-
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance>107 for eFlash-type MRAM
Peer-reviewed
H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, T. Nasuno, T. Tanigawa, Y. Noguchi, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh
IEEE International electron devices meeting 226-229 2022/12
DOI：
10.1109/IEDM45625.2022.10019412
-
Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm
Peer-reviewed
H. Naganuma, S. Miura, H. Honjo, K. Nishioka, T. Watanabe, T. Nasuno, H. Inoue, T. V. A. Nguyen, Y. Endo, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh
Digest of Technical Papers - Symposium on VLSI Technology 2021-June 2021/06
ISSN：
0743-1562
-
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400℃ thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology
Peer-reviewed
H. Honjo, T. V. A. Nguyen, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
International Electron Device Meeting 2019-December 2019/12
DOI：
10.1109/IEDM19573.2019.8993443
ISSN：
0163-1918
-
Effect of surface modification treatment for buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions
Peer-reviewed
H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, T. Endoh
Journal of Applied Physics 126 113902 2019/09
DOI：
10.1063/1.5112017
-
14ns write speed 128Mb density Embedded STT-MRAM with endurance>10^10 and 10yrs retention @85°C using novel low damage MTJ integration process
Peer-reviewed
H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, S. Ikeda, S.- Y. Kang, T. Kubo, K. Yamashita, Y. Yagi, R. Tamura, T. Endoh
International Electron Devise Meeting 2018-December 27.2.1-27.2.4 2018/12
DOI：
10.1109/IEDM.2018.8614606
ISSN：
0163-1918
-
10 nm Φ perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400 degrees C high thermal tolerance by boron diffusion control
Peer-reviewed
H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh
2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY) 2015
DOI：
10.1109/VLSIT.2015.7223661
-
Strong antiferromagnetic interlayer exchange coupling induced by small additions of Re to an Ir interlayer in synthetic antiferromagnetic systems
Yoshiaki Saito, Tufan Roy, Shoji Ikeda, Masafumi Shirai, Hiroaki Honjo, Hirofumi Inoue, Tetsuo Endoh
Scientific Reports 15 (1) 2025/03/15
Publisher:
Springer Science and Business Media LLC
DOI：
10.1038/s41598-025-94088-w
eISSN：
2045-2322
-
Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction
Peer-reviewed
T. V. A. Nguyen, H. Naganuma, H. Honjo, S. Ikeda, T. Endoh
AIP Advances 14 025018-025018 2024/02/01
DOI：
10.1063/9.0000789
-
Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation
Peer-reviewed
Hiroshi Naganuma, Hiroaki Honjo, Chikako Kaneta, Koichi Nishioka, Shoji Ikeda, Tetsuo Endoh
AIP Advances 12 000000-1-000000-11 2022/12
DOI：
10.1063/5.0112741
-
Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer
International-journal
Peer-reviewed
H. Honjo, H. Naganuma, K. Nishioka, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 58 (8) 1-1 2022
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/tmag.2022.3151562
ISSN：
0018-9464
eISSN：
1941-0069
-
Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer
Peer-reviewed
K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T.V.A. Nguyen, T. Watanabe, S. Ikeda, T. Emdoh
IEEE Transactions on Magnetics 1-1 2021/05
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/tmag.2021.3083575
ISSN：
0018-9464
eISSN：
1941-0069
-
Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers
Peer-reviewed
H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 58 (2) 1-1 2021
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/tmag.2021.3078710
ISSN：
0018-9464
eISSN：
1941-0069
-
First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
Peer-reviewed
K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh
IEEE Transactions on Electron Devices 68 (6) 1-6 2021
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/ted.2021.3074103
ISSN：
0018-9383
eISSN：
1557-9646
-
Enhancement of magnetic coupling and magnetic anisotropy in MTJ with multiple CoFeB/MgO interfaces for high thermal stability
Peer-reviewed
K. Nishioka, H.Honjo, H. Naganuma, T.V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh
AIP Advances 11 (2) 2021
DOI：
10.1063/9.0000048
eISSN：
2158-3226
-
Effect of surface modification treatment on top pinned MTJ with perpendicular easy axis
International-journal
Peer-reviewed
H. Honjo, H. Naganuma, T. V. A. Nguyen, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh
AIP advances 11 (2) 025211-025211 2021
Publisher:
AIP Publishing
DOI：
10.1063/9.0000047
eISSN：
2158-3226
-
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition
Peer-reviewed
M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu
IEEE Journal of Solid State Circuits 56 (4) 1116-1128 2020/11
DOI：
10.1109/JSSC.2020.3039800
ISSN：
0018-9200
eISSN：
1558-173X
-
40-nm 1T-1MTJ 128Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design
Peer-reviewed
Hiroki KOIKE, Takaho TANIGAWA, Toshinari WATANABE, Takashi NASUNO, Yasuo NOGUCHI, Mitsuo YASUHIRA, Toru YOSHIDUKA, Yitao MA, Hiroaki HONJO, Koichi NISHIOKA, Sadahiko MIURA, Hirofumi INOUE, Shoji IKEDA, Tetsuo ENDOH
IEEE TRANSACTIONS ON MAGNETICS 57 (3) 2020/11
DOI：
10.1109/TMAG.2020.3038110
ISSN：
0018-9464
eISSN：
1941-0069
-
Enhancement of magnetic interaction and magnetic anisotropy in MTJ with multiple CoFeB/MgO interfaces for high thermal stability
Peer-reviewed
K. Nishioka, H.Honjo, M.Yasuhira, S.Ikeda, T.Endoh
66th Annual Conference on Magnetism and Magnetic Materials 2020/11
-
Effect of surface modification treatment on top pinned MTJ with perpendicular easy axis
Peer-reviewed
H. Honjo, S.Ikeda, M. Yasuhira, T. Endoh
66th Annual Conference on Magnetism and Magnetic Materials 2020/11
-
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹
International-journal
Peer-reviewed
Sadahiko Miura, Koichi Nishioka, Hiroshi Naganuma, Nguyen T. V. A., Hiroaki Honjo, Shoji Ikeda, Toshinari Watanabe, Hirofumi Inoue, Masaaki Niwa, Takaho Tanigawa, Yasuo Noguchi, Toru Yoshizuka, Mitsuo Yasuhira, Tetsuo Endoh
IEEE Transactions on Electron Devices 67 (12) 1-6 2020/10
DOI：
10.1109/ted.2020.3025749
ISSN：
0018-9383
eISSN：
1557-9646
-
Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice
Invited
Hiroki KOIKE, Takaho TANIGAWA, Toshinari WATANABE, Takashi NASUNO, Yasuo NOGUCHI, Mitsuo YASUHIRA, Toru YOSHIDUKA, Yitao MA, Hiroaki HONJO, Koichi NISHIOKA, Sadahiko MIURA, Hirofumi INOUE, Shoji IKEDA, Tetsuo ENDOH
2020 IEEE 31st Magnetic Recording Conference (TMRC) 2020/08/17
DOI：
10.1109/tmrc49521.2020.9366711
-
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance 10-11
S. Miura, K. Nishioka, H. Naganuma, T. V.A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, T. Endoh
Digest of Technical Papers - Symposium on VLSI Technology 2020- 2020/06/01
Publisher:
Institute of Electrical and Electronics Engineers Inc.
DOI：
10.1109/VLSITechnology18217.2020.9265104
ISSN：
0743-1562
-
Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO Interface
Peer-reviewed
Honjo Hiroaki, Niwa Masaaki, Nguyen Thi Van Anh, Naganuma Hiroshi, Endo Yasushi, Yasuhira Mitsuo, Ikeda Shoji, Endoh Tetsuo
IEEE Transactions on Magnetics 56 (8) 1-4 2020/06
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/TMAG.2020.3004576
ISSN：
0018-9464
eISSN：
1941-0069
-
Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM
Invited
Tetsuo Endoh, Hiroaki Honjo, Koichi Nishioka, Shoji Ikeda
VLSI Symposium 2020/06
DOI：
10.1109/VLSITechnology18217.2020.9265042
ISSN：
0743-1562
eISSN：
2158-9682
-
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
Peer-reviewed
M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu
VLSI Symposium 2020-June 2020/06
DOI：
10.1109/VLSICircuits18222.2020.9162774
-
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance > 10^11
Peer-reviewed
S. Miura, K. Nishioka, H. Naganuma, T. V. A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, T. Endoh
VLSI Symposium 1-6 2020/06
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/ted.2020.3025749
ISSN：
0018-9383
eISSN：
1557-9646
-
Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction
Peer-reviewed
M. Niwa, H. Honjo, H. Inoue, T. Endoh
Journal of Vacuum Science & Technology B 38 (3) 033801-033801 2020/05
Publisher:
American Vacuum Society
DOI：
10.1116/1.5144850
ISSN：
2166-2746
eISSN：
2166-2754
-
Novel Quad-Interface MTJ Technology and Its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm
Peer-reviewed
K. Nhishioka, H. Honjo et al.,
IEEE Transactions on electron device 67 (3) 995-1000 2020/02
DOI：
10.1109/TED.2020.2966731
ISSN：
0018-9383
eISSN：
1557-9646
-
A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching
Peer-reviewed
Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Endoh
Japanease Journal of Applied Physics 59 (SG) 2020/02
DOI：
10.35848/1347-4065/ab72d0
ISSN：
0021-4922
eISSN：
1347-4065
-
Structural Analysis of CoFeB/MgO-based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography
Peer-reviewed
M. Niwa, K. Kimura, T. Naijo, A. Oshurahunov, S. Nagamachi, H. Inoue, H. Honjo, S. Ikeda, T. Endoh
IEEE Transactions on Magnetics 1-1 2020
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
DOI：
10.1109/tmag.2020.3008436
ISSN：
0018-9464
eISSN：
1941-0069
-
Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers
Peer-reviewed
HONJO Hiroaki
AIP Advances 9 (12) 125330-125330 2019/12
Publisher:
AIP Publishing
DOI：
10.1063/1.5129794
eISSN：
2158-3226
-
Novel Quad Interface MTJ Technology and Its First Demonstration with High Thermal Stability and Switching Efficiency for STT-MRAM Beyond 2Xnm
Peer-reviewed
K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, T. Endoh
2019 Symposia on VLSI Technology and Circuits 2019-June T120-T121 2019/06
DOI：
10.23919/VLSIT.2019.8776499
ISSN：
0743-1562
-
Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy
Peer-reviewed
Masaaki Niwa, Akira Yasui, Eiji Ikenaga, Hiroaki Honjo, Shoji Ikeda, Tetsuya Nakamura, Tetsuo Endoh
Journal of Applied Physics 125 (203903) 2019/05
DOI：
10.1063/1.5094067
ISSN：
0021-8979
eISSN：
1089-7550
-
12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz
Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
Digest of Technical Papers - IEEE International Solid-State Circuits Conference 2019-February 202-204 2019/03/06
DOI：
10.1109/ISSCC.2019.8662431
ISSN：
0193-6530
-
A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications.
Peer-reviewed
Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
J. Solid-State Circuits 54 (11) 2991-3004 2019
DOI：
10.1109/JSSC.2019.2930910
ISSN：
0018-9200
eISSN：
1558-173X
-
A Fully Nonvolatile Microcontroller Unit with Embedded STT-MRAM and FPGA-Based Accelerator for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology
Peer-reviewed
M. Natsui, D. Suzuki, A. Tamakoshi, T. Watanabe, H. Honjo, H. Koike, T. Nasuno, Y. Ma, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu
IEEE Journal of Solid State Circuits 2019
DOI：
10.1109/JSSC.2019.2930910
-
Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double CoFeB/MgO Interface Magnetic Tunnel Junctions
Peer-reviewed
S.Miura, H.Sato, S.Ikeda, K. Nishioka, H.Honjo, T.Endoh
IEEE. Transaction on Magnetics 55 (7) 2019
DOI：
10.1109/TMAG.2019.2901841
ISSN：
0018-9464
eISSN：
1941-0069
-
Critical role of sputtering condition for reference layer on magnetic and transport properties of perpendicular-anisotropy magnetic tunnel junction.
Peer-reviewed
H. Honjo, H. Sato, S. Ikeda, T. Endoh
IEEE. Transaction on Magnetics 2019/01
DOI：
10.1109/TMAG.2019.2897067
-
A Recent Progress of Spintronics Devices for Integrated Circuit Applications
Peer-reviewed
Tetsuo Endoh, Hiroaki Honjo
Journal of Low Power Electronics and Applications 8 (4) 2018/11
DOI：
10.3390/jlpea8040044
-
STEM tomography study on structural features induced by MTJ processingi
Peer-reviewed
Masaaki Niwa, Kosuke Kimura, Toshinari Watanabe, Takanori Naijou, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endoh
Applied Physics A 124 (724) 2018/10
DOI：
10.1007/s00339-018-2144-x
ISSN：
0947-8396
eISSN：
1432-0630
-
1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning
Peer-reviewed
Hideo Sato, Toshinari Watanabe, Hiroki Koike, Takashi Saito, Sadahiko Miura, Hiroaki Honjo, Hirofumi Inoue, Shoji Ikeda, Yasuo Noguchi, Takaho Tanigawa, Mitsuo Yasuhira, Hideo Ohno, Song Yun Kang, Takuya Kubo, Koichi Takatsuki, Koji Yamashita, Yasushi Yagi, Ryo Tamura, Takuro Nishimura, Koh Murata, Tetsuo Endoh
2018 IEEE International Memory Workshop (IMW) 1-4 2018/05
Publisher:
IEEE
DOI：
10.1109/imw.2018.8388774
-
Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ
Peer-reviewed
Takashi Saito, Kenchi Ito, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endoh
IEEE Transactions on Magnetics 54 (4) 2018/04/01
DOI：
10.1109/TMAG.2017.2688440
ISSN：
0018-9464
-
Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer
Peer-reviewed
H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, H. Inoue, M. Muraguchi, M. Niwa, H. Ohno, T. Endoh
IEEE TRANSACTIONS ON MAGNETICS 53 (11) 2017/11
DOI：
10.1109/TMAG.2017.2701838
ISSN：
0018-9464
eISSN：
1941-0069
-
Origin of variation of shift field via annealing at 400 degrees C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer
Peer-reviewed
H. Honjo, S. Ikeda, H. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh
AIP ADVANCES 7 (5) 2017/05
DOI：
10.1063/1.4973946
ISSN：
2158-3226
-
A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching
Peer-reviewed
Yitao Ma, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 56 (4) 04CF08 2017/04
DOI：
10.7567/JJAP.56.04CF08
ISSN：
0021-4922
eISSN：
1347-4065
-
A Compact and Ultra-Low-Power STT-MRAMBased Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching
Peer-reviewed
Y.Ma, S.Miura, H.Honjo, S.Ikeda, T.Hanyu, H.Ohno, T.Endoh
International Conference on Solid State Devices and Materials (SSDM) B-2-06 83-84 2016/09/26
-
Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition
Peer-reviewed
H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh
IEEE TRANSACTIONS ON MAGNETICS 52 (7) 2016/07
DOI：
10.1109/TMAG.2016.2518203
ISSN：
0018-9464
eISSN：
1941-0069
-
Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy
Peer-reviewed
Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa
JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 2016/04
DOI：
10.7567/JJAP.55.04EE05
ISSN：
0021-4922
eISSN：
1347-4065
-
Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy
Peer-reviewed
Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa
JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 04EE05 2016/04
DOI：
10.7567/JJAP.55.04EE05
ISSN：
0021-4922
eISSN：
1347-4065
-
A 600-mu W ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme
Peer-reviewed
Yitao Ma, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 2016/04
DOI：
10.7567/JJAP.55.04EF15
ISSN：
0021-4922
eISSN：
1347-4065
-
Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy
Peer-reviewed
Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa
JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 04EE05 2016/04
DOI：
10.7567/JJAP.55.04EE05
ISSN：
0021-4922
eISSN：
1347-4065
-
A 600-mu W ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme
Peer-reviewed
Yitao Ma, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 04EF15 2016/04
DOI：
10.7567/JJAP.55.04EF15
ISSN：
0021-4922
eISSN：
1347-4065
-
Characterization of Leakage Spot Density in MgO Tunneling Barrier of Magnetic Tunneling Junction by Conductive AFM
Peer-reviewed
佐藤創志, 本庄弘明, 池田正二, 大野英男, 遠藤哲郎, 丹羽正昭
電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-（第21回研究会） 2016/01/22
-
Optimum boron concentration difference between single and double CoFeB/MgO interface perpendicular MTJs with high thermal tolerance and its mechanism
Peer-reviewed
H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M.Yasuhira, T.Tanigawa, H.Koike, M.Muraguchi, M.Niwa, K.Ito, H.Ohno, T.Endoh
13th Joint MMM-Intermag Conference FB-06 2016/01/14
-
Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip
Peer-reviewed
Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Toshinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh
2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW) 2016
DOI：
10.1109/IMW.2016.7495264
ISSN：
2330-7978
-
Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip
Peer-reviewed
Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Toshinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh
2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW) 2016
DOI：
10.1109/imw.2016.7495264
ISSN：
2330-7978
-
Driving Force in Diffusion and Redistribution of Reducing Agents During Redox Reaction on the Surface of CoFeB Film
Peer-reviewed
S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa
IEEE TRANSACTIONS ON MAGNETICS 51 (11) 1 2015/11
DOI：
10.1109/TMAG.2015.2434840
ISSN：
0018-9464
eISSN：
1941-0069
-
Optimization of CoFeB capping layer thickness for characterization of leakage spots in MgO tunneling barrier of magnetic tunnel junction
Peer-reviewed
S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa
2015 International Conference on Solid State Devices and Materials O-5-4 2015/09/29
-
Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing (vol 106, 142407, 2015)
Peer-reviewed
Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa
APPLIED PHYSICS LETTERS 106 (24) 249901 2015/06
DOI：
10.1063/1.4922749
ISSN：
0003-6951
eISSN：
1077-3118
-
Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation
Peer-reviewed
Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 2015/04
DOI：
10.7567/JJAP.54.04DE08
ISSN：
0021-4922
eISSN：
1347-4065
-
Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing
Peer-reviewed
Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa
APPLIED PHYSICS LETTERS 106 (14) 2015/04
DOI：
10.1063/1.4917277
ISSN：
0003-6951
eISSN：
1077-3118
-
Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact
Peer-reviewed
Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Keiichi Tokutome, Hiroaki Koike, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 04DM06-1-04DM06-4 2015/04
DOI：
10.7567/JJAP.54.04DM06
ISSN：
0021-4922
eISSN：
1347-4065
-
Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact
Peer-reviewed
Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Keiichi Tokutome, Hiroaki Koike, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 04DM06 2015/04
DOI：
10.7567/JJAP.54.04DM06
ISSN：
0021-4922
eISSN：
1347-4065
-
Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction
Peer-reviewed
Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
IEEE JOURNAL OF SOLID-STATE CIRCUITS 50 (2) 476-489 2015/02
DOI：
10.1109/JSSC.2014.2362853
ISSN：
0018-9200
eISSN：
1558-173X
-
Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure
Peer-reviewed
D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
2015 SYMPOSIUM ON VLSI CIRCUITS (VLSI CIRCUITS) 2015-August 7223644 2015
DOI：
10.1109/VLSIT.2015.7223644
-
Diffusion Behaviors Observed on the Surface of CoFeB Film after the Natural Oxidation and the Annealing
Peer-reviewed
S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa
2015 IEEE MAGNETICS CONFERENCE (INTERMAG) GP-01 2015
DOI：
10.1109/INTMAG.2015.7157496
-
1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance
Peer-reviewed
Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Tosinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh
2015 IEEE 7TH INTERNATIONAL MEMORY WORKSHOP (IMW) 141-144 2015
DOI：
10.1109/IMW.2015.7150264
ISSN：
2330-7978
-
Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure
Peer-reviewed
D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY) 172-173 2015
-
1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance
Peer-reviewed
Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Tosinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh
2015 IEEE 7TH INTERNATIONAL MEMORY WORKSHOP (IMW) 141-144 2015
DOI：
10.1109/imw.2015.7150264
ISSN：
2330-7978
-
Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device
Peer-reviewed
Hiroaki Honjo, Shunsuke Fukami, Kunihiko Ishihara, Keizo Kinoshita, Yukihide Tsuji, Ayuka Morioka, Ryusuke Nebashi, Keiichi Tokutome, Noboru Sakimura, Michio Murahata, Sadahiko Miura, Tadahiko Sugibayashi, Naoki Kasai, Hideo Ohno
IEEE TRANSACTIONS ON MAGNETICS 50 (11) 1401904-1401904 2014/11
DOI：
10.1109/TMAG.2014.2325019
ISSN：
0018-9464
eISSN：
1941-0069
-
Process-induced damage and its recovery for a CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy axis
Peer-reviewed
Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Hideo Sato, Kotaro Mizunuma, Keiichi Tokutome, Michio Murahata, Shoji Ikeda, Sadahiko Miura, Naoki Kasai, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (10) 2014/10
DOI：
10.7567/JJAP.53.103001
ISSN：
0021-4922
eISSN：
1347-4065
-
A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit
Peer-reviewed
T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
International Conference on Solid State Dvices and Materails (SSDM) A-8-3 2014/09/09
-
A Power-gated 32bit MPU with a Power Controller Circuit Activated by Deep-sleep-mode Instraction Achieving Ultra-low Power Operation
Peer-reviewed
H. Koike, T. Ohsawa, S. Miura, H. Honjo, K, Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
International Conference on Solid State Dvices and Materails (SSDM) A-7-1 2014/09/09
-
Properties of Perpendicular-Anisotrapy Magnetic Tunnel Junctions Fabricated over the Cu Via
Peer-reviewed
S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H, Koike, S. Ikeda, T. Endoh, H. Ohno
International Conference on Solid State Dvices and Materails (SSDM) A-6-3 2014/09/09
-
A study on dry etching process for three terminal spintronics devices
Peer-reviewed
HONJO Hiroaki
Tohoku University 2014/09
-
Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure
Peer-reviewed
D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, S. Fukami, H. Sato, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
JOURNAL OF APPLIED PHYSICS 115 (17) 17B742-1-17B742-3 2014/05
DOI：
10.1063/1.4868332
ISSN：
0021-8979
eISSN：
1089-7550
-
Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure
Peer-reviewed
D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, S. Fukami, H. Sato, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
JOURNAL OF APPLIED PHYSICS 115 (17) 2014/05
DOI：
10.1063/1.4868332
ISSN：
0021-8979
eISSN：
1089-7550
-
Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer
Peer-reviewed
H. Honjo, S. Fukami, K. Ishihara, R. Nebashi, K. Kinoshita, K. Tokutome, M. Murahata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno
JOURNAL OF APPLIED PHYSICS 115 (17) 17B750 2014/05
DOI：
10.1063/1.4868623
ISSN：
0021-8979
eISSN：
1089-7550
-
1.5ns/2.1nsのランダム読出／書込サイクル時間を達成した不揮発性混載メモリ用1Mb STT-MRAM －6T2MTJセルにバックグラウンド書き込み（BGW）方式を適用
Invited
Peer-reviewed
大澤隆, 小池洋紀, 三浦貞彦, 木下啓藏, 本庄弘明, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎
信学技報 114 (13) 33-38 2014/04/17
Publisher:
The Institute of Electronics, Information and Communication Engineers
ISSN：
0913-5685
-
MTJベース不揮発フリップフロップを用いた3μsec-Entry/Exit 遅延時間のマイクロプロセッサ
Invited
Peer-reviewed
小池洋紀, 崎村昇, 根橋竜介, 辻幸秀, 森岡あゆ香, 三浦貞彦, 本庄弘明, 杉林直彦, 大澤隆, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎
信学技報 114 (13) 85-90 2014/04/17
Publisher:
The Institute of Electronics, Information and Communication Engineers
ISSN：
0913-5685
-
Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell
Peer-reviewed
Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (4) 2014/04
DOI：
10.7567/JJAP.53.04ED13
ISSN：
0021-4922
eISSN：
1347-4065
-
Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs
Peer-reviewed
Hideo Sato, Shoji Ikeda, Shunsuke Fukami, Hiroaki Honjo, Shinya Ishikawa, Michihiko Yamanouchi, Kotaro Mizunuma, Fumihiro Matsukura, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (4) 2014/04
DOI：
10.7567/JJAP.53.04EM02
ISSN：
0021-4922
eISSN：
1347-4065
-
Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion
Peer-reviewed
Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Ryusuke Nebashi, Keiichi Tokutome, Michio Murahata, Sadahiko Miura, Naoki Kasai, Shoji Ikeda, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 53 (3) 2014/03
DOI：
10.7567/JJAP.53.03DF03
ISSN：
0021-4922
eISSN：
1347-4065
-
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing
Peer-reviewed
Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi
Proceedings - IEEE International Symposium on Circuits and Systems 1588-1591 2014
Publisher:
Institute of Electrical and Electronics Engineers Inc.
DOI：
10.1109/ISCAS.2014.6865453
ISSN：
0271-4310
-
Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm
Peer-reviewed
S. Ikeda, H. Sato, H. Honjo, E. C. I. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh, H. Ohno
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 796-799 2014
DOI：
10.1109/IEDM.2014.7047160
-
A Delay Circuit with 4-Terminal Magnetic-Random-Access-Memory Device for Power-Efficient Time-Domain Signal Processing
Peer-reviewed
Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi
2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) 1588-1591 2014
DOI：
10.1109/ISCAS.2014.6865453
ISSN：
0271-4302
-
A 90nm 20MHz Fully Nonvolatile Microcontroller for Standby-Power-Critical Applications
Peer-reviewed
Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi
2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC) 57 184-+ 2014
DOI：
10.1109/ISSCC.2014.6757392
ISSN：
0193-6530
-
Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications
Peer-reviewed
Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
IEICE Electronics Express 10 (23) 20130772 2013/11/21
DOI：
10.1587/elex.10.20130772
ISSN：
1349-2543
-
Fabrication of a Perpendicular-MTJ-Based Compact Nonvolatile Programmable Switch Using Shared-Write-Control-Transistor Structure
Peer-reviewed
D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
Abst. 58th Annual Conference on Magnetism and Magnetic Materials 233 2013/11
-
MTJ resistance distribution and its bit error rate of 1-kbit 1T-1MTJ STT-MRAM cell arrays fabricated on a 300-mm wafer
Peer-reviewed
H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno
58th Annual Conference on Magnetism & Magnetic Materials Abstract 2013/11
-
Demonstration of a Nonvolatile Processor Core Chip with Software-Controlled Three-Terminal MRAM Cells for Standby-Power Critical Applications
Peer-reviewed
R. Nebashi, Y. Tsuji, H. Honjo, N. Sakimura, A. Morioka, K. Tokutome, S. Miura, S. Fukami, M. Yamanouchi, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi
2013 International Conference on Solid State Devices and Materials (SSDM) M-8-3 1102-1103 2013/09/24
-
Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process
Peer-reviewed
S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, N. Kasai, S. Ikeda, T. Endoh, H. Ohno
2013 International Conference on Solid State Devices and Materials (SSDM) PS-12-11 396-397 2013/09/24
-
A 4x4 Nonvolatile Multiplier Using Novel MTJ-CMOS Hybrid Latch and Flip-Flop
Peer-reviewed
Takashi Ohsawa, Sadahiro Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 International Conference on Solid State Devices and Materials (SSDM) M-6-3 1086-1087 2013/09/24
-
Wide Operational Margin Capability of 1kbit STT-MRAM Array Chip with 1-PMOS and 1-Bottom-Pin-MTJ Type Cell
Peer-reviewed
Hiroki Koike, Takashi Ohsawa, Sadahiro Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 International Conference on Solid State Devices and Materials (SSDM) M-7-3 1094-1095 2013/09/24
-
IEEE Journal of Solid-State Circuits
Peer-reviewed
T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme 48 (6) 1511-1520 2013/06/22
-
A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories
Peer-reviewed
Takashi Ohsawa, Sadahiro Miura, Keizo Kinoshita, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh
2013 Symposium on VLSI Technology (VLSIT) & 2013 Symposium on VLSI Cricuit (VLSIC) Digest of Technical Papers C110-C111 2013/06/12
-
Applied Physics Letters
Peer-reviewed
S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, H. Ohno
Electrical endurance of Co/Ni wire for magnetic domain wall motion device 102 222410(1)-222410(4) 2013/06/06
-
Electrical endurance of Co/Ni wire for magnetic domain wall motion device
Peer-reviewed
S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, H. Ohno
Applied Physics Letters 102 (22) 222410 2013/06/03
DOI：
10.1063/1.4809734
ISSN：
0003-6951
-
Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine
Peer-reviewed
S. Matsunaga, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, M. Natsui, A. Mochizuki, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu
2013 Symposium on VLSI Circuits Digest of Technical Papers 106-107 2013/06
-
A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme
Peer-reviewed
Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
IEEE JOURNAL OF SOLID-STATE CIRCUITS 48 (6) 1511-1520 2013/06
DOI：
10.1109/JSSC.2013.2253412
ISSN：
0018-9200
eISSN：
1558-173X
-
スピン論理集積回路における基本ゲートの高信頼化技術
Peer-reviewed
辻幸秀, 根橋竜介, 崎村昇, 森岡あゆ香, 本庄弘明, 徳留圭一, 三浦貞彦, 鈴木哲広, 深見俊輔, 木下啓藏, 羽生貴弘, 遠藤哲郎, 笠井直記, 大野英男, 杉林
信学技報, 113 (1) 41-46 2013/04/01
Publisher:
The Institute of Electronics, Information and Communication Engineers
ISSN：
0913-5685
-
4T-2MTJセル構造に基づく不揮発TCAMチップの実現
Peer-reviewed
松永翔雲, 三浦貞彦, 本庄弘明, 木下啓蔵, 池田正二, 遠藤哲郎, 大野英男, 羽生貴弘
信学技報, 113 (1) 33-38 2013/04/01
-
A fine-grained power gating architecture for MTJ-based embedded memories
Peer-reviewed
Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
The 3nd CSIS International Symposium on Spintronics-based VLSIs 2013/01/31
-
A Power-Gated MPU with 3-microsecond Entry/Exit Delay using MTJ-Based Nonvolatile Flip-Flop
Peer-reviewed
H. Koike, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, S. Miura, H. Honjo, T. Sugibayashi
PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC) 317-320 2013
-
Fabrication of a 99%-energy-less nonvolatile multi-functional CAM chip using hierarchical power gating for a massively-parallel full-text-search engine
Peer-reviewed
Matsunaga, S, Sakimura, N, Nebashi, R, Tsuji, Y, Morioka, A, Sugibayashi, T, Miura, S, Honjo, H, Kinoshita, K, Sato, H.a, Fukami, S.a, Natsui, M, Mochizuki, A.a, Ikeda, S.a c, Endoh, T.a, Ohno, H.a c, Hanyu, T.a c
IEEE Symp VLSI Circuits Dig Tech Pap 6578736 2013
-
Nonvolatile Logic-in-Memory Array Processor in 90nm MTJ/MOS Achieving 75% Leakage Reduction Using Cycle-Based Power Gating
Peer-reviewed
Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
2013 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC) 56 194-+ 2013
DOI：
10.1109/ISSCC.2013.6487696
ISSN：
0193-6530
-
Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions
Peer-reviewed
Keizo Kinoshita, Tadashi Yamamoto, Hiroaki Honjo, Naoki Kasai, Shoji Ikeda, Hideo Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS 51 (8) 08HA01.1-08HA01.6 2012/08
DOI：
10.1143/JJAP.51.08HA01
ISSN：
0021-4922
eISSN：
1347-4065
-
3端子磁壁移動型セルを用いた不揮発性コンテントアドレッサブルメモリ
Peer-reviewed
根橋竜介, 崎村昇, 辻幸秀, 深見俊輔, 本庄弘明, 齊藤信作, 三浦貞彦, 石綿延行, 木下啓蔵, 羽生貴弘, 遠藤哲郎, 笠井直記, 大野英男, 杉林直彦
信学技報 112 (15) 49-54 2012/04/01
Publisher:
The Institute of Electronics, Information and Communication Engineers
ISSN：
0913-5685
-
Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits
Peer-reviewed
H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno
JOURNAL OF APPLIED PHYSICS 111 (7) 07C709 2012/04
DOI：
10.1063/1.3675268
ISSN：
0021-8979
eISSN：
1089-7550
-
Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions
Peer-reviewed
H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno
JOURNAL OF APPLIED PHYSICS 111 (7) 07C903 2012/04
DOI：
10.1063/1.3671437
ISSN：
0021-8979
eISSN：
1089-7550
-
High-Speed Simulator including Accurate MTJ Models for Spintronics Integrated Circuit Design
Peer-reviewed
Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Hiroaki Honjo, Tadahiko Sugibayashi, Hiroki Koike, Takashi Ohsawa, Shunsuke Fukami, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) 1971-1974 2012
DOI：
10.1109/ISCAS.2012.6271663
ISSN：
0271-4302
-
Spintronics primitive gate with high error correction efficiency 6(P error) 2 for logic-in memory architecture
Peer-reviewed
Y. Tsuji, R. Nebashi, N. Sakimura, A. Morioka, H. Honjo, K. Tokutome, S. Miura, T. Suzuki, S. Fukami, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi
Digest of Technical Papers - Symposium on VLSI Technology 63-64 2012
DOI：
10.1109/VLSIT.2012.6242462
ISSN：
0743-1562
-
High-speed and reliable domain wall motion device: Material design for embedded memory and logic application
Peer-reviewed
S. Fukami, M. Yamanouchi, T. Koyama, K. Ueda, Y. Yoshimura, K. J. Kim, D. Chiba, H. Honjo, N. Sakimura, R. Nebashi, Y. Kato, Y. Tsuji, A. Morioka, K. Kinoshita, S. Miura, T. Suzuki, H. Tanigawa, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, H. Ohno
Digest of Technical Papers - Symposium on VLSI Technology 61-62 2012
DOI：
10.1109/VLSIT.2012.6242461
ISSN：
0743-1562
-
Spintronics primitive gate with high error correction efficiency 6(P error) 2 for logic-in memory architecture
Peer-reviewed
Y. Tsuji, R. Nebashi, N. Sakimura, A. Morioka, H. Honjo, K. Tokutome, S. Miura, T. Suzuki, S. Fukami, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi
Digest of Technical Papers - Symposium on VLSI Technology T7.4 63-64 2012
DOI：
10.1109/VLSIT.2012.6242462
ISSN：
0743-1562
-
1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times
Peer-reviewed
T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Tokutome, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
IEEE Symposium on VLSI Circuits, Digest of Technical Papers J-C6.3 46-47 2012
DOI：
10.1109/VLSIC.2012.6243782
-
A 3.14 um 2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture
Peer-reviewed
Shoun Matsunaga, Sadahiko Miura, Hiroaki Honjou, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
IEEE Symposium on VLSI Circuits, Digest of Technical Papers J-C6.2 44-45 2012
DOI：
10.1109/VLSIC.2012.6243781
-
A Content Addressable Memory Using Magnetic Domain Wall Motion Cells
Peer-reviewed
R. Nebashi, N. Sakimura, Y. Tsuji, S. Fukami, H. Honjo, S. Saito, S. Miura, N. Ishiwata, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi
2011 Symposium on VLSI Circuits, Digest of Technical Papers 300-301 2011/06
-
A content addressable memory using magnetic domain wall motion cells
Peer-reviewed
Nebashi, R, Sakimura, N, Tsuji, Y, Fukami, S.a, Honjo, H, Saito, S.a, Miura, S.a, Ishiwata, N, Kinoshita, K.a, Hanyu, T, Endoh, T, Kasai, N, Ohno, H, Sugibayashi, T, a
IEEE Symp VLSI Circuits Dig Tech Pap 5986430-301 2011
-
Three-terminal domain-wall cell architectures
Peer-reviewed
N. Ishiwata, S. Fukami, S. Saitho, R. Nebashi, N. Sakimura, H. Honjo, S. Miura, T. Sugibayashi, Y. Thuji, M. Murahata, H. Ohno, T. Endoh, T. Hanyu, N. Kasai
International Magnetics Conference 2011 abstract 2011
-
Current-induced Domain Wall Motion MRAM
Peer-reviewed
N. Ishiwata, S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, S. Saito, R.Nebashi, N.Sakimura, H. Honjo, K. Mori, T. Igarashi, H. Tanigawa, S. Miura, T. Sugibayashi
Int Magnetics Conf/Int Conf on Magnetism & Magnetic Materials Abstract 2011
-
Current Status and Future Challemge of Embedded High-speed MRAM
Peer-reviewed
S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, S. Saitoh, R. Nebashi, N. Sakimura, H. Honjo, K. Mori, E. Kariyada, Y. Kato, K. Suemitsu, H. Tanigawa, K. Kinoshita, S. Miura, N. Ishiwata, T. Sugibayashi
International Conference on Solid State Devices and Materials Proceedings 2010
-
Analysis of MTJ Edge Deformation Influence on Switching Current Distribution for Next-Generation High-Speed MRAMs
Peer-reviewed
Yukoh Katoh, Shinsaku Saito, Hiroaki Honjo, Ryusuke Nebashi, Noboru Sakimura, Tetsuhiro Suzuki, Sadahiko Miura, Tadahiko Sugibayashi
IEEE TRANSACTIONS ON MAGNETICS 45 (10) 3804-3807 2009/10
DOI：
10.1109/TMAG.2009.2022336
ISSN：
0018-9464
eISSN：
1941-0069
-
Performance of shape-varying magnetic tunneling junction for high-speed magnetic random access memory cells
Peer-reviewed
H. Honjo, S. Fukami, R. Nebashi, T. Suzuki, N. Ishiwata, S. Miura, T. Sugibayashi
JOURNAL OF APPLIED PHYSICS 105 (7) 07C921 2009/04
DOI：
10.1063/1.3062825
ISSN：
0021-8979
-
Low-Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM
Peer-reviewed
S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, Y. Ozaki, S. Saito, R. Nebashi, N. Sakimura, H. Honjo, K. Mori, C. Igarashi, S. Miura, N. Ishiwata, T. Sugibayashi
2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 230-+ 2009
-
A 90nm 12ns 32Mb 2T1MTJ MRAM
Peer-reviewed
R. Nebashi, N. Sakimura, H. Honjo, S. Saito, Y. Ito, S. Miura, Y. Kato, K. Mori, Y. Ozaki, Y. Kobayashi, N. Ohshima, K. Kinoshita, T. Suzuki, K. Nagahara, N. Ishiwata, K. Suemitsu, S. Fukami, H. Hada, T. Sugibayashi, N. Kasai
Digest of Technical Papers - IEEE International Solid-State Circuits Conference 4977508-464 2009
DOI：
10.1109/ISSCC.2009.4977508
ISSN：
0193-6530
-
High-speed Magnetic Memory based on Spin-Torque Domain Wall Motion
Peer-reviewed
N. Ishiwata, S. Fukami, T.Suzuki, K. Nagahara, N. Ohshima, H. Honjo, K. Mori, T. Igarashi, S. Miura, T. Sugibayashi, K. Ozaki, S. Saito, R. Nebashi, N. Sakimura
Int Conf on Solid State Devices & Materials Proceedings 2009
-
A 90nm 12ns 32Mb 2T1MTJ MRAM
Peer-reviewed
R. Nebashi, N. Sakimura, H. Honjo, S. Saito, Y. Ito, S. Miura, Y. Kato, K. Mori, Y. Ozaki, Y. Kobayashi, N. Ohshima, K. Kinoshita, T. Suzuki, K. Nagahara, N. Ishiwata, K. Suemitsu, S. Fukami, H. Hada, T. Sugibayashi, N. Kasai
Digest of Technical Papers - IEEE International Solid-State Circuits Conference 462-464 2009
DOI：
10.1109/ISSCC.2009.4977508
ISSN：
0193-6530
-
Low write-current magnetic random access memory cell with anisotropy-varied free layers
Peer-reviewed
S. Fukami, H. Honjo, T. Suzuki, N. Ishiwata
JOURNAL OF APPLIED PHYSICS 104 (11) 113901 2008/12
DOI：
10.1063/1.3032894
ISSN：
0021-8979
-
Microwave spectrum of the GeCl radical
Peer-reviewed
Keiichi Tanaka, Hiroaki Honjou, Masaki J. Tsuchiya, Takehiko Tanaka
JOURNAL OF MOLECULAR SPECTROSCOPY 251 (1-2) 369-373 2008/09
DOI：
10.1016/j.jms.2008.04.007
ISSN：
0022-2852
eISSN：
1096-083X
-
Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell
Peer-reviewed
H. Honjo, R. Nebashi, T. Suzuki, S. Fukami, N. Ishiwata, T. Sugibayashi, N. Kasai
JOURNAL OF APPLIED PHYSICS 103 (7) 07A711 2008/04
DOI：
10.1063/1.2839288
ISSN：
0021-8979
-
Improvement of thermal stability of magnetoresistive random access memory device with SiN protective film deposited by high-density plasma chemical vapor deposition
Peer-reviewed
Katsumi Suemitsu, Yuichi Kawano, Hiroaki Utsumi, Hiroaki Honjo, Ryusuke Nebashi, Shinsaku Saito, Norikazu Ohshima, Tadahiko Sugibayashi, Hiromitsu Hada, Tatsuhiko Nohisa, Tadashi Shimazu, Masahiko Inoue, Naoki Kasai
JAPANESE JOURNAL OF APPLIED PHYSICS 47 (4) 2714-2718 2008/04
DOI：
10.1143/JJAP.47.2714
ISSN：
0021-4922
-
A 500-MHz MRAM Macro for High-performance SoCs
Peer-reviewed
Noboru Sakimura, Ryusuke Nebashi, Hiroaki Honjo, Shinsaku Saito, Yuko Kato, Tadahiko Sugibayashi
2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE 261-264 2008
DOI：
10.1109/ASSCC.2008.4708778
-
A 16-mb toggle MRAM with burst modes
Peer-reviewed
Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken-ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Norikazu Hshima, Hiromitsu Hada, Nobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara
IEEE JOURNAL OF SOLID-STATE CIRCUITS 42 (11) 2378-2385 2007/11
DOI：
10.1109/JSSC.2007.906195
ISSN：
0018-9200
eISSN：
1558-173X
-
Reduction of writing field distribution in a magnetic random access memory with toggle switching
Peer-reviewed
Shunsuke Fukami, Hiroaki Honjo, Tetsuhiro Suzuki, Nobuyuki Ishiwata
IEEE TRANSACTIONS ON MAGNETICS 43 (8) 3512-3516 2007/08
DOI：
10.1109/TMAG.2007.900573
ISSN：
0018-9464
-
MRAM cell technology for over 500-MHz SoC
Peer-reviewed
Noboru Sakimura, Tadahiko Sugibayashi, Takeshi Honda, Hiroaki Honjo, Shinsaku Saito, Tetsuhiro Suzuki, Nobuyuki Ishiwata, Shuichi Tahara
IEEE JOURNAL OF SOLID-STATE CIRCUITS 42 (4) 830-838 2007/04
DOI：
10.1109/JSSC.2007.891665
ISSN：
0018-9200
eISSN：
1558-173X
-
A 250-MHz 1-mbit embedded MRAM macro using 2T1MTJ cell with bitline separation and half-pitch shift architecture
Peer-reviewed
Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Hiroaki Honjo, Shinsaku Saito, Yuko Kato, Naoki Kasai
2007 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS 216-219 2007
-
Large exchange coupling in synthetic antiferromagnet with ultrathin seed layer
Peer-reviewed
Yoshiyuki Fukumoto, Hiroaki Honjo, Chuji Igarashi, Toshihiko Nagase, Nobuyuki Ishiwata, Sumio Ikegawa, Hiroaki Yoda, Shuichi Tahara
IEEE TRANSACTIONS ON MAGNETICS 42 (10) 2636-2638 2006/10
DOI：
10.1109/TMAG.2006.878864
ISSN：
0018-9464
eISSN：
1941-0069
-
Conceptual material design for magnetic tunneling junction cap layer for high magnetoresistance ratio
Peer-reviewed
M Nagamine, T Nagase, K Nishiyama, M Yoshikawa, M Amano, Y Asao, S Ikegawa, H Yoda, H Honjo, K Mori, N Ishiwata, S Tahara
JOURNAL OF APPLIED PHYSICS 99 (8) 08K703 2006/04
DOI：
10.1063/1.2173637
ISSN：
0021-8979
-
Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures
Peer-reviewed
Y Fukumoto, T Suzuki, K Mori, H Honjo, C Igarashi, N Ohshima, S Miura, N Ishiwata, S Tahara, Y Asao, H Yoda
JOURNAL OF APPLIED PHYSICS 99 (8) 08N905 2006/04
DOI：
10.1063/1.2173962
ISSN：
0021-8979
eISSN：
1089-7550
-
A 16Mb toggle MRAM with burst modes
Peer-reviewed
Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken-Ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Hiromitsu Hada, Nobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara
2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006 299-302 2006
DOI：
10.1109/ASSCC.2006.357910
-
MRAM Cell Technology for Over 500MHz SoC
Peer-reviewed
N. Sakimura, T. Sugibayashi, Y. Honda, H. Honjo, S. Saito, T. Suzuki, N. Ishiwata, S.Tahara
Symp on VLSI Circuits Proceedings 2006
-
Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current
Peer-reviewed
T Suzuki, Y Fukumoto, K Mori, H Honjo, R Nebashi, S Miura, K Nagahara, S Saito, H Numata, K Tsuji, T Sugibayashi, H Hada, N Ishiwata, Y Asao, S Ikegawa, H Yoda, S Tahara
2005 Symposium on VLSI Technology, Digest of Technical Papers 188-189 2005
DOI：
10.1109/.2005.1469262
-
Thermally Stable MTJ for High Density MRAM
Peer-reviewed
S. Ikegawa, T. Kishi, Y. Asao, T. Sugibayashi, H. Hada, S. Tahara, H. Yoda, N. Ishiwata, M. Nagamine, T. Nagase, K. Nishiyama, T. Mituzuka, N. Ohshima, H. Honjo, T. Ueda
Int Conf on Solid State Devices & Materials Proceedings 2004
-
Read performance of tunneling magnetoresistive heads
Peer-reviewed
K Ishihara, M Nakada, E Fukami, K Nagahara, H Honjo, K Ohashi
IEEE TRANSACTIONS ON MAGNETICS 37 (4) 1687-1690 2001/07
DOI：
10.1109/20.950938
ISSN：
0018-9464
-
Co-Ni-Fe write heads with a 10-mu m yoke length for high-speed recording
Peer-reviewed
Y Nonaka, H Honjo, T Toba, S Saito, T Ishi, M Saito, N Ishiwata, K Ohashi
IEEE TRANSACTIONS ON MAGNETICS 36 (5) 2514-2516 2000/09
DOI：
10.1109/20.908490
ISSN：
0018-9464
-
CoNiFe write heads with a 10-μm core for high-speed recording
Y. Nonaka, H. Honjo, T. Toba, S. Saitho, T. Ishi, M. Saito, N. Ishiwata, K. Ohashi
Digests of the Intermag Conference 2000
Publisher:
IEEE
ISSN：
0074-6843
-
Purity of films and performance of recording heads
Peer-reviewed
K Ohashi, M Saito, H Honjo, T Toba, Y Nonaka, N Ishiwata
ELECTROCHEMICAL TECHNOLOGY APPLICATIONS IN ELECTRONICS III 99 (34) 241-249 2000
-
Determination of the proton tunneling splitting of tropolone in the ground state by microwave spectroscopy
Peer-reviewed
K Tanaka, H Honjo, T Tanaka, H Kohguchi, Y Ohshima, Y Endo
JOURNAL OF CHEMICAL PHYSICS 110 (4) 1969-1978 1999/01
DOI：
10.1063/1.477863
ISSN：
0021-9606
-
MILLIMETER-WAVE SPECTRUM OF GERMANIUM DICHLORIDE GECL2 - EQUILIBRIUM STRUCTURE AND ANHARMONIC-FORCE FIELD
Peer-reviewed
MJ TSUCHIYA, H HONJOU, K TANAKA, T TANAKA
JOURNAL OF MOLECULAR STRUCTURE 352 407-415 1995/06
ISSN：
0022-2860
