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Strong antiferromagnetic interlayer exchange coupling induced by small additions of Re to an Ir interlayer in synthetic antiferromagnetic systems
Yoshiaki Saito, Tufan Roy, Shoji Ikeda, Masafumi Shirai, Hiroaki Honjo, Hirofumi Inoue, Tetsuo Endoh
Scientific Reports 15 (1) 2025/03/15
Publisher:
Springer Science and Business Media LLC
DOI：
10.1038/s41598-025-94088-w
eISSN：
2045-2322
-
Enhanced field-like torque generated from the anisotropic spin-split effect in triple-domain RuO2 for energy-efficient spin–orbit torque magnetic random-access memory
Peer-reviewed
T. V. A. Nguyen, H. Naganuma, T. N. H. Vu, S. DuttaGupta, Y. Saito, D. Vu, Y. Endo, S. Ikeda, T. Endoh
Adv. Sci. 2025 2413165-1-2413165-8 2025/03
DOI：
10.1002/advs.202413165
-
Enhancement of damping-like spin-orbit torque efficiency using light and heavy nonmagnetic metals on a polycrystalline RuO2 layer
Peer-reviewed
Y. Saito, S. Ikeda, S. Karube, T. Endoh
Phys. Rev. B 110 134423-1-134423-10 2024/10
DOI：
10.1103/PhysRevB.110.134423
-
Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction
Peer-reviewed
T. V. A. Nguyen, H. Naganuma, H. Honjo, S. Ikeda, T. Endoh
AIP Advances 14 025018-025018 2024/02/01
DOI：
10.1063/9.0000789
-
Field-free spin-orbit torque switching and large dampinglike spin-orbit torque efficiency in synthetic antiferromagnetic systems using interfacial Dzyaloshinskii-Moriya interaction
Yoshiaki Saito, Shoji Ikeda, Nobuki Tezuka, Hirofumi Inoue, Tetsuo Endoh
Physical Review B 108 (2) 2023/07/20
Publisher:
American Physical Society (APS)
DOI：
10.1103/physrevb.108.024419
ISSN：
2469-9950
eISSN：
2469-9969
-
Enhancement of Damping-Like Spin-Orbit-Torque Efficiency in Synthetic Antiferromagnetic System using Pt-Cu Alloy
Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh
2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers) 2023/05
Publisher:
IEEE
DOI：
10.1109/intermagshortpapers58606.2023.10228766
-
Charge-to-Spin Conversion Efficiency in Synthetic Antiferromagnetic System using Pt-Cu/Ir/Pt-Cu spacer layers
Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh
IEEE Transactions on Magnetics 1-1 2023
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/tmag.2023.3282626
ISSN：
0018-9464
eISSN：
1941-0069
-
Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system
Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh
Applied Physics Express 16 (1) 013002-013002 2023/01/01
Publisher:
IOP Publishing
DOI：
10.35848/1882-0786/acb311
ISSN：
1882-0778
eISSN：
1882-0786
-
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance>107 for eFlash-type MRAM
Peer-reviewed
H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, T. Nasuno, T. Tanigawa, Y. Noguchi, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh
IEEE International electron devices meeting 226-229 2022/12
DOI：
10.1109/IEDM45625.2022.10019412
-
Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer
H. Honjo, H. Naganuma, K. Nishioka, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 58 (8) 2022/08/01
DOI：
10.1109/TMAG.2022.3151562
ISSN：
0018-9464
eISSN：
1941-0069
-
Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields
T. V.A. Nguyen, Y. Saito, H. Naganuma, S. Ikeda, T. Endoh, Y. Endo
AIP Advances 12 (3) 2022/03/01
DOI：
10.1063/9.0000297
eISSN：
2158-3226
-
Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers
H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 58 (2) 2022/02/01
DOI：
10.1109/TMAG.2021.3078710
ISSN：
0018-9464
eISSN：
1941-0069
-
Effect of Magnetic Coupling between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer
K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V.A. Nguyen, T. Watanabe, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 58 (2) 2022/02/01
DOI：
10.1109/TMAG.2021.3083575
ISSN：
0018-9464
eISSN：
1941-0069
-
Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer
Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh
Physical Review B 105 (5) 2022/02/01
DOI：
10.1103/PhysRevB.105.054421
ISSN：
2469-9950
eISSN：
2469-9969
-
Nanometer-thin L1<inf>0</inf>-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties
Yutaro Takeuchi, Ryotaro Okuda, Junta Igarashi, Butsurin Jinnai, Takaharu Saino, Shoji Ikeda, Shunsuke Fukami, Hideo Ohno
Applied Physics Letters 120 (5) 2022/01/31
DOI：
10.1063/5.0077874
ISSN：
0003-6951
-
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability
K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, T. Tanigawa, S. Ikeda, T. Shinada, H. Koike, T. Endoh, T. Makino, T. Ohshima
IEEE International Reliability Physics Symposium Proceedings 2022-March P541-P545 2022
DOI：
10.1109/IRPS48227.2022.9764491
ISSN：
1541-7026
-
Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin-orbit torque devices
Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh
Applied Physics Letters 119 (14) 2021/10/04
DOI：
10.1063/5.0063317
ISSN：
0003-6951
-
Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers
Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Tetsuo Endoh
Physical Review B 104 (6) 2021/08/01
DOI：
10.1103/PhysRevB.104.064439
ISSN：
2469-9950
eISSN：
2469-9969
-
First Demonstration of 25-nm Quad Interface p-MTJ Device with Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V.A. Nguyen, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh
IEEE Transactions on Electron Devices 68 (6) 2680-2685 2021/06
DOI：
10.1109/TED.2021.3074103
ISSN：
0018-9383
eISSN：
1557-9646
-
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition
Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
IEEE Journal of Solid-State Circuits 56 (4) 1116-1128 2021/04
DOI：
10.1109/JSSC.2020.3039800
ISSN：
0018-9200
eISSN：
1558-173X
-
40 nm 1T-1MTJ 128 Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design
Hiroki Koike, Takaho Tanigawa, Toshinari Watanabe, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Toru Yoshiduka, Yitao Ma, Hiroaki Honjo, Koichi Nishioka, Sadahiko Miura, Hirofumi Inoue, Shoji Ikeda, Tetsuo Endoh
IEEE Transactions on Magnetics 57 (3) 2021/03
DOI：
10.1109/TMAG.2020.3038110
ISSN：
0018-9464
eISSN：
1941-0069
-
Structural Analysis of CoFeB/MgO-Based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography
M. Niwa, K. Kimura, T. Naijo, A. Oshurahunov, S. Nagamachi, H. Inoue, H. Honjo, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 57 (2) 2021/02
DOI：
10.1109/TMAG.2020.3008436
ISSN：
0018-9464
eISSN：
1941-0069
-
Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis
H. Honjo, H. Naganuma, T. V.A. Nguyen, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh
AIP Advances 11 (2) 2021/02/01
DOI：
10.1063/9.0000047
eISSN：
2158-3226
-
W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer
Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Tetsuo Endoh
AIP Advances 11 (2) 2021/02/01
DOI：
10.1063/9.0000011
eISSN：
2158-3226
-
Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability
K. Nishioka, H. Honjo, H. Naganuma, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh
AIP Advances 11 (2) 2021/02/01
DOI：
10.1063/9.0000048
eISSN：
2158-3226
-
Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm
H. Naganuma, S. Miura, H. Honjo, K. Nishioka, T. Watanabe, T. Nasuno, H. Inoue, T. V.A. Nguyen, Y. Endo, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh
Digest of Technical Papers - Symposium on VLSI Technology 2021-June 2021
ISSN：
0743-1562
-
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹
Sadahiko Miura, Koichi Nishioka, Hiroshi Naganuma, T. V.A. Nguyen, Hiroaki Honjo, Shoji Ikeda, Toshinari Watanabe, Hirofumi Inoue, Masaaki Niwa, Takaho Tanigawa, Yasuo Noguchi, Toru Yoshizuka, Mitsuo Yasuhira, Tetsuo Endoh
IEEE Transactions on Electron Devices 67 (12) 5368-5373 2020/12
DOI：
10.1109/TED.2020.3025749
ISSN：
0018-9383
eISSN：
1557-9646
-
Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice
Hiroki KOIKE, Takaho TANIGAWA, Toshinari WATANABE, Takashi NASUNO, Yasuo NOGUCHI, Mitsuo YASUHIRA, Toru YOSHIDUKA, Yitao MA, Hiroaki HONJO, Koichi NISHIOKA, Sadahiko MIURA, Hirofumi INOUE, Shoji IKEDA, Tetsuo ENDOH
2020 IEEE 31st Magnetic Recording Conference (TMRC) 2020/08/17
Publisher:
IEEE
DOI：
10.1109/tmrc49521.2020.9366711
-
Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO Interface
H. Honjo, M. Niwa, K. Nishioka, T. V.A. Nguyen, H. Naganuma, Y. Endo, M. Yasuhira, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 56 (8) 2020/08
DOI：
10.1109/TMAG.2020.3004576
ISSN：
0018-9464
eISSN：
1941-0069
-
Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions
Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh
AIP Advances 2020/07/01
DOI：
10.1063/5.0007499
-
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
Peer-reviewed
M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu
VLSI Symposium 2020-June 2020/06
DOI：
10.1109/VLSICircuits18222.2020.9162774
-
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance > 10^11
Peer-reviewed
S. Miura, K. Nishioka, H. Naganuma, T. V. A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, T. Endoh
VLSI Symposium 2020/06
-
Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM
Invited
Peer-reviewed
VLSI Symposium 2020/06
-
Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming side wall damages in perpendicular magnetized magnetic tunnel junctions
Peer-reviewed
Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh
AIP Advanced 2020/06
-
Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction
Peer-reviewed
Masaaki Niwa, Hiroaki Honjo, Loku Singgappulige Rosantha Kumara, Hirofumi Inoue, Shoji Ikeda, Hiroo Tajiri, Tetsuo Endoh
Journal of Vacuum Science & Technology B 38 (3) 033801-033801 2020/05
DOI：
10.1116/1.5144850
ISSN：
2166-2746
eISSN：
2166-2754
-
A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching
Peer-reviewed
Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Endoh
Japanease Journal of Applied Physics 2020/02
-
Magnetic properties of Co film in Pt/Co/Cr<inf>2</inf>O<inf>3</inf>/Pt structure
Peer-reviewed
T. V.A. Nguyen, Y. Shiratsuchi, H. Sato, S. Ikeda, T. Endoh, Y. Endo
AIP Advances 10 (1) 015152-1-015152-5 2020/01/01
DOI：
10.1063/1.5130439
eISSN：
2158-3226
-
Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers
H. Honjo, T. V. A. Nguyen, M. Yasuhira, M. Niwa, S. Ikeda, H. Sato, T. Endoh
AIP Advances 9 (12) 125330-125330 2019/12/01
Publisher:
AIP Publishing
DOI：
10.1063/1.5129794
eISSN：
2158-3226
-
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology
Peer-reviewed
H. Honjo, T. V.A. Nguyen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, T. Endoh
Technical Digest - International Electron Devices Meeting, IEDM 2019-December 2019/12
DOI：
10.1109/IEDM19573.2019.8993443
ISSN：
0163-1918
-
Spin Hall effect investigated by spin Hall magnetoresistance in Pt100−xAux/CoFeB systems
Peer-reviewed
SAITO Yoshiaki
AIP Advances 9 125312-1-125312-5 2019/12
DOI：
10.1063/1.5129889
-
A novel memory test system with an electromagnet for STT-MRAM testing
R. Tamura, N. Watanabe, H. Koike, H. Sato, S. Ikeda, T. Endoh, S. Sato
NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019 2019/10/01
Publisher:
Institute of Electrical and Electronics Engineers Inc.
DOI：
10.1109/NVMTS47818.2019.8986200
-
Effect of surface modification treatment for buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions
Peer-reviewed
H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, T. Endoh
Journal of Applied Physics 126 113902 2019/09
DOI：
10.1063/1.5112017
-
Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction
Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Mitsuo Yasuhira, Tetsuo Endoh
IEEE Transactions on Magnetics 55 2019/07/01
DOI：
10.1109/TMAG.2019.2897067
ISSN：
0018-9464
-
Novel Quad Interface MTJ Technology and Its First Demonstration with High Thermal Stability and Switching Efficiency for STT-MRAM Beyond 2Xnm
Peer-reviewed
K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, T. Endoh
2019 Symposia on VLSI Technology and Circuits 2019/06
DOI：
10.23919/VLSIT.2019.8776499
-
Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy
Peer-reviewed
Masaaki Niwa, Akira Yasui, Eiji Ikenaga, Hiroaki Honjo, Shoji Ikeda, Tetsuya Nakamura, Tetsuo Endoh
Journal of Applied Physics 125 (203903) 2019/05
DOI：
10.1063/1.5094067
-
12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz
Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
Digest of Technical Papers - IEEE International Solid-State Circuits Conference 2019-February 202-204 2019/03/06
DOI：
10.1109/ISSCC.2019.8662431
ISSN：
0193-6530
-
A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications.
Peer-reviewed
Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
J. Solid-State Circuits 54 (11) 2991-3004 2019
DOI：
10.1109/JSSC.2019.2930910
-
Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W <inf>100-x</inf> Ta <inf>x</inf> /CoFeB systems
Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Hideo Sato, Tetsuo Endoh
Applied Physics Express 12 2019/01/01
DOI：
10.7567/1882-0786/ab1a66
ISSN：
1882-0778
-
A Fully Nonvolatile Microcontroller Unit with Embedded STT-MRAM and FPGA-Based Accelerator for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology
Peer-reviewed
M. Natsui, D. Suzuki, A. Tamakoshi, T. Watanabe, H. Honjo, H. Koike, T. Nasuno, Y. Ma, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu
IEEE Journal of Solid State Circuits 2019
DOI：
10.1109/JSSC.2019.2930910
-
Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double CoFeB/MgO Interface Magnetic Tunnel Junctions
Peer-reviewed
S.Miura, H.Sato, S.Ikeda, K. Nishioka, H.Honjo, T.Endoh
IEEE. Transaction on Magnetics 2019
DOI：
10.1109/TMAG.2019.2901841
-
14ns write speed 128Mb density Embedded STT-MRAM with endurance>10^10 and 10yrs retention @85°C using novel low damage MTJ integration process
Peer-reviewed
H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, S. Ikeda, S.- Y. Kang, T. Kubo, K. Yamashita, Y. Yagi, R. Tamura, T. Endoh
International Electron Devise Meeting 2018/12
DOI：
10.1109/IEDM.2018.8614606
-
STEM tomography study on structural features induced by MTJ processingi
Peer-reviewed
Masaaki Niwa, Kosuke Kimura, Toshinari Watanabe, Takanori Naijou, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endoh
Applied Physics A 124 (724) 2018/10
DOI：
10.1007/s00339-018-2144-x
ISSN：
0947-8396
-
1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning
Peer-reviewed
Hideo Sato, Toshinari Watanabe, Hiroki Koike, Takashi Saito, Sadahiko Miura, Hiroaki Honjo, Hirofumi Inoue, Shoji Ikeda, Yasuo Noguchi, Takaho Tanigawa, Mitsuo Yasuhira, Hideo Ohno, Song Yun Kang, Takuya Kubo, Koichi Takatsuki, Koji Yamashita, Yasushi Yagi, Ryo Tamura, Takuro Nishimura, Koh Murata, Tetsuo Endoh
2018 IEEE International Memory Workshop (IMW) 2018/05
Publisher:
IEEE
DOI：
10.1109/imw.2018.8388774
-
Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ
Peer-reviewed
Saito Takashi, Ito Kenchi, Honjo Hiroaki, Ikeda Shoji, Endoh Tetsuo
IEEE TRANSACTIONS ON MAGNETICS 54 (4) 2018/04
DOI：
10.1109/TMAG.2017.2688440
ISSN：
0018-9464
-
Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers
Kyota Watanabe, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8) 2017/08
DOI：
10.7567/JJAP.56.0802B2
ISSN：
0021-4922
eISSN：
1347-4065
-
Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm
Hideo Sato, Shoji Ikeda, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8) 2017/08
DOI：
10.7567/JJAP.56.0802A6
ISSN：
0021-4922
eISSN：
1347-4065
-
Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm
Yuzuru Narita, Yutaka Takahashi, Masahide Harada, Kenichi Oikawa, Daisuke Kobayashi, Kazuyuki Hirose, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8) 2017/08
DOI：
10.7567/JJAP.56.0802B3
ISSN：
0021-4922
eISSN：
1347-4065
-
Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation
Daisuke Kobayashi, Kazuyuki Hirose, Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Shoji Ikeda, Hideo Sato, Eli Christopher Inocencio Enobio, Tetsuo Endoh, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8) 2017/08
DOI：
10.7567/JJAP.56.0802B4
ISSN：
0021-4922
eISSN：
1347-4065
-
Impact of tungsten sputtering condition on magnetic and transport properties of double-MgO magnetic tunneling junction with CoFeB/W/CoFeB free layer
Peer-reviewed
Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Koichi Nishioka, Toshinari Watanabe, Sadahiko Miura, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Hiroki Koike, Hirofumi Inoue, Masakazu Muraguchi, Masaaki Niwa, Hideo Ohno, Tetsuo Endoh
IEEE Transactions on Magnetics PP (99) 1-1 2017/05/05
DOI：
10.1109/TMAG.2017.2701838
-
Origin of variation of shift field via annealing at 400 degrees C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer
Peer-reviewed
H. Honjo, S. Ikeda, H. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh
AIP ADVANCES 7 (5) 2017/05
DOI：
10.1063/1.4973946
ISSN：
2158-3226
-
Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices
Peer-reviewed
Bean Jonathan J, Saito Mitsuhiro, Fukami Shunsuke, Sato Hideo, Ikeda Shoji, Ohno Hideo, Ikuhara Yuichi, McKenna Keith P
SCIENTIFIC REPORTS 7 2017/04/04
DOI：
10.1038/srep45594
ISSN：
2045-2322
-
A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching
Peer-reviewed
Yitao Ma, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 56 (4) 04CF08 2017/04
DOI：
10.7567/JJAP.56.04CF08
ISSN：
0021-4922
eISSN：
1347-4065
-
A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme
Peer-reviewed
Yitao Ma, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
Japanese Journal of Applied Physics 2017/04
DOI：
10.7567/JJAP.55.04EF15
-
Design of a variation-resilient single-ended non-volatile six-input lookup table circuit with a redundant-magnetic tunnel junction-based active load for smart Internet-of-things applications
Peer-reviewed
D. Suzuki, M. Natsui, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
ELECTRONICS LETTERS 53 (7) 2017/03
DOI：
10.1049/el.2016.4233
ISSN：
0013-5194
eISSN：
1350-911X
-
Beyond MRAM: Nonvolatile Logic-in-Memory VLSI
Peer-reviewed
Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno
Introduction to Magnetic Random-Access Memory 199-229 2016/11/26
Publisher:
wiley
DOI：
10.1002/9781119079415.ch7
-
Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing
Invited
Peer-reviewed
Takahiro Hanyu, Tetsuo Endoh, Daisuke Suzuki, Hiroki Koike, Yitao Ma, Naoya Onizawa, Masanori Natsui, Shoji Ikeda, Hideo Ohno
PROCEEDINGS OF THE IEEE 104 (10) 1844-1863 2016/10
DOI：
10.1109/JPROC.2016.2574939
ISSN：
0018-9219
eISSN：
1558-2256
-
A Compact and Ultra-Low-Power STT-MRAMBased Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching
Peer-reviewed
Y.Ma, S.Miura, H.Honjo, S.Ikeda, T.Hanyu, H.Ohno, T.Endoh
International Conference on Solid State Devices and Materials (SSDM) B-2-06 83-84 2016/09/26
-
Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition
Peer-reviewed
H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh
IEEE TRANSACTIONS ON MAGNETICS 52 (7) 2016/07
DOI：
10.1109/TMAG.2016.2518203
ISSN：
0018-9464
eISSN：
1941-0069
-
An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories
Invited
Peer-reviewed
Tetsuo Endoh, Hiroki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS 6 (2) 109-119 2016/06
DOI：
10.1109/JETCAS.2016.2547704
ISSN：
2156-3357
-
Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy
Peer-reviewed
Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa
JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 04EE05 2016/04
DOI：
10.7567/JJAP.55.04EE05
ISSN：
0021-4922
eISSN：
1347-4065
-
Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions
Peer-reviewed
Wang Zhongchang, Saito Mitsuhiro, McKenna Keith P, Fukami Shunsuke, Sato Hideo, Ikeda Shoji, Ohno Hideo, Ikuhara Yuichi
NANO LETTERS 16 (3) 1530-1536 2016/03
DOI：
10.1021/acs.nanolett.5b03627
ISSN：
1530-6984
-
Characterization of Leakage Spot Density in MgO Tunneling Barrier of Magnetic Tunneling Junction by Conductive AFM
Peer-reviewed
佐藤創志, 本庄弘明, 池田正二, 大野英男, 遠藤哲郎, 丹羽正昭
電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-（第21回研究会） 2016/01/22
-
スピントロニクスのデバイス応用
Invited
Peer-reviewed
遠藤哲郎, 小池洋紀, 池田正二, 羽生貴弘, 大野英男
電子情報通信学会論文誌 C J99-C (1) 1-9 2016/01/14
-
Optimum boron concentration difference between single and double CoFeB/MgO interface perpendicular MTJs with high thermal tolerance and its mechanism
Peer-reviewed
H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M.Yasuhira, T.Tanigawa, H.Koike, M.Muraguchi, M.Niwa, K.Ito, H.Ohno, T.Endoh
13th Joint MMM-Intermag Conference FB-06 2016/01/14
-
Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip
Peer-reviewed
Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Toshinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh
2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW) 2016
DOI：
10.1109/imw.2016.7495264
ISSN：
2330-7978
-
MTJ素子を活用した高性能・高信頼VLSI設計技術
Invited
Peer-reviewed
夏井雅典, 鈴木大輔, 池田正二, 遠藤哲郎, 大野英男, 羽生貴弘
応用物理学会スピントロニクス研究会・日本磁気学会スピンエレクトロニクス専門研究会・日本磁気学会ナノマグネティックス専門研究会共同主催研究会 2015/11/12
-
Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing
Peer-reviewed
Takahiro Hanyu, Masanori Natsui, Daisuke Suzuki, Akira Mochizuki, Naoya Onizawa, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 1-3 2015/10/05
DOI：
10.1109/S3S.2015.7333502
-
Optimization of CoFeB capping layer thickness for characterization of leakage spots in MgO tunneling barrier of magnetic tunnel junction
Peer-reviewed
S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa
2015 International Conference on Solid State Devices and Materials O-5-4 2015/09/29
-
垂直磁気異方性 CoFeB-MgO 磁気トンネル接合の高速中性子耐性評価(II)
Peer-reviewed
成田 克, 高橋 豊, 原田 正英, 大井 元貴, 及川 健一, 小林 大輔, 廣瀬 和之, 石川 慎也, E. C. I. Enobio, 佐藤 英夫, 池田 正二, 遠藤 哲郎, 大野 英男
第76回応用物理学会秋季学術講演会 2015/09/13
-
10 nm perpendicular anisotropy CoFeB-MgO magnetic tunnel junction with over 400oC high thermal tolerance by boron diffusion control
Peer-reviewed
H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh
2015 Symposia on VLSI technology 2015/06/18
DOI：
10.1109/VLSIT.2015.7223661
-
Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure
Peer-reviewed
D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
2015 Diguest of Technical Papers, Symp. VLSI Circuit 172-173 2015/06
-
Driving Force in Diffusion and Redistribution of Reducing Agents during Redox Reaction on the Surface of CoFeB Film
Peer-reviewed
S. Sato, H. Honjo, S. Ikeda, H. Ohno, M. Niwa, T. Endoh
IEEE. Transactions on Magnetics PP (99) 1 2015/05/19
DOI：
10.1109/TMAG.2015.2434840
-
1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance
Peer-reviewed
H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, M. Muraguchi, M. Niwa, K. Ito, S. Ikeda, H. Ohno, T. Endoh
2015 IEEE International Memory Workshop 1-4 2015/05/17
DOI：
10.1109/IMW.2015.7150264
-
Diffusion Behaviors Observed on the Surface of CoFeB Film after the Natural Oxidation and the Annealing
Peer-reviewed
S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa
2015 IEEE Magnetic Conference (INTERMAG2015) GP-01 2015/05/15
DOI：
10.1109/INTMAG.2015.7157496
-
不揮発ロジックインメモリアーキテクチャとその低電力VLSIシステムへの応用
Invited
Peer-reviewed
羽生貴弘, 鈴木大輔, 望月明, 夏井雅典, 鬼沢直哉, 杉林直彦, 池田正二, 遠藤哲郎, 大野英男
集積回路研究会 2015/04/17
-
In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis
Peer-reviewed
Eriko Hirayama, Shun Kanai, Koji Sato, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 04EM03 2015/04
DOI：
10.7567/JJAP.54.04DM03
ISSN：
0021-4922
eISSN：
1347-4065
-
Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom
Peer-reviewed
S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H. Koike, S. Ikeda, T. Endoh, H. Ohno
Japanese Journal of Applied Physics 54 04DM06-1-04DM06-4 2015/03/11
DOI：
10.7567/JJAP.54.04DM06
-
Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses
Watanabe Kyota, Ishikawa Shinya, Sato Hideo, Ikeda Shoji, Yamanouchi Michihiko, Fukami Shunsuke, Matsukura Fumihiro, Ohno Hideo
Jpn. J. Appl. Phys. 54 (4) 04DM04 2015/03/03
Publisher:
Institute of Physics
DOI：
10.7567/JJAP.54.04DM04
ISSN：
0021-4922
-
Spintronics: from basic research to VLSI application
Invited
Peer-reviewed
Shun Kanai, Fumihiro Matsukura, Shoji Ikeda, Hideo Sato, Shunsuke Fukami, Hideo Ohno
Association of Aisa Pacific Physical Societies, AAPPS 25 4-11 2015/02
DOI：
10.22661/AAPPSBL.2015.25.1.04
-
Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and Its Application to Motion-Vector Prediction
Peer-reviewed
M. Natui, D. Suzuki, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
Journal of Solid State Circuit 50 (2) 476-189 2015/01/28
DOI：
10.1109/JSSC.2014.2362853
-
Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing
Peer-reviewed
Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa
Applied Physics Letter 2015
DOI：
10.1063/1.4917277
-
Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation
Peer-reviewed
Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
Japanese Journal of Appllied Physics 2015
DOI：
10.7567/JJAP.54.04DE08
-
磁気ランダムアクセスメモリ（MRAM）の最新技術動向
Invited
Peer-reviewed
小池洋紀, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎
CVD研究会 2014/12/18
-
Challenge of MOS/MTJ-Hybrid Nonvolatile Logic-in-Memory Architecture in Dark-Silicon Era
Invited
Peer-reviewed
Takahiro Hanyu, Daisuke Suzuki, Akira Mochizuki, Masanori Natsui, Naoya Onizawa, Tadahiko Sugibayashi, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno
2014 IEEE International Electron Devices Meeting (IEDM2014) 28.2.1-28.2.3 2014/12
DOI：
10.1109/IEDM.2014.7047124
-
Domain Wall Motion Device for Nonvolatile Memory and Logic - Size Dependence of Device Properties
Peer-reviewed
Shunsuke Fukami, Michihiko Yamanouchi, Shoji Ikeda, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 50 (11) 6971556 2014/11
DOI：
10.1109/TMAG.2014.2321396
ISSN：
0018-9464
eISSN：
1941-0069
-
Process-induced damage and its recovery for a CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy axis
Peer-reviewed
Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Hideo Sato, Kotaro Mizunuma, Keiichi Tokutome, Michio Murahata, Shoji Ikeda, Sadahiko Miura, Naoki Kasai, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (10) 2014/10
DOI：
10.7567/JJAP.53.103001
ISSN：
0021-4922
eISSN：
1347-4065
-
A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit
Peer-reviewed
T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
International Conference on Solid State Dvices and Materails (SSDM) A-8-3 2014/09/09
-
A Power-gated 32bit MPU with a Power Controller Circuit Activated by Deep-sleep-mode Instraction Achieving Ultra-low Power Operation
Peer-reviewed
H. Koike, T. Ohsawa, S. Miura, H. Honjo, K, Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
International Conference on Solid State Dvices and Materails (SSDM) A-7-1 2014/09/09
-
Properties of Perpendicular-Anisotrapy Magnetic Tunnel Junctions Fabricated over the Cu Via
Peer-reviewed
S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H, Koike, S. Ikeda, T. Endoh, H. Ohno
International Conference on Solid State Dvices and Materails (SSDM) A-6-3 2014/09/09
-
Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions
Peer-reviewed
Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanouchi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno
IEEE TRANSACTIONS ON NUCLEAR SCIENCE 61 (4) 1710-1716 2014/08
DOI：
10.1109/TNS.2014.2304738
ISSN：
0018-9499
eISSN：
1558-1578
-
Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance
Peer-reviewed
A. Okada, S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 105 (5) 052415-(1)-052415-(4) 2014/08
DOI：
10.1063/1.4892824
ISSN：
0003-6951
eISSN：
1077-3118
-
Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
Peer-reviewed
H. Sato, E. C. I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 105 (6) 062403(1)-062403(4) 2014/08
DOI：
10.1063/1.4892924
ISSN：
0003-6951
eISSN：
1077-3118
-
Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis
Peer-reviewed
C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno
JOURNAL OF APPLIED PHYSICS 115 (17) 17C714 2014/05
DOI：
10.1063/1.4863260
ISSN：
0021-8979
eISSN：
1089-7550
-
Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect
Peer-reviewed
S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, H. Sato, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 104 (21) 212406(1)-212406(3) 2014/05
DOI：
10.1063/1.4880720
ISSN：
0003-6951
eISSN：
1077-3118
-
Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer
Peer-reviewed
S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno
JOURNAL OF APPLIED PHYSICS 115 (17) 17C719(1)-17C719(3) 2014/05
DOI：
10.1063/1.4862724
ISSN：
0021-8979
eISSN：
1089-7550
-
Distribution of critical current density for magnetic domain wall motion
Peer-reviewed
S. Fukami, M. Yamanouchi, Y. Nakatani, K. -J. Kim, T. Koyama, D. Chiba, S. Ikeda, N. Kasai, T. Ono, H. Ohno
JOURNAL OF APPLIED PHYSICS 115 (17) 17D508(1)-17D508(3) 2014/05
DOI：
10.1063/1.4866394
ISSN：
0021-8979
eISSN：
1089-7550
-
Studies on read-stability and write-ability of fast access STT-MRAMs
Peer-reviewed
T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) 1-2 2014/04/28
DOI：
10.1109/VLSI-TSA.2014.6839665
-
A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions
Peer-reviewed
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (4) 2014/04
DOI：
10.7567/JJAP.53.04ED03
ISSN：
0021-4922
eISSN：
1347-4065
-
Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories
Peer-reviewed
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (4) 2014/04
DOI：
10.7567/JJAP.53.04ED04
ISSN：
0021-4922
eISSN：
1347-4065
-
Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs
Peer-reviewed
Hideo Sato, Shoji Ikeda, Shunsuke Fukami, Hiroaki Honjo, Shinya Ishikawa, Michihiko Yamanouchi, Kotaro Mizunuma, Fumihiro Matsukura, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (4) 04EM02(1)-04EM02(3) 2014/04
DOI：
10.7567/JJAP.53.04EM02
ISSN：
0021-4922
eISSN：
1347-4065
-
MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability
Peer-reviewed
H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno
Journal of the Magnetics Society of Japan 38 (No. 2-2) 56-60 2014/03/20
Publisher:
DOI：
10.3379/msjmag.1403R002
ISSN：
1882-2924
-
Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion
Peer-reviewed
Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Ryusuke Nebashi, Keiichi Tokutome, Michio Murahata, Sadahiko Miura, Naoki Kasai, Shoji Ikeda, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (3) 2014/03
DOI：
10.7567/JJAP.53.03DF03
ISSN：
0021-4922
eISSN：
1347-4065
-
Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell
Peer-reviewed
Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
Japanese Journal of Applied Physics(JJAP) 53 (4S) 04ED13-1-04ED13-7 2014/03/01
DOI：
10.7567/JJAP.53.04ED13
-
Design and Fabrication of a Perpendicular-MTJ-Based Nonvolatile Programmable Switch Achieving 40% Less Area Using Shared-Control Transistor Structure
Peer-reviewed
Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Journal of Applied Physics 115 (17) 17B742-1-17B742-3 2014/03
DOI：
10.1063/1.4868332
-
Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches
Peer-reviewed
T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
Journal of Applied Physics (JAP) 115 (17) 17C728-1-17C728-3 2014/02/01
DOI：
10.1063/1.4867129
-
Journal of Applied Physics
Peer-reviewed
C. Zhang, M. Yamanouchi, H .Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno
Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis 115 17C714(1)-17C714(3) 2014/01/29
-
Advances in spintronics devices for microelectronics - From spin-transfer torque to spin-orbit torque
Peer-reviewed
S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno
Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC 684-691 2014
DOI：
10.1109/ASPDAC.2014.6742970
ISSN：
2153-6961
-
Electric Field-Induced Magnetization Switching in CoFeB-MgO-Static Magnetic Field Angle Dependence
Peer-reviewed
Shun Kanai, Michihiko Yamanouchi, Shoji Ikeda, Yoshinobu Nakatani, Fumihiro Matsukura, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 50 (1) article number 4200103 2014/01
DOI：
10.1109/TMAG.2013.2278559
ISSN：
0018-9464
eISSN：
1941-0069
-
Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm
Peer-reviewed
S. Ikeda, H. Sato, H. Honjo, E. C. I. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh, H. Ohno
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 796-799 2014
DOI：
10.1109/IEDM.2014.7047160
-
A 1Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell with 32b Fine-Grained Power Gating Scheme
Peer-reviewed
T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H. Ohno
IEEE Journal of Solid State Circuits 48 (6) 2014
DOI：
10.1109/JSSC.2013.2253412
-
IEEE Transactions on Magnetics
Peer-reviewed
S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, H. Ohno
Electric field-induced magnetization switching in CoFeB-MgO-static magnetic field angle dependence 50 (1) 4200103(1)-4200103(3) 2014/01
-
Applied Physics Express
Peer-reviewed
L. Chen, S. Ikeda, F. Matsukura, H. Ohno
DC voltages in Py and Py/Pt under ferromagnetic resonance 7 013002(1)-013002(4) 2014/01
-
Applied Physics Letters
Peer-reviewed
C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno
Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO 103 262407(1)-262407(3) 2013/12/31
-
DC voltages in Py and Py/Pt under ferromagnetic resonance
Chen Lin, Ikeda Shoji, Matsukura Fumihiro, Ohno Hideo
Appl. Phys. Express 7 (1) 13002-13002 2013/12/30
Publisher:
Institute of Physics
DOI：
10.7567/APEX.7.013002
ISSN：
1882-0778
-
Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO
Peer-reviewed
Chaoliang Zhang, Michihiko Yamanouchi, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno
APPLIED PHYSICS LETTERS 103 (26) 262407 2013/12
DOI：
10.1063/1.4859656
ISSN：
0003-6951
eISSN：
1077-3118
-
Trend of TMR and Variation in Vth for Keeping Data Load Robustness of MOS/MTJ Hybrid Latches
Peer-reviewed
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
The 58th Annual Magnetism and Magnetic Materials Conference (MMM2013) GT-10 693-693 2013/11/04
-
MTJ resistance distribution and its bit error rate of 1-kbit 1T-1MTJ STT-MRAM cell arrays fabricated on a 300-mm wafer
Peer-reviewed
H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno
58th Annual Conference on Magnetism & Magnetic Materials Abstract 2013/11
-
Strategy of STT-MRAM Cell Design and Its Power Gating Technique for Low-Voltage and Low-Power Cache Memories
Peer-reviewed
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 International Conference on Solid State Devices and Materials (SSDM) M-7-1 1090-1091 2013/09/24
-
Studies on Selective Devices for Spin-Transfer-Torque Magnetic Tunnel Junctions
Peer-reviewed
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 International Conference on Solid State Devices and Materials (SSDM) M-8-4 1104-1105 2013/09/24
-
Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process
Peer-reviewed
S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, N. Kasai, S. Ikeda, T. Endoh, H. Ohno
2013 International Conference on Solid State Devices and Materials (SSDM) PS-12-11 396-397 2013/09/24
-
A 4x4 Nonvolatile Multiplier Using Novel MTJ-CMOS Hybrid Latch and Flip-Flop
Peer-reviewed
Takashi Ohsawa, Sadahiro Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 International Conference on Solid State Devices and Materials (SSDM) M-6-3 1086-1087 2013/09/24
-
Wide Operational Margin Capability of 1kbit STT-MRAM Array Chip with 1-PMOS and 1-Bottom-Pin-MTJ Type Cell
Peer-reviewed
Hiroki Koike, Takashi Ohsawa, Sadahiro Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 International Conference on Solid State Devices and Materials (SSDM) M-7-3 1094-1095 2013/09/24
-
Applied Physics Letters
Peer-reviewed
S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno
In-plane magnetic field dependence of electric field-induced magnetization switching 103 072408(1)-072408(4) 2013/08/16
-
Nature Communications
Peer-reviewed
S. Fukami, M. Yamanouchi, S. Ikeda, H. Ohno
Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents 4 1-7 2013/08/15
-
In-plane magnetic field dependence of electric field-induced magnetization switching
Peer-reviewed
S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 103 (7) 072408-072408(4) 2013/08
DOI：
10.1063/1.4818676
ISSN：
0003-6951
-
Applied Physics Express
Peer-reviewed
S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, H. Ohno
CoNi films with perpendicular magnetic anisotropy prepared by alternate monoatomic layer deposition 6 073010(1)-073010(3) 2013/07/09
-
IEEE Transactions on Magnetics
Peer-reviewed
H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno
MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis 49 (7) 4437-4440 2013/07/07
-
CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition
Peer-reviewed
Shunsuke Fukami, Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Hideo Ohno
APPLIED PHYSICS EXPRESS 6 (7) 073010 2013/07
DOI：
10.7567/APEX.6.073010
ISSN：
1882-0778
-
Size Dependence of Magnetic Properties of Nanoscale CoFeB--MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance
Mizunuma Kotaro, Yamanouchi Michihiko, Sato Hideo, Ikeda Shoji, Kanai Shun, Matsukura Fumihiro, Ohno Hideo
Applied Physics Express 6 (6) 63002-063002-3 2013/06/25
Publisher:
The Japan Society of Applied Physics
DOI：
10.7567/APEX.6.063002
ISSN：
1882-0778
-
IEEE Journal of Solid-State Circuits
Peer-reviewed
T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme 48 (6) 1511-1520 2013/06/22
-
Applied Physics Letters
Peer-reviewed
J. Sinha, M. Hayashi, A. J. Kellock, S. Fukami, M. Yamanouchi, H. Sato, S. Ikeda, S. Mitani, S. H. Yang, S. S. P. Parkin, H. Ohno
Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers 102 l 242405(1)-l 242405(4) 2013/06/18
-
A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories
Peer-reviewed
Takashi Ohsawa, Sadahiro Miura, Keizo Kinoshita, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 Symposium on VLSI Technology (VLSIT) & 2013 Symposium on VLSI Cricuit (VLSIC) Digest of Technical Papers C110-C111 2013/06/12
-
Applied Physics Letters
Peer-reviewed
S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, H. Ohno
Electrical endurance of Co/Ni wire for magnetic domain wall motion device 102 222410(1)-222410(4) 2013/06/06
-
A Model Reflecting Preheat Effect by Two-step Writing Technique for High Speed and Stable STT-MRAM
Peer-reviewed
Yasuhiro Yoshida, Hiroki Koike, Masakazu Muraguchi, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
16th International Workshop on Computational Electronics (IWCE) 248-249 2013/06/04
-
Enhanced interface perpendicular magnetic anisotropy in Ta vertical bar CoFeB vertical bar MgO using nitrogen doped Ta underlayers
Peer-reviewed
Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Seiji Mitani, See-hun Yang, Stuart S. P. Parkin, Hideo Ohno
APPLIED PHYSICS LETTERS 102 (24) 2013/06
DOI：
10.1063/1.4811269
ISSN：
0003-6951
-
Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine
Peer-reviewed
S. Matsunaga, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, M. Natsui, A. Mochizuki, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
2013 Symposium on VLSI Circuits Digest of Technical Papers 106-107 2013/06
-
Applied Physics Letters
Peer-reviewed
M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, S. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno
Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper 102 212408(1)-212408(4) 2013/05/30
-
Applied Physics Express
Peer-reviewed
K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, H. Ohno
Size dependence of magnetic properties of nanoscale CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic easy axis observed by ferromagnetic resonance 6 063002(1)-063002(3) 2013/05/22
-
Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer
Peer-reviewed
S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno
Journal of Applied Physics 113 (17) 17C721 2013/05/07
DOI：
10.1063/1.4798499
ISSN：
0021-8979
eISSN：
1089-7550
-
Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper
Peer-reviewed
Michihiko Yamanouchi, Lin Chen, Junyeon Kim, Masamitsu Hayashi, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno
APPLIED PHYSICS LETTERS 102 (21) 212408 2013/05
DOI：
10.1063/1.4808033
ISSN：
0003-6951
-
Journal of Applied Physics
Peer-reviewed
S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno
Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer 113 17C721(1)-17C721(3) 2013/04/03
-
Nonvolatile Logic-in-Memory Array Processor in 90nm MTJ/MOS Achieving 75% Leakage Reduction Using Cycle-Based Power Gating
Peer-reviewed
M. Natsui, D. Suzuki, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
2013 IEEE International Solid-State Circuits Conference (ISSCC) 194-195 2013/02
DOI：
10.1109/ISSCC.2013.6487696
-
Two-step writing method for STT-MTJ to improve switching probability and write-speed
Peer-reviewed
Fumitaka Iga, Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
The 3nd CSIS International Symposium on Spintronics-based VLSIs 2013/01/31
-
600MHz Nonvolatile Latch Based on a New MTJ/CMOS Hybrid Circuit Concept
Peer-reviewed
Tetsuo Endoh, Shuta Togashi, Fumitaka Iga, Yasuhiro Yoshida, Takashi Ohsawa, Hiroki Koike, Shunsuke Fukami, Shoji Ikeda, Naoki Kasai, Noboru Sakimura, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
The 3nd CSIS International Symposium on Spintronics-based VLSIs 2013/01/31
-
A fine-grained power gating architecture for MTJ-based embedded memories
Peer-reviewed
Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
The 3nd CSIS International Symposium on Spintronics-based VLSIs 2013/01/31
-
A Power-Gated MPU with 3-microsecond Entry/Exit Delay using MTJ-Based Nonvolatile Flip-Flop
Peer-reviewed
H. Koike, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, S. Miura, H. Honjo, T. Sugibayashi
PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC) 317-320 2013
-
Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission (vol 101, 202402, 2012)
Peer-reviewed
A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S. -H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, C. S. Fadley
APPLIED PHYSICS LETTERS 102 (1) 019901 2013/01
DOI：
10.1063/1.4773064
ISSN：
0003-6951
eISSN：
1077-3118
-
Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm
Peer-reviewed
H. Sato, T. Yamamoto, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F. Matsukura, N. Kasai, H. Ohno
Technical Digest - International Electron Devices Meeting, IEDM 6724550 2013
DOI：
10.1109/IEDM.2013.6724550
ISSN：
0163-1918
-
20-nm magnetic domain wall motion memory with ultralow-power operation
Peer-reviewed
S. Fukami, M. Yamanouchi, K. J. Kim, T. Suzuki, N. Sakimura, D. Chiba, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, H. Ohno
Technical Digest - International Electron Devices Meeting, IEDM 6724553 2013
DOI：
10.1109/IEDM.2013.6724553
ISSN：
0163-1918
-
MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis
Peer-reviewed
Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno
IEEE Transactions on Magnetics 49 (7) 4437-4440 2013
DOI：
10.1109/TMAG.2013.2251326
ISSN：
0018-9464
eISSN：
1941-0069
-
Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents
Peer-reviewed
S. Fukami, M. Yamanouchi, S. Ikeda, H. Ohno
Nature Communications 4 2293 2013
DOI：
10.1038/ncomms3293
ISSN：
2041-1723
eISSN：
2041-1723
-
A 1-Mb STT-MRAM with Zero-Array Standby Power and 1.5-ns Quick Wake-Up by 8-b Fine-Grained Power Gating
Peer-reviewed
Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) 80-83 2013
-
Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications
Peer-reviewed
D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
IEICE Electronics Express 10 (23) 20130772 2013
DOI：
10.1587/elex.10.20130772
-
Electrical endurance of Co/Ni wire for magnetic domain wall motion device
Peer-reviewed
S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, H. Ohno
Applied Physics Letter 102 222410 2013
DOI：
10.1063/1.4809734
-
Spin
Peer-reviewed
S. Ikeda, H. Sato, M. Yamanouchi, H. Gan, K. Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, N. Kasai, H. Ohno
Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI 2 (3) 1240003(1)-1240003(12) 2012/12/04
DOI：
10.4018/ijfsa.2012070101
-
Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions
Peer-reviewed
Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanocuhi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno
JOURNAL OF LATEX CLASS FILES 11 (4) 1-3 2012/12/01
-
Applied Physics Letters
Peer-reviewed
A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S. H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, C. S. Fadley
Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission 101 202402(1)-202402(4) 2012/11/12
-
Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission
Peer-reviewed
A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S. -H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, C. S. Fadley
APPLIED PHYSICS LETTERS 101 (20) 202402 2012/11
DOI：
10.1063/1.4766351
ISSN：
0003-6951
eISSN：
1077-3118
-
Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures
Peer-reviewed
Shoji Ikeda, Ryohei Koizumi, Hideo Sato, Michihiko Yamanouchi, Katsuya Miura, Kotaro Mizunuma, Huadong Gan, Fumihiro Matsukura, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 48 (11) 3829-3832 2012/11
DOI：
10.1109/TMAG.2012.2203588
ISSN：
0018-9464
-
IEEE Transactions on Magnetics
Peer-reviewed
S. Ikeda, R. Koizumi, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. Gan, F. Matsukura, H. Ohno
Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO/CoFe(B) based stack structures 48 (11) 3829-3832 2012/11
-
Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile vlsi
Peer-reviewed
Shoji Ikeda, Hideo Sato, Michihiko Yamanouchi, Huadong Gan, Katsuya Miura, Kotaro Mizunuma, Shun Kanai, Shunsuke Fukami, Fumihiro Matsukura, Naoki Kasai, Hideo Ohno
SPIN 2 (3) 1240003 2012/09/01
DOI：
10.1142/S2010324712400036
ISSN：
2010-3247
eISSN：
2010-3255
-
Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars
Invited
Peer-reviewed
D. Marko, T. Devolder, K. Miura, K. Ito, Joo-Von Kim, C. Chappert, S. Ikeda, H. Ohno
JOURNAL OF APPLIED PHYSICS 112 (5) 053922(1)-053922(4) 2012/09
DOI：
10.1063/1.4751025
ISSN：
0021-8979
-
Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
Invited
Peer-reviewed
S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 101 (12) 122403(1)-122403(3) 2012/09
DOI：
10.1063/1.4753816
ISSN：
0003-6951
-
Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions
Peer-reviewed
Keizo Kinoshita, Tadashi Yamamoto, Hiroaki Honjo, Naoki Kasai, Shoji Ikeda, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 51 (8) 08HA01(1)-08HA01(6) 2012/08
DOI：
10.1143/JJAP.51.08HA01
ISSN：
0021-4922
eISSN：
1347-4065
-
Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device
Peer-reviewed
Shunsuke Fukami, Nobuyuki Ishiwata, Naoki Kasai, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 48 (7) 2152-2157 2012/07
DOI：
10.1109/TMAG.2012.2187792
ISSN：
0018-9464
eISSN：
1941-0069
-
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
Peer-reviewed
H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 101 (2) 022414(1)-02414(4) 2012/07
DOI：
10.1063/1.4736727
ISSN：
0003-6951
-
1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique with 1.0ns/200ps Wake-up/Power-off Times
Peer-reviewed
T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Tokutome, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
2012 Symposium on VLSI Circuits, Digest of Technical Papers J-C6.3 46-47 2012/06
DOI：
10.1109/VLSIC.2012.6243782
-
A 3.14 um^2 4T-2MTJ-Cell Fully Parallel TCAM Based on Nonvolatile Logic-in-Memory Architecture
Peer-reviewed
Shoun Matsunaga, Sadahiko Miura, Hiroaki Honjou, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
2012 Symposium on VLSI Circuits, Digest of Technical Papers J-C6.2 44-45 2012/06
DOI：
10.1109/VLSIC.2012.6243781
-
MTJ based non volatile SRAM and low power non volatile logic-in-memory architecture
Invited
Peer-reviewed
Tetsuo Endoh, Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Naoki Kasai, Hideo Ohno
IEEE International Magnetics Conference (INTERMAG2012) HB-06-HB-06 2012/05/09
-
Dependence of Magnetic Anisotropy in Co20Fe60B20 Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis
Peer-reviewed
Hiroyuki Yamamoto, Jun Hayakawa, Katsuya Miura, Kenchi Ito, Hideyuki Matsuoka, Shoji Ikeda, Hideo Ohno
APPLIED PHYSICS EXPRESS 5 (5) 053002(1)-053002(3) 2012/05
DOI：
10.1143/APEX.5.053002
ISSN：
1882-0778
-
Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures
Peer-reviewed
S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, H. D. Gan, S. Ikeda, H. Ohno
JOURNAL OF APPLIED PHYSICS 111 (8) 083922(1)-083922(8) 2012/04
DOI：
10.1063/1.4707964
ISSN：
0021-8979
eISSN：
1089-7550
-
Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme
IGA FUMITAKA, YOSHIDA YASUHIRO, IKEDA SHOJI, HANYU TAKAHIRO, OHNO HIDEO, ENDOH TETSUO
Jpn J Appl Phys 51 (2,Issue 2) 02BM02.1-02BM02.5 2012/02/25
DOI：
10.1143/JJAP.51.02BM02
ISSN：
0021-4922
-
High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
Peer-reviewed
Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 51 (2) 02BD01(1)-02BD01(6) 2012/02
DOI：
10.1143/JJAP.51.02BD01
ISSN：
0021-4922
-
Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions
Peer-reviewed
M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, H. Ohno
JOURNAL OF APPLIED PHYSICS 111 (4) 043913(1)-043913(3) 2012/02
DOI：
10.1063/1.3688039
ISSN：
0021-8979
eISSN：
1089-7550
-
Implementation of a Perpendicular MTJ-Based Read-Disturb-Tolerant 2T-2R Nonvolatile TCAM Based on a Reversed Current Reading Scheme
Peer-reviewed
S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, T. Hanyu
2012 17TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC) Session D1-5 475-476 2012
DOI：
10.1109/ASPDAC.2012.6164998
ISSN：
2153-6961
-
High-speed and reliable domain wall motion device: Material design for embedded memory and logic application
Peer-reviewed
Fukami, S.a, Yamanouchi, M.a, Koyama, T, Ueda, K, Yoshimura, Y, Kim, K.-J, Chiba, D.b c, Honjo, H, Sakimura, N, Nebashi, R, Kato, Y, Tsuji, Y, Morioka, A, Kinoshita, K, Miura, S, Suzuki, T.e, Tanigawa, H.e, Ikeda, S, Sugibayashi, T, Kasai, N.a, Ono, T, Ohno, H.a f
Dig Tech Pap Symp VLSI Technol 6242461 2012
DOI：
10.1109/VLSIT.2012.6242461
-
CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
Peer-reviewed
H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, H. Ohno
IEEE MAGNETICS LETTERS 3 3000204(1)-3000204(4) 2012
DOI：
10.1109/LMAG.2012.2190722
ISSN：
1949-307X
-
Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions
Peer-reviewed
H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 99 (25) 252507 2011/12
DOI：
10.1063/1.3671669
ISSN：
0003-6951
-
Reduction of intrinsic critical current density under a magnetic field along the hard axis of a free layer in a magnetic tunnel junction
Peer-reviewed
Miura Katsuya, Sugano Ryoko, Ichimura Masahiko, Hayakawa Jun, Ikeda Shoji, Ohno Hideo, Maekawa Sadamichi
Physical Review B 84 (17) 2011/11/23
DOI：
10.1103/PhysRevB.84.174434
ISSN：
1098-0121
-
Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin -Transfer -Torque (STT) MTJs
Peer-reviewed
Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda, Takahiro, Hanyu, Hideo Ohno, Testuo Endoh
2011 International Conference on Solid State Devices and Materials (SSDM2011) 959-960 2011/09/28
-
Novel 2step Writing Method for STT-RAM to Improve Switching Probability and Write Speed
Peer-reviewed
Fumitaka. Iga, Yasuhiko Suzuki, Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
2011 International Conference on Solid State Devices and Materials (SSDM2011) 963-964 2011/09/28
-
Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
Peer-reviewed
H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 99 (4) 042501 2011/07
DOI：
10.1063/1.3617429
ISSN：
0003-6951
-
Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures
Peer-reviewed
Huadong Gan, Shoji Ikeda, Michihiko Yamanouchi, Katsuya Miura, Kotaro Mizunuma, Jun Hayakawa, Fumihiro Matsukura, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 47 (6) 1567-1570 2011/06
DOI：
10.1109/TMAG.2010.2104137
ISSN：
0018-9464
eISSN：
1941-0069
-
Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme
Peer-reviewed
Shoun Matsunaga, Masanori Natsui, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
JAPANESE JOURNAL OF APPLIED PHYSICS 50 (6) 063004-(1)-063004-(7) 2011/06
DOI：
10.1143/JJAP.50.063004
ISSN：
0021-4922
-
Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure
Peer-reviewed
M. Yamanouchi, R. Koizumi, S. Ikeda, H. Sato, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, H. Ohno
JOURNAL OF APPLIED PHYSICS 109 (7) 07C712-(1)-07C712-(3) 2011/04
DOI：
10.1063/1.3554204
ISSN：
0021-8979
-
Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions
Peer-reviewed
T. Devolder, L. Bianchini, K. Miura, K. Ito, Joo-Von Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, H. Ohno
APPLIED PHYSICS LETTERS 98 (16) 162502-(1)-162502-(3) 2011/04
DOI：
10.1063/1.3576937
ISSN：
0003-6951
-
Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures
Peer-reviewed
K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, H. Ohno
JOURNAL OF APPLIED PHYSICS 109 (7) 07C711-(1)-07C711-(3) 2011/04
DOI：
10.1063/1.3554092
ISSN：
0021-8979
eISSN：
1089-7550
-
Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire
Peer-reviewed
T. Suzuki, S. Fukami, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, H. Ohno
APPLIED PHYSICS LETTERS 98 (14) 142505-(1)-142505-(3) 2011/04
DOI：
10.1063/1.3579155
ISSN：
0003-6951
-
Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers
Peer-reviewed
Kotaro Mizunuma, Michihiko Yamanouchi, Shoji Ikeda, Hideo Sato, Hiroyuki Yamamoto, Hua-Dong Gan, Katsuya Miura, Jun Hayakawa, Fumihiro Matsukura, Hideo Ohno
APPLIED PHYSICS EXPRESS 4 (2) 023002-(1)-023002-(3) 2011/02
DOI：
10.1143/APEX.4.023002
ISSN：
1882-0778
-
Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire
Peer-reviewed
S. Fukami, T. Suzuki, Y. Nakatani, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, H. Ohno
APPLIED PHYSICS LETTERS 98 (8) 082504-(1)-082504-(3) 2011/02
DOI：
10.1063/1.3558917
ISSN：
0003-6951
-
Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy
Peer-reviewed
Michihiko Yamanouchi, Albrecht Jander, Pallavi Dhagat, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno
IEEE MAGNETICS LETTERS 2 3000304 2011
DOI：
10.1109/LMAG.2011.2159484
ISSN：
1949-307X
-
A 600MHz MTJ-Based Nonvolatile Latch Making Use of Incubation Time in MTJ Switching
Peer-reviewed
T. Endoh, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 4.3.1-4.3.2 2011
DOI：
10.1109/IEDM.2011.6131487
-
A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
Peer-reviewed
S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, H. Ohno
NATURE MATERIALS 9 (9) 721-724 2010/09
DOI：
10.1038/NMAT2804
ISSN：
1476-1122
-
Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures
Peer-reviewed
M. Endo, S. Kanai, S. Ikeda, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 96 (21) 212503 2010/05
DOI：
10.1063/1.3429592
ISSN：
0003-6951
-
Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
Peer-reviewed
H. D. Gan, S. Ikeda, W. Shiga, J. Hayakawa, K. Miura, H. Yamamoto, H. Hasegawa, F. Matsukura, T. Ohkubo, K. Hono, H. Ohno
APPLIED PHYSICS LETTERS 96 (19) 2010/05
DOI：
10.1063/1.3429594
ISSN：
0003-6951
eISSN：
1077-3118
-
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
Peer-reviewed
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
IEICE TRANSACTIONS ON ELECTRONICS E93C (5) 608-613 2010/05
DOI：
10.1587/transele.E93.C.608
ISSN：
0916-8524
eISSN：
1745-1353
-
Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor- Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array
Invited
Peer-reviewed
鈴木大輔, 夏井雅典, 池田正二, 長谷川晴弘, 三浦勝哉, 早川純, 遠藤哲郎, 大野英男, 羽生貴弘
電子情報通信学会集積回路研究会技報 1-5 2010/04/22
-
A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme
Peer-reviewed
Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi, Shoji Ikeda, Haruhiro Hasegawa, Hideyuki Matsuoka, Hideo Ohno
IEEE JOURNAL OF SOLID-STATE CIRCUITS 45 (4) 869-879 2010/04
DOI：
10.1109/JSSC.2010.2040120
ISSN：
0018-9200
-
A nondestructive analysis of the B diffusion in Ta-CoFeB-MgO-CoFeB-Ta magnetic tunnel junctions by hard x-ray photoemission
Peer-reviewed
Xeniya Kozina, Siham Ouardi, Benjamin Balke, Gregory Stryganyuk, Gerhard H. Fecher, Claudia Felser, Shoji Ikeda, Hideo Ohno, Eiji Ikenaga
APPLIED PHYSICS LETTERS 96 (7) 072105-1-072105-3 2010/02
DOI：
10.1063/1.3309702
ISSN：
0003-6951
-
Spin-transfer Switching in Magnetic Tunnel Junctions with Synthetic Ferri-magnetic Free Layer
Peer-reviewed
M. Nishimura, M. Oogane, H. Naganuma, N. Inami, S. Ikeda, H. Ohno, Y. Ando
INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009) 200 052018-1-052018-5 2010
DOI：
10.1088/1742-6596/200/5/052018
ISSN：
1742-6588
-
The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal-Oxide-Semiconductor Circuits
Peer-reviewed
Tetsuo Endoh, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Masashi Kamiyanagi, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 2010
DOI：
10.1143/JJAP.49.04DM06
ISSN：
0021-4922
-
Magnetic Tunnel Junction for Nonvolatile CMOS Logic
Peer-reviewed
Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu, Naoki Kasai, Shoji Ikeda
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST 2010
-
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
Peer-reviewed
K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 95 (23) 232516-1-232516-3 2009/12
DOI：
10.1063/1.3265740
ISSN：
0003-6951
-
Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier
Peer-reviewed
Ji-Ho Park, Shoji Ikeda, Hiroyuki Yamamoto, Huadong Gan, Kotaro Mizunuma, Katsuya Miura, Haruhiro Hasegawa, Jun Hayakawa, Kenchi Ito, Fumihiro Matsukura, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 45 (10) 3476-3479 2009/10
DOI：
10.1109/TMAG.2009.2023237
ISSN：
0018-9464
-
Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures
Peer-reviewed
S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, S. Ikeda, H. Ohno
JOURNAL OF APPLIED PHYSICS 106 (2) 023920-1-023920-6 2009/07
DOI：
10.1063/1.3182817
ISSN：
0021-8979
eISSN：
1089-7550
-
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
Invited
Peer-reviewed
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 1A 3 2009/06/24
-
Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
Invited
Peer-reviewed
Shoun Matsunaga, Kimiyuki Hiyama, Atsushi Matsumoto, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
APPLIED PHYSICS EXPRESS 2 (2) 0023004-(1)-023004-(3) 2009/02
DOI：
10.1143/APEX.2.023004
ISSN：
1882-0778
-
MTJ-Based Nonvolatile Logic-in-Memory Circuit, Future Prospects and Issues
Peer-reviewed
Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
DATE: 2009 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, VOLS 1-3 433-+ 2009
ISSN：
1530-1591
-
Fabrication of a Standby-Power-Free TMR-Based Nonvolatile Memory-in-Logic Circuit Chip with a Spin-Injection Write Scheme
Peer-reviewed
Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
International Conference on Solid State Devices and Materials C3 (6) 274-275 2008/09
-
Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions
Invited
Peer-reviewed
Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Haruhiro Hasegawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
APPLIED PHYSICS EXPRESS 1 (9) 091301-(1)-091301-(3) 2008/09
DOI：
10.1143/APEX.1.091301
ISSN：
1882-0778
-
Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions
Peer-reviewed
Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Haruhiro Hasegawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
APPLIED PHYSICS EXPRESS 1 (9) 091301 2008/09
DOI：
10.1143/APEX.1.091301
ISSN：
1882-0778
-
Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature
Peer-reviewed
S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 93 (8) 082508 2008/08
DOI：
10.1063/1.2976435
ISSN：
0003-6951
eISSN：
1077-3118
-
Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature
Invited
Peer-reviewed
S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 93 (8) 082508-(1)-082508-(3) 2008/08
DOI：
10.1063/1.2976435
ISSN：
0003-6951
eISSN：
1077-3118
-
Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB-based synthetic ferrimagnetic free layers
Invited
Peer-reviewed
Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Michihiko Yarnanouchi, Young Min Lee, Ryutaro Sasaki, Masahiko Ichimura, Kenchi Ito, Takayuki Kawahara, Riichiro Takemura, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 44 (7) 1962-1967 2008/07
DOI：
10.1109/TMAG.2008.924545
ISSN：
0018-9464
-
Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB-based synthetic ferrimagnetic free layers
Peer-reviewed
Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Michihiko Yarnanouchi, Young Min Lee, Ryutaro Sasaki, Masahiko Ichimura, Kenchi Ito, Takayuki Kawahara, Riichiro Takemura, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 44 (7) 1962-1967 2008/07
DOI：
10.1109/TMAG.2008.924545
ISSN：
0018-9464
-
TMR Design Methodology for SPin-Transfer Torque RAM (SPRAM) with Nonvolatile and SRAM Compatible Operations
Peer-reviewed
R. Takemura, T. Kawahara, J. Hayakawa, K. Miura, K. Ito, M. Yamanouchi, S. Ikeda, H. Takahashi, H. Matsuoka, H. Ohno
Joint Non-Volatile Semiconductor Memory Workshop 2008, and 2008 International Conference on Memory Technology and Design (NVSMW/ICMTD) 54-56 2008/05
DOI：
10.1109/NVSMW.2008.22
-
Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited)
Invited
Peer-reviewed
T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, J. A. Katine, M. J. Carey, P. Crozat, J. V. Kim, C. Chappert, H. Ohno
JOURNAL OF APPLIED PHYSICS 103 (7) 07A723 2008/04
DOI：
10.1063/1.2839341
ISSN：
0021-8979
-
Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: Stochastic versus deterministic aspects
Peer-reviewed
T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, P. Crozat, N. Zerounian, Joo-Von Kim, C. Chappert, H. Ohno
PHYSICAL REVIEW LETTERS 100 (5) 057206 2008/02
DOI：
10.1103/PhysRevLett.100.057206
ISSN：
0031-9007
eISSN：
1079-7114
-
2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
Peer-reviewed
Takayuki Kawahara, Riichiro Takemura, Katsuya Miura, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Yasushi Goto, Kenchi Ito, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno
IEEE JOURNAL OF SOLID-STATE CIRCUITS 43 (1) 109-120 2008/01
DOI：
10.1109/JSSC.2007.909751
ISSN：
0018-9200
-
A Novel SPRAM (SPin-transfer torque RAM)-based Reconfigurable Logic Block for 3D-Stacked reconfigurable Spin Processor
Invited
Peer-reviewed
M. Sekikawa, K. Kiyoyama, H. Hasegawa, K. Miura, T. Fukushima, S. Ikeda, T. Tanaka, H. Ohno, M. Koyanagi
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST 935-+ 2008
DOI：
10.1109/IEDM.2008.4796645
-
Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier
Peer-reviewed
Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 90 (21) 212507(1)-212507(3) 2007/05
DOI：
10.1063/1.2742576
ISSN：
0003-6951
eISSN：
1077-3118
-
Magnetic tunnel junctions for spintronic memories and beyond
Invited
Peer-reviewed
Shoji Ikeda, Jun Hayakawa, Young Min Lee, Futnihifo Matsukura, Yuzo Ohno, Takahiro Hanyu, Hideo Ohno
IEEE TRANSACTIONS ON ELECTRON DEVICES 54 (5) 991-1002 2007/05
DOI：
10.1109/TED.2007.894617
ISSN：
0018-9383
eISSN：
1557-9646
-
Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions
Peer-reviewed
Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Hideo Ohno
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 310 (2) 1937-1939 2007/03
DOI：
10.1016/j.jmmm.2006.10.770
ISSN：
0304-8853
eISSN：
1873-4766
-
A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion
Peer-reviewed
K. Miura, I. Kawahara, R. Takemura, J. Hayakawa, S. Ikeda, R. Sasaki, H. Takahashi, H. Matsuoka, H. Ohno
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 234-+ 2007
DOI：
10.1109/VLSIT.2007.4339706
-
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions
Peer-reviewed
J. Hayakawaa, S. Ikeda, Y. M. Lee, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 89 (23) 232510-1-232510-3 2006/12
DOI：
10.1063/1.2402904
ISSN：
0003-6951
-
Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer
Peer-reviewed
Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 (37-41) L1057-L1060 2006/10
DOI：
10.1143/JJAP.45.L1057
ISSN：
0021-4922
-
Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer
Peer-reviewed
Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno
APPLIED PHYSICS LETTERS 89 (4) 042506-1-042506-3 2006/07
DOI：
10.1063/1.2234720
ISSN：
0003-6951
eISSN：
1077-3118
-
Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers
Peer-reviewed
S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, H. Ohno
JOURNAL OF APPLIED PHYSICS 99 (8) 08A907-1-08A907-3 2006/04
DOI：
10.1063/1.2176588
ISSN：
0021-8979
eISSN：
1089-7550
-
Fabrication and evaluation of magnetic tunnel junction with MgO tunneling barrier
Peer-reviewed
Takeshi Sakaguchi Hoon Choi, Ahn Sung-Jin, Takeaki Sugimura, Mungi Park, Milcihiko Oogane, Hyuckjae Oh, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Takafumi Fukushima, Terunobu Miyazaki, Hideo Ohno, Mitsumasa Koyanagi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 (4B) 3228-3232 2006/04
DOI：
10.1143/JJAP.45.3228
ISSN：
0021-4922
-
Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
Peer-reviewed
Takeshi Sakaguchi, Hoon Choi, Takeaki Sugimura, Mikihiko Oogane, Hyuckjae Oh, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Takafumi Fukushima, Terunobu Miyazaki, Hideo Ohno, Mitsumasa Koyanagi
International Conference on Solid State Device and Materials (SSDM) 642-643 2005/09
-
Current-driven magnetization reversal in exchange-biased spin-valve nanopillars
Peer-reviewed
J Hayakawa, H Takahashi, K Ito, M Fujimori, S Heike, T Hashizume, M Ichimura, S Ikeda, H Ohno
JOURNAL OF APPLIED PHYSICS 97 (11) 114321-114323 2005/06
DOI：
10.1063/1.1927707
ISSN：
0021-8979
-
Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature
Peer-reviewed
J Hayakawa, S Ikeda, F Matsukura, H Takahashi, H Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (16-19) L587-L589 2005
DOI：
10.1143/JJAP.44.L587
ISSN：
0021-4922
-
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering
Peer-reviewed
S Ikeda, J Hayakawa, YM Lee, R Sasaki, T Meguro, F Matsukura, H Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (46-49) L1442-L1445 2005
DOI：
10.1143/JJAP.44.L1442
ISSN：
0021-4922
-
Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
Peer-reviewed
J Hayakawa, S Ikeda, YM Lee, R Sasaki, T Meguro, F Matsukura, H Takahashi, H Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (37-41) L1267-L1270 2005
DOI：
10.1143/JJAP.44.L1267
ISSN：
0021-4922
-
Effect of Ru underlayer on magnetic properties of high B-s-Fe70Co30 films
Peer-reviewed
Y Uehara, T Kubomiya, T Miyajima, S Ikeda, Y Miura
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43 (10) 7002-7005 2004/10
DOI：
10.1143/JJAP.43.7002
ISSN：
0021-4922
-
Writer Materials for High Performance Hard Disk Drives
Peer-reviewed
T. Kubomiya, M. Matsuoka, Y. Uehara, S. Ikeda, Y. Miura
Transactions of the Materials Research Society of Japan 29 1577-1580 2004
-
高性能ライトヘッド用高Bs軟磁性材料
Invited
Peer-reviewed
池田正二, 上原裕二, 三宅裕子, 金子大樹, 金井均, 田河育也
日本応用磁気学会誌 28 (9) 963-968 2004
-
Dependence of magnetic properties on sputtering pressure for Fe-Al-O alloy films made by carousel-type sputtering
Peer-reviewed
Y Uehara, S Ikeda
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 (7A) 4297-4301 2003/07
DOI：
10.1143/JJAP.42.4297
ISSN：
0021-4922
-
Flattop-type Writer using Soft Magnetic Films with High Resistivity
Peer-reviewed
Shoji Ikeda, Iukuya Tagawa, Yuji Uehara, Yoshinori Ohtsuka, Hiroshi Maeda, Takashi Sekikawa, Masahiro Kakehi, Minoru Hasegawa
Trans. Magn. Soc. Jpn. 3 (1) 22-25 2003
Publisher:
The Magnetics Society of Japan (MSJ)
DOI：
10.3379/tmjpn2001.3.22
ISSN：
1346-7948
-
スパッタFe70Co30 二元合金膜における軟磁気特性の膜厚依存性
Peer-reviewed
上原裕二, 池田正二, 久保宮敬幸
日本応用磁気学会誌 27 (9) 958-962 2003
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.27.958
ISSN：
0285-0192
-
Soft Magnetic Materials with Bs = 2.4 T for a High Performance Writer
Peer-reviewed
Shoji Ikeda, Ikuya Tagawa, Takayuki Kubomiya, Junichi Kane, Yuji Uehara, Takao Koshikawa
Trans. Magn. Soc. Jpn. 3 (1) 17-21 2003
Publisher:
The Magnetics Society of Japan (MSJ)
DOI：
10.3379/tmjpn2001.3.17
ISSN：
1346-7948
-
Write heads with pole tip consisting of high-Bs FeCoAlO films
Peer-reviewed
S Ikeda, Tagawa, I, Y Uehara, T Kubomiya, J Kane, M Kakehi, A Chikazawa
IEEE TRANSACTIONS ON MAGNETICS 38 (5) 2219-2221 2002/09
DOI：
10.1109/TMAG.2002.802664
ISSN：
0018-9464
-
Electric resistivity and magnetoanisotropy in Fe/Si evaporated multilayers
Peer-reviewed
A Yamada, W Takakura, S Ikeda, Y Ueda
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 189 (3) 753-757 2002/02
DOI：
10.1002/1521-396X(200202)189:3<753::AID-PSSA753>3.0.CO;2-7
ISSN：
0031-8965
-
高Bs-FeAlO軟磁性膜の磁気異方性
Peer-reviewed
池田正二, 久保宮敬幸, 松岡正昭, 田河育也, 上原裕二, 兼 淳一, 近沢哲史
日本応用磁気学会誌 26 (6) 835-838 2002
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.26.835
ISSN：
0285-0192
-
High-performance write head design and materials
Tagawa, I, S Ikeda, Y Uehara
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL 37 (2) 164-173 2001
ISSN：
0016-2523
-
高Bs Fe-N-Al-O膜の軟磁気特性に及ぼす窒素添加の影響
Peer-reviewed
池田正二, 田河育也, 上原裕二
日本応用磁気学会誌 25 (4) 911-914 2001
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.25.911
ISSN：
0285-0192
-
高性能ライトヘッドの設計と材料
Invited
田河育也, 池田正二, 上原裕二
IDEMA Japan News 49 9-13 2001
-
Soft magnetic properties and microstructure of high moment Fe-N-Al-O films for recording heads
Peer-reviewed
S Ikeda, Y Uehara, Tagawa, I, N Takeguchi, M Kakehi
IEEE TRANSACTIONS ON MAGNETICS 36 (5) 3470-3472 2000/09
DOI：
10.1109/20.908863
ISSN：
0018-9464
-
高BsスパッタFe-N-Al-O膜の軟磁気特性
Peer-reviewed
池田正二, 竹口直樹, 筧 正弘, 田河育也, 上原裕二
日本応用磁気学会誌 24 (4) 679-682 2000
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.24.679
ISSN：
0285-0192
-
Electrical Resistance in Fe/Al2O3 Multilayered Films Prepared by an Electron Beam Evaporation Method (Electrical Resistance in Fe/Al2O3 Oblique Deposition Multilayers)
Peer-reviewed
W. Takakura, S. Ikeda, Y. Ueda
Mater. Trans. JIM 24 878-881 2000
-
Electric resistance of Fe/Al2O3 multilayered films prepared by an electron beam evaporation method
Peer-reviewed
Yuji Ueda, Wataru Takakura, Shoji Ikeda
Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals 64 (10) 878-881 2000
Publisher:
Japan Inst of Metals
DOI：
10.2320/jinstmet1952.64.10_878
ISSN：
0021-4876
-
3.Soft Magnetic Properties and Microstructure of High Moment Fe-N-Al-O Films for Recording Heads
S. Ikeda, I. Tagawa, N. Takeguchi, M. Kakehi, Y. Uehara
電子情報通信学会技術研究報告 MR2000-17 (277) 1-3 2000
Publisher:
The Institute of Electronics, Information and Communication Engineers
ISSN：
0913-5685
-
Magnetoresistance and compositional modulation near the layer boundary of Co Cu multilayers produced by pulse electrodeposition
Peer-reviewed
Y Ueda, N Kikuchi, S Ikeda, T Houga
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 198-99 740-742 1999/06
DOI：
10.1016/S0304-8853(98)01024-5
ISSN：
0304-8853
-
Magnetic Properties and GMR Effect in Nonequilibrium Co-Cu Alloys Produced by Mechanical Alloying
Peer-reviewed
S. Ikeda, W. Takakura, S. Chikazawa, Y. Ueda
J. Magn. Soc. Jpn. 23 (1) 138-140 1999
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.23.138
ISSN：
0285-0192
-
MA Cox Cu100-x 合金の磁気抵抗磁性の温度依存性
Peer-reviewed
池田正二, 近沢 進, 高倉 亘, 宝賀 剛, 上田勇治
日本応用磁気学会誌 23 (4) 1133-1136 1999
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.23.1133
ISSN：
0285-0192
-
薄膜・微粒子の構造と磁気抵抗，磁性及び超伝導
上田勇治, 松田瑞史, 近澤 進, 酒井 彰, 池田正二
室蘭工業大学紀要 48 21-31 1998
Publisher:
ISSN：
1344-2708
-
Magnetoresistance in Co-Ag multilayers and granular films produced by electrodeposition method
Peer-reviewed
H Zaman, S Ikeda, Y Ueda
IEEE TRANSACTIONS ON MAGNETICS 33 (5) 3517-3519 1997/09
DOI：
10.1109/20.619483
ISSN：
0018-9464
-
Giant magnetoimpedance effect in nanocrystalline Fe74SixB22-xCu1Nb3 ribbons
Peer-reviewed
Y Ueda, S Ikeda, W Takakura
JOURNAL OF APPLIED PHYSICS 81 (8) 5787-5789 1997/04
DOI：
10.1063/1.364668
ISSN：
0021-8979
-
Magnetoresistance in (CoxFe1-x)(20)Cu-80 granular alloys produced by mechanical alloying
Peer-reviewed
S Ikeda, T Houga, W Takakura, Y Ueda
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 217 376-380 1996/10
DOI：
10.1016/S0921-5093(96)10331-2
ISSN：
0921-5093
-
Magnetoresistance and magnetism in Fe-Cu alloys produced by electrodeposition and mechanical alloying methods
Peer-reviewed
Y Ueda, S Ikeda, Y Mori, H Zaman
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 217 371-375 1996/10
DOI：
10.1016/S0921-5093(96)10332-4
ISSN：
0921-5093
-
Magnetism and magnetoresistive properties in FexCu100-x alloys produced by mechanical alloying
Peer-reviewed
Y Ueda, S Ikeda, S Moriwaki, M Matsuda
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 35 (8B) L1059-L1061 1996/08
DOI：
10.1143/jjap.35.L1059
ISSN：
0021-4922
-
Magnetotransport and magnetic properties of mechanically alloyed CoxCu100-x
Peer-reviewed
Y Ueda, S Ikeda, S Chikazawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 35 (6A) 3414-3418 1996/06
DOI：
10.1143/JJAP.35.3414
ISSN：
0021-4922
-
Magnetic properties and magnetoresistance of Fe/Cr multilayer films prepared by vapor deposition and electrodeposition
Peer-reviewed
Y Ueda, S Ikeda, S Hama, A Yamada
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 156 (1-3) 353-354 1996/04
DOI：
10.1016/0304-8853(95)00895-0
ISSN：
0304-8853
-
メカニカルアロイング法によって作製したFe-Cu合金の磁性と磁気抵抗効果
Peer-reviewed
池田正二, 森脇 憲, 上田勇治
日本応用磁気学会誌 20 (2) 385-388 1996
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.20.385
ISSN：
0285-0192
-
メカニカルアロイング法によって作製したCoxCu100-x 合金の構造と磁気抵抗
Peer-reviewed
上田勇治, 池田正二, 近沢 進
日本応用磁気学会誌 20 (2) 381-384 1996
Publisher:
The Magnetics Society of Japan
DOI：
10.3379/jmsjmag.20.381
ISSN：
0285-0192
-
Structure and temperature dependence of magnetic properties in the nanocrystalline Fe74SixB22-xCu1Nb3 alloys
Peer-reviewed
S Ikeda, M Nagai, Y Ueda
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34 (11) 6046-6052 1995/11
DOI：
10.1143/JJAP.34.6046
ISSN：
0021-4922
-
MAGNETORESISTANCE IN CO-CU ALLOYS PREPARED BY THE MECHANICAL ALLOYING
Peer-reviewed
Y UEDA, S IKEDA
MATERIALS TRANSACTIONS JIM 36 (2) 384-388 1995/02
DOI：
10.2320/matertrans1989.36.384
ISSN：
0916-1821
-
メカニカルアロイング法によるCo20Cu80合金の熱処理と磁気抵抗
Peer-reviewed
上田勇治, 池田正二
日本応用磁気学会誌 19 257-260 1995
DOI：
10.3379/jmsjmag.19.257
-
PRECIPITATION OF ALPHA-FE AND STRUCTURE OF AMORPHOUS FE74CU1NB3SIXB22-X ALLOYS BY ANNEALING
Peer-reviewed
Y UEDA, S IKEDA, K MINAMI
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 181 992-996 1994/05
DOI：
10.1016/0921-5093(94)90786-2
ISSN：
0921-5093
eISSN：
1873-4936
-
Permeability and α-Fe Phase Precipitated in Fe-Si-B-Cu-Nb Amorphous Alloys
Y. Ueda, S. Ikeda, T. Sakaguchi
IEEE Translation Journal on Magnetics in Japan 9 (6) 39-46 1994
DOI：
10.1109/TJMJ.1994.4565955
ISSN：
0882-4959
-
Fe-Si-B-Cu-Nb非晶質合金中に析出したα-Feと透磁率
Peer-reviewed
上田勇治, 池田正二, 坂口 威
日本応用磁気学会誌 18 463-468 1994
DOI：
10.3379/jmsjmag.18.463
