Details of the Researcher

PHOTO

Shuang Yi
Section
Graduate School of Engineering
Job title
Assistant Professor
Degree

  • 博士（工学）（東北大学）

  • 修士（工学）（東北大学）

e-Rad No.
10962144

Research History 5

  • 2024/10 - Present
    Tohoku University　Graduate School of Engineering Department of Materials Science　Assistant Professor

  • 2024/10 - Present
    Tohoku University　高等研究機構 新領域創成部

  • 2024/10 - Present
    JST 創発研究者

  • 2021/10 - Present
    Tohoku University　Advanced Institute for Materials Research　Assistant Professor

  • 2019/04 - 2021/09
    Japan Society for the Promotion of Science　JSPS DC1

Education 2

  • Tohoku University　Graduate School of Engineering　Department of Materials Science, PhD

    2018/10 - 2021/09

  • Tohoku University　Graduate School of Engineering　Department of Materials Science, Master Course

    2016/10 - 2018/09

Professional Memberships 2

  • 日本金属学会

  • 応用物理学会

Research Interests 5

  • Nitride thin film

  • Chalcogenide thin film

  • Selector material

  • Phase change memory

  • Non-volatile memory

Research Areas 1

  • Nanotechnology/Materials / Inorganic materials /

Awards 10

  1. 第38回安藤博記念学術奨励賞

    2025/06　一般財団法人安藤研究所

  2. 第35回トーキン財団奨励賞

    2025/03　公益財団法人トーキン科学技術振興財団

  3. Best Poster Award

    2024/11　The 8th Symposium for the Core Research Clusters for Materials Science and Spintronics　Phase-change chromium nitride for next-generation nonvolatile memory

  4. 第64回原田研究奨励賞

    2024/05

  5. 第29回青葉工学研究奨励賞

    2023/12　一般財団法人青葉工学振興会

  6. 第52回応用物理学会講演奨励賞

    2022/05　応用物理学会

  7. Fujino Award

    2021/09　Tohoku University

  8. Poster Award

    2024/11　PCOS相変化研究会　Investigation of the Phase-change Behaviors of Cr-Te Thin Films

  9. Poster Award

    2024/11　PCOS相変化研究会　Feasibility Study of V-Te Thin Film as a Phase-Change Material

  10. 第43回優秀ポスター賞受賞者

    2024/09　日本金属学会　Cr-Te薄膜の結晶多形変化挙動

Show all ︎Show 5

Papers 35

  1. Phase Engineering of a 1D van der Waals Thin Film

    Yi Shuang, Daisuke Ando, Yuji Sutou

    Advanced Functional Materials　2025/03/20

    DOI： 10.1002/adfm.202503094 　

  2. Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe<inf>5</inf>

    Yi Shuang, Yuta Saito, Shogo Hatayama, Paul Fons, Ando Daisuke, Yuji Sutou

    Journal of Materials Science and Technology　210　246-253　2025/03/01

    DOI： 10.1016/j.jmst.2024.05.039 　

    ISSN： 1005-0302

  3. Polymorphic Phase‐Change Properties and Memory Characteristics of VTe Thin Film

    Shuhei Orihara, Yi Shuang, Daisuke Ando, Yuji Sutou

    physica status solidi (RRL) – Rapid Research Letters　2025/02/21

    DOI： 10.1002/pssr.202400430 　

  4. Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

    Yi Shuang, Shunsuke Mori, Takuya Yamamoto, Shogo Hatayama, Yuta Saito, Paul J. Fons, Yun-Heub Song, Jin-Pyo Hong, Daisuke Ando, Yuji Sutou

    ACS Nano　2024/08/01

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acsnano.4c03574 　

    ISSN： 1936-0851

    eISSN： 1936-086X

  5. Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

    Yi Shuang, Daisuke Ando, Yunheub Song, Yuji Sutou

    Applied Physics Letters　2024/02/05

    DOI： 10.1063/5.0190632 　

  6. NbTe<inf>4</inf> Phase-Change Material: Breaking the Phase-Change Temperature Balance in 2D Van der Waals Transition-Metal Binary Chalcogenide

    Yi Shuang, Qian Chen, Mihyeon Kim, Yinli Wang, Yuta Saito, Shogo Hatayama, Paul Fons, Daisuke Ando, Momoji Kubo, Yuji Sutou

    Advanced Materials　35　(39)　2023/09/27

    DOI： 10.1002/adma.202303646 　

    ISSN： 0935-9648

    eISSN： 1521-4095

  7. Effect of N dopants on the phase change characteristics of Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> film revealed by changes in optical properties

    Yi Shuang, Shogo Hatayama, Daisuke Ando, Yuji Sutou

    Applied Surface Science　601　2022/11/01

    DOI： 10.1016/j.apsusc.2022.154189 　

    ISSN： 0169-4332

  8. Evolution of the local structure surrounding nitrogen atoms upon the amorphous to crystalline phase transition in nitrogen-doped Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> phase-change material

    Yi Shuang, Shogo Hatayama, Yuta Saito, Paul Fons, Alexander V. Kolobov, Daisuke Ando, Yuji Sutou

    Applied Surface Science　556　2021/08/01

    DOI： 10.1016/j.apsusc.2021.149760 　

    ISSN： 0169-4332

  9. Nitrogen doping-induced local structure change in a Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf>inverse resistance phase-change material

    Yi Shuang, Shogo Hatayama, Hiroshi Tanimura, Daisuke Ando, Tetsu Ichitsubo, Yuji Sutou

    Materials Advances　1　(7)　2426-2432　2020

    DOI： 10.1039/d0ma00554a 　

    eISSN： 2633-5409

  10. Contact resistance change memory using N-doped Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> phase-change material showing non-bulk resistance change

    Shuang, Y., Sutou, Y., Hatayama, S., Shindo, S., Song, Y.H., Ando, D., Koike, J.

    Applied Physics Letters　112　(18)　2018

    DOI： 10.1063/1.5029327 　

    ISSN： 0003-6951

  11. Room temperature ferromagnetism in polymorphic (Cr,Mn)Te films

    Mihyeon Kim, Ryoga Nakajima, Takashi Harumoto, Yi Shuang, Daisuke Ando, Nobuki Tezuka, Yuta Saito, Yuji Sutou

    APL Materials　2025/06/01

    DOI： 10.1063/5.0266675 　

  12. Melting‐Free Crystalline Polymorphic Transition in CrTe Thin Films: Potential for Phase‐Change Random Access Memory Applications

    Takuya Tsuruta, Yi Shuang, Daisuke Ando, Yuji Sutou

    physica status solidi (RRL) – Rapid Research Letters　2025/04/03

    Publisher: Wiley

    DOI： 10.1002/pssr.202500018 　

    ISSN： 1862-6254

    eISSN： 1862-6270

    More details Close

    The phase‐change potential of an as‐deposited chromium telluride (CrTe) thin film is investigated by focusing on its crystalline‐to‐crystalline polymorphic transition. Transmission electron microscopy determined that the as‐deposited CrTe thin film exhibits a hexagonal crystal structure that changes to a monoclinic crystal structure upon annealing at 500 °C. This alteration of the crystal structure is accompanied by a large change in carrier concentration of around two magnitudes and a very small corresponding change in resistivity. The memory switching of a fabricated phase‐change memory device utilizing a CrTe thin film active layer demonstrates a pronounced resistance disparity between SET and RESET states compared to the resistance change upon phase change in the thin‐film case. This disparity is attributed to variations in the contact resistivity of the memory device, which are driven by changes in the carrier concentration upon the crystalline polymorphic transition. Electrical pulse measurements confirm that the resistance change is reversible and repeatable, highlighting the material's potential for phase‐change random access memory applications.

  13. Unveiling the Significant Role of Schottky Interfaces for Threshold Voltage in Ovonic Threshold Switching

    Shogo Hatayama, Keisuke Hamano, Yi Shuang, Mihyeon Kim, Paul Fons, Yuta Saito

    ACS Applied Electronic Materials　2025/03/11

    DOI： 10.1021/acsaelm.5c00292 　

  14. Interfacial reaction behavior between ferromagnetic CoFeB and the topological insulator Sb<inf>2</inf>Te<inf>3</inf>

    Misako Morota, Shogo Hatayama, Yi Shuang, Shunsuke Mori, Yuji Sutou, Paul Fons, Yuta Saito

    Surfaces and Interfaces　51　2024/08

    DOI： 10.1016/j.surfin.2024.104486 　

    ISSN： 2468-0230

  15. Research Trends in Phase-change Materials and Their Application to Neuromorphic Devices Invited Peer-reviewed

    Yi SHUANG, Shin-young KANG Yuji SUTOU

    The Journal of Institute of Electronics, Information and Communication Engineering　107　(4)　334-339　2024/04

  16. Nonvolatile Isomorphic Valence Transition in SmTe Films

    Shogo Hatayama, Shunsuke Mori, Yuta Saito, Paul J. Fons, Yi Shuang, Yuji Sutou

    ACS Nano　18　(4)　2972-2981　2024/01/16

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acsnano.3c07960 　

    ISSN： 1936-0851

    eISSN： 1936-086X

  17. An amorphous Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf>/polyimide double-layer foil with an extraordinarily outstanding strain sensing ability

    Yinli Wang, Yi Shuang, Mihyeon Kim, Daisuke Ando, Fumio Narita, Yuji Sutou

    Materials Horizons　2024

    DOI： 10.1039/d4mh00616j 　

    ISSN： 2051-6347

    eISSN： 2051-6355

  18. Conduction Mechanism in Amorphous NbTe&lt;sub&gt;4&lt;/sub&gt; Thin Film

    Yi Shuang, Daisuke Ando, Yuji Sutou

    MATERIALS TRANSACTIONS　2024

    Publisher: Japan Institute of Metals

    DOI： 10.2320/matertrans.mt-m2024062 　

    ISSN： 1345-9678

    eISSN： 1347-5320

  19. Thermally-induced nanoscale phase change in chalcogenide glass Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> revealed by scanning tunneling microscopy

    D. I. Kim, Mizuki Kawaji, Hiroki Sato, Ryota Kawamura, Ryo Tamaki, Satoshi Kusaba, Yinli Wang, Yi Shuang, Yuji Sutou, Ikufumi Katayama, Jun Takeda

    Japanese Journal of Applied Physics　63　(1)　2024/01/01

    DOI： 10.35848/1347-4065/ad13a7 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  20. Origins of midgap states in Te-based Ovonic threshold switch materials

    Shogo Hatayama, Yuta Saito, Paul Fons, Yi Shuang, Mihyeon Kim, Yuji Sutou

    Acta Materialia　258　2023/10/01

    DOI： 10.1016/j.actamat.2023.119209 　

    ISSN： 1359-6454

  21. Soret-effect induced phase-change in chromium nitride semiconductor film

    Yi Shuang, Shunsuke Mori, Takuya Yamamoto, Shogo Hatayama, Yun-Heub Song, JinPyo Hong, Daisuke Ando, Yuji Sutou

    2023/02/01

    Publisher: Research Square Platform LLC

    DOI： 10.21203/rs.3.rs-2486043/v1 　

    More details Close

    Abstract Phase-change materials such as Ge-Sb-Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random access memories (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF ratio and large Joule heat energy for the RESET process (amorphization) significantly limit the storage density. This study proposes a novel phase-change nitride, CrN, with a much wider programming window (ON/OFF ratio more than 105) and lower RESET energy (a 90 % reduction from GST). High-resolution transmission electron microscopy revealed a unique phase-change from low resistive cubic CrN into high resistive hexagonal CrN2 induced by the Soret-effect. The proposed phase-change nitride could greatly expand the scope of conventional phase-change chalcogenides and offer a new strategy for next-generation PCRAM, enabling a large ON/OFF ratio, low energy, and fast operation.

  22. An isomorphic valency transition in SmTe film enabling nonvolatile resistive change

    Shogo Hatayama, Shunsuke Mori, Yuta Saito, Paul Fons, Yi Shuang, Yuji Sutou

    2022/11/30

    Publisher: Research Square Platform LLC

    DOI： 10.21203/rs.3.rs-2318820/v1 　

    More details Close

    Abstract A NaCl-type SmTe film showed remarkable electrical contrast (&gt; 105) between as-deposited and annealed films in the absence of a transition in the crystal structure. A rigid-band shift induced by a valency transition between Sm2+ and Sm3+ was found to give rise to significant change in the electronic structure along with a concomitant resistivity change. Moreover, operation of a SmTe-based memory device was demonstrated by a standard measurement scheme with switching driven by electrical pulse-induced Joule heating. Since SmTe remains crystalline in both resistive states, resistance drift is suppressed offering improved readout reliability. Furthermore, the SmTe films were found to exhibit much better data retention, maintaining data for 10 years at 262 °C in contrast to conventional nonvolatile recording material such as Ge-Sb-Te (85-110 °C). The use of a valency transition reveals a new approach to the development of nonvolatile high performance resistive change materials.

  23. Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

    Shogo Hatayama, Yuta Saito, Kotaro Makino, Noriyuki Uchida, Yi Shuang, Shunsuke Mori, Yuji Sutou, Milos Krbal, Paul Fons

    Journal of Materials Chemistry C　10　(29)　10627-10635　2022

    Publisher: Royal Society of Chemistry (RSC)

    DOI： 10.1039/d2tc01281b 　

    ISSN： 2050-7526

    eISSN： 2050-7534

  24. Electrical Conduction Mechanism of β-MnTe Thin Film with Wurtzite-Type Structure Using Radiofrequency Magnetron Sputtering

    Mihyeon Kim, Shunsuke Mori, Yi Shuang, Shogo Hatayama, Daisuke Ando, Yuji Sutou

    Physica Status Solidi - Rapid Research Letters　16　(9)　2022

    DOI： 10.1002/pssr.202100641 　

    ISSN： 1862-6254

    eISSN： 1862-6270

  25. Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material

    Yuta Saito, Shogo Hatayama, Yi Shuang, Paul Fons, Alexander V. Kolobov, Yuji Sutou

    Scientific Reports　11　(1)　2021/12

    DOI： 10.1038/s41598-020-80301-5 　

    eISSN： 2045-2322

  26. Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS<inf>2</inf>: Implications for 2D Electronic Devices

    Milos Krbal, Vit Prokop, Alexey A. Kononov, Jhonatan Rodriguez Pereira, Jan Mistrik, Alexander V. Kolobov, Paul J. Fons, Yuta Saito, Shogo Hatayama, Yi Shuang, Yuji Sutou, Stepan A. Rozhkov, Jens R. Stellhorn, Shinjiro Hayakawa, Igor Pis, Federica Bondino

    ACS Applied Nano Materials　4　(9)　8834-8844　2021/09/24

    DOI： 10.1021/acsanm.1c01504 　

    eISSN： 2574-0970

  27. Understanding the low resistivity of the amorphous phase of Cr2Ge2Te6 phase-change material: Experimental evidence for the key role of Cr clusters

    Shogo Hatayama, Keisuke Kobayashi, Yuta Saito, Paul Fons, Yi Shuang, Shunsuke Mori, Alexander V. Kolobov, Yuji Sutou

    Physical Review Materials　5　(8)　2021/08

    DOI： 10.1103/PhysRevMaterials.5.085601 　

    eISSN： 2475-9953

  28. Temperature-Dependent Electronic Transport in Non-Bulk-Resistance-Variation Nitrogen-Doped Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> Phase-Change Material

    Yi Shuang, Shogo Hatayama, Daisuke Ando, Yuji Sutou

    Physica Status Solidi - Rapid Research Letters　15　(3)　2021/03

    DOI： 10.1002/pssr.202000415 　

    ISSN： 1862-6254

    eISSN： 1862-6270

  29. The importance of contacts in Cu<inf>2</inf>GeTe<inf>3</inf>phase change memory devices

    Satoshi Shindo, Yi Shuang, Shogo Hatayama, Yuta Saito, Paul Fons, Alexander V. Kolobov, Keisuke Kobayashi

    Journal of Applied Physics　128　(16)　2020/10/28

    DOI： 10.1063/5.0019269 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  30. Reversible displacive transformation in MnTe polymorphic semiconductor

    Mori, S., Hatayama, S., Shuang, Y., Ando, D., Sutou, Y.

    Nature Communications　11　(1)　2020

    DOI： 10.1038/s41467-019-13747-5 　

    eISSN： 2041-1723

  31. Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications

    Saito, Y., Hatayama, S., Shuang, Y., Shindo, S., Fons, P., Kolobov, A.V., Kobayashi, K., Sutou, Y.

    Applied Physics Express　12　(5)　2019

    DOI： 10.7567/1882-0786/ab1301 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  32. Cr-Triggered Local Structural Change in Cr<inf>2</inf>Ge<inf>2</inf>Te<inf>6</inf> Phase Change Material

    Hatayama, S., Shuang, Y., Fons, P., Saito, Y., Kolobov, A.V., Kobayashi, K., Shindo, S., Ando, D., Sutou, Y.

    ACS Applied Materials and Interfaces　11　(46)　43320-43329　2019

    DOI： 10.1021/acsami.9b11535 　

    ISSN： 1944-8244

    eISSN： 1944-8252

  33. Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

    Shuang, Y., Hatayama, S., An, J., Hong, J., Ando, D., Song, Y., Sutou, Y.

    Scientific Reports　9　(1)　2019

    DOI： 10.1038/s41598-019-56768-2 　

    eISSN： 2045-2322

  34. MoS2/MnO2 heterostructured nanodevices for electrochemical energy storage

    YI SHUANG

    Nano Research　11　(4)　2083-2092　2018/04

    DOI： 10.1007/s12274-017-1826-6 　

    ISSN： 1998-0124 1998-0000

    eISSN： 1998-0000

  35. Water-Lubricated Intercalation in V2 O5 ·nH2 O for High-Capacity and High-Rate Aqueous Rechargeable Zinc Batteries

    YI SHUANG

    Advanced Materials　30　(1)　2018/01

    DOI： 10.1002/adma.201703725 　

    ISSN： 0935-9648

    eISSN： 1521-4095

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Misc. 3

  1. Understanding local structure of Cr2Ge2Te6 phase change material for non-volatile memory application

    畑山祥吾, YI Shuang, FONS Paul, FONS Paul, 齊藤雄太, KOLOBOV Alexander V., KOLOBOV Alexander V., 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　67th　2020

  2. 不揮発性相変化メモリ用遷移金属カルコゲナイド相変化材料の開発

    齊藤雄太, 畑山祥吾, YI Shuang, 進藤怜史, FONS Paul, KOLOBOV Alexander V., 小林啓介, 小林啓介, 小林啓介, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　2019

    ISSN： 2758-4704

  3. PN Junction Based Self-selective Property in N-doped Cr2Ge2Te6 Phase Change Memory

    双逸, 畑山祥吾, AN Jun-Seop, 安藤大輔, SONG Yun-Heub, 須藤祐司

    日本金属学会講演大会(Web)　165th　2019

Presentations 80

  1. Melting-free Nitride Phase- Change Memory: A Path Towards Low Energy Consumption Invited

    Yi Shuang

    The 83rd Device Research Conference, IEEE　2025/06/23

  2. 1D van der Waals Thin Films: Phase Engineering and Application Potential in Phase Change Memory Invited

    Yi Shuang

    China-Europe Symposium on Memory Technologies and The Chua Memristor Institute Conference　2025/06/10

  3. Amorphous-to-Crystalline Phase Transition Behavior a Quasi- One Dimensional Van Der Waals Material Invited

    Yi Shuang

    TMS(The Minerals, Metals & Materials Society) 154th Annual Meeting　2025/03/24

  4. Two-Step Thin Film Growth of Quasi-One-Dimensional Penta-Telluride ZrTe5 Realized by an Amorphous-to-Crystalline Transition

    Yi Shuang, Yuta Saito, Shogo Hatayama, Paul Fons, Ando Daisuke, Yuji Sutou

    2024/12/03

  5. Innovative Phase Change Materials for PCRAM Application Targeting Low Thermal Power Consumption Invited

    Yi Shuang, Yuji Sutou

    PCOS2024　2024/11/29

  6. Boosting Phase Change Memory Performance with Low-Melting 2D Transition Metal Tellurides Invited

    Yi Shuang, Yuji Sutou

    E/PCOS2024　2024/09/24

  7. Enhancing Performance of Phase Change Memory Using Low-Melting 2D Transition Metal Tellurides

    Shuang Yi

    15th Recent Progress in Graphene and 2D Materials Research Conference　2024/07/17

  8. A Novel 2D van der Waals Phase-Change Material Based on Transition-metal Binary Chalcogenide NbTe4 Invited

    YI SHUANG

    TMS(The Minerals, Metals & Materials Society) 153rd Annual Meeting　2024/03/05

  9. New Operating Principle: Contact Resistance Change Memory Invited

    Yi Shuang

    2022/09/21

  10. VCrN薄膜の相変化挙動と電気特性

    張 惟喬, 双 逸, 安藤 大輔, 須藤 祐司

    2025年第72回応用物理学会春季学術講演会　2025/03/17

  11. 価数揺動現象の制御による不揮発性抵抗スイッチの実現

    畑山 祥吾, 森 竣祐, 齊藤 雄太, フォンス ポール, 双 逸, 須藤 祐司

    2025年第72回応用物理学会春季学術講演会　2025/03/17

  12. 溶融不要なCr-Te薄膜の不揮発性メモリ応用の調査

    鶴田 卓也, 双 逸, 安藤 大輔, 須藤 祐司

    2025年第72回応用物理学会春季学術講演会　2025/03/17

  13. V-Te薄膜の相変化に伴う物性変化

    折原 周平, 双 逸, 安藤 大輔, 須藤 祐司

    2025年第72回応用物理学会春季学術講演会　2025/03/17

  14. Cr-Mn-Te薄膜における磁気特性変化

    金 美賢, 中島 諒芽, 春本 高志, 双 逸, 安藤 大輔, 手束 展規, 齊藤 雄太, 須藤 祐司

    日本金属学会2025年春期(第176回)講演大会　2025/03/10

  15. VTe2スパッタリング薄膜の結晶化に伴う物性変化

    折原 周平, 双 逸, 安藤 大輔, 須藤 祐司

    日本金属学会2025年春期(第176回)講演大会　2025/03/10

  16. d- and f-Electron Type Chalcogenides Realizing Unique Resistive Change Behavior Invited

    Shogo Hatayama, Yuta Saito, Shunsuke Mori, Yi Shuang, Paul Fons, Yuji Sutou

    2024 MRS Fall Meeting & Exhibit　2024/12/03

  17. Effect of annealing on magnetic properties of CrMnTe thin films

    R. Nakajima, M. Kim, T. Harumoto, Y. Shuang, Y. Saito, Y. Sutou, J. Sh

    PCOS2024　2024/11/29

  18. Changes in magnetic property of Cr-incorporated MnTe film

    Mihyeon Kim, Ryoga Nakajima, Takashi Harumoto, Yi Shuang, Daisuke Ando, Nobuki Tezuka, Yuta Saito, Yuji Sutou

    PCOS2024　2024/11/28

  19. Valence Transition Material: A New Class of Material for Nonvolatile Recording Applications

    Shogo Hatayama, Shunsuke Mori, Yuta Saito, Paul Fons, Yi Shuang, Yuji Sutou

    PCOS2024　2024/11/28

  20. Investigation of V-doped CrN Thin Film as Phase-Change Material and Approach to Energy Saving

    Wei-Chiao Chang, Yi Shuang, Daisuke Ando, Yuji Sutou

    PCOS2024　2024/11/28

  21. Feasibility Study of V-Te Thin Film as a Phase-Change Material

    Shuhei Orihara, Yi Shuang, Daisuke Ando, Yuji Sutou

    PCOS2024　2024/11/28

  22. Investigation of the Phase-change Behaviors of Cr-Te Thin Films

    Takuya Tsuruta, Yi Shuang, Daisuke Ando, Yuji Sutou

    2024/11/28

  23. Phase-change chromium nitride for next-generation nonvolatile memory

    Yi Shuang

    The 8th Symposium for the Core Research Clusters for Materials Science and Spintronics　2024/11/19

  24. The physical properties of MnTe2 films prepared by RF magnetron sputtering method

    LI, SHIH-YUAN, Serina Ozawa, Yi Shuang, Daisuke Ando, Yuji Sutou

    E/PCOS2024　2024/09/23

  25. Local structural changes in Cr-Mn-Te polymorphic films

    Mihyeon Kim, Yi Shuang, Shogo Hatayama, Paul Fons, Daisuke Ando, Yuta Saito, Yuji Sutou

    E/PCOS2024　2024/09/23

  26. Investigation of the Phase Change Behavior Vanadium-Tellurium Thin Film

    折原周平, 双逸, 安藤大輔, 須藤祐司

    2024 JIMM Autumn Meeting　2024/09/18

  27. Investigation of the phase-change behaviors of Cr-Te thin films for Next Generation Memory

    鶴田卓也, 双逸, 安藤大輔, 須藤祐司

    2024 JIMM Autumn Meeting　2024/09/18

  28. Resistance change behavior during tensile test in amorphous CrTe 3 film/Polyimide substrate

    吉田 陸人, 王 吟麗, 双 逸, 安藤 大輔, 須藤 祐司

    2024 JIMM Autumn Meeting　2024/09/18

  29. Electrical property of VN thin film and its possibility as phase-change material

    張惟喬, 双逸, 安藤大輔, 須藤祐司

    2024 JIMM Autumn Meeting　2024/09/18

  30. The impact of Mn doping on the resistance and structure change behavior of RuTe 2

    LI, SHIH-YUAN, Yi Shuang, Daisuke Ando, Yuji Sutou

    2024 JIMM Autumn Meeting　2024/09/18

  31. Mo-N半導体薄膜の相変化挙動

    鳩岡 裕介, 双 逸, 安藤 大輔, 須藤 祐司

    The 85th JSAP Autumn Meeting 2024　2024/09/16

  32. Cr添加によるMnTe薄膜の磁気特性変化

    金 美賢, 双 逸, 中島 諒芽, 春本 高志, 安藤 大輔, 齊藤 雄太, 須藤 祐司

    The 85th JSAP Autumn Meeting 2024　2024/09/16

  33. α相のMnTe薄膜の光・熱物性評価

    桑原 正史, 金 美賢, 森 竣祐, 双 逸, 須藤 祐司, 河島 整, 津田 裕之

    The 85th JSAP Autumn Meeting 2024　2024/09/16

  34. Phase Change Memory Applications of Low-Melting 2D Van der Waals Transition-Metal Chalcogenide NbTe4

    Yi Shuang1 , Qian Chen1, 5, Mihyeon Kim2 , Yinli Wang2 , Yuta Saito2, 3, Shogo Hatayama3 , Paul Fons4 , Daisuke Ando2 , Momoji Kubo5 , Yuji Sutou1, 2

    The 85th JSAP Autumn Meeting 2024　2024/09/16

  35. Suppressed density-change of Cr-incorporated MnTe thin film for phase-change memory

    Mihyeon Kim, Yi Shuang, Daisuke Ando, Yuta Saito, Yuji Sutou

    SSDM2024 International Conference on Solid State Devices and Materials　2024/09/01

  36. 2D van der Waals NbTe4 phase change material: enabling ultralow thermal consumption

    Shuang Yi

    CIMTEC2024　2024/06/22

  37. Phase change behavior in sputter-deposited RuTe2 thin film

    李世元, 双逸, 安藤大輔, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2024

  38. NbTe4: A Promising 2D van der Waals Transition-metal Binary Chalcogenides for phase change memory

    YI SHUANG

    PCOS相変化研究会シンポジウム　2023/11/17

  39. Phase-change chromium nitride for data storage

    YI SHUANG

    E/PCOS2023　2023/09/18

  40. 酸素ドーパントによるCrN薄膜のP-N変換

    YI SHUANG

    日本金属学会2023年春期(第172回)講演大会　2023/03/08

  41. The electrical resistance change behaviors in MnTe2 film

    LI Shih Yuan, YI Shuang, 安藤大輔, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2023

  42. Piezoresistive effect of Cr2Ge2Te6 crystalline film during tensile test

    王吟麗, 双逸, 中嶋真優, 安藤大輔, 成田史生, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2023

  43. Cr-Mn-Te多形変化薄膜の不揮発性相変化メモリへの応用可能性

    金美賢, 双逸, 安藤大輔, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2023

  44. Electrical properties study of Si-doped GeTe

    姜信英, 金美賢, 逸双, 逸双, 安藤大輔, 須藤祐司

    日本金属学会講演大会(Web)　2023

  45. Effect of sputtering condition on constituent phase and electrical property of MnTe2 film

    李世元, 双逸, 安藤大輔, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2023

  46. P-N conversion of CrN films by oxygen incorporation and their thermoelectric properties

    Yi Shuang

    2022 MRS Fall Meeting & Exhibit　2022/11/28

  47. Contact Resistance Change Memory Based on New Operating Principle

    Yi Shuang

    2022/09/23

  48. Pulsed Laser Induced Phase Transition in N-incorporated Cr2Ge2Te6 Film

    Yi Shuang

    第69回応用物理学会春季学術講演会　2022/03/23

  49. Optical phase-change characteristics of N-incorporated Cr2Ge2Te6

    Yi Shuang

    2022年春期(第170回)講演大会講演　2022/03/16

  50. MnTe多形の相安定性に及ぼすCr添加の影響

    金美賢, 双逸, 安藤大輔, 須藤祐司, 須藤祐司

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　2022

  51. Cr2Ge2Te6薄膜のピエゾレジスティブ特性

    王吟麗, 双逸, 中嶋真優, 安藤大輔, 成田史生, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2022

  52. Cr-Mn-Te薄膜の多形変化挙動

    金美賢, 双逸, 安藤大輔, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2022

  53. MnTe薄膜におけるレーザー加熱による多形変化の顕微ラマン観察

    金美賢, 森竣祐, 双逸, 安藤大輔, 須藤祐司, 須藤祐司

    日本金属学会講演大会(Web)　2022

  54. Changes in Raman spectra during laser heating in polymorphic MnTe film

    金美賢, 森竣祐, 双逸, 安藤大輔, 須藤祐司, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　2022

  55. Nitrogen local geometry in Cr2Ge2Te6 phase change material upon phase transition

    Yi Shuang

    PCOS2021　2021/11/18

  56. Temperature-dependent electrical transport mechanism in N doped Cr2Ge2Te6 films

    Yi Shuang

    E/PCOS2021　2021/09/14

  57. ウルツ鉱型MnTe薄膜における電気伝導機構

    金美賢, 森竣祐, 双逸, 畑山祥吾, 安藤大輔, 須藤祐司

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　2021

  58. Crystallization of a layered chalcogenide with dimensional change of chemical bonding

    齊藤雄太, 畑山祥吾, 畑山祥吾, YI Shuang, FONS Paul, FONS Paul, KOLOBOV Alexander V., KOLOBOV Alexander V., 須藤祐司

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　2021

  59. Understanding the mechanism of lowering resistivity in transition metal included amorphous chalcogenide

    畑山祥吾, 畑山祥吾, 小林啓介, 小林啓介, 齊藤雄太, FONS Paul, FONS Paul, YI Shuang, 森竣祐, KOLOBOV Alexander V., KOLOBOV Alexander V., 須藤祐司

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　2021

  60. Enhancement of phase-change memory performance: Approach from the development of new phase-change materials

    須藤祐司, 畑山祥吾, 森竣祐, YI Shunag

    半導体・集積回路技術シンポジウム(CD-ROM)　2021

  61. Development of phase change materials enabling low-power and fast operation PCRAM

    須藤祐司, 畑山祥吾, 森竣祐, SHUANG Yi

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　2021

  62. 多形MnTe薄膜における電気伝導機構

    金美賢, 森竣祐, 双逸, 畑山祥吾, 安藤大輔, 須藤祐司

    日本金属学会講演大会(Web)　2021

  63. Conduction Mechanism in Nitrogen Doped Cr2Ge2Te6 Phase Change Material

    Yi Shuang

    PCOS2020　2020/11/19

  64. Phase change materials for PCRAM realizing low-energy operation

    Sutou Yuji, Hatayama Shogo, Shuang Yi, Mori Shunsuke

    JSAP Annual Meetings Extended Abstracts　2020/08/26

  65. Understanding local structure of Cr2Ge2Te6 phase change material for non-volatile memory application

    畑山祥吾, YI Shuang, FONS Paul, FONS Paul, 齊藤雄太, KOLOBOV Alexander V., KOLOBOV Alexander V., 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　2020

  66. 窒素添加したCr2Ge2Te6の相変化挙動および接触抵抗変化

    Yi Shuang

    日本材料科学会第26回材料科学若手研究者討論会　2019/12/06

  67. Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr2Ge2Te6 Phase Change Memory

    Yi Shuang

    第80回応用物理学会秋季学術講演会　2019/09/19

  68. PN Junction Based Self-selective Property in N-doped Cr2Ge2Te6 Phase Change Memory

    Yi Shuang

    日本金属学会第165回秋期講演大会　2019/09/13

  69. PN Diode Properties of N-type Oxide/p-type N-doped Cr2Ge2Te6 and Its Application for Self-selective PCRAM

    Yi Shuang

    E/PCOS2019　2019/09/10

  70. Raman Scattering study of N Doped Cr2Ge2Te6 Phase Change Material

    Yi Shuang

    The Future of Materials Engineering - Dramatic Innovation to the next 100 years　2019/06/24

  71. Raman Scattering study of Non-bulk Resistance Change N Doped Cr2Ge2Te6 Phase Change Material

    Yi Shuang

    2019 Joint Symposium on MSE for the 21st Century　2019/06/04

  72. Contact resistance change memory with N-doped Cr2Ge2Te6 phase change material

    Yi Shuang

    第66回応用物理学会春季学術講演会　2019/03/09

  73. Novel Phase Change Material and its application in PCRAM

    Yi Shuang

    3rd Japan-Taiwan International Engineering Forum (2019)　2019/02/28

  74. 不揮発性相変化メモリ用遷移金属カルコゲナイド相変化材料の開発

    齊藤雄太, 畑山祥吾, YI Shuang, 進藤怜史, FONS Paul, KOLOBOV Alexander V., 小林啓介, 小林啓介, 小林啓介, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　2019

  75. Phase Change Behavior of Non-bulk Resistance Change N-doped Cr2Ge2Te6 Phase Change Material

    Yi Shuang

    E/PCOS2018　2018/09/24

  76. Nitrogen-doped Cr-Ge-Te Films for Phase Change Random Access Memory

    Yi Shuang

    2018 Joint Symposium on MSE for the 21st Century　2018/06/25

  77. Nitrogen-doped Cr-Ge-Te Films for Phase Change Random Access Memory

    Yi Shuang

    MRS 2018　2018/04/03

  78. Electrical property of N-doped Cr-Ge-Te phase change material

    Yi Shuang

    2018 Russia-Japan Conference, Advanced Materials: Synthesis, Processing and Properties of Nanostructures　2018/03/22

  79. 不揮発性メモリ用遷移金属相変化材料の電子構造の解明

    齊藤雄太, 須藤祐司, FONS Paul, KOLOBOV Alexander V., 進藤怜史, 進藤怜史, 畑山祥吾, YI Shuang, KOZINA Xeniya, SKELTON Jonathan M., 小林啓介

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　2018

  80. Phase Change Behavior of N-doped Cr-Ge-Te Film

    Yi Shuang

    E/PCOS2017　2017/09/04

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Industrial Property Rights 2

  1. 不揮発性メモリ素子およびその製造方法

    須藤 祐司, イ シュアン, 畑山 祥吾

    Property Type: Patent

    Holder: 国立大学法人東北大学

  2. 抵抗変化材料、スイッチ素子用材料、スイッチ層、スイッチ素子及び記憶装置

    須藤 祐司, イ シュアン, 松下 佳雅, 佐藤 史雄

    Property Type: Patent

Research Projects 6

  1. 準一次元ｖｄＷ相変化材料とその電子デバイスへの展開 Competitive

    双 逸

    Offer Organization: 国立研究開発法人科学技術振興機構（JST）

    System: 創発的研究支援事業

    2024/10 - 2028/03

  2. 酸素誘起Cr空孔制御によるpnホモ接合CrNフレキシブル熱電デバイスの創成 Competitive

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業基盤研究(B)

    Category: 基盤研究(B)

    Institution: 東北大学

    2024/04 - 2027/03

  3. 超省エネルギー化を目指した次世代グリーン型窒化物相変化メモリの開発 Competitive

    双 逸

    Offer Organization: 国立研究開発法人新エネルギー・産業技術総合開発機構（NEDO）

    System: 官民による若手研究者発掘支援事業（若サポ）

    2024/10 - 2026/03

  4. 次世代高集積省エネルギー相変化メモリに向けた準一次元vdW構造型相変化材料の開拓 Competitive

    双 逸

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 挑戦的研究(萌芽)

    Institution: 東北大学

    2024/06 - 2026/03

  5. 窒化物の高速相変化現象とそのメモリデバイスへの展開

    双 逸

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業 研究活動スタート支援

    Category: 研究活動スタート支援

    Institution: 東北大学

    2022/08 - 2024/03

  6. 窒素ドープCr-Ge-Teの界面伝導制御と新規接触抵抗相変化メモリの創成

    双 逸

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業 特別研究員奨励費

    Category: 特別研究員奨励費

    Institution: 東北大学

    2019/04/25 - 2022/03/31

    More details Close

    本研究では、新規相変化材料：Cr2Ge2Te6 (CrGT)のアモルファス相の耐熱性を向上するため、CrGTの結晶化温度（Tx）に及ぼす窒素（N）ドープの影響について取り組んだ。NドープによるTxの上昇はGSTについてもその有効性が報告されており、期待通りNドープ型CrGT(NCrGT)は高いTxを実現する事が分かったが、室温でのアモルファス相と結晶相の間に膜(バルク)抵抗率ρの変化はほぼ存在しないことも分かった。しかし、NCrGT/金属電極間の接触抵抗率ρcを測定した結果、アモルファス相と結晶相には三桁の差が生じる事を見出した。このことは、例え、相変化に伴う抵抗率変化が無くても、相変化に伴って“電極界面伝導機構”に変化が生じればPCMとして利用できる事を示唆する。そこで本年度では、ラマン分光測定、硬X線光電子分光(HAXPES)法や広域X線吸収微細構造(EXAFS)法と第一原理計算を組み合わせて、NCrGTのバルク・界面伝導特性と相変化機構の解明を目指した。

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