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Takeshi Ohshima

Section

Graduate School of Engineering

Job title

Specially Appointed Professor(Research)

Degree

Ph. D (University of Tsukuba)

researchmap

https://researchmap.jp/read0112223

J-GLOBAL ID

200901034698587199

Research History 9

2024/04 - Present

National Institutes for Quantum Science and Technology　Quantum Materials and Applications Research Center (QUARC), Takasaki Institute for Advanced Quantum Science　Director / Project Leader
2023/06 - Present

Tohoku University　Department of Materials Science　Specially Appointed Professor
2018/08 - Present

The University of Tsukuba　Faculty of Pure and Applied Sciences　Guest Professor
2022/04 - 2024/03

National Institutes for Quantum Science and Technology　Quantum Materials and Applications Research Center (QUARC), Takasaki Advanced Radiation Research Institute, Quantum Beam Science Research Directorate　Director / Project Leader
2020/04 - 2022/03

National Institutes for Quantum Science and Technology　Department of Advanced Functional Materials Research, Takasaki Advanced Radiation Research Institute, Quantum Beam Science Research Directorate　Director / Project Leader
2016/04 - 2020/03

National Institutes for Quantum and Radiological Science and Technology　Quantum Beam Science Research Directorate　Leader
2014/04 - 2017/03

Gunma University　Organization for Promotion of Research and University-Industry Collaboration　Guest Professor
2008/04 - 2017/03

Gunma National College of Technology, Japan　Part-time lecturer
2005/06 - 2016/03

Japan Atomic Energy Agency　Quantum Beam Science Research Center　Group Leader

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Education 2

University of Tsukuba

- 1994
University of Tsukuba

- 1989

Professional Memberships 3

量子生命科学会
応用物理学会
日本物理学会

Research Interests 7

Quantum sensing
Defect Engineering
放射線照射効果
素子作製技術
耐環境性電子材料
Radiation Effects
Semiconductors

Research Areas 2

Energy / Quantum beam science / Radiation Effects on Semiconductors
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Awards 7

Poster Award

2014/04　Japan Society of Applied Physics　Room-temperature diamond spin quibits by co-implantation of molecular nitrogen and carbon ions
Best Poster Award

2010/06　35th IEEE Photovoltaic Specialists Conference　Change in the Electrical Performance of InGaas Quantum Dot Solar Cells due to Irradiation
35th IEEE PVSC poster award, 35th IEEE Photovoltaic Specialists Conference (PVSC)

2010
34th IEEE PVSC poster award: the 34th IEEE Photovoltaic Specialists Conference (PVSC)

2009
第12回放射線プロセスシンポジウム奨励賞

2007
"2003 IEEE Nuclear and Space Radiation Effects Conference, Outstanding Radiation Effects Data Workshop Presentation" by the Institute of Electrical and Electronics Engineers, Inc. (IEEE), Nuclear and Plasma Sciences Society

2004
"3rd WCPEC poster award" by the program committee of 3rd WCPEC: the 3rd World Conference on Photovoltaic Energy Conversion),

2003

Show all ︎Show 5

Papers 606

Photoionization Current Spectroscopy of Individual Silicon Vacancies in Silicon Carbide

Kazuki Okajima, Tetsuri Nishikawa, Hiroshi Abe, Koichi Murata, Takeshi Ohshima, Hidekazu Tsuchida, Naoya Morioka, Norikazu Mizuochi

Nano Letters　2026/04/18
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.nanolett.5c05964 　

ISSN： 1530-6984

eISSN： 1530-6992
Photoelectrical detection and characterization of divacancy and PL5–PL7 spins in silicon carbide

Naoya Morioka, Tetsuri Nishikawa, Hiroshi Abe, Takeshi Ohshima, Norikazu Mizuochi

Physical Review B　113　(10)　2026/03/16
Publisher: American Physical Society (APS)
DOI： 10.1103/mdy9-x7lk 　

ISSN： 2469-9950

eISSN： 2469-9969
Defect-Activated and Surface-Modified Hexagonal Boron Nitride Nanoparticles toward Intracellular Quantum Sensing. International-journal

Suzune Shimomura, Yurina Nakane, Hiroshi Abe, Yusuke Miyake, Takeshi Ohshima, Yumi Yoshida, Kohji Maeda, Takuma Sugi, Shingo Sotoma

Nano letters　2026/03/12

DOI： 10.1021/acs.nanolett.5c05398 　

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van der Waals materials hosting spin defects have emerged as a new platform for solid-state quantum sensing. We report hexagonal boron nitride (hBN) nanoparticles containing negatively charged boron vacancy (VB-) centers that function as nanoscale quantum sensors. High-energy electron irradiation efficiently generated VB- centers, enabling clear optically detected magnetic resonance (ODMR) detection from nanoparticle ensembles. To improve dispersion and suppress nonspecific protein adsorption, we developed a two-step surface modification process using silica encapsulation followed by hyperbranched polyglycerol (HPG) grafting. The HPG coating enhanced colloidal stability and reduced nonspecific protein adsorption. ODMR thermometry revealed temperature-dependent frequency shifts with a thermal coefficient of approximately - 300 kHz/°C. Finally, we demonstrated proof-of-concept detection of ODMR signal in HeLa cells after uptake of the nanoparticles. These results establish VB--containing hBN nanoparticles as promising nanoscale quantum sensors for future intracellular applications.
The future of quantum technology as seen from the EU, USA and Japan: Experts’ vision over the next two decades

Dana Anderson, Philippe Chomaz, Shigeki Takeuchi, Yasuhiko Arakawa, Yoshinobu Baba, Oliver Benson, Kathy-Anne Brickman Soderberg, Eleni Diamanti, David Elkouss, Keisuke Fujii, Akira Furusawa, Elie Gouzien, Hidetoshi Katori, Shiro Kawabata, Taku Kawahara, Hideo Kosaka, Marina Marinkovic, Yoko Miyamoto, N. Mizuochi, Mio Murao, Kae Nemoto, Kenji Ohmori, Takeshi Ohshima, Eugene Polzik, Marina Radulaski, Nicolas Sangouard, Yoshiro Takahashi, Utako Tanaka, Seigo Tarucha, Paolo Villoresi, Nan Yu, Julian Zivy

Journal of Physics B: Atomic, Molecular and Optical Physics　2025/12/02
Publisher: IOP Publishing
DOI： 10.1088/1361-6455/ae271a 　

ISSN： 0953-4075

eISSN： 1361-6455

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Abstract The development of quantum technology is facing substantial scientific and technological challenges. More importantly, there are as-yet-unknown aspects and applications of quantum technology to be uncovered. There is thus global acknowledgement by stakeholder communities and governments alike that the ongoing advancement of quantum science and technology ought to be an international pursuit in which the strain between competition and cooperation is balanced through collaboration. It is in this spirit of “coopetition” that this article seeks to give a cross-sectional view of the state of Quantum 2.0 technology in the USA, Europe and Japan, by providing the predictions of a large number of experts concerning progress in quantum technology over the next two decades.&#xD;
Investigating size and surface modification to optimise the delivery of nanodiamonds to brain glial cells

Manami Takahashi, Ayaka Takada, Chihiro Suzuki, Kiichi Kaminaga, Masaki Yoshioka, Mariko Handa, Jeff Kershaw, Hiroshi Abe, Takeshi Ohshima, Ryuji Igarashi, Hiroyuki Takuwa

Discover Nano　20　(1)　2025/08/20
Publisher: Springer Science and Business Media LLC
DOI： 10.1186/s11671-025-04335-2 　

eISSN： 2731-9229

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Abstract Nanodiamonds (NDs) with nitrogen-vacancy (NV) defects have garnered attention as promising nano-quantum sensors due to their high photostability, low biotoxicity, and ability to measure intracellular parameters such as temperature, magnetic fields, and electric fields. While NDs have been extensively studied in in vitro systems, their application in vivo remains underdeveloped. Efficient delivery of NDs to specific cells within biological tissues remains a critical challenge for advancing their applications in the life sciences. In this study, we investigated the intracellular uptake of NDs by glial cells (microglia and astrocytes) in the brain. Twelve types of NDs, differing in size (50 nm, 150 nm, 250 nm, and 350 nm) and surface modification (COOH, HPG and HPG-COOH), were locally injected into the brain parenchyma of mice. The intracellular uptake of NDs was assessed using immunostaining and confocal microscopy. Microglia preferentially internalized HPG-modified NDs. HPG-modified NDs also exhibited high diffusivity, facilitating interactions with surrounding microglia and enhancing uptake efficiency. In contrast, COOH-modified NDs were more efficiently internalized by astrocytes than HPG-modified NDs. This suggests that COOH-modified NDs tend to remain at the local injection site, where inflammation induced by tissue damage may have enhanced the phagocytic activity of astrocytes. These findings demonstrate that the uptake characteristics of NDs differ by cell type. HPG-modified NDs, are optimal for microglia, while COOH-modified NDs, are more suitable for astrocytes. It is anticipated that the results of this study will act as an important guide for the use of NDs as nano-quantum sensors in living brain tissues.
Creation of Single Tin-Vacancy Color Centers in Small Nanodiamonds

Hideaki Takashima, Konosuke Shimazaki, Hiroshi Abe, Takeshi Ohshima, Shigeki Takeuchi

ACS Photonics　12　(9)　4950-4955　2025/08/13
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acsphotonics.5c00627 　

ISSN： 2330-4022

eISSN： 2330-4022
Hybrid nanosensors of carbon quantum dots and fluorescent nanodiamonds: Ratiometric thermometry and multicolor sensing

Kota Shiraya, Yurina Nakane, Hiroshi Abe, Takeshi Ohshima, Takuma Sugi, Yumi Yoshida, Kohji Maeda, Shingo Sotoma

Carbon　242　120457-120457　2025/07
Publisher: Elsevier BV
DOI： 10.1016/j.carbon.2025.120457 　

ISSN： 0008-6223
A near-quantum-limited diamond maser amplifier operating at millikelvin temperatures

Yuimaru Kubo, Morihiro Ohta, Ching-Ping Lee, Vincent Sietses, Ivan Kostylev, Jason Ball, Petr Moroshkin, Tatsuki Hamamoto, Yutaka Kobayashi, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Hiroki Takahashi

2025/06/20

DOI： 10.21203/rs.3.rs-6766240/v1 　
Formation of Cl–C Chemical Bonds by High-Energy Heavy Ion Irradiation of KCl/Graphene Heterostructures

Shiro Entani, Mitsunori Honda, Masaki Mizuguchi, Hideo Watanabe, Takeshi Ohshima, Makoto Kohda

ACS Omega　10　(21)　21537-21542　2025/05/18
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acsomega.5c00580 　

ISSN： 2470-1343

eISSN： 2470-1343
Performance evaluation of a diamond quantum magnetometer for biomagnetic sensing: A phantom study

Naota Sekiguchi, Yuta Kainuma, Motofumi Fushimi, Chikara Shinei, Masashi Miyakawa, Takashi Taniguchi, Tokuyuki Teraji, Hiroshi Abe, Shinobu Onoda, Takeshi Ohshima, Mutsuko Hatano, Masaki Sekino, Takayuki Iwasaki

Applied Physics Letters　126　(19)　2025/05/12
Publisher: AIP Publishing
DOI： 10.1063/5.0254828 　

ISSN： 0003-6951

eISSN： 1077-3118

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We employ a dry-type phantom to evaluate the performance of a diamond quantum magnetometer with a high sensitivity of about 6 pT/Hz from the viewpoint of practical measurement in biomagnetic sensing. The dry phantom is supposed to represent an equivalent current dipole (ECD) generated by brain activity, emulating an encephalomagnetic field. The spatial resolution of the magnetometer is evaluated to be sufficiently higher than the length of the variation in the encephalomagnetic field distribution. The minimum detectable ECD moment is evaluated to be 0.2 nA m by averaging about 8000 measurements for a standoff distance of 2.4 mm from the ECD. We also discuss the feasibility of detecting an ECD in the measurement of an encephalomagnetic field in humans. We conclude that it is feasible to detect an encephalomagnetic field from a shallow cortex area such as the primary somatosensory cortex.
Radiation tolerance analysis of space solar cells under increased irradiance conditions

Yoshiyuki Murakami, Teppei Okumura, Tetsuya Nakamura, Daisuke Sato, Shinichiro Sato, Shota Yamasaki, Naotsugu Nagasawa, Takeshi Ohshima, Taishi Sumita

Japanese Journal of Applied Physics　64　(5)　05SP31-05SP31　2025/05/01
Publisher: IOP Publishing
DOI： 10.35848/1347-4065/add539 　

ISSN： 0021-4922

eISSN： 1347-4065

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Abstract In this study, we obtained the electrical performance of concentrator photovoltaics (CPV) using InGaP/GaAs/Ge triple-junction solar cells before and after high-energy particle irradiation to examine the effects of solar concentration on radiation tolerance. The conversion efficiency before radiation exposure increased in proportion to the received solar irradiance mainly because of the solar concentration effect of the open-circuit voltage (V _oc). Additionally, our experimental results revealed that the solar concentration effect of V _oc was enhanced after radiation exposure, which mitigated V _oc degradation. To investigate the solar concentration effect on V _oc in detail, the recombination current dependencies of the external luminescence efficiency ( ) of InGaP and GaAs single-junction (1J) cells were measured before and after radiation exposure. It was found that the of InGaP 1J cells after radiation exposure increased with increasing recombination current, which is considered to suppress the degradation of the V _oc of the CPV. These findings demonstrate the significant advantages of CPV for space applications.
Coherent photoelectrical readout of single spins in silicon carbide at room temperature

Tetsuri Nishikawa, Naoya Morioka, Hiroshi Abe, Koichi Murata, Kazuki Okajima, Takeshi Ohshima, Hidekazu Tsuchida, Norikazu Mizuochi

Nature Communications　2025/04/15

DOI： 10.1038/s41467-025-58629-1 　
Homogeneous spin-dephasing time of NV− centre in millimetre-scale 12C-enriched high-pressure high-temperature diamond crystals

Chikara Shinei, Yuta Masuyama, Hiroshi Abe, Masashi Miyakawa, Takashi Taniguchi, Takeshi Ohshima, Tokuyuki Teraji

Communications Materials　6　(1)　2025/04/08
Publisher: Springer Science and Business Media LLC
DOI： 10.1038/s43246-025-00782-7 　

eISSN： 2662-4443
Evaluation of single silicon vacancy centers in nanodiamonds created by ion implantation at cryogenic temperatures

Konosuke Shimazaki, Kazuki Suzuki, Kengo Sakamoto, Yudai Okashiro, Hiroshi Abe, Takeshi Ohshima, Hideaki Takashima, Shigeki Takeuchi

New Journal of Physics　26　(9)　093034-093034　2024/09/01
Publisher: IOP Publishing
DOI： 10.1088/1367-2630/ad7282 　

eISSN： 1367-2630

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Abstract Silicon vacancy (SiV) centers in diamonds have attracted much attention because of their stability and narrow emission linewidth, and are promising for applications in quantum information technology. SiV-center-encapsulated nanodiamonds have also attracted much attention because of their potential to be coupled to various photonic devices. One efficient way to fabricate nanodiamonds that contain SiV centers is Si ion implantation into nanodiamonds. However, the evaluation of a single SiV center in a nanodiamond produced by this method at low temperatures has not been performed. In this study, we report on the optical properties of a single SiV center in a nanodiamond produced by ion implantation at cryogenic temperatures. The emission spectrum from a single SiV center ( ) was observed with four distinct fine splittings of the zero-phonon line (ZPL) at 4 K. At an excitation power of 50 W, the full width at half maximum of the ZPL reached the spectrometer resolution limit (0.09 nm). The temperature dependence of the emission peak is consistent with that of the emission coming from an SiV center under high strain. The results obtained in this work suggest that nanodiamonds containing single SiV centers formed using this method will be an important building block for the realization of quantum information applications.
Diamond energy-dispersive dosimeter for measuring linear energy deposition distributions in clinical carbon beam therapy

Takumi Matsumoto, Katsumi Aoki, Hideyuki Takei, Takahiro Makino, Shunsuke Yonai, Christina Weiss, Erich Griesmayer, Takeshi Ohshima, Makoto Sakai, Akihiko Matsumura, Wataru Kada

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　554　2024/09

DOI： 10.1016/j.nimb.2024.165430 　

ISSN： 0168-583X
Columnar excitation fluorescence microscope for accurate evaluation of quantum properties of color centers in bulk materials

Yuta Masuyama, Chikara Shinei, Shuya Ishii, Hiroshi Abe, Takashi Taniguchi, Tokuyuki Teraji, Takeshi Ohshima

Scientific Reports　14　(1)　2024/08/05
Publisher: Springer Science and Business Media LLC
DOI： 10.1038/s41598-024-68610-5 　

eISSN： 2045-2322
Compact and Stable Diamond Quantum Sensors for Wide Applications

Yuta Kainuma, Yuji Hatano, Takayuki Shibata, Naota Sekiguchi, Akimichi Nakazono, Hiromitsu Kato, Shinobu Onoda, Takeshi Ohshima, Mutsuko Hatano, Takayuki Iwasaki

Advanced Quantum Technologies　2024/06/19
Publisher: Wiley
DOI： 10.1002/qute.202300456 　

ISSN： 2511-9044

eISSN： 2511-9044

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Abstract This study proposes compact, highly sensitive, and stable diamond quantum sensors for a wide range of applications, including biomedical and energy electronics. For enhanced sensitivity and alignment precision within the objective field, a high‐quality, (111)‐oriented ¹²C‐enriched chemical vapor deposition (CVD) diamond, featuring a nitrogen‐vacancy (NV) axis in the (111) direction, is employed as the sensor. To increase the fluorescence collection efficiency, the laser beam is irradiated from the side surface of the CVD diamond, and fluorescence is detected using a compound parabolic concentrator (CPC) lens. The floor noise level of the magnetic field signal is 44 pT/Hz^0.5. An Allan deviation of 1.2 pT over 1000 s of averaging demonstrates stability. This is attributable to the integration of a balancing circuit to cancel out laser noise, alongside mechanisms to compensate for temperature fluctuations and a copper housing to shield against electromagnetic field noise.
Diamond quantum magnetometer with dc sensitivity of sub-10 pT <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Hz</mml:mi><mml:msup><mml:mspace width="0.2em"/><mml:mrow><mml:mo>−</mml:mo><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>2</mml:mn></mml:mrow></mml:msup></mml:math> toward measurement of biomagnetic field

N. Sekiguchi, M. Fushimi, A. Yoshimura, C. Shinei, M. Miyakawa, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Ohshima, M. Hatano, M. Sekino, T. Iwasaki

Physical Review Applied　21　(6)　2024/06/05
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevapplied.21.064010 　

eISSN： 2331-7019
Detection characteristics for neutrons in an InGaP solar cell under high-temperature conditions

Yasuki Okuno, Mitsuru Imaizumi, Takahiro Makino, Takeshi Ohshima, Yuki Jimba, Tamotsu Okamoto, Tomohiro Kobayashi

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms　551　165339-165339　2024/06
Publisher: Elsevier BV
DOI： 10.1016/j.nimb.2024.165339 　

ISSN： 0168-583X
All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide

C. T.-K. Lew, V. K. Sewani, N. Iwamoto, T. Ohshima, J. C. McCallum, B. C. Johnson

Physical Review Letters　132　(14)　2024/04/04
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevlett.132.146902 　

ISSN： 0031-9007

eISSN： 1079-7114
Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing

E. M. Pavelescu, D. Ticoş, O. Ligor, C. Romaniţan, A. Matei, F. Comănescu, V. Ţucureanu, S. I. Spânulescu, C. Ticoş, T. Ohshima, T. Nakamura, M. Imaizumi, R. S. Goldman, A. Wakahara, K. Yamane

Optical Materials　149　2024/03

DOI： 10.1016/j.optmat.2024.115075 　

ISSN： 0925-3467
All-optical determination of one or two emitters using polarization-enhanced photon correlations of nitrogen-vacancy centers in diamond

Davin Yue Ming Peng, Josef G. Worboys, Qiang Sun, Shuo Li, Marco Capelli, Shinobu Onoda, Takeshi Ohshima, Philipp Reineck, Brant C. Gibson, Andrew D. Greentree

Physical Review A　2024/02/29

DOI： 10.1103/PhysRevA.109.023723 　
A wide dynamic range diamond quantum sensor as an electric vehicle battery monitor

Yuji Hatano, Junya Tanigawa, Akimichi Nakazono, Takeharu Sekiguchi, Shinobu Onoda, Takeshi Ohshima, Takayuki Iwasaki, Mutsuko Hatano

Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences　2024/01/22

DOI： 10.1098/rsta.2022.0312 　
Intravital microscopic thermometry of rat mammary epithelium by fluorescent nanodiamond

Takahiro Hamoya, Kiichi Kaminaga, Ryuji Igarashi, Yukiko Nishimura, Hiromi Yanagihara, Takamitsu Morioka, Chihiro Suzuki, Hiroshi Abe, Takeshi Ohshima, Tatsuhiko Imaoka

Nanoscale Horizons　2024
Publisher: Royal Society of Chemistry (RSC)
DOI： 10.1039/d4nh00237g 　

ISSN： 2055-6756

eISSN： 2055-6764

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This study reports an application of microscopic thermometry in a living rat using quantum sensing based on the fluorescent nanodiamond (FND) nitrogen-vacancy center, demonstrating the relevance of the technique in biomedical research using a mammal.
Ultralong-Term High-Density Data Storage with Atomic Defects in SiC

M. Hollenbach, C. Kasper, D. Erb, L. Bischoff, G. Hlawacek, H. Kraus, W. Kada, T. Ohshima, M. Helm, S. Facsko, V. Dyakonov, G. V. Astakhov

Advanced Functional Materials　2024

DOI： 10.1002/adfm.202313413 　

ISSN： 1616-301X

eISSN： 1616-3028
Change in charge state of NV center caused by monovacancy formation

Chikara Shinei, Hiroshi Abe, Takeshi Ohshima, Tokuyuki Teraji

Diamond and Related Materials　140　110523-110523　2023/12
Publisher: Elsevier BV
DOI： 10.1016/j.diamond.2023.110523 　

ISSN： 0925-9635
Highly Sensitive Temperature Sensing Using the Silicon Vacancy in Silicon Carbide by Simultaneously Resonated Optically Detected Magnetic Resonance

Yuichi Yamazaki, Yuta Masuyama, Kazutoshi Kojima, Takeshi Ohshima

Physical Review Applied　2023/09/05

DOI： 10.1103/PhysRevApplied.20.L031001 　
Development of a SiC semiconductor-based dosimeter for evaluating clinical dose distribution in carbon ion cancer therapy fields

Takumi Matsumoto, Kohei Yamaguchi, Rio Yanagisawa, Kei Kubodera, Yudai Arai, Takahiro Makino, Takeshi Ohshima, Makoto Sakai, Akihiko Matsumura, Wataru Kada

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms　542　151-157　2023/09
Publisher: Elsevier BV
DOI： 10.1016/j.nimb.2023.06.013 　

ISSN： 0168-583X
Measurement of radiation-induced current through a SiC Schottky barrier diode in a clinical carbon beam cancer therapy field

Kei Kubodera, Takumi Matsumoto, Kohei Yamaguchi, Ryo Yokota, Yudai Arai, Takahiro Makino, Takeshi Ohshima, Makoto Sakai, Akihiko Matsumura, Wataru Kada

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms　540　80-84　2023/07
Publisher: Elsevier BV
DOI： 10.1016/j.nimb.2023.04.009 　

ISSN： 0168-583X
Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide Peer-reviewed

C. T.-K. Lew, V. K. Sewani, N. Iwamoto, T. Ohshima, J. C. McCallum, B. C. Johnson

Applied Physics Letters　2023/06/05

DOI： 10.1063/5.0154382 　
Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

Shu Motoki, Shin-ichiro Sato, Seiichi Saiki, Yuta Masuyama, Yuichi Yamazaki, Takeshi Ohshima, Koichi Murata, Hidekazu Tsuchida, Yasuto Hijikata

Journal of Applied Physics　133　(15)　2023/04/21

DOI： 10.1063/5.0139801 　

ISSN： 1089-7550 0021-8979
Highly Dispersed 3C Silicon Carbide Nanoparticles with a Polydopamine/Polyglycerol Shell for Versatile Functionalization

Shingo Sotoma, Hiroshi Abe, Yohei Miyanoiri, Takeshi Ohshima, Yoshie Harada

ACS Applied Materials & Interfaces　2023/04/18
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acsami.3c00194 　

ISSN： 1944-8244

eISSN： 1944-8252
Spin-Dependent Dynamics of Photocarrier Generation in Electrically Detected Nitrogen-Vacancy-Based Quantum Sensing

Hiroki Morishita, Naoya Morioka, Testuri Nishikawa, Hajime Yao, Shinobu Onoda, Hiroshi Abe, Takeshi Ohshima, Norikazu Mizuochi

Physical Review Applied　19　(3)　2023/03/20
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevapplied.19.034061 　

eISSN： 2331-7019
Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment

Tetta Suzuki, Yuichi Yamazaki, Takashi Taniguchi, Kenji Watanabe, Yusuke Nishiya, Yu-ichiro Matsushita, Kazuya Harii, Yuta Masuyama, Yasuto Hijikata, Takeshi Ohshima

Applied Physics Express　16　(3)　032006-032006　2023/03/01
Publisher: IOP Publishing
DOI： 10.35848/1882-0786/acc442 　

ISSN： 1882-0778

eISSN： 1882-0786

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Abstract Negatively charged boron vacancy (V _B ^–) in hexagonal boron nitride has attracted attention as a promising spin defect for quantum sensing applications. Hence, a fabrication method for generation of V _B ^– with superior spin properties would be desirable. In this study, we demonstrated V _B ^– formation by two thermal treatment methods. Both methods improve the signal-to-noise ratio of optically detected magnetic resonance signal by a factor of 4. Furthermore, a zero-field splitting parameter E which reflects crystal distortion after irradiation significantly reduces for irradiation above 650 °C. These findings indicate that thermal treatment is an effective method for a V _B ^– based quantum sensor.
Effects of He ion and electron beam irradiations on CdTe solar cell dosimeter in substrate configuration

Tamotsu OKAMOTO, Fumiya Furumaki, Eiku Sato, Ippei Isogai, Yuji Kurimoto, Yasuki Okuno, Mitsuru Imaizumi, Masafumi Akiyoshi, Takeshi OHSHIMA

Japanese Journal of Applied Physics　2023/02/21
Publisher: IOP Publishing
DOI： 10.35848/1347-4065/acbd92 　

ISSN： 0021-4922

eISSN： 1347-4065

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Abstract In this work, the effects of He ion and electron beam irradiations to the substrate-type CdTe solar cells, which was suitable for the detection of alpha and beta radiation, were investigated. He ion irradiation revealed that the induced current proportionally increased with the increase of He ion current and that it was possible to detect alpha radiation using the substrate-type CdTe solar cell dosimeter. Next, the electron irradiation effects were investigated. The induced current proportional to the electron flux was also observed, and the sensitivity depended on the electron energy. In addition, the degradation of substrate-type CdTe solar cell dosimeter by electron beam irradiation was investigated. No significant degradation in short-circuit current was observed by the electron irradiation of 3×10¹⁶ cm^-2 at 200 keV and 1×10¹⁶ cm^-2 at 400 keV. This result suggests that the substrate-type CdTe solar cell dosimeter is sufficiently resistant to electron irradiation.
Broadband microwave antenna for uniform manipulation of millimeter-scale volumes of diamond quantum sensors

Y. Takemura, K. Hayashi, Y. Yoshii, M. Saito, S. Onoda, H. Abe, T. Ohshima, T. Taniguchi, M. Fujiwara, H. Morishita, I. Ohki, N. Mizuochi

Journal of Applied Physics　132　(22)　224501-224501　2022/12/14
Publisher: AIP Publishing
DOI： 10.1063/5.0128406 　

ISSN： 0021-8979

eISSN： 1089-7550

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Quantum sensors based on nitrogen-vacancy (NV) centers in diamond are expected to demonstrate a wide variety of applications. For high-sensitivity quantum sensors with NV center ensembles, uniform manipulation of the electron spins of the NV centers in large volumes is required. In addition, a broad microwave frequency bandwidth for manipulating the NV centers' electron spin is necessary for vector magnetometry and measurement under a finite static magnetic field. Here, we demonstrate a broadband microwave antenna for uniform manipulation of millimeter-scale volumes of diamond quantum sensors. The simulation shows that the current is distributed at both edges of the loop coil of a single copper plate due to the skin effect. The loop coil acts like a Helmholtz coil, which realizes uniformity in the z-direction of the microwave magnetic field ( B₁). The plate structure has a higher mechanical stability, durability, and a larger heat capacity than the Helmholtz coil, due to its large volume. The antenna achieves a higher performance than previously reported antennae, with a maximal B₁ of 4.5 G, a broad bandwidth of 287 ± 6 MHz, and a peak-to-peak variation of [Formula: see text] over a 3.1 mm³ cylinder volume. These performances show that the presented antenna is suitable for manipulating solid-state spin ensembles for high-sensitivity quantum sensors.
Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

Shin-ichiro Sato, Shuo Li, Andrew D. Greentree, Manato Deki, Tomoaki Nishimura, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Brant C. Gibson, Takeshi Ohshima

Scientific Reports　12　(1)　2022/12/08
Publisher: Springer Science and Business Media LLC
DOI： 10.1038/s41598-022-25522-6 　

eISSN： 2045-2322

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Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to ³P₀-³F₂ transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.
Nitrogen related paramagnetic defects: Decoherence source of ensemble of NV− center Peer-reviewed

Chikara Shinei, Yuta Masuyama, Masashi Miyakawa, Hiroshi Abe, Shuya Ishii, Seiichi Saiki, Shinobu Onoda, Takashi Taniguchi, Takeshi Ohshima, Tokuyuki Teraji

Journal of Applied Physics　2022/12/07

DOI： 10.1063/5.0103332 　
Electrical detection of nuclear spins via silicon vacancies in silicon carbide at room temperature

Tetsuri Nishikawa, Naoya Morioka, Hiroshi Abe, Hiroki Morishita, Takeshi Ohshima, Norikazu Mizuochi

Applied Physics Letters　121　(18)　184005-184005　2022/10/31
Publisher: AIP Publishing
DOI： 10.1063/5.0115928 　

ISSN： 0003-6951

eISSN： 1077-3118

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Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attractive systems for quantum information and quantum sensor devices with excellent spin properties at room temperature. In addition, nuclear spins in crystals are expected to serve as the quantum memory and to enhance the sensitivity of quantum sensors with the combination with color centers as a result of an extremely long spin coherence time. Although the spin state of both color centers and nuclear spins coupled through hyperfine interactions is usually optically read out, an electrical readout technique is important for miniaturizing and integrating devices. In the present study, we report the electrical detection of silicon vacancy (V2) centers in 4H-SiC by photocurrent-detected magnetic resonance (PDMR) using a frequency-sweep technique. We electrically observe the spin coherence of the V2 centers and clearly resolve the hyperfine splitting of the electron spin signal for the V2 centers coupled with next-nearest-neighbor ²⁹Si atoms. In addition, we apply PDMR to electron–nuclear double resonance (PD-ENDOR) to detect nuclear magnetic resonance of ²⁹Si at room temperature and find that this method can resolve nuclear spins coupled with neighboring electron spins in the V2 centers. The realization of PD-ENDOR is expected to be a critical step toward the development of electrically driven integrated quantum devices.
Transfer-printing-based integration of silicon nitride grating structure on single-crystal diamond toward sensitive magnetometers

Ryota Katsumi, Takeshi Hizawa, Akihiro Kuwahata, Shun Naruse, Yuji Hatano, Takayuki Iwasaki, Mutsuko Hatano, Fedor Jelezko, Shinobu Onoda, Takeshi Ohshima, Masaki Sekino, Takashi Yatsui

Applied Physics Letters　121　(16)　161103-161103　2022/10/17
Publisher: AIP Publishing
DOI： 10.1063/5.0107854 　

ISSN： 0003-6951

eISSN： 1077-3118

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Negatively charged nitrogen-vacancy (NV) centers in diamond have emerged as promising candidates for a wide range of quantum applications, especially quantum sensing of magnetic field. Implementation of nanostructure into diamond is powerful for efficient photon collection of NV centers and chip-scale miniaturization of the device, which is crucial for sensitive and practical diamond magnetometers. However, fabrication of the diamond nanostructure involves technical limitations and can degrade the spin coherence of the NV centers. In this study, we demonstrate the hybrid integration of a silicon nitride grating structure on a single-crystal diamond by utilizing transfer printing. This approach allows the implementation of the nanostructure in diamond using a simple pick-and-place assembly, facilitating diamond-based quantum applications without any complicated diamond nanofabrication. We observed the intensity enhancement in the collected NV emissions both theoretically and experimentally using the integrated grating structure. By applying the increased photon intensity, we demonstrate the improved magnetic sensitivity of the fabricated device. The proposed hybrid integration approach will offer a promising route toward a compact and sensitive diamond NV-based magnetometer.
Structural analysis of high-energy implanted Ni atoms into Si(100) by X-ray absorption fine structure spectroscopy

Shiro Entani, Shin-ichiro Sato, Mitsunori Honda, Chihiro Suzuki, Tomitsugu Taguchi, Shunya Yamamoto, Takeshi Ohshima

Radiation Physics and Chemistry　199　110369-110369　2022/10
Publisher: Elsevier BV
DOI： 10.1016/j.radphyschem.2022.110369 　

ISSN： 0969-806X
High-precision robust monitoring of charge/discharge current over a wide dynamic range for electric vehicle batteries using diamond quantum sensors

Yuji Hatano, Jaewon Shin, Junya Tanigawa, Yuta Shigenobu, Akimichi Nakazono, Takeharu Sekiguchi, Shinobu Onoda, Takeshi Ohshima, Keigo Arai, Takayuki Iwasaki, Mutsuko Hatano

Scientific Reports　12　(1)　2022/09/06
Publisher: Springer Science and Business Media LLC
DOI： 10.1038/s41598-022-18106-x 　

eISSN： 2045-2322

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Abstract Accurate prediction of the remaining driving range of electric vehicles is difficult because the state-of-the-art sensors for measuring battery current are not accurate enough to estimate the state of charge. This is because the battery current of EVs can reach a maximum of several hundred amperes while the average current is only approximately 10 A, and ordinary sensors do not have an accuracy of several tens of milliamperes while maintaining a dynamic range of several hundred amperes. Therefore, the state of charge has to be estimated with an ambiguity of approximately 10%, which makes the battery usage inefficient. This study resolves this limitation by developing a diamond quantum sensor with an inherently wide dynamic range and high sensitivity for measuring the battery current. The design uses the differential detection of two sensors to eliminate in-vehicle common-mode environmental noise, and a mixed analog–digital control to trace the magnetic resonance microwave frequencies of the quantum sensor without deviation over a wide dynamic range. The prototype battery monitor was fabricated and tested. The battery module current was measured up to 130 A covering WLTC driving pattern, and the accuracy of the current sensor to estimate battery state of charge was analyzed to be 10 mA, which will lead to 0.2% CO₂ reduction emitted in the 2030 WW transportation field. Moreover, an operating temperature range of − 40 to + 85 °C and a maximum current dynamic range of ± 1000 A were confirmed.
Millimetre-scale magnetocardiography of living rats with thoracotomy

Keigo Arai, Akihiro Kuwahata, Daisuke Nishitani, Ikuya Fujisaki, Ryoma Matsuki, Yuki Nishio, Zonghao Xin, Xinyu Cao, Yuji Hatano, Shinobu Onoda, Chikara Shinei, Masashi Miyakawa, Takashi Taniguchi, Masatoshi Yamazaki, Tokuyuki Teraji, Takeshi Ohshima, Mutsuko Hatano, Masaki Sekino, Takayuki Iwasaki

Communications Physics　5　(1)　2022/08/23
Publisher: Springer Science and Business Media LLC
DOI： 10.1038/s42005-022-00978-0 　

eISSN： 2399-3650

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Abstract Magnetocardiography is a contactless imaging modality for electric current propagation in the cardiovascular system. Although conventional sensors provide sufficiently high sensitivity, their spatial resolution is limited to a centimetre-scale, which is inadequate for revealing the intra-cardiac electrodynamics such as rotational waves associated with ventricular arrhythmias. Here, we demonstrate invasive magnetocardiography of living rats at a millimetre-scale using a quantum sensor based on nitrogen-vacancy centres in diamond. The acquired magnetic images indicate that the cardiac signal source is well explained by vertically distributed current dipoles, pointing from the right atrium base via the Purkinje fibre bundle to the left ventricular apex. We also find that this observation is consistent with and complementary to an alternative picture of electric current density distribution calculated with a stream function method. Our technique will enable the study of the origin and progression of various cardiac arrhythmias, including flutter, fibrillation, and tachycardia.
Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

Keisuke Yamane, Yuito Maki, Shun One, Akihiro Wakahara, Emil Mihai Pavelescu, Takeshi Ohshima, Tetsuya Nakamura, Mitsuru Imaizumi

Journal of Applied Physics　132　(6)　2022/08/14

DOI： 10.1063/5.0096345 　

ISSN： 0021-8979

eISSN： 1089-7550
Magnetic-field-dependent stimulated emission from nitrogen-vacancy centers in diamond

Felix A. Hahl, Lukas Lindner, Xavier Vidal, Tingpeng Luo, Takeshi Ohshima, Shinobu Onoda, Shuya Ishii, Alexander M. Zaitsev, Marco Capelli, Brant C. Gibson, Andrew D. Greentree, Jan Jeske

Science Advances　2022/06/03

DOI： 10.1126/sciadv.abn7192 　
Creation of multiple NV centers by phthalocyanine ion implantation

Kosuke Kimura, Shinobu Onoda, Keisuke Yamada, Wataru Kada, Tokuyuki Teraji, Junichi Isoya, Osamu Hanaizumi, Takeshi Ohshima

Applied Physics Express　15　(6)　2022/06

DOI： 10.35848/1882-0786/ac7030 　

ISSN： 1882-0778

eISSN： 1882-0786
Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Naoya Morioka, Di Liu, Öney O. Soykal, Izel Gediz, Charles Babin, Rainer Stöhr, Takeshi Ohshima, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, Jörg Wrachtrup

Physical Review Applied　17　(5)　2022/05/03
Publisher: American Physical Society ({APS})
DOI： 10.1103/PhysRevApplied.17.054005 　
Displacement damage dose analysis of the output characteristics of In0.5Ga0.5P and Cu(In,Ga)(S,Se)(2) solar cells irradiated with alpha ray simulated helium ions

Mitsuru Imaizumi, Yasuki Okuno, Tatsuya Takamoto, Shin-ichiro Sato, Takeshi Ohshima

JAPANESE JOURNAL OF APPLIED PHYSICS　61　(4)　2022/04

DOI： 10.35848/1347-4065/ac48d6 　

ISSN： 0021-4922

eISSN： 1347-4065
Anomalous Formation of Irradiation-Induced Nitrogen-Vacancy Centers in 5 nm-Sized Detonation Nanodiamonds

Frederick T.-K. So, Alexander I. Shames, Daiki Terada, Takuya Genjo, Hiroki Morishita, Izuru Ohki, Takeshi Ohshima, Shinobu Onoda, Hideaki Takashima, Shigeki Takeuchi, Norikazu Mizuochi, Ryuji Igarashi, Masahiro Shirakawa, Takuya F. Segawa

The Journal of Physical Chemistry C　126　(11)　5206-5217　2022/03/24
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.jpcc.1c10466 　

ISSN： 1932-7447

eISSN： 1932-7455
Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs Peer-reviewed

Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda

Applied Physics Letters　2022/02/07

DOI： 10.1063/5.0078189 　
Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

Keisuke Yamane, Ryo Futamura, Shigeto Genjo, Daiki Hamamoto, Yuito Maki, Emil Mihai Pavelescu, Takeshi Ohshima, Taishi Sumita, Mitsuru Imaizumi, Akihiro Wakahara

JAPANESE JOURNAL OF APPLIED PHYSICS　61　(2)　2022/02

DOI： 10.35848/1347-4065/ac4a06 　

ISSN： 0021-4922

eISSN： 1347-4065
Linear energy transfer (LET) spectroscopy and relative biological effect estimation by SiC-based dosimeter at clinical carbon-beam cancer therapy field

Kohei Yamaguchi, Rio Yanagisawa, Kohei Osaki, Yuya Ohki, Akihiko Matsumura, Makoto Sakai, Takahiro Makino, Takeshi Ohshima, Wataru Kada

Journal of Physics: Conference Series　2326　(1)　2022

DOI： 10.1088/1742-6596/2326/1/012015 　

ISSN： 1742-6588

eISSN： 1742-6596
炭素線がん治療場における臨床線量推定を目的としたSiC半導体検出器の開発

松本卓己, 山口皐平, 柳澤理央, 窪寺敬, 新井優大, 横田凌, 大島武, 牧野高紘, 酒井真理, 松村彰彦, 加田渉

アイソトープ・放射線研究発表会　2　96　2022
Publisher: 公益社団法人日本アイソトープ協会
DOI： 10.50955/happyokai.2.0_96 　

eISSN： 2436-4487
SiC-SBDを用いた炭素線がん治療場における放射線誘起電流測定

窪寺敬, 新井優大, 山口皐平, 横田凌, 松本卓己, 大島武, 牧野高紘, 酒井真理, 松村彰彦, 加田渉

アイソトープ・放射線研究発表会　2　95　2022
Publisher: 公益社団法人日本アイソトープ協会
DOI： 10.50955/happyokai.2.0_95 　

eISSN： 2436-4487
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability

K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, T. Tanigawa, S. Ikeda, T. Shinada, H. Koike, T. Endoh, T. Makino, T. Ohshima

IEEE International Reliability Physics Symposium Proceedings　2022-March　P541-P545　2022

DOI： 10.1109/IRPS48227.2022.9764491 　

ISSN： 1541-7026
Equilibrium charge state of NV centers in diamond

Chikara Shinei, Masashi Miyakawa, Shuya Ishii, Seiichi Saiki, Shinobu Onoda, Takashi Taniguchi, Takeshi Ohshima, Tokuyuki Teraji

Applied Physics Letters　119　(25)　2021/12/20

DOI： 10.1063/5.0079687 　

ISSN： 0003-6951
Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation Peer-reviewed

Shuya Ishii, Seiichi Saiki, Shinobu Onoda, Yuta Masuyama, Hiroshi Abe, Takeshi Ohshima

Quantum Beam Science　2021/12

DOI： 10.3390/qubs6010002 　
Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

R. A. Parker, N. Dontschuk, S. I. Sato, C. T.-K. Lew, P. Reineck, A. Nadarajah, T. Ohshima, B. C. Gibson, S. Castelletto, J. C. McCallum, B. C. Johnson

Journal of Applied Physics　130　(14)　2021/10/14
Publisher: American Institute of Physics Inc.
DOI： 10.1063/5.0055100 　

ISSN： 1089-7550 0021-8979
Study on Alpha-Particle Resistance of InGaP Solar Cell for Dosimeter Application

Imaizmi Mitsuru, Okuno Yasuki, Sato Shin-Ichiro, Ohshima Takeshi

Proceedings of the Annual Meeting of the Japan Photovoltaic Society　1　100-100　2021/10/12
Publisher: The Japan Photovoltaic Society
DOI： 10.57295/jpvsproc.1.0_100 　

eISSN： 2436-6498
M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

I. Capan, T. Brodar, R. Bernat, Pastuović, T. Makino, T. Ohshima, J. D. Gouveia, J. Coutinho

Journal of Applied Physics　130　(12)　2021/09/28
Publisher: American Institute of Physics Inc.
DOI： 10.1063/5.0064958 　

ISSN： 1089-7550 0021-8979
Non-contact measurement of internal body temperature using subcutaneously implanted diamond microparticles. International-journal

Kiichi Kaminaga, Hiromi Yanagihara, Takuya Genjo, Takamitsu Morioka, Hiroshi Abe, Masahiro Shirakawa, Takeshi Ohshima, Shizuko Kakinuma, Ryuji Igarashi

Biomaterials science　9　(21)　7049-7053　2021/09/28

DOI： 10.1039/d1bm01187a 　

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We constructed a highly sensitive fluorescence wide-field imaging system with a microwave source, implanted fluorescent diamond microparticles ("microdiamonds") subcutaneously into the dorsal skin of a mouse after sacrifice, and demonstrated the feasibility of using optically detected magnetic resonance (ODMR) to measure internal body temperature in a mammal.
Deep levels related to the carbon antisite-vacancy pair in 4H-SiC

Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son

Journal of Applied Physics　130　(6)　2021/08/14
Publisher: American Institute of Physics Inc.
DOI： 10.1063/5.0059953 　

ISSN： 1089-7550 0021-8979
All-Optical Wide-Field Selective Imaging of Fluorescent Nanodiamonds in Cells, In Vivo and Ex Vivo. International-journal

Tamami Yanagi, Kiichi Kaminaga, Michiyo Suzuki, Hiroshi Abe, Hiroki Yamamoto, Takeshi Ohshima, Akihiro Kuwahata, Masaki Sekino, Tatsuhiko Imaoka, Shizuko Kakinuma, Takuma Sugi, Wataru Kada, Osamu Hanaizumi, Ryuji Igarashi

ACS nano　2021/08/02

DOI： 10.1021/acsnano.0c07740 　

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Fluorescence imaging is a critical tool to understand the spatial distribution of biomacromolecules in cells and in vivo, providing information on molecular dynamics and interactions. Numerous valuable insights into biological systems have been provided by the specific detection of various molecular species. However, molecule-selective detection is often hampered by background fluorescence, such as cell autofluorescence and fluorescence leakage from molecules stained by other dyes. Here we describe a method for all-optical selective imaging of fluorescent nanodiamonds containing nitrogen-vacancy centers (NVCs) for wide-field fluorescence bioimaging. The method is based on the fact that the fluorescence intensity of NVCs strictly depends on the configuration of ground-state electron spins, which can be controlled by changing the pulse recurrence intervals of microsecond excitation laser pulses. Therefore, by using regulated laser pulses, we can oscillate the fluorescence from NVCs in a nanodiamond, while oscillating other optical signals in the opposite phase to NVCs. As a result, we can reconstruct a selective image of a nanodiamond by using a series of oscillated fluorescence images. We demonstrate application of the method to the selective imaging of nanodiamonds in live cells, in microanimals, and on a hippocampal slice culture obtained from a rat. Our approach potentially enables us to achieve high-contrast images of nanodiamond-labeled biomolecules with a signal-to-background ratio improved by up to 100-fold over the standard fluorescence image, thereby providing a more powerful tool for the investigation of molecular dynamics in cells and in vivo.
Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

Konosuke Shimazaki, Hiroki Kawaguchi, Hideaki Takashima, Takuya Fabian Segawa, Frederick T.-K. So, Daiki Terada, Shinobu Onoda, Takeshi Ohshima, Masahiro Shirakawa, Shigeki Takeuchi

physica status solidi (a)　2100144-2100144　2021/07/29
Publisher: Wiley
DOI： 10.1002/pssa.202100144 　

ISSN： 1862-6300

eISSN： 1862-6319
Creation of silicon vacancy color centers with a narrow emission line in nanodiamonds by ion implantation

Hideaki Takashima, Atsushi Fukuda, Konosuke Shimazaki, Yusuke Iwabata, Hiroki Kawaguchi, Andreas W. Schell, Toshiyuki Tashima, Hiroshi Abe, Shinobu Onoda, Takeshi Ohshima, Shigeki Takeuchi

Optical Materials Express　11　(7)　1978-1978　2021/07/01
Publisher: The Optical Society
DOI： 10.1364/ome.424786 　

eISSN： 2159-3930
Evaluation of Damage Coefficient for Minority-Carrier Diffusion Length of Triple-Cation Perovskite Solar Cells under 1 MeV Electron Irradiation for Space Applications

Yu Miyazawa, Gyu Min Kim, Ayumi Ishii, Masashi Ikegami, Tsutomu Miyasaka, Yudai Suzuki, Tomoyuki Yamamoto, Takeshi Ohshima, Shusaku Kanaya, Hiroyuki Toyota, Kazuyuki Hirose

The Journal of Physical Chemistry C　125　(24)　13131-13137　2021/06/24
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.jpcc.1c01590 　

ISSN： 1932-7447

eISSN： 1932-7455
Effects of Beam Conditions in Ground Irradiation Tests on Degradation of Photovoltaic Characteristics of Space Solar Cells

Mitsuru Imaizumi, Takeshi Ohshima, Yosuke Yuri, Kohtaku Suzuki, Yoshifumi Ito

Quantum Beam Science　5　(2)　15-15　2021/05/20
Publisher: MDPI AG
DOI： 10.3390/qubs5020015 　

eISSN： 2412-382X

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We investigated the effects of irradiation beam conditions on the performance degradation of silicon and triple-junction solar cells for use in space. The fluence rates of electron and proton beams were varied. Degradation did not depend on the fluence rate of protons for both cells. A higher fluence rate of electrons caused greater degradation of the Si cell, but the dependence was due to the temperature increase during irradiation. Two beam-area expansion methods, defocusing and scanning, were examined for proton irradiation of various energies (50 keV–10 MeV). In comparing the output degradation from irradiation with defocused and scanned proton beams, no significant difference in degradation was found for any proton energy. We plan to reflect these findings into ISO standard of irradiation test method of space solar cells.
Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces

Yasuto Hijikata, Shota Komori, Shunsuke Otojima, Yu-Ichiro Matsushita, Takeshi Ohshima

Applied Physics Letters　118　(20)　2021/05/17
Publisher: American Institute of Physics Inc.
DOI： 10.1063/5.0048772 　

ISSN： 0003-6951
Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin, Di Liu, Vadim Vorobyov, Matthias Niethammer, Matthias Widmann, Tobias Linkewitz, Izel Gediz, Rainer Stöhr, Heiko B. Weber, Takeshi Ohshima, Misagh Ghezellou, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, Jörg Wrachtrup

Applied Physics Letters　118　(14)　2021/04/05
Publisher: American Institute of Physics Inc.
DOI： 10.1063/5.0046563 　

ISSN： 0003-6951
Multimodal Imaging and Soft X-Ray Tomography of Fluorescent Nanodiamonds in Cancer Cells

Philipp Reineck, Amanda N. Abraham, Arpita Poddar, Ravi Shukla, Hiroshi Abe, Takeshi Ohshima, Brant C. Gibson, Chaitali Dekiwadia, José J. Conesa, Eva Pereiro, Amy Gelmi, Gary Bryant

Biotechnology Journal　16　(3)　2021/03

DOI： 10.1002/biot.202000289 　

ISSN： 1860-6768

eISSN： 1860-7314
Effects of He Ion and Electron Beam Irradiation on Substrate-type CdTe Solar Cell Dosimeter

Okamoto Tamotsu, Furumaki Fumi, Sato Eiku, Okuno Yasuki, Imaizumi Mitsuru, Akiyoshi Masafumi, Ohshima Takeshi, Kobayashi Tomohiro, Gotoh Yasuhito

JSAP Annual Meetings Extended Abstracts　2021.1　2494-2494　2021/02/26
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2021.1.0_2494 　

eISSN： 2436-7613
Study on Radiation Degradation of an InGaP Solar Cell by Alpha-Particles -II

Imaizumi Mitsuru, Okuno Yasuki, Sato Sin-ichiro, Ohshima Takeshi

JSAP Annual Meetings Extended Abstracts　2021.1　2472-2472　2021/02/26
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2021.1.0_2472 　

eISSN： 2436-7613
Neutron flux detection using InGaP solar cell covered over boron converter

Okuno Yasuki, Imaizumi Mitsuru, Kobayashi Tomohiro, Okamoto Tamotsu, Akiyoshi Masafumi, Gotoh Yasuhito, Makino Takahiro, Oshima Takeshi, Kondo Sosuke, Yu Hao, Kasada Ryuta

JSAP Annual Meetings Extended Abstracts　2021.1　441-441　2021/02/26
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2021.1.0_441 　

eISSN： 2436-7613
Room-temperature hyperpolarization of polycrystalline samples with optically polarized triplet electrons: pentacene or nitrogen-vacancy center in diamond?

Koichiro Miyanishi, Takuya F. Segawa, Kazuyuki Takeda, Izuru Ohki, Shinobu Onoda, Takeshi Ohshima, Hiroshi Abe, Hideaki Takashima, Shigeki Takeuchi, Alexander I. Shames, Kohki Morita, Yu Wang, Frederick T.-K. So, Daiki Terada, Ryuji Igarashi, Akinori Kagawa, Masahiro Kitagawa, Norikazu Mizuochi, Masahiro Shirakawa, Makoto Negoro

Magnetic Resonance　2　(1)　33-48　2021/02/17
Publisher: Copernicus GmbH
DOI： 10.5194/mr-2-33-2021 　

eISSN： 2699-0016

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Abstract. We demonstrate room-temperature 13C hyperpolarization by dynamic nuclear polarization (DNP) using optically polarized triplet electron spins in two polycrystalline systems: pentacene-doped [carboxyl-13C] benzoic acid and microdiamonds containing nitrogen-vacancy (NV−) centers. For both samples, the integrated solid effect (ISE) is used to polarize the 13C spin system in magnetic fields of 350–400 mT. In the benzoic acid sample, the 13C spin polarization is enhanced by up to 0.12 % through direct electron-to-13C polarization transfer without performing dynamic 1H polarization followed by 1H−13C cross-polarization. In addition, the ISE has been successfully applied to polarize naturally abundant 13C spins in a microdiamond sample to 0.01 %. To characterize the buildup of the 13C polarization, we discuss the efficiencies of direct polarization transfer between the electron and 13C spins as well as that of 13C−13C spin diffusion, examining various parameters which are beneficial or detrimental for successful bulk dynamic 13C polarization.
Gradiometer Using Separated Diamond Quantum Magnetometers

Yuta Masuyama, Katsumi Suzuki, Akira Hekizono, Mitsuyasu Iwanami, Mutsuko Hatano, Takayuki Iwasaki, Takeshi Ohshima

Sensors　21　(3)　977-977　2021/02/02
Publisher: MDPI AG
DOI： 10.3390/s21030977 　

eISSN： 1424-8220

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The negatively charged nitrogen-vacancy (NV) center in diamonds is known as the spin defect and using its electron spin, magnetometry can be realized even at room temperature with extremely high sensitivity as well as a high dynamic range. However, a magnetically shielded enclosure is usually required to sense weak magnetic fields because environmental magnetic field noises can disturb high sensitivity measurements. Here, we fabricated a gradiometer with variable sensor length that works at room temperature using a pair of diamond samples containing negatively charged NV centers. Each diamond is attached to an optical fiber to enable free sensor placement. Without any magnetically shielding, our gradiometer realizes a magnetic noise spectrum comparable to that of a three-layer magnetically shielded enclosure, reducing the noises at the low-frequency range below 1 Hz as well as at the frequency of 50 Hz (power line frequency) and its harmonics. These results indicate the potential of highly sensitive magnetic sensing by the gradiometer using the NV center for applications in noisy environments such as outdoor and in vehicles.
Optical properties of neodymium ions in nanoscale regions of gallium nitride: erratum

Shin-Ichiro Sato, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Tomoaki Nishimura, Brant C. Gibson, Andrew D. Greentree, Hiroshi Amano, Takeshi Ohshima

Optical Materials Express　11　(2)　524-524　2021/02/01
Publisher: OSA - The Optical Society
DOI： 10.1364/OME.420328 　

ISSN： 2159-3930
Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide

Takuma Narahara, Shin-Ichiro Sato, Kazutoshi Kojima, Yasuto Hijikata, Takeshi Ohshima

Applied Physics Express　14　(2)　2021/02/01
Publisher: IOP Publishing Ltd
DOI： 10.35848/1882-0786/abdc9e 　

ISSN： 1882-0786 1882-0778
Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices

Tuan Minh Hoang, Hitoshi Ishiwata, Yuta Masuyama, Yuichi Yamazaki, Kazutoshi Kojima, Sang-Yun Lee, Takeshi Ohshima, Takayuki Iwasaki, Digh Hisamoto, Mutsuko Hatano

Applied Physics Letters　118　(4)　044001-044001　2021/01/25
Publisher: AIP Publishing
DOI： 10.1063/5.0027603 　

ISSN： 0003-6951

eISSN： 1077-3118
Photoluminescence at the ground-state level anticrossing of the nitrogen-vacancy center in diamond: A comprehensive study

Viktor Ivády, Huijie Zheng, Arne Wickenbrock, Lykourgos Bougas, Georgios Chatzidrosos, Kazuo Nakamura, Hitoshi Sumiya, Takeshi Ohshima, Junichi Isoya, Dmitry Budker, Igor A. Abrikosov, Adam Gali

Physical Review B　103　(3)　2021/01/20
Publisher: American Physical Society
DOI： 10.1103/PhysRevB.103.035307 　

ISSN： 2469-9969 2469-9950
Simultaneous thermometry and magnetometry using a fiber-coupled quantum diamond sensor

Yuji Hatano, Jaewon Shin, Daisuke Nishitani, Haruki Iwatsuka, Yuta Masuyama, Hiroki Sugiyama, Makoto Ishii, Shinobu Onoda, Takeshi Ohshima, Keigo Arai, Takayuki Iwasaki, Mutsuko Hatano

Applied Physics Letters　118　(3)　034001-034001　2021/01/18
Publisher: AIP Publishing
DOI： 10.1063/5.0031502 　

ISSN： 0003-6951

eISSN： 1077-3118
Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

Yuichi Yamazaki, Yoji Chiba, Shin-Ichiro Sato, Takahiro Makino, Naoto Yamada, Takahiro Satoh, Kazutoshi Kojima, Yasuto Hijikata, Hidekazu Tsuchida, Norihiro Hoshino, Sang-Yun Lee, Takeshi Ohshima

Applied Physics Letters　118　(2)　2021/01/11
Publisher: American Institute of Physics Inc.
DOI： 10.1063/5.0028318 　

ISSN： 0003-6951
Displacement Damage Dose Analysis on Alfa-ray Degradation of Output of a CIGS Solar Cell

Mitsuru Imaizumi, Yasuki Okuno, Shin-ichiro Sato, Takeshi Ohshima

2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)　1876-1879　2021

DOI： 10.1109/PVSC43889.2021.9518453 　

ISSN： 0160-8371
An SRAM SEU Cross Section Curve Physics Model

Daisuke Kobayashi, Kazuyuki Hirose, Keita Sakamoto, Yuta Tsuchiya, Shogo Okamoto, Shunsuke Baba, Hiroyuki Shindou, Osamu Kawasaki, Takahiro Makino, Takeshi Ohshima

IEEE Transactions on Nuclear Science　1-1　2021
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI： 10.1109/tns.2021.3129185 　

ISSN： 0018-9499

eISSN： 1558-1578
Near-Infrared Fluorescence from Silicon- and Nickel-Based Color Centers in High-Pressure High-Temperature Diamond Micro- and Nanoparticles

Alexander I. Shames, Adamos Dalis, Andrew D. Greentree, Brant C. Gibson, Hiroshi Abe, Takeshi Ohshima, Olga Shenderova, Alexander Zaitsev, Philipp Reineck

Advanced Optical Materials　8　(23)　2020/12/03

DOI： 10.1002/adom.202001047 　

eISSN： 2195-1071
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Naoya Morioka, Charles Babin, Roland Nagy, Izel Gediz, Erik Hesselmeier, Di Liu, Matthew Joliffe, Matthias Niethammer, Durga Dasari, Vadim Vorobyov, Roman Kolesov, Rainer Stöhr, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Péter Udvarhelyi, Gergő Thiering, Adam Gali, Jörg Wrachtrup, Florian Kaiser

Nature Communications　2020/12

DOI： 10.1038/s41467-020-16330-5 　
Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Daniil M. Lukin, Alexander D. White, Rahul Trivedi, Melissa A. Guidry, Naoya Morioka, Charles Babin, Öney O. Soykal, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Praful K. Vasireddy, Mamdouh H. Nasr, Shuo Sun, Jean-Philippe W. MacLean, Constantin Dory, Emilio A. Nanni, Jörg Wrachtrup, Florian Kaiser, Jelena Vučković

npj Quantum Information　2020/12

DOI： 10.1038/s41534-020-00310-0 　
Entanglement and control of single nuclear spins in isotopically engineered silicon carbide

Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao, Mykyta Onizhuk, He Ma, Alexander L. Crook, Hiroshi Abe, Jawad Ul-Hassan, Takeshi Ohshima, Nguyen T. Son, Giulia Galli, David D. Awschalom

Nature Materials　19　(12)　1319-1325　2020/12

DOI： 10.1038/s41563-020-00802-6 　

ISSN： 1476-1122

eISSN： 1476-4660
Fluorescent Nanodiamonds Embedded in Poly-ϵ-Caprolactone Fibers as Biomedical Scaffolds

Vincenzo Guarino, Iriczalli Cruz-Maya, Philipp Reineck, Hiroshi Abe, Takeshi Ohshima, Kate Fox, Andrew D. Greentree, Brant C. Gibson, Luigi Ambrosio

ACS Applied Nano Materials　3　(11)　10814-10822　2020/11/25

DOI： 10.1021/acsanm.0c02103 　

eISSN： 2574-0970
Bright Nitrogen-Vacancy Centers in Diamond Inverted Nanocones

Seong-Woo Jeon, Junghyun Lee, Hojoong Jung, Sang-Wook Han, Young-Wook Cho, Yong-Su Kim, Hyang-Tag Lim, Yanghee Kim, Matthias Niethammer, Weon Cheol Lim, Jonghan Song, Shinobu Onoda, Takeshi Ohshima, Rolf Reuter, Andrej Denisenko, Joerg Wrachtrup, Sang-Yun Lee

ACS Photonics　7　(10)　2739-2747　2020/10/21
Publisher: American Chemical Society
DOI： 10.1021/acsphotonics.0c00813 　

ISSN： 2330-4022
Development of wide-bandgap semiconductor-based dosimeter for LET distribution measurement in carbon therapy filed

W. Kada, K. Ohsaki, Y. Ohki, Y. Yamazaki, T. Makino, T. Ohshima, A. Mattsumura, M. Sakai

Journal of Physics: Conference Series　1662　(1)　2020/10/16

DOI： 10.1088/1742-6596/1662/1/012015 　

ISSN： 1742-6588

eISSN： 1742-6596
Optical properties of neodymium ions in nanoscale regions of gallium nitride

Shin-Ichiro Sato, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Tomoaki Nishimura, Brant C. Gibson, Andrew D. Greentree, Hiroshi Amano, Takeshi Ohshima

OPTICAL MATERIALS EXPRESS　10　(10)　2614-2623　2020/10

DOI： 10.1364/OME.401765 　

ISSN： 2159-3930
Amplification by stimulated emission of nitrogen-vacancy centres in a diamond-loaded fibre cavity

Sarath Raman Nair, Lachlan J. Rogers, Xavier Vidal, Reece P. Roberts, Hiroshi Abe, Takeshi Ohshima, Takashi Yatsui, Andrew D. Greentree, Jan Jeske, Thomas Volz

Nanophotonics　0　(0)　2020/09/28
Publisher: Walter de Gruyter GmbH
DOI： 10.1515/nanoph-2020-0305 　

ISSN： 2192-8606

eISSN： 2192-8614

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<title>Abstract</title>Laser threshold magnetometry using the negatively charged nitrogen-vacancy (NV⁻) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore a diamond-loaded open tunable fibre-cavity system as a potential contender for the realisation of lasing with NV⁻ centres. We observe amplification of the transmission of a cavity-resonant seed laser at 721 nm when the cavity is pumped at 532 nm and attribute this to stimulated emission. Changes in the intensity of spontaneously emitted photons accompany the amplification, and a qualitative model including stimulated emission and ionisation dynamics of the NV⁻ centre captures the dynamics in the experiment very well. These results highlight important considerations in the realisation of an NV⁻ laser in diamond.
Depth profile analysis of deep level defects in 4h-sic introduced by radiation

Tomislav Brodar, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, Željko Pastuović

Crystals　10　(9)　1-16　2020/09/01
Publisher: MDPI AG
DOI： 10.3390/cryst10090845 　

ISSN： 2073-4352
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

Ivana Capan, Tomislav Brodar, Yuichi Yamazaki, Yuya Oki, Takeshi Ohshima, Yoji Chiba, Yasuto Hijikata, Luka Snoj, Vladimir Radulović

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　478　224-228　2020/09/01
Publisher: Elsevier B.V.
DOI： 10.1016/j.nimb.2020.07.005 　

ISSN： 0168-583X
Universal coherence protection in a solid-state spin qubit

Kevin C. Miao, Joseph P. Blanton, Christopher P. Anderson, Alexandre Bourassa, Alexander L. Crook, Gary Wolfowicz, Hiroshi Abe, Takeshi Ohshima, David D. Awschalom

Science　369　(6509)　1493-1497　2020/09

DOI： 10.1126/SCIENCE.ABC5186 　

ISSN： 0036-8075

eISSN： 1095-9203
Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures Peer-reviewed

Shin-ichiro Sato, Manato Deki, Tomoaki Nishimura, Hiroshi Okada, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Takeshi Ohshima

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms　479　7-12　2020/09
Publisher: Elsevier BV
DOI： 10.1016/j.nimb.2020.06.007 　

ISSN： 0168-583X
Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security

Vladimir Radulović, Yuichi Yamazaki, Željko Pastuović, Adam Sarbutt, Klemen Ambrožič, Robert Bernat, Zoran Ereš, José Coutinho, Takeshi Ohshima, Ivana Capan, Luka Snoj

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment　972　2020/08/21
Publisher: Elsevier B.V.
DOI： 10.1016/j.nima.2020.164122 　

ISSN： 0168-9002
Quantum magnetic sensor using fibre-cavity diamond nitrogen-vacancy centre laser

Sarath Raman Nair, Lachlan J. Rogers, Reece P. Roberts, Thomas Volz, Andrew D. Greentree, Hiroshi Abe, Takeshi Ohshima, Takashi Yatsui, Xavier Vidal, Jan Jeske

2020 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2020 - Proceedings　2020/08

DOI： 10.1364/CLEOPR.2020.P5_17 　
Electron paramagnetic resonance and theoretical study of gallium vacancy in β -Ga<inf>2</inf>O<inf>3</inf>

Nguyen Tien Son, Quoc Duy Ho, Ken Goto, Hiroshi Abe, Takeshi Ohshima, Bo Monemar, Yoshinao Kumagai, Thomas Frauenheim, Peter Deák

Applied Physics Letters　117　(3)　2020/07/20

DOI： 10.1063/5.0012579 　

ISSN： 0003-6951
Displacement Damage Dose Analysis of Alpha-ray Degradation on Output of an InGaP Solar Cell

Mitsuru Imaizumi, Yasuki Okuno, Tatsuya Takamoto, Shin Ichiro Sato, Takeshi Ohshima, Tamotsu Okamoto

Conference Record of the IEEE Photovoltaic Specialists Conference　2020-June　0843-0846　2020/06/14

DOI： 10.1109/PVSC45281.2020.9300777 　

ISSN： 0160-8371
Purcell enhancement of a single silicon carbide color center with coherent spin control

Alexander L. Crook, Christopher P. Anderson, Kevin C. Miao, Alexandre Bourassa, Hope Lee, Sam L. Bayliss, David O. Bracher, Xingyu Zhang, Hiroshi Abe, Takeshi Ohshima, Evelyn L. Hu, David D. Awschalom

Nano Letters　20　(5)　3427-3434　2020/05/13

DOI： 10.1021/acs.nanolett.0c00339 　

ISSN： 1530-6984

eISSN： 1530-6992
Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H - SiC

Péter Udvarhelyi, Gergő Thiering, Naoya Morioka, Charles Babin, Florian Kaiser, Daniil Lukin, Takeshi Ohshima, Jawad Ul-Hassan, Nguyen Tien Son, Jelena Vučković, Jörg Wrachtrup, Adam Gali

Physical Review Applied　2020/05/07

DOI： 10.1103/PhysRevApplied.13.054017 　
Experimental and Theoretical Analysis of Noise Strength and Environmental Correlation Time for Ensembles of Nitrogen-Vacancy Centers in Diamond Peer-reviewed

Kan Hayashi, Yuichiro Matsuzaki, Takaki Ashida, Shinobu Onoda, Hiroshi Abe, Takeshi Ohshima, Mutsuko Hatano, Takashi Taniguchi, Hiroki Morishita, Masanori Fujiwara, Norikazu Mizuochi

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　89　(5)　2020/05

DOI： 10.7566/JPSJ.89.054708 　

ISSN： 0031-9015
Microwave-Free Vector Magnetometry with Nitrogen-Vacancy Centers along a Single Axis in Diamond

Huijie Zheng, Zhiyin Sun, Georgios Chatzidrosos, Chen Zhang, Kazuo Nakamura, Hitoshi Sumiya, Takeshi Ohshima, Junichi Isoya, Jörg Wrachtrup, Arne Wickenbrock, Dmitry Budker

Physical Review Applied　13　(4)　2020/04/01
Publisher: American Physical Society
DOI： 10.1103/PhysRevApplied.13.044023 　

ISSN： 2331-7019
Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

C. Kasper, D. Klenkert, Z. Shang, D. Simin, A. Gottscholl, A. Sperlich, H. Kraus, C. Schneider, S. Zhou, M. Trupke, W. Kada, T. Ohshima, V. Dyakonov, G. V. Astakhov

Physical Review Applied　13　(4)　2020/04

DOI： 10.1103/PhysRevApplied.13.044054 　

eISSN： 2331-7019
A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements

Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Daisuke Kobayashi, Hirokazu Ikeda, Kazuyuki Hirose

QUANTUM BEAM SCIENCE　4　(1)　2020/03

DOI： 10.3390/qubs4010015 　

eISSN： 2412-382X
Fabrication of and Investigation on Grating coupler for the Improvement of Light Extraction Efficiency of Magnetometer with Nitrogen-Vacancy Center in Diamond

Sato Takumi, Kitaizumi Takahiro, Saichi Kota, Kuwahata Akihiro, Igarashi Ryuji, Ohshima Takeshi, Masuyama Yuta, Iwasaki Takayuki, Hating Mutsuko, Making Toshiharu, Yamasaki Satoshi, Jelezko Fedor, Kusakabe Moriaki, Sekino Masaki, Yatsui Takashi

JSAP Annual Meetings Extended Abstracts　2020.1　723-723　2020/02/28
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2020.1.0_723 　

eISSN： 2436-7613
Magnetometer with nitrogen-vacancy center in a bulk diamond for detecting magnetic nanoparticles in biomedical applications. International-journal Peer-reviewed

Akihiro Kuwahata, Takahiro Kitaizumi, Kota Saichi, Takumi Sato, Ryuji Igarashi, Takeshi Ohshima, Yuta Masuyama, Takayuki Iwasaki, Mutsuko Hatano, Fedor Jelezko, Moriaki Kusakabe, Takashi Yatsui, Masaki Sekino

Scientific reports　10　(1)　2483-2483　2020/02/12

DOI： 10.1038/s41598-020-59064-6 　

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We developed a novel magnetometer that employs negatively charged nitrogen-vacancy (NV-) centers in diamond, to detect the magnetic field generated by magnetic nanoparticles (MNPs) for biomedical applications. The compact probe system is integrated into a fiber-optics platform allowing for a compact design. To detect signals from the MNPs effectively, we demonstrated, for the first time, the application of an alternating current (AC) magnetic field generated by the excitation coil of several hundred microteslas for the magnetization of MNPs in diamond quantum sensing. In the lock-in detection system, the minimum detectable AC magnetic field (at a frequency of 1.025 kHz) was approximately 57.6 nT for one second measurement time. We were able to detect the micromolar concentration of MNPs at distances of a few millimeters. These results indicate that the magnetometer with the NV- centers can detect the tiny amounts of MNPs, thereby offering potential for future biomedical applications.
Erratum: Identification of divacancy and silicon vacancy qubits in 6H-SiC (Applied Physics Letters (2019) 114 (112107) DOI: 10.1063/1.5083031)

Joel Davidsson, Viktor Ivády, Rickard Armiento, Takeshi Ohshima, N. T. Son, Adam Gali, Igor A. Abrikosov

Applied Physics Letters　116　(5)　2020/02/03
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.5144728 　

ISSN： 0003-6951
Color centers in wide-gap semiconductors for quantum technology

Y. Yamazaki, S. Onoda, T. Ohshima

Defects in Functional Materials　93-116　2020/01/01
Publisher: World Scientific Publishing Co.
DOI： 10.1142/9789811203176_0004 　
Static and dynamic stark tuning of the silicon vacancy in silicon carbide

Alexander D. White, Daniil M. Lukin, Melissa A. Guidry, Rahul Trivedi, Naoya Morioka, Charles Babin, Florian Kaiser, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Praful Vasireddy, Mamdouh Nasr, Emilio Nanni, Jörg Wrachtrup, Jelena Vuckovic

Optics InfoBase Conference Papers　2020　2020
Publisher: OSA - The Optical Society
DOI： 10.1364/CLEO_QELS.2020.FTu3D.1 　
Radiation hardness of 4h-sic jfets in mgy dose ranges

Akinori Takeyama, Keigo Shimizu, Takahiro Makino, Yuichi Yamazaki, Shin-Ichiro Kuroki, Yasunori Tanaka, Takeshi Ohshima

Materials Science Forum　1004　1109-1114　2020
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.1004.1109 　

ISSN： 1662-9752 0255-5476
The effect of γ-ray irradiation on optical properties of single photon sources in 4h-sic mosfet

Yuta Abe, Takahide Umeda, Mitsuo Okamoto, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima

Materials Science Forum　1004　361-366　2020
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.1004.361 　

ISSN： 1662-9752 0255-5476
Near infrared photoluminescence of ncvsi-centers in high-purity semi-insulating 4h-sic irradiated with energetic charged particles

Shin-Ichiro Sato, Takuma Narahara, Shinobu Onoda, Yuichi Yamazaki, Yasuto Hijikata, Brant C. Gibson, Andrew D. Greentree, Takeshi Ohshima

Materials Science Forum　1004　355-360　2020
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.1004.355 　

ISSN： 1662-9752 0255-5476
Enhancement of ODMR contrasts of silicon vacancy in SiC by thermal treatment

Yoji Chiba, Yuichi Yamazaki, Shin-Ichiro Sato, Takahiro Makino, Naoto Yamada, Takahiro Satoh, Yasuto Hijikata, Takeshi Ohshima

Materials Science Forum　1004　337-342　2020
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.1004.337 　

ISSN： 1662-9752 0255-5476
Effects of nitrogen impurity concentration on nitrogen-vacancy center formation in 4h-sic

Takuma Narahara, Shin-Ichiro Sato, Kazutoshi Kojima, Yuichi Yamazaki, Yasuto Hijikata, Takeshi Ohshima

Materials Science Forum　1004　349-354　2020
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.1004.349 　

ISSN： 1662-9752 0255-5476
Optically detected magnetic resonance study of 3d arrayed silicon vacancies in sic pn diodes

Yamazaki, Y., Chiba, Y., Sato, S.-I., Makino, T., Yamada, N., Satoh, T., Kojima, K., Hijikata, Y., Tsuchida, H., Hoshino, N., Lee, S.-Y., Ohshima, T.

Materials Science Forum　1004 MSF　2020
Publisher: Materials Science Forum
DOI： 10.4028/www.scientific.net/MSF.1004.343 　

ISSN： 1662-9752 0255-5476
Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID

Daisuke Kobayashi, Kazuyuki Hirose, Keita Sakamoto, Shogo Okamoto, Shunsuke Baba, Hiroyuki Shindou, Osamu Kawasaki, Takahiro Makino, Takeshi Ohshima, Yoshiharu Mori, Daisuke Matsuura, Masaki Kusano, Takanori Narita, Shigeru Ishii

IEEE Transactions on Nuclear Science　67　(1)　328-335　2020/01
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI： 10.1109/tns.2019.2956760 　

ISSN： 0018-9499

eISSN： 1558-1578
Magnetic field generation system of the magnetic probe with diamond quantum sensor and ferromagnetic materials for the detection of sentinel lymph nodes with magnetic nanoparticles Peer-reviewed

Takahiro Kitaizumi, Akihiro Kuwahata, Kota Saichi, Takumi Sato, Ryuji Igarashi, Takeshi Ohshima, Yuta Masuyama, Takayuki Iwasaki, Mutsuko Hatano, Fedor Jelezko, Moriaki Kusakabe, Takashi Yatsui, Masaki Sekino

IEEE Transactions on Magnetics　1-1　2020
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI： 10.1109/tmag.2020.3009334 　

ISSN： 0018-9464

eISSN： 1941-0069
Electrical and optical control of single spins integrated in scalable semiconductor devices

Christopher P. Anderson, Alexandre Bourassa, Kevin C. Miao, Gary Wolfowicz, Peter J. Mintun, Alexander L. Crook, Hiroshi Abe, Jawad Ul Hassan, Nguyen T. Son, Takeshi Ohshima, David D. Awschalom

Science　366　(6470)　1225-1230　2019/12/06

DOI： 10.1126/science.aax9406 　

ISSN： 0036-8075

eISSN： 1095-9203
Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions Peer-reviewed

Niethammer Matthias, Widmann Matthias, Rendler Torsten, Morioka Naoya, Chen Yu-Chen, Stoehr Rainer, Ul Hassan Jawad, Onoda Shinobu, Ohshima Takeshi, Lee Sang-Yun, Mukherjee Amlan, Isoya Junichi, Nguyen Tien Son, Wrachtrup Joerg

NATURE COMMUNICATIONS　10　2019/12/05

DOI： 10.1038/s41467-019-13545-z 　

ISSN： 2041-1723
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Roland Nagy, Matthias Niethammer, Matthias Widmann, Yu-Chen Chen, Péter Udvarhelyi, Cristian Bonato, Jawad Ul Hassan, Robin Karhu, Ivan G. Ivanov, Nguyen Tien Son, Jeronimo R. Maze, Takeshi Ohshima, Öney O. Soykal, Ádám Gali, Sang-Yun Lee, Florian Kaiser, Jörg Wrachtrup

Nature Communications　10　(1)　2019/12/01
Publisher: Nature Publishing Group
DOI： 10.1038/s41467-019-09873-9 　

ISSN： 2041-1723
Electrically driven optical interferometry with spins in silicon carbide

Kevin C. Miao, Alexandre Bourassa, Christopher P. Anderson, Samuel J. Whiteley, Alexander L. Crook, Sam L. Bayliss, Gary Wolfowicz, Gergõ Thiering, Péter Udvarhelyi, Viktor Ivády, Hiroshi Abe, Takeshi Ohshima, Ádám Gali, David D. Awschalom

Science Advances　5　(11)　2019/11/22

DOI： 10.1126/sciadv.aay0527 　

eISSN： 2375-2548
Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions

Muhammad U. Khan, Daniel Chen, Saman Jafari, Takeshi Ohshima, Hiroshi Abe, Ziv Hameiri, Chee Mun Chong, Malcolm Abbott

Solar Energy Materials and Solar Cells　200　2019/09/15

DOI： 10.1016/j.solmat.2019.109990 　

ISSN： 0927-0248
Study on Radiation Degradation of an InGaP Solar Cell by Alpha-Particles

Imaizumi Mitsuru, Okuno Yasuki, Ohshima Takeshi

JSAP Annual Meetings Extended Abstracts　2019.2　3371-3371　2019/09/04
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2019.2.0_3371 　

eISSN： 2436-7613
Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Matthias Widmann, Matthias Niethammer, Dmitry Yu. Fedyanin, Igor A. Khramtsov, Torsten Rendler, Ian D. Booker, Jawad Ul Hassan, Naoya Morioka, Yu-Chen Chen, Ivan G. Ivanov, Nguyen Tien Son, Takeshi Ohshima, Michel Bockstedte, Adam Gali, Cristian Bonato, Sang-Yun Lee, Jörg Wrachtrup

Nano Letters　19　(10)　7173-7180　2019/09
Publisher: American Chemical Society ({ACS})
DOI： 10.1021/acs.nanolett.9b02774 　

ISSN： 1530-6984
Radiation Response of Negative Gate Biased SiC MOSFETs

Akinori Takeyama, Takahiro Makino, Shuichi Okubo, Yuki Tanaka, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima

MATERIALS　12　(17)　2019/09

DOI： 10.3390/ma12172741 　

eISSN： 1996-1944
pH Nanosensor Using Electronic Spins in Diamond. Peer-reviewed

Fujisaku T, Tanabe R, Onoda S, Kubota R, Segawa TF, So FT, Ohshima T, Hamachi I, Shirakawa M, Igarashi R

ACS nano　2019/09

DOI： 10.1021/acsnano.9b05342 　

ISSN： 1936-0851
Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties Peer-reviewed

Shin Ichiro Sato, Takuma Narahara, Yuta Abe, Yasuto Hijikata, Takahide Umeda, Takeshi Ohshima

Journal of Applied Physics　126　(8)　2019/08/28

DOI： 10.1063/1.5099327 　

ISSN： 0021-8979

eISSN： 1089-7550
Effect of coating adhesion and degradation on tin whisker mitigation of polyurethane-based conformal coatings

Fei Dong, Stephan J. Meschter, Shinji Nozaki, Takeshi Ohshima, Takahiro Makino, Junghyun Cho

Polymer Degradation and Stability　166　219-229　2019/08/01
Publisher: Elsevier Ltd
DOI： 10.1016/j.polymdegradstab.2019.05.019 　

ISSN： 0141-3910
Engineering the Interface: Nanodiamond Coating on 3D-Printed Titanium Promotes Mammalian Cell Growth and Inhibits Staphylococcus aureus Colonization

Aaqil Rifai, Nhiem Tran, Philipp Reineck, Aaron Elbourne, Edwin Mayes, Avik Sarker, Chaitali Dekiwadia, Elena P. Ivanova, Russell J. Crawford, Takeshi Ohshima, Brant C. Gibson, Andrew D. Greentree, Elena Pirogova, Kate Fox

ACS Applied Materials and Interfaces　11　(27)　24588-24597　2019/07/10
Publisher: American Chemical Society
DOI： 10.1021/acsami.9b07064 　

ISSN： 1944-8252 1944-8244
Minority carrier trap in n-type 4H–SiC schottky barrier diodes

Ivana Capan, Yuichi Yamazaki, Yuya Oki, Tomislav Brodar, Takahiro Makino, Takeshi Ohshima

Crystals　9　(7)　2019/07/01
Publisher: MDPI AG
DOI： 10.3390/cryst9070328 　

ISSN： 2073-4352
Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Kozo Takeuchi, Toshitsugu Sakamoto, Munehiro Tada, Akinori Takeyama, Takeshi Ohshima, Satoshi Kuboyama, Hiroyuki Shindo

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　66　(7)　1355-1360　2019/07

DOI： 10.1109/TNS.2019.2923013 　

ISSN： 0018-9499

eISSN： 1558-1578
Zero-Field Magnetometry Based on Nitrogen-Vacancy Ensembles in Diamond

Huijie Zheng, Jingyan Xu, Geoffrey Z. Iwata, Till Lenz, Julia Michl, Boris Yavkin, Kazuo Nakamura, Hitoshi Sumiya, Takeshi Ohshima, Junichi Isoya, Jörg Wrachtrup, Arne Wickenbrock, Dmitry Budker

Physical Review Applied　11　(6)　2019/06/27
Publisher: American Physical Society
DOI： 10.1103/PhysRevApplied.11.064068 　

ISSN： 2331-7019
Triple nitrogen-vacancy centre fabrication by C₅N₄H_n ion implantation. Peer-reviewed

Haruyama M, Onoda S, Higuchi T, Kada W, Chiba A, Hirano Y, Teraji T, Igarashi R, Kawai S, Kawarada H, Ishii Y, Fukuda R, Tanii T, Isoya J, Ohshima T, Hanaizumi O

Nature communications　10　(1)　2664　2019/06

DOI： 10.1038/s41467-019-10529-x 　

eISSN： 2041-1723
Monodisperse Five-Nanometer-Sized Detonation Nanodiamonds Enriched in Nitrogen-Vacancy Centers Peer-reviewed

Daiki Terada, Takuya F. Segawa, Alexander I. Shames, Shinobu Onoda, Takeshi Ohshima, Eiji Osawa, Ryuji Igarashi, Masahiro Shirakawa

ACS NANO　13　(6)　6461-6468　2019/06
Publisher: AMER CHEMICAL SOC
DOI： 10.1021/acsnano.8b09383 　

ISSN： 1936-0851
Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Nguyen Tien Son, Pontus Stenberg, Valdas Jokubavicius, Hiroshi Abe, Takeshi Ohshima, Jawad Ul Hassan, Ivan G. Ivanov

Applied Physics Letters　114　(21)　2019/05/27

DOI： 10.1063/1.5098070 　

ISSN： 0003-6951
Identification of divacancy and silicon vacancy qubits in 6H-SiC

Joel Davidsson, Viktor Ivády, Rickard Armiento, Takeshi Ohshima, N. T. Son, Adam Gali, Igor A. Abrikosov

Applied Physics Letters　114　(11)　2019/03/18
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.5083031 　

ISSN： 0003-6951
Increased nitrogen-vacancy centre creation yield in diamond through electron beam irradiation at high temperature

M. Capelli, A. H. Heffernan, T. Ohshima, H. Abe, J. Jeske, A. Hope, A. D. Greentree, P. Reineck, B. C. Gibson

Carbon　143　714-719　2019/03

DOI： 10.1016/j.carbon.2018.11.051 　

ISSN： 0008-6223
Development of Silicon-carbide based radiation detector for the dosimetry at carbon therapy facility

Kada Wataru, Ohki Yuya, Osaki Kohei, Yamazaki Yuichi, Makino Takahiro, Ohshima Takeshi, Matsumura Akihiko, Sakai Makoto, Hanaizumi Osamu

JSAP Annual Meetings Extended Abstracts　2019.1　512-512　2019/02/25
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2019.1.0_512 　

eISSN： 2436-7613
Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers Peer-reviewed

Kawai Sora, Yamano Hayate, Sonoda Takahiro, Kato Kanami, Buendia Jorge J, Kageura Taisuke, Fukuda Ryosuke, Okada Takuma, Tanii Takashi, Higuchi Taisei, Haruyama Moriyoshi, Yamada Keisuke, Onoda Shinobu, Ohshima Takeshi, Kada Wataru, Hanaizumi Osamu, Stacey Alastair, Teraji Tokuyuki, Kono Shozo, Isoya Junichi, Kawarada Hiroshi

JOURNAL OF PHYSICAL CHEMISTRY C　123　(6)　3594-3604　2019/02/14

DOI： 10.1021/acs.jpcc.8b11274 　

ISSN： 1932-7447

eISSN： 1932-7455
Engineering silicon carbide for enhanced borders and ports security

Ivana Capan, Tomislav Brodar, Željko Pastuović, Jose Coutinho, Vladimir Radulović, Luka Snoj, Takeshi Ohshima

NATO Science for Peace and Security Series B: Physics and Biophysics　52-62　2019
Publisher: Springer
ISSN： 1874-6535 1874-6500
Direct bonding of 4H-SIC and SOI wafers for radiation-hardened image sensors

Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki

Materials Science Forum　963　726-729　2019
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.963.726 　

ISSN： 1662-9752 0255-5476
Ligand hyperfine interactions at silicon vacancies in 4H-SiC

Nguyen Tien Son, Pontus Stenberg, Valdas Jokubavicius, Takeshi Ohshima, Jawad Ul Hassan, Ivan G. Ivanov

Journal of Physics Condensed Matter　31　(19)　2019
Publisher: Institute of Physics Publishing
DOI： 10.1088/1361-648X/ab072b 　

ISSN： 1361-648X 0953-8984
Creation of color centers in sic pn diodes using proton beam writing Peer-reviewed

Chiba, Y., Yamazaki, Y., Makino, T., Sato, S.-I., Yamada, N., Satoh, T., Kojima, K., Lee, S.-Y., Hijikata, Y., Ohshima, T.

Materials Science Forum　963 MSF　2019
Publisher: Materials Science Forum
DOI： 10.4028/www.scientific.net/MSF.963.709 　
The effect of nitrogen concentration on quantum sensing with nitrogen-vacancy centres

Marco Capelli, Hiroshi Abe, Takeshi Ohshima, Brett C. Johnson, David A. Simpson, Jan Jeske, Andrew D. Greentree, Philipp Reineck, Brant C. Gibson

Proceedings of SPIE - The International Society for Optical Engineering　11202　2019

DOI： 10.1117/12.2541225 　

ISSN： 0277-786X

eISSN： 1996-756X
Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage

Daisuke Kobayashi, Naoki Hayashi, Kazuyuki Hirose, Yuya Kakehashi, Osamu Kawasaki, Takahiro Makino, Takeshi Ohshima, Daisuke Matsuura, Yoshiharu Mori, Masaki Kusano, Takanori Narita, Shigeru Ishii, Kazunori Masukawa

IEEE Transactions on Nuclear Science　66　(1)　155-162　2019/01
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI： 10.1109/tns.2018.2882221 　

ISSN： 0018-9499

eISSN： 1558-1578
First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure

Yu-ichiro Matsushita, Yoritaka Furukawa, Yasuto Hijikata, Takeshi Ohshima

APPLIED SURFACE SCIENCE　464　451-454　2019/01

DOI： 10.1016/j.apsusc.2018.09.072 　

ISSN： 0169-4332

eISSN： 1873-5584
Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride Peer-reviewed

Shin Ichiro Sato, Manato Deki, Tohru Nakamura, Tomoaki Nishimura, Daniel Stavrevski, Andrew D. Greentree, Brant C. Gibson, Takeshi Ohshima

Japanese Journal of Applied Physics　58　(5)　2019

DOI： 10.7567/1347-4065/ab142b 　

ISSN： 0021-4922

eISSN： 1347-4065
Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

Ivana Capan, Tomislav Brodar, José Coutinho, Takeshi Ohshima, Vladimir P. Markevich, Anthony R. Peaker

Journal of Applied Physics　124　(24)　2018/12/28
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.5063773 　

ISSN： 1089-7550 0021-8979
Recovery from radiation-induced degradation in InGaP solar cells by light soaking

Yuichi Shibata, Mitsuru Imaizumi, Shin-Ichiro Sato, Takeshi Ohshima, Masafumi Akiyoshi, Shuichi Okuda

Applied Physics Express　11　(12)　2018/12/01
Publisher: Institute of Physics Publishing
DOI： 10.7567/APEX.11.122301 　

ISSN： 1882-0786 1882-0778
Extending coherence time of macro-scale diamond magnetometer by dynamical decoupling with coplanar waveguide resonator Peer-reviewed

Y. Masuyama, K. Mizuno, H. Ozawa, H. Ishiwata, Y. Hatano, T. Ohshima, T. Iwasaki, M. Hatano

Review of Scientific Instruments　89　(12)　125007-125007　2018/12
Publisher: {AIP} Publishing
DOI： 10.1063/1.5047078 　

ISSN： 1089-7623

eISSN： 1089-7623
Fabrication of two-dimensional arrays of fluorescent centers in single-crystalline diamond using particle beam writing Peer-reviewed

M. Haruyama, Y. Suda, W. Kada, S. Onoda, T. Ohshima, K. Miura, O. Hanaizumi

key Engineering Materials　790　2018/12
Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC Peer-reviewed

Tomislav Brodar, Ivana Capan, Vladimir Radulovi{\'{c, Luka Snoj, v{Z } }eljko Pastuovi{\'{c, Jos{\'{e, Coutinho, Takeshi Ohshima

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms　437　27　2018/12
Publisher: Elsevier {BV}
DOI： 10.1016/j.nimb.2018.10.030 　
Magnetically sensitive nanodiamond-doped tellurite glass fibers Peer-reviewed

Yinlan Ruan, David A. Simpson, Jan Jeske, Heike Ebendorff-Heidepriem, Desmond W. M. Lau, Hong Ji, Brett C. Johnson, Takeshi Ohshima, Shahraam V. Afshar, Lloyd Hollenberg, Andrew D. Greentree, Tanya M. Monro, Brant C. Gibson

Scientific Reports　8　(1)　2018/12/01
Publisher: Nature Publishing Group
DOI： 10.1038/s41598-018-19400-3 　

ISSN： 2045-2322
Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals Peer-reviewed

Yasuto Hijikata, Takashi Horii, Yoritaka Furukawa, Yu-ichiro Matsushita, Takeshi Ohshima

Journal of Physics Communications　2　(11)　2018/11

DOI： 10.1088/2399-6528/aaede4 　

ISSN： 2399-6528
Characterization of stability of benchmark organic photovoltaic films after proton and electron bombardments Peer-reviewed

Jérémy Barbé, Harrison K.H. Lee, Hiroyuki Toyota, Kazuyuki Hirose, Shin Ichiro Sato, Takeshi Ohshima, Keith C. Heasman, Wing C. Tsoi

Applied Physics Letters　113　(18)　2018/10/29

DOI： 10.1063/1.5046829 　

ISSN： 0003-6951
NV^- - N⁺ pair centre in 1b diamond Peer-reviewed

Neil B. Manson, Morgan Hedges, Michael S. J. Barson, Rose Ahlefeldt, Marcus W. Doherty, Hiroshi Abe, Takeshi Ohshima, Matthew J. Sellars

New Journal of Physics　20　2018/10

DOI： 10.1088/1367-2630/aaec58 　

ISSN： 1367-2630
Optimization of Temperature Sensitivity Using the Optically Detected Magnetic-Resonance Spectrum of a Nitrogen-Vacancy Center Ensemble Peer-reviewed

Hayashi Kan, Matsuzaki Yuichiro, Taniguchi Takashi, Shimo-Oka Takaaki, Nakamura Ippei, Onoda Shinobu, Ohshima Takeshi, Morishita Hiroki, Fujiwara Masanori, Saito Shiro, Mizuochi Norikazu

PHYSICAL REVIEW APPLIED　10　(3)　2018/09/06

DOI： 10.1103/PhysRevApplied.10.034009 　

ISSN： 2331-7019
Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface Peer-reviewed

Shin Ichiro Sato, Tomoya Honda, Takahiro Makino, Yasuto Hijikata, Sang Yun Lee, Takeshi Ohshima

ACS Photonics　5　(8)　3159-3165　2018/08/15
Publisher: American Chemical Society ({ACS})
DOI： 10.1021/acsphotonics.8b00375 　

eISSN： 2330-4022
Flight demonstration of inverted metamorphic triple-junction solar cells in space Peer-reviewed

Sumita Taishi, Shibata Yuichi, Nakamura Tetsuya, Shimazaki Kazunori, Kukita Akio, Imaizumi Mitsuru, Sato Shin-ichiro, Ohshima Takeshi, Takamoto Tatsuya

JAPANESE JOURNAL OF APPLIED PHYSICS　57　(8)　2018/08

DOI： 10.7567/JJAP.57.08RD01 　

ISSN： 0021-4922
Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing Peer-reviewed

Ryosuke Fukuda, Priyadharshini Balasubramanian, Itaru Higashimata, Godai Koike, Takuma Okada, Risa Kagami, Tokuyuki Teraji, Shinobu Onoda, Moriyoshi Haruyama, Keisuke Yamada, Masafumi Inaba, Hayate Yamano, Felix M. Stürner, Simon Schmitt, Liam, P. McGuinness, Fedor Jelezko, Takeshi Ohshima, Takahiro Shinada, Hiroshi Kawarada, Wataru Kada, ers

JournalNew Journal of Physics　20　(8)　083029/1-083029/9　2018/08

DOI： 10.1088/1367-2630/aad997 　

ISSN： 1367-2630
Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications Peer-reviewed

E. Mizuta, S. Kuboyama, Y. Nakada, A. Takeyama, T. Ohshima, Y. Iwata, K. Suzuki

IEEE Transactions on Nuclear Science　65　(8)　1956　2018/08
Publisher: Institute of Electrical and Electronics Engineers ({IEEE})
DOI： 10.1109/TNS.2018.2819990 　
Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications Peer-reviewed

Takeshi Ohshima, Takahiro Satoh, Hannes Kraus, Georgy V Astakhov, Vladimir V Dyakonov, Pavel G. Baranov

Journal of Physics D: Applied Physics　2018/08
Publisher: {IOP} Publishing
DOI： 10.1088/1361-6463/aad0ec 　
Publisher's Note: “Loop-gap microwave resonator for hybrid quantum systems” [Appl. Phys. Lett. 112, 204102 (2018)] Peer-reviewed

Applied Physics Letters　2018/07

DOI： 10.1063/1.5048381 　
Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride Peer-reviewed

Hanh Ngoc My Duong, Minh Anh, Phan Nguyen, Mehran Kianinia, Takeshi Ohshima, Hiroshi Abe, Kenji Watanabe, Takashi Taniguchi, James H. Edgar, Igor Aharonovich, Milos Toth

ACS Applied Materials & Interfaces　10　(29)　24886-24891　2018/07
Publisher: American Chemical Society ({ACS})
DOI： 10.1021/acsami.8b07506 　

ISSN： 1944-8244

eISSN： 1944-8252
Bright single photon sources in lateral silicon carbide light emitting diodes Peer-reviewed

Matthias Widmann, Matthias Niethammer, Takahiro Makino, Torsten Rendler, Stefan Lasse, Takeshi Ohshima, Jawad Ul Hassan, Nguyen Tien Son, Sang-Yun Lee, Jörg Wrachtrup

Applied Physics Letters　112　(23)　2018/06/04
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.5032291 　

ISSN： 0003-6951
Various single photon sources observed in SiC pin diodes Peer-reviewed

H. Tsunemi, H. Tsunemi, T. Honda, T. Honda, T. Makino, S. Onoda, S. I. Sato, Y. Hijikata, T. Ohshima

Materials Science Forum　924　204-207　2018/06

DOI： 10.4028/www.scientific.net/MSF.924.204 　

ISSN： 0255-5476
Tolerance of Perovskite Solar Cell to High-Energy Particle Irradiations in Space Environment (vol 2, pg 148, 2018) Peer-reviewed

Miyazawa Yu, Ikegami Masashi, Chen Hsin-Wei, Ohshima Takeshi, Imaizumi Mitsuru, Hirose Kazuyuki, Miyasaka Tsutomu

ISCIENCE　3　86　2018/05/25

DOI： 10.1016/j.isci.2018.04.023 　

ISSN： 2589-0042
Loop-gap microwave resonator for hybrid quantum systems Peer-reviewed

Jason R. Ball, Yu Yamashiro, Hitoshi Sumiya, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Denis Konstantinov, Yuimaru Kubo

Applied Physics Letters　112　(20)　204102　2018/05/14
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.5025744 　

ISSN： 0003-6951
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study Peer-reviewed

Ivana Capan, Tomislav Brodar, Zeljko Pastuović, Rainer Siegele, Takeshi Ohshima, Shin-Ichiro Sato, Takahiro Makino, Luka Snoj, Vladimir Radulović, José Coutinho, Vitor J. B. Torres, Kamel Demmouche

Journal of Applied Physics　123　(16)　2018/04/28
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.5011124 　

ISSN： 1089-7550 0021-8979
Tolerance of Perovskite Solar Cell to High-Energy Particle Irradiations in Space Environment Peer-reviewed

Miyazawa Yu, Ikegami Masashi, Chen Hsin-Wei, Ohshima Takeshi, Imaizumi Mitsuru, Hirose Kazuyuki, Miyasaka Tsutomu

ISCIENCE　2　148-+　2018/04/27

DOI： 10.1016/j.isci.2018.03.020 　

ISSN： 2589-0042
Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds Peer-reviewed

Robert G. Ryan, Alastair Stacey, Kane M. O'Donnell, Takeshi Ohshima, Brett C. Johnson, Lloyd C. L. Hollenberg, Paul Mulvaney, David A. Simpson

ACS Applied Materials and Interfaces　10　(15)　13143-13149　2018/04/18
Publisher: American Chemical Society
DOI： 10.1021/acsami.7b19238 　

ISSN： 1944-8252 1944-8244
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide Peer-reviewed

Roland Nagy, Matthias Widmann, Matthias Niethammer, Durga B. R. Dasari, Ilja Gerhardt, Öney O. Soykal, Marina Radulaski, Takeshi Ohshima, Jelena Vučković, Nguyen Tien Son, Ivan G. Ivanov, Sophia E. Economou, Cristian Bonato, Sang-Yun Lee, Jörg Wrachtrup

Physical Review Applied　9　(3)　2018/03/23
Publisher: American Physical Society
DOI： 10.1103/PhysRevApplied.9.034022 　

ISSN： 2331-7019
Analysis of radiation resistance in GaN HEMT

Takayuki Hisaka, Hajime Sasaki, Shinobu Onoda, Takeshi Ohshima

Mitsubishi Electric Advance　161　17-19　2018/03/01
Publisher: Mitsubishi Electric Corp.
ISSN： 1345-3041
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. Peer-reviewed

Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda

Microelectronics Reliability　81　312-319　2018/02

DOI： 10.1016/j.microrel.2017.10.005 　

ISSN： 0026-2714
Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors Peer-reviewed

Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima

Applied Physics Letters　112　(3)　031105　2018/01/15
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.4994241 　

ISSN： 0003-6951
Radiation hardness of beta-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation Peer-reviewed

Wong Man Hoi, Takeyama Akinori, Makino Takahiro, Ohshima Takeshi, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka

APPLIED PHYSICS LETTERS　112　(2)　2018/01/08

DOI： 10.1063/1.5017810 　

ISSN： 0003-6951

eISSN： 1077-3118
Recent Advances in Ga2O3 MOSFET Technologies

Masataka Higashiwaki, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, Ravikiran Lingaparthi, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Shinya Watanabe, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai

2018 76TH DEVICE RESEARCH CONFERENCE (DRC)　2018

ISSN： 1548-3770
Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics Peer-reviewed

T. Kurose, S. I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Östling, C. M. Zetterling

Materials Science Forum　924　971-974　2018
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.924.971 　

ISSN： 0255-5476
Ab initio theory of Si-vacancy quantum Bits in 4H and 6H-SiC Peer-reviewed

Viktor Ivády, Joel Davidsson, Nguyen Tien Son, Takeshi Ohshima, Igor A. Abrikosov, Adam Gali

Materials Science Forum　924　895-900　2018
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.924.895 　

ISSN： 0255-5476
4H-SiC pMOSFETs with al-doped S/D and NbNi silicide ohmic contacts Peer-reviewed

J. Kajihara, S. I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Östling, C. M. Zetterling

Materials Science Forum　924　423-427　2018
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.924.423 　

ISSN： 0255-5476
Latest progress in gallium-oxide electronic devices Peer-reviewed

Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Yoshiaki Nakata, Chia-Hung Lin, Takafumi Kamimura, Lingaparthi Ravikiran, Kohei Sasaki, Ken Goto, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai

Proceedings of SPIE - The International Society for Optical Engineering　10533　2018
Publisher: SPIE
DOI： 10.1117/12.2292666 　

ISSN： 1996-756X 0277-786X
Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets Peer-reviewed

Daisuke Kobayashi, Kazuyuki Hirose, Taichi Ito, Yuya Kakehashi, Osamu Kawasaki, Takahiro Makino, Takeshi Ohshima, Daisuke Matsuura, Takanori Narita, Masahiro Kato, Shigeru Ishii, Kazunori Masukawa

IEEE Transactions on Nuclear Science　65　(1)　523-532　2018/01/01
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/TNS.2017.2774805 　

ISSN： 0018-9499
Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties Peer-reviewed

Lee Kin Kiong, Wang Danna, Shinobu Onoda, Ohshima Takeshi

Radiation Effects and Defects in Solids　173　(3-4)　250-260　2018/01

DOI： 10.1080/10420150.2018.1427093 　

ISSN： 1042-0150
Oxidation-process dependence of single photon sources embedded in 4H-SiC MOSFEts

Yuta Abe, Takahide Umeda, Mitsuo Okamoto, Shinobu Onoda, Moriyoshi Haruyama, Moriyoshi Haruyama, Wataru Kada, Osamu Hanaizumi, Ryoji Kosugi, Shinsuke Harada, Takeshi Ohshima

Materials Science Forum　924 MSF　281-284　2018/01/01

DOI： 10.4028/www.scientific.net/MSF.924.281 　

ISSN： 0255-5476

More details Close

c 2018 Trans Tech Publications, Switzerland. We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSs only in 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.
Evaluation of subcell power conversion efficiencies of radiation-damaged triple-junction solar cells using photoluminescence decays Peer-reviewed

David M. Tex, Toshiyuki Ihara, Tetsuya Nakamura, Mitsuru Imaizumi, Takeshi Ohshima, Yoshihiko Kanemitsu

PROGRESS IN PHOTOVOLTAICS　25　(12)　1005-1014　2017/12

DOI： 10.1002/pip.2912 　

ISSN： 1062-7995

eISSN： 1099-159X
Stark tuning and electrical charge state control of single divacancies in silicon carbide Peer-reviewed

Charles F. de las Casas, David J. Christle, Jawad Ul Hassan, Takeshi Ohshima, Nguyen T. Son, David D. Awschalom

APPLIED PHYSICS LETTERS　111　(26)　2017/12

DOI： 10.1063/1.5004174 　

ISSN： 0003-6951

eISSN： 1077-3118
Diffusion of Vacancies Created by High-Energy Heavy Ion Strike Into Diamond Peer-reviewed

Shinobu Onoda, Kazumasa Tatsumi, Moriyoshi Haruyama, Tokuyuki Teraji, Junichi Isoya, Wataru Kada, Takeshi Ohshima, Osamu Hanaizumi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　214　(11)　2017/11

DOI： 10.1002/pssa.201700160 　

ISSN： 1862-6300

eISSN： 1862-6319
Scalable quantum photonics with single color centers in silicon carbide Peer-reviewed

Marina Radulaski, Matthias Widmann, Matthias Niethammer, Jingyuan Linda Zhang, Sang-Yun Lee, Torsten Rendler, Konstantinos G. Lagoudakis, Nguyen Tien Son, Erik Janzen, Takeshi Ohshima, Jörg Wrachtrup, Jelena Vučković

2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings　2017-　1-2　2017/10/25
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1364/CLEO_QELS.2017.JM3E.4 　
Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide Peer-reviewed

Viktor Ivady, Joel Davidsson, Nguyen Tien Son, Takeshi Ohshima, Igor A. Abrikosov, Adam Gali

PHYSICAL REVIEW B　96　(16)　2017/10

DOI： 10.1103/PhysRevB.96.161114 　

ISSN： 2469-9950

eISSN： 2469-9969
Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity Peer-reviewed

Takuro Tomita, Manato Deki, Eizo Yanagita, Yota Bando, Yoshiki Naoi, Takahiro Makino, Takeshi Ohshima

JOURNAL OF LASER MICRO NANOENGINEERING　12　(2)　72-75　2017/09

DOI： 10.2961/jlmn.2017.02.0004 　

ISSN： 1880-0688
Radiation hardness of Ga2O3 MOSFETs against gamma-ray irradiation Peer-reviewed

Man Hoi Wong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki

Device Research Conference - Conference Digest, DRC　2017/08/01
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/DRC.2017.7999400 　

ISSN： 1548-3770
Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation

Daisuke Kobayashi, Kazuyuki Hirose, Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Shoji Ikeda, Hideo Sato, Eli Christopher Inocencio Enobio, Tetsuo Endoh, Hideo Ohno

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(8)　2017/08

DOI： 10.7567/JJAP.56.0802B4 　

ISSN： 0021-4922

eISSN： 1347-4065
Effects of SiH Groups on ELDRS Quantified by XPS with Combined Use of Gamma-ray and Electron-beam Irradiation

Shintaro Toguchi, Daisuke Kobayashi, Takahiro Makino, Takeshi Ohshima, Kazuyuki Hirose

2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017　2017/07/02
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/RADECS.2017.8696199 　
Electron beam irradiation effect on the mechanical properties of nanosilica-filled polyurethane films Peer-reviewed

Fei Dong, Suraj Maganty, Stephan J. Meschter, Shinji Nozaki, Takeshi Ohshima, Takahiro Makino, Junghyun Cho

POLYMER DEGRADATION AND STABILITY　141　45-53　2017/07

DOI： 10.1016/j.polymdegradstab.2017.05.003 　

ISSN： 0141-3910

eISSN： 1873-2321
Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface Peer-reviewed

David J. Christle, Paul V. Klimov, Charles F. de las Casas, Krisztian Szasz, Viktor Ivady, Valdas Jokubavicius, Jawad Ul Hassan, Mikael Syvajarvi, William F. Koehl, Takeshi Ohshima, Nguyen T. Son, Erik Janzen, Adam Gali, David D. Awschalom

PHYSICAL REVIEW X　7　(2)　2017/06

DOI： 10.1103/PhysRevX.7.021046 　

ISSN： 2160-3308
Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide Peer-reviewed

H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov

Nano Letters　17　(5)　2865-2870　2017/05/10
Publisher: American Chemical Society
DOI： 10.1021/acs.nanolett.6b05395 　

ISSN： 1530-6992 1530-6984
Creation and functionalization of defects in SiC by proton beam writing Peer-reviewed

T. Ohshima, T. Honda, T. Honda, S. Onoda, T. Makino, M. Haruyama, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, H. Kraus, V. Dyakonov, G. V. Astakhov

Materials Science Forum　897　233-237　2017/05

DOI： 10.4028/www.scientific.net/MSF.897.233 　

ISSN： 0255-5476
Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays Peer-reviewed

David M. Tex, Tetsuya Nakamura, Mitsuru Imaizumi, Takeshi Ohshima, Yoshihiko Kanemitsu

SCIENTIFIC REPORTS　7　1985-1985/8　2017/05

DOI： 10.1038/s41598-017-02141-0 　

ISSN： 2045-2322
Optimum structures for gamma-ray radiation resistant SiC-MOSFETs Peer-reviewed

Satoshi Mitomo, Takuma Matsuda, Koichi Murata, Takashi Yokoseki, Takahiro Makino, Akinori Takeyama, Shinobu Onoda, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　214　(4)　2017/04

DOI： 10.1002/pssa.201600425 　

ISSN： 1862-6300

eISSN： 1862-6319
Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs Peer-reviewed

Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Yokoseki, Takahiro Makino, Shinobu Onoda, Akinori Takeyama, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　214　(4)　2017/04

DOI： 10.1002/pssa.201600446 　

ISSN： 1862-6300

eISSN： 1862-6319
Scalable Quantum Photonics with Single Color Centers in Silicon Carbide Peer-reviewed

Marina Radulaski, Matthias Widmann, Matthias Niethammer, Jingyuan Linda Zhang, Sang-Yun Lee, Torsten Rendler, Konstantinos G. Lagoudakis, Nguyen Tien Son, Erik Janzen, Takeshi Ohshima, Joerg Wrachtrup, Jelena Vuckovic

NANO LETTERS　17　(3)　1782-1786　2017/03

DOI： 10.1021/acs.nanolett.6b05102 　

ISSN： 1530-6984

eISSN： 1530-6992
Nanomechanical Sensing Using Spins in Diamond Peer-reviewed

Michael S. J. Barson, Phani Peddibhotla, Preeti Ovartchaiyapong, Kumaravelu Ganesan, Richard L. Taylor, Matthew Gebert, Zoe Mielens, Berndt Koslowski, David A. Simpson, Liam P. McGuinness, Jeffrey McCallum, Steven Prawer, Shinobu Onoda, Takeshi Ohshima, Ania C. Bleszynski Jayich, Fedor Jelezko, Neil B. Manson, Marcus W. Doherty

NANO LETTERS　17　(3)　1496-1503　2017/03

DOI： 10.1021/acs.nanolett.6b04544 　

ISSN： 1530-6984

eISSN： 1530-6992
Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons Peer-reviewed

Mitsuru Imaizumi, Tetsuya Nakamura, Tatsuya Takamoto, Takeshi Ohshima, Michio Tajima

PROGRESS IN PHOTOVOLTAICS　25　(2)　161-174　2017/02

DOI： 10.1002/pip.2840 　

ISSN： 1062-7995

eISSN： 1099-159X
High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits Peer-reviewed

Sethu Saveda Suvanam, Shin-Ichiro Kuroki, Luigia Lanni, Raheleh Hadayati, Takeshi Ohshima, Takahiro Makino, Anders Hallen, Carl-Mikael Zetterling

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　64　(2)　852-858　2017/02

DOI： 10.1109/TNS.2016.2642899 　

ISSN： 0018-9499

eISSN： 1558-1578
Interface defects in C-face 4H-SiC MOSFETs: An electrically-detected-magnetic-resonance study

T. Umeda, M. Okamoto, H. Yoshioka, G. W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada

ECS Transactions　80　(1)　147-153　2017
Publisher: Electrochemical Society Inc.
DOI： 10.1149/08001.0147ecst 　

ISSN： 1938-5862 1938-6737
Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy

Shin-ichiro Sato, Takeyoshi Sugaya, Tetsuya Nakamura, Takeshi Ohshima

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　562-566　2017

ISSN： 0160-8371
Theoretical and experimental investigation of point defects in cubic boron nitride Peer-reviewed

Nicholas L. McDougall, Jim G. Partridge, Desmond W. M. Lau, Philipp Reineck, Brant C. Gibson, Takeshi Ohshima, Dougal G. McCulloch

MRS Advances　2　(29)　1545-1550　2017
Publisher: Materials Research Society
DOI： 10.1557/adv.2017.53 　

ISSN： 2059-8521
4H-SiC pseudo-CMOS logic inverters for harsh environment electronics Peer-reviewed

S. I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Östling, C. M. Zetterling

Materials Science Forum　897　669-672　2017
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.897.669 　

ISSN： 0255-5476
QUALIFICATION TEST RESULTS OF IMM TRIPLE-JUNCTION SOLAR CELLS, SPACE SOLAR SHEETS, AND LIGHTWEIGHT&COMPACT SOLAR PADDLE Peer-reviewed

Mitsuru Imaizumi, Tatsuya Takamoto, Naoyuki Kaneko, Yukishige Nozaki, Takeshi Ohshima

11TH EUROPEAN SPACE POWER CONFERENCE　16　2017

DOI： 10.1051/e3sconf/20171603012 　

ISSN： 2267-1242
Abnormal Increase in Soft-error Sensitivity of Back-biased Thin-BOX SOI SRAMs Peer-reviewed

Daisuke Kobayashi, Kazuyuki Hirose, Taichi Ito, Yuya Kakehashi, Osamu Kawasaki, Takahiro Makino, Takeshi Ohshima, Daisuke Matsuura, Takanori Narita, Masahiro Kato, Kazunori Masukawa

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)　2017

ISSN： 1541-7026
Stimulated emission from nitrogen-vacancy centres in diamond Peer-reviewed

Jan Jeske, Desmond W. M. Lau, Xavier Vidal, Liam P. McGuinness, Philipp Reineck, Brett C. Johnson, Marcus W. Doherty, Jeffrey C. McCallum, Shinobu Onoda, Fedor Jelezko, Takeshi Ohshima, Thomas Volz, Jared H. Cole, Brant C. Gibson, Andrew D. Greentree

Nature Communications　8　14000　2017/01

DOI： 10.1038/ncomms14000 　

ISSN： 2041-1723
Nanodiamond-polycaprolactone composite: A new material for tissue engineering with sub-dermal imaging capabilities Peer-reviewed

Kate Fox, Phong A. Tran, Desmond W.M. Lau, Takeshi Ohshima, Andrew D. Greentree, Brant C. Gibson

Materials Letters　185　185-188　2016/12/15
Publisher: Elsevier
DOI： 10.1016/j.matlet.2016.08.140 　

ISSN： 1873-4979 0167-577X
Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers Peer-reviewed

T. Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata

Superlattices and Microstructures　99　197-201　2016/11

DOI： 10.1016/j.spmi.2016.03.005 　

ISSN： 0749-6036
Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions Peer-reviewed

Takeyama Akinori, Matsuda Takuma, Yokoseki Takashi, Mitomo Satoshi, Murata Koichi, Makino Takahiro, Onoda Shinobu, Okubo Shuichi, Tanaka Yuki, Kandori Mikio, Yoshie Toru, Hijikata Yasuto, Ohshima Takeshi

Japanese Journal of Applied Physics　55　(10)　104101-104101　2016/10

DOI： 10.7567/JJAP.55.104101 　

ISSN： 0021-4922
Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions Peer-reviewed

Matthias Niethammer, Matthias Widmann, Sang-Yun Lee, Pontus Stenberg, Olof Kordina, Takeshi Ohshima, Nguyen Tien Son, Erik Janzen, Joerg Wrachtrup

PHYSICAL REVIEW APPLIED　6　(3)　2016/09

DOI： 10.1103/PhysRevApplied.6.034001 　

ISSN： 2331-7019
Towards a spin-ensemble quantum memory for superconducting qubits Peer-reviewed

Grezes Cecile, Kubo Yuimaru, Julsgaard Brian, Umeda Takahide, Isoya Junichi, Sumiya Hitoshi, Abe Hiroshi, Onoda Shinobu, Ohshima Takeshi, Nakamura Kazuo, Diniz Igor, Auffeves Alexia, Jacques Vincent, Roch Jean-Francois, Vion Denis, Esteve Daniel, Moelmer Klaus, Bertet Patrice

Comptes Rendus Physique　17　(7)　693-704　2016/08

DOI： 10.1016/j.crhy.2016.07.006 　

ISSN： 1631-0705
Charge multiplication effect in thin diamond films Peer-reviewed

N. Skukan, V. Grilj, I. Sudić, M. Pomorski, W. Kada, T. Makino, Y. Kambayashi, Y. Andoh, S. Onoda, S. Sato, T. Ohshima, T. Kamiya, M. Jakšić

Applied Physics Letters　109　(4)　043502　2016/07

DOI： 10.1063/1.4959863 　

ISSN： 0003-6951
Change in characteristics of SiC MOSFETs by gamma-ray irradiation at high temperature Peer-reviewed

Takuma Matsuda, Takuma Matsuda, Takashi Yokoseki, Takashi Yokoseki, Satoshi Mitomo, Satoshi Mitomo, Koichi Murata, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima

Materials Science Forum　858　860-863　2016/05

DOI： 10.4028/www.scientific.net/MSF.858.860 　

ISSN： 0255-5476
Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H-SiC Schottky barrier diodes Peer-reviewed

Takahiro Makino, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Takeshi Ohshima

Materials Science Forum　858　753-756　2016/05

DOI： 10.4028/www.scientific.net/MSF.858.753 　

ISSN： 0255-5476
InGaP/GaAs heterojunction photosensor powered by an on-chip GaAs solar cell for energy harvesting Peer-reviewed

Phuc Hong Than, Kazuo Uchida, Takahiro Makino, Takeshi Ohshima, Shinji Nozaki

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(4)　2016/04

DOI： 10.7567/JJAP.55.04ES09 　

ISSN： 0021-4922

eISSN： 1347-4065
The evaluation of radiation damage parameter for CVD diamond

V. Grilj, N. Skukan, M. Jaksic, M. Pomorski, W. Kada, T. Kamiya, T. Ohshima

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　372　161-164　2016/04

DOI： 10.1016/j.nimb.2015.12.046 　

ISSN： 0168-583X

eISSN： 1872-9584
Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

W. Kada, Y. Kambayashi, Y. Kambayashi, Y. Ando, Y. Ando, S. Onoda, H. Umezawa, Y. Mokuno, S. Shikata, T. Makino, M. Koka, O. Hanaizumi, T. Kamiya, T. Ohshima

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　372　151-155　2016/04/01

DOI： 10.1016/j.nimb.2015.12.044 　

ISSN： 0168-583X

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c 2016 Elsevier B.V. All rights reserved. To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.
Electronic properties of defects in high-fluence electron-irradiated bulk GaN Peer-reviewed

Tran Thien Duc, Galia Pozina, Nguyen Tien Son, Takeshi Ohshima, Erik Janzen, Carl Hemmingsson

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS　253　(3)　521-526　2016/03

DOI： 10.1002/pssb.201552521 　

ISSN： 0370-1972

eISSN： 1521-3951
Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy Peer-reviewed

Tran Thien Duc, Galia Pozina, Nguyen Tien Son, Olof Kordina, Erik Janzen, Takeshi Ohshima, Carl Hemmingsson

JOURNAL OF APPLIED PHYSICS　119　(9)　2016/03

DOI： 10.1063/1.4943029 　

ISSN： 0021-8979

eISSN： 1089-7550
Engineering single defects in silicon carbide bulk, nanostructures and devices Peer-reviewed

A. Lohrmann, B. C. Johnson, A. F.M. Almutairi, D. W.M. Lau, M. Negri, M. Bosi, B. C. Gibson, J. C. McCallum, A. Gali, T. Ohshima, S. Castelletto

Materials Science Forum　858　312-317　2016
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.858.312 　

ISSN： 0255-5476
Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation Peer-reviewed

S. I. Kuroki, H. Nagatsuma, M. de Silva, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Östling, C. M. Zetterling

Materials Science Forum　858　864-867　2016
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.858.864 　

ISSN： 0255-5476
Relationship between C-face defects and threshold-voltage instability in C-face 4H-SiC MOSFETs studied by electrically detected magnetic resonance Peer-reviewed

G. W. Kim, R. Arai, S. J. Ma, M. Okamoto, H. Yoshioka, S. Harada, T. Makino, T. Ohshima, T. Umeda

Materials Science Forum　858　591-594　2016
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.858.591 　

ISSN： 0255-5476
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation Peer-reviewed

A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, B. C. Johnson

APPLIED PHYSICS LETTERS　108　(2)　2016/01

DOI： 10.1063/1.4939906 　

ISSN： 0003-6951

eISSN： 1077-3118
Analysis on Degradation Characteristics of Component Subcells in IMM Triple-Junction Solar Cells Peer-reviewed

Mitsuru Imaizumi, Tatsuya Takamoto, Takeshi Ohshima

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)　3396-3400　2016

ISSN： 0160-8371
Thermal stability of deep-level defects in high-purity semi-insulating 4H-SiC substrate studied by admittance spectroscopy

Naoya Iwamoto, Alexander Azarov, Takeshi Ohshima, Anne Marie M Moe, Bengt G. Svensson

Materials Science Forum　858　357-360　2016/01/01

DOI： 10.4028/www.scientific.net/MSF.858.357 　

ISSN： 0255-5476
Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region Peer-reviewed

Ohshima Takeshi, Yokoseki Takashi, Murata Koichi, Matsuda Takuma, Mitomo Satoshi, Abe Hiroshi, Makino Takahiro, Onoda Shinobu, Hijikata Yasuto, Tanaka Yuki, Kandori Mikio, Okubo Shuichi, Yoshie Toru

Japanese Journal of Applied Physics　55　(1)　01AD01　2016/01

DOI： 10.7567/JJAP.55.01AD01 　

ISSN： 0021-4922
Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs

Y. Kobayashi, T. Yokozeki, T. Yokozeki, T. Matsuda, T. Matsuda, S. Mitomo, S. Mitomo, K. Murata, K. Murata, M. Hachisuka, Y. Kaneko, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata

Materials Science Forum　858　868-871　2016/01/01

DOI： 10.4028/www.scientific.net/MSF.858.868 　

ISSN： 0255-5476
Development of Single-Crystal CVD Diamond Detector with Embedded Living-Cell Cultivation Environment

Wataru Kada, Makoto Sakai, Michal Pomorski, Natko Skukan, Takahiro Makino, Milko Jak?i?, Shinobu Onoda, Takeshi Ohshima, Tomihiro Kamiya, Osamu Hanaizumi

GUMI AND AMDE 2016　57　2016
Spectral response, carrier lifetime, and photocurrents of SiC photocathodes Peer-reviewed

M. Kato, K. Miyake, T. Yasuda, M. Ichimura, T. Hatayama, T. Ohshima

Jpn. J. Appl. Phys.　55　(1)　01AC02　2016/01
Publisher: Institute of Physics
DOI： 10.7567/JJAP.55.01AC02 　

ISSN： 0021-4922

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Silicon carbide (SiC) photocathode is one of the candidates for energy conversion from the solar light to hydrogen gas. The conversion efficiencies using SiC photocathodes are still low for practical use. In this study, to find origins of low conversion efficiency, we evaluated carrier lifetimes and depletion layer widths in SiC photocathodes and examined relationship of them with photocurrents. In addition, we observed spectral response of the photocurrents from the photocathodes. From these results, we found that enhancement of the carrier lifetime and the depletion layer width is effective for increase of the conversion efficiency for 4H- and 6H-SiC. 3C-SiC would have defects reducing the effective carrier lifetime, and thus decrease of such defects is essential for increase of the conversion efficiency using 3C-SiC.
Evaluation of radiation tolerance of perovskite solar cell for use in space Peer-reviewed

Yu Miyazawa, Masashi Ikegami, Tsutomu Miyasaka, Takeshi Ohshima, Mitsuru Imaizumi, Kazuyuki Hirose

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015　2015/12/14
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/PVSC.2015.7355859 　
Surface modifications of hydrogen storage alloy by heavy ion beams with keV to MeV irradiation energies Peer-reviewed

Hiroshi Abe, Shinnosuke Tokuhira, Hirohisa Uchida, Takeshi Ohshima

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　365　214-217　2015/12

DOI： 10.1016/j.nimb.2015.07.085 　

ISSN： 0168-583X

eISSN： 1872-9584
Investigation of the silicon vacancy color center for quantum key distribution Peer-reviewed

Yan Liu, Petr Siyushev, Youying Rong, Botao Wu, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Heping Zeng, E. Wu

OPTICS EXPRESS　23　(26)　32961-32967　2015/12

DOI： 10.1364/OE.23.032961 　

ISSN： 1094-4087
Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation Peer-reviewed

Teraji Tokuyuki, Yamamoto Takashi, Watanabe Kenji, Koide Yasuo, Isoya Junichi, Onoda Shinobu, Ohshima Takeshi, Rogers Lachlan J, Jelezko Fedor, Neumann Philipp, Wrachtrup Joerg, Koizumi Satoshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　212　(11)　2365-2384　2015/11

DOI： 10.1002/pssa.201532449 　

ISSN： 1862-6300

eISSN： 1862-6319
Subpicotesla Diamond Magnetometry Peer-reviewed

Thomas Wolf, Philipp Neumann, Kazuo Nakamura, Hitoshi Sumiya, Takeshi Ohshima, Junichi Isoya, Joerg Wrachtrup

PHYSICAL REVIEW X　5　(4)　041001　2015/10

DOI： 10.1103/PhysRevX.5.041001 　

ISSN： 2160-3308
Storage and retrieval of microwave fields at the single-photon level in a spin ensemble Peer-reviewed

C. Grezes, B. Julsgaard, Y. Kubo, W. L. Ma, W. L. Ma, M. Stern, A. Bienfait, K. Nakamura, J. Isoya, S. Onoda, T. Ohshima, V. Jacques, D. Vion, D. Esteve, R. B. Liu, K. Mølmer, P. Bertet

Physical Review A　92　20301(R)　2015/08

DOI： 10.1103/PhysRevA.92.020301 　

ISSN： 1050-2947
Single-photon emitting diode in silicon carbide Peer-reviewed

A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum, B. C. Johnson

NATURE COMMUNICATIONS　6　2015/07

DOI： 10.1038/ncomms8783 　

ISSN： 2041-1723
High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Naoya Iwamoto, Alexander Azarov, Takeshi Ohshima, Anne Marie M. Moe, Bengt G. Svensson

JOURNAL OF APPLIED PHYSICS　118　(4)　2015/07

DOI： 10.1063/1.4927040 　

ISSN： 0021-8979

eISSN： 1089-7550
Atom-Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres Peer-reviewed

Yinlan Ruan, Brant C. Gibson, Desmond W. M. Lau, Andrew D. Greentree, Hong Ji, Heike Ebendorff-Heidepriem, Brett C. Johnson, Takeshi Ohshima, Tanya M. Monro

SCIENTIFIC REPORTS　5　2015/06

DOI： 10.1038/srep11486 　

ISSN： 2045-2322
Single spin optically detected magnetic resonance with 60-90 GHz (E-band) microwave resonators Peer-reviewed

Nabeel Aslam, Matthias Pfender, Rainer Stoehr, Philipp Neumann, Marc Scheffler, Hitoshi Sumiya, Hiroshi Abe, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Joerg Wrachtrup

REVIEW OF SCIENTIFIC INSTRUMENTS　86　(6)　064704　2015/06

DOI： 10.1063/1.4922664 　

ISSN： 0034-6748

eISSN： 1089-7623
Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs Peer-reviewed

Manato Deki, Takahiro Makino, Kazutoshi Kojima, Takuro Tomita, Takeshi Ohshima

Materials Science Forum　Vol.821-823　673-676　2015/05

DOI： 10.4028/www.scientific.net/MSF.821-823.673 　

ISSN： 1662-9752
Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Zeljko Pastuovic, Ivana Capan, David D. Cohen, Jacopo Forneris, Naoya Iwamoto, Takeshi Ohshima, Rainer Siegele, Norihiro Hoshino, Hidekazu Tsuchida

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　348　233-239　2015/04

DOI： 10.1016/j.nimb.2014.12.064 　

ISSN： 0168-583X

eISSN： 1872-9584
Coherent control of single spins in silicon carbide at room temperature Peer-reviewed

Matthias Widmann, Sang-Yun Lee, Torsten Rendler, Nguyen Tien Son, Helmut Fedder, Seoyoung Paik, Li-Ping Yang, Nan Zhao, Sen Yang, Ian Booker, Andrej Denisenko, Mohammad Jamali, S. Ali Momenzadeh, Ilja Gerhardt, Takeshi Ohshima, Adam Gali, Erik Janzen, Joerg Wrachtrup

NATURE MATERIALS　14　(2)　164-168　2015/02

DOI： 10.1038/NMAT4145 　

ISSN： 1476-1122

eISSN： 1476-4660
Isolated electron spins in silicon carbide with millisecond coherence times Peer-reviewed

David J. Christle, Abram L. Falk, Paolo Andrich, Paul V. Klimov, Jawad Ul Hassan, Nguyen T. Son, Erik Janzen, Takeshi Ohshima, David D. Awschalom

NATURE MATERIALS　14　(2)　160-163　2015/02

DOI： 10.1038/NMAT4144 　

ISSN： 1476-1122

eISSN： 1476-4660
Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor Peer-reviewed

Phuc Hong Than, Kazuo Uchida, Takahiro Makino, Takeshi Ohshima, Shinji Nozaki

Mat. Res. Soc. Symp. Proc.　1792　(-)　DOI:10.1557/opl.2015.403--　2015
Publisher: Cambridge Journals
DOI： 10.1557/opl.2015.403 　
Instability of critical electric field in gate oxide film of heavy ion irradiated SiC MOSFETs Peer-reviewed

Manato Deki, Takahiro Makino, Kazutoshi Kojima, Takuro Tomita, Takeshi Ohshima

Materials Science Forum　821-823　673-676　2015
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.821-823.673 　

ISSN： 0255-5476
Nanodiamond in tellurite glass Part II: Practical nanodiamond-doped fibers Peer-reviewed

Yinlan Ruan, Hong Ji, Brett C. Johnson, Takeshi Ohshima, Andrew D. Greentree, Brant C. Gibson, Tanya M. Monro, Heike Ebendorff-Heidepriem

Optical Materials Express　5　(1)　73-87　2015
Publisher: Optical Society of America (OSA)
DOI： 10.1364/OME.5.000073 　

ISSN： 2159-3930
Low-Loss Tellurite Fibers With Embedded Nanodiamonds Peer-reviewed

Heike Ebendorff-Heidepriem, Yinlan Ruan, Hong Ji, Brett C. Johnson, Takeshi Ohshima, Andrew D. Greentree, Brant C. Gibson, Tanya M. Monro

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)　2015

ISSN： 2160-9020
Atom-Photon Coupling from Nitrogen-vacancy Centers Embedded in Tellurite Microspheres Peer-reviewed

Yinlan Ruan, Brant C. Gibson, Desmond W. M. Lau, Andrew D. Greentree, Hong Ji, Heike Ebendorff-Heidepriem, Brett C. Johnson, Takeshi Ohshima, Tanya M. Monro

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)　2015

ISSN： 2160-9020
The effect of luminescence coupling in external quantum efficiency measurement of multi-junction solar cells Peer-reviewed

Mitsunobu Sugai, Mitsuru Imaizumi, Tetsuya Nakamura, Takeshi Ohshima

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　2015

ISSN： 0160-8371
Development of Space Solar Sheet with Inverted Triple-junction Cells Peer-reviewed

Hiroshi Yamaguchi, Ryo Ijichi, Yoshiyuki Suzuki, Sachiyo Ooka, Keiji Shimada, Naoki Takahashi, Hidetoshi Washio, Kazuyo Nakamura, Tatsuya Takamoto, Mitsuru Imaizumi, Taishi Sumita, Kazunori Shimazaki, Tetsuya Nakamura, Takeshi Ohshima

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　2015

ISSN： 0160-8371
Singlet levels of the NV(-)centre in diamond Peer-reviewed

L. J. Rogers, M. W. Doherty, M. S. J. Barson, S. Onoda, T. Ohshima, N. B. Manson

NEW JOURNAL OF PHYSICS　17　2015/01

DOI： 10.1088/1367-2630/17/1/013048 　

ISSN： 1367-2630
X-Ray Characterization of Short Pulse Laser Illuminated Hydrogen Storage Alloys Having Very High Performance Peer-reviewed

Hiroyuki Daido, Hiroshi Abe, Takashi Shobu, Takuya Shimomura, Shinnosuke Tokuhira, Yusuke Takenaka, Takehiro Furuyama, Akihiko Nishimura, Hirohisa Uchida, Takeshi Ohshima

X-RAY LASERS AND COHERENT X-RAY SOURCES: DEVELOPMENT AND APPLICATIONS XI　9589　2015

DOI： 10.1117/12.2186898 　

ISSN： 0277-786X
Ion-induced anomalous charge collection mechanisms in SiC Schottky barrier diodes Peer-reviewed

Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Takeshi Ohshima

Materials Science Forum　821-823　575-578　2015/01

DOI： 10.4028/www.scientific.net/MSF.821-823.575 　

ISSN： 0255-5476
Recovery of the electrical characteristics of SiC MOSFETs irradiated with gamma-rays by thermal treatments Peer-reviewed

Takashi Yokoseki, Takashi Yokoseki, Hiroshi Abe, Takahiro Makino, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima

Materials Science Forum　821-823　705-708　2015/01

DOI： 10.4028/www.scientific.net/MSF.821-823.705 　

ISSN： 0255-5476
Soft errors in silicon-on-insulator static random access memory induced by high-energy heavy-ion irradiation

Satoshi Abo, Masatoshi Hazama, Fujio Wakaya, Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Hidekazu Oda, Mikio Takai

Proceedings of the 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th-RASEDA), 11-13 November 2015, Gunma, Japan　105-108　2015
Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Wataru Kada, Yuya Kambayashi, Yuya Kambayashi, Naoya Iwamoto, Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Masashi Koka, Tomihiro Kamiya, Norihiro Hoshino, Hidekazu Tsuchida, Kazutoshi Kojima, Osamu Hanaizumi, Takeshi Ohshima

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　348　240-245　2015/01/01

DOI： 10.1016/j.nimb.2014.12.054 　

ISSN： 0168-583X

More details Close

c 2015 Elsevier B.V. All rights reserved. In order to study defects that create deep energy levels in semiconductors which act as carrier traps, Charge Transient Spectroscopy using heavy ion microbeams (HIQTS) was developed at JAEA Takasaki. The HIQTS system was connected with the heavy ion microbeam line of the 3 MV Tandem accelerator. Using the HIQTS system, deep levels in 4H-SiC Schottky barrier diodes irradiated with 3 MeV-protons were studied. As a result, a HIQTS peak with an activation energy of 0.73 eV was observed. In addition, local damage in 6H-SiC pn diodes partially irradiated with 12 MeV-O ion microbeams was studied using HIQTS. With increasing 12 MeV-O ion fluence, charge collection efficiency in locally damaged areas decreased and HIQTS signals increased.
New application of NV centers in CVD diamonds as a fluorescent nuclear track detector

Shinobu Onoda, Moriyoshi Haruyama, Moriyoshi Haruyama, Tokuyuki Teraji, Junichi Isoya, Wataru Kada, Osamu Hanaizumi, Takeshi Ohshima

Physica Status Solidi (A) Applications and Materials Science　212　(11)　2641-2644　2015/01/01

DOI： 10.1002/pssa.201532219 　

ISSN： 1862-6300

eISSN： 1862-6319
Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond.

Liu Yan, Chen Gengxu, Rong Youying, McGuinness Liam Paul, Jelezko Fedor, Tamura Syuto, Tanii Takashi, Teraji Tokuyuki, Onoda Shinobu, Ohshima Takeshi, Isoya Junichi, Shinada Takahiro, Wu E, Zeng Heping

Scientific reports　5　2015

DOI： 10.1038/srep12244 　

ISSN： 2045-2322

eISSN： 2045-2322
High Proton Radiation Tolerance of InAsSb Quantum-Well-Based micro-Hall Sensors Peer-reviewed

Abdelkader Abderrahmane, Pil Ju Ko, Hiroshi Okada, Shin-Ichiro Sato, Takeshi Ohshima, Ichiro Shibasaki, Adarsh Sandhu

IEEE ELECTRON DEVICE LETTERS　35　(12)　1305-1307　2014/12

DOI： 10.1109/LED.2014.2359879 　

ISSN： 0741-3106

eISSN： 1558-0563
Charge Collection Characteristics of A Super-Thin Diamond Membrane Detector Measured With High-Energy Heavy Ions Peer-reviewed

N. Iwamoto, T. Makino, W. Kada, N. Skukan, M. Pomorski, V. Grilj, M. Jaksic, S. Onoda, T. Ohshima, T. Kamiya

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　61　(6)　3732-3738　2014/12

DOI： 10.1109/TNS.2014.2360937 　

ISSN： 0018-9499

eISSN： 1558-1578
Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature Peer-reviewed

Abdelkader Abderrahmane, Pil Ju Ko, Hiroshi Okada, Shin-Ichiro Sato, Takeshi Ohshima, Adarsh Sandhu

IEEE ELECTRON DEVICE LETTERS　35　(11)　1130-1132　2014/11

DOI： 10.1109/LED.2014.2358613 　

ISSN： 0741-3106

eISSN： 1558-0563
Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation Peer-reviewed

Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

APPLIED PHYSICS EXPRESS　7　(11)　115201　2014/11

DOI： 10.7567/APEX.7.115201 　

ISSN： 1882-0778

eISSN： 1882-0786
Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy Peer-reviewed

Tran Thien Duc, Galia Pozina, Nguyen Tien Son, Erik Janzen, Takeshi Ohshima, Carl Hemmingsson

APPLIED PHYSICS LETTERS　105　(10)　2014/09

DOI： 10.1063/1.4895390 　

ISSN： 0003-6951

eISSN： 1077-3118
Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles Peer-reviewed

Stefania Castelletto, Brett C. Johnson, Cameron Zachreson, David Beke, Istvan Balogh, Takeshi Ohshima, Igor Aharonovich, Adam Gali

ACS NANO　8　(8)　7938-7947　2014/08

DOI： 10.1021/nn502719y 　

ISSN： 1936-0851

eISSN： 1936-086X
Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions Peer-reviewed

Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanouchi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　61　(4)　1710-1716　2014/08

DOI： 10.1109/TNS.2014.2304738 　

ISSN： 0018-9499

eISSN： 1558-1578
Isotopic identification of engineered nitrogen-vacancy spin qubits in ultrapure diamond Peer-reviewed

T. Yamamoto, S. Onoda, T. Ohshima, T. Teraji, K. Watanabe, S. Koizumi, T. Umeda, L. P. McGuinness, C. Mueller, B. Naydenov, F. Dolde, H. Fedder, J. Honert, M. L. Markham, D. J. Twitchen, J. Wrachtrup, F. Jelezko, J. Isoya

PHYSICAL REVIEW B　90　(8)　081117(R)　2014/08

DOI： 10.1103/PhysRevB.90.081117 　

ISSN： 1098-0121

eISSN： 1550-235X
Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement Peer-reviewed

Wataru Kada, Naoya Iwamoto, Takahiro Satoh, Shinobu Onoda, Veljko Grilj, Natko Skukan, Masashi Koka, Takeshi Ohshima, Milko Jaksic, Tomihiro Kamiya

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　331　113-116　2014/07

DOI： 10.1016/j.nimb.2013.11.040 　

ISSN： 0168-583X

eISSN： 1872-9584
Multimode Storage and Retrieval of Microwave Fields in a Spin Ensemble Peer-reviewed

C. Grezes, B. Julsgaard, Y. Kubo, M. Stern, T. Umeda, J. Isoya, H. Sumiya, H. Abe, S. Onoda, T. Ohshima, V. Jacques, J. Esteve, D. Vion, D. Esteve, K. Molmer, P. Bertet

PHYSICAL REVIEW X　4　(2)　021049　2014/06

DOI： 10.1103/PhysRevX.4.021049 　

ISSN： 2160-3308
Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380 keV Proton Fluence Peer-reviewed

Hiroshi Okada, Yuki Okada, Hiroto Sekiguchi, Akihiro Wakahara, Shin-ichiro Sato, Takeshi Ohshima

IEICE TRANSACTIONS ON ELECTRONICS　E97C　(5)　409-412　2014/05

DOI： 10.1587/transele.E97.C.409 　

ISSN： 1745-1353
In vivo imaging and tracking of individual nanodiamonds in drosophila melanogaster embryos Peer-reviewed

David A. Simpson, Amelia J. Thompson, Mark Kowarsky, Nida F. Zeeshan, Michael S. J. Barson, Liam T. Hall, Yan Yan, Stefan Kaufmann, Brett C. Johnson, Takeshi Ohshima, Frank Caruso, Robert E. Scholten, Robert B. Saint, Michael J. Murray, Lloyd C. L. Hollenberg

BIOMEDICAL OPTICS EXPRESS　5　(4)　1250-1261　2014/04

DOI： 10.1364/BOE.5.001250 　

ISSN： 2156-7085
Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation Peer-reviewed

Masashi Kato, Kazuki Yoshihara, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04EP09　2014/04

DOI： 10.7567/JJAP.53.04EP09 　

ISSN： 0021-4922

eISSN： 1347-4065
Development of radiation-resistant semiconductor devices

田中保宣, 小野田忍, 大島武

放射線　39　(4)　185-188　2014/02
Publisher: 応用物理学会放射線分科会
ISSN： 0285-3604
Quantum error correction in a solid-state hybrid spin register Peer-reviewed

G. Waldherr, Y. Wang, S. Zaiser, M. Jamali, T. Schulte-Herbrueggen, H. Abe, T. Ohshima, J. Isoya, J. F. Du, P. Neumann, J. Wrachtrup

NATURE　506　(7487)　204-+　2014/02

DOI： 10.1038/nature12919 　

ISSN： 0028-0836

eISSN： 1476-4687
A silicon carbide room-temperature single-photon source Peer-reviewed

S. Castelletto, B. C. Johnson, V. Ivady, N. Stavrias, T. Umeda, A. Gali, T. Ohshima

NATURE MATERIALS　13　(2)　151-156　2014/02

DOI： 10.1038/nmat3806 　

ISSN： 1476-1122

eISSN： 1476-4660
The study of dependency of external quantum efficiency of triple-junction solar cells on measurement condition Peer-reviewed

Mitsunobu Sugai, Jiro Harada, Mitsuru Imaizumi, Tetsuya Nakamura, Takeshi Ohshima

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　2605-2610　2014
Development of irradiation methods and degradation modeling for state-of-the-art space solar cells Peer-reviewed

Takeshi Ohshima, Shin-ichiro Sato, Taishi Sumita, Tetsuya Nakamura, Mitsuru Imaizumi

ENERGY HARVESTING AND STORAGE: MATERIALS, DEVICES, AND APPLICATIONS V　9115　2014

DOI： 10.1117/12.2052810 　

ISSN： 0277-786X
C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance Peer-reviewed

T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　414-+　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.414 　

ISSN： 0255-5476
Effect of Annealing on Proton Irradiated AlGaN/GaN based micro-Hall sensors Peer-reviewed

A. Abderrahmane, H. Takahashi, T. Tashiro, P. J. Ko, H. Okada, S. Sato, T. Ohshima, A. Sandhu

IRAGO CONFERENCE 2013　1585　123-127　2014

DOI： 10.1063/1.4866629 　

ISSN： 0094-243X
Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons Peer-reviewed

A. Abderrahmane, T. Tashiro, H. Takahashi, P. J. Ko, H. Okada, S. Sato, T. Ohshima, A. Sandhu

APPLIED PHYSICS LETTERS　104　(2)　2014/01

DOI： 10.1063/1.4861902 　

ISSN： 0003-6951

eISSN： 1077-3118
Opportunity of single atom control for quantum processing in silicon and diamond Peer-reviewed

Takahiro Shinada, Prati Enrico, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, Fedor Jelezko, Junichi Isoya

2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)　2014

ISSN： 2161-4636
Development of Self Powered Gamma Detector (SPGD) with Lead Emitter

柴田晃, 武内伴照, 大塚紀彰, 斎藤隆, 小野田忍, 大島武, 土谷邦彦

日本原子力研究開発機構JAEA-Technology(Web)　(2013-043)　WEB ONLY　2014/01
Hydrogen at zinc vacancy of ZnO: an EPR and ESEEM study Peer-reviewed

N. T. Son, J. Isoya, I. G. Ivanov, T. Ohshima, E. Janzen

INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013　1583　341-344　2014

DOI： 10.1063/1.4865666 　

ISSN： 0094-243X
Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance Peer-reviewed

R. Hoheisel, M. Gonzalez, M. P. Lumb, D. A. Scheiman, S. R. Messenger, C. G. Bailey, J. Lorentzen, T. N. D. Tibbits, M. Imaizumi, T. Ohshima, S. Sato, P. P. Jenkins, R. J. Walters

IEEE JOURNAL OF PHOTOVOLTAICS　4　(1)　253-259　2014/01

DOI： 10.1109/JPHOTOV.2013.2289935 　

ISSN： 2156-3381
Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring Peer-reviewed

Natsuko Fujita, Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　1042-1045　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.1042 　

ISSN： 0255-5476
Ternperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide Peer-reviewed

Manato Deki, Tomoki Oka, Shodai Takayoshi, Yoshiki Naoi, Takahiro Makino, Takeshi Ohshima, Takuro Tomita

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　661-+　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.661 　

ISSN： 0255-5476
Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SIC Peer-reviewed

Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　503-+　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.503 　

ISSN： 0255-5476
Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses Peer-reviewed

Manato Deki, T. Makino, K. Kojima, T. Tomita, T. Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　440-+　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.440 　

ISSN： 0255-5476
Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy Peer-reviewed

Naoya Iwamoto, Shinobu Onoda, Natsuko Fujita, Takahiro Makino, Takeshi Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　289-292　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.289 　

ISSN： 0255-5476
Identification of structures of the deep levels in 4H-SiC Peer-reviewed

Hiroki Nakane, Masashi Kato, Masaya Ichimura, Takeshi Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　277-+　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.277 　

ISSN： 0255-5476
Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 degrees C and 1500 degrees C and Measurements of Lifetime and Photoluminescence Peer-reviewed

W. M. Klahold, R. P. Devaty, W. J. Choyke, K. Kawahara, T. Kimoto, T. Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2　778-780　273-+　2014

DOI： 10.4028/www.scientific.net/MSF.778-780.273 　

ISSN： 0255-5476
Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors Peer-reviewed

Manato Deki, Takahiro Makino, Naoya Iwamoto, Shinobu Onoda, Kazutoshi Kojima, Takuro Tomita, Takeshi Ohshima

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　319　75-78　2014/01

DOI： 10.1016/j.nimb.2013.09.014 　

ISSN： 0168-583X

eISSN： 1872-9584
An ultra-thin diamond membrane as a transmission particle detector and vacuum window for external microbeams Peer-reviewed

V. Grilj, N. Skukan, M. Pomorski, W. Kada, N. Iwamoto, T. Kamiya, T. Ohshima, M. Jaksic

APPLIED PHYSICS LETTERS　103　(24)　243106　2013/12

DOI： 10.1063/1.4833236 　

ISSN： 0003-6951

eISSN： 1077-3118
Enhanced Charge Collection by Single Ion Strike in AlGaN/GaN HEMTs Peer-reviewed

S. Onoda, A. Hasuike, Y. Nabeshima, H. Sasaki, K. Yajima, S-i. Sato, T. Ohshima

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　60　(6)　4446-4450　2013/12

DOI： 10.1109/TNS.2013.2289373 　

ISSN： 0018-9499

eISSN： 1558-1578
Strongly coupled diamond spin qubits by molecular nitrogen implantation Peer-reviewed

Takashi Yamamoto, Christoph Mueller, Liam P. McGuinness, Tokuyuki Teraji, Boris Naydenov, Shinobu Onoda, Takeshi Ohshima, Joerg Wrachtrup, Fedor Jelezko, Junichi Isoya

PHYSICAL REVIEW B　88　(20)　201201　2013/11

DOI： 10.1103/PhysRevB.88.201201 　

ISSN： 1098-0121

eISSN： 1550-235X
Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons Peer-reviewed

Shin-ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

PROGRESS IN PHOTOVOLTAICS　21　(7)　1499-1506　2013/11

DOI： 10.1002/pip.2342 　

ISSN： 1062-7995

eISSN： 1099-159X
Ion-induced changes in semiconductor properties of hydrogenated amorphous silicon Peer-reviewed

Shin-ichiro Sato, Takeshi Ohshima

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　314　153-157　2013/11

DOI： 10.1016/j.nimb.2013.05.042 　

ISSN： 0168-583X

eISSN： 1872-9584
Degradation Behavior of Flexible a-Si/a-SiGe/a-SiGe Triple-Junction Solar Cells Irradiated With Protons Peer-reviewed

Shin-ichiro Sato, Kevin Beernink, Takeshi Ohshima

IEEE JOURNAL OF PHOTOVOLTAICS　3　(4)　1415-1422　2013/10

DOI： 10.1109/JPHOTOV.2013.2271672 　

ISSN： 2156-3381
Extending spin coherence times of diamond qubits by high-temperature annealing Peer-reviewed

T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. McGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honert, J. Wrachtrup, T. Ohshima, F. Jelezko, J. Isoya

Physical Review B - Condensed Matter and Materials Physics　88　(7)　075206　2013/08/23

DOI： 10.1103/PhysRevB.88.075206 　

ISSN： 1098-0121 1550-235X

eISSN： 1550-235X
Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO Peer-reviewed

Nguyen Tien Son, Junichi Isoya, Ivan G. Ivanov, Takeshi Ohshima, Erik Janzen

JOURNAL OF PHYSICS-CONDENSED MATTER　25　(33)　335804　2013/08

DOI： 10.1088/0953-8984/25/33/335804 　

ISSN： 0953-8984
Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes Peer-reviewed

Takahiro Makino, Manato Deki, Naoya Iwamoto, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Toshio Hirao, Takeshi Ohshima

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　60　(4)　2647-2650　2013/08

DOI： 10.1109/TNS.2013.2243469 　

ISSN： 0018-9499
Effects of ultra-intense laser driven proton beam on the hydriding property of palladium Peer-reviewed

Hiroshi Abe, Satoshi Orimo, Masahiko Kishimoto, Shigeo Aone, Hirohisa Uchida, Hiroyuki Daido, Takeshi Ohshima

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　307　218-220　2013/07

DOI： 10.1016/j.nimb.2013.01.024 　

ISSN： 0168-583X

eISSN： 1872-9584
Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe Peer-reviewed

Stefan Kaufmann, David A. Simpson, Liam T. Hall, Viktor Perunicic, Philipp Senn, Steffen Steinert, Liam P. McGuinness, Brett C. Johnson, Takeshi Ohshima, Frank Caruso, Joerg Wrachtrup, Robert E. Scholten, Paul Mulvaney, Lloyd Hollenberg

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA　110　(27)　10894-10898　2013/07

DOI： 10.1073/pnas.1300640110 　

ISSN： 0027-8424
Experimental implementation of assisted quantum adiabatic passage in a single spin Peer-reviewed

Jingfu Zhang, Jeong Hyun Shim, Ingo Niemeyer, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, Dieter Suter

Physical Review Letters　110　(24)　240501　2013/06/11

DOI： 10.1103/PhysRevLett.110.240501 　

ISSN： 0031-9007 1079-7114

eISSN： 1079-7114
Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated With Self Ions Peer-reviewed

Shin-ichiro Sato, Takeshi Ohshima

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　60　(3)　2288-2299　2013/06

DOI： 10.1109/TNS.2013.2261320 　

ISSN： 0018-9499

eISSN： 1558-1578
Effect of proton irradiation on AlGaN/GaN micro-Hall sensors Peer-reviewed

Abderrahmane, A, Koide, S, Okada, H, Takahashi, H, Sato, S, Ohshima, T, Sandhu, A

APPLIED PHYSICS LETTERS　102　(19)　2013/05

DOI： 10.1063/1.4805357 　

ISSN： 0003-6951
Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector Peer-reviewed

Iwamoto Naoya, Onoda Shinobu, Makino Takahiro, Ohshima Takeshi, Kojima Kazutoshi, Nozaki Shinji

Micro- and Nanotechnology Sensors, Systems, and Applications　8725　2013/05

DOI： 10.1117/12.2016464 　

ISSN： 0277-786X
Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors Peer-reviewed

N. Iwamoto, B. C. Johnson, N. Hoshino, M. Ito, H. Tsuchida, K. Kojima, T. Ohshima

JOURNAL OF APPLIED PHYSICS　113　(14)　143714　2013/04

DOI： 10.1063/1.4801797 　

ISSN： 0021-8979
Broadband excitation by chirped pulses: Application to single electron spins in diamond

I. Niemeyer, J. H. Shim, J. Zhang, D. Suter, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, F. Jelezko

New Journal of Physics　15　033027　2013/03

DOI： 10.1088/1367-2630/15/3/033027 　

ISSN： 1367-2630
SiC MOS interface states: Difference between Si face and C face Peer-reviewed

T. Umeda, M. Okamoto, R. Kosugi, S. Harada, R. Arai, Y. Sato, T. Makino, T. Ohshima

ECS Transactions　58　(7)　55-60　2013
Publisher: Electrochemical Society Inc.
DOI： 10.1149/05807.0055ecst 　

ISSN： 1938-6737 1938-5862
Radiation Effects in Solar Cells Peer-reviewed

Mitsuru Imaizumi, Takeshi Ohshima

MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS V　8725　2013

DOI： 10.1117/12.2015362 　

ISSN： 0277-786X
A Room Temperature Single Photon Source in Silicon Carbide Peer-reviewed

S. Castelletto, B. C. Johnson, V. Ivady, N. Stavrias, T. Umeda, A. Gali, T. Ohshima

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)　2013

ISSN： 2160-9020
Influence of Generated Charge by High Energy Ion Irradiation on Soft Error Rate in SOI SRAM Peer-reviewed

M. Hazama, S. Abo, F. Wakaya, T. Makino, S. Onoda, T. Ohshima, T. Iwamatsu, H. Oda, M. Takai

JAEA Review　2013-059　8　2013
Focused Microbeam Irradiation Effects in Transmission CVD Diamond Film Detectors Peer-reviewed

W. Kada, T. Kamiya, N. Iwamoto, Shinobu Onoda, Veljko Grilj, N. Skukan, T. Makino, M. Koka, T. Satoh, M. Jakšić, T. Ohshima

Trans. Mat. Res. Soc. Japan　38　(2)　279-282　2013
Publisher: The Materials Research Society of Japan
DOI： 10.14723/tmrsj.38.279 　

ISSN： 1382-3469

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The response of chemical vapor deposited (CVD) diamond thin film to focused ionized particle irradiation was investigated in order to evaluate the films use as a transmission detector for heavy ion hits from azimuthally varying field (AVF) cyclotron at the Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency. A spectroscopic grade Single-Crystalline (SC) CVD diamond film with thickness of 50 μm was prepared and characterized by using an ion beam-induced charge (IBIC) system with a 3 MeV H⁺ microbeam and a transient ion beam-induced current (TIBIC) system with a 15 MeV O⁴⁺ microbeam. The IBIC signals decreased significantly during a short period of microbeam irradiation, whereas the signal responded satisfactorily to the alpha particles from an ²⁴¹Am radiation source. The peak degradation due to microbeam irradiation was quickly recovered by releasing the bias. These effects can be explained by terms of polarization due to charge capture by defects in the SC-CVD diamond.
Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation Peer-reviewed

T. Ohshima, S. Sato, M. Imaizumi, T. Nakamura, T. Sugaya, K. Matsubara, S. Niki

SOLAR ENERGY MATERIALS AND SOLAR CELLS　108　263-268　2013/01

DOI： 10.1016/j.solmat.2012.09.027 　

ISSN： 0927-0248

eISSN： 1879-3398
Breakdown Voltage In Silicon Carbide Metal-Oxide-Semiconductor Devices Induced By Ion Beams Peer-reviewed

T. Ohshima, M. Deki, T. Makino, N. Iwamoto, S. Onoda, T. Hirao, K. Kojima, T. Tomita, S. Matsuo, S. Hashimoto

APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY　1525　654-658　2013

DOI： 10.1063/1.4802408 　

ISSN： 0094-243X
Deep levels in p-type 4H-SiC induced by low-energy electron irradiation Peer-reviewed

Kazuki Yoshihara, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2012　740-742　373-+　2013

DOI： 10.4028/www.scientific.net/MSF.740-742.373 　

ISSN： 0255-5476
E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy Peer-reviewed

A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, A. R. Peaker

APPLIED PHYSICS LETTERS　102　(3)　032104　2013/01

DOI： 10.1063/1.4788814 　

ISSN： 0003-6951
Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation

Murata Kohji, Morine Tatsuya, Matsuura Hideharu, Onoda Shinobu, Ohshima Takeshi

Technical report of IEICE. SDM　112　(337)　13-18　2012/12/07
Publisher: 一般社団法人電子情報通信学会
ISSN： 0913-5685

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SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, SiC attracts attention as a next-generation power device. Although the designs for semiconductor device structures require a lot of electrical properties in semiconductors, however, there is little information on SiC, especially related with resistance to radiation. In our laboratory, therefore, the temperature dependences of majority-carrier concentrations and mobilities in SiC have been measured by Hall-effect measurements using the van der Pauw method. As a result, it turns out that the irradiation of high-energy electrons to Al-doped SiC reduces the hole concentration and mobility. In this study, we simulate the temperature dependences of hole mobilities due to several scattering mechanisms, and discuss the hole scattering mechanism which affects the experimentally-obtained hole mobility the most.
Transmission charged-particle detectors using CVD diamond thin film for single ion hit measurement

Wataru Kada, Takahiro Satoh, Takahiro Makino, Shinobu Onoda, Masashi Koka, Takeshi Ohshima, Tomihiro Kamiya, Veljko Grilj, Natko Skukan, Milko Jaksic

Proceedings of the 26th Workshop on Radiation Detectors and Their Uses　89-98　2012/12/01
Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions Peer-reviewed

Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanocuhi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno

JOURNAL OF LATEX CLASS FILES　11　(4)　1-3　2012/12/01
Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC Peer-reviewed

F. C. Beyer, C. G. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzen

JOURNAL OF PHYSICS D-APPLIED PHYSICS　45　(45)　455301(1-7)　2012/11

DOI： 10.1088/0022-3727/45/45/455301 　

ISSN： 0022-3727

eISSN： 1361-6463
Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments Peer-reviewed

Abderrahmane Abdelkader, Koide Shota, Sato Shin-Ichiro, Ohshima Takeshi, Sandhu Adarsh, Okada Hiroshi

Ieee Transactions on Magnetics　48　(11)　4421-4423　2012/11

DOI： 10.1109/TMAG.2012.2196986 　

ISSN： 0018-9464
Negative-U System of Carbon Vacancy in 4H-SiC Peer-reviewed

N. T. Son, X. T. Trinh, L. S. Lovlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzen

PHYSICAL REVIEW LETTERS　109　(18)　187603(1-5)　2012/10

DOI： 10.1103/PhysRevLett.109.187603 　

ISSN： 0031-9007
Electron spin resonance detected by a superconducting qubit

Y. Kubo, I. Diniz, C. Grezes, T. Umeda, J. Isoya, H. Sumiya, T. Yamamoto, H. Abe, S. Onoda, T. Ohshima, V. Jacques, A. Dréau, J. F. Roch, A. Auffeves, D. Vion, D. Esteve, P. Bertet

Physical Review B - Condensed Matter and Materials Physics　86　2012/08/10

DOI： 10.1103/PhysRevB.86.064514 　

ISSN： 1098-0121
Spatial, LET and Range Dependence of Enhanced Charge Collection by Single Ion Strike in 4H-SiC MESFETs Peer-reviewed

Onoda Shinobu, Makino Takahiro, Ono Shuich, Katakami Shuji, Arai Manabu, Ohshima Takeshi

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　59　(4)　742-748　2012/08

DOI： 10.1109/TNS.2012.2195199 　

ISSN： 0018-9499
SiC半導体デバイスの進展と放射線

田中保宣, 小野田忍, 大島武

放射線と産業　(132)　54-58　2012/06/01
Publisher: 放射線利用振興協会
ISSN： 0286-8873
Peak degradation of heavy-ion induced transient currents in 6H-SiC MOS capacitors

T. Makino, N. Iwamoto, N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, S. Nozaki

Materials Science Forum　717-720　469-472　2012/05/28

DOI： 10.4028/www.scientific.net/MSF.717-720.469 　

ISSN： 0255-5476
Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy: Their impact on the degraded charge collection efficiency

N. Iwamoto, N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, S. Nozaki

Materials Science Forum　717-720　267-270　2012/05/28

DOI： 10.4028/www.scientific.net/MSF.717-720.267 　

ISSN： 0255-5476
Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC Peer-reviewed

F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl

APPLIED PHYSICS LETTERS　100　(13)　2012/03

DOI： 10.1063/1.3699269 　

ISSN： 0003-6951
Electrical Conduction Properties of SiC Modified by Femtosecond Laser Peer-reviewed

Ito Takuto, Deki Manato, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

JOURNAL OF LASER MICRO NANOENGINEERING　7　(1)　16-20　2012/02

DOI： 10.2961/jlmn.2012.01.0003 　

ISSN： 1880-0688
Difference of soft error rates in SOI SRAM induced by various high energy ion species Peer-reviewed

Satoshi Abo, Naoyuki Masuda, Fujio Wakaya, Tivadar Lohner, Shinobu Onoda, Takahiro Makino, Toshio Hirao, Takeshi Ohshima, Toshiaki Iwamatsu, Hidekazu Oda, Mikio Takai

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　273　262-265　2012/02

DOI： 10.1016/j.nimb.2011.07.090 　

ISSN： 0168-583X
Dopant effects on solid phase epitaxy in silicon and germanium Peer-reviewed

B. C. Johnson, T. Ohshima, J. C. McCallum

JOURNAL OF APPLIED PHYSICS　111　(3)　034906　2012/02

DOI： 10.1063/1.3682532 　

ISSN： 0021-8979
Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation Peer-reviewed

Masashi Kato, Yoshinori Matsushita, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　028006-1-028006-2　2012/02

DOI： 10.1143/JJAP.51.028006 　

ISSN： 0021-4922
Diamonds Utilized in the Development of Single Ion Detector with High Spatial Resolution

Onoda Shinobu, Yamamoto Takashi, Ohshima Takeshi, Isoya Junichi, Teraji Tokuyuki, Watanabe Kenji

Trans. Mat. Res. Soc. Japan　37　(2)　241-244　2012
Publisher: The Materials Research Society of Japan
DOI： 10.14723/tmrsj.37.241 　

ISSN： 1382-3469

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We are developing the Ion Photon Emission Microscopy (IPEM) system at JAEA. To observe a map by IPEM, the position where an ion strikes a scintillator placed over a microelectronics circuit is recorded together with the ion induced event. Since the spatial resolution is determined by the spot size of the Ion Beam Induced Luminescence (IBIL), the scintillator is one of the most important parts of IPEM. In this study we propose that a diamond containing a high concentration of Nitrogen Vacancy (NV) centers can be used as a scintillator with high spatial resolution. For both Y₃Al₅O₁₂:Ce (YAG:Ce) and the diamond containing NV centers, the minimum spot size is a few micrometers. The IBIL intensity from the diamond containing NV centers is higher than that from YAG:Ce. According to these results, we suggest that a diamond containing NV centers is a rival candidate of a YAG:Ce from the point of view of single ion detection with high spatial resolution.
SiC MOS interface states: Similarity and dissimilarity from silicon Peer-reviewed

T. Umeda, R. Kosugi, Y. Sakuma, Y. Satoh, H. Okamoto, S. Harada, T. Ohshima

ECS Transactions　50　(4)　305-311　2012

DOI： 10.1149/05004.0305ecst 　

ISSN： 1938-5862 1938-6737
Defect Levels in Low-Doped 4H-SiC Schottky Barrier Diodes Detected by Using Alpha Particles Peer-reviewed

N. Iwamoto, B. C. Johnson, N. Hoshino, M. Ito, H. Tsuchida, T. Ohshima

2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012)　169-+　2012

ISSN： 1097-2137
STUDIES OF RADIATION EFFECTS ON SEMICONDUCTOR DEVICES AT JAEA Peer-reviewed

Takeshi Ohshima

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 30　(30)　9-16　2012

ISSN： 0914-2908
Fabrication Of Single Photon Centres In Silicon Carbide Peer-reviewed

B. C. Johnson, S. Castelletto, T. Ohshima, T. Umeda

2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012)　217-+　2012

ISSN： 1097-2137
Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC Peer-reviewed

R.P. Devaty, F. Yan, W.J. Choyke, A. Gali, T. Kimoto, T. Ohshima

Materials Science Forum　717-720　263-266　2012

DOI： 10.4028/www.scientific.net/MSF.717-720.263 　
Spatial, LET and range dependence of enhanced charge collection by single ion strike in 4H-SiC MESFETs

S. Onoda, T. Makino, S. Ono, S. Katakami, M. Arai, T. Ohshima

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS　36-41　2011/12/01

DOI： 10.1109/RADECS.2011.6131381 　
Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p(+)n Diode Irradiated With High-Energy Electrons Peer-reviewed

Naoya Iwamoto, Atsushi Koizumi, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, Shunpei Koike, Kazuo Uchida, Shinji Nozaki

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　58　(6)　3328-3332　2011/12

DOI： 10.1109/TNS.2011.2167631 　

ISSN： 0018-9499
Hybrid Quantum Circuit with a Superconducting Qubit Coupled to a Spin Ensemble Peer-reviewed

Y. Kubo, C. Grezes, A. Dewes, T. Umeda, J. Isoya, H. Sumiya, N. Morishita, H. Abe, S. Onoda, T. Ohshima, V. Jacques, A. Dreau, J. -F. Roch, I. Diniz, A. Auffeves, D. Vion, D. Esteve, P. Bertet

PHYSICAL REVIEW LETTERS　107　(22)　220501　2011/11

DOI： 10.1103/PhysRevLett.107.220501 　

ISSN： 0031-9007
Charge generated in 6H-SiC n(+)p diodes by MeV range heavy ions Peer-reviewed

T. Ohshima, N. Iwamoto, S. Onoda, G. Wagner, H. Itoh, K. Kawano

SURFACE & COATINGS TECHNOLOGY　206　(5)　864-868　2011/11

DOI： 10.1016/j.surfcoat.2011.03.097 　

ISSN： 0257-8972
Effect of a body-tie structure fabricated by partial trench isolation on the suppression of floating body effect induced soft errors in SOI SRAM investigated using nuclear probes Peer-reviewed

Satoshi Abo, Naoyuki Masuda, Fujio Wakaya, Shinobu Onoda, Takahiro Makino, Toshio Hirao, Takeshi Ohshima, Toshiaki Iwamatsu, Hidekazu Oda, Mikio Takai

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　269　(20)　2360-2363　2011/10

DOI： 10.1016/j.nimb.2011.02.053 　

ISSN： 0168-583X
Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance Peer-reviewed

T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, T. Ohshima, N. Morishita, J. Isoya

APPLIED PHYSICS LETTERS　99　(14)　142105　2011/10

DOI： 10.1063/1.3644156 　

ISSN： 0003-6951
Characterization of LiNbO

Miyazaki Hisashi, Morimoto Jun, Toda Kohji, Onoda Shinobu, Ohshima Takeshi

Jpn J Appl Phys　50　(7)　07HB07-07HB07-4　2011/07/25
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/JJAP.50.07HB07 　

ISSN： 0021-4922

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Electron irradiation effects on lithium niobate (LiNbO₃) single crystals have been investigated by photoacoustic spectroscopy (PAS), Fourier transform infrared (FT-IR) spectroscopy, and Raman scattering spectroscopy. The photoacoustic signal intensity at 750 nm increase with increasing electron electron fluence. The OH- absorption spectra in the IR region are used to examine the defect structure of LiNbO₃. The absorption spectra are almost the same at electron fluencies below $5 \times 10^{17}$/cm2. We found that the influence of the electron irradiation was different between the mirror-polished side and the as-sliced side, as determined from the Raman spectra. There was no change in the Raman spectra on the mirror-polished LiNbO₃surface side. The control of the composition is most important to avoid the effects of electron irradiation.
Characterization of LiNbO3 Single-Crystal Substrates Irradiated with Electrons Peer-reviewed

Hisashi Miyazaki, Jun Morimoto, Kohji Toda, Shinobu Onoda, Takeshi Ohshima

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　07HB07-1-07HB07-4　2011/07

DOI： 10.1143/JJAP.50.07HB07 　

ISSN： 0021-4922
耐放射線性の炭化ケイ素半導体デバイスの開発

大島武, 小野田忍, 田中保宣, 新井学

Isot News　(686)　8-12　2011/06/01

ISSN： 0285-5518
Defects at nitrogen site in electron-irradiated AlN Peer-reviewed

N. T. Son, A. Gali, A. Szabo, M. Bickermann, T. Ohshima, J. Isoya, E. Janzen

APPLIED PHYSICS LETTERS　98　(24)　242116　2011/06

DOI： 10.1063/1.3600638 　

ISSN： 0003-6951
Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment Peer-reviewed

Shin-ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

APPLIED PHYSICS EXPRESS　4　(6)　061401-1-061401-3　2011/06

DOI： 10.1143/APEX.4.061401 　

ISSN： 1882-0778
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC Peer-reviewed

F. C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, E. Janzen, J. Isoya, N. Morishita, T. Ohshima

JOURNAL OF APPLIED PHYSICS　109　(10)　103703　2011/05

DOI： 10.1063/1.3586042 　

ISSN： 0021-8979

eISSN： 1089-7550
EPR Identification of Intrinsic Defects in SiC Peer-reviewed

J. Isoya, T. Umeda, N. Mizuochi, Nguyen Tien Son, E. Janzén, T. Ohshima

Silicon Carbide　1　147-179　2011/04/28
Publisher: Wiley-VCH
DOI： 10.1002/9783527629053.ch6 　
Enhancement of local electrical conductivities in SiC by femtosecond laser modification Peer-reviewed

Manato Deki, Takuto Ito, Minoru Yamamoto, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

APPLIED PHYSICS LETTERS　98　(13)　133104　2011/03

DOI： 10.1063/1.3573786 　

ISSN： 0003-6951

eISSN： 1077-3118
Degradation mechanisms of cable insulation materials during radiation-thermal ageing in radiation environment Peer-reviewed

Tadao Seguchi, Kiyotoshi Tamura, Takeshi Ohshima, Akihiko Shimada, Hisaaki Kudoh

RADIATION PHYSICS AND CHEMISTRY　80　(2)　268-273　2011/02

DOI： 10.1016/j.radphyschem.2010.07.045 　

ISSN： 0969-806X
Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection Peer-reviewed

N. Iwamoto, S. Onoda, T. Makino, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, S. Nozaki

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　58　(1)　305-313　2011/02

DOI： 10.1109/TNS.2010.2096432 　

ISSN： 0018-9499
Radiation degradation and damage coefficients of InGaP/GaAs/Ge triple-junction solar cell by low-energy electrons Peer-reviewed

Mitsuru Imaizumi, Chiharu Morioka, Taishi Sumita, Takeshi Ohshima, Shuichi Okuda

Conference Record of the IEEE Photovoltaic Specialists Conference　001579-001582　2011

DOI： 10.1109/PVSC.2011.6186259 　

ISSN： 0160-8371
Effect of Body-tie Structure Fabricated by Partial Trench Isolation for Suppression of Soft Errors in SOI SRAM Investigated by Helium and Oxygen Ion Probes Peer-reviewed

S. Abo, N. Masuda, F. Wakaya, S. Onoda, T. Makino, T. Hirao, T. Ohshima, T. Iwamatsu, H. Oda, M. Takai

JAEA Review　2011-043　5　2011
Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation Peer-reviewed

Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2010　679-680　181-+　2011

DOI： 10.4028/www.scientific.net/MSF.679-680.181 　

ISSN： 0255-5476
Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC Peer-reviewed

Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki

SILICON CARBIDE AND RELATED MATERIALS 2010　679-680　201-+　2011

DOI： 10.4028/www.scientific.net/MSF.679-680.201 　

ISSN： 0255-5476
Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100 degrees C to 1500 degrees C Peer-reviewed

F. Yan, A. Espenlaub, R. P. Devaty, T. Ohshima, W. J. Choyke

SILICON CARBIDE AND RELATED MATERIALS 2010　679-680　237-+　2011

DOI： 10.4028/www.scientific.net/MSF.679-680.237 　

ISSN： 0255-5476
Observation of bistable defects in electron irradiated n-type 4H-SiC Peer-reviewed

Franziska C. Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Erik Janzen

SILICON CARBIDE AND RELATED MATERIALS 2010　679-680　249-+　2011

DOI： 10.4028/www.scientific.net/MSF.679-680.249 　

ISSN： 0255-5476
Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-rays Peer-reviewed

Takeshi Ohshima, Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Shinji Nozaki, Kazutoshi Kojima

SILICON CARBIDE AND RELATED MATERIALS 2010　679-680　362-+　2011

DOI： 10.4028/www.scientific.net/MSF.679-680.362 　

ISSN： 0255-5476
Electrically detected ESR study of interface defects in 4H-SiC metal-oxide-semiconductor field effect transistor Peer-reviewed

T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima, J. Isoya

SILICON CARBIDE AND RELATED MATERIALS 2010　679-680　370-+　2011

DOI： 10.4028/www.scientific.net/MSF.679-680.370 　

ISSN： 0255-5476
Co-60 Gamma-Ray Irradiation Effects on Pentacene-Based Organic Thin-film Transistors Peer-reviewed

Li Cai, Toshio Hirao, Hiroaki Yano, Zongfan Duan, Hideharu Takayanagi, Hideharu Ueki, Takeshi Ohshima, Yasushiro Nishioka

FUNCTIONAL AND ELECTRONIC MATERIALS　687　576-+　2011

DOI： 10.4028/www.scientific.net/MSF.687.576 　

ISSN： 0255-5476
Characteristics of Gamma-Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors Peer-reviewed

Hiroaki Yano, Li Cai, Toshio Hirao, Zongfan Duan, Yutaro Takayanagi, Hirokuni Ohuchi, Hideharu Ueki, Takeshi Ohshima, Yasushiro Nishioka

EMERGING FOCUS ON ADVANCED MATERIALS, PTS 1 AND 2　306-307　185-+　2011

DOI： 10.4028/www.scientific.net/AMR.306-307.185 　

ISSN： 1022-6680
Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation Peer-reviewed

H. Matsuura, H. Yanagisawa, K. Nishino, T. Nojiri, Y. Myojin, Y. Matsuyama, S. Onoda, T. Ohshima

The Open Applied Physics Journal　4　37-40　2011
Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors Peer-reviewed

T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, M. Deki, S. Nozaki

APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE　1336　660-664　2011

DOI： 10.1063/1.3586184 　

ISSN： 0094-243X
EPR and ab initio calculation study on the EI4 center in 4H- and 6H-SiC Peer-reviewed

P. Carlsson, N. T. Son, A. Gali, J. Isoya, N. Morishita, T. Ohshima, B. Magnusson, E. Janzen

PHYSICAL REVIEW B　82　(23)　2010/12

DOI： 10.1103/PhysRevB.82.235203 　

ISSN： 1098-0121
Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike Peer-reviewed

Onoda Shinobu, Makino Takahiro, Iwamoto Naoya, Vizkelethy Gyorgy, Kojima Kazutoshi, Nozaki Shinji, Ohshima Takeshi

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　57　(6)　3373-3379　2010/12

DOI： 10.1109/TNS.2010.2070076 　

ISSN： 0018-9499
Defects in low-energy electron-irradiated n-type 4H-SiC Peer-reviewed

F. C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzen

PHYSICA SCRIPTA　T141　2010/11

DOI： 10.1088/0031-8949/2010/T141/014006 　

ISSN： 0031-8949
Radiation-induced defects in GaN Peer-reviewed

N. T. Son, C. G. Hemmingsson, N. Morishita, T. Ohshima, T. Paskova, K. R. Evans, A. Usui, J. Isoya, B. Monemar, E. Janzen

PHYSICA SCRIPTA　T141　2010/11

DOI： 10.1088/0031-8949/2010/T141/014015 　

ISSN： 0031-8949
EPR and ENDOR Studies of Shallow Donors in SiC Peer-reviewed

N. T. Son, J. Isoya, T. Umeda, I. G. Ivanov, A. Henry, T. Ohshima, E. Janzen

APPLIED MAGNETIC RESONANCE　39　(1-2)　49-85　2010/10

DOI： 10.1007/s00723-010-0134-z 　

ISSN： 0937-9347

eISSN： 1613-7507
Bistable defects in low-energy electron irradiated n-type 4H-SiC Peer-reviewed

F. C. Beyer, C. G. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzen

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS　4　(8-9)　227-229　2010/09

DOI： 10.1002/pssr.201004249 　

ISSN： 1862-6254
Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

T. Umeda, J. Isoya, T. Ohshima, S. Onoda, N. Morishita, K. Okonogi, S. Shiratake

Applied Physics Letters　97　(4)　41911-41911　2010/07/26
Publisher: American Institute of Physics
DOI： 10.1063/1.3473763 　

ISSN： 0003-6951
Study of ion-beam-induced damage and luminescence properties in terbium-implanted AlGaN Peer-reviewed

Ji Ho Park, Akihiro Wakahara, Hiroshi Okada, Yuzo Furukawa, Yong Tae Kim, Ho Jung Chang, Jonghan Song, Sangwon Shin, Jong Han Lee, Shin Ichiro Sato, Takeshi Ohshima

Japanese Journal of Applied Physics　49　(3)　32401-032401-5　2010/07/01
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/JJAP.49.032401 　

ISSN： 0021-4922

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Terbium (Tb) ions were implanted into Al0.35Ga0.65N epitaxial layers at room temperature to investigate ion-beam-induced damage and luminescence properties at various doses of 1 × 1012-2.8 × 1016 Tb/cm2. Rutherford backscattering spectrometry/channeling (RBS/channeling) reveals that ion-beam-induced damage level steeply increases and that the damage cannot be fully suppressed even after rapid thermal annealing at 1100°C, when the dose exceeds 5 × 1014 Tb/cm2. However, cathodoluminescence (CL) intensity related to Tb3+ transitions increased initially and saturated above a dose of 1 × 1013 Tb/cm2. Furthermore, transient decay time determined by time-resolved photoluminescence (TRPL) decreased faster and a fast decay component related to the formation of nonradiative Tb-defect complexes became dominant, as Tb ion dose increases. Therefore, the results suggest that Tb-related luminescence properties are much susceptible to defects and nonradiative defects, namely, Tb-defect complexes, are formed under low-dose conditions even at a very low structural defect density. ? 2010 The Japan Society of Applied Physics.
Evaluation of soft error rates using nuclear probes in bulk and SOI SRAMs with a technology node of 90 nm Peer-reviewed

Abo Satoshi, Masuda Naoyuki, Wakaya Fujio, Onoda Shinobu, Hirao Toshio, Ohshima Takeshi, Iwamatsu Toshiaki, Takai Mikio

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　268　(11-12)　2074-2077　2010/06

DOI： 10.1016/j.nimb.2010.02.027 　

ISSN： 0168-583X
Phase transformation of Mg-Fe alloys Peer-reviewed

Yasuhiro Yoneda, Hiroshi Abe, Takeshi Ohshima, Hirohisa Uchida

JOURNAL OF APPLIED PHYSICS　107　(9)　2010/05

DOI： 10.1063/1.3402498 　

ISSN： 0021-8979
Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Peer-reviewed

Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA

Materials Science Forum　645-648　207-210　2010/04
Radiation effects on semiconductors and polymers for space applications

Takeshi Ohshima, Shinobu Onoda, Yugo Kimoto

Charged Particle and Photon Interactions with Matter: Recent Advances, Applications, and Interfaces　841-877　2010/01/01
Publisher: CRC Press
DOI： 10.1201/b10389 　
VERIFICATION OF SOFT-ERROR RATE ESTIMATION METHOD IN A LOGIC LSI Peer-reviewed

T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, K. Hirose

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28　28　35-40　2010

ISSN： 0914-2908
Defects in low-energy electron-irradiated n-type 4H-SiC Peer-reviewed

F. C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzén

Physica Scripta T　T141　2010

DOI： 10.1088/0031-8949/2010/T141/014006 　

ISSN： 0281-1847
Radiation-induced defects in GaN Peer-reviewed

N. T. Son, C. G. Hemmingsson, N. Morishita, T. Ohshima, T. Paskova, K. R. Evans, A. Usui, J. Isoya, B. Monemar, E. Janzén

Physica Scripta T　T141　2010

DOI： 10.1088/0031-8949/2010/T141/014015 　

ISSN： 0281-1847
The EI4 EPR centre in 6H SiC Peer-reviewed

P. Carlsson, N. T. Son, B. Magnusson, J. Isoya, N. Morishita, T. Ohshima, E. Janzén

Physica Scripta T　T141　2010

DOI： 10.1088/0031-8949/2010/T141/014013 　

ISSN： 0281-1847
Deep defects in 3C-SiC generated by H+- and He +-implantation or by irradiation with high-energy electrons Peer-reviewed

M. Weidner, L. Trapaidze, G. Pensl, S. A. Reshanov, A. Schöner, H. Itoh, T. Ohshima, T. Kimoto

Materials Science Forum　645-648　439-443　2010
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.645-648.439 　

ISSN： 0255-5476
EFFECTS OF IRRADIATION BEAM CONDITIONS ON RADIATION DEGRADATION OF SOLAR CELLS Peer-reviewed

Masashi Saito, Mitsuru Imaizumi, Takeshi Ohshima, Yasuo Takeda

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE　2010

ISSN： 0160-8371
Metastable defects in low-energy electron irradiated n-type 4H-SiC Peer-reviewed

Franziska C. Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Erik Janzen

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2　645-648　435-+　2010

DOI： 10.4028/www.scientific.net/MSF.645-648.435 　

ISSN： 0255-5476
The carbon vacancy related EI4 defect in 4H-SiC Peer-reviewed

N. T. Son, P. Carlsson, J. Isoya, N. Monshita, T. Ohshima, B. Magnusson, E. Janzen

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2　645-648　399-+　2010

DOI： 10.4028/www.scientific.net/MSF.645-648399 　

ISSN： 0255-5476
New lines and issues associated with deep defect spectra in electron, proton and ⁴He ion irradiated 4H SiC Peer-reviewed

F. Yan, R.P. Devaty, W.J. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali

Materials Science Forum　645-648　411-414　2010

DOI： 10.4028/www.scientific.net/MSF.645-648.411 　
Radiation hardness evaluation of SiC-BGSIT Peer-reviewed

Tanaka Yasunori, Onoda Shinobu, Takatsuka Akio, Ohshima Takeshi, Yatsuo Tsutomu

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2　645-648　941-+　2010

DOI： 10.4028/www.scientific.net/MSF.645-648.941 　

ISSN： 0255-5476
Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 keV or 1 MeV electrons

F. Yan, R. P. Devaty, W. J. Choyke, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl

Materials Science Forum　645-648　419-422　2010/01/01

DOI： 10.4028/www.scientific.net/MSF.645-648.419 　

ISSN： 0255-5476
Shallow defects observed in as-grown and electron-irradiated or He⁺-implanted Al-doped 4H-SiC epilayers

S. Beljakowa, S. A. Reshanov, B. Zippelius, M. Krieger, G. Pensl, K. Danno, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke

Materials Science Forum　645-648　427-430　2010/01/01

DOI： 10.4028/www.scientific.net/MSF.645-648.427 　

ISSN： 0255-5476
Current transient effect in N-channel 6H-SiC MOSFET induced by heavy ion irradiation

Kin Kiong Lee, Jamie S. Laird, T. Ohshima, S. Onoda, T. Hirao, H. Itoh

Materials Science Forum　645-648　1013-1016　2010/01/01

DOI： 10.4028/www.scientific.net/MSF.645-648.1013 　

ISSN： 0255-5476
Charge collection efficiency of 6H-SiC p⁺n diodes degraded by low-energy electron irradiation

N. Iwamoto, N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, S. Nozaki

Materials Science Forum　645-648　921-924　2010/01/01

DOI： 10.4028/www.scientific.net/MSF.645-648.921 　

ISSN： 0255-5476
Thermal stability of defect centers in n- and p-type 4H-SiC epilayers generated by irradiation with High-energy electrons

S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke

Materials Science Forum　645-648　423-426　2010/01/01

DOI： 10.4028/www.scientific.net/MSF.645-648.423 　

ISSN： 0255-5476
Evaluation of Soft Errors using Nuclear Probes in SOI SRAM with Body-tie Structure Fabricated by Partial Trench Isolation

Satoshi Abo, Naoyuki Masuda, Fujio Wakaya, Shinobu Onoda, Takahiro Makino, Toshio Hirao, Takeshi Ohshima, Toshiaki Iwamatsu, Hidekazu Oda, Mikio Takai

Proceedings of the 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (9th-RASEDA), 27-29 October 2010, Gunma, Japan　72-75　2010
Evaluation of Soft Error Rates in SOI SRAM with a Technology Node of 90 nm Using Oxygen Ion Probe Peer-reviewed

S. Abo, N. Masuda, F. Wakaya, S. Onoda, T. Makino, T. Hirao, T. Ohshima, T. Iwamatsu, H. Oda, M. Takai

JAEA Review　2010-065　7　2010
Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide Peer-reviewed

Takuro Tomita, Masahiro Iwami, Minoru Yamamoto, Manato Deki, Shigeki Matsuo, Shuichi Hashimoto, Yoshinori Nakagawa, Takahiro Kitada, Toshiro Isu, Shingo Saito, Kiyomi Sakai, Shinobu Onoda, Takeshi Ohshima

Materials Science Forum　645-648　239-242　2010/01

DOI： 10.4028/www.scientific.net/MSF.645-648.239 　
Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge Peer-reviewed

Elfiky Dalia, Yamaguchi Masafumi, Sasaki Takuo, Takamoto Tatsuya, Morioka Chiharu, Imaizumi Mitsuru, Ohshima Takeshi, Sato Shin-ichiro, Elnawawy Mohamed, Eldesuky Tarek, Ghitas Ahmed

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(12)　121202-121202-5　2010

DOI： 10.1143/JJAP.49.121202 　

ISSN： 0021-4922
Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime Peer-reviewed

Elfiky Dalia, Yamaguchi Masafumi, Sasaki Takuo, Takamoto Tatsuya, Morioka Chiharu, Imaizumi Mitsuru, Ohshima Takeshi, Sato Shin-ichiro, Elnawawy Mohamed, Eldesoky Tarek, Ghitas Ahmed

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(12)　121201-121201-7　2010

DOI： 10.1143/JJAP.49.121201 　

ISSN： 0021-4922
Radiation hardness assessment of high voltage 4H-SiC BJTs Peer-reviewed

M. Nawaz, C. Zaring, S. Onoda, T. Ohshima, M. Östling

Device Research Conference - Conference Digest, DRC　279-280　2009/12/11

DOI： 10.1109/DRC.2009.5354932 　

ISSN： 1548-3770
Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing Peer-reviewed

Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Yoshiko Myojin, Takunori Nojiri, Yukei Matsuyama, Takeshi Ohshima

PHYSICA B-CONDENSED MATTER　404　(23-24)　4755-4757　2009/12

DOI： 10.1016/j.physb.2009.08.192 　

ISSN： 0921-4526
The role of a radial ion-track distribution in semiconductors studied by numerical simulations Peer-reviewed

Onoda Shinobu, Hirao Toshio, Ohshima Takeshi, Itoh Hisayoshi

RADIATION PHYSICS AND CHEMISTRY　78　(12)　1116-1119　2009/12

DOI： 10.1016/j.radphyschem.2009.06.025 　

ISSN： 0969-806X
Soft-Error Rate in a Logic LSI Estimated From SET Pulse-Width Measurements Peer-reviewed

Makino Takahiro, Kobayashi Daisuke, Hirose Kazuyuki, Takahashi Daisuke, Ishii Shigeru, Kusano Masaki, Onoda Shinobu, Hirao Toshio, Ohshima Takeshi

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　56　(6)　3180-3184　2009/12

DOI： 10.1109/TNS.2009.2033795 　

ISSN： 0018-9499
Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs Peer-reviewed

Onoda Shinobu, Iwamoto Naoya, Ono Shuich, Katakami Shuji, Arai Manabu, Kawano Katsuyasu, Ohshima Takeshi

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　56　(6)　3218-3222　2009/12

DOI： 10.1109/TNS.2009.2032395 　

ISSN： 0018-9499
Effects of the surface condition of the substrates on the electrical characteristics of 4H-SiC MOSFETs

T. Ohshima, S. Onoda, T. Kamada, K. Hotta, K. Kawata, O. Eryu

Materials Science Forum　615 617　781-784　2009/12/01

DOI： 10.4028/www.scientific.net/MSF.615-617.781 　

ISSN： 0255-5476
Transient currents induced in 6H-SiC MOS capacitors by oxygen ion incidence

N. Iwamoto, N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, K. Kawano

Materials Science Forum　615 617　517-520　2009/12/01

DOI： 10.4028/www.scientific.net/MSF.615-617.517 　

ISSN： 0255-5476
Charge collection properties of 6H-SiC diodes by wide variety of charged particles up to several hundreds MeV

S. Onoda, N. Iwamoto, N. Iwamoto, M. Murakami, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, I. Nakano

Materials Science Forum　615 617　861-864　2009/12/01

DOI： 10.4028/www.scientific.net/MSF.615-617.861 　

ISSN： 0255-5476
Identification of the gallium vacancy-oxygen pair defect in GaN Peer-reviewed

N. T. Son, C. G. Hemmingsson, T. Paskova, K. R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, B. Monemar, E. Janzen

PHYSICAL REVIEW B　80　(15)　2009/10

DOI： 10.1103/PhysRevB.80.153202 　

ISSN： 1098-0121
Identification of a Frenkel-pair defect in electron-irradiated 3C SiC

N. T. Son, E. Janzen, J. Isoya, N. Morishita, H. Hanaya, H. Takizawa, T. Ohshima, A. Gali

PHYSICAL REVIEW B　80　(12)　125201(1-8)　2009/09

DOI： 10.1103/PhysRevB.80.125201 　

ISSN： 1098-0121
Light emitting FET based-on spatially selective doping of Eu in AlGaN/GaN HEMT Peer-reviewed

Hiroshi Okada, Kazumasa Takemoto, Fumitake Oikawa, Yuzo Furukawa, Akihiro Wakahara, Shin ichiro Sato, Takeshi Ohshima

Physica Status Solidi (C) Current Topics in Solid State Physics　6　(52)　S631-S634　2009/07/01

DOI： 10.1002/pssc.200880811 　

ISSN： 1862-6351

More details Close

Light emitting field effect transistor (FET) based-on AlGaN/GaN high electron mobility transistor (HEMT) structure with spatially selective doping of rare-earth ions (REIs) as a luminescence center in the channel is proposed and investigated. Fabricated device showed excellent I -V characteristics as a transistor with gate control. By applying a drain bias of 20 V, red emission suggesting a luminescence from Eu ion was clearly observed. Applying a negative bias to the Schottky gate decreased the luminescence intensity. ? 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Comparative study of transient current induced in SiC p(+)n and n(+)p diodes by heavy ion micro beams Peer-reviewed

Ohshima Takeshi, Iwamoto Naoya, Onoda Shinobu, Kamiya Tomihiro, Kawano Katsuyasu

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　267　(12-13)　2189-2192　2009/06/15

DOI： 10.1016/j.nimb.2009.03.056 　

ISSN： 0168-583X
Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

T. Hirao, S. Onoda, M. Oikawa, M. Oikawa, T. Satoh, T. Kamiya, T. Ohshima

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　267　2216-2218　2009/06/15

DOI： 10.1016/j.nimb.2009.03.051 　

ISSN： 0168-583X
Time Resolved Ion Beam Induced Current measurements on MOS capacitors using a cyclotron microbeam

G. Vizkelethy, S. Onoda, T. Hirao, T. Ohshima, T. Kamiya

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　267　2185-2188　2009/06/15

DOI： 10.1016/j.nimb.2009.03.057 　

ISSN： 0168-583X
Change in ion beam induced current from Si metal-oxide- semiconductor capacitors after gamma-ray irradiation

T. Ohshima, S. Onoda, T. Hirao, Y. Takahashi, G. Vizkelethy, B. L. Doyle

AIP Conference Proceedings　1099　1014-1017　2009/05/05

DOI： 10.1063/1.3119985 　

ISSN： 0094-243X
Deep levels in low-energy electron-irradiated 4H-SiC

P. Carlsson, N. T. Son, F. C. Beyer, H. Pedersen, J. Isoya, N. Morishita, T. Ohshima, E. Janzen

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS　3　(4)　121-123　2009/05

DOI： 10.1002/pssr.200903060 　

ISSN： 1862-6254
Degradation of Charge Collection Efficiency for 6H-SiC diodes by electron irradiation

N. Iwamoto, N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami, M. Murakami, I. Nakano, K. Kawano

Materials Science Forum　600-603　1043-1046　2009/04/10

DOI： 10.4028/3-908453-11-9.1043 　

ISSN： 0255-5476
Transient response to high energy heavy ions in 6H-SiC n+p diodes

S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto, N. Iwamoto, K. Kojima, K. Kawano

Materials Science Forum　600-603　1039-1042　2009/04/10

DOI： 10.4028/3-908453-11-9.1039 　

ISSN： 0255-5476
Dicarbon antisite defect in n-type 4H-SiC Peer-reviewed

T. Umeda, J. Isoya, N. Morishita, T. Ohshima, E. Janzen, A. Gali

PHYSICAL REVIEW B　79　(11)　2009/03

DOI： 10.1103/PhysRevB.79.115211 　

ISSN： 1098-0121
Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy Peer-reviewed

S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2　600-603　417-+　2009

DOI： 10.4028/3-908453-11-9.417 　

ISSN： 0255-5476
Structural and magnetic properties of Mn-Doped SiC Peer-reviewed

Fumiyoshi Takano, Wenhong Wang, Hironori Ofuchi, Takeshi Ohshima, Hiro Akinaga

AIP Conference Proceedings　1199　443-444　2009

DOI： 10.1063/1.3295496 　

ISSN： 0094-243X 1551-7616
TRANSIENT CURRENT MAPPING USING FOCUSED HEAVY-ION MICROBEAMS WITH SEVERAL HUNDREDS OF MEV Peer-reviewed

S. Onoda, T. Hirao, T. Ohshima

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY　(27)　43-46　2009

ISSN： 0914-2908
Identification of The Negative Di-carbon Antisite Defect in n-type 4H-SiC Peer-reviewed

A. Gali, T. Umeda, E. Janzen, N. Morishita, T. Ohshima, J. Isoya

SILICON CARBIDE AND RELATED MATERIALS 2008　615-617　361-364　2009

ISSN： 0255-5476
Reduction of Interface Traps and Enhancement of Channel Mobility in n-channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays Peer-reviewed

S. Hishiki, S. A. Reshanov, T. Ohshima, H. Itoh, G. Pensl

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2　600-603　703-+　2009

ISSN： 0255-5476
RADIATION RESISTANCE OF InGaP/GaAs DUAL-JUNCTION THIN-FILM SPACE SOLAR CELL Peer-reviewed

Mitsuru Imaizumi, Takeshi Ohshima, Tatsuya Takamoto

2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3　1549-+　2009

ISSN： 0160-8371
Photo-EPR Studies on Low-Energy Electron-irradiated 4H-SiC Peer-reviewed

P. Carlsson, N. T. Son, H. Pedersen, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, E. Janzen

SILICON CARBIDE AND RELATED MATERIALS 2008　615-617　401-404　2009

ISSN： 0255-5476
Defects Introduced by Electron-irradiation at Low Temperatures in SiC Peer-reviewed

N. T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, A. Gali, E. Janzen

SILICON CARBIDE AND RELATED MATERIALS 2008　615-617　377-380　2009

ISSN： 0255-5476
Pulsed EPR Studies of the T-v2a Center in 4H-SiC Peer-reviewed

J. Isoya, T. Umeda, N. Mizuochi, T. Ohshima

SILICON CARBIDE AND RELATED MATERIALS 2008　615-617　353-356　2009

ISSN： 0255-5476
Effects of Fabrication Process on the Electrical Characteristics of n-channel MOSFETs Irradiated with Gamma-Rays Peer-reviewed

S. Hishiki, N. Iwamoto, T. Ohshima, H. Itoh, K. Kojima, K. Kawano

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2　600-603　707-+　2009

ISSN： 0255-5476
Photo-EPR Study of Vacancy-type Defects in Irradiated n-type 4H-SiC Peer-reviewed

T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2　600-603　409-+　2009

ISSN： 0255-5476
RADIATION DEGRADATION MODELING OF TRIPLE-JUNCTION SPACE SOLAR CELLS Peer-reviewed

Sato Shin-ichiro, Imaizumi Mitsuru, Ohshima Takeshi

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY　(27)　37-42　2009

ISSN： 0914-2908
Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices Due to Radiations Peer-reviewed

Onoda Shinobu, Iwamoto Naoya, Hirao Toshio, Kawano Katsuyasu, Kojima Kazuhisa, Ohshima Takeshi

APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY　1099　1010-1013　2009

DOI： 10.1063/1.3119984 　

ISSN： 0094-243X
Dependence on Irradiation Energy of Soft Error Rates in Bulk and SOI SRAMs Peer-reviewed

S. Abo, S. Onoda, T. Hirao, T. Ohshima, T. Iwamatsu, M. Takai

JAEA Review　2009-041　8　2009
EPR identification of defects and impurities in SiC: To be decisive Peer-reviewed

J. Isoya, T. Umeda, N. Mizuochi, N.T. Son, E. Janzen, T. Ohshima

Material Science Forum　600-603　279-284　2008/09

DOI： 10.4028/www.scientific.net/MSF.600-603.279 　
Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation Peer-reviewed

Hideharu Matsuura, Nobumasa Minohara, Takeshi Ohshima

JOURNAL OF APPLIED PHYSICS　104　(4)　2008/08

DOI： 10.1063/1.2969788 　

ISSN： 0021-8979

eISSN： 1089-7550
Mechanisms of reduction in hole concentration in Al-implanted p-type 6H-SiC by 1 MeV electron irradiation Peer-reviewed

Hideharu Matsuura, Keisuke Izawa, Nobumasa Minohara, Takeshi Ohshima

JAPANESE JOURNAL OF APPLIED PHYSICS　47　(7)　5355-5357　2008/07

DOI： 10.1143/JJAP.47.5355 　

ISSN： 0021-4922

eISSN： 1347-4065
EPR Identification of Intrinsic Defects in 4H-SiC Peer-reviewed

J. Isoya, T. Umeda, N. Mizuochi, N.T. Son, E. Janzen, T. Ohshima

Wileyphysica status solidi (b)　245　(7)　1298-1314　2008/06

DOI： 10.1002/pssb.200844209 　
Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

N. T. Son, I. G. Ivanov, A. Kuznetsov, B. G. Svensson, Q. X. Zhao, M. Willander, M. N. Morishita, T. Ohshima, H. Itoh, J. Isoya, E. Janzen, R. Yakimova

JOURNAL OF CRYSTAL GROWTH　310　(5)　1006-1009　2008/03

DOI： 10.1016/j.jcrysgro.2007.11.144 　

ISSN： 0022-0248
380 keV proton irradiation effects on photoluminescence of Eu-doped GaN Peer-reviewed

Hiroshi Okada, Yasuo Nakanishi, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　266　(5)　853-856　2008/03/01

DOI： 10.1016/j.nimb.2007.12.103 　

ISSN： 0168-583X

More details Close

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1 × 10 13 cm - 2, a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3 + kept the initial PL intensity after the proton irradiation up to 1 × 10 14 cm - 2. Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment. ? 2008 Elsevier B.V. All rights reserved.
Durability of triple-junction solar cell for HIHT environments, Venus and Mercury exploration missions

M. Imaizumi, H. Toyota, T. Shimada, H. Ogawa, M. Tajima, T. Hisamatsu, K. Nakamura, T. Takamoto, S. Satoh, T. Ohshima

European Space Agency, (Special Publication) ESA SP　(661)　2008

ISSN： 0379-6566
Gas evolution from insulating materials for superconducting coil of ITER by gamma ray irradiation at liquid nitrogen temperature Peer-reviewed

A. Idesaki, N. Koizumi, M. Sugimoto, N. Morishita, T. Ohshima, K. Okuno

AIP Conference Proceedings　986　169-173　2008

DOI： 10.1063/1.2900341 　

ISSN： 0094-243X 1551-7616
Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurement Peer-reviewed

A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima, H. Itoh

Physica Status Solidi (A) Applications and Materials Science　205　(1)　56-59　2008/01

DOI： 10.1002/pssa.200776703 　

ISSN： 1862-6300 1862-6319
Enhanced annealing of the Z(1/2) defect in 4H-SiC epilayers Peer-reviewed

Liutauras Storasta, Hidekazu Tsuchida, Tetsuya Miyazawa, Takeshi Ohshima

JOURNAL OF APPLIED PHYSICS　103　(1)　2008/01

DOI： 10.1063/1.2829776 　

ISSN： 0021-8979
Electrical characteristics of 6H-SiC mosfets after high dose irradiation Peer-reviewed

T. Ohshima, S. Hishiki, N. Iwamoto, S. A. Reshanov, G. Pensl, K. Kojima, K. Kawano

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS　(26)　31-34　2008

ISSN： 0914-2908
Decrease in ion beam induced charge of 6H-SiC diodes Peer-reviewed

S. Onoda, N. Iwamoto, T. Ohshima, T. Hirao, K. Kawano

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS　(26)　35-40　2008

ISSN： 0914-2908
Electron Paramagnetic Resonance study on n-type electron-irradiated 3C-SiC Peer-reviewed

P. Carlsson, K. Rabia, N. T. Son, T. Ohshima, N. Morishita, H. Itoh, J. Isoya, E. Janzen

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY　100　2008

DOI： 10.1088/1742-6596/100/4/042032 　

ISSN： 1742-6588
Charge collection efficiency of 6H-SiC diodes damaged by electron irradiation Peer-reviewed

N. Iwamoto, T. Ohshima, S. Onoda, S. Hishiki, M. Murakami, I. Nakano, K. Kawano

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS　(26)　27-30　2008

ISSN： 0914-2908
Magnetic resonance studies of defects in electron-irradiated ZnO substrates Peer-reviewed

N. T. Son, I. G. Ivanov, A. Yu. Kuznetsov, B. G. Svensson, Q. X. Zhao, M. Willander, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, E. Janzen, R. Yakimova

PHYSICA B-CONDENSED MATTER　401　507-510　2007/12

DOI： 10.1016/j.physb.2007.09.010 　

ISSN： 0921-4526
Impact of auger recombination on charge collection of a 6H-SiC diode by heavy ions

S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kawano

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　54　(6)　2706-2713　2007/12

DOI： 10.1109/TNS.2007.908459 　

ISSN： 0018-9499
Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy Peer-reviewed

S.A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, H. Itoh, F. Yan, R.P. Devaty, W.J. Choyke

Journal of Applied Physics　102　(11)　2007/12/01
Publisher: American Institute of Physics
DOI： 10.1063/1.2818050 　

ISSN： 0021-8979
Decrease of charge collection due to displacement damage by gamma rays in a 6H-SiC diode Peer-reviewed

Onoda Shinobu, Ohshima Takeshi, Hirao Toshio, Mishima Kenta, Hishiki Shigeomi, Iwamoto Naoya, Kojima Kazuhisa, Kawano Katsuyasu

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　54　(6)　1953-1960　2007/12

DOI： 10.1109/TNS.2007.910203 　

ISSN： 0018-9499
The role of ion track structure on high-injection carrier dynamics in high-speed Si and III-V optoelectronic sensors Peer-reviewed

Laird Jamie S, Onoda Shinobu, Hirao Toshio, Edmonds Larry, Ohshima Takeshi

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　54　(6)　2384-2393　2007/12

DOI： 10.1109/TNS.2007.911421 　

ISSN： 0018-9499
Recombination centers in as-grown and electron-irradiated ZnO substrates

N. T. Son, I. G. Ivanov, A. Kuznetsov, B. G. Svensson, Q. X. Zhao, M. Willander, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, E. Janzen, R. Yakimova

JOURNAL OF APPLIED PHYSICS　102　(9)　093504　2007/11

DOI： 10.1063/1.2802186 　

ISSN： 0021-8979
Energetically deep defect centers in vapor-phase grown zinc oxide Peer-reviewed

T. Frank, G. Pensl, R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás, V. Muñoz-Sanjosé, T. Ohshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann, B. Meyer

Applied Physics A: Materials Science and Processing　88　(1)　141-145　2007/07

DOI： 10.1007/s00339-007-3963-3 　

ISSN： 0947-8396 1432-0630
Analysis of anomalous degradation of Cu(In,Ga)Se-2 thin-film solar cells irradiated with protons Peer-reviewed

Shirou Kawakita, Mitsuru Imaizumi, Koichi Kibe, Takeshi Ohshima, Hisayoshi Itoh, Shinichi Yoda, Osamu Odawara

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　46　(25-28)　L670-L672　2007/07

DOI： 10.1143/JJAP.46.L670 　

ISSN： 0021-4922
Radiation resistance of wide band gap n+/p AlInGaP solar cell for high-efficient multijunction space solar cells Peer-reviewed

Hae-Seok Lee, Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Aurangzeb Khan, Tatsuya Takamoto, Mitsuru Imaizumi, Takeshi Ohshima, Hisayoshi Itoh

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　46　(25-28)　L645-L647　2007/07

DOI： 10.1143/JJAP.46.L645 　

ISSN： 0021-4922
Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC Peer-reviewed

T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, A. Gali

PHYSICAL REVIEW B　75　(24)　2007/06

DOI： 10.1103/PhysRevB.75.245202 　

ISSN： 1098-0121

eISSN： 1550-235X
Degradation of charge collection efficiency obtained for 6H-SiC n+p diodes irradiated with gold ions

T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, S. Hishiki, T. Hirao, T. Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, G. Wagner, H. Itoh

Materials Science Forum　556-557　913-916　2007
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.556-557.913 　

ISSN： 1662-9752 0255-5476
Mechanisms of decrease in hole concentration in al-doped 4H-SiC by irradiation of 200 keV electrons

Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh

Materials Science Forum　556-557　379-382　2007
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.556-557.379 　

ISSN： 1662-9752 0255-5476
Recovery of short circuit current of 3J solar cells by current injection at low temperature Peer-reviewed

Haruki Miyamoto, Takeshi Ohshima, Mitsuru Imaizumi, Hisayoshi Itoh, Koichi Kibe, Katsuyasu Kawano

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4　2　1815-1817　2007

DOI： 10.1109/WCPEC.2006.279845 　
Characterization of Mn-doped 3C-SiC prepared by ion implantation Peer-reviewed

Fumiyoshi Takano, Wenhong Wang, Hiro Akinaga, Hironori Ofuchi, Shigeomi Hishiki, Takeshi Ohshima

Journal of Applied Physics　101　(9)　2007

DOI： 10.1063/1.2709749 　

ISSN： 0021-8979
Hall effect and admittance measurements of n-channel 6H-SiC MOSFETs Peer-reviewed

Kin Kiong Lee, Michael Laube, Takeshi Ohshima, Hisayoshi Itoh, Gerhard Pensl

SILICON CARBIDE AND RELATED MATERIALS 2006　556-557　791-+　2007

ISSN： 0255-5476
Electron paramagnetic resonance study of carbon antisite-vacancy pair in p-type 4H-SiC Peer-reviewed

T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya

SILICON CARBIDE AND RELATED MATERIALS 2006　556-557　453-+　2007

ISSN： 0255-5476
Quenching of Impact Ionization in Heavy Ion Induced Tracks in Wide Bandwidth Si Avalanche Photodiodes Peer-reviewed

Laird Jamie S, Onoda Shinobu, Hirao Toshio, Edmonds Larry, Ohshima Takeshi

RADECS 2007: PROCEEDINGS OF THE 9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS　508-+　2007

DOI： 10.1109/RADECS.2007.5205467 　
Photoluminescence evaluation of light element impurities in ultrathin SOI wafers by luminescence activation using electron irradiation Peer-reviewed

S. Nakagawa, Y. Sone, M. Tajima, T. Ohshima, H. Itoh

Materials Science and Engineering B: Solid-State Materials for Advanced Technology　134　(2-3)　172-175　2006/10/15

DOI： 10.1016/j.mseb.2006.07.003 　

ISSN： 0921-5107
Anomalous increase in effective channel mobility on gamma-irradiated p-channel SiC metal-oxide-semiconductor field-effect transistors containing step bunching Peer-reviewed

Kin Kiong Lee, Takeshi Ohshima, Akihiko Ohi, Hisayoshi Itoh, Gerhard Pensl

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　45　(9A)　6830-6836　2006/09

DOI： 10.1143/JJAP.45.6830 　

ISSN： 0021-4922
Structural analysis of (Ga,Mn)N epilayers and self-organized dots using MeV ion channeling Peer-reviewed

S. Kuroda, S. Marcet, E. Bellet-Amalric, J. Cibert, H. Mariette, S. Yamamoto, T. Sakai, T. Ohshima, H. Itoh

Physica Status Solidi (A) Applications and Materials Science　203　(7)　1724-1728　2006/05

DOI： 10.1002/pssa.200565396 　

ISSN： 1862-6300 1862-6319
Si substrate suitable for radiation-resistant space solar cells Peer-reviewed

Hideharu Matsuura, Hirofumi Iwata, Sou Kagamihara, Ryohei Ishihara, Masahiko Komeda, Hideaki Imai, Masanori Kikuta, Yuuki Inoue, Tadashi Hisamatsu, Shirou Kawakita, Takeshi Ohshima, Hisayoshi Itoh

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　45　(4 A)　2648-2655　2006/04/07

DOI： 10.1143/JJAP.45.2648 　

ISSN： 0021-4922 1347-4065
Fluorescence EXAFS study on local structures around Eu atoms implanted in AlxGa1-xN International-journal Peer-reviewed

H Ofuchi, T Nishlwaki, K Takaba, K Ogawa, M Tabuchi, Y Takeda, A Wakahara, A Yoshida, T Ohshima, H Itoe

PHYSICA B-CONDENSED MATTER　376　496-498　2006/04

DOI： 10.1016/j.physb.2005.12.126 　

ISSN： 0921-4526

eISSN： 1873-2135
Identification of divacancies in 4H-SiC Peer-reviewed

N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzén

Physica B: Condensed Matter　376-377　(1)　334-337　2006/04/01

DOI： 10.1016/j.physb.2005.12.086 　

ISSN： 0921-4526
Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells Peer-reviewed

H. S. Lee, M. Yamaguchi, N. J. Ekins-Daukes, A. Khan, T. Takamoto, M. Imaizumi, T. Ohshima, H. Itoh

Physica B: Condensed Matter　376-377　(1)　564-567　2006/04/01

DOI： 10.1016/j.physb.2005.12.142 　

ISSN： 0921-4526
Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC Peer-reviewed

H Matsuura, S Kagamihara, Y Itoh, T Ohshima, H Itoh

PHYSICA B-CONDENSED MATTER　376　342-345　2006/04

DOI： 10.1016/j.physb.2005.12.088 　

ISSN： 0921-4526
Identification of the carbon antisite-vacancy pair in 4H-SiC

T Umeda, NT Son, J Isoya, E Janzen, T Ohshima, N Morishita, H Itoh, A Gali, M Bockstedte

PHYSICAL REVIEW LETTERS　96　(14)　145501(1-4)　2006/04

DOI： 10.1103/PhysRevLett.96.145501 　

ISSN： 0031-9007
Divacancy in 4H-SiC Peer-reviewed

NT Son, P Carlsson, J ul Hassan, E Janzen, T Umeda, J Isoya, A Gali, M Bockstedte, N Morishita, T Ohshima, H Itoh

PHYSICAL REVIEW LETTERS　96　(5)　2006/02

DOI： 10.1103/PhysRevLett.96.055501 　

ISSN： 0031-9007
Study of electron irradiation-induced defects in CuInSe2 and CuInxGa1-xSe2 by electron spin resonance Peer-reviewed

H. Okada, H. S. Lee, A. Wakahara, A. Yoshida, T. Ohshima, T. Kamiya

Solar Energy Materials and Solar Cells　90　(1)　93-99　2006/01/06

DOI： 10.1016/j.solmat.2005.03.005 　

ISSN： 0927-0248
Self-organized dots of GaN:Mn grown by molecular beam epitaxy

S. Kuroda, S. Marcet, D. Halley, D. Ferrand, J. Cibert, H. Mariette, S. Yamamoto, T. Sakai, T. Ohshima, H. Itoh

Physica Status Solidi (C) Current Topics in Solid State Physics　3　(11)　3967-3970　2006

DOI： 10.1002/pssc.200671601 　

ISSN： 1862-6351
Deactivation of nitrogen donors in silicon carbide Peer-reviewed

F. Schmid, S. A. Reshanov, H. B. Weber, G. Pensl, M. Bockstedte, A. Mattausch, O. Pankratov, T. Ohshima, H. Itoh

Physical Review B - Condensed Matter and Materials Physics　74　(24)　2006

DOI： 10.1103/PhysRevB.74.245212 　

ISSN： 1098-0121 1550-235X
Defect-engineering in SiC by ion implantation and electron irradiation Peer-reviewed

G. Pensl, F. Ciobanu, T. Frank, D. Kirmse, M. Krieger, S. Reshanov, F. Schmid, M. Weidner, T. Ohshima, H. Itoh, W. J. Choyke

Microelectronic Engineering　83　(1)　146-149　2006/01

DOI： 10.1016/j.mee.2005.10.040 　

ISSN： 0167-9317
Electron paramagnetic resonance study of the HEI4/SI5 center in 4H-SiC Peer-reviewed

T. Urneda, N. T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, E. Janzen

Silicon Carbide and Related Materials 2005, Pts 1 and 2　527-529　543-546　2006

ISSN： 0255-5476
Shallow P donors in 3C-, 4H-, and 6H-SiC Peer-reviewed

J. Isoya, M. Katagiri, T. Umeda, N. T. Son, A. Henry, A. Gali, N. Morishita, T. Ohshima, H. Itoh, E. Janzen

Silicon Carbide and Related Materials 2005, Pts 1 and 2　527-529　593-596　2006

ISSN： 0255-5476
Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation Peer-reviewed

H Matsuura, S Kagamihara, Y Itoh, T Ohshima, H Itoh

MICROELECTRONIC ENGINEERING　83　(1)　17-19　2006/01

DOI： 10.1016/j.mee.2005.10.015 　

ISSN： 0167-9317
Current injection effects on the electrical performance of 3J solar cells irradiated with low and high energy protons Peer-reviewed

Takeshi Ohshima, Haruki Miyamoto, Mitsuru Imaizumi, Chiharu Morioka, Shirou Kawakita, Kazunori Shimazaki, Koichi Kibe, Katsuyasu Kawano, Hisayoshi Itoh

CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2　1818-+　2006
Divacancy model for P6/P7 centers in 4H-and 6H-SiC Peer-reviewed

N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzen

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2　527-529　527-530　2006

ISSN： 0255-5476
Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells Peer-reviewed

Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Hae-Seok Lee, Taishi Sumita, Mitsuru Imaizumi, Tatsuya Takamoto, Takaaki Agui, Minoru Kaneiwa, Kunio Kamimura, Takeshi Ohshima, Hisayoshi Itoh

CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2　1789-+　2006
Charge induced in 6H-SiC PN diodes by irradiation of oxygen ion microbeams Peer-reviewed

T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, T. Hirao, H. Itoh

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2　527-529　1347-+　2006

ISSN： 0255-5476
Minority-carrier injection-enhanced recovery of radiationinduced defects in n(+)p alingap solar cells Peer-reviewed

Hae-Seok Lee, Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Aurangzeb Khan, Tatsuya Takamoto, Mitsuru Imaizumi, Takeshi Ohshima, Hisayoshi Itoh

CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2　1826-+　2006
Study on optimum structure of AllnGaP top cell for triple-junction space solar cell Peer-reviewed

Chiharu Morioka, Mitsuri Imaizumi, Takeshi Ohshima, Hisayoshi Itoh, Koichi Kibe

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2　1846-1849　2006
Analysis of radiation response and recovery characteristics of amorphous silicon solar cells Peer-reviewed

Kazunori Shimazaki, Mitsuru Imaizumi, Takeshi Ohshima, Hisayoshi Itoh, Koichi Kibe

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2　1797-1800　2006
Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR Peer-reviewed

N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, T. Umeda, J. Isoya

Physical Review B　72　(23)　235208 (1-6)-235208　2005/12
Publisher: The American Physical Society
DOI： 10.1103/PhysRevB.72.235208 　

ISSN： 1098-0121
Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells Peer-reviewed

HS Lee, M Yamaguchi, NJ Ekins-Daukes, A Khan, T Takamoto, T Agui, K Kamimura, M Kaneiwa, M Imaizumi, T Ohshima, H Itoh

JOURNAL OF APPLIED PHYSICS　98　(9)　2005/11

DOI： 10.1063/1.2115095 　

ISSN： 0021-8979
Activity and current status of R&D on space solar cells in Japan Peer-reviewed

M. Imaizumi, S. Matsuda, S. Kawakita, T. Sumita, T. Takamoto, T. Ohshima, M. Yamaguchi

Progress in Photovoltaics: Research and Applications　13　(6)　529-543　2005/09

DOI： 10.1002/pip.644 　

ISSN： 1062-7995
Piezoelectric photothermal investigation of proton irradiation induced defects in CuInSe2 epitaxial films Peer-reviewed

Y. Akaki, N. Ohryoji, A. Fukuyama, K. Yoshino, S. Kawakita, M. Imaizumi, S. Niki, K. Sakurai, S. Ishizuka, T. Ohshima, T. Ikari

Thin Solid Films　480-481　250-253　2005/06/01

DOI： 10.1016/j.tsf.2004.11.028 　

ISSN： 0040-6090
EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC Peer-reviewed

T Umeda, Y Ishitsuka, J Isoya, NT Son, E Janzen, N Morishita, T Ohshima, H Itoh, A Gali

PHYSICAL REVIEW B　71　(19)　2005/05

DOI： 10.1103/PhysRevB.71.193202 　

ISSN： 1098-0121

eISSN： 1550-235X
Enhancement effect of Tb-related luminescence in AlxGa1-xN with the AlN molar fraction 0 <= x <= 1 Peer-reviewed

A Wakahara, Y Nakanishi, T Fujiwara, A Yoshida, T Ohshima, T Kamiya

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　202　(5)　863-867　2005/04

DOI： 10.1002/pssa.200461430 　

ISSN： 1862-6300

eISSN： 1862-6319
Radiation effect on pn-SiC diode as a detector Peer-reviewed

Akimasa Kinoshita, Motohiro Iwami, Ken-Ichi Kobayashi, Itsuo Nakano, Reisaburo Tanaka, Tomihiro Kamiya, Akihiko Ohi, Takeshi Ohshima, Yasutaka Fukushima

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment　541　(1-2)　213-220　2005/04/01

DOI： 10.1016/j.nima.2005.01.059 　

ISSN： 0168-9002
Characterization of charge generated in silicon carbide n(+) p diodes using transient ion beam-induced current Peer-reviewed

T Ohshima, T Satoh, M Oikawa, T Yamakawa, S Onoda, T Wakasa, JS Laird, T Hirao, T Kamiya, H Itoh, A Kinoshita, R Tanaka, Nakano, I, M Iwami, Y Fukushima

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT　541　(1-2)　236-240　2005/04

DOI： 10.1016/j.nima.2005.01.062 　

ISSN： 0168-9002
Analysis of flight demonstration results of an InGaP/GaAs dual- junction tandem solar cell

Mitsuru Imaizumi, Taishi Sumita, Shirou Kawakita, Takeshi Ohshima, Hisayoshi Ito, Saburo Kuwajima

Conference Record of the IEEE Photovoltaic Specialists Conference　563-566　2005

ISSN： 0160-8371
Energy-back-transfer process in rare-earth doped AlGaN Peer-reviewed

A Wakahara, T Fujiwara, H Okada, A Yoshida, T Ohshima, H Itho

RARE-EARTH DOPING FOR OPTOELECTRONIC APPLICATIONS　866　91-96　2005

ISSN： 0272-9172
Analysis of proton induced defects in Cu(In,Ga)Se2 thin-film solar cells Peer-reviewed

Shirou Kawakita, Mitsuru Imaizumi, Koichi Kibe, Shinichi Yoda, Takeshi Ohshima, Hisayoshi Itoh, Masafumi Yamaguchi

Materials Research Society Symposium Proceedings　865　2005
Publisher: Materials Research Society
DOI： 10.1557/PROC-865-F5.17 　

ISSN： 0272-9172
Evaluation of the electrical characteristics of III-V compounds solar cells irradiated with protons at low temperature Peer-reviewed

Takeshi Ohshima, Taishi Sumita, Mitsuru Imaizumi, Shirou Kawakita, Kazunori Shimazaki, Saburo Kuwajima, Akihiko Ohi, Hisayoshi Itoh

Conference Record of the IEEE Photovoltaic Specialists Conference　806-809　2005

DOI： 10.1109/PVSC.2005.1488255 　

ISSN： 0160-8371
Effects of electron irradiation on CuInS2 crystals Peer-reviewed

Kenichiro Abe, Yoshihiro Miyoshi, Atsushi Ashida, Kazuki Wakita, Takeshi Ohshima, Norio Morishita, Tomihiro Kamiya, Seiji Watase, Masanobu Izaki

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　44　(1 B)　718-721　2005/01

DOI： 10.1143/JJAP.44.718 　

ISSN： 0021-4922
Analysis of EOL prediction methodology for triple-junction solar cells in actual radiation environment Peer-reviewed

T Sumita, M Imaizumi, T Ohshima, H Itoh, S Kuwajima

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005　667-670　2005

ISSN： 0160-8371
EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC Peer-reviewed

T Umeda, J Isoya, N Morishita, T Ohshima, T Kamiya, A Gali, P Deak, NT Son, E Janzen

PHYSICAL REVIEW B　70　(23)　2004/12

DOI： 10.1103/PhysRevB.70.235212 　

ISSN： 1098-0121

eISSN： 1550-235X
Low-energy proton irradiation effects on GaAs/Si solar cell Peer-reviewed

Nallathambi Chandrasekaran, Tetsuo Soga, Yousuke Inuzuka, Hironori Taguchi, Mitsuru Imaizumi, Takeshi Ohshima, Takashi Jimbo

Japanese Journal of Applied Physics, Part 2: Letters　43　(10 A)　L1302-L1304　2004/10/01

DOI： 10.1143/JJAP.43.L1302 　

ISSN： 0021-4922
Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy Peer-reviewed

Yoji Akaki, Naoto Ohryoji, Kenji Yoshino, Shirou Kawakita, Mitsuru Imaizumi, Shigeru Niki, Keiichiro Sakurai, Shogo Ishizuka, Takeshi Ohshima, Tetsuo Ikari

Solid-State Electronics　48　(10-11)　1815-1818　2004/10

DOI： 10.1016/j.sse.2004.05.018 　

ISSN： 0038-1101
Strong blue emission from Er3+ doped in AlxGa1-xN International-journal International-coauthorship Peer-reviewed

A Wakahara, Y Nakanishi, T Fujiwara, H Okada, A Yoshida, T Ohshima, T Kamiya, YT Kim

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　201　(12)　2768-2772　2004/09

DOI： 10.1002/pssa.200405006 　

ISSN： 1862-6300

eISSN： 1862-6319
Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation Peer-reviewed

NJ Ekins-Daukes, HS Lee, T Sasaki, M Yamaguchi, A Khan, T Takamoto, T Agui, K Kamimura, M Kaneiwa, M Imaizumi, T Ohshima, T Kamiya

APPLIED PHYSICS LETTERS　85　(13)　2511-2513　2004/09

DOI： 10.1063/1.1794371 　

ISSN： 0003-6951
Effect of Al Composition on Luminescence Properties of Rare-Earth Implanted into AlGaN Peer-reviewed

Akira Yoshida, Akihiro Wakahara, Yasuo Nakanishi, Hiroshi Okada, Takeshi Ohshima, Hisayoshi Itoh, Young Tae Kim

Key Engineering Materials　270-273　890-894　2004/08
Publisher: Trans Tech Publications, Ltd.
DOI： 10.4028/www.scientific.net/kem.270-273.890 　

eISSN： 1662-9795
Proton-beam-induced defect levels in CuInSe2 thin-film absorbers: An investigation on nonradiative electron transitions Peer-reviewed

Y Akaki, K Yoshino, T Ikari, S Kawakita, M Imaizumi, S Niki, K Sakurai, S Ishizuka, T Ohshima

APPLIED PHYSICS LETTERS　85　(8)　1347-1349　2004/08

DOI： 10.1063/1.1784518 　

ISSN： 0003-6951
EPR identification of two types of carbon vacancies in 4H-SiC Peer-reviewed

T Umeda, J Isoya, N Morishita, T Ohshima, T Kamiya

PHYSICAL REVIEW B　69　(12)　2004/03

DOI： 10.1103/PhysRevB.69.121201 　

ISSN： 1098-0121
Relationship between the current direction in the inversion layer and the electrical characteristics of metal-oxide-semiconductor field effect transistors on 3C-SiC Peer-reviewed

T Ohshima, KK Lee, Y Ishida, K Kojima, Y Tanaka, T Takahashi, M Yoshikawa, H Okumura, K Arai, T Kamiya

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2　457-460　1405-1408　2004

ISSN： 0255-5476
EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC Peer-reviewed

T Umeda, Y Ishitsuka, J Isoya, N Morishita, T Ohshima, T Kamiya

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2　457-460　465-468　2004

ISSN： 0255-5476
Introduction of phosphorus atoms in silicon carbide using nuclear transmutation doping at elevated temperatures Peer-reviewed

T Ohshima, N Morishita, T Kamiya, J Isoya, S Baba, J Aihara, M Yamaji, M Ishihara

BASIC STUDIES IN THE FIELD OF HIGH-TEMPERATURE ENGINEERING　197-202　2004
Pulsed EPR studies of shallow donor impurities in SiC Peer-reviewed

J Isoya, T Ohshima, N Morishita, T Kamiya, H Itoh, S Yamasaki

PHYSICA B-CONDENSED MATTER　340　903-907　2003/12

DOI： 10.1016/j.physb.2003.09.097 　

ISSN： 0921-4526
Improvement of luminescence capability of Tb3+-related emission by AlxGa1-xN Peer-reviewed

Y Nakanishi, A Wakahara, H Okada, A Yoshida, T Ohshima, H Itoh

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS　240　(2)　372-375　2003/11

DOI： 10.1002/pssc.200303479 　

ISSN： 0370-1972

eISSN： 1521-3951
EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites Peer-reviewed

N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. Isoya

Physical Review B　68　(16)　165206 (1-11)-165206　2003/10
Publisher: The American Physical Society
DOI： 10.1103/PhysRevB.68.165206 　

ISSN： 1098-0121
Effects of high-energy proton irradiation on the density and hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films Peer-reviewed

Hae Seok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda

Physica Status Solidi (A) Applied Research　199　(3)　471-474　2003/10/01

DOI： 10.1002/pssa.200306669 　

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Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 × 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 × 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 × 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1 as proton energy was changed from 0.38 to 3 MeV.
Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films Peer-reviewed

H Okada, N Fujita, HS Lee, A Wakahara, A Yoshida, T Ohshima, H Itoh

JOURNAL OF ELECTRONIC MATERIALS　32　(9)　L5-L8　2003/09

DOI： 10.1007/s11664-003-0234-8 　

ISSN： 0361-5235
Observation of single-ion induced charge collection in diode by a heavy ion microbeam system Peer-reviewed

T Kamiya, M Oikawa, T Ohshima, T Hirao, KK Lee, S Onoda, JS Laird

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　210　206-210　2003/09

DOI： 10.1016/S0168-583X(03)01071-1 　

ISSN： 0168-583X
Evaluation of the characteristics of silicon carbide diodes using transient-IBIC technique Peer-reviewed

T Ohshima, KK Lee, S Onoda, T Kamiya, M Oikawa, JS Laird, T Hirao, H Itoh

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　210　201-205　2003/09

DOI： 10.1016/S0168-583X(03)01070-X 　

ISSN： 0168-583X
Radiation damage on 6H-SiC Schottky diodes Peer-reviewed

T Nishijima, SM Hearne, DN Jamieson, T Ohshima, KK Lee, H Itoh

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　210　196-200　2003/09

DOI： 10.1016/S0168-583X(03)01069-3 　

ISSN： 0168-583X
A comparative study of the radiation hardness of silicon carbide using light ions Peer-reviewed

KK Lee, T Ohshima, A Saint, T Kamiya, DN Jamieson, H Itoh

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　210　489-494　2003/09

DOI： 10.1016/S0168-583X(03)01096-6 　

ISSN： 0168-583X
The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide Peer-reviewed

T Ohshima, KK Lee, Y Ishida, K Kojima, Y Tanaka, T Takahashi, M Yoshikawa, H Okumura, K Arai, T Kamiya

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　42　(6B)　L625-L627　2003/06

DOI： 10.1143/JJAP.42.L625 　

ISSN： 0021-4922
Effects of implantation conditions on the luminescence properties of Eu-doped GaN Peer-reviewed

Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, H. Itoh, S. Nakao, K. Saito, Y. T. Kim

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　206　1033-1036　2003/05

DOI： 10.1016/S0168-583X(03)00928-5 　

ISSN： 0168-583X
Proton radiation analysis of multi junction space solar cells Peer-reviewed

T Sumita, M Imaizumi, S Matsuda, T Ohshima, A Ohi, H Itoh

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　206　448-451　2003/05

DOI： 10.1016/S0168-583X(03)00791-2 　

ISSN： 0168-583X
ESR characterization of activation of implanted phosphorus ions in silicon carbide Peer-reviewed

J Isoya, T Ohshima, A Ohi, N Morishita, H Itoh

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　206　965-968　2003/05

DOI： 10.1016/S0168-583X(03)00903-0 　

ISSN： 0168-583X
Observation of transient current induced in silicon carbide diodes by ion irradiation Peer-reviewed

T Ohshima, KK Lee, S Onoda, T Kamiya, M Oikawa, JS Laird, T Hirao, H Itoh

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS　206　979-983　2003/05

DOI： 10.1016/S0168-583X(03)00906-6 　

ISSN： 0168-583X
Performance of gamma irradiated p-channel 6H-SiC MOSFETs: High total dose Peer-reviewed

KK Lee, T Ohshima, H Itoh

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　50　(1)　194-200　2003/02

DOI： 10.1109/TNS.2002.807853 　

ISSN： 0018-9499
A pn-SiC diode as a radiation detector

Akimasa Kinoshita, Motohiro Iwami, Itsuo Nakano, Reisaburo Tanaka, Tomihiro Kamiya, Akihiko Ohi, Takeshi Ohshima, Yasutaka Fukushima

IEEE Nuclear Science Symposium Conference Record　2　1346-1350　2003
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/nssmic.2003.1351943 　

ISSN： 1095-7863
Study of radiation response on single-junction component sub-cells in triple-junction solar cells

Mitsuru Imaizumi, Tatsuya Takamoto, Taishi Sumita, Takeshi Ohshima, Masafumi Yamaguchi, Sumio Matsuda, Akihiko Ohi, Tomihiro Kamiya

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion　A　599-602　2003
Analysis of end-of-life performance for proton-irradiated triple-junction space solar cell

Taishi Sumita, Mitsuru Imaizumi, Sumio Matsuda, Takeshi Ohshima, Akihiko Ohi, Tomihiro Kamiya

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion　A　689-692　2003
Super radiation tolerance of CIGS solar cells demonstrated in space by MDS-1 satellite

Shirou Kawakita, Mitsuru Imaizumi, Taishi Sumita, Katsumi Kushiya, Takeshi Ohshima, Masafumi Yamaguchi, Sumio Matsuda, Shinichi Yoda, Tomihiro Kamiya

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion　A　693-696　2003
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Peer-reviewed

Ohshima, T., Uedono, A., Eryu, O., Lee, K.K., Abe, K., Itoh, H., Nakashima, K.

Materials Science Forum　433-436　633-636　2003
Publisher: Materials Science Forum
ISSN： 1662-9752
Improvement of Luminescence Capability of Tb3+-Related Emission by AlGaN International-journal Peer-reviewed

Yasuo Nakanishi, Akihiro Wakahara, Hiroshi Okada, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, T.Shibata, M.Tanaka

physica status solidi (b)　0　(7)　2623-2626　2003

DOI： 10.1002/pssb.200303479 　
Effects of Al composition on luminescence properties of europium implanted AlxGa1-xN (0 ≤ × ≤ 1) Peer-reviewed

Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, H. Itoh, T. Shibata, M. Tanaka

Physica Status Solidi C: Conferences　0　(7)　2623-2626　2003

DOI： 10.1002/pssc.200303440 　

ISSN： 1610-1634
Effect of Alloy Composition on Photoluminescence Properties of Europium Implanted AlGaInN Peer-reviewed

Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, H. Itoh

physica status solidi (c)　0　(1)　461-464　2003
Publisher: Wiley
DOI： 10.1002/pssc.200390088 　

ISSN： 1610-1634

eISSN： 1610-1642
Effect of Cl ion implantation on electrical properties of CuInSe2 thin films Peer-reviewed

T Tanaka, T Yamaguchi, T Ohshima, H Itoh, A Wakahara, A Yoshida

SOLAR ENERGY MATERIALS AND SOLAR CELLS　75　(1-2)　109-113　2003/01

DOI： 10.1016/S0927-0248(02)00115-0 　

ISSN： 0927-0248
Validation of SiC photodetectors response Peer-reviewed

Kin Kiong Lee, Jamie S. Laird, T. Ohshima, T. Kamiya

Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003　2003-　2003
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/NUSOD.2003.1263224 　
Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy Peer-reviewed

Y. Akaki, N. Ohryoji, K. Yoshino, S. Kawakita, M. Imaizumi, S. Niki, K. Sakurai, S. Ishizuka, T. Ohshima, T. Ikari

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings　460-461　2003
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/ISDRS.2003.1272189 　
Analysis of radiation effects in space for terrestrial solar cells on MDS-1 Peer-reviewed

T. Sumita, M. Imaizumi, S. Kawakita, S. Matsuda, S. Kuwajima, T. Ohshima, T. Kamiya

IEEE Radiation Effects Data Workshop　2003-　11-17　2003
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/REDW.2003.1281315 　
Strategies for improving radiation tolerance of Si space solar cells Peer-reviewed

A. Khan, M. Yamaguchi, Y. Ohshita, N. Dharmaraso, K. Araki, V. T. Khanh, H. Itoh, T. Ohshima, M. Imaizumi, S. Matsuda

Solar Energy Materials and Solar Cells　75　(1-2)　271-276　2003/01

DOI： 10.1016/S0927-0248(02)00169-1 　

ISSN： 0927-0248
Low-energy proton-induced defects in n(+)/p InGaP solar cells Peer-reviewed

N Dharmarasu, M Yamaguchi, A Khan, T Takamoto, T Ohshima, H Itoh, M Imaizumi, S Matsuda

SOLAR ENERGY MATERIALS AND SOLAR CELLS　75　(1-2)　327-333　2003/01

ISSN： 0927-0248
Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC Peer-reviewed

N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. Isoya

Physical Review B　66　235202-1-235202-12　2002/12

DOI： 10.1103/PhysRevB.66.235202 　
Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN Peer-reviewed

Y Nakanishi, A Wakahara, H Okada, A Yoshida, T Ohshima, H Itoh

APPLIED PHYSICS LETTERS　81　(11)　1943-1945　2002/09

DOI： 10.1063/1.1504873 　

ISSN： 0003-6951
Majority- and minority-carrier deep level traps in proton-irradiated n +/p-InGaP space solar cells Peer-reviewed

Nethaji Dharmarasu, Masafumi Yamaguchi, Jacques C. Bourgoin, Tatsuya Takamoto, Takeshi Ohshima, Hisayoshi Itoh, Mitsuru Imaizumi, Sumio Matsuda

Applied Physics Letters　81　(1)　64-66　2002/07/01

DOI： 10.1063/1.1491005 　

ISSN： 0003-6951
Annealing enhancement effect by light illumination on proton irradiated Cu(In,Ga)Se-2 thin-film solar cells Peer-reviewed

S Kawakita, M Imaizumi, M Yamaguchi, K Kushiya, T Ohshima, H Itoh, S Matsuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　41　(7A)　L797-L799　2002/07

DOI： 10.1143/JJAP.41.L797 　

ISSN： 0021-4922
Investigation of the radiation hardness on semiconductor devices using the ion micro-beam Peer-reviewed

T. Nishijima, T. Ohshima, K. K. Lee

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　190　(1-4)　329-334　2002/05

DOI： 10.1016/S0168-583X(01)01243-5 　

ISSN： 0168-583X
Effects of proton irradiation on n(+)p InGaP solar cells Peer-reviewed

N Dharmarasu, A Khan, M Yamaguchi, T Takamoto, T Ohshima, H Itoh, M Imaizumi, S Matsuda

JOURNAL OF APPLIED PHYSICS　91　(5)　3306-3311　2002/03

DOI： 10.1063/1.1445276 　

ISSN： 0021-8979
Radiation effects on high-efficiency InGaP/InGaAs/Ge triple-junction solar cells developed for terrestrial use

Mitsuru Imaizumi, Tatsuya Takamoto, Takeshi Ohshima, Masafumi Yamaguchi, Hisayoshi Itoh, Sumio Matsuda

Conference Record of the IEEE Photovoltaic Specialists Conference　990-993　2002

ISSN： 0160-8371
In-situ measurement of degradation of Cu(In,Ga)Se2 thin film solar cells during electron and proton irradiations

Shirou Kawakita, Mitsuru Imaizumi, Masafumi Yamaguchi, Katsumi Kushiya, Takeshi Ohshima, Hisayoshi Ito, Sumio Matsuda

Conference Record of the IEEE Photovoltaic Specialists Conference　978-981　2002

ISSN： 0160-8371
Annealing of a vacancy-type defect and diffusion of implanted boron in 6H-SiC Peer-reviewed

T Ohshima, A Uedono, O Eryu, KK Lee, K Abe, H Itoh, K Nakashima

SILICON CARBIDE AND RELATED MATERIALS - 2002　433-4　633-636　2002

ISSN： 0255-5476
Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum Peer-reviewed

A. Ohi, T. Ohshima, M. Yoshikawa, K. K. Lee, M. Iwami, H. Itoh

Materials Science Forum　389-393　831-834　2002
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/MSF.389-393.831 　

ISSN： 0255-5476
Effects of successive annealing of oxides on electrical characteristics of silicon carbide metal-oxide-semiconductor structures Peer-reviewed

M Yoshikawa, M Satoh, T Ohshima, H Itoh

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS　389-3　1009-1012　2002

ISSN： 0255-5476
Radiation response of p-channel 6H-SiC MOSFETs fabricated using pyrogenic conditions Peer-reviewed

KK Lee, T Ohshima, H Itoh

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS　389-3　1097-1100　2002

ISSN： 0255-5476
Gamma-ray irradiation effects on the electrical characteristics of 6H-SiC MOSFETs with annealed gate-oxide Peer-reviewed

T Ohshima, KK Lee, A Ohi, M Yoshikawa, H Itoh

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS　389-3　1093-1096　2002

ISSN： 0255-5476
Modelling of radiation response of p-channel SiC MOSFETs Peer-reviewed

KK Lee, T Ohshima, H Itoh

SILICON CARBIDE AND RELATED MATERIALS - 2002　433-4　761-764　2002

ISSN： 0255-5476
EPR Study of Single Silicon Bacancy-Related Defects in 4H-and 6H-SiC Peer-reviewed

N. Mizuochi, J. Isoya, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh

Material Science Forum　389-393　(2)　497-500　2002/01

DOI： 10.4028/www.scientific.net/MSF.389-393.497 　
Deep-level transient spectroscopy analysis of proton-irradiated n+/p InGaP solar cells Peer-reviewed

N. Dharmarasu, M. Yamaguchi, A. Khan, T. Takamoto, T. Ohshima, H. Itoh, M. Imaizumi, S. Matsuda

Physica B: Condensed Matter　308-310　1181-1184　2001/12

DOI： 10.1016/S0921-4526(01)00935-8 　

ISSN： 0921-4526
Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions Peer-reviewed

Takeshi Ohshima, Akira Uedono, Hiroshi Abe, Z. Q. Chen, Hisayoshi Itoh, Masahito Yoshikawa, Koji Abe, Osamu Eryu, Kenshiro Nakashima

Physica B: Condensed Matter　308-310　652-655　2001/12

DOI： 10.1016/S0921-4526(01)00780-3 　

ISSN： 0921-4526
High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells Peer-reviewed

Nethaji Dharmarasu, Masafumi Yamaguchi, Aurangzeb Khan, Takashi Yamada, Tatsuya Tanabe, Shigenori Takagishi, Tatsuya Takamoto, Takeshi Ohshima, Hisayoshi Itoh, Mitsuru Imaizumi, Sumio Matsuda

Applied Physics Letters　79　(15)　2399-2401　2001/10/08

DOI： 10.1063/1.1409270 　

ISSN： 0003-6951
Luminescence properties of Eu-implanted GaN for full color micro light-emitting diode array

A. Wakahara, Y. Nakanishi, T. Ohshima, H. Itoh

Journal of the Indian Institute of Science　81　(5)　579-583　2001/09

ISSN： 0970-4140
Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide Peer-reviewed

T Ohshima, H Itoh, M Yoshikawa

JOURNAL OF APPLIED PHYSICS　90　(6)　3038-3041　2001/09

ISSN： 0021-8979
Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells Peer-reviewed

Aurangzeb Khan, Masafumi Yamaguchi, Y. Ohshita, N. Dharmarasu, K. Araki, Takao Abe, Hisayoshi Itoh, T. Ohshima, M. Imaizumi, S. Matsuda

Journal of Applied Physics　90　(3)　1170-1178　2001/08/01

DOI： 10.1063/1.1384855 　

ISSN： 0021-8979
Ion beam induced charge gate rupture of oxide on 6H-SiC Peer-reviewed

K. K. Lee, T. Nishijima, T. Ohshima, D. N. Jamieson

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　181　(1-4)　324-328　2001/07

DOI： 10.1016/S0168-583X(01)00622-X 　

ISSN： 0168-583X
Radiation Resistant Low Bandgap InGaAsP Solar Cell for Multi-Junction Solar Cells.

Khan Aurangzeb, Yamaguchi Masafumi, Dharmaras Nathaji, Yamada Takashi, Tanabe Tatsuya, Takagishi Shigenori, Itoh Hisayoshi, Ohshima Takeshi, Imaizumi Mitsuru, Matsuda Sumio

Japanese Journal of Applied Physics　40　(7)　L728-L731　2001
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/jjap.40.L728 　

ISSN： 0021-4922

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We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95 eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n<FONT SIZE="-1">⁺</FONT>-p junction solar cells. An injection anneal activation energy (0.58 eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95 eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications.
Enhancement of electrical activation of aluminum accepters in 6H-SiC by co-implantation of carbon ions Peer-reviewed

T Ohshima, H Itoh, M Yoshikawa

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000　353-356　575-578　2001

ISSN： 0255-5476
Steam annealing effects on CV characteristics of MOS structures on (11(2)over-bar-0) face of 4H-SiC Peer-reviewed

M Yoshikawa, T Ohshima, H Itoh, K Takahashi, M Kitabatake

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000　353-356　635-638　2001

ISSN： 0255-5476
Impurity Doping into SiC Semiconductor by Means of Ion Implantation

ITOH Hisayoshi, OHSHIMA Takeshi

J. Surf. Sci. Soc. Jpn.　21　(12)　778-783　2000/12/10
Publisher: The Surface Science Society of Japan
DOI： 10.1380/jsssj.21.778 　

ISSN： 0388-5321

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Research and development of ion implantation technique for SiC semiconductor have been performed. Hot-implantation of P ions into 6H-SiC raises the electron concentration in P-implanted n-type layers, showing that the hot-implantation enhances the electrical activation of P donors. The hole concentration in Al ion implanted 6H-SiC is found to increase due to co-implantation of C ions. This fact demonstrates that the electrical properties of Al-implanted p-type layers are improved by the C co-implantation. Using the ion implantation methods, SiC-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been successfully fabricated. These results indicate that hot- and C co-implantations are quite useful for the fabrication of SiC devices.
Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation

T. Ohshima, K. Abe, H. Itoh, M. Yoshikawa, K. Kojima, I. Nashiyama, S. Okada

Applied Physics A: Materials Science and Processing　71　(2)　141-145　2000/08
Publisher: Springer-Verlag GmbH & Company KG
ISSN： 0947-8396
Effect of Mg ion implantation on electrical properties of CuInSe<inf>2</inf> thin films Peer-reviewed

Tooru Tanaka, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, Sohei Okada

Journal of Applied Physics　87　(7)　3283-3286　2000/04

DOI： 10.1063/1.372337 　

ISSN： 0021-8979
Photoluminescence properties of Eu-doped GaN by ion implantation Peer-reviewed

Y Nakanishi, A Wakahara, A Yoshida, T Ohshima, H Itoh, S Sakai

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS　1　486-489　2000
Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphorus ions Peer-reviewed

T Ohshima, A Uedono, H Itoh, M Yoshikawa, K Kojima, S Okada, Nashiyama, I, K Abe, S Tanigawa, T Frank, G Pensl

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2　338-3　857-860　2000

ISSN： 0255-5476
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams Peer-reviewed

Akira Uedono, Shoichiro Tanigawa, Takeshi Ohshima, Hisayoshi Itoh, Masahito Yoshikawa, Isamu Nashiyama, Thomas Frank, Gerhard Pensl, Ryoichi Suzuki, Toshiyuki Ohdaira, Tomohisa Mikado

Journal of Applied Physics　87　(9 I)　4119-4125　2000
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.373039 　

ISSN： 0021-8979
Effect of Electron Irradiation on Properties of CuInSe2 Thin Films Peer-reviewed

Tooru Tanaka, Takeshi Ohshima, Hisayoshi Itoh, Sohei Okada, Akihiro Wakahara, Akira Yoshida

JAPANESE JOURNAL OF APPLIED PHYSICS　39　(1)　192-193　2000

ISSN： 0021-4922

eISSN： 1347-4065
Effects of steam annealing on electrical characteristics of 3C-SiC metal-oxide-semiconductor structures Peer-reviewed

M Yoshikawa, K Kojima, T Ohshima, H Itoh, S Okada, Y Ishida

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2　338-3　1129-1132　2000

ISSN： 0255-5476
Characterization of Au Schottky contacts on p-type 3C-SiC grown by low pressure chemical vapor deposition Peer-reviewed

K Kojima, M Yoshikawa, T Ohshima, H Itoh, S Okada

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2　338-3　1239-1242　2000

ISSN： 0255-5476
Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs Peer-reviewed

T Ohshima, M Yoshikawa, H Itoh, K Kojima, S Okada, Nashiyama, I

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2　338-3　1299-1302　2000

ISSN： 0255-5476
Oxygen-related defects in O+-implanted 6H-SiC studied by a monoenergetic positron beam Peer-reviewed

Akira Uedono, Shoichiro Tanigawa, Takeshi Ohshima, Hisayoshi Itoh, Yasushi Aoki, Masahito Yoshikawa, Isamu Nashiyama

Journal of Applied Physics　86　(10)　5392-5398　1999/11/15
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.371536 　

ISSN： 0021-8979
γ-Ray irradiation effects on 6H-SiC MOSFET Peer-reviewed

Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Yasushi Aoki, Isamu Nashiyama

Materials Science and Engineering B: Solid-State Materials for Advanced Technology　61-62　480-484　1999/07/30
Publisher: Elsevier BV
DOI： 10.1016/S0921-5107(98)00560-1 　

ISSN： 0921-5107
Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines

Suzuki Ryoichi, Ohdaira Toshiyuki, Uedono Akira, Cho Yang, Yoshida Sadafumi, Ishida Yuuki, Ohshima Takeshi, Itoh Hisayoshi, Chiwaki Mitsukuni, Mikado Tomohisa, Yamazaki Tetsuo, Tanigawa Shoichiro

Jpn J Appl Phys　37　(8)　4636-4643　1998/08/15
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/JJAP.37.4636 　

ISSN： 0021-4922

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Positron re-emission properties were studied on moderator materials in order to improve the positron moderation system of electron-linac-based intense slow positron beamlines. The re-emitted positron fraction was measured on tungsten, SiC, GaN, SrTiO3, and hydrogen-terminated Si with a variable-energy pulsed positron beam. The results suggested that tungsten is the best material for the primary moderator of the positron beamlines while epitaxially grown n-type 6H–SiC is the best material for the secondary moderator. Defect characterization by monoenergetic positron beams and surface characterization by Auger electron spectroscopy were carried out to clarify the mechanism of tungsten moderator degradation induced by high-energy electron irradiation. The characterization experiments revealed that the degradation is due to both radiation-induced vacancy clusters and surface carbon impurities. For the restoration of degraded tungsten moderators, oxygen treatment at ∼900°C is effective. Furthermore, it was found that oxygen at the tungsten surface inhibits positronium formation; as a result, it can increase the positron re-emission fraction.
Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation

Ohshima Takeshi, Yoshikawa Masahito, Itoh Hisayoshi, Aoki Yasushi, Nashiyama Isamu

Jpn J Appl Phys　37　(8)　L1002-L1004　1998/08/15
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/JJAP.37.L1002 　

ISSN： 0021-4922

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Enhancement-type n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on 6H-SiC to investigate the influence of γ-ray irradiation on device characteristics. The net number of radiation-induced oxide-trapped charges and interface traps induced by γ-ray irradiation were ∼3×1012/cm2 and ∼5×1011/cm2 after 70 kGy irradiation, respectively. These were measured from changes in the subthreshold-current curve. On comparing the densities of oxide-trapped charges and interface traps produced by irradiation in 6H-SiC MOSFETs with those in Si MOSFETs, the 6H-SiC MOSFETs are found to have high radiation resistance.
ESR studies of defects in p-type 6H-SiC irradiated with 3MeV-electrons

D. Cha, H. Itoh, N. Morishita, A. Kawasuso, T. Ohshima, Y. Watanabe, J. Ko, K. Lee, I. Nashiyama

Materials Science Forum　264-268　(1)　615-618　1998
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/msf.264-268.615 　

ISSN： 1662-9752 0255-5476
Study of residual defects in ion-implanted and subsequently annealed 3C-SiC Peer-reviewed

Ohshima, T., Ishida, Y., Ohdaira, T., Itoh, H., Takahashi, T., Nashiyama, I., Yoshida, S., Uedono, A., Yoshikawa, M., Tanigawa, S., Mikado, T., Suzuki, R., Kozima, K., Okumura, H., Okada, S.

Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory　62　(10)　1998
Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation Peer-reviewed

Ohshima, T., Uedono, A., Itoh, H., Abe, K., Suzuki, R., Ohdaira, T., Aoki, Y., Yoshikawa, M., Mikado, T., Okumura, H., Yoshida, S., Tanigawa, S., Nashiyama, I.

Materials Science Forum　264-268　(PART 2)　745-748　1998
Publisher: Materials Science Forum
ISSN： 1662-9752
Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation Peer-reviewed

T Ohshima, A Uedono, H Itoh, K Abe, R Suzuki, T Ohdaira, Y Aoki, M Yoshikawa, T Mikado, H Okumura, S Yoshida, S Tanigawa, Nashiyama, I

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2　264-2　745-748　1998

ISSN： 0255-5476
Investigation of Vacancy-Type Defects in P+-Implanted 6H-SiC Using Monoenergetic Positron Beams.

Uedono Akira, Ohshima Takeshi, Itoh Hisayoshi, Suzuki Ryoichi, Ohdaira Toshiyuki, Tanigawa Shoichiro, Aoki Yasushi, Yoshikawa Masahito, Nashiyama Isamu, Mikado Tomohisa

Japanese Journal of Applied Physics　37　(5)　2422-2429　1998
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/JJAP.37.2422 　

ISSN： 0021-4922

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Vacancy-type defects and their annealing properties for 200 keV P⁺-implanted 6H-SiC were studied using monoenergetic positron beams. For the specimen with a dose of 1×10¹³/cm², the mean size of the open volume of defects was estimated to be close to that of divacancies. Based on the annealing behavior of the S parameter corresponding to the annihilation of positrons trapped by vacancy-type defects, the temperature range for the annealing of vacancy-type defects was divided into three stages. Annealing behavior in stages I (200-700^°C) and II (700-1000^°C) was identified as the agglomeration of defects due to migrations of monovacancies and vacancy complexes such as divacancies, respectively. In stage II, near the defect-free region, the agglomeration of defects was suppressed by recombination of vacancy-type defects and interstitials. Stage III (1000-1300^°C) was assigned to be the formation of extended defects and their recovery processes. The annealing behavior of the amorphous region introduced by ion implantation was also discussed.
Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation Peer-reviewed

T. Ohshima, A. Uedono, K. Abe, H. Itoh, Y. Aoki, M. Yoshikawa, S. Tanigawa, I. Nashiyama

Applied Physics A: Materials Science and Processing　67　(4)　407-412　1998
Publisher: Springer Verlag
DOI： 10.1007/s003390050794 　

ISSN： 0947-8396
Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance Peer-reviewed

A. Kawasuso, H. Itoh, N. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura, S. Yoshida

Applied Physics A: Materials Science and Processing　67　(2)　209-212　1998
Publisher: Springer Verlag
DOI： 10.1007/s003390050759 　

ISSN： 0947-8396
Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing Peer-reviewed

Hisayoshi Itoh, Takeshi Ohshima, Yasushi Aoki, Koji Abe, Masahito Yoshikawa, Isamu Nashiyama, Hajime Okumura, Sadafumi Yoshida, Akira Uedono, Shoichiro Tanigawa

Journal of Applied Physics　82　(11)　5339-5347　1997/12/01
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.366301 　

ISSN： 0021-8979
Formation of oxide-trapped charges in 6H-SiC MOS structures Peer-reviewed

Masahito Yoshikawa, Kazunari Saitoh, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Hajime Okumura, Sadafumi Yoshida

Radiation Physics and Chemistry　50　(5)　429-433　1997/11
Publisher: Elsevier Science Ltd
DOI： 10.1016/S0969-806X(97)00065-0 　

ISSN： 0969-806X
ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals Peer-reviewed

J. Isoya, H. Kanda, I. Sakaguchi, Y. Morita, T. Ohshima

Radiation Physics and Chemistry　50　(4)　321-330　1997/10
Publisher: Elsevier Science Ltd
DOI： 10.1016/S0969-806X(97)00070-4 　

ISSN： 0969-806X
Vacancy production by 3 MeV electron irradiation in 6H-SiC studied by positron lifetime spectroscopy Peer-reviewed

Atsuo Kawasuso, Hisayoshi Itoh, Takeshi Ohshima, Koji Abe, Sohei Okada

Journal of Applied Physics　82　(7)　3232-3238　1997/10/01
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.365630 　

ISSN： 0021-8979
Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations Peer-reviewed

Yousuke Morita, Takeshi Ohshima, Isamu Nashiyama, Yasunari Yamamoto, Osamu Kawasaki, Sumio Matsuda

Journal of Applied Physics　81　(9)　6491-6493　1997/05/01
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.364437 　

ISSN： 0021-8979
ESR studies of incorporation of phosphorus into high-pressure synthetic diamond

J. Isoya, H. Kanda, M. Akaishi, Y. Morita, T. Ohshima

Diamond and Related Materials　6　(2-4)　356-360　1997
Publisher: Elsevier BV
DOI： 10.1016/s0925-9635(96)00602-4 　

ISSN： 0925-9635
Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams.

Uedono Akira, Itoh Hisayoshi, Ohshima Takeshi, Suzuki Ryoichi, Ohdaira Toshiyuki, Tanigawa Shoichiro, Aoki Yasushi, Yoshikawa Masahito, Nashiyama Isamu, Mikado Tomohisa, Okumura Hajime, Yoshida Sadafumi

Japanese Journal of Applied Physics　36　(11)　6650-6660　1997
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/JJAP.36.6650 　

ISSN： 0021-4922

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Annealing properties of defects in N₂⁺- or Al⁺-implanted 3C-SiC were studied using monoenergetic positron beams. For as-implanted specimens, the mean size of the open volume of defects was estimated to be close to that of divacancies. Based on the annealing behavior of the characteristic value of the S parameter corresponding to the annihilation of positrons trapped by vacancy-type defects, the temperature range for the annealing of defects was divided into five stages, and they were arbitrarily designated as I-V. Annealing behavior in stages I (20-500^° C), II (500-800^° C) and III (800-1000^° C) was identified as the agglomeration of vacancy-type defects due to migrations of carbon vacancies, Si vacancies and vacancy complexes such as divacancies, respectively. Stages IV (1000-1200^° C) and V (1200-1400^° C) were assigned to be the formation of extended defects and their recovery processes, respectively. Effects of the species of the implanted ions and the substrate temperature during ion implantation on annealing properties of defects are also discussed.
Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions Peer-reviewed

Hisayoshi Itoh, Akira Uedono, Takeshi Ohshima, Yasushi Aoki, Masahito Yoshikawa, Isamu Nashiyama, Shoichiro Tanigawa, Hajime Okumura, Sadafumi Yoshida

Applied Physics A: Materials Science and Processing　65　(3)　315-323　1997
Publisher: Springer Verlag
DOI： 10.1007/s003390050585 　

ISSN： 0947-8396
Defects in Ion-Implanted 3C–SiC Probed by a Monoenergetic Positron Beam

Uedono Akira, Itoh Hisayoshi, Ohshima Takeshi, Aoki Yasushi, Yoshikawa Masahito, Nashiyama Isamu, Okumura Hajime, Yoshida Sadafumi, Moriya Tsuyoshi, Kawano Takao, Tanigawa Shoichiro

Jpn J Appl Phys　35　(12)　5986-5990　1996/12/15
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/JJAP.35.5986 　

ISSN： 0021-4922

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Defects introduced by 200-keV N2+- or Al+-implantation into 3C–SiC were probed by a monoenergetic positron beam. Depth profiles of the defects were determined from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. For ion implanted specimens at high substrate temperature (≥800° C), the major species of defects was identified to be vacancy clusters. The depth profile of vacancy-type defects was found to be shifted towards the surface of the specimen by implantation at high temperatures. Upon furnace annealing after the implantation, an agglomeration of vacancy-type defects was observed, and interstitial clusters were introduced below the vacancy-rich region.
Mechanism of anomalous degradation of silicon solar cells subjected to high-fluence irradiation

T Ohshima, Y Morita, Nashiyama, I, O Kawasaki, T Hisamatsu, T Nakao, Y Wakow, S Matsuda

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　43　(6)　2990-2997　1996/12

DOI： 10.1109/23.556896 　

ISSN： 0018-9499
Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures Peer-reviewed

M. Yoshikawa, K. Saitoh, T. Ohshima, H. Itoh, I. Nashiyama, S. Yoshida, H. Okumura, Y. Takahashi, K. Ohnishi

Journal of Applied Physics　80　(1)　282-287　1996/07/01
Publisher: American Institute of Physics Inc.
DOI： 10.1063/1.362817 　

ISSN： 0021-8979
PROPOSAL OF MONOCHROMATIC ELECTRON-BEAM SOURCE USING RESONANT-TUNNELING EFFECT Peer-reviewed

T OHSHIMA, M OKAMOTO, K KURODA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　34　(10B)　L1390-L1391　1995/10

ISSN： 0021-4922

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Misc. 235

Electron Irradiation NV Center Formation on Nano-Diamonds for Quantum Biosensors: Part 3

阿部浩之, 神長輝一, 佐伯誠一, 五十嵐龍治, 長田健介, 大島武, 大島武

応用物理学会学術講演会講演予稿集(CD-ROM)　86th　2025

ISSN： 2436-7613
細胞内温度計測の高感度化に向けた新規ナノ量子センサー作成法の開発

鈴木智達, 鈴木智達, 氏家里紗, KIT So Tze, 柳瑶美, 柳瑶美, 神長輝一, 阿部浩之, 小野田忍, 大島武, 五十嵐龍治, 五十嵐龍治, 五十嵐龍治

日本分子生物学会年会プログラム・要旨集(Web)　48th　2025
ナノ量子センサーを用いた細胞周期依存的な細胞内温度変化の解明に向けて

神長輝一, 神長輝一, 氏家里紗, 鈴木智達, 鈴木智達, 鈴木啓司, 阿部浩之, 大島武, 小野田忍, 五十嵐龍治, 五十嵐龍治, 五十嵐龍治

日本分子生物学会年会プログラム・要旨集(Web)　48th　2025
蛍光ナノダイヤモンドを用いたX線照射後の細胞内温度変化の計測と細胞周期依存性の解析

氏家里紗, 神長輝一, 鈴木智達, 柳原啓美, 鈴木啓司, 阿部浩之, 大島武, 五十嵐龍治

日本分子生物学会年会プログラム・要旨集(Web)　48th　2025
Dependence of SiC-silicon vacancy charge state stability on doping conditions

山崎雄一, 明石遼介, 花輪雅史, 村田晃一, 佐藤真一郎, 宮脇信正, 圓谷志郎, 増山雄太, 松下雄一郎, 松下雄一郎, 土田秀一, 好田誠, 好田誠, 大島武, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　71st　2024

ISSN： 2758-4704
ODMR characteristics of silicon vacancies in isotopically purified 4H-SiC

山城宏育, 山城宏育, 佐藤真一郎, 村田晃一, 花輪雅史, ZHANG S., ZHANG S., 山崎雄一, 土田秀一, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　71st　2024

ISSN： 2758-4704
Quantitatively charge-state-stability analysis of silicon vacancies in SiC

山崎雄一, 明石遼介, 花輪雅史, 村田晃一, 佐藤真一郎, 宮脇信正, 圓谷志郎, 増山雄太, 西谷侑将, 西谷侑将, 松下雄一郎, 松下雄一郎, 松下雄一郎, 土田秀一, 好田誠, 好田誠, 大島武, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　85th　2024

ISSN： 2758-4704
Effects of decoherence on the sensitivity of quantum sensor based on entangled NV pair.

木村晃介, 木村晃介, 小野田忍, 小野田忍, 大門俊介, 加田渉, 寺地徳之, 寺地徳之, 磯谷順一, 蓮沼倫弥, 新谷一騎, 川崎愛理, 花泉修, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　85th　2024

ISSN： 2758-4704
Evaluation of clinical dose distribution in heavy ion cancer therapy field by using a diamond membrane detector

加田渉, 松本卓己, 青木勝海, 小黒翼, 大塚勇輝, 武居秀行, WEISS Christina, WEISS Christina, GRIESMAYER Erich, GRIESMAYER Erich, 米内俊祐, 牧野高紘, 大島武, 酒井真理, 松村彰彦

応用物理学会春季学術講演会講演予稿集(CD-ROM)　71st　2024

ISSN： 2758-4704
Electron Irradiation NV Center Formation on Nano-Diamonds for Quantum Biosensors: Part 2

阿部浩之, 阿部浩之, 神長輝一, 五十嵐龍治, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　85th　2024

ISSN： 2758-4704
蛍光ナノダイヤモンドを使用した細胞内温度変化メカニズムの解明

氏家里紗, 神長輝一, 鈴木智達, 柳原啓美, 鈴木啓司, 阿部浩之, 大島武, 五十嵐龍治

日本分子生物学会年会プログラム・要旨集(Web)　47th　2024
ナノ量子センサーを用いた放射線被ばくが誘発する細胞内温度変化の解明に向けて

神長輝一, 氏家里紗, 鈴木智達, 鈴木智達, 鈴木啓司, 阿部浩之, 大島武, 五十嵐龍治, 五十嵐龍治, 五十嵐龍治

日本分子生物学会年会プログラム・要旨集(Web)　47th　2024
生体ナノ量子センサを用いた脳卒中マウスでの免疫細胞の多様な機能変化の可視化

高田彩加, 高橋真奈美, 半田真理子, 吉岡正揮, 神長輝一, 増山雄太, 鈴木智達, 阿部浩之, 大島武, 五十嵐龍治, 田桑弘之

バイオイメージング　33　(2)　2024

ISSN： 1342-2634
Prototyping of all-optical magnetic sensor using Si vacancies in SiC

針井一哉, 佐藤真一郎, 山崎雄一, 秋葉圭一郎, 増山雄太, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

ISSN： 2758-4704
Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

ZHANG S., ZHANG S., 佐藤真一郎, ZHANG Q., ZHANG Q., 元木秀, 元木秀, 村田晃一, 花輪雅史, 土田秀一, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　70th　2023

ISSN： 2758-4704
Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

ZHANG Q., ZHANG Q., 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 元木秀, ZHANG S., ZHANG S., 土田秀一, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　70th　2023

ISSN： 2758-4704
Evaluation of Cell cycle-dependent intracellular temperature changes

神長輝一, 氏家里紗, 鈴木智達, 鈴木智達, 鈴木啓司, 阿部浩之, 阿部浩之, 大島武, 大島武, 五十嵐龍治, 五十嵐龍治

日本分子生物学会年会プログラム・要旨集(Web)　46th　2023
生体ナノ量子センサを用いたマウス脳内の免疫細胞の代謝機能評価系の構築

高橋真奈美, 神長輝一, 増山雄太, 鈴木智達, 漆畑拓弥, 阿部浩之, 大島武, 須原哲也, 田桑弘之, 五十嵐龍治

脳循環代謝(Web)　35　(1)　2023

ISSN： 2188-7519
Electron Irradiation NV Center Formation on Nano-Diamonds for Quantum Biosensors

阿部浩之, 佐伯誠一, 神長輝一, 五十嵐龍治, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

ISSN： 2758-4704
Measurement of linear energy deposition distribution of clinical carbon beam therapy field by thin SiC membrane detector

松本卓己, 新井優大, 新井優大, 窪寺敬, 山口皐平, 横田凌, 大島武, 牧野高紘, 酒井真理, 松村彰彦, 星乃紀博, 土田秀一, 加田渉

応用物理学会春季学術講演会講演予稿集(CD-ROM)　70th　2023

ISSN： 2436-7613
Development of a diamond membrane detector dedicated to linear energy deposition distribution measurement in the clinical carbon beam therapy field

松本卓己, 新井優大, 新井優大, 清水省后, 窪寺敬, 青木勝海, 武井秀行, 牧野高紘, 米内俊祐, 大島武, 酒井真理, 松村彰彦, 加田渉

応用物理学会春季学術講演会講演予稿集(CD-ROM)　70th　2023

ISSN： 2436-7613
Evaluation of Annealing Time Dependence for Efficient Creation of Group IV-V Center

馬場智也, 馬場智也, 小野田忍, 小野田忍, 木村晃介, 木村晃介, 加田渉, 谷口尚, 宮川仁, 大島武, 花泉修

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

ISSN： 2758-4704
Generation of Entanglement State between NV Center Pair Created by Molecular Ion Implantation

木村晃介, 木村晃介, 小野田忍, 小野田忍, 加田渉, 寺地徳之, 寺地徳之, 磯谷順一, 馬場智也, 馬場智也, 後藤政哉, 後藤政哉, 花泉修, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

ISSN： 2758-4704
Formation of Silicon Vacancies in 4H-SiC by High Energy Electron Irradiation

元木秀, 元木秀, 佐藤真一郎, 佐伯誠一, 村田晃一, 増山雄太, 山崎雄一, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　83rd　2022

ISSN： 2758-4704
Quantitation of the concentration of silicon vacancies in 4H-SiC formed by electron beam irradiation

元木秀, 元木秀, 佐藤真一郎, 佐伯誠一, 増山雄太, 山崎雄一, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　69th　2022

ISSN： 2758-4704
Optical polarization characteristics of nitrogen-vacancy centers in 4H-SiC

松下大記, 佐藤真一郎, 大島武, 土方泰斗

応用物理学会春季学術講演会講演予稿集(CD-ROM)　69th　2022

ISSN： 2758-4704
Measurement of dose distribution of clinical carbon beam through radiation-induced current induced in 4H SiC Schottky Barrier Diode

新井優大, 新井優大, 窪寺敬, 山口皐平, 横田凌, 松本卓己, 大島武, 牧野高紘, 酒井真理, 松村彰彦, 加田渉, 星乃紀博, 土田秀一

応用物理学会春季学術講演会講演予稿集(CD-ROM)　69th　2022

ISSN： 2436-7613
Effect of Nitrogen Doping on Electron Spin Properties of NV Centers

木村晃介, 木村晃介, 小野田忍, SAILER Roberto, JOAS Timo, SAID Ressa, 山田圭介, 加田渉, 寺地徳之, 磯谷順一, 小菅臨, 小菅臨, 馬場智也, 馬場智也, JELEZKO Fedor, 花泉修, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　83rd　2022

ISSN： 2758-4704
Development of thin SiC radiation detector for precise linear energy deposition measurement of ionized particles

新井優大, 新井優大, 窪寺敬, 山口皐平, 横田凌, 松本卓己, 大島武, 牧野高紘, 酒井真理, 松村彰彦, 星乃紀博, 土田秀一, 加田渉

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　83rd　2022

ISSN： 2758-4704
Creation and Observation of Multiple-NV Centers in Diamond by Phthalocyanine Ion Beam Implantation

木村晃介, 加田渉, 花泉修, 小野田忍, 山田圭介, 大島武, 寺地徳之, 磯谷順一

放射線化学(Web)　(114)　2022

ISSN： 2188-0115
Bio-magnetic field measurement with nitrogen vacancy centres in diamond

桑波田晃弘, 桑波田晃弘, 荒井慧悟, 荒井慧悟, 西谷大祐, 藤崎伊久哉, 松木亮磨, 西尾有輝, XIN Zonghao, CAO Xinyu, 波多野雄治, 小野田忍, 真栄力, 宮川仁, 谷口尚, 山崎正俊, 寺地徳之, 大島武, 波多野睦子, 波多野睦子, 関野正樹, 岩崎孝之

日本生体磁気学会誌　35　(1)　2022

ISSN： 0915-0374
Coherence Time Evaluation of NV Centers Created by Phthalocyanine Ion Implantation

木村晃介, 木村晃介, 小野田忍, 小野田忍, SAILER Roberto, LANG Johannes, FINDLER Christoph, 山田圭介, 加田渉, 寺地徳之, 磯谷順一, JELEZKO Fedor, 花泉修, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　69th　2022

ISSN： 2436-7613
ダイヤモンドNVセンタを用いた心磁図

桑波田晃弘, 桑波田晃弘, 荒井慧悟, 西谷大祐, 藤崎伊久哉, 松木亮磨, 西尾有輝, 辛宗浩, 曹馨雨, 波多野雄治, 小野田忍, 眞榮力, 宮川仁, 谷口尚, 山崎正俊, 山崎正俊, 寺地徳之, 大島武, 波多野睦子, 関野正樹, 岩崎孝之

日本生体医工学会大会プログラム・抄録集(Web)　61st　2022
Fluorescent Silicon Carbide Nanoparticles

Mitchell O. de Vries, Shin-ichiro Sato, Takeshi Ohshima, Brant C. Gibson, Jean-Marie Bluet, Stefania Castelletto, Brett C. Johnson, Philipp Reineck

Advanced Optical Materials　9　(20)　2021/10/01
Publisher: John Wiley and Sons Inc
DOI： 10.1002/adom.202100311 　

ISSN： 2195-1071
Silicon carbide diodes for neutron detection

José Coutinho, Vitor J.B. Torres, Ivana Capan, Tomislav Brodar, Zoran Ereš, Robert Bernat, Vladimir Radulović, Klemen Ambrožič, Luka Snoj, Željko Pastuović, Adam Sarbutt, Takeshi Ohshima, Yuichi Yamazaki, Takahiro Makino

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment　986　2021/01/11
Publisher: Elsevier B.V.
DOI： 10.1016/j.nima.2020.164793 　

ISSN： 0168-9002
Influence of impurities on semi-insulating characteristics of V doped 4H-SiC epi layers

児島一聡, 佐藤真一郎, 大島武, 黒木伸一郎, 山口浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　82nd　2021

ISSN： 2758-4704
Nanoscale Thermometry Based on Photoluminescence from Praseodymium Ions in Gallium Nitride Semiconductor

佐藤真一郎, 佐藤真一郎, 出来真斗, 西村智朗, 渡邉浩崇, 新田州吾, 本田善央, 天野浩, GREENTREE Andrew D., GIBSON Brant C., 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　82nd　2021

ISSN： 2758-4704
Optically detected magnetic resonance spectra of silicon vacancies in 4H-SiC with different temperatures

元木秀, 元木秀, 佐藤真一郎, 増山雄太, 山崎雄一, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　82nd　2021

ISSN： 2758-4704
Measurement of current-induced magnetic fields in SiC devices by silicon vacancy quantum sensor

山崎雄一, 増山雄太, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 児島一聡, 土田秀一, 星乃紀博, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　82nd　2021

ISSN： 2758-4704
Quantum state measurement of nitrogen vacancy center in SiC crystal

若林健, 冨高祐哉, 楢原拓真, 楢原拓真, 佐藤真一郎, 児島一聡, 大島武, 土方泰斗

応用物理学会春季学術講演会講演予稿集(CD-ROM)　68th　2021

ISSN： 2758-4704
Numerical optimization and evaluation of a grating coupler on diamond NV bulk substrate

高橋哲, 勝見亮太, 飛沢健, 佐藤匠, 桑波田晃弘, 五十嵐龍治, 大島武, 増山雄太, 岩崎孝之, 波多野雄治, 波多野睦子, 牧野俊晴, 山崎聡, JELEZKO Fedor, 関野正樹, 八井崇

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　82nd　2021

ISSN： 2758-4704
Research of broadband microwave antenna for uniform manipulation of NV sensor

竹村祐輝, 林寛, 小野田忍, 阿部浩之, 大島武, 谷口尚, 藤原正規, 森下弘樹, 大木出, 水落憲和

応用物理学会春季学術講演会講演予稿集(CD-ROM)　68th　2021

ISSN： 2436-7613
Development of SiC semiconductor-based dosimeter for the evaluation of relative biological effectiveness distribution in the clinical carbon therapy field

山口皐平, 窪寺敬, 柳澤理央, 横田凌, 酒井真理, 松村彰彦, 牧野高紘, 大島武, 加田渉

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　82nd　2021
Crossed broadband coplanar-waveguide circuits for extension of the spin dephasing time T₂^* of NV-center ensembles in bulk diamonds

関口武治, 上坪優希, 増山雄太, 谷口尚, 宮川仁, 真栄力, 小野田忍, 佐伯誠一, 石井秀弥, 寺地徳之, 大島武, 岩崎孝之, 波多野睦子, 波多野睦子

応用物理学会春季学術講演会講演予稿集(CD-ROM)　68th　2021
Magnetocardiography using a solid-state quantum sensor

荒井慧悟, 荒井慧悟, 桑波田晃弘, 桑波田晃弘, 西谷大祐, 藤崎伊久哉, 松木亮磨, 西尾有輝, XIN Zonghao, CAO Xinyu, 波多野雄治, 小野田忍, 真栄力, 宮川仁, 谷口尚, 山崎正俊, 山崎正俊, 寺地徳之, 大島武, 波多野睦子, 波多野睦子, 関野正樹, 岩崎孝之

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　82nd　2021
Development of a magnetic probe using diamond quantum sensor for intraoperative sentinel lymph node biopsy

2020　(16)　47-52　2020/03/19
Publisher: 電気学会
Experimental and theoretical analysis of noise strength and environmental correlation time of ensembles of nitrogen vacancy centers in diamond

林寛, 松崎雄一郎, 芦田貴紀, 小野田忍, 阿部浩之, 大島武, 波多野睦子, 谷口尚, 森下弘樹, 藤原正規, 水落憲和

応用物理学会春季学術講演会講演予稿集(CD-ROM)　67th　2020

ISSN： 2758-4704
Luminescence Enhancement of Implanted Pr in GaN Nanopillars at Room Temperature

佐藤真一郎, 佐藤真一郎, 出来真斗, LI Shuo, 渡邉浩崇, 新田州吾, 本田善央, 西村智朗, GIBSON Brant C., GREENTREE Andrew D., 天野浩, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　67th　2020

ISSN： 2758-4704
¹³C pulsed-DNP using pentacene or NV-centers in diamond at room temperature

宮西孝一郎, SEGAWA Takuya F., SEGAWA Takuya F., 大木出, 小野田忍, 大島武, 阿部浩之, 高島秀聡, 竹内繁樹, 武田和行, SO FREDERICK T.-K., SO FREDERICK T.-K., SO FREDERICK T.-K., 寺田大紀, 寺田大紀, 五十嵐龍治, 五十嵐龍治, 香川晃徳, 香川晃徳, 香川晃徳, 北川勝浩, 北川勝浩, 水落憲和, 白川昌宏, 白川昌宏, 根来誠, 根来誠

Abstracts. Annual Meeting of the NMR Society of Japan　59th　2020
Fabrication of and Investigation on Grating coupler for the Improvement of Light Extraction Efficiency of Magnetometer with Nitrogen-Vacancy Center in Diamond

佐藤匠, 北泉隆裕, 齋地康太, 桑波田晃弘, 五十嵐龍治, 大島武, 増山雄太, 増山雄太, 岩崎孝之, 波多野睦子, 牧野俊晴, 山崎聡, JELEZKO Fedor, 日下部守昭, 日下部守昭, 関野正樹, 八井崇

応用物理学会春季学術講演会講演予稿集(CD-ROM)　67th　2020
Influence of P1 Concentration on NV Center Formation by Electron Irradiation

小野田忍, 佐伯誠一, 増山雄太, 石井秀弥, 宮川仁, 谷口尚, 渡邊賢司, 寺地徳之, 上坪優希, 関口武治, 波多野睦子, 波多野睦子, 磯谷順一, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　67th　2020
Development of Quantum Sensor Using Wide Bandgap Semiconductor

小野田忍, 大島武, 磯谷順一, 寺地徳之, 川原田洋, 谷井孝至, 加田渉, 波多野睦子, 波多野睦子

電気学会研究会資料　(EDD-20-036-044)　2020
Creation of NV Center by C₅N₅H₅ Ion Implantation

木村晃介, 木村晃介, 樋口泰成, 樋口泰成, 小野田忍, 加田渉, 薗田隆弘, 川原田洋, 渡邊幸志, 磯谷順一, 花泉修, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　67th　2020
Self-align fabrication of nano-reservoirs with NV centers in diamond for high-resolution nano-NMR

齋藤悠太, 石井邑, 川勝一斗, 永岡希朗, 畑雄貴, 中村洸介, 榎田尊昭, XU H., 薗田隆弘, 立石哲也, 金久京太郎, 寺地徳之, 小野田忍, 樋口泰成, 樋口泰成, 山田圭介, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

応用物理学会春季学術講演会講演予稿集(CD-ROM)　67th　2020
Improvement of nitrogen-enriched implantation for creation of multi-qubits composed of NV centers

木村晃介, 木村晃介, 小野田忍, 山田圭介, 加田渉, 川原田洋, 渡邊幸志, 磯谷順一, 花泉修, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　81st　2020
4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響

楢原拓真, 楢原拓真, 佐藤真一郎, 児島一聡, 山崎雄一, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　80th　2019

ISSN： 2758-4704
SiCデバイス内の3次元配列シリコン空孔を用いた光検出磁場共鳴測定

山崎雄一, 千葉陽史, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　80th　2019

ISSN： 2758-4704
SiC結晶中シリコン空孔のODMR信号に熱処理温度が及ぼす影響

千葉陽史, 千葉陽史, 山崎雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　80th　2019

ISSN： 2758-4704
4H-SiC中の窒素・空孔複合欠陥の形成におけるイオンビーム照射の影響

楢原拓真, 楢原拓真, 佐藤真一郎, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　2019

ISSN： 2758-4704
γ線照射が炭化ケイ素表面発光中心の生成・発光特性に与える影響

山崎雄一, 常見大貴, 常見大貴, 佐藤真一郎, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　2019

ISSN： 2758-4704
Investigation on light extraction efficiency in magnetometer with Nitrogen-Vacancy center in diamond by grating coupler

佐藤匠, 北泉隆裕, 齋地康太, 桑波田晃弘, 五十嵐龍治, 大島武, 増山雄太, 増山雄太, 岩崎孝之, 波多野睦子, JELEZKO Fedor, 日下部守昭, 日下部守昭, 関野正樹, 八井崇

Optics & Photonics Japan講演予稿集(CD-ROM)　2019　2019
ナノダイヤモンド中のNVセンター形成のための欠陥エンジニアリング

阿部浩之, 長田健介, 武山昭憲, 寺田大紀, 長谷川伸, 吉村公男, 小野田忍, 樋口泰成, 樋口泰成, 加田渉, 花泉修, 白川昌宏, 青木伊知男, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　2019
ダイヤモンド中単一NVセンターのパルス光磁気共鳴測定のためのローエンドFPGAへのフォトンカウンタの実装

永岡希朗, 畑雄貴, 川勝一斗, 石井邑, 福田諒介, 寺地徳之, 小野田忍, 大島武, 品田高宏, 川原田洋, 磯谷順一, 谷井孝至

応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　2019
イオン注入による単一不純物欠陥の規則的配列形成とその応用-ダイヤモンド中浅い単一NVセンターの配列形成-

谷井孝至, 品田高宏, 寺地徳之, 小野田忍, 大島武, MCGUINNESS Liam P., JELEZKO Fedor, LIU Yan, WU E, 加田渉, 花泉修, 川原田洋, 磯谷順一

応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　2019
C₅N₄H_nイオン注入による双極子結合したNVセンターの形成

春山盛善, 春山盛善, 小野田忍, 樋口泰成, 樋口泰成, 加田渉, 千葉敦也, 平野貴美, 寺地徳之, 五十嵐龍治, 河合空, 川原田洋, 石井邑, 石井邑, 福田諒介, 福田諒介, 谷井孝至, 磯谷順一, 大島武, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　2019
高温高圧処理によるNVセンター形成効率

樋口泰成, 樋口泰成, 小野田忍, 齋藤寛之, 西原遊, 加田渉, 大島武, 花泉修

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　80th　2019
High efficiency and radiation resistant InGaP/GaAs//CIGS stacked solar cells for space applications

Shirou Kawakita, Mitsuru Imaizumi, Kikuo Makita, Jiro Nishinaga, Takeyoshi Sugaya, Hajime Shibata, Shin Ichiro Sato, Takeshi Ohshima

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017　1-4　2018/05/25

DOI： 10.1109/PVSC.2017.8366599 　
SiC p⁺nn⁺ダイオード中の単一光子源の発光特性に関する考察

常見大貴, 常見大貴, 佐藤真一郎, 山崎雄一, 牧野高紘, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　79th　2018

ISSN： 2758-4704
プロトンビーム描画を用いてSiCデバイス中に作製したシリコン空孔のODMR測定

千葉陽史, 千葉陽史, 山崎雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 児島一聡, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　79th　2018

ISSN： 2758-4704
プロトンビーム描画プロセスがSiC pnダイオード中に導入したシリコン空孔の光学特性に与える影響

山崎雄一, 千葉陽史, 千葉陽史, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, LEE S.-Y., 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　79th　2018

ISSN： 2758-4704
プロトンビーム描画を用いたSiC pinダイオード中への発光中心の形成

千葉陽史, 千葉陽史, 常見大貴, 常見大貴, 本多智也, 本多智也, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　65th　2018

ISSN： 2758-4704
窒化ガリウム半導体に高温イオン注入したプラセオジム(Pr)の発光観測

佐藤真一郎, 出来真斗, 中村徹, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　65th　2018

ISSN： 2758-4704
浅い単一NVセンターの規則配列を用いたナノNMRのスピンノイズ解析

石井邑, 福田諒介, BALASUBRAMANIAN Priyadharshini, 東又格, 永岡希朗, 河合空, 薗田隆弘, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 稲葉優文, 山野颯, STUERNER Felix M., SCHMITT Simon, MCGUINNESS Liam P., JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　79th　2018
Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

Yuichi Yamazaki, Yoji Chiba, Yoji Chiba, Takahiro Makino, Shin Ichiro Sato, Naoto Yamada, Takahiro Satoh, Yasuto Hijikata, Kazutoshi Kojima, Sang Yun Lee, Takeshi Ohshima

Journal of Materials Research　2018/01/01

DOI： 10.1557/jmr.2018.302 　

ISSN： 0884-2914
Deep level defects in 4H-SiC epitaxial layers

Ivana Capan, Tomislav Brodar, Takeshi Ohshima, Shin Ichiro Sato, Takahiro Makino, Željko Pastuović, Rainer Siegele, Luka Snoj, Vladimir Radulović, José Coutinho, Vitor J.B. Torres, Kamel Demmouche

Materials Science Forum　924 MSF　225-228　2018/01/01

DOI： 10.4028/www.scientific.net/MSF.924.225 　

ISSN： 0255-5476
Observation of AlGaN/GaN HEMT by ultra-high voltage electron microscopy

日坂隆行, 佐々木肇, 門岩薫, 石村栄太郎, 小野田忍, 大島武

大阪大学超高圧電子顕微鏡センター年報　(47)　25-28　2018
Publisher: 大阪大学超高圧電子顕微鏡センター
Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime

Željko Pastuović, Rainer Siegele, Ivana Capan, Tomislav Brodar, Shin Ichiro Sato, Takeshi Ohshima

Journal of Physics Condensed Matter　29　2017/11/02

DOI： 10.1088/1361-648X/aa908c 　

ISSN： 0953-8984
Fluorescence nuclear track detection for charged particle using single crystalline diamond

春山盛善, 加藤実咲, 加田渉, 花泉修, 小野田忍, 大島武, 寺地徳之, 磯谷順一

放射線化学(Web)　104　(104)　23‐28 (WEB ONLY)　2017/10/31
Publisher: 日本放射線化学会
DOI： 10.32157/jsrc.104.0_23 　

ISSN： 2188-0115

eISSN： 2188-0115
4H‐SiC MOSFETチャネル中の単一光子源に対する水素の影響

阿部裕太, 岡本光央, 小野田忍, 大島武, 春山盛善, 春山盛善, 加田渉, 花泉修, 原田信介, 鹿児山陽平, 梅田享英

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　78th　ROMBUNNO.6p‐A201‐20-3513　2017/08/25
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2017.2.0_3513 　

eISSN： 2436-7613
4H‐SiC MOSFETチャネルの単一光子源のゲート電圧制御

梅田享英, 阿部裕太, 岡本光央, 原田信介, 春山盛善, 春山盛善, 加田渉, 花泉修, 小野田忍, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　78th　ROMBUNNO.6p‐A201‐19-3512　2017/08/25
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/jsapmeeting.2017.2.0_3512 　

eISSN： 2436-7613
Transient current induced in thin film diamonds by swift heavy ions

Shin-Ichiro Sato, Takahiro Makino, Takeshi Ohshima, Tomihiro Kamiya, Wataru Kada, Osamu Hanaizumi, Veljko Grilj, Natko Skukan, Michal Pomorski, Gyorgy Vizkelethy

DIAMOND AND RELATED MATERIALS　75　161-168　2017/05

DOI： 10.1016/j.diamond.2017.04.005 　

ISSN： 0925-9635

eISSN： 1879-0062
Analysis of Space Radiation Resistance in GaN HEMT

日坂隆行, 佐々木肇, 小野田忍, 大島武

三菱電機技報　91　(5)　305-308　2017/05
Publisher: 三菱電機エンジニアリングe-ソリューション&サービス事業部 ; 1962-
ISSN： 0369-2302
Observation of irradiation effects of ions in AlGaN/GaN HEMTs

佐々木肇, 日坂隆行, 門岩薫, 奥友希, 小野田忍, 大島武, 田口英次, 保田英洋

電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan　2017　(42)　23-28　2017/03/09
Publisher: 電気学会
窒化ガリウム中の単一希土類元素からの発光観測を目指したイオン注入法および熱処理条件の検討

佐藤真一郎, 岡田浩, 出来真斗, 若原昭浩, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　78th　2017

ISSN： 2758-4704
SiC p⁺nn⁺ダイオードに形成される単一光子源の発光スペクトル

常見大貴, 常見大貴, 本多智也, 本多智也, 牧野高紘, 小野田忍, 佐藤真一郎, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　78th　2017

ISSN： 2758-4704
SiC p⁺nn⁺ダイオード中の発光中心のバイアス電圧による発光強度変化

本多智也, 本多智也, 常見大貴, 常見大貴, 児島一聡, 佐藤真一郎, 牧野高紘, 小野田忍, 土方泰斗, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　78th　2017

ISSN： 2758-4704
SiC pinダイオード中の発光中心の観察

常見大貴, 常見大貴, 本多智也, 本多智也, 牧野高紘, 小野田忍, 佐藤真一郎, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017

ISSN： 2758-4704
ダイヤモンドの高速重イオン誘起過渡電流測定とポーラリゼーション効果

佐藤真一郎, 牧野高紘, 大島武, VIZKELETHY Gyorgy, 神谷富裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017

ISSN： 2758-4704
4H-SiC MOSFETチャネルの単一光子源の偏光角度依存性

阿部裕太, 岡本光央, 小野田忍, 大島武, 春山盛善, 春山盛善, 加田渉, 花泉修, 小杉亮治, 原田信介, 梅田享英

応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017
イオン注入による原子空孔の形成とNVセンターへの変換効率

小野田忍, 立見和雅, 春山盛善, 春山盛善, 寺地徳之, 磯谷順一, 山田圭介, 谷井孝至, 川原田洋, 品田高宏, 加田渉, 花泉修, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017

ISSN： 2436-7613
ダイヤモンド蛍光飛跡検出器におけるNVセンター形成効率の窒素濃度依存性

立見和雅, 春山盛善, 立見和雅, 春山盛善, 小野田忍, 寺地徳之, 磯谷順一, 加田渉, 大島武, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017

ISSN： 2436-7613
イオン注入法によって作製したNVセンター近傍の欠陥のナノスケール磁気共鳴測定

春山盛善, 春山盛善, 小野田忍, 加田渉, 磯谷順一, 寺地徳之, 山野颯, 川原田洋, 大島武, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017

ISSN： 2436-7613
浅い単一NVセンターの規則的配列を用いた表面の水素核スピンの検出

福田諒介, 東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 山野颯, BALASUBRAMANIAN P., STUERNER F., SCHMITT S., MCGUINNESS L.P., JELEZKO F., 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017

ISSN： 2436-7613
Development of Fluorescent Nuclear Track Detector by Using Diamond as a Host Material

春山盛善, 加田渉, 花泉修, 小野田忍, 大島武, 寺地徳之, 磯谷順一

放射線 = Ionizing radiation　42　(3)　91-95　2017/01
Publisher: 応用物理学会放射線分科会
ISSN： 0285-3604
Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

Shin Ichiro Sato, Shin Ichiro Sato, Kenneth J. Schmieder, Seth M. Hubbard, David V. Forbes, Jeffrey H. Warner, Takeshi Ohshima, Robert J. Walter

Journal of Applied Physics　119　2016/05/14

DOI： 10.1063/1.4949476 　

ISSN： 0021-8979
プロトンマイクロビーム照射によるSiC中の発光中心の形成

本多智也, 本多智也, Kraus HANNES, Kraus HANNES, 加田渉, 小野田忍, 春山盛善, 春山盛善, 佐藤隆博, 江夏昌志, 神谷富裕, 川端駿介, 川端駿介, 三浦健太, 花泉修, 土方泰斗, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　63rd　2016
超薄窓型単結晶ダイヤモンド荷電粒子検出器の開発(2)

加田渉, 神谷富裕, GRILJ Veljko, SKUKAN Natko, SUDIC Ivan, POMORSKI Michal, 牧野高紘, 安藤裕士, 安藤裕士, 神林佑哉, 神林佑哉, 小野田忍, 花泉修, JAKSIC Milko, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　63rd　2016
4H-SiC MOSFETにおける単一発光欠陥の界面酸化プロセス依存性の共焦点顕微鏡評価

阿部裕太, 岡本光央, 小杉亮治, 原田信介, 波多野睦子, 岩崎孝之, 小野田忍, 春山盛善, 春山盛善, 加田渉, 花泉修, 大島武, 梅田享英

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　77th　2016
超薄窓型単結晶ダイヤモンドを利用した透過型荷電粒子検出器の開発

加田渉, 神谷富裕, GRILJ Veljko, SKUKAN Natko, SUDIC Ivan, POMORSKI Michal, 牧野高紘, 安藤裕士, 安藤裕士, 神林佑哉, 神林佑哉, 小野田忍, 花泉修, JAKSIC Milko, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　77th　2016
NVセンターの形成効率の熱処理温度依存性

春山盛善, 春山盛善, 小野田忍, 立見和雅, 寺地徳之, 磯谷順一, 加田渉, 大島武, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　63rd　2016
ダイヤモンド蛍光飛跡検出器のイオン種依存性

立見和雅, 春山盛善, 春山盛善, 小野田忍, 寺地徳之, 磯谷順一, 加田渉, 大島武, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　63rd　2016
ナノホールレジストマスクを用いたNVセンター配列の作製 II

岡田拓真, 東又格, 加賀美理沙, 寺地徳之, 小野田忍, 山田圭介, 春山盛善, 春山盛善, 稲葉優文, 山野颯, BALASUBRAMANIAN Priyadharshini, NAYDENOV Boris, MCGUINNESS Liam, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　77th　2016
ナノホールレジストマスクを用いた低エネルギーイオン注入による量子センシングのためのNVセンター配列の作製

東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 山野颯, BALASUBRAMANIAN Priyadharshini, MCGUINNESS Liam P, NAYDENOV Boris, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　77th　2016
イオン飛跡に沿って形成されるNVセンターのスピン特性

小野田忍, 立見和雅, 春山盛善, 春山盛善, 寺地徳之, 磯谷順一, 山野颯, 川原田洋, 加田渉, 花泉修, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　77th　2016
イオン注入を用いたSiVセンターの作製と生成収率のエネルギー依存性評価

加賀美理沙, 東又格, 岡田拓真, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 大島武, 品田高宏, 加田渉, 花泉修, 磯谷順一, 谷井孝至

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　77th　2016
20pCD-10 Detection of High Energy Heavy Ion Tracks in Diamond

Sato S.-i, Haruyama H, Onoda S, Teraji T, Isoya J, Kada W, Ohshima T, Hanaizumi O

Meeting Abstracts of the Physical Society of Japan　71　(0)　702-702　2016
Publisher: The Physical Society of Japan
DOI： 10.11316/jpsgaiyo.71.1.0_702 　

ISSN： 2189-079X
21aBK-4 Current Status of Creation Technique of Color Centers in Diamonds by Quantum Beams

Onoda S, Muller Christoph, McGuinness Liam, Balasubramanian Priyadharshini, Naydenov Boris, Jelezko Fedor, Sato S.-i, Ohshima T, Kada W, Hanaizumi O, Tanii T, Haruyama M, Kawarada H, Teraji T, Isoya J, Koike G, Higashimata I, Inaba M, Yamano K, Kato K

Meeting Abstracts of the Physical Society of Japan　71　(0)　725-726　2016
Publisher: The Physical Society of Japan
DOI： 10.11316/jpsgaiyo.71.1.0_725 　

ISSN： 2189-079X
Defects in GaAs solar cells with InAs quantum dots created by proton irradiation

Shin Ichiro Sato, Shin Ichiro Sato, Kenneth J. Schmieder, Seth M. Hubbard, David V. Forbes, Jeffery H. Warner, Takeshi Ohshima, Robert J. Walter

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015　2015/12/14

DOI： 10.1109/PVSC.2015.7355868 　
Charged particle radiation effects on flexible a-Si/a-SiGe/a-SiGe triple junction solar cells for space use

Shin Ichiro Sato, Kevin Beernink, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　2015-August　76-82　2015/08/04

DOI： 10.1109/PVSC-Vol2.2013.7179251 　

ISSN： 0160-8371
Energy loss process analysis for radiation degradation and immediate recovery of amorphous silicon alloy solar cells

Shin Ichiro Sato, Kevin Beernink, Takeshi Ohshima

Japanese Journal of Applied Physics　54　(6)　61401-61401　2015/06/01
Publisher: Institute of Physics
DOI： 10.7567/JJAP.54.061401 　

ISSN： 0021-4922
荷電粒子検出器となる薄膜型単結晶CVDダイヤモンド上での細胞培養の試み

加田渉, 酒井真理, POMORSKI Michal, GRILJ Veljko, SKUKAN Natko, 神林佑哉, 神林佑哉, 牧野高紘, JAKSIC Milko, 小野田忍, 大島武, 神谷富裕, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　62nd　2015
荷電粒子誘起電荷解析法を利用したダイヤモンド検出器内部の欠陥準位計測

加田渉, 神林佑哉, 神林佑哉, 小野田忍, 牧野高紘, 安藤裕士, 梅沢仁, 杢野由明, 鹿田真一, 花泉修, 神谷富裕, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　62nd　2015
重イオンマイクロビームを利用した4H-SiCショットキーバリアダイオード中の欠陥評価

神林佑哉, 神林佑哉, 安藤裕士, 加田渉, 小野田忍, 牧野高紘, 星乃紀博, 土田秀一, 花泉修, 神谷富裕, 大島武

応用物理学会春季学術講演会講演予稿集(CD-ROM)　62nd　2015
CVD合成ダイヤモンドを用いた高エネルギー重イオン飛跡の検出

春山盛善, 春山盛善, 小野田忍, 寺地徳之, 磯谷順一, 加田渉, 大島武, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　62nd　2015
ナノホールレジストマスクを用いたNVセンタ配列の作製

東又格, 小池悟大, 寺地徳之, 小野田忍, 稲葉優文, BALASUBRAMANIAN Priyadharshini, NAYDENOV Boris, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 磯谷順一, 谷井孝至

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　76th　2015
重イオン照射を用いたNVセンター形成条件の最適化

春山盛善, 春山盛善, 小野田忍, 寺地徳之, 磯谷順一, 加田渉, 大島武, 花泉修

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　76th　2015
Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

S. I. Maximenko, M. P. Lumb, R. Hoheisel, M. Gonzalez, D. A. Scheiman, S. R. Messenger, T. N.D. Tibbits, M. Imaizumi, T. Ohshima, S. I. Sato, P. P. Jenkins, R. J. Walters

Journal of Applied Physics　118　2015/01/01

DOI： 10.1063/1.4939067 　

ISSN： 0021-8979
24pDF-1 Development of sensors based on wide gap semiconductor materials

Tanaka M. M, Shimazaki S, Tsuchida H, Miuchi K, Murakami T, Hoshino N, Yamamoto K, Makino T, Shimaoka T, Shinmyo A, Ichikawa A, Ohshima T, Onoda S, Kaneko J, Saito M

Meeting Abstracts of the Physical Society of Japan　70　(0)　2015
Publisher: 一般社団法人日本物理学会
ISSN： 2189-079X
Living cell cultivation on single-crystal CVD diamond membrane

Wataru Kada, Makoto Sakai, Michal Pomorski, Veljko Grilj, Natko Skukan, Yuya Kambayashi, Takahiro Makino, Milko Jaksic, Shinobu Onoda, Takeshi Ohshima, Tomihiro Kamiya, Osamu Hanaizumi

2015
Reversible changes in temperature dependence of electric conductivity of hydrogenated amorphous silicon caused by proton irradiation

Shin-ichiro Sato, Takeshi Ohshima

JOURNAL OF NON-CRYSTALLINE SOLIDS　392　11-18　2014/06

DOI： 10.1016/j.jnoncryso1.2014.03.026 　

ISSN： 0022-3093

eISSN： 1873-4812
SiC‐MOSキャパシタの電気特性のガンマ線照射線量依存性

田中量也, 横関貴史, 藤田奈津子, 牧野高紘, 小野田忍, 大島武, 田中雄季, 神取幹郎, 吉江徹, 土方泰斗

応用物理学会春季学術講演会講演予稿集(CD-ROM)　61st　ROMBUNNO.17A-PG3-11　2014/03/03
Si及びSiC‐MOSFETのI‐V特性に対するガンマ線照射の影響

横関貴史, 田中量也, 藤田奈津子, 牧野高紘, 小野田忍, 大島武, 田中雄季, 神取幹郎, 吉江徹, 土方泰斗

応用物理学会春季学術講演会講演予稿集(CD-ROM)　61st　ROMBUNNO.17A-PG3-12　2014/03/03
薄膜CVDダイヤモンド検出器で起こる集束イオンビーム照射効果の連続測定

加田渉, 岩本直也, GRILJ Veljko, 牧野高紘, 佐藤隆博, 小野田忍, SKUKAN Natko, 大島武, JAKSIC Milko, 神谷富裕, 花泉修

応用物理学会春季学術講演会講演予稿集(CD-ROM)　61st　2014
超薄窓型単結晶ダイヤモンド荷電粒子検出器の開発

加田渉, 岩本直也, POMORSKI Michal, GRILJ Veljko, SKUKAN Natko, 牧野高紘, 神林佑哉, JAKSIC Milko, 小野田忍, 大島武, 神谷富裕, 花泉修

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　75th　2014

ISSN： 2436-7613
ダイヤモンドショットキバリアダイオードを用いた高エネルギー荷電粒子の検出

小野田忍, 神林佑哉, 神林佑哉, 加田渉, 岩本直也, 岩本直也, 牧野高紘, 梅沢仁, 杢野由明, 鹿田真一, 花泉修, 神谷富裕, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　75th　2014

ISSN： 2436-7613
高エネルギー重イオン照射により形成されたダイヤモンド中のイオン飛跡の検出

春山盛善, 春山盛善, 小野田忍, 磯谷順一, 加田渉, 花泉修, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　75th　2014
アルファ粒子誘起過渡電荷を用いた4H-SiCショットキーバリアダイオード中の欠陥準位評価

神林佑哉, 神林佑哉, 小野田忍, 岩本直也, 岩本直也, 加田渉, 牧野高紘, 星乃紀博, 土田秀一, 大島武, 神谷富裕, 花泉修

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　75th　2014

ISSN： 2436-7613
SiC中の単一発光源となる欠陥の探索

大島武, 小野田忍, 牧野高紘, 岩本直也, JOHNSON B.C., LOHRMANN A., KARLE T., MCCALLUM J.C., CASTELLETTO S., 梅田享英, 佐藤嘉洋, YUWEI Z., IVADY V., GALI A., 春山盛善, 加田渉, 花泉修

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　75th　2014

ISSN： 2436-7613
単一光子源形成に適したダイヤモンド薄膜の成長

寺地徳之, 山本卓, 山本卓, 小泉聡, 渡邊賢司, 小野田忍, 大島武, NAYDENOV Boris, JELEZKO Fedor, 磯谷順一

応用物理学会春季学術講演会講演予稿集(CD-ROM)　61st　2014
ダイヤモンドへの低エネルギーSiイオン注入におけるSi-Vセンタ生成収率の評価

田村崇人, 小池悟大, 寺地徳之, 小野田忍, MCGUINNESS Liam P., ROGERS Lachlan, MUELLER Christoph, NAYDENOV Boris, WU E, YAN Liu, JELEZKO Fedor, 大島武, 品田賢宏, 磯谷順一, 谷井孝至

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　75th　2014
窒素分子・炭素イオン共注入による室温ダイヤモンドスピン量子ビット

山本卓, 山本卓, MUELLER C., MCGUINNESS L.P., 寺地徳之, NAYDENOV B., 小野田忍, 大島武, 小泉聡, WRACHTRUP J., JELEZKO F., 磯谷順一

応用物理学会春季学術講演会講演予稿集(CD-ROM)　61st　2014
First Flight Demonstration of Glass-Type Space Solar Sheet

Kazunori Shimazaki, Yuki Kobayashi, Masato Takahashi, Mitsuru Imaizumi, Mio Murashima, Yu Takahashi, Hiroyuki Toyota, Akio Kukita, Takeshi Ohshima, Shin-ichiro Sato, Tatsuya Takamoto, Hiroaki Kusawake

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　2149-2154　2014

DOI： 10.1109/PVSC.2014.6925350 　
Radiation Response of the Fill-Factor for GaAs Solar Cells with InGaAs Quantum Dot Layers

Tetsuya Nakamura, Taishi Sumita, Mitsuru Imaizumi, Takeyoshi Sugaya, Koji Matsubara, Shigeru Niki, Toru Mochizuki, Akihiro Takeda, Yoshinobu Okano, Shin-ichiro Sato, Takeshi Ohshima

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　2886-2891　2014

DOI： 10.1109/PVSC.2014.6925535 　
Radiation Resistance of Super-Straight Type Amorphous Silicon Germanium Alloy Solar Cells

Shin-ichiro Sato, Tomomi Meguro, Takashi Suezaki, Kenji Yamamoto, Takeshi Ohshima

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　1825-1829　2014

DOI： 10.1109/PVSC.2014.6925278 　
Effect of irradiation on Gallium Arsenide solar cells with multi quantum well structures

S. I. Maximenko, M. P. Lumb, R. Hoheisel, M. Gonzalez, D. A. Scheiman, S. R. Messenger, T. N. D. Tibbits, M. Imaizumi, T. Ohshima, S. -I. Sato, P. P. Jenkins, R. J. Walters

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)　2144-2148　2014

DOI： 10.1109/PVSC.2014.6925349 　
Study of proton irradiation effects on p- and n-type GaN based-on two-terminal resistance dependence on 380 keV proton fluence

Hiroshi Okada, Yuki Okada, Hiroto Sekiguchi, Akihiro Wakahara, Shin Ichiro Sato, Takeshi Ohshima

IEICE Transactions on Electronics　E97-C　409-412　2014/01/01

DOI： 10.1587/transele.E97.C.409 　

ISSN： 0916-8524
アルファ粒子を利用したHPSI4H‐SiC中の欠陥評価

岩本直也, 藤田奈津子, 牧野高紘, 小野田忍, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　74th　ROMBUNNO.17P-B3-6　2013/08/31

ISSN： 2436-7613
4H‐SiCを用いた即時ガンマ線量率計の開発

藤田奈津子, 岩本直也, 小野田忍, 牧野高紘, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　74th　ROMBUNNO.17P-B3-5　2013/08/31
4H‐SiC MOSキャパシタの放射線照射効果の酸化膜依存性

牧野高紘, 出来真斗, 藤田奈津子, 岩本直也, 小野田忍, 大島武

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　74th　ROMBUNNO.19A-P9-7　2013/08/31
Ion irradiation effects on electric properties of hydrogenated amorphous silicon thin films

Shin Ichiro Sato, Takeshi Ohshima

Proceedings of SPIE - The International Society for Optical Engineering　8725　2013/08/12

DOI： 10.1117/12.2015110 　

ISSN： 0277-786X
27pEG-1 Performance Degradation of Hydrogenated Amorphous Silicon Solar Cells and the Electric Conductivity Variation Due to Energetic

Sato Shin-ichiro, Ohshima Takeshi

Meeting abstracts of the Physical Society of Japan　68　(1)　223-223　2013/03/26
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製 II

田村崇人, 小松原彰, 寺地徳之, 小野田忍, 大島武, MUELLER Christoph, NAYDENOV Boris, MCGUINNESS Liam, JELEZKO Fedor, 品田賢宏, 磯谷順一, 谷井孝至

応用物理学会春季学術講演会講演予稿集(CD-ROM)　60th　2013
高純度¹²C同位体濃縮ダイヤモンドのホモエピタキシャル合成

寺地徳之, 山本卓, 山本卓, 小泉聡, 渡邊賢司, 谷口尚, 小野田忍, 大島武, NAYDENOV Boris, JELEZKO Fedor, 磯谷順一

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　74th　2013
ダイヤモンドスピン量子ビットの磁気的結合

山本卓, 山本卓, MUELLER C., MCGUINNESS L. P., 寺地徳之, NAYDENOV B., 小野田忍, 大島武, 小泉聡, WRACHTRUP J., JELEZKO F., 磯谷順一

ダイヤモンドシンポジウム講演要旨集　27th　2013
Effect of proton irradiation on 2DEG in AlGaN/GaN heterostructures

A. Abderrahmane, S. Koide, T. Tahara, S. Sato, T. Ohshima, H. Okada, H. Okada, A. Sandhu, A. Sandhu

Journal of Physics: Conference Series　433　2013/01/01

DOI： 10.1088/1742-6596/433/1/012011 　

ISSN： 1742-6588
Estimation of subcell photocurrent in IMM3J using LED bias light

Tetsuya Nakamura, Mitsuru Imaizumi, Shin Ichiro Sato, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　696-700　2013/01/01

DOI： 10.1109/PVSC.2013.6744247 　

ISSN： 0160-8371
Radiation study in quantum well III-V multi-junction solar cells

M. Gonzalez, M. Gonzalez, R. Hoheisel, R. Hoheisel, M. P. Lumb, M. P. Lumb, D. A. Scheiman, C. G. Bailey, J. Lorentzen, S. Maximenko, S. R. Messenger, P. P. Jenkins, T. N.D. Tibbits, M. Imaizumi, T. Ohshima, S. Sato, R. J. Walter

Conference Record of the IEEE Photovoltaic Specialists Conference　3233-3236　2013/01/01

DOI： 10.1109/PVSC.2013.6745141 　

ISSN： 0160-8371
A study on the artifact external quantum efficiency of Ge bottom subcells in triple-junction solar cells

Mitsunobu Sugai, Jiro Harada, Mitsuru Imaizumi, Shin Ichiro Sato, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　715-720　2013/01/01

DOI： 10.1109/PVSC.2013.6744251 　

ISSN： 0160-8371
Electrical performance degradation of GaAs solar cells with InGaAs quantum dot layers due to proton irradiation

Takeshi Ohshima, Shin Ichiro Sato, Tetsuya Nakamura, Mitsuru Imaizumi, Takeyoshi Sugaya, Koji Matsubara, Shigeru Niki, Akihiro Takeda, Yoshinobu Okano

Conference Record of the IEEE Photovoltaic Specialists Conference　2779-2783　2013/01/01

DOI： 10.1109/PVSC.2013.6745049 　

ISSN： 0160-8371
Comparative study on degradation characteristics of component subcells in IMM triple-junction solar cells irradiated with high-energy electrons and protons

Mitsuru Imaizumi, Tetsuya Nakamura, Michio Tajima, Shin Ichiro Sato, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　3243-3248　2013/01/01

DOI： 10.1109/PVSC.2013.6745143 　

ISSN： 0160-8371
Innovative technologies on proton irradiation ground tests for space solar cells

Mitsuru Imaizumi, Yosuke Yuri, Paul R. Bolton, Shin Ichiro Sato, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　2831-2834　2012/11/26

DOI： 10.1109/PVSC.2012.6318180 　

ISSN： 0160-8371
Change in I-V characteristics of subcells in a multi-junction solar cell due to radiation irradiation

Tetsuya Nakamura, Mitsuru Imaizumi, Shin Ichiro Sato, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　2846-2850　2012/11/26

DOI： 10.1109/PVSC.2012.6318183 　

ISSN： 0160-8371
Degradation behavior of flexible a-Si/a-SiGe/a-SiGe triple junction solar cells irradiated with 20-350 keV protons

Shin Ichiro Sato, Kevin Beernink, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　2856-2861　2012/11/26

DOI： 10.1109/PVSC.2012.6318185 　

ISSN： 0160-8371
Temporal electric conductivity variations of hydrogenated amorphous silicon due to high energy protons

Shin Ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

Journal of Non-Crystalline Solids　358　2039-2043　2012/09/01

DOI： 10.1016/j.jnoncrysol.2011.12.111 　

ISSN： 0022-3093
Anomalous enhancement in radiation induced conductivity of hydrogenated amorphous silicon semiconductors

Shin Ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　286　29-34　2012/09/01

DOI： 10.1016/j.nimb.2012.02.039 　

ISSN： 0168-583X
4H‐SiCショットキーダイオードにおけるイオン誘起電荷の過剰収集

牧野高紘, 出来真斗, 岩本直也, 小野田忍, 星乃紀博, 土田秀一, 大島武

応用物理学会学術講演会講演予稿集(CD-ROM)　73rd　ROMBUNNO.12P-H7-13　2012/08/27
イオン照射したSiC‐MOSキャパシタにおける絶縁破壊電界のLET依存性

出来真斗, 牧野高紘, 岩本直也, 小野田忍, 富田卓朗, 橋本修一, 児島一聡, 大島武

応用物理学会学術講演会講演予稿集(CD-ROM)　73rd　ROMBUNNO.12P-H7-18　2012/08/27
19pAJ-4 Seebeck Coefficient Variations of Hydrogenated Amorphous Silicon due to Ion Irradiation

Sato Shin-ichiro, Ohshima Takeshi

Meeting abstracts of the Physical Society of Japan　67　(2)　150-150　2012/08/24
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions

Shin Ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms　285　107-111　2012/08/15

DOI： 10.1016/j.nimb.2012.05.010 　

ISSN： 0168-583X
1-3 A Study on Soft-Error Hardening for SOI Devices

OGURA S., TAKAHASHI Y., MAKINO T., ONODA S., HIRAO T., OHSHIMA T.

Proceedings of ... Reliability Symposium : the journal of Reliability Engineering Association of Japan　2012　(20)　15-18　2012/06/11
Publisher: Reliability Engineering Association of Japan (REAJ)
Response of semiconductor devices to radiation

OHSHIMA Takeshi

81　(3)　216-219　2012/03/10
Publisher: 応用物理学会
ISSN： 0369-8009
25aAB-3 Electron Transport Change of Hydrogenated Amorphous Silicon due to Self Ion Irradiation

Sato Shin-ichiro, Sai Hitoshi, Ohshima Takeshi, Imaizumi Mitsuru, Shimazaki Kazunori, Kondo Michio

Meeting abstracts of the Physical Society of Japan　67　(1)　196-196　2012/03/05
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
シングルイオンヒットのリアルタイム検出を目的とした透過型薄膜ダイヤモンド検出器の開発

加田渉, GRILJ Veljko, SKUKAN Natko, 佐藤隆博, 牧野高紘, 小野田忍, 江夏昌志, 大島武, JAKSIC Milko, 神谷富裕

応用物理学関係連合講演会講演予稿集(CD-ROM)　59th　2012
NV中心を含むダイヤモンドに単一イオンが誘起する発光の検出

小野田忍, 阿部浩之, 山本卓, 大島武, 磯谷順一, 寺地徳之, 渡邊賢司

応用物理学関係連合講演会講演予稿集(CD-ROM)　59th　2012
ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製

小松原彰, 寺地徳之, 堀匡寛, 熊谷国憲, 田村崇人, 大島武, 小野田忍, 山本卓, MUELLER Christoph, NAYDENOV Boris, MCGUINNESS Liam, JELEZKO Fedor, 谷井孝至, 品田賢宏, 磯谷順一

応用物理学会学術講演会講演予稿集(CD-ROM)　73rd　2012
イオン照射生成による同位体濃縮ダイヤモンド結晶中窒素-空孔発光中心の単一スピン光検出磁気共鳴評価

山本卓, 小野田忍, 大島武, MCGUINNESS Liam, MULLER Christoph, JAHNKE Kay D., HELLER Pascal, GERSTMAYR Alexander, HAEUSSLER Andreas, NAYDENOV Boris, JELEZKO Fedor, DOLDE Florian, FEDDER Helmut, HONERT Jan, WRACHTRUP Joerg, 寺地徳之, 渡邊賢司, 谷口尚, 小泉聡, MARKHAM Matthew L., TWITCHEN Daniel J., 梅田享英, 磯谷順一

ダイヤモンドシンポジウム講演要旨集　26th　2012
単一欠陥をプローブにしたダイヤモンド結晶の共焦点蛍光顕微鏡評価

小野田忍, 阿部浩之, 山本卓, 大島武, 谷口尚, 寺地徳之, SIYUSHEV P., TRAN Thai Hien, YANG S., FEDDER H., WRACHTRUP J., MUELLER C., MCGUINNESS L., NAYDENOV B., JELEZKO F., 角谷均, 磯谷順一

ダイヤモンドシンポジウム講演要旨集　26th　2012
Effects of proton irradiation on the magnetoelectric properties of 2DEG AlGaN/GaN micro-hall sensors

H. Okada, H. Okada, A. Abderrahmane, S. Koide, H. Takahashi, S. Sato, T. Ohshima, A. Sandhu, A. Sandhu, A. Sandhu

Journal of Physics: Conference Series　352　2012/01/01

DOI： 10.1088/1742-6596/352/1/012010 　

ISSN： 1742-6588
Electron and proton irradiation effects on substrate-type amorphous silicon solar cells

Shin Ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

Conference Record of the IEEE Photovoltaic Specialists Conference　001615-001619　2011/12/01

DOI： 10.1109/PVSC.2011.6186265 　

ISSN： 0160-8371
Radiation response of the electrical characteristics of GaAs solar cells with quantum dot layers

Takeshi Ohshima, Shin Ichiro Sato, Mitsuru Imaizumi, Takeyoshi Sugaya, Shigeru Niki

Conference Record of the IEEE Photovoltaic Specialists Conference　001605-001609　2011/12/01

DOI： 10.1109/PVSC.2011.6186263 　

ISSN： 0160-8371
Pseudomorphic glass to enable high efficiency space photovoltaic devices

David Wilt, Alex Howard, Neil Snyder, Theodore Sahlstrom, Nicole A. Heersema, Lakshmi Nathan, Takeshi Ohshima, Shin Ichiro Sato, Mitrsuru Imaizumi

Conference Record of the IEEE Photovoltaic Specialists Conference　001949-001954　2011/12/01

DOI： 10.1109/PVSC.2011.6186335 　

ISSN： 0160-8371
Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC

Manato Deki, Minoru Yamamoto, Takuto Ito, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

AIP Conference Proceedings　1399 Pt.A　119-120　2011/12/01

DOI： 10.1063/1.3666285 　

ISSN： 1551-7616 0094-243X

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Femtosecond laser modification was used to enhance the local electrical conductivities in silicon carbide (SiC). Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts on SiC. The currents of modified lines increased more than six orders of magnitude when compared with those of the non-irradiated SiC. The current sharply increased in the fluence range from 3.3 to 6.7J/cm 2 . From the I-V characteristics and scanning elctroron microscope (SEM) observations, we conclude that the modification related to the formation of the classical laser-induced periodic structures causes the drastic increase of electrical conductivities. ? 2011 American Institute of Physics.
First flight demonstration of film-laminated InGaP/GaAs and CIGS thin-film solar cells by JAXA's small satellite in LEO

Chiharu Morioka, Kazunori Shimazaki, Shirou Kawakita, Mitsuru Imaizumi, Hiroshi Yamaguchi, Tatsuya Takamoto, Shin-ichiro Sato, Takeshi Ohshima, Yosuke Nakamura, Keiichi Hirako, Masato Takahashi

PROGRESS IN PHOTOVOLTAICS　19　(7)　825-833　2011/11

DOI： 10.1002/pip.1046 　

ISSN： 1062-7995
21aEB-1 Electric Conductivity Variations of Impurity Doped Hydrogenated Amorphous Silicon Semiconductors Induced by Ion Irradiation

Sato Shin-ichiro, Sai Hitoshi, Ohshima Takeshi, Imaizumi Mitsuru, Shimazaki Kazunori, Kondo Michio

Meeting abstracts of the Physical Society of Japan　66　(2)　121-121　2011/08/24
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
SiC MOSキャパシタのイオン誘起電流

牧野高紘, 大島武, 岩本直也, 小野田忍, 野崎眞次, 児島一聡

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　ROMBUNNO.25P-BL-11　2011/03/09
25pRA-9 Seebeck Coefficient Variations of Hydrogenated Amorphous Silicon Due to Proton Irradiation

Sato Shn-ichiro, Sai Hitoshi, Ohshima Takeshi, Imaizumi Mitsuru, Shimazaki Kazunori, Kondo Michio

Meeting abstracts of the Physical Society of Japan　66　(1)　178-178　2011/03/03
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
イオン照射によるダイヤモンド結晶中の窒素空孔センターの生成

山本卓, 小野田忍, 大島武, NAYDENOV Boris, DOLDE Florian, FEDDER Helmut, HONERT Jan, JELEZKO Fedor, WRACHTRUP Joerg, 寺地徳之, 渡邊賢司, 谷口尚, 小泉聡, 神田久生, 梅田享英, 磯谷順一

日本物理学会講演概要集　66　(2)　2011

ISSN： 1342-8349
ダイヤモンド薄膜の同位体濃縮

寺地徳之, 小野田忍, 小泉聡, LIAO M., 谷口尚, 大島武, JELEZKO Fedor, WRACHTRUP Joerg, 磯谷順一

ダイヤモンドシンポジウム講演要旨集　25th　2011
双極子双極子相互作用を制御したNVセンターの作成エンジニアリング

小野田忍, 山本卓, 阿部浩之, 花屋博明, 大島武, 谷口尚, 寺地徳之, 渡邊賢司, 小泉聡, 神田久生, 磯谷順一, 梅田享英, 角谷均, JELEZKO F., WRACHTRUP J.

ダイヤモンドシンポジウム講演要旨集　25th　2011
22pGQ-12 Nitrogen-vacancy Fluorescent Centers Created by Ion Implantations in Single Crystal Diamond

Yamamoto T, Teraji T, Watanabe K, Taniguchi T, Koizumi S, Kanda H, Umeda T, Isoya J, Onoda S, Ohshima T, Naydenov Boris, Dolde Florian, Fedder Helmut, Honert Jan, Jelezko Fedor, Wrachtrup Jorg

Meeting Abstracts of the Physical Society of Japan　66　(0)　994-994　2011
Publisher: 一般社団法人日本物理学会
ISSN： 1342-8349
2Pa1-2 Photoacoustic Characterization of Semi-Insulating 6H-SiC Single Crystal Irradiated by Electron(Poster Session)

Wakabayashi Hiromi, Miyazaki Hisashi, Okamoto Yoichi, Morimoto Jun, Onoda Shinobu, Ohshima Takeshi

Proceedings of Symposium on Ultrasonic Electronics　32　(0)　59-60　2011
Publisher: Institute for Ultrasonic Elecronics
ISSN： 1348-8236
Photo- and dark conductivity variations of solar cell quality a-Si:H thin films irradiated with protons

Shin Ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

Conference Record of the IEEE Photovoltaic Specialists Conference　2620-2624　2010/12/20

DOI： 10.1109/PVSC.2010.5617173 　

ISSN： 0160-8371
Study the effects of proton irradiation on GaAs/Ge solar cells

Dalia Elfiky, Dalia Elfiky, Masafumi Yamaguchi, Takuo Sasaki, Tatsuya Takamoto, Chiharu Morioka, Mitsuru Imaizumi, Takeshi Ohshima, Shin Ichiro Sato, Mohamed Elnawawy, Tarek Eldesuky, Ahmed Ghitas

Conference Record of the IEEE Photovoltaic Specialists Conference　2528-2532　2010/12/20

DOI： 10.1109/PVSC.2010.5614633 　

ISSN： 0160-8371
Change in the electrical performance of InGaAs quantum dot solar cells due to irradiation

T. Ohshima, S. Sato, C. Morioka, M. Imaizumi, T. Sugaya, S. Niki

Conference Record of the IEEE Photovoltaic Specialists Conference　2594-2598　2010/12/20

DOI： 10.1109/PVSC.2010.5614152 　

ISSN： 0160-8371
Changes of Majority-Carrier Concentration in 4H-SiC Epilayers by 200keV Electron Irradiation

NOJIRI Takunori, NISHINO Kozou, YANAGISAWA Hideki, MATSUURA Hideharu, ONODA Shinobu, OHSHIMA Takeshi

IEICE technical report　110　(351)　57-62　2010/12/10
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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The temperature dependencies of the majority-carrier concentrations in Al-doped 4H-SiC or N-doped 4H-SiC epilayers with several densities of dopants (Al or N) are measured after the irradiation with 200keV electrons at several fluences. By FCCS (Free Carrier Concentration Spectroscopy) using the obtained data, we investigate the changes of the dopant density and compensating density by the irradiation, and discuss the influence of dopant densities or dopant species on these changes.
Proton-induced photoconductivity increment and the thermal stability of a-Si:H thin film

Shin Ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo

Journal of Non-Crystalline Solids　356　2114-2119　2010/09/01

DOI： 10.1016/j.jnoncrysol.2010.07.018 　

ISSN： 0022-3093
SiCダイオードの過渡電荷収集における電子線誘起欠陥の影響

岩本直也, 小野田忍, 牧野高紘, 大島武, 児島一聡, 小池俊平, 小泉淳, 内田和男, 野崎眞次

応用物理学会学術講演会講演予稿集(CD-ROM)　71st　ROMBUNNO.15A-ZS-11　2010/08/30
23pRH-3 Radiation Induced Conductivity of Hydrogenated Amorphous Silicon

Sato Shin-ichiro, Sai Hitoshi, Ohshima Takeshi, Imaizumi Mitsuru, Shimazaki Kazunori, Kondo Michio

Meeting abstracts of the Physical Society of Japan　65　(2)　118-118　2010/08/18
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
ダイヤモンドのNVセンターのパルスENDOR:超微細相互作用・核四極子相互作用の符号決定とスピン密度分布の振動的ふるまい

磯谷順一, EDMONDS A. M., 梅田享英, 中村和郎, 角谷均, 神田久生, 谷口尚, 大島武, 小野田忍, 佐藤真一郎, 森下憲雄, 花屋博明, JELEZKO F., WRACHTRUP J.

電子スピンサイエンス学会年会講演要旨集　49th　2010
21aHT-5 Creation and spin relaxation of NV Center of diamond in high concentrations

Isoya J, Ohshima T, Onoda S, Morishita N, Hanaya H, Taniguchi T, Watanabe K, Kanda H, Sumiya H

Meeting Abstracts of the Physical Society of Japan　65　(0)　983-983　2010
Publisher: The Physical Society of Japan
ISSN： 1342-8349
2E-9 Characterization of LiNbO_3 Single Crystal Substrates Irradiated by Electron(Physical Acoustics & Nonlinear & High-power Ultrasound, Sonochemistry)

Miyazaki Hisashi, Morimoto Jun, Toda Kohji, Onoda Shinobu, Ohshima Takeshi

Proceedings of Symposium on Ultrasonic Electronics　31　(0)　429-430　2010
Publisher: Institute for Ultrasonic Elecronics
ISSN： 1348-8236
Anomalous photoconductivity variations of solar cell quality a-Si:H thin films induced by proton irradiation

Shin Ichiro Sato, Hitoshi Sai, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　002354-002358　2009/12/01

DOI： 10.1109/PVSC.2009.5411322 　

ISSN： 0160-8371
Research on Radiation Resistance in SiC Epilayer by 200keV Electron Irradiation : dopant-density dependence

YANAGISAWA Hideki, NISHINO Kozo, NOJIRI Takunori, MATSUURA Hideharu, OHSHIMA Takeshi

IEICE technical report　109　(321)　17-22　2009/11/27
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We investigate the effect of 200 keV electron irradiation that only displaces C atoms in SiC on the majority-carrier concentration in Al-doped or N-doped 4H-SiC epilayers. In Al-doped 4H-SiC, the fluence dependence of the density of one acceptor species is elucidated to be different from that of the density of the other acceptor species. In N-doped 4H-SiC, N donors located at cubic sublattice sites are more radiation-resistant than N donors located at hexagonal sublattice sites.
Reduction in Acceptor Density due to Displacement of Carbon atom in Al-doped 4H-SiC by Electron Irradiation

NISHINO Kozo, YANAGISAWA Hideki, NOJIRI Takunori, MATSUURA Hideharu, OHSHIMA Takeshi

IEICE technical report　109　(321)　23-28　2009/11/27
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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SiC is expected to replace Si as a new material for semiconductor devices capable of operating in an irradiated environment. The irradiation of 200 keV electrons to Al-doped 4H-SiC epilayers is found to change the densities of two types of acceptor species. Besides 200 keV electron irradiation, the irradiation of electrons with various energies (100, 150, 500 keV) is investigated to affect the densities of those acceptors.
Change of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiation

NOJIRI Takunori, YANAGISAWA Hideki, MYOJIN Yosiko, MATSUURA Hideharu, OHSHIMA Takeshi

IEICE technical report　109　(321)　11-16　2009/11/27
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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In Al-doped 6H-SiC epilayers irradiated with electrons, the densities and energy levels of acceptor and hole traps were evaluated by FCCS using the temperature-dependent hole concentration obtained by Hall-effect measurements in the van der pauw configuration. The density of Al acceptors was found to be significantly reduced by 200 keV electron irradiation. To investigate the origin of this phenomenon, we discuss the changes of acceptor densities and defects in Al-doped 6H-SiC epilayers irradiated with 100 keV electrons.
低エネルギー電子線照射による6H‐SiCダイオードの電荷収集効率の低下

岩本直也, 小野田忍, 大島武, 児島一聡, 小泉淳, 内田和男, 野崎眞次

応用物理学会学術講演会講演予稿集　70th　(1)　395　2009/09/08
25pZB-4 Photoconductivity Variations of Hydrogenated Amorphous Silicon by Charged Particles 2

Sato Shin-ichiro, Sai Hitoshi, Imaizumi Mitsuru, Shimazaki Kazunori, Ohshima Takeshi, Kondo Michio

Meeting abstracts of the Physical Society of Japan　64　(2)　59-59　2009/08/18
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_<1-x>N

PARK Ji-Ho, OKADA Hiroshi, WAKAHARA Akihiro, FURUKAWA Yuzo, KIM Yong-Tae, SONG Jonghan, CHANG Ho-Jung, SATO Shin-ichiro, OHSHIMA Takeshi

IEICE technical report　109　(98)　141-144　2009/06/17
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions-doped III-nitride semiconductor. Tb ions were implanted into Al_<0.35>Ga_<0.65>N epi-layers grown by OMVPE, and the dose were in the range of 1×10^<12>〜2.8×10^<16>Tb/cm^2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×10^<14>Tb/cm^2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×10^<13>Tb/cm^2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×10^<13>Tb/cm^2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low.
Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Shin ichiro Sato, Haruki Miyamoto, Haruki Miyamoto, Mitsuru Imaizumi, Kazunori Shimazaki, Chiharu Morioka, Katsuyasu Kawano, Takeshi Ohshima

Solar Energy Materials and Solar Cells　93　768-773　2009/06/01

DOI： 10.1016/j.solmat.2008.09.044 　

ISSN： 0927-0248
ガンマ線照射した4H‐SiC MESFETの電気特性評価

小野田忍, 岩本直也, 小野修一, 片上崇治, 新井学, 河野勝泰, 大島武

応用物理学関係連合講演会講演予稿集　56th　(1)　447　2009/03/30
Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles

Shin Ichiro Sato, Takeshi Ohshima, Mitsuru Imaizumi

Journal of Applied Physics　105　2009/03/09

DOI： 10.1063/1.3079522 　

ISSN： 0021-8979
28aSK-1 Photoconductivity Variations of Hydrogenated Amorphous Silicon by Charged Particles

Sato Shin-ichiro, Sai Hitoshi, Imaizumi Mitsuru, Shimazaki Kazunori, Ohshima Takeshi

Meeting abstracts of the Physical Society of Japan　64　(1)　152-152　2009/03/03
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
重イオンマイクロビームを用いた半導体の拡散長評価

小野田忍, 岩本直也, 平尾敏雄, 大島武, 河野勝泰

日本原子力研究開発機構JAEA-Conf　146-149　2009/03
Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation

Satoko Nakagawa-Toyota, Michio Tajima, Kazuyuki Hirose, Takeshi Ohshima, Hisayoshi Itoh

JAPANESE JOURNAL OF APPLIED PHYSICS　48　(3)　031201-1-031201-4　2009/03

DOI： 10.1143/JJAP.48.031201 　

ISSN： 0021-4922
LET Dependence of single event transient pulse-widths in SOI logic cell

T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S.Onoda, T. Hirao, T. Ohshima

IEEE Transactions on Nuclear Sciecnce　56　(1,Pt.2)　202-207　2009

DOI： 10.1109/TNS.2008.2009054 　

ISSN： 0018-9499
Experimental verification of scan-architectured-based evaluation technique of SET and SEU soft-error rates at each flip-flop in logic VLSE systems

Y. Yanagawa, D. Kobayashi, K. Hirose, T. Makino, H. Saito, H. Ikeda, S. Onoda, T. Hirao, T. Ohshima

IEEE Transactions on Nuclear Science　56　(4,Pt.2)　1958-1963　2009

DOI： 10.1109/TNS.2009.2020166 　

ISSN： 0018-9499
Niel analysis of radiation degradation parameters derived from quantum efficiency of triple-junction space solar cell

Shin Ichiro Sato, Haruki Miyamoto, Haruki Miyamoto, Mitsuru Imaizumi, Kazunori Shimazaki, Chiharu Morioka, Katsuyasu Kawano, Takeshi Ohshima

Conference Record of the IEEE Photovoltaic Specialists Conference　2008/12/01

DOI： 10.1109/PVSC.2008.4922706 　

ISSN： 0160-8371
Irradiation and measurement of solar cells at low intensity, low temperature (LILT) conditions

M. Imaizumi, R. D. Harris, R. J. Walters, J. R. Lorentzen, S. R. Messenger, J. G. Tischler, T. Ohshima, S. Sato, P. R. Sharps, N. S. Fatemi

Conference Record of the IEEE Photovoltaic Specialists Conference　2008/12/01

DOI： 10.1109/PVSC.2008.4922641 　

ISSN： 0160-8371
Irradiation and measurement of GaAs based solar cells at low intensity, low temperature (LILT) conditions

R. D. Harris, M. Imaizumi, R. J. Walters, J. R. Lorentzen, S. R. Messenger, J. G. Tischler, T. Ohshima, S. Sato, P. R. Sharps, N. S. Fatemi

European Space Agency, (Special Publication) ESA SP　2008/12/01

ISSN： 0379-6566
In situ irradiation and measurement of triple junction solar cells at low intensity, Low Temperature (LILT) conditions

R. D. Harris, M. Imaizumi, R. J. Walters, J. R. Lorentzen, S. R. Messenger, J. G. Tischler, T. Ohshima, S. Sato, P. R. Sharps, N. S. Fatemi

IEEE Transactions on Nuclear Science　55　3502-3507　2008/12/01

DOI： 10.1109/TNS.2008.2006971 　

ISSN： 0018-9499
6H‐SiC p‐MOSキャパシタに誘起されるシングルイベント過渡電流の測定

岩本直也, 大島武, 小野田忍, 児島一聡, 河野勝泰

応用物理学会学術講演会講演予稿集　69th　(1)　361　2008/09/02
Radiation-Induced Transient-Pulses in Logic LSIs for Use in Space Applications

MAKINO Takahiro, YANAGAWA Yoshimitsu, KOBAYASHI Daisuke, FUKUDA Seisuke, HIROSE Kazuyuki, IKEDA Hirokazu, SAITO Hirobumi, ONODA Shinobu, HIRAO Toshio, OHSHIMA Takeshi, TAKAHASHI Daisuke, ISHII Shigeru, KUSANO Masaki, IKEBUCHI Hiroshi, KURODA Yoshikatsu

Technical report of IEICE. SANE　108　(100)　67-72　2008/06/19
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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SET pulse-widths were measured as a function of LET by using pulse capture circuits. In addition, a scan flip-flop (FF) is designed to observe both single event transient (SET) and single event upset (SEU) soft errors in logic VLSI system.
Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

MATSUSHITA Yoshinori, KATO Masashi, ICHIMURA Masaya, HATAYAMA Tomoaki, OSHIMA Takeshi

IEICE technical report　108　(35)　95-100　2008/05/15
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer these devices to practical use because of presence of crystal defects in the wafer. In this work, we have measured excess carrier decay curves in (0001) Si face epitaxial p-type 4H-SiC layers with the microwave photoconductivity decay (μ-PCD) method. Two pieces were irradiated by electron in order to control defect density. Excess carrier decayed fast for the sample that has high density of defects and the decays were also fast in the measurement with low injection level. We compare these decay curves to calculated decay curves. As a result, we considered that EH_<6/7> center is dominant for samples with low EH_<6/7>, Z_<1/2> center density and Z_<1/2> center is dominant for samples with high EH_<6/7>, Z_<1/2> center density.
Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

MATSUSHITA Yoshinori, KATO Masashi, ICHIMURA Masaya, HATAYAMA Tomoaki, OSHIMA Takeshi

IEICE technical report　108　(34)　95-100　2008/05/15
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer these devices to practical use because of presence of crystal defects in the wafer. In this work, we have measured excess carrier decay curves in (0001) Si face epitaxial p-type 4H-SiC layers with the microwave photoconductivity decay (μ-PCD) method. Two pieces were irradiated by electron in order to control defect density. Excess carrier decayed fast for the sample that has high density of defects and the decays were also fast in the measurement with low injection level. We compare these decay curves to calculated decay curves. As a result, we considered that EH_<6/7> center is dominant for samples with low EH_<6/7>, Z_<1/2> center density and Z_<1/2> center is dominant for samples with high EH_<6/7>, Z_<1/2> center density.
ドライ酸化により作製した6H‐SiC MOSFETのガンマ線照射効果

岩本直也, 大島武, 小野田忍, 児島一聡, 河野勝泰

応用物理学関係連合講演会講演予稿集　55th　(1)　434　2008/03/27
C-10-6 Transient current induced in MOS structure devices by heavy ion irradiation.

Hirao Toshio, Fugane Masaru, Onoda Shinobu, Ohshima Takeshi, Takahashi Yoshihiro

Proceedings of the IEICE General Conference　2008　(2)　79-79　2008/03/05
Publisher: The Institute of Electronics, Information and Communication Engineers
Study of single event transient pulse-width in SOI logic cell

T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, H. Ikeda, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, T. Ohshima

Proceedings of The 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA)　77-81　2008
酸素およびニッケルイオン照射における6H‐SiC p⁺nダイオードのTIBIC測定

岩本直也, 小野田忍, 菱木繁臣, 三島健太, 大島武, 佐藤隆博, 及川将一, 神谷富裕, 坂本愛理, 中野逸夫, 河野勝泰

応用物理学関係連合講演会講演予稿集　54th　(1)　436　2007/03/27
6H‐SiCダイオードの電荷収集効率に及ぼすオージェ再結合の影響

小野田忍, 大島武, 平尾敏雄, 菱木繁臣, 岩本直也, 三島健太, 河野勝泰

応用物理学関係連合講演会講演予稿集　54th　(1)　437　2007/03/27
Report of "The 7th International Workshop on RAdiation effects on SEmiconductor Devices for space Application" (7th RASEDA)

OHSHIMA Takeshi

The journal of Reliability Engineering Association of Japan　29　(2)　120-121　2007/03/01
Publisher: Reliability Engineering Association of Japan (REAJ)
ISSN： 0919-2697
Publisher's note: Divacancy in 4H-SiC (vol 96, 055501, 2006)

NT Son, P Carlsson, J ul Hassan, E Janzen, T Umeda, J Isoya, A Gali, M Bockstedte, N Morishita, T Ohshima, H Itoh

PHYSICAL REVIEW LETTERS　96　(6)　2006/02

DOI： 10.1103/PhysRevLett.96.069902 　

ISSN： 0031-9007
28aXT-10 Electron spin phase relaxation of donors and acceptors in SiC

Isoya J., Nozawa H., Umeda T., Ohshima T., Morishita N., Kamiya T.

Meeting abstracts of the Physical Society of Japan　59　(1)　962-962　2004/03/03
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

Kin Kiong Lee, Yuuki Ishida, Takeshi Ohshima, Kazutoshi Kojima, Yasunori Tanaka, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Tomihiro Kamiya

IEEE Electron Device Letters　24　(7)　466-468　2003/07

DOI： 10.1109/LED.2003.815006 　

ISSN： 0741-3106
Spin Relaxation of Shallow Donors in SiC

Isoya J., Ohshima T., Morishita N., Kamiya T., Itoh H.

Meeting abstracts of the Physical Society of Japan　58　(1)　933-933　2003/03/06
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
3MeV Electron Irradiation-Induced Defects in CuInSe_2 Thin Films

Hae-Seok Lee, Hiroshi Okada, Akihiro Wakahara, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda, Akira Yoshida

Journal of Physics and Chemistry of Solids　64　1887-1890　2003

DOI： 10.1016/S0022-3697(03)00109-4 　
Photoelectromagnetic Effects on Electron and Proton Irradiated CuInSe2 Thin Films

Hae-Seok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh

Journal of Applied Physics　94　(1)　276-278　2003

DOI： 10.1063/1.1579545 　

ISSN： 0021-8979
Effect of Proton Irradiation on Electrical Properties of CuInSe2 Thin Films

Hae-Seok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda

Solar Energy Materials and Solar Cells　75　(1/2)　57-63　2003

DOI： 10.1016/S0927-0248(02)00100-9 　

ISSN： 0927-0248
High-Energy Phosphorus Ion Irradiation of Diamond : Serching of Condition for Minimizing the Concentration of Irradiation-induced Defects

Isoya J., Morita Y., Ohshima T., Itoh H., Kanda H., Sumiya H.

Meeting abstracts of the Physical Society of Japan　56　(1)　855-855　2001/03/09
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
ESR study on vacancy clusters of silicon carbide

Mizuochi Norikazu, Isoya Junichi, Yamasaki Satoshi, Takizawa Haruki, Morishita Norio, Ohshima Takeshi, Itoh Hisayoshi

Meeting abstracts of the Physical Society of Japan　56　(1)　846-846　2001/03/09
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
31a-ZA-1 ESR Studies of Energy Carbon Ion Implanted Diamond Crystals

Isoya J, Morita Y, Ohshima H, Kanda H., Sumiya H

Meeting abstracts of the Physical Society of Japan　54　(1)　111-111　1999/03/15
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
Effects of Gamma-Ray Irradiation and the Mechanisms on Electrical Characteristics of SiC Metal-Oxide-Semiconductor Structures

YOSHIKAWA Masahito, OHSHIMA Takeshi, ITOH Hisayoshi, NASHIYAMA Isamu, TAKAHASHI Yoshihiro, OHNISHI Kazunori, OKUMURA Hajime, YOSHIDA Sadahumi

The Transactions of the Institute of Electronics,Information and Communication Engineers. C-(0xF9C2)　81　(1)　140-150　1998/01
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0915-1907
8a-S-7 ESR Studies of Diamonds Implanted at High Temperatures with High-Energy Phosphorus Ions

Isoya J., Kanda H., Morita Y., Ohshima T., Sumiya H., Satoh S

Meeting abstracts of the Physical Society of Japan　52　(2)　111-111　1997/09/16
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
ESR Study of High Energy Phosphorus Ion Implanted Diamond

Isoya J., Kanda H., Morita Y., Oshima T.

Abstracts of the meeting of the Physical Society of Japan. Sectional meeting　1996　(2)　191-191　1996/09/13
Publisher: The Physical Society of Japan (JPS)
3a-M-6 ESR Study of High Energy Phosphorus Ion Implanted Synthetic Diamond Crystals

Isoya J., Kanda H., Morita Y., Oshima T.

Abstracts of the meeting of the Physical Society of Japan. Annual meeting　51　(2)　66-66　1996/03/15
Publisher: The Physical Society of Japan (JPS)
27p-N-13 ESR Study of Phosphorus Ion Implanted Synthetic Diamond Crystals

Isoya J., Kanda H., Morita Y., Oshima T.

Abstracts of the meeting of the Physical Society of Japan. Sectional meeting　1995　(2)　31-31　1995/09/12
Publisher: The Physical Society of Japan (JPS)

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Books and Other Publications 5

Defects in functional materials

Y. Yamazaki, S. Onoda, T. Ohshima

World Scientific　2021

ISBN: 9789811203169
Applications of Laser-Driven Particle Acceleration

T. Ohshima, M. Imaizumi

2018/06/05

ISBN: 1498766412
Radiation Response of Silicon Carbide Diodes and Transistors

T. Ohshima, S. Onoda, N. Iwamoto, T. Makino, M. Arai, Y. Tanaka

InTech　2012/10
Radiation Effects on Semiconductors and Polymers for Space Applications

OHSHIMA Takeshi

CRC Press, Taylor & Francis Group　2010
New Applications of Ion Beams to Material, Space, and Biological Science and Engineering

OHSHIMA Takeshi

Marcel Dekker Inc.　2003

Research Projects 26

Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (S)

Institution: Hiroshima University

2024/04/01 - 2029/03/31
量子技術応用のためのダイヤモンドスピンキュービット

大島武

Offer Organization: 科学技術振興機構

Category: 国際的な科学技術共同研究などの推進/先端国際共同研究推進事業/ASPIRE/共同公募(日独)

2024 - 2029

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室温でも高効率光読み出しと長コヒーレンス時間を併せ持つダイヤモンド中スピン量子ビットが注目されている。本課題は、材料科学とコヒーレンス制御を融合し、量子センシングや量子通信へ先進的ダイヤモンド技術を応用することを目的とする。共同で推進するダイヤモンド量子技術研究センターは、高機能ダイヤモンド材料による生物医学応用のための量子センシングを実現する。また、光・電子スピンによる量子ネットワーク要素を実証する。ドイツチームはスピンのコヒーレント制御、量子ビット、フォトニック集積、表面化学に関する専門知識を、日本チームは独自に持つダイヤモンド合成の専門知識や生物医学用センシング応用、量子ネットワーク要素に関する経験を活用する。また両チームは、若手研究者がダイヤモンド量子技術の専門知識を習得できるよう体系化された教育システムを構築する。
固体量子センサによる海中磁場計測ネットワーク技術の開発

大島武

Offer Organization: 科学技術振興機構

System: 戦略的な研究開発の推進経済安全保障重要技術育成プログラム

Institution: 量子科学技術研究開発機構

2024 - 2029

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本研究開発では、将来的に音響センサとの連携による人工物の確実な検知を目指し、磁場の絶対値を計測可能、かつ温度変動による計測誤差を自己補償可能なダイヤモンド中の窒素-空孔(NV)量子センサを開発します。また、センサを複数配置した海中センサネットワークを構築し、得られたデータから人工物の位置を特定する解析ソフトウェアの開発を行います。さらに、ダイヤモンドNVのマルチモダル性を活かして、新たなpHセンシング原理の実証にも挑戦し、海底火山活動モニタリングに資する次世代海中センシング技術としてpHセンサユニットのシステム開発を目指します。
Realization of an entangled photon-pair emitting device using silicon carbide semiconductor

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Challenging Research (Pioneering)

Institution: Saitama University

2022/06/30 - 2025/03/31
Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS device

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Saitama University

2022/04/01 - 2025/03/31
Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS device

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Saitama University

2022/04/01 - 2025/03/31
Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tokyo Institute of Technology

2021/04/05 - 2024/03/31
Quantum state control with advanced optical technique for spin defects in silicon carbide

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: National Institutes for Quantum Science and Technology

2020/04/01 - 2023/03/31
Research on Silicon-Carbide IoT Platform for Harsh Environment Applications

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Hiroshima University

2020/04/01 - 2023/03/31
Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic properties

Matsushita Yu-ichiro

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tokyo Institute of Technology

2018/04/01 - 2021/03/31

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In this project, we propose a method to identify SiC-MOS interface defects and to reduce the defects at the SiC/SiO2 interface based on first-principles calculations. In this study, two candidate defects at the SiC-MOS interface were successfully identified: one is an intrinsic defect in SiC due to the wave function at the lower end of the conduction band of SiC, and the other is a carbon-related defect precipitated at the interface. In particular, we proposed an oxide film formation method without thermal oxidation as a method to propose carbon-related defects precipitated at the interface. The experimental results showed that the density of interfacial defects could be reduced to one-tenth.
Research on Silicon Carbide Harsh Environment Electronics

Kuroki Shin-Ichiro

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Hiroshima University

2017/04/01 - 2020/03/31

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The purpose of this research is to realize 4H-SiC CMOS integrated circuits for harsh environment applications. For this purpose, self-alignment gate trench 4H-SiC MOSFETs with short-channel were suggested and demonstrated. At the trench 4H-SiC n/p MOSFETs, parasitic capacitances between gate and source, gate and drain, were successfully reduced. And at the short channel devices, short-channel effects were suppressed. The channel field-effect mobility was also successfully enhanced by introducing BaO thin film in gate oxide/ SiC interface.
Quantum state measurements of single photon sources in silicon carbide devices

Ohshima Takeshi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: National Institutes for Quantum and Radiological Science and Technology

2017/04/01 - 2020/03/31

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In order to clarify the optical and spin properties of single photon sources (SPSs) in silicon carbide (SiC), and also to develop manipulation methods for those properties, a) we developed the position selective introduction method of SPSs in SiC devices and demonstrated magnetic field sensing using optically detected magnetic resonance (ODMR) in which spin manipulation is performed. b) We established basic technology on the quantum manipulation for SPSs such as spin and optical properties using operation of electronic device such as applying bias and injection of current. c) We obtained the information on the fabrication process of Nitrogen-vacancy center (NcVsi) and surface SPS of which atomic structure have not yet been identified, and also revealed the quantum properties of those SPSs.
The hydrogen occlusion materials high function in the defect design by the quantum beam irradiation

ABE Hiroshi, UCHIDA Hirohisa, DAIDO Hiroyuki, NISHIMURA Akihiko, OHSHIMA Takeshi, SYOUBU Takahisa, HARAKI Takeshi, SHIMOMURA Takuya, TOKUHIRA Shin-nosuke, SHIMADA Yukihiro, TAKENAKA Yusuke, FURUYAMA Yuta

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (C)

2014/04/01 - 2017/03/31

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The hydrogen storage system of measurement built electrolytic cell apparatus to plan hydrogen absorption material high function by giving surface modification, the surface activation of hydrogen absorption material by the quantum beam (ion, electron and laser) irradiation. We built the system that could measure initial hydrogen absorption reaction rate. As a result of having carried out various kinds of quantum beam irradiation, the hydrogen storage functionality by the irradiation was proved to improve in comparison with non-irradiation. The respective irradiation showed that the surface structure will be in the random state (disorder). It was discovered to the surface layer that defect introduction, formation of a rare earth oxidation film and the case that non-thermal process effect and the structure by the shock wave make them be disordered are the factor which improves the occlusion function.oxidation film, a non-heat processing effect and the shock wave.
Study of diamond thin film as a beam exit window to the atmosphere for high energy ions and a position-sensitivity detector

Kamiya Tomihiro, SATOH Takahiro, MOKUNO Yoshiaki

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

2014/04/01 - 2017/03/31

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As an exit window as well as a transmission position sensitive detector for high energy ions transmitted to atmosphere, a novel membrane device made of single crystal diamond has been developed. A test device was made and the ion-beam-induced charge (IBIC) or the time measured response (QTS) made a comprehensive evaluation. Watching the first IBIC measurement of ion incident position-dependent output signal. In addition and comparison between experimental and calculated deterioration characteristics associated with the increase in signal strength dose, proposed a new degradation parameter. The electrical activity of single crystal diamond semiconductor investigated by QTS. In addition confirmed new phenomenon due to the avalanche effect induced by ion beam generation charge amplifier.
Controlling of Photon and Spin of High Luminosity Single Photon Source in Silicon Carbide Competitive

OHSHIMA Takeshi

Offer Organization: JSPS

System: KAKENHI B

2014/04 - 2017/03
Development of wide gap semiconductor pixel detector for light dark matter search

Tanaka Manobu, KANEKO Junichi, SHIMAOKA Takehiro, OHSHIMA Takeshi, MAKINO Takakahiro, MIUCHI Kentaro

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (C)

Institution: High Energy Accelerator Research Organization

2013/04/01 - 2016/03/31

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We developed pixel detectors based on wide gap semiconductor materials(i.e. diamond and silicon carbide) for light dark matter search. The wide gap semiconductor containing carbon improves the sensitivity for light dark matter search. The electrode size of the detectors is about 100um x 100um. The detector shows two or three orders of magnitudes leakage reduction compared to a silicon pixel detector, and the detector capacitance of the diamond pixel is one half the silicon pixel detector. We confirmed developed pixel detectors have enough S/N for our purpose. In order to evaluate the detectors low noise front-end integrated circuit is developed.The equivalent noise charge(ENC) is less than 100 electron which satisfies S/N for our evaluation of the detectors.
半導体材料・素子の耐放射線性評価及び耐放射線性素子開発 Competitive

System: その他の研究制度

2005 - 2015

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・炭化ケイ素（SiC）を用いた耐放射線性素子の開発・宇宙用太陽電池、半導体の耐放射線性評価技術と耐性強化技術の開発
Controlling of Single Photon Source in Silicon Carbide

OHSHIMA Takeshi, UMEDA Takehide

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Challenging Exploratory Research

2012/04/01 - 2014/03/31

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In order to find new defects which act as single photon sources in Silicon Carbide (SiC), semi-insulating SiC wafers were irradiated with 2 MeV electrons and subsequently annealed in Argon at temperature ranges between 300 and 500 C. As a results, in addition to luminescence from Si vacancies (Vsi) which have been reported as single photon source in SiC, the very strong luminescence at wavelength regions between 670 and 700 nm were observed even at room temperature. By the photo luminescence measurements at low temperature, it was concluded that the origin of those luminescence is positively charged carbon antisite – carbon vacancy pair (CsiVc). Also, it was revealed from antibunching measurements using a confocal microscope that CsiVc act as single photon source in SiC.
量子コンピューティングのための半導体中の欠陥エンジニアリング Competitive

Offer Organization: 科学技術振興機構

System: 戦略的国際科学技術協力推進事業（共同研究型）

2009 - 2013/03

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・イオンや電子線照射を用いたダイヤモンド中のNVセンター形成技術
イオンビーム誘起電荷による炭化ケイ素半導体上の酸化膜破壊機構に関する研究 Competitive

大島武

Offer Organization: 日本学術振興会

System: 科学研究費基盤B

2009/04 - 2012/03
Experimental study on behavior and radiation effect of very high-energy particles in matters

NAKASHIMA Hiroshi, SHIBATA Tokushi, KASUGAI Yoshimi, SAKAMOTO Yukio, IWAMOTO Yosuke, MATSUDA Norihiro, OOSHIMA Takeshi, NAKAMURA Takashi, HIRAYAMA Hideo, BAN Shuichi, SANAMI Toshiya, SAKAMOTO Yukio, HAGIWARA Masayuki, IWASE Hiroshi, YASHIMA Hiroshi, SEKIMOTO Shun, OISHI Koji, ISHIBASHI Kenji, SHIGYO Nobuyuki

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Japan Atomic Energy Agency

2009 - 2011

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A series of experiment on radiation behavior and effects in matters with the secondary radiations generated by 120 GeV proton at high-energy accelerator facilities in Fermi National Accelerator Laboratory of U. S. A. Based on the data, high energy radiation transport calculation systems have been developed and basic study of estimation methods on radiation effects has been carried out for development of high energy accelerator facilities and study on radiation effects due to cosmic rays.
2キュービットゲートを用いた鎖状スケーラブル量子コンピュータの開発

磯谷順一, 谷口尚, 大島武

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 挑戦的萌芽研究

Institution: 筑波大学

2009 - 2009

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本研究は、「ダイヤモンド中のNVセンター(室温で初期化と単一スピン検出ができる)を鎖状に並べたスヶーラブル・室温動作の量子コンピュータの開発の前提」である、(1)核スピンをもたない同位体^<12>Cの濃縮と不純物窒素低減とにより、NVセンターのコヒーレンス時間が十分に長くできること、それにより(2)双極子双極子相互作用を用いて、2キュービットのCNOTゲートが実現できること、を実証することを目的とした。 ^<12>C99.7%、不純物窒素濃度[N]=0.05ppbのCVD単結晶でNVセンターのコヒーレンス時間T_2=1.8ms(室温)が得られたのに対して、^<12>C99.97%,[N]=0.6ppmのHPHT結晶中のNVセンターではT_2=0.17msで、[N]=0.6ppmの天然存在比の結晶と同じであった。上記のCVD単結晶では成長時導入のNVセンターについてT_2が測定されているのに対して、HPHT結晶では電子線照射・熱処理を用いてNVセンターを作成している。2キュービットのCNOTゲートの実証には、イオン注人で作成したNVセンターのペアーが、長いT_2をもつような作製プロセスが不可欠である。電子線照射やイオン注入で効率よくNVセンターを作成するとともに、コヒーレンス時間を短くする要因となる余分な欠陥を残さないために、高温の電子線照射や窒素イオン照射を行い、照射条件・熱処理条件を探索した。 ^<12>C99.97%濃縮した炭素源を用いて作成したHPHT結晶において不純物窒素の低減をはかり、[N]=35ppbのものが得られた。この結晶に、単一イオン入射マイクロイオンビーム技術を用い、同一ポイント(径～1μm)に数を制御した窒素イオン(10MeV)の照射を行った。碁盤目状に打ち込んだたくさんのポイントのなかから、NVセンターのペアーを探し出すことにより、CNOTゲートに使える距離のペアーとして存在するNVセンターのT_2を長くする指針が得られると考えられる。
Induced Charge Evaluation for the Development of Particle Detectors Fabricated on Silicon Carbide

OHSHIMA Takeshi, ONODA Shinobu, ITOH Hisayoshi, KAMIYA Tomihiro, SATOH Takahiro, NAKANO Itsuo

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Japan Atomic Energy Agency

2006 - 2008
Development of Luminescence Technique for Accurate Diagnostic Characterization of Semiconductor Materials for Solar Cells

TAJIMA Michio, IMAIZUMI Mitsuru, OHSHIMA Takeshi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (A)

Institution: Japan Aerospace Exploration Agency

2004 - 2006

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We have developed advanced techniques of photoluminescence (PL) and electroluminescence (EL) spectroscopy and their topography for an accurate diagnostic characterization of Si, InGaP_2/GaAs/Ge multi-junction (MJ) and Cu(In,Ga)Se_2 (CIGS) solar cells. PL is applicable to wafers without a cell structure, where the selective tuning of the excitation light is used to evaluate respective layers of multi-layered structures. The intensity of band-edge emission reflects the crystalline quality, since the intensity is proportional to the minority carrier lifetime. Analysis of deep-level emission enables us to identify the origin of the defects. Luminescence topography is useful to investigate the uniformity of the cells as well as the distribution of defects within them. PL and EL imaging with a highly sensitive CCD camera are particularly powerful for rapid and wide-area inspection of the cells. We have invented an ultra high-speed characterization technique for crystalline quality of multicrystalline Si (mc-Si) wafers which have 60% market share of solar cells. Images of band-edge emission from mc-Si wafers were taken by a cooled CCD camera within l s with the wafers immersed in a HF solution and excited by light-emitting-diode arrays. The present imaging technique is about ten thousand times faster and ten times higher in spatial resolution than conventional electrical characterization methods. We have demonstrated that the luminescence technique has great advantages of high sensitivity, high spatial resolution, high speed, noncontact and nondestructiveness, and that the technique is a powerful tool for characterizing semiconductor materials for solar cells.
半導体電子スピン系量子コンピュータの要素技術の開発

磯谷順一, 梅田享英, 水落憲和, 大島武

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 特定領域研究

Institution: 筑波大学

2004 - 2005

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固体素子量子コンピュータのうち、ビットの選択や論理ゲートの方式が提案されている半導体中のドナーを対象に、母結晶やドナーの種類を変えて、位相記憶時間(T_M)・スピン格子緩和時間(T_1)の温度依存性・ドナー濃度依存性・同種体組成依存性から、コヒーレンス持続時間を決める機構を明らかにした。電子スピンを用いる量子コンピュータで必要とされる〜100μsを超えるT_Mを、より高い温度領域で得るには、バレー・軌道相互作用による励起状態のOrbach過程によるスピン格子緩和がより高い温度領域で凍結することと、核スピンを持つ同位体の存在比が低い元素からなる半導体結晶の選択により核スピンのフリップ・フロップによる位相緩和を抑えることが重要であることが明らかになった。新しいドナーとして、3C-SiC、4H-SiC、6H-SiC中のシリコンを置換した燐ドナー及びダイヤモンド中の燐ドナーのESRスペクトルを見出したが、バレー・軌道相互作用による励起状態が近接するために、4H-SiC、6H-SiC中の窒素ドナーのような高い温度領域での長いT_Mは得られなかった。ドナーを量子ビットに用いる提案は、ゲートに加える電圧により、ドナー電子の共鳴周波数を変化させることによりビットを選択すること、および、2つのドナーの電子雲のオーバーラップのON/OFF(交換相互作用のON/OFF)により論理ゲートが構成できることに基づいている。シリコン中の燐ドナーについて、電場印加による超微細相互作用の変化の実証を試みた。10kV/cmを超える電界を加えたが、線幅を越える^<31>P超微細相互分裂の大きさの変化は検出されなかった。アンサンブル系ESR量子コンピュータの2ビット論理ゲートのデモンストレーションに向けたパルス技術の問題点の洗い出しと現状の技術に見合う試料の選択を行った。
Radiation Effects on Semiconductor materials and devices Competitive

System: The Other Research Programs

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