-
Power Electronics Technology that Contributes to a Carbon-neutral Society
高橋良和, 加藤修治, 遠藤哲郎, 高橋良和, 加藤修治, 遠藤哲郎
まぐね 17 (3) 2022
ISSN：
1880-7208
-
Behavior of Star-Light Converters at AC Grid Voltage-drop which overcome week points of MMCs for BTBs and its potential for other applications
加藤修治, 高橋良和, 遠藤哲郎, 遠藤哲郎
電気学会電力・エネルギー部門大会論文集(CD-ROM) 2018 2018
-
Direct bonding of SiC by the suface activated bonding method
Tadatomo Suga, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi
2014 International Conference on Electronics Packaging, ICEP 2014 341-344 2014
DOI：
10.1109/ICEP.2014.6826707
-
Next-gen IGBT module structure for hybrid vehicle with high cooling performance and high temperature operation
Hiromichi Gohara, Yoshitaka Nishimura, Akira Morozumi, Peter Dietrich, Eiji Mochi Zuki, Yoshikazu Takahashi
PCIM Europe Conference Proceedings 1187-1194 2014
ISSN：
2191-3358
eISSN：
2191-3358
-
SiC wafer bonding by modified suface activated bonding method
Fengwen Mu, Tadatomo Suga, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi
Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 55 2014
DOI：
10.1109/LTB-3D.2014.6886194
-
Improving reliability of IGBT surface electrode for 200 °c operation
Tomohiro Nishimura, Yoshinari Ikeda, Hiroaki Hokazono, Eiji Mochizuki, Yoshikazu Takahashi
2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 2870-2873 2014
DOI：
10.1109/IPEC.2014.6870088
-
Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod
Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka
Materials Science in Semiconductor Processing 16 (3) 923-927 2013/06
DOI：
10.1016/j.mssp.2013.01.020
ISSN：
1369-8001
-
Direct liquid cooling module with high reliability solder joining technology for automotive applications
Akira Morozumi, Hiroaki Hokazono, Yoshitaka Nishimura, Yoshinari Ikeda, Yoichi Nabetani, Yoshikazu Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 109-112 2013
DOI：
10.1109/ISPSD.2013.6694408
ISSN：
1063-6854
-
Full SiC power module with advanced structure and its solar inverter application
Yuichiro Hinata, Masafumi Horio, Yoshinari Ikeda, Ryuji Yamada, Yoshikazu Takahashi
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC 604-607 2013
DOI：
10.1109/APEC.2013.6520272
ISSN：
1048-2334
-
Comparison of SAB methods for room temperature bonding of Si wafers
Keigo Oshikawa, Chenxi Wang, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakawaza, Yoshikazu Takahashi
Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 113 2012
DOI：
10.1109/LTB-3D.2012.6238066
-
1700V reverse-blocking IGBTs with V-groove isolation layer for multi-level power converters
David H. Lu, Masaaki Ogino, Tohru Shirakawa, Haruo Nakazawa, Yoshikazu Takahashi
PCIM Europe Conference Proceedings 815-821 2012
ISSN：
2191-3358
eISSN：
2191-3358
-
Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability
Masafumi Horio, Yuji Iizuka, Yoshinari Ikeda, Eiji Mochizuki, Yoshikazu Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 81-84 2012
DOI：
10.1109/ISPSD.2012.6229028
ISSN：
1063-6854
-
Latest power devices for photovoltaic inverters
T. Fujihira, A. Otsuki, Y. Takahashi, T. Ide, M. Kawano, N. Eguchi
IEEE International Symposium on Industrial Electronics 1791-1794 2012
Publisher:
IEEE
DOI：
10.1109/ISIE.2012.6237363
-
Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs
Haruo Nakazawa, Masaaki Ogino, Hiroki Wakimoto, Tsunehiro Nakajima, Yoshikazu Takahashi, David Hongfei Lu
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 116-119 2011
DOI：
10.1109/ISPSD.2011.5890804
ISSN：
1063-6854
-
Nanocomposite epoxy resin for SiC module
Kenji Okamoto, Yuji Takematsu, Miyako Hitomi, Yoshinari Ikeda, Yoshikazu Takahashi
Proceedings - 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011 196-200 2011
-
Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength
A. Shorten, A. A. Fomani, W. T. Ng, H. Nishio, Y. Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 364-367 2011
DOI：
10.1109/ISPSD.2011.5890866
ISSN：
1063-6854
-
Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky barrier diodes
Yoshinari Ikeda, Norihiro Nashida, Masafumi Horio, Hiromu Takubo, Yoshikazu Takahashi
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC 1298-1300 2011
DOI：
10.1109/APEC.2011.5744760
ISSN：
1048-2334
-
Investigation on wirebond-less power module structure with high-density packaging and high reliability
Yoshinari Ikeda, Yuji Iizuka, Yuichiro Hinata, Masafumi Horio, Motohito Hori, Yoshikazu Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 272-275 2011
DOI：
10.1109/ISPSD.2011.5890843
ISSN：
1063-6854
-
New IGBT modules for advanced neutral-point-clamped 3-level power converters
K. Komatsu, M. Yatsu, S. Miyashita, S. Okita, H. Nakazawa, S. Igarashi, Y. Takahashi, Y. Okuma, Y. Seki, T. Fujihira
2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010 523-527 2010
DOI：
10.1109/IPEC.2010.5543275
-
A study of the bonding-wire reliability on the chip surface electrode in IGBT
Yoshinari Ikeda, Hiroaki Hokazono, Shigeru Sakai, Tomohiro Nishimura, Yoshikazu Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 289-292 2010
ISSN：
1063-6854
-
Macro-trend and a future expectation of innovations in power electronics and power devices
H. Shigekane, T. Fujihira, K. Sasagawa, Y. Seki, Y. Takahashi, A. Takai
2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09 35-39 2009
DOI：
10.1109/IPEMC.2009.5292052
-
A study on the reliability of the chip surface solder joint
Yoshinari Ikeda, Yuji Iizuka, Tatsuhiko Asai, Tomoaki Goto, Yoshikazu Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 189-192 2008
DOI：
10.1109/ISPSD.2008.4538930
ISSN：
1063-6854
-
Investigations of all lead free IGBT module structure with low thermal resistance and high reliability
Y. Nishimura, A. Morozumi, E. Mochizuki, Y. Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2006 2006
ISSN：
1063-6854
-
All lead free IGBT module with excellent reliability
Y. Nishimura, K. Oonishi, A. Morozumi, E. Mochizuki, Y. Takahashi
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 79-82 2005
ISSN：
1063-6854
-
1792 channel DC tester for FCBGA package evaluation
TAKAHASHI Yoshikazu
Technical report of IEICE. ICD 103 (647) 69-71 2004/01/29
Publisher:
The Institute of Electronics, Information and Communication Engineers
ISSN：
0913-5685
-
Comb-actuator resonant measurement method using the 2nd harmonics of the GND current
TAKAHASHI Yoshikazu
2000 (11) 109-112 2000/12/19
-
Development of high power press-pack IGBT and its applications
Uchida, Yoshiyuki, Seki, Yasukazu, Seki, Yasukazu, Takahashi, Yoshikazu, Takahashi, Yoshikazu, Ichijoh, Masami, Ichijoh, Masami
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings 1 2000
-
Development of high power press-pack IGBT and its applications
Yoshiyuki Uchida, Yasukazu Seki, Yoshikazu Takahashi, Masami Ichijoh
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings 1 125-129 2000
DOI：
10.1109/ICMEL.2000.840538
-
4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)
T. Fujii, K. Yoshikawa, T. Koga, A. Nishiura, Y. Takahashi, H. Kakiki, M. Ichijyou, Y. Seki
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 33-36 2000
-
Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure
Takeharu Koga, Kazuaki Yamazaki, Hiroki Wakimoto, Yoshikazu Takahashi, Humiaki Kirihata, Yasukazu Seki
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD) 437-440 1998
-
Study on voltage oscillation phenomenon in high power P-i-N diode
Michio Nemoto, Yoshikazu Takahashi, Takeshi Fujii, Noriyuki Iwamuro, Yasukazu Seki
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD) 305-308 1998
-
Advanced power pack IGBT: 2.5 kV/1.8 kA RC-IGBT with highly reliable and ruggedness flat package
Yasukazu Seki, Yoshikazu Takahashi, Takeharu Koga, Humiaki Kirihata
IEE Conference Publication (456) 258-262 1998
DOI：
10.1049/cp:19980534
ISSN：
0537-9989
-
Investigation of flat-pack IGBT reliability
Humiaki Kirihata, Yoshikazu Takahashi, Hiroki Wakimoto, Fumisato Niino
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society) 2 1016-1021 1998
ISSN：
0197-2618
-
Ultra high-power 2.5 kV-1800 A Power Pack IGBT
Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Tetsumi Takano, Humiaki Kirihata, Yasukazu Seki
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD) 233-236 1997
-
2.5 kV-1000 A Power Pack IGBT (High power flat-packaged RC-IGBT)
Yoshikazu Takahashi, Koh Yoshikawa, Masayuki Soutome, Takeshi Fujii, Masami Ichijyou, Yasukazu Seki
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD) 299-302 1996
-
Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs
Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Yasukazu Seki
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD) 70-74 1995
-
2.5kV 100A μ-stack IGBT
Yoshikazu Takahashi, Takeharu Koga, Humiaki Kirihata, Yasukazu Seki
IEEE International Symposium on Power Semiconductor Devices & ICs 25-30 1994
-
Development of a High-Current Superconductor
Takahashi Yoshikazu
Journal of plasma and fusion research 69 (6) p610-614 1993/06
Publisher:
プラズマ・核融合学会
ISSN：
0918-7928
-
Formation of high quality epitaxial layer for an improved GTO
M. Watanabe, Y. Takahashi, O. Yamada, S. Tagami, H. Kirihata
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 1992-May 98-103 1992
DOI：
10.1109/ISPSD.1992.991244
ISSN：
1063-6854
-
High frequency reverse conducting GTO thyristor
O. Yamada, M. Watanabe, H. Kakigi, T. Koga, Y. Takahashi, H. Kirihata
256-261 1990
-
Gate drive circuits for high voltage, large current GTO-thyristors connected in series
Hideo Saotome, Yoshikazu Takahashi
PESC Record - IEEE Annual Power Electronics Specialists Conference 2 763-768 1990
ISSN：
0275-9306
-
4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.
Osamu Hashimoto, Yoshikazu Takahashi, Humiaki Kirihata, Masahide Watanabe, Osamu Yamada
PESC Record - IEEE Annual Power Electronics Specialists Conference 915-921 1988
ISSN：
0275-9306
-
115 mm φ 6 kV 2500 A light triggered thyristor.
Osamu Hashimoto, Masahide Watanabe, Katsuhiro Endo, Yoshikazu Takahashi, Hideaki Kakigi
PESC Record - IEEE Annual Power Electronics Specialists Conference 928-933 1988
ISSN：
0275-9306
-
2. 5 KV-2000 A MONOLITHIC REVERSE CONDUCTING GATE TURN-OFF THYRISTOR.
Osamu Hashimoto, Yoshikazu Takahashi, Masahide Watanabe, Osamu Yamada, Tatsuhiko Fujihira
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society) 388-392 1986
ISSN：
0197-2618
