Details of the Researcher

PHOTO

Koji Inoue
Section
Institute for Materials Research
Job title
Associate Professor
Degree
  • 博士(学術)(東京大学)

  • 修士(学術)(東京大学)

Committee Memberships 6

  • 陽電子科学会 会報編集委員

    2013/04 - Present

  • 陽電子科学会 会報編集委員

    2013/04 - Present

  • 日本金属学会「まてりあ」編集委員会 委員

    2011/04 - 2013/03

  • 日本金属学会「まてりあ」編集委員会 委員

    2011/04 - 2013/03

  • 日本物理学会領域10格子欠陥ナノ構造分科運営委員会 委員

    2009/10 - 2010/09

  • 日本物理学会領域10格子欠陥ナノ構造分科運営委員会 委員

    2009/10 - 2010/09

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Research Interests 3

  • 陽電子消滅

  • 3次元アトムプローブ

  • 格子欠陥

Research Areas 3

  • Nanotechnology/Materials / Structural and functional materials /

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

  • Natural sciences / Magnetism, superconductivity, and strongly correlated systems /

Awards 8

  1. 俵論文賞

    2021/09 多結晶フェライト鋼の静的ひずみ時効発現機構 (鉄と鋼, Vol.106, No.6, pp.391-401)

  2. Summit of Materials Science 2012 Short Presentation Award

    2012/11 Summit of Materials Science 2012

  3. 第1回日本陽電子科学会奨励賞

    2011/09 日本陽電子科学会

  4. 第2回応用物理学会シリコンテクノロジー分科会論文賞

    2011/03 応用物理学会 “Dopant distributions in n-MOSFET structure observed by atom probe tomography” Ultramicroscopy vol. 109, pp. 1479-1484 (2009)

  5. 日本鉄鋼協会俵論文賞

    2010/03/28 日本鉄鋼協会 陽電子ドット閉じ込めを利用したFe中Cuナノ析出物の寸法評価法の開発

  6. 平成21 年度MIRAI 賞優秀賞

    2010/03/10 半導体MIRAIプロジェクト アトムプローブを用いたSi-MOSFET の三次元不純物分布

  7. 第4回物理学会若手奨励賞

    2010/03 日本物理学会

  8. 第15回陽電子消滅国際会議ポスター賞

    2009/01 第15回陽電子消滅国際会議ポスター賞

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Papers 165

  1. Mechanistic origin of grain size and oxygen interstitial effects on strain-induced α" martensitic transformation in Ti-12Mo alloy

    Yan Chong, Tomohito Tsuru, Masatoshi Mitsuhara, Baoqi Guo, Reza Gholizadeh, Koji Inoue, Andrew Godfrey, Nobuhiro Tsuji

    COMMUNICATIONS MATERIALS 6 (1) 2025/03/20

    DOI: 10.1038/s43246-025-00777-4  

    eISSN: 2662-4443

  2. Fracture behavior and grain boundary cohesion of alumina scales formed on ion-irradiated FeCrAl-ODS alloy

    Hao Yu, Diancheng Geng, Yasuyuki Ogino, Naoko Oono-Hori, Koji Inoue, Sosuke Kondo, Ryuta Kasada, Shigeharu Ukai

    JOURNAL OF NUCLEAR MATERIALS 606 2025/02

    DOI: 10.1016/j.jnucmat.2025.155663  

    ISSN: 0022-3115

    eISSN: 1873-4820

  3. Oxide particles in oxide dispersion strengthened steel neutron-irradiated up to 158 dpa at Joyo Peer-reviewed

    T. Toyama, T. Tanno, Y. Yano, K. Inoue, Y. Nagai, T. Ohtsuka, T. Miyazawa, M. Mitsuhara, H. Nakashima, M. Ohnuma, T. Kaito

    Journal of Nuclear Materials 599 155252 2024/10

    DOI: 10.1016/j.jnucmat.2024.155252  

    ISSN: 0022-3115

  4. Multiscale observation of nano-oxide particles in oxide-dispersion-strengthened Cu alloys Peer-reviewed

    Toshiki Saito, Hao Yu, Zimo Gao, Koji Inoue, Sosuke Kondo, Ryuta Kasada, Yasuyoshi Nagai, Yojiro Oba, Kosuke Hiroi

    Journal of Alloys and Compounds 983 2024/05/05

    DOI: 10.1016/j.jallcom.2024.173852  

    ISSN: 0925-8388

    eISSN: 1873-4669

  5. Contribution of Y2O3/Hf co-doping to alumina scale growth on oxide dispersion strengthened Co-based superalloy

    Hao Yu, Ryuta Kasada, Koji Inoue, Sosuke Kondo, Yasuyuki Ogino, Shigeharu Ukai

    CORROSION SCIENCE 227 2024/02

    DOI: 10.1016/j.corsci.2023.111775  

    ISSN: 0010-938X

    eISSN: 1879-0496

  6. Direct observation of voids decorated with transmuted rhenium atoms in neutron-irradiated tungsten by correlative use of TEM and APT Peer-reviewed

    Koji Inoue, Taiki Yamashita, Shuhei Nogami, Akira Hasegawa, Takeshi Toyama, Yasuyoshi Nagai

    Materialia 32 2023/12

    DOI: 10.1016/j.mtla.2023.101963  

    eISSN: 2589-1529

  7. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes Peer-reviewed

    Ryo Kagawa, Zhe Cheng, Keisuke Kawamura, Yutaka Ohno, Chiharu Moriyama, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Koji Inoue, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

    Small 2023/11/14

    Publisher: Wiley

    DOI: 10.1002/smll.202305574  

    ISSN: 1613-6810

    eISSN: 1613-6829

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    Abstract Thermal management is critical in contemporary electronic systems, and integrating diamond with semiconductors offers the most promising solution to improve heat dissipation. However, developing a technique that can fully exploit the high thermal conductivity of diamond, withstand high‐temperature annealing processes, and enable mass production is a significant challenge. In this study, the successful transfer of AlGaN/GaN/3C‐SiC layers grown on Si to a large‐size diamond substrate is demonstrated, followed by the fabrication of GaN high electron mobility transistors (HEMTs) on the diamond. Notably, no exfoliation of 3C‐SiC/diamond bonding interfaces is observed even after annealing at 1100 °C, which is essential for high‐quality GaN crystal growth on the diamond. The thermal boundary conductance of the 3C‐SiC‐diamond interface reaches ≈55 MW m−2 K−1, which is efficient for device cooling. GaN HEMTs fabricated on the diamond substrate exhibit the highest maximum drain current and the lowest surface temperature compared to those on Si and SiC substrates. Furthermore, the device thermal resistance of GaN HEMTs on the diamond substrate is significantly reduced compared to those on SiC substrates. These results indicate that the GaN/3C‐SiC on diamond technique has the potential to revolutionize the development of power and radio‐frequency electronics with improved thermal management capabilities.

  8. Irradiation effects on binary tungsten alloys at elevated temperatures: Vacancy cluster formation, precipitation of alloying elements and irradiation hardening Peer-reviewed

    Jing Wang, Yuji Hatano, Takeshi Toyama, Tatsuya Hinoki, Kiyohiro Yabuuchi, Yi-fan Zhang, Bing Ma, Alexander V. Spitsyn, Nikolay P. Bobyr, Koji Inoue, Yasuyoshi Nagai

    Materials & Design 229 111899-111899 2023/05

    Publisher: Elsevier BV

    DOI: 10.1016/j.matdes.2023.111899  

    ISSN: 0264-1275

  9. Defect Analysis of Matrix Damage in Reactor Pressure Vessel Steel Using WB-STEM Invited Peer-reviewed

    Kenta Yoshida, Takeshi Toyama, Koji Inoue, Yasuyoshi Nagai, Masaki Shimodaira

    Materia Japan 62 (3) 154-158 2023/03/01

    Publisher: Japan Institute of Metals

    DOI: 10.2320/materia.62.154  

    ISSN: 1340-2625

    eISSN: 1884-5843

  10. Grain refinement in titanium prevents low temperature oxygen embrittlement Peer-reviewed

    Yan Chong, Reza Gholizadeh, Tomohito Tsuru, Ruopeng Zhang, Koji Inoue, Wenqiang Gao, Andy Godfrey, Masatoshi Mitsuhara, J. W. Morris, Andrew M. Minor, Nobuhiro Tsuji

    Nature Communications 14 (1) 2023/02/01

    Publisher: Springer Science and Business Media LLC

    DOI: 10.1038/s41467-023-36030-0  

    eISSN: 2041-1723

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    Abstract Interstitial oxygen embrittles titanium, particularly at cryogenic temperatures, which necessitates a stringent control of oxygen content in fabricating titanium and its alloys. Here, we propose a structural strategy, via grain refinement, to alleviate this problem. Compared to a coarse-grained counterpart that is extremely brittle at 77 K, the uniform elongation of an ultrafine-grained (UFG) microstructure (grain size ~ 2.0 µm) in Ti-0.3wt.%O is successfully increased by an order of magnitude, maintaining an ultrahigh yield strength inherent to the UFG microstructure. This unique strength-ductility synergy in UFG Ti-0.3wt.%O is achieved via the combined effects of diluted grain boundary segregation of oxygen that helps to improve the grain boundary cohesive energy and enhanced <c + a> dislocation activities that contribute to the excellent strain hardening ability. The present strategy will not only boost the potential applications of high strength Ti-O alloys at low temperatures, but can also be applied to other alloy systems, where interstitial solution hardening results into an undesirable loss of ductility.

  11. Ultrahigh yield strength and large uniform elongation achieved in ultrafine-grained titanium containing nitrogen Peer-reviewed

    Yan Chong, Tomohito Tsuru, Baoqi Guo, Reza Gholizadeh, Koji Inoue, Nobuhiro Tsuji

    Acta Materialia 240 2022/11

    DOI: 10.1016/j.actamat.2022.118356  

    ISSN: 1359-6454

  12. Investigation of Nanoscale Phase Formation in Rapidly Solidified Fe<sub>20</sub>Co<sub>20</sub>Ni<sub>20</sub>Cr<sub>20</sub>B<sub>20−</sub><i><sub>x</sub></i>Si<i><sub>x</sub></i> Alloys Peer-reviewed

    Yicheng Zhang, Koji Inoue, Manabu Ishimaru, Tatsuya Tokunaga, Hidenori Era

    MATERIALS TRANSACTIONS 63 (9) 1211-1216 2022/09/01

    Publisher: Japan Institute of Metals

    DOI: 10.2320/matertrans.mt-m2022058  

    ISSN: 1345-9678

    eISSN: 1347-5320

  13. Effect of rhenium addition on deuterium retention in neutron-irradiated tungsten

    Y. Nobuta, T. Toyama, A. Matsumoto, M. Shimada, Y. Oya, K. Inoue, Y. Nagai, Y. Hatano

    Journal of Nuclear Materials 566 2022/08/01

    DOI: 10.1016/j.jnucmat.2022.153774  

    ISSN: 0022-3115

  14. In situ thermal annealing transmission electron microscopy of irradiation induced Fe nanoparticle precipitation in Fe-Si alloy

    Y. Shimada, Y. Ikeda, K. Yoshida, M. Sato, J. Chen, Y. Du, K. Inoue, R. Maaß, Y. Nagai, T. J. Konno

    Journal of Applied Physics 131 (16) 2022/04

    DOI: 10.1063/5.0070471  

    ISSN: 0021-8979

    eISSN: 1089-7550

  15. In Situ TEM Observation and MD Simulation of Frank Partial Dislocation Climbing in Al-Cu Alloy

    Jiao Chen, Kenta Yoshida, Tomoaki Suzudo, Yusuke Shimada, Koji Inoue, Toyohiko J. Konno, Yasuyoshi Nagai

    MATERIALS TRANSACTIONS 63 (4) 468-474 2022/02

    DOI: 10.2320/matertrans.MT-M2021233  

    ISSN: 1345-9678

    eISSN: 1347-5320

  16. Direct observation of local chemical ordering in a few nanometer range in CoCrNi medium-entropy alloy by atom probe tomography and its impact on mechanical properties Peer-reviewed

    Koji Inoue, Shuhei Yoshida, Nobuhiro Tsuji

    Physical Review Materials 5 (8) 2021/08/26

    Publisher: American Physical Society (APS)

    DOI: 10.1103/PhysRevMaterials.5.085007  

    eISSN: 2475-9953

  17. Segregation mechanism of arsenic dopants at grain boundaries in silicon

    Yutaka Ohno, Tatsuya Yokoi, Yasuo Shimizu, Jie Ren, Koji Inoue, Yasuyoshi Nagai, Kentaro Kutsukake, Kozo Fujiwara, Atsutomo Nakamura, Katsuyuki Matsunaga, Hideto Yoshida

    Science and Technology of Advanced Materials: Methods 1 (1) 169-180 2021/08/20

    Publisher: Informa UK Limited

    DOI: 10.1080/27660400.2021.1969701  

    eISSN: 2766-0400

  18. Recovery features of kink boundaries upon post-annealing of a hot-extruded Mg-Zn-Y alloy

    Daisuke Egusa, Koji Inoue, Yasuyoshi Nagai, Eiji Abe

    Materials Characterization 177 2021/07

    DOI: 10.1016/j.matchar.2021.111153  

    ISSN: 1044-5803

  19. Radiation-enhanced diffusion of copper in iron studied by three-dimensional atom probe

    T. Toyama, C. Zhao, T. Yoshiie, S. Yamasaki, S. Uno, M. Shimodaira, H. Miyata, T. Suzudo, Y. Shimizu, K. Yoshida, K. Inoue, Y. Nagai

    Journal of Nuclear Materials 556 153176-153176 2021/07

    Publisher: Elsevier BV

    DOI: 10.1016/j.jnucmat.2021.153176  

    ISSN: 0022-3115

  20. Investigation of Cu Diffusivity in Fe by a Combination of Atom Probe Experiments and Kinetic Monte Carlo Simulation

    Can Zhao, Tomoaki Suzudo, Takeshi Toyama, Shigeto Nishitani, Koji Inoue, Yasuyoshi Nagai

    MATERIALS TRANSACTIONS 62 (7) 929-934 2021/07/01

    Publisher: Japan Institute of Metals

    DOI: 10.2320/matertrans.mt-m2021028  

    ISSN: 1345-9678

    eISSN: 1347-5320

  21. Insight into segregation sites for oxygen impurities at grain boundaries in silicon

    Yutaka Ohno, Jie Ren, Shingo Tanaka, Masanori Kohyama, Koji Inoue, Yasuo Shimizu, Yasuyoshi Nagai, Hideto Yoshida

    APPLIED PHYSICS EXPRESS 14 (4) 2021/04

    DOI: 10.35848/1882-0786/abe80d  

    ISSN: 1882-0778

    eISSN: 1882-0786

  22. Iron nitride, α″-Fe16N2, around <100> interstitial type dislocation loops in neutron-irradiated iron Peer-reviewed

    T. Yoshiie, K. Inoue, K. Yoshida, T. Toyama, Y. Satoh, Y. Nagai

    Philosophical Magazine 1-12 2021/02/26

    Publisher: Informa UK Limited

    DOI: 10.1080/14786435.2021.1891317  

    ISSN: 1478-6435

    eISSN: 1478-6443

  23. Correlative atom probe tomography and scanning transmission electron microscopy reveal growth sequence of LPSO phase in Mg alloy containing Al and Gd International-journal Peer-reviewed

    Koji Inoue, Kenta Yoshida, Yasuyoshi Nagai, Kyosuke Kishida, Haruyuki Inui

    Scientific Reports 11 (1) 3073-3073 2021/02

    Publisher: Springer Science and Business Media LLC

    DOI: 10.1038/s41598-021-82705-3  

    eISSN: 2045-2322

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    <title>Abstract</title>Atom probe tomography (APT) and transmission electron microscopy (TEM)/scanning transmission electron microscopy (STEM) have been used correlatively to explore atomic-scale local structure and chemistry of the exactly same area in the vicinity of growth front of a long-period stacking ordered (LPSO) phase in a ternary Mg–Al–Gd alloy. It is proved for the first time that enrichment of Gd atoms in four consecutive (0001) atomic layers precedes enrichment of Al atoms so that the formation of Al6Gd8 clusters occurs only after sufficient Al atoms to form Al6Gd8 clusters diffuse into the relevant portions. Lateral growth of the LPSO phase is found to occur by ‘ledge’ mechanism with the growth habit plane either {1<inline-formula><alternatives><tex-math>$$\overline{1}$$</tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math></alternatives></inline-formula>00} or {11<inline-formula><alternatives><tex-math>$$\overline{2}$$</tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math></alternatives></inline-formula>0} planes. The motion of ledges that give rise to lateral growth of the LPSO phase is considered to be controlled by diffusion of Al atoms.

  24. Crystallite distribution analysis based on hydrogen content in thin-film nanocrystalline silicon solar cells by atom probe tomography

    Yasuo Shimizu, Hitoshi Sai, Takuya Matsui, Kenji Taki, Taiki Hashiguchi, Hirotaka Katayama, Mitsuhiro Matsumoto, Akira Terakawa, Koji Inoue, Yasuyoshi Nagai

    APPLIED PHYSICS EXPRESS 14 (1) 2021/01

    DOI: 10.35848/1882-0786/abd13f  

    ISSN: 1882-0778

    eISSN: 1882-0786

  25. 3D impurity profiles of doped/intrinsic amorphous-silicon layers composing textured silicon heterojunction solar cells detected by atom probe tomography

    Yasuo Shimizu, Bin Han, Naoki Ebisawa, Yoshinari Ichihashi, Taiki Hashiguchi, Hirotaka Katayama, Mitsuhiro Matsumoto, Akira Terakawa, Koji Inoue, Yasuyoshi Nagai

    APPLIED PHYSICS EXPRESS 13 (12) 2020/12

    ISSN: 1882-0778

    eISSN: 1882-0786

  26. In-situ WB-STEM observation of dislocation loop behavior in reactor pressure vessel steel during post-irradiation annealing Peer-reviewed

    Yufeng Du, Kenta Yoshida, Yusuke Shimada, Takeshi Toyama, Koji Inoue, Kazuto Arakawa, Tomoaki Suzudo, Konstantinovic J. Milan, Robert Gerard, Somei Ohnuki, Yasuyoshi Nagai

    Materialia 12 100778-100778 2020/08

    DOI: 10.1016/j.mtla.2020.100778  

    ISSN: 2589-1529

  27. In-situ WB-STEM observation of dislocation loop behavior in reactor pressure vessel steel during post-irradiation annealing Peer-reviewed

    Yufeng Du, Kenta Yoshida, Yusuke Shimada, Takeshi Toyama, Koji Inoue, Kazuto Arakawa, Tomoaki Suzudo, Konstantinovic J. Milan, Robert Gerard, Somei Ohnuki, Yasuyoshi Nagai

    Materialia 12 100778-100778 2020/08

    DOI: 10.1016/j.mtla.2020.100778  

    ISSN: 2589-1529

  28. High concentration of vacancies induced by β″ phase formation in Al–Mg–Si alloys Peer-reviewed

    Koji Inoue, Ken Takata, Kenji Kazumi, Yasuharu Shirai

    Philosophical Magazine Letters 100 (6) 260-270 2020/06/02

    Publisher: Informa UK Limited

    DOI: 10.1080/09500839.2020.1751324  

    ISSN: 0950-0839

    eISSN: 1362-3036

  29. Static Strain Aging Mechanisms of Polycrystalline Ferritic Steel Sheets Peer-reviewed

    Yoshihiko Ono, Yoshimasa Funakawa, Kaneharu Okuda, Kazuhiro Seto, Koji Inoue, Yasuyoshi Nagai

    Tetsu-to-Hagane 106 (6) 391-401 2020/06

    Publisher: Iron and Steel Institute of Japan

    DOI: 10.2355/tetsutohagane.tetsu-2019-108  

    ISSN: 0021-1575

    eISSN: 1883-2954

  30. Multiscale characterization of the joint bonded by Cu@Ag core@shell nanoparticles International-coauthorship Peer-reviewed

    Y. Tu, P. L. Zhu, G. Li, Q. L. Ouyang, H. Chang, F. R. Zhou, Y. Shimizu, K. Inoue, Y. Nagai, R. Sun, C. P. Wong

    Applied Physics Letters 116 (21) 213101/1-213101/5 2020/05

    DOI: 10.1063/5.0007534  

  31. Effects of neutron flux on irradiation-induced hardening and defects in RPV steels studied by positron annihilation spectroscopy Peer-reviewed

    T. Toyama, T. Yamamoto, N. Ebisawa, K. Inoue, Y. Nagai, G. R. Odette

    Journal of Nuclear Materials 532 2020/04

    DOI: 10.1016/j.jnucmat.2020.152041  

    ISSN: 0022-3115

  32. Development of Niobium Bearing High Carbon Steel Sheet for Knitting Needles

    Eiji Tsuchiya, Yuta Matsumura, Yoshihiro Hosoya, Yuka Miyamoto, Takashi Kobayashi, Kazuhiro Seto, Keiko Tomura, Koji Inoue, Yasuyoshi Nagai

    ISIJ INTERNATIONAL 60 (5) 1052-1062 2020

    DOI: 10.2355/isijinternational.ISIJINT-2019-084  

    ISSN: 0915-1559

    eISSN: 1347-5460

  33. Dislocation Substructure Analysis in gamma '-Precipitated Ni-Based Alloy by X-Ray Diffraction Combined with Positron Annihilation Peer-reviewed

    Mitsuharu Yonemura, Koji Inoue

    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE 50A (7) 3201-3212 2019/07

    DOI: 10.1007/s11661-019-05228-7  

    ISSN: 1073-5623

    eISSN: 1543-1940

  34. Hydrogen behavior in Al2O3/HfxSi1-xO2/SiO2 gate dielectric stacks in memory device structures analyzed by atom probe tomography Invited

    Y. Shimizu, K. Inoue, K. Nagumo, Y. Nagai

    IMR KINKEN Research Highlights 2019 33-33 2019/07

  35. Diffusionless isothermal omega transformation in titanium alloys driven by quenched-in compositional fluctuations Peer-reviewed

    Masakazu Tane, Hiroki Nishiyama, Akihiro Umeda, Norihiko L. Okamoto, Koji Inoue, Martin Luckabauer, Yasuyoshi Nagai, Tohru Sekino, Takayoshi Nakano, Tetsu Ichitsubo

    PHYSICAL REVIEW MATERIALS 3 (4) 2019/04

    DOI: 10.1103/PhysRevMaterials.3.043604  

    ISSN: 2475-9953

  36. Evaluation of spatial and temporal resolution on in situ annealing aberration-corrected transmission electron microscopy with proportional–integral–differential controller Peer-reviewed

    Yusuke Shimada, Kenta Yoshida, Koji Inoue, Takahisa Shiraishi, Takanori Kiguchi, Yasuyoshi Nagai, Toyohiko J. Konno

    Microscopy 68 (3) 1-8 2019/03

    DOI: 10.1093/jmicro/dfz010  

    ISSN: 2050-5698

    eISSN: 2050-5701

  37. Outstanding tensile properties of a precipitation-strengthened FeCoNiCrTi0.2 high-entropy alloy at room and cryogenic temperatures Peer-reviewed

    Y. Tong, D. Chen, B. Han, J. Wang, R. Feng, T. Yang, C. Zhao, Y. L. Zhao, W. Guo, Y. Shimizu, C. T. Liu, P. K. Liaw, K. Inoue, Y. Nagai, A. Hu, J. J. Kai

    Acta Materialia 165 228-240 2019/02

    DOI: 10.1016/j.actamat.2018.11.049  

  38. Development of Niobium Bearing High Carbon Steel Sheet for Knitting Needles Peer-reviewed

    Eiji Tsuchiya, Yuta Matsumura, Yoshihiro Hosoya, Yuka Miyamoto, Takashi Kobayashi, Kazuhiro Seto, Keiko Tomura, Koji Inoue, Yasuyoshi Nagai

    TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN 105 (1) 76-85 2019/01

    DOI: 10.2355/tetsutohagane.TETSU-2018-097  

    ISSN: 0021-1575

    eISSN: 1883-2954

  39. Roles of Solute C and Grain Boundary in Strain Aging Behaviour of Fine-grained Ultra-low Carbon Steel Sheets Peer-reviewed

    Ono Yoshihiko, Funakawa Yoshimasa, Okuda Kaneharu, Seto Kazuhiro, Ebisawa Naoki, Inoue Koji, Nagai Yasuyoshi

    TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN 105 (4) 452-461 2019

    DOI: 10.2355/tetsutohagane.TETSU-2018-110  

    ISSN: 0021-1575

  40. Vacancy Behavior during Aging at 50 and 100 degrees C in Al-Mg-Si Alloys with Excess Si Studied by Positron Annihilation Spectroscopy Peer-reviewed

    Koji Inoue, Ken Takata, Koji Ichitani, Yasuharu Shirai

    MATERIALS TRANSACTIONS 60 (11) 2255-2259 2019

    DOI: 10.2320/matertrans.L-M2019846  

    ISSN: 1345-9678

    eISSN: 1347-5320

  41. Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding Peer-reviewed

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

    PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 56-56 2019

    DOI: 10.23919/LTB-3D.2019.8735167  

  42. Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study Peer-reviewed

    Y. Tu, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, Y. Nagai

    Journal of Applied Physics 124 (15) 155702/1-155702/8 2018/10

    DOI: 10.1063/1.5048313  

  43. Direct observation of deuterium trapping at irradiation-induced vacancy clusters in tungsten by positron annihilation spectroscopy Invited

    Y. Nagai, K. Inoue, Y. Shimizu, K. Nagumo

    IMR KINKEN Research Highlights 2018 19-19 2018/07

  44. Industrial application of atom probe tomography to semiconductor devices Peer-reviewed

    Alexander Devin Giddings, Sebastian Koelling, Yasuo Shimizu, Robert Estivill, Koji Inoue, Wilfried Vandervorst, Wai Kong Yeoh

    Scripta Materialia 148 82-90 2018/04/15

    DOI: 10.1016/j.scriptamat.2017.09.004  

    ISSN: 1359-6462

  45. Composition evolution of gamma prime nanoparticles in the Ti-doped CoFeCrNi high entropy alloy Peer-reviewed

    Bin Han, Jie Wei, Yang Tong, Da Chen, Yilu Zhao, Jing Wang, Feng He, Tao Yang, Can Zhao, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Alice Hu, Chain Tsuan Liu, Ji Jung Kai

    Scripta Materialia 148 42-46 2018/04/15

    DOI: 10.1016/j.scriptamat.2018.01.025  

    ISSN: 1359-6462

  46. Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1-xO2/SiO2 high- k stacks as evidenced by atom probe tomography Peer-reviewed

    Y. Tu, B. Han, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, Y. Nagai

    Applied Physics Letters 112 (3) 032902 2018/01/15

    DOI: 10.1063/1.5010256  

    ISSN: 0003-6951

  47. Deuterium trapping at vacancy clusters in electron/neutron-irradiated tungsten studied by positron annihilation spectroscopy Peer-reviewed

    Toyama, T., Ami, K., Inoue, K., Nagai, Y., Sato, K., Xu, Q., Hatano, Y.

    Journal of Nuclear Materials 499 464-470 2018

    DOI: 10.1016/j.jnucmat.2017.11.022  

    ISSN: 0022-3115

  48. Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations Peer-reviewed

    Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama

    JOURNAL OF MICROSCOPY 268 (3) 230-238 2017/12

    DOI: 10.1111/jmi.12602  

    ISSN: 0022-2720

    eISSN: 1365-2818

  49. 1.54 mu m photoluminescence from Er:O-x centers at extremely low concentration in silicon at 300 K Peer-reviewed

    Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii, Enrico Prati

    OPTICS LETTERS 42 (17) 3311-3314 2017/09

    DOI: 10.1364/OL.42.003311  

    ISSN: 0146-9592

    eISSN: 1539-4794

  50. Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures Peer-reviewed

    Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, T. Tanii, T. Shinada, Y. Nagai

    NANOTECHNOLOGY 28 (38) 385301 2017/09

    DOI: 10.1088/1361-6528/aa7f49  

    ISSN: 0957-4484

    eISSN: 1361-6528

  51. Atom probe analysis of silicon nanocrystals embedded in silicon dioxide matrix Invited

    Y. Shimizu, Y. Nagai, K. Inoue

    IMR KINKEN Research Highlights 2017 32-32 2017/07

  52. Weak-beam scanning transmission electron microscopy for quantitative dislocation density measurement in steels Peer-reviewed

    Kenta Yoshida, Masaki Shimodaira, Takeshi Toyama, Yasuo Shimizu, Koji Inoue, Toshimasa Yoshiie, Konstantinovic J. Milan, Robert Gerard, Yasuyoshi Nagai

    MICROSCOPY 66 (2) 120-130 2017/04

    DOI: 10.1093/jmicro/dfw111  

    ISSN: 2050-5698

    eISSN: 2050-5701

  53. Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon Peer-reviewed

    Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Kentaro Kutsukake, Momoko Deura, Ichiro Yonenaga, Naoki Ebisawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda, Shingo Tanaka, Masanori Kohyama

    APPLIED PHYSICS LETTERS 110 (6) 062105/1-062105/5 2017/02

    DOI: 10.1063/1.4975814  

    ISSN: 0003-6951

    eISSN: 1077-3118

  54. Atom Probe Study of Erbium and Oxygen Co-Implanted Silicon Peer-reviewed

    Yasuo Shimizu, Yuan Tu, Ayman Abdelghafar, Maasa Yan, Yudai Suzuki, Takashi Tanii, Takahiro Shinada, Enrico Prati, Michele Celebrano, Marco Finazzi, Lavinia Ghirardini, Koji Inoue, Yasuyoshi Nagai

    2017 SILICON NANOELECTRONICS WORKSHOP (SNW) 99-100 2017

    DOI: 10.23919/SNW.2017.8242316  

    ISSN: 2161-4636

  55. Revisiting room-temperature 1.54 mu m photoluminescence of ErOx centers in silicon at extremely low concentration Peer-reviewed

    2017 SILICON NANOELECTRONICS WORKSHOP (SNW) 105-106 2017

    ISSN: 2161-4636

  56. Roles of Solute C and Grain Boundary in Strain Aging Behaviour of Fine-grained Ultra-low Carbon Steel Sheets Peer-reviewed

    Yoshihiko Ono, Yoshimasa Funakawa, Kaneharu Okuda, Kazuhiro Seto, Naoki Ebisawa, Koji Inoue, Yasuyoshi Nagai

    ISIJ INTERNATIONAL 57 (7) 1273-1281 2017

    DOI: 10.2355/isijinternational.ISIJINT-2016-622  

    ISSN: 0915-1559

    eISSN: 1347-5460

  57. Influence of laser power on atom probe tomographic analysis of boron distribution in silicon Peer-reviewed

    Tu, Y., Takamizawa, H., Han, B., Shimizu, Y., Inoue, K., Toyama, T., Yano, F., Nishida, A., Nagai, Y.

    Ultramicroscopy 173 58-63 2017

    DOI: 10.1016/j.ultramic.2016.11.023  

    ISSN: 0304-3991

  58. Dislocation Substructure in the Cold-Rolled Ni-20 Mass Pct Cr Alloy Analyzed by X-ray Diffraction, Positron Annihilation Lifetime, and Transmission Electron Microscopy Peer-reviewed

    Mitsuharu Yonemura, Koji Inoue

    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE 47A (12) 6384-6393 2016/12

    DOI: 10.1007/s11661-016-3717-y  

    ISSN: 1073-5623

    eISSN: 1543-1940

  59. Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals Peer-reviewed

    Yutaka Ohno, Kentaro Kutsukake, Momoko Deura, Ichiro Yonenaga, Yasuo Shimizu, Naoki Ebisawa, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda

    APPLIED PHYSICS LETTERS 109 (14) 142105/1-142105/4 2016/10

    DOI: 10.1063/1.4964440  

    ISSN: 0003-6951

    eISSN: 1077-3118

  60. Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography Peer-reviewed

    Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuko Nozawa, Takeshi Toyama, Fumiko Yano, Masao Inoue, Akio Nishida, Yasuyoshi Nagai

    APPLIED PHYSICS EXPRESS 9 (10) 106601/1-106601/4 2016/10

    DOI: 10.7567/APEX.9.106601  

    ISSN: 1882-0778

    eISSN: 1882-0786

  61. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography Peer-reviewed

    Yorinobu Kunimune, Yasuhiro Shimada, Yusuke Sakurai, Masao Inoue, Akio Nishida, Bin Han, Yuan Tu, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Fumiko Yano, Yasuyoshi Nagai, Toshiharu Katayama, Takashi Ide

    AIP ADVANCES 6 (4) 045121/1-045121/7 2016/04

    DOI: 10.1063/1.4948558  

    ISSN: 2158-3226

  62. Suppression of segregation of the phosphorus delta-doping layer in germanium by incorporation of carbon Peer-reviewed

    Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Kohei M. Itoh

    JAPANESE JOURNAL OF APPLIED PHYSICS 55 (3) 031304/1-031304/5 2016/03

    DOI: 10.7567/JJAP.55.031304  

    ISSN: 0021-4922

    eISSN: 1347-4065

  63. Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements Peer-reviewed

    Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, Fumiko Yano, Shuichi Kudo, Akio Nishida, Takeshi Toyama, Yasuyoshi Nagai

    JAPANESE JOURNAL OF APPLIED PHYSICS 55 (2) 026501/1-026501/5 2016/02

    DOI: 10.7567/JJAP.55.026501  

    ISSN: 0021-4922

    eISSN: 1347-4065

  64. 22aAQ-8 Analysis of Irradiation Induced Defect-Solute Cluster Interaction by 3D Atom Probe, Transmission Electron Microscopy and Positron Annihilation

    Nagai Y., Shimodaira M., Yoshida K., Toyama T., Inoue K., Konstantinovic M., Gerard R.

    Meeting Abstracts of the Physical Society of Japan 71 2761-2761 2016

    Publisher: The Physical Society of Japan (JPS)

    DOI: 10.11316/jpsgaiyo.71.1.0_2761  

    ISSN: 2189-079X

  65. 21pAQ-8 Material analysis using positron annihilation combined with atom probe tomography

    Inoue Koji

    Meeting Abstracts of the Physical Society of Japan 71 2738-2739 2016

    Publisher: The Physical Society of Japan (JPS)

    DOI: 10.11316/jpsgaiyo.71.1.0_2738  

    ISSN: 2189-079X

  66. 22aAQ-7 Copper segregation mechanism at small angle tilt boundaries in Si

    Ohno Y., Inoue K., Fujiwara K., Deura M., Yonenaga I., Ebisawa N., Shimizu Y., Inoue K., Nagai Y., Yoshida H., Takeda S., Taniguchi R., Otubo H., Nishitani S. R., Kutsukake K.

    Meeting Abstracts of the Physical Society of Japan 71 2760-2760 2016

    Publisher: The Physical Society of Japan (JPS)

    DOI: 10.11316/jpsgaiyo.71.1.0_2760  

    ISSN: 2189-079X

  67. Local Strain Analysis in Reactor Pressure Vessel Steels using Aberration Corrected Transmission Electron Microscope

    Shimodaira Masaki, Yoshida Kenta, Toyama Takeshi, Ebisawa Naoki, Tomura Keiko, Inoue Koji, Nagai Yasuyoshi, Konstantinovic Milan, Gerard Robert

    Meeting Abstracts of the Physical Society of Japan 71 2523-2523 2016

    Publisher: The Physical Society of Japan

    DOI: 10.11316/jpsgaiyo.71.2.0_2523  

  68. Boron distributions in individual core-shell Ge/Si and Si/Ge heterostructured nanowires Peer-reviewed

    Bin Han, Yasuo Shimizu, Jevasuwan Wipakorn, Kotaro Nishibe, Yuan Tu, Koji Inoue, Naoki Fukata, Yasuyoshi Nagai

    NANOSCALE 8 (47) 19811-19815 2016

    DOI: 10.1039/c6nr04384d  

    ISSN: 2040-3364

    eISSN: 2040-3372

  69. Atom probe tomography of nanoscale electronic materials Peer-reviewed

    D. J. Larson, T. J. Prosa, D. E. Perea, K. Inoue, D. Mangelinck

    MRS BULLETIN 41 (1) 30-34 2016/01

    DOI: 10.1557/mrs.2015.308  

    ISSN: 0883-7694

    eISSN: 1938-1425

  70. Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography Peer-reviewed

    Bin Han, Yasuo Shimizu, Gabriele Seguini, Elisa Arduca, Celia Castro, Gerard Ben Assayag, Koji Inoue, Yasuyoshi Nagai, Sylvie Schamm-Chardon, Michele Perego

    RSC ADVANCES 6 (5) 3617-3622 2016

    DOI: 10.1039/c5ra26710b  

    ISSN: 2046-2069

  71. 陽電子消滅同時計数ドップラー広がりによる元素分析法 Peer-reviewed

    井上耕治, 永井康介

    陽電子科学 6 21-28 2016

  72. Hole size distributions in cardo-based polymer membranes deduced from the lifetimes of ortho-positronium Peer-reviewed

    Kobayashi, Y., Kinomura, A., Kazama, S., Inoue, K., Toyama, T., Nagai, Y., Haraya, K., Mohamed, H. F. M., O'Rourke, B. E., Oshima, N., Suzuki, R.

    International Workshop on Positron Studies of Defects 2014 674 012017 2016

    DOI: 10.1088/1742-6596/674/1/012017  

  73. The diffusivity and solubility of copper in a reactor pressure vessel steel studied by atom probe tomography

    Y. Nagai, K. Inoue, Y. Shimizu, K. Nagumo

    IMR KINKEN Research Highlights 2016 20 2016

  74. Characterization and process development of CVD/ALD-based Cu(Mn)/Co(W) interconnect system Peer-reviewed

    K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    Proceedings of Advanced Metallization Conference 2016

  75. Elemental Distribution in Multilayer Systems by Laser-Assisted Atom Probe Tomography with Various Analysis Directions Peer-reviewed

    Masaki Kubota, Hisashi Takamizawa, Yasuo Shimizu, Yasuko Nozawa, Naoki Ebisawa, Takeshi Toyama, Yoichi Ishida, Katsuaki Yanagiuchi, Koji Inoue, Yasuyoshi Nagai

    MICROSCOPY AND MICROANALYSIS 21 (6) 1373-1378 2015/12

    DOI: 10.1017/S1431927615015160  

    ISSN: 1431-9276

    eISSN: 1435-8115

  76. Diffusivity and Solubility of Cu in a Reactor Pressure Vessel Steel Studied by Atom Probe Tomography Peer-reviewed

    Masaki Shimodaira, Takeshi Toyama, Fumihiko Takahama, Naoki Ebisawa, Yasuko Nozawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai

    MATERIALS TRANSACTIONS 56 (9) 1513-1516 2015/09

    DOI: 10.2320/matertrans.M2015072  

    ISSN: 1345-9678

    eISSN: 1347-5320

  77. Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography Peer-reviewed

    Bin Han, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Fumiko Yano, Yorinobu Kunimune, Masao Inoue, Akio Nishida

    APPLIED PHYSICS LETTERS 107 (2) 023506/1-023506/4 2015/07

    DOI: 10.1063/1.4926970  

    ISSN: 0003-6951

    eISSN: 1077-3118

  78. Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si Peer-reviewed

    Yutaka Ohno, Kaihei Inoue, Kentaro Kutsukake, Momoko Deura, Takayuki Ohsawa, Ichiro Yonenaga, Hideto Yoshida, Seiji Takeda, Ryo Taniguchi, Hideki Otubo, Sigeto R. Nishitani, Naoki Ebisawa, Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, Yasuyoshi Nagai

    PHYSICAL REVIEW B 91 (23) 235315/1-235315/5 2015/06

    DOI: 10.1103/PhysRevB.91.235315  

    ISSN: 1098-0121

    eISSN: 1550-235X

  79. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals Peer-reviewed

    Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Momoko Deura, Kentaro Kutsukake, Ichiro Yonenaga, Yasuo Shimizu, Koji Inoue, Naoki Ebisawa, Yasuyoshi Nagai

    APPLIED PHYSICS LETTERS 106 (25) 251603/1-251603/4 2015/06

    DOI: 10.1063/1.4921742  

    ISSN: 0003-6951

    eISSN: 1077-3118

  80. Microstructural evolution of RPV steels under proton and ion irradiation studied by positron annihilation spectroscopy Peer-reviewed

    J. Jiang, Y. C. Wu, X. B. Liu, R. S. Wang, Y. Nagai, K. Inoue, Y. Shimizu, T. Toyama

    JOURNAL OF NUCLEAR MATERIALS 458 326-334 2015/03

    DOI: 10.1016/j.jnucmat.2014.12.113  

    ISSN: 0022-3115

    eISSN: 1873-4820

  81. 17aAB-2 Oxygen segregation mechanism at small angle tilt boundaries in Si

    Ohno Y., Inoue K., Fujiwara K., Deura M., Kutsukake K., Yonenaga I., Shimizu Y., Inoue K., Ebisawa N., Nagai Y.

    Meeting Abstracts of the Physical Society of Japan 70 2434-2434 2015

    Publisher: The Physical Society of Japan (JPS)

    DOI: 10.11316/jpsgaiyo.70.2.0_2434  

    ISSN: 2189-079X

  82. 21pCH-5 Microstructure Change in Nuclear Reactor Vessel Steels by Neutron Irradiation in High Dose Region

    Nagai Y., Shimodaira M., Toyama T., Inoue K., Konstantinovic M., Gerard R.

    Meeting Abstracts of the Physical Society of Japan 70 2692-2692 2015

    Publisher: The Physical Society of Japan (JPS)

    DOI: 10.11316/jpsgaiyo.70.1.0_2692  

    ISSN: 2189-079X

  83. Development of a mono-energetic positron beam line at the Kyoto University Research Reactor Peer-reviewed

    K. Sato, Q. Xu, T. Yoshiie, T. Sano, H. Kawabe, Y. Nagai, K. Nagumo, K. Inoue, T. Toyama, N. Oshima, A. Kinomura, Y. Shirai

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 342 104-107 2015/01

    DOI: 10.1016/j.nimb.2014.09.022  

    ISSN: 0168-583X

    eISSN: 1872-9584

  84. 3次元アトムプローブ法を用いたSiO2/SiN/SiO2積層膜中の水素濃度分析

    島田康弘, 国宗依信, 片山俊治, 井手隆, 井上真雄, 清水康雄, 韓斌, 井上耕治, 永井康介, 矢野史子

    第45回信頼性・保全性シンポジウム(45R&MS)報文 377-381 2015

  85. Atom probe analysis of dopant and contaminant diffusion on silicon introduced by the molecular doping method

    Y. Shimizu, K. Nagumo, K. Inoue, Y. Nagai

    IMR KINKEN Research Highlights 2015 35 2015

  86. 3次元アトムプローブ法を用いたONO膜中の水素濃度定量分析

    国宗依信, 島田康弘, 井上真雄, 韓斌, 涂远, 清水康雄, 井上耕治, 矢野史子, 永井康介, 片山俊治, 井手隆

    第35回ナノテスティングシンポジウム会議録 259-264 2015

  87. Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography Peer-reviewed

    K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    APPLIED PHYSICS LETTERS 105 (13) 133512 2014/09

    DOI: 10.1063/1.4896961  

    ISSN: 0003-6951

    eISSN: 1077-3118

  88. Diffusivity and Solubility of Cu in a Reactor Pressure Vessel Steel Studied by Atom Probe Tomography Peer-reviewed

    Masaki Shimodaira, Takeshi Toyama, Fumihiko Takahama, Naoki Ebisawa, Yasuko Nozawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai

    MATERIALS TRANSACTIONS 55 (9) 1460-1463 2014/09

    DOI: 10.2320/matertrans.MAW201410  

    ISSN: 1345-9678

    eISSN: 1347-5320

  89. The diffusivity and solubility of copper in ferromagnetic-iron at lower temperatures studied by atom probe tomography Peer-reviewed

    T. Toyama, F. Takahama, A. Kuramoto, H. Takamizawa, Y. Nozawa, N. Ebisawa, M. Shimodaira, Y. Shimizu, K. Inoue, Y. Nagai

    Scripta Materialia 83 (9) 5-1463 2014/09

    DOI: 10.2320/matertrans.MAW201410  

    ISSN: 1345-9678

  90. The diffusivity and solubility of copper in ferromagnetic iron at lower temperatures studied by atom probe tomography Peer-reviewed

    T. Toyama, F. Takahama, A. Kuramoto, H. Takamizawa, Y. Nozawa, N. Ebisawa, M. Shimodaira, Y. Shimizu, K. Inoue, Y. Nagai

    SCRIPTA MATERIALIA 83 5-8 2014/07

    DOI: 10.1016/j.scriptamat.2014.03.009  

    ISSN: 1359-6462

  91. Czochralski growth of heavily tin-doped Si crystals Peer-reviewed

    I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, Y. Ohno

    JOURNAL OF CRYSTAL GROWTH 395 94-97 2014/06

    DOI: 10.1016/j.jcrysgro.2014.02.052  

    ISSN: 0022-0248

    eISSN: 1873-5002

  92. Positron Annihilation in Cardo-Based Polymer Membranes Peer-reviewed

    Y. Kobayashi, Shingo Kazama, K. Inoue, T. Toyama, Y. Nagai, K. Haraya, Hamdy F. M. Mohamed, B. E. O'Rouke, N. Oshima, A. Kinomura, R. Suzuki

    JOURNAL OF PHYSICAL CHEMISTRY B 118 (22) 6007-6014 2014/06

    DOI: 10.1021/jp501706d  

    ISSN: 1520-6106

  93. Effects of post-irradiation annealing and re-irradiation on microstructure in surveillance test specimens of the Loviisa-1 reactor studied by atom probe tomography and positron annihilation Peer-reviewed

    T. Toyama, A. Kuramoto, Y. Nagai, K. Inoue, Y. Nozawa, Y. Shimizu, Y. Matsukawa, M. Hasegawa, M. Valo

    JOURNAL OF NUCLEAR MATERIALS 449 (1-3) 207-212 2014/06

    DOI: 10.1016/j.jnucmat.2014.01.036  

    ISSN: 0022-3115

    eISSN: 1873-4820

  94. Short and medium range order in two-component silica glasses by positron annihilation spectroscopy Peer-reviewed

    K. Inoue, H. Kataoka, Y. Nagai, M. Hasegawa, Y. Kobayashi

    JOURNAL OF APPLIED PHYSICS 115 (20) 204903 2014/05

    DOI: 10.1063/1.4878457  

    ISSN: 0021-8979

    eISSN: 1089-7550

  95. Positron annihilation study for enhanced nitrogen-vacancy center formation in diamond by electron irradiation at 77 K Peer-reviewed

    Z. Tang, T. Chiba, Y. Nagai, K. Inoue, T. Toyama, M. Hasegawa

    APPLIED PHYSICS LETTERS 104 (17) 172101 2014/04

    DOI: 10.1063/1.4872243  

    ISSN: 0003-6951

    eISSN: 1077-3118

  96. Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method Peer-reviewed

    Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, Fumiko Yano, Yasuyoshi Nagai, Luca Lamagna, Giovanni Mazzeo, Michele Perego, Enrico Prati

    NANOSCALE 6 (2) 706-710 2014

    DOI: 10.1039/c3nr03605g  

    ISSN: 2040-3364

    eISSN: 2040-3372

  97. Positron beam facility at Kyoto University Research Reactor Peer-reviewed

    Q. Xu, K. Sato, T. Yoshiie, T. Sano, H. Kawabe, Y. Nagai, K. Inoue, T. Toyama, N. Oshima, A. Kinomura, Y. Shirai

    Journal of Physics: Conference Series 505 012030 2014

    DOI: 10.1088/1742-6596/505/1/012030  

    ISSN: 1742-6588

  98. 構造材料の劣化機構解明へ向けた3次元アトムプローブの応用 Peer-reviewed

    外山健, 井上耕治, 永井康介

    機能材料 34 (6) 3-10 2014

    Publisher:

    ISSN: 0286-4835

  99. Depth Analysis of Ta/NiFe/Ta/CoFeB/Ta/NiFe Multilayer Thin Films: Comparison of Atom Probe Tomography and Auger Electron Spectroscopy Peer-reviewed

    M. Kubota, Y. Ishida, K. Yanagiuchi, H. Takamizawa, Y. Nozawa, N. Ebisawa, Y. Shimizu, T. Toyama, K. Inoue, Y. Nagai

    Journal of Surface Analysis 20 (3) 207-210 2014

  100. 3D-APと陽電子消滅-LPSO構造の局所組成解析・空隙分析-

    井上耕治, 永井康介

    応用物理学会第42回薄膜表面物理セミナーテキスト 17-24 2014

  101. Microstructural origins of embrittlement in nuclear reactor pressure vessel steels.

    Y. Nagai, K. Inoue, Y. Shimizu, K. Nagumo

    IMR KINKEN Research Highlights 2014 19 2014

  102. Reaction of positronium with doped ions in silica-based glasses in the size determination of subnanometer structural open spaces Peer-reviewed

    K. Inoue, H. Kataoka, Y. Nagai, M. Hasegawa, Y. Kobayashi

    JOURNAL OF APPLIED PHYSICS 114 (15) 154904-1-154904-7 2013/10

    DOI: 10.1063/1.4825131  

    ISSN: 0021-8979

    eISSN: 1089-7550

  103. Three-dimensional evaluation of gettering ability of Sigma 3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy Peer-reviewed

    Yutaka Ohno, Kaihei Inoue, Yuki Tokumoto, Kentaro Kutsukake, Ichiro Yonenaga, Naoki Ebisawa, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda

    APPLIED PHYSICS LETTERS 103 (10) 102102/1-102102/4 2013/09

    DOI: 10.1063/1.4820140  

    ISSN: 0003-6951

    eISSN: 1077-3118

  104. Microstructural changes in a Russian-type reactor weld material after neutron irradiation, post-irradiation annealing and re-irradiation studied by atom probe tomography and positron annihilation spectroscopy Peer-reviewed

    A. Kuramoto, T. Toyama, Y. Nagai, K. Inoue, Y. Nozawa, M. Hasegawa, M. Valo

    Acta Materialia 61 (14) 5236-5246 2013/08

    DOI: 10.1016/j.actamat.2013.05.016  

    ISSN: 1359-6454

  105. Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography Peer-reviewed

    Hisashi Takamizawa, Katsuya Hoshi, Yasuo Shimizu, Fumiko Yano, Koji Inoue, Shinji Nagata, Tatsuo Shikama, Yasuyoshi Nagai

    APPLIED PHYSICS EXPRESS 6 (6) 066602-1-066602-3 2013/06

    DOI: 10.7567/APEX.6.066602  

    ISSN: 1882-0778

  106. Lattice Defects of Cold-drawn and Aged Fe-36wt%Ni Alloys and Effects of Additions of C and V on Hardness and Thermal Expansion Peer-reviewed

    Kazuo Nakama, Shinichi Furuya, Kazuki Sugita, Koji Inoue, Yasuharu Shirai

    TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN 99 (5) 380-389 2013/05

    DOI: 10.2355/tetsutohagane.99.380  

    ISSN: 0021-1575

    eISSN: 1883-2954

  107. Single atom imaging-dopant atoms in silicon-based semiconductor devices- by atom probe tomography Peer-reviewed

    Koji Inoue, Yasuyoshi Nagai

    Single-Atom Nanoelectronics 151-186 2013/04/30

    Publisher: Pan Stanford Publishing Pte. Ltd.

    DOI: 10.4032/9789814316699  

  108. Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65 nm Node by Atom Probe Tomography Peer-reviewed

    Koji Inoue, Hisashi Takamizawa, Yasuo Shimizu, Fumiko Yano, Takeshi Toyama, Akio Nishida, Tohru Mogami, Katsuyuki Kitamoto, Takahiro Miyagi, Jun Kato, Seishi Akahori, Noriyuki Okada, Mikio Kato, Hiroshi Uchida, Yasuyoshi Nagai

    APPLIED PHYSICS EXPRESS 6 (4) 046502 2013/04

    DOI: 10.7567/APEX.6.046502  

    ISSN: 1882-0778

  109. Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography Peer-reviewed

    Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E. E. Haller, K. M. Itoh, Y. Nagai

    J. Appl. Phys. 113 (2) 026101 2013/01/14

    DOI: 10.1063/1.4773675  

    ISSN: 0021-8979

  110. 引抜加工-時効処理したFe-36wt%Niインバー合金の格子欠陥と,硬さ,熱膨張に及ぼすC,Vの影響 Peer-reviewed

    中間一夫, 古谷真一, 杉田一樹, 井上耕治, 白井泰治

    鉄と鋼 99 380 2013

    DOI: 10.2355/tetsutohagane.99.380  

  111. Elemental distribution analysis of semiconductor nanostructures with atom probe tomography Peer-reviewed

    Yasuo Shimizu, Koji Inoue, Hisashi Takamizawa, Fumiko Yano, Yasuyoshi Nagai

    Journal of the Vacuum Society of Japan 56 (9) 340-347 2013

    DOI: 10.3131/jvsj2.56.340  

    ISSN: 1882-2398 1882-4749

  112. 陽電子消滅および3次元アトムプローブによる原子炉圧力容器鋼の照射脆化機構に関する研究-フィンランド・ロビーザ炉監視試験片を例として― Peer-reviewed

    外山健, 蔵本明, M. Valo, 野沢康子, 清水康雄, 井上耕治, 長谷川雅幸, 永井康介

    陽電子科学 1 41-46 2013

  113. Positron annihilation study of the Mg-Zn -Y alloys with long period stacking ordered (LPSO) structures Peer-reviewed

    H. X. Xu, K. Inoue, Y. Nagai, T. Toyama, Y. Matsukawa, A. Kuramoto, D. Egusa, E. Abe, B. J. Ye

    Journal of Physics: Conference Series 443 (1) 012029-1-012029-4 2013

    DOI: 10.1088/1742-6596/443/1/012029  

    ISSN: 1742-6588

    eISSN: 1742-6596

  114. Three-dimensional elemental analysis in semiconductor-based actual devices with atom probe tomography.

    Y. Shimizu, K. Inoue, Y. Nagai

    IMR KINKEN Research Highlights 2013 43-44 2013

  115. Size estimation of embedded Cu nanoprecipitates in Fe by using affinitively trapped positrons Peer-reviewed

    T. Toyama, Z. Tang, K. Inoue, T. Chiba, T. Ohkubo, K. Hono, Y. Nagai, M. Hasegawa

    PHYSICAL REVIEW B 86 (10) 104106 2012/09

    DOI: 10.1103/PhysRevB.86.104106  

    ISSN: 1098-0121

  116. Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography Peer-reviewed

    H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, T. Mogami, N. Okada, M. Kato, H. Uchida, K. Kitamoto, T. Miyagi, J. Kato, Y. Nagai

    APPLIED PHYSICS LETTERS 100 (25) 253504 2012/06

    DOI: 10.1063/1.4730437  

    ISSN: 0003-6951

  117. New Applications in Atom Probe Tomography Peer-reviewed

    D. J. Larson, V. S. Smentkowski, L. M. Gordon, D. Joester, K. Inoue, D. A. Reinhard, T. J. Prosa, D. Olson, D. Lawrence, P. H. Clifton, R. M. Ulfig, I. Martin, T. F. Kelly

    Microscopy and Microanalysis 18 926-927 2012

    DOI: 10.1017/S1431927612006484  

    ISSN: 1435-8115 1431-9276

  118. 陽電子消滅法によるアルミニウム合金中の原子空孔挙動観察 Peer-reviewed

    井上耕治, 白井泰治

    低温物質科学研究センター誌 20 1 2012

  119. レーザー3次元アトムプローブによる半導体材料中のドーパント分布解析 Peer-reviewed

    井上耕治, 清水康雄, 高見澤悠

    日本物理学会誌 67 645 2012

  120. Atom-probe-tomographic Studies on Silicon-Based Semiconductor Devices Peer-reviewed

    K. Inoue, A. K. Kambham, D. Mangelinck, D. Lawrence, D. J. Larson

    Microscopy Today 20 (5) 38 2012

  121. Three-Dimensional Elemental Analysis of Commercial 45 nm Node Device with High-k/Metal Gate Stack by Atom Probe Tomography Peer-reviewed

    Koji Inoue, Hisashi Takamizawa, Katsuyuki Kitamoto, Jun Kato, Takahiro Miyagi, Yoshitsugu Nakagawa, Naohiko Kawasaki, Naoyuki Sugiyama, Hideki Hashimoto, Yasuo Shimizu, Takeshi Toyama, Yasuyoshi Nagai, Akiya Karen

    APPLIED PHYSICS EXPRESS 4 (11) 116601 2011/11

    DOI: 10.1143/APEX.4.116601  

    ISSN: 1882-0778

  122. Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging Peer-reviewed

    H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, N. Okada, M. Kato, H. Uchida, F. Yano, A. Nishida, T. Mogami, Y. Nagai

    APPLIED PHYSICS LETTERS 99 (13) 133502 2011/09

    DOI: 10.1063/1.3644960  

    ISSN: 0003-6951

  123. Impact of carbon coimplantation on boron behavior in silicon: Carbon-boron coclustering and suppression of boron diffusion Peer-reviewed

    Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, T. Mogami

    APPLIED PHYSICS LETTERS 98 (23) 232101 2011/06

    DOI: 10.1063/1.3597303  

    ISSN: 0003-6951

  124. Delocalized Positronium in BaF2 Peer-reviewed

    Koji Inoue, Naoki Suzuki, Toshio Hyodo, Yasuyoshi Nagai, Masayuki Hasegawa

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 80 (5) 054709 2011/05

    DOI: 10.1143/JPSJ.80.054709  

    ISSN: 0031-9015

  125. Time evolution of positron affinity trapping at embedded nanoparticles by age-momentum correlation Peer-reviewed

    K. Inoue, Y. Nagai, Z. Tang, T. Toyama, Y. Hosoda, A. Tsuto, M. Hasegawa

    Physical Review B - Condensed Matter and Materials Physics 83 (11) 2011/03/31

    DOI: 10.1103/PhysRevB.83.115459  

    ISSN: 1098-0121

    eISSN: 1550-235X

  126. Channel Dopant Distribution in Metal-Oxide-Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography Peer-reviewed

    Hisashi Takamizawa, Koji Inoue, Yasuo Shimizu, Takeshi Toyama, Fumiko Yano, Takaaki Tsunomura, Akio Nishida, Tohru Mogami, Yasuyoshi Nagai

    APPLIED PHYSICS EXPRESS 4 (3) 036601 2011/03

    DOI: 10.1143/APEX.4.036601  

    ISSN: 1882-0778

    eISSN: 1882-0786

  127. Time evolution of positron affinity trapping at embedded nanoparticles by age-momentum correlation Peer-reviewed

    K. Inoue, Y. Nagai, Z. Tang, T. Toyama, Y. Hosoda, A. Tsuto, M. Hasegawa

    PHYSICAL REVIEW B 83 (11) 115459 2011/03

    DOI: 10.1103/PhysRevB.83.115459  

    ISSN: 2469-9950

    eISSN: 2469-9969

  128. 3D-AP法によるSi-MOSFET中不純物分布解析 Peer-reviewed

    清水康雄, 高見澤悠, 井上耕治, 外山健, 永井康介, 矢野史子, 西田彰男

    日本学術振興会ナノプローブテクノロジー第167委員会 第63回研究会資料 50-57 2011

  129. 3次元アトムプローブ:その原理と応用-MOSFET不純物分布解析を例に- Invited

    Y. Nagai, H. Takamizawa, T. Toyama, Y. Shimizu, K. Inoue, F. Yano, T. Tsunomura, A. Nishida, T. Mogami

    応用物理学会結晶工学分科第15回結晶工学セミナーテキスト 9-15 2010/11

  130. 3次元アトムプローブ:その原理と応用-MOSFET不純物分布解析を例に- Peer-reviewed

    永井康介, 高見澤悠, 外山健, 清水康雄, 井上耕治, 矢野史子, 角村貴昭, 西田彰男, 最上徹

    応用物理学会結晶工学分科 第15回結晶工学セミナーテキスト 5-12 2010

  131. 3DAP法による炭素を共注入したシリコン基板中ホウ素分布の解析 Peer-reviewed

    清水康雄, 高見澤悠, 井上耕治, 外山健, 永井康介, 矢野史子, 角村貴昭, 西田彰男, 最上徹, 岡田徳行, 加藤幹雄, 内田博

    第30回LSTテスティングシンポジウム会議録 305-309 2010

  132. Dopant distributions in n-MOSFET structure observed by atom probe tomography Peer-reviewed

    K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, M. Hasegawa

    ULTRAMICROSCOPY 109 (12) 1479-1484 2009/11

    DOI: 10.1016/j.ultramic.2009.08.002  

    ISSN: 0304-3991

  133. Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe Peer-reviewed

    K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, M. Hasegawa

    APPLIED PHYSICS LETTERS 95 (4) 043502 2009/07

    DOI: 10.1063/1.3186788  

    ISSN: 0003-6951

    eISSN: 1077-3118

  134. Interactions between Fermi surfaces and Brillouin zone boundaries and phase stability of embedded metallic nanoparticles Peer-reviewed

    Y. Nagai, T. Toyama, Z. Tang, K. Inoue, T. Chiba, M. Hasegawa, S. Hirosawa, T. Sato

    Phys. Rev. B 79 (20) 201405 2009/05

    DOI: 10.1103/PhysRevB.79.201405  

    ISSN: 1098-0121

  135. Positron annihilation lifetime measurements of vanadium alloy and F82H irradiated with fission and fusion neutrons Peer-reviewed

    K. Sato, K. Inoue, T. Yoshiie, Q. Xu, E. Wakai, C. Kutsukake, K. Ochiai

    JOURNAL OF NUCLEAR MATERIALS 386-88 203-205 2009/04

    DOI: 10.1016/j.jnucmat.2008.12.089  

    ISSN: 0022-3115

  136. A New Method for Size Estimation of Cu Nano-precipitates in Fe Based on Positron Quantum-dot Confinement Peer-reviewed

    Takeshi Toyama, Yasuyoshi Nagai, Zheng Tang, Koji Inoue, Toshinobu Chiba, Masayuki Hasegawa, Tadakatsu Ohkubo, Kazuhiro Hono

    TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN 95 (2) 118-123 2009/02

    DOI: 10.2355/tetsutohagane.95.118  

    ISSN: 0021-1575

  137. Interlaboratory Comparison of Positron Annihilation Lifetime Measurements Peer-reviewed

    K. Ito, T. Oka, Y. Kobayashi, Y. Shirai, K. Wada, M. Matsumoto, M. Fujinami, T. Hirade, Y. Honda, H. Hosomi, Y. Nagai, K. Inoue, H. Saito, K. Sakaki, K. Sato, A. Shimazu, A. Uedono

    POSITRON AND POSITRONIUM CHEMISTRY 607 248-+ 2009

    DOI: 10.4028/www.scientific.net/MSF.607.248  

    ISSN: 0255-5476

  138. Interlaboratory comparison of positron annihilation lifetime measurements Peer-reviewed

    K. Ito, T. Oka, Y. Kobayashi, Y. Shirai, K. Wada, M. Matsumoto, M. Fujinami, T. Hirade, Y. Honda, H. Hosomi, Y. Nagai, K. Inoue, H. Saito, K. Sakaki, K. Sato, A. Shimazu, A. Uedono

    Mater. Sci. Forum 607 (2) 248-250 2009

    DOI: 10.4028/0-87849-348-4.248  

  139. 3次元アトムプローブによるMOSトランジスタ中のドーパント分布解析 Peer-reviewed

    高見澤悠, 井上耕治, 矢野史子, 西田彰男, 永井康介, 長谷川雅幸

    第29回LSTテスティングシンポジウム会議録 371-375 2009

  140. Size-dependent momentum smearing effect of positron annihilation radiation in embedded nano Cu clusters Peer-reviewed

    Z. Tang, T. Toyama, Y. Nagai, K. Inoue, Z. Q. Zhu, M. Hasegawa

    JOURNAL OF PHYSICS-CONDENSED MATTER 20 (44) 445203-1-5 2008/11

    DOI: 10.1088/0953-8984/20/44/445203  

    ISSN: 0953-8984

  141. Three dimensional characterization of dopant distribution in polycrystalline silicon by atom probe microscopy Peer-reviewed

    K. Inoue, F. Yano, A. Nishida, T. Tsunomura, T. Toyama, Y. Nagai, M. Hasegawa

    Appl. Phys. Lett. 93 (13) 133507-1-3 2008/10

    DOI: 10.1063/1.2995864  

    ISSN: 0003-6951

  142. Interlaboratory comparison of positron annihilation lifetime measurements for synthetic fused silica and polycarbonate Peer-reviewed

    Kenji Ito, Toshitaka Oka, Yoshinori Kobayashi, Yasuharu Shirai, Ken'ichiro Wada, Masataka Matsumoto, Masanori Fujinami, Tetsuya Hirade, Yoshihide Honda, Hiroyuki Hosomi, Yasuyoshi Nagai, Koji Inoue, Haruo Saito, Koji Sakaki, Kiminori Sato, Akira Shimazu, Akira Uedono

    JOURNAL OF APPLIED PHYSICS 104 (2) 026102 2008/07

    DOI: 10.1063/1.2957074  

    ISSN: 0021-8979

    eISSN: 1089-7550

  143. Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique Peer-reviewed

    Koji Inoue, Fumiko Yano, Akio Nishida, Takaaki Tsunomura, Takeshi Toyama, Yasuyoshi Nagai, Masayuki Hasegawa

    APPLIED PHYSICS LETTERS 92 (10) 103506-1-3 2008/03

    DOI: 10.1063/1.2891081  

    ISSN: 0003-6951

  144. The Characterization of MgB2 Thin Film by Slow Positron Annihilation Spectroscopy Peer-reviewed

    C. Y. Lee, W. N. Kang, Y. Nagai, K. Inoue, M. Hasegawa

    J. Korean Vac. Soc. 17 160 2008

  145. Temperature-activated transition of positronium from self-trapped to delocalized state in CaF2 Peer-reviewed

    K. Inoue, N. Suzuki, I. V. Bondarev, T. Hyodo

    PHYSICAL REVIEW B 76 (2) 024304-1-024304-6 2007/07

    DOI: 10.1103/PhysRevB.76.024304  

    ISSN: 1098-0121

  146. Tunnel detrapping of self-trapped positronium in SrF2 single crystal Peer-reviewed

    I. V. Bondarev, K. Inoue, N. Suzuki, T. Hyodo

    Physica Status Solidi (C) Current Topics in Solid State Physics 4 (10) 3867-3870 2007

    DOI: 10.1002/pssc.200675735  

    ISSN: 1862-6351

  147. Annealing behavior of vacancy type defect in electron-irradiated FZ-Si at 77K by positron annihilation

    Y. Nagai, K. Inoue, M. Hatakeyama, J. Yang, T. Toyama, H. Uno, R. Hashitani, T. Yoshiie, Q. Xu

    KUR Progress report 2007 0-0 2007

  148. Tunnel detrapping of self-trapped positronium in SrF2 single crystal Peer-reviewed

    I. V. Bondarev, K. Inoue, N. Suzuki, T. Hyodo

    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 4 (10) 3867-3870 2007

    DOI: 10.1002/pssc.200675735  

    ISSN: 1610-1634

  149. Positronium in a SrF2 single crystal: Temperature-induced transition from the localized to the delocalized state Peer-reviewed

    K Inoue, N Suzuki, T Hyodo

    PHYSICAL REVIEW B 71 (13) 134305 2005/04

    DOI: 10.1103/PhysRevB.71.134305  

    ISSN: 2469-9950

    eISSN: 2469-9969

  150. Self-energy correction to momentum-density distribution of positron-electron pairs Peer-reviewed

    Z Tang, Y Nagai, K Inoue, T Toyama, T Chiba, M Saito, M Hasegawa

    PHYSICAL REVIEW LETTERS 94 (10) 106402 2005/03

    DOI: 10.1103/PhysRevLett.94.106402  

    ISSN: 0031-9007

    eISSN: 1079-7114

  151. Positronium in a SrF2 single crystal: Temperature-induced transition from the localized to the delocalized state Peer-reviewed

    K. Inoue, N. Suzuki, T. Hyodo

    Physical Review B - Condensed Matter and Materials Physics 71 (13) 2005

    DOI: 10.1103/PhysRevB.71.134305  

    ISSN: 1098-0121 1550-235X

  152. Bookmark shared system using agent systems Peer-reviewed

    Y Nagai, K Inoue

    5th International Conference on Intelligent Systems Design and Applications, Proceedings 470-475 2005

  153. Vacancy-solute binding energies in aluminum by positron annihilation Peer-reviewed

    H Ohkubo, Y Nagai, K Inoue, Z Tang, M Hasegawa

    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS 445-6 165-167 2004

    DOI: 10.4028/www.scientific.net/MSF.445-446.165  

    ISSN: 0255-5476

  154. Structural subnanovoids in silica-based glasses probed by positronium Peer-reviewed

    K Inoue, Y Nagai, Y Sasaki, Z Tang, H Ohkubo, M Hasegawa

    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS 445-6 304-306 2004

    DOI: 10.4028/www.scientific.net/MSF.445-446.304  

    ISSN: 0255-5476

  155. Jahn-Teller distortion of neutral divacancy in Si studied by positron annihilation spectroscopy Peer-reviewed

    Y Nagai, K Inoue, Z Tang, Yonenaga, I, T Chiba, M Saito, M Hasegawa

    PHYSICA B-CONDENSED MATTER 340 518-522 2003/12

    DOI: 10.1016/j.physb.2003.09.144  

    ISSN: 0921-4526

  156. Positronium in silica-based glasses Peer-reviewed

    K. Inoue, Y. Sasaki, Y. Nagai, H. Ohkubo, Z, Tang, M. Hasegawa

    Proc. of International Workshop on Positron Studies of Defects in Semiconductors (PSSD-2002), Edited by M. Hasegawa, Z. Tang and Y. Nagai, Sept. 29-Oct. 4, 2002, Sendai, Japan [CD-ROM版] 205-210 2003/10

  157. Positronium in silica-based glasses Peer-reviewed

    Y Sasaki, Y Nagai, H Ohkubo, K Inoue, Z Tang, M Hasegawa

    RADIATION PHYSICS AND CHEMISTRY 68 (3-4) 569-572 2003/10

    DOI: 10.1016/S0969-806X(03)00233-0  

    ISSN: 0969-806X

  158. Ultrafine Cu Precipitates in RPV Model Alloys Studied by Positron Annihilation and 3D Atom Probe

    Y. Nagai, T. Toyama, Z. Tang, H. Ohkubo, K. Inoue, M. Hasegawa

    Proc. of 11th Int. Conf. On “Environmental Degradation of Materials in Nuclear Power Systems - Water Reactors” 103-109 2003

  159. Improvement of the 2D-ACAR apparatus in University of Tokyo Peer-reviewed

    INOUE Koji, SAITO Haruo, NAGASHIMA Yasuyuki, HYODO Toshio, NAGAI Yasuyoshi, MURAMATSU S, NAGAI Shyota, MASUDA K

    Proc. of International Workshop on Positron Studies of Defects in Semiconductors (PSSD-2002), Edited by M. Hasegawa, Z. Tang and Y. Nagai, Sept. 29-Oct. 4, 2002, Sendai, Japan [CD-ROM版] 180-187 2003

  160. 2D-ACAR apparatus installed in Tohoku University Peer-reviewed

    NAGAI Yasuyoshi, INOUE Koji, OHKUBO Hideaki, TANG Zheng, HASEGAWA Masayuki

    Proc. of International Workshop on Positron Studies of Defects in Semiconductors (PSSD-2002), Edited by M. Hasegawa, Z. Tang and Y. Nagai, Sept. 29-Oct. 4, 2002, Sendai, Japan [CD-ROM版] 245-250 2003

  161. A position-sensitive gamma-ray detector for positron annihilation 2D-ACAR based on metal package photomultiplier tubes Peer-reviewed

    K Inoue, H Saito, Y Nagashima, T Hyodo, Y Nagai, S Muramatsu, S Nagai, K Masuda

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 487 (3) 471-476 2002/07

    DOI: 10.1016/S0168-9002(02)00390-X  

    ISSN: 0168-9002

  162. Intense positron beam at KEK Peer-reviewed

    T Kurihara, A Yagishita, A Enomoto, H Kobayashi, T Shidara, A Shirakawa, K Nakahara, H Saitou, K Inoue, Y Nagashima, T Hyodo, Y Nagai, M Hasegawa, Y Inoue, Y Kogure, M Doyama

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 171 (1-2) 164-171 2000/08

    DOI: 10.1016/S0168-583X(00)00074-4  

    ISSN: 0168-583X

  163. Effect of refraction index and thickness of the light guide in the position-sensitive gamma-ray detector using compact PS-PMTs Peer-reviewed

    K Inoue, H Saito, Y Nagashima, T Hyodo, Y Nagai, S Muramatsu, S Nagai

    RADIATION PHYSICS AND CHEMISTRY 58 (5-6) 763-766 2000/06

    DOI: 10.1016/S0969-806X(00)00255-3  

    ISSN: 0969-806X

  164. A position-sensitive scintillation detector for two-dimensional angular correlation of annihilation radiation using metal-package position-sensitive photomultiplier tubes Peer-reviewed

    K Inoue, Y Nagai, H Saito, Y Nagashima, T Hyodo, S Muramatsu, S Nagai

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 423 (2-3) 364-368 1999/03

    DOI: 10.1016/S0168-9002(98)01266-2  

    ISSN: 0168-9002

  165. 2D-ACAR Apparatus Combined with Slow Positron Beam in KEK

    Y. Nagai, T. Shimamura, M. Hasegawa, H. Saito, K. Inoue, T. Hyodo, T. Kurihara, T. Shidara, K. Nakahara, A. Shirakawa, AQ. Enomoto, H. Kobayashi, A. Yagishita

    Proceedings of the International Workshop on AdvancedTechniques of Positron Beam Generation and Control 22-26 1998/01

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  3. Formation of fine YSZ particles in Zr-added ODS-Cu

    齋藤隼輝, YU Hao, 井上耕治, GAO Zimo, 近藤創介, 笠田竜太, 永井康介

    日本金属学会東北支部研究発表大会予稿集 21st (Web) 2022

  4. In-situ TEM observation of diffusion enhancement by point defects induced by electron irradiation in the FeSi-D03 lattice

    嶋田雄介, CHEN J., 池田裕樹, 吉田健太, 井上耕治, 今野豊彦, 永井康介

    日本物理学会講演概要集(CD-ROM) 76 (1) 2021

    ISSN: 2189-079X

  5. 球面収差補正透過電子顕微鏡による空孔クラスター由来のAl格子ひずみの定量解析

    CHEN Jiao, 吉田健太, ZHAO Can, 嶋田雄介, 井上耕治, 今野豊彦, 鈴土知明, 永井康介

    日本物理学会講演概要集(CD-ROM) 76 (2) 2021

    ISSN: 2189-079X

  6. Influence on Fe atom diffusion of electron irradiation dose in the FeSi ordered alloy

    嶋田雄介, CHEN J., 池田裕樹, 吉田健太, 井上耕治, MAASS Robert, 今野豊彦, 永井康介

    日本物理学会講演概要集(CD-ROM) 76 (2) 2021

    ISSN: 2189-079X

  7. In-situ WB-STEM Study of Annealing Process of Neutron Irradiation Induced Dislocation Loops

    吉田健太, DU Yufeng, 嶋田雄介, 鈴土知明, 荒河一渡, 外山健, 井上耕治, 大貫聡明, 永井康介

    日本原子力学会春の年会予稿集(CD-ROM) 2020 2020

  8. 照射誘起転位ループの熱的安定性のその場WB-STEM計測

    吉田健太, YUFENG D., 嶋田雄介, 鈴土知明, 荒河一渡, 外山健, 井上耕治, 大貫聡明, 永井康介

    日本物理学会講演概要集(CD-ROM) 75 (1) 2020

    ISSN: 2189-079X

  9. In-situ WB-STEM evaluation of thermal stability of the neutron induced dislocation loops during post-irradiation-annealing

    吉田健太, DU Yufeng, 嶋田雄介, 鈴土知明, 荒河一渡, 外山健, 井上耕治, 大貫聡明, 永井康介

    日本原子力学会秋の大会予稿集(CD-ROM) 2020 2020

  10. その場WB-STEM計測による中性子照射誘起転位ループの熱的安定性の評価

    吉田健太, YUFENG D., 嶋田雄介, 鈴土知明, 荒河一渡, 外山健, 井上耕治, 大貫聡明, 永井康介

    日本物理学会講演概要集(CD-ROM) 75 (2) 2020

    ISSN: 2189-079X

  11. 多結晶フェライト鋼のひずみ時効現象における固溶Cと結晶粒界の役割

    小野義彦, 船川義正, 奥田金晴, 瀬戸一洋, 海老澤直樹, 井上耕治, 永井康介

    鉄と鋼 105 (4) 452-461 2019/04

  12. その場WB-STEM法による照射誘起転位ループ焼鈍過程の定量解析

    吉田健太, YUFENG D., 嶋田雄介, 荒河一渡, 外山健, 井上耕治, KONSTANTINOVICH Milan, GERARD Robert, 永井康介

    日本物理学会講演概要集(CD-ROM) 74 (2) 2019

    ISSN: 2189-079X

  13. 球面収差補正透過電子顕微鏡による金属/Si界面反応の原子分解能その場加熱観察

    原田寛大, 嶋田雄介, 吉田健太, 井上耕治, 永井康介, 今野豊彦

    日本金属学会東北支部研究発表大会予稿集 18th 2019

  14. 微量Nbを添加した繊維機械部品用高炭素鋼板の開発

    土屋栄司, 松村雄太, 細谷佳弘, 宮本友佳, 小林崇, 瀬戸一洋, 戸村恵子, 井上耕治, 永井康介

    鉄と鋼 105 (1) 76-85 2019/01

  15. 陽電子消滅法で調べたタングステン中の照射欠陥への重水素捕獲

    外山健, 網恭平, 佐藤紘一, Xu Qiu, 井上耕治, 永井康介, 波多野雄治

    陽電子科学 12 23-30 2019

  16. Contribution of irradiation-induced defects to hardening of a low-copper reactor pressure vessel steel Peer-reviewed

    Masaki Shimodaira, Takeshi Toyama, Kenta Yoshida, Koji Inoue, Naoki Ebisawa, Keiko Tomura, Toshimasa Yoshiie, Milan J. Konstantinovic, Robert Gerard, Yasuyoshi Nagai

    ACTA MATERIALIA 155 402-409 2018/08

    DOI: 10.1016/j.actamat.2018.06.015  

    ISSN: 1359-6454

    eISSN: 1873-2453

  17. 透過電子顕微鏡内加熱ホルダーを用いたその場観察における試料中温度分布の影響

    池田裕樹, 嶋田雄介, 吉田健太, 井上耕治, 永井康介, 今野豊彦

    日本金属学会講演概要(CD-ROM) 163rd 2018

    ISSN: 2433-3093

  18. ヒーター式その場加熱観察手法のSTEMへの適用

    嶋田雄介, 吉田健太, 井上耕治, 白石貴久, 木口賢紀, 永井康介, 今野豊彦

    日本金属学会講演概要(CD-ROM) 163rd 2018

    ISSN: 2433-3093

  19. ケイ酸塩ガラス中でのアルミニウムイオンの化学状態

    助永壮平, Kyung-Ho Kim, 遠藤貴彦, 柴田浩幸, 吉田慎一郎, 安東真理子, 井上耕治, 永井康介, 脇原徹, 山田大貴, 尾原幸治, 金橋康二

    日本学術振興会製鋼第19委員会 提出資料 1-17 2018/01

  20. 陽電子消滅2光子角相関法

    井上耕治, 永井康介

    陽電子科学 11 11-24 2018

  21. アトムプローブによるCVD薄膜中の合金原子組成分析

    金泰雄, 百瀬健, 出浦桃子, YUAN Tu, 清水康雄, 外山健, 井上耕治, 永井康介, 霜垣幸浩

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 34 2017

  22. 原子炉圧力容器材料の焼鈍過程を解明にするためのIn situ WB-STEM法の開発

    吉田健太, 下平昌樹, 外山健, 嶋田雄介, 井上耕治, 張磊, 鈴木克弥, 海老澤直樹, 永井康介

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 34 2017

  23. ヒーター式加熱による原子分解能その場加熱観察

    嶋田雄介, 吉田健太, 井上耕治, 白石貴久, 木口賢紀, 永井康介, 今野豊彦

    日本金属学会講演概要(CD-ROM) 161st 2017

    ISSN: 2433-3093

  24. 3次元アトムプローブ法によるGe中のドーパント分布評価

    澤野憲太郎, 池上和彦, 山田道洋, 清水康雄, 韓斌, と えん, 井上耕治, 永井康介

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 33 68‐69 2016

  25. アトムプローブによるCVD薄膜中の合金原子組成分析

    金泰雄, YUAN Tu, 嶋紘平, 韓斌, 清水康雄, 百瀬健, 外山健, 井上耕治, 永井康介, 霜垣幸浩

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 33 13‐14 2016

  26. PデルタドープしたGe基板の3次元アトムプローブ評価

    清水康雄, 山田道洋, HAN Bin, TU Yuan, 澤野憲太郎, 植松真司, 伊藤公平, 井上耕治, 永井康介

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th ROMBUNNO.13P-2W-6 2015/08/31

  27. Sub-nanoscale Structure and Barrier Performance of CVD-Cu(Mn)/ALD-Co(W) Interconnect System Proved Using 3D Atom Probe

    SHIMA Kohei, TU Yuan, HAN Bin, TAKAMIZAWA Hisashi, SHIMIZU Hideharu, SHIMIZU Yasuo, MOMOSE Takeshi, INOUE Koji, NAGAI Yasuyoshi, SHIMOGAKI Yukihiro

    Technical report of IEICE. SDM 114 (469) 39-44 2015/03/02

    Publisher: The Institute of Electronics, Information and Communication Engineers

    ISSN: 0913-5685

    More details Close

    We propose new materials system of a single layered Co(W) barrier/liner layer coupled with a Cu(Mn) alloy seed layer for reliable ULSI Cu interconnects at 1X nm technology node. The barrier property of Cu(Mn)/Co(W) system was characterized using 3D atom probe. The distributions of W and Mn were visualized with sub-nanoscale resolution in the three dimensions. W was confirmed to segregate at the grain boundaries (GBs) of Co(W) by stuffing the Cu diffusion path, and added Mn diffused out from Cu(Mn) and selectively segregated at the GBs of Co(W),which is expected to reinforce the barrier property of ultra-thin (1〜2 nm) Co(W).

  28. アトムプローブ法によるGe中にデルタドープしたPの3次元分布評価

    澤野憲太郎, 山田道洋, 伊藤公平, 清水康雄, 韓斌, と遠, 井上耕治, 永井康介

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 32 75‐76 2015

  29. 21aCJ-13 Effects of bond distortion on impurity accumulation at Σ9{114} boundary in Si

    Ohno Y, Yoshida H, Takeda S, Tanaka S, Kohyama M, Inoue K, Deura M, Kutsukake K, Yonenaga I, Ebisawa N, Shimizu Y, Inoue K, Nagai Y

    Meeting Abstracts of the Physical Society of Japan 70 (0) 2687-2687 2015

    Publisher: The Physical Society of Japan

    DOI: 10.11316/jpsgaiyo.70.1.0_2687  

    ISSN: 2189-079X

  30. アトムプローブによるCVD薄膜中の合金原子組成分析

    嶋紘平, 韓斌, 清水康雄, 百瀬健, 井上耕治, 永井康介, 霜垣幸浩

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 2014 63-64 2015

  31. アトムプローブによるCVD薄膜中の合金原子組成分析

    金泰雄, TU Yuan, 嶋紘平, 韓斌, 清水康雄, 百瀬健, 外山健, 井上耕治, 永井康介, 霜垣幸浩

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 32 67‐68 2015

  32. 3次元アトムプローブを用いた新規Cu(Mn)/Co(W)配線システムのサブナノ構造の解明とバリヤ性評価

    嶋紘平, TU Y, BIN H, 高見澤悠, 清水秀治, 清水康雄, 百瀬健, 井上耕治, 永井康介, 霜垣幸浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.19P-A19-4 2014/09/01

  33. 8aAE-8 Diffusivity of Cu in A533B steels studied by atom probe tomography

    Nagai Y., Takahama F., Shimodaira M., Toyama T., Shimizu Y., Inoue K.

    Meeting abstracts of the Physical Society of Japan 69 (2) 689-689 2014/08/22

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  34. How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy

    T. Walther, M. Hopkinson, N. Daneu, A. Recnik, Y. Ohno, K. Inoue, I. Yonenaga

    JOURNAL OF MATERIALS SCIENCE 49 (11) 3898-3908 2014/06

    DOI: 10.1007/s10853-013-7932-2  

    ISSN: 0022-2461

    eISSN: 1573-4803

  35. アトムプローブによるCVD薄膜中の合金原子組成分析

    嶋紘平, TU Yuan, 高見澤悠, 清水秀治, 清水康雄, 百瀬健, 井上耕治, 永井康介, 霜垣幸浩

    東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM) 30th ROMBUNNO.I.(3).9 2014/06

  36. Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements

    K. Inoue, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, T. Ohsawa, R. Gotoh, I. Yonenaga

    JOURNAL OF CRYSTAL GROWTH 393 (1) 45-48 2014/05

    DOI: 10.1016/j.jcrysgro.2013.10.033  

    ISSN: 0022-0248

    eISSN: 1873-5002

  37. 28pAM-4 Interaction of dopant atoms with Σ9{114} grain boundaries in Si

    Ohno Y., Inoue K., Ninomiya S., Kutsukake K., Yonenaga I., Ebisawa N., Takamizawa A., Shimizu Y., Inoue K., Nagai Y.

    Meeting abstracts of the Physical Society of Japan 69 (1) 931-931 2014/03/05

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  38. 28pAM-1 Measurements of Diffusion Coefficients of Cu in Fe Using Atom Probe Tomography

    Nagai Y., Takahama F., Shimodaira M., Kuramoto A., Toyama T., Shimizu Y., Inoue K.

    Meeting abstracts of the Physical Society of Japan 69 (1) 930-930 2014/03/05

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  39. Formation of thermal double donors in Ge

    K. Inoue, T. Taishi, Y. Murao, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga

    J. Phys. Soc. Conf. Proc. 1 (1) 012082-1-012082-4 2014

  40. 26pKA-9 Interaction of dopant atoms with Σ3{111} grain boundaries in Si

    Ohno Y., Tokumoto Y., Kutsukake K., Yonenaga I., Ebisawa N., Takamizawa H., Shimizu Y., Inoue K., Nagai Y., Yoshida H., Takeda S.

    Meeting abstracts of the Physical Society of Japan 68 (2) 861-861 2013/08/26

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  41. Measurements of Diffusion Coefficients of Cu in Fe Using Atom Probe Tomography

    Nagai Y., Takahama F., Kuramoto A., Toyama T., Shimizu Y., Inoue K.

    Meeting abstracts of the Physical Society of Japan 68 (2) 866-866 2013/08/26

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  42. Neutron irradiation-induced nanostructural changes in reactor pressure vessel steels of a commercial nuclear power plant studied by three-dimensional atom probe and positron annihilation spectroscopy

    Wakabayashi S., Toyama T., Inoue K., Nagai Y., Almazouzi A., van Walle E., Gerard R.

    Meeting abstracts of the Physical Society of Japan 68 (2) 851-851 2013/08/26

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  43. 26pXS-4 Synchronized long-period stacking ordered structure observed by atom probe tomography

    Inoue Koji

    Meeting abstracts of the Physical Society of Japan 68 (1) 1024-1024 2013/03/26

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  44. 28pXZB-2 VTT Technical Research Centre Matti Valo Radiation Damage and Annealing Behavior in a Pressure Vessel Steel of a VVER-type Reactor

    Nagai Y., Toyama T., Kuramoto A., Nozawa Y., Inoue K., Hasegawa M., Valo Matti

    Meeting abstracts of the Physical Society of Japan 68 (1) 1044-1044 2013/03/26

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  45. Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies

    K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K. Kutsukake, Y. Ohno, M. Suezawa, I. Yonenaga

    JOURNAL OF APPLIED PHYSICS 113 (7) 073501-1-073501-5 2013/02

    DOI: 10.1063/1.4792061  

    ISSN: 0021-8979

  46. Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

    Ichiro Yonenaga, Toshinori Taishi, Hideaki Ise, Yu Murao, Kaihei Inoue, Takayuki Ohsawa, Yuki Tokumoto, Yutaka Ohno, Yoshio Hashimoto

    PHYSICA B-CONDENSED MATTER 407 (15) 2932-2934 2012/08

    DOI: 10.1016/j.physb.2011.08.038  

    ISSN: 0921-4526

  47. Growth of Heavily Indium doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

    Kaihei Inoue, Yuki Tokumoto, Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga

    MATERIALS INTEGRATION 508 220-223 2012

    DOI: 10.4028/www.scientific.net/KEM.508.220  

    ISSN: 1013-9826

  48. Czochralski growth of highly In doped Si -Effect of co-doping of C and Ge-

    K. Inoue, Y. Ohno, K. Kutsukake, Y. Tokumoto, I. Yonenaga

    Proceeding of the 7th International Workshop on Modeling of Crystal Growth (IWMCG-7) (Taihei, Oct. 28-31, 2012) 132-133 2012

  49. 26aWZ-6 Analysis of diffusion of ion-implanted dopant by 3D atom probe and positron annihilation

    Takamizawa H., Shimizu Y., Nagai Y., Toyama T., Inoue K., Yano F., Tsunomura T., Nishida A., Mogami T.

    Meeting abstracts of the Physical Society of Japan 65 (2) 926-926 2010/08/18

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  50. 20pHT-3 Dopant distribution in MOSFET structures observed by laser-assisted three dimensional atom probe tomography

    Inoue Koji

    Meeting abstracts of the Physical Society of Japan 65 (1) 978-978 2010/03/01

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  51. 29pRB-2 Temperature dependence of positron annihilation in neutron-irradiated Fe-Cu and Fe-Cu-Mn model alloys

    Toyama T., Inoue K., Hatakeyama M., Nagai Y., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 64 (1) 961-961 2009/03/03

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  52. 27aRB-3 Annealing behavior of vacancy-type defects in electron-irradiated Si-Ge bulk crystals at low temperature

    Takamizawa H., Takeuchi T., Inoue K., Nagai Y., Hasegawa M., Yonenaga I.

    Meeting abstracts of the Physical Society of Japan 64 (1) 930-930 2009/03/03

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  53. 21aRB-5 Three dimensional observation of grain boundary segregation of dopant atoms in polycrystalline Si gate

    Inoue K., Yano F., Nishida A., Toyama T., Nagai Y., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 63 (2) 866-866 2008/08/25

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  54. 24pYF-13 The arsenic segregation at the interface between gate-oxide and Si substrate in a MOS device by 3D-Atom Probe observation

    Inoue K., Yano F., Nishida A., Toyama T., Nagai Y., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 63 (1) 939-939 2008/02/29

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  55. 24pYF-1 The study of vacancies in electron-irradiated silicon by positron annihilation at low temperature

    Takeuchi Tomoaki, Inoue Koji, Zheng Tang, Nagai Yasuyoshi, Hasegawa Masayuki, Hyodo Toshio

    Meeting abstracts of the Physical Society of Japan 63 (1) 936-936 2008/02/29

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  56. 22pTD-3 Irradiation-induced defects in B_2O_3 glass studied by electron spin resonance and positron annihilation

    Inoue K., Uno H., Takeuchi T., Nagai Y., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 62 (2) 992-992 2007/08/21

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  57. 20aXC-6 Mechanism of positron trapping into the Cu nano-precipitates

    Inoue K., Tsuto A., Toyama T., Nagai Y., Tang Z., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 62 (1) 970-970 2007/02/28

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  58. 20aXC-5 Two-dimensional angular correlation of positron annihilation radiation of positronium in ice

    Takeuchi Tomoaki, Nagai Yasuyoshi, Zheng Tang, Inoue Koji, Toyama Takeshi, Chiba Toshinobu, Hasegawa Masayuki, Saito Haruo, Hyodo Toshio, Eldrup Morten

    Meeting abstracts of the Physical Society of Japan 62 (1) 969-969 2007/02/28

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  59. 25aXB-2 Positron diffusion in Fe and Fe-Cu alloys

    Inoue K., Tsuto A., Toyama T., Nagai Y., Tang Z., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 61 (2) 797-797 2006/08/18

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  60. Irradiation-induced defects in B<inf>2</inf>O<inf>3</inf> glass studied by electron spin resonance spectroscopy

    M. Hasegawa, Y. Nagai, Z. Tang, K. Inoue, M. Hatakeyama, T. Toyama, A. Tsuto, E. Kuramoto, T. Yoshiie

    KURRI Progress Report 110 2006/04

    ISSN: 0919-1038

  61. 27pXD-3 Positron diffusion in Fe and Fe-Cu alloys using slow positron beam

    Inoue Koji, Tsuto Akira, Toyama Takeshi, Nagai Yasuyoshi, Hasegawa Masayuki

    Meeting abstracts of the Physical Society of Japan 61 (1) 925-925 2006/03/04

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  62. 30aXD-6 Two-dimensional angular correlation of positron annihilation radiation of positronium in ice

    Takeuchi Tomoaki, Nagai Yasuyoshi, Tang Zheng, Inoue Koji, Toyama Takeshi, Chiba Toshinobu, Hasegawa Masayuki, Eldrup Morten, Saito Haruo, Hyodo Toshio

    Meeting abstracts of the Physical Society of Japan 61 (1) 960-960 2006/03/04

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  63. 22aYM-1 Quenching of positronium by Fe ions in silica-based glasses.

    Inoue K., Kataoka H., Nagai Y., Tang Z., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 60 (2) 833-833 2005/08/19

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  64. 22aYM-2 Intrinsic Nanovoids in Silica : First-Principles Simulations and Positron Annihilation Studies

    Tang Zheng, Inoue Koji, Nagai Yasuyoshi, Sasaki Fumiko, Hasegawa Masayuki

    Meeting abstracts of the Physical Society of Japan 60 (2) 833-833 2005/08/19

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  65. 26pYS-2 Electronic Structure of Nano-clusters Embedded in Metals Studied by Confined Positrons

    Nagai Y., Tang Z., Inoue K., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 60 (1) 595-595 2005/03/04

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  66. 26pYS-2 Electronic Structure of Nano-clusters Embedded in Metals Studied by Confined Positrons

    Nagai Y., Tang Z., Inoue K., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 60 (1) 925-925 2005/03/04

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  67. 14pTJ-5 Study of structural open volumes in two-component silica-based glasses probed by positronium

    Inoue K., Kataoka H., Nagai Y., Tang Z., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 59 (2) 877-877 2004/08/25

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  68. 14aTJ-9 Fermiology of Embedded Nano-Particles

    Nagai Y., Toyama T., Tang Z., Hasegawa M., Hirosawa S., Sato T.

    Meeting abstracts of the Physical Society of Japan 59 (2) 870-870 2004/08/25

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  69. Effecct of low temperature electron irradiation on an Fe-Cu alloy studied by positron annihilation spectroscopy

    M. Hasegawa, Y. Nagai, Z. Tang, K. Inoue, M. Hatakeyama, T. Toyama, E. Kuramoto, T. Yoshiie

    KURRI Progress Report 43 2004/04

    ISSN: 0919-1038

  70. 28aXT-1 Vacancies and vacancy-impurity complexes in electron-irradiated FZ-Si studied by positron annihilation

    Inoue K., Imai M., Nagai Y., Tang Z., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 59 (1) 960-960 2004/03/03

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  71. Study of structural subnanovoids in silica-based glass probed by positronium

    Inoue K., Nagai Y., Sasaki Y., Ohkubo H., Tang Z., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 58 (2) 865-865 2003/08/15

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  72. Effects of low temperature electron irradiation on AI alloys studied by positron annihilation spectroscopy

    M. Hasegawa, Y. Nagai, Z. Tang, K. Inoue, H. Ohkubo, T. Toyama, M. Imai, T. Yoshiie

    KURRI Progress Report 61 2003/04

    ISSN: 0919-1038

  73. Study of neutral divacancies in Si by positron annihilation 2D-ACAR

    Inoue K., Nagai Y., Imai M., Ohkubo H., Tang Z., Hasegawa M., Yonenaga I., Suezawa M.

    Meeting abstracts of the Physical Society of Japan 58 (1) 932-932 2003/03/06

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  74. Vacancy-Solute complex in Aluminum Using Positron-Annihilation Coincidence Doppler Broadenings

    Ohkubo H., Nagai Y., Inoue K., Tang Z., Hasegawa M.

    Meeting abstracts of the Physical Society of Japan 58 (1) 907-907 2003/03/06

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  75. Analysis of early stage of Cu precipitation in Fe by positron annihilation age-momentum correlation measurements

    Nagai Y., Kitada T., Tang Z., Inoue K., Toyama T., Ohkubo H., Hasegawa M., Yanagita S., Ohkubo T., Hono K.

    Meeting abstracts of the Physical Society of Japan 58 (1) 906-906 2003/03/06

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  76. Al中の空孔-溶質原子結合エネルギーの同時計数ドップラー広がり法による測定 (「陽電子ビームの形成と理工学への応用」専門研究会報告書 平成14年度)

    大窪 秀明, 永井 康介, 井上 耕治

    KURRI-KR (89) 38-44 2002/11/15

    Publisher: 京都大学原子炉実験所

    ISSN: 1342-0852

  77. 陽電子消滅2次元角相関装置を用いたSi中の中性複空孔の研究 (「陽電子ビームの形成と理工学への応用」専門研究会報告書 平成14年度)

    井上 耕治, 永井 康介, 今井 賢

    KURRI-KR (89) 1-9 2002/11/15

    Publisher: 京都大学原子炉実験所

    ISSN: 1342-0852

  78. Fe-Cu合金に関する陽電子消滅と3次元アトムプローブによる研究 (「陽電子ビームの形成と理工学への応用」専門研究会報告書 平成14年度)

    永井 康介, 北田 智史, 井上 耕治

    KURRI-KR (89) 16-18 2002/11/15

    Publisher: 京都大学原子炉実験所

    ISSN: 1342-0852

  79. Positron annihilation.optical absorption and ESR study of various glasses

    Inoue Koji, Sasaki Yuzuru, Nagai Yasuyoshi, Ohkubo Hideaki, Hasegawa Masayuki

    Meeting abstracts of the Physical Society of Japan 57 (2) 812-812 2002/08/13

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  80. Vacancy-Solute Binding Energy in Aluminum Using Positron-Annihilation Coincidence Doppler Broadenings

    Ohkubo H, Nagai Y, Inoue K, Tang Z, Hasegawa M

    Meeting abstracts of the Physical Society of Japan 57 (2) 820-820 2002/08/13

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  81. Development of Two-dimensional Angular Correlation of Positron Annihilation Radiation Apparatus Using Angar Cameras and its Performance

    Nagi Y, Inoue K, Ohkubo H, Tang Z, Hasegawa M

    Meeting abstracts of the Physical Society of Japan 57 (2) 815-815 2002/08/13

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  82. 26pPSA-63 Positronium in alkaline earth fuoridesInstitute of Physics

    Inoue Koji, Suzuki Naoki, Hyodo Toshio

    Meeting abstracts of the Physical Society of Japan 57 (1) 708-708 2002/03/01

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  83. SrF2単結晶中のポジトロニウム--局在-非局在転移について (「陽電子ビームの形成と理工学への応用」専門研究会報告書 平成13年度)

    井上 耕治, 鈴木 直毅, 兵頭 俊夫

    KURRI-KR (76) 52-58 2001/10/11

    Publisher: 京都大学原子炉実験所

    ISSN: 1342-0852

  84. A comparative Study of Angular Correlation of Positron Annihilation Radiation Spectra and Compton Profiles in TiO_2 Single Crystal

    Inoue Koji, Kubo Yasunori, Sakurai Yoshiharu, Itou Masayoshi, Hiraoka Nozomu, Suzuki Naoki, Hyodo Toshio

    Meeting abstracts of the Physical Society of Japan 56 (2) 792-792 2001/09/03

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  85. Positron Annihilation in TiO_2 single crystal (experiment II)

    Inoue Koji, Kubo Yasunori, Suzuki Naoki, Hyodo Toshio

    Meeting abstracts of the Physical Society of Japan 56 (1) 841-841 2001/03/09

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  86. 錯塩[Zn(ptz)6](BF4)2中のポジトロニウムの温度依存性 (「陽電子ビームの形成と理工学への応用」専門研究会報告書 平成12年度)

    斎藤 晴雄, 井上 耕治, 永井 康介

    KURRI-KR (63) 29-31 2000/11/01

    Publisher: 京都大学原子炉実験所

    ISSN: 1342-0852

  87. Positron Annihilation in TiO_2 single crystal

    Inoue Koji, Kubo Yasunori, Hyodo Toshio

    Meeting abstracts of the Physical Society of Japan 55 (2) 836-836 2000/09/10

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  88. 29a-XK-8 An attempt to scale up the PS-PMT based position-sensitive γ-ray detector for 2D-ACAR

    Inoue K, Nagai Y, Saito H, Nagashima Y, Hyodo T, Muramatsu S, Nagai S

    Meeting abstracts of the Physical Society of Japan 54 (1) 742-742 1999/03/15

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  89. 2D-ACAR用の位置敏感γ線検出器の大型化の試み (「陽電子ビームの形成と物質科学への応用」京都大学原子炉実験所専門研究会報告(平成10年))

    井上 耕治, 永井 康介, 斎藤 晴雄

    KURRI-KR (40) 4-6 1998/11

    Publisher: 京都大学原子炉実験所

    ISSN: 1342-0852

  90. Development of a new type of position sensitive γ -ray detector

    INOUE K, NAGAI Y, SAITO H, NAGASHIMA Y, HYODO T

    Meeting abstracts of the Physical Society of Japan 53 (1) 752-752 1998/03/10

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

  91. 29a-A-9 Development of a new type of Position sensitive γ-ray detector

    Inoue K, Nagai Y, Saito H, Nagashima Y, Hyodo T

    Meeting abstracts of the Physical Society of Japan 52 (1) 378-378 1997/03/17

    Publisher: The Physical Society of Japan (JPS)

    ISSN: 1342-8349

Show all ︎Show first 5

Books and Other Publications 2

  1. Single-Atom Nanoelectronics

    Koji Inoue, Yasuyoshi Nagai

    Pan Stanford Publishing 2013/04

  2. 試料分析講座.半導体・電子材料分析(日本分析化学会編)

    井上耕治, 清水康雄, 永井康介

    丸善出版 2013

    ISBN: 9784621087008

Presentations 54

  1. Direct observation of voids decorated with transmuted rhenium atoms in tungsten irradiated by neutrons in the fast neutron experimental reactor Joyo

    Koji INOUE, Taiki YAMASHITA, Akira HASEGAWA, Takeshi TOYAMA, Yasuyoshi NAGAI

    The Japan Institute of Metals and Materials 2023/09/22

  2. 3次元アトムプローブによる極低炭素鋼における転位線および粒界での元素分布の歪時効時間依存性

    井上耕治, 海老澤直樹, 廣田太一, 永井康介, 小野義彦, 船川義正

    日本鉄鋼協会 2017/09/06

  3. 陽電子消滅法を用いた材料中の格子欠陥分析 Invited

    井上 耕治

    第71回若手材料研究会 『格子欠陥研究の最前線』 2017/03/24

  4. 3次元アトムプローブと透過電子顕微鏡を組み合わせたMg-TM-RE系LPSO/OD構造の局所組成分析

    井上耕治, 海老澤直樹, 戸村恵子, 吉田健太, 永井康介, 岸田恭輔, 乾晴行, 伊津野仁史, 萩原幸司, 江草大祐, 阿部英司, 山崎倫昭, 河村能人

    金属学会 2016/03/23

  5. 陽電子消滅とアトムプローブを組み合わせた材料解析

    井上耕治

    物理学会 2016/03/19

  6. Analysis of local chemical composition in Mg-TM-RE alloys with LPSO/OD structure by atom probe tomography International-presentation

    K. Inoue, N. Ebisawa, K. Tomura, K. Yoshida, Y. Nagai, H. X. Xu, D. Egusa, E. Abe, K. Kishida, H. Inui, M. Yamasaki, Y. Kawamura

    The 10th International Conference on Magnesium Alloys and Their Applications 2015/10/11

  7. 3次元アトムプローブによるNi基耐熱合金のクリープ変形における微細組織変化観察

    井上耕治, 野沢康子, 永井康介, 米村光治

    金属学会 2015/09/16

  8. 3次元アトムプローブによるMg-TM-RE系LPSO/OD構造の局所組成分析

    井上耕治, 海老澤直樹, 戸村恵子, 許紅霞, 永井康介

    金属学会 2015/03/18

  9. Atom-Probe-Tomographic Studies on Mg-Zn-Y Alloys with LPSO Phases International-presentation

    K. Inoue, N. Ebisawa, K. Tomura, Y. Nagai, H. X. Xu, D. Egusa, E. Abe

    International Symposium on Long-Period Stacking Ordered Structure and Its Related Materials 2014/10/06

  10. Numerous vacancies induced by β” phase formation in Al-Mg-Si alloys International-presentation

    K. Inoue, Y. Xiao, K. Kazumi, K. Takata, M. Saga, K. Ichitani, Y. Bekki, Y. Shirai

    The International Workshop on Positron Studies of Defects 2014 2014/09/14

  11. Dopant Drive-in Path Analysis in Poly-silicon Filled in Trench type 3D-MOSFET using Atom Probe Tomography International-presentation

    K. Inoue, H. Takamizawa, Y. Shimizu, B. Han, Y. Nagai, F. Yano, Y. Kunimune, M. Inoue, A. Nishida

    International Conference on Solid State Devices and Materials 2014/09/10

  12. Elemental Distribution Analysis in Silicon-Based Semiconductor Devices International-presentation

    K. Inoue

    Atom Probe Tomography & Microscopy 2014 2014/09/03

  13. 3次元アトムプローブによるLPSO型Mg-Zn-Y合金におけるキンク変形境界近傍の元素分析

    井上耕治, 海老澤直樹, 野沢康子, 永井康介, 許紅霞, 江草大祐, 阿部英司

    日本金属学会2014年春期大会 2014/03/23

  14. 多結晶シリコントレンチゲート構造中のドーパント拡散の3次元評価

    高見澤悠, 清水康雄, 井上耕治, 矢野史子, 永井康介, 国宗依信, 井上真雄, 西田彰男, 池田昌弘

    応用物理学会 2014/03/20

  15. 3次元アトムプローブによるLPSO型Mg-Zn-Y合金における積層欠陥と組成分布

    井上耕治, 海老澤直樹, 野沢康子, 外山健, 永井康介, 許紅霞, 江草大祐, 阿部英司

    日本金属学会2013年秋期大会 2013/09/19

  16. Dopant Diffusion in Poly-silicon Filled in Trench Structures Analyzed by Atom Probe Tomography International-presentation

    Koji Inoue, Hisashi Takamizawa, Yasuo Shimizu, Fumiko Yano, Yasuyoshi Nagai, Yorinobu Kunimune, Masao Inoue, Akio Nishida, Masahiro Ikeda

    JSAP-MRS 2013 Fall meeting 2013/09/17

  17. 低温電子線照射したLPSO相MgZnY合金中の空孔回復挙動

    井上耕治, 許紅霞, 海老澤直樹, 永井康介, 江草大祐, 阿部英司

    アイソトープ・放射線研究発表会 2013/07/04

  18. ポリSiゲート中の不純物原子の粒界偏析の3次元観察

    井上耕治, 矢野史子, 西田彰男, 外山健, 永井康介, 長谷川雅幸

    日本物理学会2008年秋季大会 2008/09/20

  19. 3次元アトムプローブによるn-typeとp-type MOSの不純物原子分布の比較

    井上耕治, 矢野史子, 西田彰男, 角村貴昭, 外山健, 永井康介, 長谷川雅幸

    2008年秋季第69回応用物理学会学術講演会 2008/09/02

  20. 3次元アトムプローブによるMOSFET構造中の不純物評価

    井上耕治, 矢野史子, 西田彰男, 外山健, 永井康介, 長谷川雅幸

    2008年春季 第55回応用物理学関係連合講演会 2008/03/27

  21. MOSトランジスタ構造の3次元アトムプローブ観察

    井上耕治, 矢野史子, 西田彰男, 外山健, 永井康介, 長谷川雅幸

    日本金属学会2008年春期講演大会 2008/03/26

  22. 3次元アトムプローブによるゲート酸化膜/シリコン基板界面へのAs原子偏析の観察

    井上耕治, 矢野史子, 西田彰男, 外山健, 永井康介, 長谷川雅幸

    日本物理学会第63回年次大会 2008/03/22

  23. 電子スピン共鳴および陽電子消滅法による硼酸ガラス中の照射欠陥

    井上耕治, 宇野弘倫, 武内伴照, 永井康介, 長谷川雅幸

    日本物理学会 第62年次大会 2007/09/21

  24. Fe-Cuモデル合金中のCuナノ析出物極初期段階における数密度評価

    井上耕治, 津戸昭良, 外山健, 永井康介, 唐政, 長谷川雅幸

    第44回アイソトープ・放射線研究発表会 2007/07/04

  25. 陽電子消滅法による Fe-Cu モデル合金中の Cu ナノ析出物極初期段階における数密度評価

    井上耕治, 津戸昭良, 外山健, 永井康介, 唐政, 長谷川雅幸

    日本金属学会2007年春期大会 2007/03/27

  26. Fe中のCuナノ析出物への陽電子捕獲機構

    井上耕治, 津戸昭良, 外山健, 永井康介, 唐政, 長谷川雅幸

    日本物理学会2007年春季大会 2007/03/17

  27. Fe-Cu合金中の陽電子拡散係数-Cu濃度および測定温度依存性-

    井上耕治, 津戸昭良, 外山健, 永井康介, 唐政, 長谷川雅幸

    日本物理学会2006年秋季大会 2006/09/23

  28. Positron trapping rate into Cu nanoprecipitates by positron annihilation age-momentum correlation technique International-presentation

    K. Inoue, Y. Nagai, Y. Hosoda, A. Tsuto, M. Hasegawa

    The 14th International Conference on Positron Annihilation 2006/07/23

  29. Structural subnanovoids in silica-based model glasses International-presentation

    K. Inoue, H. Kataoka, Y. Nagai, Z. Tang, M. Hasegawa

    The 14th International Conference on Positron Annihilation 2006/07/23

  30. 低速陽電子ビーム装置を用いたFeおよびFe-Cu合金中の陽電子拡散係数測定

    井上耕治, 津戸昭良, 外山健, 永井康介, 長谷川雅幸

    日本物理学会第61回年次大会 2006/03/27

  31. シリカ基モデルガラス中のポジトロニウムに対する鉄イオンのクエンチング効果

    井上耕治, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    京都大学原子炉実験所専門研究会「陽電子科学とその理工学への応用」 2005/11/21

  32. シリカ基モデルガラス中におけるポジトロニウムに対する鉄イオンのクエンチング効果

    井上耕治, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    日本物理学会2005年秋季大会 2005/09/21

  33. Chemical Quenching of Positronium by Fe Ions in Silica-Based glasses:2D-ACAR and Positronium Lifetime International-presentation

    K. Inoue, H. Kataoka, Y. Nagai, Z. Tang, M. Hasegawa

    8th International Workshop on Positron and Positronium Chemistry (PPC-8) 2005/09/04

  34. ポジトロニウムで調べたシリカ基を中心とする各種モデルガラス中の構造空隙

    井上耕治, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    第42回アイソトープ・放射線研究発表会 2005/07/06

  35. ポジトロニウムによって調べたガラス中の構造空隙(II):シリカ基を中心とする各種モデルガラス

    井上耕治, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    日本金属学会2005年春期大会 2005/03/29

  36. ポジトロニウムで調べたSiO2其成分系ガラス中の構造空隙

    井上耕治, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    日本物理学会第60回2005年次大会 2005/03/24

  37. Temperature Induced Transition of Positronium from the Localized to the Delocalized State

    K. Inoue, N. Suzuki, T. Hyodo

    第15回光物性研究会 2004/12/03

  38. ポジトロニウムによって調べたSiO2基2成分系ガラス中の構造空隙

    井上耕治, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    京都大学原子炉実験所専門研究会「陽電子科学とその理工学への応用」 2004/11/26

  39. Vacancy Clusters and Vacancy-Impurity Complexes in Electron-Irradiated Si Positron Annihilation, Electron Spin Resonance and Hall Coefficient Measurement International-presentation

    K. Inoue, M. Imai, Y. Nagai, Z. Tang, M. Hasegawa

    The 4th International Workshop on Positron Studies of Semiconductor Defects (PSSD-2004) 2004/11/07

  40. Positronium studies of structural open volumes in two-component silica-based glasses International-presentation

    K. Inoue, H. Kataoka, Y. Nagai, Z. Tang, M. Hasegawa

    The 4th International Workshop on Positron Studies of Semiconductor Defects (PSSD-2004) 2004/11/07

  41. 東北大金研大洗センターの低速陽電子ビーム装置について

    井上耕治, 細田裕司, 片岡弘康, 外山健, 永井康介, 長谷川雅幸

    日本金属学会2004年秋期大会 2004/09/28

  42. ポジトロニウムで調べたSiO2基2成分系ガラス中の構造空隙

    井上耕治, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    日本物理学会2004年秋季大会 2004/09/12

  43. 電子線照射したP添加FZ-Si中の空孔型欠陥の研究

    井上耕治, 今井賢, 片岡弘康, 永井康介, 唐政, 長谷川雅幸

    第41回理工学における同位元素・放射線研究発表会 2004/07/07

  44. 陽電子消滅法による電子線照射Si中の空孔型欠陥の研究―電子線照射したFZ-SiのPの添加効果について―

    井上耕治, 今井賢, 永井康介, 唐政, 長谷川雅幸

    日本物理学会2004年第59回年次大会 2004/03/27

  45. ポジトロニウムをプローブとしたシリカ基ガラスの構造的空隙の測定

    井上耕治, 永井康介, 佐々木譲, 大窪秀明, 唐政, 長谷川雅幸

    日本物理学会2003年秋期大会 2003/09/20

  46. 2D-ACAR Study of Divacancy in Si: Jahn Teller Effect International-presentation

    K. Inoue, Y. Nagai, Z. Tang, I. Yonenaga, M. Imai, H. Ohkubo, M. Saito, N. Suezawa, M. Hasegawa

    (ICPA-13) 13th International Conference on Positron Annihilation 2003/09/07

  47. Si中の中性複空孔のヤン・テラー効果

    井上耕治, 永井康介, 今井賢, 大窪秀明, 唐政, 長谷川雅幸, 米永一郎, 末沢正志

    第40回理工学における同位元素・放射線研究発表会 2003/07/09

  48. 陽電子消滅2次元角相関法によるSi中性複空孔のヤン・テラー効果の研究

    井上耕治, 永井康介, 今井賢, 大窪秀明, 唐政, 長谷川雅幸, 米永一郎, 末沢正志

    日本物理学会2000年第58回年次大会 2003/03/28

  49. 陽電子消滅2次元角相関法を用いたシリコン中性複空孔のヤン・テラー効果の研究

    井上耕治, 永井康介, 今井賢, 大窪秀明, 唐政, 長谷川雅幸, 米永一郎, 末沢正志

    日本金属学会2003年春期(第132回)大会 2003/03/27

  50. 陽電子消滅2次元角相関装置を用いたSi中の中性複空孔の研究

    井上耕治, 永井康介, 今井賢, 大窪秀明, 唐政, 長谷川雅幸, 米永一郎, 末沢正志

    京都大学原子炉実験所専門研究会「陽電子ビームの形成と物質科学への応用」 2002/11/15

  51. 東北大金研における陽電子消滅2次元角相関装置の製作と性能評価

    井上耕治, 永井康介, 大窪秀明, 唐政, 長谷川雅幸

    日本金属学会2002年秋期(第131回)大会 2002/11/02

  52. Defects in vitreous SiO2 studied by positron annihilation, ESR, and optical absorption International-presentation

    K. Inoue, Y. Nagai, Z. Tang, Y. Sasaki, M. Hasegawa

    The 3rdInternational Workshop on Positron Studies of Semiconductor Defects 2002/09/29

  53. Improvement of the 2D-ACAR apparatus in University of Tokyo International-presentation

    K. Inoue, H. Saito, Y. Nagashima, T. Hyodo, Y. Nagai, S. Muramatsu, S. Nagai, K. Masuda

    The 3rdInternational Workshop on Positron Studies of Semiconductor Defects 2002/09/29

  54. 石英ガラスおよび各種ガラスの陽電子消滅、光吸収、ESR測定

    井上耕治, 佐々木譲, 永井康介, 大窪秀明, 長谷川雅幸

    日本物理学会 2002年秋期大会 2002/09/06

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Industrial Property Rights 1

  1. パーライト組織を含む鋼材の陽電子消滅法を用いた評価方法

    白井 泰治, 井上 耕治, 清水 健一, 高村 伸栄

    Property Type: Patent

Research Projects 24

  1. LPSO-Mg合金中の局所組成解析 Competitive

    System: Grant-in-Aid for Scientific Research

    2012/04 - Present

  2. 鉄鋼材料中の組織観察および3次元元素分布解析 Competitive

    System: The Other Research Programs

    2012/04 - Present

  3. 3D analysis of dopant distribution in semiconductor devices Competitive

    System: The Other Research Programs

    2007/04 - Present

  4. Elucidation of mechanism of segregation of solute atom to dislocations

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: Tohoku University

    2021/04/01 - 2024/03/31

  5. サブナノ分解能応力下その場観察法の開拓による新たな照射硬化機構の解明

    永井 康介, 吉田 健太, 嶋田 雄介, 井上 耕治, 外山 健, 鈴土 知明, 清水 康雄

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(A)

    Institution: 東北大学

    2020/04/01 - 2023/03/31

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    応力印加下その場観察のためのデバイス作製のため、ビッカース試験機による圧痕導入、FIBマイクロサンプリング、その場焼鈍などの実験工程を確立した。外部応力によって導入された残留ひずみの微視的構造およびその熱緩和過程が明らかになってきた。低合金鋼で得られた初期データは学会発表を行い、論文投稿準備を進めた。 <BR> その場等温焼鈍は、F82H鋼およびLAF 9Cr-W鋼、ODS鋼の中性子照射材に適用した。F82H鋼では、中性子照射材とイオン照射材に硬さ試験、3D-AP計測を実施し、室温から525℃まで、その場WB-STEM焼鈍実験により転位ループなど照射欠陥集合体の熱的安定性を評価した。それにより、従来の静的な照射欠陥分析では分からなかった照射欠陥集合体-転位複合体の形成など照射脆化機構における新しい素過程が見つかった。ODS鋼 中性子照射材は、600℃まで焼鈍試験を行い高い耐照射損傷特性の原因である酸化物粒子の構造安定性を評価した。

  6. ハイエントロピー合金に内在する元素間相互作用と相安定性原理の実験的解明

    古原 忠, 荒木 秀樹, 杉山 和正, 井上 耕治

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 新学術領域研究(研究領域提案型)

    Institution: 東北大学

    2018/06/29 - 2023/03/31

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    本年度は、以下の分担項目において検討を行った。 Fe-35Ni-10Cr合金の窒化材を調査し,極めて高い窒素濃度と表面硬さが得られることならびに,固溶体中に存在するナノスケールのCr-Nクラスターが発達すことをTEMならびに3DAP解析により明確に示した.さらに,同程度のN濃度を有するFe-N合金の数倍の硬度を有することから,Cr-Nクラスターは硬化に対しても有効であることを示した. 結晶質・非晶質を問わず,様々な試料に関して含有される元素を分別しその局所構造や短配位置規則性を解明する方法論として異常散乱法を駆使した研究を展開し,継続して構造解析方法としての異常散乱法の実現と高精度化を目指し,物質構造科学研究所に設置の装置の整備も進めてきた.本年度末には,本領域で購入整備した実験室系で活躍する装置の放射光セットの設置が完了する計画である. CrCoNiミディアムエントロピー合金の双晶界面への溶質原子の偏析について3次元アトムプローブ(APT)とTEMを組み合わせた手法により調査し,TEM像での双晶界面に対応する位置で、元素マップ上でCrが欠乏し、わずかにCoとNiが濃くなる偏析現象を見出した. AlxCrFeCoNi合金について、電子線照射により導入した空孔の回復挙動を陽電子寿命法により調べた結果、Al0.1CrFeCoNi、Al0.3CrFeCoNi合金における空孔移動エネルギーはそれぞれ0.62 eV、0.59 eVとなった。CrMnFeCoNi合金における値0.93 eVと比較するとAl添加により空孔移動エネルギーが顕著に減少する傾向が見られた。また、空孔形成エネルギーについて第一原理計算により調べた結果、Al添加により各原子種の空孔形成エネルギーは低下する傾向が見られた。これらのAl添加の影響は、Al添加に伴う各原子種の平均二乗変位の増加に加え、近接原子との結合力の低下が影響していると考えられる.

  7. Development of single dopant circuit by deterministic doping and application to stochastic processing

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2018/04/01 - 2023/03/31

  8. Study of Radiation Damage Mechanisms of Structural Materials in Nuclear Reactors by Defect structure - Elemental distribution Tomography

    Nagai Yasuyoshi, SUZUDO tomoaki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2016/04/01 - 2019/03/31

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    “Defect structure - Elemental distribution Tomography”, method to map irradiation-induced fine defects structures obtained by transmission electron microscopy (TEM) and inhomogeneous elemental distribution obtained by 3D atom probe (3D-AP) in the same 3D real space with sub-nm special resolution, has been successfully developed. Using this new method, we have found unsolved degradation mechanisms of the structural materials of nuclear reactors, which is very important for the safety operation. For example, the fine dislocation loops formed in reactor pressure vessel steels are one of the main origins of the embrittlement by the long term neutron irradiation, similar revel to the well-known contribution of the solute clusters.

  9. Establishment of analysis of single nanowire by atom probe tomography in combination with transmission electron microscopy

    Shimizu Yasuo, FUKATA Naoki, INOUE Koji, NAGAI Yasuyoshi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Young Scientists (A)

    Institution: Tohoku University

    2015/04/01 - 2018/03/31

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    A study of nanowire has been attracting much interest as a future gate-all-around quantum device in the state-of-the-art research. In order to understand the influence of crystal defects induced during growth on electrical property, the relationship between the dopants and defects needs to be clarified. In this study, atom probe tomography combined with transmission electron microscopy for obtaining dopant and defect distributions, respectively, in real space in a core-shall nanowire composed of silicon and germanium, was utilized. We have established an effective pick-up method of an arbitrary single nanowire by using a manipulator equipped in focused ion beam apparatus, and mounting on micropost prior to atom probe measurements at a high successful rate. Our experimental strategy can reveal defect distribution and elemental mapping in nanowires, and lead to clear understanding their relationship.

  10. Dopant diffusion paths in polycrystalline silicon gate of three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

    Inoue Koji

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2014/04/01 - 2017/03/31

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    In order to investigate the dopant diffusion path of P and B in n- and p-types polycrystalline(poly-)-Si gates of trench-type three dimensional metal-oxide-semiconductor field-effect transistors, the annealing time dependence of the dopant distribution at 900℃ were analyzed by atom probe tomography. Remarkable differences between P and B diffusion behavior were observed. P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type poly-Si gate. With longer annealing times, segregation of P on the grain boundaries was clearly observed. These results show that P atoms diffuse along grain boundaries much faster than through the bulk. On the other hand, in the p-type poly-Si gate, segregation of B was observed only at the initial stage of diffusion. After further annealing, the B atoms became uniformly distributed, and no clear segregation of B was observed. Therefore, B atoms diffuse not only along the grain boundary but also through the bulk.

  11. Control of quantum material properties by deterministic doping method

    Shinada Takahiro, TABE Michiharu, ISOYA Junichi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    2013/04/01 - 2017/03/31

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    The first purpose of this study was to establish a deterministic doping method that realizes doping to regions of 10 nm or less and is applicable to next generation devices.The second purpose was to control physical properties of quantum devices including single dopant silicon devices and single silicon - vacancy diamond devices. Specifically, we have developed (1) a single dopant doping process module in the region of 10 nm or less. We succeeded in observation and control of (2) quantum transport in single dopant silicon devices and (3) luminescence from single dopant silicon - vacancy in diamonds. Establishment of the deterministic doping method contributing to the future extension of CMOS technology and realization of its quantum physical property control are major achievements.

  12. アトムプローブ法によるLPSO濃化元素のMg中における拡散係数測定

    井上 耕治

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 新学術領域研究(研究領域提案型)

    Institution: 東北大学

    2014/04/01 - 2016/03/31

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    本研究では、シンクロ型LPSO構造を持つMg合金の代表例としてMg-Zn-Yの合金を念頭におき、Mg中のZn、Yの拡散係数を最新のレーザーパルス局所電極型アトムプローブを用いて求める。具体的な研究の流れは以下の通りである。1、拡散対試料の作製。2、アトムプローブ用試料作製:アトムプローブ測定試料形状は先端が数十nmの細い針状である。蒸着したZnやYとMgの界面部分を針の先端領域にもってくる必要がある。この作業は集束イオンビーム加工装置(FIB)に具備されている走査型電子顕微鏡(SEM)観察しながら針加工を実施する。SEMで確認しながら、界面が針状試料の先端から50~100 nm程度内に含まれるように試料を作製する。3、アトムプローブ測定条件の最適化:測定データのS/N比はアトムプローブの測定条件(測定温度、レーザーパワー)によって大きく左右されるため、測定条件の検討を繰り返し行い、S/N比を向上させる。4、Mg中のZn、Yの粒内拡散係数の決定:アトムプローブ測定によってアトムマップ取得し、アトムマップから求めた濃度分布から、粒内の拡散係数を求める。 上記1、2、3、4、までの一通りの実験作業行い、拡散対試料作製部分以外はうまくいくことが確認できた。拡散対試料作製に関しては、電解研磨でMg表面処理を行っても、すぐに表面が酸化してしまい、アトムプローブ測定で、薄い表面酸化膜層が検出された。また劈開することで酸化膜のない表面を得ようと試みたが、液体窒素温度ではMgは脆性破壊しないことがわかった。今年度、蒸着チェンバー内でArスパッタ装置を導入することで、表面酸化膜を除去し、その場で蒸着しようとしたが、密着性に問題があった。電子ビーム溶解ではなくスパッタリングで蒸着を行った結果、密着性のよい拡散対試料が作製でき、アトムマップを得ることができ、拡散プロファイルを得ることができた。

  13. Three-dimensional nanoscale elemental analysis in human teeth by atom probe tomography towards their soundness evaluation

    SHIMIZU Yasuo, SADR Alireza, NAGAI Yasuyoshi, INOUE Koji

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Challenging Exploratory Research

    Institution: Tohoku University

    2014/04/01 - 2016/03/31

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    In this study, three-dimensional (3D) elemental distribution in human teeth with nanoscale was investigated by utilizing 3D atom probe (3D-AP), which was conventionally applicable to metals and inorganic materials. First, the shape of needle specimen of hydroxyapatite (HAp) crystals for 3D-AP analysis was optimized by means of a focused ion beam technique. After determining a proper condition of 3D-AP equipped with an ultraviolet pulsed laser for HAp, we could apply it for a human tooth (enamel and dentin regions) in order to obtain the elemental distribution. By performing a detailed analysis in 3D, clear segregation and clustering of magnesium in the enamel region were found.

  14. Atomic-resolution structure analysis of LPSO structures to explore the structure-property relationships

    INUI HARUYUKI, NAGAI Yasuyoshi, ABE Eiji, KISHIDA Kyosuke, INOUE Koji

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Institution: Kyoto University

    2011/04/01 - 2016/03/31

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    Crystal structures of LPSO phases in the Mg-Al-Gd and Mg-Zn-Y systems have been determined by atomic-level structural analysis. The enrichment of Gd and Al (Zn and Y) atoms in LPSO phases in the Mg-Al-Gd (Mg-Zn-Y) system occurs in the four consecutive close-packed atomic layers by forming atomic clusters with the atomic arrangement of the L12-type. The in-plane arrangement of these L12 clusters is ordered for LPSO phases in the Mg-Al-Gd system, while for LPSO phases in the Mg-Zn-Y system, it changes from disordered to ordered as the Zn, Y concentration increases. These crystal structures based on the stacking of structural blocks containing the four-consecutive atomic layers enriched with Gd and Al (Zn and Y) atoms can be described crystallographically as order-disorder structures. Many polytypes can be formed depending on the number of atomic layers of structural blocks, and simplest stacking structures and their space groups can be assigned for each of them.

  15. "Transformation - Induced Vacancy" - A New Vacancy Formation Mechanism and Its Function in Materials -

    SHIRAI Yasuharu, INOUE Koji, SUGITA Kazuki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Kyoto University

    2012/05/31 - 2015/03/31

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    In order to prove the vacancy formation by phase transformation, positron annihilation techniques were applied to detect the vacancy formation for aging of aluminum alloys and for internal oxidation process of silver alloys. It was shown that vacancies are introduced during the the precipitation of β”phase in aged aluminum alloys, and in case of oxidized silver alloys vacancy and vacancy-clusters are formed during internal oxidation. These results support the new vacancy formation mechanism by phase transformation.

  16. Atomic scale observation of grain boundary segregation in nuclear materials by atom probe tomography and study on mechanism of grain boundary degradation

    NAGAI Yasuyoshi, INOUE Koji, TOYAMA Takeshi, SHIMIZU Yasuo, NAGUMO Kazuaki, NISHIYAMA Yuataka, KATSUYAMA Jinya

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2012/04/01 - 2015/03/31

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    We have studied the microstructural changes of the structural materials of the nuclear reactors, which are very important for the integrity of the reactors, exposed by long-term neutron irradiation followed by the unexpected temperature rise above 450oC by using state-of-the-art nanoscale techniques, and have revealed the effects on the mechanical properties. The obtained results showed the different behavior in the irradiated materials from that in un-irradiated materials after the high temperature exposure. For example, the coarsening of irradiation induced Cu-rich precipitates in surveillance specimens of a rector pressure vessel are observed. The complementary theoretical calculation revealed the relationship between the microstructural changes and mechanical property changes.

  17. Creep degradation assessment for creep-strength-enhanced ferritic steels by positron annihilation spectroscopy

    INOUE Koji

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Young Scientists (B)

    Institution: Tohoku University

    2012/04/01 - 2014/03/31

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    Creep degradation of creep-strength-enhanced ferritic steels was studied by positron lifetime spectroscopy. Creep time dependence of mean positron lifetime consists of three regions that are decrease in initial stage, gradual decrease in middle stage, and large decrease before rupture. These regions almost correspond to transient, steady-state, and accelerating regions, respectively. Furthermore, increase of the mean positron lifetime in the initial creep time from that before creep test corresponds to formation of precipitates during the creep test in the steels. Creep life assessment by the mean positron lifetime is demonstrated.

  18. High-k gate dielectrics investigated by laser-assisted three dimensional atom probe tomography

    INOUE Koji

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Young Scientists (B)

    Institution: Tohoku University

    2008 - 2009

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    The dopant distributions and high-k gate dielectrics in metal-oxide-semiconductor field effect transistor structure were analyzed by three dimensional atom probe tomography. The remarkable difference of dopant distribution between n-MOSFET and p-MOSFET was clearly observed. Futher investigations are needed for the high-k gate dielectrics structures obtained by three dimensional atom probe tomography.

  19. Clarification of Embrittlement and Degradation Mechanisms of NuclearSteel Materials by Advanced Nano-Materials Science for Control and Prediction of theMaterials Integrity

    HASEGAWA Masayuki, NAGAI Yasuyoshi, HATAKEYAMA Masahiko, TOYAMA Takeshi, MATSUKAWA Yoshitaka

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Specially Promoted Research

    Institution: Tohoku University

    2005 - 2009

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    Combined using advanced positron annihilation and atom probe methods, we have revealed detailed formation and evolution of nanostructures, such as impurity-solute clusters of Cu and MnNiSi, defects and impurity segregation at grain boundaries, in nuclear reactor pressure vessels (RPVs) during long-term irradiation to clarify mechanisms of irradiation-induced degradation (embrittlement) of RPVs. Based on them we have discussed changes in the mechanical properties and make a suggestion about control and prediction of the irradiation-induced degradation.

  20. Positronium Study of Structural Nanovoids in Model Glasses

    INOUE Koji, NAGAI Yasuyoshi, HATAKEYAMA Masahiko

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (C)

    Institution: Tohoku University

    2006 - 2007

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    High-level radioactive nuclear waste is are immobilised by mixing it with glass to be stored safely for a long time more than 1000 years. These radioactive nuclides are confined in the intrinsic structural nanovoids of the radioactive waste glasses (RWG), usually SiO_2-B2O_3 based glasses. Thus it is very important to study haw the nanovoids are occupied by the radioactive nuclide atoms (ions) and stable under the irradiation environment during the long-term storage. Many kinds of SiO_2 based model glasses were prepared. We employed two independent experimental methods of positronium (Ps) formed in the nanovoids to obtain average radius of the nanovoids, the average radii are obtained from pick off annihilation hSetime of Ps using Tao-Eldrup-Nakanishi-Wang-Jean model and from two-dimensional angular correlation of positron annihilation (2D-ACAR) momentum distribution using a zero-point bubbles model. In SiO_2 based model glasses, the average radii from the two experiments agree well with each other except fix slightly smaller radii from the pick-off lifetimes in the glasses containing Fe impurities. The average radius of the nanovoids decreases rapidly with increasing the mole fraction of the doped oxides which belong to the network modifiers (Li, Na and K)because the cation of the oxides occupy nanovoids in the order of the size of them The radius show sluggish and linear change with the fraction. Of the network loaner oxides (B_2O_3, Al_2O_3), which exhibits that the network firmer oxides are incorporated at the glass structural. Networks but not within nanovoids. These findings give us useful into oration on the structural nanovoids and suggest a promising tool for the study of the stability of the RWG during the long-term storage.

  21. 原子炉圧力容器鋼中の照射誘起ナノ析出物および欠陥の形成・発達過程の解明と制御

    長谷川 雅幸, 永井 康介, 唐 政, 井上 耕治, 畠山 賢彦, 大窪 秀明, 湯葢 邦夫

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(S)

    Institution: 東北大学

    2003 - 2007

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    原子炉圧力容器(RPV)鋼の照射脆化の主原因とされている1nm程度の大きさのCu(富裕)析出物(CRP)についてはその原子レベルでの機構解明は未だ不十分である。本研究では、最近我々が発見したFeマトリクス中のCuナノ析出物の陽電子量子ドット現象を利用するとともに最新の3次元アトムプローブも併用し、照射下での(サブ)ナノCRPの形成と発展を明らかにすることを目的とする。 本年度は先ず、購入した半導体検出器などを利用し、デジタル・オッシロスコープを用いた新方式の陽電子寿命・運動量相関(AMOC)装置を完成させた。この装置を用い、FeCuモデル合金中に生ずるCuナノ析出物は熱時効析出の初期から既に純Cu銅であることなどを明らかにした。次いで陽電子消滅特性の精密計算に必要な計算方式(電子間の多体効果に由来する自己エネルギーを考慮したGW方式)の開発を行った。 RPV鋼の照射脆化を調べるには、発電炉の実機監視試験片を解析することが欠かせない。しかしながら、実機監視試験片のナノ材料学的な解析が行われたことは殆どないのが現状である。我々はこの点を解決すべく、以下の2種の監視試験片を入手し解析を行った。先ず日本原子力発電の東海1号炉(約20年間稼働後1998年廃炉)の監視試験片では、(i)いわゆる照射欠陥は殆ど認められず、Cuナノ析出物のみが形成していること、(ii)しかしながら、同じ試験片を材料試験炉で約10000倍早い照射速度で照射したところ、逆にCuナノ析出物は認められず、照射欠陥のみが生じていること、などを明らかにした。次にベルギーのDoel2号炉監視試験片(溶接部)を入手し、低Cu材と高Cu材では、Cuナノ析出物と照射欠陥の形成・発展挙動が大きく異なることを見いだした。これら実機試験片に関する結果は、この分野で非常に重要な新知見である。

  22. 放射性廃棄物核種を包含するガラスナノボイドの構造および安定性の解明

    井上 耕治

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 若手研究(B)

    Institution: 東北大学

    2004 - 2005

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    本研究では、陽電子と電子の束縛状態であるポジトロニウムが、ガラス中の構造的なサブナノ空隙中で消滅し、そのサブナノ空隙のサイズに関する情報を与えてくれることに注目した。このことを利用して、放射性廃棄物ガラス固化体中に含まれる放射性核種からの放射線によって生ずる照射欠陥形成に伴う、核種含有サイトである構造サブナノ空隙の変化の解明やそれらが長期保管に与える影響について調べようとする。放射性廃棄物ガラス固化体を理解するには、その基本要素から構成される2成分系モデルガラスについての理解が必要不可欠であり、先ずこれらのガラスについて、サブナノ空隙の化学組成や照射による変化、照射欠陥の形成過程について調べた。 廃棄物ガラスの主成分であるSiO_2に網目形成酸化物であるB_2O_3や網目修飾酸化物Na_2Oを加えた2成分系モデルガラスについて組成比を変化させて試料を作製し、陽電子消滅法を用いてサブナノ空隙のサイズの化学組成依存性について系統的に調べた。その結果、大部分の放射性廃棄物核種が属する網目修飾酸化物の陽イオンは、サイズの大きなサブナノ空隙から選択的に入り込むことがわかった。また、この試料に、電子線(エネルギー3MeV、照射量1×10^<18>e/cm^2)やプロトン(エネルギー1MeV、照射量1×10^<16>H^+/cm^2)を照射し、照射欠陥形成に伴うサブナノボイドのサイズ変化を系統的に調べた。照射によるサブナノ空隙のサイズ変化は本研究の照射条件では起こらないことがわかった。電子スピン共鳴法を用いて、粒子線照射に伴うボンド切断や照射欠陥形成について系統的に調べた。SiO_2・B_2O_3系モデルガラスではB_2O_3の含有率が増えるほど、常磁性照射欠陥の回復温度は低くなること、Na_2Oを含有するSiO_2・Na_2O系モデルガラスではNa_2Oの含有率が増えるほど、常磁性照射欠陥の生成量が減少することがわかった。

  23. Study of Nano-Clustering Mechanism by Positron Annihilation and 3D Atom Probe

    NAGAI Yasuyoshi, HASEGAWA Masayuki, TANG Zheng, INOUE Koji, HATAKEYAMA Masahiko, HONO Kazuhiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2003 - 2005

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    The purpose of the present study is to analyze the formation mechanism of nano-clusters in materials, the formation of vacancy-solute complexes and the kinetics of the cluster formation through the migration of the complexes, never revealed by conventional methods, by using positron annihilation and three-dimensional atom probe (3DAP). We have obtained the following results : 1) The specimens, Fe-Cu, Al-Ag, Al-Zn etc. single crystals and polycrystals, were prepared. 2) Positron annihilation and 3DAP techniques are employed to investigate the pre-precipitation of solute clustering in Al-Cu-Mg, Al-Cu-Mg-Ag and Al-Li-Cu-Mg-Ag alloys. Not only by observing the solute clusters using 3DAP but also by detecting quenched-in vacancies and their vacancy-solute complexes using positron lifetime and coincidence Doppler broadening (CDB) of positron annihilation, we reveal the effect of vacancy-solute interactions in the solute clustering in the early stage of the precipitation in the Al alloys. The present success shows that the combination of positron annihilation and 3DAP is very useful to study the mechanism of the solute clustering. 3) Two-dimensional angular correlation of positron annihilation radiation (2D-ACAR) measurements revealed Fermi surface topology of embedded nano-clusters. By comparing experimental results with the first principles calculations, we proposed a new rule to determine the solute concentrations in the embedded clusters : band gap effect analogous of Peiers distortion and Hume-Rothery rule. 4) New method to estimate number density of subnano-clusters was developed, combined with positron age-momentum correlation measurements and positron diffusion evaluation by using energy variable positron beam in Oarai Center, Tohoku University.

  24. Study of Atomic and Electronic Structures of Nano-Particles in the Early Stages of Their Formation Using Self-Searching Positrons

    HASEGAWA Masayuki, NAGAI Yasuyoshi, TANG Zheng, INOUE Koji, OHKUBO Hideaki, YUBUTA Kunio

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2001 - 2002

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    Embedded (sub-)nano particles in materials play important roles in controlling the physical and mechanical properties of the host materials. Thus it is very indispensable to clarify the evolution processes of the nano particles as well as their atomic and electronic structures. This study aims to establish a novel approach to these issues with use of the latest positron-annihilation experimental and theoretical methods, such as coincidence Doppler broadening (CDB), two-dimensional angular correlation of annihilation radiation (2D-ACAR) and corresponding first-principles calculations. First we have revealed the formation process of Cu (bcc) particles in thermally aged Fe-Cu alloys by detailed aging experiments; the evolution of Cu aggregation in different aging conditions has been investigated by the CDB method. Second we have obtained detailed aging-induced changes in the 2D-ACAR momentum distribution, especially around Fermi cut-off momentum region. Larger smearing around the Fermi momentum is observed for the small Cu particles with sub-nano sizes. This observation strongly suggests a new and unique method for detecting sub-nano size Cu particles in Fe. At this stage we have succeeded to observe the nano particles larger than 0.5 nm. We also have measured 2D-ACAR spectrum of aging-induced particles in the single crystals of Al alloys: Ag_2Al and fcc Zn particles. Combining the first-principles calculations, we obtained detailed Fermi surfaces of the embedded particles.

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  1. 極低炭素鋼・複合組織鋼の歪時効中のCの存在形態の解明

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    3次元アトムプローブによる極低炭素鋼・複合組織鋼の歪時効中のCの存在形態の解明

  2. 照射ジルコニウム合金の微細組織変化に関する研究

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    照射ジルコニウム合金の粒界偏析の研究

  3. 焼付硬化型鋼板(BH鋼板)の歪時効中のCの存在形態の解明

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    焼付硬化型鋼板(BH鋼板)の歪時効中のCの存在形態の解明

  4. 半導体デバイスの微視的3次元構造の研究

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    アトムプローブによる半導体デバイスの微視的3次元構造観察

  5. Ni基耐熱合金損傷過程のナノ欠陥モデルの構築

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    Ni基耐熱合金損傷過程のナノ欠陥モデルの構築

  6. 3D-APを用いた鋼中ナノ析出相の組成の高精度決定

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    3D-APを用いた鋼中ナノ析出相の組成の高精度決定

  7. 原子炉圧力容器鋼のナノスケール粒界組織分析

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    3次元アトムプローブ法により、原子炉圧力容器用低合金鋼の粒界分析を行う。

  8. 低炭素ステンレス鋼表面硬化層の材料組織評価研究

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    低炭素ステンレス鋼表面硬化層の材料組織評価研究

  9. アトムプローブによる半導体中の不純物の三次元評価技術に関する研究

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    シリコン中の不純物の三次元分布をアトムプローブ法により測定し、不純物分布のばらつきを検討する。

  10. 原子炉圧力容器鋼溶接熱影響部の照射脆化に関わるミクロ組織分析

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    原子炉圧力容器鋼溶接熱影響部の照射脆化に関わるミクロ組織分析

  11. 原子炉鉄鋼材料の脆化・劣化機構および予測に関する革新的ナノ材料研究

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    高経年化時代を迎えている軽水炉型原子炉鉄鋼材料の安全・安心性確保に関し、最重要かつ緊急な課題の1つに圧力容器(RPV)鋼の照射脆化やシュラウド、再循環系配管の応力腐食割れが挙げられる。本研究では、その原因となる照射誘起の超微小(ナノ)析出物および欠陥の形成・発展を最先端の陽電子消滅、アトムプローブなどを併用し、原子レベルから解明するとともに脆化・劣化の予測のための基本的な学術を確立することを目指す。 具体的には、先ず実機圧力容器鋼試験片(Calder Hall型炉、Belgium発電炉など)で実際に生じている(サブ)ナノCu(富裕)析出物およびそれらとMn,Ni,Pなどの相互作用、粒界偏析、照射欠陥形成などを最先端の陽電子消滅(同時計数ドップラー広がり、寿命-運動量相関など)およびエネルギー補償型3次元アトムプローブなどによる観察により明らかにする。さらにこれらの手法をさらに発展させ、シュラウド・ステンレス鋼中のナノクラスター(析出物)、粒界偏析、表面近傍欠陥など未解決の問題を明らかにしようとする。

  12. 照射影響評価研究

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    地層処分システムのガラス固化体、オーバーパック材料(炭素鋼等)等は、長期間に亘って、高放射線環境下に置かれる。本研究はこれらの材料に対する放射線照射損傷の評価技術を開発するとともに、照射影響を評価するためのデータの取得、理論計算等を行い、放射線照射の長期性能に及ぼす影響を評価する。

Show all Show first 5