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Tetsuya Suemitsu

Section

New Industry Creation Hatchery Center

Job title

Specially Appointed Professor(Research)

Degree

博士（工学）（早稲田大学）
修士（工学）（早稲田大学）

researchmap

https://researchmap.jp/read0131931

J-GLOBAL ID

200901091215836219

Research History 5

2017/08 - Present

Tohoku University　Professor
2007/04 - 2017/07

Tohoku University　Associate Professor
2006/09 - 2007/03

Tohoku University　Associate Professor
1994/04 - 2006/08

NTT Corporation
2002/01 - 2003/01

Massachusetts Institute of Technology　Visiting Scientist

Committee Memberships 24

Compound Semiconductor Week (CSW 2025)　Chair of High-Frequency Devices Subcommittee

2024/08 - 2025/05
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2025)　TPC Member

2025/01 - 2025/03
IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2021)　TPC Member

2021/01 - 2021/03
European Solid-State Device Research Conference (ESSDERC)　TPC Member

2009/01 - 2019/12
JSAP　Chair of Semiconductor Subcommittee

2014/04 - 2016/03
International Electron Devices Meeting (IEDM)　Member of Technical Program Committee

2004/01 - 2005/12
Device Research Conference (DRC)　Member of Technical Program Committee

2002/12 - 2005/06
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2024)　TPC Member

2024/01 - 2024/03
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2023)　TPC Member

2023/01 - 2023/03
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2022)　TPC Member

2022/01 - 2022/03
Japanese Journal of Applied Physics (JJAP)　Guest Editor

2021/03 - 2021/08
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2021)　TPC Member

2021/01 - 2021/03
Japanese Journal of Applied Physics (JJAP)　Guest Editor

2020/03 - 2020/09
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2020)　Vice Chair of Technical Program Committee

2020/01 - 2020/03
Compound Semiconductor Week 2019 (CSW 2019)　RF Electron Devices Subcommittee Chair

2018/08 - 2019/05
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2019)　TPC Member

2019/01 - 2019/03
Compound Semiconductor Week 2018 (CSW 2018)　Regional Chair for Asia and Australia

2018/01 - 2018/06
Compound Semiconductor Week (CSW 2017)　TPC Member

2016/07 - 2017/06
International Conference on Indium Phosphide and Related Materials (IPRM 2016)　TPC member

2016/01 - 2016/06
JSAP　Member of Annual Meetings Technical Program Committee

2008/01 - 2016/03
Compound Semiconductor Week (CSW 2015)　TPC Member

2015/01 - 2015/07
International Symposium on Compound Semiconductors (ISCS 2012)　Program Committee Member

2012/01 - 2012/08
JSAP　Representative

2008/02 - 2012/02
IEICE　Editor of IEICE Transaction on Electronics

2010/05 - 2011/05

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Professional Memberships 4

IEEE

1995/01 - Present
Japan Society of Applied Physics

1991/05 - Present
Materials Research Society

2012/07 - Present
American Physical Society

1995/07 - Present

Research Areas 1

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Awards 7

IEEE Fellow

2021/01
IEICE ELEX Best Paper Award

2007/09　Institute of Electronics, Information and Communication Engineers
IEICE Best Paper Award

2003/05　Institute of Electronics, Information and Communication Engineers
JSAP Young Scientist Presentation Award

1996/11　Japan Society of Applied Physics
Outstanding Reviewer Award

2021/04　IOP Publishing
ISPlasma 2021 Best Presentation Award

2021/03　ISPlasma
IEICE Electronics Society Activity Testimonial

2012/03　Institute of Electronics, Information and Communication Engineers

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Papers 280

Polarization interface charge model to calculate threshold voltage of AlGaN/GaN HEMTs Peer-reviewed

T. Suemitsu

15th International Conference on Nitride Semiconductors (ICNS-15), Malmö, Sweden, Jul. 6-11, 2025　426　2025/07/10
Impact of polarization charges on threshold voltage and band offset in GaN/AlGaN/GaN heterostructures Peer-reviewed

T. Suemitsu, H. Imabayashi, K. Shiojima

Compound Semiconductor Week (CSW 2025), Banff, Canada, May 27-30, 2025　273　2025/05/29
300-GHz-Band Operation of UTC-PD-Integrated HEMT Photonic Double-Mixer

Tsung-Tse Lin, Shota Horiuchi, Mitsuki Watanabe, Shinnosuke Uchigasaki, Koichi Tamura, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)　1-2　2024/09/01
Publisher: IEEE
DOI： 10.1109/irmmw-thz60956.2024.10697824 　
New polarization interface charge model to calculate carrier concentration of GaN HEMTs Peer-reviewed

Tetsuya Suemitsu

Compound Semiconductor Week (CSW), Lund, Sweden, Jun. 3-6, 2024　P16　2024/06
Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors

Akira Satou, Takumi Negoro, Kenichi Narita, Tomotaka Hosotani, Koichi Tamura, Chao Tang, Tsung-Tse Lin, Paul-Etienne Retaux, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji

Nanophotonics　2023/11/09
Publisher: Walter de Gruyter GmbH
DOI： 10.1515/nanoph-2023-0256 　

ISSN： 2192-8606

eISSN： 2192-8614

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Abstract We experimentally investigated the asymmetric dual-grating-gate plasmonic terahertz (THz) detector based on an InGaAs-channel high-electron-mobility transistor (HEMT) in the gate-readout configuration. Throughout the THz pulse detection measurement on the fabricated device, we discovered a new detection mechanism called the “3D rectification effect” at the positive gate bias application, which is a cooperative effect of the plasmonic nonlinearities in the channel with the diode nonlinearity in the heterobarrier between the InGaAs channel layer and the InAlAs spacer/carrier-supply/barrier layers, resulting in a giant enhancement of the detector responsivity. We also found that an undesired long-tail waveform observed on the temporal pulse photoresponse of the device is due to trapping of carriers to the donor levels in the silicon δ-doped carrier-supply layer when they tunnel through the barrier to the gate and can be eliminated completely by introducing the so-called inverted-HEMT structure. The internal current responsivity and noise-equivalent power are estimated to be 0.49 A/W (with the equivalent voltage responsivity of 4.9 kV/W with a high output impedance of 10 kΩ) and 196 pW/√Hz at 0.8 THz. These results pave the way towards the application of the plasmonic THz detectors to beyond-5G THz wireless communication systems.
Efficient Optical-to-sub-THz Carrier Frequency Down-Conversion by UTC-PD-Integrated HEMT

Tsung-Tse Lin, Mitsuki Watanabe, Dai Nagajima, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

2023 International Topical Meeting on Microwave Photonics (MWP)　1-4　2023/10/15
Publisher: IEEE
DOI： 10.1109/mwp58203.2023.10416637 　
Utilizing High-Intensity Optical Subcarrier Signal for Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer

T.-T. Lin, D. Nakajima, K. Nishimura, M. Watanabe, K. Kasai, M. Yoshida, T. Suemitsu, T. Otsuji, A. Satou

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)　2023/09/17
Publisher: IEEE
DOI： 10.1109/irmmw-thz57677.2023.10299383 　
Introduction of Inverted-HEMT Structure in a Grating-Gate Plasmonic THz Detector for Drastic Improvement of the Pulse Response

K. Narita, T. Negoro, Y. Takida, H. Minamide, T. Suemitsu, T. Otsuji, A. Satou

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)　2023/09/17
Publisher: IEEE
DOI： 10.1109/irmmw-thz57677.2023.10299025 　
Nitride Semiconductors Realizing Sustainable Society Invited Peer-reviewed

Takashi Matsuoka, Tetsuya Suemitsu

2023 IEEE 10th International Workshop on Metrology for AeroSpace (MetroAeroSpace)　358-362　2023/06/19
Publisher: IEEE
DOI： 10.1109/metroaerospace57412.2023.10189994 　
Fast and Sensitive THz Detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET Due to Plasmonic and Photothermoelectric Rectification Effects

Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

2023 Conference on Lasers and Electro-Optics, CLEO 2023　2023
Fast THz Detection by an Asymmetric-Dual-Grating-Gate Graphene-Channel FET Based on Plasmonic and Photothermoelectric Effects

Koichi Tamura, Shinnosuke Uchigasaki, Hironobu Seki, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz　2023

DOI： 10.1109/IRMMW-THz57677.2023.10299381 　

ISSN： 2162-2027

eISSN： 2162-2035
Fast and sensitive THz detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET based on plasmonic and photothermoelectric rectification effects

Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

Proceedings of SPIE - The International Society for Optical Engineering　12683　2023

DOI： 10.1117/12.2676102 　

ISSN： 0277-786X

eISSN： 1996-756X
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal

D. Nakajima, K. Nishimura, M. Watanabe, T. T. Lin, K. Kasai, M. Yoshida, T. Suemitsu, T. Otsuji, A. Satou

Optical Fiber Communication Conference (OFC) 2023　2023
Publisher: Optica Publishing Group
DOI： 10.1364/ofc.2023.m3d.7 　

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We experimentally investigate the effect of high-intensity subcarrier signal input to the UTC-PD-integrated HEMT working for optical-to-wireless carrier frequency down-conversion on enhancement of its double-mixing conversion gain. The fabricated UTC-PD-integrated HEMT demonstrated the linear increase in the conversion gain by up to +7 dB with increasing the subcarrier signal intensity without saturation, and the conversion gain enhancement of +6.8 dB from -51.0 dB to -44.2 dB was achieved.
Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure

Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

APL Photonics　7　(12)　126101-126101　2022/12/01
Publisher: AIP Publishing
DOI： 10.1063/5.0122305 　

eISSN： 2378-0967

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We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featuring an asymmetric dual-grating-gate (ADGG) structure working as a current-driven terahertz detector and experimentally demonstrated a 10 ps-order fast response time and a high responsivity of 0.3 mA/W to 0.95 Terahertz (THz) radiation incidence at room temperature. The ADGG and drain–source bias dependencies of the measured photoresponse showed a clear transition between plasmonic detection under periodic electron density modulation conditions with depleted regions and photothermoelectric (PTE) detection under entirely highly doped conditions without depleted regions. We identified the PTE detection that we observed as a new type of unipolar mechanism in which only electrons or holes contribute to rectifying THz radiation under current-driven conditions. These two detection mechanisms coexisted over a certain wide transcendent range of the applied bias voltages. The temporal photoresponses of the plasmonic and PTE detections were clearly shown to be comparably fast on the order of 10 ps, whereas the maximal photoresponsivity of the PTE detection was almost twice as high as that of the plasmonic detection under applied bias conditions. These results suggest that the ADGG-EG-FET THz detector will be promising for use in 6G- and 7G-class high-speed wireless communication systems.
UTC-PD-Integrated HEMT for Optical-to-MMW/THz Carrier Frequency Down-Conversion: Scaling Rule of Conversion Gain on UTC-PD Mesa Size

D. Nakajima, K. Nishimura, T. Hosotani, K. Kasai, M. Yoshida, T. Suemitsu, T. Otsuji, A. Satou

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)　2022/08/28
Publisher: IEEE
DOI： 10.1109/irmmw-thz50927.2022.9895988 　
Pulse Response of Asymmetric Dual-Grating-Gate HEMT Plasmonic THz Detector

K. Narita, T. Negoro, Y. Takida, H. Ito, H. Minamide, T. Suemitsu, T. Otsuji, A. Satou

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)　2022/08/28
Publisher: IEEE
DOI： 10.1109/irmmw-thz50927.2022.9895931 　
Graphene-based plasmonic metamaterial for terahertz laser transistors

Taiichi Otsuji, Stephane Albon Boubanga-Tombet, Akira Satou, Deepika Yadav, Hirokazu Fukidome, Takayuki Watanabe, Tetsuya Suemitsu, Alexander A. Dubinov, Vyacheslav V. Popov, Wojciech Knap, Valentin Kachorovskii, Koichi Narahara, Maxim Ryzhii, Vladimir Mitin, Michael S. Shur, Victor Ryzhii

Nanophotonics　11　(9)　1677-1696　2022/05/11
Publisher: Walter de Gruyter GmbH
DOI： 10.1515/nanoph-2021-0651 　

eISSN： 2192-8614

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Abstract This paper reviews recent advances in the research and development of graphene-based plasmonic metamaterials for terahertz (THz) laser transistors. The authors’ theoretical discovery on THz laser transistors in 2007 was realized as a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) in 2018, demonstrating ∼0.1 µW single-mode emission at 5.2 THz and ∼80 µW amplified spontaneous 1–7.6 THz emission at 100 K. To realize room-temperature, dry-cell-battery operating intense THz lasing with fast direct modulation, various approaches based on graphene plasmonic metamaterials are investigated and introduced as real device implementations, including (i) replacement of the laser photonic cavity with plasmonic cavity enormously improving the THz photon field confinement with larger gain overlapping, (ii) introduction of THz amplification of stimulated emission via current-driven graphene Dirac plasmons (GDPs), and (iii) controlling the parity and time-reversal symmetry of GDPs enabling ultrafast direct gain-switch modulation. Possible real device structures and design constraints are discussed and addressed toward coherent light sources applicable to future 6G- and 7G-class THz wireless communication systems.
Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors Peer-reviewed

Kiattiwut Prasertsuk, Tetsuya Suemitsu, Takashi Matsuoka

Japanese Journal of Applied Physics　61　(SA)　SA1006-SA1006　2022/01/01
Publisher: IOP Publishing
DOI： 10.35848/1347-4065/ac2214 　

ISSN： 0021-4922

eISSN： 1347-4065

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<title>Abstract</title> Reverse bias annealing (RBA) is applied to N-polar GaN high electron mobility transistors (HEMTs) to improve the quality of the gate stack interface. As demonstrated for Ga-polar HEMTs, RBA improves the stability of the gate stack interface. However, the decrease in the maximum drain current density is observed as a unique phenomenon for the N-polar HEMTs. The calculation of the band profile suggests that in the N-polar HEMTs the electrons injected from the gate electrode by the reverse bias accumulate at the gate stack interface in the extrinsic gate region. This promotes the electron trapping in the gate stack, which results in an increase in the source access resistance by the virtual gate phenomenon. In the Ga-polar HEMTs, the electrons tend to accumulate at the AlGaN/GaN interface rather than the gate stack interface, which gives less chance of the virtual gate phenomenon.
UTC-PD-integrated HEMT double-mixer for optical to MMW/THz carrier frequency down-conversion

A. Satou, D. Nakajima, K. Nishimura, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji

International Conference Micro- and Nanoelectronics (ICMNE-2021)　O2-02　2021/10
Optical-to-wireless carrier frequency down-conversion by UTC-PD-integrated HEMT: Dependece of conversion gain on UTC-PD mesa size Peer-reviewed

K. Nishimura, T. Hosotani, D. Nakajima, T. Suemitsu, K. Iwatsuki, T. Otsuji, A. Satou

Conf. on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (EQEC 2021)　CI-3.5 THU　2021/06
Impact of polarization-induced charges on Schottky barrier height of polar GaN Peer-reviewed

T. Suemitsu, I. Makabe

13th International Symposium on Advanced Plasma Sciene and its Applications for Nitrides and Nanomaterials (ISPlasma), Mar. 7-11　09pD12O　2021/03
Evidence of carrier trapping at extrinsic gate region in N-polar GaN/AlGaN MIS HEMTs Peer-reviewed

K. Prasertsuk, T. Suemitsu, T. Matsuoka

13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma), Mar. 7-11　10aD05O　2021/03
Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing Peer-reviewed

Akira Satou, Yuya Omori, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji

Journal of Lightwave Technology　39　(10)　3341-3349　2021/02
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI： 10.1109/jlt.2021.3060795 　

ISSN： 0733-8724

eISSN： 1558-2213
Effective Schottky barrier height model for N-polar and Ga-polar GaN by polarization-induced surface charges with finite thickness International-journal Peer-reviewed

Tetsuya Suemitsu, Isao Makabe

Phys. Status Solidi B　257　(4)　1900528-1-1900528-6　2020/01

DOI： 10.1002/pssb.201900528 　
Optimum frequency in a millimeter-wave wireless power transfer system for wearable terminals using InGaAs HEMTs Peer-reviewed

M. Hanaoka, Y. Koike, Y. Umeda, T. Suemitsu

13th Topical Workshop on Heterostructure Microelectronics (TWHM), Toyama, Japan, Aug. 26-29　6-5　2019/08
Photonic double-mixing by UTC-PD-integrated-HEMT for optical to MMW carrier frequency down-conversion Peer-reviewed

K. Nishimura, Y. Omori, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji, A. Satou

13th Topical Workshop on Heterostructure Microelectronics (TWHM), Toyama, Japan, Aug. 26-29　6-2　2019/08
Effective Schottky barrier height model for Ga- and N-polar GaN by polarization-induced surface charges with finite depth Peer-reviewed

T. Suemitsu, I. Makabe

13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, WA, USA, Jul. 7-12　271-LP01.05　2019/07
Graphene-based 2D-heterostructures for terahertz lasers and amplifiers

D. Yadav, S. Boubanga-Tombet, A. Satou, T. Tamamushi, T. Watanabe, T. Suemitsu, H. Fukidome, M. Suemitsu, A. A. Dubinov, V. V. Popov, M. Ryzhii, V. Mitin, M. S. Shur, V. Ryzhii, T. Otsuji

Proceedings of SPIE - The International Society for Optical Engineering　10917　2019

DOI： 10.1117/12.2516494 　

ISSN： 0277-786X

eISSN： 1996-756X
Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy Peer-reviewed

Shiojima, K., Suemitsu, T., Ozaki, T., Samukawa, S.

Japanese Journal of Applied Physics　58　(SC)　SCCD13-1-SCCD13-5　2019

DOI： 10.7567/1347-4065/ab106d 　
Electrical characteristic of AlGaN/GaN high-electron-mobility transistors with recess gate structure Peer-reviewed

Shrestha, N.M., Li, Y., Suemitsu, T., Samukawa, S.

IEEE Transactions on Electron Devices　66　(4)　1694-1698　2019

DOI： 10.1109/TED.2019.2901719 　
Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs Peer-reviewed

T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka

2018 MRS Fall Meeting & Exhibit, Boston, MA, USA, Nov. 25-30　EP08.08.04　2018/12
N-polar GaN/AlGaN inversed high electron mobility transistors Invited

T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka

4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4), Sendai, Japan, Nov. 19-20　ED-III-4　2018/11
[Invited Talk] Advanced plasma process for GaN high electron mobility transistors Invited

Tetsuya Suemitsu

International Workshop on Plasma and Bionano Devices, Kanazawa, Japan, Nov. 14　2018/11
Three dimensional and non-destructive investigation of relation between reverse leakage current and threading dislocation in vertical GaN Schottky barrier diodes Peer-reviewed

T. Fujita, T. Tanikawa, H. Fukushima, S. Usami, A. Tanaka, T. Suemitsu, T. Matsuoka

International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, Nov. 12-16　CR10-3　2018/11
Mapping of neutral-beam etching induced damages on GaN surfaces using scanning internal photoemission microscopy Peer-reviewed

K. Shiojima, T. Suemitsu, T. Ozaki, S. Samukawa

International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, Nov. 12-16　ThP-ED-8　2018/11
Coupling of 2D plasmons in grating-gate plasmonic THz detector to THz wave with lateral polarization Peer-reviewed

M. Suzuki, T. Hosotani, T. Otsuji, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, A. Satou

43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)　Tu-A2-1a-2　2018/09
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)

M. Suzuki, T. Hosotani, T. Otsuji, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, A. Satou

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Kitakyushu, Japan, Jul. 2-4, 2018　A2-4　2018/07
Reverse bias annealing effects in N-polar GaN/AlGaN/GaN HEMTs Peer-reviewed

T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka

Compound Semiconductor Week, Boston, MA, USA, May 29-Jun. 1, 2018　705-706　2018/05
N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching Peer-reviewed

Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka

Applied Physics Express　11　(1)　015503_1-4　2018/01/01
Publisher: Japan Society of Applied Physics
DOI： 10.7567/APEX.11.015503 　

ISSN： 1882-0786 1882-0778

eISSN： 1882-0786
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse Peer-reviewed

Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Yoh Watamura, Seiji Samukawa, Taiichi Otsuji, Tetsuya Suemitsu

SOLID-STATE ELECTRONICS　137　1-5　2017/11

DOI： 10.1016/j.sse.2017.07.015 　

ISSN： 0038-1101

eISSN： 1879-2405
High-speed pulse response of asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic THz detection International-journal Peer-reviewed

T. Hosotani, F. Kasuya, M. Suzuki, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, A. Satou

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz　1　(1)　IV-O2　2017/10/12
Publisher: IEEE Computer Society
DOI： 10.1109/IRMMW-THz.2017.8066947 　

ISSN： 2162-2035 2162-2027
In-situ mapping of degradation of AlGaN/GaN MIS-HEMTs using video-mode scanning internal photoemission microscopy Peer-reviewed

K. Shiojima, S. Murase, Y. Watamura, T. Suemitsu

Int. Conf. on Solid-State Devices and Materials (SSDM), Sendai, Japan, Sep. 19-22　PS-6-14　2017/09/21
Terahertz light emission and lasing in graphene-based vdW 2D heterostructures Invited Peer-reviewed

T. Otsuji

RPGR2017: Int. Conf. Recent Progress in Graphene and 2D Materials Research, Singapore, Sept. 19-22, 2017.　1　(1)　WD-I2-1-2　2017/09

DOI： 10.1117/12.918662 　
Terahertz light emission and lasing in graphene-based heterostructure 2D material systems -theory and experiments Invited Peer-reviewed

T. Otsuji

NANOP 2017: International Conference on Nanophotonics and Micro/Nano Optics Abstract Book, Barcelona, Spain, Sept. 13-15, 2017.　1　(1)　115-116　2017/09
Frequency down-conversion from optical data signal to MMW IF data signal using InP-HEMT Peer-reviewed

Y. Omori, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji, A. Satou

The 24th Congress of the International Commissions for Optics Dig., Keio-Plaza Hotel, Tokyo, 21-25 Aug. 2017.　1　(1)　Tu2G-05-1-2　2017/08
Effective electron velocity in InGaAs-HEMTs with slant field plates Peer-reviewed

T. Hosotani, T. Otsuji, T. Suemitsu

Compound Semiconductor Week, Berlin, Germany, May 14-18　A5-5　2017/05/16
N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE Peer-reviewed

K. Prasertsuk, T. Tanikawa, T. Kimura, T. Suemitsu, T. Matsuoka

Compound Semiconductor Week, Berlin, Germany, May 14-18　P1-43　2017/05/14
Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing Peer-reviewed

Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu

Japanese Journal of Applied Physics　56　(6)　06GF09-1-06GF09-5　2017/05/09
Publisher: Institute of Physics
DOI： 10.7567/JJAP.56.06GF09 　

ISSN： 0021-4922

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We propose a damage-free formation method for high-quality gate dielectrics on epitaxial graphene (EG), which involves solution-based Al<inf>2</inf>O<inf>3</inf>coating combined with microwave-assisted annealing (MW-sol-Al<inf>2</inf>O<inf>3</inf>). This method substantially preserves the pristine properties of EG with minimized hole doping and strain induction. The MW-sol-Al<inf>2</inf>O<inf>3</inf>showed a surface roughness of ∼0.237 nm and a dielectric constant of 7.5. A leakage current of 8.7 × 10⁻⁶A/cm², which is 3 orders of magnitude smaller than that of natural Al<inf>2</inf>O<inf>3</inf>at the same electric field, was obtained. These excellent MW-sol-Al<inf>2</inf>O<inf>3</inf>properties are ascribed to the effective elimination of hydroxyl- and carboxyl-related components from the film by microwave-assisted annealing.
Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection Peer-reviewed

T. Hosotani, F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, A. Satou

IEEE IMS: 2017 IEEE Int. Microwave Symposium Dig., Honolulu, Hawaii, USA, June 4-9, 2017.　1　(1)　578-581　2017/05

DOI： 10.1109/MWSYM.2017.8058632 　
Neutral beam etching for device isolation in AlGaN/GaN HEMTs Peer-reviewed

Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Alex Guo, Shireen Warnock, Jesus A. del Alamo, Seiji Samukawa, Taiichi Otsuji, Tetsuya Suemitsu

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　214　(3)　1600617_1-5　2017/03

DOI： 10.1002/pssa.201600617 　

ISSN： 1862-6300

eISSN： 1862-6319
Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor Peer-reviewed

G. Tamamushi, T. Watanabe, J. Mitsushio, A. A. Dubinov, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, T. Otsuji

QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV　10111　2017

DOI： 10.1117/12.2249983 　

ISSN： 0277-786X
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse Peer-reviewed

F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, S. Samukawa, T. Otsuji, T. Suemitsu

International Semiconductor Device Research Symposium (ISDRS), Bethesda, MD, USA, Dec. 7-9　FP1-03　2016/12/09
Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates Peer-reviewed

Tomotaka Hosotani, Taiichi Otsuji, Tetsuya Suemitsu

APPLIED PHYSICS EXPRESS　9　(11)　114101_1-3　2016/11

DOI： 10.7567/APEX.9.114101 　

ISSN： 1882-0778

eISSN： 1882-0786
[Invited Talk] Progress in device and process technology for GaN HEMTs Invited Peer-reviewed

Tetsuya Suemitsu

2016 Euroepan Materials Research Society Fall Meeting, Warsaw, Poland, Sep. 19-22　G.6.2　2016/09/20
Solution-processed Al₂O₃ gate dielectrics for graphene field-effect transistors Peer-reviewed

Goon-Ho Park, Kwan-Soo Kim, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu

Japanese Journal of Applied Physics　55　(9)　091502-1-091502-5　2016/08/26

DOI： 10.7567/JJAP.55.091502 　

ISSN： 0021-4922

eISSN： 1347-4065
Cross sectional observation of slant field plates integrated to InAlAs/InGaAs HEMTs Peer-reviewed

T. Hosotani, T. Otsuji, T. Suemitsu

Lester Eastman Conference on High Performance Devices, Bethlehem, PA, USA, Aug. 2-4　32-33　2016/08/02
A fitting model for extraction of intrinsic transistor parameters in graphene FETs Peer-reviewed

J. Mitsushio, G. Tamamushi, K. Sugawara, A. Satou, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., Hakodake, Hokkaido, Japan　1　(1)　A7-5-1-5　2016/07/06
Sub-THz Photonic Double-Mixing Conversion Using Transistors Peer-reviewed

A. Satou, K. Sugawara, G. Tamamushi, T. Watanabe, A. Dobroiu, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, T. Otsuji

AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., Hakodake, Hokkaido, Japan　1　(1)　A5-5-1-6　2016/07/05
Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP - and Graphene-Based Transistors Peer-reviewed

Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Hussin Mastura, Adrian Dobroju, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun-Ichi Kani, Jun Terada, Taiichi Otsuji

Journal of Lightwave Technology　34　(8)　2011-2019　2016/04/15

DOI： 10.1109/JLT.2015.2505146 　

ISSN： 0733-8724
Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems Invited Peer-reviewed

Taiichi Otsuji, Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun-ichi Kani, Jun Terada

SPIE Photonics West, OPTO 2016, Conference 9772 on Broadband Access Communication Technologies X, San Francisco, CA, USA, Feb. 16, 2016. (invited); Proc. SPIE　9772　(1)　977204-1-977204-9　2016/02/16

DOI： 10.1117/12.2209211 　
Nanostructured Asymmetric Dual-Grating-Gate Plasmonic THz Detectors: Enhancement of External Coupling Efficiency by Array Configuration and Silicon-Lens Integration Peer-reviewed

F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, A. Satou

2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)　116-118　2016
5.2-THz Single-Mode Lasing in Current-Injection Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor Invited Peer-reviewed

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)　3　(3)　40-40　2016

DOI： 10.4172/2469-410X.C1.007 　

ISSN： 2162-2027
Array Configuration and Silicon-Lens Integration of Asymmetric Dual-Grating-Gate Plasmonic THz Detectors Peer-reviewed

F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, Y. Takida, H. Ito, H. Minamide, A. Satou

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)　1　(1)　T4C.6-1-2　2016

DOI： 10.1109/IRMMW-THz.2016.7758755 　

ISSN： 2162-2027
Single-Mode Terahertz Emission from Current-Injection Graphene-Channel Transistor under Population Inversion Peer-reviewed

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Junki Mitsushio, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)　1　(1)　225-226　2016

DOI： 10.1109/DRC.2016.7548491 　
Current-Injection Terahertz Lasing in Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor Invited Peer-reviewed

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)　1　(1)　18-18　2016

ISSN： 2160-9020
A new process approach for slant field plates in GaN-based high-electron-mobility transistors Invited Peer-reviewed

Tetsuya Suemitsu, Kengo Kobayashi, Shinya Hatakeyama, Nana Yasukawa, Tomohiro Yoshida, Taiichi Otsuji, Daniel Piedra, Tomas Palacios

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(1)　01AD02_1-6　2016/01

DOI： 10.7567/JJAP.55.01AD02 　

ISSN： 0021-4922

eISSN： 1347-4065
Gate delay analysis in two-step recess gate InGaAs-HEMTs with slant field plates Peer-reviewed

Tomotaka Hosotani, Taiichi Otsuji, Tetsuya Suemitsu

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)　TuD4-5　2016
MOVPE Growth of N-polar GaN/AlxGa1-xN/GaN Heterostructure on Small Off-cut Substrate for Flat Interface Peer-reviewed

K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)　WeB1-3　2016

DOI： 10.1109/ICIPRM.2016.7528837 　
The effect of neutral beam etching on device isolation in AlGaN/GaN HEMTs Peer-reviewed

Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Alex Guo, Shireen Warnock, Jesus A. del Alamo, Seiji Samukawa, Taiichi Otsuji, Tetsuya Suemitsu

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)　WeB2-4　2016
Photonic frequency conversion using graphene FETs for future fully coherent access network

Kenta Sugawara, Tetsuya Kawasaki, Mastura Binti Hussin, Gen Tamamushi, Maki Suemitsu, Hirokazu Fukidome, Katsumi Iwatsuki, Tetsuya Suemitsu, Victor Ryzhii, Taiichi Otsuji, Jun Ichi Kani, Jun Terada, Shigeru Kuwano

2015 Opto-Electronics and Communications Conference, OECC 2015　2015/11/30

DOI： 10.1109/OECC.2015.7340108 　
High Performance Self-Aligned Graphene Transistors using Contamination-Free Process Peer-reviewed

Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

MNC 2015　2015/11/10
Broadband characteristics of ultrahigh responsivity of asymmetric dual-grating-gate plasmonic terahertz detectors Peer-reviewed

F. Kasuya, T. Kawasaki, S. Hatakeyama, S. Boubanga Tombet, T. Suemitsu, T. Otsuji, G. Ducournau, D. Coquillat, W. Knap, Y. Takida, H. Ito, H. Minamide, D.V. Fateev, V.V. Popov, Y.M. Meziani, A. Satou

IRMMW-THz 2015: the 40th Int. Conf. on Infrared, Millimeter and Terahertz Waves Dig., Hong Kong, China, 27 Aug. 2016.　1　(1)　WS-45-1-WS-45-2　2015/08/26

DOI： 10.1109/IRMMW-THz.2015.7327926 　
InP and GaN high electron mobility transistors for millimeter-wave applications

Tetsuya Suemitsu

IEICE ELECTRONICS EXPRESS　12　(13)　20152005_1-12　2015/07

DOI： 10.1587/elex.12.20152005 　

ISSN： 1349-2543
65-nm-gate InGaAs-HEMTs with slant field plates Peer-reviewed

T. Yoshida, S. Hatakeyama, N. Yasukawa, T. Otsuji, T. Suemitsu

27th Int. Conf. on Indium Phosphide and Related Materials (IPRM), Santa Barbara, CA, USA, Jun. 28-Jul. 2　94-95　2015/06/29
Drain depletion length in InAlN/GaN MIS-HEMTs with slant field plates Peer-reviewed

N. Yasukawa, S. Hatakeyama, T. Yoshida, T. Kimura, T. Matsuoka, T. Otsuji, T. Suemitsu

42nd Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, CA, USA, Jun. 28-Jul. 2　68-69　2015/06/29
High carrier mobility graphene-channel FET using SiN gate stack Peer-reviewed

G. Tamamushi, K. Sugawara, M. B. Hussin, T. Suemitsu, R. Suto, H. Fukidome, M. Suemitsu, T. Otsuji

42nd Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, CA, USA, Jun. 28-Jul. 2　189-190　2015/06/29
InGaAs channel HEMTs for photonic frequency double mixing conversion over the sub-THz band Peer-reviewed

T. Kawasaki, K. Sugawara, A. Dobroiu, H. Wako, T. Watanabe, T. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, T. Otsuji

IMS: Int. Microwave Symposium, Phoenix, AZ, USA, 17-22 May 2015.　1　(1)　1-4　2015/05/20

DOI： 10.1109/MWSYM.2015.7166896 　
[Invited Talk] A new process approach for slant field plates in GaN-based HEMTs Invited Peer-reviewed

T. Suemitsu, K. Kobayashi, S. Hatakeyama, N. Yasukawa, T. Yoshida, T. Otsuji, D. Piedra, T. Palacios

7th International Symposium on Advanced Plasma Science and its Applications for Nitride and Nanomaterials (ISPlasma), Nagoya, Japan, Mar. 26-31　B2-I-02　2015/03/29
Geometrical dependence of ultrahigh responsivity and its broadband characteristics of InP-based asymmetric dual-grating-gate high-electron-mobility transistors Peer-reviewed

A. Satou, T. Kawasaki, S. Hatakeyama, S. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, D.V. Fateev, V.V. Popov, Y.M. Meziahi, T. Otsuji

OTST: Int. Conf. on Optical Teraherz Science and Technology, PS2-9, San Diego, CA, USA, 8-13 March 2015.　PS2　9　2015/03/10
Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT Peer-reviewed

T. Watanabe, T. Kawasaki, A. Satou, S.A. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, W. Knap, H. Minamide, H. Ito, Y.M. Meziani, V.V. Popov, T. Otsuji

SPIE Photonics West, Paper No. 9362-13, San Francisco, CA, USA, 11 Feb. 2015; Proc. SPIE Vol. 9362, 2015. (in press.)　9362　(1)　2015/02/11

DOI： 10.1117/12.2079184 　
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band Peer-reviewed

Tetsuya Kawasaki, Kenta Sugawara, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Youichi Fukada, Jun-ichi Kani, Jun Terada, Naoto Yoshimoto, Kenji Kawahara, Hiroki Ago, Taiichi Otsuji

SOLID-STATE ELECTRONICS　103　216-221　2015/01

DOI： 10.1016/j.sse.2014.07.009 　

ISSN： 0038-1101

eISSN： 1879-2405
Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network Peer-reviewed

Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki, Shigeru

ECOC 2015　115　(407(OCS2015 88-99))　2015

DOI： 10.1109/ECOC.2015.7341625 　

ISSN： 0913-5685
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs Peer-reviewed

Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu

SOLID-STATE ELECTRONICS　102　93-97　2014/12

DOI： 10.1016/j.sse.2014.06.005 　

ISSN： 0038-1101

eISSN： 1879-2405
Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN Peer-reviewed

Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Daniel Piedra, Tomas Palacios, Taiichi Otsuji, Tetsuya Suemitsu

SOLID-STATE ELECTRONICS　101　63-69　2014/11

DOI： 10.1016/j.sse.2014.06.022 　

ISSN： 0038-1101

eISSN： 1879-2405
Progresses and future prospects in nitride semiconductors: Crystal growth and device applications Peer-reviewed

Takashi Matsuoka, Akio Yamamoto, Kazuyuki Tadatomo, Tetsuya Suemitsu, Yoshihiro Ishitani

Japanese Journal of Applied Physics　53　(10)　2014/10/01
Publisher: Japan Society of Applied Physics
DOI： 10.7567/JJAP.53.100200 　

ISSN： 1347-4065 0021-4922
An improved self-aligned ohmic-contact process for graphene-channel field-effect transistors Peer-reviewed

M. Hussin, K. Sugawara, T. Suemitsu, T. Otsuji

75th JSAP Fall Meeting, Sapporo, Sep. 16-20　17p-C3-5　2014/09/17
Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates Peer-reviewed

Kengo Kobayashi, Shinya Hatakeyama, Tonnohiro Yoshida, Yuhei Yabe, Daniel Piedra, Tomas Palacios, Taiichi Otsuji, Tetsuya Suemitsu

APPLIED PHYSICS EXPRESS　7　(9)　096501_1-4　2014/09

DOI： 10.7567/APEX.7.096501 　

ISSN： 1882-0778

eISSN： 1882-0786
Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Peer-reviewed

Y. Kurita, G. Ducournau, D. Coquillat, A. Satou, K. Kobayashi, S. Boubanga Tombet, Y. M. Meziani, V. V. Popov, W. Knap, T. Suemitsu, T. Otsuji

APPLIED PHYSICS LETTERS　104　(25)　251114　2014/06

DOI： 10.1063/1.4885499 　

ISSN： 0003-6951

eISSN： 1077-3118
Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector Peer-reviewed

S. Boubanga-Tombet, Y. Tanimoto, A. Satou, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, D. V. Fateev, V. V. Popov, T. Otsuji

APPLIED PHYSICS LETTERS　104　(26)　262104　2014/06

DOI： 10.1063/1.4886763 　

ISSN： 0003-6951

eISSN： 1077-3118
RF characteristics of AlGaN/GaN HEMTs with slant field plates Peer-reviewed

S. Hatakeyama, K. Kobayashi, T. Yoshida, T. Otsuji, T. Suemitsu

41st Int. Symp. on Compound Semiconductors, Montpellier, France, May 11-15　Th-C1-6　2014/05/15
Detection of Terahertz and Mid-Infrared radiations by InP-Based Asymmetric Dual-Grating-Gate HEMTs Peer-reviewed

D. Coquillat, P. Zagrajek, N. Dyakonova, K. Chrzanowski, J. Marczewski, Y. Kurita, A. Satou, K. Kobayashi, S. Boubanga Tombet, V. V. Popov, T. Suemitsu, T. Otsuji, W. Knap

2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)　1　(1)　1-2　2014

DOI： 10.1109/IRMMW-THz.2014.6956522 　

ISSN： 2162-2027
Impact of Drain Conductance in InGaAs-HEMTs Operated in a Class-F Amplifier Peer-reviewed

Tomohiro Yoshida, Taiichi Otsuji, Tetsuya Suemitsu, Masashi Oyama, Kunihiko Watanabe, Yohtaro Umeda

2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC)　36-37　2014

DOI： 10.1109/LEC.2014.6951560 　

ISSN： 1550-4905
Solution-processed Al2O3 for gate dielectrics in the Top-Gated Graphene Field Effect Transistors

G.-H. Park, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu

Abstract book of MNC2013　7P-7-118L-7P-7-118L　2013/11/05
Terahertz emission and detection using two dimensional plasmons in semiconductor nano-heterostructures for sensing applications Peer-reviewed

T. Otsuji, T. Watanabe, S. Boubanga Tombet, T. Suemitsu, V. Popov, W. Knap

Proc. IEEE Sensors Conf　2013/11/04

DOI： 10.1109/ICSENS.2013.6688150 　
Ultrahigh sensitive non-resonant and resonant terahertz detection by asymmetric dual-grating gate HEMTs Peer-reviewed

Y. Kurita, G. Ducournau, D. Coquillat, K. Kobayashi, A. Satou, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, T. Otsuji

SSDM: International Conf. on Solid State Devices and Materials　2013/09/26
Terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with a photonic vertical cavity Peer-reviewed

Watanabe, T, Kurita, Y, Satou, A, Suemitsu, T, Knap, W, Popov, V.V, Otsuji, T

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Mainz, Germany　1　(1)　1-2　2013/09/05

DOI： 10.1109/IRMMW-THz.2013.6665894 　
Fabrication of slant field plates for AlGaN/GaN HEMTs by multi-layer SiCN Peer-reviewed

Shinya Hatakeyama, Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Tetsuya Suemitsu

10th Topical Workshop on Heterostructure Microelectronics (TWHM), Hakodate, Japan, Sep. 2-5　129-130　2013/09/04
Fabrication of InGaAs-HEMTs with sub-100-nm T-gates by multi-layer SiCN molds Peer-reviewed

Tomohiro Yoshida, Kengo Kobayashi, Shinya Hatakeyama, Taiichi Otsuji, Tetsuya Suemitsu

10th Topical Workshop on Heterostructure Microelectronics (TWHM), Hakodate, Japan, Sep. 2-5　17-18　2013/09/02
Site-Selective Epitaxy of Graphene on Si Wafers Invited Peer-reviewed

Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu

PROCEEDINGS OF THE IEEE　101　(7)　1557-1566　2013/07

DOI： 10.1109/JPROC.2013.2259131 　

ISSN： 0018-9219

eISSN： 1558-2256
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique Peer-reviewed

Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

PROCEEDINGS OF THE IEEE　101　(7)　1603-1608　2013/07

DOI： 10.1109/JPROC.2013.2258651 　

ISSN： 0018-9219
Plasmonic terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with highly asymmetric resonant cavities Peer-reviewed

T. Watanabe, A. Satou, T. Suemitsu, W. Knap, V. V. Popov, T. Otsuji

40th Int. Symp. on Compound Semiconductors, Kobe, Japan, May 19-23　TuC4-5　2013/05/21
AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks Peer-reviewed

K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, T. Suemitsu

Physica Status Solidi (C) Current Topics in Solid State Physics　10　(5)　790-793　2013/05

DOI： 10.1002/pssc.201200609 　

ISSN： 1862-6351 1610-1642
Asymmetric Dual-Grating Gate InGaAs/InAlAs/InP HEMTs for Ultrafast and Ultrahigh Sensitive Terahertz Detection Peer-reviewed

Taiichi Otsuji, Takayuki Watanabe, Stephane Boubanga-Tombet, Tetsuya Suemitsu, Dominique Coquillat, Wojciech Knap, Denis Fateev, Vyacheslav Popov

2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)　2013

ISSN： 1092-8669
Dielectric-tuned Diamondlike Carbon Materials for an Ultrahigh-speed Self-aligned Graphene Channel Field Effect Transistor Peer-reviewed

Takabayashi, Susumu, Yang, Meng, Ogawa, Shuichi, Takakuwa, Yuji, Suemitsu, Tetsuya, Otsuji, Taiichi

ADAPTIVE, ACTIVE AND MULTIFUNCTIONAL SMART MATERIALS SYSTEMS　77　270-+　2013

DOI： 10.4028/www.scientific.net/AST.77.270 　

ISSN： 1662-0356
Dielectric-tuned diamondlike carbon materials for high-performance self-aligned graphene-channel field effect transistors Peer-reviewed

Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji

Materials Research Society Symposium Proceedings　1451　185-190　2013

DOI： 10.1557/opl.2012.960 　

ISSN： 0272-9172
InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds Peer-reviewed

Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5　10　(5)　773-776　2013

DOI： 10.1002/pssc.201200610 　

ISSN： 1862-6351
Plasmonic Terahertz Monochromatic Coherent Emission from an Asymmetric Chirped Dual-Grating-Gate InP-HEMT with a Photonic Vertical Cavity Peer-reviewed

Takayuki Watanabe, Yuki Kurita, Akira Satou, Tetsuya Suemitsu, Wojciech Knap, Viacheslav V. Popov, Taiichi Otsuji

2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)　129-+　2013

DOI： 10.1109/DRC.2013.6633827 　

ISSN： 1548-3770
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs Peer-reviewed

Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu

European Solid-State Device Research Conference　115-118　2013
Publisher: IEEE Computer Society
DOI： 10.1109/ESSDERC.2013.6818832 　

ISSN： 1930-8876
Graphene-Channel FETs for Photonic Frequency Double-Mixing Conversion over the Sub-THz Band Peer-reviewed

Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Jun-ichi Kani, Jun Terada, Naoto Yoshimoto

2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)　318-321　2013

DOI： 10.1016/j.sse.2014.07.009 　

ISSN： 1930-8876
[Invited] Graphene field effect transistors Invited

Tetsuya Suemitsu

5th Int. Symp. on Atomically Controlled Fabrication Technology, Osaka, Japan, Oct. 22-24　4-5　2012/10/22
AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks Peer-reviewed

K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, T. Suemitsu

39th Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, USA, Aug. 27-30　Mo-1B.3　2012/08/27
InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds Peer-reviewed

Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu

39th Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, USA, Aug. 27-30　Mo-P.35　2012/08/27
Nonresonant Detection of Terahertz Radiation in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems at Room Temperature Peer-reviewed

A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, W. Knap

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY　12　(8)　6737-6740　2012/08

DOI： 10.1166/jnn.2012.4575 　

ISSN： 1533-4880
Ultrahigh-sensitive plasmonic terahertz detectors based on an asymmetric dual-grating gate HEMT structure Invited Peer-reviewed

T. Otsuji, S. Boubanga Tombet, T. Watanabe, Y. Tanimoto, A. Satou, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, Y.M. Meziani, D. Coquillat, W. Knap, V. Popov, D.V. Fatee

Proc. of SPIE (SPIE Defense Security and Sensing, Conference 8363: Terahertz Physics, Devices, and Systems VI: Advance Applications in Industry and Defense, Paper 8363-24, Baltimore, Maryland, USA, April 23-27, 2012.)　8363　(1)　83630P-1-8　2012/04/24

DOI： 10.1117/12.919978 　
[Invited] Reliability and degradation phenomena in InP-based HEMTs Invited

Tetsuya Suemitsu

MRS Spring Meeting, San Francisco, USA, Apr. 9-13　G8.1　2012/04/12
Control of electronic and structural properties of epitaxial graphene on 3C-SiC/Si and its device applications Peer-reviewed

H. Fukidome, M. Kotsugi, T. Ohkouchi, A. Yoshigoe, Y. Teraoka, Y. Enta, T. Kinoshita, T. Suemitsu, T. Otsuji, M. Suemitsu

MRS Spring Meeting, San Francisco, USA, Apr. 9-13　EE8.16　2012/04/12
Carbonaceous field effect transistor with graphene and diamondlike carbon Peer-reviewed

Takabayashi, Susumu, Ogawa, Shuichi, Takakuwa, Yuji, Kang, Hyun-Chul, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Maki, Suemitsu, Tetsuya, Otsuji, Taiichi

DIAMOND AND RELATED MATERIALS　22　118-123　2012/02

DOI： 10.1016/j.diamond.2011.12.037 　

ISSN： 0925-9635

eISSN： 1879-0062
Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection Peer-reviewed

Stephane Boubanga-Tombet, Yudai Tanimoto, Takayuki Watanabe, Tetsuya Suemitsu, Wang Yuye, Hiroaki Minamide, Hiromasa Ito, Vyacheslav Popov, T. Otsuji

Device Research Conference - Conference Digest, DRC　169-170　2012

DOI： 10.1109/DRC.2012.6256927 　

ISSN： 1548-3770
Control of the dielectric constant and remote carrier injection of diamondlike carbon films

Takabayashi Susumu, Yang Meng, Hayashi Hiroyuki, Eto Takanori, Ogawa Shuichi, Takakuwa Yuji, Suemitsu Tetsuya, Otsuji Taiichi

Abstract of annual meeting of the Surface Science of Japan　32　270-270　2012
Publisher: The Surface Science Society of Japan
DOI： 10.14886/sssj2008.32.0_270 　
InGaAs HEMTs with T-gate electrodes fabricated using HMDS SiN mold Peer-reviewed

Tomohiro Yoshida, Keisuke Akagawa, Taiichi Otsuji, Tetsuya Suemitsu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2　9　(2)　354-356　2012

DOI： 10.1002/pssc.201100272 　

ISSN： 1862-6351
Asymmetric Dual-Grating Gate InGaAs/InAlAs/InP HEMTs for Ultrafast and Ultrahigh Sensitive Terahertz Detection Invited

Stephane Boubanga-Tombet, Yudai Tanimoto, Takayuki Watanabe, Tetsuya Suemitsu, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Vyacheslav Popov, Taiichi Otsuj

2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)　ThD1-1　2012

DOI： 10.1109/ICIPRM.2013.6562639 　

ISSN： 2162-2027
[Invited] Epitaxial graphene on silicon substrates Invited

Tetsuya Suemitsu

1st Annual World Congress of Nano-S&T, Dalian, China, Oct. 23-26　399　2011/10/25
Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications Peer-reviewed

Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　070107　2011/07

DOI： 10.1143/JJAP.50.070107 　

ISSN： 0021-4922

eISSN： 1347-4065
Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation Peer-reviewed

Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　070111　2011/07

DOI： 10.1143/JJAP.50.070111 　

ISSN： 0021-4922

eISSN： 1347-4065
Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device Peer-reviewed

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　070113　2011/07

DOI： 10.1143/JJAP.50.070113 　

ISSN： 0021-4922
Graphene FETs with SiCN gate stack deposited by PECVD using HMDS vapor Peer-reviewed

Tetsuya Suemitsu, Makoto Kubo, Ryo Takahashi, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

35th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Catania, Italy, May 29-Jun. 1, 2011　85-86　2011/05/30
Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano- and Hetero-Structures Peer-reviewed

Taiichi Otsuji, Takayuki Watanabe, Amine El Moutaouakil, Hiromi Karasawa, Tsuneyoshi Komori, Akira Satou, Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, Wojciech Knap, Victor Ryzhii

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES　32　(5)　629-645　2011/05

DOI： 10.1007/s10762-010-9714-0 　

ISSN： 1866-6892

eISSN： 1866-6906
Impact of T-gate electrode on gate capacitance in In0.7Ga0.3As HEMTs Peer-reviewed

Keisuke Akagawa, Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji, Hideo Yokohama, Gako Araki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2　8　(2)　300-302　2011

DOI： 10.1002/pssc.201000475 　

ISSN： 1862-6351
Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems Peer-reviewed

Amine El Moutaouakil, Tetsuya Suemitsu, Taiichi Otsuji, Hadley Videlier, Stephane-Albon Boubanga-Tombet, Dominique Coquillat, Wojciech Knap

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2　8　(2)　346-348　2011

DOI： 10.1002/pssc.201000569 　

ISSN： 1862-6351
Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications Peer-reviewed

H. Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H. -C. Kang, H. Karasawa, T. Suemitsu, T. Otsuji, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita, M. Suemitsu

JOURNAL OF MATERIALS CHEMISTRY　21　(43)　17242-17248　2011

DOI： 10.1039/c1jm12921j 　

ISSN： 0959-9428
Graphene/SiC/Si FETs with SiCN Gate Stack Peer-reviewed

T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, T. Otsuji

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53)　41　(6)　249-254　2011

DOI： 10.1149/1.3629973 　

ISSN： 1938-5862
New Semiconductor Materials and Devices for Terahertz Imaging and Sensing Peer-reviewed

T. Otsuji, T. Watanabe, K. Akagawa, Y. Tanimoto, S. Boubanga Tombet, T. Suemitsu, S. Chan, D. Coquillat, W. Knap, V. Ryzhii

2011 IEEE SENSORS　44-47　2011

DOI： 10.1109/ICSENS.2011.6127001 　
Epitaxial graphene top-gate FETs on silicon substrates Peer-reviewed

Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

SOLID-STATE ELECTRONICS　54　(10)　1071-1075　2010/10

DOI： 10.1016/j.sse.2010.05.030 　

ISSN： 0038-1101
Epitaxial Graphene-On-Silicon Logic Inverter Peer-reviewed

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials　880-881　2010/09/22
Nonresonant detection of terahertz radiation in high-electron mobility transistor structure using InAlAs/InGaAs/InP material systems at room temperature Peer-reviewed

A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, W. Knap

ANM2010: 3rd Int. Conf. on Advanced Nano Materials Digest　1　(1)　ANMM169　2010/09
Epitaxial graphene field-effect transistors on silicon substrates Peer-reviewed

Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

SOLID-STATE ELECTRONICS　54　(9)　1010-1014　2010/09

DOI： 10.1016/j.sse.2010.04.018 　

ISSN： 0038-1101

eISSN： 1879-2405
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems Peer-reviewed

Amine El Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji

IEICE TRANSACTIONS ON ELECTRONICS　E93C　(8)　1286-1289　2010/08

DOI： 10.1587/transele.E93.C.1286 　

ISSN： 0916-8524

eISSN： 1745-1353
Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures Peer-reviewed

Taiichi Otsuji, Hiromi Karasawa, Takayuki Watanabe, Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, Wojciech Knap, Victor Ryzhii

COMPTES RENDUS PHYSIQUE　11　(7-8)　421-432　2010/08

DOI： 10.1016/j.crhy.2010.04.002 　

ISSN： 1631-0705

eISSN： 1878-1535
[Invited Talk] Graphene channel FET: A new candidate for high-speed devices Invited

Tetsuya Suemitsu

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Tokyo, Japan, Jun. 30-Jul. 2　69-72　2010/06/30
Impact of T-gate electrode on gate capacitance in In0:7Ga0:3As HEMTs Peer-reviewed

K. Akagawa, S. Fukuda, T. Suemitsu, T. Otsuji, H. Yokohama, G. Araki

ISCS: Int. Symp. Compound Semicond. Dig.　1　(1)　273　2010/06
Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems Peer-reviewed

Amine El Moutaouakil, Tetsuya Suemitsu, Taiichi Otsuji, Hadley Videlier, Dominique Coquillat, Wojciech Knap

ISCS: Int. Symp. Compound Semicond. Dig.　1　(1)　274　2010/06
Heteroepitaxial Graphene on a Si Substrate Field-Effect Transistor Peer-reviewed

R. Olac-vaw, H.-C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, V. Mitin, T. Otsuji

APS March Meeting　1　(1)　Y21.00011　2010/03
Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates Peer-reviewed

Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　2010

DOI： 10.1143/JJAP.49.04DF17 　

ISSN： 0021-4922
T. Suemitsu Graphene channel FET: A new candidate for high-speed devices Peer-reviewed

Tetsuya Suemitsu

AWAD 2010: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc.　1　(1)　2010
Room temperature intense terahertz emission from a dual grating gate plasmon-resonant emitter using InAlAs/InGaAs/InP material systems Peer-reviewed

Amine El Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji

IEICE Transactions on Electronics　E93-C　(8)　1286-1289　2010
Publisher: Institute of Electronics, Information and Communication, Engineers, IEICE
DOI： 10.1587/transele.E93.C1286 　

ISSN： 1745-1353 0916-8524
Optoelectronic Application of Multi-layer Epitaxial Graphene on a Si Substrate Peer-reviewed

R. Olac-vaw, H. C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, V. Mitin, T. Otsuji

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2　1　(1)　224-+　2010
Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010) Peer-reviewed

Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(7)　04DF17　2010

DOI： 10.1143/JJAP.49.079201 　

ISSN： 0021-4922
Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate Peer-reviewed

Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(6)　06GG01　2010

DOI： 10.1143/JJAP.49.06GG01 　

ISSN： 0021-4922

eISSN： 1347-4065
Room Temperature Terahertz Detection in High-Electron-Mobility Transistor Structure using InAlAs/InGaAs/InP Material Systems Peer-reviewed

A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, W. Knap

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)　2010

DOI： 10.1109/ICIMW.2010.5612598 　
Multichip Operation of Plasmon-Resonant Microchip Emitters for Broadband Terahertz Spectroscopic Measurement, Peer-reviewed

T. Watanabe, T. Komori, T. Suemitsu, T. Otsuji

TeraTech''09: The Int. Workshop on Terahertz Technology 2009　203-204　2009/12/01
Ambipolar behavior in epitaxial graphene based FETs on Si substrate Peer-reviewed

Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

22nd Int. Microprocesses and Nanotechnology Conf. (MNC)　440-441　2009/11/19
Heteroepitaxial graphene on silicon: Process&device technology for ultra-high frequency devices Peer-reviewed

T. Otsuji, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, E. Sano

22nd Int'l Microprocesses and Nanotechnology Conf.　17B-3-2　2009/11
Extraction of drain current and effective mobility in epitaxial graphene channel FETs on silicon substrates Peer-reviewed

Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

Int. Conf. on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9　954-955　2009/10/07
Application of plasmon-resonant microchip emitters to broadband terahertz spectroscopic measurement Peer-reviewed

Yuki Tsuda, Tsuneyoshi Komori, Abdelouahad El Fatimy, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS　26　(9)　A52-A57　2009/09

DOI： 10.1364/JOSAB.26.000A52 　

ISSN： 0740-3224
Tunable terahertz source at room temperature based on GaN HEMT Peer-reviewed

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y. M.Meziani, C. Gaquiere, A. Cappy, M. Leszczynski, P. Dybko, C. Skierbiszewski, T. Suski, S. Porowski

EDISON: 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Dig.　1　(1)　73-73　2009/08
Epitaxial graphene on Si substrate for infrared photodetection Peer-reviewed

R. Olac‐vaw, H.C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

Int. Conf. on Graphene Tokyo　1　(1)　52　2009/07
Enhancement of Room-Temperature Terahertz Emission from a Double Grating-Gate Plasmon-Resonant Emitter Peer-reviewed

A. El Fatimy, Y. Tsuda, T. Komori, A. El Moutaouakil, K. Horiike, T. Suemitsu, T. Otsuji

Tech. Dig. CLEO: Conference on Lasers and Electrooptics　1　(1)　CMPP7-1-2　2009/06
Emission of terahertz radiation from two-dimensional electron systems in semiconductor nanoheterostructures Invited Peer-reviewed

T. Otsuji, Y. Tsuda, H. Karasawa, T. Suemitsu, M. Suemitsu, E. Sano, V. Ryzhii

Proc. 19th Int. Symp. on Nanostructures: Physics and Technology　1　(1)　66-68　2009/06
Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors Peer-reviewed

Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji, Dae-Hyun Kim, Jesus A. del Alamo

JAPANESE JOURNAL OF APPLIED PHYSICS　48　(4)　04C086-1-4　2009/04

DOI： 10.1143/JJAP.48.04C086 　

ISSN： 0021-4922
Analysis of Fringing Effect on Resonant Plasma Frequency in Plasma Wave Devices Peer-reviewed

Takuya Nishimura, Nobuhiro Magome, Irina Khmyrova, Tetsuya Suemitsu, Wojtek Knap, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　48　(4)　04C096-1-4　2009/04

DOI： 10.1143/JJAP.48.04C096 　

ISSN： 0021-4922
Application of plasmonic microchip emitters to broadband terahertz spectroscopic measurement Peer-reviewed

Y. Tsuda, T. Komori, H. Chen, T. Suemitsu, T. Otsuji

OTST 2009: International Workshop on Terahertz Science and Technology　2009/03
Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's Peer-reviewed

Taiichi Otsuji, Takuya Nishimura, Yuki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Eiichi Sano

International Journal of High Speed Electronics and Systems　19　(1)　33-53　2009/03

DOI： 10.1142/S0129156409006072 　

ISSN： 0129-1564
Plasmon-resonant Microchip Emitters and Their Applications to Terahertz Spectroscopy Invited Peer-reviewed

T. Otsuji, Y. Tsuda, T. Komori, T. Nishimura, A. El Fatimy, Y. M. Meziani, T. Suemitsu, E. Sano

PIERS 2009 BEIJING: PROGESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, PROCEEDINGS I AND II　11-+　2009

ISSN： 1559-9450
Spectral Narrowing of Terahertz Emission from Super-grating Dual-Gate Plasmon-Resonant High-Electron Mobility Transistors Peer-reviewed

A. El Moutaouakil, T. Watanabe, C. Haibo, T. Komori, T. Nishimura, T. Suemitsu, T. Otsuji

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　(1)　68-68　2009

DOI： 10.1088/1742-6596/193/1/012068 　

ISSN： 1742-6588
Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors Peer-reviewed

Y. M. Meziani, T. Nishimura, H. Tsuda, T. Suemitsu, W. Knap, V. V. Popov, T. Otsuji

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　(1)　69-69　2009

DOI： 10.1088/1742-6596/193/1/012071 　

ISSN： 1742-6588
Epitaxial graphene field effect transistors on silicon substrates Peer-reviewed

Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference　189-192　2009

DOI： 10.1109/ESSDERC.2009.5331308 　
Terahertz Plasmon-Resonant Microship Emitters and their Possible Sensing and Spectroscopic Applications Invited Peer-reviewed

Taiichi Otsuji, Yuki Tsuda, Tsuneyoshi Komori, Abdelouabad El Fatimy, Tetsuya Suemitsu

2009 IEEE SENSORS, VOLS 1-3　1　(1)　1991-1996　2009

DOI： 10.1109/ICSENS.2009.5398309 　
Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT Peer-reviewed

Y. M. Meziani, T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, W. Knap, T. Otsuji, E. Sano, G. M. Tsymbalov, V. V. Popov

JOURNAL OF NANOPHOTONICS　3　031980-1　2009

DOI： 10.1117/1.3266497 　

ISSN： 1934-2608
Spectral Narrowing of Terahertz Emission from Super-grating Dual-Gate Plasmon-Resonant High-Electron Mobility Transistors Peer-reviewed

A. El Moutaouakil, T. Watanabe, C. Haibo, T. Komori, T. Nishimura, T. Suemitsu, T. Otsuji

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　012068-1-4　2009

DOI： 10.1088/1742-6596/193/1/012068 　

ISSN： 1742-6588
Tunable room temperature Terahertz sources based on two dimensional plasma instability in GaN HEMTs Peer-reviewed

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y. M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Ch. Gaquiere, P. Prystawko, C. Skierbiszewski

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　012072-1-4　2009

DOI： 10.1088/1742-6596/193/1/012072 　

ISSN： 1742-6588
Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors Peer-reviewed

Y. M. Meziani, T. Nishimura, H. Tsuda, T. Suemitsu, W. Knap, V. V. Popov, T. Otsuji

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　012071-1-4　2009

DOI： 10.1088/1742-6596/193/1/012071 　

ISSN： 1742-6588
Tunable room temperature Terahertz sources based on two dimensional plasma instability in GaN HEMTs Peer-reviewed

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y. M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Ch. Gaquiere, P. Prystawko, C. Skierbiszewski

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　012072　2009

DOI： 10.1088/1742-6596/193/1/012072 　

ISSN： 1742-6588
Spectral Narrowing of Terahertz Emission from Super-grating Dual-Gate Plasmon-Resonant High-Electron Mobility Transistors Peer-reviewed

A. El Moutaouakil, T. Watanabe, C. Haibo, T. Komori, T. Nishimura, T. Suemitsu, T. Otsuji

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　012068　2009

DOI： 10.1088/1742-6596/193/1/012068 　

ISSN： 1742-6588
Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors Peer-reviewed

Y. M. Meziani, T. Nishimura, H. Tsuda, T. Suemitsu, W. Knap, V. V. Popov, T. Otsuji

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)　193　012071　2009

DOI： 10.1088/1742-6596/193/1/012071 　

ISSN： 1742-6588
Epitaxial graphene top-gate FETs on silicon substrates Peer-reviewed

Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

2009 International Semiconductor Device Research Symposium, ISDRS '09　TP1-03　2009

DOI： 10.1109/ISDRS.2009.5378157 　
Emission of terahertz radiation for spectroscopic applications utilizing two-dimensional plasmons in semiconductor eterostructures Invited Peer-reviewed

Taiichi Otsuji, Yuki Tsuda, Tsuneyoshi Komori, Takuya Nishimura, Yahya M. Meziani, Abdelouahad El Fatimy, Tetsuya Suemitsu, Eiichi Sano

13th Advanced Heterostructures and Nanostructures Workshop　2008/12
Transistor operation of epitaxial graphene channel on silicon substrate with SiC backgate barrier layer Peer-reviewed

H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, M. Suemitsu, T. Otsuji

Int. Symp. on Graphene Devices, Aizu-Wakamatsu, Japan, Nov. 17-19　30-31　2008/11/19
Graphene/SiC/Si group IV heterostructure transistors Peer-reviewed

Tetsuya Suemitsu, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Maki Suemitsu, Taiichi Otsuji

14th European Workshop on Heterostructure Technology, Nov. 3-5, Venice, Italy　135-136　2008/11/04
Analysis of Gate Delay Scaling in In_0.7Ga_0.3As-Channel HEMTs Peer-reviewed

Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji, Dae-Hyun Kim, Jesus A. del Alamo

Int. Conf. on Solid State Devices and Materials (SSDM), Tsukuba, Japan　166-167　2008/09/24
Effect of nonideality of the gate-2DEG channel capacitance on the frequency of plasma oscillations in the plasma wave devices Peer-reviewed

T. Nishimura, N. Magome, I. Khmyrova, T. Suemitsu, W. Knap, T. Otsuji

Int. Conf. on Solid State Devices and Materials (SSDM), Tsukuba, Japan　170-171　2008/09/24
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems Invited Peer-reviewed

T. Otsuji, Y. M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano, V. V. Popov

JOURNAL OF PHYSICS-CONDENSED MATTER　20　(38)　384206　2008/09

DOI： 10.1088/0953-8984/20/38/384206 　

ISSN： 0953-8984
An optically clocked transistor array for high-speed asynchronous label swapping: 40 Gb/s and beyond Peer-reviewed

Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Tatsushi Nakahara, Hiroyuki Suzuki

JOURNAL OF LIGHTWAVE TECHNOLOGY　26　(5-8)　692-703　2008/03

DOI： 10.1109/JLT.2007.915279 　

ISSN： 0733-8724

eISSN： 1558-2213
Terahertz emission from two-dimensional plasmons in high-electron-mobility transistors stimulated by optical signals Invited Peer-reviewed

Y. M. Meziani, T. Suemitsu, T. Otsuji, E. Sano

PIERS 2008 HANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, VOLS I AND II, PROCEEDINGS　393-+　2008

ISSN： 1559-9450
Broadband terahertz emission from dual-grating gate HEMT's -mechanism and emission spectral profile Peer-reviewed

T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, Y. M. Meziani, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, A. Satou, V. V. Popov, D. Coquillat, F. Teppe

Device Research Conference - Conference Digest, DRC　263-264　2008

DOI： 10.1109/DRC.2008.4800831 　

ISSN： 1548-3770
Analysis of intrinsic and parasitic gate delay of InGaAs HEMTs Invited Peer-reviewed

Tetsuya Suemitsu

ECS Transactions　16　(7)　65-72　2008

DOI： 10.1149/1.2983160 　

ISSN： 1938-5862 1938-6737
FREQUENCY PERFORMANCE OF PLASMA WAVE DEVICES FOR THZ APPLICATIONS AND THE ROLE OF FRINGING EFFECTS Peer-reviewed

Irina Khmyrova, Takuya Nishimura, Nobuhiro Magome, Tetsuya Suemitsu, Taiichi Otsuji

2008 IEEE 25TH CONVENTION OF ELECTRICAL AND ELECTRONICS ENGINEERS IN ISRAEL, VOLS 1 AND 2　640-+　2008

DOI： 10.1109/EEEI.2008.4736613 　

ISSN： 0899-6156
Terahertz emission from two-dimensional plasmons in HEMT’s stimulated by optical signals Invited Peer-reviewed

Taiichi Otsuji, Yahya M. Meziani, Tetsuya Suemitsu, Mitsuhiro Hanabe, Eiichi Sano

34th Int. Symp. on compound Semiconductors (ISCS)　TuBIII-6　2007/10/01
Terahertz emission from high electron mobility transistors stimulated by photo-induced plasmon instability Invited Peer-reviewed

T. Otsuji, T. Suemitsu, Y.M. Meziani, E. Sano

Virtual Conf. on Nanoscale Science and Technology (VC-NST)　2007/10/01
Enhanced gate swing in InPHEMTs with high threshold voltage by means of InAlAsSb barrier Peer-reviewed

Tetsuya Suemitsu, Haruki Yokoyama, Hiroki Sugiyama, Masami Tokurnitsu

IEEE ELECTRON DEVICE LETTERS　28　(8)　669-671　2007/08

DOI： 10.1109/LED.2007.901269 　

ISSN： 0741-3106
Terahertz-wave emission stimulated by photo-induced plasmon instability in double-decked InGaP/InGaAs/GaAs HEMT structures

Yohei Hosono, Yahya M. Meziani, Mitsuhiro Hanabe, Tetsuya Suemitsu, Taiichi Otsuji, Eiichi Sano

M7　2007/07
Development of solitons in composite right- and left-handed transmission lines periodically loaded with Schottky varactors Peer-reviewed

Koichi Narahara, Toru Nakamichi, Tetsuya Suemitsu, Taiichi Otsuji, Eiichi Sano

JOURNAL OF APPLIED PHYSICS　102　(2)　024501　2007/07

DOI： 10.1063/1.2753568 　

ISSN： 0021-8979

eISSN： 1089-7550
InPHEMT technology for high-speed logic and communications Invited Peer-reviewed

Tetsuya Suemitsu, Masami Tokumitsu

IEICE TRANSACTIONS ON ELECTRONICS　E90C　(5)　917-922　2007/05

DOI： 10.1093/ietele/e90-c.5.917 　

ISSN： 1745-1353
Challenges for ultra-high speed performance in high electron mobility transistors

Tetsuya Suemitsu

IEICE Trans. on Electronics　J90-C　(4)　312-318　2007/04/01
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 1345-2827
Recent achievements in the reliability of InP-based HEMTs Peer-reviewed

Tetsuya Suemitsu

THIN SOLID FILMS　515　(10)　4378-4383　2007/03

DOI： 10.1016/j.tsf.2006.07.108 　

ISSN： 0040-6090
A 40-Gb/s self-clocked bidirectional serial/parallel converter for asynchronous label swapping Peer-reviewed

Ryo Takahashi, Ryohei Urata, Tetsuya Suemitsu, Hiroyuki Suzuki

IEEE PHOTONICS TECHNOLOGY LETTERS　19　(5-8)　294-296　2007/03

DOI： 10.1109/LPT.2007.891239 　

ISSN： 1041-1135

eISSN： 1941-0174
Error-free label swapping of asynchronous optical packets with multifunctional optically clocked transistor array Peer-reviewed

R. Urata, R. Takahashi, T. Nakahara, T. Suemitsu, H. Suzuki

ELECTRONICS LETTERS　43　(6)　359-361　2007/03

DOI： 10.1049/el:20073866 　

ISSN： 0013-5194
SAW filters composed of interdigital Schottky and Ohmic contacts on AlGaN/GaN heterostructures Peer-reviewed

Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, Kohji Hohkawa

IEEE ELECTRON DEVICE LETTERS　28　(2)　90-92　2007/02

DOI： 10.1109/LED.2006.889043 　

ISSN： 0741-3106
Novel plasmon-resonant terahertz-wave emitter using a double-decked HEMT structure Peer-reviewed

T. Suemitsu, Y. M. Meziani, Y. Hosono, M. Hanabe, T. Otsuji, E. Sano

65th DRC Device Research Conference　157-158　2007

DOI： 10.1109/DRC.2007.4373696 　
Ultrafast optoelectronic switching of an optically clocked transistor array Peer-reviewed

R. Urata, R. Takahashi, T. Suemitsu, T. Nakahara

2007 PHOTONICS IN SWITCHING　59-60　2007

DOI： 10.1109/PS.2007.4300743 　

ISSN： 2155-8515
Improved stability in wide-recess InPHEMTs by means of a fully passivated two-step-recess gate Peer-reviewed

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

IEICE ELECTRONICS EXPRESS　3　(13)　310-315　2006/07

DOI： 10.1587/elex.3.310 　

ISSN： 1349-2543
Interdigital transducers with control gates on AlGaN/GaN heterostructures Peer-reviewed

Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, Kohji Hohkawa

APPLIED PHYSICS LETTERS　89　(3)　033501　2006/07

DOI： 10.1063/1.2221899 　

ISSN： 0003-6951
[Invited Talk] InP HEMT technology for high-speed logic and communications Invited

Tetsuya Suemitsu, Masami Tokumitsu

Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), Sendai, Japan, Jul. 3-5　2006/07
Field-effect AlGaN/GaN surface acoustic wave filters with >40-dB isolation for integration with HEMTs Peer-reviewed

Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, Kohji Hohkawa

64th Device Research Conf. (DRC)　2006/06

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State College, PA, USA, Jun. 26-28
An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets Peer-reviewed

Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Hiroyuki Suzuki

IEICE ELECTRONICS EXPRESS　3　(7)　129-135　2006/04

DOI： 10.1587/elex.3.129 　

ISSN： 1349-2543
Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers Peer-reviewed

K. Shiojima, T. Makimura, T. Maruyama, T. Kosugi, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

Physica Status Solidi C: Conferences　3　(3)　469-472　2006

DOI： 10.1002/pssc.200564104 　

ISSN： 1610-1634
40-Gb/s serial-to-parallel and parallel-to-serial conversion with an optically clocked transistor array Peer-reviewed

Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Hiroyuki Suzuki

2006 OPTICAL FIBER COMMUNICATION CONFERENCE/NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, VOLS 1-6　2322-2324　2006
Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers Peer-reviewed

K Shiojima, T Makimura, T Maruyama, T Kosugi, T Suemitsu, N Shigekawa, M Hiroki, H Yokoyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3　3　(3)　469-+　2006

DOI： 10.1002/pssc.200564104 　

ISSN： 1862-6351
Self-clocked serial-to-parallel and parallel-to-serial conversion with an optically clocked transistor array Peer-reviewed

Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Hiroyuki Suzuki

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006　2006

DOI： 10.1109/CLEO.2006.4628165 　
AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation Peer-reviewed

Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5　1331-+　2006

DOI： 10.1109/MWSYM.2006.249494 　

ISSN： 0149-645X
Label swapping of an asynchronous burst optical packet stream with a self-clocked optically clocked transistor array Peer-reviewed

R. Urata, R. Takahashi, T. Nakahara, T. Suemitsu, H. Suzuki

2006 European Conference on Optical Communications Proceedings, ECOC 2006　2006

DOI： 10.1109/ECOC.2006.4801177 　
All-optical and optoelectronic serial-to-parallel conversion of high-speed, asynchronous optical packets Invited Peer-reviewed

Ryohei Urata, Ryo Takahashi, Takako Yasui, Tetsuya Suemitsu, Tatsushi Nakahara, Hiroyuki Suzuki

2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2　747-+　2006

DOI： 10.1109/LEOS.2006.278965 　

ISSN： 1092-8081
Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs Peer-reviewed

K. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6　3　(6)　2360-2363　2006

DOI： 10.1002/pssc.200565130 　

ISSN： 1862-6351
Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate high-electron-mobility transistors on sapphire substrates Peer-reviewed

K Shiojima, T Makimura, T Suemitsu, N Shigekawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　44　(12)　8435-8440　2005/12

DOI： 10.1143/JJAP.44.8435 　

ISSN： 0021-4922
Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate high-electron-mobility transistors on sapphire substrates Peer-reviewed

K Shiojima, T Makimura, T Suemitsu, N Shigekawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　44　(12)　8435-8440　2005/12

DOI： 10.1143/JJAP.44.8435 　

ISSN： 0021-4922
Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate HEMTs Peer-reviewed

Kenji Shiojima, Takashi Makimura, Takashi Maruyama, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama

State-of-the-art Program on Compound Semiconductors (SOTAPOCS)　2005/10

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Los Angels, CA, USA, Oct. 16-21
[Invited Talk] Recent achievements in the reliability of InP HEMTs Invited Peer-reviewed

Tetsuya Suemitsu

3rd Int. Conf. on Materials for Advanced Technologies (ICMAT), Singapore, Jul. 3-8　2005/07
Growth of InP high electron mobility transistor structures with Te doping Peer-reviewed

BR Bennett, T Suemitsu, N Waldron, JA del Alamo

JOURNAL OF CRYSTAL GROWTH　278　(1-4)　596-599　2005/05

DOI： 10.1016/j.jcrysgro.2004.12.070 　

ISSN： 0022-0248

eISSN： 1873-5002
Hydrogen sensitivity of InPHEMTs with WSiN-based gate stack Peer-reviewed

SD Mertens, JA del Alamo, T Suemitsu, T Enoki

IEEE TRANSACTIONS ON ELECTRON DEVICES　52　(3)　305-310　2005/03

DOI： 10.1109/TED.2005.843871 　

ISSN： 0018-9383

eISSN： 1557-9646
Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors Peer-reviewed

T Suemitsu, K Shiojima, T Makimura, N Shigekawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(1-7)　L211-L213　2005

DOI： 10.1143/JJAP.44.L211 　

ISSN： 0021-4922
An intrinsic delay extraction method for Schottky gate field effect transistors Peer-reviewed

T Suemitsu

IEEE ELECTRON DEVICE LETTERS　25　(10)　669-671　2004/10

DOI： 10.1109/LED.2004.834910 　

ISSN： 0741-3106

eISSN： 1558-0563
Growth of InP HEMTs with Te doping Peer-reviewed

Brian R. Bennett, Tetsuya Suemitsu, Niamh Waldron, Jesus A. del Alamo

13th Int. Conf. on Molecular Beam Epitaxy (MBE)　2004/08

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Edinburgh, UK, Aug. 22-27
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm Peer-reviewed

R. Pierobon, F. Rampazzo, F. Clonfero, T. De Pellegrin, M. Bertazzo, G. Meneghesso, E. Zanoni, T. Suemitsu, T. Enoki

16th Int. Conf. on Indium Phosphide and Related Materials (IPRM)　823-826　2004/06

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Kagoshima, Japan, May 31-Jun. 4
Frequency transconductance and gate-lag dispersion in InAlAs/InGaAs/InP HEMTs Peer-reviewed

G. Meneghesso, F. Rampazzo, G. Schentato, L. Cecchetto, R. Pierobon, E. Zanoni, T. Suemitsu, T. Enoki

27th Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOCSDICE)　2003/05

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Fuerigen, Switzerland, May 26-28
Correlation between current-voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition Peer-reviewed

K Shiojima, T Suemitsu

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B　21　(2)　698-705　2003/03

DOI： 10.1116/1.1547735 　

ISSN： 1071-1023
A voltage-controlled phase shifter that uses gate electrode lines of traveling-wave field effect transistors Peer-reviewed

Koichi Narahara, Tetsuya Suemitsu

Ultrafast Electronics and Optoelectronics (UEO)　2003/01

DOI： 10.1143/jjap.42.4953 　

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Washington, DC, USA, Jan. 15-16
Hydrogen sensitivity of InPHEMTs with a thick Ti-layer in the Ti/Pt/Au gate stack Peer-reviewed

SD Mertens, JA del Alamo, T Suemitsu, T Enoki

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS　223-226　2003

ISSN： 1092-8669
30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs Peer-reviewed

T Suemitsu, H Yokoyama, T Ishii, T Enoki, G Meneghesso, E Zanoni

IEEE TRANSACTIONS ON ELECTRON DEVICES　49　(10)　1694-1700　2002/10

DOI： 10.1109/TED.2002.803646 　

ISSN： 0018-9383
Optical study of high-biased AlGaN/GaN high-electron-mobility transistors Peer-reviewed

N Shigekawa, K Shiojima, T Suemitsu

JOURNAL OF APPLIED PHYSICS　92　(1)　531-535　2002/07

DOI： 10.1063/1.1481973 　

ISSN： 0021-8979
Influence of hole accumulation on source resistance, kink effect and on-state breakdown of InP-based high electron mobility transistors: Light irradiation study Peer-reviewed

T Suemitsu, H Fushimi, S Kodama, S Tsunashima, S Kimura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　41　(2B)　1104-1107　2002/02

DOI： 10.1143/JJAP.41.1104 　

ISSN： 0021-4922
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs Peer-reviewed

T Suemitsu, YK Fukai, H Sugiyama, K Watanabe, H Yokoyama

MICROELECTRONICS RELIABILITY　42　(1)　47-52　2002/01

DOI： 10.1016/S0026-2714(01)00215-3 　

ISSN： 0026-2714
Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack Peer-reviewed

S. D. Mertens, J. A. Del Alamo, T. Suemitsu, T. Enoki

Conference Proceedings-International Conference on Indium Phosphide and Related Materials　323-326　2002

DOI： 10.1109/ICIPRM.2002.1014397 　

ISSN： 1092-8669
Gate and recess engineering for ultrahigh-speed InP-based HEMTs Invited Peer-reviewed

T Suemitsu, T Ishii, Y Ishii

IEICE TRANSACTIONS ON ELECTRONICS　E84C　(10)　1283-1288　2001/10

ISSN： 0916-8524

eISSN： 1745-1353
Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors Peer-reviewed

N Shigekawa, K Shiojima, T Suemitsu

APPLIED PHYSICS LETTERS　79　(8)　1196-1198　2001/08

DOI： 10.1063/1.1398332 　

ISSN： 0003-6951
Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts Peer-reviewed

K Shiojima, T Suemitsu, M Ogura

APPLIED PHYSICS LETTERS　78　(23)　3636-3638　2001/06

DOI： 10.1063/1.1370538 　

ISSN： 0003-6951
Correlation between I-V characteristics and dislocations for Au/Ni/n-GaN Schottky contacts Peer-reviewed

Kenji Shiojima, Tetsuya Suemitsu, Mitsumasa Ogura

43rd Electronic Material Conf. (EMC)　2001/06

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Notre Dame, IN, USA, Jun. 27-29
Influence of hole accumulation on source resistance, kink effect and on-state breakdown of InP-based high electron mobility transistors: Light irradiation study Peer-reviewed

Tetsuya Suemitsu, Hiroshi Fushimi, Satoshi Kodama, Satoshi Tsunashima, Shunji Kimura

13th Int. Conf. on Indium Phosphide and Related Materials (IPRM)　14-18　2001/05

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Nara, Japan, May 14-18
[Invited Talk] Design and fabrication of gate and gate recess for ultrahigh-speed InP-based HEMTs Invited Peer-reviewed

Tetsuya Suemitsu, Tetsuyoshi Ishii, Haruki Yokoyama

25th Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOCSDICE), Cagliari, Italy, May 27-30　47-48　2001/05
Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization Peer-reviewed

T Kosugi, Y Umeda, T Suemitsu, T Enoki, Y Yamane

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　40　(4B)　2725-2727　2001/04

DOI： 10.1143/JJAP.40.2725 　

ISSN： 0021-4922
Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure Peer-reviewed

K Shiojima, N Shigekawa, T Suemitsu

IEICE TRANSACTIONS ON ELECTRONICS　E83C　(12)　1968-1970　2000/12

ISSN： 0916-8524

eISSN： 1745-1353
Frequency dispersion in drain conductance of InAlAs/InGaAs HEMTs and its correlation with impact ionization Peer-reviewed

Toshihiko Kosugi, Yohtaro Umeda, Tetsuya Suemitsu, Takatomo Enoki

Int. Conf. on Solid State Devices and Materials (SSDM)　394-395　2000/09

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Sendai, Japan, Sep. 29-31
[Invited Talk] Gate and recess engineering for ultrahigh-speed InP-based HEMTs Invited Peer-reviewed

Tetsuya Suemitsu, Tetsuyoshi Ishii, Yasunobu Ishii

Topical Workshop on Heterostructure Microelectronics (TWHM), Kyoto, Japan, Aug. 20-23　2-3　2000/08
Suppression of degradation in InP-based HEMTs by inserting InAlP in carrier supply layer Peer-reviewed

Yoshino K. Fukai, Tetsuya Suemitsu, Takashi Makimura, Haruki Yokoyama

Topical Workshop on Heterostructure Microelectronics (TWHM)　30-31　2000/08

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Kyoto, Japan, Aug. 20-23
Characterization and reliability of InP-based HEMTs implemented with different process options Peer-reviewed

G. Meneghesso, R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni

European Workshop on Compound Semiconductor Devices (WOCSDICE)　2000/05

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Aegean Sea, Greece, May 29-Jun. 2
InP-based high electron mobility transistors (HEMTs)

Tetsuya Suemitsu

Oyo-buturi　69　(2)　141-151　2000/02
Publisher: Jpn. Soc. of Appl. Phys.
DOI： 10.11470/oubutsu1932.69.141 　

ISSN： 0369-8009
Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: An electrochemical fabrication technology Peer-reviewed

D Xu, T Suemitsu, J Osaka, Y Umeda, Y Yamane, Y Ishii, T Ishii, T Tamamura

IEEE TRANSACTIONS ON ELECTRON DEVICES　47　(1)　33-43　2000/01

DOI： 10.1109/16.817564 　

ISSN： 0018-9383

eISSN： 1557-9646
Fabrication of AlGaN/GaN HEMTs with buried p-layers Peer-reviewed

K Shiojima, N Shigekawa, T Suemitsu

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS　1　927-930　2000
Parasitic effects and long term stability of InP-based HEMTs Peer-reviewed

G. Meneghesso, R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni

Microelectronics Reliability　40　(8-10)　1715-1720　2000
Publisher: Elsevier Ltd
DOI： 10.1016/S0026-2714(00)00168-2 　

ISSN： 0026-2714
Effective length of high-field region in InGaAs-based lattice-matched HEMTs Peer-reviewed

N Shigekawa, T Suemitsu, Y Umeda

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS　333-338　2000
Parasitic effects and long term stability of InP-based HEMTs Peer-reviewed

G. Meneghesso, R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni

Microelectronics Reliability　40　(8-10)　1715-1720　2000
Publisher: Elsevier Ltd
DOI： 10.1016/S0026-2714(00)00168-2 　

ISSN： 0026-2714
Reliability study of parasitic source and drain resistances of InP-based HEMTs Peer-reviewed

T Suemitsu, YK Fukai, H Sugiyama, K Watanabe, H Yokoyama

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST　190-193　2000

DOI： 10.1109/IEDM.2000.904290 　
Impact-ionization-induced noise in InGaAs-based 0.1-mu m-gate HEMTs Peer-reviewed

N Shigekawa, T Furuta, T Suemitsu, Y Umeda

PHYSICA B　272　(1-4)　562-564　1999/12

DOI： 10.1016/S0921-4526(99)00339-7 　

ISSN： 0921-4526
Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs Peer-reviewed

T Suemitsu, H Yokoyama, Y Ishii

ELECTRONICS LETTERS　35　(24)　2141-2143　1999/11

DOI： 10.1049/el:19991433 　

ISSN： 0013-5194
Optical characterization of impact ionization in flip-chip-bonded InP-based high electron mobility transistors Peer-reviewed

N Shigekawa, T Furuta, T Suemitsu, Y Umeda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　38　(10)　5823-5828　1999/10

DOI： 10.1143/JJAP.38.5823 　

ISSN： 0021-4922
Impact-ionization-induced noise in InGaAs-based 0.1-um gate HEMTs Peer-reviewed

Naoteru Shigekawa, Tomofumi Furuta, Tetsuya Suemitsu, Yohtaro Umeda

11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS)　94　1999/07

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Kyoto, Japan
High-performance 0.1-mu m gate enhancement-mode InAlAs InGaAs HEMT's using two-step recessed gate technology Peer-reviewed

T Suemitsu, H Yokoyama, Y Umeda, T Enoki, Y Ishii

IEEE TRANSACTIONS ON ELECTRON DEVICES　46　(6)　1074-1080　1999/06

DOI： 10.1109/16.766866 　

ISSN： 0018-9383
Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts Invited Peer-reviewed

Dong Xu, Tetsuya Suemitsu, Jiro Osaka, Yohtaro Umeda, Yasunobu Ishii, Tetsuyoshi Ishii, Toshiaki Tamamura

57th Annual Device Research Conf. (DRC)　150-151　1999/06

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Santa Barbara, USA
An 0.03-mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f(T) and 2 S/mm extrinsic transconductance Peer-reviewed

D Xu, T Suemitsu, J Osaka, Y Umeda, Y Yamane, Y Ishii, T Ishii, T Tamamura

IEEE ELECTRON DEVICE LETTERS　20　(5)　206-208　1999/05

DOI： 10.1109/55.761016 　

ISSN： 0741-3106
Ultrahigh-speed IC technologies using InP-based HEMTs for future optical communication systems Peer-reviewed

Y Umeda, T Enoki, T Otsuji, T Suemitsu, H Yokoyama, Y Ishii

IEICE TRANSACTIONS ON ELECTRONICS　E82C　(3)　409-418　1999/03

ISSN： 1745-1353
Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well Peer-reviewed

D Xu, J Osaka, Y Umeda, T Suemitsu, Y Yamane, Y Ishii

IEEE ELECTRON DEVICE LETTERS　20　(3)　109-112　1999/03

DOI： 10.1109/55.748904 　

ISSN： 0741-3106
Highly stable device characteristics of InP-based enhancement-mode high electron mobility transistors with two-step-recessed gates Peer-reviewed

T Suemitsu, H Yokoyama, Y Umeda, T Enoki, Y Ishii

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　38　(2B)　1174-1177　1999/02

DOI： 10.1143/JJAP.38.1174 　

ISSN： 0021-4922
High-resolution scanning electron microscopy observation of electrochemical etching in the formation of gate grooves for InP-based modulation-doped field-effect transistors Peer-reviewed

D Xu, T Enoki, T Suemitsu, Y Ishii

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　38　(2B)　1182-1185　1999/02

DOI： 10.1143/JJAP.38.1182 　

ISSN： 0021-4922
Electroluminescence of flip-chip-bonded InP-based HEMTs with 0.1-mu m gate Peer-reviewed

N Shigekawa, T Furuta, S Kodama, T Suemitsu, Y Umeda

COMPOUND SEMICONDUCTORS 1998　(162)　865-870　1999

ISSN： 0951-3248
30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency Peer-reviewed

Tetsuya Suemitsu, Tetsuyoshi Ishiii, Haruki Yokoyama, Takatomo Enoki, Yasunobu Ishii, Toshiaki Tamamura

Japanese Journal of Applied Physics, Part 2: Letters　38　(2 B)　L154-L156　1999
Publisher: JJAP
DOI： 10.1143/JJAP.38.L154 　

ISSN： 0021-4922
Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance Peer-reviewed

D. Xu, T. Suemitsu, H. Yokoyama, Y. Umeda, Y. Yamane, T. Enoki, Y. Ishii

Solid-State Electronics　43　(8)　1527-1533　1999
Publisher: Elsevier Science Ltd
DOI： 10.1016/S0038-1101(99)00099-4 　

ISSN： 0038-1101
An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation Peer-reviewed

T Suemitsu, T Enoki, N Sano, M Tomizawa, Y Ishii

IEEE TRANSACTIONS ON ELECTRON DEVICES　45　(12)　2390-2399　1998/12

DOI： 10.1109/16.735714 　

ISSN： 0018-9383
Self-compensation of short-channel effects in sub-0.1-mu m InAlAs/InGaAs MODFET's by electrochemical etching Peer-reviewed

D Xu, T Enoki, Y Umeda, T Suemitsu, Y Yamane, Y Ishii

IEEE ELECTRON DEVICE LETTERS　19　(12)　484-486　1998/12

DOI： 10.1109/55.735754 　

ISSN： 0741-3106

eISSN： 1558-0563
Impact of subchannel design on DC and RF performance of 0.1 mu m MODFETs with InAs-inserted channel Peer-reviewed

D Xu, J Osaka, T Suemitsu, Y Umeda, Y Yamane, Y Ishii

ELECTRONICS LETTERS　34　(20)　1976-1977　1998/10

DOI： 10.1049/el:19981231 　

ISSN： 0013-5194
Enhancement of wak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps: simulation and experiments Peer-reviewed

Tetsuya Suemitsu, Masaaki Tomizawa, Takatomo Enoki, Yasunobu Ishii

6th Int. Workshop on Computational Electronics (IWCE)　250-253　1998/10

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Osaka, Japan, Oct. 19-22
Improving threshold-voltage uniformity of 0.1 μm InP-based MODFETs with different gate layouts Peer-reviewed

D. Xu, T. Enoki, T. Suemitsu, Y. Umeda, Y. Yamane, Y. Ishii

Electronics Letters　34　(16)　1614-1615　1998/08/06
Publisher: Institution of Engineering and Technology
DOI： 10.1049/el:19981118 　

ISSN： 0013-5194
Electrochemical formation of asymmetry in gate-recess groove for InAlAs/InGaAs MOFETs with short gate-lengths Peer-reviewed

Dong Xu, Takatomo Enoki, Tetsuya Suemitsu, Yohtaro Umeda, Haruki Yokoyama, Yasunobu Ishii

Topical Workshop on Heterostructure Microelectronics (TWHM)　70-71　1998/08

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Kanagawa, Japan
Electrochemical-induced asymmetrical etching in InAlAs/InGaAs heterojunction for MODFET fabrication Peer-reviewed

Dong Xu, Takatomo Enoki, Tetsuya Suemitsu, Yohtaro Umeda, Haruki Yokoyama, Yasunobu Ishii

J. Electronic Materials　27　(7)　L51-L53　1998/07

DOI： 10.1007/s11664-998-0122-3 　
Improved recessed-gate structure for sub-0.1-mu m-gate InP-based high electron mobility transistors Peer-reviewed

T Suemitsu, T Enoki, H Yokoyama, Y Ishii

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　37　(3B)　1365-1372　1998/03

DOI： 10.1143/JJAP.37.1365 　

ISSN： 0021-4922
Impact of two-step-recessed gate structure on RF performance of InP-based HEMTs Peer-reviewed

T Suemitsu, T Enoki, H Yokoyama, Y Umeda, Y Ishii

ELECTRONICS LETTERS　34　(2)　220-222　1998/01

DOI： 10.1049/el:19980166 　

ISSN： 0013-5194
High-performance 0.1-mu m-gate enhancement-mode InAlAs/InGaAs HEMTs using two-step-recessed gate technology Peer-reviewed

T Suemitsu, H Yokoyama, Y Umeda, T Enoki, Y Ishii

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS　497-500　1998

ISSN： 1092-8669
Electrochemical etching in wet-chemical gate recess for InAlAs/InGaAs heterojunction FETs Peer-reviewed

D Xu, T Enoki, T Suemitsu, Y Ishii

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS　797-800　1998

ISSN： 1092-8669
30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates Peer-reviewed

T Suemitsu, T Ishii, H Yokoyama, Y Umeda, T Enoki, Y Ishii, T Tamamura

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST　223-226　1998

DOI： 10.1109/IEDM.1998.746339 　
Novel gate-recess process for the reduction of parasitic phenomena due to side-etching in InAlAs/InGaAs HEMTs Peer-reviewed

Tetsuya Suemitsu, Takatomo Enoki, Haruki Yokoyama, Yasunobu Ishii

Int. Conf. on Solid State Devices and Materials (SSDM)　16-19　1997/09

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Hamamatsu, Japan, Sep. 16-19
Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs Peer-reviewed

T Suemitsu, T Enoki, M Tomizawa, N Shigekawa, Y Ishii

1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS　365-368　1997

ISSN： 1092-8669
Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTs Peer-reviewed

T Suemitsu, T Enoki, Y Ishii

ELECTRONICS LETTERS　32　(12)　1143-1144　1996/06

DOI： 10.1049/el:19960726 　

ISSN： 0013-5194

eISSN： 1350-911X
BODY CONTACTS IN INP-BASED INALAS/INGAAS HEMTS AND THEIR EFFECTS ON BREAKDOWN VOLTAGE AND KINK SUPPRESSION Peer-reviewed

T SUEMITSU, T ENOKI, Y ISHII

ELECTRONICS LETTERS　31　(9)　758-759　1995/04

DOI： 10.1049/el:19950496 　

ISSN： 0013-5194

eISSN： 1350-911X

Show all ︎Show first 5

Misc. 40

Photothermoelectric fast THz detection by unipolar operation of Graphene FETs

田村紘一, TANG Chao, 荻浦大地, 諏訪健斗, 吹留博一, 佐藤昭, 瀧田佑馬, 南出泰亜, 末光哲也, 尾辻泰一

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　83rd　2022

ISSN： 2758-4704
Recent Progress in Carrier Down-Conversion Devices Between Optical Communication and Beyond 5G Wireless Communication

佐藤昭, 佐藤昭, 中嶋大, 中嶋大, 西村和樹, 西村和樹, 細谷友崇, 細谷友崇, 細谷友崇, 岩月勝美, 末光哲也, 末光哲也, 葛西恵介, 葛西恵介, 吉田真人, 吉田真人, 尾辻泰一, 尾辻泰一

電子情報通信学会技術研究報告(Web)　121　(309(ED2021 48-61))　2021

ISSN： 2432-6380
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE (電子デバイス)

PRASERTSUK Kiattiwut, TANIKAWA Tomoyuki, KIMURA Takeshi, KUBOYA Shigeyuki, SUEMITSU Tetsuya, MATSUOKA Takashi

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報　117　(58)　59-64　2017/05/25
Publisher: 電子情報通信学会
ISSN： 0913-5685
Improvement of light receiving efficiency of asymmetric-dual-grating-gate high-electron-mobility-transistor by series array and lens integration

116　(375)　23-28　2016/12/19
Publisher: 電子情報通信学会
ISSN： 0913-5685
グラフェンFET及びInGaAs-HEMTを用いたミリ波帯光電子ミキサ

菅原健太, 川崎鉄哉, 玉虫元, 末光眞希, 吹留博一, 可児淳一, 寺田純, 桑野茂, 岩月勝美, 末光哲也, 末光哲也, 尾辻泰一, 尾辻泰一

電子情報通信学会大会講演論文集(CD-ROM)　2015　2015

ISSN： 1349-144X
グラフェンチャネルFETのサブテラヘルツ帯ミキサ応用

菅原健太, 川崎鉄哉, HUSSIN Mastura Binti, 玉虫元, 末光眞希, 吹留博一, 可児淳一, 寺田純, 桑野茂, 岩月勝美, 末光哲也, 末光哲也, 尾辻泰一, 尾辻泰一

応用物理学会春季学術講演会講演予稿集(CD-ROM)　62nd　2015
SiNゲートスタックによる高キャリア移動度グラフェンチャネルFET

玉虫元, 菅原健太, HUSSIN Mastura binti, 末光哲也, 須藤亮太, 吹留博一, 末光眞希, 尾辻泰一

応用物理学会春季学術講演会講演予稿集(CD-ROM)　62nd　2015
Terahertz Wave Generation Using Plasmonic Metamaterials

24　(1)　48-56　2014/08
Publisher: 日本赤外線学会
ISSN： 0916-7900
グラフェン/SiC/SiバックゲートFET特性とSiC層厚の関係

江藤隆紀, 鷹林将, 鷹林将, 三本菅正太, 猪俣州哉, 吹留博一, 吹留博一, 末光眞希, 末光眞希, 末光哲也, 末光哲也, 尾辻泰一, 尾辻泰一

応用物理学会学術講演会講演予稿集(CD-ROM)　73rd　2012
C-10-2 Graphene FETs on Si(001) Sibstrate

Kubo M., Handa H., Kang H C, Fukushima T., Takahashi R., Takabayashi S., Fukidome H., Suemitsu T., Suemitsu M., Otsuji T.

Proceedings of the IEICE General Conference　2011　(2)　49-49　2011/02/28
Publisher: The Institute of Electronics, Information and Communication Engineers
Dual-gate動作によるgraphene channel変調と超高速デバイスへの応用

鄭明鎬, 全春日, 吹留博一, 末光哲也, 末光哲也, 尾辻泰一, 尾辻泰一, 末光眞希, 末光眞希

応用物理学会学術講演会講演予稿集(CD-ROM)　72nd　2011
グラフェン/金属界面の化学

鷹林将, 鷹林将, 久保真人, 高橋良太, 吹留博一, 吹留博一, 末光眞希, 末光眞希, 末光哲也, 末光哲也, 尾辻泰一, 尾辻泰一

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　2011
ダイヤモンドライクカーボンをゲート絶縁膜としたグラフェンFET

鷹林将, 鷹林将, 小川修一, 高桑雄二, KANG Hyun-Chul, 高橋良太, 吹留博一, 吹留博一, 末光眞希, 末光眞希, 末光哲也, 末光哲也, 尾辻泰一, 尾辻泰一

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　2011
HMDS-SiNをゲート絶縁膜として用いたグラフェンFET

久保真人, 福嶋哲也, KANG H.-C., 赤川啓介, 吉田智洋, 高橋良太, 半田浩之, JUNG M.-H., 鷹林将, 鷹林将, 吹留博一, 吹留博一, 末光哲也, 末光哲也, 末光眞希, 末光眞希, 尾辻泰一, 尾辻泰一

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　2011
グラフェン/白金コンタクト界面の化学結合

鷹林将, 高橋良太, 末光哲也, 吹留博一, 末光眞希, 尾辻泰一

応用物理学会学術講演会講演予稿集(CD-ROM)　71st　2010
シリコン基板上におけるトップゲート型エピタキシャルグラフェンFET

久保真人, KANG H-C, 唐澤宏美, 宮本優, 半田浩之, 吹留博一, 吹留博一, 末光哲也, 末光哲也, 末光眞希, 末光眞希, 尾辻泰一, 尾辻泰一

応用物理学関係連合講演会講演予稿集(CD-ROM)　57th　2010
H₂アニールによるエピタキシャルグラフェンの電気特性への影響

久保真人, KANG H-C, 高橋良太, 半田浩之, 鷹林将, 鷹林将, 吹留博一, 吹留博一, 末光哲也, 末光哲也, 末光眞希, 末光眞希, 尾辻泰一, 尾辻泰一

応用物理学会学術講演会講演予稿集(CD-ROM)　71st　2010
グラフェン/10族金属コンタクト界面の化学結合

鷹林将, 久保真人, 高橋良太, 阿部峻佑, 末光哲也, 吹留博一, 末光眞希, 尾辻泰一, 鷹林将, 末光哲也, 吹留博一, 末光眞希, 尾辻泰一

表面科学学術講演会講演要旨集　30th　2010
DLCをゲート絶縁膜としたグラフェンFET

鷹林将, 鷹林将, 小川修一, 高桑雄二, 阿部峻佑, 高橋良太, 吹留博一, 吹留博一, 末光眞希, 末光眞希, 末光哲也, 末光哲也, 尾辻泰一, 尾辻泰一

炭素材料学会年会要旨集　37th　2010
Multichip Operation of Plasmon-Resonant Microchip Emitter for Broadband Terahertz Spectroscopic Measurement

WATANABE Takayuki, KOMORI Tsuneyoshi, SUEMITSU Tetsuya, OTSUJI Taiichi

IEICE technical report　109　(313)　47-51　2009/11/22
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We have experimentally observed the emission of broadband terahertz radiation with a microwatt power at room temperature originated from the DC-current-driven plasmon instability in our original double-grating-gates high-electron mobility transistors. The device has been introduced into a Fourier-transformed far-infrared spectrometer as a terahertz light source. In this work, triple-chip of the emitters on a die is simultaneously driven to increase the radiation intensity. The triple-chip operation shows a better S/N ratio than that in the single-chip. The experimental results suggest that an arrayed structure can boost the emission power by order(s) of magnitude, exceeding the power of a standard mercury lamp.
C-4-7 二次元共鳴プラズモンを利用したテラヘルツ帯光源デバイス(C-4.レーザ・量子エレクトロニクス,一般セッション)

久保真人, 小森常義, 津田祐樹, チェンハイボー, 末光哲也, 尾辻泰一

電子情報通信学会ソサイエティ大会講演論文集　2009　(1)　245-245　2009/09/01
Publisher: 一般社団法人電子情報通信学会
Intrinsic and Parasitic Delay Analysis in InGaAs-Channel HEMTs

SUEMITSU Tetsuya, FUKUDA Shunsuke, HORIIKE Kohei, OTSUJI Taiichi, KIM Dae-Hyun, DEL ALAMO Jesus A.

2009　(34)　27-31　2009/03/09
Eptaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices

OTSUJI Taiichi, SUEMITSU Tetsuya, KANG Hyon-Choru, KARASAWA Hiromi, MIYAMOTO Yu, HANDA Hiroyuki, SUEMITSU Maki, SANO Eiichi, RYZHII Maxim, RYZHII Victor

IEICE technical report　108　(437)　1-6　2009/02/19
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electron devices. Exfoliation from highly-oriented pyrolitic graphite and surface decomposition of epitaxial SiC are wellknown as graphene formation technologies. However, when it is introduced to the post-CMOS VLSIs as the key material, introduction of Si substrate as the starting material as well as practically low-temperature, reproducible growth technology are mandatory. To cope with those issues we developed "graphene-on-silicon" material growth technology consisting of epitaxial growth of 3C-SiC onto Si substrate using organo-silan gas-source MBE and surface decomposition processes. By utilizing such a new GOS material to form the channel with graphene, we succeeded in the transistor operation. This is the first step ahead; we have recognized existing subjects for ultra-high performance, mass-productive device fabrication. The exceptional electronic properties of graphene can devise wide variety of new devices including plasmonic devices and terahertz lasers which will also be described.
Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs

HORIIKE Kohei, FUKUDA Shunsuke, AKAGAWA Keisuke, SUEMITSU Tetsuya, OTSUJI Taiichi

IEICE technical report　108　(376)　77-81　2009/01/07
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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InP-based high electron mobility transistors (HEMTs) have been developed for microwave and millimeter-wave ICs. By scaling down the gate length (L_g) their current gain cutoff frequency (f_T) has been improved. However, as L_g becomes smaller, f_T does not scale up as much as expected. To the improvement of a further RF characteristic in the future, we need to minimize a parasitic delay. In this paper, we paid attention to gate-to-source capacitance and report the influence of T-gate structure on parasitic delay.
エピタキシャルグラフェン電界効果トランジスター

KANG H-C., 唐澤宏美, 宮本優, 半田浩之, 末光哲也, 末光哲也, 吹留博一, 吹留博一, 末光眞希, 末光眞希, 尾辻泰一, 尾辻泰一

応用物理学会学術講演会講演予稿集　70th　(3)　2009
Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's

MAGOME Nobuhiro, NISHIMURA Takuya, KHMYROVA Irina, SUEMITSU Tetsuya, KNAP Wojtek, OTSUJI Taiichi

IEICE technical report　108　(369)　53-58　2008/12/12
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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Influence of fringing electric field due to nonideality of the gate-two-dimensional electron gas (2DEG) channel capacitance on fundamental resonant frequency of plasma waves in the high-electron mobility transistor (HEMT) channel was investigated. Cascaded transmission line (TL) equivalent circuit model was developed to represent the gated and ungated fringed regions of the 2DEG channel. Spatial distribution of sheet electron density in the fringed region of the 2DEG channel and expression for fundamental resonant frequency of plasma oscillation were obtained. Results of calculation and IsSpice simulation based on cascaded TL model show that fringing effects can be the cause of the fundamental plasma frequency reduction. The results obtained are in rather good agreement with experimental data.
Emission and detection using two dimensional plasma oscillations in nanometer transistors and their applications to terahertz imaging

EL FATIMY A., SUEMITSU T., OTSUJI T., MOUNAIX P., DELAGNES J. C., KNAP W., DYAKONOVA N.

IEICE technical report　108　(369)　47-52　2008/12/12
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We present recent results on terahertz emission/detection utilizing two-dimensional plasmons in different types of InGaAs/InP, GaAs/AlGaAs and GaN/AlGaN nanometric high electron mobility transistors. The emission frequencies correspond to the estimated characteristic plasma wave frequencies and the emission exhibits threshold behavior against the drain bias, indicating instability driven coherent self oscillation. For detection, gate lengths below 100nm in InGaAs/InP systems allow for a resonant voltage tunable detection at frequencies up to 3THz. By using those devices we demonstrate experimental evidence of the plasma wave imaging at room temperature. Presented devices will become efficient future detectors/sources for terahertz imaging especially if they are integrated in detector/source arrays.
Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure

HANDA Hiroyuki, HOSONO Yohei, TSUDA Yuki, MEZIANI Yahya Moubarak, SUEMITSU Tetsuya, OTSUJI Taiichi

IEICE technical report　107　(355)　45-50　2007/11/20
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We have fabricated the 2D plasmon resonant emitter which contains double grating gate structure and estimated its emission characteristics of terahertz electromagnetic wave. This device excites plasma vibrational quantum of electron concentrated inside of a two dimensional electron transit layer electrically, optically, and coherently. By using this oscillation, it can generate terahertz electromagnetic wave through antenna structure of dual interedigitated gate. There are some methods as excitation of plasmon like electrical instability excitation due to direct current bias or photo current injection, photomixing excitation, and femtosecond laser excitation. This report is mainly written about the result of terahertz electromagnetic wave characteristics by using self oscillation mode due to direct current bias and injection of direct photo current, given by FTIR.
0.15-μm dual-gate AlGaN/GaN HEMT mixers

SHIOJIMA Kenji, MAKIMURA Takashi, KOSUGI Toshihiko, SUEMITSU Tetsuya, SHIGEKAWA Naoteru, HIROKI Masanobu, YAKOYAMA Haruki

IEICE technical report　105　(524)　41-44　2006/01/12
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured the DC and up-conversion RF characteristics. A device with a T-shaped gate (0.15μm×300μm) exhibits a maximum transconductance of 40mS, an on-state breakdown voltage of over 30V, and off-state breakdown voltage of 86V. The maximum RF output power (P_<RFout>) is 17dBm, and the up-conversion gain is 7.5dB at a frequency of 10GHz when the bias point voltage is 30V. As the local frequency increases from 2 to 10GHz, P_<RFout> and the gain decrease by only 2 and 2.6dB, respectively. Shortening the gate was found to be effective in improving the frequency characteristics of a mixer at frequencies up to and including the X-band.
Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

SHIOJIMA Kenji, MAKIMURA Takashi, SUEMITSU Tetsuya, SHIGEKAWA Naoteru, HIROKI Masanobu, YOKOYAMA Haruki

IEICE technical report　105　(329)　43-46　2005/10/13
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphier wafers. The contact resistance limited and dispersed measured transconductance (g_m). The intrinsic g_m after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.
Evaluation of GaN Crystal Quality by using Sub-micron Schottky Contacts : Correlation between Defects and I-V Characteristics of Low-carrier Density n-GaN

SHIOJIMA Kenji, SUEMITSU Tetsuya

IEICE technical report. Electron devices　102　(294)　35-38　2002/08/23
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We directly evaluated the effect of dislocations on I-V characteristics of Au/Ni/n-GaN Schottky contacts. A sub-micrometer Schottky dot array was formed by electron beam lithography and I-V measurements were conducted using AFM with a. conductive probe. Neither mixed nor pure edge dislocations affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.
Fabrication and evaluation of short-gate AlGaN/GaN HEMTs

SHIOJIMA Kenji, SHIGEKAWA Naoteru, SUEMITSU Tetsuya

The Transactions of the Institute of Electrical Engineers of Japan. C　122　(8)　1240-1245　2002/08/01
Publisher: 電気学会
ISSN： 0385-4221
Fabrication and characterizations of AlGaN/GaN HEMTs with a buried p-layer

SHIOJIMA Kenji, SUEMITU Tetsuya, SHIGEKAWA Naoteru

The Transactions of the Institute of Electrical Engineers of Japan. C　122　(7)　1085-1088　2002/07/01
Publisher: 電気学会
ISSN： 0385-4221
Fabrication and evaluation of short-gate AlGaN/GaN HEMTs

SHIOJIMA Kenji, SHIGEKAWA Naoteru, SUEMITSU Tetsuya

IEICE technical report. Electron devices　101　(337)　61-66　2001/10/04
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We have fabricated short-gate AlGaN/GaN HEMTs by using electron beam lithography technique. The devices show good pinch-off characteristics, and typical parameters of g_m=195 mS/mm,f_T=26 GHz, F_<max> = 80 GHz were obtained. We have also conducted photoluminescence and electroluminescence(EL) measurements in order to clarify the carrier transport mechanism. It is found that a single peak in the EL spectrum due to the intraband transition of the channel electrons in the high field region at the drain edge.
Reliability Study of InP-Based HEMTs : Increases in Source and Drain Resistances

SUEMITSU Tetsuya, FUKAI Yoshino K., SUGIYAMA Hiroki, WATANABE Kazuo, YOKOYAMA Haruki

IEICE technical report. Electron devices　100　(547)　21-25　2001/01/10
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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The reliability of 0.1-μm-gate InP-based HEMTs was studied, focussing on how it is affected by the carrier supply layer material and gate recess structure. Bias and temperature (BT) stress tests revealed that fluorine-induced donor passivation in the gate recess region causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP (or InAlP) as the carrier supply layer material instead of InAlAs. On the other hand, drain resistance (R_d) increased due to carrier depletion in the drain ohmic region, which occurs not only in the recess region but also in the n^+-capped region between the gate recess and the drain electrode, which is also affected by hot-carrier-induced damage.
Fabrication of AlGaN/GaN HEMTs with buried p-layers

SHIOJIMA Kenji, SUEMITSU Tetsuya, SHIGEKAWA Naoteru

IEICE technical report. Electron devices　100　(369)　31-36　2000/10/12
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 2-μm-gate device showed good pinch-off characteristics, g_m of 55mS/mm, and breakdown voltage of 70〜90V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. The maximum f_T of 5.5 GHz was obtained. These results indicate the potential of p-layer insertion into GaN-based FETs.
Characterization of GaN crystal quality by using sub-micrometer Schottky contacts : correlation between I-V characteristics and dislocations

SHIOJIMA Kenji, SUEMITSU Tetsuya, OGURA Mitsumasa

IEICE technical report. Electron devices　100　(369)　19-24　2000/10/12
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We directly evaluated the effect of dislocations on I-V characteristics of Au/Ni/n-GaN Schottky contacts. A sub-micrometer Schottky dot array was formed by electron beam lithography and I-V measurements were conducted using AFM with a conductive probe. Neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.
DC and RF performances of AlGaN/GaN HEMTs with buried p-1ayers

Shiojima Kenji, Suemitsu Tetsuya, Shigekawa Naoteru

Proceedings of the Society Conference of IEICE　2000　(2)　157-158　2000/09/07
Publisher: The Institute of Electronics, Information and Communication Engineers
Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems

UMEDA Yotaro, ENOKI Takatomo, OTSUJI Taiichi, SUEMITSU Tetsuya, YOKOYAMA Haruki, ISHII Yasunobu

IEICE Trans. Electron　82　(3)　409-418　1999/03/25
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0916-8524

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This paper presents the technologies for over-40-Gbit/s operation of InP-based HEMT ICs for future optical communication systems. High-speed interconnection using low-permittivity benzocyclobutene (BCB) film as an inter-layer insulator decreases interconnection delay and results in high-speed operation of digital circuits. A static frequency divider and a 2:l multiplexer using this novel interconnection demonstrate 49-GHz and 80-Gbit/s operation, respectively. Ultrahigh-speed digital/analog ICs fabricated using the HEMTs were used in 40Gbit/s optical transmission experiment and showed good bit-error-rate performance. A novel two-step recess process for gate recess etching considerably improves the performance of InP-based HEMTs and is found to be promising for future ultrashort-gate devices.
30-nm-Gate InAlAs/InGaAs HEMTs Lattice-Matched to InP Substrates and Their RF Characteristics

SUEMITSU Tetsuya, ISHII Tetsuyoshi, YOKOYAMA Haruki, UMEDA Yohtaro, ENOKI Takatomo, ISHII Yasunobu, TAMAMURA Toshiaki

IEICE technical report. Electron devices　98　(517)　15-20　1999/01/20
Publisher: The Institute of Electronics, Information and Communication Engineers

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The fabrication and the device characteristics of the InP-based HEMTs with a 30-nm gate are reported. A fullerene-incorporated nanocomposite resist is used in electron beam lithography to achieve such a small gate. In addition, the two-step-recess gate technology is used to minimize the effect of the extension of the gate metal. The maximum of the cutoff frequency of the 30-nm-gate HEMTs is 350 GHz, which is one of the highest ever reported for any kind of transistor.

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Books and Other Publications 2

Comprehensive Semiconductor Science and Technology

P. Bhattacharya, R. Fornari, H. Kamimura

Elsevier Amsterdam　2011/04

ISBN: 9780444531438
Handbook of Terahertz Technology

Ed. Terahertz Technology Forum

NGT Corporation, Japan　2007/12/01

Presentations 157

High Electron Mobility Transistors for Ultimate High-Frequency Electron Devices Invited

Tetsuya Suemitsu

2021 General Meeting of IEEE Sendai Section　2021/04/22
N-polar GaN HEMTs: Current status and future prospects Invited

Tetsuya Suemitsu

112nd Meeting of JSPS Wide-bandgap Optical and Electrical Devices Committee　2019/03/15
Development of GaN power devices: Approaches from material, device structure, and process Invited

Tetsuya Suemitsu

203rd Meeting of JSAP Silicon Technology Division, Tokyo, Nov. 16　2017/11/16
High-speed transistors: Prospect to terahertz (Tutorial review) Invited

Tetsuya Suemitsu

IEICE Spring Meeting　2008/03/19
Nitride Semiconductor Transistors: Materials, Process, and Devices Invited

Tetsuya Suemitsu

44th IMSI-LTB3D Workshop　2023/07/21
Account of my experience on an elevation to Fellow Invited

Tetsuya Suemitsu

2021 2nd Webinar for prospective IEEE Fellows　2021/12/09
Introduction of grating source contact to UTC-PD-integrated HEMT photonic double-mixer

D. Nakajima, K. Nishimura, Y. Omori, T. Hosotani, K. Iwatsuki, T. Suemitsu, T. Otsuji, A. Satou

IEICE Society Meeting　2021/09
A study on precise extraction of parasitic resistances in InGaAs HEMTs

Keigo Yaguchi, Tomotaka Hosotani, Yotaro Umeda, Kyoya Takano, Tetsuya Suemitsu, Akira Satou

IEICE Tech. Report　2021/01
Effective Schottky barrier height model for Ga- and N-polar GaN by polarization-induced charges with finite thickness

T. Suemitsu, I. Makabe

67th JSAP Spring Meeting, Tokyo, Mar. 12-15　2020/03
Photovoltaic output from the gate electrode of a grating-gate plasmonic THz detector

T. Negoro, T. Saito, M. Suzuki, T. Hosotani, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, T. Otsuji, A. Satou

67th JSAP Spring Meeting, Tokyo, Mar. 12-15　2020/03
Efficiency improvement of photonic double-mixing in UTC-PD-integrated HEMTs by reduction of photo-absorption layer area

K. Nishimura, Y. Omori, T. Hosotani, K. Iwatsuki, T. Suemitsu, T. Otsuji, A. Satou

67th JSAP Spring Meeting, Tokyo, Mar. 12-15　2020/03
2D Nanoantennas for Controlling Polarization Characteristics of A Grating-Gate Plasmonic THz Detector

M. Suzuki, T. Hosotani, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, T. Otsuji, A. Satou

IEICE Tech. Report　2018/12/18
Mapping of neutral-beam etching induced damages on GaN surfaces using scanning internal photoemission microscopy

K. Shiojima, T. Suemitsu, T. Ozaki, S. Samukawa

79th JSAP Fall Meeting, Nagoya, Sep. 18-21, 2018　2018/09
Reverse bias annealing in N-polar GaN MIS-HEMTs

T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka

79th JSAP Fall Meeting, Nagoya, Sep. 18-21, 2018　2018/09
Optical-to-MMW carrier-frequency down-conversion by InP-HEMT

Y. Omori, T. Hosotani, T. Otsuji, K. Iwatsuki, T. Suemitsu, K. Higuma, J. Ichikawa, T. Sakamoto, N. Yamamoto, A. Satou

IEICE Technical Report　2017/12
Optimization in wireless power transmission with electromagnetic wave for small terminal

Y. Koike, Y. Umeda, T. Suemitsu

2017 IEICE Society Meeting, Tokyo, SEP 12-15　2017/09/13
Threshold voltage engineering of recessed MIS-gate N-polar GaN HEMTs

K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka

78th JSAP Fall Meeting, Fukuoka, Sep. 5-8　2017/09/07
N-polar GaN MIS-HEMTs with flat interface grown by optimized MOVPE

K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka

IEICE Technical Report　2017/05/26
Influence of slant field plates on electron velicity in InGaAs-HEMTs

T. Hosotani, T. Otsuji, T. Suemitsu

64th JSAP Spring Meeting, Yokohama, Mar 14-17　2017/03/16
Reduced gate leakage current in N-polar GaN MIS-HEMTs

K. Prasertsuk, A. Miura, S. Tanaka, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka

64th JSAP Spring Meeting, Yokohama, Mar 14-17　2017/03/15
Influence of gate recess in AlGaN/GaN HEMTs by neutral beam etching

Y. Watamura, F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, S. Samukawa, T. Otsuji, T. Suemitsu

64th JSAP Spring Meeting, Yokohama, Mar 14-17　2017/03/14
直列アレイ化とレンズ集積による非対称二重格子ゲート高電子移動度トランジスタのテラヘルツ波受光効率向上

細谷友崇, 糟谷文月, 谷口弘樹, 渡辺隆之, 末光哲也, 尾辻泰一, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 石橋忠夫, 清水誠, 佐藤昭

信学技報　2016/12/19
Extraction of paracitic capacitance in InGaAs HEMTs with slant field plates

T. Hosotani, T. Otsuji, T. Suemitsu

IEICE Society Meeting, Sapporo, Sep. 20-23　2016/09/20
Impact of neutral beam etching on isolation leakage current and breakdown voltage in AlGaN/GaN HEMTs

F. Hemmi, C. Thomas, Y-C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, T. Otsuji, T. Suemitsu

77th JSAP Fall Meeting　2016/09/16
Sub-Terahertz/Terahertz Devices Based on Two-Dimensional Plasmons in Transistor Structures

2016/08/01
Sub-Terahertz/Terahertz Devices Based on Two-Dimensional Plasmons in Transistor Structures

2016/08
Suppression of isolation leakage current in AlGaN/GaN HEMTs by neutral-beam etching

F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, T. Otsuji, T. Suemitsu

63rd JSAP Spring Meeting, Tokyo, Mar. 19-22　2016/03/19
InGaAs-HEMTs with two-step recessed gates by Ar plasma etching

T. Hosotani, T. Otsuji, T. Suemitsu

63rd JSAP Spring Meeting, Tokyo, Mar. 19-22　2016/03/19
Improvement of light receiving efficiency of asymmetric dual-grating-gate plasmonic THz-wave detectors by array configuration and integration with hyper-hemispherical silicon lens

T. Taniguchi, F. Kasuya, T. Watanabe, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, A. Satou

63rd JSAP Spring Meeting, Tokyo, Mar. 19-22　2016/03/19
グラフェンFETにおける真性トランジスタパラメータ抽出用モデルの評価

満塩純希, 玉虫元, 菅原健太, 佐藤昭, 末光哲也, 吹留博一, 末光眞希, 尾辻泰一

第63回応用物理学会春季学術講演会予稿集　2016/03/19
Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network

K. Sugawara, G. Tamamushi, A. Dobroiu, T. Yoshida, T. Suemitsu, H. Fukidome, M. Suemitsu, R. Victor, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, T. Otsuji

IEICE Tech. Report　2016/01/22
非対称性指数向上とアレイ化による非対称二重格子ゲートHEMTの検出感度向上

糟谷文月, 川﨑鉄哉, 渡辺隆之, Stephane Boubanga Tombet, 末光哲也, 尾辻泰一, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 佐藤昭

2015年電子情報通信学会総合大会予稿集　2015/09/09
C-10-3 Millimeterwave opto-electric mixer by graphene channel FET and InGaAs-HEMT

Sugawara Kenta, Kawasaki Tetsuya, Tamamushi Gen, Suemitsu Maki, Fukidome Hirokazu, Kani Junichi, Terada Jun, Kuwano Shigeru, Iwatsuki Katsumi, Suemitsu Tetsuya, Otsuji Taiichi

Proceedings of the Society Conference of IEICE　2015/08/25
Design of a 60 GHz InGaAs HEMT class-F power amplifier with reactive negative feedback

K. Watanabe, Y. Umeda, T. Yoshida, T. Suemitsu

IEICE Technical Report　2015/04/16
HIgh carrier mobility graphene-channel FET using SiN gate stack

G. Tamamushi, K. Sugawara, M.B. Hussin, T. Suemitsu, R. Suto, H. Fukidome, M. Suemitsu, T. Otsuji

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　2015/03/14
Impact on drain deplation region in InAlN/GaN HEMTs with slant field plates

N. Yasukawa, S. Hatakeyama, T. Yoshida, T. Otsuji, T. Suemitsu

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　2015/03/13
Sub-THz mixer application of graphene channel FET

K. Sugawara, T. Kawasaki, M.B. Hussin, G. Tamamushi, M. Suemitsu, H. Fukidome, J. Kani, J. Terada, S. Kuwano, K. Iwatsuki, T. Suemitsu, T. Otsuji

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　2015/03/13
Frequency characteristics of terahertz detection by an asymmetric dual-grating-gate HEMT

A. Satou, S. Boubanga=Tombet, T. Watanabe, T. Kawasaki, F. Kasuya, T. Suemitsu, D. V. Fateev, V. V. Popov, Y. Minamide, H. Ito, D. Coquillat, W. Knap, G. Ducournau, Y. M. Meziani, T. Otsuji

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　2015/03/12
Mapping of degradation of AlGaN/GaN HEMTs

S. Yamamoto, S. Hatakeyama, T. Suemitsu, K. Shiojima

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　2015/03/12
InGaAs-HEMTs with slant field plate structures

T. Yoshida, S. Hatakeyama, N. Yasukawa, T. Otsuji, T. Suemitsu

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　2015/03/11
Improved graphene FETs with low contact resistance

T. Koiwa, T. Oka, T. Suemitsu, T. Otsuji, T. Uchino

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　2015/03/11
非対称二重格子ゲート高電子移動度トランジスタを用いたプラズモニックテラヘルツ検出の広帯域特性

佐藤昭, Stephane Boubanga Tombet, 渡辺隆之, 川﨑鉄哉, 末光哲也, Denis V. Fateev, Vyacheslav V. Popov, 南出泰亜, 伊藤弘昌, Dominique Coquillat, Wojciech Knap, Guillaume Ducournau, 尾辻泰一

信学技報　2014/12/22
Millimeterwave-photomixing by InGaAs channel HEMTs and graphene channel FETs

Kawasaki Tetsuya, Yoshida Tomohiro, Sugawara Kenta, Dobroiu Adrian, Watanabe Takayuki, Sugiyama Hiroki, Wako Hiroyuki, Kani Jun-ichi, Terada Jun, Kuwano Shigeru, Ago Hiroki, Kawahara Kenji, Iwatsuki Katsumi, Suemitsu Tetsuya, Otsuji Taiichi

IEICE Tech. Report　2014/12/22

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We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electron mobility transistors (HEMTs) and graphene channel field effect transistors (FETs) which we fabricated. The dual comb IR laser beam having differential frequency 12.5, 25.0 or 37.5 GHz was introduced to the channel area from the backside of the device and we measured the photoresponse spectrum of the downconverted output. The maximum photoresponse of the InGaAs channel HEMT was obtained at the threshold voltage. We also obtained the photoresponse of the graphene channel FET in spite of its poor current-gain cutoff frequency of 2GHz.
RF characterization of AlGaN/GaN HEMTs with slant field plates

S. Hatakeyama, K. Kobayashi, T. Yoshida, T. Otsuji, T. Suemitsu

75th JSAP Fall Meeting, Sapporo, Sep. 16-20　2014/09/19
Impact of gate delay time in InGaAs-HEMTs operated in a class-F amplifier

T. Yoshida, M. Oyama, K. Watanabe, Y. Umeda, T. Otsuji, T. Suemitsu

75th JSAP Fall Meeting, Sapporo, Sep. 16-20　2014/09/17
Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN

K. Kobayashi, S. Hatakeyama, T. Yoshida, Y. Yabe, D. Piedra, T. Palacios, T. Otsuji, T. Suemitsu

61st JSAP Spring Meeting, Sagamihara, Mar. 17-20　2014/03/19
Frequency dispersion of gm in InAlN/GaN HEMTs and AlGaN/GaN HEMTs

S. Hatakeyama, K. Kobayashi, T. Yoshida, T. Otsuji, T. Suemitsu

61st JSAP Spring Meeting, Sagamihara, Mar. 17-20　2014/03/18
Milimeterwave-photomixing by graphene channel FET

K. Sugawara, T. Eto, T. Kawasaki, M. B. Hussin, H. Wako, T. Suemitsu, T. Otsuji, H. Ago, K. Kawahara, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto

61st JSAP Spring Meeting, Sagamihara, Mar. 17-20　2014/03/17
60-GHz-Band Class-F amplifier with InGaAs HEMT

M. Oyama, T. Kishi, Y. Umeda, T. Yoshida, T. Suemitsu

Technical Report of IEICE　2014/03/04
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu

Solid-State Electronics　2014

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The impact of the stem height of T-gate electrodes on the parasitic gate delay time in InGaAs high electron mobility transistors (HEMTs) is studied. Since T-gates with higher stem height make the parasitic gate capacitance smaller, the higher stem height is expected to minimize the parasitic gate delay. However, a systematic study using the devices with different stem height of T-gates reveals that the parasitic gate delay time decreases with the parasitic gate capacitance only at a drain voltage around the knee voltage and it becomes less sensitive to the parasitic capacitance by the T-gate when the device is operated in the deep saturation region at high drain bias voltage. This result suggests a design strategy for T-gate electrodes so that the tradeoff between the gate resistance and gate capacitance must be considered seriously in the devices for low-voltage applications, while one has more flexibility to use the T-gate electrode with a large head in the devices for high-voltage applications.
Ultrahigh Sensitive and Frequency-Tunable Terahertz Detection by Asymmetric Dual-Grating-Gate HEMTs

Kawasaki Tetsuya, Hatakeyama Shinya, Kurita Yuki, Ducournau Guillaume, Coquillat Dominique, Kobayashi Kengo, Satou Akira, Meziani Yahya M., Popov Vyacheslav. V., Knap Wojciech, Suemitsu Tetsuya, Otsuji Taiichi

IEICE Tech. Report　2013/12/16

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We report on ultrahigh sensitive and frequency-tunable terahertz (THz) detectors by our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) based on hydrodynamic nonlinearities of two-dimensional (2D) plasmons. We obtained the record-breaking responsivities exceeding 20 kV/W at 200 GHz and 292 GHz at room temperature by contributing nonlinear rectification response and excellent coupling efficiency provided by the structure. In addition, we successfully observed the resonant-type behavior at a cryogenic temperature. This indicates the potentiality of frequency-tunable ultrahigh-sensitive THz detection.
Effect of H plasma treatment on p-GaN Schottky diodes

T. Aoki, T. Yoshida, T. Suemitsu, N. Kaneda, T. Mishima, K. Shiojima

74th JSAP Fall Meeting, Kyoto, Sep. 17-20　2013/09/20
A distributed oscillator using InGaAs HEMTs

Tomoko Segawa, Masashi Oyama, Yohtaro Umeda, Tomohiro Yoshida, Tetsuya Suemitsu

IEICE Society Conference, Fukuoka, Sep. 17-20　2013/09/17
Fabrication of InGaAs-HEMTs with 50-nm T-gates by multi-layer SiCN molds

T. Yoshida, K. Kobayashi, T. Otsuji, T. Suemitsu

60th JSAP Spring Meeting, Kanagawa, Mar. 27-30　2013/03/27
Instability-driven plasmonic terahertz monochromatic coherent emission from an asymmetric dual-grading gate HEMT with a resonant-enhanced cavity structure

T. Watanabe, T. Fukushima, Y. Kurita, A. Satou, T. Suemitsu, T. Otsuji

60th JSAP Spring Meeting, Kanagawa, Mar. 27-30　2013/03/27
Fabrication of tilted field plate for AlGaN/GaN HEMT by multi-layer SiCN molds

K. Kobayashi, T. Yoshida, S. Hatakeyama, T. Otsuji, T. Suemitsu

IEICE Spring Meeting, Gifu, Mar. 19-22　2013/03/19
InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds

T. Yoshida, K. Kobayashi, T. Otsuji, T. Suemitsu

IEICE Technical Report　2013/01/17
AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks

K. Kobayashi, T. Yoshida, T. Otsuji, R. Katayama, T. Matsuoka, T. Suemitsu

IEICE Technical Report　2013/01/17
Graphene/SiC/Si back-gated FETs with different SiC layer thickness

T. Eto, S. Takabayashi, S. Sanbonsuge, S. Inomata, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji

73rd JSAP Fall Meeting, Matsuyama, Japan, Sep. 11-14　2012/09/13
The effect of H2 annealing in MIS-gate of AlGaN/GaN HEMTs

K. Kobayashi, T. Yoshida, T. Otsuji, R. Katayama, T. Matsuoka, T. Suemitsu

73rd JSAP Fall Meeting, Matsuyama, Japan, Sep. 11-14　2012/09/11
Study on optimum design of T-gates in InGaAs HEMTs by electrostatic field analysis

T. Yoshida, A. Satou, T. Otsuji, T. Suemitsu

73rd JSAP Fall Meeting, Matsuyama, Japan, Sep. 11-14　2012/09/11
Graphene FET with Diamondlike Carbon Dielectrics

TAKABAYASHI Susumu, YANG Meng, OGAWA Shuichi, HAYASHI Hiroyuki, KURITA Yuki, TAKAKUWA Yuji, SUEMITSU Tetsuya, OTSUJI Taiichi

IEICE technical report. Electron devices　2012/07/19

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A graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film is presented (DLC-GFET). The DLC film was formed 'directly' onto the graphene channel without forming passivation interlayers using original our photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by photoemission from the sample with quite low electric power, minimizing plasma damage to the graphene. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral point (Dirac voltage). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick DLC gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to exhibit an excellent radio-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from an oxygen species like water adsorbed at the DLC/graphene interface. Based on the results, the authors propose a modulation-doped DLC/graphene structure with δ-doped impurity atoms/molecules.
Graphene-channel FET with a Diamondlike Carbon Top-gate Dielectric Film

S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, M. Suemitsu, T. Suemitsu, T. Otsuji

IEICE Spring Meeting, Okayama, Japan, Mar. 20-23　2012/03/23
AlGaN/GaN HEMTs with SiCN Gate Stack

M. Kano, K. Kobayashi, T. Yoshida, T. Otsuji, R. Katayama, T. Matsuoka, T. Suemitsu

59th JSAP Spring Meeting, Tokyo, Japan, Mar. 15-18　2012/03/18
T-gate fabrication process to control cross-sectional shape using multi-layer SiCN mold

T. Yoshida, M. Kano, T. Otsuji, T. Suemitsu

59th JSAP Spring Meeting, Tokyo, Japan, Mar. 15-18　2012/03/18
Control of Channel-doping of a Graphene-channel FET by a Diamondlike Carbon Top-gate Dielectric Film

S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, M. Suemitsu, T. Suemitsu, T. Otsuji

59th JSAP Spring Meeting, Tokyo, Japan, Mar. 15-18　2012/03/17
Graphene field effect transistor using a novel self-aligned technique for high speed applications

G.-H. Park, M.-H. Jung, S. Zen, H. Fukidome, T. Yoshida, T. Suemitsu, T. Otsuji, M. Suemitsu

59th JSAP Spring Meeting, Tokyo, Japan, Mar. 15-18　2012/03/15
Gate delay analysis of T-gate InGaAs HEMTs fabricated using HMDS-SiN mold

T. Yoshida, K. Akagawa, T. Otsuji, T. Suemitsu

72nd JSAP Fall Meeting, Yamagata, Japan, Aug. 30-Sep. 2　2011/08/31
Synthesis of DLC Films on Si substrates by Photoemission assisted plasma enhanced CVD

M. Yang, S. Ogawa, S. Takabayashi, T. Suemitsu, T. Otsuji, Y. Takakuwa

72nd JSAP Fall Meeting, Yamagata, Japan, Aug. 30-Sep. 2　2011/08/31
Graphene channel modulation by dual-gate operation for high-speed device applications

M.-H. Jung, S. Zen, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu

72nd JSAP Fall Meeting, Yamagata, Japan, Aug. 30-Sep. 2　2011/08/31
Sub-terahertz imaging with InP-based HEMTs

T. Watanabe, K. Akagawa, Y. Tanimoto, W. Knap, D. Coquillat, F. Teppe, T. Suemitsu, T. Otsuji

58th JSAP Spring Meeting, Kanagawa, Japan　2011/03
Graphene FETs with HMDS-SiN gate stack

M. Kubo, T. Fukushima, H.-C. Kang, K. Akagawa, T. Yoshida, R. Takahashi, H. Handa, M.-H. Jung, S. Takabayashi, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

58th JSAP Spring Meeting, Kanagawa, Japan　2011/03
Graphene FETs on Si(001) substrates

M. Kubo, H. Handa, H.-C. Kang, T. Fukushima, R. Takahashi, S. Takabayashi, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

IEICE Spring Meeting, Tokyo, Japan　2011/03
Graphene FET with a diamonolike carbon gate dielectric

S. Takabayashi, S. Ogawa, Y. Takakuwa, H.-C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji

58th JSAP Spring Meeting, Kanagawa, Japan　2011/03
Fabrication of T-gate electrodes using HMDS-SiN mold

K. Akagawa, T. Yoshida, T. Otsuji, T. Suemitsu

58th JSAP Spring Meeting, Kanagawa, Japan　2011/03
二次元プラズモンおよびグラフェンによるテラヘルツ波発生 Invited

尾辻泰一, 佐藤昭, 末光哲也, Maxim Ryzhii, Victor Ryzhii

春季第58回応用物理学関係連合講演会予稿集　2011/03
Chemical bonding at graphene/Pt interface

S. Takabayashi, R. Takahashi, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

71st JSAP Fall Meeting, Nagasaki　2010/09/15
Influence of Hydrogen annealing on electrical property of epitaxial graphene

M. Kubo, H.-C. Kang, R. Takahashi, H. Handa, S. Takabayashi, H. Fukidome, T. Suemitsu, T. Otsuji

71st JSAP Fall Meeting, Nagasaki　2010/09/15
[Invited] Graphene Channel FET: A New Candidate for High-Speed Devices Invited

Tetsuya Suemitsu

IEICE Tech. Report, Tokyo　2010/06/30
Evaluation of specific contact resistivity of ohmic electrodes fabricated on graphene on Si substrates

H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, M. Suemitsu, T. Otsuji

57th JSAP Spring Meeting, Tokai Univ.　2010/03/20
Top-gate eptaxial graphene FETs on Si substrates

M. Kubo, H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

57th JSAP Spring Meeting, Tokai Univ.　2010/03/20
Correlation between gate electrode and parasitic capacitance in HEMTs

Keisuke Akagawa, Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji

57th JSAP Spring Meeting, Tokai Univ.　2010/03/19
Graphene-channel FET: A new candidate for high-speed devices (Invited) Invited

Tetsuya Suemitsu

IEICE Spring Meeting　2010/03/16
Terahertz spectroscopy with multi-chip plasmon-resonant emitters

T. Watanabe, T. Komori, T. Suemitsu, T. Otsuji

IEICE Technical Reports　2009/11/30
SiN insulator film deposited by plasma-enhanced CVD using liquid source

Keisuke Akagawa, Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji

70th JSAP Fall Meeting, Toyama　2009/09/10
Comparative study of gate delay analysis model on InGaAs-channel HEMTs

Shunsuke Fukuda, Kohei Horiike, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji

70th JSAP Fall Meeting, Toyama　2009/09/09
Epitaxial graphene field effect transistors

H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

70th JSAP Fall Meeting, Toyama　2009/09/08
Terahertz emitters by means of 2D plasmon resonance

M. Kubo, T. Komori, Y. Tsuda, H.B. Chen, T. Suemitsu, T. Otsuji

IEICE Society Meeting　2009/09
Terahertz spectroscopy with plasmon-resonant emitters

M. Kubo, Y. Tsuda, T. Komori, H.B. Chen, T. Suemitsu, T. Otsuji

70th JSAP Fall Meeting, Toyama　2009/09
Enhanced THz emission from plasmon-resonant emitters

T. Watanabe, A. El Fatimy, T. Komori, T. Suemitsu, T. Otsuji

70th JSAP Fall Meeting, Toyama　2009/09
Room temperature THz emission by means of InP-based 2D plasmon-resonant emitters

T. Komori, A. El Moutaoukil, T. Watanabe, K. Horiike, T. Suemitsu, T. Otsuji

70th JSAP Fall Meeting, Toyama　2009/09
Application of Plasmon-Resonant Microchip Emitters to Broadband Terahertz Spectroscopic Measurement

T. Komori, Y. Tsuda, T. Suemitsu, T. Otsuji

Tohoku District Joint Convention of Electrical and Information Engineers　2009/08
Transistor operation of epitaxial graphene on Si substrates

H.C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, M. Suemitsu, T. Otsuji

56th JSAP Spring Meeting　2009/03
[Invited Paper] Eptaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices Invited

T. Otsuji, T. Suemitsu, H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, M. Suemitsu, E. Sano, M. Ryzhii, V. Ryzhii

IEICE Tech. Report, Sapporo　2009/02/26
Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs

K. Horiike, S. Fukuda, K. Akagawa, T. Suemitsu, T. Otsuji

IEICE Tech. Report　2009/01/15
Epitaxial graphene on Si substrates: Applications to electron devices

T. Otsuji, T. Suemitsu, H.C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, M. Suemitsu, E. Sano, M. Ryzhii, V. Ryzhii

IEICE Technical Reports　2009/01
Emission and detection using two dimensional plasma oscillations in nanometer transistors and their applications to terahertz imaging

A. El Fatimy, T. Suemitsu, T. Otsuji, P. Mounaix, J.C. Delagnes, W. Knap, N. Dyakonov

IEICE Tech. Report　2008/12/20
Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's

N. Magome, T. Nishimura, I. Khmyrova, T. Suemitsu, W. Knap, T. Otsuji

IEICE Tech. Report　2008/12/20
Influence of T-gate structure on parasitic delay of short-gate InGaAs HEMTs

Kohei Horiike, Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji

69th JSAP Fall Meeting　2008/09/04
Intrinsic delay analysis on sub-100-nm In_0.7Ga_0.3As HEMT

Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji, Dae-Hyun Kim, Jesus A. del Alamo

69th JSAP Fall Meeting　2008/09/04
Impact of parasitic delay in sub-100-nm-gate InGaAs HEMTs

S. Fukuda, T. Suemitsu, T. Otsuji, D.-H. Kim, J. A. del Alamo

Tohoku District Joint Convention of Electrical and Information Engineers　2008/08
HEMT構造2次元プラズモン共鳴型エミッターからのテラヘルツ電磁波放射

半田大幸, 細野洋平, 津田祐樹, Yahya. M. Meziani, 末光哲也, 尾辻泰一

信学技報, Vol. 107, No. 355, ED2007-195, pp. 45-50, 仙台　2007/11
Novel plasmon-resonant terahertz-wave emitter using double-decked HEMT structure

Yahya M. Meziani, Tetsuya Suemitsu, Yohei Hosono, Mitsuhiro Hanabe, Taiichi Otsuji, Eiichi Sano

第1回JSAP-THz研・IEICE-THz研合同研究会, Jul. 5-7, 2007, 沖縄　2007/07
Terahertz-wave emission stimulated by photo-induced plasmon insta¬bility in double-decked InGaP/InGaAs/GaAs HEMT structures

Yohei Hosono, Yahya M. Meziani, Mitsuhiro Hanabe, Tetsuya Sue¬mitsu, Taiichi Otsuji, Eiichi Sano

第26回電子材料シンポジウム，pp. 303-304, Jul. 4-6, 2007，滋賀　2007/07
Rump session: Materials selection from the viewpoint of electronic-device applications

第26回電子材料シンポジウム　2007/07/04
高速光クロックトランジスタアレイとその非同期光パケット処理への応用

浦田涼平, 高橋亮, 中原達志, 末光哲也, 鈴木博之

第54回応用物理学関係連合講演会，東京　2007/03
非同期任意長光パケットに対するエラーフリーラベル交換動作

浦田涼平, 高橋亮, 中原達志, 末光哲也, 鈴木博之

電子情報通信学会ソサイエティ大会（2006/09），金沢　2006/09
光クロックトランジスタアレイを用いた40-Gb/s光シリアル-電気パラレル双方向変換器

浦田涼平, 高橋亮, 末光哲也, 中原達志, 高畑清人, 鈴木博之

第53回応用物理学関係連合講演会 (2006/03)，東京，24a-Y-1　2006/03
ナイトライド系表面弾性波デバイスにおける特性変調

重川直輝, 西村一巳, 横山春喜, 末光哲也, 宝川幸司

第53回応用物理学関係連合講演会 (2006/03)，東京，24a-ZE-23　2006/03
0.15-µm dual-gate AlGan/GaN HEMT mixer

K. Shiojima, T. Makimura, T. Kosugi, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

IEICE Tech. Report　2006/01/19
Correlation between crystal quality and DC/RF characteristics of short-gate AlGaN/GaN HEMTs

K. Shiojima, T. Makimuara, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

IEICE Tech. Report　2005/10/13
InAlAsSb/InGaAs HEMTの特性評価

末光哲也, 横山春喜, 杉山弘樹

第66回応用物理学関係連合講演会 (2005/09), 徳島 7a-W-7　2005/09
0.15µmデュアルゲートAlGaN/GaN HEMTミキサー

塩島謙次, 牧村隆司, 末光哲也, 重川直輝, 廣木正伸, 横山春喜

第66回応用物理学会学術講演会 (2005/09)，徳島，8p-W-15　2005/09
短ゲートAlGaN/GaN HEMTのRF特性におけるT字ゲート構造の影響

塩島謙次, 牧村隆司, 小杉敏彦, 末光哲也, 重川直輝, 廣木正伸, 横山春喜

第66回応用物理学会学術講演会 (2005/09)，徳島，8p-W-14　2005/09
AlGaN/GaN HEMT基板の比較とDC,RF特性への影響(2)

塩島謙次, 牧村隆司, 末光哲也, 重川直輝, 横山春喜, 廣木正伸

第52回応用物理学関係連合講演会 (2005/03)，東京　2005/03
FETの真性遅延時間の抽出(2): GaN HEMT遅延時間の解析

末光哲也, 塩島謙次, 牧村隆司, 重川直輝

第65回応用物理学関係連合講演会 (2004/09), 仙台 2a-ZS-2　2004/09
FETの真性遅延時間の抽出(1): InP HEMT遅延時間の解析

末光哲也

第65回応用物理学関係連合講演会 (2004/09), 仙台 3a-ZS-3　2004/09
微細HEMTにおける特性ばらつきと短チャネル効果の関係

末光哲也

第64回応用物理学関係連合講演会 (2003/09), 福岡 1a-P7-3　2003/09
微小ショットキー電極を用いたGaN結晶の評価 --低キャリアn-GaNの結晶欠陥とI-V特性との相関--

塩島謙次, 末光哲也

電子情報通信学会電子デバイス研究会(2002/08)　2002/08
AlGaN/GaN構造における熱処理によるシート抵抗の変化

塩島謙次, 重川直輝, 末光哲也

第49回応用物理学関係連合講演会 (2002/03)　2002/03
高バイアスAlGaN/GaN HEMTの光学的評価

重川直輝, 塩島謙次, 末光哲也

第49回応用物理学関係連合講演会 (2002/03)　2002/03
短ゲートAlGaN/GaN HEMTの作製と電気的・光学的評価

塩島謙次, 重川直輝, 末光哲也

電子情報通信学会電子デバイス研究会(2001/10), ED2001-136, pp. 61-66　2001/10
0.1µｍクラスAlGaN/GaN HEMTの作製と評価

塩島謙次, 末光哲也, 重川直輝

電気学会電子・情報・システム部門大会 (2001/09), TC10-6, pp. I-83-84　2001/09
0.1µｍ級ゲートAlGaN/GaN HEMTの作製

塩島謙次, 末光哲也, 重川直輝

第62回応用物理学会学術講演会 (2001/09) 13a-ZF-6　2001/09
AlGaN/GaN HEMTのエレクトロルミネッセンス

重川直輝, 塩島謙次, 末光哲也

第62回応用物理学会学術講演会 (2001/09) 13a-ZF-11　2001/09
InP系HEMTにおけるドレイン抵抗の通電劣化 (2)

末光哲也, 深井佳乃, 横山春喜

第48回応用物理学関係連合講演会 (2001/03) 28p-YC-4　2001/03
微小GaNショットキー接触のI-V特性(2) - 低キャリア濃度基板を用いた実験

塩島謙次, 末光哲也, 小椋充将

第48回応用物理学関係連合講演会 (2001/03) 28a-ZA-10　2001/03
InP系HEMTの信頼性評価: ソース抵抗及びドレイン抵抗の変動

末光哲也, 深井佳乃, 杉山弘樹, 渡辺和夫, 横山春喜

電子情報通信学会電子デバイス研究会 (2001/01) ED2000-222, p. 21-25　2001/01
InAlAs/InGaAs HEMTにおけるドレインコンダクタンス周波数分散現象の解析

小杉敏彦, 末光哲也, 榎木孝知

電子情報通信学会電子デバイス研究会(2001/01), ED2000-221, pp. 15-19　2001/01
HEMTにおける光応答特性

綱島聡, 木村俊二, 楢原浩一, 末光哲也, 佐野栄一

電子情報通信学会電子デバイス研究会(2000/11), ED2000-179, pp. 7-12　2000/11
埋め込みp層を有したAlGaN/GaN HEMTのDC，及びRF特性

塩島謙次, 末光哲也, 重川直輝

電子情報通信学会秋季大会(2000/10)　2000/10
微小GaNショットキー接触によるGaN結晶の評価 - 転位とI-V特性との相関 -

塩島謙次, 末光哲也, 小椋充将

電子情報通信学会電子デバイス研究会(2000/10), ED2000-165, pp. 19-24　2000/10
チャネル直下に埋め込みp層を有したAlGaN/GaN HEMTのDC，及びRF特性

塩島謙次, 末光哲也, 重川直輝

電子情報通信学会電子デバイス研究会(2000/10), ED2000-167, pp. 31-36　2000/10
InP系HEMTにおけるドレイン抵抗の通電劣化

末光哲也, 深井佳乃, 横山春喜

第61回応用物理学会学術講演会 (2000/09) 3a-ZQ-8　2000/09
InAlP電子供給層挿入によるInP-HEMTの信頼性向上

深井佳乃, 末光哲也, 牧村隆, 横山春喜

第61回応用物理学会学術講演会 (2000/09) 3a-ZQ-9　2000/09
InP-HEMT構造へのフッ素混入

杉山弘樹, 末光哲也, 渡辺和夫, 深井佳乃, 小林隆

第61回応用物理学会学術講演会 (2000/09) 3a-ZQ-7　2000/09
微小GaNショットキー接触のI-V特性 - 転位が与える影響 -

塩島謙次, 末光哲也, 小椋充将

第61回応用物理学会学術講演会 (2000/09) 3p-ZQ-4　2000/09
InGaAsチャネルHEMTにおけるホール蓄積の影響：光照射検討

末光哲也, 児玉聡, 綱島聡, 木村俊二

第47回応用物理学関係連合講演会 (2000/03) 28a-ZA-9　2000/03
InGaAs系HEMTのドレイン電流ノイズから求めた高電界領域広がり

重川直輝, 末光哲也, 楳田洋太郎

第47回応用物理学関係連合講演会 (2000/03) 28a-ZA-10　2000/03
InPリセス停止層付きHEMTにおけるゲートリセスの最適化

末光哲也, 許東, 石井哲好, 横山春喜, 楳田洋太郎, 石井康信

第60回応用物理学会学術講演会 (1999/10) 1p-ZF-3　1999/10
フラーレン複合化ナノコンポジットレジストのウェットエッチング耐性

石井哲好, 玉村敏昭, 末光哲也

第60回応用物理学会学術講演会 (1999/10) 3a-E-6　1999/10
フラーレン・ナノコンポジットEBレジストを用いた30nmゲートHEMTの作製

末光哲也, 石井哲好, 横山春喜, 石井康信, 玉村敏昭

第46回応用物理学関係連合講演会 (1999/03) 31a-P11-29　1999/03
InGaAs系HEMTのドレイン電流ノイズに対する衝突イオン化の寄与

重川直輝, 末光哲也, 楳田洋太郎

第46回応用物理学関係連合講演会 (1999/03) 31a-P11-28　1999/03
30nmゲートInAlAs/InGaAs HEMTとその高周波特性

末光哲也, 石井哲好, 横山春喜, 楳田洋太郎, 榎木孝知, 石井康信, 玉村敏昭

電子情報通信学会電子デバイス研究会 (1999/01) ED98-185, p. 15-20　1999/01
２ステップリセスゲートInAlAs/InGaAs HEMTの劣化特性

末光哲也, 横山春喜, 石井康信

第59回応用物理学会学術講演会 (1998/09) 16p-ZK-13　1998/09
Designing subchannel for the enhancement of 2DEG confinement in InAs-inserted channel for InP-based HFETs

D. Xu, J. Osaka, T. Suemitsu, Y. Umeda, Y. Yamane, Y. Ishii

第59回応用物理学会学術講演会 (1998/09) 16p-ZK-14　1998/09
フリップチップボンディングされたInGaAs系HEMTのエレクトロルミネッセンス

重川直輝, 古田知史, 児玉聡, 末光哲也, 楳田洋太郎

第59回応用物理学会学術講演会 (1998/09) 16p-ZK-15　1998/09
２ステップリセスエッチングを用いた0.1mゲート・エンハンスメント型InAlAs/InGaAs HEMT

末光哲也, 榎木孝知, 富沢雅彰, 石井康信

第45回応用物理学関係連合講演会 (1998/03) 29p-T-2　1998/03
Fabricating asymmetrically-recessed InAlAs/InGaAs HFETs via electrochemical effects

D. Xu, T. Enoki, T. Suemitsu, Y. Umeda, H. Yokoyama, Y. Ishii

第45回応用物理学関係連合講演会 (1998/03) 30p-Q-7　1998/03
InPリセスストッパ付きInAlAs/InGaAs HEMTにおけるArプラズマを用いた２ステップリセスエッチング

末光哲也, 榎木孝知, 横山春喜, 石井康信

第58回応用物理学会学術講演会 (1997/09) 3p-ZG-17　1997/09
InAlAs/InGaAs HEMTにおけるキンク発現機構

末光哲也, 榎木孝知, 富沢雅彰, 石井康信

第44回応用物理学関係連合講演会 (1997/03) 30a-ZC-2　1997/03
InAlAs/InGaAs HEMTにおけるボディコンタクト電流の評価

末光哲也, 榎木孝知, 石井康信

第57回応用物理学会学術講演会 (1996/09) 7a-SZB-9　1996/09
InAlAs/InGaAs HEMTにおけるチャネル内ホールとキンク現象の関係

末光哲也, 榎木孝知, 石井康信

第43回応用物理学関係連合講演会 (1996/03) 28a-M-4　1996/03
InAlAs/InGaAs HEMTにおけるボディコンタクトのホール引抜き効果

末光哲也, 榎木孝知, 佐野伸行, 富沢雅彰, 石井康信

第56回応用物理学会学術講演会 (1995/09) 28a-ZQ-3　1995/09
p型ボディコンタクトを持つInAlAs/InGaAs HEMT

末光哲也, 榎木孝知, 石井康信

第42回応用物理学関係連合講演会 (1995/03) 29a-ZL-4　1995/03
自己クロック型シリアル－パラレル双方向変換器

浦田涼平, 高橋亮, 末光哲也, 鈴木博之

第67回応用物理学会学術講演会 (2006/08)，草津　2006/08
0.15µmデュアルゲートAlGaN/GaN HEMTミキサー(2) - 24GHzパルス変調動作 -

塩島謙次, 牧村隆司, 小杉敏彦, 末光哲也, 重川直輝, 廣木正伸, 横山春喜

第53回応用物理学関係連合講演会 (2006/03)，東京，24a-ZE-22　2006/03

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Industrial Property Rights 9

電界効果トランジスタ

末光哲也, 横山春喜

4799966

Property Type: Patent
電界効果トランジスタの製造方法

3715557

Property Type: Patent
ヘテロ接合型電界効果トランジスタ

3481554

Property Type: Patent
光電気変換素子

3692466

Property Type: Patent
ヘテロ接合型電界効果トランジスタ

3411511

Property Type: Patent
ヘテロ接合型電界効果トランジスタの製造方法

3377022

Property Type: Patent
電界効果トランジスタの製造方法

3316537

Property Type: Patent
Heterojunction field effect transistor and method of fabricating the same

6090649

Property Type: Patent
Heterojunction field effect transistor and method of fabricating the same

6144048

Property Type: Patent

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Research Projects 10

窒化物半導体における選択極性反転技術の構築とn型p型領域同時形成への応用の研究

末光哲也, 重川直輝, 大野裕, 高橋琢二

Offer Organization: 日本学術振興会

System: 科学研究費補助金

Category: 基盤研究（A）

Institution: 東北大学

2024/04 - 2027/03
半導体中における進行波増幅の可能性の検証に関する研究

末光哲也

Offer Organization: 日本学術振興会

System: 科学研究費補助金

Category: 挑戦（開拓）

Institution: 東北大学

2023/04 - 2026/03
窒素極性GaN系MIS-HEMTのパワーデバイス応用に向けた研究

末光哲也, 橋詰保

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 基盤研究(B)

Institution: 東北大学

2019/04/01 - 2022/03/31

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窒素極性GaN結晶を用いた高電子移動度トランジスタ（HEMT）に注目し、次世代パワーデバイスへの応用に視点を向け、窒素極性の分極を生かしたノーマリーオフ型動作の実現や、低オン抵抗のショットキーダイオードの実現を通して、既存のGa極性HEMTに対する優位性を明らかにすることを目指している。新型コロナ蔓延による緊急事態宣言発令とその後の出勤者数制限により、結晶成長装置の立ち上げ作業が出来ない期間が長期に及んだ。このため研究計画を変更して、新たな結晶成長を伴う研究項目は次年度に延期し、今年度は分極電荷モデル解析とシミュレーション、および、既存結晶を用いたショットキー電極やMIS構造の形成と評価に絞って研究を実施した。分極電荷モデルの評価では、残留不純物密度が異なる窒素極性GaN結晶でショットキー電極を形成して障壁高さを評価した。その結果では、障壁高さは残留不純物密度に影響されるものの、Ga極性GaNとの障壁高さの差と比較するとその変動範囲は小さく、昨年度提唱した分極電荷モデルで説明可能な範囲であった。一方で、窒素極性とGa極性の障壁高さの違いを正しく評価するためには、残留キャリア密度が等しい結晶を用意する必要があることを改めて認識した。このため、結晶成長以外の方法、例えばGa極性GaN結晶の転写等で窒素極性GaN結晶を得る方法を調査・検討した。 MIS構造の評価では、既存の窒素極性GaN結晶に原子層堆積法（ALD）によってAl2O3薄膜を形成したMIS電極を作製し、容量特性の評価を行った。その結果、順方向電圧ではAl2O3単独での容量に一致し、逆方向電圧ではAl2O3とGaNの合成容量に一致する、合理的なMIS電極特性を確認した。
Study on nitrogen-polar InGaAs-channel high electron mobility transistors

Suemitsu Tetsuya

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

2016/04/01 - 2019/03/31

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Growth and fabrication of (In)GaN/AlGaN high electron mobility transistors (HEMTs) using N-polar GaN materials were studied. Flat surface and two-dimensional electron gas were realized by substrates with an off-cut angle of as small as 0.8 degree. This enables to achieve isotropic electrical characteristics in N-polar GaN HEMTs. To reduce the deep levels at the gate insulator interface, reverse bias annealing was carried out and the reduction of the interface trap density was confirmed in N-polar HEMTs as it was reported for gallium-polar HEMTs.
Generation of the semiconductor two-dimensional plasmonic boom and its application to terahertz devices

OTSUJI TAIICHI, TOMBET Stephane, WATANABE Takayuki, SATOU Akira, NARAHARA Koichi, RYZHII Victor, SUEMITSU Tetsuya, SHUR Michael S., AIZIN Gregory R., POPOV Vychaslav V.

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Challenging Exploratory Research

Institution: Tohoku University

2016/04/01 - 2018/03/31

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We explored the generation of the plasmonic boom, a kind of plasmon instability utilizing the super velocity phenomenon of collective charge density waves of two-dimensional electrons in monolayer graphene and their application to the generation and amplification of terahertz electromagnetic wave radiations. An asymmetric dual-grating-gate structure was introduced into the graphene channel field-effect transistor to spatially and periodically modulate the electron drift velocity and the plasma wave velocity crossing over each other at the periodic boundaries. It is theoretically expected that intense shock waves (plasmonic boom) such as supersonic will occur at the moment the drift velocity exceeds the plasma wave velocity. We designed and fabricated the device and experimentally verified the occrrence of the plasmonic instability driven giant light amplification of stimulated emission of terahertz radiation at room temperature for the first time.
Study on GaN-based vertical transistors using ScAlMgO4 substrates

Suemitsu Tetsuya

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Challenging Exploratory Research

Institution: Tohoku University

2015/04/01 - 2018/03/31

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GaN HEMT heterostructures are grown on cleaved ScAlMgO4 (SCAM) substrates. By using small off-cut SCAM, HEMT structures with flat surface comparable to those grown on conventional sapphire substrates are confirmed. As a part of the GaN HEMT process, neutral beam etching is applied to the GaN material systems for the first time. By means of this advanced etching, significant reduction of current collapse in GaN HEMTs are observed. The cleaving of thin SCAM layers off from bulk SCAM substrates is also a key technology to achieve GaN vertical transistors. It has been confirmed that thick GaN layers are automatically cleaved off from SCAM substrates during cooling down after growth by means of the stain induced by thermal expansion.
Graphene terahertz detectors based on plasmons and resonant tunneling

TOMBET STEPHANE, OTSUJI Taiichi, SUEMITSU Tetsuya, SATOU Akira, RYZHII Victor, WATANABE Takayuki, YADAV Deepika, KURITA Yuki, POPOV Vyacheslav

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Young Scientists (B)

Institution: Tohoku University

2014/04/01 - 2016/03/31

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This study was devoted to develop a novel terahertz detector in which the graphene plasmon and quantum-mechanical resonant tunneling are newly introduced as the operation principles. The device consists of a double-graphene-layer in which a tunnel barrier layer is sandwiched by two monolayer-graphene layers and an external gate control element. The device can exploit the photon-assisted resonant tunneling as well as graphene plasmonic resonances as highly sensitive terahertz detection principles. In order to examine the feasibility of the device operation, test devices were fabricated and their property were experimentally measured, confirming the validity of the proposed device structures and the operation principles.
Detail evaluation of electron velocity in GaN HEMTs

SUEMITSU Tetsuya

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (C)

Institution: Tohoku University

2012/04/01 - 2015/03/31

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The electron velocity in gallium nitride (GaN) high electron mobility transistors (HEMTs), which is one of important parameters to estimate the high-frequency characteristics of the transistors, is evaluated by means of the gate delay time analysis in the samples with different gate/field plate structures. The drain depletion region is clearly separated from the gate depletion region through the gate delay time analysis of these samples. The result suggests an electron velocity of 1.21-1.27 x 10^7 cm/s in 180-nm-gate GaN HEMTs.
Creation of graphene terahertz lasers

OTSUJI Taiichi, VICTOR Ryzhii, SUEMITSU Maki, SUEMITSU Tetsuya, SATOU Akira, SANO Eiichi, MAXIM Ryzhii, FUKIDOME Hirokazu, WATANABE Takayuki, BOUBANGA-TOMBET Stephane, TAKABAYASHI Susumu, TAKAKUWA Yuzi, AGO Hiroki, KAWAHARA Kenji, DUBINOV Alexander, POPOV Vyacheslav, SVINTSOV Dmitry, MITIN Vladimir, SHUR Michael

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Specially Promoted Research

Institution: Tohoku University

2011 - 2015

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We challenged the creation of graphene-based terahertz (THz) lasers. First, we succeeded in observing the stimulated emission of THz radiation at 300K in the transient response of optically pumped graphene, manifesting the proof of the laser operation principle that we had theoretically discovered. Second, we theoretically discovered a giant THz gain enhancement effect of the surface plasmon polaritons in pumped graphene and experimentally verified it by using our original optical-pump and near-field THz-probe spectroscopy. Third, we designed and fabricated the current injection-type graphene THz laser by using our originally developed graphene-synthesis and process technology, succeeding in single-mode lasing at 5.2 THz at 100K for the first time. Fourth, we built the design theory for graphene THz lasers. Furthermore, we proposed a novel device structure and revealed their extremely high THz gain properties. On the basis of these results obtained the feasibility of THz lasing at room temperature from graphene-based devices was quantitatively manifested.
Exploring Novel Electromagnetic Circuits Based on Management of Low-Dimensional Plasmonic Dispersion

OTSUJI Taiichi, RYZHII Victor, SANO Eiichi, NARAHARA Koichi, MEZIANI Yahya moubarak, SUEMITSU Tetsuya

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (S)

Institution: Tohoku University

2006 - 2010

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This research explored new conceptual electromagnetic devices, circuits, and systems based on management of low-dimensional plasmonic dispersion in the millimeter-wave to terahertz-wave domain for the purpose of realization of room-temperature operating integrated circuits/systems which enables ultra-broadband signal-processing functions. Study was essentially focused on the four primarily important circuit functions :' extraordinary transmission',' amplification',' frequency conversion', and ' temporal logic', which has been created in semiconductor heterostructure material systems including graphene by using nanometer-metamaterial processing technology.

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Social Activities 1

金沢工業大学大学院高信頼ものづくり専攻公開技術講座

2009/11/12 - 2009/11/13

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公開技術講座「化合物半導体電子デバイス開発者のための基礎教養講座」において，「InP HEMT：物性，動作原理，デバイス構造，高速化，高信頼化の実例」を講演

Media Coverage 1

シリコン基板上に「グラフェン」薄膜

河北新報

2008/07/24

Type: Newspaper, magazine

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東北大学電気通信研究所の末光眞希教授（半導体薄膜工学）と末光哲也准教授（半導体電子デバイス）らの研究グループは，新しい半導体材料として注目される「グラフェン」の薄膜をシリコン基板上に作ることに世界で初めて成功した。高速トランジスタを実現する次世代半導体の実用化に道を開いた。