop (CSSC11 & SiMat4) 2022年4月21日

  13. Small-angle grain boundaries as sinks for lattice dislocations during directional solidification of silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    第50回結晶成長国内会議 2021年10月29日

  14. Interactions of small-angle grain boundaries with lattice dislocations during solidification of silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    日本金属学会2021年秋期(第169回)講演大会 2021年9月15日

  15. In-situ observation of eutectic growth of binary Ni-Si alloy

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    日本金属学会2021年春期(第168回)講演大会 2021年3月19日

  16. Formation and growth behavior of small-angle grain boundaries during directional solidification of multicrystalline silicon 国際会議

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    The 8th Asian Conference on Crystal Growthand Crystal Technology (CGCT-8) 2021年3月1日

  17. In-situ observation of crystal-melt interface of Ni-Si binary system

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    第49回結晶成長国内会議 2020年11月11日

  18. In-situ observation of solidification of binary Ni-Si melt

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    日本金属学会2020年秋期(第167回)講演大会 2020年9月18日

  19. Splitting of small-angle grain boundaries during directional solidification of silicon

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    日本金属学会2020年春期(第166回)講演大会 2020年3月19日

  20. Unsteady growth of grain boundary groove during solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    第48回結晶成長国内会議 2019年10月30日

  21. On the growth behavior of the grooves at grain/grain/melt triple phase boundary during solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    日本金属学会2019年秋期(第165回)講演大会 2019年9月12日

  22. Grain boundary evolutions and interactions at the crystal/melt interface of silicon during directional solidification 国際会議 国際共著

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Wolfram Miller, Kozo Fujiwara

    19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) 2019年7月30日

  23. In situ observation of interaction between grain boundaries during directional solidification of Si 国際会議 国際共著 招待有り

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Wolfram Miller, Kozo Fujiwara

    3rd German Polish Conference on Crystal Growth (GPCCG-3), Poznan, Poland 2019年3月20日

  24. Influence of grain boundary dislocations on the direction of a small-angle grain boundary in multicrystalline silicon during directional solidification 国際会議 招待有り

    Lu-Chung Chuang, Takanori Kiguchi, Yumiko Kodama, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    International Symposium & School on Crystal Growth Fundamentals (ISSCGF2018) 2018年11月5日

  25. Initiation and development of small-angle grain boundaries during directional solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Takanori Kiguchi, Yumiko Kodama, Kozo Fujiwara

    第47回結晶成長国内会議 2018年11月2日

  26. Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    日本金属学会2018年秋期(第163回)講演大会 2018年9月20日

  27. Interaction between grain boundaries at the crystal/melt interface of mc-Si 国際会議 招待有り

    Lu-Chung Chuang

    Colloquium at Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany 2018年6月20日

  28. Interactions between small-angle grain boundaries and Σ3 twin boundaries during solidification of multi-crystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    日本金属学会2018年春期(第162回)講演大会 2018年3月21日

  29. Interactions between grain boundaries during solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    第46回結晶成長国内会議 2017年11月29日

︎全件表示 ︎最初の5件までを表示

産業財産権 1

  1. 結晶の育成装置およびその保温カバー

    荘履中, 游智傑, 藍文杰, 錢俊逸, 李依晴, 徐文慶

    特許6085325

    産業財産権の種類: 特許権

    権利者: 環球晶圓股ふん有限公司

共同研究・競争的資金等の研究課題 1

  1. Investigation of growth dynamics of faceted grain/grain/melt grain boundary junction during directional solidification of Si

    CHUANG LUCHUNG

    2021年8月 ~ 2023年3月

    詳細を見る 詳細を閉じる

    This project started last October. I have achieved two advances for performing experiments in this study. One is the development of the technique for cutting oriented crystal seeds accurately. The oriented seeds are used to create coincidence site lattice grain boundaries (CSL GBs) with accuracies of better than 1 degree. The other advance is the modification of current crystal growth furnace. The thermocouples with higher operating temperature have been installed on the furnace. The temperature control loop has been re-designed and improved. Both the temperature gradient and the cooling rate of the crystallization process can now be controlled with high precision. These two advances pave the way for following in-situ experiments. The Si seeds for generating Σ9 GBs are prepared. Preliminary tests showed that the Si seeds can be partly melted without loss of the initial crystallinity and the solid/melt interface are able to move steadily due to the improved controllability of the modified furnace. The in-situ experiments for Σ9 GBs are just beginning and data collection is continuing. Before the seeds were prepared successfully with satisfying accuracy, I tested the ability of the modified furnace with bulk Si and Ni-Si alloy. This process generated interesting observations, and I have published these results.