Improving reliability of IGBT surface electrode for 200 °c operation

Nishimura, Tomohiro, Ikeda, Yoshinari, Hokazono, Hiroaki, Mochizuki, Eiji, Takahashi, Yoshikazu

2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014　2870-2873　2014年

DOI： 10.1109/IPEC.2014.6870088 　

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka

Materials Science in Semiconductor Processing　16　(3)　923-927　2013年6月

DOI： 10.1016/j.mssp.2013.01.020 　

ISSN： 1369-8001

Direct liquid cooling module with high reliability solder joining technology for automotive applications

Akira Morozumi, Hiroaki Hokazono, Yoshitaka Nishimura, Yoshinari Ikeda, Yoichi Nabetani, Yoshikazu Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　109-112　2013年

DOI： 10.1109/ISPSD.2013.6694408 　

ISSN： 1063-6854

Full SiC power module with advanced structure and its solar inverter application

Yuichiro Hinata, Masafumi Horio, Yoshinari Ikeda, Ryuji Yamada, Yoshikazu Takahashi

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC　604-607　2013年

DOI： 10.1109/APEC.2013.6520272 　

ISSN： 1048-2334

Comparison of SAB methods for room temperature bonding of Si wafers

Keigo Oshikawa, Chenxi Wang, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakawaza, Yoshikazu Takahashi

Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012　113　2012年

DOI： 10.1109/LTB-3D.2012.6238066 　

1700V reverse-blocking IGBTs with V-groove isolation layer for multi-level power converters

David H. Lu, Masaaki Ogino, Tohru Shirakawa, Haruo Nakazawa, Yoshikazu Takahashi

PCIM Europe Conference Proceedings　815-821　2012年

ISSN： 2191-3358

eISSN： 2191-3358

Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability

Masafumi Horio, Yuji Iizuka, Yoshinari Ikeda, Eiji Mochizuki, Yoshikazu Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　81-84　2012年

DOI： 10.1109/ISPSD.2012.6229028 　

ISSN： 1063-6854

Latest power devices for photovoltaic inverters

T. Fujihira, A. Otsuki, Y. Takahashi, T. Ide, M. Kawano, N. Eguchi

IEEE International Symposium on Industrial Electronics　1791-1794　2012年

DOI： 10.1109/ISIE.2012.6237363 　

Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs

Haruo Nakazawa, Masaaki Ogino, Hiroki Wakimoto, Tsunehiro Nakajima, Yoshikazu Takahashi, David Hongfei Lu

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　116-119　2011年

DOI： 10.1109/ISPSD.2011.5890804 　

ISSN： 1063-6854

Nanocomposite epoxy resin for SiC module

Kenji Okamoto, Yuji Takematsu, Miyako Hitomi, Yoshinari Ikeda, Yoshikazu Takahashi

Proceedings - 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011　196-200　2011年

Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength

A. Shorten, A. A. Fomani, W. T. Ng, H. Nishio, Y. Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　364-367　2011年

DOI： 10.1109/ISPSD.2011.5890866 　

ISSN： 1063-6854

Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky barrier diodes

Yoshinari Ikeda, Norihiro Nashida, Masafumi Horio, Hiromu Takubo, Yoshikazu Takahashi

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC　1298-1300　2011年

DOI： 10.1109/APEC.2011.5744760 　

ISSN： 1048-2334

Investigation on wirebond-less power module structure with high-density packaging and high reliability

Yoshinari Ikeda, Yuji Iizuka, Yuichiro Hinata, Masafumi Horio, Motohito Hori, Yoshikazu Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　272-275　2011年

DOI： 10.1109/ISPSD.2011.5890843 　

ISSN： 1063-6854

New IGBT modules for advanced neutral-point-clamped 3-level power converters

K. Komatsu, M. Yatsu, S. Miyashita, S. Okita, H. Nakazawa, S. Igarashi, Y. Takahashi, Y. Okuma, Y. Seki, T. Fujihira

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010　523-527　2010年

DOI： 10.1109/IPEC.2010.5543275 　

A study of the bonding-wire reliability on the chip surface electrode in IGBT

Yoshinari Ikeda, Hiroaki Hokazono, Shigeru Sakai, Tomohiro Nishimura, Yoshikazu Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　289-292　2010年

ISSN： 1063-6854

Macro-trend and a future expectation of innovations in power electronics and power devices

H. Shigekane, T. Fujihira, K. Sasagawa, Y. Seki, Y. Takahashi, A. Takai

2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09　35-39　2009年

DOI： 10.1109/IPEMC.2009.5292052 　

A study on the reliability of the chip surface solder joint

Yoshinari Ikeda, Yuji Iizuka, Tatsuhiko Asai, Tomoaki Goto, Yoshikazu Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　189-192　2008年

DOI： 10.1109/ISPSD.2008.4538930 　

ISSN： 1063-6854

Investigations of all lead free IGBT module structure with low thermal resistance and high reliability

Y. Nishimura, A. Morozumi, E. Mochizuki, Y. Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　2006　2006年

ISSN： 1063-6854

All lead free IGBT module with excellent reliability

Y. Nishimura, K. Oonishi, A. Morozumi, E. Mochizuki, Y. Takahashi

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　79-82　2005年

ISSN： 1063-6854

Development of high power press-pack IGBT and its applications

Uchida, Yoshiyuki, Seki, Yasukazu, Seki, Yasukazu, Takahashi, Yoshikazu, Takahashi, Yoshikazu, Ichijoh, Masami, Ichijoh, Masami

2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings　1　2000年

Development of high power press-pack IGBT and its applications

Yoshiyuki Uchida, Yasukazu Seki, Yoshikazu Takahashi, Masami Ichijoh

2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings　1　125-129　2000年

DOI： 10.1109/ICMEL.2000.840538 　

4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

T. Fujii, K. Yoshikawa, T. Koga, A. Nishiura, Y. Takahashi, H. Kakiki, M. Ichijyou, Y. Seki

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)　33-36　2000年

Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure

Takeharu Koga, Kazuaki Yamazaki, Hiroki Wakimoto, Yoshikazu Takahashi, Humiaki Kirihata, Yasukazu Seki

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)　437-440　1998年

Study on voltage oscillation phenomenon in high power P-i-N diode

Michio Nemoto, Yoshikazu Takahashi, Takeshi Fujii, Noriyuki Iwamuro, Yasukazu Seki

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)　305-308　1998年

Advanced power pack IGBT: 2.5 kV/1.8 kA RC-IGBT with highly reliable and ruggedness flat package

Yasukazu Seki, Yoshikazu Takahashi, Takeharu Koga, Humiaki Kirihata

IEE Conference Publication　(456)　258-262　1998年

DOI： 10.1049/cp:19980534 　

ISSN： 0537-9989

Investigation of flat-pack IGBT reliability

Humiaki Kirihata, Yoshikazu Takahashi, Hiroki Wakimoto, Fumisato Niino

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)　2　1016-1021　1998年

ISSN： 0197-2618

Ultra high-power 2.5 kV-1800 A Power Pack IGBT

Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Tetsumi Takano, Humiaki Kirihata, Yasukazu Seki

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)　233-236　1997年

2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)

Yoshikazu Takahashi, Koh Yoshikawa, Masayuki Soutome, Takeshi Fujii, Masami Ichijyou, Yasukazu Seki

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)　299-302　1996年

Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs

Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Yasukazu Seki

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)　70-74　1995年

2.5kV 100A μ-stack IGBT

Takahashi, Yoshikazu, Koga, Takeharu, Kirihata, Humiaki, Seki, Yasukazu

IEEE International Symposium on Power Semiconductor Devices & ICs　25-30　1994年

Formation of high quality epitaxial layer for an improved GTO

M. Watanabe, Y. Takahashi, O. Yamada, S. Tagami, H. Kirihata

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　1992-May　98-103　1992年

DOI： 10.1109/ISPSD.1992.991244 　

ISSN： 1063-6854

High frequency reverse conducting GTO thyristor

O. Yamada, M. Watanabe, H. Kakigi, T. Koga, Y. Takahashi, H. Kirihata

256-261　1990年

Gate drive circuits for high voltage, large current GTO-thyristors connected in series

Hideo Saotome, Yoshikazu Takahashi

PESC Record - IEEE Annual Power Electronics Specialists Conference　2　763-768　1990年

ISSN： 0275-9306

4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.

Osamu Hashimoto, Yoshikazu Takahashi, Humiaki Kirihata, Masahide Watanabe, Osamu Yamada

PESC Record - IEEE Annual Power Electronics Specialists Conference　915-921　1988年

ISSN： 0275-9306

115 mm φ 6 kV 2500 A light triggered thyristor.

Osamu Hashimoto, Masahide Watanabe, Katsuhiro Endo, Yoshikazu Takahashi, Hideaki Kakigi

PESC Record - IEEE Annual Power Electronics Specialists Conference　928-933　1988年

ISSN： 0275-9306

2. 5 KV-2000 A MONOLITHIC REVERSE CONDUCTING GATE TURN-OFF THYRISTOR.

Osamu Hashimoto, Yoshikazu Takahashi, Masahide Watanabe, Osamu Yamada, Tatsuhiko Fujihira

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)　388-392　1986年

ISSN： 0197-2618