Details of the Researcher

PHOTO

Chuang Lu Chung
Section
Institute for Materials Research
Job title
Assistant Professor
Degree
  • 博士(物理学)(東北大学)

  • M.S.(台湾 国立雲林科技大学)

e-Rad No.
90911123
Researcher ID

Research History 3

  • 2021/04 - Present
    Tohoku University Institute for Materials Research Crystal Physics Assistant Professor

  • 2019/10 - 2021/03
    Tohoku University Institute for Materials Research Crystal Physics Academic Fellow

  • 2016/10 - 2019/09
    Tohoku University Institute for Materials Research Crystal Physics Research Assistant

Professional Memberships 2

  • The Japan Institute of Metals and Materials

    2018/03 - Present

  • The Japanese Association for Crystal Growth

    2017/11 - Present

Research Interests 5

  • Grain boundary

  • In situ observation

  • Melt growth

  • Silicon

  • Crystal growth

Research Areas 1

  • Natural sciences / Semiconductors, optical and atomic physics / Crystal growth

Papers 17

  1. In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon International-journal International-coauthorship Peer-reviewed

    Peiyao Hao, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Lili Zheng

    Journal of Materials Science 59 (39) 18446-18460 2024/10/01

    Publisher: Springer Science and Business Media LLC

    DOI: 10.1007/s10853-024-10277-4  

    ISSN: 0022-2461

    eISSN: 1573-4803

    More details Close

    The ⟨110⟩ directional solidification of silicon under varying overall temperature gradients was investigated using an in situ observation system. The growth velocity of an atomically rough interface was found to decrease with increasing temperature gradient. A theoretical model of the thermal field taking undercooling into account was developed to describe this phenomenon and was demonstrated to be valid. The results of this work indicate that the reported linear relationship between growth velocity (V) and undercooling (ΔT), given by V (mm s^−1) = 120ΔT (K), is most accurate in the case of a rough interface. In the case that the overall temperature gradient is small, the melting point isotherm moves rapidly such that it becomes more difficult for the interface to keep pace with the isotherm compared with a large temperature gradient. This effect leads to increased undercooling at the interface and consequently a rapid growth velocity. Thermal field calculations confirm that a rapid increase in the ratio of the temperature gradient in the crystal to that in the melt should increase the latent heat release, again providing a more rapid growth velocity.

  2. Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon Peer-reviewed

    Fan Yang, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar

    Journal of Crystal Growth 639 127722-127722 2024/08

    Publisher: Elsevier BV

    DOI: 10.1016/j.jcrysgro.2024.127722  

    ISSN: 0022-0248

  3. Misorientation increase of small-angle grain boundaries during directional solidification of silicon Peer-reviewed

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    Journal of Crystal Growth 127822-127822 2024/07

    Publisher: Elsevier BV

    DOI: 10.1016/j.jcrysgro.2024.127822  

    ISSN: 0022-0248

  4. Vicinal (111) surfaces at Si solid-liquid interface during unidirectional solidification Peer-reviewed

    Shashank Shekhar Mishra, Lu-Chung Chuang, Jun Nozawa, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar

    Scripta Materialia 2024/07

    DOI: 10.1016/j.scriptamat.2024.116116  

  5. In situ study of growth kinetics of {1 0 0} and {1 1 0} crystal/melt interfaces during unidirectional solidification of silicon Peer-reviewed

    Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Thierry Duffar, Kozo Fujiwara

    Journal of Crystal Growth 2024/02

    DOI: 10.1016/j.jcrysgro.2023.127524  

  6. Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon Peer-reviewed

    Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    Journal of Crystal Growth 593 126784-126784 2022/09

    Publisher: Elsevier BV

    DOI: 10.1016/j.jcrysgro.2022.126784  

    ISSN: 0022-0248

  7. In situ observation of solidification and subsequent evolution of Ni-Si eutectics Peer-reviewed

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    Scripta Materialia 211 114513-114513 2022/04

    Publisher: Elsevier BV

    DOI: 10.1016/j.scriptamat.2022.114513  

    ISSN: 1359-6462

  8. Dynamics at crystal/melt interface during solidification of multicrystalline silicon Peer-reviewed

    Kozo Fujiwara, Lu-Chung Chuang, Kensaku Maeda

    HIGH TEMPERATURE MATERIALS AND PROCESSES 41 (1) 31-47 2022/02

    DOI: 10.1515/htmp-2022-0020  

    ISSN: 0334-6455

    eISSN: 2191-0324

  9. Twin boundary formation at a grain-boundary groove during the directional solidification of InSb International-journal Peer-reviewed

    Keiji Shiga, Atsuko Takahashi, Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    JOURNAL OF CRYSTAL GROWTH 577 126403-126403 2022/01

    DOI: 10.1016/j.jcrysgro.2021.126403  

    ISSN: 0022-0248

    eISSN: 1873-5002

  10. Dendritic Growth in Si1-xGex Melts International-coauthorship Peer-reviewed

    Genki Takakura, Mukannan Arivanandhan, Kensaku Maeda, Lu-Chung Chuang, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    CRYSTALS 11 (7) 761-761 2021/07

    DOI: 10.3390/cryst11070761  

    ISSN: 2073-4352

    eISSN: 2073-4352

  11. Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon Peer-reviewed

    Chuang, L.-C., Kiguchi, T., Kodama, Y., Maeda, K., Shiga, K., Morito, H., Fujiwara, K.

    Scripta Materialia 172 105-109 2019

    DOI: 10.1016/j.scriptamat.2019.07.018  

    ISSN: 1359-6462

  12. A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification Peer-reviewed

    Chuang, L.-C., Maeda, K., Shiga, K., Morito, H., Fujiwara, K.

    Scripta Materialia 167 46-50 2019

    DOI: 10.1016/j.scriptamat.2019.03.037  

    ISSN: 1359-6462

  13. Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon International-journal International-coauthorship Peer-reviewed

    Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Miller, W., Fujiwara, K.

    Materialia 7 2019

    DOI: 10.1016/j.mtla.2019.100357  

    ISSN: 2589-1529

  14. Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon Peer-reviewed

    Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Fujiwara, K.

    Materialia 3 347-352 2018

    DOI: 10.1016/j.mtla.2018.08.034  

    ISSN: 2589-1529

  15. In situ observation of interaction between grain boundaries during directional solidification of Si International-coauthorship Peer-reviewed

    Chuang, L.-C., Maeda, K., Morito, H., Shiga, K., Miller, W., Fujiwara, K.

    Scripta Materialia 148 37-41 2018

    DOI: 10.1016/j.scriptamat.2018.01.020  

    ISSN: 1359-6462

  16. Alternative hybrid electrolytes based on a series of bis(trialkoxysilyl)alkanes and 3-(trihydroxysilyl)-1-propane sulfonic acid applied in gas diffusion electrodes of proton exchange membrane fuel cells Peer-reviewed

    C.W. Lin, L.C. Chung, R.S. Veerapur, F.C. Yang

    Journal of Power Sources 196 (3) 1069-1077 2011/02

    Publisher: Elsevier BV

    DOI: 10.1016/j.jpowsour.2010.08.024  

    ISSN: 0378-7753

  17. Proton-conducting membranes with high selectivity from cross-linked poly(vinyl alcohol) and poly(vinyl pyrrolidone) for direct methanol fuel cell applications Peer-reviewed

    Y.F. Huang, L.C. Chuang, A.M. Kannan, C.W. Lin

    Journal of Power Sources 186 (1) 22-28 2009/01

    Publisher: Elsevier BV

    DOI: 10.1016/j.jpowsour.2008.09.072  

    ISSN: 0378-7753

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Presentations 29

  1. Twin nucleation at symmetric Σ9 grain boundaries during directional solidification of Si

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    JCCG-53 2024/11/18

  2. Growth behavior of small-angle grain boundaries during directional solidification of Si International-presentation Invited

    Lu-Chung Chuang, Kozo Fujiwara

    SMTBEA-2024 2024/07/02

  3. Growth behavior of grain boundaries during directional solidification of Si Invited

    Lu-Chung Chuang, Kozo Fujiwara

    Internal seminar at IM2NP, CNRS 2024/04/11

  4. In situ observation of interfacial grooves of Σ9 grain boundaries during directional solidification of Si

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    JCCG-52 2023/12/05

  5. Dynamics of small-angle grain boundaries and lattice dislocations during directional solidification of multi-crystalline silicon Invited

    Lu-Chung Chuang, Kozo Fujiwara

    International Workshop on Energy Materials and Modelingfor Future Technology (EMMFT-2023) 2023/11/27

  6. Groove formation of Σ9 grain boundaries at solid/melt interface of Si

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    2023/09/22

  7. In situ observation of growth behavior of small-angle grain boundaries in multicrystalline silicon during directional solidification Invited

    Lu-Chung Chuang, Kozo Fujiwara

    23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) 2023/08/16

  8. Growth dynamics of lattice dislocations and small-angle grain boundaries in multicrystalline silicon during directional solidification International-presentation

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    20th International Conference on Crystal Growth and Epitaxy (ICCGE-20) 2023/07/31

  9. Dislocation generation from small-angle grain boundaries during directional solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    The 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33) 2022/11/16

  10. In-situ observation of solidification and subsequent evolution of Ni-Si eutectics

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    JCCG-51 2022/10/31

  11. Small-angle grain boundaries as sources of generation and absorption of dislocations during directional solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara

    2022/09/23

  12. Decomposition of small-angle grain boundaries during directional solidification of multicrystalline silicon International-presentation Invited

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    11th International Workshop on Crystalline Silicon for Solar Cells & 4th Silicon Materials Workshop (CSSC11 & SiMat4) 2022/04/21

  13. Small-angle grain boundaries as sinks for lattice dislocations during directional solidification of silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    JCCG-50 2021/10/29

  14. Interactions of small-angle grain boundaries with lattice dislocations during solidification of silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

    2021/09/15

  15. In-situ observation of eutectic growth of binary Ni-Si alloy

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    2021/03/19

  16. Formation and growth behavior of small-angle grain boundaries during directional solidification of multicrystalline silicon International-presentation

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    The 8th Asian Conference on Crystal Growthand Crystal Technology (CGCT-8) 2021/03/01

  17. In-situ observation of crystal-melt interface of Ni-Si binary system

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    JCCG-49 2020/11/11

  18. In-situ observation of solidification of binary Ni-Si melt

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    2020/09/18

  19. Splitting of small-angle grain boundaries during directional solidification of silicon

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    2020/03/19

  20. Unsteady growth of grain boundary groove during solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    JCCG-48 2019/10/30

  21. On the growth behavior of the grooves at grain/grain/melt triple phase boundary during solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

    2019/09/12

  22. Grain boundary evolutions and interactions at the crystal/melt interface of silicon during directional solidification International-presentation International-coauthorship

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Wolfram Miller, Kozo Fujiwara

    19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) 2019/07/30

  23. In situ observation of interaction between grain boundaries during directional solidification of Si International-presentation International-coauthorship Invited

    Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Wolfram Miller, Kozo Fujiwara

    3rd German Polish Conference on Crystal Growth (GPCCG-3), Poznan, Poland 2019/03/20

  24. Influence of grain boundary dislocations on the direction of a small-angle grain boundary in multicrystalline silicon during directional solidification International-presentation Invited

    Lu-Chung Chuang, Takanori Kiguchi, Yumiko Kodama, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    International Symposium & School on Crystal Growth Fundamentals (ISSCGF2018) 2018/11/05

  25. Initiation and development of small-angle grain boundaries during directional solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Takanori Kiguchi, Yumiko Kodama, Kozo Fujiwara

    JCCG-47 2018/11/02

  26. Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    2018/09/20

  27. Interaction between grain boundaries at the crystal/melt interface of mc-Si International-presentation Invited

    Lu-Chung Chuang

    Colloquium at Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany 2018/06/20

  28. Interactions between small-angle grain boundaries and Σ3 twin boundaries during solidification of multi-crystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    2018/03/21

  29. Interactions between grain boundaries during solidification of multicrystalline silicon

    Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

    JCCG-46 2017/11/29

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Industrial Property Rights 1

  1. 結晶の育成装置およびその保温カバー

    荘履中, 游智傑, 藍文杰, 錢俊逸, 李依晴, 徐文慶

    特許6085325

    Property Type: Patent

    Holder: 環球晶圓股ふん有限公司

Research Projects 1

  1. Investigation of growth dynamics of faceted grain/grain/melt grain boundary junction during directional solidification of Si

    CHUANG LUCHUNG

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業 研究活動スタート支援

    Category: 研究活動スタート支援

    Institution: 東北大学

    2021/08 - 2023/03

    More details Close

    This project started last October. I have achieved two advances for performing experiments in this study. One is the development of the technique for cutting oriented crystal seeds accurately. The oriented seeds are used to create coincidence site lattice grain boundaries (CSL GBs) with accuracies of better than 1 degree. The other advance is the modification of current crystal growth furnace. The thermocouples with higher operating temperature have been installed on the furnace. The temperature control loop has been re-designed and improved. Both the temperature gradient and the cooling rate of the crystallization process can now be controlled with high precision. These two advances pave the way for following in-situ experiments. The Si seeds for generating Σ9 GBs are prepared. Preliminary tests showed that the Si seeds can be partly melted without loss of the initial crystallinity and the solid/melt interface are able to move steadily due to the improved controllability of the modified furnace. The in-situ experiments for Σ9 GBs are just beginning and data collection is continuing. Before the seeds were prepared successfully with satisfying accuracy, I tested the ability of the modified furnace with bulk Si and Ni-Si alloy. This process generated interesting observations, and I have published these results.