Details of the Researcher

PHOTO

Chen Chong
Section
Institute for Materials Research
Job title
Assistant Professor
e-Rad No.
21035446

Papers 24

  1. Highly Sensitive Surface Acoustic Wave Magnetic Field Sensor Based on a Strongly Coupled Magnon-Phonon System

    Chong Chen, Mingyuan Ma, Weiqi Du, Zheng Sun, Deqi Tao, Lei Han, Sulei Fu, Feng Pan, Cheng Song

    ADVANCED FUNCTIONAL MATERIALS　2025/10/18

    DOI： 10.1002/adfm.202518999 　

    ISSN： 1616-301X

    eISSN： 1616-3028

  2. Enhanced Radiation Efficiency by Resonant Coupling in a Large Bandwidth Magnetoelectric Antenna

    Mingyuan Ma, Chong Chen, Huiping Xu, Yanzhang Cao, Lei Han, Boyuan Xiao, Peisen Liu, Shixuan Liang, Wenxuan Zhu, Sulei Fu, Cheng Song, Feng Pan

    ADVANCED FUNCTIONAL MATERIALS　34　(48)　2024/11

    DOI： 10.1002/adfm.202408699 　

    ISSN： 1616-301X

    eISSN： 1616-3028

  3. Electrical Detection of Acoustic Antiferromagnetic Resonance in Compensated Synthetic Antiferromagnets

    Chong Chen, Peisen Liu, Shixuan Liang, Yichi Zhang, Wenxuan Zhu, Lei Han, Qian Wang, Sulei Fu, Feng Pan, Cheng Song

    PHYSICAL REVIEW LETTERS　133　(5)　2024/07/30

    DOI： 10.1103/PhysRevLett.133.056702 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  4. High-Frequency Magnetoelectric Antenna by Acoustic Excitation for 5G Communication

    Mingyuan Ma, Chong Chen, Huiping Xu, Peisen Liu, Boyuan Xiao, Shixuan Liang, Sulei Fu, Cheng Song, Feng Pan

    IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS　23　(5)　1518-1522　2024/05

    DOI： 10.1109/LAWP.2024.3360947 　

    ISSN： 1536-1225

    eISSN： 1548-5757

  5. Magneto-acoustic coupling: Physics, materials, and devices

    Chen Chong, Ma Ming-Yuan, Pan Feng, Song Cheng

    ACTA PHYSICA SINICA　73　(5)　2024/03/05

    DOI： 10.7498/aps.73.20231908 　

    ISSN： 1000-3290

  6. Direct-Current Electrical Detection of Surface-Acoustic-Wave-Driven Ferromagnetic Resonance

    Chong Chen, Lei Han, Peisen Liu, Yichi Zhang, Shixuan Liang, Yongjian Zhou, Wenxuan Zhu, Sulei Fu, Feng Pan, Cheng Song

    ADVANCED MATERIALS　35　(38)　2023/09/21

    DOI： 10.1002/adma.202302454 　

    ISSN： 0935-9648

    eISSN： 1521-4095

  7. Ordered creation and motion of skyrmions with surface acoustic wave

    Ruyi Chen, Chong Chen, Lei Han, Peisen Liu, Rongxuan Su, Wenxuan Zhu, Yongjian Zhou, Feng Pan, Cheng Song

    NATURE COMMUNICATIONS　14　(1)　2023/07/22

    DOI： 10.1038/s41467-023-40131-1 　

    eISSN： 2041-1723

  8. Energy Harvest in Ferromagnet-Embedded Surface Acoustic Wave Devices

    Chong Chen, Sulei Fu, Lei Han, Rongxuan Su, Peisen Liu, Ruyi Chen, Wenxuan Zhu, Liyang Liao, Feng Pan, Cheng Song

    ADVANCED ELECTRONIC MATERIALS　8　(11)　2022/11

    DOI： 10.1002/aelm.202200593 　

    ISSN： 2199-160X

  9. Broadband Excitation of Antiferromagnetic Dynamics by Acoustic Phonons

    Shixuan Liang, Wenxuan Zhu, Chong Chen, Mingyuan Ma, Weiaqi Du, Lei Han, Yanzhang Cao, Yichen Su, Shihai An, Zhiyuan Zhou, Sulei Fu, Yuyan Wang, Feng Pan, Cheng Song

    Advanced Materials　38　(15)　2026/02/10

    Publisher: Wiley

    DOI： 10.1002/adma.202521359 　

    ISSN： 0935-9648

    eISSN： 1521-4095

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    ABSTRACT Excitation of antiferromagnetic dynamics is at the core of ultrafast spintronics. Coherent excitation of antiferromagnetic magnons is typically monochromatic, confined at dispersion intersections between antiferromagnetic magnons and the excitation source. Broadband excitation can be enabled by introducing electron spins in an incoherent manner, albeit accompanied by high energy consumption from Joule heating. Here, we demonstrate a broadband excitation of antiferromagnetic dynamics of 2D antiferromagnet CrSBr without Joule heating, by Rayleigh‐type surface acoustic wave (R‐SAW). Incoherent magnons are efficiently excited via the angular momentum transfer from acoustic phonons, across a wide range up to the spin‐flop field. The collinear alignment between the Néel vector and phonon angular momenta induces strong excitation of magnons with high phonon dissipation, whereas orthogonal alignment suppresses dissipation, as revealed by R‐SAW transmission. Our work uncovers a mutual interplay between phonon transport and antiferromagnetic order parameters, offering a broadband, low‐loss route to manipulate antiferromagnetic dynamics.

  10. Third-Order Nonlinear Hall Effect in Altermagnet RuO2

    R. Y. Chu, L. Han, Z. H. Gong, X. Z. Fu, H. Bai, S. X. Liang, C. Chen, S-W. Cheong, Y. Y. Zhang, J. W. Liu, Y. Y. Wang, F. Pan, H. Z. Lu, C. Song

    Physical Review Letters　135　(21)　2025/11/17

    Publisher: American Physical Society (APS)

    DOI： 10.1103/rv1n-vr4p 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  11. Insight into spin-to-charge conversion in rutile RuO2

    Yanzhang Cao, Da Tian, Lin Huang, Hua Bai, Shixuan Liang, Lei Han, Chong Chen, Yichi Zhang, Lei Wang, Caihong Zhang, Feng Pan, Biaobing Jin, Cheng Song

    PHYSICAL REVIEW B　112　(6)　2025/08/07

    DOI： 10.1103/z478-fgl8 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  12. Electrical manipulation of spin splitting torque in altermagnetic RuO2

    Yichi Zhang, Hua Bai, Jiankun Dai, Lei Han, Chong Chen, Shixuan Liang, Yanzhang Cao, Yingying Zhang, Qian Wang, Wenxuan Zhu, Feng Pan, Cheng Song

    Nature Communications　16　(1)　2025/07/01

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41467-025-60891-2 　

    eISSN： 2041-1723

  13. Probing the Néel Order in Altermagnetic RuO2 Films via X-Ray Magnetic Linear Dichroism

    Yi-Chi Zhang, Hua Bai, Dong-Hui Zhang, Chong Chen, Lei Han, Shi-Xuan Liang, Rui-Yue Chu, Jian-Kun Dai, Maciek Sawicki, Feng Pan, Cheng Song

    CHINESE PHYSICS LETTERS　42　(2)　2025/03/01

    DOI： 10.1088/0256-307X/42/2/027301 　

    ISSN： 0256-307X

    eISSN： 1741-3540

  14. Field‐Free Perpendicular Magnetic Memory Driven by Out‐of‐Plane Spin‐Orbit Torques

    Shixuan Liang, Aitian Chen, Lei Han, Hua Bai, Chong Chen, Lin Huang, Mingyuan Ma, Feng Pan, Xixiang Zhang, Cheng Song

    Advanced Functional Materials　35　(12)　2024/11/19

    Publisher: Wiley

    DOI： 10.1002/adfm.202417731 　

    ISSN： 1616-301X

    eISSN： 1616-3028

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    Abstract Magnetic memory based on spin‐orbit torque (SOT) is a promising candidate for the next‐generation storage devices. Materials that generate out‐of‐plane spin polarization ( σ z ) are highly desired and actively pursued as the SOT generator, due to its ability to achieve field‐free SOT switching of perpendicular magnetization. However, integrating σ z into perpendicular magnetic tunnel junction for efficient data writing is not realized. Here, utilizing σ z from antiferromagnetic spin Hall effect in Mn 2 Au, σ z ‐enabled field‐free SOT switching of perpendicular magnetic tunnel junctions is realized demonstrating a magnetic memory with both writing and reading electrically. The tunnel magnetoresistance ratio achieves 66% with a critical current density of 5.6 × 10 6  A cm −2 at room temperature. Such field‐free fully SOT switching is further directly confirmed by domain imaging via magneto‐optical Kerr effect microscopy. In addition to enabling field‐free switching, σ z is proposed to assist ultrafast and more efficient switching of perpendicular magnetization compared with conventional in‐planes ones, based on simulations. This research advances the application of out‐of‐plane SOTs and paves the way for high‐density, high‐speed, and low‐power magnetic memory.

  15. Terahertz oscillation driven by optical spin-orbit torque

    Lin Huang, Yanzhang Cao, Hongsong Qiu, Hua Bai, Liyang Liao, Chong Chen, Lei Han, Feng Pan, Biaobing Jin, Cheng Song

    Nature Communications　15　(1)　2024/08/22

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41467-024-51440-4 　

    eISSN： 2041-1723

  16. Simultaneous High Charge-Spin Conversion Efficiency and Large Spin Diffusion Length in Altermagnetic RuO2

    Yichi Zhang, Hua Bai, Lei Han, Chong Chen, Yongjian Zhou, Christian H. Back, Feng Pan, Yuyan Wang, Cheng Song

    ADVANCED FUNCTIONAL MATERIALS　34　(24)　2024/06

    DOI： 10.1002/adfm.202313332 　

    ISSN： 1616-301X

    eISSN： 1616-3028

  17. Electrical 180° switching of Néel vector in spin-splitting antiferromagnet

    Lei Han, Xizhi Fu, Rui Peng, Xingkai Cheng, Jiankun Dai, Liangyang Liu, Yidian Li, Yichi Zhang, Wenxuan Zhu, Hua Bai, Yongjian Zhou, Shixuan Liang, Chong Chen, Qian Wang, Xianzhe Chen, Luyi Yang, Yang Zhang, Cheng Song, Junwei Liu, Feng Pan

    SCIENCE ADVANCES　10　(4)　2024/01/26

    DOI： 10.1126/sciadv.adn0479 　

    ISSN： 2375-2548

  18. Spin-torque-driven antiferromagnetic resonance

    Yongjian Zhou, Tingwen Guo, Lei Han, Liyang Liao, Wenqing He, Caihua Wan, Chong Chen, Qian Wang, Leilei Qiao, Hua Bai, Wenxuan Zhu, Yichi Zhang, Ruyi Chen, Xiufeng Han, Feng Pan, Cheng Song

    SCIENCE ADVANCES　10　(2)　2024/01/12

    DOI： 10.1126/sciadv.adk7935 　

    ISSN： 2375-2548

  19. Strain-Induced Uphill Hydrogen Distribution in Perovskite Oxide Films

    Qian Wang, Youdi Gu, Chong Chen, Lei Han, Muhammad Umer Fayaz, Feng Pan, Cheng Song

    ACS Applied Materials & Interfaces　16　(3)　3726-3734　2024/01/10

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acsami.3c17472 　

    ISSN： 1944-8244

    eISSN： 1944-8252

  20. Interface-enhanced room-temperature Curie temperature in CrPS4/graphene van der Waals heterostructure

    Wenxuan Zhu, Cheng Song, Lei Han, Hua Bai, Chong Chen, Feng Pan

    PHYSICAL REVIEW B　108　(10)　2023/09/26

    DOI： 10.1103/PhysRevB.108.L100406 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  21. Realizing Metastable Cobaltite Perovskite via Proton-Induced Filling of Oxygen Vacancy Channels

    Qian Wang, Youdi Gu, Chong Chen, Leilei Qiao, Feng Pan, Cheng Song

    ACS Applied Materials & Interfaces　15　(1)　1574-1582　2022/12/20

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acsami.2c18311 　

    ISSN： 1944-8244

    eISSN： 1944-8252

  22. Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities

    Qian Wang, Youdi Gu, Chong Chen, Feng Pan, Cheng Song

    JOURNAL OF PHYSICAL CHEMISTRY LETTERS　13　(43)　10065-10075　2022/11/03

    DOI： 10.1021/acs.jpclett.2c02634 　

    ISSN： 1948-7185

  23. Antiferromagnetic Inverse Spin Hall Effect

    Lin Huang, Yongjian Zhou, Hongsong Qiu, Hua Bai, Chong Chen, Weichao Yu, Liyang Liao, Tingwen Guo, Feng Pan, Biaobing Jin, Cheng Song

    ADVANCED MATERIALS　34　(42)　2022/10

    DOI： 10.1002/adma.202205988 　

    ISSN： 0935-9648

    eISSN： 1521-4095

  24. Observation of negative capacitance in antiferroelectric PbZrO3 Films

    Leilei Qiao, Cheng Song, Yiming Sun, Muhammad Umer Fayaz, Tianqi Lu, Siqi Yin, Chong Chen, Huiping Xu, Tian-Ling Ren, Feng Pan

    Nature Communications　12　(1)　2021/07/09

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41467-021-24530-w 　

    eISSN： 2041-1723

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    Abstract Negative capacitance effect in ferroelectric materials provides a solution to the energy dissipation problem induced by Boltzmann distribution of electrons in conventional electronics. Here, we discover that besides ferroelectrics, the antiferroelectrics based on Landau switches also have intrinsic negative capacitance effect. We report both the static and transient negative capacitance effect in antiferroelectric PbZrO3 films and reveal its possible physical origin. The capacitance of the capacitor of the PbZrO3 and paraelectric heterostructure is demonstrated to be larger than that of the isolated paraelectric capacitor at room temperature, indicating the existence of the static negative capacitance. The opposite variation trends of the voltage and charge transients in a circuit of the PbZrO3 capacitor in series with an external resistor demonstrate the existence of transient negative capacitance effect. Strikingly, four negative capacitance effects are observed in the antiferroelectric system during one cycle scan of voltage pulses, different from the ferroelectric counterpart with two negative capacitance effects. The polarization vector mapping, electric field and free energy analysis reveal the rich local regions of negative capacitance effect with the negative dP/dE and (δ2G)⁄(δD2), producing stronger negative capacitance effect. The observation of negative capacitance effect in antiferroelectric films significantly extends the range of its potential application and reduces the power dissipation further.

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