TOHOKU UNIVERSITY Researchers

Details of the Researcher

Home

日本語 English

Shunsuke Fukami

Section

Research Institute of Electrical Communication

Job title

Professor

Degree

博士（工学）（名古屋大学）
修士（工学）（名古屋大学）

researchmap

https://researchmap.jp/7000006893

J-GLOBAL ID

201401054922962988

Research History 9

2023/04 - Present

Tohoku University　Center for Science and Innovation in Spintronics　Director
2020/01 - Present

Tohoku University　Center for Innovative Integrated Electronic Systems　Professor
2020/01 - Present

Tohoku University　Research Institute of Electrical Communication　Professor
2019/04 - Present

Tohoku University　Advanced Institute for Materials Research (WPI-AIMR)　Principal Investigator
2016/02 - 2019/12

Tohoku University　Research Institute of Electrical Communication　Associate Professor
2015/04 - 2016/01

Tohoku University　Center for Spintronics Integrated Systems　Associate Professor
2005/04 - 2016/01

NEC Corporation
2014/04 - 2015/03

Tohoku University　Center for Innovative Integrated Electronic Systems　A
2011/02 - 2014/03

Tohoku University　Center for Spintronics Integrated Systems　Assistant Professor

Show all Show first 5

Education 2

Nagoya University　Graduate School of Engineering　Department of Material Engineering

2003/04 - 2005/03
Nagoya University　School of Engineering　Physical Science and Engineering

1999/04 - 2003/03

Professional Memberships 3

IEEE Magnetics Society
日本磁気学会
応用物理学会

Research Interests 3

Semiconductor integrated circuit
Magnetic material
Spintronics

Research Areas 1

Nanotechnology/Materials / Applied materials /

Awards 17

Semiconductor of the year 2024, Semiconductor Device Division

2024/06　SangyoTimes, Inc.　Ultra-small STT-MRAM device technology
JSPS Prize

2023/02　Japan Society for the Promotion of Science　Development of new-functional spintronics device and its application to unconventional computing
MSJ Achievement Award

2022/09　The Magnetics Society of Japan　Development of new-functional spintronics device and its application to unconventional computing
Marubun Research Encouragement Award

2021/03　Proof-of-concept of probabilistic computer using tunnel magnetoresistance devices
Outstanding Paper Award

2019/09　Japan Society of Applied Physics　Analogue spin–orbit torque device for artificial-neural-network-based associative memory operation
Gold Prize of the Tanaka Kikinzoku Memorial Foundation

2019/03　Tanaka Kikinzoku Memorial Foundation　Analog spintronics memory device utilizing CoPt-based nano-composite materials for brain-inspired computing
Distinguished Research Award

2018/09　The Magnetics Society of Japan
Young Researchers Award

2018/06　Asian Union of Magnetics Societies　Spin-orbit torque switching and its applications – from high-speed memory to artificial neural network –
Aoba Foundation For The Promotion Of Engineering Award

2017/12　Aoba Foundation For The Promotion Of Engineering
2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Best Poster Award

2017/09　Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO dots
DPS Paper Award

2016/11　38th International Symposium on Dry Process(DPS2016) Organizing Committee　Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion
原田研究奨励賞

2015/07　本多記念会
文部科学大臣表彰若手科学者賞

2015/04　文部科学省
応用物理学会講演奨励賞

2014/09　応用物理学会
船井研究奨励賞

2014/04　船井情報科学振興財団
RIEC Award東北大学研究者賞

2013/11/21　電気通信工学振興会
応用物理学会論文賞

2012/09/11　応用物理学会　Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire

Show all ︎Show 5

Papers 263

Unraveling effects of competing interactions and frustration in vdW ferromagnetic Fe3GeTe2 nanoflake devices

Rajeswari Roy Chowdhury, Daichi Kurebayashi, Jana Lustikova, Oleg A. Tretiakov, Shunsuke Fukami, Ravi Prakash Singh, Samik DuttaGupta

Applied Physics Letters　2025/07/07

DOI： 10.1063/5.0262983 　
Electrically Controlled Nonlinear Magnon-Magnon Coupling in a Synthetic Antiferromagnet

A. Sud, K. Yamamoto, S. Iihama, K. Ishibashi, S. Fukami, H. Kurebayashi, S. Mizukami

Physical Review Letters　2025/06/20

DOI： 10.1103/sc6y-rxbg 　
Interfacial Dzyaloshinskii-Moriya interaction in nonmagnetic/noncollinear-antiferromagnetic bilayers

Yuta Yamane, Yasufumi Araki, Shunsuke Fukami

Physical Review B　2025/04/11

DOI： 10.1103/PhysRevB.111.144412 　
Unconventional Spin Hall Magnetoresistance in Noncollinear Antiferromagnet/Heavy-Metal Stacks

Tomohiro Uchimura, Jiahao Han, Ping Tang, Ju-Young Yoon, Yutaro Takeuchi, Yuta Yamane, Shun Kanai, Gerrit E. W. Bauer, Hideo Ohno, Shunsuke Fukami

Physical Review Letters　2025/03/03

DOI： 10.1103/PhysRevLett.134.096701 　
Unconventional responses in non-collinear antiferromagnets

Jiahao Han, Ju-Young Yoon, Hideo Ohno, Shunsuke Fukami

Newton　2025/03

DOI： 10.1016/j.newton.2025.100012 　
Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure

Ju-Young Yoon, Yutaro Takeuchi, Ryota Takechi, Jiahao Han, Tomohiro Uchimura, Yuta Yamane, Shun Kanai, Jun’ichi Ieda, Hideo Ohno, Shunsuke Fukami

Nature Communications　2025/02/05

DOI： 10.1038/s41467-025-56157-6 　
Comparative Study of Current-Induced Torque in Cr/CoFeB/MgO and W/CoFeB/MgO

Shunya Chiba, Yukihiro Marui, Hideo Ohno, Shunsuke Fukami

Nano Letters　2024/11/06

DOI： 10.1021/acs.nanolett.4c03809 　
Block Copolymer-Directed Single-Diamond Hybrid Structures Derived from X-ray Nanotomography

Kenza Djeghdi, Dmitry Karpov, S. Narjes Abdollahi, Karolina Godlewska, René Iseli, Mirko Holler, Claire Donnelly, Takeshi Yuasa, Hiroaki Sai, Ulrich B. Wiesner, Ullrich Steiner, Bodo D. Wilts, Michimasa Musya, Shunsuke Fukami, Hideo Ohno, Ana Diaz, Justin Llandro, Ilja Gunkel

ACS Nano　18　(39)　26503-26513　2024/10/01

DOI： 10.1021/acsnano.3c10669 　

ISSN： 1936-0851

eISSN： 1936-086X
Impact of External Magnetic Fields on STT-MRAM: An Application Note

Bernard Dieny, Sanjeev Aggarwal, Vinayak Bharat Naik, Sebastien Couet, Thomas Coughlin, Shunsuke Fukami, Kevin Garello, Jack Guedj, Jean Anne C. Incorvia, Laurent Lebrun, Kyung-Jin Lee, Daniele Leonelli, Yonghwan Noh, Siamak Salimy, Steven Soss, Luc Thomas, Weigang Wang, Daniel C. Worledge

IEEE Electron Devices Magazine　2024/09

DOI： 10.1109/MED.2024.3442086 　
Effect of nonlinear magnon interactions on stochastic magnetization switching

Mehrdad Elyasi, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Gerrit E.W. Bauer

Physical Review B　110　(9)　2024/09/01

DOI： 10.1103/PhysRevB.110.094433 　

ISSN： 2469-9950

eISSN： 2469-9969
Nanoscale spin rectifiers for harvesting ambient radiofrequency energy

Raghav Sharma, Tung Ngo, Eleonora Raimondo, Anna Giordano, Junta Igarashi, Butsurin Jinnai, Shishun Zhao, Jiayu Lei, Yong Xin Guo, Giovanni Finocchio, Shunsuke Fukami, Hideo Ohno, Hyunsoo Yang

Nature Electronics　7　(8)　653-661　2024/08

DOI： 10.1038/s41928-024-01212-1 　

eISSN： 2520-1131
Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

Rikuto Ota, Keito Kobayashi, Keisuke Hayakawa, Shun Kanai, Kerem Y. Çamsarı, Hideo Ohno, Shunsuke Fukami

Applied Physics Letters　125　(2)　2024/07/08
Publisher: AIP Publishing
DOI： 10.1063/5.0219606 　

ISSN： 0003-6951

eISSN： 1077-3118
Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl<inf>2</inf>O<inf>4</inf>

Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullivan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto Kohda, Shunsuke Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno, Shun Kanai

Applied Physics Express　17　(7)　2024/07/01

DOI： 10.35848/1882-0786/ad59f4 　

ISSN： 1882-0778

eISSN： 1882-0786
Collective Spin-Wave Dynamics in Gyroid Ferromagnetic Nanostructures

Mateusz Gołębiewski, Riccardo Hertel, Massimiliano d’Aquino, Vitaliy Vasyuchka, Mathias Weiler, Philipp Pirro, Maciej Krawczyk, Shunsuke Fukami, Hideo Ohno, Justin Llandro

ACS Applied Materials and Interfaces　16　(17)　22177-22188　2024/05/01

DOI： 10.1021/acsami.4c02366 　

ISSN： 1944-8244

eISSN： 1944-8252
Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization

Haruna Kaneko, Rikuto Ota, Keito Kobayashi, Shun Kanai, Mehrdad Elyasi, Gerrit E. W. Bauer, Hideo Ohno, Shunsuke Fukami

Applied Physics Express　17　(5)　2024/05/01

DOI： 10.35848/1882-0786/ad43b0 　

ISSN： 1882-0778

eISSN： 1882-0786
Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets

Kemal Selcuk, Shun Kanai, Rikuto Ota, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

Physical Review Applied　21　(5)　054002　2024/05/01
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevapplied.21.054002 　

eISSN： 2331-7019
Room-temperature flexible manipulation of the quantum-metric structure in a topological chiral antiferromagnet

Jiahao Han, Tomohiro Uchimura, Yasufumi Araki, Ju-Young Yoon, Yutaro Takeuchi, Yuta Yamane, Shun Kanai, Jun’ichi Ieda, Hideo Ohno, Shunsuke Fukami

Nature Physics　20　(7)　1110-1117　2024/04/22

DOI： 10.1038/s41567-024-02476-2 　

ISSN： 1745-2473

eISSN： 1745-2481
CMOS plus stochastic nanomagnets enabling heterogeneous computers for probabilistic inference and learning

Nihal Sanjay Singh, Keito Kobayashi, Qixuan Cao, Kemal Selcuk, Tianrui Hu, Shaila Niazi, Navid Anjum Aadit, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

Nature Communications　15　(1)　2024/03/27
Publisher: Springer Science and Business Media LLC
DOI： 10.1038/s41467-024-46645-6 　

eISSN： 2041-1723
Pitch Scaling Prospect of Ultra-Small Magnetic Tunnel Junctions for High-Density STT-MRAM: Effects of Magnetostatic Interference From Neighboring Bits

Takanobu Shinoda, Junta Igarashi, Butsurin Jinnai, Shunsuke Fukami, Hideo Ohno

IEEE Electron Device Letters　45　(2)　184-187　2024/02

DOI： 10.1109/LED.2023.3345743 　

ISSN： 0741-3106

eISSN： 1558-0563
Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities

Junta Igarashi, Butsurin Jinnai, Kyota Watanabe, Takanobu Shinoda, Takuya Funatsu, Hideo Sato, Shunsuke Fukami, Hideo Ohno

npj Spintronics　2024/01/04

DOI： 10.1038/s44306-023-00003-2 　

ISSN： 2948-2119

More details Close

<jats:title>Abstract</jats:title><jats:p>Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-transfer torque magnetoresistive random access memory (STT-MRAM). However, it is challenging in the conventional MTJs using a thin CoFeB free layer capped with an MgO layer because of increasing difficulties in satisfying the required data retention and switching speed at smaller scales. Here we report single-nanometer MTJs using a free layer consisting of CoFeB/MgO multilayers, where the number of CoFeB/MgO interfaces and/or the CoFeB thicknesses are engineered to tailor device performance to applications requiring high-data retention or high-speed capability. We fabricate ultra-small MTJs down to 2.0 nm and show high data retention (over 10 years) and high-speed switching at 10 ns or below in sub-5-nm MTJs. The stack design proposed here proves that ultra-small CoFeB/MgO MTJs hold the potential for high-performance and high-density STT-MRAM.</jats:p>
High-resolution three-dimensional imaging of topological textures in nanoscale single-diamond networks

D. Karpov, K. Djeghdi, M. Holler, S. Narjes Abdollahi, K. Godlewska, C. Donnelly, T. Yuasa, H. Sai, U. B. Wiesner, B. D. Wilts, U. Steiner, M. Musya, S. Fukami, H. Ohno, I. Gunkel, A. Diaz, J. Llandro

Nature Nanotechnology　2024

DOI： 10.1038/s41565-024-01735-w 　

ISSN： 1748-3387

eISSN： 1748-3395
Hardware Demonstration of Feedforward Stochastic Neural Networks with Fast MTJ-based p-bits

Nihal Sanjay Singh, Shaila Niazi, Shuvro Chowdhury, Kemal Selcuk, Haruna Kaneko, Keito Kobayashi, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

2023 International Electron Devices Meeting (IEDM)　1-4　2023/12/09
Publisher: IEEE
DOI： 10.1109/iedm45741.2023.10413686 　
Spintronic devices for high-density memory and neuromorphic computing – A review

BingJin Chen, Minggang Zeng, Khoong Hong Khoo, Debasis Das, Xuanyao Fong, Shunsuke Fukami, Sai Li, Weisheng Zhao, Stuart S.P. Parkin, S.N. Piramanayagam, Sze Ter Lim

Materials Today　70　193-217　2023/11

DOI： 10.1016/j.mattod.2023.10.004 　

ISSN： 1369-7021

eISSN： 1873-4103
Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque

Ju-Young Yoon, Pengxiang Zhang, Chung-Tao Chou, Yutaro Takeuchi, Tomohiro Uchimura, Justin T. Hou, Jiahao Han, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Luqiao Liu

Nature Materials　22　(9)　1106-1113　2023/08/03
Publisher: Springer Science and Business Media LLC
DOI： 10.1038/s41563-023-01620-2 　

ISSN： 1476-1122

eISSN： 1476-4660
Magnetic order in nanoscale gyroid networks

Ami S. Koshikawa, Justin Llandro, Masayuki Ohzeki, Shunsuke Fukami, Hideo Ohno, Naëmi Leo

Physical Review B　108　(2)　2023/07/17

DOI： 10.1103/PhysRevB.108.024414 　

ISSN： 2469-9950

eISSN： 2469-9969
Nonlinear conductance in nanoscale CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis Peer-reviewed

Motoya Shinozaki, Junta Igarashi, Shuichi Iwakiri, Takahito Kitada, Keisuke Hayakawa, Butsurin Jinnai, Tomohiro Otsuka, Shunsuke Fukami, Kensuke Kobayashi, Hideo Ohno

Physical Review B　107　(9)　2023/03/30

DOI： 10.1103/PhysRevB.107.094436 　

ISSN： 2469-9950

eISSN： 2469-9969
Thermal stability of non-collinear antiferromagnetic Mn<inf>3</inf>Sn nanodot

Yuma Sato, Yutaro Takeuchi, Yuta Yamane, Ju Young Yoon, Shun Kanai, Jun'Ichi Ieda, Hideo Ohno, Shunsuke Fukami

Applied Physics Letters　122　(12)　2023/03/20

DOI： 10.1063/5.0135709 　

ISSN： 0003-6951
A full-stack view of probabilistic computing with p-bits: devices, architectures and algorithms

Shuvro Chowdhury, Andrea Grimaldi, Navid Anjum Aadit, Shaila Niazi, Masoud Mohseni, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Luke Theogarajan, Giovanni Finocchio, Supriyo Datta, Kerem Y. Camsari

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits　9　(1)　1-11　2023

DOI： 10.1109/JXCDC.2023.3256981 　

eISSN： 2329-9231
Tunnel conductance modeling of spintronics devices based on device temperature dynamics Peer-reviewed

Yushi Kikuchi, Yoshihiko Horio, Shunsuke Fukami, Hiroyasu Ando

Proceedings of International Symposium on Nonlinear Theory and Its Applications　139-142　2022/12

DOI： 10.34385/proc.71.A4L-D-04 　
External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling

Keito Kobayashi, Keisuke Hayakawa, Junta Igarashi, William A. Borders, Shun Kanai, Hideo Ohno, Shunsuke Fukami

Physical Review Applied　18　(5)　2022/11/29
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevapplied.18.054085 　

eISSN： 2331-7019
Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium

Jonathan Gibbons, Takaaki Dohi, Vivek P. Amin, Fei Xue, Haowen Ren, Jun-Wen Xu, Hanu Arava, Soho Shim, Hilal Saglam, Yuzi Liu, John E. Pearson, Nadya Mason, Amanda K. Petford-Long, Paul M. Haney, Mark D. Stiles, Eric E. Fullerton, Andrew D. Kent, Shunsuke Fukami, Axel Hoffmann

Physical Review Applied　18　(2)　2022/08/29
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevapplied.18.024075 　

eISSN： 2331-7019
Anisotropic magnetotransport in the layered antiferromagnet TaFe1.25Te3

Rajeswari Roy Chowdhury, Samik DuttaGupta, Chandan Patra, Anshu Kataria, Shunsuke Fukami, Ravi Prakash Singh

Physical Review Materials　6　(8)　2022/08/12
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevmaterials.6.084408 　

eISSN： 2475-9953
Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions

Takuya Funatsu, Shun Kanai, Jun’ichi Ieda, Shunsuke Fukami, Hideo Ohno

Nature Communications　13　(1)　2022/07

DOI： 10.1038/s41467-022-31788-1 　

eISSN： 2041-1723
Large Antisymmetric Interlayer Exchange Coupling Enabling Perpendicular Magnetization Switching by an In-Plane Magnetic Field Peer-reviewed

Hiroto Masuda, Takeshi Seki, Yuta Yamane, Rajkumar Modak, Ken-ichi Uchida, Jun’ichi Ieda, Yong-Chang Lau, Shunsuke Fukami, Koki Takanashi

Physical Review Applied　17　(5)　054036-1-054036-9　2022/05

DOI： 10.1103/PhysRevApplied.17.054036 　

eISSN： 2331-7019
Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect

Tomohiro Uchimura, Ju-Young Yoon, Yuma Sato, Yutaro Takeuchi, Shun Kanai, Ryota Takechi, Keisuke Kishi, Yuta Yamane, Samik DuttaGupta, Jun'ichi Ieda, Hideo Ohno, Shunsuke Fukami

APPLIED PHYSICS LETTERS　120　(17)　2022/04

DOI： 10.1063/5.0089355 　

ISSN： 0003-6951

eISSN： 1077-3118
Theory of Emergent Inductance with Spin-Orbit Coupling Effects

Yuta Yamane, Shunsuke Fukami, Jun'ichi Ieda

PHYSICAL REVIEW LETTERS　128　(14)　2022/04

DOI： 10.1103/PhysRevLett.128.147201 　

ISSN： 0031-9007

eISSN： 1079-7114
Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties

Yutaro Takeuchi, Ryotaro Okuda, Junta Igarashi, Butsurin Jinnai, Takaharu Saino, Shoji Ikeda, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　120　(5)　2022/01/31

DOI： 10.1063/5.0077874 　

ISSN： 0003-6951

eISSN： 1077-3118
Experimental evaluation of simulated quantum annealing with MTJ-augmented p-bits

Andrea Grimaldi, Kemal Selcuk, Navid Anjum Aadit, Keito Kobayashi, Qixuan Cao, Shuvro Chowdhury, Giovanni Finocchio, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

Technical Digest - International Electron Devices Meeting, IEDM　2022-December　2241-2244　2022

DOI： 10.1109/IEDM45625.2022.10019530 　

ISSN： 0163-1918
Modification of unconventional Hall effect with doping at the nonmagnetic site in a two-dimensional van der Waals ferromagnet

Rajeswari Roy Chowdhury, Chandan Patra, Samik DuttaGupta, Sayooj Satheesh, Shovan Dan, Shunsuke Fukami, Ravi Prakash Singh

Physical Review Materials　6　(1)　2022/01

DOI： 10.1103/PhysRevMaterials.6.014002 　

ISSN： 2475-9953

eISSN： 2475-9953
Hardware-Aware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions

Jan Kaiser, William A. Borders, Kerem Y. Camsari, Shunsuke Fukami, Hideo Ohno, Supriyo Datta

Physical Review Applied　17　(1)　2022/01

DOI： 10.1103/PhysRevApplied.17.014016 　

ISSN： 2331-7019

eISSN： 2331-7019
Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing

Mohammad Zahedinejad, Himanshu Fulara, Roman Khymyn, Afshin Houshang, Mykola Dvornik, Shunsuke Fukami, Shun Kanai, Hideo Ohno, Johan Åkerman

Nature Materials　21　(1)　81-87　2022/01

DOI： 10.1038/s41563-021-01153-6 　

ISSN： 1476-1122

eISSN： 1476-4660
Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions

Yutaro Takeuchi, Eli Christopher I. Enobio, Butsurin Jinnai, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　119　(24)　2021/12/13

DOI： 10.1063/5.0072957 　

ISSN： 0003-6951

eISSN： 1077-3118
Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2

Rajeswari Roy Chowdhury, Samik DuttaGupta, Chandan Patra, Oleg A. Tretiakov, Sudarshan Sharma, Shunsuke Fukami, Hideo Ohno, Ravi Prakash Singh

Scientific Reports　11　(1)　2021/12

DOI： 10.1038/s41598-021-93402-6 　

ISSN： 2045-2322

eISSN： 2045-2322
Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis

Keito Kobayashi, William A. Borders, Shun Kanai, Keisuke Hayakawa, Hideo Ohno, Shunsuke Fukami

Applied Physics Letters　119　(13)　2021/09/27

DOI： 10.1063/5.0065919 　

ISSN： 0003-6951

eISSN： 1077-3118
Roadmap of Spin-Orbit Torques

Qiming Shao, Peng Li, Luqiao Liu, Hyunsoo Yang, Shunsuke Fukami, Armin Razavi, Hao Wu, Kang Wang, Frank Freimuth, Yuriy Mokrousov, Mark D. Stiles, Satoru Emori, Axel Hoffmann, Johan Akerman, Kaushik Roy, Jian Ping Wang, See Hun Yang, Kevin Garello, Wei Zhang

IEEE Transactions on Magnetics　57　(7)　2021/07

DOI： 10.1109/TMAG.2021.3078583 　

ISSN： 0018-9464

eISSN： 1941-0069
Magnetization processes and magnetic domain structures in Ta/CoFeB/MgO stacks

A. K. Dhiman, T. Dohi, W. Dobrogowski, Z. Kurant, I. Sveklo, S. Fukami, H. Ohno, A. Maziewski

Journal of Magnetism and Magnetic Materials　529　2021/07/01

DOI： 10.1016/j.jmmm.2020.167699 　

ISSN： 0304-8853
Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction

Takaaki Dohi, Shunsuke Fukami, Hideo Ohno

Physical Review B　103　(21)　2021/06/29

DOI： 10.1103/physrevb.103.214450 　

ISSN： 2469-9950

eISSN： 2469-9969
Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1−x thin films

Ju-Young Yoon, Yutaro Takeuchi, Samik DuttaGupta, Yuta Yamane, Shun Kanai, Jun’ichi Ieda, Hideo Ohno, Shunsuke Fukami

AIP Advances　11　(6)　065318-065318　2021/06/01

DOI： 10.1063/5.0043192 　

eISSN： 2158-3226
Electrically connected spin-torque oscillators array for 2.4GHz WiFi band transmission and energy harvesting

Raghav Sharma, Rahul Mishra, Tung Ngo, Yong-Xin Guo, Shunsuke Fukami, Hideo Sato, Hideo Ohno, Hyunsoo Yang

NATURE COMMUNICATIONS　12　(1)　2021/05

DOI： 10.1038/s41467-021-23181-1 　

ISSN： 2041-1723

eISSN： 2041-1723
Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque

Yutaro Takeuchi, Yuta Yamane, Ju-Young Yoon, Ryuichi Itoh, Butsurin Jinnai, Shun Kanai, Jun'ichi Ieda, Shunsuke Fukami, Hideo Ohno

NATURE MATERIALS　20　(10)　1364-1370　2021/05

DOI： 10.1038/s41563-021-01005-3 　

ISSN： 1476-1122

eISSN： 1476-4660
Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

Kerem Y. Camsari, Mustafa Mert Torunbalci, William A. Borders, Hideo Ohno, Shunsuke Fukami

PHYSICAL REVIEW APPLIED　15　(4)　2021/04

DOI： 10.1103/PhysRevApplied.15.044049 　

ISSN： 2331-7019

eISSN： 2331-7019
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition

Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

IEEE Journal of Solid-State Circuits　56　(4)　1116-1128　2021/04

DOI： 10.1109/JSSC.2020.3039800 　

ISSN： 0018-9200

eISSN： 1558-173X
Erratum: Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions (Appl. Phys. Lett. (2021) 118 (082404) DOI: 10.1063/5.0043058)

Butsurin Jinnai, Junta Igarashi, Kyota Watanabe, Eli Christopher I. Enobio, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　118　(13)　2021/03/29

DOI： 10.1063/5.0050431 　

ISSN： 0003-6951

eISSN： 1077-3118
Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions

K. Hayakawa, S. Kanai, T. Funatsu, J. Igarashi, B. Jinnai, W. A. Borders, H. Ohno, S. Fukami

Physical Review Letters　126　(11)　2021/03/17

DOI： 10.1103/PhysRevLett.126.117202 　

ISSN： 0031-9007

eISSN： 1079-7114
Theory of relaxation time of stochastic nanomagnets

Shun Kanai, Keisuke Hayakawa, Hideo Ohno, Shunsuke Fukami

Physical Review B　103　(9)　2021/03/17

DOI： 10.1103/PhysRevB.103.094423 　

ISSN： 2469-9950

eISSN： 2469-9969
Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin-orbit torque

Chaoliang Zhang, Yutaro Takeuchi, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　118　(9)　2021/03/01

DOI： 10.1063/5.0039061 　

ISSN： 0003-6951

eISSN： 1077-3118
Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions

Butsurin Jinnai, Junta Igarashi, Kyota Watanabe, Eli Christopher I. Enobio, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　118　(8)　2021/02/22

DOI： 10.1063/5.0043058 　

ISSN： 0003-6951

eISSN： 1077-3118
Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions

Junta Igarashi, Butsurin Jinnai, Valentin Desbuis, Stéphane Mangin, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　118　(1)　2021/01/04

DOI： 10.1063/5.0029031 　

ISSN： 0003-6951

eISSN： 1077-3118
Fast Switching Down to 3.5 ns in Sub-5-nm Magnetic Tunnel Junctions Achieved by Engineering Relaxation Time

B. Jinnai, J. Igarashi, T. Shinoda, K. Watanabe, S. Fukami, H. Ohno

Technical Digest - International Electron Devices Meeting, IEDM　2021-December　1-4　2021

DOI： 10.1109/IEDM19574.2021.9720509 　

ISSN： 0163-1918
High-performance shape-anisotropy magnetic tunnel junctions down to 2.3 nm

B. Jinnai, J. Igarashi, K. Watanabe, T. Funatsu, H. Sato, S. Fukami, H. Ohno

Technical Digest - International Electron Devices Meeting, IEDM　2020-December　24.6.1-24.6.4　2020/12/12

DOI： 10.1109/IEDM13553.2020.9371972 　

ISSN： 0163-1918
Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials International-journal

Junta Igarashi, Quentin Remy, Satoshi Iihama, Grégory Malinowski, Michel Hehn, Jon Gorchon, Julius Hohlfeld, Shunsuke Fukami, Hideo Ohno, Stéphane Mangin

Nano Letters　20　(12)　8654-8660　2020/12/09

DOI： 10.1021/acs.nanolett.0c03373 　

ISSN： 1530-6984

eISSN： 1530-6992
Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet International-journal

Quentin Remy, Junta Igarashi, Satoshi Iihama, Grégory Malinowski, Michel Hehn, Jon Gorchon, Julius Hohlfeld, Shunsuke Fukami, Hideo Ohno, Stéphane Mangin

Advanced Science　7　(23)　2001996-2001996　2020/12/02

DOI： 10.1002/advs.202001996 　

eISSN： 2198-3844
Spin-orbit torque switching of an antiferromagnetic metallic heterostructure

Samik DuttaGupta, A. Kurenkov, Oleg A. Tretiakov, G. Krishnaswamy, G. Sala, V. Krizakova, F. Maccherozzi, S. S. Dhesi, P. Gambardella, S. Fukami, H. Ohno

Nature Communications　11　(1)　2020/12

DOI： 10.1038/s41467-020-19511-4 　

eISSN： 2041-1723
Giant voltage-controlled modulation of spin Hall nano-oscillator damping International-journal

Himanshu Fulara, Mohammad Zahedinejad, Roman Khymyn, Mykola Dvornik, Shunsuke Fukami, Shun Kanai, Hideo Ohno, Johan Åkerman

Nature Communications　11　(1)　4006-4006　2020/12/01

DOI： 10.1038/s41467-020-17833-x 　

ISSN： 2041-1723

eISSN： 2041-1723
Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance

M. Shinozaki, T. Dohi, J. Igarashi, J. Llandro, S. Fukami, H. Sato, H. Ohno

Applied Physics Letters　117　(20)　2020/11/16

DOI： 10.1063/5.0020591 　

ISSN： 0003-6951
Multidomain Memristive Switching of Pt38Mn62/ [Co/Ni] n Multilayers

G. K. Krishnaswamy, A. Kurenkov, G. Sala, M. Baumgartner, V. Krizakova, C. Nistor, F. MacCherozzi, S. S. Dhesi, S. Fukami, H. Ohno, P. Gambardella

Physical Review Applied　14　(4)　2020/10/20

DOI： 10.1103/PhysRevApplied.14.044036 　

eISSN： 2331-7019
All-optical probe of magnetization precession modulated by spin-orbit torque

Kazuaki Ishibashi, Satoshi Iihama, Yutaro Takeuchi, Kaito Furuya, Shun Kanai, Shunsuke Fukami, Shigemi Mizukami

Applied Physics Letters　117　(12)　2020/09/21

DOI： 10.1063/5.0020852 　

ISSN： 0003-6951

eISSN： 1077-3118
Antiferromagnetic spintronics

Shunsuke Fukami, Virginia O. Lorenz, Olena Gomonay

Journal of Applied Physics　128　(7)　2020/08/21

DOI： 10.1063/5.0023614 　

ISSN： 0021-8979

eISSN： 1089-7550
Neuromorphic computing with antiferromagnetic spintronics

Aleksandr Kurenkov, Shunsuke Fukami, Hideo Ohno

Journal of Applied Physics　128　(1)　2020/07/07

DOI： 10.1063/5.0009482 　

ISSN： 0021-8979

eISSN： 1089-7550
Composition dependence of spin-orbit torque in Pt<inf>1-</inf><inf>x </inf>Mn<inf>x </inf>/CoFeB heterostructures Peer-reviewed

K. Vihanga De Zoysa, Samik Duttagupta, Ryuichi Itoh, Yutaro Takeuchi, Hideo Ohno, Shunsuke Fukami

Applied Physics Letters　117　(1)　012402-012402　2020/07/06

DOI： 10.1063/5.0011448 　

ISSN： 0003-6951

eISSN： 1077-3118
Current distribution in metallic multilayers from resistance measurements

Ondřej Stejskal, André Thiaville, Jaroslav Hamrle, Shunsuke Fukami, Hideo Ohno

Physical Review B　101　(23)　2020/06/15

DOI： 10.1103/PhysRevB.101.235437 　

ISSN： 2469-9950

eISSN： 2469-9969
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu

IEEE Symposium on VLSI Circuits, Digest of Technical Papers　2020-June　2020/06

DOI： 10.1109/VLSICircuits18222.2020.9162774 　
Probabilistic computing based on spintronics technology

Shunsuke Fukami, William A. Borders, Ahmed Z. Pervaiz, Kerem Y. Camsari, Supriyo Datta, Hideo Ohno

2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020　21-22　2020/06

DOI： 10.1109/SNW50361.2020.9131622 　

ISSN： 2161-4636
Visualizing magnetic structure in 3d nanoscale ni-fe gyroid networks International-journal Peer-reviewed

Justin Llandro, David M. Love, András Kovács, Jan Caron, Kunal N. Vyas, Attila Kákay, Ruslan Salikhov, Kilian Lenz, Jürgen Fassbender, Maik R.J. Scherer, Christian Cimorra, Ullrich Steiner, Crispin H.W. Barnes, Rafal E. Dunin-Borkowski, Shunsuke Fukami, Hideo Ohno

Nano Letters　20　(5)　3642-3650　2020/05/13

DOI： 10.1021/acs.nanolett.0c00578 　

ISSN： 1530-6984

eISSN： 1530-6992
Scaling magnetic tunnel junction down to single-digit nanometers - Challenges and prospects Peer-reviewed

Butsurin Jinnai, Kyota Watanabe, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　116　(16)　160501-160501　2020/04

DOI： 10.1063/5.0004434 　

ISSN： 0003-6951

eISSN： 1077-3118
A Mathematical Model for a Synapse Device Based on Spintronics

Taku SATO, Yushi KIKUCHI, Aleksandr KURENKOV, Yoshihiko HORIO, Shunsuke FUKAMI

Technical Report, IEICE　NLP2019-122　55-60　2020/03
Crystal orientation and anomalous Hall effect of sputter-deposited non-collinear antiferromagnetic Mn<inf>3</inf>Sn thin films

Juyoung Yoon, Yutaro Takeuchi, Ryuichi Itoh, Shun Kanai, Shunsuke Fukami, Hideo Ohno

Applied Physics Express　13　(1)　2020/01/01

DOI： 10.7567/1882-0786/ab5874 　

ISSN： 1882-0778

eISSN： 1882-0786
Mathematical modeling of spintronics neuron devices based on thermal dynamics

Yushi KIKUCHI, Taku SATO, Aleksandr KURENKOV, Yoshihiko HORIO, Shunsuke FUKAMI

Technical Report, IEICE　NLP2019-104　96-104　2020/01
Stack structure and temperature dependence of spin-orbit torques in heterostructures with antiferromagnetic PtMn

Ryuichi Itoh, Yutaro Takeuchi, Samik Duttagupta, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　115　(24)　2019/12/09

DOI： 10.1063/1.5129829 　

ISSN： 0003-6951

eISSN： 1077-3118
Applications of spintronics devices to brainmorphic computing hardware Invited

Yoshihiko Horio, Shunsuke Fukami

Bulletin of Solid State Physics and Applications　25　(5)　167-172　2019/12
Spin-orbit torque neuron and synapse devices for brainmorphic computing Peer-reviewed

Yoshihiko Horio, Aleksandr Kurenkov, Shunsuke Fukami, Hideo Ohno

Proceedings of International Symposium on Nonlinear Theory and Its Applications　78-78　2019/12
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology Peer-reviewed

H. Honjo, T. V.A. Nguyen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, T. Endoh

Technical Digest - International Electron Devices Meeting, IEDM　2019-December　2019/12

DOI： 10.1109/IEDM19573.2019.8993443 　

ISSN： 0163-1918
Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles International-journal Peer-reviewed

Takaaki Dohi, Samik DuttaGupta, Shunsuke Fukami, Hideo Ohno

Nature Communications　10　(1)　5153-5153　2019/12/01

DOI： 10.1038/s41467-019-13182-6 　

ISSN： 2041-1723

eISSN： 2041-1723
Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers Peer-reviewed

Yong Chang Lau, Zhendong Chi, Tomohiro Taniguchi, Masashi Kawaguchi, Goro Shibata, Naomi Kawamura, Motohiro Suzuki, Shunsuke Fukami, Atsushi Fujimori, Hideo Ohno, Masamitsu Hayashi

Physical Review Materials　3　(10)　2019/10/25

DOI： 10.1103/PhysRevMaterials.3.104419 　

ISSN： 2475-9953

eISSN： 2475-9953
Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime Peer-reviewed

Takaharu Saino, Shun Kanai, Motoya Shinozaki, Butsurin Jinnai, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　115　(14)　2019/09/30

DOI： 10.1063/1.5121157 　

ISSN： 0003-6951

eISSN： 1077-3118
Integer factorization using stochastic magnetic tunnel junctions International-journal Peer-reviewed

William A. Borders, Ahmed Z. Pervaiz, Shunsuke Fukami, Kerem Y. Camsari, Hideo Ohno, Supriyo Datta

Nature　573　(7774)　390-393　2019/09/19

DOI： 10.1038/s41586-019-1557-9 　

ISSN： 0028-0836

eISSN： 1476-4687
Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance

Atsushi Okada, Yutaro Takeuchi, Kaito Furuya, Chaoliang Zhang, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Physical Review Applied　12　(1)　2019/07/23

DOI： 10.1103/PhysRevApplied.12.014040 　

eISSN： 2331-7019
Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching International-journal Peer-reviewed

Aleksandr Kurenkov, Samik DuttaGupta, Chaoliang Zhang, Shunsuke Fukami, Yoshihiko Horio, Hideo Ohno

Advanced Materials　31　(23)　e1900636　2019/06/06

DOI： 10.1002/adma.201900636 　

ISSN： 0935-9648

eISSN： 1521-4095
Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin-orbit torque switching Peer-reviewed

A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, H. Ohno

Advanced Materials　31　(23)　1900636　2019/04

DOI： 10.1002/adma.201900636 　
Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems Peer-reviewed

Takaaki Dohi, Samik Duttagupta, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　114　(4)　042405　2019/01/28

DOI： 10.1063/1.5084095 　

ISSN： 0003-6951

eISSN： 1077-3118
Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance Peer-reviewed

Yu Takahashi, Yutaro Takeuchi, Chaoliang Zhang, Butsurin Jinnai, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　114　(1)　012410　2019/01/07

DOI： 10.1063/1.5075542 　

ISSN： 0003-6951

eISSN： 1077-3118
Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions Peer-reviewed

K. Watanabe, B. Jinnai, S. Fukami, H. Sato, H. Ohno

Nature Communications　9　(1)　2018/12/01

DOI： 10.1038/s41467-018-03003-7 　

ISSN： 2041-1723

eISSN： 2041-1723
Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires Peer-reviewed

Butsurin Jinnai, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　113　(21)　212403　2018/11/19

DOI： 10.1063/1.5045814 　

ISSN： 0003-6951

eISSN： 1077-3118
Angle dependent magnetoresistance in heterostructures with antiferromagnetic and non-magnetic metals Peer-reviewed

S. Duttagupta, R. Itoh, S. Fukami, H. Ohno

Applied Physics Letters　113　(20)　202404　2018/11/12

DOI： 10.1063/1.5049566 　

ISSN： 0003-6951
An effect of capping-layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/capping-layer structure Peer-reviewed

M. Bersweiler, E. C.I. Enobio, S. Fukami, H. Sato, H. Ohno

Applied Physics Letters　113　(17)　172401　2018/10/22

DOI： 10.1063/1.5050486 　

ISSN： 0003-6951
Perspective: Spintronic synapse for artificial neural network Invited Peer-reviewed

Shunsuke Fukami, Hideo Ohno

Journal of Applied Physics　124　(15)　151904　2018/10/21

DOI： 10.1063/1.5042317 　

ISSN： 0021-8979

eISSN： 1089-7550
Characterization of spin-orbit torque-controlled synapse device for artificial neural network applications Peer-reviewed

William A. Borders, Shunsuke Fukami, Hideo Ohno

Japanese Journal of Applied Physics　57　(10)　1002B2　2018/10

DOI： 10.7567/JJAP.57.1002B2 　

ISSN： 0021-4922

eISSN： 1347-4065
Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis Peer-reviewed

N. Ichikawa, T. Dohi, A. Okada, H. Sato, S. Fukami, H. Ohno

Applied Physics Letters　112　(20)　2018/05/14

DOI： 10.1063/1.5035487 　

ISSN： 0003-6951
Spin-orbit torques in high-resistivity-W/CoFeB/MgO Peer-reviewed

Yutaro Takeuchi, Chaoliang Zhang, Atsushi Okada, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　112　(19)　2018/05/07

DOI： 10.1063/1.5027855 　

ISSN： 0003-6951

eISSN： 1077-3118
Time and spatial evolution of spin-orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes Peer-reviewed

Chaoliang Zhang, Shunsuke Fukami, Samik Dutta Gupta, Hideo Sato, Hideo Ohno

Japanese Journal of Applied Physics　57　(4)　2018/04

DOI： 10.7567/JJAP.57.04FN02 　

ISSN： 0021-4922

eISSN： 1347-4065
Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement Peer-reviewed

Eli Christopher Inocencio Enobio, Mathias Bersweiler, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Japanese Journal of Applied Physics　57　(4)　2018/04

DOI： 10.7567/JJAP.57.04FN08 　

ISSN： 0021-4922

eISSN： 1347-4065
Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance Peer-reviewed

Atsushi Okada, Shun Kanai, Shunsuke Fukami, Hideo Sato, Hideo Ohno

Applied Physics Letters　112　(17)　2018/04

DOI： 10.1063/1.5026418 　

ISSN： 0003-6951

eISSN： 1077-3118
Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device Peer-reviewed

William A. Borders, Shunsuke Fukami, Hideo Ohno

IEEE Transactions on Magnetics　53　(11)　2017/11

DOI： 10.1109/TMAG.2017.2703817 　

ISSN： 0018-9464

eISSN： 1941-0069
Spintronics based random access memory: a review Peer-reviewed

Sabpreet Bhatti, Rachid Sbiaa, Atsufumi Hirohata, Hideo Ohno, Shunsuke Fukami, S. N. Piramanayagam

Materials Today　20　(9)　530-548　2017/11

DOI： 10.1016/j.mattod.2017.07.007 　

ISSN： 1369-7021

eISSN： 1873-4103
Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures Peer-reviewed

S. DuttaGupta, T. Kanemura, C. Zhang, A. Kurenkov, S. Fukami, H. Ohno

Applied Physics Letters　111　(18)　2017/10/30

DOI： 10.1063/1.5005593 　

ISSN： 0003-6951

eISSN： 1077-3118
Spin-orbit torque induced magnetization switching in Co/Pt multilayers Peer-reviewed

Butsurin Jinnai, Chaoliang Zhang, Aleksandr Kurenkov, Mathias Bersweiler, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters　111　(10)　2017/09/04

DOI： 10.1063/1.5001171 　

ISSN： 0003-6951

eISSN： 1077-3118
An artificial neural network with an analogue spin-orbit torque device Peer-reviewed

W. A. Borders, H. Akima, S. Fukami, S. Moriya, S. Kurihara, A. Kurenkov, Y. Horio, S. Sato, H. Ohno

2017 IEEE International Magnetics Conference, INTERMAG 2017　2017/08/10
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/INTMAG.2017.8007937 　
Magnetization switching schemes for nanoscale three-terminal spintronics devices Peer-reviewed

Shunsuke Fukami, Hideo Ohno

Japanese Journal of Applied Physics　56　(8)　2017/08

DOI： 10.7567/JJAP.56.0802A1 　

ISSN： 0021-4922

eISSN： 1347-4065
Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers Peer-reviewed

Kyota Watanabe, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

Japanese Journal of Applied Physics　56　(8)　2017/08

DOI： 10.7567/JJAP.56.0802B2 　

ISSN： 0021-4922

eISSN： 1347-4065
Use of analog spintronics device in performing neuro-morphic computing functions Peer-reviewed

Shunsuke Fukami, William A. Borders, Aleksandr Kurenkov, Chaoliang Zhang, Samik DuttaGupta, Hideo Ohno

2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings　2018-January　1-3　2017/06/28

DOI： 10.1109/E3S.2017.8246168 　
Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field Peer-reviewed

N. Ohshima, H. Sato, S. Kanai, J. Llandro, S. Fukami, F. Matsukura, H. Ohno

AIP Advances　7　(5)　055927　2017/05/01

DOI： 10.1063/1.4977224 　

ISSN： 2158-3226

eISSN： 2158-3226
Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO Peer-reviewed

S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, H. Ohno

AIP Advances　7　(5)　055918　2017/05/01

DOI： 10.1063/1.4974889 　

ISSN： 2158-3226

eISSN： 2158-3226
Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices International-journal Peer-reviewed

Jonathan J. Bean, Mitsuhiro Saito, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Yuichi Ikuhara, Keith P. McKenna

Scientific Reports　7　45594-45594　2017/04

DOI： 10.1038/srep45594 　

ISSN： 2045-2322

eISSN： 2045-2322
スピン軌道トルク磁気メモリデバイスを用いた自己連想記憶

秋間学尚, Borders William, 深見俊輔, 守谷哲, 栗原祥太, Kurenkov Alexander, 下橋亮太, 堀尾喜彦, 佐藤茂雄, 大野英男

電子情報通信学会総合大会講演論文集　S-31-S-31　2017/03/22
アナログ磁気メモリデバイスを用いた自己連想記憶システムの構築

栗原祥太, 秋間学尚, William A. Borders, 深見俊輔, 守谷哲, Aleksandr Kurenkov, 下橋亮太, 堀尾喜彦, 佐藤茂雄, 大野英男

電子情報通信学会技術報告　116　(521)　127-132　2017/03/13
Publisher:
ISSN： 0913-5685
Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures Peer-reviewed

A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, H. Ohno

Applied Physics Letters　110　(9)　092410　2017/02/27

DOI： 10.1063/1.4977838 　

ISSN： 0003-6951

eISSN： 1077-3118
Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation Peer-reviewed

William A. Borders, Hisanao Akima, Shunsuke Fukami, Satoshi Moriya, Shouta Kurihara, Yoshihiko Horio, Shigeo Sato, Hideo Ohno

BIOINSPIRATION & BIOMIMETICS　12　(1)　2017/02

DOI： 10.7567/APEX.10.013007 　

ISSN： 1748-3182

eISSN： 1748-3190
Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation Peer-reviewed

William A. Borders, Hisanao Akima, Shunsuke Fukami, Satoshi Moriya, Shouta Kurihara, Yoshihiko Horio, Shigeo Sato, Hideo Ohno

Applied Physics Express　10　(1)　013007　2017/01

DOI： 10.7567/APEX.10.013007 　

ISSN： 1882-0778

eISSN： 1882-0786
Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO Peer-reviewed

C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, H. Ohno

Applied Physics Letters　109　(19)　192405　2016/11/07

DOI： 10.1063/1.4967475 　

ISSN： 0003-6951

eISSN： 1077-3118
A sub-ns three-terminal spin-orbit torque induced switching device Peer-reviewed

Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno

Digest of Technical Papers - Symposium on VLSI Technology　2016-September　7573379　2016/09/21

DOI： 10.1109/VLSIT.2016.7573379 　

ISSN： 0743-1562
A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuration Peer-reviewed

S. Fukami, T. Anekawa, C. Zhang, H. Ohno

Nature Nanotechnology　11　(7)　621-625　2016/07/01

DOI： 10.1038/nnano.2016.29 　

ISSN： 1748-3387

eISSN： 1748-3395
Magnetic Properties of CoFeB-MgO Stacks with Different Buffer-Layer Materials (Ta or Mo) Peer-reviewed

Kyota Watanabe, Shunsuke Fukami, Hideo Sato, Fumihiro Matsukura, Hideo Ohno

IEEE Transactions on Magnetics　52　(7)　7378950　2016/07

DOI： 10.1109/TMAG.2016.2514525 　

ISSN： 0018-9464

eISSN： 1941-0069
Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions with Perpendicular Anisotropy Peer-reviewed

Shinya Ishikawa, Eli C.I. Enobio, Hideo Sato, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

IEEE Transactions on Magnetics　52　(7)　7378992　2016/07

DOI： 10.1109/TMAG.2016.2517098 　

ISSN： 0018-9464

eISSN： 1941-0069
Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system. International-journal Peer-reviewed

Shunsuke Fukami, Chaoliang Zhang, Samik DuttaGupta, Aleksandr Kurenkov, Hideo Ohno

Nature materials　15　(5)　535-41　2016/05

DOI： 10.1038/nmat4566 　

ISSN： 1476-1122

eISSN： 1476-4660
Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system Peer-reviewed

Shunsuke Fukami, Chaoliang Zhang, Samik Duttagupta, Aleksandr Kurenkov, Hideo Ohno

Nature Materials　15　(5)　535-541　2016/05/01

DOI： 10.1038/nmat4566 　

ISSN： 1476-1122

eISSN： 1476-4660
Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system Peer-reviewed

Shunsuke Fukami, Chaoliang Zhang, Samik Duttagupta, Aleksandr Kurenkov, Hideo Ohno

Nature Materials　15　(5)　535-541　2016/05/01

DOI： 10.1038/nmat4566 　

ISSN： 1476-1122

eISSN： 1476-4660
Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal Peer-reviewed

S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura, H. Ohno

Nature Physics　12　(4)　333-336　2016/04

DOI： 10.1038/nphys3593 　

ISSN： 1745-2473

eISSN： 1745-2481
Electric field control of Skyrmions in magnetic nanodisks Peer-reviewed

Y. Nakatani, M. Hayashi, S. Kanai, S. Fukami, H. Ohno

Applied Physics Letters　108　(15)　152403　2016/04

DOI： 10.1063/1.4945738 　

ISSN： 0003-6951

eISSN： 1077-3118
Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20nm Peer-reviewed

Shunsuke Fukami, Toru Iwabuchi, Hideo Sato, Hideo Ohno

Japanese Journal of Applied Physics　55　(4)　04EN01　2016/04

DOI： 10.7567/JJAP.55.04EN01 　

ISSN： 0021-4922

eISSN： 1347-4065
Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions International-journal Peer-reviewed

Zhongchang Wang, Mitsuhiro Saito, Keith P. McKenna, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Yuichi Ikuhara

Nano Letters　16　(3)　1530-1536　2016/03/09

DOI： 10.1021/acs.nanolett.5b03627 　

ISSN： 1530-6984

eISSN： 1530-6992
Three-Terminal Spintronics Devices for Integrated Circuits Invited Peer-reviewed

Shunsuke Fukami, Chaoliang Zhang, Samik DuttaGupta, Aleksandr Kurenkov, Tetsuro Anekawa, Hideo Ohno

7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016　2016

DOI： 10.1109/INEC.2016.7589372 　

ISSN： 2159-3523
Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis Peer-reviewed

Y. Takeuchi, H. Sato, S. Fukami, F. Matsukura, H. Ohno

Applied Physics Letters　107　(15)　152405　2015/10/12

DOI： 10.1063/1.4933256 　

ISSN： 0003-6951

eISSN： 1077-3118
Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

Digest of Technical Papers - Symposium on VLSI Technology　2015-August　C172-C173　2015/08/25

DOI： 10.1109/VLSIT.2015.7223644 　

ISSN： 0743-1562
Three-terminal spintronics memory devices with perpendicular anisotropy Peer-reviewed

H. Ohno, S. Fukami

2015 IEEE International Magnetics Conference, INTERMAG 2015　7157427　2015/07/14

DOI： 10.1109/INTMAG.2015.7157427 　
Proposal and demonstration of a new spin-orbit torque induced switching device Peer-reviewed

S. Fukami, T. Anekawa, C. Zhang, H. Ohno

2015 IEEE International Magnetics Conference, INTERMAG 2015　7156648　2015/07/14

DOI： 10.1109/INTMAG.2015.7156648 　
Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO Peer-reviewed

C. Zhang, S. Fukami, H. Sato, F. Matsukura, H. Ohno

Applied Physics Letters　107　(1)　012401　2015/07/06

DOI： 10.1063/1.4926371 　

ISSN： 0003-6951

eISSN： 1077-3118
Thermal stability of a magnetic domain wall in nanowires Peer-reviewed

S. Fukami, J. Ieda, H. Ohno

Physical Review B - Condensed Matter and Materials Physics　91　(23)　235401　2015/06/04

DOI： 10.1103/PhysRevB.91.235401 　

ISSN： 1098-0121

eISSN： 1550-235X
Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses Peer-reviewed

Kyota Watanabe, Shinya Ishikawa, Hideo Sato, Shoji Ikeda, Michihiko Yamanouchi, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

Japanese Journal of Applied Physics　54　(4)　04DM04　2015/04

DOI： 10.7567/JJAP.54.04DM04 　

ISSN： 0021-4922

eISSN： 1347-4065
Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm Peer-reviewed

S. Ikeda, H. Sato, H. Honjo, E. C.I. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh, H. Ohno

Technical Digest - International Electron Devices Meeting, IEDM　2015-February　(February)　33.2.1-33.2.4　2015/02/20

DOI： 10.1109/IEDM.2014.7047160 　

ISSN： 0163-1918
Spintronics: from basic research to VLSI application Peer-reviewed

S. Kanai, F. Matsukura, H. Sato, S. Fukami

Association of Aisa Pacific Physical Societies, AAPPS　25　4-11　2015/02
Localized precessional mode of domain wall controlled by magnetic field and dc current Peer-reviewed

Ryo Hiramatsu, Kab Jin Kim, Takuya Taniguchi, Takayuki Tono, Takahiro Moriyama, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Ohno, Yoshinobu Nakatani, Teruo Ono

Applied Physics Express　8　(2)　023003-023003　2015/02/01

DOI： 10.7567/APEX.8.023003 　

ISSN： 1882-0778

eISSN： 1882-0786
23pAD-1 Magnetic domain-wall oscillator controlled by magnetic field and dc current

Hiramatsu R., Kim Kab-Jin, Taniguchi T., Tono T., Moriyama T., Fukami S., Yamanouchi M., Ohno H., Nakatani Y., Ono T.

Meeting Abstracts of the Physical Society of Japan　70　1196-1196　2015
Publisher: The Physical Society of Japan (JPS)
DOI： 10.11316/jpsgaiyo.70.1.0_1196 　

ISSN： 2189-079X
Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY)　2015-August　7231371-C173　2015

DOI： 10.1109/VLSIC.2015.7231371 　

ISSN： 0743-1562
CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures Peer-reviewed

Eli Christopher I. Enobio, Hideo Sato, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

IEEE Magnetics Letters　6　5700303　2015

DOI： 10.1109/LMAG.2015.2475718 　

ISSN： 1949-307X
Domain wall motion device for nonvolatile memory and logic - size dependence of device properties Peer-reviewed

Shunsuke Fukami, Michihiko Yamanouchi, Shoji Ikeda, Hideo Ohno

IEEE Transactions on Magnetics　50　(11)　6971556　2014/11/01

DOI： 10.1109/TMAG.2014.2321396 　

ISSN： 0018-9464

eISSN： 1941-0069
Material stack design with high tolerance to process-induced damage in domain wall motion device Peer-reviewed

Hiroaki Honjo, Shunsuke Fukami, Kunihiko Ishihara, Keizo Kinoshita, Yukihide Tsuji, Ayuka Morioka, Ryusuke Nebashi, Keiichi Tokutome, Noboru Sakimura, Michio Murahata, Sadahiko Miura, Tadahiko Sugibayashi, Naoki Kasai, Hideo Ohno

IEEE Transactions on Magnetics　50　(11)　6971768　2014/11/01

DOI： 10.1109/TMAG.2014.2325019 　

ISSN： 0018-9464

eISSN： 1941-0069
Process-induced damage and its recovery for a CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy axis Peer-reviewed

Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Hideo Sato, Kotaro Mizunuma, Keiichi Tokutome, Michio Murahata, Shoji Ikeda, Sadahiko Miura, Naoki Kasai, Hideo Ohno

Japanese Journal of Applied Physics　53　(10)　103001　2014/10/01

DOI： 10.7567/JJAP.53.103001 　

ISSN： 0021-4922

eISSN： 1347-4065
Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm Peer-reviewed

H. Sato, E. C.I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, H. Ohno

Applied Physics Letters　105　(6)　062403　2014/08/11

DOI： 10.1063/1.4892924 　

ISSN： 0003-6951

eISSN： 1077-3118
Distribution of critical current density for magnetic domain wall motion Peer-reviewed

S. Fukami, M. Yamanouchi, Y. Nakatani, K. J. Kim, T. Koyama, D. Chiba, S. Ikeda, N. Kasai, T. Ono, H. Ohno

Journal of Applied Physics　115　(17)　17D508　2014/05/07

DOI： 10.1063/1.4866394 　

ISSN： 0021-8979

eISSN： 1089-7550
Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer Peer-reviewed

S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

Journal of Applied Physics　115　(17)　17C719　2014/05/07

DOI： 10.1063/1.4862724 　

ISSN： 0021-8979

eISSN： 1089-7550
Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, S. Fukami, H. Sato, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

Journal of Applied Physics　115　(17)　17B742　2014/05/07

DOI： 10.1063/1.4868332 　

ISSN： 0021-8979

eISSN： 1089-7550
Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer Peer-reviewed

H. Honjo, S. Fukami, K. Ishihara, R. Nebashi, K. Kinoshita, K. Tokutome, M. Murahata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

Journal of Applied Physics　115　(17)　17B750　2014/05/07

DOI： 10.1063/1.4868623 　

ISSN： 0021-8979

eISSN： 1089-7550
Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis Peer-reviewed

C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno

Journal of Applied Physics　115　(17)　2014/05/07

DOI： 10.1063/1.4863260 　

ISSN： 0021-8979

eISSN： 1089-7550
Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs Peer-reviewed

Hideo Sato, Shoji Ikeda, Shunsuke Fukami, Hiroaki Honjo, Shinya Ishikawa, Michihiko Yamanouchi, Kotaro Mizunuma, Fumihiro Matsukura, Hideo Ohno

Japanese Journal of Applied Physics　53　(4 SPEC. ISSUE)　04EM02　2014/04

DOI： 10.7567/JJAP.53.04EM02 　

ISSN： 0021-4922

eISSN： 1347-4065
Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion Peer-reviewed

Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Ryusuke Nebashi, Keiichi Tokutome, Michio Murahata, Sadahiko Miura, Naoki Kasai, Shoji Ikeda, Hideo Ohno

Japanese Journal of Applied Physics　53　(3 SPEC. ISSUE 2)　03DF03　2014/03

DOI： 10.7567/JJAP.53.03DF03 　

ISSN： 0021-4922

eISSN： 1347-4065
Effect of spin Hall torque on current-induced precessional domain wall motion Peer-reviewed

Yoko Yoshimura, Tomohiro Koyama, Daichi Chiba, Yoshinobu Nakatani, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Ohno, Kab Jin Kim, Takahiro Moriyama, Teruo Ono

Applied Physics Express　7　(3)　033005　2014/03

DOI： 10.7567/APEX.7.033005 　

ISSN： 1882-0778

eISSN： 1882-0786
Journal of Applied Physics Peer-reviewed

C. Zhang, M. Yamanouchi, H .Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno

Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis　115　17C714(1)-17C714(3)　2014/01/29
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing Peer-reviewed

Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi

Proceedings - IEEE International Symposium on Circuits and Systems　1588-1591　2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI： 10.1109/ISCAS.2014.6865453 　

ISSN： 0271-4310
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications Peer-reviewed

Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi

Digest of Technical Papers - IEEE International Solid-State Circuits Conference　57　184-185　2014

DOI： 10.1109/ISSCC.2014.6757392 　

ISSN： 0193-6530
Advances in spintronics devices for microelectronics - From spin-transfer torque to spin-orbit torque Peer-reviewed

S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno

Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC　684-691　2014

DOI： 10.1109/ASPDAC.2014.6742970 　

ISSN： 2153-6961
MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability Peer-reviewed

H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

J. Magn. Soc. Jpn.　38　(2-2)　56-60　2014
Publisher:
DOI： 10.3379/msjmag.1403R002 　

ISSN： 1882-2924
A Delay Circuit with 4-Terminal Magnetic-Random-Access-Memory Device for Power-Efficient Time-Domain Signal Processing Peer-reviewed

Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi

2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)　1588-1591　2014

DOI： 10.1109/ISCAS.2014.6865453 　

ISSN： 0271-4302
Applied Physics Letters Peer-reviewed

C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno

Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO　103　262407(1)-262407(3)　2013/12/31
Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO Peer-reviewed

Chaoliang Zhang, Michihiko Yamanouchi, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

Applied Physics Letters　103　(26)　262407　2013/12/23

DOI： 10.1063/1.4859656 　

ISSN： 0003-6951

eISSN： 1077-3118
Fabrication of a Perpendicular-MTJ-Based Compact Nonvolatile Programmable Switch Using Shared-Write-Control-Transistor Structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

Abst. 58th Annual Conference on Magnetism and Magnetic Materials　233　2013/11
Current-induced effective fields detected by magnetotrasport measurements Peer-reviewed

Masashi Kawaguchi, Kazutoshi Shimamura, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno, Takahiro Moriyama, Daichi Chiba, Teruo Ono

Applied Physics Express　6　(11)　113002　2013/11

DOI： 10.7567/APEX.6.113002 　

ISSN： 1882-0778

eISSN： 1882-0786
Applied Physics Express Peer-reviewed

M. Kawaguchi, K. Shimamura, S. Fukami, F. Matsukura, H. Ohno, T. Moriyama, D. Chiba, T. Ono

Current-induced effectivve fields detected by magnetotransport measurements　6　113002(1)-113002(4)　2013/10/18
Demonstration of a Nonvolatile Processor Core Chip with Software-Controlled Three-Terminal MRAM Cells for Standby-Power Critical Applications Peer-reviewed

R. Nebashi, Y. Tsuji, H. Honjo, N. Sakimura, A. Morioka, K. Tokutome, S. Miura, S. Fukami, M. Yamanouchi, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

2013 International Conference on Solid State Devices and Materials (SSDM)　M-8-3　1102-1103　2013/09/24
Nature Communications Peer-reviewed

S. Fukami, M. Yamanouchi, S. Ikeda, H. Ohno

Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents　4　1-7　2013/08/15
Domain wall pinning by a stray field from NiFe on a Co/Ni nanowire Peer-reviewed

R. Hiramatsu, T. Koyama, H. Hata, T. Ono, D. Chiba, S. Fukami, N. Ishiwata

Journal of the Korean Physical Society　63　(3)　608-611　2013/08

DOI： 10.3938/jkps.63.608 　

ISSN： 0374-4884

eISSN： 1976-8524
IEEE Transactions on Magnetics Peer-reviewed

H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis　49　(7)　4437-4440　2013/07/07
Electric field modulation of magnetic anisotropy in MgO/Co/Pt structure Peer-reviewed

Kihiro Yamada, Haruka Kakizakai, Kazutoshi Shimamura, Masashi Kawaguchi, Shunsuke Fukami, Nobuyuki Ishiwata, Daichi Chiba, Teruo Ono

Applied Physics Express　6　(7)　073004　2013/07

DOI： 10.7567/APEX.6.073004 　

ISSN： 1882-0778

eISSN： 1882-0786
CoNi Films with perpendicular magnetic anisotropy prepared by alternate monoatomic layer deposition Peer-reviewed

Shunsuke Fukami, Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Hideo Ohno

Applied Physics Express　6　(7)　073010　2013/07

DOI： 10.7567/APEX.6.073010 　

ISSN： 1882-0778

eISSN： 1882-0786
Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers Peer-reviewed

Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Seiji Mitani, See Hun Yang, Stuart S.P. Parkin, Hideo Ohno

Applied Physics Letters　102　(24)　242405　2013/06/17

DOI： 10.1063/1.4811269 　

ISSN： 0003-6951

eISSN： 1077-3118
Electrical endurance of Co/Ni wire for magnetic domain wall motion device Peer-reviewed

S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, H. Ohno

Applied Physics Letters　102　(22)　222410　2013/06/03

DOI： 10.1063/1.4809734 　

ISSN： 0003-6951
Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper Peer-reviewed

Michihiko Yamanouchi, Lin Chen, Junyeon Kim, Masamitsu Hayashi, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

Applied Physics Letters　102　(21)　212408　2013/05/27

DOI： 10.1063/1.4808033 　

ISSN： 0003-6951

eISSN： 1077-3118
Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer Peer-reviewed

S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

Journal of Applied Physics　113　(17)　17C721　2013/05/07

DOI： 10.1063/1.4798499 　

ISSN： 0021-8979

eISSN： 1089-7550
スピン論理集積回路における基本ゲートの高信頼化技術 Peer-reviewed

辻幸秀, 根橋竜介, 崎村昇, 森岡あゆ香, 本庄弘明, 徳留圭一, 三浦貞彦, 鈴木哲広, 深見俊輔, 木下啓藏, 羽生貴弘, 遠藤哲郎, 笠井直記, 大野英男, 杉林

信学技報,　113　(1)　41-46　2013/04/01
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

More details Close

Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability for the logic use. The overheads of this technique, such as cell area, read margin, and write power consumption, have also been investigated.
Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy Peer-reviewed

Hironobu Tanigawa, Tetsuhiro Suzuki, Shunsuke Fukami, Katsumi Suemitsu, Norikazu Ohshima, Eiji Kariyada

Applied Physics Letters　102　(15)　152410　2013/04

DOI： 10.1063/1.4802266 　

ISSN： 0003-6951
Nature Materials Peer-reviewed

J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani, H. Ohno

Layer thickness dependence of the current-induced effective field vector in Ta/CoFeB/MgO　12　240-245　2013/03
Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO. International-journal Peer-reviewed

Junyeon Kim, Jaivardhan Sinha, Masamitsu Hayashi, Michihiko Yamanouchi, Shunsuke Fukami, Tetsuhiro Suzuki, Seiji Mitani, Hideo Ohno

Nature materials　12　(3)　240-5　2013/03

DOI： 10.1038/nmat3522 　

ISSN： 1476-1122
Layer thickness dependence of the current-induced effective field vector in Ta vertical bar CoFeB vertical bar MgO Peer-reviewed

Junyeon Kim, Jaivardhan Sinha, Masamitsu Hayashi, Michihiko Yamanouchi, Shunsuke Fukami, Tetsuhiro Suzuki, Seiji Mitani, Hideo Ohno

NATURE MATERIALS　12　(3)　240-245　2013/03

DOI： 10.1038/NMAT3522 　

ISSN： 1476-1122

eISSN： 1476-4660
Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO Peer-reviewed

Junyeon Kim, Jaivardhan Sinha, Masamitsu Hayashi, Michihiko Yamanouchi, Shunsuke Fukami, Tetsuhiro Suzuki, Seiji Mitani, Hideo Ohno

Nature Materials　12　(3)　240-245　2013/03

DOI： 10.1038/nmat3522 　

ISSN： 1476-1122

eISSN： 1476-4660
600MHz Nonvolatile Latch Based on a New MTJ/CMOS Hybrid Circuit Concept Peer-reviewed

Tetsuo Endoh, Shuta Togashi, Fumitaka Iga, Yasuhiro Yoshida, Takashi Ohsawa, Hiroki Koike, Shunsuke Fukami, Shoji Ikeda, Naoki Kasai, Noboru Sakimura, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2013/01/31
Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm Peer-reviewed

H. Sato, T. Yamamoto, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F. Matsukura, N. Kasai, H. Ohno

Technical Digest - International Electron Devices Meeting, IEDM　6724550　2013

DOI： 10.1109/IEDM.2013.6724550 　

ISSN： 0163-1918
20-nm magnetic domain wall motion memory with ultralow-power operation Peer-reviewed

S. Fukami, M. Yamanouchi, K. J. Kim, T. Suzuki, N. Sakimura, D. Chiba, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, H. Ohno

Technical Digest - International Electron Devices Meeting, IEDM　6724553　2013

DOI： 10.1109/IEDM.2013.6724553 　

ISSN： 0163-1918
Fabrication of a 99%-energy-less nonvolatile multi-functional CAM chip using hierarchical power gating for a massively-parallel full-text-search engine Peer-reviewed

S. Matsunaga, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, M. Natsui, A. Mochizuki, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

Digest of Technical Papers - Symposium on VLSI Technology　6576611　2013

ISSN： 0743-1562
Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets Peer-reviewed

T. Suzuki, H. Tanigawa, Y. Kobayashi, K. Mori, Y. Ito, Y. Ozaki, K. Suemitsu, T. Kitamura, K. Nagahara, E. Kariyada, N. Ohshima, S. Fukami, M. Yamanouchi, S. Ikeda, M. Hayashi, M. Sakao, H. Ohno

Digest of Technical Papers - Symposium on VLSI Technology　6576703　2013

ISSN： 0743-1562
MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis Peer-reviewed

Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

IEEE Transactions on Magnetics　49　(7)　4437-4440　2013

DOI： 10.1109/TMAG.2013.2251326 　

ISSN： 0018-9464

eISSN： 1941-0069
Two-barrier stability that allows low-power operation in current-induced domain-wall motion International-journal Peer-reviewed

Kab Jin Kim, Ryo Hiramatsu, Tomohiro Koyama, Kohei Ueda, Yoko Yoshimura, Daichi Chiba, Kensuke Kobayashi, Yoshinobu Nakatani, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Ohno, Hiroshi Kohno, Gen Tatara, Teruo Ono

Nature Communications　4　2011-2011　2013

DOI： 10.1038/ncomms3011 　

ISSN： 2041-1723

eISSN： 2041-1723
Direct observation of domain wall motion in Co/Pt wire under gate electric field Peer-reviewed

Haruka Kakizakai, Kihiro Yamada, Masashi Kawaguchi, Kazutoshi Shimamura, Shunsuke Fukami, Nobuyuki Ishiwata, Daichi Chiba, Teruo Ono

Japanese Journal of Applied Physics　52　(7 PART 1)　070206　2013/01

DOI： 10.7567/JJAP.52.070206 　

ISSN： 0021-4922

eISSN： 1347-4065
Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents Peer-reviewed

S. Fukami, M. Yamanouchi, S. Ikeda, H. Ohno

Nature Communications　4　2293　2013

DOI： 10.1038/ncomms3293 　

ISSN： 2041-1723

eISSN： 2041-1723
Spin Peer-reviewed

S. Ikeda, H. Sato, M. Yamanouchi, H. Gan, K. Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, N. Kasai, H. Ohno

Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI　2　(3)　1240003(1)-1240003(12)　2012/12/04

DOI： 10.4018/ijfsa.2012070101 　
Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile vlsi Peer-reviewed

Shoji Ikeda, Hideo Sato, Michihiko Yamanouchi, Huadong Gan, Katsuya Miura, Kotaro Mizunuma, Shun Kanai, Shunsuke Fukami, Fumihiro Matsukura, Naoki Kasai, Hideo Ohno

SPIN　2　(3)　1240003　2012/09/01

DOI： 10.1142/S2010324712400036 　

ISSN： 2010-3247

eISSN： 2010-3255
Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown Peer-reviewed

T. Koyama, K. Ueda, K. J. Kim, Y. Yoshimura, D. Chiba, K. Yamada, J. P. Jamet, A. Mougin, A. Thiaville, S. Mizukami, S. Fukami, N. Ishiwata, Y. Nakatani, H. Kohno, K. Kobayashi, T. Ono

Nature Nanotechnology　7　(10)　635-639　2012/08/26

DOI： 10.1038/nnano.2012.151 　

ISSN： 1748-3387

eISSN： 1748-3395
Observation of magnetic domain-wall dynamics transition in Co/Ni multilayered nanowires Peer-reviewed

Kab Jin Kim, D. Chiba, K. Kobayashi, S. Fukami, M. Yamanouchi, H. Ohno, Soong Geun Je, Sug Bong Choe, T. Ono

Applied Physics Letters　101　(2)　022407　2012/07/09

DOI： 10.1063/1.4733667 　

ISSN： 0003-6951
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure Peer-reviewed

H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

Applied Physics Letters　101　(2)　022414　2012/07/09

DOI： 10.1063/1.4736727 　

ISSN： 0003-6951
Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction Peer-reviewed

H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

Applied Physics Letters　101　022414　2012/07

DOI： 10.1063/1.4753816 　
Current-induced domain wall motion in perpendicularly magnetized Co/Ni nanowire under in-plane magnetic fields Peer-reviewed

Yoko Yoshimura, Tomohiro Koyama, Daichi Chiba, Yoshinobu Nakatani, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Ohno, Teruo Ono

Applied Physics Express　5　(6)　063001　2012/06

DOI： 10.1143/APEX.5.063001 　

ISSN： 1882-0778

eISSN： 1882-0786
Electric field effect on magnetization of an Fe ultrathin film Peer-reviewed

Masashi Kawaguchi, Kazutoshi Shimamura, Shimpei Ono, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno, Daichi Chiba, Teruo Ono

Applied Physics Express　5　(6)　063307　2012/06

DOI： 10.1143/APEX.5.063007 　

ISSN： 1882-0778

eISSN： 1882-0786
Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire Peer-reviewed

K. Ueda, T. Koyama, R. Hiramatsu, D. Chiba, S. Fukami, H. Tanigawa, T. Suzuki, N. Ohshima, N. Ishiwata, Y. Nakatani, K. Kobayashi, T. Ono

Applied Physics Letters　100　(20)　202407　2012/05/14

DOI： 10.1063/1.4718599 　

ISSN： 0003-6951

eISSN： 1077-3118
Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeBMgO nanostructures Peer-reviewed

Masamitsu Hayashi, Michihiko Yamanouchi, Shunsuke Fukami, Jaivardhan Sinha, Seiji Mitani, Hideo Ohno

Applied Physics Letters　100　(19)　192411　2012/05/07

DOI： 10.1063/1.4711016 　

ISSN： 0003-6951
3端子磁壁移動型セルを用いた不揮発性コンテントアドレッサブルメモリ Peer-reviewed

根橋竜介, 崎村昇, 辻幸秀, 深見俊輔, 本庄弘明, 齊藤信作, 三浦貞彦, 石綿延行, 木下啓蔵, 羽生貴弘, 遠藤哲郎, 笠井直記, 大野英男, 杉林直彦

信学技報　112　(15)　49-54　2012/04/01
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

More details Close

A 5-ns search operation of a non-volatile content addressable memory was demonstrated. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM.
Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits Peer-reviewed

H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

Journal of Applied Physics　111　(7)　07C709　2012/04

DOI： 10.1063/1.3675268 　

ISSN： 0021-8979

eISSN： 1089-7550
Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions Peer-reviewed

H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

Journal of Applied Physics　111　(7)　07C903　2012/04

DOI： 10.1063/1.3671437 　

ISSN： 0021-8979

eISSN： 1089-7550
Attenuation of propagating spin wave induced by layered nanostructures Peer-reviewed

K. Sekiguchi, T. N. Vader, K. Yamada, S. Fukami, N. Ishiwata, S. M. Seo, S. W. Lee, K. J. Lee, T. Ono

Applied Physics Letters　100　(13)　132411　2012/03/26

DOI： 10.1063/1.3699020 　

ISSN： 0003-6951
Electrical control of Curie temperature in cobalt using an ionic liquid film Peer-reviewed

K. Shimamura, D. Chiba, S. Ono, S. Fukami, N. Ishiwata, M. Kawaguchi, K. Kobayashi, T. Ono

Applied Physics Letters　100　(12)　122402　2012/03/19

DOI： 10.1063/1.3695160 　

ISSN： 0003-6951
A Content Adddressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells Invited Peer-reviewed

R. Nebashi, N. Sakimura, Y Tsuji, S. Fukami, H. Honjo, S. Saito, S.Miura, N.Ishiwata, K. kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

The 2nd CSIS International Symposium on Spintronics-based VLSIs　F7　24-24　2012/02/02
Effect of current on domain wall depinning field in Co/Ni nanowire Peer-reviewed

Ryo Hiramatsu, Kouta Kondou, Tomohiro Koyama, Yoko Yoshimura, Daichi Chiba, Shunsuke Fukami, Nobuyuki Ishiwata, Teruo Ono

Japanese Journal of Applied Physics　51　(2 PART 1)　028005　2012/02

DOI： 10.1143/JJAP.51.028005 　

ISSN： 0021-4922

eISSN： 1347-4065
Domain wall dynamics driven by spin transfer torque and the spinorbit field International-journal Peer-reviewed

Masamitsu Hayashi, Yoshinobu Nakatani, Shunsuke Fukami, Michihiko Yamanouchi, Seiji Mitani, Hideo Ohno

Journal of Physics Condensed Matter　24　(2)　024221-024221　2012/01/18

DOI： 10.1088/0953-8984/24/2/024221 　

ISSN： 0953-8984

eISSN： 1361-648X
High-speed simulator including accurate MTJ models for spintronics integrated circuit design Peer-reviewed

Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Hiroaki Honjo, Tadahiko Sugibayashi, Hiroki Koike, Takashi Ohsawa, Shunsuke Fukami, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems　1971-1974　2012

DOI： 10.1109/ISCAS.2012.6271663 　

ISSN： 0271-4302
Spintronics primitive gate with high error correction efficiency 6(P <inf>error</inf>) ² for logic-in memory architecture Peer-reviewed

Y. Tsuji, R. Nebashi, N. Sakimura, A. Morioka, H. Honjo, K. Tokutome, S. Miura, T. Suzuki, S. Fukami, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

Digest of Technical Papers - Symposium on VLSI Technology　63-64　2012

DOI： 10.1109/VLSIT.2012.6242462 　

ISSN： 0743-1562
High-speed and reliable domain wall motion device: Material design for embedded memory and logic application Peer-reviewed

S. Fukami, M. Yamanouchi, T. Koyama, K. Ueda, Y. Yoshimura, K. J. Kim, D. Chiba, H. Honjo, N. Sakimura, R. Nebashi, Y. Kato, Y. Tsuji, A. Morioka, K. Kinoshita, S. Miura, T. Suzuki, H. Tanigawa, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, H. Ohno

Digest of Technical Papers - Symposium on VLSI Technology　61-62　2012

DOI： 10.1109/VLSIT.2012.6242461 　

ISSN： 0743-1562
Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization Peer-reviewed

D. Chiba, M. Kawaguchi, S. Fukami, N. Ishiwata, K. Shimamura, K. Kobayashi, T. Ono

Nature Communications　3　888　2012

DOI： 10.1038/ncomms1888 　

ISSN： 2041-1723

eISSN： 2041-1723
Scalability prospect of three-terminal magnetic domain-wall motion device Peer-reviewed

Shunsuke Fukami, Nobuyuki Ishiwata, Naoki Kasai, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Hideo Ohno

IEEE Transactions on Magnetics　48　(7)　2152-2157　2012

DOI： 10.1109/TMAG.2012.2187792 　

ISSN： 0018-9464

eISSN： 1941-0069
Electrical control of the ferromagnetic phase transition in cobalt at room temperature Peer-reviewed

D. Chiba, S. Fukami, K. Shimamura, N. Ishiwata, K. Kobayashi, T. Ono

Nature Materials　10　(11)　853-856　2011/11

DOI： 10.1038/nmat3130 　

ISSN： 1476-1122

eISSN： 1476-4660
Electrical control of the ferromagnetic phase transition in cobalt at room temperature Peer-reviewed

D. Chiba, S. Fukami, K. Shimamura, N. Ishiwata, K. Kobayashi, T. Ono

NATURE MATERIALS　10　(11)　853-856　2011/11

DOI： 10.1038/NMAT3130 　

ISSN： 1476-1122
Wire width dependence of threshold current density for domain wall motion in Co/Ni nanowires Peer-reviewed

Tomohiro Koyama, Daichi Chiba, Kohei Ueda, Hironobu Tanigawa, Shunsuke Fukami, Tetsuhiro Suzuki, Norikazu Ohshima, Nobuyuki Ishiwata, Yoshinobu Nakatani, Teruo Ono

IEEE Transactions on Magnetics　47　(10)　3089-3091　2011/10

DOI： 10.1109/TMAG.2011.2157308 　

ISSN： 0018-9464
Electrical investigation of notch width dependence of domain wall structure in Co/Ni Nanowires Peer-reviewed

Kouta Kondou, Ryo Hiramatsu, Tomohiro Koyama, Yoshinobu Nakatani, Daichi Chiba, Shunsuke Fukami, Nobuyuki Ishiwata, Teruo Ono

Japanese Journal of Applied Physics　50　(7 PART 1)　073002　2011/07

DOI： 10.1143/JJAP.50.073002 　

ISSN： 0021-4922

eISSN： 1347-4065
Current-induced magnetic domain wall motion in Co/Ni nanowire at low temperature Peer-reviewed

Kohei Ueda, Tomohiro Koyama, Daichi Chiba, Kazutoshi Shimamura, Hironobu Tanigawa, Shunsuke Fukami, Tetsuhiro Suzuki, Norikazu Ohshima, Nobuyuki Ishiwata, Yoshinobu Nakatani, Teruo Ono

Applied Physics Express　4　(6)　063003　2011/06

DOI： 10.1143/APEX.4.063003 　

ISSN： 1882-0778

eISSN： 1882-0786
Magnetic field insensitivity of magnetic domain wall velocity induced by electrical current in Co/Ni nanowire Peer-reviewed

T. Koyama, D. Chiba, K. Ueda, H. Tanigawa, S. Fukami, T. Suzuki, N. Ohshima, N. Ishiwata, Y. Nakatani, T. Ono

Applied Physics Letters　98　(19)　192509　2011/05/09

DOI： 10.1063/1.3590713 　

ISSN： 0003-6951
Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire Peer-reviewed

T. Suzuki, S. Fukami, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, H. Ohno

Applied Physics Letters　98　(14)　142505　2011/04

DOI： 10.1063/1.3579155 　

ISSN： 0003-6951
Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire Peer-reviewed

T. Koyama, D. Chiba, K. Ueda, K. Kondou, H. Tanigawa, S. Fukami, T. Suzuki, N. Ohshima, N. Ishiwata, Y. Nakatani, K. Kobayashi, T. Ono

Nature Materials　10　(3)　194-197　2011/03

DOI： 10.1038/nmat2961 　

ISSN： 1476-1122

eISSN： 1476-4660
Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire Peer-reviewed

S. Fukami, T. Suzuki, Y. Nakatani, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, H. Ohno

Applied Physics Letters　98　(8)　082504　2011/02/21

DOI： 10.1063/1.3558917 　

ISSN： 0003-6951
Three-terminal domain-wall cell architectures Peer-reviewed

N. Ishiwata, S. Fukami, S. Saitho, R. Nebashi, N. Sakimura, H. Honjo, S. Miura, T. Sugibayashi, Y. Thuji, M. Murahata, H. Ohno, T. Endoh, T. Hanyu, N. Kasai

International Magnetics Conference 2011 abstract　2011
Current-induced Domain Wall Motion MRAM Peer-reviewed

N. Ishiwata, S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, S. Saito, R.Nebashi, N.Sakimura, H. Honjo, K. Mori, T. Igarashi, H. Tanigawa, S. Miura, T. Sugibayashi

Int Magnetics Conf/Int Conf on Magnetism & Magnetic Materials Abstract　2011
A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching Peer-reviewed

T. Endoh, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno

Technical Digest - International Electron Devices Meeting, IEDM　6131487　2011

DOI： 10.1109/IEDM.2011.6131487 　

ISSN： 0163-1918
Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control Peer-reviewed

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Shunsuke Fukami, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

IEEE Symposium on VLSI Circuits, Digest of Technical Papers　298-299　2011
A content addressable memory using magnetic domain wall motion cells Peer-reviewed

R. Nebashi, N. Sakimura, Y. Tsuji, S. Fukami, H. Honjo, S. Saito, S. Miura, N. Ishiwata, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

IEEE Symposium on VLSI Circuits, Digest of Technical Papers　300-301　2011
Current-induced domain wall motion in Co/Ni nano-wires with different Co and Ni thicknesses Peer-reviewed

K. Ueda, D. Chiba, T. Koyama, G. Yamada, H. Tanigawa, S. Fukami, T. Suzuki, N. Ohshima, N. Ishiwata, Y. Nakatani, T. Ono

Journal of Physics: Conference Series　266　(1)　012110　2011

DOI： 10.1088/1742-6596/266/1/012110 　

ISSN： 1742-6588

eISSN： 1742-6596
Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire Peer-reviewed

Hironobu Tanigawa, Katsumi Suemitsu, Shunsuke Fukami, Norikazu Ohshima, Tetsuhiro Suzuki, Eiji Kariyada, Nobuyuki Ishiwata

Applied Physics Express　4　(1)　013007　2011/01

DOI： 10.1143/APEX.4.013007 　

ISSN： 1882-0778

eISSN： 1882-0786
Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites Peer-reviewed

Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima, Nobuyuki Ishiwata

Journal of Applied Physics　108　(11)　113914　2010/12/01

DOI： 10.1063/1.3518046 　

ISSN： 0021-8979

eISSN： 1089-7550
Stack structure dependence of Co/Ni multilayer for current-induced domain wall motion Peer-reviewed

Shunsuke Fukami, Tetsuhiro Suzuki, Hironobu Tanigawa, Norikazu Ohshima, Nobuyuki Ishiwata

Applied Physics Express　3　(11)　113002　2010/11

DOI： 10.1143/APEX.3.113002 　

ISSN： 1882-0778

eISSN： 1882-0786
Control of multiple magnetic domain walls by current in a Co/Ni nano-wire Peer-reviewed

Daichi Chiba, Gen Yamada, Tomohiro Koyama, Kohei Ueda, Hironobu Tanigawa, Shunsuke Fukami, Tetsuhiro Suzuki, Norikazu Ohshima, Nobuyuki Ishiwata, Yoshinobu Nakatani, Teruo Ono

Applied Physics Express　3　(7)　073004　2010/07

DOI： 10.1143/APEX.3.073004 　

ISSN： 1882-0778

eISSN： 1882-0786
Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory Peer-reviewed

Norikazu Ohshima, Hideaki Numata, Shunsuke Fukami, Kiyokazu Nagahara, Tetsuhiro Suzuki, Nobuyuki Ishiwata, Keiki Fukumoto, Toyohiko Kinoshita, Teruo Ono

Journal of Applied Physics　107　(10)　103912　2010/05/15

DOI： 10.1063/1.3427555 　

ISSN： 0021-8979

eISSN： 1089-7550
Current Status and Future Challemge of Embedded High-speed MRAM Peer-reviewed

S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, S. Saitoh, R. Nebashi, N. Sakimura, H. Honjo, K. Mori, E. Kariyada, Y. Kato, K. Suemitsu, H. Tanigawa, K. Kinoshita, S. Miura, N. Ishiwata, T. Sugibayashi

International Conference on Solid State Devices and Materials Proceedings　2010
Evaluation of scalability for current-driven domain wall motion in a Co/Ni multilayer strip for memory applications Peer-reviewed

Tetsuhiro Suzuki, Shunsuke Fukami, Kiyokazu Nagahara, Norikazu Ohshima, Nobuyuki Ishiwata

IEEE Transactions on Magnetics　45　(10)　3776-3779　2009/10

DOI： 10.1109/TMAG.2009.2023069 　

ISSN： 0018-9464

eISSN： 1941-0069
Domain wall motion induced by electric current in a perpendicularly magnetized Co/Ni nano-wire Peer-reviewed

Hironobu Tanigawa, Tomohiro Koyama, Gen Yamada, Daichi Chiba, Shinya Kasai, Shunsuke Fukami, Tetsuhiro Suzuki, Norikazu Ohshima, Nobuyuki Ishiwata, Yoshinobu Nakatani, Teruo Ono

Applied Physics Express　2　(5)　053002　2009/05

DOI： 10.1143/APEX.2.053002 　

ISSN： 1882-0778

eISSN： 1882-0786
High-speed Magnetic Memory based on Spin-Torque Domain Wall Motion Peer-reviewed

N. Ishiwata, S. Fukami, T.Suzuki, K. Nagahara, N. Ohshima, H. Honjo, K. Mori, T. Igarashi, S. Miura, T. Sugibayashi, K. Ozaki, S. Saito, R. Nebashi, N. Sakimura

Int Conf on Solid State Devices & Materials Proceedings　2009
Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires Peer-reviewed

S. Fukami, Y. Nakatani, T. Suzuki, K. Nagahara, N. Ohshima, N. Ishiwata

Applied Physics Letters　95　(23)　232504　2009

DOI： 10.1063/1.3271827 　

ISSN： 0003-6951
Low-current perpendicular domain wall motion cell for scalable high-speed MRAM Peer-reviewed

S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, Y. Ozaki, S. Saito, R. Nebashi, N. Sakimura, H. Honjo, K. Mori, C. Igarashi, S. Miura, N. Ishiwata, T. Sugibayashi

Digest of Technical Papers - Symposium on VLSI Technology　230-231　2009

ISSN： 0743-1562
A 90nm 12ns 32Mb 2T1MTJ MRAM Peer-reviewed

R. Nebashi, N. Sakimura, H. Honjo, S. Saito, Y. Ito, S. Miura, Y. Kato, K. Mori, Y. Ozaki, Y. Kobayashi, N. Ohshima, K. Kinoshita, T. Suzuki, K. Nagahara, N. Ishiwata, K. Suemitsu, S. Fukami, H. Hada, T. Sugibayashi, N. Kasai

Digest of Technical Papers - IEEE International Solid-State Circuits Conference　462-464　2009

DOI： 10.1109/ISSCC.2009.4977508 　

ISSN： 0193-6530
Performance of shape-varying magnetic tunneling junction for high-speed magnetic random access memory cells Peer-reviewed

H. Honjo, S. Fukami, R. Nebashi, T. Suzuki, N. Ishiwata, S. Miura, T. Sugibayashi

Journal of Applied Physics　105　(7)　07C921　2009

DOI： 10.1063/1.3062825 　

ISSN： 0021-8979
Intrinsic threshold current density of domain wall motion in nanostrips with perpendicular magnetic anisotropy for use in low-write-current MRAMs Peer-reviewed

Shunsuke Fukami, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara, Nobuyuki Ishiwata

IEEE Transactions on Magnetics　44　(11 PART 2)　2539-2542　2008/11

DOI： 10.1109/TMAG.2008.2002370 　

ISSN： 0018-9464
Current-driven domain wall motion, nucleation, and propagation in a Co/Pt multi-layer strip with a stepped structure Peer-reviewed

Tetsuhiro Suzuki, Shunsuke Fukami, Kiyokazu Nagahara, Norikazu Ohshima, Nobuyuki Ishiwata

IEEE Transactions on Magnetics　44　(11 PART 2)　2535-2538　2008/11

DOI： 10.1109/TMAG.2008.2002486 　

ISSN： 0018-9464

eISSN： 1941-0069
Control of domain wall position by electrical current in structured Co/Ni wire with perpendicular magnetic anisotropy Peer-reviewed

Tomohiro Koyama, Gen Yamada, Hironobu Tanigawa, Shinya Kasai, Norikazu Ohshima, Shunsuke Fukami, Nobuyuki Ishiwata, Yoshinobu Nakatani, Teruo Ono

Applied Physics Express　1　(10)　1013031-1013033　2008/10

DOI： 10.1143/APEX.1.101303 　

ISSN： 1882-0778

eISSN： 1882-0786
Low write-current magnetic random access memory cell with anisotropy-varied free layers Peer-reviewed

S. Fukami, H. Honjo, T. Suzuki, N. Ishiwata

Journal of Applied Physics　104　(11)　113901　2008

DOI： 10.1063/1.3032894 　

ISSN： 0021-8979
Analysis of current-driven domain wall motion from pinning sites in nanostrips with perpendicular magnetic anisotropy Peer-reviewed

T. Suzuki, S. Fukami, N. Ohshima, K. Nagahara, N. Ishiwata

Journal of Applied Physics　103　(11)　113913　2008

DOI： 10.1063/1.2938843 　

ISSN： 0021-8979
Micromagnetic analysis of current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy Peer-reviewed

S. Fukami, T. Suzuki, N. Ohshima, K. Nagahara, N. Ishiwata

Journal of Applied Physics　103　(7)　07E718　2008

DOI： 10.1063/1.2830964 　

ISSN： 0021-8979
Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell Peer-reviewed

H. Honjo, R. Nebashi, T. Suzuki, S. Fukami, N. Ishiwata, T. Sugibayashi, N. Kasai

Journal of Applied Physics　103　(7)　07A711　2008

DOI： 10.1063/1.2839288 　

ISSN： 0021-8979
Reduction of critical current density for domain wall motion in U-shaped magnetic patterns Peer-reviewed

N. Ohshima, H. Numata, T. Suzuki, S. Fukami, K. Nagahara, N. Ishiwata

Journal of Applied Physics　103　(7)　07D914　2008

DOI： 10.1063/1.2830544 　

ISSN： 0021-8979
Current-driven domain wall motion in CoCrPt wires with perpendicular magnetic anisotropy Peer-reviewed

Hironobu Tanigawa, Kouta Kondou, Tomohiro Koyama, Kunihiro Nakano, Shinya Kasai, Norikazu Ohshima, Shunsuke Fukami, Nobuyuki Ishiwata, Teruo Ono

Applied Physics Express　1　(1)　011301　2008/01

DOI： 10.1143/APEX.1.011301 　

ISSN： 1882-0778

eISSN： 1882-0786
A 16-Mb toggle MRAM with burst modes Peer-reviewed

Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken Ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Norikazu Ohshima, Hiromitsu Hada, Nobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara

IEEE Journal of Solid-State Circuits　42　(11)　2378-2385　2007/11

DOI： 10.1109/JSSC.2007.906195 　

ISSN： 0018-9200

eISSN： 1558-173X
Reduction of writing field distribution in a magnetic random access memory with toggle switching Peer-reviewed

Shunsuke Fukami, Hiroaki Honjo, Tetsuhiro Suzuki, Nobuyuki Ishiwata

IEEE Transactions on Magnetics　43　(8)　3512-3516　2007/08

DOI： 10.1109/TMAG.2007.900573 　

ISSN： 0018-9464
Scalable cell technology utilizing domain wall motion for high-speed MRAM Peer-reviewed

H. Numata, T. Suzuki, N. Ohshima, S. Fukami, K. Nagahara, N. Ishiwata, N. Kasai

Digest of Technical Papers - Symposium on VLSI Technology　232-233　2007

DOI： 10.1109/VLSIT.2007.4339705 　

ISSN： 0743-1562
A 16Mb toggle MRAM with burst modes Peer-reviewed

Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken Ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Hiromitsu Hada, Nobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara

2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006　299-302　2006

DOI： 10.1109/ASSCC.2006.357910 　
Nanostructure of CoPtCr-SiO <inf>2</inf> granular films for magnetic recording media Peer-reviewed

Shunsuke Fukami, Nobuo Tanaka, Takehito Shimatsu, Osamu Kitakami

Materials Transactions　46　(8)　1802-1806　2005/08

DOI： 10.2320/matertrans.46.1802 　

ISSN： 1345-9678

eISSN： 1347-5320
HRTEM and EELS studies of L1<inf>0</inf>-ordered FePt nano-clusters on MgO films prepared below 673 K Peer-reviewed

Shunsuke Fukami, Akichika Ohno, Nobuo Tanaka

Materials Transactions　45　(7)　2012-2017　2004/07

DOI： 10.2320/matertrans.45.2012 　

ISSN： 1345-9678

eISSN： 1347-5320
Microstructure change of vanadium clusters in ZnO crystalline films by heat-treatment Peer-reviewed

Huayong Pan, Akichika Ohno, Shunsuke Fukami, Jun Yamasaki, Nobuo Tanaka

Nanotechnology　15　(6)　S420-S427　2004/06

DOI： 10.1088/0957-4484/15/6/020 　

ISSN： 0957-4484
Electron tomography of nano-magnetic materials less than 1 nm resolution Peer-reviewed

N. Tanaka, A. Ohno, S. Fukami, J. Yamasaki

Microscopy and Microanalysis　10　(SUPPL. 2)　1176-1177　2004

DOI： 10.1017/S1431927604887046 　

ISSN： 1431-9276
Theoretical consideration of the stability of an L1<inf>0</inf> magnetic phase in Fe-(Pd, Pt) alloy clusters Peer-reviewed

S. Fukami, N. Tanaka

Philosophical Magazine Letters　84　(1)　33-40　2004/01

DOI： 10.1080/09500830310001628257 　

ISSN： 0950-0839

eISSN： 1362-3036
HRTEM Studies of nm-Size FePd Particles Embedded in MgO after Annealing over 920 K Peer-reviewed

Huayong Pan, Shunsuke Fukami, Jun Yamasaki, Nobuo Tanaka

Materials Transactions　44　(10)　2048-2054　2003/10

DOI： 10.2320/matertrans.44.2048 　

ISSN： 1345-9678

eISSN： 1347-5320
HRTEM studies of mn-size FePd particles embedded in MgO after annealing over 920K Peer-reviewed

HY Pan, S Fukami, J Yamasaki, N Tanaka

MATERIALS TRANSACTIONS　44　(10)　2048-2054　2003/10

DOI： 10.2320/matertrans.44.2048 　

ISSN： 1345-9678

eISSN： 1347-5320

Show all ︎Show first 5

Misc. 71

Spintronics probabilistic computer Realization of proposals by Feynman and Hinton utilizing a spintronics device

深見俊輔

応用物理　94　(4)　2025

ISSN： 0369-8009
Guest Editorial: Special Issue on Spin Pumping and Spin-Orbit Torques in Magnetic Heterostructures

Akash Kumar, Shunsuke Fukami, Johan Åkerman

SPIN　14　(2)　2024/06/01

DOI： 10.1142/S2010324724020016 　

ISSN： 2010-3247

eISSN： 2010-3255
Directed Self-Assembly of Diamond Networks in Triblock Terpolymer Films on Patterned Substrates

Doha Abdelrahman, René Iseli, Michimasa Musya, Butsurin Jinnai, Shunsuke Fukami, Takeshi Yuasa, Hiroaki Sai, Ulrich B. Wiesner, Matthias Saba, Bodo D. Wilts, Ullrich Steiner, Justin Llandro, Ilja Gunkel

ACS Applied Materials and Interfaces　15　(50)　57981-57991　2023/12/20

DOI： 10.1021/acsami.3c10619 　

ISSN： 1944-8244

eISSN： 1944-8252
Thermal fluctuation of the nanomagnet for probabilistic Bit Invited Peer-reviewed

Shun Kanai, Shunsuke Fukami, Hideo Ohno

78　(5)　256-261　2023/05

DOI： 10.11316/butsuri.78.5_256 　
Coherent antiferromagnetic spintronics

Jiahao Han, Ran Cheng, Luqiao Liu, Hideo Ohno, Shunsuke Fukami

Nature Materials　22　(6)　684-695　2023

DOI： 10.1038/s41563-023-01492-6 　

ISSN： 1476-1122

eISSN： 1476-4660
Domain wall memory: Physics, materials, and devices

Durgesh Kumar, Tianli Jin, Rachid Sbiaa, Mathias Kläui, Subhankar Bedanta, Shunsuke Fukami, Dafine Ravelosona, See Hun Yang, Xiaoxi Liu, S. N. Piramanayagam

Physics Reports　958　1-35　2022/05/05
Publisher: Elsevier BV
DOI： 10.1016/j.physrep.2022.02.001 　

ISSN： 0370-1573
Neuromorphic spintronics

J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, M. D. Stiles

Nature Electronics　3　(7)　360-370　2020/07/01

DOI： 10.1038/s41928-019-0360-9 　

eISSN： 2520-1131
不揮発性スピントロニクス素子技術ー大容量化、高速化、多機能化に向けた取り組みー Invited

深見俊輔, 大野英男

日本学術振興会先端ナノデバイス・材料テクノロジー第151委員会平成30年度第6回研究会資料「スピントロニクスの新たな展開と展望」　17-25　2019/02
限界に迫る極微細磁気トンネル接合素子 Invited Peer-reviewed

深見俊輔, 大野英男

物理科学雑誌『パリティ』　33　(12)　60-63　2018/12
Spin-orbit torque magnetization switching using antiferromagnetic metals Invited

Magnetics Japan　13　(5)　223-228　2018/11
アナログスピン軌道トルクを用いた人工ニューラルネットワーク Invited

深見俊輔, William A. Borders, Aleksandr Kurenkov, 張超亮, Samik DuttaGupta, 大野英男

日本磁気学会研究会資料　216　2018/01
Analog spintronics devices and its application to artificial neural networks

117　(247)　7-12　2017/10/19
Publisher: 電子情報通信学会
ISSN： 0913-5685
Analog spintronics devices and its application to artificial neural networks

41　(34)　7-12　2017/10
Publisher: 映像情報メディア学会
ISSN： 1342-6893
High-speed magnetization switching by spin-orbit torque and its applications Invited

86　(7)　565-569　2017/07
Publisher: 応用物理学会
ISSN： 0369-8009
Key enabler for higher-performance IoT - Ultrafast nonvolatile spintronics memory Invited

FUKAMI Shunsuke

Ceramics　51　(11)　801-801　2016/11
A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device : Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits Invited

116　(172)　99-103　2016/08
Publisher: 映像情報メディア学会
ISSN： 1342-6893
スピン軌道トルク磁化反転とその集積回路応用 Invited

深見俊輔, 張超亮, 姉川哲朗, Samik DuttaGupta, Aleksandr Kurenkov, 大野英男

日本磁気学会研究会資料　208　15-22　2016/06
A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications

SAKIMURA Noboru, TSUJI Yukihide, NEBASHI Ryusuke, HONJO Hiroaki, MORIOKA Ayuka, ISHIHARA Kunihiko, KINOSHITA Keizo, FUKAMI Shunsuke, MIURA Sadahiko, KASAI Naoki, ENDOH Tetsuo, OHNO Hideo, HANYU Takahiro, SUGIBAYASHI Tadahiko

Technical report of IEICE. ICD　114　(175)　39-44　2014/08/04
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

More details Close

A 90-nm fully nonvolatile microcontroller employing three-terminal eMRAM cell into both nonvolatile logic and memory circuits was demonstrated. It achieved 20-MHz operating frequency, zero standby leakage by power gating technique and 120-ns wakeup time without forwarding of re-boot code from memory.
27aPS-19 Electric field modulation of magnetic anisotropy in MgO/Co/Pt

Yamada K, Kakizakai H, Shimamura K, Kawaguchi M, Fukami S, Ishiwata N, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　69　(0)　479-479　2014
Publisher: The Physical Society of Japan
ISSN： 1342-8349
27aPS-31 Layer thickness dependence of current induced effective magnetic fields

Kawaguchi M, Shimamura K, Fukami S, Matsukura F, Ohno H, Moriyama T, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　69　(0)　481-481　2014
Publisher: The Physical Society of Japan
ISSN： 1342-8349
スピントロニクス論理集積回路の実現に向けた３端子磁壁移動素子の開発 Invited

深見俊輔, 大野英男

工業材料　62　(1)　32-33　2014/01
Publisher: 日刊工業新聞社
Influence of spin Hall effect for current-induced domain wall motion in a perpendicularly magnetized Co/Ni nanowire

Yoshimura Y., Koyama T., Moriyama T., Kim Kab-Jin, Chiba D., Nakatani Y., Fukami S., Yamanouchi M., Ohno H., Ono T.

Meeting abstracts of the Physical Society of Japan　68　(2)　415-415　2013/08/26
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
27pXA-4 Thickness dependence of current induced domain wall motion in perpendicularly magnetized Co/Ni multilayer

Tanigawa Hironobu, Suzuki Tetsuhiro, Fukami Shunsuke, Suemitsu Katsumi, Ohshima Norikazu, Kariyada Eiji

Meeting abstracts of the Physical Society of Japan　68　(1)　539-539　2013/03/26
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
27pXA-6 Current pulse width dependence of magnetic domain wall motion in the presence of bias magnetic field

Kim Kab-Jin, Chiba D., Nakatani Y., Fukami S., Yamanouchi M., Ohno H., Ono T.

Meeting abstracts of the Physical Society of Japan　68　(1)　540-540　2013/03/26
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
Direct observation of domain wall motion in Co/Pt wire under gate electric field (II)

Kakizakai H, Yamada K, Kawaguchi M, Shimamura K, Fukami S, Ishiwata N, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　68　(0)　366-366　2013
Publisher: The Physical Society of Japan
ISSN： 1342-8349
26aPS-15 Anomalous magnetoresistance effect in ultra-thin ferromagnetic films with structural inversion asymmetry

Kawaguchi M, Shimamura K, Fukami S, Matsukura F, Ohno H, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　68　(0)　501-501　2013
Publisher: The Physical Society of Japan
ISSN： 1342-8349
27aXA-7 Observation of Domain Wall Motion in a Co/Pt Wire under Gate Electric Field

Kakizakai H, Kawaguchi M, Yamada K, Shimamura K, Fukami S, Ishiwata N, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　68　(0)　536-536　2013
Publisher: The Physical Society of Japan
ISSN： 1342-8349
27aXA-10 Electric-field control of magnetic anisotropy in Co ultra-thin film

Yamada K, Kakizakai H, Shimamura K, Kawaguchi M, Fukami S, Ishiwata N, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　68　(0)　536-536　2013
Publisher: The Physical Society of Japan
ISSN： 1342-8349
Electric-field modulation of surface perpendicular magnetic anisotropy in Pt/Co/MgO

Yamada K, Kakizakai H, Shimanura K, Kawaguchi M, Fukami S, Ishiwata N, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　68　(0)　364-364　2013
Publisher: The Physical Society of Japan
ISSN： 1342-8349
Field Effect in Ferromagnetic Transition Metal Ultla-Thin Film

Kawaguchi M, Shimamura K, Fukami S, Matsukura F, Ohno H, Moriyama T, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　68　(0)　416-416　2013
Publisher: The Physical Society of Japan
ISSN： 1342-8349
Electric field control of magnetism in transition metals

CHIBA D, SHIMAMURA K, KAWAGUCHI M, ONO S, FUKAMI S, ISHIWATA N, KOBAYASHI K, ONO T

日本磁気学会研究会資料 = Bulletin of Topical Symposium of the Magnetics Society of Japan　186　1-3　2012/11/02
Publisher: 日本磁気学会
ISSN： 1882-2940
電流誘起磁壁移動デバイス開発

深見俊輔, 大野英男

応用電子分科会会誌　18　(5)　2012/11
27aAA-9 Current-induced domain wall motion in a perpendicularly magnetized Co/Ni nanowire under in-plane magnetic field

Yoshimura Y, Koyama T, Chiba D, Fukami S, Yamanouchi M, Ohno H, Nakatani Y, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　533-533　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
20aCC-10 Current-induced domain wall motion in a perpendicularly magnetized Co/Ni nanowire under in-plane magnetic field (II)

Yoshimura Y, Koyama T, Chiba D, Fukami S, Yamanouchi M, Ohno H, Nakatani Y, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　427-427　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
27aAA-8 Temperature Dependence of Spin Polarization of Current in Co/Ni Nanowire Estimated from Current-Induced Magnetic Domain Wall Motion

Ueda K, Nakatani Y, Ono T, Koyama T, Hiramatsu R, Chiba D, Fukami S, Tanigawa H, Suzuki T, Ohshima N, Ishiwata N

Meeting Abstracts of the Physical Society of Japan　67　(0)　533-533　2012
Publisher: 一般社団法人日本物理学会
ISSN： 1342-8349
24aPS-14 Electrical Field Control of Magnetization of Ultra-thin Film Using Ionic Liquid

Shimamura K, Chiba D, Kawaguchi M, Ono S, Fukami S, Ishiwata N, Kobayashi K, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　478-478　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
24aPS-27 Field Effect in Ferromagnetic Transition Metal Ultra-Thin Film

Kawaguchi M, Chiba D, Fukami S, Shimamura K, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　481-481　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
24aPS-28 Detection of magnetization rotation in domain wall induced by spin transfer torque

Hiramatsu R, Kondou K, Koyama T, Chiba D, Fukami S, Ishiwata N, Nakatani Y, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　481-481　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
24aPS-29 Additivity of magnetic domain wall velocities induced by current and field

Koyama T, Ueda K, Chiba D, Fukami S, Ishiwata N, Kohno H, Nakatani Y, Kobayashi K, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　481-481　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
19aCC-10 Field Effect in Fe Ultla-Thin Film Using an Ionic Liquid Film

Kawaguchi M, Shimamura K, Ono S, Fukami S, Matsukura F, Ohno H, Chiba D, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　413-413　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
19aCC-12 Detection of magnetization rotation in domain wall induced by spin transfer torque in Co/Ni nanowire III

Hiramatsu R, Koyama T, Chiba D, Fukami S, Ishiwata N, Nakatani Y, Ono T

Meeting Abstracts of the Physical Society of Japan　67　(0)　414-414　2012
Publisher: The Physical Society of Japan
ISSN： 1342-8349
磁気トンネル接合素子のプラズマプロセス誘起ダメージとリカバリーの試み

木下啓藏, 山本直志, 本庄弘明, 末光克巳, 石綿延行, 大嶋則和, 深見俊輔, 山本弘輝, 森田正, 笠井直記, 杉林直彦, 池田正二, 大野英男

応用物理学会学術講演会講演予稿集(CD-ROM)　72nd　ROMBUNNO.31P-M-5　2011/08/16
26aPS-24 Domain wall de-pinning field under dc current

Hiramatsu R, Kondou K, Chiba D, Fukami S, Ishiwata N, Ono T

Meeting Abstracts of the Physical Society of Japan　66　(0)　489-489　2011
Publisher: The Physical Society of Japan
ISSN： 1342-8349
26aPS-35 Temperature dependence of current-induced domain wall (DW) motion in Co/Ni nano-wires II

Ueda K, Ono T, Koyama T, Chiba D, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　66　(0)　492-492　2011
Publisher: The Physical Society of Japan
ISSN： 1342-8349
28aHF-8 Domain Wall Oscillator 2

Kondou K, Nakatani Y, Hiramatsu R, Chiba D, Fukami S, Ishiwata N, Ono T

Meeting Abstracts of the Physical Society of Japan　66　(0)　515-515　2011
Publisher: The Physical Society of Japan
ISSN： 1342-8349
21aPS-31 Detection of magnetization precession in domain wall induced by the spin transfer torque in Co/Ni nanowire

Hiramatsu R, Kondou K, Koyama T, Chiba D, Fukami S, Ishiwata N, Nakatani Y, Ono T

Meeting Abstracts of the Physical Society of Japan　66　(0)　379-379　2011
Publisher: The Physical Society of Japan
ISSN： 1342-8349
23pRA-4 Temperature dependence of current-induced domain wall motion in perpendicularly magnetized Co/Ni nanowires

Ueda K, Ono T, Koyama T, Chiba D, Fukami S, Tanigawa H, Suzuki T, Oshima N, Ishiwata N, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　66　(0)　450-450　2011
Publisher: The Physical Society of Japan
ISSN： 1342-8349
23pRA-5 Effect of external magnetic field on threshold current density for current-induced domain wall displacement II

Koyama T, Ono T, Ueda K, Chiba D, Fukami S, Tanigawa H, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　66　(0)　450-450　2011
Publisher: The Physical Society of Japan
ISSN： 1342-8349
28aHF-9 Observation of current-induced magnetic domain wall displacement in Co/Ni wire using SPELEEM

Koyama T, Ishiwata N, Kinoshita T, Ono T, Ohshima N, Chiba D, Kotsugi M, Ohkouchi T, Tanigawa H, Fukami S, Nagahara Y, Suzuki T

Meeting Abstracts of the Physical Society of Japan　66　(0)　516-516　2011
Publisher: The Physical Society of Japan
ISSN： 1342-8349
スピン移行トルク磁壁移動を用いた高速磁気ランダムアクセスメモリ

三浦貞彦, 深見俊輔, 鈴木哲広, 永原聖万, 大嶋則和, 加藤有光, 斉藤信作, 根橋竜介, 崎村昇, 本庄弘明, 森馨, 谷川博信, 石綿延行, 杉林直彦

半導体・集積回路技術シンポジウム講演論文集　74th　89-92　2010/07/08
Publisher: 電気化学会電子材料委員会
Current-induced magnetic domain wall motion and its application to high-speed MRAM Invited

ISHIWATA N., FUKAMI S., SUZUKI T., OHSHIMA N., NAGAHARA K., MIURA S., SUGIBAYASHI T.

Magnetics Japan　5　(4)　178-183　2010/04
Publisher: 日本磁気学会
ISSN： 1880-7208
20pGJ-2 Direct observation of field-driven domain wall propagation in Co/Ni wire

Yamada K, Kobayashi K, Ono T, Jamet J. P, Ferre J, Thiaville A, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Chiba D

Meeting Abstracts of the Physical Society of Japan　65　(0)　466-466　2010
Publisher: 一般社団法人日本物理学会
ISSN： 1342-8349
20aPS-28 Reduction of threshold current density for domain wall displacement by shape control of wire

Koyama T, Nakatani Y, Ono T, Ueda K, Yamada G, Chiba D, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N

Meeting Abstracts of the Physical Society of Japan　65　(0)　455-455　2010
Publisher: The Physical Society of Japan
ISSN： 1342-8349
20pGJ-3 Current-induced domain wall motion in Co/Ni nano-wires with different Co and Ni thickness

Ueda K, Nakatani Y, Ono T, Koyama T, Yamada G, Chiba D, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N

Meeting Abstracts of the Physical Society of Japan　65　(0)　466-466　2010
Publisher: The Physical Society of Japan
ISSN： 1342-8349
20pGJ-4 Current-induced motion of multi domain walls in a Co/Ni wire with perpendicular magnetic anisotropy II

Yamada G, Nakatani Y, Ono T, Koyama T, Ueda K, Chiba D, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N

Meeting Abstracts of the Physical Society of Japan　65　(0)　466-466　2010
Publisher: The Physical Society of Japan
ISSN： 1342-8349
24aWP-5 Effect of external magnetic field on threshold current density for current-induced domain wall displacement

Koyama T, Ono T, Ueda K, Chiba D, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　65　(0)　377-377　2010
Publisher: The Physical Society of Japan
ISSN： 1342-8349
25aPS-34 Domain Wall Oscillator

Kondou K, Nakatani Y, Chiba D, Fukami S, Ishiwata N, Ono T

Meeting Abstracts of the Physical Society of Japan　65　(0)　406-406　2010
Publisher: The Physical Society of Japan
ISSN： 1342-8349
25aPS-43 Temperature dependence of current-induced domain wall (DW) motion in Co/Ni nano-wires

Ueda K, Ono T, Koyama T, Chiba D, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　65　(0)　408-408　2010
Publisher: The Physical Society of Japan
ISSN： 1342-8349
SoC混載に適した垂直磁化磁壁移動型MRAM

石綿延行, 深見俊輔, 鈴木哲広, 永原聖万, 大嶋則和, 尾崎康亮, 齊藤信作, 根橋竜介, 崎村昇, 本庄弘明, 森馨, 五十嵐忠二, 三浦貞彦, 杉林直彦

日本磁気学会研究会資料　168th　41-45　2009/11/02
Publisher: 日本磁気学会
ISSN： 1882-2940
垂直磁化磁壁移動セルを用いた高速低電流MRAM Invited

深見俊輔, 鈴木哲広, 永原聖万, 大嶋則和, 斉藤信作, 尾崎康亮, 根橋竜介, 崎村昇, 本庄弘明, 森馨, 五十嵐忠二, 三浦貞彦, 石綿延行, 杉林直彦

信学技報、IEICE Technical Report SDM2009-114, ICD2009-30　2009/07

ISSN： 0913-5685
MRAM technology trend and evolution, 32Mb MRAM development

杉林直彦, 根橋竜介, 崎村昇, 本庄弘明, 斉藤信作, 伊藤雄一, 三浦貞彦, 加藤有光, 森馨, 尾崎康亮, 小林洋介, 大嶋則和, 木下啓藏, 鈴木哲広, 永原聖万, 石綿延行, 末光克巳, 深見俊輔, 波田博光, 笠井直記

電子情報通信学会技術研究報告　109　(2(ICD2009 1-12))　13-17　2009/04/06
Publisher: 一般社団法人電子情報通信学会
ISSN： 0913-5685

More details Close

MRAM is the only nonvolatile memory with unlimited write endurance. We discuss the MRAM technology trend and applications in which the MRAM unique feature creates added value. We describe a prospect of MRAM technology evolution. We have been developing MRAMs using a 2T1MTJ cell because of its suitableness for embedded memories. We also describe a 32Mb MRAM, which is the latest development using the 2T1MTJ cell.
27pTF-2 Current-driven domain wall motion in Co/Ni wires with perpendicular magnetic anisotropy

Koyama T, Ono T, Tanigawa H, Yamada G, Ohshima N, Fukami S, Ishiwata N, Chiba D, Kasai S, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　64　(0)　451-451　2009
Publisher: The Physical Society of Japan
ISSN： 1342-8349
28aPS-108 Current-induced domain wall motion in Co/Ni wires with perpendicular magnetic anisotropy

Tanigawa H, Ono T, Koyama T, Yamada G, Chiba D, Kasai S, Ohshima N, Fukami S, Ishiwata N, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　64　(0)　482-482　2009
Publisher: The Physical Society of Japan
ISSN： 1342-8349
28aPS-112 Injection of a single domain wall into a Co/Ni wire with perpendicular magnetic anisotropy

Yamada G, Ono T, Koyama T, Tanigawa H, Ohshima N, Fukami S, Ishiwata N, Chiba D, Kasai S, Nakatani Y

Meeting Abstracts of the Physical Society of Japan　64　(0)　483-483　2009
Publisher: The Physical Society of Japan
ISSN： 1342-8349
25pPSA-27 Magnetic anisotropy constant of perpendicularly magnetized Co/Ni nano-wires

Ueda K, Nakatani Y, Ono T, Koyama T, Yamada G, Chiba D, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N

Meeting Abstracts of the Physical Society of Japan　64　(0)　344-344　2009
Publisher: The Physical Society of Japan
ISSN： 1342-8349
25pPSA-29 Current-induced motion of multi domain walls in a Co/Ni wire with perpendicular magnetic anisotropy

Yamada G, Nakatani Y, Ono T, Koyama T, Ueda K, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Chiba D

Meeting Abstracts of the Physical Society of Japan　64　(0)　344-344　2009
Publisher: The Physical Society of Japan
ISSN： 1342-8349
27aRA-5 Current-induced domain wall motion in Co/Ni wire in magnetic field

Koyama T, Nakatani Y, Ono T, Yamada G, Ueda K, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Chiba D

Meeting Abstracts of the Physical Society of Japan　64　(0)　369-369　2009
Publisher: The Physical Society of Japan
ISSN： 1342-8349
21pQG-8 Current-driven domain wall motion in ferromagnetic nano wires with perpendicular magnetic anisotropy

Koyama T, Tanigawa H, Kondou K, Ohshima N, Fukami S, Ishiwata N, Kasai S, Ono T

Meeting Abstracts of the Physical Society of Japan　63　(0)　380-380　2008
Publisher: The Physical Society of Japan
ISSN： 1342-8349
23aPS-20 Current-driven domain wall motion in ferromagnetic nano wires with perpendicular magnetic anisotropy

Koyama T, Tanigawa H, Kondou K, Ohshima N, Fukami S, Ishiwata N, Kasai S, Ono T

Meeting Abstracts of the Physical Society of Japan　63　(0)　429-429　2008
Publisher: The Physical Society of Japan
ISSN： 1342-8349
24aWL-10 Current-driven domain wall motion in CoCrPt wires with perpendicular magnetic anisotropy

Tanigawa H, Kondou K, Koyama T, Ohshima N, Fukami S, Ishiwata N, Kasai S, Ono T

Meeting Abstracts of the Physical Society of Japan　63　(0)　475-475　2008
Publisher: The Physical Society of Japan
ISSN： 1342-8349
A 4Mb MRAM and its experimental application

SUGIBAYASHI Tadahiko, HONDA Takeshi, SAKIMURA Noboru, NAGAHARA Kiyokazu, MIURA Sadahiko, SHIMURA Ken-ichi, TSUJI Kiyotaka, FUKUMOTO Yoshiyuki, HONJO Hiroaki, SUZUKI Tetsuhiro, KATO Yuko, SAITO Shinsaku, KASAI Naoki, NUMATA Hideaki, OSHIMA Norikazu, NEBASHI Ryusuke, SUEMITSU Katsumi, MUKAI Tomonori, MORI Kaoru, FUKAMI Shunsuke, ISHIWATA Nobuyuki, HADA Hiromitsu, TAHARA Shuichi

IEICE technical report　106　(2)　61-65　2006/04/06
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

More details Close

The memory-cell technology, circuit technology and fabrication results of a newly developed 4Mb MRAM and an application proposal for MRAM are reported. Its memory cell is "toggle" type. It is designed with 0.24um MRAM+0.18um CMOS process. Its area size is 2.24um^2. Sense amplifier and write current source circuitry is designed for burst modes and is easy to adjust their circuit characteristics by registers with fuses. The die size of 4Mb MRAM is 5mm×7.8mm. A demo system of a drive-recorder application proposal, in which an MRAM feature is effectively used, is fabricated.

Show all ︎Show first 5

Research Projects 17

Chimera Quasiparticles: Administrative Group

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Transformative Research Areas (A)

Institution: Tokyo Institute of Technology

2024/04/01 - 2029/03/31
キメラ準粒子のエレクトロニクス

深見俊輔, 湯浅裕美, 畑中大樹, 関真一郎, 飯浜賢志

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 学術変革領域研究(A)

Institution: 東北大学

2024/04 - 2029/03
コヒーレントスピンダイナミクスを用いた省エネ・創エネデバイス

深見俊輔

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 基盤研究(S)

Institution: 東北大学

2024/04 - 2029/03
Demonstrating “probabilistic supremacy” with creating foundation for large-scale, integrated, spintronic probabilistic computer

Shunsuke Fukami

2024/02 - 2029/03
スピントロニクス確率論的コンピュータの大規模化に向けた材料・素子・回路・アルゴリズム融合研究

深見俊輔

Offer Organization: 科学技術振興機構（JST）

System: 国際的な科学技術共同研究などの推進国際科学技術協力基盤整備事業 AdCORP

Institution: 東北大学

2023 - 2027

More details Close

本研究は、スピントロニクス確率論的コンピュータの大規模化に向けて求められる材料・素子・回路・アルゴリズムに関する基盤的理解・技術を構築することを目的とする。日米の研究チームの緊密な連携の下、日本側チームは主に材料・素子研究を、相手側チームは主に回路・アルゴリズム研究を推進し、また両者で協力してデモ実証を行う。両国チームによる研究を通して、低炭素社会の実現に資する革新的情報技術の新基盤が構築されることが期待される。
Theoretical and experimental research on spin-orbit emergent inductance Competitive

Yuta Yamane, Shun Kanai, Shunsuke Fukami

Offer Organization: Japan Society for the Promotion of Science

2023/04 - 2026/03
Fundamentals and developments of brainmorphic computing hardware

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tohoku University

2020/04/01 - 2025/03/31
Exploring topological and quantum effects in ferromagnetic Weyl semimetals for spintronic devices

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for JSPS Fellows

Institution: Tohoku University

2023/03/08 - 2024/03/31
Exploring topological and quantum effects in ferromagnetic Weyl semimetals for spintronic devices

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for JSPS Fellows

Category: Grant-in-Aid for JSPS Fellows

Institution: Tohoku University

2022/07/27 - 2024/03/31
強磁性ワイル半金属のトポロジカルおよび量子効果の開拓とスピントロニクス素子応用

深見俊輔, HAN JIAHAO

Offer Organization: 日本学術振興会

System: 科学研究費助成事業特別研究員奨励費

Category: 特別研究員奨励費

Institution: 東北大学

2022/04/22 - 2024/03/31
Non-Collinear Spintronics

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S)

Category: Grant-in-Aid for Scientific Research (S)

Institution: Tohoku University

2019/06/26 - 2024/03/31
ストレッチャブルスピンデバイス実現を目指した超瞬間熱処理プロセス構築への挑戦

千葉大地, 深見俊輔

Offer Organization: 日本学術振興会

System: 科学研究費助成事業挑戦的研究(萌芽)

Category: 挑戦的研究(萌芽)

Institution: 大阪大学

2021/07/09 - 2023/03/31

More details Close

今年度研究開始当初に、この研究の要となるフラッシュランプアニール装置が故障した。海外のメーカー製であり、コロナ禍のため技術者が来日できず、対応に苦慮した。来年度(2022年度)初めに再起動の目途が立ったが、今年度は既存試料の詳細な解析に注力することとした。そこで今年度は、磁気トンネル接合(MTJ)の、熱処理前後の既存試料の微細組織構造や元素分布、アニール過程の観察を、大阪大学超高圧電子顕微鏡センター(阪大電顕センター)にて行うための技術習得と、データどりを急ぐこととした。また、観測用磁気トンネル接合の試料作製や、通常の熱処理炉での条件出しなどを行った。阪大電顕センターにて、元素分布、つまり特定の元素の拡散の様子の違いを確認できる準備を整えた。具体的には、試料準備の方法、装置の使用方法などを習得する作業を行った。その後、通常の熱処理炉で450℃でアニールを行った試料と、フラッシュランプアニール装置を用いていくつかのコンディションで瞬間アニールした既存試料の、双方の透過型電子顕微鏡像、エネルギー分散型蛍光X線分析(EDX)ラインプロファイルを観察し、結晶化の様子や、元素部分布の違いを観察した。CoFeB/MgO系MTJのBの拡散の様子、下地層やキャップ層元素の拡散の様子などを観察したところ、通常の熱処理炉でアニールした試料では、B(ボロン)が下地層に多く含まれていることなど、特徴的な様子を観測することができた。今年度終盤にはフラッシュランプアニール装置でアニールした試料の観測も行うことができたが、EDXの計測については来年度以降に持ち越しとなった。
Spintronics-Based Hardware Paradigm for Artificial Intelligence

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Specially Promoted Research

Category: Grant-in-Aid for Specially Promoted Research

Institution: Tohoku University

2017/04/25 - 2022/03/31
Non-Collinear Spintronics

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)

Category: Grant-in-Aid for Scientific Research (A)

Institution: Tohoku University

2019/04/01 - 2020/03/31
反強磁性ヘテロ構造におけるスピン軌道トルク磁化反転の空間・元素・時間分解観察

深見俊輔, KURENKOV ALEKSANDR, DUTTAGUPTA SAMIK, LLANDRO Justin

Offer Organization: 日本学術振興会

System: 科学研究費助成事業国際共同研究加速基金(国際共同研究強化(B))

Category: 国際共同研究加速基金(国際共同研究強化(B))

Institution: 東北大学

2018/10/09 - 2020/03/31

More details Close

本研究課題は2018年10月に採択されて研究を開始し、当初は2021年3月に完了予定であったが、研究代表者が申請していた別の研究課題が2019年6月に基盤研究(S)で採択されたことを受け、廃止することとなった。約9か月の研究期間内において、2018年11月には英国に渡航し、放射光施設Diamond Light Sourceにおいて、共同研究相手であるスイス連邦工科大学のPietro Gambardella教授のグループと共同でX線磁気円二色性および磁気線二色性を用いた顕微鏡観察の実験を行った。研究代表者の深見および分担者のKurenkov、同じく分担者のDuttaGuptaの作製した磁性ヘテロ積層膜からなる微細素子の反強磁性層のネールベクトルおよび強磁性層の磁化の電流に対する応答を観察し、これまでに電気的な測定で得られていた結果の理解につながる有用な知見が得られた。その後、得られた結果を画像処理などから解析するとともにマイクロマグネティックシミュレーションなどを行い、反強磁性／強磁性ヘテロ構造、及び反強磁性／非磁性ヘテロ構造においてスピン軌道トルクによって誘起されるドメインのダイナミクスに関する統一的な理解が得られた。
Novel magnetic domain wall motion scheme in ultra-narrow planar wire and its evolution to three-dimensional device

Fukami Shunsuke

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (A)

Category: Grant-in-Aid for Young Scientists (A)

Institution: Tohoku University

2015/04/01 - 2018/03/31

More details Close

This research aimed at realizing current-induced magnetic domain wall motion in ultra-narrow nanowires and three-dimensional pillar-shaped devices. First, the physical limit of miniaturization for the case of perpendicular-easy-axis wire was experimentally clarified to be around 20 nm and the underlying physics was revealed by micromagnetic simulation. Then, the research was shifted to the in-plane-easy-axis magnetic wire and a domain wall motion was demonstrated in wire with the width of 13 nm by applying a new concept. Finally, the pillar devices with the diameter of less than 10 nm and the thickness of 15 nm were fabricated and magnetization switching was experimentally investigated. The experimental results were well described by analytical model, and numerical simulation suggests the possibility of three-dimensional device when one design the thickness to be more than 30 nm. A large portion of the original objectives of this research were achieved.
Study on a new spin-orbit torque induced magnetization switching scheme and its application to three-terminal memory devices

Fukami Shunsuke

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research

Category: Grant-in-Aid for Challenging Exploratory Research

Institution: Tohoku University

2015/04/01 - 2017/03/31

More details Close

A new magnetization switching scheme, which is expected to be applied to high-performance and ultralow-power integrated circuits, was proposed. Also, demonstration of its basic operation, elucidation of its physical mechanism, and establishment of technological basics for integrated-circuits applications have been addressed. This work has shown a new magnetization switching scheme utilizing spin-orbit interaction, so-called spin-orbit torque induced magnetization switching, and have clarified the factors governing the threshold current density and nano-second dynamics. The sub-ns, field-free magnetization switching has also been demonstrated. Through these researches, fundamental and technological basics of spin-orbit torque switching for the application to integrated circuits have been established.

Show all Show first 5

Other 2

極微細世代における新規磁壁移動方式の研究と3次元デバイスへの展開

More details Close

本研究では極微細世代（30nm以下）での電流誘起磁壁移動を実現する新方式を提案し、微細ナノ磁性体の新たな物理を開拓する。またそこで確立した知見をもとに3次元磁壁移動デバイスの世界初の動作実証へと発展させる。
スピン軌道トルクを用いた新規磁化制御方式の研究と3端子磁気メモリ素子への応用

More details Close

本研究では、スピン軌道相互作用に由来するトルク―スピン軌道トルク―を用いた新しい磁化制御方式の基礎物理を確立し、それを用いた３端子磁気メモリ素子の実用化のための基盤技術を構築する。