Details of the Researcher

PHOTO

Takashi Hanada
Section
Institute for Materials Research
Job title
Assistant Professor
Degree
  • 理学博士(東京大学)

  • 理学修士(東京大学)

Researcher ID

Professional Memberships 2

  • 応用物理学会

  • 日本物理学会

Research Interests 3

  • 表面構造

  • 化合物半導体

  • 分子線エピタキシ

Research Areas 4

  • Natural sciences / Semiconductors, optical and atomic physics / Semiconductor Physics

  • Nanotechnology/Materials / Crystal engineering / Crystal Growth

  • Nanotechnology/Materials / Applied materials / Crystal Growth

  • Nanotechnology/Materials / Thin-film surfaces and interfaces / Surface and Interface physics

Papers 235

  1. Crystal growth and evaluating luminescent properties of Eu-doped (Y, Lu, Sc)<inf>2</inf>O<inf>3</inf> for optical thermometry

    Yuka Abe, Takahiko Horiai, Yuui Yokota, Masao Yoshino, Jan Pejchal, Romana Kucerkova, Rikito Murakami, Takashi Hanada, Akihiro Yamaji, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Martin Nikl, Akira Yoshikawa

    Journal of Luminescence 280 2025/05

    DOI: 10.1016/j.jlumin.2025.121118  

    ISSN: 0022-2313

  2. Crystal growth and characterization of 1-inch GTAGG: Ce single crystal for sub-micron resolution synchrotron radiation X-ray imaging

    Kazuya Omuro, Masao Yoshino, Liudmila Gushchina, Seiichi Yamamoto, Kohei Nakanishi, Kei Kamada, Karol Bartosiewicz, Kyoung Jin Kim, Takahiko Horiai, Rikito Murakami, Akihiro Yamaji, Takashi Hanada, Yuui Yokota, Shunsuke Kurosawa, Yuji Ohashi, Hiroki Sato, Jun Kataoka, Akira Yoshikawa

    Scientific Reports 15 (1) 2025/04/15

    Publisher: Springer Science and Business Media LLC

    DOI: 10.1038/s41598-025-96031-5  

    eISSN: 2045-2322

  3. Crystal Growth and Energy Transfer Study in Ce3+ and Pr3+ Co-Doped Lu2Si2O7

    Yuka Abe, Takahiko Horiai, Yuui Yokota, Masao Yoshino, Rikito Murakami, Takashi Hanada, Akihiro Yamaji, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

    Crystals 2025/02/20

    DOI: 10.3390/cryst15030202  

  4. Crystal growth and temperature dependence of luminescence characteristics of Pr3+ and Tb3+ doped solid-solution sesquioxide single crystals

    Yuka Abe, Takahiko Horiai, Yuui Yokota, Masao Yoshino, Rikito Murakami, Takashi Hanada, Akihiro Yamaji, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

    Journal of Materials Chemistry C 2025

    DOI: 10.1039/D5TC00156K  

  5. Tailoring scintillation and luminescence through Co-doping engineering: A comparative study of Ce,Tb Co-doped YAGG and GAGG garnet crystals

    Kazuya Omuro, Masao Yoshino, Karol Bartosiewicz, Takahiko Horiai, Rikito Murakami, Kyoung Jin Kim, Kei Kamada, Romana Kucerkova, Vladimir Babin, Martin Nikl, Akihiro Yamaji, Takashi Hanada, Yuui Yokota, Shunsuke Kurosawa, Yuji Ohashi, Hiroki Sato, Akira Yoshikawa

    Journal of Alloys and Compounds 1008 2024/12/15

    DOI: 10.1016/j.jallcom.2024.176550  

    ISSN: 0925-8388

  6. Insights into luminescence and energy transfer processes in Ce3+- and Tb3+ co-doped (Gd, Y)<inf>3</inf>Al<inf>2</inf>Ga<inf>3</inf>O<inf>12</inf> garnet single crystals

    Kazuya Omuro, Masao Yoshino, Karol Bartosiewicz, Takahiko Horiai, Rikito Murakami, Kyoung Jin Kim, Kei Kamada, Romana Kucerkova, Vladimir Babin, Martin Nikl, Akihiro Yamaji, Takashi Hanada, Yuui Yokota, Shunsuke Kurosawa, Yuji Ohashi, Hiroki Sato, Akira Yoshikawa

    Journal of Luminescence 273 2024/09

    DOI: 10.1016/j.jlumin.2024.120663  

    ISSN: 0022-2313

  7. Optical and scintillation properties of Pr3+-doped (La, Y)<inf>2</inf>Si<inf>2</inf>O<inf>7</inf> single crystals

    Yuka Abe, Takahiko Horiai, Jan Pejchal, Yuui Yokota, Masao Yoshino, Rikito Murakami, Takashi Hanada, Akihiro Yamaji, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa, Martin Nikl

    Optical Materials: X 22 2024/05

    DOI: 10.1016/j.omx.2024.100318  

    eISSN: 2590-1478

  8. Relationship of single crystal growth and luminescence properties of Cr-doped gadolinium gallium garnet crystals for radiation dose-rate monitoring systems

    Daisuke Matsukura, Shunsuke Kurosawa, Akihiro Yamaji, Yuji Ohashi, Yuui Yokota, Kei Kamada, Hiroki Sato, Satoshi Toyoda, Masao Yoshino, Takashi Hanada, Rikito Murakami, Takahiko Horiai, Akira Yoshikawa

    Journal of Crystal Growth 2024/03

    DOI: 10.1016/j.jcrysgro.2024.127581  

  9. Investigation of the phase diagram of the CsI-LiBr system and fabrication of the eutectic scintillator for thermal neutron detection

    Rei Sasaki, Kei Kamada, Masao Yoshino, Kyoung Jin Kim, Rikito Murakami, Takahiko Horiai, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa

    Journal of Crystal Growth 628 2024/02/15

    DOI: 10.1016/j.jcrysgro.2023.127543  

    ISSN: 0022-0248

  10. Crystal growth, luminescence, and scintillation properties of Er-doped La2Hf2O7 single crystal

    Naomoto Hayashi, Yuui Yokota, Takahiko Horiai, Kohei Yamanoi, Masao Yoshino, Akihiro Yamaji, Rikito Murakami, Takashi Hanada, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Nobuhiko Sarukura, Akira Yoshikawa

    Japanese Journal of Applied Physics 63 (3) 03SP15-03SP15 2024/02/12

    Publisher: IOP Publishing

    DOI: 10.35848/1347-4065/ad1e97  

    ISSN: 0021-4922

    eISSN: 1347-4065

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    Abstract The growth of Er-doped La2Hf2O7 (LHO:Er) single crystals with a high mp of 2413 °C was achieved by the melt-growth method using a tungsten (W) crucible. Polished LHO:Er specimens were obtained from the as-grown crystals. The full width at half maximum of the X-ray Rocking curve on the (222) diffraction peak was 599 arcsec, and the crystals have relatively low crystallinity. The photoluminescence spectra of the polished LHO:Er specimen showed emission peaks originating from the Er3+ ions in both the visible and IR wavelength ranges. It also exhibited scintillation light under X-ray irradiation.

  11. Feasibility study of one-dimensional imaging with an optical fiber for radiation dose-rate monitoring system in the decommissioning process

    Daisuke Matsukura, Shunsuke Kurosawa, Chihaya Fujiwara, Akihiro Yamaji, Yuji Ohashi, Yuui Yokota, Kei Kamada, Hiroki Sato, Yoshino Masao, Takashi Hanada, Rikito Murakami, Takahiko Horiai, Akira Yoshikawa, Takushi Takata, Hiroki Tanaka

    Journal of Instrumentation 19 (2) 2024/02/01

    DOI: 10.1088/1748-0221/19/02/C02053  

    eISSN: 1748-0221

  12. Growth of Mg2Si thermoelectric eutectics by unidirectional solidification

    Naomoto Hayashi, Yuui Yokota, Takahiko Horiai, Masao Yoshino, Akihiro Yamaji, Rikito Murakami, Takashi Hanada, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

    Journal of Crystal Growth 2024/02

    DOI: 10.1016/j.jcrysgro.2023.127533  

  13. Fabrication and Properties for Thermal Neutron Detection of 6LiCl/Rb2CeCl5 Eutectic Scintillator Peer-reviewed

    Rei Sasaki, Kei Kamada, Masao Yoshino, Kyoung Jin Kim, Rikito Murakami, Takahiko Horiai, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa

    Crystals 14 (2) 154 2024/01

    DOI: 10.3390/cryst14020154  

  14. Growth and Scintillation Properties of 6Li Containing Ce:LaCl<inf>3</inf>-Based Eutectic Scintillator for Neutron Detection

    Rei Sasaki, Kyoung Jin Kim, Kei Kamada, Ryuga Yajima, Naoko Kutsuzawa, Masao Yoshino, Rikito Murakami, Takahiko Horiai, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Isao Takahashi, Taketoshi Tomida, Vladimir V. Kochurikhin, Akira Yoshikawa

    IEEE Transactions on Nuclear Science 70 (7) 1337-1341 2023/07/01

    DOI: 10.1109/TNS.2023.3271639  

    ISSN: 0018-9499

    eISSN: 1558-1578

  15. Tl-Doped CsI/LiBr Scintillator for Thermal Neutron Detection With Ultrahigh Light Yield

    Ryuga Yajima, Kei Kamada, Masao Yoshino, Rei Sasaki, Takahiko Horiai, Rikito Murakami, Kyoung Jin Kim, Vladimir V. Kochurikhin, Yuji Ohashi, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Takashi Hanada, Akira Yoshikawa

    IEEE Transactions on Nuclear Science 70 (7) 1331-1336 2023/07/01

    DOI: 10.1109/TNS.2023.3278465  

    ISSN: 0018-9499

    eISSN: 1558-1578

  16. Prototype fabrication of optical-guiding Tl:CsI crystal scintillators and investigation of the crystallization process

    Ryuga Yajima, Kei Kamada, Rikito Murakami, Naoko Kutsuzawa, Rei Sasaki, Masao Yoshino, Takahiko Horiai, Kyoung Jin Kim, Vladimir V. Kochurikhin, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa

    Japanese Journal of Applied Physics 62 2023/04

    DOI: 10.35848/1347-4065/acb3d1  

    ISSN: 0021-4922

    eISSN: 1347-4065

  17. Fabrication and scintillation properties of a flexible optical-guiding crystal scintillator

    Ryuga Yajima, Kei Kamada, Rikito Murakami, Naoko Kutsuzawa, Rei Sasaki, Masao Yoshino, Takahiko Horiai, Kyoung Jin Kim, Vladimir V. Kochurikhin, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa

    Applied Physics Express 16 (2) 2023/02

    DOI: 10.35848/1882-0786/acb891  

    ISSN: 1882-0778

    eISSN: 1882-0786

  18. A two-stage data-analysis method for total-reflection high-energy positron diffraction (TRHEPD)

    Kazuyuki Tanaka, Izumi Mochizuki, Takashi Hanada, Ayahiko Ichimiya, Toshio Hyodo, Takeo Hoshi

    JJAP Conference Proceedings 9 011301-011301 2023

    Publisher: The Japan Society of Applied Physics

    DOI: 10.56646/jjapcp.9.0_011301  

    eISSN: 2758-2450

  19. Novel optical-guiding crystal scintillator composed of an Eu-doped SrI<inf>2</inf> core and glass cladding

    Ryuga Yajima, Kei Kamada, Yui Takizawa, Naoko Kutsuzawa, Rei Sasaki, Masao Yoshino, Takahiko Horiai, Rikito Murakami, Kyoung Jin Kim, Vladimir V. Kochurikhin, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Hanada Takashi, Akira Yoshikawa

    Ceramics International 2023

    DOI: 10.1016/j.ceramint.2022.12.264  

    ISSN: 0272-8842

  20. Fabrication and Characterization of K2CeCl5/6LiCl and CeCl3/SrCl2/6LiCl Eutectics for Thermal Neutron Detection Peer-reviewed

    Ryuga Yajima, Kei Kamada, Masao Yoshino, Yui Takizawa, Naoko Kutsuzawa, Rei Sasaki, Takahiko Horiai, Rikito Murakami, Kyoung Jin Kim, Vladimir V. Kochurikhin, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa

    Crystals 12 (12) 1795-1-1795-10 2022/12/09

    Publisher: MDPI AG

    DOI: 10.3390/cryst12121795  

    eISSN: 2073-4352

    More details Close

    In recent years, thermal neutron detection using scintillators has been used in a wide range of fields. Thus, the development of scintillators with a higher light yield, faster decay, and higher sensitivity for thermal neutrons is required. In this study, K2CeCl5/6LiCl and CeCl3/SrCl2/6LiCl were developed as novel eutectic scintillators for thermal neutron detection. LiCl was selected as the neutron capture phase and K2CeCl5 and CeCl3 were used as the scintillator phases. The eutectics of K2CeCl5/6LiCl and CeCl3/SrCl2/6LiCl were prepared using the Vertical Bridgman method and the phases were identified by scanning electron microscopy and powder X-ray diffraction measurements. The results of radioluminescence measurements under Ag source X-ray tube irradiation confirmed that the 5d-4f emission derived from Ce3+. The cathodoluminescence spectra and thermal neutron responses of the prepared eutectics were measured to evaluate their optical properties.

  21. Growth of thallium-doped CsI/CsCl/KCl eutectics and their scintillation properties Peer-reviewed

    Yui Takizawa, Kei Kamada, Masao Yoshino, Kyoung Jin Kim, Naoko Kutsuzawa, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Vladimir Kochurikhin, Akira Yoshikawa

    Optical Materials: X 15 100159-1-100159-7 2022/08

    Publisher: Elsevier BV

    DOI: 10.1016/j.omx.2022.100159  

    ISSN: 2590-1478

  22. sim-trhepd-rheed – Open-source simulator of total-reflection high-energy positron diffraction (TRHEPD) and reflection high-energy electron diffraction (RHEED) Peer-reviewed

    Takashi Hanada, Yuichi Motoyama, Kazuyoshi Yoshimi, Takeo Hoshi

    Computer Physics Communications 277 108371-1-108371-10 2022/08

    Publisher: Elsevier BV

    DOI: 10.1016/j.cpc.2022.108371  

    ISSN: 0010-4655

  23. Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method Peer-reviewed

    Ryuga Yajima, Kei Kamada, Yui Takizawa, Masao Yoshino, Rikito Murakami, Kyoung Jin Kim, Takahiko Horiai, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa

    Optical Materials: X 14 100149-1-100149-5 2022/05

    DOI: 10.1016/j.omx.2022.100149  

    eISSN: 2590-1478

  24. Growth and scintillation properties of LiBr/CeBr<inf>3</inf>eutectic scintillator for neutron detection Peer-reviewed

    Ryuga Yajima, Kei Kamada, Yui Takizawa, Masao Yoshino, Kyoung Jin Kim, Vladimir V. Kochurikhin, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa

    Japanese Journal of Applied Physics 61 (SC) 1028-1-1028-6 2022/05

    DOI: 10.35848/1347-4065/ac4076  

    ISSN: 0021-4922

    eISSN: 1347-4065

  25. Large size growth of terbium doped BaCl<inf>2</inf>/NaCl/KCl eutectic for radiation imaging Peer-reviewed

    Yui Takizawa, Kei Kamada, Kyoung Jin Kim, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Vladimir V. Kochurikhin, Akira Yoshikawa

    Japanese Journal of Applied Physics 61 (SC) 1009-1-1009-5 2022/05

    DOI: 10.35848/1347-4065/ac3b23  

    ISSN: 0021-4922

    eISSN: 1347-4065

  26. Crystal growth of La<inf>2</inf>Hf<inf>2</inf>O<inf>7</inf> by micro-pulling-down method using W crucible Peer-reviewed

    Takahiro Suda, Yuui Yokota, Takahiko Horiai, Akihiro Yamaji, Masao Yoshino, Takashi Hanada, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

    Journal of Crystal Growth 583 126547-1-126547-6 2022/04

    DOI: 10.1016/j.jcrysgro.2022.126547  

    ISSN: 0022-0248

  27. Growth and scintillation properties of Ce doped 6LiBr/LaBr<inf>3</inf> eutectic scintillator for neutron detection Peer-reviewed

    Yui Takizawa, Kei Kamada, Masao Yoshino, Kyoung Jin Kim, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Vladimir V. Kochurikhin, Akira Yoshikawa

    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1028 166384-1-166384-5 2022/04

    DOI: 10.1016/j.nima.2022.166384  

    ISSN: 0168-9002

  28. Growth and scintillation properties of directionally solidified Ce:LaCl<inf>3</inf>/AECl<inf>2</inf> (AE = Mg, Ca, Sr) eutectic Scintillators Peer-reviewed

    Kyoung Jin Kim, Kei Kamada, Rikito Murakami, Masao Yoshino, Shunsuke Kurosawa, Akihiro Yamaji, Yasuhiro Shoji, Vladimir V. Kochurikhin, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Yuui Yokota, Akira Yoshikawa

    Journal of Crystal Growth 584 126549-1-126549-5 2022/04

    DOI: 10.1016/j.jcrysgro.2022.126549  

    ISSN: 0022-0248

  29. Growth of Tb-doped BaCl<inf>2</inf>/NaCl/KCl ternary eutectic and its luminescence properties Peer-reviewed

    Yui Takizawa, Kei Kamada, Kyoung Jin Kim, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Vladimir V. Kochurikhin, Akira Yoshikawa

    Journal of Crystal Growth 580 126467-1-126467-7 2022/02/15

    DOI: 10.1016/j.jcrysgro.2021.126467  

    ISSN: 0022-0248

  30. Temperature Characteristics of Resonance Frequency for Double-Layered Thickness-Shear Resonator Peer-reviewed

    Yuji Ohashi, Yusuke Owada, Yuui Yokota, Akira Yoshikawa, Shunsuke Kurosawa, Kei Kamada, Hiroki Sato, Satoshi Toyoda, Akihiro Yamaji, Masao Yoshino, Takashi Hanada

    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 69 (2) 870-877 2022/02/01

    DOI: 10.1109/TUFFC.2021.3121782  

    ISSN: 0885-3010

    eISSN: 1525-8955

  31. Crystal growth of La<inf>2</inf>Zr<inf>2</inf>O<inf>7</inf> by micro-pulling-down method using Mo and W crucibles Peer-reviewed

    Takahiro Suda, Yuui Yokota, Takahiko Horiai, Akihiro Yamaji, Masao Yoshino, Takashi Hanada, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

    Journal of Crystal Growth 575 126357-1-126357-5 2021/12/01

    DOI: 10.1016/j.jcrysgro.2021.126357  

    ISSN: 0022-0248

  32. Growth and scintillation properties of Tl-doped CsI/KI/KCl ternary eutectics Peer-reviewed

    Yui Takizawa, Kei Kamada, Naoko Kutsuzawa, Kyoung Jin Kim, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Vladimir V. Kochurikhin, Akira Yoshikawa

    Journal of Crystal Growth 573 126287-1-126287-6 2021/11/01

    DOI: 10.1016/j.jcrysgro.2021.126287  

    ISSN: 0022-0248

  33. Crystal growth and optical properties of Ce-doped (La,Y)<inf>2</inf>Si<inf>2</inf>O<inf>7</inf> single crystal Peer-reviewed

    Takahiko Horiai, Juraj Paterek, Jan Pejchal, Marketa Jarosova, Jan Rohlicek, Shunsuke Kurosawa, Takashi Hanada, Masao Yoshino, Akihiro Yamaji, Satoshi Toyoda, Hiroki Sato, Yuji Ohashi, Kei Kamada, Yuui Yokota, Akira Yoshikawa, Martin Nikl

    Journal of Crystal Growth 572 126252-1-126252-6 2021/10/15

    DOI: 10.1016/j.jcrysgro.2021.126252  

    ISSN: 0022-0248

  34. Luminescent Properties for Garnet-Type Crystals with Fast Decay Time and Red Emission Band

    Chihaya Fujiwara, Shunsuke Kurosawa, Akihiro Yamaji, Satoshi Ishizawa, Yuji Ohashi, Yuui Yokota, Kei Kamata, Hiroki Sato, Satoshi Toyoda, Masao Yoshino, Takashi Hanada, Akira Yoshikawa

    Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials 2021/09/08

    Publisher: The Japan Society of Applied Physics

    DOI: 10.7567/ssdm.2021.k-4-05  

  35. Optimum measurement condition for V(x) method using the line-focus-beam ultrasonic-material-characterization system Peer-reviewed

    Yuji Ohashi, Yuui Yokota, Akihiro Yamaji, Masao Yoshino, Shunsuke Kurosawa, Kei Kamada, Hiroki Sato, Satoshi Toyoda, Takashi Hanada, Akira Yoshikawa

    JAPANESE JOURNAL OF APPLIED PHYSICS 60 (7) 078002-1-078002-4 2021/07

    DOI: 10.35848/1347-4065/ac06dc  

    ISSN: 0021-4922

    eISSN: 1347-4065

  36. Growth and scintillation properties of Tl-doped CsI/CsCl/NaCl ternary eutectic scintillators Peer-reviewed

    Yui Takizawa, Kei Kamada, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Vladimir. V. Kochurikhin, Akira Yoshikawa

    Japanese Journal of Applied Physics 60 (SB) SBBK01-1-SBBK01-6 2021/05/01

    Publisher: IOP Publishing

    DOI: 10.35848/1347-4065/abcdab  

    ISSN: 0021-4922

    eISSN: 1347-4065

  37. Development of Spatiotemporal Measurement and Analysis Techniques in X-ray Photoelectron Spectroscopy ∼From NAP-HARPES to 4D-XPS∼

    TOYODA Satoshi, OHASHI Yuji, KUROSAWA Shunsuke, KAMADA Kei, SATO Hiroki, YAMAJI Akihiro, YOSHINO Masao, HANADA Takashi, YOKOTA Yuui, YOSHIKAWA Akira, YAMAMOTO Tomoki, YOSHIMURA Masashi, SUMIDA Hirosuke, MINEOI Susumu, MACHIDA Masatake, YOSHIGOE Akitaka, SUZUKI Satoru, YOKOYAMA Kazushi

    Vacuum and Surface Science 64 (2) 86-91 2021

    Publisher: The Japan Society of Vacuum and Surface Science

    DOI: 10.1380/vss.64.86  

    ISSN: 2433-5835

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    <p>We have developed spatiotemporal measurement and analysis techniques in x-ray photoelectron spectroscopy. To begin with, time-division depth profiles of gate stacked film interfaces have been achieved by NAP-HARPES (Near Ambient Pressure Hard x-ray Angle-Resolved PhotoEmission Spectroscopy) data. We then have promoted our methods to quickly perform peak fittings and depth profiling from time-division ARPES data, which enables us to realize 4D-XPS analysis. It is found that the traditional maximum entropy method (MEM) combined with Jackknife averaging of sparse modeling in NAP-HARPES data is effective to perform dynamic measurement of depth profiles with high precision.</p>

  38. Crystal growth and scintillation properties of tube shape-controlled Ce-doped Y3Al5O12 single crystals grown by micro-pulling-down method Peer-reviewed

    Atsushi Kotaki, Masao Yoshino, Yuui Yokota, Takashi Hanada, Akihiro Yamaji, Satoshi Toyoda, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

    Applied Physics Express 13 (12) 125503-1-125503-4 2020/12/01

    Publisher: IOP Publishing

    DOI: 10.35848/1882-0786/abc8ab  

    ISSN: 1882-0778

    eISSN: 1882-0786

  39. Effect of Thickness Ratio of Double Layered Thickness-Shear Resonator on Temperature Characteristics of Resonance Frequency

    Yusuke Owada, Yuji Ohashi, Masaya Omote, Yuui Yokota, Shunsuke Kurosawa, Kei Kamada, Hiroki Sato, Satoshi Toyoda, Akihiro Yamaji, Masao Yoshino, Takashi Hanada, Akira Yoshikawa

    2020 IEEE International Ultrasonics Symposium (IUS) 2020-September 2020/09/07

    Publisher: IEEE

    DOI: 10.1109/ius46767.2020.9251706  

    ISSN: 1948-5719

    eISSN: 1948-5727

  40. Dependence of the V/III Ratio on Indium Incorporation in InGaN Films Grown by Metalorganic Vapour Phase Epitaxy Peer-reviewed

    V. Suresh Kumar, S. Y. Ji, Y. T. Zhang, K. Shojiki, J. H. Choi, T. Kimura, T. Hanada, R. Katayama, T. Matsuoka

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 20 (5) 2979-2986 2020/05

    DOI: 10.1166/jnn.2020.17466  

    ISSN: 1533-4880

    eISSN: 1533-4899

  41. Development of Data-Analysis Software for Total-Reflection High-Energy Positron Diffraction (TRHEPD) Peer-reviewed

    K. Tanaka, T. Hoshi, I. Mochizuki, T. Hanada, A. Ichimiya, T. Hyodo

    Acta Physica Polonica A 137 (2) 188-192 2020/02

    Publisher: Institute of Physics, Polish Academy of Sciences

    DOI: 10.12693/aphyspola.137.188  

    ISSN: 1898-794X

    eISSN: 0587-4246

  42. Thermodynamic model for metalorganic vapor-phase epitaxy of N-polar group-III nitrides in step-flow growth mode: Hydrogen, competitive adsorption, and configuration entropy Peer-reviewed

    Takashi Hanada

    Physical Review Materials 3 (10) 103404-1-103404-16 2019/10/31

    DOI: 10.1103/PhysRevMaterials.3.103404  

  43. Characterization of the ScAlMgO4 cleaving layer by X-ray crystal truncation rod scattering Peer-reviewed

    Takashi Hanada, Hiroo Tajiri, Osami Sakata, Tsuguo Fukuda, Takashi Matsuoka

    Journal of Applied Physics 123 (20) 205305-1-205305-8 2018/05/28

    Publisher: American Institute of Physics Inc.

    DOI: 10.1063/1.5031024  

    ISSN: 1089-7550 0021-8979

  44. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces Peer-reviewed

    Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 (9) 1600754-1-1600754-8 2017/09

    DOI: 10.1002/pssa.201600754  

    ISSN: 1862-6300

    eISSN: 1862-6319

  45. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy Peer-reviewed

    Jinyeop Yoo, Kanako Shojiki, Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    JAPANESE JOURNAL OF APPLIED PHYSICS 55 (5) 05FA04-1-05FA04-5 2016/05

    DOI: 10.7567/JJAP.55.05FA04  

    ISSN: 0021-4922

    eISSN: 1347-4065

  46. Homogeneity improvement of N-polar (000(1)over-bar) InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane Peer-reviewed

    Kanako Shojiki, Takashi Hanada, Tomoyuki Tanikawa, Yasuhiko Imai, Shigeru Kimura, Ryohei Nonoda, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka

    JAPANESE JOURNAL OF APPLIED PHYSICS 55 (5) 05FA09-1-05FA09-8 2016/05

    DOI: 10.7567/JJAP.55.05FA09  

    ISSN: 0021-4922

    eISSN: 1347-4065

  47. Suppression of metastable-phase inclusion in N-polar (000(1)over-bar) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Peer-reviewed

    Kanako Shojiki, Jung-Hun Choi, Takuya Iwabuchi, Noritaka Usami, Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    APPLIED PHYSICS LETTERS 106 (22) 222102-1-222102-4 2015/06

    DOI: 10.1063/1.4922131  

    ISSN: 0003-6951

    eISSN: 1077-3118

  48. Red to blue wavelength emission of N-polar (000(1)over-bar) lnGaN light-emitting diodes grown by metalorganic vapor phase epitaxy Peer-reviewed

    Kanako Shojiki, Tomoyuki Tanikawa, Jung-Hun Choi, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    APPLIED PHYSICS EXPRESS 8 (6) 061005-1-061005-4 2015/06

    DOI: 10.7567/APEX.8.061005  

    ISSN: 1882-0778

    eISSN: 1882-0786

  49. Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth Peer-reviewed

    Takashi Aisaka, Tomoyuki Tanikawa, Takeshi Kimura, Kanako Shojiki, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    JAPANESE JOURNAL OF APPLIED PHYSICS 53 (8) 085501-1-085501-4 2014/08

    DOI: 10.7567/JJAP.53.085501  

    ISSN: 0021-4922

    eISSN: 1347-4065

  50. Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation Into InGaN Grown by Metalorganic Vapor Phase Epitaxy Peer-reviewed

    J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 14 (8) 6112-6115 2014/08

    DOI: 10.1166/jnn.2014.8306  

    ISSN: 1533-4880

    eISSN: 1533-4899

  51. Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (000(1) over bar) GaN/sapphire Peer-reviewed

    Tomoyuki Tanikawa, Kanako Shojiki, Takashi Aisaka, Takeshi Kimura, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    JAPANESE JOURNAL OF APPLIED PHYSICS 53 (5) 05FL05-1-05FL05-4 2014/05

    DOI: 10.7567/JJAP.53.05FL05  

    ISSN: 0021-4922

    eISSN: 1347-4065

  52. Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN Peer-reviewed

    Kanako Shojiki, Jung-Hun Choi, Hirofumi Shindo, Takeshi Kimura, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    JAPANESE JOURNAL OF APPLIED PHYSICS 53 (5) 05FL07-1-05FL07-5 2014/05

    DOI: 10.7567/JJAP.53.05FL07  

    ISSN: 0021-4922

    eISSN: 1347-4065

  53. Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE Peer-reviewed

    Jung-Hun Choi, Kanako Shojiki, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 10 (3) 417-420 2013

    DOI: 10.1002/pssc.201200667  

    ISSN: 1862-6351

  54. Erratum: Strain relaxation mechanism of InGaN thin film grown on m-GaN [Phys. Status Solidi C 8, 444-446 (2011)]

    Takashi Hanada, Taka-aki Shimada, Shi-Yang Ji, Kenji Hobo, Yuhuai Liu, Takashi Matsuoka

    Physica Status Solidi (C) Current Topics in Solid State Physics 9 (8-9) 1856-1856 2012/08

    DOI: 10.1002/pssc.201270001  

    ISSN: 1862-6351 1610-1642

  55. Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy Peer-reviewed

    Kanako Shojiki, Takashi Hanada, Takaaki Shimada, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka

    JAPANESE JOURNAL OF APPLIED PHYSICS 51 (4) 04DH01-1-04DH01-4 2012/04

    DOI: 10.1143/JJAP.51.04DH01  

    ISSN: 0021-4922

  56. Effect of Nitridation on Indium-composition of InGaN Films Peer-reviewed

    Jung-Hun Choi, Suresh Kumar, Shi-Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    MATERIALS INTEGRATION 508 193-+ 2012

    DOI: 10.4028/www.scientific.net/KEM.508.193  

    ISSN: 1013-9826

  57. Phase diagram on phase purity of InN grown pressurized-reactor MOVPE Peer-reviewed

    Takeshi Kimura, Kiattiwut Prasertsuk, Yuantao Zhang, Yuhuai Liu, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 9 (3-4) 654-657 2012

    DOI: 10.1002/pssc.201100390  

    ISSN: 1862-6351

  58. Electrochemical isothermal-capacitance-transient spectroscopy: A new depth profiling method of deep levels Peer-reviewed

    S. Q. Wang, F. Lu, D. C. Oh, J. H. Chang, T. Hanada, T. Yao

    REVIEW OF SCIENTIFIC INSTRUMENTS 82 (9) 093905-1-093905-4 2011/09

    DOI: 10.1063/1.3632118  

    ISSN: 0034-6748

  59. Strain relaxation mechanism of InGaN thin film grown on m-GaN Peer-reviewed

    Takashi Hanada, Taka-aki Shimada, Shi-Yang Ji, Kenji Hobo, Yuhuai Liu, Takashi Matsuoka

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 8 (2) 444-446 2011

    DOI: 10.1002/pssc.201000565  

    ISSN: 1862-6351

  60. An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films Peer-reviewed

    S. W. Lee, Jun-Seok Ha, Hyun Jae Lee, Hyo-Jong Lee, H. Goto, T. Hanada, T. Goto, Katsushi Fujii, M. W. Cho, T. Yao

    JOURNAL OF PHYSICS D-APPLIED PHYSICS 43 (17) 175101-1-175101-5 2010/05

    DOI: 10.1088/0022-3727/43/17/175101  

    ISSN: 0022-3727

    eISSN: 1361-6463

  61. Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature Peer-reviewed

    Inho Im, Mina Jung, Jieun Koo, Hyunjae Lee, Jinsub Park, Tsutomu Minegishi, Seunghwan Park, Katsushi Fujii, Takafumi Yao, Gyungsuk Kil, Takashi Hanada, Jiho Chang

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 28 (1) 61-64 2010/01

    DOI: 10.1116/1.3264479  

    ISSN: 0734-2101

    eISSN: 1520-8559

  62. X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy Peer-reviewed

    J. H. Chang, M. N. Jung, J. S. Park, S. H. Park, I. H. Im, H. J. Lee, J. S. Ha, K. Fujii, T. Hanada, T. Yao, Y. Murakami, N. Ohtsu, G. S. Kil

    APPLIED SURFACE SCIENCE 255 (20) 8582-8586 2009/07

    DOI: 10.1016/j.apsusc.2009.06.034  

    ISSN: 0169-4332

  63. Lattice strain in bulk GaN epilayers grown on CrN/sapphire template Peer-reviewed

    S. W. Lee, Jun-Seok Ha, Hyun-Jae Lee, Hyo-Jong Lee, H. Goto, T. Hanada, T. Goto, Katsushi Fujii, M. W. Cho, T. Yao

    APPLIED PHYSICS LETTERS 94 (8) 082105-1-082105-3 2009/02

    DOI: 10.1063/1.3086890  

    ISSN: 0003-6951

    eISSN: 1077-3118

  64. Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks Peer-reviewed

    D. C. Oh, T. Kato, H. Goto, S. H. Park, T. Hanada, T. Yao, J. J. Kim

    APPLIED PHYSICS LETTERS 93 (24) 241907-1-241907-3 2008/12

    DOI: 10.1063/1.3033224  

    ISSN: 0003-6951

  65. The high quality ZnO growth on c-Al(2)O(3) substrate with Cr(2)O(3) buffer layer using plasma-assisted molecular beam epitaxy Peer-reviewed

    J. S. Park, S. K. Hong, T. Minegishi, I. H. Im, S. H. Park, T. Hanada, J. H. Chang, M. W. Cho, T. Yao

    APPLIED SURFACE SCIENCE 254 (23) 7786-7789 2008/09

    DOI: 10.1016/j.apsusc.2008.02.031  

    ISSN: 0169-4332

  66. Growth of polarity-controlled ZnO films on (0001) Al2O3 Peer-reviewed

    J. S. Park, J. H. Chang, T. Minegishi, H. J. Lee, S. H. Park, I. H. Im, T. Hanada, S. K. Hong, M. W. Cho, T. Yao

    JOURNAL OF ELECTRONIC MATERIALS 37 (5) 736-742 2008/05

    DOI: 10.1007/s11664-007-0350-y  

    ISSN: 0361-5235

  67. Optical properties and electrical properties of heavily Al-doped ZnSe layers Peer-reviewed

    D. C. Oh, T. Takai, I. H. Im, S. H. Park, T. Hanada, T. Yao, J. S. Song, J. H. Chang, H. Makino, C. S. Han, K. H. Koo

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26 (2) 259-264 2008/03

    DOI: 10.1116/1.2836404  

    ISSN: 0734-2101

  68. Electrical properties of conductive and resistive ZnSe layers Peer-reviewed

    D. C. Oh, I. H. Im, S. H. Park, T. Hanada, T. Yao, J. S. Song, J. H. Chang, H. Makino, C. S. Han, K. H. Koo

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26 (2) 559-565 2008/03

    DOI: 10.1116/1.2884758  

    ISSN: 1071-1023

  69. The effect of hydrogen irradiation and annealing on the low-temperature growth of homoepitaxial ZnO layers grown on (0001) ZnO substrates by plasma-assisted molecular beam epitaxy Peer-reviewed

    S. H. Park, H. Suzuki, J. H. Chang, T. Minegishi, J. S. Park, I. H. Im, G. Fujimoto, T. Hanada, D. C. Oh, M. W. Cho, T. Yao

    APPLIED SURFACE SCIENCE 254 (10) 3120-3124 2008/03

    DOI: 10.1016/j.apsusc.2007.10.083  

    ISSN: 0169-4332

  70. Study of local segregation in GaInNAs using EXAFS measurements Peer-reviewed

    Takahiro Mori, Takashi Hanada, Toshiharu Morimura, Genki Kobayashi, Takafumi Yao, Takao Miyajima, Tomoya Uruga

    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 69 (2-3) 298-301 2008/02

    DOI: 10.1016/j.jpcs.2007.07.023  

    ISSN: 0022-3697

  71. Effects of interfacial layer structures on crystal structural properties of ZnO films Peer-reviewed

    J. S. Park, T. Minegishi, S. H. Lee, I. H. Irn, S. H. Park, T. Hanada, T. Goto, M. W. Cho, T. Yao, S. K. Hong, J. H. Chang

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26 (1) 90-96 2008/01

    DOI: 10.1116/1.2821741  

    ISSN: 0734-2101

  72. Lattice relaxation mechanism of ZnO thin films grown on c-Al(2)O(3) substrates by plasma-assisted molecular-beam epitaxy Peer-reviewed

    S. H. Park, T. Hanada, D. C. Oh, T. Minegishi, H. Goto, G. Fujimoto, J. S. Park, I. H. Im, J. H. Chang, M. W. Cho, T. Yao

    APPLIED PHYSICS LETTERS 91 (23) 231904-1-231904-3 2007/12

    DOI: 10.1063/1.2813021  

    ISSN: 0003-6951

  73. Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy Peer-reviewed

    Hyo-Jong Lee, Jun-Seok Ha, S. W. Lee, H. J. Lee, H. Goto, S. H. Lee, M. W. Cho, T. Yao, T. Minegishi, T. Hanada, Soon-Ku Hong, Osami Sakata, Jae Wook Lee, Jeong Yong Lee

    APPLIED PHYSICS LETTERS 91 (20) 202116-1-202116-3 2007/11

    DOI: 10.1063/1.2815919  

    ISSN: 0003-6951

    eISSN: 1077-3118

  74. Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy Peer-reviewed

    D. C. Oh, S. W. Lee, H. Goto, S. H. Park, I. H. Im, T. Hanada, M. W. Cho, T. Yao

    APPLIED PHYSICS LETTERS 91 (13) 132112-1-132112-3 2007/09

    DOI: 10.1063/1.2786851  

    ISSN: 0003-6951

  75. Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers Peer-reviewed

    J. S. Park, S. K. Hong, T. Minegishi, S. H. Park, I. H. Im, T. Hanada, M. W. Cho, T. Yao, J. W. Lee, J. Y. Lee

    APPLIED PHYSICS LETTERS 90 (20) 201907-1-201907-3 2007/05

    DOI: 10.1063/1.2740190  

    ISSN: 0003-6951

  76. Molecular beam epitaxy and magnetic properties of GaMnNAs Peer-reviewed

    Genki Kobayashi, Takahiro Mori, Takashi Kato, Takashi Hanada, Hisao Makino, Takafumi Yao

    JOURNAL OF CRYSTAL GROWTH 301 642-646 2007/04

    DOI: 10.1016/j.jcrysgro.2006.11.159  

    ISSN: 0022-0248

    eISSN: 1873-5002

  77. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique Peer-reviewed

    S. W. Lee, T. Minegishi, W. H. Lee, H. Goto, H. J. Lee, S. H. Lee, Hyo-Jong Lee, J. S. Ha, T. Goto, T. Hanada, M. W. Cho, T. Yao

    APPLIED PHYSICS LETTERS 90 (6) 061907-1-061907-3 2007/02

    DOI: 10.1063/1.2470163  

    ISSN: 0003-6951

  78. Crystal growth Peer-reviewed

    Noboru Ohtani, Takao Nakamura, Hitoshi Sumiya, Fumio Hasegawa, Seiji Sarayama, Takashi Taniguchi, Kenji Watanabe, Shinsuke Fujiwara, Yasube Kashiwaba, Ikuo Niikura, Tsunenobu Kimoto, Takashi Egawa, Hideyo Okushi, Kentaro Onabe, Kazuyuki Tadatomo, Kazumasa Hiramatsu, Akihiko Yoshikawa, Hideo Kawanishi, Katsuhiro Akimoto, Takafumi Yao, Takashi Hanada

    Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices 329-445 2007

    Publisher: Springer Berlin Heidelberg

    DOI: 10.1007/978-3-540-47235-3_6  

  79. Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices Peer-reviewed

    S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Ch, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee, T. Yao

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 4 (1) 37-+ 2007

    DOI: 10.1002/pssc.200673552  

    ISSN: 1862-6351

  80. Structural characterization of MgO/c-Al2O3 interfaces Peer-reviewed

    T. Minegishi, T. Hanada, H. Suzuki, Z. Vashaei, D. C. Oh, K. Sumitani, O. Sakata, M. W. Cho, T. Yao

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 4 (5) 1715-+ 2007

    DOI: 10.1002/pssc.200674275  

    ISSN: 1862-6351

  81. Characterization of free-standing GaN substrates prepared by self lift-off Peer-reviewed

    S. W. Lee, H. Goto, T. Minegishi, W. H. Lee, J. S. Ha, H. J. Lee, Hyo-Jong Lee, S. H. Lee, T. Goto, T. Hanada, M. W. Cho, T. Yao

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 (7) 2617-+ 2007

    DOI: 10.1002/pssc.200674783  

    ISSN: 1862-6351

  82. Metal catalyst enhanced growth of high quality and density GaN dots on Si(111) by implant source growth Peer-reviewed

    Ryan Buckmaster, Takenari Goto, Takashi Hanada, Katsushi Fujii, Takashi Kato, Takafumi Yao

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 (7) 2314-+ 2007

    DOI: 10.1002/pssc.200674896  

    ISSN: 1862-6351

  83. Correlation between ZnO nanowire growth and the surface of AlN substrate Peer-reviewed

    Sang Hyun Lee, In-Ho Im, Hyun Jung Lee, Zahra Vashaei, Takashi Hanada, Meoung-Whan Cho, Takafumi Yao

    CRYSTAL GROWTH & DESIGN 6 (12) 2640-2642 2006/12

    DOI: 10.1021/cg060435j  

    ISSN: 1528-7483

    eISSN: 1528-7505

  84. Structural properties of CrN buffers for GaN growth Peer-reviewed

    W. H. Lee, I. H. Im, T. Minegishi, T. Hanada, M. W. Cho, T. Yao, D. C. Oh, C. S. Han, K. W. Koo, J. J. Kim, O. Sakata, K. Sumitani, S. J. Cho, H. Y. Lee, S. K. Hong, S. T. Kim

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 (3) 928-933 2006/09

    ISSN: 0374-4884

  85. Anisotropic X-ray rocking curve due to a damaged surface layer in a freestanding GaN thick film Peer-reviewed

    S. H. Park, J. H. Chang, D. C. Oh, T. Minegishi, W. H. Lee, H. Goto, H. Suzuki, G. Fujimoto, T. Hanada, T. Yao

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 (3) 934-937 2006/09

    ISSN: 0374-4884

  86. Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy Peer-reviewed

    I. H. Im, T. Minegishi, T. Hanada, S. W. Lee, D. C. Oh, J. H. Chang, M. W. Cho, T. Yao

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 (3) 908-912 2006/09

    ISSN: 0374-4884

  87. Origin of forward leakage current in GaN-based light-emitting devices Peer-reviewed

    S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee

    APPLIED PHYSICS LETTERS 89 (13) 132117 2006/09

    DOI: 10.1063/1.2357930  

    ISSN: 0003-6951

  88. Slowdown in development of self-assembled InAs/GaAs(001) dots near the critical thickness Peer-reviewed

    Takashi Hanada, Hirofumi Totsuka, Soon-Ku Hong, Kenji Godo, Kensuke Miyajima, Takenari Goto, Takafumi Yao

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 24 (4) 1886-1890 2006/07

    DOI: 10.1116/1.2219756  

    ISSN: 1071-1023

  89. Photoresponsivity of ZnO Schottky barrier diodes Peer-reviewed

    D. C. Oh, T. Suzuki, T. Hanada, T. Yao, H. Makino, H. J. Ko

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 24 (3) 1595-1598 2006/05

    DOI: 10.1116/1.2200378  

    ISSN: 1071-1023

  90. Ordering of In and Ga in epitaxially grown In0.53Ga0.47As films on (001)InP substrates Peer-reviewed

    Keesam Shin, Junghoon Yoo, Sungwook Joo, Takahiro Mori, Daisuke Shindo, Takashi Hanada, Hisao Makino, Meoungwhan Cho, Takafumi Yao, Young-Gil Park

    MATERIALS TRANSACTIONS 47 (4) 1115-1120 2006/04

    DOI: 10.2320/matertrans.47.1115  

    ISSN: 1345-9678

    eISSN: 1347-5320

  91. Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers Peer-reviewed

    D. C. Oh, T. Suzuki, H. Makino, T. Hanada, H. J. Ko, T. Yao

    Physica Status Solidi C: Conferences 3 (4) 946-951 2006

    DOI: 10.1002/pssc.200564758  

    ISSN: 1610-1634

  92. Low-Temperature Growth of AlN thin films on ZnO templates prepared on Al2O3 substrates Peer-reviewed

    In-Ho Im, Jin-Sub Park, Tsutomu Minegishi, Seung-Hwan Park, Takashi Hanada, Ji-Ho Chang, Dong-Cheol Oh, Meung-Whan Cho, Takafumi Yao

    2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES 157-+ 2006

    DOI: 10.1109/COMMAD.2006.4429904  

  93. Magnetic and crystalline properties of GaMnNAs and low-temperature annealing effect Peer-reviewed

    Genki Kobayashi, Takahiro Mori, Takashi Kato, Katsushi Fujii, Takashi Hanada, Hisao Makino, Takafumi Yao

    2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES 154-+ 2006

    DOI: 10.1109/COMMAD.2006.4429903  

  94. Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers Peer-reviewed

    DC Oh, T Suzuki, H Makino, T Hanada, HJ Ko, T Yao

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 3 (4) 946-+ 2006

    DOI: 10.1001/pssc.200564758  

    ISSN: 1862-6351

  95. Observation of a filled electronic state in the conduction band of InN Peer-reviewed

    J. J. Kim, H. Makino, K. Kobayashi, P. P. Chen, E. Ikenaga, M. Kobata, A. Takeuchi, M. Awaji, T. Hanada, M. W. Cho, T. Yao

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3 (6) 1846-1849 2006

    DOI: 10.1002/pssc.200565214  

    ISSN: 1862-6351

  96. Capacitance-voltage characteristics of ZnO/GaN heterostructures Peer-reviewed

    DC Oh, T Suzuki, JJ Kim, H Makino, T Hanada, T Yao, HJ Ko

    APPLIED PHYSICS LETTERS 87 (16) 162104-1-162104-3 2005/10

    DOI: 10.1063/1.2108107  

    ISSN: 0003-6951

  97. Experimental demonstration of Fano-type resonance in photoluminescence of ZnS : Mn/SiO2 one-dimensional photonic crystals Peer-reviewed

    T Baba, H Makino, T Mori, T Hanada, T Yao, HY Lee

    APPLIED PHYSICS LETTERS 87 (17) 171106-1-171106-3 2005/10

    DOI: 10.1063/1.2117611  

    ISSN: 0003-6951

  98. Structural variation of cubic and hexagonal MgxZn1-xO layers grown on MgO(111)/c-sapphire Peer-reviewed

    Z Vashaei, T Minegishi, H Suzuki, T Hanada, MW Cho, T Yao, A Setiawan

    JOURNAL OF APPLIED PHYSICS 98 (5) 054911-1-054911-4 2005/09

    DOI: 10.1063/1.2039273  

    ISSN: 0021-8979

  99. Soft X-ray spectroscopy of diluted magnetic semiconductor Ga1-xMxN (M = Cr, Mn) Peer-reviewed

    T Takeuchi, Y Harada, T Tokushima, Y Takata, A Chainani, JJ Kim, PP Chen, H Makino, T Hanada, T Yao, T Yamamoto, T Tsukamoto, K Kobayashi, S Shin

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 144 707-710 2005/06

    DOI: 10.1016/j.elspec.2005.01.130  

    ISSN: 0368-2048

    eISSN: 1873-2526

  100. Electronic structure of the Ga1-xCrxN studied by high-energy photoemission spectroscopy Peer-reviewed

    JJ Kim, H Makino, T Yao, Y Takata, K Kobayashi, T Yamamoto, T Hanada, MW Cho, E Ikenaga, A Yabashi, D Miwa, Y Nishino, K Tamasaku, T Ishikawa, S Shin

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 144 561-564 2005/06

    DOI: 10.1016/j.elspec.2005.01.137  

    ISSN: 0368-2048

    eISSN: 1873-2526

  101. Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy Peer-reviewed

    DC Oh, T Suzuki, JJ Kim, H Makino, T Hanada, MW Cho, T Yao, JS Song, HJ Ko

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23 (3) 1281-1285 2005/05

    DOI: 10.1116/1.1913673  

    ISSN: 1071-1023

  102. Structure and magnetic properties of Cr-doped GaN Peer-reviewed

    JJ Kim, H Makino, M Sakurai, DC Oh, T Hanada, MW Cho, T Yao, S Emura, K Kobayashi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23 (3) 1308-1312 2005/05

    DOI: 10.1116/1.1924468  

    ISSN: 1071-1023

  103. GaNAs(001) surface phases under growing condition Peer-reviewed

    T Mori, T Morimura, T Hanada, T Yao

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23 (3) 1341-1344 2005/05

    DOI: 10.1116/1.1894416  

    ISSN: 1071-1023

  104. Novel method for site-controlled surface nanodot fabrication by ion beam synthesis Peer-reviewed

    R Buckmaster, T Hanada, Y Kawazoe, MW Cho, TF Yao, N Urushihara, A Yamamoto

    NANO LETTERS 5 (4) 771-776 2005/04

    DOI: 10.1021/nl048044j  

    ISSN: 1530-6984

  105. Formation and evolution of strain-induced self-assembled dot Peer-reviewed

    T Hanada, T Yao

    MICROELECTRONICS JOURNAL 36 (3-6) 216-218 2005/03

    DOI: 10.1016/j.mejo.2005.02.009  

    ISSN: 0026-2692

  106. GaN nanodot fabrication by implant source growth Peer-reviewed

    R Buckmaster, JH Yoo, K Shin, Y Yao, T Sekiguchi, M Yokoyama, T Hanada, T Goto, M Cho, Y Kawazoe, T Yao

    MICROELECTRONICS JOURNAL 36 (3-6) 456-459 2005/03

    DOI: 10.1016/j.mejo.2005.02.046  

    ISSN: 0026-2692

  107. Step-flow growth of high quality perovskite Prl(1-x)Sr(x)MnO(3-8) thin films by plasma MBE Peer-reviewed

    G Liu, YH Feng, HM Wang, H Makino, T Hanada, T Yao

    ISTM/2005: 6th International Symposium on Test and Measurement, Vols 1-9, Conference Proceedings 2098-2100 2005

  108. ZnO/GaN heteroepitaxy Peer-reviewed

    KW Jang, DC Oh, T Minegishi, H Suzuki, T Hanada, H Makino, MW Cho, T Yao

    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS IV-ELECTRONIC AND OPTOELECTRONIC APPLICATIONS 829 491-502 2005

    ISSN: 0272-9172

  109. Electron-trap centers in ZnO layers grown by molecular-beam epitaxy Peer-reviewed

    DC Oh, T Suzuki, JJ Kim, H Makino, T Hanada, MW Cho, T Yao

    APPLIED PHYSICS LETTERS 86 (3) 032909-1-032909-3 2005/01

    DOI: 10.1063/1.1849852  

    ISSN: 0003-6951

  110. Characteristics of Schottky contacts to ZnO : N layers grown by molecular-beam epitaxy Peer-reviewed

    DC Oh, JJ Kim, H Makino, T Hanada, MW Cho, T Yao, HJ Ko

    APPLIED PHYSICS LETTERS 86 (4) 042110-1-042110-3 2005/01

    DOI: 10.1063/1.1854191  

    ISSN: 0003-6951

  111. Fabrication of self-assembled nanodots at arbitrary locations by spatially controlled implant source growth Peer-reviewed

    R Buckmaster, T Hanada, N Cho, Y Kawazoe, T Yao, N Urashihara, A Yamamoto

    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS 184 17-20 2005

    ISSN: 0951-3248

  112. Control of crystal polarity of ZnO and GaN epitaxial layers by interfacial engineering Peer-reviewed

    KW Jang, T Minegishi, T Suzuki, SK Hong, DC Oh, T Hanada, MW Cho, T Yao

    JOURNAL OF CERAMIC PROCESSING RESEARCH 6 (2) 167-183 2005

    ISSN: 1229-9162

  113. Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy Peer-reviewed

    DC Oh, T Takai, T Hanada, MW Cho, T Yao, JS Song, JH Chang, F Lu

    JOURNAL OF APPLIED PHYSICS 96 (12) 7332-7337 2004/12

    DOI: 10.1063/1.1814170  

    ISSN: 0021-8979

  114. Effect of growth interruption on the structural and optical properties of (100) InAs/InAlAs/InP nanostructures Peer-reviewed

    BH Koo, CG Lee, JH Chang, T Hanada, H Makino, T Yao, YG Park, D Shindo

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S681-S684 2004/12

    ISSN: 0374-4884

  115. Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy Peer-reviewed

    JJ Kim, H Makino, K Yamazaki, A Ino, H Namatame, M Taniguchi, T Hanada, MW Cho, T Yao

    CURRENT APPLIED PHYSICS 4 (6) 603-606 2004/11

    DOI: 10.1016/j.cap.2004.01.028  

    ISSN: 1567-1739

  116. Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAS(001) Peer-reviewed

    T Morimura, T Mori, MW Cho, T Hanada, T Yao

    CURRENT APPLIED PHYSICS 4 (6) 621-624 2004/11

    DOI: 10.1016/j.cap.2004.01.034  

    ISSN: 1567-1739

  117. Characterization of N-doped ZnO layers grown on (0001)GaN/Al2O3 substrates by molecular beam epitaxy Peer-reviewed

    DC Oh, A Setiawan, JJ Kim, H Ko, H Makino, T Hanada, MW Cho, T Yao

    CURRENT APPLIED PHYSICS 4 (6) 625-629 2004/11

    DOI: 10.1016/j.cap.2004.01.035  

    ISSN: 1567-1739

  118. Optical anisotropy of GaNAs grown on GaAS(001) substrate Peer-reviewed

    T Mori, T Hanada, T Morimura, MW Cho, T Yao

    CURRENT APPLIED PHYSICS 4 (6) 640-642 2004/11

    DOI: 10.1016/j.cap.2004.01.033  

    ISSN: 1567-1739

  119. Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN [20] Peer-reviewed

    J. J. Kim, H. Makino, K. Kobayashi, Y. Takata, T. Yamamoto, T. Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin, T. Yao

    Physical Review B - Condensed Matter and Materials Physics 70 (16) 1-4 2004/10

    DOI: 10.1103/PhysRevB.70.161315  

    ISSN: 0163-1829

  120. Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN Peer-reviewed

    JJ Kim, H Makino, K Kobayashi, Y Takata, T Yamamoto, T Hanada, MW Cho, E Ikenaga, M Yabashi, D Miwa, Y Nishino, K Tamasaku, T Ishikawa, S Shin, T Yao

    PHYSICAL REVIEW B 70 (16) 161315(R)-1-161315(R)-4 2004/10

    DOI: 10.1103/PhysRevB.70.161315  

    ISSN: 1098-0121

    eISSN: 1550-235X

  121. Surface structure of InGaAs/InP(001) ordered alloy during and after growth Peer-reviewed

    T Mori, T Hanada, T Morimura, K Shin, H Makino, T Yao

    APPLIED SURFACE SCIENCE 237 (1-4) 230-234 2004/10

    DOI: 10.1016/j.apsusc.2004.07.027  

    ISSN: 0169-4332

  122. Ordering of In and Ga in epitaxially grown In0.5Ga0.5As film on InP studied by energy-filtered electron diffraction Peer-reviewed

    Keesam Shin, Sungwwok Joo, Young-Gil Park, Takahiro Mori, Takashi Hanada, Daisuke Shindo, Hisao Makino, Meoungwhan Cho, Takafumi Yao

    Proc. of 8th Asia-Pacific Conf. on Electron Microsc. 550-551 2004/06/07

  123. Investigation of radiative and nonradiative trap centers in ZnSe : Al layers grown by molecular beam epitaxy Peer-reviewed

    DC Oh, H Makino, T Hanada, MW Cho, T Yao, JS Song, JH Chang, F Lu

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22 (3) 1475-1478 2004/05

    DOI: 10.1116/1.1755713  

    ISSN: 1071-1023

  124. Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer Peer-reviewed

    JS Song, DC Oh, H Makino, T Hanada, MW Cho, T Yao, YG Park, D Shindo, JH Chang

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22 (2) 607-610 2004/03

    DOI: 10.1116/1.1651555  

    ISSN: 1071-1023

  125. Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy Peer-reviewed

    DC Oh, JS Song, JH Chang, T Takai, T Hanada, MW Cho, T Yao

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6 (5-6) 567-571 2003/10

    DOI: 10.1016/j.mssp.2003.07.017  

    ISSN: 1369-8001

  126. High-energy photoemission spectroscopy of ferromagnetic Ga1-xMnxN Peer-reviewed

    JJ Kim, H Makino, PP Chen, T Hanada, T Yao, K Kobayashi, M Yabashi, Y Takata, T Tokushima, D Miwa, K Tamasaku, T Ishikawa, S Shin, T Yamamoto

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6 (5-6) 503-506 2003/10

    DOI: 10.1016/j.mssp.2003.07.023  

    ISSN: 1369-8001

  127. Realization of one-chip-two-wavelength light sources Peer-reviewed

    JS Song, MW Cho, DC Oh, H Makino, T Hanada, BP Zhang, Y Segawa, HS Song, IS Cho, JH Chang, T Yao

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6 (5-6) 561-565 2003/10

    DOI: 10.1016/j.mssp.2003.05.001  

    ISSN: 1369-8001

  128. Measurements of a component of the piezo-optic tensor of Si by reflectance difference spectroscopy Peer-reviewed

    T Mori, N Kumagai, T Hanada, T Yao, T Yasuda

    JOURNAL OF APPLIED PHYSICS 94 (3) 1458-1460 2003/08

    DOI: 10.1063/1.1586965  

    ISSN: 0021-8979

  129. Realization of one-chip-multiple-wavelength laser diodes with II-VI/III-V compound semiconductors Peer-reviewed

    JS Song, MW Cho, DC Oh, H Makino, T Hanada, T Yao, BP Zhang, Y Segawa, JH Chang, HS Song, IS Cho, HW Kim, JJ Jung

    APPLIED PHYSICS LETTERS 82 (23) 4095-4097 2003/06

    DOI: 10.1063/1.1578178  

    ISSN: 0003-6951

  130. MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr1-xSrx)(y)MnO3-delta oriented thin films Peer-reviewed

    GJ Liu, YH Feng, HM Wang, H Makino, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 251 (1-4) 619-622 2003/04

    DOI: 10.1016/S0022-0248(02)02202-9  

    ISSN: 0022-0248

    eISSN: 1873-5002

  131. Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy Peer-reviewed

    JS Song, JH Chang, DC Oh, JJ Kim, MW Cho, H Makino, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 249 (1-2) 128-143 2003/02

    DOI: 10.1016/S0022-0248(02)02129-2  

    ISSN: 0022-0248

  132. Molecular beam epitaxial growth of InAs quantum dots on (100) InAlAs/InP emitting at near infrared wavelength Peer-reviewed

    BH Koo, JH Chang, H Makino, T Hanada, T Yao, YG Park, D Shindo, JH Lee, CG Lee, YD Kim

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S246-S249 2003/02

    ISSN: 0374-4884

  133. Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates Peer-reviewed

    J. J. Kim, H. Makino, P. P. Chen, T. Suzuki, D. C. Oh, H. J. Ko, J. H. Chang, T. Hanada, T. Yao

    Physica Status Solidi C: Conferences (7) 2869-2873 2003

    DOI: 10.1002/pssc.200303281  

    ISSN: 1610-1634

  134. Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy Peer-reviewed

    K Godo, JH Chang, H Makino, T Hanada, H Goto, T Yao, T Goto

    2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS 0 (4) 1242-1245 2003

    DOI: 10.1002/pssc.200303058  

  135. Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates Peer-reviewed

    JJ Kim, H Makino, PP Chen, T Suzuki, DC Oh, HJ Ko, JH Chang, T Hanada, T Yao

    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS 0 (7) 2869-2873 2003

    DOI: 10.1002/pssc.200303281  

    ISSN: 1862-6351

  136. Erratum: Atomic structure of the GaAs(001)-(2×4) surface under As flux (Physical Review B-Condensed Matter and Materials Physics (2002) 65 (165315))

    Ohtake, A., Ozeki, M., Yasuda, T., Hanada, T.

    Physical Review B - Condensed Matter and Materials Physics 66 (20) 2099021 2002/11/15

    ISSN: 0163-1829

  137. Formation processes of CdTe quantum dots on ZnTe substrates studied by reflection high-energy electron diffraction and photoluminescence Peer-reviewed

    K Godo, JH Chang, H Makino, T Takai, T Hanada, T Yao, T Sasao, T Goto

    JOURNAL OF APPLIED PHYSICS 92 (9) 5490-5493 2002/11

    DOI: 10.1063/1.1513888  

    ISSN: 0021-8979

  138. Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers Peer-reviewed

    SK Hong, JH Chang, T Hanada, E Kurtz, M Oku, T Yao

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 20 (6) 1948-1954 2002/11

    DOI: 10.1116/1.1513645  

    ISSN: 0734-2101

  139. Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate Peer-reviewed

    JS Song, JH Chang, SK Hong, MW Cho, H Makino, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 242 (1-2) 95-103 2002/07

    DOI: 10.1016/S0022-0248(02)01355-6  

    ISSN: 0022-0248

  140. Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation Peer-reviewed

    N Kumagai, T Hanada, T Yao, T Yasuda

    JOURNAL OF APPLIED PHYSICS 92 (1) 139-143 2002/07

    DOI: 10.1063/1.1483917  

    ISSN: 0021-8979

  141. Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (100) InAlAs/InP substrates Peer-reviewed

    BH Koo, YG Park, H Makino, JH Chang, T Hanada, D Shindo, T Yao

    APPLIED SURFACE SCIENCE 190 (1-4) 226-230 2002/05

    DOI: 10.1016/S0169-4332(01)00876-5  

    ISSN: 0169-4332

  142. X-ray diffraction characterization of MBE grown Pr1-xSrxMnO3 thin films on NGO(110) Peer-reviewed

    G Liu, H Wang, H Makino, HJ Ko, T Hanada, T Yao

    APPLIED SURFACE SCIENCE 190 (1-4) 408-415 2002/05

    DOI: 10.1016/S0169-4332(01)00906-0  

    ISSN: 0169-4332

    eISSN: 1873-5584

  143. Control of polarity of heteroepitaxial ZnO films by interface engineering Peer-reviewed

    SK Hong, T Hanada, YF Chen, HJ Ko, T Yao, D Imai, K Araki, M Shinohara

    APPLIED SURFACE SCIENCE 190 (1-4) 491-497 2002/05

    DOI: 10.1016/S0169-4332(01)00924-2  

    ISSN: 0169-4332

  144. Atomic structure of the GaAs(001)-(2 × 4) surface under As flux

    Akihiro Ohtake, Masashi Ozeki, Tetsuji Yasuda, Takashi Hanada

    Physical Review B - Condensed Matter and Materials Physics 65 (16) 1653151-16531510 2002/04/15

    ISSN: 0163-1829

  145. Atomic structure of the GaAs(001)-(2x4) surface under As flux Peer-reviewed

    A Ohtake, M Ozeki, T Yasuda, T Hanada

    PHYSICAL REVIEW B 65 (16) 165315-1-165315-10 2002/04

    DOI: 10.1103/PhysRevB.65.165315  

    ISSN: 1098-0121

  146. Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN Peer-reviewed

    SK Hong, T Hanada, HJ Ko, YF Chen, T Yao, D Imai, K Araki, M Shinohara, K Saitoh, M Terauchi

    PHYSICAL REVIEW B 65 (11) 115331-1-115331-10 2002/03

    DOI: 10.1103/PhysRevB.65.115331  

    ISSN: 2469-9950

    eISSN: 2469-9969

  147. Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN Peer-reviewed

    Soon-Ku Hong, Takashi Hanada, Hang-Ju Ko, Yefan Chen, Takafumi Yao, Daisuke Imai, Kiyoaki Araki, Makoto Shinohara, Koh Saitoh, Masami Terauchi

    Physical Review B - Condensed Matter and Materials Physics 65 (11) 1-10 2002

    DOI: 10.1103/PhysRevB.65.115331  

    ISSN: 1550-235X 1098-0121

  148. Measurements of the linear electro-optic coefficients of ZnTe by RDS Peer-reviewed

    T Mori, N Kumagai, T Yasuda, T Takai, JH Chang, T Hanada, T Yao

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH 229 (1) 605-609 2002/01

    DOI: 10.1002/1521-3951(200201)229:1<605::AID-PSSB605>3.0.CO;2-S  

    ISSN: 0370-1972

  149. Molecular beam epitaxy of Al doped n-ZnSe Peer-reviewed

    T Takai, JH Chang, K Godo, T Hanada, T Yao

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH 229 (1) 381-384 2002/01

    DOI: 10.1002/1521-3951(200201)229:1<381::AID-PSSB381>3.0.CO;2-O  

    ISSN: 0370-1972

  150. ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy Peer-reviewed

    JH Chang, T Takai, K Godo, JS Song, BH Koo, T Hanada, T Yao

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH 229 (2) 995-999 2002/01

    DOI: 10.1002/1521-3951(200201)229:2<995::AID-PSSB995>3.0.CO;2-G  

    ISSN: 0370-1972

  151. Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1-xAlxAs/InP Peer-reviewed

    BH Koo, T Hanada, H Makino, T Yao

    APPLIED PHYSICS LETTERS 79 (26) 4331-4333 2001/12

    DOI: 10.1063/1.1428763  

    ISSN: 0003-6951

  152. Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction Peer-reviewed

    T Hanada, BH Koo, H Totsuka, T Yao

    PHYSICAL REVIEW B 64 (16) 165307-1-165307-6 2001/10

    DOI: 10.1103/PhysRevB.64.165307  

    ISSN: 1098-0121

    eISSN: 1550-235X

  153. Structural and optical properties of InAs quantum dots with 1.55 mu m emission grown on (100) InAlAs/InP by using MBE Peer-reviewed

    BH Koo, H Makino, JH Chang, T Hanada, T Yao

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY 39 (3) 466-468 2001/09

    ISSN: 0374-4884

  154. Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy Peer-reviewed

    JH Chang, T Takai, BH Koo, JS Song, T Handa, T Yao

    APPLIED PHYSICS LETTERS 79 (6) 785-787 2001/08

    DOI: 10.1063/1.1390481  

    ISSN: 0003-6951

  155. Surface structures of GaAs{111}A,B-(2 × 2)

    A. Ohtake, J. Nakamura, T. Komura, T. Hanada, T. Yao, H. Kuramochi, M. Ozeki

    Physical Review B - Condensed Matter and Materials Physics 64 (4) 453181-453188 2001/07/15

    ISSN: 0163-1829

  156. Structural characteristics and magnetic properties of lambda-MnO2 films grown by plasma-assisted molecular beam epitaxy Peer-reviewed

    LW Guo, DL Peng, H Makino, T Hanada, SK Hong, K Sumiyama, T Yao, K Inaba

    JOURNAL OF APPLIED PHYSICS 90 (1) 351-354 2001/07

    DOI: 10.1063/1.1377303  

    ISSN: 0021-8979

  157. Growth of PrSrMnO3-like thin films on NGO (110) substrates by plasma assisted MBE Peer-reviewed

    G Liu, H Wang, H Makino, HJ Ko, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 227 960-965 2001/07

    DOI: 10.1016/S0022-0248(01)00959-9  

    ISSN: 0022-0248

    eISSN: 1873-5002

  158. Structural characteristic and magnetic properties of Mn oxide films grown by plasma-assisted MBE Peer-reviewed

    LW Guo, H Makino, HJ Ko, YF Chen, T Hanada, DL Peng, K Inaba, T Yao

    JOURNAL OF CRYSTAL GROWTH 227 955-959 2001/07

    DOI: 10.1016/S0022-0248(01)00936-8  

    ISSN: 0022-0248

  159. Growth and characterization of ZnSe/BeTe superlattices Peer-reviewed

    JS Song, JH Chang, MW Cho, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 229 (1) 104-108 2001/07

    DOI: 10.1016/S0022-0248(01)01102-2  

    ISSN: 0022-0248

  160. ZnO epilayers on GaN templates: Polarity control and valence-band offset Peer-reviewed

    SK Hong, T Hanada, H Makino, HJ Ko, YF Chen, T Yao, A Tanaka, H Sasaki, S Sato, D Imai, K Araki, M Shinohara

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19 (4) 1429-1433 2001/07

    DOI: 10.1116/1.1374630  

    ISSN: 1071-1023

  161. Surface structures of GaAs{111}A,B-(2X2) Peer-reviewed

    A Ohtake, J Nakamura, T Komura, T Hanada, T Yao, H Kuramochi, M Ozeki

    PHYSICAL REVIEW B 64 (4) 045318-1-045318-8 2001/07

    DOI: 10.1103/PhysRevB.64.045318  

    ISSN: 1098-0121

    eISSN: 1550-235X

  162. RHEED investigation of the formation process of InAs quantum dots on (100) InAlAs/InP for application to photonic devices in the 1.55 mu m range Peer-reviewed

    BH Koo, T Hanada, H Makino, JH Chang, T Yao

    JOURNAL OF CRYSTAL GROWTH 229 (1) 142-146 2001/07

    DOI: 10.1016/S0022-0248(01)01109-5  

    ISSN: 0022-0248

  163. ZnO and related materials: Plasma-assisted molecular beam epitaxial growth, characterization, and application Peer-reviewed

    SK Hong, Y Chen, HJ Ko, H Wenisch, T Hanada, T Yao

    JOURNAL OF ELECTRONIC MATERIALS 30 (6) 647-658 2001/06

    DOI: 10.1007/BF02665850  

    ISSN: 0361-5235

  164. Band alignment at a ZnO/GaN (0001) heterointerface Peer-reviewed

    SK Hong, T Hanada, H Makino, YF Chen, HJ Ko, T Yao, A Tanaka, H Sasaki, S Sato

    APPLIED PHYSICS LETTERS 78 (21) 3349-3351 2001/05

    DOI: 10.1063/1.1372339  

    ISSN: 0003-6951

  165. Strain relaxation of self-assembled InAs/GaAs(001) quantum dots observed by reflection high-energy electron diffraction Peer-reviewed

    T Hanada, H Totsuka, T Yao

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 (3B) 1878-1881 2001/03

    DOI: 10.1143/JJAP.40.1878  

    ISSN: 0021-4922

  166. Surface structures of (formula presented) Peer-reviewed

    Akihiro Ohtake, Jun Nakamura, Takuji Komura, Takashi Hanada, Takafumi Yao, Hiromi Kuramochi, Masashi Ozeki

    Physical Review B - Condensed Matter and Materials Physics 64 (4) 2001

    DOI: 10.1103/PhysRevB.64.045318  

    ISSN: 1550-235X 1098-0121

  167. Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers Peer-reviewed

    SK Hong, E Kurtz, JH Chang, T Hanada, M Oku, T Yao

    APPLIED PHYSICS LETTERS 78 (2) 165-167 2001/01

    DOI: 10.1063/1.1339262  

    ISSN: 0003-6951

  168. Growth of Self-Assembled InAs Quantum Dots on(100)InAlAs/InP by Molecular Beam Epitaxy Peer-reviewed

    B. H. Koo, T. Hanada, H. Makino, Y. G. Park, D. Shindo, T. Yao

    Proc. 6th Int. Symp. Advanced Physical Fields 387-391 2001

  169. Structural and Optical Properties of MBE Grown InAs Quantum Dots on (100) InAlAs/InP with 1.55 mm Emission Peer-reviewed

    B. H. Koo, H. Makino, J. H. Chang, T. Hanada, T. Yao

    J. Korean Phys. Soc. 39 466-468 2001

  170. Strain- and field-induced optical anisotropies of GaAs measured by RDS Peer-reviewed

    N Kumagai, T Yasuda, T Hanada, T Yao

    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II 87 109-110 2001

    ISSN: 0930-8989

  171. Control of polarity of ZnO films grown by plasma-assisted molecular beam epitaxy: Growth of Zn- and O-polar ZnO films on Ga-polar GaN epilayers Peer-reviewed

    SK Hong, T Hanada, HJ Ko, Y Chen, T Yao, D Imai, K Araki, M Shinohara

    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II 87 1507-1508 2001

    ISSN: 0930-8989

  172. Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates Peer-reviewed

    SK Hong, T Hanada, HJ Ko, Y Chen, T Yao, D Imai, K Araki, M Shinohara

    APPLIED PHYSICS LETTERS 77 (22) 3571-3573 2000/11

    DOI: 10.1063/1.1329865  

    ISSN: 0003-6951

  173. Growth of GaN single crystals from a Na-Ga melt at 750 degrees C and 5 MPa of N-2 Peer-reviewed

    M Aoki, H Yamane, M Shimada, T Sekiguchi, T Hanada, T Yao, S Sarayama, FJ DiSalvo

    JOURNAL OF CRYSTAL GROWTH 218 (1) 7-12 2000/09

    DOI: 10.1016/S0022-0248(00)00518-2  

    ISSN: 0022-0248

  174. Adsorption processes of Se on the GaAs(111)A-(2x2) surface Peer-reviewed

    A Ohtake, T Komura, T Hanada, S Miwa, T Yasuda, T Yao

    APPLIED SURFACE SCIENCE 162 419-424 2000/08

    DOI: 10.1016/S0169-4332(00)00226-9  

    ISSN: 0169-4332

  175. Structural and optical properties of high-quality ZnTe homoepitaxial layers Peer-reviewed

    JH Chang, MW Cho, HM Wang, H Wenisch, T Hanada, T Yao, K Sato, O Oda

    APPLIED PHYSICS LETTERS 77 (9) 1256-1258 2000/08

    DOI: 10.1063/1.1290155  

    ISSN: 0003-6951

  176. ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3 Peer-reviewed

    SK Hong, HJ Ko, Y Chen, T Hanada, T Yao

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18 (4) 2313-2321 2000/07

    DOI: 10.1116/1.1303809  

    ISSN: 1071-1023

  177. Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3 Peer-reviewed

    SK Hong, HJ Ko, YF Chen, T Hanada, T Yao

    APPLIED SURFACE SCIENCE 159 441-448 2000/06

    DOI: 10.1016/S0169-4332(00)00053-2  

    ISSN: 0169-4332

  178. Evolution of initial layers of plasma-assisted MBE grown ZnO on (0001)GaN/sapphire Peer-reviewed

    SK Hong, HJ Ko, YF Chen, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 214 81-86 2000/06

    DOI: 10.1016/S0022-0248(00)00070-1  

    ISSN: 0022-0248

  179. In situ measurement of carrier concentration in n-ZnSe by reflectance difference spectroscopy (RDS) Peer-reviewed

    N Kumagai, T Yasuda, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 214 547-551 2000/06

    DOI: 10.1016/S0022-0248(00)00149-4  

    ISSN: 0022-0248

  180. Self-organized formation processes of CdSe quantum dots studied by reflection high-energy electron diffraction Peer-reviewed

    K Arai, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 214 703-706 2000/06

    DOI: 10.1016/S0022-0248(00)00185-8  

    ISSN: 0022-0248

  181. Optical properties of ZnMgSeTe quaternary alloys grown on ZnTe substrates by molecular-beam epitaxy Peer-reviewed

    JH Chang, HM Wang, MW Cho, H Makino, H Hanada, T Yao, K Shim, H Rabitz

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18 (3) 1530-1533 2000/05

    DOI: 10.1116/1.591420  

    ISSN: 1071-1023

  182. The effect of magnesium oxide buffer on the epitaxial growth of zinc oxide on sapphire Peer-reviewed

    YF Chen, HJ Ko, SK Hong, T Hanada, T Yao, Y Segawa

    RECENT DEVELOPMENTS IN OXIDE AND METAL EPITAXY-THEORY AND EXPERIMENT 619 123-128 2000

    ISSN: 0272-9172

  183. Surface reconstruction and crystal structure of MgSe films grown on ZnTe substrates by MBE Peer-reviewed

    HM Wang, JH Chang, T Hanada, K Arai, T Yao

    JOURNAL OF CRYSTAL GROWTH 208 (1-4) 253-258 2000/01

    DOI: 10.1016/S0022-0248(99)00451-0  

    ISSN: 0022-0248

  184. Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF2 by two-step MBE Peer-reviewed

    HJ Ko, YF Chen, Z Zhu, T Hanada, T Yao

    JOURNAL OF CRYSTAL GROWTH 208 (1-4) 389-394 2000/01

    DOI: 10.1016/S0022-0248(99)00510-2  

    ISSN: 0022-0248

  185. Observation of bulk Bragg-reflection using reflection high-energy electron diffraction on Mn3O4-like films grown on MgO (001) by molecular beam epitaxy Peer-reviewed

    LW Guo, T Hanada, HJ Ko, YF Chen, H Makino, T Yao

    SURFACE SCIENCE 445 (2-3) 151-158 2000/01

    DOI: 10.1016/S0039-6028(99)01018-3  

    ISSN: 0039-6028

  186. Self-assembled formation of ZnCdSe quantum dots on atomically smooth ZnSe surfaces on GaAs(001) by molecular beam epitaxy Peer-reviewed

    K Arai, A Ohtake, T Hanada, S Miwa, T Yasuda, Y Yao

    THIN SOLID FILMS 357 (1) 1-7 1999/12

    DOI: 10.1016/S0040-6090(99)00464-2  

    ISSN: 0040-6090

  187. Two-step MBE growth of ZnO layers on electron beam exposed (111)CaF2 Peer-reviewed

    HJ Ko, YF Chen, JM Ko, T Hanada, Z Zhu, T Fukuda, T Yao

    JOURNAL OF CRYSTAL GROWTH 207 (1-2) 87-94 1999/11

    DOI: 10.1016/S0022-0248(99)00345-0  

    ISSN: 0022-0248

  188. Real-time analysis of adsorption processes of Zn on the GaAs(001)-(2 x 4) surface Peer-reviewed

    A Ohtake, T Yasuda, T Hanada, T Yao

    PHYSICAL REVIEW B 60 (12) 8713-8718 1999/09

    DOI: 10.1103/PhysRevB.60.8713  

    ISSN: 1098-0121

    eISSN: 1550-235X

  189. Structure and composition of the ZnSe(001) surface during atomic-layer epitaxy Peer-reviewed

    A Ohtake, T Hanada, T Yasuda, K Arai, T Yao

    PHYSICAL REVIEW B 60 (11) 8326-8332 1999/09

    DOI: 10.1103/PhysRevB.60.8326  

    ISSN: 1098-0121

    eISSN: 1550-235X

  190. In situ observation of strain-induced optical anisotropy of ZnSxSe1-x/GaAs(110) during molecular-beam epitaxy Peer-reviewed

    T Hanada, T Yasuda, A Ohtake, K Hingerl, S Miwa, K Arai, T Yao

    PHYSICAL REVIEW B 60 (12) 8909-8914 1999/09

    DOI: 10.1103/PhysRevB.60.8909  

    ISSN: 1098-0121

    eISSN: 1550-235X

  191. Adsorption of Zn on the GaAs(001)-(2x4) surface Peer-reviewed

    A Ohtake, T Hanada, T Yasuda, T Yao

    APPLIED PHYSICS LETTERS 74 (20) 2975-2977 1999/05

    DOI: 10.1063/1.123984  

    ISSN: 0003-6951

  192. Atomic layer epitaxy processes of ZnSe on GaAs(001) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS) Peer-reviewed

    A Ohtake, T Hanada, K Arai, T Komura, S Miwa, K Kimura, T Yasuda, CG Jin, TF Yao

    JOURNAL OF CRYSTAL GROWTH 201 490-493 1999/05

    DOI: 10.1016/S0022-0248(98)01383-9  

    ISSN: 0022-0248

  193. Structure of Se-adsorbed GaAs(111)A-(2 root 3x2 root 3)-R30 degrees surface Peer-reviewed

    A Ohtake, T Komura, T Hanada, S Miwa, T Yasuda, K Arai, T Yao

    PHYSICAL REVIEW B 59 (12) 8032-8036 1999/03

    DOI: 10.1103/PhysRevB.59.8032  

    ISSN: 1098-0121

    eISSN: 1550-235X

  194. X-ray reflectivity from ZnSe/GaAs heterostructures Peer-reviewed

    A Ulyanenkov, A Takase, M Kuribayashi, K Ishida, A Ohtake, K Arai, T Hanada, T Yasuda, T Yao

    JOURNAL OF APPLIED PHYSICS 85 (3) 1520-1523 1999/02

    DOI: 10.1063/1.369281  

    ISSN: 0021-8979

  195. Characterization and control of ZnSe/GaAs heterovalent interfaces in molecular-beam epitaxy Invited Peer-reviewed

    T Hanada, T Yasuda, A Ohtake, S Miwa, T Yao

    LATTICE MISMATCHED THIN FILMS 81-86 1999

  196. In situ determination of in-plane strain anisotropy in ZnSe(001)/GaAs layers using reflectance difference spectroscopy Peer-reviewed

    K Hingerl, T Yasuda, T Hanada, S Miwa, K Kimura, A Ohtake, T Yao

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 (4) 2342-2349 1998/07

    DOI: 10.1116/1.590172  

    ISSN: 1071-1023

  197. The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100) Peer-reviewed

    H Totsuka, E Kurtz, T Hanada, Z Zhu, T Yao

    APPLIED SURFACE SCIENCE 130 742-746 1998/06

    DOI: 10.1016/S0169-4332(98)00147-0  

    ISSN: 0169-4332

  198. Properties of self-organized CdSe quantum dots on an atomically flat (111)A ZnSe surface Peer-reviewed

    E Kurtz, HD Jung, T Hanada, Z Zhu, T Yao

    APPLIED SURFACE SCIENCE 130 755-759 1998/06

    DOI: 10.1016/S0169-4332(98)00149-4  

    ISSN: 0169-4332

  199. Scanning tunneling microscopy study of the initial reaction of SiH(2)Cl(2) molecules with the Si(111)-7x7 surface Peer-reviewed

    T Komura, S Okano, K Morikawa, T Hanada, M Yoshimura, T Yao

    APPLIED SURFACE SCIENCE 130 23-28 1998/06

    DOI: 10.1016/S0169-4332(98)00019-1  

    ISSN: 0169-4332

  200. Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis Peer-reviewed

    HD Jung, N Kumagai, T Hanada, Z Zhu, T Yao, T Yasuda, K Kimura

    JOURNAL OF APPLIED PHYSICS 83 (10) 5497-5503 1998/05

    DOI: 10.1063/1.367409  

    ISSN: 0021-8979

    eISSN: 1089-7550

  201. Growth of ZnSe on GaAs(1 1 0) surfaces by molecular beam epitaxy Peer-reviewed

    KW Koh, MW Cho, Z Zhu, T Hanada, KH Yoo, M Isshiki, T Yao

    JOURNAL OF CRYSTAL GROWTH 186 (4) 528-534 1998/04

    DOI: 10.1016/S0022-0248(97)00831-2  

    ISSN: 0022-0248

  202. Growth of ZnSe on GaAs(1 1 0) surfaces by molecular beam epitaxy Peer-reviewed

    KW Koh, MW Cho, Z Zhu, T Hanada, KH Yoo, M Isshiki, T Yao

    JOURNAL OF CRYSTAL GROWTH 186 (4) 528-534 1998/04

    DOI: 10.1016/S0022-0248(98)80291-1  

    ISSN: 0022-0248

  203. Self-organized CdSe/ZnSe quantum dots on a ZnSe(111)A surface Peer-reviewed

    E Kurtz, HD Jung, T Hanada, Z Zhu, T Sekiguchi, T Yao

    JOURNAL OF CRYSTAL GROWTH 184 242-247 1998/02

    DOI: 10.1016/S0022-0248(98)80052-3  

    ISSN: 0022-0248

  204. Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy Peer-reviewed

    N Kumagai, HD Jung, T Hanada, Z Zhu, T Yasuda, K Kimura, SD Lee, MH Jeon, HS Park, TI Kim, T Yao

    JOURNAL OF CRYSTAL GROWTH 184 505-509 1998/02

    DOI: 10.1016/S0022-0248(98)80105-X  

    ISSN: 0022-0248

  205. Investigation of the surfactant effect of Sn in ZnSe by reflectance difference spectroscopy and reflection high-energy electron diffraction Peer-reviewed

    HD Jung, N Kumagai, T Hanada, E Kurtz, Z Zhu, T Yao

    JOURNAL OF CRYSTAL GROWTH 184 223-227 1998/02

    DOI: 10.1016/S0022-0248(98)80049-3  

    ISSN: 0022-0248

  206. In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces Peer-reviewed

    HD Jung, N Kumagai, T Hanada, Z Zhu, T Yao, T Yasuda, K Kimura

    JOURNAL OF APPLIED PHYSICS 82 (9) 4684-4686 1997/11

    DOI: 10.1063/1.366209  

    ISSN: 0021-8979

    eISSN: 1089-7550

  207. Photoelectron diffraction of the Si(111)-(root 3x root 3)R30 degrees-Ga surface: Local atomic structure and vibrational correlation Peer-reviewed

    T Hanada, H Daimon, S Nagano, S Ino, S Suga, Y Murata

    PHYSICAL REVIEW B 55 (24) 16420-16425 1997/06

    DOI: 10.1103/PhysRevB.55.16420  

    ISSN: 0163-1829

  208. Photoelectron diffraction of the Si(111)-×)R30°-Ga surface: Local atomic structureand vibrational correlation Peer-reviewed

    T. Hanada, H. Daimon

    Physical Review B - Condensed Matter and Materials Physics 55 (24) 16420-16425 1997

    DOI: 10.1103/PhysRevB.55.16420  

    ISSN: 1550-235X 1098-0121

  209. Growth and photoluminescence properties of self-organized CdSe quantum dots on a (111)A ZnSe surface Peer-reviewed

    Kurtz, E., Jung, H.D., Hanada, T., Zhu, Z., Sekiguchi, T., Yao, T.

    Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics 18 (2-4) 93-98 1997

  210. ELECTRON STANDING-WAVE AT A SURFACE DURING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ADATOM HEIGHT DETERMINATION Peer-reviewed

    T YAMANAKA, T HANADA, S INO

    PHYSICAL REVIEW LETTERS 75 (4) 669-672 1995/07

    DOI: 10.1103/PhysRevLett.75.669  

    ISSN: 0031-9007

  211. ROCKING-CURVE ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION FROM THE SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-AL, SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-GA, AND SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-IN SURFACE Peer-reviewed

    T HANADA, H DAIMON, S INO

    PHYSICAL REVIEW B 51 (19) 13320-13325 1995/05

    DOI: 10.1103/PhysRevB.51.13320  

    ISSN: 0163-1829

  212. In-situ Observation of Undevelopment Patterns in Atomic Force Microscope Liothography Peer-reviewed

    Takao Shiokawa, Yoshinobu Aoyagi, Takashi Hanada, Takuo Sugano, Masatsugu Shigeno

    Journal of Photopolymer Science and Technology 8 (4) 677-678 1995

    DOI: 10.2494/photopolymer.8.677  

    ISSN: 1349-6336 0914-9244

  213. LAYER CONTROLLED GROWTH OF OXIDE SUPERCONDUCTORS Peer-reviewed

    M KAWAI, ZY LIU, T HANADA, M KATAYAMA, M AONO, CF MCCONVILLE

    APPLIED SURFACE SCIENCE 82-3 487-493 1994/12

    DOI: 10.1016/0169-4332(94)90263-1  

    ISSN: 0169-4332

  214. ATOMIC LAYER CONTROL IN SR-CU-O ARTIFICIAL LATTICE GROWTH Peer-reviewed

    ZY LIU, T HANADA, R SEKINE, M KAWAI, H KOINUMA

    APPLIED PHYSICS LETTERS 65 (13) 1717-1719 1994/09

    DOI: 10.1063/1.112896  

    ISSN: 0003-6951

  215. SURFACE-REACTIONS AT THE CONTROLLED STRUCTURE OF SRTIO3(001) Peer-reviewed

    M KUDO, T HIKITA, T HANADA, R SEKINE, M KAWAI

    SURFACE AND INTERFACE ANALYSIS 22 (1-12) 412-416 1994/07

    DOI: 10.1002/sia.740220189  

    ISSN: 0142-2421

  216. STUDY OF THE SI(111)7X7 SURFACE BY RHEED ROCKING CURVE ANALYSIS Peer-reviewed

    T HANADA, S INO, H DAIMON

    SURFACE SCIENCE 313 (1-2) 143-154 1994/06

    DOI: 10.1016/0039-6028(94)91162-2  

    ISSN: 0039-6028

  217. SURFACE-STRUCTURE OF SRTIO3(001) WITH VARIOUS SURFACE TREATMENTS Peer-reviewed

    T HIKITA, T HANADA, M KUDO, M KAWAI

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 11 (5) 2649-2654 1993/09

    DOI: 10.1116/1.578620  

    ISSN: 0734-2101

  218. STRUCTURE AND ELECTRONIC STATE OF THE TIO2 AND SRO TERMINATED SRTIO3(100) SURFACES Peer-reviewed

    T HIKITA, T HANADA, M KUDO, M KAWAI

    SURFACE SCIENCE 287 377-381 1993/05

    DOI: 10.1016/0039-6028(93)90806-U  

    ISSN: 0039-6028

  219. GLANCING ANGLE DEPENDENCE OF THE X-RAY-EMISSION MEASURED UNDER TOTAL REFLECTION ANGLE X-RAY SPECTROSCOPY (TRAXS) CONDITION DURING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION Peer-reviewed

    T YAMANAKA, T HANADA, S INO, H DAIMON

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 31 (10B) L1503-L1505 1992/10

    ISSN: 0021-4922

  220. MOLECULAR-BEAM EPITAXIAL-GROWTH OF SUPERCONDUCTING BA2DYCU3O6.5 THIN-FILMS AT 420-DEGREES-C USING NO2 AS AN OXIDANT Peer-reviewed

    K NORIMOTO, R SEKINE, M MORI, T HANADA, M KUDO, M KAWAI

    APPLIED PHYSICS LETTERS 61 (16) 1971-1973 1992/10

    DOI: 10.1063/1.108333  

    ISSN: 0003-6951

  221. REACTION BETWEEN COPPER DIPIVALOYLMETHANATE CU(DPM)2 AND H2O ADSORBED ON SRTIO3(100) Peer-reviewed

    T HIKITA, R SEKINE, T HANADA, M KAWAI

    SURFACE SCIENCE 262 (3) L139-L143 1992/02

    DOI: 10.1016/0039-6028(92)90123-N  

    ISSN: 0039-6028

  222. Glancing angle dependence of the x-ray emission measured under total reflection angle x-ray spectroscopy (Traxs) condition during reflection high energy electron diffraction observation Peer-reviewed

    Toshiro Yamanaka, Shozo Ino, Takashi Hanada, Hiroshi Daimon

    Japanese Journal of Applied Physics 31 (10) L1503-L1505 1992

    DOI: 10.1143/JJAP.31.L1503  

    ISSN: 1347-4065 0021-4922

  223. ULTRA THIN-FILM OF BI CUPRATE GROWN BY A LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY Peer-reviewed

    M KAWAI, A YANASE, ZY LIU, M MORI, S WATANABE, T HANADA

    PHYSICA C 185 2057-2058 1991/12

    DOI: 10.1016/0921-4534(91)91153-U  

    ISSN: 0921-4534

  224. STRUCTURE AND GROWTH-MECHANISM OF ULTRATHIN FILMS OF BI CUPRATES GROWN BY LOW-TEMPERATURE MBE Peer-reviewed

    M KAWAI, T HANADA, M KUDO, N ISHIZAWA, T GODA, S TERATANI

    PHYSICA C 190 (1-2) 27-30 1991/12

    DOI: 10.1016/S0921-4534(05)80188-1  

    ISSN: 0921-4534

  225. SELECTIVE SURFACE-REACTION BETWEEN METAL-COMPOUNDS AND SURFACE FUNCTIONAL-GROUPS Peer-reviewed

    T HIKITA, R SEKINE, T HANADA, M KAWAI

    PHYSICA C 190 (1-2) 148-150 1991/12

    DOI: 10.1016/S0921-4534(05)80232-1  

    ISSN: 0921-4534

  226. MOLECULAR-BEAM EPITAXY OF BI2SR2CUOX AND BI2SR2CA0.85SR0.15CU2OX ULTRA THIN-FILMS AT 300-DEGREES-C Peer-reviewed

    M KAWAI, S WATANABE, T HANADA

    JOURNAL OF CRYSTAL GROWTH 112 (4) 745-752 1991/07

    DOI: 10.1016/0022-0248(91)90131-N  

    ISSN: 0022-0248

  227. STUDY OF SUCCESSIVE PHASE-TRANSITIONS OF THE SI(001)-BI SURFACE BY RHEED Peer-reviewed

    T HANADA, M KAWAI

    SURFACE SCIENCE 242 (1-3) 137-142 1991/02

    DOI: 10.1016/0039-6028(91)90255-Q  

    ISSN: 0039-6028

  228. THE REACTION OF COPPER AND CALCIUM DIPIVALOYLMETHANATES (CU(DPM)2 AND CA(DPM)2) WITH HYDROXYLS ON OXIDE SURFACE Peer-reviewed

    R SEKINE, M KAWAI, T HIKITA, T HANADA

    SURFACE SCIENCE 242 (1-3) 508-512 1991/02

    DOI: 10.1016/0039-6028(91)90318-M  

    ISSN: 0039-6028

  229. INSITU RHEED AND XPS STUDIES ON CERAMIC LAYER EPITAXY IN UHV SYSTEM Peer-reviewed

    H KOINUMA, M YOSHIMOTO, H NAGATA, T HASHIMOTO, T TSUKAHARA, S GONDA, S WATANABE, M KAWAI, T HANADA

    SUPERCONDUCTIVITY AND ITS APPLICATIONS // 219 326-335 1991

  230. ULTRATHIN FILM OF BI2SR2CUOX FORMED BY MOLECULAR-BEAM EPITAXY USING NO2 Peer-reviewed

    M KAWAI, S WATANABE, T HANADA

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 8 (6) 4104-4105 1990/11

    DOI: 10.1116/1.576448  

    ISSN: 0734-2101

  231. MOLECULAR-BEAM EPITAXY STUDY OF BI2SR2CUOX USING NO2 AS AN OXIDIZING-AGENT Peer-reviewed

    S WATANABE, M KAWAI, T HANADA

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 (7) L1111-L1113 1990/07

    DOI: 10.1143/JJAP.29.L1111  

    ISSN: 0021-4922

  232. SURFACE-STRUCTURE AND OXIDATION OF SI(001)-BI Peer-reviewed

    T HANADA, M KAWAI

    VACUUM 41 (1-3) 650-651 1990

    DOI: 10.1016/0042-207X(90)90444-4  

    ISSN: 0042-207X

  233. STUDY ON THE ELEMENTARY STEPS OF THE EPITAXIAL-GROWTH OF BI-SR-CA-CU-O ON THE SURFACE OF SI AND MGO BY MEANS OF RHEED AND PHOTOELECTRON SPECTROSCOPIES Peer-reviewed

    T HANADA, M KAWAI, T GODA, S TERATANI

    HIGH-TEMPERATURE SUPERCONDUCTORS : FUNDAMENTAL PROPERTIES AND NOVEL MATERIALS PROCESSING 169 715-717 1990

  234. STUDY OF SI(111)SQUARE-ROOT-3 X SQUARE-ROOT-3-AL SURFACE-STRUCTURE BY KINETIC-ENERGY DEPENDENCE OF POLAR-ANGLE PHOTOELECTRON DIFFRACTION Peer-reviewed

    H DAIMON, S NAGANO, T HANADA, S INO, S SUGA, Y MURATA

    SURFACE SCIENCE 221 (1-2) 244-252 1989/10

    DOI: 10.1016/0039-6028(89)90578-5  

    ISSN: 0039-6028

    eISSN: 1879-2758

  235. RHEED螢光X線分光による表面物性の研究

    井野 正三, 山本 陽一, 長谷川 修司, 稲本 直大, 花田 貴, 大門 寛

    日本結晶学会誌 25 16A-11-16A-11 1983

    Publisher: The Crystallographic Society of Japan

    DOI: 10.5940/jcrsj.25.Supplement_16A-11  

    ISSN: 0369-4585

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    大橋雄二, 野口太生, 面政也, 横田有為, 村上力輝斗, 黒澤俊介, 鎌田圭, 佐藤浩樹, 豊田智史, 堀合毅彦, 山路晃広, 吉野将生, 花田貴, 吉川彰, 吉川彰

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

    ISSN: 2436-7613

  2. Relationship between Resistivity and Composition of Ru-Mo-W system and single crystal wire grown by the dewetting micro-pulling-down method

    米村虎太朗, 米村虎太朗, 村上力輝斗, 糸井椎香, 鎌田圭, 鎌田圭, 堀合毅彦, 堀合毅彦, 花田貴, 山路晃広, 山路晃広, 吉野将生, 吉野将生, 佐藤浩樹, 佐藤浩樹, 大橋雄二, 大橋雄二, 黒澤俊介, 黒澤俊介, 横田有為, 横田有為, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

    ISSN: 2758-4704

  3. Control of local structure and thermoelectric properties for Mg2Si/Si thermoelectric crystals with eutectic structure

    林直志, 林直志, 横田有為, 横田有為, 堀合毅彦, 堀合毅彦, 吉野将生, 吉野将生, 山路晃広, 山路晃広, 村上力輝斗, 花田貴, 佐藤浩樹, 佐藤浩樹, 大橋雄二, 大橋雄二, 黒澤俊介, 黒澤俊介, 鎌田圭, 鎌田圭, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

    ISSN: 2758-4704

  4. Crystal growth and Scintillation Properties of Pr3+-Doped (La, Y)2Si2O7 Single Crystals

    阿部柚佳, 阿部柚佳, 堀合毅彦, 堀合毅彦, 横田有為, 横田有為, 吉野将生, 吉野将生, 村上力輝斗, 花田貴, 山路晃広, 山路晃広, 佐藤浩樹, 佐藤浩樹, 大橋雄二, 大橋雄二, 黒澤俊介, 黒澤俊介, 鎌田圭, 鎌田圭, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

    ISSN: 2758-4704

  5. Composition Optimization using Sintered Body for the Development of Dose-rate Monitoring System

    松倉大佑, 黒澤俊介, 黒澤俊介, 山路晃広, 大橋雄二, 横田有為, 鎌田圭, 鎌田圭, 佐藤浩樹, 吉野将生, 花田貴, 村上力輝斗, 堀合毅彦, 吉川彰, 吉川彰

    日本セラミックス協会秋季シンポジウム講演予稿集(Web) 36th 2023

  6. Crystal Growth and Optical Properties of Ce doped (Gd, Y, Tb)3Ga3Al2O12 Scintillators for X-ray Imaging

    大室和也, 大室和也, 吉野将生, 吉野将生, 鎌田圭, 鎌田圭, 鎌田圭, KIM Kyoung Jin, 堀合毅彦, 堀合毅彦, 村上力輝斗, 山路晃広, 山路晃広, 花田貴, 横田有為, 黒澤俊介, 黒澤俊介, 黒澤俊介, 大橋雄二, 大橋雄二, 佐藤浩樹, 佐藤浩樹, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

    ISSN: 2758-4704

  7. Investigation of Application of Near-infrared Emitting Scintillators to the Radiation Dose Rate Monitoring System for the Decommissioning

    松倉大佑, 松倉大佑, 黒澤俊介, 黒澤俊介, 黒澤俊介, 山路晃広, 山路晃広, 大橋雄二, 大橋雄二, 横田有為, 鎌田圭, 鎌田圭, 鎌田圭, 佐藤浩樹, 佐藤浩樹, 吉野将生, 吉野将生, 花田貴, 村上力輝斗, 堀合毅彦, 堀合毅彦, 吉川彰, 吉川彰, 吉川彰, 田中浩基, 高田卓志

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

    ISSN: 2758-4704

  8. Luminescence Properties of Red-emitting Iodide Neutron Scintillators

    藤原千隼, 藤原千隼, 黒澤俊介, 黒澤俊介, 黒澤俊介, 山路晃広, 山路晃広, 田中浩基, 高田卓志, 大橋雄二, 大橋雄二, 横田有為, 鎌田圭, 鎌田圭, 鎌田圭, 佐藤浩樹, 佐藤浩樹, 豊田智史, 豊田智史, 吉野将生, 吉野将生, 村上力輝斗, 堀合毅彦, 堀合毅彦, 花田貴, 吉川彰, 吉川彰

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

    ISSN: 2436-7613

  9. Development of the Long Wavelength Emission Oxide Scintillator for the Radiation Dose-Rate Monitoring System

    松倉大佑, 松倉大佑, 黒澤俊介, 黒澤俊介, 黒澤俊介, 藤原千隼, 藤原千隼, 山路晃広, 山路晃広, 大橋雄二, 大橋雄二, 横田有為, 鎌田圭, 鎌田圭, 鎌田圭, 佐藤浩樹, 佐藤浩樹, 豊田智史, 豊田智史, 吉野将生, 吉野将生, 花田貴, 村上力輝斗, 堀合毅彦, 堀合毅彦, 吉川彰, 吉川彰, 吉川彰, 田中浩基, 高田卓志

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

    ISSN: 2436-7613

  10. Development of optical-guiding crystal scintillator plate for high resolution and sensitivity radiation imaging

    矢島隆雅, 矢島隆雅, 鎌田圭, 鎌田圭, 沓澤直子, 吉野将生, 吉野将生, 堀合毅彦, 堀合毅彦, 村上力輝斗, 村上力輝斗, KIM Kyoung Jin, KIM Kyoung Jin, 山路晃広, 山路晃広, 黒澤俊介, 横田有為, 佐藤浩樹, 豊田智史, 大橋雄二, 花田貴, KOCHURIKHIN Vladimir, 山本誠一, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

    ISSN: 2758-4704

  11. Resonance characteristics analysis of double-layered resonator using α-quartz by Finite Element Method

    野口太生, 大橋雄二, 面政也, 横田有為, 村上力輝斗, 黒澤俊介, 鎌田圭, 佐藤浩樹, 豊田智史, 堀合毅彦, 山路晃広, 吉野将生, 花田貴, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

    ISSN: 2758-4704

  12. Core Heating法によるCaHfO3結晶の作製とシンチレーション特性評価

    倉嶋佑太朗, 黒澤俊介, 黒澤俊介, 村上力輝斗, 村上力輝斗, 山路晃広, 山路晃広, 鎌田圭, 鎌田圭, 鎌田圭, 吉野将生, 豊田智史, 豊田智史, 佐藤浩樹, 佐藤浩樹, 横田有為, 大橋雄二, 大橋雄二, 花田貴, 吉川彰, 吉川彰, 吉川彰

    放射線(Web) 47 (3) 2022

    ISSN: 2758-9064

  13. Scintillation Properties of Nd-Doped Y3Al5O12 Oxide-Scintillators for the Decommissioning Monitoring System in the Nuclear Plant

    松倉大佑, 松倉大佑, 黒澤俊介, 黒澤俊介, 黒澤俊介, KOCHURIKHIN Vladimir, 小玉翔平, 藤原千隼, 藤原千隼, 山路晃広, 山路晃広, 大橋雄二, 大橋雄二, 横田有為, 鎌田圭, 鎌田圭, 佐藤浩樹, 佐藤浩樹, 豊田智史, 豊田智史, 吉野将生, 吉野将生, 花田貴, 村上力輝斗, 堀合毅彦, 堀合毅彦, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

    ISSN: 2758-4704

  14. Influence of reflected waves at the bonding boundary in double-layered thickness-shear resonator using α-quartz

    野口太生, 大橋雄二, 面政也, 横田有為, 黒澤俊介, 鎌田圭, 佐藤浩樹, 豊田智史, 吉野将生, 山路晃広, 花田貴, 吉川彰, 吉川彰

    圧電材料・デバイスシンポジウム 2022 2022

  15. Step-Flow Growth Model of N-polar GaN Metalorganic Vapor Phase Epitaxy

    Takashi Hanada, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Kei Kamada, Yuji Ohashi, Hiroki Sato, Satoshi Toyoda, Yuui Yokota, Akira Yoshikawa

    日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth 48 (1) 03-1-03-12 2021/05

    Publisher: 日本結晶成長学会

    DOI: 10.19009/jjacg.48-1-03  

    ISSN: 2188-7268

  16. Development of scintillator-based active collimator camera for simultaneous imaging of PET/SPECT multi-isotopes

    吉野将生, 小瀧淳, 横田有為, 鎌田圭, 鎌田圭, 黒澤俊介, 山路晃広, 大橋雄二, 佐藤浩樹, 豊田智史, 花田貴, 吉川彰, 吉川彰, 吉川彰

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 68th 2021

  17. Tube shape-controlled crystal growth / dicing technique dedicated for scintillation materials, and its application to radiation imaging devices

    吉野将生, 鎌田圭, 鎌田圭, 庄子育宏, 小瀧淳, 横田有為, 黒澤俊介, 山路晃広, Hanada Takashi, 大橋雄二, 佐藤浩樹, 吉川彰, 吉川彰, 吉川彰

    日本結晶成長学会誌(CD-ROM) 48 (1) 2021

    ISSN: 2188-7268

  18. Consideration on operating characteristics for double layered thickness-shear resonator using α-quartz

    野口太生, 大橋雄二, 面政也, 横田有為, 黒澤俊介, 鎌田圭, 佐藤浩樹, 豊田智史, 山路晃広, 吉野将生, 花田貴, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021

  19. Growth and scintillation properties of BaCl2/NaCl/KCl eutectics for radiation imaging applications.

    瀧澤優威, 鎌田圭, 鎌田圭, KIM Kyoung Jin, 吉野将生, 山路晃広, 黒澤俊介, 黒澤俊介, 横田有為, 佐藤浩樹, 豊田智史, 大橋雄二, 花田貴, KOCHURIKHIN Vladimir. V., 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021

  20. Scintillation Properties for Cs2Hf(I, Br)6 with Red Emission

    藤原千隼, 小玉翔平, 石川志緒利, 石川志緒利, 黒澤俊介, 黒澤俊介, 山路晃広, 山路晃広, 大橋雄二, 大橋雄二, 横田有為, 鎌田圭, 鎌田圭, 鎌田圭, 佐藤浩樹, 豊田智史, 吉野将生, 花田貴, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021

  21. Development of Li2HfI6 scintillator for dual detection of neutrons and gamma rays

    藤原千隼, 黒澤俊介, 山路晃広, 大橋雄二, 横田有為, 佐藤宏樹, 豊田智史, 鎌田圭, 鎌田圭, 吉野将生, 花田貴, 吉川彰, 吉川彰

    Journal of Flux Growth 15 (2) 2021

    ISSN: 1881-5316

  22. The crystal growth and scintillation properties of CeBr3/6LiBr and LaBr3:Ce/6LiBr

    矢島隆雅, 矢島隆雅, 鎌田圭, 鎌田圭, 鎌田圭, 瀧澤優威, 瀧澤優威, KIM Kyoung Jin, 吉野将生, 山路晃広, 黒澤俊介, 横田有為, 佐藤浩樹, 豊田智史, 大橋雄二, 花田貴, KOCHURIKHIN Vladimir, 吉川彰, 吉川彰, 吉川彰

    Journal of Flux Growth 15 (2) 2021

    ISSN: 1881-5316

  23. Crystal growth using Shielded Arc Melting method

    矢島隆雅, 鎌田圭, 鎌田圭, 石川志緒利, 瀧澤優威, KIM Kyoung Jin, 吉野将生, 山路晃広, 黒澤俊介, 横田有為, 佐藤浩樹, 豊田智史, 大橋雄二, 花田貴, KOCHURIKHIN Vladimir, 吉川彰, 吉川彰, 吉川彰

    結晶成長国内会議予稿集(CD-ROM) 50th 2021

    ISSN: 0385-6275

  24. Crystal growth of La2Hf2O7 by micro-pulling-down method using a W crucible and optical properties

    須田貴裕, 横田有為, 横田有為, 堀合毅彦, 山路晃広, 吉野将生, 花田貴, 佐藤浩樹, 豊田智史, 大橋雄二, 大橋雄二, 黒澤俊介, 黒澤俊介, 鎌田圭, 鎌田圭, 鎌田圭, 吉川彰, 吉川彰, 吉川彰

    Journal of Flux Growth 15 (2) 2021

    ISSN: 1881-5316

  25. Large size growth of BaCl2/NaCl/KCl eutectic for radiation imaging

    瀧澤優威, 鎌田圭, 鎌田圭, KIM Kyoung Jin, 吉野将生, 山路晃広, 黒澤俊介, 黒澤俊介, 横田有為, 佐藤浩樹, 豊田智史, 大橋雄二, 花田貴, KOCHURIKHIN Vladimir.V., 吉川彰, 吉川彰, 吉川彰

    Journal of Flux Growth 15 (2) 2021

    ISSN: 1881-5316

  26. Growth and luminescence properties of ternary eutectics

    瀧澤優威, 鎌田圭, 鎌田圭, KIM Kyoung Jin, 吉野将生, 山路晃広, 黒澤俊介, 黒澤俊介, 横田有為, 佐藤浩樹, 豊田智史, 大橋雄二, 花田貴, KOCHURIKHIN Vladimir. V., 吉川彰, 吉川彰, 吉川彰

    結晶成長国内会議予稿集(CD-ROM) 50th 2021

    ISSN: 0385-6275

  27. Improvement of Transmittance of Cs2HfI6 Scintillator Crystals for Real-Time Radiation Measurements for Decommissioning

    藤原千隼, 石川志緒利, 石川志緒利, 小玉翔平, 黒澤俊介, 山路晃広, 大橋雄二, 黒澤俊介, 山路晃広, 大橋雄二, 横田有為, 鎌田圭, 鎌田圭, 鎌田圭, 佐藤浩樹, 豊田智史, 吉野将生, 花田貴, 吉川彰, 吉川彰, 吉川彰

    結晶成長国内会議予稿集(CD-ROM) 50th 2021

    ISSN: 0385-6275

  28. Crystal Growth of La2Hf2O7 by Micro-Pulling-Down Method considering the effect of insulation Shape

    須田貴裕, 横田有為, 堀合毅彦, 山路晃広, 吉野将生, 花田貴, 佐藤浩樹, 豊田智史, 大橋雄二, 黒澤俊介, 黒澤俊介, 鎌田圭, 鎌田圭, 鎌田圭, 吉川彰, 吉川彰, 吉川彰

    結晶成長国内会議予稿集(CD-ROM) 50th 2021

    ISSN: 0385-6275

  29. Scintillation properties for hafnium iodide crystals with red and infrared emission bands

    藤原千隼, 小玉翔平, 黒澤俊介, 山路晃広, 大橋雄二, 横田有為, 佐藤宏樹, 豊田智史, 吉野将生, 花田貴, 鎌田圭, 吉川彰

    日本セラミックス協会秋季シンポジウム講演予稿集(Web) 34th 2021

  30. Fast Scanning Method for Measuring Material Homogeneity using the Line-Focus-Beam Ultrasonic-Material-Characterization System

    大橋雄二, 横田有為, 山路晃広, 吉野将生, 黒澤俊介, 鎌田圭, 佐藤浩樹, 豊田智史, 花田貴, 吉川彰, 吉川彰

    電子情報通信学会技術研究報告(Web) 120 (174(US2020 27-42)) 2020

    ISSN: 2432-6380

  31. Challenge to growth of three-dimensional shape-controlled single crystal using micro-pulling-down method

    横田有為, 大橋雄二, 吉野将生, 山路晃広, 花田貴, 豊田智史, 佐藤浩樹, 黒澤俊介, 鎌田圭, 鎌田圭, 吉川彰, 吉川彰, 吉川彰

    結晶成長国内会議予稿集(CD-ROM) 49th 2020

    ISSN: 0385-6275

  32. Step-Flow Growth Model of N-polar GaN Metalorganic Vapor-Phase Epitaxy with Vicinal Surface or Screw Dislocations

    花田貴, 吉野将生, 山路晃広, 黒澤俊介, 鎌田圭, 大橋雄二, 佐藤浩樹, 豊田智史, 横田有為, 吉川彰

    結晶成長国内会議予稿集(CD-ROM) 49th 2020

    ISSN: 0385-6275

  33. Control of hole diameter and evaluation of tube shape-controlled scintillator crystals

    小瀧淳, 吉野将生, 横田有為, 花田貴, 山路晃広, 山路晃広, 豊田智史, 豊田智史, 佐藤浩樹, 佐藤浩樹, 大橋雄二, 大橋雄二, 黒澤俊介, 黒澤俊介, 鎌田圭, 鎌田圭, 鎌田圭, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  34. Relationship between thickness ratio and temperature characteristics of double layered thickness-shear resonator

    大和田悠介, 大橋雄二, 面政也, 横田有為, 黒澤俊介, 鎌田圭, 佐藤浩樹, 豊田智史, 山路晃広, 吉野将生, 花田貴, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  35. Growth and luminescence properties of CsI containing eutectics

    瀧澤優威, 鎌田圭, 鎌田圭, 鎌田圭, 吉野将生, 山路晃広, 黒澤俊介, 黒澤俊介, 横田有為, 佐藤浩樹, 豊田智史, 大橋雄二, 花田貴, KOCHURIKHIN Vladimir. V., 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  36. Development of novel red-emitting iodide scintillators for the Fiber-read gamma-ray monitor

    小玉翔平, 黒澤俊介, 黒澤俊介, 森下祐樹, 宇佐美博士, 鳥居建男, 林真照, 東哲史, 笹野理, 牧田泰介, 田中浩基, 花田貴, 山路晃広, 山路晃広, 吉野将生, 豊田智史, 豊田智史, 佐藤浩樹, 佐藤浩樹, 大橋雄二, 大橋雄二, 鎌田圭, 鎌田圭, 鎌田圭, 横田有為, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  37. Preparation and characterization of Iridium films by thermal CVD method on Molybdenum crucibles

    佐藤浩樹, 佐藤浩樹, 佐藤浩樹, 佐藤浩樹, 後藤孝, 奥野敦, 奥野敦, 横田有為, 鎌田圭, 鎌田圭, 黒澤俊介, 黒澤俊介, 大橋雄二, 大橋雄二, 豊田智史, 豊田智史, 吉野将生, 山路晃広, 山路晃広, 花田貴, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  38. Crystal growth and luminescent properties of phenanthrene

    山路晃広, 黒澤俊介, 花田貴, 吉野将生, 豊田智史, 佐藤浩樹, 大橋雄二, 横田有為, 鎌田圭, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  39. Simulation study on scintillator-based active collimator camera for simultaneous imaging of PET/SPECT multi-isotopes

    吉野将生, 小瀧淳, 横田有為, 鎌田圭, 鎌田圭, 黒澤俊介, 山路晃広, 大橋雄二, 佐藤浩樹, 豊田智史, 花田貴, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  40. Optical and scintillation properties of transparent CaHfO3 crystals grown by Core Heating method

    倉嶋佑太朗, 黒澤俊介, 黒澤俊介, 村上力輝斗, 村上力輝斗, 山路晃広, 山路晃広, 鎌田圭, 鎌田圭, 鎌田圭, 吉野将生, 豊田智史, 豊田智史, 佐藤浩樹, 佐藤浩樹, 横田有為, 大橋雄二, 大橋雄二, 花田貴, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  41. Al Concentration Dependence of Crystal Structure on Ca3B(Ga,Al)3Si2O14 (B = Nb, Ta) Piezoelectric Single Crystals

    横田有為, 大橋雄二, 吉野将生, 山路晃広, 花田貴, 豊田智史, 佐藤浩樹, 黒澤俊介, 鎌田圭, 鎌田圭, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  42. Growth and scintillation properties of CaO and SrO crystals by Core Heating method

    鎌田圭, 鎌田圭, 石川志緒利, 村上力輝斗, 村上力輝斗, 山路晃広, 吉野将生, 黒澤俊介, 豊田智史, 佐藤浩樹, 横田有為, 大橋雄二, 花田貴, 吉川彰, 吉川彰, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  43. Simulation verification of the inverse analysis by using 4D-XPS method to make reactions in the buried multi-layer stack-film interfaces visible

    豊田智史, 山本知樹, 吉村真史, 住田弘祐, 三根生晋, 町田雅武, 吉越章隆, 鈴木哲, 横山和司, 大橋雄二, 黒澤俊介, 鎌田圭, 佐藤浩樹, 山路晃広, 吉野将生, 花田貴, 横田有為, 吉川彰

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

  44. GaMnNAsのMBE成長と磁気特性に対するアニール効果

    小林元気, 小林元気, 森貴洋, KIM Jung‐Jin, 竹田幸治, 吉川英樹, 小林啓介, 藤井克司, 加藤崇, 花田貴, 牧野久雄, 八百隆文

    応用物理学関係連合講演会講演予稿集 54th (1) 516 2007/03/27

  45. p‐MBE成長時のGaNAs(001)表面

    森貴洋, 花田貴, 小林元気, 小林元気, 小林亮, 中山隆史, 八百隆文

    応用物理学関係連合講演会講演予稿集 53rd (1) 323 2006/03/22

  46. 3.5. II-VI族化合物半導体

    八百 隆文, 花田 貴

    電子材料ハンドブック 213-225 2006

    Publisher: 朝倉書店

  47. GaInNAsの局所構造評価:In濃度に対する変化

    森貴洋, 花田貴, 八百隆文, 宇留賀朋哉

    応用物理学会学術講演会講演予稿集 66th (1) 236 2005/09/07

  48. 秩序化III‐V族混晶半導体の光学特性

    花田貴, 森貴洋, 森村俊晴, 牧野久雄, CHO Meoung‐Whan, 八百隆文

    東北大学金属材料研究所金属ガラス総合研究センター共同利用研究報告書 2004 130-131 2005/06

  49. GaNAs薄膜中の窒素原子位置

    森貴洋, 森村俊晴, 花田貴, 永田晋二, 八百隆文

    応用物理学会学術講演会講演予稿集 65th (1) 249 2004/09/01

  50. 反射率差分光法によるGaNAs(001)成長表面のその場観察

    森貴洋, 森村俊晴, 花田貴, 八百隆文

    応用物理学関係連合講演会講演予稿集 51st (1) 349 2004/03/28

  51. ZnOエピタキシーの最近の進展

    花田貴, 高恒柱, 八百隆文

    応用物理 72 (6) 705-710 2003/06

    Publisher: 応用物理学会

    ISSN: 0369-8009

  52. Mechanism of size uniformity of self-assembled InAs/GaAs (001) dots

    Hanada T., Totsuka H., Yao T.

    Meeting abstracts of the Physical Society of Japan 58 (1) 846-846 2003/03/06

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  53. Atomic structure of the GaAs(001)-(2x4) surface under As flux (vol B 65, art no 165315, 2002)

    A Ohtake, M Ozeki, T Yasuda, T Hanada

    PHYSICAL REVIEW B 66 (20) 2002/11

    DOI: 10.1103/PhysRevB.66.209902  

    ISSN: 1098-0121

  54. SiO2/Si(001)のRDスペクトルにおける光弾性効果の寄与

    森貴洋, 安田哲二, 熊谷直人, 花田貴, 八百隆文

    応用物理学関係連合講演会講演予稿集 49th (2) 785 2002/03/27

  55. Study of the growth kinetics of CdTe quantum-dots on ZnTe substrates

    K. Godo, J. H. Chang, H. Makino, T. Hanada, T. Takai, H. Goto, T. Yao, T. Sasao, T. Goto

    Proc. 26th Int. Conf. on the Physics of Semiconductors 1-8 2002

  56. ZnTeの反射率差分光法(RDS)による線形電気光学係数の測定

    森貴洋, 熊谷直人, 安田哲二, CHANG J. H, 花田貴, 八百隆文

    応用物理学関係連合講演会講演予稿集 48th (3) 1408 2001/03/28

  57. RDSを用いたGaAsの吸収域における線形電気光学係数の測定

    熊谷直人, 安田哲二, 森貴洋, 花田貴, 八百隆文

    応用物理学関係連合講演会講演予稿集 48th (3) 1409 2001/03/28

  58. As照射下におけるGaAs(001)-(2x4)表面原子配列

    大竹晃浩, 安田哲二, 花田貴, 尾関雅志, 塚本史郎, 小口信行

    応用物理学会学術講演会講演予稿集 62nd (1) 2001

  59. ZnO epilayers on GaN templates: Polarity control and valence-band offset

    S. K. Hong, T. Hanada, H. Makino, H. J. Ko, Y. F. Chen, T. Yao, A. Tanaka, H. Sasaki, S. Sato, D. Imai, K. Araki, M. Shinohara

    J. Vac. Sci. Technol. B 19 (4) 1429-1433 2001

    DOI: 10.1116/1.1374630  

    ISSN: 0734-211X

  60. 原子価不整合のあるII-VI/III-V界面の形成

    花田貴, 八百隆文

    表面科学 21 (6) 355-360 2000/06

    Publisher: 日本表面科学会

    DOI: 10.1380/jsssj.21.355  

    ISSN: 0388-5321

    More details Close

    Heterovalent ZnSe/GaAs(001) interface structure was controlled by preparing various initial surface structures of GaAs(001) and by pre-growth deposition of Zn or Se. It was found that density of stacking faults and other kind of defects in the ZnSe film strongly depended on the interface structure. In order to reduce the defect density, it was important to avoid chalcogenization of GaAs surface and segregation of excess As. A ZnSe film with lowest density of defects was obtained by Zn treatment on the GaAs(001)-(2×4) surface.

  61. InAs/GaAs系自己組織化量子ドットの形成過程の調査

    戸塚洋史, 神門賢二, HONG S K, 花田貴, 八百隆文

    応用物理学関係連合講演会講演予稿集 46th (1) 377 1999/03/28

  62. 29a-PS-39 ZnSe(001)surfaces observed during ALE growth

    Ohtake A., Hanada T., Yasuda T., Yao T.

    Meeting abstracts of the Physical Society of Japan 54 (1) 317-317 1999/03/15

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  63. Structure of the Se-adsorbed GaAs(111)A-(2√<3>×2√<3>)-R30° surface

    OHTAKE A., KOMURA T., HANADA T., MIWA S., YASUDA T., YAO T.

    Meeting abstracts of the Physical Society of Japan 53 (2) 389-389 1998/09/05

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  64. Growth of ZnSe on misoriented GaAs(110) surface by molecular beam epitaxy

    KW Koh, MW Cho, Z Zhu, T Hanada, M Isshiki, T Yao

    JOURNAL OF CRYSTAL GROWTH 184 (185) 46-50 1998/02

    ISSN: 0022-0248

  65. Atomic layer growth of SrCuO2 thin film by MBE

    Z. Liu, T. Hanada, M. Kawai, K. Kudo, H. Koinuma

    J. Surf. Sci. Soc. Jpn. 14 (5) 283-287 1993/12

    Publisher: The Surface Science Society of Japan

    DOI: 10.1380/jsssj.14.283  

    ISSN: 0388-5321

    More details Close

    Thin films of SrCuO2 with a tetragonal structure have been synthesized by molecular beam epitaxy. Two different patterns have been observed by reflection high-energy electron diffraction (RHEED) during the alternating supply of strontium and copper under the flow of NO2. Incommensurate streaks appear during the copper supply. The intensity of the incommensurate streak decreases to zero with the strontium supply. We demonstrate that an exact control of the elemental composition of Sr and Cu can be carried out using in-situ intensity monitoring of the incommensurate streak.

  66. 12p-DL-8 A new method for surface structure analysis using electron standing waves

    Yamanaka T., Hanada T., Ino S.

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting 1993 (2) 581-581 1993/09/20

    Publisher: The Physical Society of Japan (JPS)

  67. 25p-Y-5 Structural analysis of Si(111)-√<3>×√<3>-In by incident-angle-dependent RHEED-TRAXS

    Yamanaka T, Hanada T, Ino S

    1992 (2) 439-439 1992/09/14

    Publisher: The Physical Society of Japan (JPS)

  68. 28p-Y-9 Structurally controlled SrTiO_3(100) surfaces and their chemical properties

    Hikita Tokihisa, Hanada Takashi, Kawai Maki, Yoshinobu Jun, Kudo Masahiro

    1992 (2) 517-517 1992/09/14

    Publisher: The Physical Society of Japan (JPS)

  69. SURFACE-STRUCTURE OF BI/SI(001)

    T HANADA, M KAWAI, M KUDO

    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 203 352-COLL 1992/04

    ISSN: 0065-7727

  70. 28p-PS-28 Relaxation of Bi(2201) strain lattice formes by low temperaure MBE method

    Mori M., Kawai M., Ishizawa N., Hanada T., Kudo M.

    47 (3) 286-286 1992/03/12

    Publisher: The Physical Society of Japan (JPS)

  71. 29p-PS-38 Surface structure control of SrTiO_3 (100)

    Hikita Tokihisa, Hanada Takashi, Kawai Maki, Kudo Masahiro

    47 (2) 476-476 1992/03/12

    Publisher: The Physical Society of Japan (JPS)

  72. 27p-APS-91 Structure and formation of Bi_2(Sr_<1-x>Ca_x)_<n+1>Cu_nO_y thin film.

    Hanada T., Mori M., Liu Z., Kawai M., Kudo M.

    46 (3) 288-288 1991/09/12

    Publisher: The Physical Society of Japan (JPS)

  73. Crystal growth of ultra thin films of Bi-Sr-Ca-Cu-O at low temperature

    Kawai M., Watanabe S., Hanada T.

    1990 (3) 379-379 1990/10/02

    Publisher: The Physical Society of Japan (JPS)

  74. 2p-E-15 The 2xn structures of Si(001)-Bi surface

    Hanada T., Kawai M.

    1990 (2) 426-426 1990/09/12

    Publisher: The Physical Society of Japan (JPS)

  75. Study of metal adsorbed Si(111) surface by Insident-angle-dependent RHEED-TRAXS

    Yamanaka T., Hanada T., Daimon H., Ino S.

    45 (2) 403-403 1990/03/16

    Publisher: The Physical Society of Japan (JPS)

  76. 3a-T-13 Structure and oxidation of the Si (001) -Bi surface

    Hanada T., Kawai M.

    1989 (2) 383-383 1989/09/12

    Publisher: The Physical Society of Japan (JPS)

  77. 6p-T-2 Construction of RHEED-TRAXS System for Surface Structure Analysis

    Yamanaka T., Tsuno T., Hanada T., Daimon H., Ino S.

    1989 (2) 437-437 1989/09/12

    Publisher: The Physical Society of Japan (JPS)

  78. 28a-TJ-10 Phase Transitions on Si and Ge Clean Surfaces

    Hibino H., Fukutani T., Hanada T., Daimon H., Ino S.

    44 (2) 359-359 1989/03/28

    Publisher: The Physical Society of Japan (JPS)

  79. 31p-PS-111 Atomiclayer growth and oxidation process of superconducting Bi-Sr-Ca-Cu-O thin film

    Hanada T., Kawai M., Gouda T., Teratani S.

    44 (3) 300-300 1989/03/28

    Publisher: The Physical Society of Japan (JPS)

  80. 6p-B4-3 Ge(111)表面の高温での相転移

    日比野 浩樹, 福谷 克之, 花田 貴, 大門 寛, 井野 正三

    秋の分科会講演予稿集 1988 (2) 424-424 1988/09/16

    Publisher: 一般社団法人日本物理学会

  81. 6p-B4-4 Ge(111)表面上のGeの成長

    福谷 克之, 日比野 浩樹, 花田 貴, 大門 寛, 井野 正三

    秋の分科会講演予稿集 1988 (2) 424-424 1988/09/16

    Publisher: 一般社団法人日本物理学会

  82. 26a-P-6 RHEEDによるSi(111)7×7構造の解析

    花田 貴, 大門 寛, 井野 正三

    秋の分科会講演予稿集 1987 (2) 340-340 1987/09/16

    Publisher: 一般社団法人日本物理学会

  83. 30p-H-5 Si(111)-√3×√3Ga構造のRHEEDによる研究(表面・界面)

    花田 貴, 大門 寛, 井野 正三

    年会講演予稿集 42 (2) 414-414 1987/03/27

    Publisher: 一般社団法人日本物理学会

  84. 30a-H-12 Si(111)-Ge表面における2種の7×7構造(表面・界面)

    福谷 克之, 花田 貴, 松本 裕敦, 大門 寛, 井野 正三

    年会講演予稿集 42 (2) 411-411 1987/03/27

    Publisher: 一般社団法人日本物理学会

  85. 30p-D-7 Si(111)√<3>×√<3>-GaのSOR光による光電子回折

    花田 貴, 大門 寛, 永野 真一郎, 井野 正三, 菅 滋正, 村田 好正

    秋の分科会講演予稿集 1986 (2) 467-467 1986/09/12

    Publisher: 一般社団法人日本物理学会

  86. 30a-D-8 Si(111)-Ge表面の超構造と相転移の研究II

    福谷 克之, 松本 裕敦, 花田 貴, 大門 寛, 井野 正三

    秋の分科会講演予稿集 1986 (2) 461-461 1986/09/12

    Publisher: 一般社団法人日本物理学会

  87. 30p-D-8 Si(111)√<3>×√<3>-AlのSOR光による光電子回折

    大門 寛, 花田 貴, 永野 真一郎, 井野 正三, 菅 滋正, 村田 好正

    秋の分科会講演予稿集 1986 (2) 467-467 1986/09/12

    Publisher: 一般社団法人日本物理学会

  88. 1p-S-9 Si(111)-Auの光電子回折

    永野 眞一郎, 大門 寛, 井野 正三, 菅 滋正, 村田 好正, 花田 貴, 相沢 俊, 築野 孝, 福谷 克之, 松本 裕敦

    秋の分科会講演予稿集 1985 (2) 382-382 1985/09/13

    Publisher: 一般社団法人日本物理学会

  89. 1p-S-3 Si(111)√<3>×√<3>-Gaの光電子回折

    大門 寛, 永野 真一郎, 井野 正三, 菅 滋正, 村田 好正, 花田 貴, 相沢 俊, 築野 孝, 福谷 克之, 松本 裕敦

    秋の分科会講演予稿集 1985 (2) 379-379 1985/09/13

    Publisher: 一般社団法人日本物理学会

  90. 1a-S-8 Si(111)のRHEED強度測定 -- 温度依存性

    花田 貴, 井野 正三, 大門 寛

    秋の分科会講演予稿集 1985 (2) 376-376 1985/09/13

    Publisher: 一般社団法人日本物理学会

  91. 31p-A1-4 Si(111)7×7構造のRHEED強度解析II(表面・界面)

    花田 貴, 井野 正三, 大門 寛

    年会講演予稿集 40 (2) 357-357 1985/03/31

    Publisher: 一般社団法人日本物理学会

  92. 4p-E-10 Si,Geの(111)表面上の7×7,5×5,2×8構造に対する統一的模型II

    井野 正三, 大門 寛, 花田 貴

    秋の分科会講演予稿集 1984 (2) 413-413 1984/09/10

    Publisher: 一般社団法人日本物理学会

  93. 2a-RJ-12 RHEEDの励起X線分光II

    長谷川 修司, 井野 正三, 大門 寛, 花田 貴

    年会講演予稿集 39 (2) 337-337 1984/03/12

    Publisher: 一般社団法人日本物理学会

  94. 4a-RJ-4 Si(111)7×7構造のRHEED強度解析

    花田 貴, 井野 正三, 大門 寛, 山本 陽一, 長谷川 修司

    年会講演予稿集 39 (2) 353-353 1984/03/12

    Publisher: 一般社団法人日本物理学会

  95. 4a-RJ-3 Si,Geの(111)表面上の7×7,5×5,2×8構造に対する統一的模型

    井野 正三, 花田 貴, 大門 寛

    年会講演予稿集 39 (2) 352-352 1984/03/12

    Publisher: 一般社団法人日本物理学会

  96. NEW MODELS FOR THE 7X7, 5X5, 2X8 STRUCTURES ON SI(111) AND GE(111) SURFACES

    S INO, H DAIMON, T HANADA

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 53 (6) 1911-1914 1984

    DOI: 10.1143/JPSJ.53.1911  

    ISSN: 0031-9015

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Books and Other Publications 9

  1. ZnO系の最新技術と応用 《普及版》

    花田貴

    シーエムシー出版 2013/03/08

    ISBN: 9784781307107

  2. State-of-the-Art Research and Perspective of Zinc Oxide

    章, 花田貴

    シーエムシー出版 2011/01

    ISBN: 9784781303208

  3. Oxide and Nitride Semiconductors Processing, Properties, and Applications

    Chapter, T. Hanada

    Springer Berlin Heidelberg 2009/03/20

    ISBN: 9783540888468

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    ISBN 978-3-540-88846-8 (Print) 978-3-540-88847-5 (Online)

  4. 発光と受光の物理と応用

    節, 花田貴, 八百隆文

    培風館 2008/03/25

    ISBN: 9784563067700

  5. 第5版 実験化学講座24 表面・界面

    花田貴

    丸善 2007/01/30

    ISBN: 9784621073230

  6. ZnO its Most Up-to-date Technology and Application ,Perspectives

    章, 花田貴

    シーエムシー出版 2007/01

    ISBN: 9784882316619

  7. Wide Bandgap Semiconductors and Related Optoelectronic Devices

    T. Hanada, T. Yao

    Springer-Verlag GmbH 2007/01

    ISBN: 9783540472346

  8. ワイドギャップ半導体光・電子デバイス

    節, 花田貴, 八百隆文

    森北出版 2006/03/31

    ISBN: 4627773218

  9. The latest trends in development of next-generation optical materials and devices

    Chap, YAO Takafumi, HANADA Takashi

    シーエムシー出版 2003/04

    ISBN: 9784882319603

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Presentations 40

  1. Polygonal Spiral Growth Model on N-polar GaN

    Takashi Hanada, Rikito Murakami, Takahiko Horiai, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Kei Kamada, Yuji Ohashi, Hiroki Sato, Yuui Yokota, Akira Yoshikawa

    The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023/11/16

  2. Surface Structure of Cleaved ScAlMgO4(0001) Substrate for III-nitrides Analyzed by X-ray Crystal Truncation Rod Scattering International-presentation

    T. Hanada, H. Tajiri, O. Sakata, T. Fukuda, T. Matsuoka

    The 12th International Conference on Nitride Semiconductors (ICNS-12) 2017/07/24

  3. Roll of Hydrogen during Metalorganic Vapor Phase Epitaxy of N-polar III-nitrides International-presentation

    T. Hanada, T. Matsuoka

    The 12th International Conference on Nitride Semiconductors (ICNS-12) 2017/07/24

  4. X線CTR散乱によるScAlMgO4(0001)劈開面の構造解析

    花田 貴, 田尻寛男, 坂田修身, 福田 承生, 松岡 隆志

    第64回応用物理学会春季学術講演会 2017/03/14

  5. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces International-presentation

    T. Hanada, T. Iwabuchi, S. Kuboya, H. Tajiri, K. Inaba, T. Tanikawa, T. Fukuda, T. Matsuoka

    The 2016 European Materials Research Society Fall Meeting 2016/09/19

  6. c面Al2O3基板上にMOVPE成長したGaNの異常分散X線回折による極性判

    花田 貴, 稲葉 克彦, 正直 花奈子, 崔 正焄, 片山 竜二, 谷川 智之, 窪谷 茂幸, 松岡 隆志

    第61回応用物理学会春季学術講演会 2014/03/17

  7. c面ScAlMgO4基板上にMOVPE成長したGaNの異常分散X線回折による極性判定

    花田 貴, 岩渕 拓也, 窪谷 茂幸, 谷川 智之, 片山 竜二, 湊 明朗, 福田 承生, 稲葉 克彦, 松岡 隆志

    第61回応用物理学会春季学術講演会 2014/03/17

  8. In situ X-ray Diffraction during Reactive Deposition Epitaxy of FeSi2 on Si(001) International-presentation

    T. Hanada, H. Tajiri, O. Sakata, T. Matsuoka

    2013 JSAP-MRS Joint Symposia 2013/09/16

  9. In-plane polarity determination of m-GaN using anomalous-dispersion X-ray diffraction International-presentation

    T. Hanada, T. Shimada, H. Tajiri, O. Sakata, Y. Liu, T. Matsuoka

    10th International Conference on Nitride Semiconductors (ICNS-10) 2013/08/25

  10. X線異常分散を用いたm面GaNの面内極性判定

    花田貴, 島田貴章, 田尻寛男, 坂田修身, 劉 玉懐, 松岡隆志

    第60回応用物理学会春季学術講演会 2013/03/27

  11. Anisotropic distribution of indium in m-plane InGaN film observed by micro-beam X-ray diffraction International-presentation

    T. Hanada, K. Shojiki, J. H. Choi, T. Shimada, Y. Imai, S. Kimura, R. Katayama, T. Matsuoka

    Material Science Week 2012 (MSW2012) 2012/11/25

  12. Observation of local misfit-dislocation density of partly relaxed InGaN film grown on m-GaN using microbeam X-ray diffraction International-presentation

    T. Hanada, K. Shojiki, T. Shimada, J.-H. Choi, Y. Imai, S. Kimura, O. Sakata, Y. Liu, R. Katayama, T. Matsuoka

    International Workshop on Nitride Semiconductors 2012 (IWN2012) 2012/10/15

  13. マイクロビームX線回折によるm面InGaN/GaNのミスフィット転位密度分布の観察

    花田貴, 正直花奈子, 島田貴章, 崔 正焄, 今井康彦, 木村 滋, 坂田修身, 劉 玉懐, 片山竜二, 松岡隆志

    第73回応用物理学会学術講演会 2012/09/11

  14. In situ X-ray diffraction during beta-FeSi2 formation on Si(001) International-presentation

    T. Hanada, H. Tajiri, O. Sakata, T. Matsuoka

    The 6th International Conference on the Science and Technology for Advanced Ceramics 2012/06/26

  15. Temperature-Dependent Static Correlation Functions of Vibrational Atomic Displacements for InN Film Measured by X-ray Diffraction International-presentation

    T. Hanada, Y. Liu, Y. Zhang, H. Tajiri, O. Sakata, T. Kimura, K. Prasertsuk, R. Katayama, T. Matsuoka

    9th International Conference on Nitride Semiconductors (ICNS-9) 2011/07/10

  16. Reactive Deposition Epitaxy of β-FeSi2 Islands on Si(001) Observed by in situ X-Ray Diffraction International-presentation

    T. Hanada, H. Tajiri, O. Sakata, T. Matsuoka

    The Seventh International Conference on Low Dimensional Structures and Devices (LDSD2011) 2011/05/22

  17. Strain relaxation mechanism of InGaN thin film grown on m-GaN International-presentation

    T. Hanada, T. Shimada, S. Y. Ji, K. Hobo, Y. H. Liu, T. Matsuoka

    The 37th International Symposium on Compound Semiconductors (ISCS2010) 2010/05/31

  18. m面GaN基板上でのInGaN薄膜の歪緩和

    花田貴, 島田貴章, 紀世陽, 保浦健二, 劉玉懐, 松岡隆志

    第57回応用物理学関係連合講演会 2010/03/17

  19. β-FeSi2/Si(001)熱反応堆積成長のその場X線回折:α-FeSi2の成長と消滅

    花田貴, 田尻寛男, 坂田修身, 松岡隆志

    第70回応用物理学会学術講演会 2009/09/08

  20. β-FeSi2/Si(001)熱反応堆積成長のその場X線回折

    花田貴, 田尻寛男, 坂田修身, 松岡隆志

    第56回応用物理学関係連合講演会 2009/03/30

  21. In-situ X-ray diffraction during molecular-beam epitaxy of Ge islands on Si(001) International-presentation

    T. Hanada, O. Sakata, H. Tajiri, T. Yao

    Material research Society fall meeting 2008 2008/12/01

  22. 全反射X線回折によるGe/Si(001)ドットの等歪域の高さ測定

    花田貴, 田尻寛男, 坂田修身, 隅谷和嗣, 嶺岸 耕, Ryan Buckmaster, 八百隆文

    第55回応用物理学関係連合講演会 2008/03/27

  23. In-Situ X-Ray Diffraction of Self-Assembled Ge/Si(001) Dots

    T. Hanada, H. Tajiri, O. Sakata, K. Sumitani, T. Minegishi, R. Buckmaster, T. Yao

    第18回日本MRS学術シンポジウム 2007/12/07

  24. Strain and composition of self-assembled Ge/Si(001) dots observed by in-situ X-ray diffraction International-presentation

    T. Hanada, K. Sumitani, O. Sakata, R. Buckmaster, T. Yao

    The Sixth International Conference on Low Dimensional Structures and Devices (LDSD2007) 2007/04/15

  25. 全反射X線回折によるGe/Si(001)ドットの組成と歪の観測

    花田貴, 隅谷和嗣, 坂田修身, Ryan Buckmaster, 八百隆文

    第54回応用物理学関係連合講演会 2007/03/27

  26. LOCAL ATOMIC STRUCTURE AROUND Si IN Pd78Si16Cu6 BULK METALLIC GLASS STUDIED BY SOFT X-RAY ABSORPTION FINE STRUCTURE International-presentation

    T. Hanada, H. Kato, M. Hasegawa, S. Yagi, S. Qiao, T. Yao, A. Inoue

    The Fifth International Conference on Bulk Metallic Glasses (BMG V) 2006/10/01

  27. Si incorporation into self-assembled Ge/Si(001) dots observed by X-ray diffraction International-presentation

    T. Hanada, K. Sumitani, O. Sakata, R. Buckmaster, T. Yao

    The 14th International Conference on Molecular Beam Epitaxy (MBE2006) 2006/09/03

  28. In situ X-ray diffraction during molecular-beam epitaxy of self-assembled Ge/Si(001) dots International-presentation

    T. Hanada, K. Sumitani, O. Sakata, R. Buckmaster, T. Yao

    4th International Conference on Quantum Dots 2006/05/01

  29. その場X線回折によるGe/Si(001)ドット形成過程の観測

    花田貴, 隅谷和嗣, 坂田修身, Ryan Buckmaster, 八百隆文

    第53回応用物理学関係連合講演会 2006/03/22

  30. Slowdown in development of self-assembled InAs/GaAs(001) dots near the critical thickness International-presentation

    T. Hanada, H. Totsuka, S. K. Hong, K. Godo, K. Miyajima, T. Goto, T. Yao

    23rd North American Conference on Molecular Beam Epitaxy (NAMBE) 2005/09/11

  31. ZrAlNiバルク金属ガラスのXAFSによる局所構造評価

    花田 貴, 大柳 宏之, 張 涛, 八百 隆文, 井上 明久

    第52回応用物理学関係連合講演会 2005/03/29

  32. Formation and evolution of strain-induced self-assembled dots International-presentation

    T. Hanada, T. Yao

    The Fifth International Conference on Low Dimensional Structures and Devices (LDSD2004) 2004/12/12

  33. (CH3C6H4CH2NH3)2PbBr4の構造変調と励起子線の分裂

    花田 貴, 後藤 武生, 八百 隆文

    第65回応用物理学会学術講演会 2004/09/01

  34. InAs/GaAs(001)自己形成ドットのサイズ均一化の機構

    花田貴, 戸塚洋史, 八百隆文

    日本物理学会第58回年次大会 2003/03

  35. InAs/GaAs(001)量子ドットの歪緩和

    花田貴, 戸塚洋史, 八百隆文

    春季第47回応用物理学関係連合講演会 2001/03

  36. Strain relaxation of self-assembled InAs/GaAs(001) quantum dots observed by reflection high-energy electron diffraction International-presentation

    T. Hanada, H. Totsuka, T. Yao

    The 2000 International symposium on formation, physics and device application of quantum dot structures 2000/09/10

  37. 反射率差分光によるZn1-xCdxSe/GaAs(110)の歪緩和のその測定

    花田貴, 安田哲二, 大竹晃浩, 新井健太, 八百隆文

    春季第45回応用物理学関係連合講演会 1999/03

  38. Strain-Induced Optical Anisotropy of ZnSSe and ZnCdSe Layers Grown on GaAs(110) International-presentation

    T. Hanada, T. Yasuda, A. Ohtake, S. Miwa, K. Arai, T. Yao

    International Workshop on Physics and Applications of Semiconductor Quantum Structures 1998/10/18

  39. Characterization and Control of ZnSe/GaAs Heterovalent Interfaces in Molecular-beam Epitaxy International-presentation

    T. Hanada, T. Yasuda, A. Ohtake, S. Miwa, T. Yao

    Engineering Foundation Conferences: Lattice-Mismatched and Heterovalent Thin Film Epitaxy 1998/09/13

  40. 反射率差分光(RDS)による(110)面でのZnSe/GaAsヘテロエピタキシャル成長層の歪みの測定

    花田貴, 安田哲二, 大竹晃浩, Kurt Hingerl, 三輪司郎, 木村康三, 新井健太, 金成国, 八百隆文

    春季第44回応用物理学関係連合講演会 1998/03

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Research Projects 20

  1. 酸化ガリウム低指数面の清浄・吸着表面の原子構造と電気特性

    花田 貴

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(C)

    Institution: 東北大学

    2022/04/01 - 2026/03/31

  2. Investigation for the advancement of the general-purpose surface-structural-analysis programme, 2DMAT II

    2023/04 - 2024/03

  3. Polarity selection mechanism of III-nitride semiconductor epitaxial films

    Hanada Takashi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: Tohoku University

    2018/04/01 - 2021/03/31

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    The polarity of GaN crystal has been identified by X-ray diffraction using X-ray with an energy slightly higher than the absorption edge at which the most inner-shell electrons of Ga are excited. Next, by using the crystal-truncation-rod X-ray scattering measurements, the surface atomic structure of the cleavage surface of ScAlMgO4, which can be a lattice matching growth substrate of GaN, was analyzed. It was found that there is oxygen deficiency on the ScAlMgO4 cleavage surface under a reducing atmosphere. The Ga polarity selection mechanism on this substrate was proposed based on this result. Lastly, a growth model of N-polar group-III nitrides was proposed based on thermodynamics and statistical physics. The measured growth rates of an NTT group were reproduced by this model using realistic parameters, which depend on the experimental growth temperature and the flow rates of the source and carrier gases.

  4. Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron Gas

    Matsuoka Takashi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2016/04/01 - 2019/03/31

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    In nitride semiconductors famous for blue LEDs, the author proposed in 2006 that the nitrogen-polar growth was effective for devices. The purpose of this research is to reduce both concentrations of carbon and oxygen, which are said to be highly incorporated during the epitaxial growth. Both concentrations of carbon and oxygen have been reduced by increasing the concentration of hydrogen in the carrier gas and the source supply ration of ammonia to Ga source, respectively. GaN/GaAlN/GaN inverted HEMT structure with a flat surface can be successfully grown by introducing a sapphire substrate with off angle of 0.8 deg. from c-plane. The characteristics of its two-dimensional electron gas was almost the same as a Ga-polar HEMT. This HEMT showed triode characteristics and the pinch-off operation. These results reveal that the growth technique developed here is effective for the fabrication of inverted HEMTs.

  5. Development of red-color emission based on nitride semiconductor for white lighing

    MATSUOKA Takashi, HANADA Takashi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: Tohoku University

    2012/04/01 - 2015/03/31

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    In this study, the realization of III-nitrides-based light-emitting diodes (LEDs) with the whole visible emission wavelength was demonstrated. N-polar crystal plane was adopted for the crystal growth for promoting indium incorporation into an InGaN layer, in order to achieve the long-wavelength emission. In the growth of N-polar InGaN/GaN multiple quantum wells (MQWs), the metastable zincblende (ZB) structure was unintentionally incorporated. Several growth conditions such as growth temperature and V/III source ratio were effective to suppress the inclusion of the ZB structure. By optimizing the growth conditions, the InGaN/GaN MQWs LED structures were grown. Clear emission was clearly observed under the operation of the current injection. As growth temperature for MQWs growth decreased, the emission color was successfully controlled from blue to red. These results will expand the high-efficient lighting based on LEDs.

  6. Observation and control of heteroepitaxy on Si substrate by in situ X-ray diffraction

    HANADA Takashi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: Tohoku University

    2009 - 2011

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    Initial stages of reactive deposition epitaxy of FeSi2 on Si(001)were observed by in situ X-ray diffraction. At 450℃, nitially nano-crystallites of α-FeSi2 high-temperature phase are formed. With increasing thickness of the deposited Fe, the α-FeSi2 crystallites gradually disappear and β-FeSi2, which is the stable phase at the growth temperature, supersedes them completely. The α-axis of the β-FeSi2 film aligns to the Si[001] axis during annealing up to 900℃.

  7. 大面積・超高輝度紫外LEDへの挑戦

    河 俊碩, 花田 貴

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(C)

    Institution: 東北大学

    2008 - 2010

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    平成20年度は紫外LED製作のため、サファイアを窒化することで得られるAINを形成することと、その上に形成する三角錐ナノ結晶構造、CrN基盤の形成過程に関するGaNテンプレート製作技術を開発した。具体的には(1)窒化条件の最適化、(2)多重バッファー層(AlNとCrN)とその上に成膜するGaNテンプレートの結晶性評価、(3)サファイア基板/AIN/CrNナノ結晶の界面における結晶性評価、転位及び欠陥分析である。 1. 窒化条件の最適化 スパッタリング法によりc面サファイア基板上にGr膜の成膜を行い、高温炉内でNH3による窒化を実施することでCrNの形成とサファイアを窒化することによるAlNの形成を行い多重バッファー層を形成する。すなわち、サファイア基板にCr薄膜を成膜、その後炉内(1,080℃ NH3)で窒化プロセスを行うことで単結晶CrNの三角錐ナノ結晶構造を形成した。この際、Cr薄膜の厚さと窒化時間によるCrNナノ結晶の表面モフォロジーとCrNの結晶性の向上に関する研究を実施した。 2. 多重バッファー層(AlNとCrN)とその上に成膜するGaNテンブレートの結晶性評価 さまざまな窒化条件によってCrNバッファー層上にGaNテンプレート層を成長して、これらGaNの結晶性を分析した。この結果、CrNの結晶性が良いほどGaNの結晶性が向上するのではなく、三角錐ナノ結晶構造の分布及び大きさによってGaNの結晶性が変わることが確認できた。 3. サファイア基板/AlN/CrNナノ結晶の界面における結晶性評価、転位及び欠陥分析 最適のGaNを成長した後XRD、PL法を利用して結晶性及び不純物の評価を行った。またSEM、AFMによる表面観察及びTEMによる欠陥密度を評価した。その結果、今までの研究結果より少ない刃状転位密度を持っている良質のGaN結晶成長が出来ているということを確認した。

  8. Growth of GaN thin film and fabrication of vertical light emitting diode using CrN nano-crystalline buffer layer

    HANADA Takashi, HANADA Takashi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: Tohoku University

    2007 - 2008

  9. ヘテロ界面制御によるZnO基板上への高品質GaNの低温成長

    任 寅鎬, 花田 貴, 八百 隆文

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(C)

    Institution: 東北大学

    2007 - 2008

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    本研究の目的は、(a)ZnO基板上の窒化物半導体成長のための新しいバッファー層技術を開発しGaN/ZnO界面反応と相互拡散の抑制を可能にすること、(b)サーフアクタントMBEによって高品質GaN膜の成長技術を開発すること、(c)ZnO基板上に、800℃以下の基板温度での高品質GaN膜(X線ロッキングカーブ半値幅((0002)ω-scanの半値幅で300 arcsec以下)の成長技術を開発することである。その中で、ZnO基板とGaN薄膜のヘテロ界面反応の抑制にふさわしいバッファー層として、ZnOとGaNより小さな格子定数、高い凝集エネルギーを持つために高い熱的安定性を有するAIN層をin-situ観察が可能な窒素プラズマ援用MBEを利用して成長させ、成長条件を最適化することを今年の研究目標とした。A1フラックス、N_2流量率、RFパワー及び基板温度を変化させながらAINバッファー層を成長し、その成長過程を反射高速電子線回折(RHEED)でその場観察し、成長したバッファー層の表面モフォロジーを原子間力顕微鏡(AFM)で評価し、結晶性と結晶構造を高分解能X線回折(HR-XRD)を利用して決定し、最適な成長条件を探索した。さらにZnO基板とバッファー層とのヘテロ界面反応の程度と結晶性の関係を分析するために二次イオン質量分析(SIMS)、X線光電子分光(XPS)などで評価を行った。その結果、ZnO基板上のGaN成長において、最適成長条件で成長させたAIN層は、相互拡散による結晶性低下を抑止するためのバッファー層として非常に有効であることを見いだした。

  10. 周期分極反転した酸化亜鉛による励起子共鳴非線形波長変換

    花田 貴, CHO Meoung-Whan

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 萌芽研究

    Institution: 東北大学

    2006 - 2007

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    酸素プラズマ援用分子線エピタキシ法を用いて周期分極反転(PPI)酸化亜鉛(ZnO)薄膜の作製を行い、紫外からテラヘルツ領域の疑似位相整合(QPM)波長変換素子への応用の可能性を確認した。サファイア(0001)基板上に直接成長したZn0は0極性の(000-1)面となるが、厚さ3nm以上の岩塩構造MgO(111)バッファ層を挟んで成長したZn0はZn極性の(0001)面となる。これを利用して、サファイア上にMgO(111)バッファ層を成長したあと、フォトリソグラフィーを用いて周期的にMgOバッファ層をエッチングし、MgOバッファ層の有無によるストライプ状の周期構造を持つ基板を作製した後、ZnO薄膜を成長することでZnOの1次元PPI構造を得ることが出来た。これまでに紫外からテラヘルツ領域のQPMに対応できる分極反転周期580nmから60μmにわたってPPI構造を作製することに成功している。これらの分極ドメイン構造は2インチc面サファイア基板上に均質に作製された。チタンサファイアレーザー(波長790nm)を基本波とした第二高調波発生(SHG)実験を行った。試料に対して斜めに基本波を入射させ、光の感じる実効的な極性反転周期を変化させた結果、QPM条件の計算値と良く一致する極性反転周期でSHGの増強が確認された。さらに、ZnOの極性反転を引き起こすバッファ層の物質探索を行い、サファイア(0001)基板上の岩塩構造CrN(111)バッファ層上ではZn極性ZnOが成長し、CrNバッファ層を酸化させ得られたコランダム構造Cr203(0001)層上では0極性ZnOが成長することを見いだした。これを利用して、1次元PPI構造を作製したほか、レーザー干渉リソグラフィーを利用して2次元PPI構造も作製できた。この技術により2次元非線形フォトニック結晶の作製が可能になった。

  11. The development of AlGaN template using CrN buffer layer

    MEOUNG-WHAN Cho, TAKAHASHI Hanada

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: Tohoku University

    2005 - 2006

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    In this study, we suggested CrN as a new buffer layer for GaN and A1GaN. Cubic structured CrN (111) film has smaller lattice mismatch with sapphire substrate (6.6 %) than that of GaN film. Moreover, CrN film has intermediate thermal expansion coefficient (6x10^<-6> /K) between sapphire substrate (6.66x10^<-6> /K), and GaN film (5.59x10^<-6> /K).Also, CrN, nitride material, which has nearly same physical properties with GaN an A1GaN is very stable in high temperature. In the first attempt, the two-step growth with the combination of MBE (Molecula Beam epitaxy) and HVPE (Hydride Vapor Phase epitaxy) was used and the GaN was grown on CrN buffer layer. We could obtain the high quality GaN template substrate without cracks and bending. To evaluate crystallinity and surface morphology, we used four kinds of samples, MBE-grown CrN, MBE-grown GaN/CrN, low temperature GaN and metal organic chemical vapor deposition (MOCVD)-grown GaN template. GaN were grown on these samples by HVPE method. Thick GaN films are grown on various templates on c-sapphire substrates, which include molecular beam epitaxy (MBE)-grown low temperature (LT) GaN, MBE-grown LT CrN, high temperature (HT) GaN/CrN buffer layer and metal organic chemical vapour deposition (MOCVD)-grown GaN, using hydride vapour phase epitaxy (HVPE). The HVPE-grown thick GaN on GaN/CrN buffer have no cracks at 401.tm film thickness and FWHM of (0002) wscan is 497 arcsec. These results indicate the feasibility of a CrN buffer applied to free standing (FS) GaN substrates. The Cr metal buffer layers were deposited on c-plane sapphire substrate as another method of CrN formation by sputtering. Nitridation of Cr metal layer, growth of GaN buffer layer and fmally high temperature GaN main growth was successively accomplished in HVPE reactor. High quality GaN epitaxial films were successfully grown on c-sapphire substrate with Cr metal buffer layer by HVPE. The GaN film grown on Cr metal buffer under optimized growth conditions showed mirror like surfaces, good crystalline qualities, and fine optical properties as compare with HVPE GaN grown on MOCVD GaN template.

  12. Surfactant MBE of ZnO and its applications to the growh of p-type doping

    YAO Takafumi, MEOUNG-WHAN Cho, HANADA Takashi, INHO Im

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2005 - 2006

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    We have succeeded in developing surfactant MBE of ZnO layers doped with N. The purposes of the research include: (1) development of ZnO layers at low temperatures and (2) development of high concentration of doping of nitrogen. The growth temperature for high-quality undoped ZnO layers on ZnO homoepitaxy substrates is lowered down to 400 ーC, which should be compared with the conventional growth temperature of 700゜C. XRD studies show the FWHM values for (0002) and (10-10) to be 30 arcsec and 40 arcsec, respectively. It should be stressed that these values are quite narrow and indicate high quality ZnO layers. We have tried nitrogen doping under hydrogen exposure at low temperatures in addition to nitrogen doping under conventional MBE. We have found that nitrogen doping onto Zn-polar ZnO layers are more efficient compared with 0-polar ZnO layers by almost one-order of magnitude. We have also found that as the growth temperature is lowered, the efficiency for nitrogen doping is greatly enhanced. At the growth temperature of 350 ℃, the nitrogen concentration increases up to 10^<20>cm^<-3>. Detailed photoluminescence studies suggest the formation of acceptor level of 180 meV. However, the nitrogen-doped ZnO shows n-type conductivity. We speculate that this is correlated with the formation N-H bonding, which should passivate N atoms. We tried annealing to remove hydrogen from the samples. Some of the samples show p-type conductivity, but show poor reproducibility presumably due to instability of the surface.

  13. 金属ガラス合金の軽元素周辺の局所構造と結合状態

    花田 貴

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 特定領域研究

    Institution: 東北大学

    2004 - 2005

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    金属ガラスでは主構成元素の原子半径が12%以上異なっていることが知られている。小さな原子は骨格となる大きな原子のランダム配列の間隙を埋めることによって、充填率と結合強度を上げる繋ぎの役割を果たすと考えられる。従って、高いガラス形成能の起源を探るうえで軽元素の役割を理解することは重要である。X線吸収微細構造(XAFS)測定で軽元素の吸収端を測定すれば軽元素周辺の局所構造が観測できるが、軽元素の吸収端は大気でも短距離で吸収される軟X線領域になるため、金属ガラスについては軽元素のXAFS測定がこれまで行われていなかった。そこで、He雰囲気でPd78Cu6Si16金属ガラスの軽元素SiのK吸収端XAFS測定を広島大HiSORのBL3で行った。計算と比較した結果、Si周辺の局所構造について第一近似としてはPd9Si2結晶と類似していることが分かった。Si周辺のPd配位数は8から10程度で、Si-Pd距離はPd9Si2結晶の場合より0.1Åほど小さい。このことからガラス状態では静的にランダムに揺らいだ配置をとるPdによってSiが圧迫されて押しつぶされていると見られる。アルゴンに酸素を含む雰囲でアニールされたPd78Cu6Si16では表面3μm程度の深さまでSiは酸化されており、Si周辺は4配位の酸素で囲まれている。軟X線領域にあるPdのL3吸収端XAFS測定によると、Pdは酸化されておらずPd周辺の局所構造はもともとPd同士の結合が主であるため、Siが酸化されても大きな変化は見られなかった。さらに、Cu周辺のK吸収端XAFS測定を高エネ研PFのBL9Aで行った結果、Cuも酸化の影響は受けず、組成から予想される通りCuの周辺構造はPdが主に配位しているモデルで合う。このことから、Siだけが選択的に酸化され金属ガラス表面にシリカガラスが析出していると考えられる。

  14. 有機半導体の分子線エピタキシとエレクトロニクス応用

    八百 隆文, 花田 貴, 張 志豪, 岡田 修司, 牧野 久雄

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 萌芽研究

    Institution: 東北大学

    2002 - 2002

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    当初はペンタセン、アントラセン等の芳香族分子結晶の高純度化と単結晶育成による機能デバイス開拓を目的としていた。そのため、原料精製装置と単結晶育成装置を試作し、アントラセン単結晶の精製と育成を行った。光学評価からは、不純物の少ない単結晶が育成されていることを確認した。しかし、電子移動度はこの物質系の標準的な値の0.1cm2/Vsレベルであった。この間、ベル研のショーンの研究グループのデータ捏造事件が明らかになり、また、彼らのグループの報告を除いた状況での文献検討を行なったところ、アントラセン、ペンタセン単結晶による機能デバイスの可能性が得られないことがわかった。このため、新たな機能デバイスとして、有機ゲートFETの可能性を探求することとした。この狙いは(1)半導体プロセスの簡略化、(2)半導体デバイスと有機デバイスのカップリング、(3)フレキシブルエレクトロニクスへの展開、であった。試作した有機膜ゲートMISFET作成するための予備実験として、まず、Au/アントラセン/GaAs構造をリフトオフプロセスを利用して作製し、電流-電圧特性、容量-電圧特性を測定し、アントラセン膜がFETゲート膜として使用できるかどうかのチェックをした。電流電圧特性からバリヤー障壁が0.6eV、ダイオードのn値も1.8と見積もられた。この結果は容量-電圧特性は結果とほぼ一致した。これらの原因として、Auのアントラセン中への拡散による電極特性の劣化、GaAs表面での界面準位形成などの原因が考えられる。そこで、GaAs表面をNH4Sによる硫化処理を施し、GaAs表面準位をGa-S結合で終端して表面準位密度を減少させた上でアントラセン膜を蒸着してMISダイオードを試作して特性評価を行なった。その結果、バリヤー障壁は0.7eV、ダイオードn値は1.6と見積もられ、若干の特性改善がなされた。以上の結果より、有機膜ゲートMIS構造はゲート電極、ゲート有機分子膜を適切に選ぶことで、充分動作可能であると考えられ、今後更なる研究の推進が必要である。

  15. Construction of wide gap semiconductor nano-Quantum Dots

    YAO Takafumi, KOO Bon-heun, MAKINO Hisao, HANADA Takashi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A).

    Institution: Tohoku University

    1998 - 2000

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    The ultimate goal of this research is to establish the fundamental materials technology for the short-wavelength optoelectronics. To this end, we have set the following research objectives : (1) development of widegap II-VI compound semiconductors which have bandgaps ranging from the visible to uv wavelength region ; (2) development of self-organizing growth processes for those semiconductors to fabricate qunantum dots with a nano-meter size. The materials system to be investigated includes a ZnO-based materials system, ZnSe/ZnSe-based heterostructure system, and ZnCdSe/ZnSe-based heterostructure system. We have selected those material systems because of the following reasons : (1) They can cover the wavelength region from the visible to uv range ; (2) The exciton binding energies of ZnO and ZnSe/ZnSe quantum wells have large binding energies of 60 meV and 40 meV, respectively, which are much larger than the thermal energy at room temperature thereby making excitons survive at room temperature or even at higher temperatures ; (3) We have been extensively working on blue-green light emitting devices of ZnCdSe/ZnSe heterostructures. I would like to mention that we have already established MBE techniques to grow those II-VI compounds, which is quite essential to lead the research project to a success. The achievements obtained in this research project can be summarized as follows : (1) We have established the molecular beam epitaxy technique for the growth high-quality widegap II-VI compound semiconductors. In addition to the already established MBE growth techniques for ZnSe, ZnSe, and ZnCdSe, we have developed (a) the oxygen-plasma assisted MBE growth technique for the growth of high-quality ZnO-based materials, (b) the fabrication techniques for heterostructures of ZnSe/ZnS, ZnCdSe/ZnSe, and ZnMgO/ZnO, and (c) the technique to control the lattice polarity of ZnO layers. Those techniques are crucial to the fabrication of well-controlled nano-scale semiconductor quantum dots. (2) We have established the self-organized fabrication processes for ZnO quantum pyramids, ZnSe/ZnS nano-scale quantum dots, and ZnCdSe/ZnSe nano-scale quantum dots. In particluar, the fabrication of ZnO quantum pyramids are the first achievements in oxide semiconductors. (3) We have discovered various novel optical properties unique to those material systems and nano-scale quantum dots. In particular, (a) The effects of localization in ZnCdSe/ZnSe quantum dots on optical properties have been elucidated, which can be utilized to enhance emisison probabilities thereby leading to the fabrication to high-bright light emitting devices. (b) The realization of induced emission from ZnO and ZnO/ZnMgO quantum structures based on excitonic mechanisms, which may open up a excitonic optical devices. (c) The first observation of spectral diffusion in ZnCdSe/ZnSe quantum dots, which may be utilized to fabricate novel optical memory devices. We hope that those achievements will contribute to the establishment of short-wavelength optoelectronics.

  16. Development of nano-scale characterization technology for semicondutors and devices with scanning capacitance microscope

    YAO Takafumi, HANADA Takashi, HAYASHI Tsukasa

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    1997 - 1998

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    A novel scanning capacitance microscoe has been developed with a W cantilever, in which a new optical feed-back system is invented. By considerably suppressing noise due to stray capacitance, high sensitive detection of capacitance variation has become possible, which enables a capacitance as low as 1 aF.The lateral resolution for capacitance measurements is as good as 2Onm. These features are the best among SCaMs which enables direct CV measurements. It is possible to measure dC/dV simultaneously. We have achieved the followings with this novel SCaM : (1) To clarify the physical meaning of dC/dV signals. We have indicated that the dC/dV signal is so dependent on the bias conditions and modulation voltage that its interpretation requires the CV measurements. (2) It is demonstrated that the SCaM can be used to characterize real MOS devices with submicron gate length. With a help of scanning capacitance image of the device, a dC/dV technique can be properly used to image even a slight local change in capacitance. (3) Local CV characteristics of a lateral p-n junction has been measured, while its characteristics have been simulated using a device simulator. It has been demonstrated that the combination of the SCaM with device simulation enable to characterize local electric properties which have hitherto been performed.

  17. 酸化物超伝導体薄膜の原子層成長

    川合 真紀, 関根 理香, 花田 貴, 吉信 淳

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 理化学研究所

    1993 - 1993

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    平成5年度の研究では、酸化物超伝導体の母結晶である無限層化合物SrCuO_2の原子層単位での形成を実現すると同時に、SrCuO_2中に周期的に二重Sr層の導入を行い、人工的に超構造を構築し、その伝導物性を検討した。 一原子層単位での物質合成には基板となる結晶表面を目的とする物質合成に適した状態にする必要がある。前年度までに、基板となるチタン酸ストロンチウム単結晶の表面構造を明かにしており、その情報を手がかりに、無限層化合物の原子層単位での形成を実現した。また、一原子層単位での成長制御法により、二重Sr層を含む無限層(SrCuO_2)薄膜を形成した。無限層m層毎にSr二重層を含む構造をn回繰り返し積層した薄膜を((SrCuO_2)_mSr)_nと表すと、m≧8の範囲では超構造が形成できた。形成された薄膜の抵抗の温度変化を測定したところ、超構造を有する薄膜では、80Kおよび110K付近に抵抗異常が観測された。この異常な振舞いは、測定電流に依存し、測定電流20muA(10A/cm^2)以上では観測されなかった。抵抗異常は単純な無限層構造では観測されず、二重Sr層を含む超構造でのみ観測されたことから、二重Sr層を含む無限層構造に特有な振舞いであると考えられる。

  18. 酸化物超伝導体薄膜の原子層成長

    川合 真紀, 関根 理香, 花田 貴

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 理化学研究所

    1992 - 1992

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    酸化物超伝導体薄膜の原子層成長の制御成長の方法として、現状では、各原子層に対応する元素量を精密に制御し供給する方法がとられている。Bi系銅酸化物や「123」系酸化物においては、供給する元素量の制御により、原子層単位での物質合成が実現されているようである。しかしながら、現実には「各原子層に対応する元素量の精密制御」には供給量の的確な把握が必要とされ、金属元素を供給源とするMBE法においては、かなりの酸化ガス存在下で、%オーダーでの制御性を薄膜形成に要する数時間の間保持することは困難な場合が多い。供給量の的確な把握には、常時供給量をモニターする方法が考えられており、膜厚計による観測や、蒸発して来る金属ビームの濃度を直接原子吸光で調べる方法等が用いられており、それなりの成果を上げている。理想的には、薄膜表面に於て各原子層の形成に対応した情報を的確に把握し、この情報を常時モニターしつつ製膜制御することが望ましい。そこで、本研究においては、供給元素量を精密に制御し、薄膜形成する方法と、原子層形成時に得られるであろう情報を手がかりに、形成制御する方法とを検討した。 平成4年度においては、供給元素量を精密に制御し、薄膜形成する方法として、Bi系銅酸化物薄膜の低温低圧合成に引続き、「123」系銅酸化物薄膜の低温低圧合成を実現した。また、各原子層形成時の情報を手がかりとして薄膜形成する方法の例として、無限層化合物を取り上げ、チタン酸ストロンチウム単結晶表面からの成長を検討した。

  19. 固体表面反応を利用した酸化物超伝導 薄膜原子層の段階的形成

    川合 眞紀, 関根 理香, 花田 貴

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 東京工業大学

    1990 - 1990

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    本研究は、膜形成過程における固体表面上での金属原子の配列構造、電子状を明らかにしつつ表面層を一層ずつの単位で制御、展開し、新しい表面相を創製することを目指している。本年度は、分子線エピタキシ-法により、Bi系2201および2212相の超薄膜を低温低圧条件下にて合成した。また、基板に格子整合のよい酸化物結晶を用いることにより、歪格子を形成し、その構造を議造を議論した。 薄膜の形成は、基板となる単結晶の表面が出発点となる。本研究では、超薄膜の形成に先立ち、基板表面の清浄化を行った。清浄基板表面上にBi系酸化物超伝導薄膜を形成した。Bi,Sr,Cuは製膜室内のKセルにより蒸着した。SrTiO_3(100)上にBi系酸化物を構築する場合、第1層目の膜形成は、Srから始める。清浄表面上に1原子層量に相当するSrを蒸着した後Cu、Srと各々1原子層相当量を蒸着した後、酸化ガスを導入して酸化、結晶化を計る。酸化ガスとしてNO_2を用いると表面2次元構造に起因するパタ-ンが得られる。 SrーCuーSr層を酸化し、2次元構造を得た後に、BiーBiーSrーCuーSrと蒸着したところで再び酸化結晶化する。SrーCuーSr上にBiーBiーSrーCuーSrを4回繰り返し得られた超薄膜はX線回析パタ-ンにより、Bi系のn=1相の構造をしていることが確認された。ひの製膜プロセスは、金属蒸着中の基板温度は常温、酸化過程も300℃と非常に低い温度で行っている。また、酸化ガスの圧力も10^<ー7>Torrの低圧で製膜されている。 チタン酸ストロンチウム(SrtiO_3)、ランタンアルミネイト(LaAlO_3)および酸化マグネシウム(MgO)上でBi系超薄膜の低温低圧エピタキシャル成長を試みた。清浄基板表面から低温でエピタキシャル成長を行った結果、基板の面内格子定数がBi系のa,b軸長と近い場合には、基板の格子定数を反映した薄膜が形成されることが解った。

  20. 団体表面反応を利用した酸化物超伝導薄膜原子層の段階的形成

    川合 眞紀, 関根 理香, 花田 貴

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 東京工業大学

    1989 - 1989

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    膜形成過程における固体表面上での金属原子の配列構造、電子状態を明らかにしつつ表面層を一層ずつの単位で制御、展開し、新しい表面相を創製することを試みた。その結果を、以下の3項目に分け述べる。 1 シリコン表面、Si(100)の不活性化 シリコン表面のダングリングボンドは、表面に一原子層吸着したビスマスと結合する。ビスマスの吸着した表面は、酸素との反応性が小さくなり、不活性化されていることが解った。このシリコン表面での1原子層のBiによる表面不活性化は、酸化物薄膜をシリコン上に積層する際の基板の表面処理として有望な方法である。 2 Cuキレ-ト化合物と酸化物表面水酸基の反応 酸化物表面の官能基と目的元素を含む化合物との反応により、原子層レベルで制御された酸化物超伝導薄膜を形成するためのモデル反応を行なった。Cu(DPM)2は、SiO2上の孤立水酸基と反応して酸化物表面に定量的に固定される。吸着したCuキレ-トのリガンドは、H2Oの気体と400℃で反応させることにより除去される。その結果、酸化物表面にCuの原子を固定することが出来た。この反応は、Cu以外のβジケトネ-ト化合物にも当てはまる。また、利用できる酸化物表面も多岐にわたる。今後、単結晶基板上への展開を行う予定である。 3 単斜晶系(Bi,Pb)_2Sr_2CaCu_2O_uにおける98.5Kの超伝導伝移 Bi系の2212層(Tc=80Kクラス)を窒素もしくはアルゴン中でアニ-ルすることにより、98.5Kの超伝導転移温度を示す相が得られた。結晶構造はPbの含有量とアニ-ル雰囲気によって支配される。98.5Kと高い転移温度を示した物は、単斜晶であり、Cuの形式電荷は2.05であった。

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