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Masao Sakuraba

Section

Research Institute of Electrical Communication

Job title

Associate Professor

Degree

博士（工学）（東北大学）

researchmap

https://researchmap.jp/Masao_Sakuraba

J-GLOBAL ID

200901036470194904

Researcher ID

H-7504-2014

Profile

Ph.D. Researcher on materials science. Thinker for peace on the Earth based on empathetic intelligence.

- List of Research Achievements: https://www5a.biglobe.ne.jp/~tenrou/PresenList_MS.pdf

On the following sites, I am posting my views as an individual scientist who strives to be honest with the general public.
(The contents of these posts are in no way related to my affiliated institution.)

- Personal Web: https://www5a.biglobe.ne.jp/~tenrou/

- Facebook: https://www.facebook.com/skrbmso

- X: https://x.com/Masao_Sakuraba

- Bluesky: https://bsky.app/profile/masao-sakuraba.bsky.social

Research History 14

2023/04 - Present

Tohoku University　Research Institute of Electrical Communication (Group IV Quantum Heterointegration, Nano-Integration Devices and Systems, Laboratory for Nanoelectronics and Spintronics)　Associate Professor
2012/04 - 2023/03

Tohoku University　Research Institute of Electrical Communication (Group IV Quantum Heterointegration, Nano-Integration Devices and Process, Laboratory for Nanoelectronics and Spintronics)　Associate Professor
2007/04 - 2012/03

Tohoku University　Research Institute of Electrical Communication (Group IV Quantum Heterointegration, Atomically Controlled Processing, Laboratory for Nanoelectronics and Spintronics)　Associate Professor
2004/04 - 2007/03

Tohoku University　Research Institute of Electrical Communication (Atomically Controlled Processing, Laboratory for Nanoelectronics and Spintronics)　Associate Professor
2002/08 - 2004/03

Tohoku University　Research Institute of Electrical Communication (Atomically Controlled Processing, Laboratory for Electronic Intelligent Systems)　Associate Professor
1995/04 - 2002/07

Tohoku University　Research Institute of Electrical Communication (Atomically Controlled Processing, Laboratory for Electronic Intelligent Systems)　Research Associate
2022/04 - Present

Tohoku University　Research Organization of Electrical Communication　Concurrent Researcher
2002/08 - Present

Tohoku University　Graduate School of Engineering Electrical,Information and Physics Engineering　Concurrent Faculty Member
2002/08 - Present

Tohoku University　Faculty of Engineering Department of Electrical,Information and Physics Engineering　Concurrent Faculty Member
2020 - 2022

Iwate University　Faculty of Science and Engineering　Part-time Lecturer (October to December)
2020/10 - 2021/03

Sendai National College of Technology　Part-time Lecturer (Hirose Campus)
2016 - 2019

Sendai National College of Technology　Part-time Lecturer (1st half-year, Hirose Campus)
2010 - 2013

Sendai National College of Technology　Part-time Lecturer (1st half-year, Hirose Campus)
2005 - 2009

Sendai National College of Technology　Part-time Lecturer (1st half-year)

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Education 3

Tohoku University　Graduate School of Engineering　Doctor of Engineering, Department of Electrical and Communications Engineering

1992/04 - 1995/03
Tohoku University　Graduate School of Engineering　Master of Engineering, Department of Electrical and Communications Engineering

1990/04 - 1992/03
Tohoku University　School of Engineering　Bachelor of Engineering, Department of Electrical Engineering

1986/04 - 1990/03

Committee Memberships 15

The Japan Section of The Electrochemical Society (ECS)　Member-at-Large

2023/01 - Present
International WorkShop on New Group IV Semiconductor Nanoelectronics　Chair, Organizing Committee

2018/02 - Present
Japan Society of Applied Physics　General Member, ULSI Device Research Committee, Silicon Technology Division

2014/03 - Present
International WorkShop on New Group IV Semiconductor Nanoelectronics　General Member, Organizing Committee

2005/04 - 2017/02
The Japan Society of Applied Physics　General Member, Paper Award Committee

2013/04 - 2015/03
Japan Society of Applied Physics　General Member, The Editorial Committee of the Japanese Journal "Oyo Butsuri"

2010/04 - 2012/03
Institute of Electrical Engineers of Japan　Assistant Secretary, Research Committee of New Group-IV Atomically-Controlled Devices, Materials and Technology

2008/02 - 2010/01
Tohoku Branch of the Japan Society of Applied Physics　General Affairs

2008/01 - 2009/12
Tohoku Branch of the Institute of Electrical Engineers of Japan　Council Member

2007/05 - 2009/05
Institute of Electrical Engineers of Japan　Assistant Secretary, Research Committee of Group-IV Heterostructure Ultrasmall Devices, Materials and Technology

2006/02 - 2008/01
Joint Convention of Tohoku Branch of Electrical Engineering Institutes　Treasurer

2005/05 - 2007/05
Tohoku Branch of The Institute of Electrical Engineers of Japan　Treasurer

2005/05 - 2007/05
Institute of Electrical Engineers of Japan　Assistant Secretary, Research Committee of Group-IV Heterostructure Devices, Systems and Technology

2004/02 - 2006/01
International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　General Member, Scientific Program Committee

2001/01 - 2004/10
Institute of Electrical Engineers of Japan　Assistant Secretary, Research Committee of Ultrafast SiGe Devices, Materials Technology

2002/02 - 2004/01

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Professional Memberships 2

The Electrochemical Society
The Japan Society of Apllied Physics

Research Interests 6

large-scale integration process
plasma chemical vapor deposition
epitaxial growth
group IV semiconductor
quantum effect device
Strained heterostructure

Research Areas 6

Nanotechnology/Materials / Nanostructure physics /
Natural sciences / Semiconductors, optical and atomic physics /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /
Nanotechnology/Materials / Thin-film surfaces and interfaces /
Nanotechnology/Materials / Crystal engineering /

Awards 3

Research Encouragement Award

2015/11　Minoru Ishida Foundation (Japan)　"Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors"
Research Encouragement Award

2002/03　Tokin Foundation for Advancement of Science and Technology (Japan)　"Quantum Heterostructure Formation of Group IV Semiconductors Using Atomically Controlled Deposition"
Young Researcher Award

1992/08　International Conference on Solid State Devices and Materials (SSDM)　“Atomic Layer Control of Germanium and Silicon on Silicon Using Flash Heating in Ultraclean Chemical Vapor Deposition”

Papers 218

SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure Peer-reviewed

Hiroyuki Nagasawa, Yasuo Cho, Maho Abe, Takenori Tanno, Michimasa Musya, Masao Sakuraba, Yusuke Sato, Shigeo Sato

Solid State Phenomena　362　(19)　33-40　2024/08/27
Publisher: Trans Tech Publications, Ltd.
DOI： 10.4028/p-3wy1yi 　

eISSN： 1662-9779

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The layer structure of 3C-SiC stacked on 4H-SiC is implemented by simultaneous lateral epitaxy (SLE). The SLE, involving spontaneous nucleation of 3C-SiC(111) on the 4H-SiC(0001) surface followed by step-controlled epitaxy, facilitates the creation of a single-domain 3C-SiC layer with an epitaxial relationship to the underlying 4H-SiC, establishing a coherent (111)//(0001) interface aligned in the basal plane. An extremely low state density at an interface between thermally grown SiO₂and SLE-grown 3C-SiC layer is revealed by local deep level transient spectroscopy (local-DLTS) based on scanning nonlinear dielectric microscopy (SNDM).
Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100) Peer-reviewed

Wu Li, Masao Sakuraba, Shigeo Sato

Materials Science in Semiconductor Processing　107　2020/03/01

DOI： 10.1016/j.mssp.2019.104823 　

ISSN： 1369-8001
Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation Peer-reviewed

Shogo Sasaki, Masao Sakuraba, Hisanao Akima, Shigeo Sato

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　70　188-192　2017/11

DOI： 10.1016/j.mssp.2016.10.046 　

ISSN： 1369-8001

eISSN： 1873-4081
Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating Peer-reviewed

Naofumi Ueno, Masao Sakuraba, Yoshihiro Osakabe, Hisanao Akima, Shigeo Sato

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　70　55-62　2017/11

DOI： 10.1016/j.mssp.2016.09.035 　

ISSN： 1369-8001

eISSN： 1873-4081
Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating Peer-reviewed

Koya Motegi, Naofumi Ueno, Masao Sakuraba, Yoshihiro Osakabe, Hisanao Akima, Shigeo Sato

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　70　50-54　2017/11

DOI： 10.1016/j.mssp.2016.10.030 　

ISSN： 1369-8001

eISSN： 1873-4081
Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics (eBook) Peer-reviewed

Chemical Vapor Deposition (CVD): Types, Uses and Selected Research, Chapter: 4, Publisher: Nova Science Publishers, Editors: Monica Powell, pp.61-115　61-115　2017/02
Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics (Book) Peer-reviewed

M. Sakuraba, H. Akima, S. Sato

Chemical Vapor Deposition (CVD): Types, Uses and Selected Research, Chapter: 4, Publisher: Nova Science Publishers, Editors: Monica Powell, pp.61-115　61-115　2017/02
Computational Efficiency of a Modular Reservoir Network for Image Recognition Peer-reviewed

Yifan Dai, Hideaki Yamamoto, Masao Sakuraba, Shigeo Sato

Frontiers in Computational Neuroscience　15　2021/02/05
Publisher: Frontiers Media SA
DOI： 10.3389/fncom.2021.594337 　

eISSN： 1662-5188

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Liquid state machine (LSM) is a type of recurrent spiking network with a strong relationship to neurophysiology and has achieved great success in time series processing. However, the computational cost of simulations and complex dynamics with time dependency limit the size and functionality of LSMs. This paper presents a large-scale bioinspired LSM with modular topology. We integrate the findings on the visual cortex that specifically designed input synapses can fit the activation of the real cortex and perform the Hough transform, a feature extraction algorithm used in digital image processing, without additional cost. We experimentally verify that such a combination can significantly improve the network functionality. The network performance is evaluated using the MNIST dataset where the image data are encoded into spiking series by Poisson coding. We show that the proposed structure can not only significantly reduce the computational complexity but also achieve higher performance compared to the structure of previous reported networks of a similar size. We also show that the proposed structure has better robustness against system damage than the small-world and random structures. We believe that the proposed computationally efficient method can greatly contribute to future applications of reservoir computing.
Learning rule for a quantum neural network inspired by Hebbian learning Peer-reviewed

Yoshihiro Osakabe, Shigeo Sato, Hisanao Akima, Mitsunaga Kinjo, Masao Sakuraba

IEICE Transactions on Information and Systems　E104D　(2)　237-245　2021/02/01

DOI： 10.1587/transinf.2020EDP7093 　

ISSN： 0916-8532

eISSN： 1745-1361
A spiking neuron MOS circuit for low-power neuromorphic computation Peer-reviewed

Shigeo Sato, Yuki Tamura, Satoshi Moriya, Tatsuki Kato, Masao Sakuraba, Yoshihiko Horio, Jordi Madrenas

Proceedings of International Symposium on Nonlinear Theory and Its Applications　80-80　2019/12
An Izhikevich model neuron MOS crcuit for low voltage operation Peer-reviewed

Yuki Tamura, Satoshi Moriya, Tatsuki Kato, Masao Sakuraba, Yoshihiko Horio, Shigeo Sato

Proceedings of 28th International Conference on Artificial Neural Networks　718-723　2019/09
IzhikevichニューロンモデルMOS回路の提案

田村祐樹, 守谷哲, 加藤達暉, 櫻庭政夫, 堀尾喜彦, 佐藤茂雄

電子情報通信学会技術報告　NC2018-60　93-93　2019/03
Amphiphobic Septa Enhance the Mechanical Stability of Free-Standing Bilayer Lipid Membranes Peer-reviewed

Daichi Yamaura, Daisuke Tadaki, Shun Araki, Miyu Yoshida, Kohei Arata, Takeshi Ohori, Ken-ichi Ishibashi, Miki Kato, Teng Ma, Ryusuke Miyata, Hideaki Yamamoto, Ryugo Tero, Masao Sakuraba, Toshio Ogino, Michio Niwano, Ayumi Hirano-Iwata

LANGMUIR　34　(19)　5615-5622　2018/05

DOI： 10.1021/acs.langmuir.8b00747 　

ISSN： 0743-7463
Quantum Associative Memory with Quantum Neural Network via Adiabatic Hamiltonian Evolution Peer-reviewed

Yoshihiro Osakabe, Hisanao Akima, Masao Sakuraba, Mitsunaga Kinjo, Shigeo Sato

IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS　E100D　(11)　2683-2689　2017/11

DOI： 10.1587/transinf.2017EDP7138 　

ISSN： 1745-1361
Neuro-inspired quantum associative memory using adiabatic hamiltonian evolution Peer-reviewed

Yoshihiro Osakabe, Shigeo Sato, Hisanao Akima, Masao Sakuraba, Mitsunaga Kinjo

Proceedings of the International Joint Conference on Neural Networks　2017-　803-807　2017/06/30
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/IJCNN.2017.7965934 　
Complexity reduction of neural network model for local motion detection in motion stereo vision Peer-reviewed

Hisanao Akima, Susumu Kawakami, Jordi Madrenas, Satoshi Moriya, Masafumi Yano, Koji Nakajima, Masao Sakuraba, Shige Sato

Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)　10639　830-839　2017
Publisher: Springer Verlag
DOI： 10.1007/978-3-319-70136-3_88 　

ISSN： 1611-3349 0302-9743
Carrier properties of B atomic-layer-doped Si films grown by ECR Ar-plasma-enhanced CVD without substrate heating Peer-reviewed

Masao Sakuraba, Katsutoshi Sugawara, Takayuki Nosaka, Hisanao Akima, Shigeo Sato

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS　18　(1)　294-306　2017

DOI： 10.1080/14686996.2017.1312520 　

ISSN： 1468-6996

eISSN： 1878-5514
CMOS Majority Circuit with Large Fan-In Peer-reviewed

Hisanao Akima, Yasuhiro Katayama, Masao Sakuraba, Koji Nakajima, Jordi Madrenas, Shigeo Sato

IEICE TRANSACTIONS ON ELECTRONICS　E99C　(9)　1056-1064　2016/09

DOI： 10.1587/transele.E99.C.1056 　

ISSN： 1745-1353
Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Quantum Heterointegration in Nanoelectronics (Invited Paper) Peer-reviewed

M. Sakuraba, H. Akima, S. Sato

Abstracts of the Energy Materials Nanotechnology (EMN) Meeting on Epitaxy, Budapest, Hungary, Sep. 4-8, 2016　2016/09

DOI： 10.13140/RG.2.2.27706.18889 　

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Abstract presented at the Energy Materials Nanotechnology (EMN) Meeting on Epitaxy, Budapest, Hungary, Sep. 4-8, 2016, No.A19, pp.61-63.
CMOS Majority Circuit with Large Fan-In Peer-reviewed

Hisanao Akima, Yasuhiro Katayama, Masao Sakuraba, Koji Nakajima, Jordi Madrenas, Shigeo Sato

IEICE TRANSACTIONS ON ELECTRONICS　E99C　(9)　1056-1064　2016/09

DOI： 10.1587/transele.E99.C.1056 　

ISSN： 1745-1353
Research and Development of Group IV Quantum Heterointegration Processing (Masao Sakuraba) (in English) Peer-reviewed

Masao Sakuraba

2016/06

DOI： 10.13140/RG.2.1.1667.0322 　
IV族半導体量子ヘテロ構造高集積化プロセスの研究開発（櫻庭政夫）（Research and Development of Group IV Quantum Heterointegration Processing (Masao Sakuraba) (in Japanese)） Peer-reviewed

Masao Sakuraba

2016/06

DOI： 10.13140/RG.2.1.3764.1844 　
C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition Peer-reviewed

Yuji Yamamoto, Naofumi Ueno, Masao Sakuraba, Junichi Murota, Andreas Mai, Bernd Tillack

THIN SOLID FILMS　602　24-28　2016/03

DOI： 10.1016/j.tsf.2015.09.046 　

ISSN： 0040-6090
Learning Method for a Quantum Bit Network Peer-reviewed

Yoshihiro Osakabe, Shigeo Sato, Mitsunaga Kinjo, Koji Nakajima, Hisanao Akima, Masao Sakuraba

ARTIFICIAL NEURAL NETWORKS AND MACHINE LEARNING - ICANN 2016, PT I　9886　558-559　2016

ISSN： 0302-9743
Effects of interfacial chemical states on the performance of perovskite solar cells Peer-reviewed

Teng Ma, Daisuke Tadaki, Masao Sakuraba, Shigeo Sato, Ayumi Hirano-Iwata, Michio Niwano

JOURNAL OF MATERIALS CHEMISTRY A　4　(12)　4392-4397　2016

DOI： 10.1039/c5ta08098c 　

ISSN： 2050-7488

eISSN： 2050-7496
An LSI Implementation of a Neural Network Model for Detecting Local Image Motion in the Visual Cortex

秋間学尚, 守谷哲, 川上進, 矢野雅文, 中島康治, 櫻庭政夫, 佐藤茂雄

IEICE Technical Report　115　(111)　57-62　2015/06/23
Publisher:
ISSN： 0913-5685

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ISSN 0913-5685, レポート番号 NC2015-4
Depth Profiling of Group-IV Semiconductor Materials by X-Ray Photoelectron Spectroscopy (in Japanese) Invited

M. Sakuraba, H. Akima, S. Sato, J. Murota

Proceedings of Surface Analysis Research Conversazione (SHIMADZU CORPORATION, Hadano, Japan, Jun. 18-19, 2015)　6-1-6-9　2015/06/18
Publisher: Shimadzu Corp.
DOI： 10.13140/RG.2.1.2125.3284 　

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We have described a case where the depth profile of composition distribution in group IV semiconductors was evaluated with sub-nanometer accuracy by utilizing the high surface sensitivity of XPS on the nanometer order. These results suggest the high potential of evaluation and analysis methods that make full use of XPS. The method of estimation from the escape angle dependence has the limitation that it cannot determine whether the same type of atoms are distributed in multiple depth regions by this method alone, but it is a non-destructive method that only involves XPS measurement, and has the advantage that the same sample can be analyzed by other evaluation methods and the results can be compared and verified. On the other hand, the combined method with surface layer etching has the advantage that the depth profile of composition can be obtained almost directly, although there are many issues with the etching method other than XPS measurement. In the future research and development of cutting-edge semiconductor devices, it is expected that the establishment of abrupt heterointerface formation and local high-concentration impurity doping control technology will be required, and the importance of evaluation using XPS in this context is expected to increase.
Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition Peer-reviewed

A. A. Shklyaev, V. I. Vdovin, V. A. Volodin, D. V. Gulyaev, A. S. Kozhukhov, M. Sakuraba, J. Murota

THIN SOLID FILMS　579　131-135　2015/03

DOI： 10.1016/j.tsf.2015.02.076 　

ISSN： 0040-6090
Superconductivity Coherence in Series Array of Nb/AlOx/Nb Josephson Junctions

Tohoku-Section Joint Convention Record of Institutes of Electrical and Information Engineers, Japan　2015　10-10　2015
Publisher: Organizing Committee of Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers, Japan
DOI： 10.11528/tsjc.2015.0_10 　
STMを用いた電子注入によるSi表面終端水素原子の脱離に関する研究

李武, 佐藤茂雄, 秋間学尚, 櫻庭政夫

電気関係学会東北支部連合大会講演論文集　2015　140-140　2015
Publisher: 電気関係学会東北支部連合大会実行委員会
DOI： 10.11528/tsjc.2015.0_140 　
Formation of stress free silicon nitride films by silane reaction and nitridation under ECR nitrogen plasma irradiation Peer-reviewed

M. Sakuraba, M. Saito, J. Murota

Abstracts of the 7th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7, November 16-20, 2003, Nara, Japan)　212-212　2015
Publisher: Unpublished
DOI： 10.13140/RG.2.1.3317.2641 　
Hydrogen atom desorption induced by electron bombardment on si surface Peer-reviewed

W. Li, S. Sato, H. Akima, M. Sakuraba

ECS Transactions　69　(31)　35-38　2015
Publisher: Electrochemical Society Inc.
DOI： 10.1149/06931.0035ecst 　

ISSN： 1938-6737 1938-5862
Izhikevich neuron circuit using stochastic logic Peer-reviewed

S. Sato, H. Akima, K. Nakajima, M. Sakuraba

ELECTRONICS LETTERS　50　(24)　1795-U157　2014/11

DOI： 10.1049/el.2014.3627 　

ISSN： 0013-5194

eISSN： 1350-911X
Epitaxial growth of Si-1 (-) Ge-x(x) alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating Peer-reviewed

Naofumi Ueno, Masao Sakuraba, Junichi Murota, Shigeo Sato

THIN SOLID FILMS　557　31-35　2014/04

DOI： 10.1016/j.tsf.2013.11.023 　

ISSN： 0040-6090
Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode Peer-reviewed

Tomoyuki Kawashima, Masao Sakuraba, Junichi Murota

THIN SOLID FILMS　557　302-306　2014/04

DOI： 10.1016/j.tsf.2013.08.124 　

ISSN： 0040-6090
Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4-B2H6-H-2 gas mixture without substrate heating Peer-reviewed

Yusuke Abe, Masao Sakuraba, Junichi Murota

THIN SOLID FILMS　557　10-13　2014/04

DOI： 10.1016/j.tsf.2013.08.118 　

ISSN： 0040-6090
ATOMICALLY CONTROLLED PROCESSING FOR NITROGEN DOPING OF GROUP IV SEMICONDUCTORS Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)　2014
Majority Neuron Circuit Having Large Fan-in with Non-volatile Synaptic Weight Peer-reviewed

Hisanao Akima, Yasuhiro Katayama, Koji Nakajima, Masao Sakuraba, Shigeo Sato

PROCEEDINGS OF THE 2014 INTERNATIONAL JOINT CONFERENCE ON NEURAL NETWORKS (IJCNN)　4266-4271　2014

ISSN： 2161-4393
Atomic-Order Thermal Nitridation of Si, Si1-xGex and Ge by NH3 Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING　61　(2)　97-104　2014

DOI： 10.1149/06102.0097ecst 　

ISSN： 1938-5862
Surface Reaction in Thin Film Formation of Si1-xGex Alloys on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating Peer-reviewed

Naofumi Ueno, Masao Sakuraba, Shigeo Sato

SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES　64　(6)　99-105　2014

DOI： 10.1149/06406.0099ecst 　

ISSN： 1938-5862
X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures Peer-reviewed

Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota

IEICE TRANSACTIONS ON ELECTRONICS　E96C　(5)　680-685　2013/05

DOI： 10.1587/transele.E96.C.680 　

ISSN： 0916-8524

eISSN： 1745-1353
Epitaxial growth of heavily B-doped Si and Ge films on Si(100) by low-energy ECR Ar plasma CVD without substrate heating Peer-reviewed

Yusuke Abe, Shuji Kubota, Masao Sakuraba, Junichi Murota, Shigeo Sato

ECS Transactions　58　(9)　223-228　2013
Publisher: Electrochemical Society Inc.
DOI： 10.1149/05809.0223ecst 　

ISSN： 1938-6737 1938-5862
Formation and Characterization of Strained Si1-xGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating Peer-reviewed

Naofumi Ueno, Masao Sakuraba, Junichi Murota, Shigeo Sato

ULSI PROCESS INTEGRATION 8　58　(9)　207-211　2013

DOI： 10.1149/05809.0207ecst 　

ISSN： 1938-5862
Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing Invited Peer-reviewed

Masao Sakuraba, Junichi Murota

ULSI PROCESS INTEGRATION 8　58　(9)　195-200　2013

DOI： 10.1149/05809.0195ecst 　

ISSN： 1938-5862
Atomically Controlled CVD Processing of Group IV Semiconductors for Strain Engineering and Doping in Ultralarge Scale Integration Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

2013 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 4)　54　(1)　55-64　2013

DOI： 10.1149/05401.0055ecst 　

ISSN： 1938-5862
Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

Advances in Natural Sciences: Nanoscience and Nanotechnology　3　(2)　023002 (4 pages)　2012/06

DOI： 10.1088/2043-6262/3/2/023002 　

ISSN： 2043-6262
Behavior of N atoms after thermal nitridation of Si1-xGex surface Peer-reviewed

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

THIN SOLID FILMS　520　(8)　3392-3396　2012/02

DOI： 10.1016/j.tsf.2011.10.108 　

ISSN： 0040-6090
Strain control of Si and Si1-yCy layers in Si/Si 1-yCy/Si(100) heterostructures Peer-reviewed

Tomohira Kikuchi, Masao Sakuraba, Ioan Costina, Bernd Tillack, Junichi Murota

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings　122-123　2012

DOI： 10.1109/ISTDM.2012.6222488 　
Atomically Controlled CVD Technology of Group IV Semiconductors for Ultra large Scale Integration Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)　293-296　2012

DOI： 10.1109/ICSICT.2012.6467700 　
Strain Control of Si and Si1-x-yGexCy Layers in Si/Si1-x-yGexCy/Si Heterostructures by Low-Pressure Chemical Vapor Deposition Invited Peer-reviewed

Junichi Murota, Tomohira Kikuchi, Jiro Hasegawa, Masao Sakuraba

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES　50　(9)　245-254　2012

DOI： 10.1149/05009.0245ecst 　

ISSN： 1938-5862
Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY　11　(9)　8348-8353　2011/09

DOI： 10.1166/jnn.2011.5052 　

ISSN： 1533-4880
Flat band shift for MIS with insulator gate fabricated by an electron cyclotron resonance sputter Peer-reviewed

Kohei Izumi, Hiroshi Toyota, Junichi Murota, Masao Sakuraba, Yukio Fukuda, Toshiro Ono

Proceedings of The 11th International Symposium on Sputtering and Plasma Processes　23-26　2011/07
Atomically Controlled CVD Processing for Doping in Future Si-Based Devices (Invited Paper) Invited Peer-reviewed

J. Murota, M. Sakuraba, B. Tillack

Proc. 2011 Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT) (Edited by Y. Kuo and G. Bersuker, The Electrochem. Soc., Pennington, NJ, 2011) : ECS Trans.　37　(1)　181-188　2011/06

DOI： 10.1149/1.3600738 　

ISSN： 1938-6737
Fabrication of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers Peer-reviewed

Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

SOLID-STATE ELECTRONICS　60　(1)　112-115　2011/06

DOI： 10.1016/j.sse.2011.01.040 　

ISSN： 0038-1101
Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors Peer-reviewed

Masao Sakuraba, Junichi Murota

ULSI PROCESS INTEGRATION 7　41　(7)　337-343　2011

DOI： 10.1149/1.3633314 　

ISSN： 1938-5862
Atomically Controlled Formation of Strained Si1-xGex/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode Peer-reviewed

Masao Sakuraba, Junichi Murota

ULSI PROCESS INTEGRATION 7　41　(7)　309-314　2011

DOI： 10.1149/1.3633311 　

ISSN： 1938-5862
Atomically Controlled CVD Processing for Doping in Future Si-Based Devices Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

2011 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT)　37　(1)　181-188　2011

DOI： 10.1149/1.3600738 　

ISSN： 1938-5862
Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs Peer-reviewed

Toshiaki Tsuchiya, Keiichi Yoshida, Masao Sakuraba, Junichi Murota

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　470　201-+　2011

DOI： 10.4028/www.scientific.net/KEM.470.201 　

ISSN： 1013-9826
Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation Peer-reviewed

Masao Sakuraba, Katsutoshi Sugawara, Junichi Murota

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　470　98-103　2011

DOI： 10.4028/www.scientific.net/KEM.470.98 　

ISSN： 1013-9826
Room-Temperature Resonant Tunneling Diode with High-Ge-Fraction Strained Si1-xGex and Nanometer-Order Ultrathin Si Peer-reviewed

Masao Sakuraba, Kuniaki Takahashi, Junichi Murota

SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES　33　(6)　379-387　2010

DOI： 10.1149/1.3487569 　

ISSN： 1938-5862
Atomically controlled processing in strained Si-based CVD epitaxial growth Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings　1513-1516　2010

DOI： 10.1109/ICSICT.2010.5667510 　
Atomically controlled plasma processing for epitaxial growth of group IV semiconductors Invited Peer-reviewed

Masao Sakuraba, Junichi Murota

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings　1521-1524　2010

DOI： 10.1109/ICSICT.2010.5667504 　
Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping Peer-reviewed

Yohei Chiba, Masao Sakuraba, Bernd Tillack, Junichi Murota

THIN SOLID FILMS　518　S231-S233　2010/01

DOI： 10.1016/j.tsf.2009.10.095 　

ISSN： 0040-6090
Heavy carbon atomic-layer doping at Si-1 (-) Ge-x(x)/Si heterointerface Peer-reviewed

Tomoya Hirano, Masao Sakuraba, Bernd Tillack, Junichi Murota

THIN SOLID FILMS　518　S222-S225　2010/01

DOI： 10.1016/j.tsf.2009.10.093 　

ISSN： 0040-6090
Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD Peer-reviewed

Takayuki Nosaka, Masao Sakuraba, Bernd Tillack, Junichi Murota

THIN SOLID FILMS　518　S140-S142　2010/01

DOI： 10.1016/j.tsf.2009.10.073 　

ISSN： 0040-6090
Heavy atomic-layer doping of nitrogen in Si1-xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD Peer-reviewed

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

THIN SOLID FILMS　518　S62-S64　2010/01

DOI： 10.1016/j.tsf.2009.10.056 　

ISSN： 0040-6090
Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating Peer-reviewed

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

THIN SOLID FILMS　518　S57-S61　2010/01

DOI： 10.1016/j.tsf.2009.10.055 　

ISSN： 0040-6090
Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(100) heterostructure Peer-reviewed

Takahiro Seo, Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

SOLID-STATE ELECTRONICS　53　(8)　912-915　2009/08

DOI： 10.1016/j.sse.2009.04.016 　

ISSN： 0038-1101
Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(100) by ultraclean low-pressure CVD system Peer-reviewed

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

SOLID-STATE ELECTRONICS　53　(8)　877-879　2009/08

DOI： 10.1016/j.sse.2009.04.015 　

ISSN： 0038-1101
An electrical characterization of metal oxy-nitride deposited by an ECR sputtering for MIS gates Peer-reviewed

Hiroyuki Arihara, Hiroshi Toyota, Junichi Murota, Masao Sakuraba, Yukio Fukuda, Toshiro Ono

Proc. 10th International Symposium on Sputtering & Plasma Processes　293-296　2009/07
Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures Peer-reviewed

Masao Sakuraba, Katsutoshi Sugawara, Junichi Murota

ULSI PROCESS INTEGRATION 6　25　(7)　229-236　2009

DOI： 10.1149/1.3203960 　

ISSN： 1938-5862
Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

ULSI PROCESS INTEGRATION 6　25　(7)　177-184　2009

DOI： 10.1149/1.3203954 　

ISSN： 1938-5862
Atomically controlled processing for group IV semiconductors Invited Peer-reviewed

Junichi Murota, Masao Sakuraba

ECS Transactions　22　(1)　111-120　2009

DOI： 10.1149/1.3152967 　

ISSN： 1938-5862 1938-6737
High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGeCVD Peer-reviewed

S. Takehiro, M. Sakuraba, J. Murota, T. Tsuchiya

Electrical Engineering in Japan　165　(3)　46-50　2008/11

DOI： 10.1002/eej.20597 　

ISSN： 0424-7760
High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth Peer-reviewed

Shinobu Takehiro, Masao Sakuraba, Toshiaki Tsuchiya, Junichi Murota

THIN SOLID FILMS　517　(1)　346-349　2008/11

DOI： 10.1016/j.tsf.2008.08.040 　

ISSN： 0040-6090
Local strain in Si/Si(0.6)Ge(0.4)/Si(100) heterostructures by stripe-shape patterning Peer-reviewed

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

THIN SOLID FILMS　517　(1)　300-302　2008/11

DOI： 10.1016/j.tsf.2008.08.094 　

ISSN： 0040-6090
Si epitaxial growth on self-limitedly B adsorbed Si(1-x)Ge(x)(100) by ultraclean low-pressure CVD system Peer-reviewed

Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

THIN SOLID FILMS　517　(1)　229-231　2008/11

DOI： 10.1016/j.tsf.2008.08.012 　

ISSN： 0040-6090
Structural change of atomic-order nitride formed on Si(1-x)Ge(x)(100) and Ge(100) by heat treatment Peer-reviewed

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

THIN SOLID FILMS　517　(1)　219-221　2008/11

DOI： 10.1016/j.tsf.2008.08.007 　

ISSN： 0040-6090
Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si(1-x)Ge(x)/Si(100) heterostructure Peer-reviewed

Takahiro Seo, Masao Sakuraba, Junichi Murota

THIN SOLID FILMS　517　(1)　110-112　2008/11

DOI： 10.1016/j.tsf.2008.08.037 　

ISSN： 0040-6090
Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD Invited Peer-reviewed

Masao Sakuraba, Daisuke Muto, Masaki Mori, Katsutoshi Sugawara, Junichi Murota

THIN SOLID FILMS　517　(1)　10-13　2008/11

DOI： 10.1016/j.tsf.2008.08.028 　

ISSN： 0040-6090
Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system Peer-reviewed

Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

APPLIED SURFACE SCIENCE　254　(19)　6090-6093　2008/07

DOI： 10.1016/j.apsusc.2008.02.131 　

ISSN： 0169-4332
Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition Peer-reviewed

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

APPLIED SURFACE SCIENCE　254　(19)　6086-6089　2008/07

DOI： 10.1016/j.apsusc.2008.02.132 　

ISSN： 0169-4332
Behavior of N atoms in atomic-order nitrided Si(0.5)Ge(0.5)(100) Peer-reviewed

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

APPLIED SURFACE SCIENCE　254　(19)　6021-6024　2008/07

DOI： 10.1016/j.apsusc.2008.02.125 　

ISSN： 0169-4332
Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si(1-x)Ge(x)/Si(100) heterostructure Peer-reviewed

Takahiro Seo, Masao Sakuraba, Junichi Murota

APPLIED SURFACE SCIENCE　254　(19)　6265-6267　2008/07

DOI： 10.1016/j.apsusc.2008.02.153 　

ISSN： 0169-4332
Atomically Controlled CVD Processing for Future Si-Based Devices Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4　1304-+　2008

DOI： 10.1109/ICSICT.2008.4734796 　
Hot carrier degradation of SiGe/Si heterointerface and experimental estimation of density of locally generated heterointerface traps Peer-reviewed

Toshiaki Tsuchiya, Seishi Mishima, Masao Sakuraba, Junichi Murota

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　46　(8A)　5015-5020　2007/08

DOI： 10.1143/JJAP.46.5015 　

ISSN： 0021-4922
Atomically Controlled Processing for Future Si-Based Devices Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

Future Trends in Microelectronics: Up the Nano Creek　246-258　2007/01/22
Publisher: John Wiley & Sons, Inc.
DOI： 10.1002/9780470168264.ch22 　
Fabrication of hole resonant tunneling diodes with nanometer order heterostructures of Si/strained Si1-xGex epitaxially grown on Si(100) Invited Peer-reviewed

Masao Sakuraba, Ryota Ito, Takahiro Seo, Junichi Murota

ECS Transactions　11　(6)　131-139　2007

DOI： 10.1149/1.2778371 　

ISSN： 1938-5862 1938-6737
Strain control of Si and Si1-xGex layers in the Si/Si1-xGex/Si heterostructures by stripe-shape patterning for future Si-based devices Invited Peer-reviewed

Junichi Murota, Jangwoong Uhm, Masao Sakuraba

ECS Transactions　11　(6)　91-99　2007

DOI： 10.1149/1.2778368 　

ISSN： 1938-5862 1938-6737
Atomically controlled CVD technology for group IV semiconductors Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings　440-443　2007

DOI： 10.1109/ICSICT.2006.306295 　
Epitaxial growth of P atomic layer doped Si film by alternate surface reactions of PH3 and Si2H6 on strained Si1-xGex/Si(100) in ultraclean low-pressure CVD Peer-reviewed

Yohei Chiba, Masao Sakuraba, Junichi Murota

SEMICONDUCTOR SCIENCE AND TECHNOLOGY　22　(1)　S118-S122　2007/01

DOI： 10.1088/0268-1242/22/1/S28 　

ISSN： 0268-1242
Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating Peer-reviewed

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

SEMICONDUCTOR SCIENCE AND TECHNOLOGY　22　(1)　S42-S45　2007/01

DOI： 10.1088/0268-1242/22/1/S10 　

ISSN： 0268-1242
Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD Peer-reviewed

Ryota Ito, Masao Sakuraba, Junichi Murota

SEMICONDUCTOR SCIENCE AND TECHNOLOGY　22　(1)　S38-S41　2007/01

DOI： 10.1088/0268-1242/22/1/S09 　

ISSN： 0268-1242
Strain control and electrical properties of stripe-patterned Si/Si1-xGex/Si(100) heterostructures Peer-reviewed

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

SEMICONDUCTOR SCIENCE AND TECHNOLOGY　22　(1)　S33-S37　2007/01

DOI： 10.1088/0268-1242/22/1/S08 　

ISSN： 0268-1242
Carbon doping effect on strain relaxation during Si1-x-yGexCy epitaxial growth on Si(100) at 500 degrees C Peer-reviewed

Hiroaki Nitta, Masao Sakuraba, Junichi Murota

SEMICONDUCTOR SCIENCE AND TECHNOLOGY　22　(1)　S5-S8　2007/01

DOI： 10.1088/0268-1242/22/1/S02 　

ISSN： 0268-1242
Atomically controlled processing for group IV semiconductors by chemical vapor deposition Invited Peer-reviewed

Junichi Murota, Masao Sakuraba, Bernd Tillack

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　45　(9A)　6767-6785　2006/09

DOI： 10.1143/JJAP.45.6767 　

ISSN： 0021-4922
Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices (Invited Paper) Invited Peer-reviewed

T. Tsuchiya, M. Sakuraba, J. Murota

Proc. 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Sendai, Japan, Jul. 3-5, 2006, (IEICE Technical Report, The Institute of Electronics, Information and Communication Engineers)　21-24　2006/07
Photo detection characteristics of Si/Si1-xGex/Si p-i-n diodes integrated with optical waveguides Peer-reviewed

A Yamada, M Sakuraba, J Murota

THIN SOLID FILMS　508　(1-2)　399-401　2006/06

DOI： 10.1016/j.tsf.2005.06.111 　

ISSN： 0040-6090
Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs Peer-reviewed

T Tsuchiya, M Sakuraba, J Murota

THIN SOLID FILMS　508　(1-2)　326-328　2006/06

DOI： 10.1016/j.tsf.2005.07.320 　

ISSN： 0040-6090
Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films Peer-reviewed

HS Cho, M Sakuraba, J Murota

THIN SOLID FILMS　508　(1-2)　301-304　2006/06

DOI： 10.1016/j.tsf.2005.06.116 　

ISSN： 0040-6090
Strain relaxation by stripe patterning in Si/Si(1-x)Gex/Si(100) heterostructures Peer-reviewed

J Uhm, M Sakuraba, J Murota

THIN SOLID FILMS　508　(1-2)　239-242　2006/06

DOI： 10.1016/j.tsf.2005.08.396 　

ISSN： 0040-6090
Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD Peer-reviewed

K Sugawara, M Sakuraba, J Murota

THIN SOLID FILMS　508　(1-2)　143-146　2006/06

DOI： 10.1016/j.tsf.2005.07.332 　

ISSN： 0040-6090
Carbon effect on strain compensation in Si1-x-yGexCy films epitaxially grown on Si(100) Peer-reviewed

H Nitta, J Tanabe, M Sakuraba, J Murota

THIN SOLID FILMS　508　(1-2)　140-142　2006/06

DOI： 10.1016/j.tsf.2005.06.105 　

ISSN： 0040-6090
Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1-x-yGexCy film deposited by ultraclean LPCVD Peer-reviewed

Hyunyoung Shim, Masao Sakuraba, Junichi Murota

THIN SOLID FILMS　508　(1-2)　36-39　2006/06

DOI： 10.1016/j.tsf.2005.07.327 　

ISSN： 0040-6090
Silicon Self-Diffusion in Heavily B-Doped Si Using Highly Pure ³⁰Si Epitaxial Layer Peer-reviewed

S. Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, T. Abe

ECS Trans.　2　(2)　287-297　2006/05/07

DOI： 10.1149/1.2195666 　

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Silicon Materials Science and Technology X (Edited by H. Huff, L. Fabry, D. Gilles, U. Goesele, T. Hattori, W. Huber, S. Ikeda, H. Iwai, P. Packan, H. Richter, M. Rodder, E. Weber and R. Wise, The Electrochem. Soc., Pennington, NJ, 2006)
Carbon doping effect on strain relaxation during Si1-x-yGe xCy epitaxial growth on Si(100) at 500°C

Hiroaki Nitta, Masao Sakuraba, Junichi Murota

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest　2006　2006
Atomic order thermal nitridation of Si1-xGex(100) at low temperatures by NH3 Peer-reviewed

Nao Akiyama, Masao Sakuraba, Junichi Murota

ECS Transactions　3　(7)　1205-1210　2006

DOI： 10.1149/1.2355915 　

ISSN： 1938-5862 1938-6737
A study on B atomic layer formation for B-doped Si1-xGe x(100) epitaxial growth using ultraclean LPCVD system Peer-reviewed

Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

ECS Transactions　3　(7)　861-866　2006

DOI： 10.1149/1.2355881 　

ISSN： 1938-5862 1938-6737
Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures Peer-reviewed

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

ECS Transactions　3　(7)　421-427　2006

DOI： 10.1149/1.2355839 　

ISSN： 1938-5862 1938-6737
Hetero-Interface-Trap Generation due to Hot Carriers in SiGe/Si-Hetero-MOSFETs Peer-reviewed

T. Tsuchiya, M. Sakuraba, J. Murota

IEEJ Transactions on Electronics, Information and Systems　126　(9)　1101-1106　2006
Publisher: The Institute of Electrical Engineers of Japan
DOI： 10.1541/ieejeiss.126.1101 　

ISSN： 0385-4221

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It is reported for the first time that hot-carrier-induced degradation occurs in a SiGe/Si heterostructure introduced into the channel region of SiGe/Si-hetero-MOSFETs, using a newly established elaborate low-temperature charge pumping (LTCP) technique. Moreover, the hetero-interface trap density generated and the width of the degraded region are estimated from the LTCP characteristics. These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.
High Performance pMOSFETs with High Ge Fraction Strained SiGe-heterostructure-channel and Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD Peer-reviewed

S. Takehiro, M. Sakuraba, J. Murota, T. Tsuchiya

IEEJ Transactions on Electronics, Information and Systems　126　(9)　1079-1082　2006
Publisher: The Institute of Electrical Engineers of Japan
DOI： 10.1541/ieejeiss.126.1079 　

ISSN： 0385-4221

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[Translated Version in English, Electr. Eng. Jpn., Vol.165, No.3, pp.46-50 (2008), doi:10.1002/eej.20597.]
Quantitative Evaluation of the Interface Trap Density in Nanometer-Thick SiGe/Si Heterostructures by Low-Temperature Charge-Pumping Technique Invited Peer-reviewed

T. Tsuchiya, M. Sakuraba, J. Murota

Proc. 13th Int. Workshop on The Physics of Semiconductor Devices (IWPSD-2005), New Delhi, India, Dec. 13-17, 2005　1171-1175　2005/12
Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper) Invited Peer-reviewed

J. Murota, M. Sakuraba, B. Tillack

Proc. Int. Symp. ULSI Process Integration IV, Spring Meeting of The Electrochem. Soc., Quebec City, Canada, May 15-20, 2005　53-66　2005/05
Separation by bonding Si islands (SBSI) for advanced CMOS LSI applications Peer-reviewed

T Yamazaki, S Ohmi, S Morita, H Ohri, J Murota, M Sakuraba, H Omi, T Sakai

IEICE TRANSACTIONS ON ELECTRONICS　E88C　(4)　656-661　2005/04

DOI： 10.1093/ietele/e88-c.4.656 　

ISSN： 0916-8524

eISSN： 1745-1353
Separation by bonding Si islands (SBST) for LSI applications Peer-reviewed

T Yamazaki, S Ohmi, S Morita, H Ohri, J Murota, M Sakuraba, H Omi, Y Takahashi, T Sakai

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　8　(1-3)　59-63　2005/02

DOI： 10.1016/j.mssp.2004.09.082 　

ISSN： 1369-8001

eISSN： 1873-4081
Integration of Si p-i-n diodes for light emitter and detector with optical waveguides Peer-reviewed

A Yamada, M Sakuraba, J Murota

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　8　(1-3)　435-438　2005/02

DOI： 10.1016/j.mssp.2004.09.108 　

ISSN： 1369-8001
Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching usingCl(2)/N-2/O-2 plasma Peer-reviewed

HS Cho, S Takehiro, M Sakuraba, J Murota

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　8　(1-3)　239-243　2005/02

DOI： 10.1016/j.mssp.2004.09.035 　

ISSN： 1369-8001
Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma Peer-reviewed

M Mori, T Seino, D Muto, M Sakuraba, J Murota

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　8　(1-3)　65-68　2005/02

DOI： 10.1016/j.mssp.2004.09.034 　

ISSN： 1369-8001
Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition Peer-reviewed

YC Jeong, M Sakuraba, J Murota

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　8　(1-3)　121-124　2005/02

DOI： 10.1016/j.mssp.2004.09.031 　

ISSN： 1369-8001
Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition Invited Peer-reviewed

T Kurosawa, T Komatsu, M Sakuraba, J Murota

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　8　(1-3)　125-129　2005/02

DOI： 10.1016/j.mssp.2004.09.025 　

ISSN： 1369-8001
Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH4 reaction Peer-reviewed

K Sugawara, M Sakuraba, J Murota

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　8　(1-3)　69-72　2005/02

DOI： 10.1016/j.mssp.2004.09.078 　

ISSN： 1369-8001
Determination of diffusivities of Si self-diffusion and Si self-interstitials using isotopically enriched single-or multi-Si-30 epitaxial layers Peer-reviewed

S Matsumoto, Aid, SR, T Sakaguchi, K Toyonaga, Y Nakabayashi, M Sakuraba, Y Shimamune, Y Hashiba, J Murota, K Wada, T Abe

Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices　864　425-436　2005

ISSN： 0272-9172
SiGe epitaxial growth and its atomic-layer control Invited Peer-reviewed

Junichi Murota, Masao Sakuraba

Shinku/Journal of the Vacuum Society of Japan　48　(1)　8-12　2005
Publisher: Vacuum Society of Japan
DOI： 10.3131/jvsj.48.8 　

ISSN： 0559-8516
Si self-diffusivity using isotopically pure Si-30 epitaxial layers Peer-reviewed

Aid, SR, T Sakaguchi, K Toyonaga, Y Nakabayashi, S Matumoto, M Sakuraba, Y Shimamune, Y Hashiba, J Murota, K Wada, T Abe

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　114　330-333　2004/12

DOI： 10.1016/j.mseb.2004.07.055 　

ISSN： 0921-5107
C Atomic Order Doping at Si/Si_1-xGe_x/Si Heterointerface and Improvement of Thermal Stability Peer-reviewed

K. Takahashi, T. Kobayashi, M. Sakuraba, J. Murota

Proc. SiGe: Materials Processing and Device (Edited by D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack, The Electrochem. Soc., Pennington, NJ, 2004)　PV.2004-07　915-922　2004/10
Electrical Properties of B-doped Polycrystalline Si_1-x-yGe_xC_y Film Deposited by Ultraclean Low-pressure CVD Peer-reviewed

H. Shim, M. Sakuraba, J. Murota

Proc. SiGe: Materials Processing and Device (Edited by D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack, The Electrochem. Soc., Pennington, NJ, 2004)　PV.2004-07　261-268　2004/10
Sidewall Protection by Nitrogen in Anisotropic Etching of P-doped Poly-Si_1-xGe_x Peer-reviewed

H.-S. Cho, S. Takehiro, M. Sakuraba, J. Murota

Proc. SiGe: Materials Processing and Device (Edited by D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack, The Electrochem. Soc., Pennington, NJ, 2004)　PV.2004-07　243-250　2004/10
Low-Temperature SiGe(C) Epitaxial Growth by Ultraclean Hot-Wall Low-Pressure CVD Invited Peer-reviewed

J. Murota, M. Sakuraba

Proc. SiGe: Materials Processing and Device (Edited by D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack, The Electrochem. Soc., Pennington, NJ, 2004)　PV.2004-07　825-836　2004/10
Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si 1-xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD Peer-reviewed

Doohwan Lee, Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Applied Surface Science　224　(1-4)　254-259　2004/03/15

DOI： 10.1016/j.apsusc.2003.08.052 　

ISSN： 0169-4332
Ar plasma irradiation effects in atomically controlled Si epitaxial growth Peer-reviewed

D Muto, M Sakuraba, T Seino, J Murota

APPLIED SURFACE SCIENCE　224　(1-4)　210-214　2004/03

DOI： 10.1016/j.apsusc.2003.08.048 　

ISSN： 0169-4332
Effect of carbon on the thermal stability of a Si atomic layer on Ge(100) Peer-reviewed

M Fujiu, K Takahashi, M Sakuraba, J Murota

APPLIED SURFACE SCIENCE　224　(1-4)　206-209　2004/03

DOI： 10.1016/j.apsusc.2003.08.047 　

ISSN： 0169-4332
Formation of heavily P-doped Si epitaxial film on Si(100) by multiple atomic-layer doping technique Peer-reviewed

Y Shimamune, M Sakuraba, J Murota, B Tillack

APPLIED SURFACE SCIENCE　224　(1-4)　202-205　2004/03

DOI： 10.1016/j.apsusc.2003.08.033 　

ISSN： 0169-4332
Epitaxial growth of N delta doped Si films on Si(100) by alternately supplied NH3 and SiH4 Peer-reviewed

YC Jeong, M Sakuraba, J Murota

APPLIED SURFACE SCIENCE　224　(1-4)　197-201　2004/03

DOI： 10.1016/j.apsusc.2003.08.034 　

ISSN： 0169-4332
Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment Peer-reviewed

J Noh, S Takehiro, M Sakuraba, J Murota

APPLIED SURFACE SCIENCE　224　(1-4)　77-81　2004/03

DOI： 10.1016/j.apsusc.2003.08.046 　

ISSN： 0169-4332
Proposal of a multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers Peer-reviewed

D Sasaki, S Ohmi, M Sakuraba, J Murota, T Sakai

APPLIED SURFACE SCIENCE　224　(1-4)　270-273　2004/03

DOI： 10.1016/j.apsusc.2003.08.107 　

ISSN： 0169-4332
Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector Peer-reviewed

A Yamada, M Sakuraba, J Murota, K Wada, LC Kimerling

2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS　142-144　2004
Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs Peer-reviewed

T Tsuchiya, M Sakuraba, J Murota

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS　449-454　2004

DOI： 10.1109/RELPHY.2004.1315370 　
Atomically controlled impurity doping in Si-based CVD epitaxial growth Invited Peer-reviewed

J Murota, M Sakuraba, B Tillack

HIGH-MOBILITY GROUP-IV MATERIALS AND DEVICES　809　201-212　2004

ISSN： 0272-9172
Atomically controlled impurity doping for future Si-based devices Invited Peer-reviewed

J Murota, M Sakuraba, B Tillack

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS　557-562　2004
Atomically controlled processing for future Si-based devices Invited Peer-reviewed

J Murota, M Sakuraba, S Takehiro

2004 IEEE WORKSHOP ON MICROELECTRONIC AND ELECTRON DEVICES　31-34　2004

DOI： 10.1109/WMED.2004.1297343 　
Atomically controlled technology for future Si-based devices Peer-reviewed

J Murota, M Sakuraba, B Tillack

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY　95-96　607-616　2004

DOI： 10.4028/www.scientific.net/SSP.95-96.607 　

ISSN： 1012-0394
Atomically Controlled Processing for SiGe-Based Ultimate-Small Devices Invited Peer-reviewed

J. Murota, M. Sakuraba, S. Takehiro

Proc. 22nd Electronic Materials Symp. (EMS-22)　31-34　2003/07/02
Atomically Controlled Processing for SiGe-Based Ultimate-Small Devices (Invited Paper) Invited Peer-reviewed

J. Murota, M. Sakuraba, S. Takehiro

Proc. 22nd Electronic Materials Symp. (EMS-22), Biwako, Jul. 2-4, 2003　39-42　2003/07
Atomic-layer doping in Si by alternately supplied NH3 and SiH4 Peer-reviewed

YC Jeong, M Sakuraba, J Murota

APPLIED PHYSICS LETTERS　82　(20)　3472-3474　2003/05

DOI： 10.1063/1.1576910 　

ISSN： 0003-6951
Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer Peer-reviewed

J Noh, M Sakuraba, J Murota, S Zaima, Y Yasuda

APPLIED SURFACE SCIENCE　212　679-683　2003/05

DOI： 10.1016/S0169-4332(03)00067-9 　

ISSN： 0169-4332

eISSN： 1873-5584
Work function of impurity-doped polycrystalline Si1-x-yGexCy film deposited by ultraclean low-pressure CVD Peer-reviewed

HY Shim, M Sakuraba, T Tsuchiya, J Murota

APPLIED SURFACE SCIENCE　212　209-212　2003/05

DOI： 10.1016/S0169-4332(03)00079-5 　

ISSN： 0169-4332
Si epitaxial growth on SiH3CH3 reacted Ge(100) and intermixing between Si and Ge during heat treatment Peer-reviewed

K Takahashi, M Fujiu, M Sakuraba, J Murota

APPLIED SURFACE SCIENCE　212　193-196　2003/05

DOI： 10.1016/S0169-4332(03)00069-2 　

ISSN： 0169-4332
W delta doping in Si(100) using ultraclean low-pressure CVD Peer-reviewed

T Kanaya, M Sakuraba, J Murota

APPLIED SURFACE SCIENCE　212　684-688　2003/05

DOI： 10.1016/S0169-4332(03)00416-1 　

ISSN： 0169-4332
Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(100) to SiH4 and to Ar plasma Peer-reviewed

M Sakuraba, D Muto, T Seino, J Murota

APPLIED SURFACE SCIENCE　212　197-200　2003/05

DOI： 10.1016/S0169-4332(03)00072-2 　

ISSN： 0169-4332
Si epitaxial growth on the atomic-order nitrided Si(100) surface in SiH4 reaction Peer-reviewed

Y Jeong, M Sakuraba, T Matsuura, J Murota

RAPID THERMAL PROCESSING FOR FUTURE SEMICONDUCTOR DEVICES　139-144　2003
Heavy doping characteristics of Si films epitaxially grown at 450 degrees C by alternately supplied PH3 and SiH4 Peer-reviewed

Y Shimanume, M Sakuraba, T Matsuura, J Murota

RAPID THERMAL PROCESSING FOR FUTURE SEMICONDUCTOR DEVICES　145-150　2003

DOI： 10.1016/B978-044451339-7/50021-0 　
SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Paper) Invited Peer-reviewed

J. Murota, M. Sakuraba

Proc. 2nd Int. ECS Semiconductor Technol. Conf. (ISTC), (Edited by M. Yang, G. S. Mathad, M. Koyanagi, M. Engelhardt, M. Bonkohara and H. Iwai, The Electrochem. Soc., Pennington, NJ, 2002)　2002-17　135-147　2002/09
Thermal nitridation of ultrathin SiO2 on Si by NH3 Peer-reviewed

O Jintsugawa, M Sakuraba, T Matsuura, J Murota

SURFACE AND INTERFACE ANALYSIS　34　(1)　456-459　2002/08

DOI： 10.1002/sia.1337 　

ISSN： 0142-2421
Atomically controlled processing for group IV semiconductors Peer-reviewed

J Murota, T Matsuura, M Sakuraba

SURFACE AND INTERFACE ANALYSIS　34　(1)　423-431　2002/08

DOI： 10.1002/sia.1331 　

ISSN： 0142-2421
Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH₄ Reaction Peer-reviewed

Y. Jeong, M. Sakuraba, T. Matsuura, J. Murota

Proc. 6th Symp. Atomic-Scale Surface and Interface Dynamics (The Japan Soc. for the Promotion of Sci., Mar. 1, 2002, Tokyo)　151-154　2002/05/01
Atomically Controlled Processing for Group IV Semiconductors Peer-reviewed

J. Murota, T. Matsuura, M. Sakuraba

Proc. 6th Symp. Atomic-Scale Surface and Interface Dynamics (The Japan Soc. for the Promotion of Sci., Mar. 1, 2002, Tokyo)　107-115　2002/03/01

DOI： 10.1002/sia.1331 　
Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGexCVD Peer-reviewed

T Yamashiro, T Kikuchi, M Ishii, F Honma, M Sakuraba, T Matsuura, J Murota, T Tsuchiya

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　89　(1-3)　120-124　2002/02

DOI： 10.1016/S0921-5107(01)00814-5 　

ISSN： 0921-5107
SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD Peer-reviewed

D. Lee, M. Sakuraba, T. Matsuura, J. Murota, T. Tsuchiya

Device Research Conference - Conference Digest, DRC　2002-　83-84　2002
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/DRC.2002.1029525 　

ISSN： 1548-3770
Si epitaxial growth on atomic-order nitrided Si(100) using an ECR plasma Peer-reviewed

M Mori, T Seino, D Muto, M Sakuraba, J Murota

PLASMA PROCESSING XIV　2002　(17)　17-24　2002
Atomic-layer doping of N in Si epitaxial growth on Si(100) and its thermal stability Peer-reviewed

Y Jeong, M Sakuraba, T Matsuura, J Murota

SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2　2002　(2)　287-296　2002
CVD法によるSi_1-x-yGe_xC_yエピタキシャル成長とドーピング制御 Peer-reviewed

室田淳一, 櫻庭政夫, 松浦孝

応用物理学会誌（応用物理学会）　70　(9)　1082-1086　2001/09
Publisher:
DOI： 10.11470/oubutsu1932.70.1082 　

ISSN： 0369-8009
Epitaxial growth of heavily P-doped Si films at 450 degrees C by alternately supplied PH3 and SiH4 Invited Peer-reviewed

Y Shimamune, M Sakuraba, T Matsuura, J Murota

JOURNAL DE PHYSIQUE IV　11　(PR3)　255-260　2001/08

DOI： 10.1051/jp4:2001332 　

ISSN： 1155-4339
Atomic-order thermal nitridation of Si(100) and subsequent growth of Si Peer-reviewed

T Watanabe, M Sakuraba, T Matsuura, J Murota

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　19　(4)　1907-1911　2001/07

DOI： 10.1116/1.1359549 　

ISSN： 0734-2101
Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH3-H-2 gas system Peer-reviewed

D Lee, T Noda, H Shim, M Sakuraba, T Matsuura, J Murota

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　40　(4B)　2697-2700　2001/04

DOI： 10.1143/JJAP.40.2697 　

ISSN： 0021-4922
CVD SiGe(C) epitaxial growth and its application to MOS devices Invited Peer-reviewed

J Murota, M Sakuraba, T Matsuura

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS　525-530　2001

DOI： 10.1109/ICSICT.2001.981533 　
Atomic-layer doping in Si by alternately supplied PH3 and SiH4 Peer-reviewed

Y Shimamune, M Sakuraba, T Matsuura, J Murota

THIN SOLID FILMS　380　(1-2)　134-136　2000/12

DOI： 10.1016/S0040-6090(00)01487-5 　

ISSN： 0040-6090
Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD Peer-reviewed

T Noda, D Lee, H Shim, M Sakuraba, T Matsuura, J Murota

THIN SOLID FILMS　380　(1-2)　57-60　2000/12

DOI： 10.1016/S0040-6090(00)01469-3 　

ISSN： 0040-6090
Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_1-x-yGe_xC_y on Si (100) by Ultraclean LPCVD Peer-reviewed

D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima, Mie, Japan, Nov. 19-24, 2000　270-273　2000/11/19
Very Low-Resistive Si Epitaxial Growth at 450^oC by Alternately Supplied PH₃ and SiH₄ Peer-reviewed

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima, Mie, Japan, Nov. 19-24, 2000　266-269　2000/11/19
Surface Reaction of Silane and Methylsilane on Ge (100) Peer-reviewed

M. Fujiu, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima, Mie, Japan, Nov. 19-24, 2000　262-265　2000/11/19
Nitrogen-Doped Si Epitaxial Growth by Alternately Supplied NH₃ and SiH₄ Peer-reviewed

T. Watanabe, Y. Jeong, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima, Mie, Japan, Nov. 19-24, 2000　258-261　2000/11/19
Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH₃ Gas Peer-reviewed

O. Jintsugawa, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima, Mie, Japan, Nov. 19-24, 2000　227-230　2000/11/19
Atomically Controlled Processing for Fabrication of Si-Based Ultimate-Small Devices Peer-reviewed

J. Murota, T. Matsuura, M. Sakuraba

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima, Mie, Japan, Nov. 19-24, 2000　131-134　2000/11
Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition Peer-reviewed

Y Shimamune, M Sakuraba, T Matsuura, J Murota

APPLIED SURFACE SCIENCE　162　390-394　2000/08

DOI： 10.1016/S0169-4332(00)00221-X 　

ISSN： 0169-4332
Surface reaction of CH3SiH3 on Ge(100) and Si(100) Peer-reviewed

T Takatsuka, M Fujiu, M Sakuraba, T Matsuura, J Murota

APPLIED SURFACE SCIENCE　162　156-160　2000/08

DOI： 10.1016/S0169-4332(00)00185-9 　

ISSN： 0169-4332
Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs Peer-reviewed

T Tsuchiya, K Goto, M Sakuraba, T Matsuura, J Murota

THIN SOLID FILMS　369　(1-2)　379-382　2000/07

DOI： 10.1016/S0040-6090(00)00894-4 　

ISSN： 0040-6090
Segregation and diffusion of impurities from doped Si1-xGex films into silicon Peer-reviewed

S Kobayashi, T Aoki, N Mikoshiba, M Sakuraba, T Matsuura, J Murota

THIN SOLID FILMS　369　(1-2)　222-225　2000/07

DOI： 10.1016/S0040-6090(00)00811-7 　

ISSN： 0040-6090
Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction Peer-reviewed

A Ichikawa, Y Hirose, T Ikeda, T Noda, M Fujiu, T Takatsuka, A Moriya, M Sakuraba, T Matsuura, J Murota

THIN SOLID FILMS　369　(1-2)　167-170　2000/07

DOI： 10.1016/S0040-6090(00)00799-9 　

ISSN： 0040-6090
CVD Si_1-xGe_xエピタキシャル成長とドーピング制御 Peer-reviewed

室田淳一, 櫻庭政夫, 松浦孝

日本結晶成長学会誌（日本結晶成長学会）　27　(4)　171-178　2000/04

DOI： 10.19009/jjacg.27.4_171 　
Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD Peer-reviewed

P Han, M Sakuraba, YC Jeong, K Bock, T Matsuura, J Murota

JOURNAL OF CRYSTAL GROWTH　209　(2-3)　315-320　2000/02

DOI： 10.1016/S0022-0248(99)00562-X 　

ISSN： 0022-0248

eISSN： 1873-5002
Effect of Si/Si1-yCy/Si barriers the characteristics of Si1-xGex/Si resonant tunneling structures Peer-reviewed

P Han, XM Cheng

CHINESE PHYSICS LETTERS　17　(11)　844-846　2000

DOI： 10.1088/0256-307X/17/11/023 　

ISSN： 0256-307X

eISSN： 1741-3540
Segregation and diffusion of phosphorus from doped Si1-xGex films into silicon Peer-reviewed

S Kobayashi, M Iizuka, T Aoki, N Mikoshiba, M Sakuraba, T Matsuura, J Murota

JOURNAL OF APPLIED PHYSICS　86　(10)　5480-5483　1999/11

DOI： 10.1063/1.371549 　

ISSN： 0021-8979
Atomically Controlled Processing for Si-Based Ultrasmall Devices (Invited Paper) Invited Peer-reviewed

J. Murota, T. Matsuura, M. Sakuraba

Ext. Abs. 18th Symp. Future Electron Devices (FED), Tokyo, Oct. 20-21, 1999　65-70　1999/10/20
Layer-by-layer growth of silicon nitride films by NH3 and SiH4 Peer-reviewed

T Watanabe, M Sakuraba, T Matsuura, J Murota

JOURNAL DE PHYSIQUE IV　9　(P8)　333-340　1999/09

DOI： 10.1051/jp4:1999841 　

ISSN： 1155-4339
Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD Peer-reviewed

A Moriya, M Sakuraba, T Matsuura, J Murota

THIN SOLID FILMS　343　541-544　1999/04

DOI： 10.1016/S0040-6090(98)01694-0 　

ISSN： 0040-6090
Phosphorus diffusion from doped Si1-xGex films into silicon

S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, J. Murota

Materials Research Society Symposium - Proceedings　568　265-269　1999
Publisher: Materials Research Society
DOI： 10.1557/proc-568-265 　

ISSN： 0272-9172
Super self-aligned processing for sub 0.1 mu m MOS devices using selective Si1-xGexCVD Peer-reviewed

T Kikuchi, T Yamashiro, A Moriya, T Noda, Y Yamamoto, CY Deng, M Sakuraba, T Matsuura, J Murota

ULSI PROCESS INTEGRATION　99　(18)　147-153　1999
CVD Si1-xGex epitaxial growth and its application to MOS devices Invited Peer-reviewed

J Murota, M Sakuraba, T Matsuura

MICROELECTRONIC DEVICE TECHNOLOGY III　3881　33-45　1999

DOI： 10.1117/12.360548 　

ISSN： 0277-786X
Surface termination of the Ge(100) and Si(100) surfaces by using DHF solution dipping Peer-reviewed

M Sakuraba, T Matsuura, J Murota

III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS　535　281-286　1999

ISSN： 0272-9172
High quality Si1-xGex epitaxial growth by CVD Invited Peer-reviewed

J Murota, M Sakuraba, T Matsuura

PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON　99　(1)　189-202　1999
Separation between surface adsorption and reaction of NH3 on Si(100) by flash heating Peer-reviewed

T Watanabe, M Sakuraba, T Matsuura, J Murota

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　38　(1B)　515-517　1999/01

DOI： 10.1143/JJAP.38.515 　

ISSN： 0021-4922
Atomic-Layer Nitridation of Si(100) by NH₃ Using Flash Heating Peer-reviewed

T. Watanabe, M. Sakuraba, T. Matsuura, J. Murota

Proc. Symp. Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis (Edited by M.D. Allendorf, M.R. Zachariah, L. Mountziaris and A.H. McDaniel, The Electrochem. Soc., Pennington, NJ, 1998)　PV.98-23　69-74　1998/11
Atomic-Layer Adsorption of P on Si(100) by Using Ultraclean LPCVD Peer-reviewed

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

Proc. Symp. Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis (Edited by M.D. Allendorf, M.R. Zachariah, L. Mountziaris and A.H. McDaniel, The Electrochem. Soc., Pennington, NJ, 1998)　PV.98-23　58-62　1998/11
Low-temperature reaction of CH4 on Si(100) Peer-reviewed

A Izena, M Sakuraba, T Matsuura, J Murota

JOURNAL OF CRYSTAL GROWTH　188　(1-4)　131-136　1998/06

DOI： 10.1016/S0022-0248(98)00076-1 　

ISSN： 0022-0248
Process Technology for Sub 0.1μm Si Devices Peer-reviewed

J. Murota, T. Matsuura, M. Sakuraba

“Future Trends in Microelectronics” (Edited by S. Luryi, J. Xu and A. Zaslavsky, John Wiley & Sons, Inc., Hoboken, NJ, 1999)　1998/05

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1998 Advanced Research Workshop on “Future Trends in Microelectronics: Off the Beaten Path”, Ile des Embiez, France, May 31-Jun. 5, 1998.
In-situ heavy doping of P and B in low-temperature Si1-xGex epitaxial growth using ultraclean LPCVD Peer-reviewed

J Murota, A Moriya, M Sakuraba, CJ Lee, T Matsuura

SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2　PV.98-1　822-833　1998
Low-temperature epitaxial growth of in-situ heavily B-doped Si1-xGex films using ultraclean LPCVD Peer-reviewed

A Moriya, M Sakuraba, T Matsuura, J Murota, Kawashima, I, N Yabumoto

EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES　533　349-354　1998

ISSN： 0272-9172
H-termination on Ge(100) and Si(100) by diluted HF dipping and by annealing in H-2 Peer-reviewed

M Sakuraba, T Matsuura, J Murota

CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING V　35　213-220　1998
Atomic-order thermal nitridation of silicon at low temperatures Peer-reviewed

Takeshi Watanabe, Akihiro Ichikawa, Mascio Sakuraba, Takashi Matsuura, Junichi Murota

Journal of the Electrochemical Society　145　(12)　4252-4256　1998
Publisher: Electrochemical Society Inc.
DOI： 10.1149/1.1838946 　

ISSN： 0013-4651
Fabrication of 0.1μm MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_1-xGe_x CVD Peer-reviewed

J. Murota, M. Ishii, K. Goto, M. Sakuraba, T. Matsuura, Y. Kudoh, M. Koyanagi

Proc. 27th Euro. Solid-State Device Res. Conf. (ESSDRC), Stuttgart, Germany, Sep. 22-24, 1997　376-379　1997/09/22

DOI： 10.1109/ESSDERC.1997.194444 　
Atomic-layer surface reaction of SiH4 on Ge(100) Peer-reviewed

T Watanabe, M Sakuraba, T Matsuura, J Murota

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　36　(6B)　4042-4045　1997/06

DOI： 10.1143/JJAP.36.4042 　

ISSN： 0021-4922
Initial growth characteristics of germanium on silicon in LPCVD using germane gas Peer-reviewed

S Kobayashi, M Sakuraba, T Matsuura, J Murota, N Mikoshiba

JOURNAL OF CRYSTAL GROWTH　174　(1-4)　686-690　1997/04

DOI： 10.1016/S0022-0248(97)00034-1 　

ISSN： 0022-0248
Phosphorus Doping Effect on Si_1-xGe_x Epitaxial Film Growth in the SiH₄-GeH₄-PH₃ Gas System Using Ultraclean LPCVD Peer-reviewed

C.J. Lee, M. Sakuraba, M. Ishii, T. Matsuura, J. Murota, I. Kawashima, N. Yabumoto

Proc. 14th Int. Conf. Chemical Vapor Deposition (CVD-XIV)/1997 (Edited by M.D. Allendorf and C. Bernard, The Electrochem. Soc., Pennington, NJ, 1997)　PV97-25　1356-1363　1997/01
Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH₃ Peer-reviewed

T. Watanabe, A. Ichikawa, M. Sakuraba, T. Matsuura, J. Murota

Proc. 14th Int. Conf. Chemical Vapor Deposition (CVD-XIV)/1997 (Edited by M.D. Allendorf and C. Bernard, The Electrochem. Soc., Pennington, NJ, 1997)　PV97-25　97-104　1997/01
0.1 mu m MOSFET with super self-aligned shallow junction electrodes Peer-reviewed

M Ishii, K Goto, M Sakuraba, T Matsuura, J Murota, Y Kudoh, M Koyanagi

ULSI SCIENCE AND TECHNOLOGY / 1997　1997　(3)　441-449　1997
Atomic-order layer growth of silicon nitride films at low temperatures Peer-reviewed

T Watanabe, M Sakuraba, T Matsuura, J Murota

PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION　96　(5)　504-509　1996
ATOMIC LAYER-BY-LAYER EPITAXY OF SILICON AND GERMANIUM USING FLASH HEATING IN CVD Peer-reviewed

J MUROTA, M SAKURABA, T WATANABE, T MATSUURA, Y SAWADA

JOURNAL DE PHYSIQUE IV　5　(C5)　1101-1108　1995/06

DOI： 10.1051/jphyscol:19955130 　

ISSN： 1155-4339
ATOMIC-LAYER EPITAXY CONTROL OF GE AND SI IN FLASH-HEATING CVD USING GEH4 AND SIH4 GASES Peer-reviewed

M SAKURABA, J MUROTA, T WATANABE, Y SAWADA, S ONO

APPLIED SURFACE SCIENCE　82-3　354-358　1994/12

DOI： 10.1016/0169-4332(94)90241-0 　

ISSN： 0169-4332
Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using GeH₄ and SiH₄ Gases Peer-reviewed

M. Sakuraba, J. Murota, T. Watanabe, Y. Sawada

Ext. Abs. 1994 Int. Conf. Solid State Devices and Materials (SSDM), Yokohama, Aug. 23-26, 1994　757-759　1994/08/23
STABILITY OF THE DIMER STRUCTURE FORMED ON SI(100) BY ULTRACLEAN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION Peer-reviewed

M SAKURABA, J MUROTA, S ONO

JOURNAL OF APPLIED PHYSICS　75　(7)　3701-3703　1994/04

DOI： 10.1063/1.356041 　

ISSN： 0021-8979
Stability of the Dimer Structure on the Si Film Epitaxially Grown on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition Peer-reviewed

M. Sakuraba, J. Murota, S. Ono

Proc. Int. Conf. Advanced Microelectronic Devices and Processing (AMDP), Sendai, Mar. 3-5, 1994　445-448　1994/03/03
Stability of the Si(100) Surface Epitaxially Grown by CVD Peer-reviewed

M. Sakuraba, J. Murota, S. Ono

Ext. Abs. 1993 Int. Conf. Solid State Devices and Materials (SSDM), Makuhari, Aug. 29-Sep. 1, 1993　373-375　1993/08/29
SILICON ATOMIC LAYER GROWTH USING FLASH HEATING IN CVD Peer-reviewed

M SAKURABA, J MUROTA, S ONO

JOURNAL DE PHYSIQUE IV　3　(C3)　449-456　1993/08

DOI： 10.1051/jp4:1993362 　

ISSN： 1155-4339
Atomic Layer Growth of Si in Flash Heating CVD Using SiH₄ Gas Peer-reviewed

M. Sakuraba, J. Murota, S. Ono

Proc. 12th Int. Symp. Chemical Vapor Deposition (CVD-XII) (Edited by K.F. Jensen and G.W. Cullen, The Electrochem. Soc., Pennington, NJ, 1993)　PV.93-2　110-116　1993/05
SILICON ATOMIC LAYER GROWTH CONTROLLED BY FLASH HEATING IN CHEMICAL-VAPOR DEPOSITION USING SIH4 GAS Peer-reviewed

J MUROTA, M SAKURABA, S ONO

APPLIED PHYSICS LETTERS　62　(19)　2353-2355　1993/05

DOI： 10.1063/1.109416 　

ISSN： 0003-6951
ATOMIC LAYER EPITAXY OF GERMANIUM ON SILICON USING FLASH HEATING CHEMICAL VAPOR-DEPOSITION Peer-reviewed

M SAKURABA, J MUROTA, N MIKOSHIBA, S ONO

JOURNAL OF CRYSTAL GROWTH　115　(1-4)　79-82　1991/12

DOI： 10.1016/0022-0248(91)90716-I 　

ISSN： 0022-0248
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD Peer-reviewed

J MUROTA, M SAKURABA, N MIKOSHIBA, S ONO

JOURNAL DE PHYSIQUE IV　1　(C2)　803-808　1991/09

DOI： 10.1051/jp4:1991294 　

ISSN： 1155-4339
Atomic Layer Control of Germanium and Silicon on Silicon Using Flash Heating in Ultraclean Chemical Vapor Deposition Peer-reviewed

M. Sakuraba, J. Murota, N. Mikoshiba, S. Ono

Ext. Abs. 1991 Int. Conf. Solid State Devices and Materials (SSDM), Yokohama, Aug. 27-29, 1991　147-149　1991/08/27

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Misc. 10

Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD

SAKURABA Masao, MUTO Daisuke, MORI Masaki, SUGAWARA Katsutoshi, MUROTA Junichi

2006　(15)　39-43　2006/10/03
Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs

TSUCHIYA Toshiaki, SAKURABA Masao, MUROTA Junichi

2006　(15)　1-6　2006/10/03
SiGe技術の最新研究動向

財満鎭明, 櫻庭政夫, 室田淳一

電子材料　6　(6)　97-103　2003/06
Publisher: 工業調査会
ISSN： 0387-0774
CVD Si_1-x-yGe_xC_yエピタキシャル成長とドーピング

室田淳一, 櫻庭政夫, 松浦孝, 高澤裕真, 森谷敦, 野田孝暁, 国井泰夫

日立国際電気技報　1　2-10　2001/01
Publisher: 日立国際電気
CVD Si_1-xGe_xエピタキシャル成長とドーピング制御

室田淳一, 櫻庭政夫, 松浦孝

日本結晶成長学会誌　27　171-178　2000/04
Publisher: 日本結晶成長学会
DOI： 10.19009/jjacg.27.4_171 　
Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean LPCVD

SHIMAMUNE Yosuke, SAKURABA Masao, MATSUURA Takashi, MUROTA Junichi

Technical report of IEICE. SDM　99　(339)　13-18　1999/09/27
Publisher: 一般社団法人電子情報通信学会
ISSN： 0913-5685

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Atomic-layer adsorption of P on Si(100) and Ge(100) at 200-750℃ by PH_3 was investigated using an ultraclean low-pressure chemical vapor deposition system. At 300℃, the PH_3 adsorption was suppressed on the H-terminated Si surface, but PH_3 was adsorbed dissociatively on the H-free Si surface with saturation tendency to sub atomic-layer. At 450-750℃, the P atom concentration on the Si surface tended to saturate to about two or three atomic-layers by exposing PH_3 with little influence of the carrier gas (H_2 or He). When the P-adsorbed Si was kept in Ar and in H_2 at 650℃ after PH_3 exposure, the P atom concentration decreased to about one atomic-layer by thermal desorption and also by reduction due to hydrogen. On the Ge surface, PH_3 adsorption was suppressed by H-termination at 200℃, P atom concentration saturated to the single atomic-layer at 300-450℃. Furthermore, P desorption from the Ge surface at 450℃ occurred much faster than that from the Si surface at 650℃, while P bonded to Ge was stable at 300℃.
Atomic-Layer Thermal Nitridation Process of Si(100) Using NH3

WATANABE Takeshi, SAKURABA Masao, MATSUURA Takashi, MUROTA Junichi

Technical report of IEICE. SDM　98　(242)　43-48　1998/08/20
Publisher: The Institute of Electronics, Information and Communication Engineers

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Atomic-layer nitridation jof Si (100) in NH_3 has been investigated using an ultraclean low pressure cold-wall reactor system with flash heating in order to separate surface adsorption and reaction of HN_3. The N atom concentration (n_N) on Si (100) nitridized at 400℃ in NH_3 with flash heating by light irradiation of 60 J/cm^2 per shot initially increases with nitridation time (Xe flash light irradiation number) and tends to saturate to a certain value (〜2.7×10^<15>cm^-2). The reaction efficiency of NH_3 drastically increases as compared to the thermal nitridation without flash heating. By separating adsorption and reaction of NH_3, it is expected that NH_3 physically adsorbs on Si (100) according to Langmuir-type adsorption and then reaction proceeds. It was found by XPS that flash heated nitridation proceeds in the backbond of the surface Si atoms as well as thermal nitridation at 650℃.
Thermal Nitridation of the Si Surface Using NH3 at Low Temperature

WATANABE Takeshi, SAKURABA Masao, MATSUURA Takashi, MUROTA Junichi

Technical report of IEICE. SDM　97　(240)　1-6　1997/08/26
Publisher: The Institute of Electronics, Information and Communication Engineers

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Thermal nitridation of Si(100) in an NH_3 environment (124-1400Pa) at 300-650℃ was investigated using an ultraclean low pressure hot-wall reactor system. The N atom concentration (n_N) increased and the Si-hydride decreased with increasing NH_3 exposure time on the H-terminated Si surface at 300℃ and 400℃ after dipping into a 2%-diluted hydrofluoric acid solution followed by deionized water rinse. The Si-hydride became hardly observed when n_N reached to the surface Si atom concentration (6.8×10^<14>cm^<-2>). On the H-free Si surface after preheating in Ar at 650℃, n_N increased up to 〜2×10^<14>cm^<-2> with the appearance of the Si-hydride just after the NH_3 exposure at 300℃ and 400℃, indicating that NH_3 dissociatively adsorbs on the Si dangling bonds. Further atomic-order nitridation by NH_3 was accompanied by the decrease of Si-hydride.
Initial Growth Characteristics of Ge on Si in Ultraclean LPCVD

Shin-ichi KOBAYASHI, Masao SAKURABA, Takashi MATSUURA, Junichi MUROTA, Nobuo MIKOSHIBA

19　(1)　52-56　1996

ISSN： 0387-6055
Heteroepitaxial Growth of Si-Ge System and its Applications

Murota J., Goto K., Sakuraba M., Sawada K.

1994　(2)　232-233　1994/09/26
Publisher: The Institute of Electronics, Information and Communication Engineers

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Books and Other Publications 12

雑誌 Newsがわかる特別編半導体がわかる2025

毎日新聞出版

毎日新聞出版　2025/03/27

ISBN: 4620794821

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スマホやクルマ、身近な家電からAIまで、電気を使うあらゆるものに欠かせないのが「半導体」。では、その正体は？知っているようで知らない半導体のこと、ピエール＆チップとともに調べに行きましょう！「半導体がわかる」シリーズ第3弾の2025年版では、半導体の基本から製造プロセス、発明の歴史など、これまでのコンテンツをバージョンアップし、よりわかりやすい解説とともにお届けします。今年のトピックスは「ウワサのAI半導体」。「半導体★大研究」のコーナーでは、ロジック半導体、メモリー、パワー半導体といったいろんな半導体についてざっくり紹介します。人気YouTuberものづくり太郎さんが教えてくれるは「今、熱いAIと後工程」のこと。「半導体を学べる学校」コーナーでは北海道から九州の高専・大学・技科大・大学院を紹介します。「月刊Newsがわかる」で大人気のマンガも復活!! 【本書の内容】 ●半導体ニュースクリップ ●半導体って何だろう ●一目でわかる半導体製造全プロセス ●半導体の歴史：ノーベル賞受賞者／そのとき日本の半導体は… ●半導体★大研究：ロジック半導体とメモリー／光半導体／センサー半導体／パワー半導体 ●数字で見る半導体 ●ウワサのAI半導体 ●半導体に関わる会社 ●半導体のくわしい製造プロセス材料・シリコンウェーハ：目指せ、99.999999999％前工程：シリコンウェーハからICチップができるまで後工程：ICチップから半導体デバイスができるまで徹底的にキレイに！シリコンウェーハの洗浄・乾燥 ●YouTuberものづくり太郎さんにインタビュー「今、熱いのはAIと後工程」 ●マンガ「熱血！半導体社会ドッジボーラーナゲル＆ウケル」 ●半導体を学べる学校に行こう旭川工業高等専門学校／奈良女子大学工学部／豊橋技術科学大学／東北大学大学院工学研究科／九州大学大学院システム情報科学府 ●半導体を学べるスポット ●ピエールとチップの感想文 ○半導体の素材や製造装置、検査装置を作る企業のコーナーもいっぱい子どもも大人も、電気や理系の知識がなくても、半導体について楽しくわかるための超入門書。これまでにない渾身の全100ページを読んだら、みんな半導体が好きになる！
宮城県半導体PR冊子「ゼロからわかる！世界にひろがる宮城の半導体」

株式会社ユーメディア

宮城県経済商工観光部新産業振興課高度電子機械産業振興班　2024/12/23

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スマートフォン、自動車、家電などの多くの製品に組み込まれている半導体は、私たちの生活に欠かせない重要な部品であるとともに、脱炭素や省電力、デジタル社会の実現など、様々な社会的課題の解決に不可欠なキーテクノロジーです。一方、半導体は普段目にする機会が少ないため、半導体がどういうものなのか、製造にあたってどのような企業、人が携わっているのかは、あまり知られていません。こうした状況をふまえ、この度、宮城県では、半導体や県内の半導体関連企業をPRするため、「ゼロからわかる！世界にひろがる宮城の半導体」を発行しました。本冊子では、半導体の役割や仕組み、種類、そして半導体産業に関わる宮城県内の企業、人についてご紹介しております。
展示パネル「半導体って何だろう？？」（「親子で知ろう！半導体ってなんだろう？inダテリウム」、主催：宮城県（経済商工観光部新産業振興課））

株式会社ジェイアール東日本企画仙台支社

宮城県（経済商工観光部新産業振興課）　2024/11/17

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化学や半導体について、親子で楽しみながら学ぶことができるイベントを開催します！大人気お笑い芸人である小島よしおさんとサイエンスインストラクターとして活躍する阿部清人さんの楽しいサイエンスショーやワークショップも開催します。
雑誌 Newsがわかる特別編半導体がわかる2024

毎日新聞出版

毎日新聞出版　2024/04/29

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スマホやパソコン、家電、自動車など、電気製品に使われている「半導体」。かつては「産業のコメ」といわれましたが、現在では経済安全保障のカギを握る重要な「戦略物質」として注目されています。その半導体について、発明からの歴史やノーベル賞受賞者、製造プロセスまでをわかりやすく紹介したのが「半導体がわかる2024」。2023年に発売した「半導体がわかる」は、一部の高等専門学校で教材として使われるなどご好評をいただき、1年足らずで完売しました。リニューアルした2024年度版には、日本の半導体産業復活のために期待がかかるラピダスへの取材、日本が高いシェアを維持しているパワー半導体の情報など、新コンテンツを追加。半導体を学べる高専・大学・大学院も紹介します。人気YouTuberものづくり太郎さんのインタビューなど、楽しいコンテンツも盛りだくさん！【本書の内容】 ●半導体ニュースクリップ ●そもそも半導体って何だろう ●半導体★大研究 ●半導体 75年のヒストリー ●半導体とノーベル賞 ●ラピダスがチャレンジ 2ナノメートルの先端ロジック半導体 ●話題のパワー半導体が地球を守る？ ●半導体の製造プロセス材料・シリコンウェーハを学ぶ目指せ、99.999999999％前工程～シリコンウェーハからICチップができるまで後工程～ICチップから半導体デバイスができるまで徹底的にキレイに！シリコンウェーハの洗浄＆乾燥 ●半導体に関わる会社 ●YouTuber ものづくり太郎さんにインタビュー「半導体には夢がある！」 ●世界最高の出力電力・出力電圧ダイヤモンドパワー半導体 ●半導体やエレクトロニクスがもっとわかるスポット ●半導体を学べる学校に行こう佐世保工業高等専門学校／東北大学大学院工学研究科／佐賀大学理工学部子どもでも、理系の知識がなくても、半導体についてざっくりわかる入門書。ニュース番組や日常会話で半導体の話題が出ても、このムックさえ読んでいれば「ああ、半導体ね～」と言えるようになっちゃいます。
雑誌 Newsがわかる特別編半導体がわかる

毎日新聞出版

毎日新聞出版　2023/04/29

ISBN: 9784620794648

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スマホやパソコン、家電、自動車など、電気製品に使われている「半導体」。実は発明されてから、まだたったの75年しかたっていないって、知っていましたか？その短い間に、世界をひっくり返すような大発明が何度も生まれ、半導体に関連した技術で4組ものノーベル賞受賞者が誕生しています。でも、半導体って何がそんなにすごいの？その答えを一緒に探しに行きましょう！本誌では、半導体の材料や製造プロセスをわかりやすい図で紹介。半導体を学べる高専・大学・大学院も紹介します。人気YouTuberものづくり太郎さんのインタビューやマンガなど、楽しいコンテンツを盛りだくさんでお届けします！ ◇目次【本書の内容】 ●半導体ニュースクリップ ●そもそも半導体って何だろう ●半導体★大研究 ●半導体 75年のヒストリー ●半導体とノーベル賞 ●マンガ科学少女電ちゃんは異世界転生しない件 ●数字で見る半導体 ●YouTuber ものづくり太郎さんにインタビュー「半導体には夢がある！」 ●目指せ、99.999999999％半導体材料・シリコンウェーハを学ぶ ●半導体の製造プロセス前工程〜シリコンウェーハからICチップができるまで徹底的にキレイに！シリコンウェーハの洗浄＆乾燥後工程〜ICチップから半導体デバイスができるまで ●半導体に関わる会社 ●半導体やエレクトロニクスがもっとわかるスポット ●半導体とSDGs ●全国半導体工場MAP ●半導体を学べる学校に行こう熊本高等専門学校／神奈川工科大学／東北大学大学院
Chapter 4: Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics (in "Chemical Vapor Deposition (CVD): Types, Uses and Selected Research" (ebook) (Edited by Monica Powell))

Masao Sakuraba, Hisanao Akima, Shigeo Sato

Nova Science Publishers, Inc.　2017/02/14

ISBN: 9781536109085
Chapter 4: Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics (in "Chemical Vapor Deposition (CVD): Types, Uses and Selected Research" (Book) (Edited by Monica Powell))

Masao Sakuraba, Hisanao Akima, Shigeo Sato

Nova Science Publishers, Inc.　2017/02/14

ISBN: 9781536108934
薄膜ハンドブック（第2版）（日本学術振興会薄膜第131委員会編）

櫻庭政夫

オーム社　2008/03/24

ISBN: 9784274205194
新訂版・表面科学の基礎と応用（日本表面科学会編）

室田淳一, 櫻庭政夫

エヌ・ティー・エス社　2004

ISBN: 4860430514
21世紀版・薄膜作成応用ハンドブック（權田俊一・監修）

室田淳一, 櫻庭政夫

エヌ・ティー・エス社　2003

ISBN: 9784860430191
半導体結晶成長（大野英男・編著）

室田淳一, 櫻庭政夫, 松浦孝

コロナ社　1999

ISBN: 9784339007046
ウェーハ表面完全性の創成・評価技術（津屋英樹・編著）

室田淳一, 松浦孝, 櫻庭政夫

サイエンスフォーラム社　1998

ISBN: 4916164148

Show all Show first 5

Presentations 320

Electrical Characteristics of Al-Gate MOS Diodes Using a 3C/4H Polytype-Heterostructure SiC Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method

Tatsunori Oki, Satoshi Watanabe, Iori Morita, Masao Sakuraba, Shigeo Sato, Hiroyuki Nagasawa, Maki Suemitsu, Yukimune Watanabe

The 11th Lecture Meeting of Advanced Power Semiconductors Division, The Japan Association of Applied Physics, Nov. 24-26, 2024, Takasaki, Japan.　2024/11
Quantitative evaluation of 3C-SiC/4H-SiC stacked structure MOS interface using scanning nonlinear dielectric microscopy

Y. Cho, H. Nagasaw, M. Sakuraba, S. Sato

2024/11/14

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Session: Power Device Analysis (Nov. 14, 2024)
Study of gate dielectric formation process and evaluation of electrical characteristics for high performance 4H-SiC-MOSFETs International-presentation

Tatsunori Oki, Masao Sakuraba, Shigeo Sato

15th International WorkShop on New Group IV Semiconductor Nanoelectronics　2024/10/22

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Abs.No.P-07, pp.55-56
Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy International-presentation

H. Nagasawa, M. Abe, T. Tanno, M. Musya, M. Sakuraba, S. Sato, Y. Watanabe, M. Suemitsu

Internatonal Conference on Silicon Carbide and Related Materials (ICSCRM)　2024/10/04

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Session ID: 19A, Epitaxial Growth 3, Paper ID: 226, Abst.pp. 733-734
4H-SiC-MOSFETの高性能化のためのゲート絶縁膜形成プロセスと電気特性評価に関する研究

沖竜徳, 櫻庭政夫, 佐藤茂雄

電気関係学会東北支部連合大会　2024/08/30

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No. 2H01-04-01
SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure International-presentation

H. Nagasawa, Y. Cho, M. Abe, T. Tanno, M. Musya, M. Sakuraba, Y. Sato, S. Sato

14th International WorkShop on New Group IV Semiconductor Nanoelectronics　2023/12/15
SNDM Study on Cubic and Hexagonal Epitaxially Stacked SiC MOS Interfaces International-presentation

Y. Cho, H. Nagasawa, M. Sakuraba, S. Sato

2023 MRS Fall Meeting & Exhibit　2023/11/28

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Symp.: CH01: Advanced Characterization Methods of Energy Material Applications, November 28, 2023, 20:00-22:00.
3C-SiC/4H-SiC積層構造MOS界面のSNDM評価

長康雄, 長澤弘幸, 櫻庭政夫, 佐藤茂雄

第84回応用物理秋季学術講演会　2023/09/21

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2023 年 9 月 21 日(木) 14:45〜15:00、講演番号: 21p-B201-6.
SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure International-presentation

H. Nagasawa, Y. Cho, M. Abe, T. Tanno, M. Musya, M. Sakuraba, Y. Sato, S. Sato

Internatonal Conference on Silicon Carbide and Related Materials (ICSCRM)　2023/09/19

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Session 15A: Process 2: MOS II (11:40-12:00, Sep. 19, 2023)
ウェット酸化を利用した二重イオン注入4H-SiC MOSFETの製作プロセスに関する研究

佐藤勇介, 渡辺聡, 櫻庭政夫, 佐藤茂雄

第70回応用物理学会春季学術講演会　2023/03/16

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13 半導体, 13.7 化合物及びパワーデバイス・プロセス技術・評価, 2023年3月16日(木) 13:30 〜 15:30, No.16p-PA04-4.
Fabrication Process of Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistor of 4H-SiC Utilizing Wet Oxidation International-presentation

Y. Sato, S. Watanabe, M. Sakuraba, S. Sato

13th International WorkShop on New Group IV Semiconductor Nanoelectronics　2023/01/24
Interface Structure of 3C-SiC and 4H-SiC Generated by Simultaneous Lateral Epitaxy

The 9th Lecture Meeting of Advanced Power Semiconductors Division, The Japan Association of Applied Physics, Nov. 24-26, 2024, Takasaki, Japan.　2022/12/21
電界効果トランジスタ高性能化のためのプラズマ窒化絶縁膜形成に関する研究

渋谷凱政, 櫻庭政夫, 佐藤茂雄

応用物理学会東北支部第76回講演会　2021/12/03

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No. 3a-A-5-3, pp. 64-65 (2021年12月3日 11:15-11:30)
SiC デバイス高性能化に向けた金属－半導体界面制御に関する研究

佐々木達矢, 櫻庭政夫, 佐藤茂雄

応用物理学会東北支部第76回講演会　2021/12/03

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No. 3a-A-4-2, pp. 54-55 (2021年12月3日 9:45-10:00)
Low-Energy Plasma Enhanced Chemical Vapor Deposition and In-Situ Doping for Junction Formation in Group-IV Semiconductor Devices International-presentation Invited

Masao Sakuraba, Shigeo Sato

Symp. G03: Semiconductor Process Integration 11, 236th Meeting of the Electrochem. Soc.　2019/10/15
Low-Energy Plasma Enhanced Epitaxy and In-Situ Doping for Group-IV Semiconductor Device Fabrication International-presentation Invited

Masao Sakuraba, Shigeo Sato

Collaborative Conf. on Materials Research (CCMR)　2019/06/04
Epitaxy and In-Situ Doping in Low-Energy Plasma CVD Processing for GroupIV Semiconductor Nanoelectronics International-presentation Invited

Masao Sakuraba, Shigeo Sato

11th Int. Symp. on Advanced Plasma Sci. and its Applications for Nitrides and Nanomaterials (ISPlasma2019) / 12th Int. Conf. on Plasma-Nano Technol. & Sci. (IC-PLANTS2019)　2019/03/19
Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Nanoelectronics International-presentation Invited

M. Sakuraba, H. Akima, S. Sato

11th Int. WorkShop on New Group IV Semiconductor Nanoelectronics　2018/02/23

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Abs.No.I-14, pp.27-28
Si-Ge Alloy and Si Epitaxy by Low-Energy Plasma CVD for Semiconductor Device Fabrication International-presentation Invited

M. Sakuraba, H. Akima, S. Sato

JSPS – FZ-Jülich Workshop –Atomically Controlled Processing for Ultra-large Scale Integration–　2016/11/24

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Abs.No.1-3 (pp.11-12)
Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Quantum Heterointegration in Nanoelectronics International-presentation Invited

M. Sakuraba, H. Akima, S. Sato

Energy Materials Nanotechnology (EMN) Meeting on Epitaxy　2016/09/04

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Abs.No.A19
Electronic Properties of Si/Si-Ge Alloy/Si(100) Heterostructures Formed by ECR Ar Plasma CVD without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, H. Akima, S. Sato

7th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VII) & Int. SiGe Technol. and Device Meeting (ISTDM 2016)　2016/06/07

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Abs.No.WE-PB-15
In-Situ B Doping Control in Si Film Deposition Using ECR Ar Plasma CVD without Substrate Heating International-presentation

K. Motegi, M. Sakuraba, H. Akima, S. Sato

7th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VII) & Int. SiGe Technol. and Device Meeting (ISTDM 2016)　2016/06/07

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Abs.No.WE-PB-13
Silicon-Carbon Alloy Film Formation on Si(100) Using SiH₄ and CH₄ Reaction under Low-Energy ECR Ar Plasma Irradiation International-presentation

S. Sasaki, M. Sakuraba, H. Akima, S. Sato

7th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VII) & Int. SiGe Technol. and Device Meeting (ISTDM 2016)　2016/06/07

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Abs.No.FE-PB-19
Current and voltage dependence of STM induced hydrogen desorption on Si(111) International-presentation

W. Li, S. Sato, H. Akima, M. Sakuraba

9th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2016/01/11

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Abs.No.P-16
Characteristics of B Doping in Si Epitaxial Growth on Si(100) Using ECR Ar Plasma CVD International-presentation

K. Motegi, M. Sakuraba, H. Akima, S. Sato

9th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2016/01/11

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Abs.No.P-17
Evaluation of Electronic Properties of Si/SiGe/Si(100) Heterostructures Formed by ECR Ar Plasma CVD International-presentation

N. Ueno, M. Sakuraba, H. Akima, S. Sato

9th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2016/01/11

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Abs.No.O-06
Group-IV Quantum-Heterostructure Formation Based on Low-Energy Plasma CVD towards Electronic Device Application International-presentation Invited

M. Sakuraba, H. Akima, S. Sato

Energy Materials Nanotechnology (EMN) Hong Kong Meeting　2015/12/09

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Abs.No.D11
Low-Energy Plasma CVD Processing for Quantum Heterointegration of Group-IV Semiconductors Invited

M. Sakuraba, H. Akima, S. Sato

2nd Joint IT Workshop of Moscow State University-Tohoku University　2015/09/07
A Fundamental Study on STM Lithography on Hydrogen-terminated Silicon Surface International-presentation

S. Sato, W. Li, H. Akima, M. Sakuraba

JSPS Int. Core-to-Core Program Workshop on Atomically Controlled Processing for Ultralarge Scale Integration　2015/07/09
Experimental Analysis of Macroscopic Quantum Tunneling Rate in Series Array of Nb/AlO_x/Nb Josephson Junctions International-presentation

Y. Osakabe, T. Onomi, H. Akima, M. Sakuraba, S. Sato

15th Int. Superconductive Electronics Conf. (ISEC 2015)　2015/07/06
運動視により局所運動を検出する神経網モデルのLSI化

守谷哲, 秋間学尚, 川上進, 矢野雅文, 中島康治, 櫻庭政夫, 佐藤茂雄

2015年電子情報通信学会総合大会　2015/03/10
Study on Surface Reaction in ECR Ar Plasma CVD of SiGe Alloy on Si(100) without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, S. Sato

Joint Symp. of 9th Int. Symp. on Medical, Bio- and Nano-Electronics, and 6th Int. Workshop on Nanoelectronics　2015/03/02

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Abs.No.P-10
VLSI Design of Neural Network Model for Local Motion Detection in Motion Stereo Vision International-presentation

H. Akima, S. Moriya, S. Kawakami, M. Yano, K. Nakajima, M. Sakuraba, S. Sato

2nd Int. Symp. on Brainware LSI　2015/03/02
VLSI Design of Neural Network Model for Local Motion Detection in Motion Stereo Vision International-presentation

Hisanao Akima, Satoshi Moriya, Susumu Kawakami, Masafumi Yano, Koji Nakajima, Masao Sakuraba, Shigeo Sato

The 2nd Int. Symp. on Brainware LSI　2015/03/02
Study on Surface Reaction in ECR Ar Plasma CVD of SiGe Alloy on Si(100) without Substrate Heating International-presentation

Naofumi. Ueno, Masao Sakuraba, Hisanao Akima, Shigeo Sato

Joint Symp. of 9th Int. Symp on Medical, Bio- and Nano-Electronics, and 6th Int. Workshop on Nanostructures & Nanoelectronics　2015/03/02
VLSI implementation of neural network model in local motion detection in motion stereo vision International-presentation

H. Akima, S. Moriya, S. Kawakami, M. Yano, K. Nakajima, M. Sakuraba, S. Sato

3rd RIEC Int. Symp. on Brain Functions and Brain Computer　2015/02/18
Quantum neural network and its application to optimization problems International-presentation

S. Sato, M. Kinjo, K. Nakajima, H. Akima, M. Sakuraba

3rd RIEC Int. Symp. on Brain Functions and Brain Computer　2015/02/18
VLSI implementation of neural network model in local motion detection in motion stereo vision International-presentation

Hisanao Akima, Satoshi Moriya, Susumu Kawakami, Masafumi Yano, Koji Nakajima, Masao Sakuraba, Shigeo Sato

The 3rd RIEC Int. Symp. on Brain Functions and Brain Computer　2015/02/18
Quantum neural network and its application to optimization problems International-presentation

Shigeo Sato, Mitsunaga Kinjo, Koji Nakajima, Hisanao Akima, Masao Sakuraba

The 3rd RIEC Int. Symp. on Brain Functions and Brain Computer　2015/02/18
Influence of Partial Pressures upon Rate Coefficients of SiH₄ and GeH₄ in ECR Ar Plasma CVD of Si_1-xGe_x on Si(100) without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, S. Sato

8th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2015/01/29

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Abs.No.P-10
Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition for Group-IV Semiconductor Quantum-Heterostructure International-presentation Invited

M. Sakuraba, S. Sato

Energy Materials Nanotechnology (EMN) Meeting on Photovoltaics　2015/01/12

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Abs.No.A13
Thin Film Formation of Si_1-xGe_x Alloy on Si(100) for Quantum-Effect Nano Heterostructure by ECR Ar Plasma CVD without Substrate Heating International-presentation Invited

M. Sakuraba, N. Ueno, S. Sato

JSPS Int. Core-to-Core Program Workshop on Atomically Controlled Processing for Ultralarge Scale Integration　2014/11/13

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Abs.No.6.2
Epitaxial Growth of Si/Strained Si_1-xGe_x Heterostructure on Si(100) by ECR Ar Plasma CVD without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, S. Sato

Symp. D-5 : "Control of Interfaces and Materials Processing for Nanoelectronics", International Union of Materi als Research Societies - International Conference in Asia (IUMRS-ICA)　2014/08/25

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Abs.No.D5-O26-003
Majority Neuron Circuit Having Large Fan-in with Non-Volatile Synaptic Weight International-presentation

Int. Joint Conf. on Neural Networks　2014/07/06
Characterization of Strain in Si_1-xGe_x Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, J. Murota, S. Sato

7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2014/01/27

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Abs.No.P-21
Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing International-presentation Invited

M. Sakuraba, J. Murota

Symp. E12: ULSI Process Integration 8 (224th Meeting of the Electrochem. Soc.)　2013/10/27
Formation and Characterization of Strained Si_1-xGe_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, J. Murota, S. Sato

Symp. E12: ULSI Process Integration 8 (224th Meeting of the Electrochem. Soc.)　2013/10/27
Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating International-presentation

Y. Abe, S. Kubota, M. Sakuraba, J. Murota, S. Sato

Symp. E12: ULSI Process Integration 8 (224th Meeting of the Electrochem. Soc.)　2013/10/27
Formation of Heavily B-Doped Si and Ge Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating International-presentation Invited

M. Sakuraba, J. Murota, S. Sato

JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/10/24

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Abs.No.01
Atomically Controlled CVD Processing of Group IV Semiconductors for Strain Engineering and Doping in Ultralarge Scale Integration International-presentation Invited

J. Murota, M. Sakuraba, B. Tillack

4th Int. Conf. on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT 4)　2013/07/07
Atomically Controlled Processing of Group IV Semiconductors by CVD for Ultralarge Scale Integration International-presentation Invited

J. Murota, M. Sakuraba and, B. Tillack

JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/06/06

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Abs.No.C2-2
Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH₄-B₂H₆-H₂ Gas Mixture without Substrate Heating International-presentation

Y. Abe, M. Sakuraba, J. Murota

8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8)　2013/06/02

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Abs.No.P1-4
Epitaxial Growth of Si_1-xGe_x Alloy on Si(100) by ECR Ar Plasma CVD in a SiH₄-GeH₄ Gas Mixture without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, J. Murota, S. Sato

8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8)　2013/06/02

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Abs.No.P1-8
Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_1-xGe_x/Si Resonant Tunneling Diode International-presentation

T. Kawashima, M. Sakuraba, J. Murota

8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8)　2013/06/02

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Abs.No.P1-27
DLTS Evaluation of GeN_X/Ge Structures Fabricated by ECR-Plasma Techniques International-presentation

H. Okamoto, H. Narita, T. Iwasaki, T. Ono, Y. Fukuda, Y. Otani, H. Toyota, M. Sakuraba, J. Murota, M. Niwano

The Joint Symp. of 7th Int.Symp. on Medical, Bio- and Nano-Electronics, 4th Int. Workshop on Nanostructures & Nanoelectronics, and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/03/07

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Abs.No.9
Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors International-presentation Invited

M. Sakuraba, J. Murota

6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/02/22

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Abs.No.D-3
Nitrogen Doping into Si Barriers and Modulation of Hole Tunneling Characteristics in Si_1-xGe_x/Si Resonant Tunneling Diode International-presentation

T. Kawashima, M. Sakuraba, J. Murota

6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/02/22

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Abs.No.P-15
Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH₄-B₂H₆-H₂ Gas Mixture without Substrate Heating International-presentation

Y. Abe, M. Sakuraba, J. Murota

6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/02/22

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Abs.No.P-16
Epitaxial Growth of Si_1-xGe_x on Si(100) by ECR Ar Plasma CVD from SiH₄-GeH₄ Gas Mixture without Substrate Heating International-presentation

N. Ueno, M. Sakuraba, J. Murota, S. Sato

6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/02/22

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Abs.No.P-17
Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH₄-B₂H₆-H₂ Gas Mixture without Substrate Heating International-presentation

S. Kubota, M. Sakuraba, J. Murota, S. Sato

6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"　2013/02/22

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Abs.No.P-18
Strain Control of Si and Si_1-x-yGe_xC_y Layers in Si/Si_1-x-yGe_xC_y/Si Heterostructures by Low-Pressure Chemical Vapor Deposition International-presentation Invited

J. Murota, T. Kikuchi, J. Hasegawa, M. Sakuraba

Symp. E17: 5th SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symp. (222nd Meeting of the Electrochem. Soc.)　2012/10/07
Strain Control of Si and Si_1-yC_y Layers in Si/Si_1-yC_y/Si(100) Heterostructures International-presentation

T. Kikuchi, M. Sakuraba, I. Costina, B. Tillack, J. Murota

6th Int. SiGe Technology and Device Meeting (ISTDM2012)　2012/06/04
Atomically Controlled Processing for Group IV Semiconductors International-presentation Invited

J. Murota, M. Sakuraba

4th French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2011)　2011/12/04

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p.33
Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_1-xGe_x/Si Quantum Heterostructure International-presentation Invited

M. Sakuraba, J. Murota

4th French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2011)　2011/12/04

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p.35
Atomically Controlled Formation of Strained Si_1-xGe_x/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode International-presentation

M. Sakuraba, J. Murota

Symp. E9: ULSI Process Integration 7 (220th Meeting of the Electrochem. Soc.)　2011/10/09
Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors International-presentation

M. Sakuraba, J. Murota

Symp. E9: ULSI Process Integration 7 (220th Meeting of the Electrochem. Soc.)　2011/10/09
Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth International-presentation

J. Murota, M. Sakuraba, B. Tillack

18th Euro. Conf. on Chemical Vapor Deposition (EuroCVD 18)　2011/09/04
Behavior of N Atoms after Thermal Nitridation of Si_1-xGe_x Surface International-presentation

T. Kawashima, M. Sakuraba, B. Tillack, J. Murota

7th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-7)　2011/08/27
Atomically Controlled CVD Processing for Doping in Future Si-Based Devices International-presentation Invited

J. Murota, M. Sakuraba, B. Tillack

2011 Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT)　2011/06/26
Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth International-presentation

J. Murota, M. Sakuraba

3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010)　2010/12/07

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p.55
Atomically Controlled Plasma Processing for Group IV Quantum Heterointegration International-presentation

M. Sakuraba, J. Murota

3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010)　2010/12/07

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p.116
Formation of Room-Temperature Resonant-Tunneling Quantum Heterostructures with High-Ge-Fraction Strained Si_1-xGe_x/Si(100) International-presentation

M. Sakuraba, J. Murota

3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010)　2010/12/07

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p.117
Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductors International-presentation

M. Sakuraba, J. Murota

10th IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010)　2010/11/01

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Proc.No.I12_07
Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth International-presentation

J. Murota, M. Sakuraba, B. Tillack

10th IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010)　2010/11/01

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Proc.No.I12_05
Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation International-presentation

M. Sakuraba, K. Sugawara, J. Murota

Int. Symp. on Technology Evolution for Silicon Nano-Eelectronics (ISTESNE)　2010/06/03
Room-Temperature Resonant Tunneling Diode with Nanometer-Order High-Ge-Fraction Strained Si_1-xGe_x/Si Heterostructures on Si(100) International-presentation

M. Sakuraba, K. Takahashi, J. Murota

Int. Symp. on Technology Evolution for Silicon Nano-Eelectronics (ISTESNE)　2010/06/03
Determination of Valence Band Alignment in SiO₂/Si/Si_0.55Ge_0.45/Si(100) Heterostructures International-presentation

A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba, J. Murota

5th Int. SiGe Technology and Device Meeting (ISTDM2010)　2010/05/24
Evolution of the Hydrogen Terminated Structure of the Si(100) Surface and Its Interaction with H₂ at 20-800^oC International-presentation

A. Uto, M. Sakuraba, M. Caymax, J. Murota

5th Int. SiGe Technology and Device Meeting (ISTDM2010)　2010/05/24
In-Situ Heavy B-Doped Si Epitaxial Growth on Tensile-Strained Si(100) by Ultraclean Low-Pressure CVD Using SiH₄ and B₂H₆ International-presentation

M. Nagato, M. Sakuraba, J. Murota, B. Tillack, Y. Inokuchi, Y. Kunii, H. Kurokawa

5th Int. SiGe Technology and Device Meeting (ISTDM2010)　2010/05/24
Influence of Strain on P Atomic-Layer Doping Characteristics in Strained Si_0.3Ge_0.7/Si(100) Heterostructures International-presentation

Y. Chiba, M. Sakuraba, B. Tillack, J. Murota

5th Int. SiGe Technology and Device Meeting (ISTDM2010)　2010/05/24
Fabrication of High-Ge-Fraction Strained Si_1-xGe_x/Si Hole Resonant Tunneling Diode Using Low-Temperature Si₂H₆ Reaction for Nanometer-Order Ultrathin Si Barriers International-presentation

K. Takahashi, M. Sakuraba, J. Murota

5th Int. SiGe Technology and Device Meeting (ISTDM2010)　2010/05/24
Effects of 193 nm Excimer laser radiation on SiO₂/Si/SiGe heterostructures grown on s-SOI substrates International-presentation

S. Chiussi, J.C. Conde, A. Benedetti, C. Serra, M. Sakuraba, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.I-11, pp.65-66
Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing International-presentation

M. Sakuraba, T. Nosaka, K. Sugawara, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.I-13, pp.69-70
Adsorption and Desorption of Hydrogen on Si(100) in H₂ or Ar Heat Treatment International-presentation

A. Uto, M. Sakuraba, M. Caymax, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.P-04, pp.25-26
Mobility Enhancement by Highly Strained Si on Relaxed Ge(100) Buffer Grown by Plasma CVD International-presentation

K. Sugawara, M. Sakuraba, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.P-11, pp.39-40
Heavy P Atomic-Layer Doping between Si and Si_0.3Ge_0.7(100) by Ultraclean Low Pressure CVD International-presentation

Y. Chiba, M. Sakuraba, B. Tillack, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.P-19, pp.55-56
Evaluation of Valence Band Offsets for SiO₂/Si/SiGe_0.5/Si Heterostructures Using by X-ray Photoelectron Spectroscopy International-presentation

A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.P-20, pp.57-58
Effect of Heavy Carbon Atomic-Layer Doping upon Intermixing and Strain at Si_1-xGe_x/Si(100) Heterointerface International-presentation

T. Hirano, M. Sakuraba, B. Tillack, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.P-21, pp.59-60
N Atomic-Layer Doping in Si/Si_1-xGe_x/Si(100) Heterostructure Growth by Low-Pressure CVD International-presentation

T. Kawashima, M. Sakuraba, B. Tillack, J. Murota

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2010/01/29

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No.P-22, pp.61-62
Atomically Controlled Processing for Future Si-Based Devices International-presentation

J. Murota, M. Sakuraba

2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2009)　2009/11/29

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Abs.No.O-4, p.22
Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures International-presentation

K. Sugawara, M. Sakuraba, J. Murota

2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2009)　2009/11/29

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Abs.No.P-70, p.131
Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_1-xGe_x Epitaxially Grown on Si(100) International-presentation

M. Sakuraba, J. Murota

2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2009)　2009/11/29

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Abs.No.P-71, p.132
Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors International-presentation

J. Murota, M. Sakuraba, B. Tillack

Symp. E10: ULSI Process Integration 6 (216th Meeting of the Electrochem. Soc.)　2009/10/04

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Abst.No.2360
Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures International-presentation

M. Sakuraba, K. Sugawara, J. Murota

Symp. E10: ULSI Process Integration 6 (216th Meeting of the Electrochem. Soc.)　2009/10/04

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Abst.No.2367
Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_1-xGe_x Epitaxially Grown on Si(100) International-presentation

M. Sakuraba, J. Murota

1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09)　2009/09/20

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No.S4-5, pp.81-82
Atomically Controlled Processing for Group-IV Semiconductors International-presentation

J. Murota, M. Sakuraba

2009 Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT)　2009/07/05
Electrical Characteristics of B-Doped Highly Strained Si Films Epitaxially Grown on Ge(100) Formed by Plasma CVD International-presentation

K. Sugawara, M. Sakuraba, J. Murota

6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6)　2009/05/17

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No.3B.3
Heavy Nitrogen Atomic-Layer Doping of Si_1-xGe_x Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD International-presentation

T. Kawashima, M. Sakuraba, B. Tillack, J. Murota

6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6)　2009/05/17

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No.3B.4
Heavily B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma International-presentation

T. Nosaka, M. Sakuraba, B. Tillack, J. Murota

6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6)　2009/05/17

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No.1P.11
Heavy Carbon Atomic-Layer Doping at Si_1-xGe_x/Si Heterointerface International-presentation

T. Hirano, M. Sakuraba, B. Tillack, J. Murota

6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6)　2009/05/17

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No.3P.3
Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic-Layer Doping of Strained Si_1-xGe_x International-presentation

Y. Chiba, M. Sakuraba, B. Tillack, J. Murota

6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6)　2009/05/17

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No.3P.8
Atomically Controlled Processing in Si-Based CVD Epitaxial Growth International-presentation

J. Murota, M. Sakuraba, B. Tillack

Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)　2008/12/09
Nitrogen Atomic-Layer Doping in Nanometer-Order Heterostructure of Si/Si_1-xGe_x/Si(100) by Ultraclean Low-Pressure CVD International-presentation

T. Kawashima, M. Sakuraba, J. Murota

Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)　2008/12/09
Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron-Resonance Plasma International-presentation

T. Nosaka, M. Sakuraba, J. Murota

Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)　2008/12/09
Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100) International-presentation

K. Sugawara, M. Sakuraba, J. Murota

Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)　2008/12/09
Atomically Controlled CVD Processing for Future Si-Based Devices International-presentation

J. Murota, M. Sakuraba, B. Tillack

9th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2008)　2008/10/20
Application of Relaxed Ge/Si(100) by ECR Plasma CVD to Highly Strained B Doped Si International-presentation

K. Sugawara, M. Sakuraba, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
P Atomic-Layer Doping in Heteroepitaxial Growth of Si on Strained Si_1-xGe_x/Si(100) by Ultraclean Low-Pressure CVD International-presentation

Y. Chiba, M. Sakuraba, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
Formation of Nitrogen Atomic-Layer Doped Si/Si_1-xGe_x/Si(100) Epitaxially Grown by Ultraclean Low-Pressure CVD International-presentation

T. Kawashima, M. Sakuraba, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
Epitaxial Growth of B Atomic-Layer Doped Si Film on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma International-presentation

T. Nosaka, M. Sakuraba, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si/Strained Si1-xGex/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200 K International-presentation

K. Takahashi, T. Seo, M. Sakuraba, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
Heat-Treatment Effect upon H-Terminated Structure Formed on Wet-Cleaned Si(100) and Ge(100) International-presentation

A. Uto, M. Sakuraba, M. Caymax, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
Transient Charge-Pumping Characteristics in SiGe/Si-Hetero-Channel MOSFETs International-presentation

T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction International-presentation

M. Sakuraba, R. Ito, T. Seo, J. Murota

4th Int. Workshop on New Group IV Semiconductor Nanoelectronics　2008/09/25
Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth International-presentation

J. Murota, M. Sakuraba, B. Tillack

8th Int. Conf. on Atomic Layer Deposition (ALD 2008)　2008/06/29
Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs International-presentation

T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota

4th Int. SiGe Technology and Device Meeting (ISTDM2008)　2008/05/11
Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_1-xGe_x/Si(100) Heterostructure International-presentation

T. Seo, K. Takahashi, M. Sakuraba, J. Murota

4th Int. SiGe Technology and Device Meeting (ISTDM2008)　2008/05/11
Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System International-presentation

H. Tanno, M. Sakuraba, B. Tillack, J. Murota

4th Int. SiGe Technology and Device Meeting (ISTDM2008)　2008/05/11
Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H₂ or Ar International-presentation

A. Uto, M. Sakuraba, M. Caymax, J. Murota

4th Int. SiGe Technology and Device Meeting (ISTDM2008)　2008/05/11
Behavior of N Atoms on Atomic-Order Nitrided Si_0.5Ge_0.5(100) International-presentation

N. Akiyama, M. Sakuraba, B. Tillack, J. Murota

5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)　2007/11/12
Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition International-presentation

H. Tanno, M. Sakuraba, B. Tillack, J. Murota

5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)　2007/11/12
Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_1-xGe_x/Si(100) Heterostructure International-presentation

T. Seo, M. Sakuraba, J. Murota

5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)　2007/11/12
Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System International-presentation

T. Yokogawa, K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii, H. Kurokawa

5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)　2007/11/12
Instability of a SiGe/Si-hetereo-interface in hetero-channel MOSFETs due to Joule heating International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2007/11/08
Characterization of B Incorporation in B Atomic Layer Doping at Si/Ge(100) Heterointerface International-presentation

T. Yokogawa, K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii, H. Kurokawa

3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2007/11/08
Heat-Treatment Effect on Structure of Atomic-Order Nitrided Si_0.5Ge_0.5(100) Using Low Pressure CVD International-presentation

N. Akiyama, M. Sakuraba, B. Tillack, J. Murota

3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2007/11/08
Effect of Low-Temperature SiH₄ Exposure on Heavily Atomic-Layer Doping of B in Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure CVD International-presentation

H. Tanno, M. Sakuraba, B. Tillack, J. Murota

3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2007/11/08
Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0.4) Si/Strained Si_1-xGe_x/Si(100) Heterostructure International-presentation

T. Seo, M. Sakuraba, J. Murota

3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2007/11/08
Strain Control of Si and Si_1-xGe_x Layers in the Si/Si_1-xGe_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices International-presentation

J. Murota, J. Uhm, M. Sakuraba

Symp. E9: ULSI Process Integration 5 (The Electrochem. Soc.)　2007/10/07
Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_1-x"DRGe#Dx Epitaxially Grown on Si(100) International-presentation

M. Sakuraba, R. Ito, T. Seo, J. Murota

Symp. E9: ULSI Process Integration 5 (The Electrochem. Soc.)　2007/10/07
Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (Invited Paper) International-presentation

M. Sakuraba, D. Muto, M. Mori, K. Sugawara, J. Murota

5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)　2007/05/20
High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth International-presentation

S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota

5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)　2007/05/20
Local Strain in Si/Si_0.6Ge_0.4/Si(100) Heterostructures by Stripe-Shape Patterning International-presentation

J. Uhm, M. Sakuraba, J. Murota

5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)　2007/05/20
Si Epitaxial Growth on Self-Limitedly B Adsorbed Si_1-xGe_x(100) by Ultraclean Low-Pressure CVD System International-presentation

K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii, H. Kurokawa

5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)　2007/05/20
Structural Change of Atomic-Order Nitride Formed on Si_1-xGe_x(100) and Ge(100) by Heat Treatment International-presentation

N. Akiyama, M. Sakuraba, B. Tillack, J. Murota

5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)　2007/05/20
Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_1-xGe_x/Si(100) Heterostructure International-presentation

T. Seo, M. Sakuraba, J. Murota

5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)　2007/05/20
Reliability and Instability of a SiGe/Si-Hetero-Interface in Hetero-Channel MOSFETs (Invited Paper) International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)　2007/05/20
Atomically Controlled Technology for Group IV Semiconductors (Invited Paper) International-presentation

J. Murota, M. Sakuraba, B. Tillack

4th Int. Workshop on Nanoscale Semiconductor Devices　2007/04/05
The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress International-presentation

37th IEEE Semiconductor Interface Specialists Conf. (IEEE SISC 2006)　2006/12/07
Atomic-Order Thermal Nitridation of Si_1-xGe_x(100) at Low Temperatures by NH₃ International-presentation

N. Akiyama, M. Sakuraba, J. Murota

2nd Int. SiGe & Ge: Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting)　2006/10/29

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Paper No.20.4: ECS Trans., Vol.3, No.7, SiGe and Ge: Materials, Processing, and Devices (Edited by D. Harame, J. Boquet, J. Cressler, K. Rim, B. Tillack, M. Caymax, G. Masini, A. Reznicek, S. Koester, S. Zaima, The Electrochem. Soc., Pennington, NJ, 2006), pp.1205-1210 (2006).
A Study on B Atomic Layer Formation for B-Doped Si_1-xGe_x(100) Epitaxial Growth Using Ultraclean LPCVD System International-presentation

K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii, H. Kurokawa

2nd Int. SiGe & Ge: Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting)　2006/10/29

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Paper No.14.4: ECS Trans., Vol.3, No.7, SiGe and Ge: Materials, Processing, and Devices (Edited by D. Harame, J. Boquet, J. Cressler, K. Rim, B. Tillack, M. Caymax, G. Masini, A. Reznicek, S. Koester, S. Zaima, The Electrochem. Soc., Pennington, NJ, 2006), pp.861-866 (2006).
Strain Control of Stripe Patterned Si/Si_1-xGe_x/Si Heterostructures International-presentation

J. Uhm, M. Sakuraba, J. Murota

2nd Int. SiGe & Ge: Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting)　2006/10/29

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Paper No.6.3: ECS Trans., Vol.3, No.7, SiGe and Ge: Materials, Processing, and Devices (Edited by D. Harame, J. Boquet, J. Cressler, K. Rim, B. Tillack, M. Caymax, G. Masini, A. Reznicek, S. Koester, S. Zaima, The Electrochem. Soc., Pennington, NJ, 2006), pp.421-427 (2006).
Atomically Controlled CVD Technology for Group IV Semiconductors (Invited Paper) International-presentation

8th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2006)　2006/10/23

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No.B3.2, pp.440-443.
Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_1-xGe_x Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD International-presentation

T. Seo, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No.P-29.
Thermal Stability of Nitrided Si Atomic Layer on Ge(100) Using Low Pressure CVD International-presentation

N. Akiyama, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No.P-28.
P atomic Layer Doping at Heterointerface of Epitaxial Si Layer and Si1-xGex(100) Substrate by Alternate Surface Reaction of PH₃ and Si₂H₆ in Ultraclean LPCVD International-presentation

Y. Chiba, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No.P-27.
Highly Strained-Si/Relaxed-Ge Epitaxial Growth on Si(100) by ECR Plasma CVD and Evaluation of Thermal Stability International-presentation

K. Sugawara, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No.P-17.
B Atomic Layer Formation on Si_1-xGe_x(100) by Ultraclean LPCVD System International-presentation

K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii, H. Kurokawa

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No.P-16.
Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Source/Drain International-presentation

S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No.P-02.
Strain and Conductivity Behavior of Stripe Patterned Si/Si_1-xGe_x/Si(100) Heterostructures International-presentation

J. Uhm, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No.P-01.
Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD International-presentation

M. Sakuraba, D. Muto, M Mori, K. Sugawara, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No. O-09.
Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics　2006/10/02

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No. O-01.
Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices (Invited Paper) International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Sendai, Japan, Jul. 3-5, 2006, (IEICE Technical Report, The Institute of Electronics, Information and Communication Engineers)　2006/07/03

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ED2006-61, SDM2006-69 (2006-7), pp.21-24.
Atomically Controlled Processing for Future Si-Based Devices International-presentation

J. Murota, M. Sakuraba, B. Tillack

2006 Advanced Research Workshop on “Future Trends in Microelectronics (FTM-5): Up the Nano Creek"　2006/06/26
Atomic-Order Si Nitride Formation on Ge(100) by Low-Pressure Chemical Vapor Deposition International-presentation

N. Kanai, N. Akiyama, M. Sakuraba, J. Murota

Symp. L: Characterization of High-K Dielectric Materials, E-MRS 2006 Spring Meeting (IUMRS-ICEM 06)　2006/05/29

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Paper No.L-8b.
Strain Control and Electrical Properties of Stripe Patterned Si/Si_1-xGe_x/Si(100) Heterostructures International-presentation

J. Uhm, M. Sakuraba, J. Murota

3rd Int. SiGe Technol. and Device Meeting (ISTDM 2006)　2006/05/15

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Paper No.13B.4.
Epitaxial Growth of P Atomic Layer Doped Si Film by Alternate Surface Reaction of PH₃ and Si₂H₆ on Strained Si_1-xGe_x/Si(100) in Ultraclean Low Pressure CVD International-presentation

Y. Chiba, M. Sakuraba, J. Murota

3rd Int. SiGe Technol. and Device Meeting (ISTDM 2006)　2006/05/15

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Paper No.5P.27.
Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si(100) Using ECR Plasma CVD without Substrate Heating International-presentation

K. Sugawara, M. Sakuraba, J. Murota

3rd Int. SiGe Technol. and Device Meeting (ISTDM 2006)　2006/05/15

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Paper No.5P.26.
Hole Tunneling Properties in Resonant Tunneling Diodes with Si/Strained Si_0.8Ge_0.2 Heterostructures Grown on Si(100) by Low-Temperature Ultraclean LPCVD International-presentation

R. Ito, M. Sakuraba, J. Murota

3rd Int. SiGe Technol. and Device Meeting (ISTDM 2006)　2006/05/15

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Paper No.5P.25.
Carbon Doping Effect on Strain Relaxation during Si_1-x-yGe_xC_y Epitaxial Growth on Si(100) at 500 ^oC International-presentation

H. Nitta, M. Sakuraba, J. Murota

3rd Int. SiGe Technol. and Device Meeting (ISTDM 2006)　2006/05/15

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Paper No.5P.24.
Silicon Self-Diffusion in Heavily B-Doped Si Using Highly Pure ³⁰Si Epitaxial Layer International-presentation

S. Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, T. Abe

Silicon Materials Science and Technology X, The Electrochem. Soc. Spring Meeting　2006/05/07

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Abs.No. 528.
Quantitative Evaluation of the Interface Trap Density in Nanometer-Thick SiGe/Si Heterostructures by Low-Temperature Charge-Pumping Technique (Invited Paper) International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

13th Int. Workshop on The Physics of Semiconductor Devices (IWPSD-2005)　2005/12/13
Experimental Estimation of the Width of the Hot-Carrier-Degraded Region and the Density of Locally-Generated Hetero-Interface Traps in a SiGe/Si Heterostructure International-presentation

T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota

36th IEEE Semiconductor Interface Specialist Conf. (IEEE SISC 2005)　2005/12/01

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Paper No.7.4.
Carbon Doping Effect on Strained Si_1-xGe_x Epitaxial Growth on Si(100) International-presentation

H. Nitta, J. Tanabe, M. Sakuraba, J. Murota

1st Int. Workshop on New Group IV Semiconductor Nanoelectronics　2005/05/27

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No.P-21
Strain Relaxation by Heat Treatment in Epitaxial Ge Films on Si(100) Using ECR Plasma CVD International-presentation

K. Sugawara, M. Sakuraba, J. Murota

1st Int. Workshop on New Group IV Semiconductor Nanoelectronics　2005/05/27

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No.P-20
Si Epitaxial Growth Using Si₂H#6_{R on PH#D3} Reacted Si1-xGex(100) by Ultraclean Low Pressure CVD International-presentation

K. Sugawara, M. Sakuraba, J. Murota

1st Int. Workshop on New Group IV Semiconductor Nanoelectronics　2005/05/27

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No.P-19
Line-Shape Patterning Effect on Strain in Si/Si_1-xGe_x/Si(100) Heterostructures International-presentation

J. Uhm, M. Sakuraba, J. Murota

1st Int. Workshop on New Group IV Semiconductor Nanoelectronics　2005/05/27

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No.P-18
Photo Detection Characteristics of Si_1-xGe_x/Si p-i-n Diode Integrated with Optical Waveguides International-presentation

A. Yamada, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Surface Reaction and B Atom Segregation in ECR Chlorine Plasma Etching of B-Doped Si_1-xGe_x Epitaxial Films International-presentation

H.-S. Cho, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Strain Relaxation by Line-Shape Patterning in Si/Si_1-xGe_x/Si(100) Heterostructures International-presentation

J. Uhm, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Thermal Effect on Strain Relaxation in Ge Films Epitaxially Grown on Si(100) Using ECR Plasma CVD International-presentation

K. Sugawara, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Effect of Grain Boundary on Electrical Characteristics in B- and P-doped Polycrystalline Si_1-x-yGe_xC_y Film Deposited by Ultraclean LPCVD International-presentation

H. Shim, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Plasma Enhanced Surface Reaction of CH₄ on Si(100) and Subsequent Si Epitaxial Growth Using Ultraclean ECR Plasma CVD International-presentation

Y. Noji, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Carbon Effect on Strain Compensation in Si_1-x-yGe_xC_y Films Epitaxially Grown on Si(100) International-presentation

H. Nitta, J. Tanabe, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
P Atomic Layer Formation on Si_1-xGe_x(100) and Subsequent Si Epitaxy Using Si₂H₆ by Ultraclean Low Pressure CVD International-presentation

Y. Chiba, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4)　2005/05/23
Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, B. Tillack

Int. Symp. ULSI Process Integration IV, Spring Meeting of The Electrochem. Soc.　2005/05/15
Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials using Isotopically Enriched Single- or Multi-³⁰Si Epitaxial Layers (Invited Paper) International-presentation

S. Matsumoto, S. Seto, S. Aid, T. Sakaguchi, Y. Nakabayashi, K. Toyonaga, Y. Shimamune, Y. Hashiba, M. Sakuraba, J. Murota, K. Wada, T. Abe

2005 Mat. Res. Soc. Spring Meeting, Symp.E: “Semiconductor Defect Engineering - Materials, Synthetic Structures, and Devices　2005/03/28
Direct Measurements of Trap Density in a SiGe/Si Hetero Interface by New Charge-Pumping Technique (Invited Paper) International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

2005 Mat. Res. Soc. Spring Meeting, Symp.E: “Semiconductor Defect Engineering - Materials, Synthetic Structures, and Devices　2005/03/28
Atomically Controlled Impurity Doping for Future Si-Based Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, B. Tillack

2004 Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT)　2004/10/18
Hetero-Interface Traps and Hot Carrier Reliability of SiGe/Si Heterostructure and Low Frequency Noise in SiGe-Channel pMOSFETs International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Novel SOI Fabrication Process Utilizing the Selective Etching for Si/SiGe Stacked Layers: Separation by Bonding Si Islands Technology (SBSI) International-presentation

S. Ohmi, H. Ohri, T. Yamazaki, M. Sakuraba, J. Murota, T. Sakai

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
High Performance Strained SiGe Channel pMOSFETs with Selective CVD B-Doped SiGe Source/Drain Electrode International-presentation

S. Takehiro, D. Lee, M. Sakuraba, J. Murota, T. Tsuchiya

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Epitaxial Growth of N Delta Doped Si Films on Si(100) by ECR Plasma CVD Using N₂ and SiH₄ International-presentation

M. Mori, T. Seino, D. Muto, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Epitaxial Growth and Electrical Properties of N Atomic Layer Doped Si Films on Si(100) by Ultraclean LPCVD International-presentation

Y. Jeong, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Epitaxial Growth and Electrical Properties of W Delta Doped Si Films on Si(100) by Ultraclean LPCVD International-presentation

T. Komatsu, T. Kurosawa, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Thermal Stability of Si/Si_1-xGe_x/Si Heterointerface with C Atomic Order Doping Using Ultraclean LPCVD International-presentation

K. Takahashi, T. Kobayashi, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Epitaxial Growth of Strained Ge Film on Si(100) by ECR Plasma CVD Using GeH₄ Gas International-presentation

K. Sugawara, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Light Emission and Photo Detection Using Si p-i-n Diodes Integrated with Optical Waveguides International-presentation

A. Yamada, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Electrical Properties of Impurity-doped Polycrystalline Si_1-x-yGe_xC_y Film Deposited on SiO₂ by Ultraclean LPCVD International-presentation

H. Shim, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Sidewall Protection by Nitrogen in Anisotropic Etching of P-Doped Poly-Si_1-xGe_x Using Cl₂/N₂/SiCl₄ Plasma International-presentation

H.-S. Cho, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
Etching Characteristics of B-Doped Si_1-xGe_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma International-presentation

H.-S. Cho, M. Sakuraba, J. Murota

3rd Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors (Si-Ge-C Workshop)　2004/10/12
C Atomic Order Doping at Si/Si_1-x#RGe#Dx/Si Heterointerface and Improvement of Thermal Stability International-presentation

K. Takahashi, T. Kobayashi, M. Sakuraba, J. Murota

SiGe: Materials Processing and Device, The Electrochem. Soc. Fall Meeting　2004/10/03

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Abs.No.1373.
Electrical Properties of B-doped Polycrystalline Si_1-x-yGe_xC_y Film Deposited by Ultraclean Low-pressure CVD International-presentation

H. Shim, M. Sakuraba, J. Murota

SiGe: Materials Processing and Device, The Electrochem. Soc. Fall Meeting　2004/10/03

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Abs.No.1309.
Sidewall Protection by Nitrogen in Anisotropic Etching of P-doped Poly-Si_1-xGe_x International-presentation

H.-S. Cho, S. Takehiro, M. Sakuraba, J. Murota

SiGe: Materials Processing and Device, The Electrochem. Soc. Fall Meeting　2004/10/03

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Abs.No.1307.
Propagation Characteristics of Si Nitride Optical Waveguide Integrated with Si p-i-n Diodes for Light Emitter and Detector International-presentation

A. Yamada, M. Sakuraba, J. Murota

1st Int. Conf. Group IV Photonics　2004/09/29

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Abs.No.FA2.
Atomically Controlled Processing for High-Performance Si-Based Devices International-presentation

J. Murota, M. Sakuraba

Tohoku-Cambridge Forum　2004/06/10
Separation by Bonding Si Island (SBSI) for LSI Applications International-presentation

T. Sakai, T. Yamazaki, S. Ohmi, S. Morita, H. Ohri, J. Murota, M. Sakuraba, H. Omi, Y. Takahashi

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Sidewall Protection by Nitrogen and Oxygen in Poly-Si_1-xGe_x Anisotropic Etching Using Cl₂/N₂/O₂ Plasma International-presentation

H.-S. Cho, S. Takehiro, M. Sakuraba, J. Murota

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma International-presentation

M. Mori, T. Seino, D. Muto, M. Sakuraba, J. Murota

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition International-presentation

Y. Jeong, M. Sakuraba, J. Murota

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Electrical Properties of W Delta Doped Si Epitaxial Films Grown on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition International-presentation

T. Kurosawa, T. Komatsu, M. Sakuraba, J. Murota

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Integration of Light Emitter and Detector Using Si p-i-n Diodes with Optical Waveguides International-presentation

A. Yamada, M. Sakuraba, J. Murota

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Atomically Controlled Ge Epitaxial Growth on Si(100) in Ar Plasma Enhanced GeH₄ Reaction International-presentation

K. Sugawara, M. Sakuraba, J. Murota

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Hot Carrier Reliability of SiGe/Si-Hetero-MOSFETs (Invited Paper) International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

2nd Int. SiGe Technol. & Device Meeting (ISTDM 2004)　2004/05/16
Hot Carrier Reliability of a SiGe/Si Hetero-Interface in SiGe MOSFETs International-presentation

T. Tsuchiya, M. Sakuraba, J. Murota

IEEE Int. Reliability Physics Symp. (IRPS)　2004/04/25
Atomically Controlled Processing for Future Si-Based Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, S. Takehiro

2004 IEEE Workshop on Microelectronics and Electron Devices (WMED)　2004/04/16
Atomically Controlled Impurity Doping in Si-Based CVD Epitaxial Growth (Invited Paper) International-presentation

J. Murota, M. Sakuraba, B. Tillack

2004 Mat. Res. Soc. Spring Meeting, Symp. B: High-Mobility Group-IV Materials and Devices　2004/04/12
Formation of Stress Free Silicon Nitride Films by Silane Reaction and Nitridation under ECR Nitrogen Plasma Irradiation International-presentation

M, Saito, M. Sakuraba, J. Murota

7th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7)　2003/11/17

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Abs.No.20C55, https://doi.org/10.13140/RG.2.1.3317.2641
Atomically Controlled Technology for Future Si-Based Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, B.Tillack

10th Int. Autumn Meeting on Gettering and Defect Eng. in Semiconductor Technol. (GADEST 2003)　2003/09/21
Atomically Controlled Processing for SiGe-Based Ultimate-Small Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, S. Takehiro

22nd Electronic Materials Symp. (EMS-22)　2003/07/02
Atomically Controlled Epitaxial Growth for Future Si-Based Devices International-presentation

J. Murota, M. Sakuraba, B. Tillack

2003 Advanced Research Workshop, “Future Trends in Microelectronics: The Nano, the Giga, the Ultra, and the Bio”　2003/06/23
Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD International-presentation

S. Takehiro, D. Lee, M. Sakuraba, J. Murota, T. Tsuchiya

3rd Int. Conf. SiGe(C) Epitaxy and Heterostructures (ICSI3)　2003/03/09
Atomically Controlled Silane Reaction on Si(100) Using Ar Plasma Irradiation without Substrate Heating International-presentation

D. Muto, M. Sakuraba, T. Seino, J. Murota

3rd Int. Conf. SiGe(C) Epitaxy and Heterostructures (ICSI3)　2003/03/09
Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth International-presentation

D. Muto, M. Sakuraba, T. Seino, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100) International-presentation

M. Fujiu, K. Takahashi, M. Sakuraba, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique International-presentation

Y. Shimamune, M. Sakuraba, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH₃ and SiH₄ International-presentation

Y. Jeong, M. Sakuraba, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Si Self-Diffusion in Heavily B-Doped Epitaxial Silicon International-presentation

K. Toyonaga, S. Rahamah, Bt Aid, Y. Nakabayashi, S. Matsumoto, M. Sakuraba, Y. Shimada, A. Hashiba, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Etching Characteristics of Impurity-Doped Si_1-xGe_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma International-presentation

H.-S. Cho, S. Takehiro, M. Sakuraba, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Relationship between Total Impurity (B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment International-presentation

J. Noh, S. Takehiro, M. Sakuraba, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
A Proposal of Multi-Layer Channel MOSFET: The Application of Selective Etching for Si/SiGe Stacked Layers International-presentation

T. Sakai, S. Ohmi, D. Sasaki, M. Sakuraba, J. Murota

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Fabrication of 0.12-µm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD International-presentation

D. Lee, S. Takehiro, M. Sakuraba, J. Murota, T. Tsuchiya

1st Int. SiGe Technol. & Device Meeting (ISTDM 2003)　2003/01/15
Atomically Controlled Si Epitaxial Growth in Ar Plasma Enhanced Silane Reaction International-presentation

D. Muto, M. Sakuraba, T. Seino, J. Murota

4th Int. Symp. Control of Semiconductor Interfaces (ISCSI-4)　2002/10/21

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Abs.No.P4-2.
0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers International-presentation

D. Lee, M. Sakuraba, J. Murota, T. Tsuchiya

2002 Int. Conf. Solid State Devices and Materials (SSDM 2002)　2002/09/17
SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba

2nd Int. ECS Semiconductor Technol. Conf. (ISTC), The Electrochem. Soc.　2002/09/11

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Abs.No.53.
Atomically Controlled Heterostructure Growth of Group IV Semiconductors International-presentation

J. Murota, M. Sakuraba

3rd “Trends in NanoTechnology” Int. Conf. (TNT2002)　2002/09/09
Electrical Properties of Impurity-Doped Polycrystalline Si_1-x-yGe_xC#Dy Films Using Ultraclean Low-Pressure CVD International-presentation

H. Shim, M. Sakuraba, T. Tsuchiya, J. Murota

11th Int. Conf. Solid Films and Surfaces (ICSFS)　2002/07/08
Contact Resistivity between Tungsten and Impurity(P and B)-Doped Si_1-x-yGe_xC_y Epitaxial Layer International-presentation

J. Noh, M. Sakuraba, J. Murota, S. Zaima, Y. Yasuda

11th Int. Conf. Solid Films and Surfaces (ICSFS)　2002/07/08
Si Epitaxial Growth on Monomethylsilane Reacted Ge(100) and Suppression of Si/Ge Interdiffusion International-presentation

K. Takahashi, M. Fujiu, M. Sakuraba, J. Murota

11th Int. Conf. Solid Films and Surfaces (ICSFS)　2002/07/08
W Delta Doping in Si(100) Using Ultraclean Low-Pressure CVD International-presentation

T. Kanaya, M. Sakuraba, J. Murota

11th Int. Conf. Solid Films and Surfaces (ICSFS)　2002/07/08
Atomic-Layer Doping of Boron in Si(100) by Ultraclean Low-Pressure CVD International-presentation

M. Nomura, M. Sakuraba, J. Murota

11th Int. Conf. Solid Films and Surfaces (ICSFS)　2002/07/08
Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si(100) to SiH₄ and to Ar Plasma International-presentation

M. Sakuraba, D. Muto, T. Seino, J. Murota

11th Int. Conf. Solid Films and Surfaces (ICSFS)　2002/07/08
SiGe-Channel 0.1-μm pMOSFETs with Super Self-Aligned Ultra-Shallow Junction Formed by Selective In-Situ B-Doped SiGe CVD International-presentation

D. Lee, M. Sakuraba, T. Matsuura, J. Murota, T. Tsuchiya

60th Annual Device Res. Conf. (DRC)　2002/06/24
Double-Polysilicon Self-Aligned HBT with Non-Selective Epitaxial SiGe:C Base Layer International-presentation

T. Yamazaki, S. Ohmi, M. Sakuraba, J. Murota, T. Sakai

2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2002/06/02

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Abs.No.VIII-06.
Fabrication of 0.1 μm SiGe-Channel pMOSFETs with In-Situ B-Doped SiGe Source/Drain International-presentation

D. Lee, M. Sakuraba, T. Tsuchiya, J. Murota

2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2002/06/02

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Abs.No.VIII-05.
Side-Wall Protection by B in Poly-Si and Si_1-xGe_x in Gate Etching International-presentation

H.-S. Cho, T. Seino, A. Fukuchi, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2002/06/02

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Abs.No.VI-05.
Boron Atomic-Layer Doping in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low- Pressure Chemical Vapor Deposition International-presentation

M. Nomura, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2002/06/02

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Abs.No.VI-09.
Contact Resistivity between W and Heavily Doped Si_1-x-yGe_xC_y Epitaxial Film International-presentation

J. Noh, M. Sakuraba, J. Murota, S. Zaima, Y. Yasuda

2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2002/06/02

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Abs.No.VI-07.
Si Epitaxial Growth on SiH₃CH₃ Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment International-presentation

K. Takahashi, M. Fujiu, M. Sakuraba, J. Murota

2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2002/06/02

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Abs.No.IV-12.
Work Function of Impurity-Doped Poly-Si_1-x-yGe_xC_y Film Deposited by Ultraclean Low-Pressure CVD International-presentation

H. Shim, M. Sakuraba, T. Tsuchiya, J. Murota

2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2002/06/02

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Abs.No.IV-10.
Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma International-presentation

M. Mori, T. Seino, D. Muto, M. Sakuraba, T. Matsuura, J. Murota

The Electrochem. Soc. Spring Meeting　2002/05/12

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Abs.No.402.
Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and Its Thermal Stability International-presentation

Y. Jeong, M. Sakuraba, T. Matsuura, J. Murota

9th Int. Symp. Silicon Materials Sci. & Technol., The Electrochem. Soc. Spring Meeting　2002/05/12

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Abs.No.574.
Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH₄ Reaction International-presentation

Y. Jeong, M. Sakuraba, T. Matsuura, J. Murota

6th Symp. Atomic-Scale Surface and Interface Dynamics (The Japan Soc. for the Promotion of Sci.)　2002/03/01
Atomically Controlled Processing for Group IV Semiconductors International-presentation

J. Murota, T. Matsuura, M. Sakuraba

6th Symp. Atomic-Scale Surface and Interface Dynamics (The Japan Soc. for the Promotion of Sci.)　2002/03/01
Heavy Doping Characteristics of Si Films Epitaxially Grown at 450^oC by Alternately Supplied PH₃ and SiH₄

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

2001 Int. Conf. Rapid Thermal Processing for Future Semiconductor Devices (RTP2001)　2001/11/14
Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH₄ Reaction

Y. Jeong, M. Sakuraba, T. Matsuura, J. Murota

2001 Int. Conf. Rapid Thermal Processing for Future Semiconductor Devices (RTP2001)　2001/11/14
Growth Characteristics of Si_1-x-yGe_xC_y on Si(100) and SiO₂ in Ultraclean Low-Temperature LPCVD International-presentation

Y. Hashiba, M. Sakuraba, T. Matsuura, J. Murota

48th American Vac. Soc. Int. Symp.　2001/10/29

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SS-SC-TuP2.
CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, T. Matsuura

6th Int. Conf. Solid-State and Integrated-Circuit Technol. (ICSICT)　2001/10/22
Thermal Nitridation of Ultrathin SiO₂ on Si by NH₃ International-presentation

O. Jintsugawa, M. Sakuraba, T. Matsuura, J. Murota

9th Euro. Conf. Applications of Surface and Interface Analysis (ECASIA)　2001/09/30

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Abs.No.MO-P-MOE 08.
Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture) International-presentation

J. Murota, T. Matsuura, M. Sakuraba

9th Euro. Conf. Applications of Surface and Interface Analysis (ECASIA)　2001/09/30

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Abs.No.MO-KL-MOE.
Epitaxial Growth of Heavily P-Doped Si Films at 450^oC by Alternately Supplied PH₃ and SiH₄ International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

13th Euro. Conf. Chemical Vapor Deposition (EUROCVD)　2001/08/26
Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices International-presentation

J. Murota, T. Matsuura, M. Sakuraba

2001 Advanced Research Workshop, “Future Trends in Microelectronics: The Nano Millennium”　2001/06/25
Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_1-xGe_x International-presentation

T. Yamashiro, M. Sakuraba, T. Matsuura, J. Murota, T. Tsuchiya

2nd Int. Conf. Silicon Epitaxy and Heterostructures (ICSi2), Symp. D, 2001 Euro. Mat. Res. Soc. Spring Meeting　2001/06/05

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Abs.No.D-V/P20.
Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100) International-presentation

M. Fujiu, M. Sakuraba, T. Matsuura, J. Murota

2nd Int. Conf. Silicon Epitaxy and Heterostructures (ICSi2), Symp. D, 2001 Euro. Mat. Res. Soc. Spring Meeting　2001/06/05

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Abs.No.D-VIII/P9.
Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450^oC by Alternately Supplied PH₃ and SiH₄ International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

2nd Int. Conf. Silicon Epitaxy and Heterostructures (ICSi2), Symp. D, 2001 Euro. Mat. Res. Soc. Spring Meeting　2001/06/05

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Abs.No.D-X.3.
Thermal Nitridation of Ultrathin Silicon Dioxide Films at 750-850^oC in an NH₃ Environment International-presentation

O. Jintsugawa, M. Sakuraba, T. Matsuura, J. Murota

1st Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2001/01/21

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Abs.No.PVI-20.
Self-Limiting Surface Reaction of SiH₄ and CH₃SiH₃ on Ge(100) International-presentation

M. Fujiu, M. Sakuraba, T. Matsuura, J. Murota

1st Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2001/01/21

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Abs.No.PVI-19.
B- and P-Doped SiGe(C) Epitaxial Growth on Si(100) by Ultraclean LPCVD International-presentation

T. Noda, D. Lee, H. Shim, M. Sakuraba, T. Matsuura, J. Murota

1st Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2001/01/21

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Abs.No.PIV-08.
Heavy Doping Characteristics in Si Epitaxial Growth at 450^oC by Alternate Supplies of PH₃ and SiH₄ International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

1st Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2001/01/21

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Abs.No.PII-12.
Fabrication of 0.1µm MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_1-xGe_x CVD International-presentation

T. Yamashiro, M. Sakuraba, T. Matsuura, J. Murota, T. Tsuchiya

1st Int. WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop)　2001/01/21

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Abs.No.PII-07.
Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_1-x-yGe_xC_y on Si (100) by Ultraclean LPCVD International-presentation

D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration　2000/11/19
Very Low-Resistive Si Epitaxial Growth at 450#Uo#UC by Alternately Supplied PH₃ and SiH₄ International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration　2000/11/19
Surface Reaction of Silane and Methylsilane on Ge (100) International-presentation

M. Fujiu, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration　2000/11/19
Nitrogen-Doped Si Epitaxial Growth by Alternately Supplied NH₃ and SiH₄ International-presentation

T. Watanabe, Y. Jeong, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration　2000/11/19
Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH₃ Gas International-presentation

O. Jintsugawa, M. Sakuraba, T. Matsuura, J. Murota

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration　2000/11/19
Atomically Controlled Processing for Fabrication of Si-Based Ultimate-Small Devices International-presentation

J. Murota, T. Matsuura, M. Sakuraba

Workshop on Selective and Functional Film Deposition Technol. as Applied to ULSI Technol. (29th IUVSTA Workshop) & 2nd Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration　2000/11/19
Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions International-presentation

M. Fujiu, M. Sakuraba, T. Matsuura, J. Murota

47th American Vac. Soc. Int. Symp., Vacuum Thin Films, Surfaces/Interfaces, Processing & NANO-6　2000/10/02

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Abs.No.TF-MoM4.
Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH₃ Gas International-presentation

O. Jintsugawa, M. Sakuraba, T. Matsuura, J. Murota

47th American Vac. Soc. Int. Symp., Vacuum Thin Films, Surfaces/Interfaces, Processing & NANO-6　2000/10/02

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Abs.No.SC1+EL+SS-MoM4.
Atomic-Order Thermal Nitridation of Si(100) and Subsequent Epitaxial Growth of Si International-presentation

T. Watanabe, M. Sakuraba, T. Matsuura, J. Murota

47th American Vac. Soc. Int. Symp., Vacuum Thin Films, Surfaces/Interfaces, Processing & NANO-6　2000/10/02

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Abs.No.SC1+EL+SS-MoM1.
Heavily P-doped Si Films Epitaxially Grown at 450^oC by Alternately Supplied PH₃ and SiH₄ International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

2000 Int. Symp. Formation, Physics and Device Application of Quantum Dot Structures (QDS2000)　2000/10/02

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Abs.No.Tul-4.
In-Situ Impurity Doping in Si_1-x-yGe_xC_y Epitaxial Growth Using Ultraclean LPCVD International-presentation

D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura, J. Murota

2000 Int. Conf. Solid State Devices and Materials (SSDM2000)　2000/08/29
Atomic-Layer Doping in Si by Alternately Supplied PH₃ and SiH₄ International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

2000 Euro. Mat. Res. Soc. Spring Meeting　2000/05/30

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Abs.No.F-IV.3.
Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_1-x-yGe_xC_y Films Epitaxially Grown Using Ultraclean LPCVD International-presentation

T. Noda, D. Lee, H. Shim, M. Sakuraba, T. Matsuura, J. Murota

2000 Euro. Mat. Res. Soc. Spring Meeting　2000/05/30

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Abs.No.F-II.6.
Atomically Controlled Processing for Si-Based Ultrasmall Devices (Invited Paper) International-presentation

J. Murota, T. Matsuura, M. Sakuraba

18th Symp. Future Electron Devices (FED)　1999/10/20
Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_1-xGe_x CVD International-presentation

T. Kikuchi, T. Yamashiro, A. Moriya, T. Noda, Y. Yamamoto, C. Deng, M. Sakuraba, T. Matsuura, J. Murota

1st Int. Symp. ULSI Process Integration, The Electrochem. Soc. Fall Meeting　1999/10/17

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Abs. No.1334.
SiGe Processing and its Application to MOS Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, T. Matsuura

1st Microelectronics Workshop　1999/10/12
CVD Si_1-xGe_x Epitaxial Growth and Its Application to MOS Devices (Invited Paper) International-presentation

J. Murota, M. Sakuraba, T. Matsuura

SPIE Conf. Microelectronic Device Technol. III, The Int. Society for Optical Eng.　1999/09/22
Drain Leakage Current and Instability of Drain Current in Si/Si_1-xGe_x MOSFETs International-presentation

T. Tsuchiya, K. Goto, M. Sakuraba, T. Matsuura, J. Murota

Int. Joint Conf. Si Epitaxy and Heterostructures (IJC-Si)　1999/09/12

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Abs.No.PII-14.
Diffusion and Segregation of Impurities from Doped Si_1-xGe_x Films into Silicon International-presentation

S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, J. Murota

Int. Joint Conf. Si Epitaxy and Heterostructures (IJC-Si)　1999/09/12

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Abs.No.PII-1.
Micro-Roughness Control of the Si_1-xGe_x Surfaces Treated with Buffered Hydrofluoric Acid International-presentation

S. Ishida, T. Osada, M. Miyamoto, M. Sakuraba, T. Matsuura, J. Murota

Int. Joint Conf. Si Epitaxy and Heterostructures (IJC-Si)　1999/09/12

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Abs.No.PI-2.
C Introduced Si_1-xGe_x/Si Resonant Tunneling Diodes Epitaxially Grown Using Low-Temperature Low-Pressure CVD International-presentation

P. Han, M. Sakuraba, Y. Jeong, T. Matsuura, J. Murota

Int. Joint Conf. Si Epitaxy and Heterostructures (IJC-Si)　1999/09/12

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Abs.No.J-4.
Epitaxial Growth of Si_1-x-yGe_xC_y Film on Si(100) in a SiH₄-GeH₄-CH₃SiH₃ Reaction International-presentation

A. Ichikawa, Y. Hirose, T. Ikeda, T. Noda, M. Fujiu, T. Takatsuka, A. Moriya, M. Sakuraba, T. Matsuura, J. Murota

Int. Joint Conf. Si Epitaxy and Heterostructures (IJC-Si)　1999/09/12

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Abs.No.PII-2.
Layer-by-Layer Growth of Silicon Nitride Films by NH₃ and SiH₄ International-presentation

T. Watanabe, M. Sakuraba, T. Matsuura, J. Murota

12th Euro. Conf. Chemical Vapor Deposition (EUROCVD)　1999/09/05
Observation of Sharp Current Peaks in Resonant Tunneling Diode of Strained Si_0.6Ge_0.4/Si(100) Grown by Low-Temperature Low-Pressure CVD International-presentation

P. Han, M. Sakuraba, Y. Jeong, K. Bock, T. Matsuura, J. Murota

7th Int. Conf. Chemical Beam Epitaxy and Related Growth Techniques (ICCBE7)　1999/07/27
Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH₃ Using an Ultraclean Low-Pressure Chemical Vapor Deposition International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

5th Int. Conf. Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)　1999/07/06

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Abs.No.P37.
Atomic-Order Surface Reaction of CH₃SiH₃ on Ge(100) and Si(100) International-presentation

T. Takatsuka, M. Fujiu, M. Sakuraba, T. Matsuura, J. Murota

5th Int. Conf. Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)　1999/07/06

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Abs.No.P20.
High Quality Si_1-xGe_x Epitaxial Growth by CVD (Invited Paper) International-presentation

J. Murota, M. Sakuraba, T. Matsuura

3rd Int. Symp. Defects in Silicon, The Electrochem. Soc. Spring Meeting　1999/05/02

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Abs.No.332.
In-Situ Doping in CVD Epitaxial Si_1-xGe_x Heavy-Doping and Electrical Characteristics International-presentation

J. Murota, A. Moriya, T. Kikuchi, T. Noda, C. Deng, M. Sakuraba, T. Matsuura

1999 Mat. Res. Soc. Spring Meeting　1999/04/05

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Abs.No.V2.3.
Phosphorus Diffusion from Doped Si_1-xGe_x Film into Silicon International-presentation

S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, J. Murota

1999 Mat. Res. Soc. Spring Meeting　1999/04/05

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Abs.No.S9.2.
Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping International-presentation

M. Sakuraba, T. Matsuura, J. Murota

1998 Mat. Res. Soc. Fall Meeting, Symp. I: III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications　1998/11/30
Atomic-Layer Nitridation of Si(100) by NH₃ Using Flash Heating International-presentation

T. Watanabe, M. Sakuraba, T. Matsuura, J. Murota

Symp. Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis, The Electrochem. Soc. Fall Meeting　1998/11/01

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Abs.No.806.
Atomic-Layer Adsorption of P on Si(100) by Using Ultraclean LPCVD International-presentation

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

Symp. Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis, The Electrochem. Soc. Fall Meeting　1998/11/01

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Abs.No.784.
Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_1-xGe_x Films Epitaxially Grown Using Ultraclean LPCVD International-presentation

A. Moriya, M. Sakuraba, T. Matsuura, J. Murota

14th Int. Vacuum Congress (IVC-14) & 10th Int. Conf. Solid Surfaces (ICSS-10)　1998/08/31

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Abs.No.EM.WeA.4.
Heavy Doping Characteristics of P and B in Si_1-xGe_x Epitaxial Films International-presentation

J. Murota, A. Moriya, M. Sakuraba, T. Matsuura

1998 Euro. Mat. Res. Soc. Spring Meeting　1998/06/16
Process Technology for Sub 0.1μm Si Devices International-presentation

J. Murota, T. Matsuura, M. Sakuraba

1998 Advanced Research Workshop on “Future Trends in Microelectronics: Off the Beaten Path”　1998/05/31
Atomic-Layer Surface Reaction of NH₃ on Si (100) at Low Temperatures International-presentation

J. Murota, T. Watanabe, M. Sakuraba, T. Matsuura

1998 Int. Symp. Formation, Physics and Device Application of Quantum Dot Structures (QDS'98)　1998/05/31

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Abs.No.Tu4-10.
In-Situ Heavy Doping of P and B in Low-Temperature Si_1-xGe_x Epitaxial Growth Using Ultraclean LPCVD International-presentation

J. Murota, A. Moriya, M. Sakuraba, C.J. Lee, T. Matsuura

8th Int. Symp. Silicon Materials Sci. & Technol./1998, The Electrochem. Soc., 193rd Meeting　1998/05/03

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Abs.No.336.
Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_1-xGe_x Films Using Ultraclean LPCVD International-presentation

A. Moriya, M. Sakuraba, T. Matsuura, J. Murota, I. Kawashima, N. Yabumoto

1998 Mat. Res. Soc. Spring Meeting, Symp. FF: Epitaxy and Applications of Si-Based Heterostructures　1998/04/13

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Abs.FF9.8.
Low Temperature Selective Heteroepitaxy of Heavily Doped Si_1-xGe_x on Si for Application to Ultrasmall Devices International-presentation

J. Murota, M. Sakuraba, T. Matsuura

44th American Vac. Soc. National Symp　1997/10/20
Atomic-Layer Growth of Si on Ge(100) Using SiH₄ International-presentation

J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura

44th American Vac. Soc. National Symp　1997/10/20
Fabrication of 0.1μm MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_1-xGe_x CVD International-presentation

J. Murota, M. Ishii, K. Goto, M. Sakuraba, T. Matsuura, Y. Kudoh, M. Koyanagi

27th Euro. Solid-State Device Res. Conf. (ESSDRC)　1997/09/22
Low-Temperature Surface Reaction of CH₄ on the Si(100) Surface International-presentation

A. Izena, M. Sakuraba, T. Matsuura, J. Murota

6th Int. Conf. Chemical Beam Epitaxy and Related Growth Techniques (ICCBE6)　1997/09/07

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Tul.5
Low-Temperature Epitaxial Growth of In-Situ Phosphorus Doped Si_1-xGe_x Films in the SiH₄-GeH₄-PH₃ Gas System International-presentation

J. Murota, C.J. Lee, M. Sakuraba, M.Ishii. T. Matsuura, I. Kawashima, N. Yabumoto

6th Int. Conf. Chemical Beam Epitaxy and Related Growth Techniques (ICCBE6)　1997/09/07

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Tul.4.
H-Termination on Ge(100) and Si(100) by Diluted HF Dipping and by Annealing in H₂ International-presentation

M. Sakuraba, T. Matsuura, J. Murota

5th Int. Symp. Cleaning Technol. in Semiconductor Device Manufacturing, The Electrochem. Soc. Fall Meeting　1997/08/31
Phosphorus Doping Effect on Si_1-xGe_x Epitaxial Film Growth in the SiH₄-GeH₄-PH₃ Gas System Using Ultraclean LPCVD International-presentation

C.J. Lee, M. Sakuraba, M. Ishii, T. Matsuura, J. Murota, I. Kawashima, N. Yabumoto

14th Int. Conf. Chemical Vapor Deposition (CVD-XIV)/1997, The Electrochem. Soc. Fall Meeting　1997/08/31
Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH₃ International-presentation

T. Watanabe, A. Ichikawa, M. Sakuraba, T. Matsuura, J. Murota

14th Int. Conf. Chemical Vapor Deposition (CVD-XIV)/1997, The Electrochem. Soc. Fall Meeting　1997/08/31
0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes International-presentation

M. Ishii, K. Goto, M. Sakuraba, T. Matsuura, J. Murota, Y. Kudoh, M. Koyanagi

6th Int. Symp. Ultra Large Scale Integration Sci. & Technol./1997, The Electrochem. Soc. Spring Meeting　1997/05/04
Atomic-Layer Surface Reaction of SiH₄ on Ge(100) and GeH₄ on Si(100) International-presentation

J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura

1996 Int. Symp. Formation, Physics and Device Application of Quantum Dot Structures (QDS'96)　1996/11/04
Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas International-presentation

S. Kobayashi, M. Sakuraba, T. Matsuura, J. Murota, N. Mikoshiba

9th Int. Conf. Vapor Growth & Epitaxy (ICVGE-9)　1996/08/04
Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures International-presentation

T. Watanabe, M. Sakuraba, T. Matsuura, J. Murota

13th Int. Conf. Chemical Vapor Deposition (CVD-XIII)/1996, The Electrochem. Soc. Spring Meeting　1996/05/05
Single Atomic-Layer Growth Control in Si/Ge Heteroepitaxy by CVD Using SiH₄ and GeH₄ Gases International-presentation

J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura

1996 Mat. Res. Soc. Spring Meeting　1996/04/08
Single Atomic-Layer Growth of Si on Ge Using SiH₄ International-presentation

T. Watanabe, M. Sakuraba, J. Murota, T. Matsuura, Y. Sawada

13th Int. Vacuum Congress (IVC-13) & 9th Int. Conf. Solid Surfaces (ICSS-9)　1995/09/25

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EM3-tuA-8.
Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using GeH₄ and SiH₄ Gases International-presentation

M. Sakuraba, J. Murota, T. Watanabe, Y. Sawada

1994 Int. Conf. Solid State Devices and Materials (SSDM)　1994/08/23
Atomic-Layer Epitaxy Control of Ge and Si in Flash-Heating CVD Using GeH₄ and SiH₄ Gases International-presentation

M. Sakuraba, J. Murota, Y. Sawada, S. Ono

3rd Int. Symp. Atomic Layer Epitaxy and Related Surface Processes (ALE-3)　1994/05/25
Stability of the Dimer Structure on the Si Film Epitaxially Grown on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition International-presentation

M. Sakuraba, J. Murota, S. Ono

Int. Conf. Advanced Microelectronic Devices and Processing (AMDP)　1994/03/03
Stability of the Si(100) Surface Epitaxially Grown by CVD International-presentation

M. Sakuraba, J. Murota, S. Ono

1993 Int. Conf. Solid State Devices and Materials (SSDM)　1993/08/29
Atomic Layer Growth of Si in Flash Heating CVD Using SiH₄ Gas International-presentation

M. Sakuraba, J. Murota, S. Ono

12th Int. Symp. Chemical Vapor Deposition (CVD-XII), The Electrochem. Soc. Spring Meeting　1993/05/16

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Abs.No.1236
Atomic Layer Control of Germanium and Silicon on Silicon Using Flash Heating in Ultraclean Chemical Vapor Deposition International-presentation

M. Sakuraba, J. Murota, N. Mikoshiba, S. Ono

1991 Int. Conf. Solid State Devices and Materials (SSDM)　1991/08/27
Atomic Layer Epitaxy of Ge on Si Using Flash Heating CVD International-presentation

M. Sakuraba, J. Murota, N. Mikoshiba, S. Ono

7th Int. Conf. Vapour Growth and Epitaxy (ICVGE-7)　1991/07/14

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Industrial Property Rights 17

半導体デバイス

櫻庭政夫, 山田敦史, 室田淳一

特許第4649604号

Property Type: Patent
半導体装置

室田淳一, 土屋敏章, 松浦孝, 櫻庭政夫

Property Type: Patent
電界効果トランジスタ及びその製造方法

酒井徹志, 室田淳一, 大見俊一郎, 櫻庭政夫

特許第3793808

Property Type: Patent
MOS型電界効果トランジスタ

室田淳一, 櫻庭政夫, 松浦孝, 土屋敏章

Property Type: Patent
MOS FIELD-EFFECT TRANSISTOR COMPRISING LAYERED STRUCTURE INCLUDING Si LAYER AND SiGe LAYER OR SiGeC LAYER AS CHANNEL REGIONS

J. Murota, M. Sakuraba, T. Matsuura, T. Tsuchiya

Property Type: Patent
MOS FIELD-EFFECT TRANSISTOR COMPRISING LAYERED STRUCTURE INCLUDING Si LAYER AND SiGe LAYER OR SiGeC LAYER AS CHANNEL REGIONS

J. Murota, M. Sakuraba, T. Matsuura, T. Tsuchiya

Property Type: Patent
半導体デバイス

室田淳一, 島宗洋介, 櫻庭政夫, 松浦孝

Property Type: Patent
NMOS and PMOS with strained channel layer

J. Murota, T. Tsuchiya, T. Matsuura, M. Sakuraba

Property Type: Patent
MOSFET WITH STRAINED CHANNEL LAYER

J. Murota, T. Tsuchiya, T. Matsuura, M. Sakuraba

Property Type: Patent
ヘテロ接合バイポーラトランジスタ

尾藤三津雄, 篠井潔, 和賀聡, 室田淳一, 櫻庭政夫, 松浦孝

Property Type: Patent
気相成長方法

室田淳一, 小野昭一, 櫻庭政夫, 御子柴宣夫, 黒河治重, 池田文秀

特許第3163267号

Property Type: Patent

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特願平3－56931の分割出願
気相成長方法及び装置

室田淳一, 小野昭一, 櫻庭政夫, 御子柴宣夫, 黒河治重, 池田文秀

特許第2680202

Property Type: Patent
A Vapour Depositing Method and an Apparatus Therefor

J. Murota, S. Ono, M. Sakuraba, N. Mikoshiba, H.Kurokawa, F. Ikeda

Property Type: Patent
[US Patent] SEMICONDUCTOR DEVICE HAVING A METAL-SEMICONDUCOR JUNCTION WITH A REDUCED CONTACT RESISTANCE

J. Murota, Y. Shimamune, M. Sakuraba, T. Matsuura

特許No. 6800544

Property Type: Patent

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US Patent
[US Patenet] SEMICONDUCTOR DEVICE HAVING A METAL-SEMICONDUCOR JUNCTION WITH A REDUCED CONTACT RESISTANCE

J. Murota, Y. Shimamune, M. Sakuraba, T. Matsuura

No. 6621145

Property Type: Patent

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US Patenet
[US Patent] VAPOR DEPOSITING METHOD

J. Murota, S. Ono, M. Sakuraba, N. Mikoshiba, H.Kurokawa, F. Ikeda

特許No. 5705224

Property Type: Patent
A VAPOUR DEPOSITING METHOD AND AN APPARATUS THEREFOR

J. Murota, S. Ono, M. Sakuraba, N. Mikoshiba, H.Kurokawa, F. Ikeda

No. 311893

Property Type: Patent

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Research Projects 24

３Ｃ／４Ｈヘテロエピ基板を用いた高信頼・高移動度ＳｉＣパワーＭＯＳＦＥＴ製作 Competitive

櫻庭政夫, 佐藤茂雄

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 基盤研究(C)

Institution: 東北大学

2024/04 - 2027/03
エッジ応用に向けた超低消費電力スパイキングニューラルネットワークハードウェア Competitive

佐藤茂雄, 櫻庭政夫, 山本英明

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 基盤研究(B)

Institution: 東北大学

2022/04 - 2025/03
Ｓｉ極薄膜における低エネルギープラズマ誘起再配列による結晶構造転換の実験的研究 Competitive

櫻庭政夫, 佐藤茂雄

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 挑戦的研究(萌芽)

Institution: 東北大学

2018/06 - 2020/03

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橋脚構造によって支えられたGe／Si極薄膜／Ge(100)構造形成のために、規則的に配置された開口穴と橋脚構造の形成のためのフォトマスクセット設計・製作とともに、過酸化水素水浸漬によるGeエッチングによるSi(100)極薄膜宙づり構造製作プロセスの研究を進めた結果、開口穴の直径が広がっていく様子が観察されたことから、Si極薄膜がエッチングマスクとなってSi下部のGeエッチングが横方向に進行することを確認でき、Si極薄膜宙づり構造実現の見通しが得られた。さらに、Si(100)面に特有なダイハイドライド構造が、低エネルギープラズマ照射によってモノハイドライド構造へ変化することを確認できた。
Selective Formation of Relaxed Ge Thin Film and Quantum Dot by Sub-Monolayer Carbon Mediation

Washio Katsuyoshi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

2015/04 - 2018/03

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To create function-merged devices, formation of Ge quantum dots (QDs) on a Si substrate by mediation of sub-monolayer carbon was investigated. It was confirmed that it was possible to form Ge QDs through optimization of process parameters in methods of Si surface reconstruction via C-Si reaction and C-mediated solid-phase growth. Growth modes of Ge QDs in the both methods and their formation mechanisms were clarified. Furthermore, formation of stacked Ge QDs structure was investigated, and it was confirmed that diameter and density of Ge QDs were possible to be maintained by introducing a strain-compensated spacer.
Formation of relaxed Ge thin films by surfactant mediation and its application to devices

WASHIO KATSUYOSHI, SAKURABA Masao

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tohoku University

2012/04 - 2015/03

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To create function-merged devices, formation of fully-relaxed Ge thin films on Si substrate by using carbon as a surfactant was investigated. By studying the process through the formation of Si-C bonds and the simultaneous fabrication of Si-C/Ge-C bonds, it was confirmed that fully-relaxed Ge thin films could be formed. Furthermore, it was found that the formation of Ge quantum dots in a self-assemble manner would be formed by the reconstruction of Si(100) surface into C(4x4) structure through the formation of Si-C bonds.
Process development for high-performance highly-strained quantum-heterostructure resonant-tunneling devices of group-IV semiconductors Competitive

SAKURABA Masao, MUROTA Junichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

2011/04 - 2014/03

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By using elctron-cyclotron-resonance plasma chemical vapor deposition, epitaxial growth of highly-strained SiGe alloy and Ge films on Si(100) with smooth surface and heavy B doping into Si and Ge epitaxial films can be realized. Nitrogen atomic-layer doping process and its effects upon hole tunneling characteristics of Si barriers in the strained SiGe/Si(100) hole resonant tunneling diode were also investigated.
Group IV Semiconductor Quantum Device Fabrication for Room Temperature Operation Competitive

SAKURABA Masao, MUROTA Junichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

2007 - 2009

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Low-temperature SiH_4 exposure or high Si growth rate by use of Si_2H_6 gas for Si cap layer formation on Si_<1-x>Ge_x effectively suppress interface roughness in high-Ge-fraction Si/Si_<1-x>Ge_x heterostructures. By utilizing the method into resonant tunneling diode fabrication process, negative differential conductance characteristics at room temperature is demonstrated.
Creation of High-Carrier-Concentration and High-Mobility Artificial Crystal of Group IV Semiconductors by Atomically Controlled CVD Processing Competitive

MUROTA Junichi, SAKURABA Masao

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tohoku University

2007 - 2009

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N atomic-layer doping in SiGe by SiGe deposition on a thermally nitrided SiGe surface and highly concentrated P atomic-layer doping by lowering temperature of Si deposition on a P atomic layer already formed strained SiGe surface were achieved. Moreover, by lowering temperature of B and subsequent Si depositions on a Si surface, B atomic-layer doped Si with higher carrier concentration was achieved. Additionally, it was clarified that suppression of intermixing and strain relaxation by C atomic-layer doping at a strained SiGe/Si heterointerface and that, in thermal CVD of SiGe and B doped Si epitaxial films, strain significantly influences upon surface reaction, segregation, solid solubility limit and electrical activity of impurity.
Fluctuations in Interface Properties and Noise in Nano-Scaled Devices Competitive

TSUCHIYA Toshiaki, SAKURABA Masao, MOGAMI Tohru, TAKEHIRO Shinobu, MISHIMA Seiji, YOSHIDA Keiichi, MORI Yuki, MORIMURA Yuta

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research on Priority Areas

Institution: Shimane University

2006 - 2009

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We found that charge pumping characteristics in MOSFETs depend on on-time of the gate pulse used in the measurements, and proposed an ultimate method to evaluate the fluctuation in the properties of individual interface traps. Using the method, we successfully observed the fluctuations in the number and carrier capture rate of interface traps in nanoscale MOSFETs. These results will greatly influence the advancement of the research on noise in MOS devices including clarification of the RTN mechanism.
Development of Atomically Controlled Plasma Processing for GroupIV Quantum Device Fabrication Competitive

SAKURABA Masao, MUROTA Junichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research on Priority Areas

Institution: Tohoku University

2006 - 2009

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By utilizing surface reaction of reactant gases under ECR Ar plasma irradiation without substrate heating, epitaxial growth of atomically flat highly strained films of Ge and Si as well as B atomic-layer doped Si were demonstrated. Moreover, by lowering of the plasma energy in the epitaxial growth, it was clarified that plasma damage and surface B reduction by Ar plasma irradiation can be effectively suppressed and it is quite important to increase of strain and B concentration in the B atomic-layer doped films.
Pioneer study on hetero-interfaces to realize non-classical nano-hetero-devices Competitive

TSUCHIYA Toshiaki, MUROTA Junichi, SAKURABA Masao, TAKEHIRO Shinobu, MISHIMA Seiji, YOSHIDA Keiichi, MORI Yuki

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Shimane University

2006 - 2008
Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductors Competitive

SAKURABA Masao, MUROTA Junichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

2004 - 2006

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Purpose of this project is, by atomic-layer control of group-IV semiconductors and introduction of atomic-order heterostructures, investigation of electronic-band modulation and formation of quantum tunneling structures in order to clarify new properties of carrier transport/generation/recombination processes and creation of novel electronic-band modulated semiconductors. Utilizing surface reactions of B_2H_6 and PH_3 on Si,Si_<1-x>Ge_x and Ge surfaces, conditions for atomic-layer formation of B and P were found under suppression of intermixing and islanding at low temperatures. Additionally, it was found that, by using Si_2H_6 as a more reactive reactant gas than SiH_4,P segregation during capping Si layer growth on a P adsorbed Si(100) could be effectively suppressed and many of P atoms were incorporated in a thin film region at the interface with the thickness below 2 nm and the maximum P concentration of 3x10^<21> cm^<-3>(atomic ratio 6%). Moreover, it was also found that such P atomic-layer doped structures showed higher Hall mobility than the conventional uniformly P doped Si. By using ECR plasma CVD without substrate heating, highly strained Ge and Si epitaxial growth on a (100) surface of Si and Ge with atomic-order flatness was achieved, and possibility of highly strained group-IV semiconductor heterostructures was shown (which was difficult to be achieved by conventional thermal CVD processes). In order to achieve higher-performance p-type resonant tunneling diodes, by investigating new conditions for epitaxial growth of high quality Si_<1-x>Ge_x/Si heterostructures, it is concluded that increase of Ge fraction in the heterostructure is quite effective to reach room temperature operation. These results are very useful to create novel electronic-band modulated semiconductors.
Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor Heterostructures Competitive

MUROTA Junichi, SAKURABA Masao, TAKEHIRO Shinobu

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tohoku University

2003 - 2005

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Purpose of this project is development of atomic layer-by-layer growth process for various kinds of hetero materials (e.g. Si, Ge, C and etc.) and creation of artificial crystal with atomically-controlled group-IV semiconductor heterostructures by using our established techniques of Langmuir-type adsorption and reaction control in chemical vapor deposition. It is found that atomic-order ultrathin film of C and N on Si-Ge group-IV semiconductor surface and subsequent Si epitaxial film on the surface at low temperature can be formed. This result enables to realize an atomic-layer doped group-IV semiconductor heterostructure. It is also found that, by C introduction, thermal stability of a Si atomic layer on Ge surface is improved and critical thickness of strained Si_<1-x>Ge_x epitaxial film on Si(100) is increased. In the case of Si epitaxial growth on the P atomic layer formed on strained Si_<1-x>Ge_x/Si(100), surface segregation phenomenon is effectively suppressed by use of Si_2H_6 instead of SiH_4 as a reactant gas, and maximum P atom concentration exceeds far above 10^<21>cm^<-3> at the heterointerface of Si_<1-x>Ge_x/Si. By using surface reaction enhancement under low-energy ECR Ar plasma irradiation, high quality epitaxial growth of atomic-order flat Si and strained Ge films without substrate heating is realized. Atomic-order nitridation control and subsequent Si epitaxial growth on the nitrided surface are also realized by the plasma process, and maximum N atom concentration reaches about 2x10^<21>cm^<-3> (atomic ratio of 4%) in the 2nm-thick ultrathin buried region. It is found that highly strained 1nm-thick Ge films can be epitaxially grown on Si(100). These results are very useful for realization of the high quality multilayer film with atomically-controlled group-IV semiconductor heterostructures.
Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration Competitive

MUROTA Junichi, MEGURO Toshiyasu, MATSUURA Takashi, SAKURADA Masao

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tohoku University

2001 - 2003

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In this research, heavily impurities (B and P) were doped in SiGeC heterostructure using atomically controlled low-pressure chemical vapor deposition (LP-CVD) in order to form a very low contact resistance between metal and semiconductor. Formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (PH_3 and B_2H_6) on Si(100) and Ge(100) have been achieved using atomically controlled ultraclean LP-CVD. Heavily impurity doped epitaxial Si films with the impurity concentration of over 10^<21>cm^<-3> are formed by an atomic-layer doping technique. By growing the multi-layer P-doped epitaxial Si with a high carrier concentration at a very low temperature of 450℃ on the P-doped SiGe films, very low contact resistivity of 6.5x10^<-8>Ωcm^2 between W and the Si film has been obtained. For the B-doped SiGeC films with a high carrier concentration, very low contact resistivity is obtained to be 3.8x10^<-8>Ωcm^2 between W and the Si film, 3x10^8<-8>Ωcm^2 between Ti and the Si film. This heavily impurity-doping technique promises to achieve very low contact resistance between metal and semiconductor for high performance semiconductor devices.
人工IV族半導体の形成と光・電子物性制御 Competitive

白木靖寛, 宇佐美徳隆, 黄晋二, 尾鍋研太郎, 中川清和, 末光眞希, 片山竜二, 長田俊人, 櫻庭政夫

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 特定領域研究

Institution: 東京大学

1999 - 2003

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平成15年度の研究成果は、大きく分けて次の3つの項目に分けられる。(1)良質な緩和SiGe疑似基板作製に関する研究、(2)歪みSiおよびGeチャネルトランジスタの試作と評価、(3)SiGe量子構造の発光特性の評価、(4)Si中のN原子原子層ドーピング、である。(1)においては、イオン打ちこみを行ったSi基板上のSiGe薄膜エピタキシャル成長について評価し、イオン打ち込みによって、平坦でありながら、薄くかつ緩和率の高いSiGe疑似基板を作製できる技術の確立に成功した。(2)では、歪みSiチャネル素子は高移動度を有しているが、チャネル端の自由表面による応力緩和が素子を微細化することによりチャネル全体に及ぶと考えられるため、微細素子では歪みSi薄膜が示す高キャリア移動度が達成されない懸念がある。我々は、実験的に、メサ構造の両端部近傍では歪み緩和が起こっていること、またメサ構造の歪み分布が素子サイズに大きく依存すること、さらにシミュレーションにより、バンド構造が大きく変化することを見出し、今後の素子設計の基礎データを得た。(3)では、SiGe量子構造と並んでSiベース発光材料として期待されている鉄シリサイドの発光とSiGe量子構造の発光との比較を行った。両者の発光強度および温度特性はほぼ同じであり、化合物半導体の発光強度に比べると3桁から4桁低いことがわかった。実用化を考えた場合、SiGe量子構造および鉄シリサイド材料の更なる改善が必要であることが示された。(4)では、N原子層形成si(100)表面上において、500℃という低温でのCVD法によりSi薄膜がエピタキシャル成長することを見いだし、3nm間隔の多層N原子層ドーピング構造を実現した。また、Si(100)基板非加熱下での低エネルギーECR Arプラズマ支援により、原子層オーダでのSiエピタキシャル成長制御を実現するとともに、Si薄膜の結晶性劣化要因はArイオン打ち込みによるダメージであることを見いだし、Siエピタキシャル薄膜の高品質化を実現した。本研究で得られた成果については、平成16年度の「成果とりまとめ」において、ワークショップおよび成果報告冊子の作成を通してまとめる予定である。
Fabrication of Resonant Tunneling Diode by Atomic Layer-by-Layer Epitaxial Growth of Si-Ge-C-N System Competitive

SAKURABA Masao, MEGURO Toshiyasu, MUROTA Junichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

2000 - 2002

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In the present work, in order to create an atomically controlled materials with a novel properties, atomic-layer formation of N and C on Si(100) and Ge(100), subsequent Si epitaxial growth on the N/Si(100) or C/Ge(100), and fabrication of an atomically controlled resonant-tunneling diode of Si-Ge-C-N system have been investigated. In a low-temparature atomic-order surface reaction of SiH_3CH_3 on Ge(100), it is found that single atomic layers of Si and C are formed self-limitedly, as well as N atomic layer formation on Si(100). The Si epitaxial growth on one tenth atomic layer of C/Ge(100) and a half atomic layer of N/Si(100), Si/have been achieved at the growth temperatures below 500℃. In the Si/N/Si structures, the incorporated N atoms are corfined within about 1nm thickness and the maximum concentration is above 5x10^<21>cm^<-3>. It is found that suppression of Si_3N_4 structure is important to obtain a high quality N atomic-layer doped Si film with high N concentration. It is also found that interdiffusion at Si/SiGe/Si(100) heterostructure during thermal treatment proceeds faster with increase of Ge fraction, although the intermixing at Si/Ge heterointerface is suppressed by the existence of one tenth (7x10^<13>cm^<-2>) of C at the interface. These results are quite important to realize high-quality atomically-controlled heterostructure devices. By using above results, atomic-layer N doping is applied to double Si barriers of SiGe resonant tunneling diode, and measured electrical characteristics show that tunneling current density is obviously suppressed compared to the reference diode without the N doping. From these results, it is suggested that an electronic band structure of Si can be modulated by the N doping, and that the atomic-layer doping technique is effective for control of resonant tunneling characteristics.
Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System Competitive

MUROTA Junichi, SAKURABA Masao, MATSUURA Takashi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

1999 - 2001

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In this scientific research, in order to realize the high speed and large capacitance mobile communication system with low working voltage and low power consumption, a new mobile communication System-On-Chip which is mainly integrated by SiGe-based MOS and HBT have been developed under the 3-year-plan from 1999 with the co-work of the Innovation for High Performance Microelectronics (IHP), Germany. In the last year of the 3 years, the study on the ultra-small structure formation of SiGe and the ultra-high speed mobile-communication device fabrication was conducted. The study on the ultra-small SiGe structure formation includes the realization of the exact control of impurity-doped SiGe(C) thin film deposition, of the exact anisotropy etching control of ultra-small structure SiGe(C)-based semiconductor, of the integration of the adsorption/reaction constant for source gas molecules in CVD process, of the database development of the atomic layer growth and the atomic layer plasma process, of the heavily P-doped semiconductor, and of atomic order nitridation and atomic order nitrogen doping control. Moreover, the study on the ultra-high speed device fabrication includes the development and the investigation of highly controllable process technology, of ultra-large scale integrated circuit fabrication process, of the ultra-high speed device structure, and the evaluation of the fabricated devices. From these studies, especially, the CMOS applicability of 0.1-μm MOSFETs with super self-aligned ultra-shallow junction formed by selective B-doped SiGe epitaxy, the excellent low frequency noise characteristics of SiGe-channel pMOSFET, the device fabrication process and the structure of 100GHz-HBT, the metallization technology with ultra-low contact resistance, and the exact control of B- or P-doped SiGe(C) epitaxial growth have been reported. Furthermore, highly exact evaluation process of the ultra-small SiGe(C) structure, which is extremely important to device application, was developed.
Si-Ge系エピタキシャル成長による超高濃度不純物半導体の形成とその物性 Competitive

室田淳一, 櫻庭政夫, 松浦孝

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 萌芽的研究

Institution: 東北大学

1999 - 2000

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高性能超微細ヘテロデバイスを実現するために、高品質Si-Ge系ヘテロエピタキシャル薄膜の膜厚や不純物ドーピング濃度の精密な制御、不純物の拡散抑制と同時に、電極との超低抵抗コンタクトのために超高濃度ドーピングが不可欠である。平成11年度までに高清浄CVDを用いたSi-Ge系薄膜へのP及びBのin-situドーピング特性を明らかにした。本年度はSiH_4-GeH_4-PH_3,-B_2H_6系にCH_3SiH_3を添加して、Si-Ge-C系低温エピタキシャル膜のP及びBのin-situドーピング特性を調べた。その結果、P及びBのSi-Ge-C系薄膜へのドーピング特性は、Si-Ge系と同様に広い濃度範囲にわたってラングミュア型の吸着・反応を仮定することにより説明できることを明らかにした。また、C比率が1%以上のSi-Ge-C系薄膜では、P及びBが電気的に不活性になる傾向がある事を明らかにした。一方、PH_3によりSi表面上にPを原子層形成し、その上にSiH_4によりSiを形成した原子層ドーピング構造を多重積層した超高濃度PドープSi単結晶の形成についても研究した。450℃において平均P濃度が6x10^<20>cm^<-3>のPとSiの多重積層膜を形成し、ドープしたPの60%が電気的に活性となり、3x10^<-4>Ωcmという低抵抗率になることを確認した。また、この薄膜を550-750℃で熱処理することにより、キャリア密度が減少し、抵抗率が増加することを確認した。これから低抵抗Si単結晶が450℃という低温でのみ形成できることを明らかにした。以上のように、Si-Ge-C系薄膜中へのP及びBのIn-situドーピング特性を明らかにする一方で、原子層ドーピングを応用した超低抵抗Si単結晶の実現の見通しを得た。
Si系アモルファス絶縁薄膜の表面構造敏感エッチングと原子制御 Competitive

松浦孝, 櫻庭政夫, 室田淳一

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 萌芽的研究

Institution: 東北大学

1998 - 1998

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本萌芽研究では、Si系アモルファス絶縁膜の原子層エッチングを表面構造に敏感な形で実現し、その反応過程を基礎的に解明することを目指して研究を行った。高清浄ECRプラズマ装置を用い、まず、結晶性のSiやGeで実現した塩素ラジカルの吸着とArイオン照射を交互に繰り返す方法による原子層エッチング法を試み、アモルファスのSi窒化膜は物理的スパッタ効果と同程度の微少量しかエッチングされないことを明らかにした。これはSiとN原子の結合エネルギーが強いためと考え、それを効果的に弱める化学種として励起水素を用いた検討を行った。その結果、表面N原子のみを選択的に1原子層自己制限的に除去できる条件があることを見いだした。さらに、表面に残留した1原子層のSiを水素添加Arイオン照射で選択的に除去できるころを見いだした。そこで、これら2つの素過程を交互に繰り返すことにより、役割分担型でSi窒化膜の原子層エッチングが可能であることを提案し、これを3サイクルまで繰り返して1サイクル当たりSi窒化膜の平均原子層厚分ずつエッチングされることを実証した。なお、これらの実験は1〜2mmの極薄膜厚の試料を用い、表面分析をX線光電子分光法(XPS)、FTIR/RAS、RHEED等を用いて行ったものである。本萌芽研究の成果はSi系絶縁膜の原子層エッチングをはじめて可能にしたもので、デバイス極微細化の進展とともに今後重要になる技術であり、今後引き続いて関連研究を発展的に継続する予定である。
IV族半導体極微細構造形成プロセスに関する研究 Competitive

室田淳一, 櫻庭政夫, 松浦孝

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 特定領域研究(A)

Institution: 東北大学

1998 - 1998

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本特定領域研究では、原子層成長・エッチング法をはじめとするラングミュア吸着・反応の制御プロセス技術を駆使して、IV族半導体極微構造を形成する原子制御プロセス技術を開拓することを目指して、その基礎から応用まで広く研究を行った。表面吸着・反応制御については、SiとGeの一原子層ずつの成長、Si表面のNH_3による400℃での原子層窒化、Si表面のCH_4による500〜600℃での原子層炭化、SiおよびGe表面でのSiH_3CH_3の原子層吸着、Si及びGe表面へのPの原子層ドーピング、Si_<1-x>Ge_x系の分数原子層エッチング、Si窒化膜の役割分担原子層エッチング、WF_6とSiH_4の交互導入による水素終端制御Si表面での低温吸着・反応制御等を実現し、各々の素過程をLangmuir型表面吸着・反応を基礎に考察した。また、窒素プラズマによるSi表面の原子層改質を実現し、その反応へのラジカルとイオンの寄与について調べ、一方、不純物ドープSi_<1-x>Ge_xと電極用金属との接触抵抗と界面反応について検討した。これらにおいては実験手法として、高清浄低温反応雰囲気、Xeフラッシュランプによる瞬時加熱法、ECRプラズマによる低エネルギーイオン照射法を駆使した。極微細構造の形成については、ソース/ドレインの自己整合型極浅接合形成法を用いた極微細MOSFET、Si_<1-x>Ge_xの高Ge組成エピタキシャル層をチャネルに用いたMOSFET、それらに用いるSi_<1-x>Ge_xの高品質選択エピタキシャル成長とPやBの高濃度ドーピング、高濃度不純物ドープポリシリコンの高選択異方性エッチング、選択成長Wによるソース/ドレイン抵抗の低減等を実現した。本基盤研究の成果は単電子デバイスをはじめ量子効果デバイスをSi集積回路技術に整合性良く実現するために不可欠なものであり、今後引き続いて関連研究を発展的に継続する予定である。
Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices Competitive

MUROTA Junichi, SAKURABA Masao, MATSUURA Takashi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: TOHOKU UNIVERSITY

1996 - 1998

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In this scientific research, to establish fabrication process technology of ultrasmall group IVsemiconductor devices, extended researches have been carried out including fundamentals and applications of Langmuir-type adsorption/reaction process such as atomic-layer growth and etching. As to atomically controlled processing, by utilizing a low-temperature ultraclean reaction atmosphere, flash heating by Xe lamps, and low-energy ion irradiation by an ECR plasma, we have achieved atomic layer-by-layer growth of Si and Ge, atomic-layer nitridation of Si by NH_3 at 400ﾟC, atomic-layer carbonization of Si(100) by CH_4 at 500-600ﾟC, atomic-layer adsorption of SiH3CH3 on Si and Ge, atomic-layer doping of P on Si and Ge, fractional atomic-layer etching of a SiGe system, atomic-layer role-share etching of silicon nitride, etc. Adsorption and reaction process in low temperature selective deposition of W has been also investigated by alternate supply of WF6 and SiH_4. Each of these atomic-order processes has been described by Langmuir-type simple adsorption and reaction formalism, which contributes to establish a base of a high precision control of the process. As to device fabrication process, we have fabricated ultrasmall MOSFETs utilizing super-self-aligned ultrashallow junction formation in the source/drain region, and MOSFETs with a SiGe epitaxial layer as a channel. Also, we have developed each process such as selective epitaxy of SiGe and in-situ heavy doping with P and B, highly selective anisotropic etching of heavily doped polysilicon, reduction of source/drain resistance by selective growth of W, as well as a total ultrasmall device process by combination of these individual processes. These research results supply a fundamental key to ultrasmall device fabrication technology with group IVsemiconductors.
IV族半導体薄膜へのタングステンのデルタド-ピング Competitive

室田淳一, 櫻庭政夫, 松浦孝

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 萌芽的研究

Institution: 東北大学

1997 - 1997

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本研究では、高清浄減圧CVD法をはじめとする高性能プロセス技術を駆使してSiやGe等のIV族半導体中に金属W元素を極薄層形成することを目的とし、Si表面及び比較のためのW表面上の水素終端状態を制御し、その上にWF_6とSiH_4を交互導入することにより、Si上へのW極薄層の低温選択成長の反応機構についてRHEED、XPS、FTIR/RAS等の評価法を用いて実験的に明らかにした。まず、SiやGe表面の水素終端状態が、フッ酸処理時のフッ酸濃度、水洗時間等の処理条件、並びに高清浄雰囲気中熱処理時の温度、ガス種、冷却時間等のプロセス条件によりどう変化するか、その関係を明らかにした。これをもとに水素終端状態を制御したSi表面へのWF_6の吸着を調べ、Si表面水素、特にダイハイドライドがWF_6の吸着を抑制していることを明らかにした。また、WF_6-SiH_4反応ガス系での吸着・反応過程に関してガス交互導入法により調べ、まずWF_6により表面にWF_xが吸着し、つぎにSiH_4がその吸着WF_xに吸着すると考えられること、その際FはとSiH_yF_Z側に移動している可能性があること、さらにWFはSiH_yF_Zを脱離させる形で反応し、次のSiH_4の吸着点となると考えられることを順次明らかにしてきた。これらにより、Si表面に10^<15>cm^<-2>オーダのW原子を吸着させることができるようになり、半導体上に配置した原子オーダの金属元素の研究の路が拓かれた。
IV族半導体極微細構造形成プロセスに関する研究 Competitive

室田淳一, 櫻庭政夫, 松浦孝

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 重点領域研究

Institution: 東北大学

1996 - 1996

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本研究では、原子層成長・エッチング法をはじめとするラングミュア吸着・反応の制御プロセス技術を駆使して、IV族半導体極微細デバイスの製作プロセス技術を確立し、それによりSi系デバイスの微細化限界を実験的に追求し、新しい原理に基づくSiデバイス創生の指針を得ることを目的としている。本年度は、3年計画の第2年度として、前年度の改造整備を進めた原子制御プロセス装置の各種プロセス条件出しと安定化を進めると同時に、Si-Ge-C-N系の原子層成長、表面処理、並びに原子層エッチングを進め、また、SiGe低温選択エピタキシャル成長における高濃度ド-ピングとその極微細デバイスへの応用の研究を中心に行った。原子層成長や表面処理の研究では、フッ酸処理やpreheat法によりSi及びGe表面の水素終端を制御してSiH_4、GeH_4等の単分子吸着層の形成を図った。また、NH_3による400℃での一原子層熱窒化過程が、Si表面にNH_3のLangmuir型吸着脱離平衡層が形成されその層からの反応としてよく記述されること、CH_4による500〜600℃でのSi表面一原子層炭化過程が、Si表面に入射するCH_4分子数に比例したLangmuir型吸着・反応でよく記述されることを明らかにした。また、原子層エッチングの研究では、塩素の吸着と低エネルギーAr^+イオン照射を交互に行うことにより、SiやGeに引き続いてSiGeの自己制限型原子層エッチングが可能であることを実証し、Si窒化膜の役割分担型原子層エッチングの可能性を見い出した。極微細デバイス製作プロセスの研究では、MOSFETの極浅ソース・ドレイン層形成のためのSiGe混晶選択エピタキシャル成長層への高濃度不純物ド-ピング過程について定式化を行った。
IV族半導体極微細構造形成プロセスに関する研究 Competitive

室田淳一, 櫻場政夫, 松浦孝

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 重点領域研究

Institution: 東北大学

1996 - 1996

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本研究では、原子層成長・エッチング法等ラングミュア吸着・反応の制御プロセス技術を駆使して、IV族半導体極微細構造を形成する原子制御プロセス技術を開拓することを目的としている。本年度は、表面吸着・反応制御の研究として原子層成長、表面処理、並びに原子層エッチング、デバイス製作プロセスの研究として低温ヘテロエピタキシャル成長とその極微細デバイスへの応用の研究を中心に行った。原子層成長や表面処理の研究では、反応温度を低温化し反応雰囲気を高清浄化して不要不純物の吸着を抑え、Si及びGe表面の水素終端をpreheat法により制御して、SiH_4、GeH_4等の単分子吸着層の形成を図った。フラッシュ光照射による瞬時加熱を併用し、SiとGeの一原子層ずつの成長を可能にし、SiH_4やGeH_4の吸着量がLangmuir型吸着・脱離平衡で表され表面吸着点密度が表面原子密度に等しい条件があることを明らかにした。また、NH_3による300〜500℃での一原子層熱窒化を実現し、CH_4による600℃でのSi表面一原子層炭化の可能性を示した。原子層エッチングの研究では、塩素の吸着と低エネルギーAr^+イオン照射を交互に行うことにより、SiやGeの自己制限型分数原子層エッチングが可能であり、超微細パターン加工もできることを実証し、飽和エッチ量や塩素の吸着速度のSi基板面方位及び反応性吸着種依存性を明らかにした。極微細デバイス製作プロセスの研究では、不純物ドープSiGe混晶の選択エピタキシャル成長層をソース・ドレイン層とする新しいMOSFET製作プロセスを提案し、ゲート電極寸法と実効チャネル長がほぼ等しい75nmルールのMOSFETを実現した。また、水素終端の制御により〜100℃という低温でSi上へのWの選択成長を実現し、電極構成への適用の研究を進めている。

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Teaching Experience 14

Introduction to Semiconductor Device Physics and Technology　Tohoku University, Graduate School of Engineering Postgraduate
半導体デバイス　東北大学工学部, 5セメスター Undergraduate (specialized)
半導体材料プロセス工学　東北大学工学部, 6セメスター Undergraduate (specialized)
電子材料プロセス工学　東北大学大学院工学研究科, 第一学期 Postgraduate
微細プロセス科学　東北大学大学院工学研究科, 第二学期 Postgraduate
半導体デバイス工学　岩手大学理工学部物理・材料理工学科マテリアルコース, 3年生後期, 非常勤講師 Undergraduate (specialized)
電気・通信・電子・情報工学学生実験ＡＡ－６半導体Ⅰ（導電率、Hall効果）　東北大学工学部, 4セメスター Undergraduate (specialized)
集積回路基礎　仙台高等専門学校（広瀬キャンパス）知能エレクトロニクス学科, 5年前期, 非常勤講師 Undergraduate (specialized)
半導体デバイス　東北大学工学部, 6セメスター Undergraduate (specialized)
材料・プロセス工学　東北大学工学部, 6セメスター Undergraduate (specialized)
高集積電子工学　東北大学大学院工学研究科, 第一学期 Postgraduate
半導体工学　仙台高等専門学校（広瀬キャンパス）電子工学科, 5年前期, 非常勤講師 Undergraduate (specialized)
熱学・統計力学A　東北大学工学部, 5セメスター Undergraduate (specialized)
半導体工学　仙台電波工業高等専門学校, 電子工学科, 5年前期, 非常勤講師 Undergraduate (specialized)

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Social Activities 3

基礎講座「半導体を基礎から学べる社会人のための半導体基礎講座」

東北大学電気通信研究所ナノ・スピン実験施設、研究基盤技術センター

2015/12/15 - Present

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各種電⼦・磁性デバイスや集積回路の製作に必要な半導体プロセス技術の基本について学ぶ。実験ではSiO2膜の成膜とエッチング、フォトリソグラフィー、SEMを⽤いたナノ構造の観察、X線回折による薄膜試料の構造解析などを⾏う。2日間／年2回開催（9月、3月）。
講義「半導体ができるまで」

いわて半導体アカデミー公開講座（大学生コース）

2018/09/06 - 2018/10/06
特別講演「ナノへテロ半導体の創生」

文部科学省スーパーサイエンスハイスクール(SSH)制度講演会（新潟南高校）

2004/06/09 - 2004/06/09

Media Coverage 1

Success in Seamlessly Stacking of SiC with Different Crystal Structures ─Prospects of Significantly Reducing Power Loss in Power Semiconductors─ (in Japanese) Myself

Tohoku University　Press Releases and Research Results (in Japanese)

2023/09/28

Type: Internet

Other 1

Virtual Laboratory on Materials (Entrusted analysis of materials using general-purpose analytical instruments)