Details of the Researcher

PHOTO

Yuta Saito
Section
Green Goals Initiative
Job title
Professor
Degree
  • 博士(工学)(東北大学)

  • 修士(工学)(東北大学)

e-Rad No.
50738052
Researcher ID

Research History 10

  • 2023/11 - Present
    Tohoku University

  • 2023/11 - Present
    Tohoku University Research Center for Green X-Tech Professor

  • 2023/04 - 2023/10
    National Institute of Advanced Industrial Science and Technology Group Leader

  • 2022/04 - 2023/03
    National Institute of Advanced Industrial Science and Technology Research Planner

  • 2018/10 - 2022/03
    National Institute of Advanced Industrial Science and Technology Senior Researcher

  • 2018/04 - 2018/09
    National Institute of Advanced Industrial Science and Technology Researcher

  • 2017/04 - 2018/03
    University of Cambridge Visiting Researcher

  • 2014/04 - 2017/03
    National Institute of Advanced Industrial Science and Technology Researcher

  • 2013/04 - 2014/03
    National Institute of Advanced Industrial Science and Technology Post-doc Researcher

  • 2010/04 - 2013/03
    Tohoku University

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Education 3

  • 東北大学大学院 工学研究科 知能デバイス材料学専攻 博士課程

    2010/04 - 2013/03

  • 東北大学大学院 工学研究科 知能デバイス材料学専攻 修士課程

    2008/04 - 2010/03

  • Tohoku University

    2004/04 - 2008/03

Committee Memberships 7

  • 公益社団法人 日本金属学会 調査研究委員

    2025/04 - Present

  • 公益社団法人 日本金属学会 講演大会委員

    2021/04 - Present

  • 公益社団法人 日本金属学会 会報誌「まてりあ」編集委員

    2021/03 - Present

  • 相変化研究会 (PCOS) 幹事

    2016/04 - Present

  • Electrochemical Society (ECS), Non-volatile memory Symposium, Symposium Organizer

    2016/04 - 2020/10

  • 2017 Materials Research Society (MRS) Spring Meeting & Exhibit, Symposium Organizer

    2016/04 - 2017/04

  • 2016 Materials Research Society (MRS) Spring Meeting & Exhibit, Symposium Organizer

    2015/04 - 2016/04

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Professional Memberships 3

  • Materials Research Society

  • THE JAPAN INSTITUTE OF METALS

  • THE JAPAN SOCIETY OF APPLIED PHYSICS

Research Interests 13

  • 放射光測定

  • トランジスタ

  • 電子材料

  • 2次元材料

  • 結晶化

  • アモルファス

  • 相変化メモリ

  • 層状物質

  • トポロジカル絶縁体

  • 第一原理計算

  • Superlattice

  • Chalcogenide thin film

  • Phase change material

Research Areas 1

  • Nanotechnology/Materials / Inorganic materials /

Awards 8

  1. 令和7年度科学技術分野の文部科学大臣表彰 若手科学者賞

    2025/04 文部科学省 「カルコゲナイド系電子デバイス材料の研究」

  2. 第46回本多記念研究奨励賞

    2025/02 公益財団法人 本多記念会 「カルコゲナイド薄膜材料の設計・高品質成膜・電子デバイス応用に関する研究」

  3. 第14回日本金属学会まてりあ論文賞

    2024/09 公益社団法人日本金属学会 「層状カルコゲナイドが拓く電子デバイス材料の新展開」

  4. 第19回 日本金属学会村上奨励賞

    2022/09 公益社団法人 日本金属学会 「機能性カルコゲナイド薄膜の材料評価とデバイス応用に関する研究」

  5. 日本金属学会奨励賞[物性部門]

    2019/09 公益社団法人 日本金属学会 「新規カルコゲナイド相変化材料の開発とその実用化研究」

  6. 応用物理学会講演奨励賞

    2019/03 公益社団法人 応用物理学会 「不揮発性メモリ用遷移金属相変化材料の電子構造の解明」

  7. Materia Paper Award

    2016/09 The Japan Institute of Metals and Materials

  8. EPCOS2014 Best Presentation Award

    2014/09

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Papers 117

  1. Crystalline phase dependence of the inverse spin Hall effect in Sb2Te3/CoFeB bilayers

    Misako Morota, Wipakorn Jevasuwan, Hiroyasu Nakayama, Naoki Fukata, Yuta Saito

    APL Materials 2025/08/01

    DOI: 10.1063/5.0276308  

  2. Realization of ideal Ohmic contact to n-Ge: The key roles of Ge-Bi-Te for quasi-van der Waals interface formation

    Wen Hsin Chang, Shogo Hatayama, Naoya Okada, Toshifumi Irisawa, Yuta Saito

    APL Materials 2025/07/01

    DOI: 10.1063/5.0278628  

  3. Room temperature ferromagnetism in polymorphic (Cr,Mn)Te films

    Mihyeon Kim, Ryoga Nakajima, Takashi Harumoto, Yi Shuang, Daisuke Ando, Nobuki Tezuka, Yuta Saito, Yuji Sutou

    APL Materials 2025/06/01

    DOI: 10.1063/5.0266675  

  4. Unveiling the Significant Role of Schottky Interfaces for Threshold Voltage in Ovonic Threshold Switching

    Shogo Hatayama, Keisuke Hamano, Yi Shuang, Mihyeon Kim, Paul Fons, Yuta Saito

    ACS Applied Electronic Materials 2025/03/25

    DOI: 10.1021/acsaelm.5c00292  

  5. Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe<inf>5</inf>

    Yi Shuang, Yuta Saito, Shogo Hatayama, Paul Fons, Ando Daisuke, Yuji Sutou

    Journal of Materials Science and Technology 210 246-253 2025/03/01

    DOI: 10.1016/j.jmst.2024.05.039  

    ISSN: 1005-0302

  6. Thermally stable Bi<inf>2</inf>Te<inf>3</inf>/WSe<inf>2</inf> Van Der Waals contacts for pMOSFETs application

    Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa

    Scientific Reports 14 (1) 2024/12

    DOI: 10.1038/s41598-024-79750-z  

    eISSN: 2045-2322

  7. Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

    Yi Shuang, Shunsuke Mori, Takuya Yamamoto, Shogo Hatayama, Yuta Saito, Paul J. Fons, Yun-Heub Song, Jin-Pyo Hong, Daisuke Ando, Yuji Sutou

    ACS Nano 2024/08/01

    Publisher: American Chemical Society (ACS)

    DOI: 10.1021/acsnano.4c03574  

    ISSN: 1936-0851

    eISSN: 1936-086X

  8. Interfacial reaction behavior between ferromagnetic CoFeB and the topological insulator Sb<inf>2</inf>Te<inf>3</inf>

    Misako Morota, Shogo Hatayama, Yi Shuang, Shunsuke Mori, Yuji Sutou, Paul Fons, Yuta Saito

    Surfaces and Interfaces 51 2024/08

    DOI: 10.1016/j.surfin.2024.104486  

    ISSN: 2468-0230

  9. Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

    Shogo Hatayama, Kotaro Makino, Yuta Saito

    Scientific Reports 2024/04/17

    DOI: 10.1038/s41598-024-59235-9  

  10. Modified Electronic Structure of Amorphous Mn–Si–Te for Ovonic Threshold Switch Application: Improved Thermal Stability by the Formation of Mn–Te Bonding

    Kentaro Saito, Shogo Hatayama, Yuta Saito

    physica status solidi (RRL) – Rapid Research Letters 2024/03/13

    DOI: 10.1002/pssr.202300474  

  11. Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions

    Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Toshifumi Irisawa

    Applied Physics Express 2024/03/01

    DOI: 10.35848/1882-0786/ad2d75  

  12. Coherent optical response driven by non-equilibrium electron–phonon dynamics in a layered transition-metal dichalcogenide

    Takumi Fukuda, Kotaro Makino, Yuta Saito, Paul Fons, Atsushi Ando, Takuya Mori, Ryo Ishikawa, Keiji Ueno, Jessica Afalla, Muneaki Hase

    APL Materials 2024/02/01

    DOI: 10.1063/5.0188537  

  13. Nonvolatile Isomorphic Valence Transition in SmTe Films

    Shogo Hatayama, Shunsuke Mori, Yuta Saito, Paul J. Fons, Yi Shuang, Yuji Sutou

    ACS Nano 2024/01/30

    DOI: 10.1021/acsnano.3c07960  

  14. Origins of midgap states in Te-based Ovonic threshold switch materials

    Shogo Hatayama, Yuta Saito, Paul Fons, Yi Shuang, Mihyeon Kim, Yuji Sutou

    Acta Materialia 258 2023/10/01

    DOI: 10.1016/j.actamat.2023.119209  

    ISSN: 1359-6454

  15. NbTe<inf>4</inf> Phase-Change Material: Breaking the Phase-Change Temperature Balance in 2D Van der Waals Transition-Metal Binary Chalcogenide

    Yi Shuang, Qian Chen, Mihyeon Kim, Yinli Wang, Yuta Saito, Shogo Hatayama, Paul Fons, Daisuke Ando, Momoji Kubo, Yuji Sutou

    Advanced Materials 35 (39) 2023/09/27

    DOI: 10.1002/adma.202303646  

    ISSN: 0935-9648

    eISSN: 1521-4095

  16. All-Optical Rapid Formation, Transport, and Sustenance of a Sessile Droplet in a Two-Dimensional Slit with Few-Micrometer Separation

    Yuka Takamatsu, Chizuru Yamato, Masashi Kuwahara, Yuta Saito, Toshiharu Saiki

    Micromachines 2023/07/21

    DOI: 10.3390/mi14071460  

  17. Tunable pheromone interactions among microswimmers

    Bokusui Nakayama, Hikaru Nagase, Hiromori Takahashi, Yuta Saito, Shogo Hatayama, Kotaro Makino, Eiji Yamamoto, Toshiharu Saiki

    Proceedings of the National Academy of Sciences of the United States of America 120 (9) 2023/02/28

    DOI: 10.1073/pnas.2213713120  

    ISSN: 0027-8424

    eISSN: 1091-6490

  18. Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

    Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons

    Materials Horizons 10 (6) 2254-2261 2023

    DOI: 10.1039/D2MH01449A  

    ISSN: 2051-6347

    eISSN: 2051-6355

  19. Sb<inf>2</inf>Te<inf>3</inf>/MoS<inf>2</inf> Van der Waals Junctions with High Thermal Stability and Low Contact Resistance

    Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa

    Advanced Electronic Materials 9 (4) 2023

    DOI: 10.1002/aelm.202201091  

    eISSN: 2199-160X

  20. An isomorphic valency transition in SmTe film enabling nonvolatile resistive change

    Shogo Hatayama, Shunsuke Mori, Yuta Saito, Paul Fons, Yi Shuang, Yuji Sutou

    2022/11/30

    DOI: 10.21203/rs.3.rs-2318820/v1  

  21. Photo‐Induced Tellurium Segregation in MoTe 2

    Takumi Fukuda, Ryota Kaburauchi, Yuta Saito, Kotaro Makino, Paul Fons, Keiji Ueno, Muneaki Hase

    physica status solidi (RRL) – Rapid Research Letters 16 (9) 2100633-2100633 2022/06/11

    Publisher: Wiley

    DOI: 10.1002/pssr.202100633  

    ISSN: 1862-6254

    eISSN: 1862-6270

  22. Improved Ordering of Quasi-Two-Dimensional MoS2 via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS2+x

    Milos Krbal, Vit Prokop, Jan Prikryl, Jhonatan Rodriguez Pereira, Igor Pis, Alexander V. Kolobov, Paul J. Fons, Yuta Saito, Shogo Hatayama, Yuji Sutou

    Crystal Growth & Design 22 (5) 3072-3079 2022/04/12

    Publisher: American Chemical Society ({ACS})

    DOI: 10.1021/acs.cgd.1c01504  

    ISSN: 1528-7483

    eISSN: 1528-7505

  23. The formation of a one-dimensional van der Waals selenium crystal from the three-dimensional amorphous phase: A spectroscopic signature of van der Waals bonding

    Milos Krbal, Alexander V. Kolobov, Paul Fons, Yuta Saito, George Belev, Safa Kasap

    Applied Physics Letters 2022/01/17

    DOI: 10.1063/5.0080133  

  24. Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

    Shogo Hatayama, Yuta Saito, Kotaro Makino, Noriyuki Uchida, Yi Shuang, Shunsuke Mori, Yuji Sutou, Milos Krbal, Paul Fons

    Journal of Materials Chemistry C 10 (29) 10627-10635 2022

    Publisher: Royal Society of Chemistry (RSC)

    DOI: 10.1039/d2tc01281b  

    ISSN: 2050-7526

    eISSN: 2050-7534

    More details Close

    The crystallization mechanism of sputter-deposited amorphous Mo–Te film is revealed enabling the large-area growth of 2D materials.

  25. Amorphous Hf–O–Te as a selector via a modified conduction mechanism by Te content control

    Shogo Hatayama, Yuta Saito, Noriyuki Uchida

    APL Materials 10 (1) 2022/01/01

    DOI: 10.1063/5.0076942  

    eISSN: 2166-532X

  26. Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials

    Yuta Saito, Misako Morota, Kotaro Makino, Junji Tominaga, Alexander V. Kolobov, Paul Fons

    Materials Science in Semiconductor Processing 135 106079-106079 2021/11

    DOI: 10.1016/j.mssp.2021.106079  

    ISSN: 1369-8001

    eISSN: 1873-4081

  27. Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices

    Milos Krbal, Vit Prokop, Alexey A. Kononov, Jhonatan Rodriguez Pereira, Jan Mistrik, Alexander V. Kolobov, Paul J. Fons, Yuta Saito, Shogo Hatayama, Yi Shuang, Yuji Sutou, Stepan A. Rozhkov, Jens R. Stellhorn, Shinjiro Hayakawa, Igor Pis, Federica Bondino

    ACS Applied Nano Materials 4 (9) 8834-8844 2021/09/24

    DOI: 10.1021/acsanm.1c01504  

    ISSN: 2574-0970

  28. Polymorphism of CdTe in the Few-Monolayer Limit

    Alexander V. Kolobov, Vladimir G. Kuznetsov, Paul Fons, Yuta Saito, Dmitriy I. Elets, Berangere Hyot

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2021/09

    DOI: 10.1002/pssr.202100358  

    ISSN: 1862-6254

    eISSN: 1862-6270

  29. Understanding the low resistivity of the amorphous phase of Cr2Ge2Te6 phase-change material: Experimental evidence for the key role of Cr clusters

    Shogo Hatayama, Keisuke Kobayashi, Yuta Saito, Paul Fons, Yi Shuang, Shunsuke Mori, Alexander V. Kolobov, Yuji Sutou

    Physical Review Materials 5 (8) 2021/08

    DOI: 10.1103/PhysRevMaterials.5.085601  

    eISSN: 2475-9953

  30. Evolution of the local structure surrounding nitrogen atoms upon the amorphous to crystalline phase transition in nitrogen-doped Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> phase-change material

    Yi Shuang, Shogo Hatayama, Yuta Saito, Paul Fons, Alexander V. Kolobov, Daisuke Ando, Yuji Sutou

    Applied Surface Science 556 2021/08/01

    DOI: 10.1016/j.apsusc.2021.149760  

    ISSN: 0169-4332

  31. Enhancement of Spin Pumping from CoFeB to Sb 2 Te 3 Layers by Crystal Orientation Control

    Misako Morota, Yuta Saito, Noriyuki Uchida

    physica status solidi (RRL) – Rapid Research Letters 15 (9) 2100247-2100247 2021/07/14

    DOI: 10.1002/pssr.202100247  

    ISSN: 1862-6254

    eISSN: 1862-6270

  32. Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

    A. A. Kononov, R. A. Castro, Y. Saito, P. Fons, G. A. Bordovsky, N. I. Anisimova, A. V. Kolobov

    Journal of Materials Science: Materials in Electronics 2021/05/08

    Publisher: Springer Science and Business Media {LLC}

    DOI: 10.1007/s10854-021-05986-4  

  33. Chalcogenide Materials Engineering for Phase‐Change Memory and Future Electronics Applications: From Sb–Te to Bi–Te

    Yuta Saito, Kirill V. Mitrofanov, Kotaro Makino, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Fumihiko Uesugi, Masaki Takeguchi

    physica status solidi (RRL) – Rapid Research Letters 15 (3) 2000414-2000414 2021/03/15

    Publisher: Wiley

    DOI: 10.1002/pssr.202000414  

    ISSN: 1862-6254

    eISSN: 1862-6270

  34. Crystalline Sb2Te3: Side Surfaces and Disappearance of Dirac Cones

    Alexander V. Kolobov, Paul Fons, Yuta Saito

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 15 (3) 2021/03

    DOI: 10.1002/pssr.202000418  

    ISSN: 1862-6254

    eISSN: 1862-6270

  35. Electric Fields and Interfacial Phase-Change Memory Structures

    Paul Fons, Alexander V. Kolobov, Yuta Saito

    Physica Status Solidi - Rapid Research Letters 15 (3) 2021/03

    DOI: 10.1002/pssr.202000412  

    ISSN: 1862-6254

    eISSN: 1862-6270

  36. Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material

    Yuta Saito, Shogo Hatayama, Yi Shuang, Paul Fons, Alex, er V. Kolobov, Yuji Sutou

    Scientific Reports 11 (1) 2021/03

    Publisher: Springer Science and Business Media {LLC}

    DOI: 10.1038/s41598-020-80301-5  

    ISSN: 2045-2322

    eISSN: 2045-2322

  37. Ultrafast scattering dynamics of coherent phonons in Bi1−x Sb x in the Weyl semimetal phase

    Yuta Komori, Yuta Saito, Paul Fons, Muneaki Hase

    New Journal of Physics 23 (2) 023034-023034 2021/02/01

    DOI: 10.1088/1367-2630/abe2c0  

    ISSN: 1367-2630

  38. Low-frequency dielectric relaxation in amorphous MoTe<inf>2</inf>layers obtained by RF magnetron sputtering

    Rene Castro, Sergej Khachaturov, Aleksei Kononov, Yuta Saito, Paul Fons, Nadezhda Anisimova, Alexander Kolobov

    AIP Conference Proceedings 2308 2020/12/01

    DOI: 10.1063/5.0033533  

    ISSN: 0094-243X

    eISSN: 1551-7616

  39. Dielectric relaxation in the GeSb<inf>2</inf>Te<inf>4</inf>phase-change material

    Aleksei Kononov, Yuta Saito, Paul Fons, Junji Tominaga, Nadezhda Anisimova, Alexander Kolobov

    AIP Conference Proceedings 2308 2020/12/01

    DOI: 10.1063/5.0033358  

    ISSN: 0094-243X

    eISSN: 1551-7616

  40. Dielectric Relaxation and Charge Transfer in Amorphous MoS<inf>2</inf> Thin Films

    Aleksei A. Kononov, Rene A. Castro, Diana D. Glavnaya, Nadezhda I. Anisimova, Gennady A. Bordovsky, Alexander V. Kolobov, Yuta Saito, Paul Fons

    Physica Status Solidi (B) Basic Research 257 (11) 2020/11

    DOI: 10.1002/pssb.202000114  

    ISSN: 0370-1972

    eISSN: 1521-3951

  41. Structural Metastability in Chalcogenide Semiconductors: The Role of Chemical Bonding

    Alexander V. Kolobov, Yuta Saito, Paul Fons, Milos Krbal

    Physica Status Solidi (B) Basic Research 257 (11) 2020/11

    DOI: 10.1002/pssb.202000138  

    ISSN: 0370-1972

    eISSN: 1521-3951

  42. The importance of contacts in Cu2GeTe3 phase change memory devices

    Satoshi Shindo, Yi Shuang, Shogo Hatayama, Yuta Saito, Paul Fons, Alexander V. Kolobov, Keisuke Kobayashi, Yuji Sutou

    Journal of Applied Physics 128 (16) 2020/10/28

    DOI: 10.1063/5.0019269  

    ISSN: 0021-8979

    eISSN: 1089-7550

  43. The effect of ion irradiation on dephasing of coherent optical phonons in GaP

    Takuto Ichikawa, Yuta Saito, Muneaki Hase

    AIP Advances 10 (10) 2020/10/01

    DOI: 10.1063/5.0020810  

    eISSN: 2158-3226

  44. High-quality sputter-grown layered chalcogenide films for phase change memory applications and beyond Peer-reviewed

    Yuta Saito, Paul Fons, Alexander V Kolobov, Kirill V Mitrofanov, Kotaro Makino, Junji Tominaga, Shogo Hatayama, Yuji Sutou, Muneaki Hase, John Robertson

    Journal of Physics D: Applied Physics 53 (28) 2020/07/08

    DOI: 10.1088/1361-6463/ab850b  

    ISSN: 0022-3727

    eISSN: 1361-6463

  45. Effects of electric and magnetic fields on the resistive switching operation of iPCM

    K. V. Mitrofanov, Y. Saito, N. Miyata, P. Fons, A. V. Kolobov, J. Tominaga

    Applied Physics Letters 116 (20) 2020/05/18

    DOI: 10.1063/1.5135608  

    ISSN: 0003-6951

  46. Polarization Processes in Thin Layers of Amorphous MoS<inf>2</inf> Obtained by RF Magnetron Sputtering

    A. A. Kononov, R. A. Castro-Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Y. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov

    Semiconductors 54 (5) 558-562 2020/05/01

    DOI: 10.1134/S1063782620050073  

    ISSN: 1063-7826

    eISSN: 1090-6479

  47. Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering Peer-reviewed

    Yuta Saito

    Semiconductors 54 (2) 201-204 2020/02

    DOI: 10.1134/s106378262002013x  

    ISSN: 1090-6479

    eISSN: 1090-6479

  48. Dielectric relaxation and photo-electromotive force in Ge-Sb-Te/Si structures

    R. A. Castro-Arata, M. A. Goryaev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov

    PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology 146-150 2020

  49. Ultrafast dynamics of the low frequency shear phonon in 1T′- MoTe 2 Peer-reviewed

    Fukuda, T., Makino, K., Saito, Y., Fons, P., Kolobov, A.V., Ueno, K., Hase, M.

    Applied Physics Letters 116 (9) 2020

    DOI: 10.1063/1.5143485  

    ISSN: 0003-6951

  50. Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory Peer-reviewed

    Yuta Saito, Paul Fons, Kirill V. Mitrofanov, Kotaro Makino, Junji Tominaga, John Robertson, Alexander V. Kolobov

    Pure and Applied Chemistry 91 (11) 1777-1786 2019/11/26

    DOI: 10.1515/pac-2019-0105  

    ISSN: 0033-4545

    eISSN: 1365-3075

  51. Photon energy dependence of Kerr rotation in GeTe/Sb2Te3 chalcogenide superlattices Peer-reviewed

    Takara Suzuki, Richarj Mondal, Yuta Saito, Paul Fons, Alexander V Kolobov, Junji Tominaga, Hidemi Shigekawa, Muneaki Hase

    Journal of Physics: Condensed Matter 31 (41) 2019/10/16

    DOI: 10.1088/1361-648X/ab2e9f  

    ISSN: 0953-8984

    eISSN: 1361-648X

  52. Switching of the Optical Properties of Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> Phase Change Material in the Terahertz Frequency Region Peer-reviewed

    Kotaro Makino, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano, Makoto Nakajima

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019-September 2019/09

    DOI: 10.1109/IRMMW-THz.2019.8873769  

    ISSN: 2162-2027

    eISSN: 2162-2035

  53. High-Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability Peer-reviewed

    Kirill V. Mitrofanov, Yuta Saito, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

    Physica Status Solidi - Rapid Research Letters 13 (8) 2019/08

    DOI: 10.1002/pssr.201900105  

    ISSN: 1862-6254

    eISSN: 1862-6270

  54. Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications Peer-reviewed

    Yuta Saito, Shogo Hatayama, Yi Shuang, Satoshi Shindo, Paul Fons, Alexander V. Kolobov, Keisuke Kobayashi, Yuji Sutou

    Applied Physics Express 12 (5) 2019/05/01

    DOI: 10.7567/1882-0786/ab1301  

    ISSN: 1882-0778

    eISSN: 1882-0786

  55. Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing Peer-reviewed

    Yuta Saito, Alexander V. Kolobov, Paul Fons, Kirill V. Mitrofanov, Kotaro Makino, Junji Tominaga, John Robertson

    Applied Physics Letters 114 (13) 2019/04

    DOI: 10.1063/1.5088068  

    ISSN: 0003-6951

  56. Transient Fano Resonance in topological insulators observed by coherent phonon spectroscopy

    Richarj Mondal, Akira Arai, Yuta Saito, Paul Fons, Alexander Kolobov, Junji Tominaga, Muneaki Hase

    XXI INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA 2018 (UP 2018) 205 2019

    DOI: 10.1051/epjconf/201920504021  

    ISSN: 2100-014X

  57. Dynamics of long-lifetime coherent phonon in MoTe2

    Kotaro Makino, Yuta Saito, Paul Fons, Alexander V. Kolobov, Keiji Ueno, Muneaki Hase

    Optics InfoBase Conference Papers Part F146-JSAP 2019 2019

  58. Terahertz spectroscopic characterization of Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> phase change materials for photonics applications Peer-reviewed

    Kotaro Makino, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano, Makoto Nakajima

    Journal of Materials Chemistry C 7 (27) 8209-8215 2019

    DOI: 10.1039/c9tc01456j  

    ISSN: 2050-7534

    eISSN: 2050-7526

  59. Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change materials for photonics applications Peer-reviewed

    Kotaro Makino, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano, Makoto Nakajima

    Journal of Materials Chemistry C 7 (27) 8209-8215 2019

    DOI: 10.1039/C9TC01456J  

    ISSN: 2050-7526

  60. Terahertz generation measurements of multilayered GeTe–Sb <inf>2</inf> Te <inf>3</inf> phase change materials Peer-reviewed

    Kotaro Makino, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano, Makoto Nakajima

    Optics Letters 44 (6) 1355-1358 2019

    DOI: 10.1364/OL.44.001355  

    ISSN: 0146-9592

    eISSN: 1539-4794

  61. Cr-Triggered Local Structural Change in Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> Phase Change Material Peer-reviewed

    Hatayama, S., Shuang, Y., Fons, P., Saito, Y., Kolobov, A.V., Kobayashi, K., Shindo, S., Ando, D., Sutou, Y.

    ACS Applied Materials and Interfaces 11 (46) 43320-43329 2019

    DOI: 10.1021/acsami.9b11535  

    ISSN: 1944-8244

    eISSN: 1944-8252

  62. Significant Volume Expansion as a Precursor to Ablation and Micropattern Formation in Phase Change Material Induced by Intense Terahertz Pulses Peer-reviewed

    Kotaro Makino, Kosaku Kato, Keisuke Takano, Yuta Saito, Junji Tominaga, Takashi Nakano, Goro Isoyama, Makoto Nakajima

    Scientific Reports 8 (1) 2018/12/01

    DOI: 10.1038/s41598-018-21275-3  

    ISSN: 2045-2322

    eISSN: 2045-2322

  63. A cascading nonlinear magneto-optical effect in topological insulators Peer-reviewed

    Richarj Mondal, Yuta Saito, Yuki Aihara, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Shuichi Murakami, Muneaki Hase

    Scientific Reports 8 (1) 2018/12/01

    DOI: 10.1038/s41598-018-22196-x  

    ISSN: 2045-2322

    eISSN: 2045-2322

  64. Damage and Micropattem Formation in Ge-Sb-Te Phase Change Materials Induced by Intense Terahertz Pulse Train Peer-reviewed

    Kotaro Makino, Kosaku Kato, Keisuke Takano, Yuta Saito, Junji Tominaga, Takashi Nakano, Goro Isoyarna, Makoto Nakajima

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2018-September 2018/10/25

    DOI: 10.1109/IRMMW-THz.2018.8510045  

    ISSN: 2162-2027

    eISSN: 2162-2035

  65. Zener Tunneling Breakdown in Phase-Change Materials Revealed by Intense Terahertz Pulses Peer-reviewed

    Yasuyuki Sanari, Takehiro Tachizaki, Yuta Saito, Kotaro Makino, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Koichiro Tanaka, Yoshihiko Kanemitsu, Muneaki Hase, Hideki Hirori

    Physical Review Letters 121 (16) 2018/10/19

    DOI: 10.1103/PhysRevLett.121.165702  

    ISSN: 0031-9007

    eISSN: 1079-7114

  66. All-Optical Detection of Periodic Structure of Chalcogenide Superlattice Using Coherent Folded Acoustic Phonons Peer-reviewed

    Takara Suzuki, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Muneaki Hase

    Physica Status Solidi - Rapid Research Letters 12 (9) 2018/09

    DOI: 10.1002/pssr.201800246  

    ISSN: 1862-6254

    eISSN: 1862-6270

  67. Topological Phase Buried in a Chalcogenide Superlattice Monitored by Helicity-Dependent Kerr Measurement Peer-reviewed

    Richarj Mondal, Yuki Aihara, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Muneaki Hase

    ACS Applied Materials and Interfaces 10 (31) 26781-26786 2018/08/08

    DOI: 10.1021/acsami.8b07974  

    ISSN: 1944-8244

    eISSN: 1944-8252

  68. Understanding the fast phase-change mechanism of tetrahedrally bonded Cu2GeTe3: Comprehensive analyses of electronic structure and transport phenomena Peer-reviewed

    Keisuke Kobayashi, Jonathan M. Skelton, Yuta Saito, Satoshi Shindo, Masaaki Kobata, Paul Fons, Alexander V. Kolobov, Stephen Elliott, Daisuke Ando, Yuji Sutou

    Physical Review B 97 (19) 2018/05/03

    DOI: 10.1103/PhysRevB.97.195105  

    ISSN: 2469-9950

    eISSN: 2469-9969

  69. Resistive switching characteristics of interfacial phase-change memory at elevated temperature Peer-reviewed

    Kirill V. Mitrofanov, Yuta Saito, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

    Japanese Journal of Applied Physics 57 (4) 2018/04

    DOI: 10.7567/JJAP.57.04FE06  

    ISSN: 0021-4922

    eISSN: 1347-4065

  70. Direct transition of a HfGeTe<inf>4</inf> ternary transition-metal chalcogenide monolayer with a zigzag van der Waals gap Peer-reviewed

    Yuta Saito, John Robertson

    APL Materials 6 (4) 2018/04

    DOI: 10.1063/1.5023577  

    ISSN: 2166-532X

    eISSN: 2166-532X

  71. Coherent Dirac plasmons in topological insulators Peer-reviewed

    Richarj Mondal, Akira Arai, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Muneaki Hase

    Physical Review B 97 (14) 2018/04

    DOI: 10.1103/PhysRevB.97.144306  

    ISSN: 2469-9950

    eISSN: 2469-9969

  72. Inverse Resistance Change Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf>-Based PCRAM Enabling Ultralow-Energy Amorphization Peer-reviewed

    Shogo Hatayama, Yuji Sutou, Satoshi Shindo, Yuta Saito, Yun Heub Song, Daisuke Ando, Junichi Koike

    ACS Applied Materials and Interfaces 10 (3) 2725-2734 2018/01/24

    DOI: 10.1021/acsami.7b16755  

    ISSN: 1944-8244

    eISSN: 1944-8252

  73. Sputter growth of chalcogenide superlattice films for future phase change memory applications Peer-reviewed

    Yuta Saito, Kirill V. Mitrofanov, Kotaro Makino, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

    ECS Transactions 86 (3) 49-54 2018

    DOI: 10.1149/08603.0049ecst  

    ISSN: 1938-6737

    eISSN: 1938-5862

  74. Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb3 Superlattices Peer-reviewed

    A. V. Kolobov, P. Fons, Y. Saito, J. Tominaga

    MRS Advances 3 (57-58) 3413-3418 2018

    DOI: 10.1557/adv.2018.444  

    eISSN: 2059-8521

  75. Variations in Electric Switching and Transverse Resistance of GeTe/Sb<inf>2</inf>Te<inf>3</inf> Superlattices at Elevated Temperature Studied by Conductive Scanning Probe Microscopy Peer-reviewed

    Leonid Bolotov, Yuta Saito, Tetsuya Tada, Junji Tominaga

    MRS Advances 3 (5) 241-246 2018

    DOI: 10.1557/adv.2018.241  

    ISSN: 2059-8521

    eISSN: 2059-8521

  76. Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures Peer-reviewed

    Yuta Saito, Paul Fons, Kotaro Makino, Kirill V. Mitrofanov, Fumihiko Uesugi, Masaki Takeguchi, Alexander V. Kolobov, Junji Tominaga

    Nanoscale 9 (39) 15115-15121 2017/10/31

    DOI: 10.1039/c7nr04709f  

    ISSN: 2040-3364

    eISSN: 2040-3372

  77. A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb<inf>2</inf>Te<inf>3</inf> Chalcogenide Superlattices Peer-reviewed

    Junji Tominaga, Yuta Saito, Kirill Mitrofanov, Nobuki Inoue, Paul Fons, Alexander V. Kolobov, Hisao Nakamura, Noriyuki Miyata

    Advanced Functional Materials 27 (40) 2017/10/26

    DOI: 10.1002/adfm.201702243  

    ISSN: 1616-301X

    eISSN: 1616-3028

  78. Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb<inf>2</inf>Te<inf>3</inf> Superlattices Peer-reviewed

    Alexander V. Kolobov, Paul Fons, Yuta Saito, Junji Tominaga

    ACS Omega 2 (9) 6223-6232 2017/09/30

    DOI: 10.1021/acsomega.7b00812  

    ISSN: 2470-1343

    eISSN: 2470-1343

  79. Electronic Structure of Transition-Metal Based Cu<inf>2</inf>GeTe<inf>3</inf> Phase Change Material: Revealing the Key Role of Cu d Electrons Peer-reviewed

    Yuta Saito, Yuji Sutou, Paul Fons, Satoshi Shindo, Xeniya Kozina, Jonathan M. Skelton, Alexander V. Kolobov, Keisuke Kobayashi

    Chemistry of Materials 29 (17) 7440-7449 2017/09/12

    DOI: 10.1021/acs.chemmater.7b02436  

    ISSN: 0897-4756

    eISSN: 1520-5002

  80. Enhancement of coherent phonon amplitude in phase-change materials by near-infrared laser irradiation Peer-reviewed

    Takara Suzuki, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Muneaki Hase

    Applied Physics Letters 111 (11) 2017/09/11

    DOI: 10.1063/1.5003346  

    ISSN: 0003-6951

    eISSN: 1077-3118

  81. Manipulating the Bulk Band Structure of Artificially Constructed van der Waals Chalcogenide Heterostructures Peer-reviewed

    Yuta Saito, Kotaro Makino, Paul Fons, Alexander V. Kolobov, Junji Tominaga

    ACS Applied Materials and Interfaces 9 (28) 23918-23925 2017/07/19

    DOI: 10.1021/acsami.7b04450  

    ISSN: 1944-8244

    eISSN: 1944-8252

  82. Strain engineering of atomic and electronic structures of few-monolayer-thick GaN Peer-reviewed

    A. V. Kolobov, P. Fons, Y. Saito, J. Tominaga, B. Hyot, B. André

    Physical Review Materials 1 (2) 2017/07/17

    DOI: 10.1103/PhysRevMaterials.1.024003  

    eISSN: 2475-9953

  83. THz Pulse Detection by Multilayered GeTe/Sb<inf>2</inf>Te<inf>3</inf> Peer-reviewed

    Kotaro Makino, Shota Kuromiya, Keisuke Takano, Kosaku Kato, Makoto Nakajima, Yuta Saito, Junji Tominaga, Hitoshi Iida, Moto Kinoshita, Takashi Nakano

    ACS Applied Materials and Interfaces 8 (47) 32408-32413 2016/11/30

    DOI: 10.1021/acsami.6b11418  

    ISSN: 1944-8244

    eISSN: 1944-8252

  84. Morphology and Electric Conductance Change Induced by Voltage Pulse Excitation in (GeTe)<inf>2</inf>/Sb<inf>2</inf>Te<inf>3</inf> Superlattices Peer-reviewed

    Leonid Bolotov, Yuta Saito, Tetsuya Tada, Junji Tominaga

    Scientific Reports 6 2016/09/13

    DOI: 10.1038/srep33223  

    ISSN: 2045-2322

    eISSN: 2045-2322

  85. Contact resistivity of amorphous and crystalline GeCu<inf>2</inf>Te<inf>3</inf> to W electrode for phase change random access memory Peer-reviewed

    S. Shindo, Y. Sutou, J. Koike, Y. Saito, Y. H. Song

    Materials Science in Semiconductor Processing 47 1-6 2016/06/01

    DOI: 10.1016/j.mssp.2016.02.006  

    ISSN: 1369-8001

  86. Temperature dependence of magneto-optical Kerr signal in GeTe - Sb<inf>2</inf>Te<inf>3</inf> topological superlattice Peer-reviewed

    Do Bang, Hiroyuki Awano, Yuta Saito, Junji Tominaga

    AIP Advances 6 (5) 2016/05/01

    DOI: 10.1063/1.4943152  

    ISSN: 2158-3226

    eISSN: 2158-3226

  87. Magnetic Field-Dependent Magneto-Optical Kerr Effect in [(GeTe)<inf>2</inf>(Sb<inf>2</inf>Te<inf>3</inf>)<inf>1</inf>]<inf>8</inf> Topological Superlattice Peer-reviewed

    Do Bang, Hiroyuki Awano, Yuta Saito, Junji Tominaga

    Journal of Electronic Materials 45 (5) 2496-2500 2016/05/01

    DOI: 10.1007/s11664-016-4389-5  

    ISSN: 0361-5235

  88. A two-step process for growth of highly oriented Sb<inf>2</inf>Te<inf>3</inf> using sputtering Peer-reviewed

    Yuta Saito, Paul Fons, Leonid Bolotov, Noriyuki Miyata, Alexander V. Kolobov, Junji Tominaga

    AIP Advances 6 (4) 2016/04

    DOI: 10.1063/1.4948536  

    ISSN: 2158-3226

    eISSN: 2158-3226

  89. Changes in morphology and local conductance of GeTe-Sb2Te3 superlattice films on silicon observed by scanning probe microscopy in a lithography mode Peer-reviewed

    Leonid Bolotov, Tetsuya Tada, Yuta Saito, Junji Tominaga

    Japanese Journal of Applied Physics 55 (4) 2016/04

    DOI: 10.7567/JJAP.55.04EK02  

    ISSN: 0021-4922

    eISSN: 1347-4065

  90. XAFS analysis of crystal GeCu2Te3 phase change material Peer-reviewed

    K. Kamimura, K. Kimura, S. Hosokawa, N. Happo, H. Ikemoto, Y. Sutou, S. Shindo, Y. Saito, J. Koike

    Z. Phys. Chem. 230 (3) 433-443 2016/03/28

    DOI: 10.1515/zpch-2015-0672  

    ISSN: 2196-7156

  91. XAFS Analysis of Crystal GeCu<inf>2</inf>Te<inf>3</inf> Phase Change Material Peer-reviewed

    Kenji Kamimura, Koji Kimura, Shinya Hosokawa, Naohisa Happo, Hiroyuki Ikemoto, Yuji Sutou, Satoshi Shindo, Yuta Saito, Junichi Koike

    Zeitschrift fur Physikalische Chemie 230 (3) 433-443 2016/03/28

    DOI: 10.1515/zpch-2015-0672  

    ISSN: 0942-9352

  92. Manipulation of the presence of helical surface states of topological insulators using Sb<inf>2</inf>Te<inf>3</inf>-GeTe superlattices Peer-reviewed

    Y. Takagaki, Yuta Saito, Junji Tominaga

    Applied Physics Letters 108 (11) 112102-112102-5 2016/03/14

    DOI: 10.1063/1.4944050  

    ISSN: 0003-6951

    eISSN: 1077-3118

  93. Changes in morphology and local conductance of GeTe–Sb

    Bolotov Leonid, Tada Tetsuya, Saito Yuta, Tominaga Junji

    Jpn. J. Appl. Phys. 55 (4) 04EK02 2016/03/09

    Publisher: Institute of Physics

    DOI: 10.7567/JJAP.55.04EK02  

    ISSN: 0021-4922

    More details Close

    Changes in the morphology and conductance state of [(GeTe)<inf>2</inf>(Sb<inf>2</inf>Te<inf>3</inf>)] superlattice (SL) films on Si(100) caused by external voltage were investigated by multimode scanning probe microscopy (MSPM) and scanning probe lithography (SPL) at room temperature in vacuum. After SPL patterning at a write voltage exceeding a threshold value, grain-dependent changes in transverse film conductance appeared in the MSPM current maps at a low voltage. Specific details of the conductance state switching were dependent on the film growth process. In uniform films grown in a two-step process, a threshold voltage of 1.6 V and a minimum switching power of ∼15 pW were obtained for conductance switching activated by high-energy electrons injected from the probe. Above 3.0 V, thermally driven regrowth of the SL films was observed. The results demonstrate a simple and appropriate method of optimizing topological SL films as recording media without device fabrication.

  94. XAFS analysis on amorphous and crystalline new phase change material GeCu<inf>2</inf>Te<inf>3</inf> Peer-reviewed

    K. Kamimura, S. Hosokawa, N. Happo, H. Ikemoto, Y. Sutou, S. Shindo, Y. Saito, J. Koike

    Journal of Optoelectronics and Advanced Materials 18 (3-4) 248-253 2016/03

    ISSN: 1454-4164

  95. Anisotropic lattice response induced by a linearly-polarized femtosecond optical pulse excitation in interfacial phase change memory material Peer-reviewed

    Kotaro Makino, Yuta Saito, Paul Fons, Alexander V. Kolobov, Takashi Nakano, Junji Tominaga, Muneaki Hase

    Scientific Reports 6 2016/01/25

    DOI: 10.1038/srep19758  

    ISSN: 2045-2322

    eISSN: 2045-2322

  96. Effect of surface cleaning on contact resistivity of amorphous GeCu<inf>2</inf>Te<inf>3</inf> to a W electrode Peer-reviewed

    S. Shindo, Y. Sutou, J. Koike, Y. Saito, Y. H. Song

    MRS Advances 1 (39) 2731-2736 2016

    DOI: 10.1557/adv.2016.310  

    eISSN: 2059-8521

  97. Conductance switching behavior of GeTe/Sb<inf>2</inf>Te<inf>3</inf> superlattice upon hot-electron injection: A scanning probe microscopy study Peer-reviewed

    Leonid Bolotov, Yuta Saito, Tetsuya Tada, Junji Tominaga

    MRS Advances 1 (5) 375-380 2016

    DOI: 10.1557/adv.2016.137  

    ISSN: 2059-8521

    eISSN: 2059-8521

  98. Self-organized van der Waals epitaxy of layered chalcogenide structures Peer-reviewed

    Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga

    Physica Status Solidi (B) Basic Research 252 (10) 2151-2158 2015/10

    DOI: 10.1002/pssb.201552335  

    ISSN: 0370-1972

    eISSN: 1521-3951

  99. Crystallization processes of Sb<inf>100-x</inf>Zn<inf>x</inf> (0 ≤ x ≤ 70) amorphous films for use as phase change memory materials Peer-reviewed

    Yuta Saito, Masashi Sumiya, Yuji Sutou, Daisuke Ando, Junichi Koike

    AIP Advances 5 (9) 2015/09/01

    DOI: 10.1063/1.4931392  

    ISSN: 2158-3226

    eISSN: 2158-3226

  100. 55-μA Ge<inf>x</inf>Te<inf>1-x</inf>/Sb<inf>2</inf>Te<inf>3</inf> superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures Peer-reviewed

    N. Takaura, T. Ohyanagi, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, H. Shirakawa, M. Araidai, K. Shiraishi, Y. Saito, J. Tominaga

    Technical Digest - International Electron Devices Meeting, IEDM 2015-February (February) 29.2.1-29.2.4 2015/02/20

    DOI: 10.1109/IEDM.2014.7047132  

    ISSN: 0163-1918

  101. Giant multiferroic effects in topological GeTe-Sb<inf>2</inf>Te<inf>3</inf> superlattices Peer-reviewed

    Junji Tominaga, Alexander V. Kolobov, Paul J. Fons, Xiaomin Wang, Yuta Saito, Takashi Nakano, Muneaki Hase, Shuichi Murakami, Jens Herfort, Yukihiko Takagaki

    Science and Technology of Advanced Materials 16 (1) 014402 (WEB ONLY) 2015

    DOI: 10.1088/1468-6996/16/1/014402  

    ISSN: 1468-6996

    eISSN: 1878-5514

  102. Chronological change of electrical resistance in GeCu<inf>2</inf>Te<inf>3</inf> amorphous film induced by surface oxidation Peer-reviewed

    Yuta Saito, Satoshi Shindo, Yuji Sutou, Junichi Koike

    Journal of Physics D: Applied Physics 47 (47) 475302,1-8 2014/11/26

    DOI: 10.1088/0022-3727/47/47/475302  

    ISSN: 0022-3727

    eISSN: 1361-6463

  103. Phase change characteristics in GeTe-CuTe pseudobinary alloy Peer-reviewed

    Yuta Saito, Yuji Sutou, Junichi Koike

    Journal of Physical Chemistry C 118 (46) 26973-26980 2014/11/20

    DOI: 10.1021/jp5066264  

    ISSN: 1932-7447

    eISSN: 1932-7455

  104. Coherent phonon study of (GeTe)<inf>l</inf>(Sb<inf>2</inf>Te<inf>3</inf>)<inf>m</inf> interfacial phase change memory materials Peer-reviewed

    Kotaro Makino, Yuta Saito, Paul Fons, Alexander V. Kolobov, Takashi Nakano, Junji Tominaga, Muneaki Hase

    Applied Physics Letters 105 (15) 151902-151902-4 2014/10/13

    DOI: 10.1063/1.4897997  

    ISSN: 0003-6951

  105. Mirror-symmetric magneto-optical kerr rotation using visible light in [(GeTe)<inf>2</inf>(Sb<inf>2</inf>Te<inf>3</inf>)<inf>1</inf>[<inf>n</inf> topological superlattices Peer-reviewed

    Do Bang, Hiroyuki Awano, Junji Tominaga, Alexander V. Kolobov, Paul Fons, Yuta Saito, Kotaro Makino, Takashi Nakano, Muneaki Hase, Yukihiko Takagaki, Alessandro Giussani, Raffaella Calarco, Shuichi Murakami

    Scientific Reports 4 2014/07/17

    DOI: 10.1038/srep05727  

    ISSN: 2045-2322

    eISSN: 2045-2322

  106. Ab-initio calculations and structural studies of (SiTe)<inf>2</inf>(Sb<inf>2</inf>Te<inf>3</inf>)<inf>n</inf> (n: 1, 2, 4 and 6) phase-change superlattice films Peer-reviewed

    Y. Saito, J. Tominaga, P. Fons, A. V. Kolobov, T. Nakano

    Physica Status Solidi - Rapid Research Letters 8 (4) 302-306 2014/04

    DOI: 10.1002/pssr.201409013  

    ISSN: 1862-6254

    eISSN: 1862-6270

  107. Multiple phase change structure for the scalable phase change random access memory array Peer-reviewed

    Jung Min Lee, Yuta Saito, Yuji Sutou, Junichi Koike, Jin Won Jung, Masashi Sahashi, Yun Heub Song

    Japanese Journal of Applied Physics 53 (4) 041801.1-041801.3 2014/04

    DOI: 10.7567/JJAP.53.041801  

    ISSN: 0021-4922

    eISSN: 1347-4065

  108. 不揮発性メモリ用Ge‐Cu‐Te系相変化材料の研究

    須藤祐司, 齊藤雄太, 齊藤雄太, 小池淳一

    まてりあ 53 (2) 45-51 2014

    DOI: 10.2320/materia.53.45  

    ISSN: 1340-2625

  109. Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array Peer-reviewed

    Jung Min Lee, Yun Heub Song, Yuta Saito, Yuji Sutou, Junichi Koike

    Journal of the Korean Physical Society 62 (9) 1258-1263 2013/05

    DOI: 10.3938/jkps.62.1258  

    ISSN: 0374-4884

    eISSN: 1976-8524

  110. Optical contrast and laser-induced phase transition in GeCu <inf>2</inf>Te<inf>3</inf> thin film Peer-reviewed

    Yuta Saito, Yuji Sutou, Junichi Koike

    Applied Physics Letters 102 (5) 051910-051910-5 2013/02/04

    DOI: 10.1063/1.4791567  

    ISSN: 0003-6951

  111. Fourfold coordinated Te atoms in amorphous GeCu <inf>2</inf>Te <inf>3</inf> phase change material Peer-reviewed

    P. Jóvári, Y. Sutou, I. Kaban, Y. Saito, J. Koike

    Scripta Materialia 68 (2) 122-125 2013/01

    DOI: 10.1016/j.scriptamat.2012.09.028  

    ISSN: 1359-6462

  112. Effects of Si addition on the crystallization behaviour of GeTe phase change materials Peer-reviewed

    Y. Saito, Y. Sutou, J. Koike

    Journal of Physics D: Applied Physics 45 (40) 405302,1-7 2012/10/10

    DOI: 10.1088/0022-3727/45/40/405302  

    ISSN: 0022-3727

    eISSN: 1361-6463

  113. Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film Peer-reviewed

    Yuta Saito, Yuji Sutou, Junichi Koike

    Applied Physics Letters 100 (23) 231606-231606-4 2012/06/04

    DOI: 10.1063/1.4726107  

    ISSN: 0003-6951

  114. Crystallization and electrical characteristics of Ge <inf>1</inf>Cu <inf>2</inf>Te <inf>3</inf> films for phase change random access memory Peer-reviewed

    Toshiya Kamada, Yuji Sutou, Masashi Sumiya, Yuta Saito, Junichi Koike

    Thin Solid Films 520 (13) 4389-4393 2012/04

    DOI: 10.1016/j.tsf.2012.02.025  

    ISSN: 0040-6090

  115. Crystallization process and thermal stability of Ge <inf>1</inf>Cu <inf>2</inf>Te <inf>3</inf> amorphous thin films for use as phase change materials Peer-reviewed

    Y. Sutou, T. Kamada, M. Sumiya, Y. Saito, J. Koike

    Acta Materialia 60 (3) 872-880 2012/02

    DOI: 10.1016/j.actamat.2011.10.048  

    ISSN: 1359-6454

  116. Crystallization behavior and resistance change in eutectic Si <inf>15</inf>Te <inf>85</inf> amorphous films Peer-reviewed

    Yuta Saito, Yuji Sutou, Junichi Koike

    Thin Solid Films 520 (6) 2128-2131 2012/01/01

    DOI: 10.1016/j.tsf.2011.09.012  

    ISSN: 0040-6090

  117. Multiresistance characteristics of PCRAM with Ge <inf>1</inf>Cu <inf>2</inf>Te <inf>3</inf> and Ge <inf>2</inf> Sb <inf>2</inf>Te <inf>5</inf> films Peer-reviewed

    Yuta Saito, Yun Heub Song, Jung Min Lee, Yuji Sutou, Junichi Koike

    IEEE Electron Device Letters 33 (10) 1399-1401 2012

    DOI: 10.1109/LED.2012.2210534  

    ISSN: 0741-3106

Show all ︎Show first 5

Misc. 106

  1. Si-Te系セレクタ材料の抵抗スイッチ挙動

    畑山祥吾, 齊藤雄太, 齊藤雄太, フォンス ポール, シュアン イ, キム ミヒョン, 須藤祐司

    日本金属学会講演大会(Web) 174th 2024

  2. TM-Ge-Te系セレクタ材料薄膜におけるアモルファス相の耐熱性

    濱野恵佑, 濱野恵佑, 竹内英輔, 畑山祥吾, 齊藤雄太, フォンス ポール

    日本金属学会講演大会(Web) 174th 2024

  3. 価数変化型不揮発性メモリ材料の創製

    畑山祥吾, 森竣祐, 齊藤雄太, 齊藤雄太, フォンス ポール, 双逸, 須藤祐司

    日本金属学会講演大会(Web) 175th 2024

  4. 二酸化バナジウム薄膜を用いたスマートウィンドウの光学解析

    篠原維月, NGUYEN Huy Hiep, 馬場将亮, 畑山祥吾, 齊藤雄太, 内田紀之, 武田雅敏

    日本金属学会講演大会(Web) 175th 2024

  5. Stigmergy Implementation into Colloidal System for Understanding and Utilizing Swarm Intelligence

    中山牧水, 長瀬暉, 高橋廣守, 齊藤雄太, 畑山祥吾, 牧野孝太郎, 山本詠士, 斎木敏治

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

    ISSN: 2758-4704

  6. The Realization of Low Contact Resistance Sb2Te3/MoS2 Layered Structure

    CHANG W. H., 畑山祥吾, 齊藤雄太, 岡田直也, 遠藤尚彦, 宮田耕充, 入沢寿史

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

    ISSN: 2758-4704

  7. Selector-free memory cell using a metal-oxide-phase change material stacking structure

    畑山祥吾, 齊藤雄太

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

    ISSN: 2758-4704

  8. Tunable Pheromone Interactions among Active Colloids

    中山牧水, 長瀬暉, 高橋廣守, 齊藤雄太, 畑山祥吾, 牧野孝太郎, 山本詠士, 斎木敏治

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

    ISSN: 2758-4704

  9. Inverse spin Hall effect and interface structure in Sb2Te3/Ferromagnet

    諸田美砂子, 畑山祥吾, JEVASUWAN Wipakorn, 深田直樹, 齊藤雄太

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

    ISSN: 2758-4704

  10. Implementation of Swam Intelligence into Colloidal Particle and Phase Change Material System Using Photothermal and Fluidic Effects

    斎木敏治, 中山牧水, 遠藤博紀, 高橋廣守, 長瀬暉, 山本詠士, 齊藤雄太, 畑山祥吾, 牧野孝太郎

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

    ISSN: 2758-4704

  11. スパッタ法で成膜したVO2薄膜の物性に及ぼすWドープの影響

    石原島弘明, 石原島弘明, 馬場将亮, 畑山祥吾, 齊藤雄太, 内田紀行, 武田雅敏

    日本金属学会講演大会(Web) 171st 2022

  12. Realizing of a selector function in Hf-O-Te amorphous films by composition control

    畑山祥吾, 齊藤雄太, 齊藤雄太, 内田紀行, 内田紀行

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 69th 2022

    ISSN: 2436-7613

  13. Orientation controlled chalcogenide phase-change material thin films

    齊藤雄太, 畑山祥吾, 諸田美砂子

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 69th 2022

    ISSN: 2436-7613

  14. Understanding the mechanism of lowering resistivity in transition metal included amorphous chalcogenide

    畑山祥吾, 畑山祥吾, 小林啓介, 小林啓介, 齊藤雄太, FONS Paul, FONS Paul, YI Shuang, 森竣祐, KOLOBOV Alexander V., KOLOBOV Alexander V., 須藤祐司

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021

    ISSN: 2436-7613

  15. Crystallization of a layered chalcogenide with dimensional change of chemical bonding

    齊藤雄太, 畑山祥吾, 畑山祥吾, YI Shuang, FONS Paul, FONS Paul, KOLOBOV Alexander V., KOLOBOV Alexander V., 須藤祐司

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021

    ISSN: 2436-7613

  16. 逆抵抗変化型Cr2Ge2Te6相変化材料の局所構造変化

    畑山祥吾, イ シュアン, フォンス ポール, フォンス ポール, 齊藤雄太, コロボフ アレキサンダー, コロボフ アレキサンダー, 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司

    日本金属学会講演大会(Web) 166th 2020

  17. A Study of Chalcogenide Phase-Change Materials for Next-Generation Electronic Devices

    齊藤雄太

    まてりあ 59 (7) 2020

    ISSN: 1340-2625

  18. The effect of irradiation by Ga+ focused ion beam on coherent phonons in GaP crystal

    市川卓人, 市川卓人, 関口隆史, 齊藤雄太, 長谷宗明

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020

  19. Systematic Materials Design for Phase-Change Memory and Recent Development of Tellurides

    齊藤雄太

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020

  20. Understanding local structure of Cr2Ge2Te6 phase change material for non-volatile memory application

    畑山祥吾, YI Shuang, FONS Paul, FONS Paul, 齊藤雄太, KOLOBOV Alexander V., KOLOBOV Alexander V., 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020

  21. スパッタ法による高配向Bi-Te薄膜の成膜と電子状態解析

    齊藤雄太, FONS Paul, 牧野孝太郎, MITROFANOV Kirill V., 上杉文彦, 竹口雅樹, KOLOBOV Alexander V., 富永淳二

    日本金属学会講演概要(CD-ROM) 164th 2019

    ISSN: 2433-3093

  22. 不揮発性相変化メモリ用遷移金属カルコゲナイド相変化材料の開発

    齊藤雄太, 畑山祥吾, YI Shuang, 進藤怜史, FONS Paul, KOLOBOV Alexander V., 小林啓介, 小林啓介, 小林啓介, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019

  23. 1T’-MoTe2バルク結晶におけるコヒーレントフォノンの観測

    福田拓未, 牧野孝太郎, 齊藤雄太, FONS Paul, KOLOBOV Alexander V., KOLOBOV Alexander V., 上野啓司, MONDAL Richarj, 長谷宗明

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th 2019

  24. Ultrafast Dynamics of Electron-phonon Coupling in Transition-metal Dichalcogenides

    Kotaro Makino, Yuta Saito, Shuuto Horii, Paul Fons, Alexander V. Kolobov, Atsushi Ando, Keiji Ueno, Richarj Mondal, Muneaki Hase

    2018/07/28

    More details Close

    Time-domain femtosecond laser spectroscopic measurements of the ultrafast lattice dynamics in 2H-MoTe2 bulk crystals were carried out to understand the carrier-phonon interactions that govern electronic transport properties. An unusually long lifetime coherent A1g phonon mode was observed even in the presence of very large density of photo-excited carriers at room temperature. The decay rate was observed to decrease with increasing excitation laser fluence. Based on the laser fluence dependence including the inducement of significant phonon softening and a peculiar decrease in phonon decay rate, we attribute the long lifetime lattice dynamics to weak anharmonic phonon-phonon coupling and a carrier-density-dependent deformation potential electron-phonon coupling.

  25. Terahertz­-Induced Phase Change, Volume Expansion and Micropattern Formation Observed in Ge2Sb2Te5 and GeTe/Sb2Te3 Phase Change Materials

    K. Makino, K. Kato, K. Takano, Y Saito, J. Tominaga, T. Nakano, G. Isoyama, M. Nakajima

    2018/04

  26. 超格子型相変化メモリ材料におけるコヒーレント折り返し縦波音響フォノンの観測

    鈴木隆良, 齊藤雄太, FONS P., KOLOBOV A. V., 富永淳二, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 73 (1) 2018

    ISSN: 2189-079X

  27. 高強度THz電場パルスが誘起するアモルファスGe2Sb2Te5の結晶化と成長機構

    佐成晏之, 齊藤雄太, 立崎武弘, 田中耕一郎, 富永淳二, 長谷宗明, 廣理英基

    日本物理学会講演概要集(CD-ROM) 73 (1) 2018

    ISSN: 2189-079X

  28. 逆抵抗変化Cr2Ge2Te6相変化材料の結晶化メカニズム

    畑山祥吾, 須藤祐司, 安藤大輔, 小池淳一, 齊藤雄太, 進藤怜史, 進藤怜史, SONG Yun-Heub

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

  29. 不揮発性メモリ用遷移金属相変化材料の電子構造の解明

    齊藤雄太, 須藤祐司, FONS Paul, KOLOBOV Alexander V., 進藤怜史, 進藤怜史, 畑山祥吾, YI Shuang, KOZINA Xeniya, SKELTON Jonathan M., 小林啓介

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

  30. 高強度THz電場パルスによるGe2Sb2Te5の1次元的結晶成長機構の解明

    佐成晏之, 立崎武弘, 立崎武弘, 齊藤雄太, 牧野孝太郎, FONS Paul, KOLOBOV Alexander V., 富永淳二, 田中耕一郎, 田中耕一郎, 金光義彦, 長谷宗明, 廣理英基, 廣理英基

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

  31. 高強度THz電場による相変化材料におけるゼナートンネリング誘起結晶成長の解明

    佐成晏之, 立崎武弘, 立崎武弘, 齊藤雄太, 牧野孝太郎, FONS Paul, KOLOBOV Alexander V., 富永淳二, 田中耕一郎, 田中耕一郎, 金光義彦, 長谷宗明, 廣理英基, 廣理英基

    日本物理学会講演概要集(CD-ROM) 73 (2) 2018

    ISSN: 2189-079X

  32. Growth mechanism of strong THz pulse induced crystallization in Ge2Sb2Te5 amorphous

    Sanari,Yasuyuki, Saito,Yuta, Tachizaki,Takehiro, Tanaka,Koichiro, Tominaga,Junji, Hase,Muneaki, Hirori,Hideki

    Meeting Abstracts of the Physical Society of Japan 73 1451-1451 2018

    Publisher: The Physical Society of Japan

    DOI: 10.11316/jpsgaiyo.73.1.0_1451  

    ISSN: 2189-0803

  33. Observation of coherent folded longitudinal acoustic phonons in superlattice phase-change materials

    Suzuki,Takara, Saito,Yuta, Fons,Paul, Kolobov,Alexander V, Tominaga,Junji, Hase,Muneaki

    Meeting Abstracts of the Physical Society of Japan 73 1486-1486 2018

    Publisher: The Physical Society of Japan

    DOI: 10.11316/jpsgaiyo.73.1.0_1486  

    ISSN: 2189-0803

  34. Switching effects in iPCM beyond standard operation

    MITROFANOV Kirill V, SAITO Yuta, MIYATA Noriyuki, FONS Paul, KOLOBOV Alexander V, TOMINAGA Junji

    Proceedings of the Symposium on Phase Change Oriented Science 30th 18‐20 2018

  35. Understanding the switching mechanism of GeTe/Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; interfacial phase change memory

    SAITO Yuta, SAITO Yuta, KOLOBOV Alexander V, FONS Paul, MITROFANOV Kirill V, MAKINO Kotaro, TOMINAGA Junji, ROBERTSON John

    Proceedings of the Symposium on Phase Change Oriented Science 30th 43‐46 2018

  36. Electric Field Effects in GeTe/Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; interfacial phase change memory

    FONS Paul, FONS Paul, KOLOBOV Alexander V, SAITO Yuta, MITROFANOV Kirill V, MAKINO Kotaro, TOMINAGA Junji

    Proceedings of the Symposium on Phase Change Oriented Science 30th 28‐31 2018

  37. テラヘルツ波デバイスに向けたGe2Sb2Te5相変化材料の評価

    牧野孝太郎, 加藤康作, 齊藤雄太, FONS Paul, KOLOBOV Alexander V., 富永淳二, 中野隆志, 中嶋誠

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

  38. Terahertz spectroscopy study in GeTe/Sb<inf>2</inf>Te<inf>3</inf> and Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> phase change memory materials Peer-reviewed

    K. Makino, K. Kato, K. Takano, S. Kuromiya, M. Nakajima, Y. Saito, J. Tominaga, T. Nakano

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017/10/12

    DOI: 10.1109/IRMMW-THz.2017.8067227  

    ISSN: 2162-2027

    eISSN: 2162-2035

  39. Novel Materials, Devices and Processes for the Future Electronics

    中野 隆志, 齊藤 雄太, 渡邊 幸志, 吉田 学, 来見田 淳也

    電子情報通信学会誌 = The journal of the Institute of Electronics, Information and Communication Engineers 100 (9) 962-967 2017/09

    Publisher: 電子情報通信学会

    ISSN: 0913-5693

  40. 高強度THz電場による超格子(GeTe)2/Sb2Te3の構造変化

    佐成晏之, 佐成晏之, 廣理英基, 廣理英基, 内田健人, 内田健人, 田中耕一郎, 田中耕一郎, 齊藤雄太, 齊藤雄太, 富永淳二, 富永淳二, 長谷宗明, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 72 (1) 2017

    ISSN: 2189-079X

  41. ダイカルコゲナイドMoTe2における長寿命コヒーレントフォノン

    牧野孝太郎, 齊藤雄太, 堀井嵩斗, FONS P., KOLOBOV A.V., 安藤淳, 上野啓司, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 72 (2) 2017

    ISSN: 2189-079X

  42. [GeTe/Sb2Te3]超格子の磁気容量効果

    鷲見聡, 平野友市郎, BANG Do, 粟野博之, 齊藤雄太, 富永淳二

    日本磁気学会学術講演概要集 41st 2017

    ISSN: 1882-2959

  43. Structural change of amorphous Ge2Sb2Te5 induced by strong THz electric field

    佐成晏之, 齊藤雄太, 齊藤雄太, 内田健人, 立崎武弘, 田中耕一郎, 富永淳二, 富永淳二, 長谷宗明, 長谷宗明, 廣理英基, 廣理英基

    Optics & Photonics Japan講演予稿集(CD-ROM) 2017 2017

  44. Crystal growth mechanism of Ge2Sb2Te5 amorphous under strong THz field

    佐成晏之, 齊藤雄太, 内田健人, 立崎武弘, 田中耕一郎, 富永淳二, 長谷宗明, 廣理英基

    光物性研究会論文集 28th 2017

  45. Long-lived optical coherent phonon mode in transition metal dichalcogenide MoTe2

    Makino,K, Saito,Y, Horii,S, Fons,P, Kolobov,A. V, Ando,A, Ueno,K, Hase,M

    Meeting Abstracts of the Physical Society of Japan 72 (0) 1300-1300 2017

    Publisher: The Physical Society of Japan

    DOI: 10.11316/jpsgaiyo.72.2.0_1300  

    ISSN: 2189-0803

  46. 高強度テラヘルツ波による相変化材料のアブレーション

    牧野孝太郎, 加藤康作, 高野恵介, 齊藤雄太, 富永淳二, 中野隆志, 磯山悟朗, 中嶋誠

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th 2017

  47. エレクトロニクスが創り出したもの,創り出すもの 2.エレクトロニクスのこれから 2‐7 将来のエレクトロニクスを支える材料とプロセス

    中野隆志, 齊藤雄太, 渡邊幸志, 吉田学, 来見田淳也

    電子情報通信学会誌 100 (9) 962‐967 2017

    ISSN: 0913-5693

  48. Optoelectronic Device Based on Topological Phase Transition

    牧野孝太郎, 齊藤雄太, 中野隆志, 富永淳二

    村田学術振興財団年報 (31) 418‐425 2017

    ISSN: 0919-3383

  49. THz detection by multi-layered topological insulator Peer-reviewed

    K. Makino, S. Kuromiya, K. Takano, K. Kato, M. Nakajima, H. Iida, M. Kinoshita, Y. Saito, J. Tominaga, T. Nakano

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2016-November 2016/11/28

    DOI: 10.1109/IRMMW-THz.2016.7758408  

    ISSN: 2162-2027

    eISSN: 2162-2035

  50. A study on phase transition behaviors of GeCu2Te3 phase change material for PCRAM application Peer-reviewed

    Y. Sutou, S. Shindo, Y. Saito, J. Koike, YH. Song

    Proceedings of the 28th Symposium on Phase Change Oriented Science 2016 1 52-55 2016/11

  51. スパッタ法による不揮発性メモリ用高配向相変化材料薄膜の成膜技術の開発

    齊藤雄太, 宮田典幸, FONS Paul, KOLOBOV Alexander V, 富永淳二

    日本金属学会講演概要(CD-ROM) 159th ROMBUNNO.S3.20 2016/09/07

    ISSN: 1342-5730

  52. Resisatnce contrast of GeCu2Te3 phase change memory cell

    S. Shindo, Y. Sutou, J. Koike, Y. Saito, JS. An, YH. Song

    European Symposium on Phase Change and Ovonic Science proceedings 2016 1 195-196 2016/09

  53. 直線偏光パルスによる非等方的なコヒーレントフォノンの制御

    牧野孝太郎, 齊藤雄太, FONS Paul, KOLOBOV Alexander V., 中野隆志, 富永淳二, 長谷宗明

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd 2016

  54. トポロジカル絶縁体Sb2Te3におけるコヒーレント表面フォノンの実時間観測

    新井輝, 齊藤雄太, KOLOBOV A.V., 富永淳二, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 71 (2) 2016

    ISSN: 2189-079X

  55. W電極/GeCu2Te3相変化材料間のコンタクト抵抗

    進藤怜史, 須藤祐司, 安藤大輔, 小池淳一, 齊藤雄太

    日本金属学会講演概要(CD-ROM) 159th 2016

    ISSN: 2433-3093

  56. スパッタ法による不揮発性メモリ用高配向相変化材料薄膜の成膜技術の開発

    齊藤雄太, 宮田典幸, FONS Paul, KOLOBOV Alexander V., 富永淳二

    日本金属学会講演概要(CD-ROM) 159th 2016

    ISSN: 2433-3093

  57. Multi-layered topological insulator for THz detection Peer-reviewed

    K. Makino, S. Kuromiya, K. Takano, K. Kato, M. Nakajima, H. Iida, M. Kinoshita, Y. Saito, J. Tominaga, T. Nakano

    Optics InfoBase Conference Papers 2016

    DOI: 10.1364/sensors.2016.sew1e.3  

  58. Switching behavior of GeCu2Te3 phase change memory cell

    SHINDO Satoshi, SUTOU Yuji, KOIKE Junichi, SAITO Yuta, AN Jun‐Seop, SONG Yun‐Heub

    Proceedings of the Symposium on Phase Change Oriented Science 28th 69‐70 2016

  59. Physical properties of sputter grown Bi-Te and GeTe/Bi-Te superlattice films

    SAITO Yuta, MITROFANOV Kirill, MAKINO Kotaro, FONS Paul, KOLOBOV Alexander V, MIYATA Noriyuki, TOMINAGA Junji

    Proceedings of the Symposium on Phase Change Oriented Science 28th 50‐51 2016

  60. Contact resistivity change of GeCu2Te3 to W electrode by crystallization

    S. Shindo, Y. Sutou, J. Koike, Y. Saito

    Proceedings of the 27th Symposium on Phase Change Oriented Science 67-68 2015/11/26

  61. Contact resistivity of GeCu2Te3 phase change material on W electrode

    S. Shindo, Y. Sutou, J. Koike, Y. Saito

    European Symposium on Phase Change and Ovonic Science proceedings 147-148 2015/09

  62. Feasibility study of multi-level PCRAM with multiple phase change layers

    Y. Sutou, Y. Saito, S. Shindo, J. Koike, J.M. Lee, Y.H. Song

    European Symposium on Phase Change and Ovonic Science proceedings 133-134 2015/09

  63. Magneto optical Kerr rotation of [(GeTe)<inf>2</inf>(Sb<inf>2</inf>Te<inf>3</inf>)<inf>1</inf>]<inf>n</inf> superlattice Peer-reviewed

    B. Do, H. Awano, Y. Saito, J. Tominaga, S. Murakami

    2015 IEEE International Magnetics Conference, INTERMAG 2015 2015/07/14

    DOI: 10.1109/INTMAG.2015.7157042  

  64. W電極上のGeCu2Te3の相変態に伴う界面接触抵抗変化

    進藤怜史, 須藤祐司, 小池淳一, 齊藤雄太

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th 2015

  65. GeTe-CuTe擬二元系薄膜の相変化挙動

    須藤祐司, 齊藤雄太, 進藤怜史, 小池淳一

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th 2015

  66. トポロジカル絶縁体超格子の電子状態に及ぼすファンデルワールス力の影響

    齊藤雄太, FONS Paul, KOLOBOV Alexander V., 富永淳二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th 2015

  67. GeTe/Sb2Te3相変化材料の赤外線・THz波検出器応用に向けた研究

    牧野孝太郎, 齊藤雄太, 富永淳二, 中野隆志

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 62nd 2015

  68. トポロジカル絶縁体カルコゲナイド薄膜のスパッタ法による高配向成膜

    齊藤雄太, 富永淳二, 牧野孝太郎, FONS Paul, KOLOBOV Alexander V., 中野隆志

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 62nd 2015

  69. THz detection by GeTe/Sb2Te3 interfacial phase change materials Peer-reviewed

    K. Makino, S. Kuromiya, K. Takano, M. Nakajima, H. Iida, M. Kinoshita, Y. Saito, J. Tominaga, T. Nakano

    Optics InfoBase Conference Papers Part F132-JSAP 2019 2015

  70. Anomalous phase change in [(GeTe)<inf>2</inf>/(Sb<inf>2</inf>Te<inf>3</inf>)]20 superlattice observed by coherent phonon spectroscopy Peer-reviewed

    K. Makino, Y. Saito, K. Mitrofanov, J. Tominaga, A. V. Kolobov, T. Nakano, P. Fons, M. Hase

    Springer Proceedings in Physics 162 199-201 2015

    DOI: 10.1007/978-3-319-13242-6_47  

    ISSN: 0930-8989

    eISSN: 1867-4941

  71. A study on phase change characteristics of (GeTe)1-xSix films

    Y. Sutou, Y. Saito, J. Koike

    Proceedings of the 26th symposium on Phase Change Oriented Science (PCOS) 1 53-56 2014/11

  72. Contact resistivity of GeCu2Te3 on metal electrode measured by CTLM Peer-reviewed

    S. Shindo, Y. Sutou, J. Koike, Y. Saito

    Proceedings of the 26th symposium on Phase Change Oriented Science (PCOS) 1 63-64 2014/11

  73. Fast crystallization in Si-doped GeTe amorphous film by surface oxidation

    Y. Sutou, Y. Saito, J. Koike

    European/ Phase Change and Ovonics Symposium 1 (1) 109-110 2014/09/07

  74. Dependence pf electrode material on resistance-temperature curves in GeCu2Te3

    S. Shindo, Y. Sutou, J. Koike, Y. Saito

    European/ Phase Change and Ovonics Symposium 1 (1) 131-132 2014/09/07

  75. 28pCK-4 Coherent phonon spectroscopy in interfacial phase change memory material

    Makino,K, Saito,Y, Fons,P, Kolobov,A. V, Tominaga,J, Nakano,T, Hase,M

    Meeting abstracts of the Physical Society of Japan 69 (1) 755 2014

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  76. Anomalous phase change process in [(GeTe)<inf>2</inf>/(Sb<inf>2</inf>Te<inf>3</inf>)]20 superlattice observed by coherent phonon spectroscopy Peer-reviewed

    K. Makino, Y. Saito, K. Mitrofanov, J. Tominaga, A. V. Kolobov, T. Nakano, P. Fons, M. Hase

    Optics InfoBase Conference Papers 2014

    DOI: 10.1364/up.2014.09.wed.p3.34  

    eISSN: 2162-2701

  77. Magneto-optical Kerr effect of [(GeTe)2(Sb2Te3)1]n superlattice without any magnetic elements

    AWANO H, BANG D, TOMINAGA J, KOLOBOV A, FONS P, SAITO Y, MAKINO K, NAKANO T, HASE M, TAKAGAKI Y, GIUSSANI A, CALARCO R, MURAKAMI S

    Proc Symp Phase Chang Oriented Sci 26th 38-41 2014

  78. Spintronics using interfacial phase change memory, iPCM

    TOMINAGA JUNJI, RICHTER JAN, SAITO YUTA, KOLOBOV ALEXANDER, FONS PAUL, MURAKAMI SHUICHI

    Proc Symp Phase Chang Oriented Sci 25th 38-40 2013

  79. Theoretical and experimental research for SiTe/Sb2Te3 phase change superlattice

    SAITO YUTA, TOMINAGA JUNJI, FONS PAUL J, KOLOBOV ALEXANDER V

    Proc Symp Phase Chang Oriented Sci 25th 77-78 2013

  80. Electronic Structure of the Novel Phase-Change Material GeCu2Te3

    KOBAYASHI K, KOBATA M, SKELTON J, ELLIOTT S, SAITO Y, SUTOU Y, KOIKE J

    Proc Symp Phase Chang Oriented Sci 25th 48-51 2013

  81. Feasibility study of Ge2Sb2Te5/GeCu2Te3 memory cell with multi-level resistance

    SHINDO S, SAITO Y, SUTOU Y, KOIKE J, LEE J. M, SONG Y. H

    Proc Symp Phase Chang Oriented Sci 25th 75-76 2013

  82. Phase transition characteristics of GeCu2Te3 thin film

    SUTOU Y, SAITO Y, KOIKE J

    Proc Symp Phase Chang Oriented Sci 25th 41-44 2013

  83. Crystallization behaviors and structral study of amorphous GeCu2Te3 Invited

    Y. Sutou, Y. Saito, J. Koike, P. Jovari, I. Kaban

    Proceedings of EPCOS 2012 50-55 2012/07/08

  84. Composition dependence on phase change characteristics in Ge-Cu-Te ternary phase change materials

    Y. Saito, Y. Sutou, J. Koike

    Proceedings of EPCOS2012 152-153 2012/07/08

  85. Study of GeCu2Te3 by Hard X-ray Photoelectron Spectroscopy

    KOBAYASHI K, KOBATA M, KOBATA M, SAITO Y, SUTOU Y, KOIKE J

    Proc Symp Phase Chang Oriented Sci 24th 76-84 2012

  86. A study on phase change characteristics of Ge-Cu-Te ternary alloy thin films

    SUTOU Y, SAITO Y, KOIKE J

    Proc Symp Phase Chang Oriented Sci 24th 45-48 2012

  87. Phase change characteristics of Ge1Cu2Te3 films for use as phase change material Invited

    Y. Sutou, Y. Saito, T. Kamada, M. Sumiya, J. Koike

    European Symposium on Phase Change and Ovonic Science proceedings 2011/09/04

  88. Crystallization behaviors of Si-doped GeTe phase change materials

    Y. Saito, Y. Sutou, J. Koike

    Proceedings of EPCOS 2012 197-198 2011/09/04

  89. Hard X-ray photoelectron spectroscopy of crystalline and amorphous Ge1Cu2Te3 Invited

    K. Kobayashi, M. Kobata, I. Pis, S. Ueda, Y. Sutou, Y. Saito, J. Koike

    Proceedings of EPCOS 2012 40-43 2011/09/04

  90. (GeTe)100-xSix相変化材料の電気抵抗変化及び相変化挙動

    齊藤雄太, 隅谷真志, 須藤祐司, 小池淳一

    応用物理学関係連合講演会講演予稿集(CD-ROM) 58th 2011

  91. GeCu2Te3の電気特性とその相変化挙動

    隅谷真志, 鎌田俊哉, 齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要(CD-ROM) 149th 2011

    ISSN: 2433-3093

  92. Ge-Cu-Te films for phase change random access memory

    SUTOU Y, SAITO Y, KAMADA T, SUMIYA M, KOIKE J

    Proc Symp Phse Chang Opt Inf Storage 23rd 27-29 2011

  93. Phase change behavior of Ge1Cu2Te3 thin films

    Y. Sutou, T. Kamada, Y. Saito, M. Sumiya, J. Koike

    European Symposium on Phase Change and Ovonic Science proceedings 185-186 2010/09

  94. Crystallization processes of eutectic Si-Te and Ge-Te phase change materials

    Y. Saito, Y. Sutou, J. Koike

    European Symposium on Phase Change and Ovonic Science proceedings 183 (184) 2010/09

  95. Ge1Cu2Te3薄膜の相変化挙動

    須藤祐司, 鎌田俊哉, 齊藤雄太, 隅谷真志, 小池淳一

    応用物理学会学術講演会講演予稿集(CD-ROM) 71st 2010

  96. Si-TeおよびGe-Te共晶型相変化材料の結晶化過程

    齊藤雄太, 鎌田俊哉, 隅谷真志, 須藤祐司, 小池淳一

    応用物理学会学術講演会講演予稿集(CD-ROM) 71st 2010

  97. GeTe相変化メモリ材料の結晶化挙動に及ぼすSi添加の影響

    齊藤雄太, 隅谷真志, 鎌田俊哉, 須藤祐司, 小池淳一

    日本金属学会講演概要 147th 2010

    ISSN: 1342-5730

  98. Ge-Cu-Teアモルファス薄膜の相変化過程に及ぼすSi添加の影響

    隅谷真志, 鎌田俊哉, 齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要 147th 2010

    ISSN: 1342-5730

  99. Crystallization behavior of Ge<inf>1</inf>Cu<inf>2</inf>Te<inf>3</inf> amorphous film Peer-reviewed

    Y. Sutou, T. Kamada, Y. Saito, M. Sumiya, J. Koike

    Materials Research Society Symposium Proceedings 1251 7-12 2010

    DOI: 10.1557/proc-1251-h05-08  

    ISSN: 0272-9172

  100. Electrical resistance change with crystallization in Si-Te amorphous thin films Peer-reviewed

    Yuta Saito, Yuji Sutou, Junichi Koike

    Materials Research Society Symposium Proceedings 1251 99-104 2010

    DOI: 10.1557/proc-1251-h06-07  

    ISSN: 0272-9172

  101. Phase change behavior of Ge1Cu2Te3 thin films

    KAMADA TOSHIYA, SAITO YUTA, SUMIYA MASASHI, SUTOU YUJI, KOIKE JUNICHI

    Proc Symp Phse Chang Opt Inf Storage 22nd 21-23 2010

  102. アモルファスGe100-xTex薄膜の昇温過程における電気抵抗及び構造変化

    齊藤雄太, 鎌田俊哉, 須藤祐司, 小池淳一

    日本金属学会講演概要 144th 2009

    ISSN: 1342-5730

  103. アモルファスSi100-xTex薄膜の昇温過程における電気抵抗及び構造変化

    齊藤雄太, 鎌田俊哉, 須藤祐司, 小池淳一

    日本金属学会講演概要 145th 2009

    ISSN: 1342-5730

  104. Ge-Cu-Te三元合金薄膜の相変化挙動

    鎌田俊哉, 齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要 145th 2009

    ISSN: 1342-5730

  105. Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films Peer-reviewed

    Yuta Saito, Yuji Sutou, Junichi Koike

    Materials Research Society Symposium Proceedings 1160 143-148 2009

    ISSN: 0272-9172

  106. アモルファスGeTe薄膜の結晶化過程における電気抵抗及び構造変化

    齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要 143rd 2008

    ISSN: 1342-5730

Show all ︎Show first 5

Books and Other Publications 1

  1. Phase change materials for optical disc and display applications

    Yuta Saito, Kotaro Makino, Paul Fons

    World Scientific Publishing Co. 2020/01/01

    DOI: 10.1142/9789811215575_0020  

Presentations 52

  1. 新材料研究開発に向けた新たなアプローチ Invited

    齊藤雄太

    令和5年度軽金属学会東北支部講演会 2024/03/29

  2. アモルファス結晶化を利用した二次元層状物質の新展開 Invited

    齊藤雄太

    日本結晶成長学会 新技術・新材料分科会 第3回研究会 2024/03/07

  3. Fabrication of layered tellurides by crystallization of sputter-grown amorphous thin films Invited

    Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa

    The 66th Fullerenes-Nanotubes-Graphene (FNTG) General Symposium 2024/03/06

  4. Emerging Sb- and Ge- based layered tellurides for electronic device application Invited

    Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa

    PRICM11 (The 11th Pacific Rim International Conference on Advanced Materials and Processing) 2023/11/21

  5. Layered Chalcogenide Materials for Phase-Change Memory and Novel Applications Invited

    Yuta Saito

    2022 Materials Research Society (MRS) Fall Meeting & Exhibit 2022/11/30

  6. カルコゲナイド材料の高機能化と次世代電子デバイスへの応用 Invited

    齊藤雄太

    2022年秋期(第171回)日本金属学会講演大会 2022/09/22

  7. カルコゲナイド系相変化材料の発展と今後の展望 Invited

    齊藤雄太

    2021年第68回応用物理学会春季学術講演会 2021/03/18

  8. 相変化材料の材料設計指針とテルライド材料の新しい展開 Invited

    齊藤雄太

    2020年第67回応用物理学会春季学術講演会 2020/03/14

  9. Origin of electrical contrast in interfacial phase change memory Invited

    Yuta Saito

    Insulating Films on Semiconductors (INFOS 2019) 2019/07/02

  10. スパッタ法による高配向Bi‐Te薄膜の成膜と電子状態解析

    齊藤雄太, FONS Paul, 牧野孝太郎, MITROFANOV Kirill V, 上杉文彦, 竹口雅樹, KOLOBOV Alexander V, 富永淳二

    日本金属学会講演概要(CD-ROM) 2019/03/06

  11. 不揮発性相変化メモリ用遷移金属カルコゲナイド相変化材料の開発

    齊藤雄太, 畑山祥吾, YI Shuang, 進藤怜史, FONS Paul, KOLOBOV Alexander V, 小林啓介, 小林啓介, 小林啓介, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2019/02/25

  12. Sputter Growth of Chalcogenide Superlattice Films for Future Phase Change Memory Applications Invited

    Yuta Saito, Kirill V. Mitrofanov, Kotaro Makino, N. Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

    Americas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018 2018/10/03

  13. Understanding the crystalline and electronic structure of GeTe/Sb2Te3 chalcogenide superlattices Invited

    Yuta Saito, Alexander V. Kolobov, Paul Fons, Kirill V. Mitrofanov, Kotaro Makino, Junji Tominaga, John Robertson

    European Phase Change and Ovonics Symposium 2018 (EPCOS2018) 2018/09/24

  14. 高強度THz電場による相変化材料におけるゼナートンネリング誘起結晶成長の解明

    佐成晏之, 立崎武弘, 立崎武弘, 齊藤雄太, 牧野孝太郎, FONS Paul, KOLOBOV Alexander V, 富永淳二, 田中耕一郎, 田中耕一郎, 金光義彦, 長谷宗明, 廣理英基, 廣理英基

    日本物理学会講演概要集(CD-ROM) 2018/09/21

  15. テラヘルツ波デバイスに向けたGe2Sb2Te5相変化材料の評価

    牧野孝太郎, 加藤康作, 齊藤雄太, FONS Paul, KOLOBOV Alexander V, 富永淳二, 中野隆志, 中嶋誠

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2018/09/05

  16. 不揮発性メモリ用遷移金属相変化材料の電子構造の解明

    齊藤雄太, 須藤祐司, FONS Paul, KOLOBOV Alexander V, 進藤怜史, 進藤怜史, 畑山祥吾, YI Shuang, KOZINA Xeniya, SKELTON Jonathan M, 小林啓介

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2018/09/05

  17. 逆抵抗変化Cr2Ge2Te6相変化材料の結晶化メカニズム

    畑山祥吾, 須藤祐司, 安藤大輔, 小池淳一, 齊藤雄太, 進藤怜史, 進藤怜史, SONG Yun‐Heub

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2018/09/05

  18. 高強度THz電場パルスによるGe2Sb2Te5の1次元的結晶成長機構の解明

    佐成晏之, 立崎武弘, 立崎武弘, 齊藤雄太, 牧野孝太郎, FONS Paul, KOLOBOV Alexander V, 富永淳二, 田中耕一郎, 田中耕一郎, 金光義彦, 長谷宗明, 廣理英基, 廣理英基

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2018/09/05

  19. Growth Mechanism of Layered Chalcogenides by Sputtering and Their Applications in Future Electronics Invited

    Yuta Saito

    2018 Materials Research Society (MRS) Spring Meeting & Exhibit 2018/04/05

  20. 超格子型相変化メモリ材料におけるコヒーレント折り返し縦波音響フォノンの観測

    鈴木隆良, 齊藤雄太, FONS P, KOLOBOV A. V, 富永淳二, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 2018/03/23

  21. 高強度THz電場パルスが誘起するアモルファスGe2Sb2Te5の結晶化と成長機構

    佐成晏之, 齊藤雄太, 立崎武弘, 田中耕一郎, 富永淳二, 長谷宗明, 廣理英基

    日本物理学会講演概要集(CD-ROM) 2018/03/23

  22. Structural change of amorphous Ge2Sb2Te5 induced by strong THz electric field

    佐成晏之, 齊藤雄太, 齊藤雄太, 内田健人, 立崎武弘, 田中耕一郎, 富永淳二, 富永淳二, 長谷宗明, 長谷宗明, 廣理英基, 廣理英基

    Optics &amp; Photonics Japan講演予稿集(CD-ROM) 2017/10/16

  23. ダイカルコゲナイドMoTe2における長寿命コヒーレントフォノン

    牧野孝太郎, 齊藤雄太, 堀井嵩斗, FONS P, KOLOBOV A.V, 安藤淳, 上野啓司, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 2017/09/25

  24. [GeTe/Sb2Te3]超格子の磁気容量効果

    鷲見聡, 平野友市郎, BANG Do, 粟野博之, 齊藤雄太, 富永淳二

    日本磁気学会学術講演概要集 2017/09/05

  25. 高強度THz電場による超格子(GeTe)2/Sb2Te3の構造変化

    佐成晏之, 佐成晏之, 廣理英基, 廣理英基, 内田健人, 内田健人, 田中耕一郎, 田中耕一郎, 齊藤雄太, 齊藤雄太, 富永淳二, 富永淳二, 長谷宗明, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 2017/03/21

  26. Structural change of GeTe/Sb2Te3 superlattice induced by strong THz electric field pulse

    Sanari Y, Hirori H, Uchida K, Tanaka K, Saito Y, Tominaga J, Hase M

    Meeting Abstracts of the Physical Society of Japan 2017

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    <p>相変化材料である超格子GeTe/Sb_2_Te_3_に高強度THz電場を印加すると、ラマン散乱スペクトルにおいて新たな振動ピークが出現することを確認した。これはTe由来の振動に起因する可能性が高く、THz電場の印加によって試料の構造変化が誘起されたことを示唆している。講演では、超高速分光によるTHz電場誘起の反射率変化ダイナミクスと構造変化の関係性、また光励起キャリアの影響について議論する。</p>

  27. トポロジカル絶縁体Sb2Te3におけるコヒーレント表面フォノンの実時間観測

    新井輝, 齊藤雄太, KOLOBOV A.V, 富永淳二, 長谷宗明

    日本物理学会講演概要集(CD-ROM) 2016/09/23

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    <p>フェムト秒レーザーを用いた時間分解反射率測定により、Sb_2_Te_3_薄膜試料のコヒーレントフォノンを測定し、発生したA_1g_モードのスペクトル形状を様々な膜厚(1 ~ 10 QL)で比較した。その結果、10~5 QLの試料では、鋭いA_1g_モードのピークが5.0 THz付近に一つだけ見えていたのに対し、4 QL以下の試料では4.7 THz付近にも幅の広いピークが新たに発生していることが確認できた。このような低周波のピークはカルコゲナイド系材料の表層における表面フォノンと考えられている。講演では、トポロジカル絶縁体との関連についても議論する。</p>

  28. スパッタ法による不揮発性メモリ用高配向相変化材料薄膜の成膜技術の開発

    齊藤雄太, 宮田典幸, FONS Paul, KOLOBOV Alexander V, 富永淳二

    日本金属学会講演概要(CD-ROM) 2016/09/07

  29. W電極/GeCu2Te3相変化材料間のコンタクト抵抗

    進藤怜史, 須藤祐司, 安藤大輔, 小池淳一, 齊藤雄太

    日本金属学会講演概要(CD-ROM) 2016/09/07

  30. Voltage-Pulse-Induced Expansion of Chalcogenide Superlattices Measured by Scanning Probe Microscopy

    BOLOTOV Leonid, TADA Tetsuya, SAITO Yuta, TOMINAGA Junji

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2016/09/01

  31. 直線偏光パルスによる非等方的なコヒーレントフォノンの制御

    牧野孝太郎, 齊藤雄太, FONS Paul, KOLOBOV Alexander V, 中野隆志, 富永淳二, 長谷宗明

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2016/03/03

  32. Hysteresis of the Electrostatic Potential of (GeTe)2 Sb2Te3 Superlattice Grains Measured by Scanning Probe Spectroscopy

    BOLOTOV Leonid, TADA Tetsuya, SAITO Yuta, TOMINAGA Junji

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2016/03/03

  33. Self-organized van der Waals epitaxy and two-step growth method for fabrication of chalcogenide superlattice films and their application Invited

    Yuta Saito, Leonid Bolotov, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

    The 27th Symposium on Phase Change Oriented Science PCOS 2015 2015/11/27

  34. GeTe‐CuTe擬二元系薄膜の相変化挙動

    SUTO YUJI, SAITO YUTA, SHINDO SATOSHI, KOIKE JUN'ICHI

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2015/08/31

  35. トポロジカル絶縁体超格子の電子状態に及ぼすファンデルワールス力の影響

    SAITO YUTA, FONS PAUL, KOLOBOV ALEXANDER V, TOMINAGA JUNJI

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2015/08/31

  36. W電極上のGeCu2Te3の相変態に伴う界面接触抵抗変化

    SHINDO SATOSHI, SUTO YUJI, KOIKE JUN'ICHI, SAITO YUTA

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2015/08/31

  37. トポロジカル絶縁体カルコゲナイド薄膜のスパッタ法による高配向成膜

    SAITO YUTA, TOMINAGA JUNJI, MAKINO KOTARO, FONS PAUL, KOLOBOV ALEXANDER V, NAKANO TAKASHI

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2015/02/26

  38. GeTe/Sb2Te3相変化材料の赤外線・THz波検出器応用に向けた研究

    MAKINO KOTARO, SAITO YUTA, TOMINAGA JUNJI, NAKANO TAKASHI

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2015/02/26

  39. 19aPS-110 XAFS analysis of crystal GeCu_2Te_3 phase change material

    Kamimura K, Hosokawa S, Happo N, Ikemoto H, Sutou Y, Shindo S, Saito Y, Koike J

    Meeting Abstracts of the Physical Society of Japan 2015

  40. Fundamental properties and deposition behaviors of interfacial phase-change memory (iPCM) materials Invited

    Yuta Saito, Junji Tominaga, Kotaro Makino, Xiaomin Wang, Alexander V. Kolobov, Paul Fons, Takashi Nakano

    European\Phase Change and Ovonics Symposium, E\PCOS2014 2014/09/09

  41. 超格子相変化記録材料におけるコヒーレントフォノン分光

    牧野孝太郎, 齊藤雄太, FONA P, KOLOBOV A.V, 富永淳二, 中野隆志, 長谷宗明

    日本物理学会講演概要集 2014/03/05

  42. 28pCK-4 Coherent phonon spectroscopy in interfacial phase change memory material

    Makino K, Saito Y, Fons P, Kolobov A. V, Tominaga J, Nakano T, Hase M

    Meeting Abstracts of the Physical Society of Japan 2014

  43. GeCu2Te3の電気特性とその相変化挙動

    隅谷真志, 鎌田俊哉, 齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要(CD-ROM) 2011/10/20

  44. (GeTe)100-xSix相変化材料の電気抵抗変化及び相変化挙動

    齊藤雄太, 隅谷真志, 須藤祐司, 小池淳一

    応用物理学関係連合講演会講演予稿集(CD-ROM) 2011/03/09

  45. GeTe相変化メモリ材料の結晶化挙動に及ぼすSi添加の影響

    齊藤雄太, 隅谷真志, 鎌田俊哉, 須藤祐司, 小池淳一

    日本金属学会講演概要 2010/09/25

  46. Ge‐Cu‐Teアモルファス薄膜の相変化過程に及ぼすSi添加の影響

    隅谷真志, 鎌田俊哉, 齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要 2010/09/25

  47. Si‐TeおよびGe‐Te共晶型相変化材料の結晶化過程

    齊藤雄太, 鎌田俊哉, 隅谷真志, 須藤祐司, 小池淳一

    応用物理学会学術講演会講演予稿集(CD-ROM) 2010/08/30

  48. Ge1Cu2Te3薄膜の相変化挙動

    須藤祐司, 鎌田俊哉, 齊藤雄太, 隅谷真志, 小池淳一

    応用物理学会学術講演会講演予稿集(CD-ROM) 2010/08/30

  49. アモルファスSi100-xTex薄膜の昇温過程における電気抵抗及び構造変化

    齊藤雄太, 鎌田俊哉, 須藤祐司, 小池淳一

    日本金属学会講演概要 2009/09/15

  50. Ge‐Cu‐Te三元合金薄膜の相変化挙動

    鎌田俊哉, 齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要 2009/09/15

  51. アモルファスGe100-xTex薄膜の昇温過程における電気抵抗及び構造変化

    齊藤雄太, 鎌田俊哉, 須藤祐司, 小池淳一

    日本金属学会講演概要 2009/03/28

  52. アモルファスGeTe薄膜の結晶化過程における電気抵抗及び構造変化

    齊藤雄太, 須藤祐司, 小池淳一

    日本金属学会講演概要 2008/09/23

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Industrial Property Rights 9

  1. 固体のスピン特性からトポロジカル絶縁性を評価する方法及び装置

    長谷 宗明, マンダル リチャジ, 粟飯原 有輝, 齊藤 雄太, 富永 淳二

    特許第6782026号

    Property Type: Patent

  2. マルチフェロイック素子の初期化方法

    富永 淳二, 齊藤 雄太

    Property Type: Patent

  3. 相変化材料および相変化型メモリ素子

    須藤 祐司, 畑山 祥吾, 進藤 怜史, 小池 淳一, 齊藤 雄太

    Property Type: Patent

  4. 多段相変化材料および多値記録相変化メモリ素子

    須藤 祐司, 小池 淳一, 齊藤 雄太

    Property Type: Patent

  5. 多段相変化材料および多値記録相変化メモリ素子

    須藤 祐司, 小池 淳一, 齊藤 雄太

    特許第6086097号

    Property Type: Patent

  6. 結晶配向層積層構造体、電子メモリ及び結晶配向層積層構造体の製造方法

    齊藤 雄太, 富永 淳二, 近藤 礼子

    Property Type: Patent

  7. 相変化材料および相変化型メモリ素子

    須藤 祐司, 小池 淳一, 齊藤 雄太, 鎌田 俊哉

    Property Type: Patent

  8. 結晶配向層積層構造体、電子メモリ及び結晶配向層積層構造体の製造方法

    齊藤 雄太, 富永 淳二, 近藤 礼子

    特許第6238495号

    Property Type: Patent

  9. 相変化材料および相変化型メモリ素子

    須藤 祐司, 小池 淳一, 齊藤 雄太, 鎌田 俊哉

    特許第5403565号

    Property Type: Patent

Show all Show first 5

Research Projects 20

  1. Understanding the non-equilibrium polymorphic crystallization mechanism and electronic device application

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    2023/04/01 - 2026/03/31

  2. Precise Control of Ge Nanosheet Channel Structure and Investigation of Carrier Transport through vdW Contacts

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: National Institute of Advanced Industrial Science and Technology

    2023/04/01 - 2026/03/31

  3. 非平衡ポリモルフィック結晶化メカニズムの解明と電子デバイス応用

    齊藤 雄太, Fons Paul

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(B)

    Institution: 国立研究開発法人産業技術総合研究所

    2023/04/01 - 2026/03/31

  4. Crystalline polymorphic-change memory technology

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S)

    Category: Grant-in-Aid for Scientific Research (S)

    Institution: Tohoku University

    2021/07/05 - 2026/03/31

  5. Study of spin dynamics in topological materials using ultrafast magneto-optical effects

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: University of Tsukuba

    2022/04/01 - 2025/03/31

  6. Study of spin dynamics in topological materials using ultrafast magneto-optical effects

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: University of Tsukuba

    2022/04/01 - 2025/03/31

  7. Displacive transforamtion-type polymprohic semiconductors for non-volatile memory

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2021/04/05 - 2024/03/31

  8. Exploration of novel physical properties of HfO2-based ferroelectrics by controlling polarization fluctuations

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: National Institute of Advanced Industrial Science and Technology

    2020/04/01 - 2023/03/31

  9. 遷移金属アモルファスカルコゲナイドにおける非線形電気特性の発現

    齊藤雄太

    Offer Organization: 公益財団法人 村田学術振興財団

    System: 研究助成

    2021/07 - 2022/06

  10. Understanding the crystallization mechanism of amorphous van der Waals layered materials

    FONS Paul

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: National Institute of Advanced Industrial Science and Technology

    2019/04/01 - 2022/03/31

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    In this project, focusing on the structural features of layered chalcogenides, we have elucidated the crystallization mechanism that changes the dimension of chemical bonding from 3D-amorphous to 2D-crystal, measured ultrafast dynamics under laser irradiation, and developed a deposition technique for highly oriented layered chalcogenide thin films by sputtering. Due to the high structural anisotropy in the in-plane and out-of-plane directions, specific behaviors were observed in crystallization and ultrafast phenomena. By understanding these behaviors, we have succeeded in fabricating various highly oriented layered chalcogenide thin films.

  11. 次世代デバイスに向けた二次元カルコゲナイドアモルファスの結晶化機構の解明

    齊藤雄太

    Offer Organization: 日本学術振興会

    System: 二国間交流事業

    2020/04 - 2022/03

  12. Development of d-electron based phase change chalcogenide for next generation non-volatile memory

    Sutou Yuji

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2018/04/01 - 2021/03/31

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    In this study, we focused on next-generation memory: phase-change memory which relies on the change in physical properties due to amorphous/crystalline phase change of phase-change material (PCM). We tried to develop new PCMs which can enhance phase-change memory performance. In transition-metal containing PCMs which enable lower energy-, faster speed-operation and higher heat resistance than conventional PCMs, transition-metal elements were found to form nano-clusters in the amorphous phase. The volume fraction of nano-clusters decreased with phase-change, which induces the drastic change in electrical properties. It was also found that the addition of nitrogen can suppress the formation of nano-clusters and control the electrical characteristics. Furthermore, we found a crystalline polymorphic PCM which does not require amorphization. The crystalline polymorphic phase-change material can realize phase-change memory showing ultralow energy- and ultrafast speed-operation.

  13. Realization of large capacity non-volatile memory using layered chalcogenides pn-junction selector

    Saito Yuta

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists

    Category: Grant-in-Aid for Early-Career Scientists

    Institution: National Institute of Advanced Industrial Science and Technology

    2018/04/01 - 2020/03/31

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    In this project, we aim at fabricating and realizing a novel selector material for next-generation non-volatile memory devices. Heterostructure films consisting of Bi2Te3 and Sb2Te3 were fabricated by sputtering, and material properties as well as device performance were characterized. Since the atomic interdiffusion was observed at the heterostructure interfaces, an intermediate layer was deposited to prevent diffusion. Even though the electrical characteristics of device were not desired results, a new candidate for the interlayer material was proposed that will be promising for future development.

  14. Quantum phase transition in topological insulators induced by coherent surface phonons

    Hase Muneaki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: University of Tsukuba

    2017/04/01 - 2020/03/31

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    This project aims to study coherent surface phonons in topological insulator (TI), and discuss about electron-phonon interaction at the surface. As the results of time-resolved pump-probe experiments on the surface of Sb2Te3, we uncovered the observation of dynamical Fano resonance with significant pump fluence dependence. Furthermore, we produced the alloyed film sample of Bi1-xSbx by spattering, and measured the coherent phonons. As the results, we observed a peculiar electron-phonon scattering at x=0.5, which cannot be explained by a simple alloy scattering model.

  15. Ab-initio study of topological chalcogenide van-der-Waals heterostructures and superlattices

    Kolobov Alexander, TOMINAGA Junji, FONS Paul, SAITO Yuta

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: National Institute of Advanced Industrial Science and Technology

    2016/04/01 - 2019/03/31

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    In this research project, we have carried out systematic investigations based on theoretical simulation for crystal and electronic structures of layered chalcogenide materials and their heterostructure as novel future electronics materials. The main findings of the project are (1) theoretical prediction of an electronic excitation-induced semiconductor-metal phase transition in MoTe2, (2) proposal of a MoS2 substrate for van der Waals epitaxy a few layers GaN, (3) topological band structures and stress-induced tuning thereof in GeTe/Sb2Te3 superlattice, and (4) understanding the origin of electrical contrast in GeTe/Sb2Te3 superlattice. We believe that these observations will provide important insights for future development of novel chalcogenide-based devices.

  16. A study of contact resistance between phase change material and electrode for next generation PCRAM

    Sutou Yuji, KOIKE Junichi, ANDO Daisuke, KOBAYASHI Keisuke, SONG Yun-Heub, SHINDO Satoshi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2015/04/01 - 2018/03/31

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    With the scaling down of PCRAM cells, contact resistance between phase change material (PCM) and an electrode becomes a dominant factor in determining the memory cell resistance. In this study, we investigated the contact resistivity of PCM to a metal electrode. Then, we discussed the effect of the contact resistivity on the performance of the memory cell. We found that an amorphous Cu2GeTe3 (CGT)/W contact shows schottky conduction, i.e., a CGT/W is dominated by interface conduction. Moreover, we found new PCM, Cr2Ge2Te6 (CrGT) with a high thermal stability in amorphous state. The CrGT showed inverse resistance change upon phase change (Ramo<Rcry). Although the resistivity change of the CrGT was only one order of magnitude, the contact resistivity change was found to reach two orders of magnitude upon phase change. I was also found that the CrGT memory cell achieves more than an 85% reduction in total operation energy compared with a conventional GST memory cell.

  17. 不揮発性メモリ用カルコゲナイド積層膜の作製とトポロジカル絶縁性の発現

    齊藤雄太

    Offer Organization: 公益財団法人 泉科学技術振興財団

    System: 研究助成金

    2016/10 - 2017/09

  18. Development of multi-level PCRAM showing four-resistance-level

    SUTOU YUJI, ANDO Daisuke, KOIKE Junichi, SAITO Yuta, SHINDO Satoshi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research

    Category: Grant-in-Aid for Challenging Exploratory Research

    Institution: Tohoku University

    2015/04/01 - 2017/03/31

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    Phase change random access memory called PCRAM has attracted much attention as next generation nonvolatile memory because of its simple operation principle and production cost. PCRAM is operated by way of Joule heating to induce phase change between high resistance reset amorphous state and low resistance set crystalline state of phase change material. In this study, we proposed multi-level PCRAM showing four-resistance-level which can store 2 bit data. We investigated the composition dependence of Cu-Ge-Te film showing two-step crystallization process. Based on the results, we found that 23.4Cu-28.8Ge-47.8Te(CuGT)/GeTe(GT) stack-layered memory cell can exhibits four-resistance-level, i.e., [amo.CuGT+amo.GT], [amo.CuGT*cry.GT], [cry1.CuGT+cry.GT] and [cry2.CuGT+cry.GT]. These results indicate that Cu-Ge-Te/GeTe layered structure is expected to be multi-level PCRAM.

  19. Fundamental study of phase change superlattice films and its application to electronic devices Competitive

    Saito Yuta

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Research Activity start-up

    Category: Grant-in-Aid for Research Activity start-up

    Institution: National Institute of Advanced Industrial Science and Technology

    2014/08/29 - 2016/03/31

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    In this work, comprehensive materials research was carried out for future electronic devices. Our target material is a so called superlattice structure consisting of two different chalcogenide compounds. It was found by theoretical simulation that electronic characteristics strongly depended on the choice of the compound. The physical properties of a proposed superlattice were also evaluated experimentally. Even though material fabrication is still developing, further improvements will be expected to realize a such new functional electronic device.

  20. 多段相変化型単一合金薄膜を用いた多値記録不揮発性メモリの開発 Competitive

    齊藤 雄太

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業 特別研究員奨励費

    Category: 特別研究員奨励費

    Institution: 東北大学

    2010 - 2012

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    最終年度である本年度は、新規に開発したGeCu_2Te_3(GCT)三元化合物とこのGCTを含むGeTe-CuTe擬二元化合物の諸特性について体系的に調査した。またGCTと既存材料であるGSTを組み合わせたメモリデバイスを作製することで、電流印可による多値記録動作を試みた。 これまでの研究から、GCTは低融点を有するためアモルファス化に伴う消費電力が低く、さらに結晶化温度も高くアモルファスの安定性も高いことがわかっていた。一方、メモリ用材料として用いる場合、高速書き換え動作を実現するために結晶化に要する時間も重要なパラメータになる。そこでレーザー照射装置でGCTアモルファス薄膜の結晶化、アモルファス化時間を測定した。GCTは高速結晶化材料として知られるGSTと同等の結晶化時間を示し、またアモルファス化はGSTに比べ時間、電力ともに半分程度と、レーザー試験においても低消費電力であることが確認された。これらの結果から、GCTは高耐熱性、低消費電力、高速結晶化という優れた特性を併せ持つ材料であることを明らかにした。 GeTe-CuTe擬二元合金の諸特性の組成依存性を調べた結果、GeTe、GCT両化合物から組成がずれると結晶化温度は上昇するが、結晶化時間も遅くなることがわかった。また、アモルファスと結晶の体積変化や反射率変化の組成依存性を調べた結果、GeTe-CuTe擬二元合金は結晶化に伴いGeTeとGCTに相分解することがわかった。 GCTとGSTを積層させたメモリデバイスを作製した。異なる材料を組み合わせる場合、それぞれの材料特性の関係が最適化されている必要があるが、GCTとGSTはそれらの関係を満たすことが基礎実験から確認されていた。実際に作製したデバイスの電気特性を測定すると、どちらもアモルファスの高抵抗状態、GSTのみ結晶化した中間抵抗状態、どちらも結晶化した低抵抗状態の三段階の抵抗状態を持たせることができた。また、それぞれの状態間の変化も印可電流・電圧を調整することで制御できることが確認された。

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Teaching Experience 4

  1. Introduction to Quantum Mechanics Tohoku University

  2. 電気電子デバイスシステム特別講義 Keio University

  3. 電気情報工学特別講義 Keio University

  4. 電気電子デバイスシステム特別講義 Keio University