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Chuang Lu Chung

Section

Institute for Materials Research

Job title

Assistant Professor

Degree

researchmap

https://researchmap.jp/luchung.chuang

J-GLOBAL ID

202101006689007050

e-Rad No.

90911123

ORCID

https://orcid.org/0000-0002-8691-3577

Researcher ID

AAL-5547-2021

Research History 3

2021/04 - Present

Tohoku University　Institute for Materials Research Crystal Physics　Assistant Professor
2019/10 - 2021/03

Tohoku University　Institute for Materials Research Crystal Physics　Academic Fellow
2016/10 - 2019/09

Tohoku University　Institute for Materials Research Crystal Physics　Research Assistant

Professional Memberships 2

The Japan Institute of Metals and Materials

2018/03 - Present
The Japanese Association for Crystal Growth

2017/11 - Present

Research Interests 5

Grain boundary
In situ observation
Melt growth
Silicon
Crystal growth

Research Areas 1

Natural sciences / Semiconductors, optical and atomic physics / Crystal growth

Papers 21

In situ investigation of the destabilisation of the solid–liquid interface during solidification in pure silicon and in intentionally copper-contaminated silicon

Sirine Houam, Lu Chung Chuang, Kozo Fujiwara, Gabrielle Regula, Guillaume Reinhart, Isabelle Périchaud, Fabrice Guittonneau, Laurent Barrallier, Nathalie Mangelinck-Noël

Journal of Crystal Growth　2027/01

DOI： 10.1016/j.jcrysgro.2026.128872 　
Tailoring grain structure and thermal transport in rapidly crystallized indium selenide to improve thermoelectric performance

M. Sivakumar, J. Prasath, R. Annie Victoria Rose, S. Senthamizh Raja, J. Mani, A. Sampathu, Lu-Chung Chuang, Kozo Fujiwara, Ramasamy Jayavel, M. Arivanandhan

Applied Physics A　132　(8)　2026/07/29
Publisher: Springer Science and Business Media LLC
DOI： 10.1007/s00339-026-09990-5 　

ISSN： 0947-8396

eISSN： 1432-0630
Grain structure–controlled growth of InSb crystals: a grain boundary engineering approach for enhanced thermoelectric performance

M. Sivakumar, J. Prasath, S. Senthamizh Raja, R. Annie Victoria Rose, J. Mani, L. C. Chuang, Sri Sai Samhitha Gadhavajhala, Bhuvanesh Srinivasan, R. Jayavel, K. Fujiwara, M. Arivanandhan

Materials Advances　7　(12)　6242-6253　2026
Publisher: Royal Society of Chemistry (RSC)
DOI： 10.1039/d6ma00062b 　

eISSN： 2633-5409

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The grain structure of InSb crystals was controlled by varying the cooling rates. The ice-water-quenched sample shows high grain-boundary density, which suppressed thermal conductivity by phonon scattering, thereby improved zT values.
Multistep Crystallization of the Heteroepitaxially Grown Binary Colloidal Crystals Peer-reviewed

Jun Nozawa, Masahide Sato, Satoshi Uda, Lu-Chung Chuang, Kozo Fujiwara

Crystal Growth & Design　2025/08/18
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.cgd.5c00963 　

ISSN： 1528-7483

eISSN： 1528-7505
In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon International-journal International-coauthorship Peer-reviewed

Peiyao Hao, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Lili Zheng

Journal of Materials Science　59　(39)　18446-18460　2024/10/01
Publisher: Springer Science and Business Media LLC
DOI： 10.1007/s10853-024-10277-4 　

ISSN： 0022-2461

eISSN： 1573-4803

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The ⟨110⟩ directional solidification of silicon under varying overall temperature gradients was investigated using an in situ observation system. The growth velocity of an atomically rough interface was found to decrease with increasing temperature gradient. A theoretical model of the thermal field taking undercooling into account was developed to describe this phenomenon and was demonstrated to be valid. The results of this work indicate that the reported linear relationship between growth velocity (V) and undercooling (ΔT), given by V (mm s^−1) = 120ΔT (K), is most accurate in the case of a rough interface. In the case that the overall temperature gradient is small, the melting point isotherm moves rapidly such that it becomes more difficult for the interface to keep pace with the isotherm compared with a large temperature gradient. This effect leads to increased undercooling at the interface and consequently a rapid growth velocity. Thermal field calculations confirm that a rapid increase in the ratio of the temperature gradient in the crystal to that in the melt should increase the latent heat release, again providing a more rapid growth velocity.
Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon Peer-reviewed

Fan Yang, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar

Journal of Crystal Growth　639　127722-127722　2024/08
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2024.127722 　

ISSN： 0022-0248
Misorientation increase of small-angle grain boundaries during directional solidification of silicon Peer-reviewed

Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

Journal of Crystal Growth　127822-127822　2024/07
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2024.127822 　

ISSN： 0022-0248
Vicinal (111) surfaces at Si solid-liquid interface during unidirectional solidification Peer-reviewed

Shashank Shekhar Mishra, Lu-Chung Chuang, Jun Nozawa, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar

Scripta Materialia　2024/07

DOI： 10.1016/j.scriptamat.2024.116116 　
In situ study of growth kinetics of {1 0 0} and {1 1 0} crystal/melt interfaces during unidirectional solidification of silicon Peer-reviewed

Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Thierry Duffar, Kozo Fujiwara

Journal of Crystal Growth　2024/02

DOI： 10.1016/j.jcrysgro.2023.127524 　
Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon Peer-reviewed

Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

Journal of Crystal Growth　593　126784-126784　2022/09
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2022.126784 　

ISSN： 0022-0248
In situ observation of solidification and subsequent evolution of Ni-Si eutectics Peer-reviewed

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

Scripta Materialia　211　114513-114513　2022/04
Publisher: Elsevier BV
DOI： 10.1016/j.scriptamat.2022.114513 　

ISSN： 1359-6462
Dynamics at crystal/melt interface during solidification of multicrystalline silicon Peer-reviewed

Kozo Fujiwara, Lu-Chung Chuang, Kensaku Maeda

HIGH TEMPERATURE MATERIALS AND PROCESSES　41　(1)　31-47　2022/02

DOI： 10.1515/htmp-2022-0020 　

ISSN： 0334-6455

eISSN： 2191-0324
Twin boundary formation at a grain-boundary groove during the directional solidification of InSb International-journal Peer-reviewed

Keiji Shiga, Atsuko Takahashi, Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

JOURNAL OF CRYSTAL GROWTH　577　126403-126403　2022/01

DOI： 10.1016/j.jcrysgro.2021.126403 　

ISSN： 0022-0248

eISSN： 1873-5002
Dendritic Growth in Si1-xGex Melts International-coauthorship Peer-reviewed

Genki Takakura, Mukannan Arivanandhan, Kensaku Maeda, Lu-Chung Chuang, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

CRYSTALS　11　(7)　761-761　2021/07

DOI： 10.3390/cryst11070761 　

ISSN： 2073-4352

eISSN： 2073-4352
Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon Peer-reviewed

Chuang, L.-C., Kiguchi, T., Kodama, Y., Maeda, K., Shiga, K., Morito, H., Fujiwara, K.

Scripta Materialia　172　105-109　2019

DOI： 10.1016/j.scriptamat.2019.07.018 　

ISSN： 1359-6462
A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification Peer-reviewed

Chuang, L.-C., Maeda, K., Shiga, K., Morito, H., Fujiwara, K.

Scripta Materialia　167　46-50　2019

DOI： 10.1016/j.scriptamat.2019.03.037 　

ISSN： 1359-6462
Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon International-journal International-coauthorship Peer-reviewed

Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Miller, W., Fujiwara, K.

Materialia　7　2019

DOI： 10.1016/j.mtla.2019.100357 　

ISSN： 2589-1529
Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon Peer-reviewed

Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Fujiwara, K.

Materialia　3　347-352　2018

DOI： 10.1016/j.mtla.2018.08.034 　

ISSN： 2589-1529
In situ observation of interaction between grain boundaries during directional solidification of Si International-coauthorship Peer-reviewed

Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Miller, W., Fujiwara, K.

Scripta Materialia　148　37-41　2018

DOI： 10.1016/j.scriptamat.2018.01.020 　

ISSN： 1359-6462
Alternative hybrid electrolytes based on a series of bis(trialkoxysilyl)alkanes and 3-(trihydroxysilyl)-1-propane sulfonic acid applied in gas diffusion electrodes of proton exchange membrane fuel cells Peer-reviewed

C.W. Lin, L.C. Chung, R.S. Veerapur, F.C. Yang

Journal of Power Sources　196　(3)　1069-1077　2011/02
Publisher: Elsevier BV
DOI： 10.1016/j.jpowsour.2010.08.024 　

ISSN： 0378-7753
Proton-conducting membranes with high selectivity from cross-linked poly(vinyl alcohol) and poly(vinyl pyrrolidone) for direct methanol fuel cell applications Peer-reviewed

Y.F. Huang, L.C. Chuang, A.M. Kannan, C.W. Lin

Journal of Power Sources　186　(1)　22-28　2009/01
Publisher: Elsevier BV
DOI： 10.1016/j.jpowsour.2008.09.072 　

ISSN： 0378-7753

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Presentations 30

Growth and remelting of SiGe during directional solidification

Lu-Chung Chuang, Jun Nozawa, Kozo Fujiwara

JCCG-54　2025/11/11
Twin nucleation at symmetric Σ9 grain boundaries during directional solidification of Si

Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

JCCG-53　2024/11/18
Growth behavior of small-angle grain boundaries during directional solidification of Si International-presentation Invited

Lu-Chung Chuang, Kozo Fujiwara

SMTBEA-2024　2024/07/02
Growth behavior of grain boundaries during directional solidification of Si Invited

Lu-Chung Chuang, Kozo Fujiwara

Internal seminar at IM2NP, CNRS　2024/04/11
In situ observation of interfacial grooves of Σ9 grain boundaries during directional solidification of Si

Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

JCCG-52　2023/12/05
Dynamics of small-angle grain boundaries and lattice dislocations during directional solidification of multi-crystalline silicon Invited

Lu-Chung Chuang, Kozo Fujiwara

International Workshop on Energy Materials and Modelingfor Future Technology (EMMFT-2023)　2023/11/27
Groove formation of Σ9 grain boundaries at solid/melt interface of Si

Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

2023/09/22
In situ observation of growth behavior of small-angle grain boundaries in multicrystalline silicon during directional solidification Invited

Lu-Chung Chuang, Kozo Fujiwara

23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23)　2023/08/16
Growth dynamics of lattice dislocations and small-angle grain boundaries in multicrystalline silicon during directional solidification International-presentation

Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

20th International Conference on Crystal Growth and Epitaxy (ICCGE-20)　2023/07/31
Dislocation generation from small-angle grain boundaries during directional solidification of multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

The 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)　2022/11/16
In-situ observation of solidification and subsequent evolution of Ni-Si eutectics

Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

JCCG-51　2022/10/31
Small-angle grain boundaries as sources of generation and absorption of dislocations during directional solidification of multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

2022/09/23
Decomposition of small-angle grain boundaries during directional solidification of multicrystalline silicon International-presentation Invited

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

11th International Workshop on Crystalline Silicon for Solar Cells & 4th Silicon Materials Workshop (CSSC11 & SiMat4)　2022/04/21
Small-angle grain boundaries as sinks for lattice dislocations during directional solidification of silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

JCCG-50　2021/10/29
Interactions of small-angle grain boundaries with lattice dislocations during solidification of silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

2021/09/15
In-situ observation of eutectic growth of binary Ni-Si alloy

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

2021/03/19
Formation and growth behavior of small-angle grain boundaries during directional solidification of multicrystalline silicon International-presentation

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

The 8th Asian Conference on Crystal Growthand Crystal Technology (CGCT-8)　2021/03/01
In-situ observation of crystal-melt interface of Ni-Si binary system

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

JCCG-49　2020/11/11
In-situ observation of solidification of binary Ni-Si melt

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

2020/09/18
Splitting of small-angle grain boundaries during directional solidification of silicon

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

2020/03/19
Unsteady growth of grain boundary groove during solidification of multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

JCCG-48　2019/10/30
On the growth behavior of the grooves at grain/grain/melt triple phase boundary during solidification of multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

2019/09/12
Grain boundary evolutions and interactions at the crystal/melt interface of silicon during directional solidification International-presentation International-coauthorship

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Wolfram Miller, Kozo Fujiwara

19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)　2019/07/30
In situ observation of interaction between grain boundaries during directional solidification of Si International-presentation International-coauthorship Invited

Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Wolfram Miller, Kozo Fujiwara

3rd German Polish Conference on Crystal Growth (GPCCG-3), Poznan, Poland　2019/03/20
Influence of grain boundary dislocations on the direction of a small-angle grain boundary in multicrystalline silicon during directional solidification International-presentation Invited

Lu-Chung Chuang, Takanori Kiguchi, Yumiko Kodama, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

International Symposium & School on Crystal Growth Fundamentals (ISSCGF2018)　2018/11/05
Initiation and development of small-angle grain boundaries during directional solidification of multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Takanori Kiguchi, Yumiko Kodama, Kozo Fujiwara

JCCG-47　2018/11/02
Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

2018/09/20
Interaction between grain boundaries at the crystal/melt interface of mc-Si International-presentation Invited

Lu-Chung Chuang

Colloquium at Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany　2018/06/20
Interactions between small-angle grain boundaries and Σ3 twin boundaries during solidification of multi-crystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

2018/03/21
Interactions between grain boundaries during solidification of multicrystalline silicon

Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

JCCG-46　2017/11/29

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Industrial Property Rights 1

結晶の育成装置およびその保温カバー

荘履中, 游智傑, 藍文杰, 錢俊逸, 李依晴, 徐文慶

特許6085325

Property Type: Patent

Holder: 環球晶圓股ふん有限公司

Research Projects 1

Investigation of growth dynamics of faceted grain/grain/melt grain boundary junction during directional solidification of Si

CHUANG LUCHUNG

Offer Organization: 日本学術振興会

System: 科学研究費助成事業研究活動スタート支援

Category: 研究活動スタート支援

Institution: 東北大学

2021/08 - 2023/03

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This project started last October. I have achieved two advances for performing experiments in this study. One is the development of the technique for cutting oriented crystal seeds accurately. The oriented seeds are used to create coincidence site lattice grain boundaries (CSL GBs) with accuracies of better than 1 degree. The other advance is the modification of current crystal growth furnace. The thermocouples with higher operating temperature have been installed on the furnace. The temperature control loop has been re-designed and improved. Both the temperature gradient and the cooling rate of the crystallization process can now be controlled with high precision. These two advances pave the way for following in-situ experiments. The Si seeds for generating Σ9 GBs are prepared. Preliminary tests showed that the Si seeds can be partly melted without loss of the initial crystallinity and the solid/melt interface are able to move steadily due to the improved controllability of the modified furnace. The in-situ experiments for Σ9 GBs are just beginning and data collection is continuing. Before the seeds were prepared successfully with satisfying accuracy, I tested the ability of the modified furnace with bulk Si and Ni-Si alloy. This process generated interesting observations, and I have published these results.