Details of the Researcher

PHOTO

Kohei Shima
Section
Institute of Multidisciplinary Research for Advanced Materials
Job title
Associate Professor
Degree

  • 博士（工学）（東京大学）

  • 修士（工学）（東京大学）

e-Rad No.
40805173
Researcher ID
N-1648-2014
Profile

 

■Research Interest

Elucidating Fundamental Physics of Wide Bandgap Nitride Semiconductors for Advanced Optoelectronic and Power Devices

Main research directions include:

(1) Investigating the formation mechanisms and roles of intrinsic defects and impurities, especially vacancy-type defects, in determining the luminescence properties and carrier dynamics of group III-nitrides (InN, GaN, AlN, and BN), group II-oxides (ZnO and MgO), and their alloys.

(2) Developing advanced characterization techniques, including spatio-time-resolved luminescence spectroscopy to precisely evaluate recombination lifetimes and defect structures in wide bandgap semiconductors.

(3) Optimizing material growth and processing techniques, such as ion implantation and annealing, to control defect formation and enhance the performance of p-type GaN and related heterostructures for high-efficiency devices.

(4) Exploring novel wide bandgap materials and heterojunctions (e.g., polytypes of hexagonal BN, nitride/diamond) for next-generation deep-UV light emitters and power electronics.

 

 ■ Curriculum Vitae

 ■ Lab homepage

 ■ Born Oct. 3, 1988

 

Research History 9

  • 2023/04 - Present
    Tohoku University　Institute of Multidisciplinary Research for Advanced Materials Division of Measurements　Associate professor

  • 2018/08 - 2023/03
    Tohoku University　Institute of Multidisciplinary Research for Advanced Materials Division of Measurements　Research associate

  • 2017/04 - 2018/07
    Tohoku University　Institute of Multidisciplinary Research for Advanced Materials Division of Measurements　Posdoc

  • 2013/04 - 2017/03
    PhD course, Department of Materials Engineering, School of Engineering, The University of Tokyo

  • 2012/10 - 2017/03
    The University of Tokyo, The Materials Education Program for the Future Leaders in Research, Industry, and Technology (MERIT), The Japan Society for the Promotion of Science through the Program for Leading Graduate Schools

  • 2016/05 - 2016/06
    Corporate Internship, IHI Corporation, Aerospace Division Technology Development Center, materials technology unit

  • 2011/04 - 2013/03
    Master course, Department of Materials Engineering, School of Engineering, The University of Tokyo

  • 2009/04 - 2011/03
    Bachelor course, Department of Materials Engineering, Faculty of Engineering, The University of Tokyo

  • 2007/04 - 2009/03
    College of Arts and Sciences, The University of Tokyo

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Education 3

  • The University of Tokyo　Graduate School, Division of Engineering　Department of Materials Engineering

    - 2017/03

  • The University of Tokyo　Graduate School, Division of Engineering　Department of Materials Engineering

    - 2013/03

  • The University of Tokyo　Faculty of Engineering　Department of Materials Engineering

    - 2011/03

Committee Memberships 1

  • The International Workshop of Nitride Semiconductors 2026 (IWN2026)　General Affairs Committee

    2024/12 - 2027/03

Professional Memberships 5

  • Research committee on transparent oxide materials for optics and electronics

    2024/07 - Present

  • The Japanese Association for Crystal Growth

    2020/07 - Present

  • 化学工学会 反応工学部会 CVD反応分科会

    2012/09 - Present

  • The Japan Society of Applied Physics

    2011/08 - Present

  • The Society of Chemical Engineers, Japan

    2012/09 - 2020/06

Research Interests 20

  • Ion implantation

  • Deep-ultraviolet (DUV) light emitter

  • Vacancy-type defects

  • 2D materials

  • Metallization

  • Fiber Reinforced Ceramic

  • Boron nitride

  • Vapor-phase epitaxy

  • Opto-electronics

  • Ammonothermal method

  • Polariton laser

  • Exciton

  • Spatio-time-resolved cathodoluminescence

  • III-N semiconductor

  • Wide-bandgap semiconductor

  • SiC/SiC Ceramic matrix composites (CMCs)

  • ULSI Cu interconnects

  • Chemical vapor infiltration

  • Atomic layer deposition

  • Chemical vapor deposition

Research Areas 4

  • Nanotechnology/Materials / Applied physics - general /

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Chemical reaction and process system engineering /

  • Nanotechnology/Materials / Material fabrication and microstructure control /

  • Nanotechnology/Materials / Crystal engineering /

Awards 9

  1. Best Paper Award

    2025/06　The 22nd International Workshop on Junction Technology (IWJT2025)　"Characterization of vacancy-type defects in Mg- and N-implanted GaN by using a monoenergetic positron beam"

  2. 第16回（令和6年度）ナノ構造エピタキシャル成長講演会 研究奨励賞

    2024/05　日本結晶成長学会 ナノ構造・エピタキシャル成長分科会　Mgイオン注入GaNにおける空孔型欠陥のルミネッセンス評価

  3. 第33回(令和4年度)トーキン財団奨励賞

    2023/03　トーキン科学技術振興財団　室温で共振器ポラリトンを呈するチップサイズ酸化亜鉛微小共振器の実現

  4. 43rd JSAP Outstanding Paper Award 2021, JSAP Paper Award

    2021/07　The Japan Society of Applied Physics　Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

  5. Best poster Award

    2019/07　The 13th International Conference on Nitride Semiconductors (ICNS-13)　Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN

  6. Best Paper Award

    2019/06　19th International Workshop on Junction Technology (IWJT2019)　"Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes"

  7. COMSOL Conference Tokyo 2015優秀ポスター賞

    2015/12　微細溝への薄膜堆積における溝内膜厚分布の時間変化の可視化

  8. The Bruce Deal & Andy Grove Young Author Award 2015

    2015/10　The Electrochemical Society　"Comparative Study on Cu-CVD Nucleation Using β-diketonato and Amidinato Precursors for Sub-10-nm-Thick Continuous Film Growth"

  9. 化学工学会反応工学部会CVD反応分科会 平成２７年度 奨励賞

    2015/09　化学工学会 反応工学部会 CVD反応分科会　「超高アスペクト比ミクロキャビティを用いたSiC-CVI法のモデリング」

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Papers 55

  1. Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates International-journal Peer-reviewed

    R. Akaike, K. Uesugi, K. Shima, S. F. Chichibu, A. Uedono, T. Nakamura, H. Miyake

    Applied Physics Express　18　065503-1-5　2025/06

    DOI： 10.35848/1882-0786/ade2b7 　

  2. Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements International-journal International-coauthorship Peer-reviewed

    K. Shima, T. Narita, A. Uedono, M. Bockowski, J. Suda, T. Kachi, S. F. Chichibu

    Journal of Applied Physics　137　235702-1-12　2025/06

    DOI： 10.1063/5.0266700 　

  3. Roles of Al-vacancy complexes on the luminescence spectra of Si-doped AlN grown by halide vapor phase epitaxy International-journal International-coauthorship Peer-reviewed

    S. F. Chichibu, K. Kikuchi, B. Moody, S. Mita, R. Collazo, Z. Sitar, Y. Kumagai, S. Ishibashi, A. Uedono, K. Shima

    Applied Physics Letters　126　111905-1-7　2025/03

    DOI： 10.1063/5.0252149 　

  4. Luminescence Studies of Indirect-Bandgap Layered BN Polytypes Invited Peer-reviewed

    S. F. Chichibu, K. Shima, K. Hara

    Journal of the Japanese Association for Crystal Growth　52　pp-p-pp-1-10　2025

    Publisher: The Japanese Association for Crystal Growth

  5. Characterization of vacancy-type defects in Mg- and N-implanted GaN by using a monoenergetic positron beam International-journal International-coauthorship

    A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, K. Sierakowski, M. Bockowski

    Proceedings of IWJT2025　79-82　2025

    Publisher: IEEE

    DOI： 10.23919/IWJT66253.2025.11072893 　

  6. 275 nm帯AlGaN LEDの初期劣化機構 Invited

    秩父重英, 奥野浩司, 大矢昌輝, 齋藤義樹, 石黒永孝, 竹内哲也, 嶋紘平

    応用電子物性分科会誌　30　(2)　57-67　2024/07

    Publisher: 応用電子物性分科会

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    ISSN1341-5123

  7. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers International-journal Invited Peer-reviewed

    S. F. Chichibu, K. Shima, A. Uedono, S. Ishibashi, H. Iguchi, T. Narita, K. Kataoka, R. Tanaka, S. Takashima, K. Ueno, M. Edo, H. Watanabe, A. Tanaka, Y. Honda, J. Suda, H. Amano, T. Kachi, T. Nabatame, Y. Irokawa, Y. Koide

    Journal of Applied Physics　135　185701-1-20　2024/05

    DOI： 10.1063/5.0201931 　

  8. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method International-journal Peer-reviewed

    K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, M. Saito, D. Tomida, A. Uedono, S. Ishibashi, T. Ishiguro, S. F. Chichibu

    Applied Physics Letters　124　(18)　181103-1-6　2024/04

    DOI： 10.1063/5.0208853 　

  9. Vacancy-type defects and their trapping/detrapping of charge carriers in ion-implanted GaN studied by positron annihilation International-journal International-coauthorship Peer-reviewed

    A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, K. Sierakowski, M. Bockowski

    Physica Status Solidi B　261　2400060-1-10　2024/02

    DOI： 10.1002/pssb.202400060 　

  10. Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride International-journal International-coauthorship Peer-reviewed

    K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu

    Scientific Reports　14　169-1-8　2024/01

    DOI： 10.1038/s41598-023-50502-9 　

  11. Steady-state and dynamic characteristics of deep UV luminescence in rocksalt-structured MgxZn1-xO International-journal Peer-reviewed

    T. Onuma, K. Kudo, M. Ono, W. Kosaka, K. Shima, K. Ishii, K. Kaneko, Y. Ota, T. Yamaguchi, K. Kojima, S. Fujita, S. F. Chichibu, T. Honda

    Journal of Applied Physics　134　(2)　025102-1-11　2023/07

    Publisher: AIP Publishing

    DOI： 10.1063/5.0155269 　

    ISSN： 0021-8979

    eISSN： 1089-7550

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    Temperature-dependent cathodoluminescence spectra were measured for rock salt-structured MgxZn1−xO films with x = 0.95–0.61. The Mg0.95Zn0.05O film exhibited the shortest deep UV peak wavelength of 199 nm (6.24 eV) at 6 K. Relatively high equivalent internal quantum efficiencies of 0.9%–11% were obtained. The Tauc plots, which were obtained from temperature-dependent optical transmittance measurements, exhibited large Stokes-like shifts of 0.7–0.9 eV at 6–300 K. Time-resolved photoluminescence (PL) signals at 7 K exhibited fast and slow decay components. The fast decay component had PL lifetimes of 2.59–3.08 ns, and the slow decay component far exceeded the measurement time range of 12.5 ns. The fast decay constant reflected the transfer lifetime of the photoexcited carriers to certain trapping centers. These centers were tentatively ascribed to Zn-related isoelectronic trapped-hole centers and may be a cause of the large Stokes-like shifts. The signals at 300 K exhibited very short PL lifetimes of 120–180 ps. The PL lifetimes were mainly attributed to the nonradiative recombination lifetime. Simultaneous decreases in the Zn-related isoelectronic trapped-hole centers and the nonradiative recombination centers were found to be necessary to improve the DUV emission properties of RS-MgxZn1−xO films.

  12. Polishing and etching damages of ZnO single crystals studied using time-resolved photoluminescence spectroscopy International-journal Peer-reviewed

    T. Kasuya, K. Shima, S. F. Chichibu

    Journal of Applied Physics　134　(2)　025302-1-10　2023/07

    DOI： 10.1063/5.0149404 　

  13. Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N International-journal

    K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, A. Uedono, S. Ishibashi, S. F. Chichibu

    Proceedings of IWJT2023　1-4　2023/07

    Publisher: IEEE

    DOI： 10.23919/IWJT59028.2023.10175182 　

  14. Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate International-journal Invited Peer-reviewed

    S. F. Chichibu, K. Nagata, M. Oya, T. Kasuya, K. Okuno, H. Ishiguro, Y. Saito, T. Takeuchi, K. Shima

    Applied Physics Letters　122　(20)　201105-1-7　2023/05

    Publisher: AIP Publishing

    DOI： 10.1063/5.0147984 　

    ISSN： 0003-6951

    eISSN： 1077-3118

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    APL Special Collection on UV/DUV Light Emitters

  15. Band Alignment and Quality of Al0.6Ga0.4N/AlN Films Grown on Diamond (111) Substrate by Remote N-Plasma Assisted MBE International-journal Peer-reviewed

    Shozo Kono, Kohei Shima, Shigefusa Chichibu, Masaru Shimomura, Taisuke Kageura, Hiroshi Kawarada

    Diamond & Related Materials　136　110013-1-17　2023/05

    DOI： 10.1016/j.diamond.2023.110013 　

    eISSN： 1556-5068

  16. Kinetic Study on Heterogeneous Nucleation and Incubation Period during Chemical Vapor Deposition International-journal Peer-reviewed

    Kohei Shima, Yuhei Otaka, Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki

    The Journal of Chemical Physics　158　124704-1-12　2023/03

    DOI： 10.1063/5.0133157 　

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    JCP Special Topic on Nucleation: Current Understanding Approaching 150 Years After Gibbs

  17. Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21) International-journal Peer-reviewed

    L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A. Uedono, S. F. Chichibu

    Journal of Applied Physics　132　(16)　163102-1-10　2022/10

    DOI： 10.1063/5.0106540 　

  18. 【Featured Article】Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors International-journal Peer-reviewed

    S. F. Chichibu, K. Shima, K. Kikuchi, N. Umehara, K. Takiguchi, Y. Ishitani, K. Hara

    Applied Physics Letters　120　(23)　231904-1-7　2022/06/06

    Publisher: AIP Publishing

    DOI： 10.1063/5.0090431 　

    ISSN： 0003-6951

    eISSN： 1077-3118

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    Hexagonal (h) BN is a semiconductor that crystallizes in layers of a two-dimensional honeycomb structure. Since hBN exhibits high quantum efficiency (QE) near-band edge emission at around 5.8 eV in spite of the indirect bandgap, hBN has a potential for the use in deep-ultraviolet light emitters. For elucidating the emission dynamics of indirect excitons (iXs) in hBN, spatially and temporally resolved luminescence measurements were carried out on hBN epilayers grown using carbon-free precursors. In addition to major [Formula: see text]m-side flat-topped (0001) hBN columnar grains, sub-[Formula: see text]m-scale polytypic segments were identified, which were likely formed by certain growth instabilities. The hBN domains exhibited predominant emissions of phonon-assisted fundamental iXs at 5.7–5.9 eV and a less-pronounced 4.0-eV emission band. The photoluminescence lifetime ([Formula: see text]) for the iX emissions was 54 ps, which most likely represents the midgap recombination lifetime ([Formula: see text]) for an iX reservoir. Because [Formula: see text] did not change while the cathodoluminescence (CL) intensity increased with temperature above 100 K, both the immobile character of iXs and strong exciton–phonon interaction seem significant for procreating the high QE. The CL intensity and [Formula: see text] of the 5.5 eV band monotonically decreased with temperature, indicating that [Formula: see text] represents [Formula: see text], most probably a nonradiative lifetime, around the real states. Equally significant emissions at 6.035 eV at 12 K and 6.0–6.1 eV at 300 K were observed from the polytypic segments, most probably graphitic bernal BN, which also exhibited negligible thermal quenching property.

  19. Low-pressure acidic ammonothermal growth of 2-inch-diameter nearly bowing-free bulk GaN crystals International-journal Peer-reviewed

    Kouhei Kurimoto, Quanxi Bao, Yutaka Mikawa, Kohei Shima, Tohru Ishiguro, Shigefusa F. Chichibu

    Applied Physics Express　15　055504-1-4　2022/04/18

    Publisher: IOP Publishing

    DOI： 10.35848/1882-0786/ac67fc 　

    ISSN： 1882-0778

    eISSN： 1882-0786

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    Abstract Seeded growth of 2-inch-diameter GaN crystals via low-pressure (~100 MPa) acidic ammonothermal method is demonstrated. Nearly bowing- and mosaic-free GaN crystals exhibiting the full-width at half-maximum values for the 0002 x-ray rocking curves below 20 arcsec were achieved on high lattice coherency c-plane SCAATTM seeds with gross dislocation densities in the order of 104 cm-2. The photoluminescence spectra of the grown crystals exhibited a predominant near-band-edge emission at 295 K, of which intensity was one order of magnitude higher than the characteristic deep-state emission bands. A nearly bowing-free 60 mm × 60 mm c-plane GaN crystal was eventually obtained.

  20. Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates International-journal Peer-reviewed

    Keisuke Nishimoto, Kohei Shima, Shigefusa F. Chichibu, Mutsumi Sugiyama

    Japanese Journal of Applied Physics　61　(2)　025505-1-5　2022/01/24

    Publisher: IOP Publishing

    DOI： 10.35848/1347-4065/ac4392 　

    ISSN： 0021-4922

    eISSN： 1347-4065

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    <title>Abstract</title> Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, a (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.

  21. Identifying the mechanism of formation of chlorinated silane polymer by-products during chemical vapor infiltration of SiC from CH3SiCl3/H2 International-journal Peer-reviewed

    N. Sato, Y. Fukushima, K. Shima, Y. Funato, T. Momose, M. Koshi, Y. Shimogaki

    International Journal of Chemical Kinetics　54　300-308　2022/01

    DOI： 10.1002/kin.21559 　

  22. Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam International-journal Peer-reviewed

    Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi

    Scientific Reports　11　(1)　20660-1-8　2021/12

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41598-021-00102-2 　

    eISSN： 2045-2322

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    <title>Abstract</title>A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an energy of 10 keV, and the Mg concentration in the subsurface region (≤ 50 nm) was on the order of 1019 cm−3. After the Mg-implantation, N+ ions were implanted to provide a 300-nm-deep box profile with a N concentration of 6 × 1018 cm−3. From capacitance–voltage measurements, the sequential implantation of N was found to enhance the activation of Mg. For N-implanted GaN before annealing, the major defect species were determined to Ga-vacancy related defects such as divacancy. After annealing below 1000 °C, the clustering of vacancies was observed. Above 1200 °C annealing, however, the size of the vacancies started to decrease, which was due to recombinations of vacancy clusters and excess N atoms in the damaged region. The suppression of vacancy clustering by sequential N-implantation in Mg-implanted GaN was attributed to the origin of the enhancement of the Mg activation.

  23. Conformal and Stoichiometric Chemical Vapor Deposition of Silicon Carbide onto Ultradeep Heterogeneous Micropores by Controlling the Initial Nucleation Stage International-journal Peer-reviewed

    Kohei Shima, Yuhei Otaka, Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki

    ACS Applied Materials & Interfaces　13　(44)　53009-53020　2021/11/10

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acsami.1c13117 　

    ISSN： 1944-8244

    eISSN： 1944-8252

  24. 【Editor's pick】Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg International-journal Invited Peer-reviewed

    K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Kojima, A. Uedono, S. Ishibashi, S. F. Chichibu

    Applied Physics Letters　119　(18)　182106-1-7　2021/11/03

    Publisher: AIP Publishing

    DOI： 10.1063/5.0066347 　

    ISSN： 0003-6951

    eISSN： 1077-3118

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    [Invited Paper] APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices

  25. c面Al0.83In0.17N/GaN格子整合ヘテロ構造の光学特性評価

    李リヤン, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 上殿明良, 石橋章司, 竹内哲也, 三好実人, 秩父重英

    信学技報、電子情報通信学会レーザ・量子エレクトロニクス(LQE)研究会　121　(259(ED2021 15-36))　45-50　2021/11

    ISSN： 2432-6380

  26. Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy International-journal Peer-reviewed

    L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, A. Uedono, S. Ishibashi, T. Takeuchi, M. Miyoshi, S. F. Chichibu

    Applied Physics Letters　119　(9)　091105-1-6　2021/08/31

    Publisher: AIP Publishing

    DOI： 10.1063/5.0066263 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  27. 【Plenary】Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors International-journal Invited

    Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shoji Ishibashi, Akira Uedono

    Proceedings of IWJT2021　2021/06/10

    Publisher: IEEE

    DOI： 10.23919/iwjt52818.2021.9609493 　

  28. Elementary gas‐phase reactions of radical species during chemical vapor deposition of silicon carbide using CH3SiCl3 International-journal Peer-reviewed

    Noboru Sato, Yuichi Funato, Kohei Shima, Hidetoshi Sugiura, Yasuyuki Fukushima, Takeshi Momose, Mitsuo Koshi, Yukihiro Shimogaki

    International Journal of Chemical Kinetics　53　638-645　2021/01/11

    Publisher: Wiley

    DOI： 10.1002/kin.21470 　

    ISSN： 0538-8066

    eISSN： 1097-4601

  29. Characterization of semiconductor crystals based on omnidirectional photoluminescence (ODPL) spectroscopy Invited Peer-reviewed

    K. Kojima, K. Shima, S. F. Chichibu

    Journal of the Japanese Association for Crystal Growth　48　48-4-03-1-9　2021

    Publisher: The Japanese Association for Crystal Growth

  30. Porous Membranes as Sacrificial Layers Enabling Conformal Chemical Vapor Deposition Involving Multiple Film-Forming Species International-journal Peer-reviewed

    Kohei Shima, Yuichi Funato, Noboru Sato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki

    ACS Applied Materials & Interfaces　12　51016-51025　2020/10/30

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acsami.0c14069 　

    ISSN： 1944-8244

    eISSN： 1944-8252

  31. Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN International-journal Peer-reviewed

    Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Yoshihiro Kangawa

    Scientific Reports　10　(1)　18570-1-11　2020/10/29

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41598-020-75380-3 　

    eISSN： 2045-2322

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    <title>Abstract</title> Immiscible semiconductors are of premier importance since the source of lighting has been replaced by white light-emitting-diodes (LEDs) composed of thermodynamically immiscible In<italic>x</italic>Ga1−<italic>x</italic>N blue LEDs and yellow phosphors. For realizing versatile deep-ultraviolet to near-infrared light-emitters, Al1−<italic>x</italic>In<italic>x</italic>N alloys are one of the desirable candidates. Here we exemplify the appearance and self-formation sequence of compositional superlattices in compressively strained <italic>m</italic>-plane Al1−<italic>x</italic>In<italic>x</italic>N films. On each terrace of atomically-flat <italic>m</italic>-plane GaN, In- and Al-species diffuse toward a monolayer (ML) step edge, and the first and second uppermost &lt; <inline-formula><alternatives><tex-math>$$\stackrel{-}{1}\stackrel{-}{1}20$$</tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mn>20</mml:mn> </mml:mrow> </mml:math></alternatives></inline-formula>&gt; cation-rows are preferentially occupied by Al and In atoms, respectively, because the configuration of one In-N and two Al-N bonds is more stable than that of one Al-N and two In-N bonds. Subsequent coverage by next &lt; <inline-formula><alternatives><tex-math>$$\stackrel{-}{1}\stackrel{-}{1}20$$</tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mn>20</mml:mn> </mml:mrow> </mml:math></alternatives></inline-formula>&gt; Al-row buries the &lt; <inline-formula><alternatives><tex-math>$$\stackrel{-}{1}\stackrel{-}{1}20$$</tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mn>20</mml:mn> </mml:mrow> </mml:math></alternatives></inline-formula>&gt; In-row, producing nearly Al0.5In0.5N cation-stripe ordering along [0001]-axis on GaN. At the second Al0.72In0.28N layer, this ordinality suddenly lessens but In-rich and In-poor &lt; <inline-formula><alternatives><tex-math>$$\stackrel{-}{1}\stackrel{-}{1}20$$</tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mn>20</mml:mn> </mml:mrow> </mml:math></alternatives></inline-formula>&gt;-rows are alternately formed, which grow into respective {0001}-planes. Simultaneously, approximately 5-nm-period Al0.70In0.30N/Al0.74In0.26N ordering is formed to mitigate the lattice mismatch along [0001], which grow into approximately 5-nm-period Al0.70In0.30N/Al0.74In0.26N {<inline-formula><alternatives><tex-math>$$10\stackrel{-}{1}2$$</tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mn>10</mml:mn> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> </mml:mover> <mml:mn>2</mml:mn> </mml:mrow> </mml:math></alternatives></inline-formula>} superlattices as step-flow growth progresses. Spatially resolved cathodoluminescence spectra identify the emissions from particular structures.

  32. Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process International-journal Peer-reviewed

    K. Shima, K. Furusawa, S. F. Chichibu

    Applied Physics Letters　117　(7)　071103-1-6　2020/08/17

    Publisher: AIP Publishing

    DOI： 10.1063/5.0011662 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  33. Impact of high-temperature implantation of Mg ions into GaN International-journal Peer-reviewed

    Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano

    Japanese Journal of Applied Physics　59　(5)　056502-1-7　2020/05/01

    Publisher: IOP Publishing

    DOI： 10.35848/1347-4065/ab8b3d 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  34. Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave International-journal Peer-reviewed

    Daisuke Tomida, Quanxi Bao, Makoto Saito, Ryu Osanai, Kohei Shima, Kazunobu Kojima, Tohru Ishiguro, Shigefusa F. Chichibu

    Applied Physics Express　13　(5)　055505-1-5　2020/04

  35. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors International-journal Invited

    Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shoji Ishibashi, Akira Uedono

    Proceedings of SPIE　11280　(112800B)　112800B-1-10　2020/02

    Publisher: SPIE

    DOI： 10.1117/12.2545409 　

  36. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature International-journal Peer-reviewed

    M. Takahashi, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S. F. Chichibu, K. J. Chen, H. Amano

    Physica Status Solidi B　256　(4)　1900554-1-7　2019/12

    DOI： 10.1002/pssb.201900554 　

    ISSN： 0370-1972

    eISSN： 1521-3951

  37. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes International-journal

    Kohei Shima, Kazunobu Kojima, Akira Uedono, Shigefusa F. Chichibu

    Proceedings of IWJT2019　1-4　2019/07

    Publisher: IEEE

    DOI： 10.23919/IWJT.2019.8802886 　

  38. Identification of Film-Forming Species during SiC-CVD of CH3SiCl3/H2 by Exploiting Deep Microtrenches International-journal Peer-reviewed

    Kohei Shima, Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki

    ECS Journal of Solid State Science and Technology　8　P423-P429　2019/07

    DOI： 10.1149/2.0191908jss 　

    ISSN： 2162-8777 2162-8769

  39. Annealing behavior of vacancy-type defects in Mg- and H-implanted GaN studied using monoenergetic positron beam International-journal International-coauthorship Peer-reviewed

    Akira Uedono, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Werner Egger, Tonjes Koschine, Christoph Hugenschmidt, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi

    Physica Status Solidi B　256　1900104-1-1900104-12　2019/05

    DOI： 10.1002/pssb.201900104 　

  40. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures International-journal Peer-reviewed

    S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, A. Uedono

    Japanese Journal of Applied Physics　58(SC)　SC0802-1-SC0802-10　2019/05

    DOI： 10.7567/1347-4065/ab0d06 　

  41. Room-temperature photoluminescence lifetime for the near-band-edge emission of (000<(1))over bar> p-type GaN fabricated by sequential ion-implantation of Mg and H International-journal Peer-reviewed

    Shima K, Iguchi H, Narita T, Kataoka K, Kojima K, Uedono A, Chichibu S. F

    Applied Physics Letters　113　(19)　2018/11

    DOI： 10.1063/1.5050967 　

    ISSN： 0003-6951

  42. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate International-journal Peer-reviewed

    S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, A. Uedono

    Applied Physics Letters　112　(21)　211901-1-5　2018/05/21

    DOI： 10.1063/1.5030645 　

    ISSN： 0003-6951

  43. Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels International-journal Peer-reviewed

    Kohei Shima, Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS　56　(6)　06HE02-1-06HE02-6　2017/06

    DOI： 10.7567/JJAP.56.06HE02 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  44. Design of chemical vapor infiltration process for the production of dense ceramic matrix composites

    Kohei SHIMA

    Doctoral thesis (in Japanese), Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo　1-210　2017/03

    DOI： 10.15083/00075752 　

    More details Close

    The purpose of this study is to develop a chemical vapor infiltration (CVI) process to produce dense SiC/SiC ceramic matrix composite (CMC), which is expected to be a next-generation material in the aerospace field, and to improve the design flexibility of the material. The CVI process is a process to integrate and densify SiC fiber fabrics by depositing SiC on SiC fibers coated with a BN interfacial layer. Although the CVI process offers superior SiC infiltration conformality compared to melt impregnation and liquid-phase impregnation processes, it is currently unable to infiltrate turbine components with a wall thickness on the centimeter scale completely and uniformly. In addition, the CVI process is generally a long process requiring several hundred hours to complete, and thus requires both densification and a reduction in process time. In order to achieve both conformality and high speed of SiC infiltration, it is necessary to understand the elementary processes and reaction rates of gas-phase and surface reactions in the CVI process. In particular, the reaction mechanism at the surface is very complex and cannot be predicted by computer simulation as accurately as the gas-phase reactions, but must be investigated experimentally. Surface reactions can be further classified into an initial SiC growth phase on a BN surface and a continuous SiC growth phase on a SiC surface. However, these problems have not been systematically understood or addressed. Although many studies have been conducted on the continuous growth of the CVI process, the measurement accuracy of the sticking probability and partial pressure of the film-forming species is low due to the limitations of experimental techniques. Therefore, the velocity distribution of SiC film formation in the CVI furnace and the impregnation behavior of fabrics have not been well explained. Therefore, this study focuses on modeling the reaction mechanisms of initial and continuous growth in the CVI process. The sequence of the research is as follows. First, a new test substrate was developed to improve the accuracy of the sticking probability analysis. Next, the sticking probabilities of film-forming species during the continuous growth phase were precisely measured using this test substrate. This refined the continuous growth model of the CVI process and led to a process design guideline for achieving both uniformity and high speed of implantation. Next, based on the continuous growth model, we worked on modeling the initial growth of the CVI process at the BN surface. This led to a process design guideline for improving CVI infiltration conformality from the viewpoint of initial growth. In addition to optimizing the CVI process conditions, a new CVI process was developed to eliminate film formation paths that significantly inhibit infiltration conformality as revealed by the continuous growth model. Through these studies, we have logically derived an optimal CVI process design guideline that achieves both conformality and high speed. Details of the experimental results (Chapters 3-6 of the paper) are presented below. In Chapter 3, a test substrate with microchannels of ultra-high aspect ratio (depth/pore diameter ratio) was developed to understand CVI film formation phenomena in preforms. The simple structure and well-defined dimensions of the test substrate make it more suitable than woven fabrics for understanding the elementary processes of CVI surface reactions and for precisely measuring sticking probabilities. This chapter demonstrates the usefulness of the test substrate not only for the CVI process for CMC production, but also for all gas-phase film-forming processes aiming at uniform film formation on the inner walls of deep 3D structures, which have been extensively studied in recent years. As a result, the test substrate has an aspect ratio nearly 100 times higher than that of conventional test substrates, making it useful for identifying previously unobserved film formation paths and for precise measurement of sticking probabilities in the low 10^-6 range. In addition, the film can be deposited uniformly in the depth direction on the inner wall of the microchannel with any substrate material using any method, and the physicochemical properties of the deposited film can be analyzed by various methods by disassembling the substrate after film deposition. In Chapter 4, we measured the number of film-forming species, sticking probability, and partial pressure using test substrates to refine the reaction model for continuous growth. By increasing the aspect ratio of the test substrate, it was possible to measure low sticking probabilities more precisely than with conventional methods. The results identified two types of film-forming species, MTS (raw material) and reaction intermediates of MTS decomposed in the gas phase, respectively; MTS has a low sticking probability and is suitable for conformal infiltration, while the intermediates have a 1000 times higher sticking probability than MTS and are a significant cause of conformality loss. In addition, it was found that in the region where the aspect ratio exceeds several hundred, the residual Cl on the film-forming surface inhibits the formation of MTS, and the apparent sticking probability decreases by a factor of one-tenth. The sticking probabilities of MTS and intermediates were thermally active with respect to temperature and showed a first-order response to partial pressure. Therefore, the policy of decreasing the temperature to improve infiltration conformality while increasing the partial pressure of the raw material to improve the speed of infiltration was obtained. The policy of simply increasing the partial pressure of the feedstock was clarified as a result of identifying the direct reaction path of the MTS deposition. In addition to the above studies on the reaction rate, the physicochemical properties of the SiC film formed inside the preform were also investigated. Using this test substrate, we measured the chemical composition, crystallinity, and surface roughness inside the preform, which had not been possible before. Such studies provide useful information for narrowing the process window. Finally, when targeting the impregnation of 3D woven fabrics used in turbine components, it was shown that the time required for infiltration could be reduced while maintaining uniformity by adopting high material partial pressure conditions. In Chapter 5, the initial growth of SiC-CVI on a BN surface, which has not been studied before, is modeled by utilizing ultra-high aspect ratio microchannels. Due to the poor wettability of BN and SiC in terms of material properties, the SiC-CVI process on a BN substrate involves three-dimensional nucleation in the Volmer-Weber mode. In addition, problems such as selective incubation time (delay time) from the middle to the bottom of the 3D structure and C-rich film formation at the interface between the SiC film and the BN substrate were observed in practice. The selective incubation time from the middle to the bottom of the 3D structure was found to interfere with the CVI conformality. On the other hand, the formation of C-rich films is likely to cause a decrease in the oxidation resistance of CMCs. To solve these two problems, the CVI process was optimally designed by going back to the initial nucleation model. The incubation time was solved by increasing the feedstock partial pressure, and the generation of films with excess C composition was solved by reducing the film formation temperature. It was demonstrated that the two problems can be solved simultaneously by using high feedstock partial pressure and low temperature process conditions. Therefore, a new process design guideline that modulates the CVI process conditions during the initial and continuous growth stages was logically derived. In Chapter 6, we developed a new CVI process that not only optimizes the CVI process conditions but also eliminates intermediate film-forming species that significantly interfere with conformality. Specifically, a nonwoven fabric (felt) with low fiber volume content is wrapped around the preform as a sacrificial layer to trap the intermediate film species. Because intermediate film species have a 1,000-fold higher sticking probability than MTS, optimal design of the specific surface area and thickness of the sacrificial layer enables nearly 100% removal of intermediate film species and 80% penetration of MTS film species. The sacrificial layer was placed on top of the test substrate, and the trapping rate of the film-forming species was measured from changes in the rate and uniformity of the SiC film deposited in the pores of the test substrate. The results demonstrated that almost 100% of the intermediate film species could be removed as predicted. The removal of the intermediate film species improves the uniformity by a factor of up to two compared to the case where the intermediate film species are not removed. In addition, a one-dimensional oriented CMC (mini-composite) with improved CVI conformality using a sacrificial layer was fabricated and its material properties were evaluated. The results showed that even when the total amount of CVI matrix was the same, the fracture strength tended to improve as the uniformity of the amount of CVI matrix deposited from the surface to the depth of the mini-composite increased. Therefore, the control of conformality by the sacrificial layer may increase the design flexibility of SiC/SiC ceramic matrix composites in the future. As described above, by modeling the surface reaction of the CVI process, we succeeded in designing a rational process that improves conformality by up to a factor of two and reduces process time. Furthermore, we have shown that controlling the densification of CMCs can increase the design freedom of future CMCs. 【Related publications】 [9] "Surface reaction kinetics of chemical vapor infiltration of SiC from CH3SiCl3/H2 studied using ultradeep microchannels", Submitted to ACS Applied Materials & Interfaces. K. Shima, Y. Otaka, N. Sato, Y. Funato, H. Sugiura, T. Nakahara, Y. Fukushima, T. Momose, and Y. Shimogaki [8] "Kinetic Study on Heterogeneous Nucleation and Incubation Period during Chemical Vapor Deposition of Silicon Carbide", The Journal of Chemical Physics 158, 124704 (2023). [doi.org/10.1063/5.0133157] K. Shima, Y. Otaka, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki. [7] "Identifying the mechanism of formation of chlorinated silane polymer by-products during chemical vapor infiltration of SiC from CH3SiCl3/H2", International Journal of Chemical Kinetics 54, 300 (2022). [doi.org/10.1002/kin.21559] N. Sato, Y. Fukushima, K. Shima, Y. Funato, T. Momose, M. Koshi, Y. Shimogaki. [6] "Conformal and stoichiometric chemical vapor deposition of silicon carbide onto ultradeep heterogeneous micropores by controlling the initial nucleation stage", ACS Applied Materials & Interfaces 13, 53009-53020 (2021). [doi.org/10.1021/acsami.1c13117] K. Shima, Y. Otaka, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki. [5] "Elementary gas-phase reactions of radical species during chemical vapor deposition of silicon carbide using CH3SiCl3", International Journal of Chemical Kinetics 53, 638-645 (2021). [doi.org/10.1002/kin.21470] N. Sato, Y. Funato, K. Shima, H. Sugiura, Y. Fukushima, T. Momose, M. Koshi, Y. Shimogaki. [4] "Porous Membranes as Sacrificial Layers Enabling Conformal Chemical Vapor Deposition Involving Multiple Film-Forming Species", ACS Applied Materials & Interfaces 12, 51016-51025 (2020). [doi.org/10.1021/acsami.0c14069] K. Shima, Y. Funato, N. Sato, Y. Fukushima, T. Momose, and Y. Shimogaki. [3] "Identification of film-forming species during SiC-CVD of CH3SiCl3/H2 by exploiting deep microtrenches", ECS Journal of Solid State Science and Technology 8, P423-P429 (2019). [doi.org/10.1149/2.0191908jss] K. Shima, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki. [2] "Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels", Japanese Journal of Applied Physics 56, 06HE02-1-6 (2017). [doi.org/10.7567/JJAP.56.06HE02] K. Shima, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki. [1] "High-aspect-ratio parallel-plate microchannels applicable to kinetic analysis of chemical vapor deposition", Advanced Materials Interfaces 3, 1600254-1-11 (2016). [doi.org/10.1002/admi.201600254] [Selected as back cover] K. Shima, Y. Funato, H. Sugiura, N. Sato, Y. Fukushima, T. Momose, and Y. Shimogaki.

  45. 【Back cover】High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition International-journal Peer-reviewed

    Kohei Shima, Yuichi Funato, Hidetoshi Sugiura, Noboru Sato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki

    ADVANCED MATERIALS INTERFACES　3　(16)　1600254-1--11　2016/08

    DOI： 10.1002/admi.201600254 　

    ISSN： 2196-7350

  46. Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System International-journal Peer-reviewed

    K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    Proceedings of 32nd Annual Advanced Metallization Conference　2015/08

  47. 【招待講演】CVD/ALDを用いたCu(Mn)/Co(W)配線システムの構築と３次元アトムプローブによるサブナノ構造・バリヤ性評価 Invited

    嶋紘平, 涂远, 韓斌, 高見澤悠, 清水秀治, 清水康雄, 百瀬健, 井上耕治, 永井康介, 霜垣幸浩

    信学技報、電子情報通信学会技術研究報告　114　39-44　2015/03

  48. Study on the Adhesion Strength of CVD-Cu Films with ALD-Co(W) Underlayers Made Using Amidinato Precursors International-journal Peer-reviewed

    Kohei Shima, Hideharu Shimizu, Takeshi Momose, Yukihiro Shimogaki

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY　4　(2)　P20-P29　2015

    DOI： 10.1149/2.0061502jss 　

    ISSN： 2162-8769

  49. Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect International-journal Peer-reviewed

    H. Shimizu, K. Shima, Y. Suzuki, T. Momose, Y. Shimogaki

    JOURNAL OF MATERIALS CHEMISTRY C　3　(11)　2500-2510　2015

    DOI： 10.1039/c4tc01088d 　

    ISSN： 2050-7526

    eISSN： 2050-7534

  50. Comparative Study on Cu-CVD Nucleation Using beta-diketonato and Amidinato Precursors for Sub-10-nm-Thick Continuous Film Growth International-journal Peer-reviewed

    Kohei Shima, Hideharu Shimizu, Takeshi Momose, Yukihiro Shimogaki

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY　4　(8)　P305-P313　2015

    DOI： 10.1149/2.0061508jss 　

    ISSN： 2162-8769

  51. Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography International-journal Peer-reviewed

    K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    APPLIED PHYSICS LETTERS　105　(13)　133512-1-5　2014/09

    DOI： 10.1063/1.4896961 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  52. Study on the Adhesion Strength of CVD-Cu Films with CVD/ALD-Co(W) Underlayers Made Using Carbonyl Precursors International-journal Peer-reviewed

    Kohei Shima, Hideharu Shimizu, Takeshi Momose, Yukihiro Shimogaki

    ECS SOLID STATE LETTERS　3　(2)　P20-P22　2014

    DOI： 10.1149/2.005402ssl 　

    ISSN： 2162-8742

  53. Self-Assembled Nano-Stuffing Structure in CVD and ALD Co(W) Films as a Single-Layered Barrier/Liner for Future Cu-Interconnects International-journal International-coauthorship Peer-reviewed

    Hideharu Shimizu, Akihito Kumamoto, Kohei Shima, Yoshihiko Kobayashi, Takeshi Momose, Takeshi Nogami, Yukihiro Shimogaki

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY　2　(11)　P471-P477　2013

    DOI： 10.1149/2.029311jss 　

    ISSN： 2162-8769

  54. ALD/CVDによる次世代Cu配線用単層バリヤ/ライナーCo(W)膜

    清水秀治, 嶋紘平, 百瀬健, 小林芳彦, 霜垣幸浩

    信学技報、電子情報通信学会技術研究報告　111　25-29　2012/03

  55. Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects International-journal International-coauthorship

    Hideharu Shimizu, Henry Wojcik, Kohei Shima, Yoshihiko Kobayashi, Takeshi Momose, Johann W. Bartha, Yukihiro Shimogaki

    2012 IEEE International Interconnect Technology Conference, IITC 2012　2012

    DOI： 10.1109/IITC.2012.6251657 　

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Books and Other Publications 2

  1. 全方位フォトルミネセンス（ODPL）分光法を用いたGaN自立結晶の評価

    小島一信, 嶋紘平, 秩父重英

    S&T出版「次世代パワーエレクトロニクスの課題と評価技術」　2022/07

    ISBN: 9784907002930

  2. 大口径・高純度GaN単結晶基板の量産法と結晶評価

    栗本浩平, 包全喜, 三川豊, 嶋紘平, 石黒徹, 秩父重英

    S&T出版「次世代パワーエレクトロニクスの課題と評価技術」　2022/07

    ISBN: 9784907002930

Presentations 276

  1. サファイア基板上rs-MgO薄膜の高温成長

    木村航介, 川端重温, 嶋紘平, 松尾浩一, 内田浩二, 大野篤史, 高橋勲, 荒木努, 秩父重英, 金子健太郎

    第86回応用物理学会秋季学術講演会　2025/09/07

  2. 電子線照射GaNのルミネッセンス評価

    嶋紘平, 堀田昌宏, 須田淳, 石橋章司, 上殿明良, 秩父重英

    第86回応用物理学会秋季学術講演会　2025/09/07

  3. サファイア基板上にCVD成長させた層状BN薄膜の陰極線蛍光評価

    秩父重英, 粕谷拓生, 辻谷陽仁, 原和彦, 嶋紘平

    第86回応用物理学会秋季学術講演会　2025/09/07

  4. 275 nm帯AlGaN量子井戸LEDの劣化対策

    秩父重英, 嶋紘平, 奥野浩司, 大矢昌輝, 宮﨑敦嗣, 坊山晋也, 齋藤義樹, 本田善央, 天野浩, 石黒永孝, 竹内哲也

    第86回応用物理学会秋季学術講演会　2025/09/07

  5. Transient Process Conditions during Ammonothermal Crystal Growth of GaN International-coauthorship

    S. C. Schimmel, D. Tomida, K. Shima, T. Ishiguro, Y. Honda, S. F. Chichibu, H. Amano

    第86回応用物理学会秋季学術講演会　2025/09/07

  6. 低ドーズSi, Al, Nイオン注入GaNのルミネッセンス評価

    嶋紘平, 堀田昌宏, 須田淳, 石橋章司, 上殿明良, 秩父重英

    第86回応用物理学会秋季学術講演会　2025/09/07

  7. Cathodoluminescence studies of sp2-hybridized BN thin films and monolayers grown by vapor phase epitaxy International-presentation International-coauthorship Invited

    K. Shima, K. Hara, T. S. Cheng, C. J. Mellor, P. H. Beton, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu

    The Society of Photo-Optical Instrumentation Engineers (SPIE), Optics and Photonics　2025/08/03

  8. サファイア基板上への岩塩構造MgZnO薄膜成長における成長温度・降温速度の効果

    木村航介, 嶋紘平, 松尾浩一, 内田浩二, 大野篤史, 秩父重英, 金子健太郎

    第17回ナノ構造エピタキシャル成長講演会　2025/07/17

  9. 長寿命高効率深紫外LEDの開発 Invited

    齋藤義樹, 宮﨑敦嗣, 坊山晋也, 三輪浩士, 奥野浩司, 大矢昌輝, 久志本真希, 本田善央, 天野浩, 石黒英孝, 竹内哲也, 嶋紘平, 秩父重英

    第17回ナノ構造エピタキシャル成長講演会　2025/07/17

  10. Cathodoluminescence spectroscopy of layered-structure BN thin films grown by metalorganic vapor phase epitaxy using tris(dimethylamino)borane International-presentation

    K. Shima, H. Tsujitani, S. F. Chichibu

    The 15th International Conference on Nitride Semiconductors (ICNS-15)　2025/07/06

  11. Cathodoluminescence studies of layered-structure BN epilayers grown by chemical vapor deposition using carbon-free molecules International-presentation

    S. F. Chichibu, H. Tsujitani, S. Takaya, T. Suzuki, K. Hara, K. Shima

    The 15th International Conference on Nitride Semiconductors (ICNS-15)　2025/07/06

  12. Annealing behaviors of vacancies and their impact on dopant activation in ion-implanted GaN studied by positron annihilation International-presentation Invited

    A. Uedono, K. Shima, S. F. Chichibu, S. Ishibashi

    The 15th International Conference on Nitride Semiconductors (ICNS-15)　2025/07/06

  13. Improved device lifetime of 275-nm-band AlGaN MQW LEDs by decelerating the degradation of carrier injection efficiency International-presentation Invited

    S. F. Chichibu, K. Okuno, M. Oya, A. Miyazaki, S. Boyama, Y. Saito, Y. Honda, H. Amano, H. Ishiguro, T. Takeuchi, K. Shima

    The 15th International Conference on Nitride Semiconductors (ICNS-15)　2025/07/06

  14. Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements International-presentation International-coauthorship

    K. Shima, T. Narita, A. Uedono, M. Bockowski, J. Suda, T. Kachi, S. F. Chichibu

    The 15th International Conference on Nitride Semiconductors (ICNS-15)　2025/07/06

  15. Formation of layered polytypes during the thin film growth of boron nitride by chemical vapor deposition using boron trichloride as a boron source International-presentation

    K. Hara, S. Ota, R. Aoike, A. Takemura, H. Nakano, H. Kominami, K. Shima, S. F. Chichibu

    The 15th International Conference on Nitride Semiconductors (ICNS-15)　2025/07/06

  16. 低圧水銀灯を代替するMgZnO真空紫外固体光源の開発

    木村航介, 嶋紘平, 松尾浩一, 内田浩二, 大野篤史, 秩父重英, 金子健太郎

    立命館科学技術振興会（ASTER）フォーラム2025　2025/06/13

  17. Characterization of vacancy-type defects in Mg- and N-implanted GaN by using a monoenergetic positron beam International-presentation International-coauthorship

    A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, K. Sierakowski, M. Bockowski

    22nd International Workshop on Junction Technology (IWJT2025)　2025/06/05

  18. 超高圧アニール処理したMgイオン注入GaNの時間分解フォトルミネッセンス評価

    嶋紘平, 田中亮, 高島信也, 上野勝典, 石橋章司, 上殿明良, 秩父重英

    第72回応用物理学会春季学術講演会　2025/03/14

  19. サファイア基板上岩塩構造MgZnO 薄膜成長における徐冷の効果

    木村航介, 嶋紘平, 松尾浩一, 内田浩二, 大野篤史, 秩父重英, 金子健太郎

    第72回応用物理学会春季学術講演会　2025/03/14

  20. HVPE 成長Mg 添加p 型GaN のフォトルミネッセンススペクトル(II)

    秩父重英, 大西一生, 渡邉浩崇, 新田州吾, 本田善央, 天野浩, 上殿明良, 石橋章司, 嶋紘平

    第72回応用物理学会春季学術講演会　2025/03/14

  21. HVPE 成長Si 添加ホモエピタキシャルAlN の発光特性 International-coauthorship

    秩父重英, 菊地清, Baxter Moody, 三田清二, Ramon Collazo, Zlatko Sitar, 熊谷義直, 石橋章司, 上殿明良, 嶋紘平

    第72回応用物理学会春季学術講演会　2025/03/14

  22. サファイア基板上に有機金属気相成長させたBN薄膜の深紫外発光特性

    嶋紘平, 辻谷陽仁, 秩父重英

    第72回応用物理学会春季学術講演会　2025/03/14

  23. 超高圧アニール処理した無添加およびイオン注入GaNのフォトルミネッセンス評価 International-coauthorship

    嶋紘平, 石橋章司, 上殿明良, Michal Bockowski, 須田淳, 加地徹, 秩父重英

    第72回応用物理学会春季学術講演会　2025/03/14

  24. Roles of vacancy complexes on the output-power degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes International-presentation Invited

    S. F. Chichibu, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, Y. Saito, Y. Furusawa, A. Tanaka, R. Tsukamoto, M. Kushimoto, Y. Honda, H. Amano, H. Ishiguro, T. Takeuchi, K. Shima

    17th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2025)/18th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2025)　2025/03/03

  25. Room-temperature cavity-polaritons in planar ZnO microcavities fabricated via a top-down process using bulk ZnO single crystals International-presentation

    K. Shima, K. Furusawa, S. F. Chichibu

    11th International Workshop on Semiconductor Oxides (IWSO-2025)　2025/03/02

  26. Origins and dynamic properties of midgap recombination centers in ZnO International-presentation Invited

    S. F. Chichibu, A. Uedono, S. Ishibashi, K. Shima

    11th International Workshop on Semiconductor Oxides (IWSO-2025)　2025/03/02

  27. Power degradation mechanism of UV-C LEDs under current stress International-presentation Invited

    Y. Honda, S. F. Chichibu, K. Shima, A. Miyazaki, S. Boyama, K. Okuno, Y. Saito, A. Tanaka, T. Takeuchi, M. Kushimoto, H. Amano

    The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2025　2025/01/25

  28. Development for long lifetime and high efficiency DUV LEDs International-presentation Invited

    Y. Saito, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, K. Kataoka, T. Narita, K. Horibuchi, M. Kushimoto, Y. Honda, H. Amano, H. Ishiguro, T. Takeuchi, K. Shima, S. F. Chichibu

    The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2025　2025/01/25

  29. Zn1-xMgxO ナノロッドのサファイア基板上へのスパッタリング成長：3次元島バッファー層の効果

    大津山裕生, 嶋紘平, 湯上貴文, 成重椋太, 秩父重英, 板垣奈穂

    第24回東北大学多元物質科学研究所研究発表会　2024/12/12

  30. 多形を含む層状窒化ホウ素半導体薄膜のカソードルミネッセンススペクトル

    辻谷陽仁, 嶋紘平, 原和彦, 秩父重英

    第24回東北大学多元物質科学研究所研究発表会　2024/12/12

  31. ダイヤモンドとウルツ構造Al, Ga酸窒化物との界面バンド接合

    河野省三, 成田憲人, 浅野雄大, 太田康介, 嶋紘平, 秩父重英, 川原田洋

    第38回ダイヤモンドシンポジウム　2024/11/20

  32. Minority carrier capture coefficients of major midgap recombination centers in the state-of-the-art GaN substrates, epilayers, and Mg-implanted layers International-presentation

    S. F. Chichibu, K. Shima, A. Uedono, S. Ishibashi, H. Iguchi, T. Narita, K. Kataoka, R. Tanaka, S. Takashima, K. Ueno, M. Edo, H. Watanabe, A. Tanaka, Y. Honda, J. Suda, H. Amano, T. Kachi, T. Nabatame, Y. Irokawa, Y. Koide

    International Workshop on Nitride Semiconductors 2024 (IWN2024)　2024/11/03

  33. Room-temperature photoluminescence lifetimes of Mg-doped p-type GaN layers grown by halide vapor phase epitaxy International-presentation

    S. F. Chichibu, K. Ohnishi, H. Watanabe, S. Nitta, Y. Honda, H. Amano, A. Uedono, S. Ishibashi, K. Shima

    International Workshop on Nitride Semiconductors 2024 (IWN2024)　2024/11/03

  34. Spatio-time-resolved cathodoluminescence study of InGaN/GaN multiquantum shells International-presentation

    K. Shima, W. Lu, T. Takeuchi, S. Kamiyama, S. F. Chichibu

    International Workshop on Nitride Semiconductors 2024 (IWN2024)　2024/11/03

  35. Catalyst-free sputtering growth of Zn1-xMgxO nanorods on c-sapphire substrate using 3D buffer layers International-presentation

    H. Otsuyama, K. Shima, K. Yataka, T. Yunoue, S. F. Chichibu, N. Itagaki

    The 10th International Symposium on Surface Science (ISSS-10)　2024/10/20

  36. エミッション顕微鏡を用いたUV-C LEDにおける中長期劣化の観察

    本田善央, 古澤優太, 田中敦之, 塚本涼子, 宮﨑敦嗣, 坊山晋也, 奥野浩司, 齋藤義樹, 嶋紘平, 秩父重英, 石黒永孝, 竹内哲也, 久志本真希, 天野浩

    第85回応用物理学会秋季学術講演会　2024/09/16

  37. Cathodoluminescence studies of hexagonal BN polytypes and monolayer BN International-presentation International-coauthorship Invited

    S. F. Chichibu, K. Hara, T. S. Cheng, C. J. Mellor, P. H. Beton, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, K. Shima

    2024 Fall Meeting of the European Materials Research Society (E-MRS)　2024/09/16

  38. 低圧酸性アモノサーマル法によるバルクGaN結晶成長 Invited

    栗本浩平, 包全喜, 三川豊, 斉藤真, 嶋紘平, 石黒徹, 秩父重英

    化学工学会第55回秋季大会　2024/09/11

  39. 超臨界アンモニアを用いた窒化物材料の作製 International-coauthorship Invited

    冨田大輔, Saskia Schimmel, 本田善央, 天野浩, 嶋紘平, 石黒徹, 秩父重英, 斉藤真, 栗本浩平, 包全喜

    第37回日本セラミックス協会秋季シンポジウム　2024/09/10

  40. ワイドギャップ半導体の空孔型欠陥と発光ダイナミクス計測－ZnOとGaNの類似点と相違点－ Invited

    秩父重英, 嶋紘平, 上殿明良, 石橋章司

    透明酸化物光・電子材料研究会, 第9回（2024年度第2回）研究会チュートリアル「材料設計・作製・物性評価の基礎および応用」　2024/07/11

  41. 275 nm帯AlGaN LEDの初期劣化機構 Invited

    秩父重英, 奥野浩司, 大矢昌輝, 齋藤義樹, 石黒永孝, 竹内哲也, 嶋紘平

    応用電子物性分科会/結晶工学分科会 合同研究会「窒化物半導体発光デバイスの最前線」　2024/07/02

  42. Roles of vacancy complexes on the luminescence spectra of Si-doped AlN layers grown by HVPE on (0001) AlN substrates prepared by PVT International-presentation International-coauthorship

    S. F. Chichibu, K. Kikuchi, B. Moody, S. Mita, R. Collazo, Z. Sitar, Y. Kumagai, S. Ishibashi, A. Uedono, K. Shima

    7th International Workshop on UV Materials and Devices (IWUMD-IV)　2024/06/02

  43. Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride grown on a highly oriented pyrolytic graphite substrate International-presentation International-coauthorship

    K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu

    7th International Workshop on UV Materials and Devices (IWUMD-IV)　2024/06/02

  44. Developments in highly efficient and long-life AlGaN-based UVC LEDs International-presentation Invited

    Y. Saito, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, K. Kataoka, T. Narita, K. Horibuchi, M. Kushimoto, Y. Honda, H. Amano, H. Ishiguro, T. Takeuchi, K. Shima, S. F. Chichibu

    7th International Workshop on UV Materials and Devices (IWUMD-IV)　2024/06/02

  45. 275 nm 帯AlGaN 量子井戸LED の初期劣化について

    秩父重英, 奥野浩司, 大矢昌輝, 齋藤義樹, 石黒永孝, 竹内哲也, 嶋紘平

    第16回ナノ構造エピタキシャル成長講演会　2024/05/30

  46. 酸性アモノサーマル法の低圧化と大口径GaNバルク結晶作製技術の進展 Invited

    石黒徹, 斉藤真, 包全喜, 栗本浩平, 冨田大輔, 嶋紘平, 秩父重英

    第16回ナノ構造エピタキシャル成長講演会　2024/05/30

  47. Mgイオン注入GaNにおける空孔型欠陥のルミネッセンス評価 Invited

    嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良, 秩父重英

    第16回ナノ構造エピタキシャル成長講演会　2024/05/30

  48. Technology development for long life and high efficiency DUV LEDs International-presentation Invited

    Y. Saito, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, K. Kataoka, T. Narita, K. Horibuchi, M. Kushimoto, Y. Honda, H. Amano, H. Ishiguro, T. Takeuchi, K. Shima, S. F. Chichibu

    The 10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'24)　2024/04/24

  49. Short-term degradation mechanisms of 275-nm-band AlGaN quantum well deep-ultraviolet light emitting diodes fabricated on a sapphire substrate International-presentation Invited

    S. F. Chichibu, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, K. Shima

    The 10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'24)　2024/04/24

  50. 275 nm 帯AlGaN 量子井戸LED の初期劣化機構(II)

    秩父重英, 嶋紘平, 奥野浩司, 大矢昌輝, 齋藤義樹, 本田善央, 天野浩, 石黒永孝, 竹内哲也

    第71回応用物理学会春季学術講演会　2024/03/22

  51. BCl3/NH3を用いてサファイア基板上にCVD成長させたhBN薄膜および多形BNセグメントの陰極線蛍光評価

    嶋紘平, 粕谷拓生, 髙屋竣大, 辻谷陽仁, 原和彦, 秩父重英

    第71回応用物理学会春季学術講演会　2024/03/22

  52. GaN 成長層･Mg イオン注入層の室温フォトルミネッセンス寿命 (III)

    秩父重英, 嶋紘平, 上殿明良, 石橋章司, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 渡邉浩崇, 田中敦之, 本田善央, 須田淳, 天野浩, 加地徹, 生田目俊秀, 色川芳宏, 小出康夫

    第71回応用物理学会春季学術講演会　2024/03/22

  53. GaN 成長層･Mg イオン注入層の室温フォトルミネッセンス寿命 (II)

    秩父重英, 嶋紘平, 上殿明良, 石橋章司, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 渡邉浩崇, 田中敦之, 本田善央, 須田淳, 天野浩, 加地徹, 生田目俊秀, 色川芳宏, 小出康夫

    第71回応用物理学会春季学術講演会　2024/03/22

  54. 低圧酸性アモノサーマル成長GaNのミッドギャップ再結合過程

    嶋紘平, 上殿明良, 石橋章司, 石黒徹, 秩父重英

    第71回応用物理学会春季学術講演会　2024/03/22

  55. Operation-induced short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes on a sapphire substrate International-presentation Invited

    S. F. Chichibu, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, K. Shima

    The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2024　2024/01/27

  56. Low-pressure acidic ammonothermal (LPAAT) growth of large diameter nearly bowing-free GaN crystals International-presentation Invited

    S. F. Chichibu, K. Kurimoto, Q. Bao, Y. Mikawa, M. Saito, D. Tomida, T. Ishiguro, K. Shima

    The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2024　2024/01/27

  57. Operation-induced short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate International-presentation Invited

    S. F. Chichibu, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, K. Shima

    The 49th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-49)　2024/01/14

  58. Polishing and etching damages of hydrothermally grown ZnO single crystals studied using time-resolved photoluminescence spectroscopy International-presentation

    K. Shima, T. Kasuya, S. F. Chichibu

    Materials Research Meeting 2023 (MRM2023)　2023/12/11

  59. フォトルミネッセンス法によるZnOのプロセス誘起欠陥の評価

    Leiyu Wu, 嶋紘平, 秩父重英

    第23回東北大学多元物質科学研究所研究発表会　2023/12/07

  60. Mgイオン注入GaN中の空孔型欠陥がルミネッセンス特性に与える影響の評価 Invited

    嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良, 秩父重英

    応用物理学会九州支部特別講演会　2023/11/12

  61. Recent developments for high efficiency for deep UV LEDs International-presentation Invited

    Y. Saito, K. Nagata, A. Miyazaki, S. Boyama, K. Okuno, M. Oya, K. Kataoka, T. Narita, K. Horibuchi, M. Kushimoto, Y. Honda, H. Amano, H. Ishiguro, T. Takeuchi, K. Shima, S. F. Chichibu

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  62. Impacts of vacancy clusters on the luminescence dynamics in Mg-implanted GaN on GaN structures International-presentation International-coauthorship Invited

    S. F. Chichibu, A. Uedono, H. Iguchi, T. Narita, K. Kataoka, M. Bockowski, J. Suda, T. Kachi, S. Takashima, R. Tanaka, K. Ueno, M. Edo, S. Ishibashi, K. Shima

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  63. Effect on QWs Qualities of Thickness of Homoepitaxial AlN on AlN/sapphire Prepared by Sputtering and High-temperature Annealing International-presentation

    R. Akaike, K. Uesugi, K. Shima, S. F. Chichibu, A. Uedono, H. Miyake

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  64. Optical Characteristics of BGaN Films Using Oblique Polishing International-presentation

    R. Ozeki, D. Nakamura, R. Kudo, T. Ito, K. Shima, S. F. Chichibu, T. Nakano

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  65. Spatially resolved cathodoluminescence studies of graphitic BN segments formed in hexagonal BN epilayers grown on a (0001) sapphire by CVD International-presentation

    S. F. Chichibu, N. Umehara, K. Hara, K. Shima

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  66. Short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light emitting diodes on a sapphire substrate International-presentation

    S. F. Chichibu, K. Nagata, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi, K. Shima

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  67. Wafer-scale characterization of mosaics and the impact on point defects in GaN studied using 2D birefringence and photoluminescence measurements International-presentation

    K. Shima, S. F. Chichibu

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  68. Luminescence studies of Mg-implanted and undoped GaN-on-GaN structures processed by ultra-high-pressure annealing International-presentation International-coauthorship

    K. Shima, T. Narita, K. Kataoka, S. Ishibashi, A. Uedono, M. Bockowski, J. Suda, T. Kachi, S. F. Chichibu

    The 14th International Conference on Nitride Semiconductors (ICNS-14)　2023/11/12

  69. Structural, electrical and optical properties of α-In2O3 grown by mist CVD on (0001)α-Al2O3 substrate International-presentation

    T. Yamaguchi, A. Taguchi, K. Shima, T. Nagata, T. Yamamoto, Y. Hayakawa, M. Matsuda, T. Konno, T. Onuma, S. F. Chichibu, H. Honda

    7th International Conference on Advanced Electromaterials (ICAE2023)　2023/10/31

  70. 化学反応を用いるものづくり －殺菌・消毒を行う深紫外線LED－ Invited

    嶋紘平

    本場仙台味噌醤油鑑評会表彰式・70周年記念式典　2023/10/20

  71. HVPE成長Mg添加p型GaNのフォトルミネッセンススペクトル

    秩父重英, 大西一生, 新田州吾, 本田善央, 天野浩, 嶋紘平

    第84回応用物理学会秋季学術講演会　2023/09/19

  72. 二次元複屈折およびフォトルミネッセンス測定によるGaNウエハの結晶モゼイクと点欠陥の評価

    嶋紘平, 秩父重英

    第84回応用物理学会秋季学術講演会　2023/09/19

  73. 斜め研磨加工を用いたBGaN薄膜の光学特性評価

    小関凌也, 中村大輔, 工藤涼兵, 伊藤哲, 嶋紘平, 秩父重英, 中野貴之

    第84回応用物理学会秋季学術講演会　2023/09/19

  74. 炭素フリー原料を用いてサファイア基板にCVD成長させたhBN薄膜に混在する多形BNの空間分解カソードルミネッセンス評価

    秩父重英, 梅原直己, 原和彦, 嶋紘平

    第84回応用物理学会秋季学術講演会　2023/09/19

  75. Ultraviolet luminescence dynamics of hexagonal BN epilayers grown by chemical vapor deposition using carbon-free precursors International-presentation

    T. Kasuya, K. Shima, K. Hara, S. F. Chichibu

    65th Electronic Materials Conference　2023/06/28

  76. Short-term degradation mechanisms of 275-nm-band AlGaN-based deepultraviolet light emitting diodes fabricated on a sapphire substrate International-presentation

    S. F. Chichibu, K. Shima, T. Kasuya, K. Nagata, K. Okuno, M. Oya, Y. Saito, H. Ishiguro, T. Takeuchi

    65th Electronic Materials Conference　2023/06/28

  77. Luminescence studies of bulk GaN crystals grown by the low-pressure acidic ammonothermal method International-presentation

    K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, T. Ishiguro, S. F. Chichibu

    65th Electronic Materials Conference　2023/06/28

  78. 空孔複合体が(Al,Ga)Nの発光特性に与える影響 Invited

    秩父重英, 嶋紘平, 上殿明良

    第15回ナノ構造エピタキシャル成長講演会　2023/06/15

  79. Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N International-presentation

    K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, A. Uedono, S. Ishibashi, S. F. Chichibu

    21st International Workshop on Junction Technology (IWJT2023)　2023/06/08

  80. 280 nm帯AlGaN量子井戸LEDの劣化機構に関する考察

    秩父重英, 嶋紘平, 粕谷拓生, 永田賢吾, 奥野浩司, 齋藤義樹, 石黒永孝, 竹内哲也

    第70回応用物理学会春季学術講演会　2023/03/15

  81. 陰極線励起による単層六方晶BNのバンド端発光の観測 International-coauthorship

    嶋紘平, Tin S. Cheng, Christopher J. Mellor, Peter H. Beton, Christine Elias, Bernard Gil, Guillaume Cassabois, Sergei V. Novikov, 秩父重英

    第70回応用物理学会春季学術講演会　2023/03/15

  82. 炭素フリー原料を用いてサファイア基板上にCVD成長させたhBN薄膜の間接遷移励起子の発光ダイナミクス

    粕谷拓生, 嶋紘平, 梅原直己, 原和彦, 秩父重英

    第70回応用物理学会春季学術講演会　2023/03/15

  83. 反応性イオンエッチングを行ったZnO表面の時間分解フォトルミネッセンス及びX線光電子分光評価

    粕谷拓生, 嶋紘平, 秩父重英

    第70回応用物理学会春季学術講演会　2023/03/15

  84. 赤色発光In0.35Ga0.65N/GaN量子井戸のフォトルミネッセンス寿命 International-coauthorship

    李リヤン, 嶋紘平, 飯田大輔, 大川和宏, 秩父重英

    第70回応用物理学会春季学術講演会　2023/03/15

  85. 可視光透過型デバイス実現に向けたp型NiOエピタキシャル薄膜の電気特性

    橋本侑弥, 杉山睦, 嶋紘平, 秩父重英

    第22回東北大学多元物質科学研究所研究発表会　2022/12/08

  86. 空孔ガイドMg再分配法によるp型イオン注入GaNの少数キャリア寿命の改善

    嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 小島一信, 上殿明良, 石橋章司, 秩父重英

    第22回東北大学多元物質科学研究所研究発表会　2022/12/08

  87. GaNに格子整合するc面AlInN薄膜の室温における非輻射再結合寿命

    李リヤン, 嶋紘平, 山中瑞樹, 江川孝志, 竹内哲也, 三好実人, 石橋章司, 上殿明良, 秩父重英

    第77回応用物理学会東北支部学術講演会　2022/12/01

  88. 時間分解フォトルミネッセンス法によるZnOのプロセス誘起欠陥評価

    粕谷拓生, 嶋紘平, 秩父重英

    応用物理学会結晶工学分科会, 電子材料若手交流会（ISYSE）, 大阪大学大学院工学研究科共催, 「第5回結晶工学×ISYSE合同研究会」　2022/11/18

  89. Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics International-presentation

    T. Nakano, Y. Ota, A. Miyazawa, H. Nakagawa, S. Kawasaki, Y. Ando, Y. Honda, H. Amano, K. Shima, S. F. Chichibu, Y. Inoue, T. Aoki

    International Workshop on Nitride Semiconductors 2022 (IWN2022)　2022/10/09

  90. Near-band-edge recombination in monolayer hBN epitaxial films studied using cathodoluminescence spectroscopy International-presentation International-coauthorship

    K. Shima, C. Elias, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois, S. F. Chichibu

    International Workshop on Nitride Semiconductors 2022 (IWN2022)　2022/10/09

  91. Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg International-presentation

    K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Kojima, A. Uedono, S. Ishibashi, S. F. Chichibu

    International Workshop on Nitride Semiconductors 2022 (IWN2022)　2022/10/09

  92. Low-pressure acidic ammonothermal (LPAAT) growth of 2-inch-diameter bulk GaN crystals International-presentation

    K. Kurimoto, Q. Bao, Y. Mikawa, K. Shima, T. Ishiguro, S. F. Chichibu

    International Workshop on Nitride Semiconductors 2022 (IWN2022)　2022/10/09

  93. Self-formed compositional superlattices in m-plane Al0.7In0.3N alloys on a GaN substrate triggered by atomic ordering of In and Al along the c-axis International-presentation

    S. F. Chichibu, K. Shima, K. Kojima, Y. Kangawa

    International Workshop on Nitride Semiconductors 2022 (IWN2022)　2022/10/09

  94. Emission dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors International-presentation Invited

    S. F. Chichibu, K. Shima, K. Kikuchi, N. Umehara, K. Takiguchi, Y. Ishitani, K. Hara

    International Workshop on Nitride Semiconductors 2022 (IWN2022)　2022/10/09

  95. n型GaN基板・エピタキシャル薄膜の室温フォトルミネッセンス寿命

    秩父重英, 嶋紘平, 小島一信, 上殿明良, 石橋章司, 渡邉浩崇, 田中敦之, 本田善央, 今西正幸, 森勇介, 生田目俊秀, 色川芳宏, 天野浩, 小出康夫

    第83回応用物理学会秋季学術講演会　2022/09/20

  96. 炭素フリー原料を用いてサファイア基板にCVD成長させた多型を含むhBN薄膜における間接遷移励起子の発光ダイナミクス

    秩父重英, 嶋紘平, 菊地清, 梅原直己, 瀧口佳祐, 石谷善博, 原和彦

    第83回応用物理学会秋季学術講演会　2022/09/20

  97. 低圧酸性アモノサーマル成長バルクGaN結晶のルミネッセンス評価(2)

    嶋紘平, 栗本浩平, 包全喜, 三川豊, 石黒徹, 秩父重英

    第83回応用物理学会秋季学術講演会　2022/09/20

  98. 超高圧アニールによるMgイオン注入p型GaNのルミネッセンス評価 International-coauthorship

    嶋紘平, 櫻井秀樹, 石橋章司, 上殿明良, Michal Bockowski, 須田淳, 加地徹, 秩父重英

    第83回応用物理学会秋季学術講演会　2022/09/20

  99. GaNに格子整合するc面AlInN薄膜の室温フォトルミネッセンス寿命

    李リヤン, 嶋紘平, 山中瑞樹, 江川孝志, 竹内哲也, 三好実人, 石橋章司, 上殿明良, 秩父重英

    第83回応用物理学会秋季学術講演会　2022/09/20

  100. 時間分解フォトルミネッセンスによるZnOのプロセス誘起欠陥評価

    粕谷拓生, 嶋紘平, 秩父重英

    第83回応用物理学会秋季学術講演会　2022/09/20

  101. Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures for power devices International-presentation Invited

    S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, R. Tanaka, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, A. Uedono

    Compound Semiconductor Week 2022　2022/06/01

  102. Observation of room-temperature cavity-polaritons in ZnO microcavities fabricated by a top-down process International-presentation

    K. Shima, K. Furusawa, S. F. Chichibu

    2022 Spring Meeting of the European Materials Research Society (E-MRS), Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium　2022/05/30

  103. Luminescence studies of nearly lattice-matched c-plane AlInN/GaN heterostructures International-presentation

    L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. F. Chichibu

    5th International Workshop on UV Materials and Devices (IWUMD-V)　2022/05/23

  104. Reduction of polishing-induced surface recombination centers of ZnO single crystals grown by the hydrothermal method International-presentation

    T. Kasuya, K. Shima, S. F. Chichibu

    5th International Workshop on UV Materials and Devices (IWUMD-V)　2022/05/23

  105. エピタキシャル成長及びイオン注入により作製されたGaN基板上Mg添加 p型GaNの室温フォトルミネッセンス寿命 Invited

    秩父重英, 嶋紘平, 小島一信, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良

    第69回応用物理学会春季学術講演会　2022/03/22

  106. 時間分解PL測定による岩塩構造MgZnOの発光特性の評価

    高坂亘, 小川広太郎, 日下皓也, 金子健太郎, 山口智広, 嶋紘平, 藤田静雄, 本田徹, 秩父重英, 尾沼猛儀

    第69回応用物理学会春季学術講演会　2022/03/22

  107. Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors International-presentation Invited

    S. F. Chichibu, K. Shima, S. Ishibashi, A. Uedono

    Advances in III-Nitride Materials & Photonic Devices (IIIN-MPD), Org. by T. Wernicke, A. Haglund, M. Weyers, S. Einfeldt, and M. Kneissl, Technical University of Berlin, Germany　2022/03/09

  108. Spatially resolved cathodoluminescence studies on α-In2O3 films grown by mist CVD method International-presentation

    A. Taguchi, K. Shima, M. Matsuda, T. Onuma, T. Honda, S. F. Chichibu, T. Yamaguchi

    The 9th Advanced Functional Materials & Devices (AFMD) & The 4th Symposium for Collaborative Research on Energy Science and Technology (SCREST)　2022/03/05

  109. 低圧酸性アモノサーマル法によるGaN単結晶製造技術の開発 Invited

    栗本浩平, 包全喜, 三川豊, 嶋紘平, 石黒徹, 秩父重英

    日本学術振興会R032 産業イノベーションのための結晶成長委員会 キックオフ研究会「ワイドギャップ半導体II」　2022/03/04

  110. Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process International-presentation Invited

    K. Shima, K. Furusawa, S. F. Chichibu

    The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity (IWSingularity 2022) & The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022)　2022/01/13

  111. ミストCVD法により成長したRS-MgZnOにおける深紫外PL寿命の評価

    高坂亘, 工藤幹太, 石井恭平, 小野瑞生, 金子健太郎, 山口智広, 嶋紘平, 小島一信, 藤田静雄, 本田徹, 秩父重英, 尾沼猛儀

    第21回東北大学多元物質科学研究所研究発表会　2021/12/09

  112. BGaNダイオードによる中性子半導体検出器の開発

    中野貴之, 宮澤篤也, 井上翼, 青木徹, 嶋紘平, 秩父重英

    第21回東北大学多元物質科学研究所研究発表会　2021/12/09

  113. c面Al0.82In0.18N/GaN格子整合ヘテロ構造の発光特性

    李リヤン, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 上殿明良, 石橋章司, 竹内哲也, 三好実人, 秩父重英

    第21回東北大学多元物質科学研究所研究発表会　2021/12/09

  114. c面Al0.83In0.17N/GaN格子整合ヘテロ構造の光学特性評価

    李リヤン, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 上殿明良, 石橋章司, 竹内哲也, 三好実人, 秩父重英

    電子情報通信学会レーザ・量子エレクトロニクス研究会/電子デバイス研究会/電子部品・材料研究会　2021/11/25

  115. Impact of growth pressure on the neutron-detection efficiency of BGaN diodes International-presentation

    A. Miyazawa, Y. Ohta, S. Matsukawa, K. Hayashi, H. Nakagawa, S. Kawasaki, Y. Ando, G. Wakabayashi, Y. Honda, H. Amano, K. Shima, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki, T. Nakano

    IEEE Nuclear Science Symposium (NSS) and Medical Imaging Conference (MIC)　2021/10/21

  116. 炭素フリー原料を用いてサファイア基板に気相成長させたh-BN薄膜の空間分解陰極線蛍光評価

    秩父重英, 嶋紘平, 梅原直己, 小島一信, 原和彦

    第82回応用物理学会秋季学術講演会　2021/09/10

  117. 空孔ガイドMg拡散法によるp型イオン注入GaNの空間分解CL評価

    嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 小島一信, 上殿明良, 秩父重英

    第82回応用物理学会秋季学術講演会　2021/09/10

  118. 陽電子消滅を用いたMgイオン注入により形成したp型GaNのMg活性プロセスと空孔型欠陥の研究

    上殿明良, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 嶋紘平, 小島一信, 秩父重英, 石橋章司

    第82回応用物理学会秋季学術講演会　2021/09/10

  119. 高品質GaNシードを用いた低圧酸性アモノサーマル(LPAAT)法によるGaN単結晶成長

    栗本浩平, 包全喜, 三川豊, 冨田大輔, 嶋紘平, 小島一信, 石黒徹, 秩父重英

    第82回応用物理学会秋季学術講演会　2021/09/10

  120. Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors International-presentation Invited

    S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, A. Uedono

    20th International Workshop on Junction Technology (IWJT2021)　2021/06/10

  121. 酸性アモノサーマル法による大口径高品質GaN結晶成長 Invited

    三川豊, 石鍋隆幸, 鏡谷勇二, 包全喜, 栗本浩平, 嶋紘平, 小島一信, 石黒徹, 秩父重英

    ワイドギャップ半導体学会（WideG）第１回研究会「ＷＢＧ材料のバルク結晶成長とウェハ化技術」　2021/05/14

  122. 室温動作ポラリトンレーザの実現に向けたZnO微小共振器の形成 Invited

    秩父重英, 嶋紘平, 小島一信, 古澤健太郎

    第4回固体レーザーの高速探索と機能開発に向けたレーザー材料研究会 -新しい機能を持ったレーザとそれに関連した材料- Smart Combinatorial Technology, Inc.　2021/03/22

  123. InGaN/GaN多重量子殻の時間空間分解カソードルミネッセンス評価

    嶋紘平, Weifang Lu, 小島一信, 上山智, 竹内哲也, 秩父重英

    第68回応用物理学会春季学術講演会　2021/03/16

  124. トップダウンプロセスで作製したZnO微小共振器中の共振器ポラリトンの室温における観測

    嶋紘平, 古澤健太郎, 秩父重英

    第68回応用物理学会春季学術講演会　2021/03/16

  125. Mgイオン注入後の空孔ガイド拡散法により形成したp型GaNのルミネッセンス評価

    嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 小島一信, 上殿明良, 秩父重英

    第68回応用物理学会春季学術講演会　2021/03/16

  126. 低圧酸性アモノサーマル成長バルクGaN結晶のルミネッセンス評価

    嶋紘平, 栗本浩平, 包全喜, 三川豊, 小島一信, 石黒徹, 秩父重英

    第68回応用物理学会春季学術講演会　2021/03/16

  127. 格子整合系c面AlInN/GaNヘテロ構造のルミネッセンス評価

    李リヤン, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 竹内哲也, 三好実人, 秩父重英

    第68回応用物理学会春季学術講演会　2021/03/16

  128. BGaN中性子検出器における結晶品質およびデバイス構造が検出特性に与える影響(2)

    宮澤篤也, 太田悠斗, 松川真也, 林幸佑, 中川央也, 川崎晟也, 安藤悠人, 本田善央, 天野浩, 嶋紘平, 小島一信, 秩父重英, 井上翼, 青木徹, 中野貴之

    第68回応用物理学会春季学術講演会　2021/03/16

  129. AlN単結晶上にHVPE成長させたSi添加AlN基板の発光特性 International-coauthorship

    秩父重英, 嶋紘平, 小島一信, Baxter Moody, 三田清二, Ramon Collazo, Zlatko Sitar, 熊谷義直, 上殿明良

    第68回応用物理学会春季学術講演会　2021/03/16

  130. (Al,Ga,In)Nの輻射・非輻射再結合過程に点欠陥が及ぼす影響 Invited

    秩父重英, 嶋紘平, 小島一信, 上殿明良, 石橋章司

    日本学術振興会第162委員会 第121回研究会「ワイドギャップ半導体の進展 ― 結晶成長、物性評価からデバイスまで」　2021/03/05

  131. Macroscopically homogeneous cathodoluminescence mapping images of c-plane nearly lattice-matched Al1-xInxN films on a GaN substrate International-presentation

    L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, T. Takeuchi, M. Miyoshi, S. F. Chichibu

    The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT2021)　2021/03/01

  132. Cathodoluminescence studies of AlN epilayers grown by MOVPE on sputtered AlN templates annealed at high temperature International-presentation

    T. Kasuya, K. Shima, K. Shojiki, K. Uesugi, K. Kojima, A. Uedono, H. Miyake, S. F. Chichibu

    The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT2021)　2021/03/01

  133. Striped and fin-shaped cation orderings and self-formed compositional superlattices in an m-plane Al0.7In0.3N on GaN heterostructure International-presentation

    S. F. Chichibu, K. Shima, K. Kojima, Y. Kangawa

    The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT2021)　2021/03/01

  134. Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN International-presentation

    S. F. Chichibu, K. Shima, K. Kojima, Y. Kangawa

    Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity　2021/02/01

  135. 室温で共振器ポラリトンを呈する酸化亜鉛微小共振器の実現

    嶋紘平, 古澤健太郎, 秩父重英

    第20回東北大学多元物質科学研究所研究発表会　2020/12/03

  136. AlNおよび高AlNモル分率AlGaN混晶におけるAl空孔複合体の役割 Invited

    秩父重英, 嶋紘平, 小島一信, 三宅秀人, 上殿明良

    第153回結晶工学分科会研究会　2020/11/19

  137. 陽電子消滅法によるMgイオン注入GaNの空孔型欠陥の焼鈍特性及び欠陥によるキャリア捕獲の研究 International-coauthorship Invited

    上殿明良, 高島信也, 江戸雅晴, 上野勝典, 松山秀昭, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, 嶋紘平, 小島一信, 秩父重英, 石橋章司

    応用物理学会先進パワー半導体分科会, 第7回個別討論会　2020/11/16

  138. 陽電子を用いた超高圧焼鈍によるイオン注入GaNの欠陥回復特性の研究 International-coauthorship Invited

    上殿明良, 櫻井秀樹, 成田哲生, Sierakowski Kacper, Bockowski Michal, 須田淳, 石橋章司, 嶋紘平, 秩父重英, 加地徹

    第49回結晶成長国内会議（JCCG-49）　2020/11/09

  139. 岩塩構造MgZnO薄膜における深紫外PL寿命の評価

    工藤幹太, 石井恭平, 小野瑞生, 金子健太郎, 山口智広, 嶋紘平, 小島一信, 藤田静雄, 本田徹, 秩父重英, 尾沼猛儀

    第81回応用物理学会秋季学術講演会　2020/09/08

  140. 4インチ対応オートクレーブを用いた低圧酸性アモノサーマル(LPAAT)法によるバルクGaN結晶成長

    栗本浩平, 包全喜, 三川豊, 冨田大輔, 嶋紘平, 小島一信, 石黒徹, 秩父重英

    第81回応用物理学会秋季学術講演会　2020/09/08

  141. MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(4)

    秩父重英, 嶋紘平, 稲富悠也, 小島一信, 寒川義裕

    第81回応用物理学会秋季学術講演会　2020/09/08

  142. GaNに格子整合するc面AlInN薄膜の空間分解カソードルミネッセンス

    李リヤン, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 竹内哲也, 三好実人, 秩父重英

    第81回応用物理学会秋季学術講演会　2020/09/08

  143. 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(1)

    嶋紘平, 正直花奈子, 上杉謙次郎, 小島一信, 上殿明良, 三宅秀人, 秩父重英

    第81回応用物理学会秋季学術講演会　2020/09/08

  144. 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(2)

    粕谷拓生, 嶋紘平, 正直花奈子, 上杉謙次郎, 小島一信, 上殿明良, 三宅秀人, 秩父重英

    第81回応用物理学会秋季学術講演会　2020/09/08

  145. c面エピタキシャルAl0.82In0.18N/GaN構造の空間分解カソードルミネッセンス

    李リヤン, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 竹内哲也, 三好実人, 秩父重英

    第12回ナノ構造・エピタキシャル成長講演会　2020/07/30

  146. スパッタAlN上にMOVPE成長させたAlN薄膜のカソードルミネッセンス評価

    粕谷拓生, 嶋紘平, 正直花奈子, 上杉謙次郎, 小島一信, 上殿明良, 三宅秀人, 秩父重英

    第12回ナノ構造・エピタキシャル成長講演会　2020/07/30

  147. 岩塩構造MgZnO薄膜の時間分解フォトルミネッセンス分光

    工藤幹太, 石井恭平, 小野瑞生, 金子健太郎, 山口智広, 嶋紘平, 小島一信, 藤田静雄, 本田徹, 秩父重英, 尾沼猛儀

    第67回応用物理学会春季学術講演会　2020/03/12

  148. BGaN中性子検出器における結晶品質およびデバイス構造が検出特性に与える影響

    太田悠斗, 高橋祐吏, 山田夏暉, 宮澤篤也, 中川央也, 川崎晟也, 本田善央, 天野浩, 嶋紘平, 小島一信, 秩父重英, 井上翼, 青木徹, 中野貴之

    第67回応用物理学会春季学術講演会　2020/03/12

  149. 4インチ成長用オートクレーブを用いた低圧酸性アモノサーマル法によるバルクGaN結晶成長

    栗本浩平, 包全喜, 斎藤真, 三川豊, 茅野林造, 嶋紘平, 小島一信, 石黒徹, 秩父重英

    第67回応用物理学会春季学術講演会　2020/03/12

  150. MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(3)-断面CL-

    秩父重英, 嶋紘平, 小島一信

    第67回応用物理学会春季学術講演会　2020/03/12

  151. GaNに格子整合するc面AlInN薄膜の空間分解陰極線ルミネッセンス

    李リヤン, 嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 竹内哲也, 三好実人, 秩父重英

    第67回応用物理学会春季学術講演会　2020/03/12

  152. 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(1)

    嶋紘平, 中須大蔵, 正直花奈子, 上杉謙次郎, 小島一信, 上殿明良, 三宅秀人, 秩父重英

    第67回応用物理学会春季学術講演会　2020/03/12

  153. 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(2)

    中須大蔵, 嶋紘平, 正直花奈子, 上杉謙次郎, 小島一信, 上殿明良, 三宅秀人, 秩父重英

    第67回応用物理学会春季学術講演会　2020/03/12

  154. PVT成長AlN上にHVPE成長させたSi添加AlN基板の陰極線蛍光評価 International-coauthorship

    秩父重英, 嶋紘平, 小島一信, Moody Baxte, 三田清二, Collazo Ramon, Sitar Zlatko, 熊谷義直, 上殿明良

    第67回応用物理学会春季学術講演会　2020/03/12

  155. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors International-presentation Invited

    S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, A. Uedono

    The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2020　2020/02/01

  156. ZnOの反応性イオンエッチングにおけるプラズマ損傷とHCl浸漬処理による損傷回復

    中須大蔵, 嶋紘平, 小島一信, 秩父重英

    第19回東北大学多元物質科学研究所研究発表会　2019/12/12

  157. Characterization of planar ZnO microcavities for the near ultraviolet polariton laser operatable at room temperature International-presentation

    K. Shima, K. Furusawa, K. Kojima, S. F. Chichibu

    Materials Research Meeting 2019 (MRM2019)　2019/12/10

  158. Improvement of neutron detection efficiency for BGaN semiconductor detectors International-presentation

    T. Nakano, Y. Takahashi, Y. Ohta, N. Yamada, H. Nakagawa, Y. Honda, H. Amano, K. Shima, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki

    Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD)　2019/10/26

  159. Inhibition of explosive by-products generation during CVD from Cl-containing silane precursors in reactor exhaust system International-presentation

    N. Sato, Y. Fukushima, Y. Funato, K. Shima, T. Momose, M. Koshi, Y. Shimogaki

    18th Asian Pacific Confederation of Chemical Engineering Congress (APCChE 2019)　2019/09/23

  160. 酸性アモノサーマル法によるGaNバルク結晶成長

    栗本浩平, 包全喜, 斉藤真, 茅野林造, 冨田大輔, 嶋紘平, 小島一信, 石黒徹, 秩父重英

    第80回応用物理学会秋季学術講演会　2019/09/18

  161. ZnOの反応性イオンエッチングによる損傷とHClによる損傷回復

    中須大蔵, 嶋紘平, 小島 一信, 秩父重英

    第80回応用物理学会秋季学術講演会　2019/09/18

  162. BGaN結晶成長におけるTMB流量依存性の検討および中性子検出デバイスの作製

    太田悠斗, 高橋祐吏, 丸山貴之, 山田夏暉, 中川央也, 川崎晟也, 宇佐美茂佳, 本田善央, 天野浩, 嶋紘平, 小島一信, 秩父重英, 井上翼, 青木徹, 中野貴之

    第80回応用物理学会秋季学術講演会　2019/09/18

  163. ZnO微小共振器の作製と室温における共振器ポラリトン形成

    嶋紘平, 小島 一信, 秩父重英

    第80回応用物理学会秋季学術講演会　2019/09/18

  164. H2キャリアガスを用いたBGaN 結晶成長メカニズムの解析

    清水勇希, 江原一司, 新宅秀矢, 井上翼, 青木徹, 嶋紘平, 小島一信, 秩父重英, 中野貴之

    第80回応用物理学会秋季学術講演会　2019/09/18

  165. Fabrication of planar ZnO microcavities for near ultraviolet polariton laser operating at room temperature International-presentation

    K. Shima, K. Furusawa, K. Kojima, S. F. Chichibu

    4th International Workshop on UV Materials and Devices (IWUMD-IV)　2019/09/08

  166. Time-resolved luminescence studies of indirect excitons in h-BN epitaxial films grown by chemical vapor deposition using carbon-free precursors International-presentation

    S. F. Chichibu, N. Umehara, K. Takiguchi, K. Shima, K. Kojima, Y. Ishitani, K. Hara

    The 13th International Conference on Nitride Semiconductors (ICNS-13)　2019/07/07

  167. Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes International-presentation

    K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, S. F. Chichibu

    The 13th International Conference on Nitride Semiconductors (ICNS-13)　2019/07/07

  168. Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN International-presentation

    S. Takashima, R. Tanaka, K. Ueno, H. Matsuyama, Y. Fukushima, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, A. Uedono

    The 13th International Conference on Nitride Semiconductors (ICNS-13)　2019/07/07

  169. Impact of vacancy complexes on the nonradiative recombination processes in III-N devices International-presentation Invited

    S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, A. Uedono

    The 13th International Conference on Nitride Semiconductors (ICNS-13)　2019/07/07

  170. BGaN結晶成長におけるTMB流量依存性の検討および中性子検出器の開発

    太田悠斗, 高橋祐吏, 丸山貴之, 山田夏暉, 中川央也, 川崎晟也, 宇佐美茂佳, 本田善央, 天野浩, 嶋紘平, 小島一信, 秩父重英, 井上翼, 青木徹, 中野貴之

    第11回ナノ構造・エピタキシャル成長講演会　2019/06/13

  171. BGaN-MOVPE法におけるキャリアガスとホウ素原料の影響

    清水勇希, 江原一司, 新宅秀矢, 井上翼, 青木徹, 嶋紘平, 小島一信, 秩父重英, 中野貴之

    第11回ナノ構造・エピタキシャル成長講演会　2019/06/13

  172. Comparative study on Cu-CVD nucleation using β-diketonato and amidinato precursors for sub-10-nm-thick continuous film formation International-presentation

    K. Shima, H. Shimizu, T. Momose, Y. Shimogaki

    2nd Nucleation and Growth Research Conference (NGRC2019)　2019/06/10

  173. Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate International-presentation Invited

    K. Hara, N. Umehara, K. Shima, K. Kojima, S. F. Chichibu

    The 4th International Conference on Physics of 2D Crystals (ICP2C4)　2019/06/10

  174. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes International-presentation

    K. Shima, K. Kojima, A. Uedono, S. F. Chichibu

    19th International Workshop on Junction Technology (IWJT2019)　2019/06/06

  175. 酸性アモノサーマル法による大口径GaNバルク結晶作製技術の展望 Invited

    秩父重英, 斉藤真, 包全喜, 嶋紘平, 冨田大輔, 小島一信, 石黒徹

    日本学術振興会先端ナノデバイス・材料テクノロジー第151委員会研究会　2019/05/31

  176. Recent progress in acidic ammonothermal growth of GaN crystals International-presentation Invited

    S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima, T. Ishiguro

    11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019),　2019/03/17

  177. 注入深さ･極性面の異なるMgイオン注入GaNのフォトルミネッセンス

    秩父重英, 嶋紘平, 井口紘子, 成田哲生, 片岡恵太, 小島一信, 上殿明良

    第66回応用物理学会春季学術講演会　2019/03/09

  178. 水熱合成単結晶ZnO基板の薄膜化プロセスと微小共振器構造への応用

    嶋紘平, 小島一信, 秩父重英

    第66回応用物理学会春季学術講演会　2019/03/09

  179. 容量測定を用いたp-GaNエピへの低濃度Mg注入と共注入影響の評価

    高島信也, 上野勝典, 田中亮, 松山秀昭, 江戸雅晴, 嶋紘平, 小島一信, 秩父重英, 上殿明良

    第66回応用物理学会春季学術講演会　2019/03/09

  180. 反応性ヘリコン波励起プラズマスパッタ法によるp型NiO薄膜の堆積

    嶋紘平, 小島一信, 秩父重英

    第66回応用物理学会春季学術講演会　2019/03/09

  181. 窒化物半導体特異構造の時間空間分解カソードルミネッセンス評価 Invited

    秩父重英, 嶋紘平, 小島一信

    第66回応用物理学会春季学術講演会　2019/03/09

  182. エピタキシャル成長およびイオン注入Mg添加GaN中の非輻射再結合中心 Invited

    秩父重英, 嶋紘平, 小島一信, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良

    応用物理学会, シリコンテクノロジー分科会接合研究委員会研究会　2019/02/28

  183. 酸性アモノサーマル法による大口径GaNバルク結晶作製技術の展望 Invited

    秩父重英, 斉藤真, 包全喜, 冨田大輔, 嶋紘平, 小島一信, 石黒徹

    日本学術振興会, 結晶加工と評価技術145委員会パワーデバイス用シリコンおよび関連半導体に関する研究会（第6回）　2018/12/17

  184. GaN パワー半導体のエピ成長・プロセスで生じる点欠陥の理解と制御 Invited

    成田哲生, 冨田一義, 徳田豊, 小木曽達也, 嶋紘平, 井口紘子, 片岡恵太, 小島一信, 秩父重英, 上殿明良, 堀田昌宏, 五十嵐信行, 加地徹

    日本学術振興会, 結晶加工と評価技術145委員会パワーデバイス用シリコンおよび関連半導体に関する研究会（第6回）　2018/12/17

  185. Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate International-presentation

    S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, K. Hara

    Materials Research Society, 2018 Fall Meeting　2018/11/25

  186. Recent progress of acidic ammonothermal growth of GaN International-presentation

    S. F. Chichibu, M. Saito, Q. Bao, K. Shima, D. Tomida, K. Kojima, T. Ishiguro

    4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)　2018/11/18

  187. Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate International-presentation

    S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, K. Hara

    International Workshop on Nitride Semiconductors 2018 (IWN2018)　2018/11/11

  188. Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures International-presentation

    S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, A. Uedono

    International Workshop on Nitride Semiconductors 2018 (IWN2018),　2018/11/11

  189. Recent progress of large size bulk GaN crystal growth by acidic ammonothermal method International-presentation Invited

    M. Saito, Q. Bao, K. Shima, D. Tomida, K. Kojima, T. Ishiguro, S. F. Chichibu

    International Workshop on Nitride Semiconductors 2018 (IWN2018)　2018/11/11

  190. 反応性ヘリコン波励起プラズマスパッタ法による紫外線対応誘電体分布ブラッグ反射鏡の形成

    嶋紘平, 粕谷拓生, 小島一信, 秩父重英

    日本学術振興会第162委員会110回研究会　2018/09/27

  191. 時間分解フォトルミネッセンスによるZnOのプロセス誘起欠陥の評価

    粕谷拓生, 嶋紘平, 小島一信, 秩父重英

    第79回応用物理学会秋季学術講演会　2018/09/18

  192. 反応性ヘリコン波励起プラズマスパッタ法によるSiO2/HfO2誘電体分布ブラッグ反射鏡の作製

    嶋紘平, 粕谷拓生, 小島一信, 秩父重英

    第79回応用物理学会秋季学術講演会　2018/09/18

  193. サファイア基板に気相成長させたh-BN薄膜の発光ダイナミクス

    秩父重英, 嶋紘平, 梅原直己, 小島一信, 原和彦

    第79回応用物理学会秋季学術講演会　2018/09/18

  194. A comparative study on SiO2/ZrO2 and SiO2/HfO2 distributed Bragg reflectors for ZnO-based microcavities International-presentation

    K. Shima, T. Kasuya, K. Furusawa, K. Kojima, S. F. Chichibu

    The 10th International Workshop on Zinc Oxide and Other Oxide Semiconductors (IWZnO2018)　2018/09/11

  195. Fabrication of a ZnO-based microcavity using the reactive helicon-wave-excited-plasma sputtering method International-presentation

    T. Kasuya, K. Shima, K. Kojima, K. Furusawa, S. F. Chichibu

    The 10th International Workshop on Zinc Oxide and Other Oxide Semiconductors (IWZnO2018)　2018/09/11

  196. Recent progress in acidic ammonothermal growth of GaN crystals International-presentation Invited

    S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima, T. Ishiguro

    The 7th International Symposium of Growth of III-Nitrides (ISGN-7)　2018/08/05

  197. 酸性アモノサーマル法による大型GaN結晶成長への取り組み Invited

    斉藤真, 包全喜, 嶋紘平, 冨田大輔, 小島一信, 石黒徹, 秩父重英

    2018年日本結晶成長学会特別講演会　2018/07/18

  198. 酸性アモノサーマル法によるGaNバルク結晶作製技術の進展 Invited

    斉藤真, 包全喜, 嶋紘平, 冨田大輔, 小島一信, 石黒徹, 秩父重英

    日本学術振興会 結晶成長の科学と技術第161委員会　2018/07/06

  199. Mg添加GaNエピ層及びイオン注入層のフォトルミネッセンス評価 Invited

    秩父重英, 嶋紘平, 小島一信, 高島信也, 上野勝典, 江戸雅晴, 井口紘子, 成田哲生, 片岡恵太, 石橋章司, 上殿明良

    第149回結晶工学分科会研究会　2018/06/15

  200. Mgイオン注入GaN層上におけるノーマリーオフMOSFET検討 Invited

    高島信也, 田中亮, 上野勝典, 松山秀昭, 江戸雅晴, 高橋言緒, 清水三聡, 石橋章司, 中川清和, 堀田昌宏, 須田淳, 嶋紘平, 小島一信, 秩父重英, 上殿明良

    第149回結晶工学分科会研究会　2018/06/15

  201. Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate International-presentation Invited

    S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, K. Hara

    The 3rd International Conference on Physics of 2D Crystals (ICP2C3)　2018/05/29

  202. P-type Conduction of Mg-ion Implanted N-polar GaN and the Optical Investigation International-presentation Invited

    T. Narita, K. Kataoka, H. Iguchi, K. Shima, K. Kojima, S. F. Chichibu, M. Kanechika, T. Uesugi, T. Kachi

    The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18)　2018/04/23

  203. Mgイオン注入N極性面GaNの時間分解フォトルミネッセンス評価

    嶋紘平, 井口紘子, 成田哲生, 片岡恵太, 上殿明良, 小島一信, 秩父重英

    第65回応用物理学会春季学術講演会　2018/03/17

  204. 反応性ヘリコン波励起プラズマスパッタ法による誘電体分布ブラッグ反射鏡の形成 (2)

    嶋紘平, 粕谷拓生, 菊地清, 小島一信, 秩父重英

    第65回応用物理学会春季学術講演会　2018/03/17

  205. 反応性ヘリコン波励起プラズマスパッタ法による誘電体分布ブラッグ反射鏡の形成 (1)

    粕谷拓生, 嶋紘平, 菊地清, 小島一信, 秩父重英

    第65回応用物理学会春季学術講演会　2018/03/17

  206. 酸性アモノサーマル法による大型GaN結晶成長の検討

    斉藤真, 包全喜, 栗本浩平, 冨田大輔, 嶋紘平, 小島一信, 石黒徹, 秩父重英

    第65回応用物理学会春季学術講演会　2018/03/17

  207. 超臨界アンモニアを用いた酸性アモノサーマル法による2インチバルクGaN結晶育成

    包全喜, 斉藤真, 栗本浩平, 嶋紘平, 冨田大輔, 小島一信, 石黒徹, 秩父重英

    化学工学会第83年会　2018/03/13

  208. GaNの低転位密度化・高純度化と主要な非輻射再結合中心 Invited

    秩父重英, 上殿明良, 嶋紘平, 小島一信, 石橋章司

    応用物理学会先進パワー半導体分科会, 第3回個別討論会　2017/12/12

  209. SiC-CVDプロセスのマルチスケールでのモデル化とシミュレーション

    舩門佑一, 佐藤登, 嶋紘平, 中智明, 百瀬健, 霜垣幸浩

    COMSOL Conference 2017 Tokyo　2017/12/08

  210. Consideration of Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N and ZnO International-presentation Invited

    S. F. Chichibu, K. Kojima, K. Shima, A. Uedono, S. Ishibashi

    Materials Research Society, 2017 Fall Meeting　2017/11/26

  211. 塩素-ケイ素含化合物を用いたCVDにおける添加ガスによる副生成物の低減

    佐藤登, 福島康之, 舩門佑一, 嶋紘平, 百瀬健, 越光男, 霜垣幸浩

    化学工学会第49回秋季大会　2017/09/20

  212. SiC-CVIプロセスにおける高濃度原料供給条件下での製膜モデルの検討

    中智明, 佐藤登, 嶋紘平, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第49回秋季大会　2017/09/20

  213. CVDトレンチ埋込プロセスのマルチスケール解析とシミュレーション

    舩門佑一, 佐藤登, 嶋紘平, 中智明, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第49回秋季大会　2017/09/20

  214. SiC-CVD総括反応モデルの構築と検証

    舩門佑一, 佐藤登, 嶋紘平, 中智明, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第49回秋季大会　2017/09/20

  215. GaN基板上Mg添加GaNの時間分解フォトルミネッセンス評価

    秩父重英, 小島一信, 嶋紘平, 高島信也, 江戸雅晴, 上野勝典, 石橋章司, 上殿明良

    第78回応用物理学会秋季学術講演会　2017/09/05

  216. 酸性鉱化剤を用いたアモノサーマル法による電子デバイス用GaN結晶合成の進展 Invited

    秩父重英, 斉藤真, 包全喜, 栗本浩平, 冨田大輔, 嶋紘平, 小島一信, 鏡谷勇二, 茅野林造, 石黒 徹

    第78回応用物理学会秋季学術講演会　2017/09/05

  217. Surface reaction modeling of SiC-CVI revealed using deep microchannels and process development for highly conformal deposition using novel sacrificial layer International-presentation

    K. Shima, N. Sato, Y. Funato, T. Naka, Y. Fukushima, T. Momose, Y. Shimogaki

    Joint EuroCVD 21 - Baltic ALD 15 Conference　2017/06/11

  218. Reformation of analytical method for surface reaction kinetics on CVD based on the Microcavity method International-presentation

    Y. Funato, N. Sato, K. Shima, T. Naka, Y. Fukushima, T. Momose, Y. Shimogaki

    Joint EuroCVD 21 - Baltic ALD 15 Conference　2017/06/11

  219. SiC-CVIプロセスにおけるマルチスケールでの均一成長を目指したHClガス添加及び高濃度原料供給効果

    中智明, 嶋紘平, 佐藤登, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第82年会　2017/03/06

  220. モノメチルトリクロロシランを用いたSiC-CVDプロセス最適化のための総括反応モデル構築(4)

    舩門佑一, 嶋紘平, 佐藤登, 中智明, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第82年会　2017/03/06

  221. SiC-CVIプロセスの合理設計による超均一含浸の実現および複合材料特性への影響

    嶋紘平, 佐藤登, 舩門佑一, 中智明, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第82年会　2017/03/06

  222. 多孔質媒体での希釈種輸送モジュールを用いた繊維構造への含浸挙動予測

    舩門佑一, 佐藤登, 嶋紘平, 中智明, 百瀬健, 霜垣幸浩

    COMSOL Conference Tokyo 2016　2016/12/09

  223. Tailoring high-aspect-ratio three-dimensional test structures for process development of conformal-film deposition technologies International-presentation

    K. Shima, N. Sato, Y. Funato, Y. Fukushima, T. Momose, Y. Shimogaki

    38th International Symposium on Dry Process (DPS2016)　2016/11/21

  224. Co thin film fabrication using hot-wire assisted atomic layer deposition International-presentation

    T. Naka, K. Shima, T. Momose, Y. Shimogaki

    26th Asian Session of Advanced Metallization Conference (ADMETAplus)　2016/10/20

  225. Preparation of High-Quality Metallic Films by Hot-Wire Assisted Atomic Layer Deposition International-presentation

    Y. Shimogaki, K. Shima, G. Yuan, T. Momose, H. Shimizu

    PRiME 2016/230th ECS Meeting　2016/10/02

  226. 高純度・高配向性Co薄膜形成を目指したホットワイヤALDプロセスの最適化

    中智明, 嶋紘平, 百瀬健, 霜垣幸浩

    化学工学会第48回秋季大会　2016/09/06

  227. 均一含浸を目指したSiC-CVIプロセスへのHClガス添加効果

    中智明, 佐藤登, 嶋紘平, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第48回秋季大会　2016/09/06

  228. モノメチルトリクロロシランを用いたSiC-CVDプロセス最適化のための総括反応モデル構築(3)

    舩門佑一, 佐藤登, 嶋紘平, 中智明, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第48回秋季大会　2016/09/06

  229. SiC-CVIプロセスの初期成長に対する下地材料の影響

    嶋紘平, 佐藤登, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第48回秋季大会　2016/09/06

  230. ホットワイヤALDを用いたサファイア上へのCo薄膜合成

    中智明, 嶋紘平, 百瀬健, 霜垣幸浩

    第13回Cat-CVD研究会　2016/07/08

  231. モノメチルトリクロロシランを用いたSiC-CVDプロセス最適化のための総括反応モデル構築(2)

    舩門佑一, 佐藤登, 嶋紘平, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第81年会　2016/03/13

  232. 超高アスペクト比構造を用いて観察したSiC-CVI製膜挙動の温度・圧力依存性

    嶋紘平, 佐藤登, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第81年会　2016/03/13

  233. 犠牲層を活用したSiC-CVI均一埋込プロセスの構築

    嶋紘平, 佐藤登, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第81年会　2016/03/13

  234. 微細溝への薄膜堆積における溝内膜厚分布の時間変化の可視化

    舩門佑一, 佐藤登, 嶋紘平, 福島康之, 百瀬健, 霜垣幸浩

    COMSOL Conference Tokyo 2015　2015/12/03

  235. Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System International-presentation

    K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    32nd Annual Advanced Metallization Conference　2015/09/09

  236. 塩素-ケイ素含化合物を用いたCVDでの下流堆積物生成反応モデルの構築

    佐藤登, 嶋紘平, 舩門佑一, 杉浦秀俊, 中原拓也, 福島康之, 百瀬健, 越光男, 霜垣幸浩

    化学工学会第47回秋季大会　2015/09/09

  237. 超高アスペクト比ミクロキャビティを用いたSiC-CVI法のモデリング

    嶋紘平, 佐藤登, 舩門佑一, 杉浦秀俊, 中原拓也, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第47回秋季大会　2015/09/09

  238. 微細トレンチにおける製膜物質の反応性解析手法の改良

    舩門佑一, 嶋紘平, 佐藤登, 杉浦秀俊, 中原拓也, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第47回秋季大会　2015/09/09

  239. Multi-scale analysis of chemical vapor deposition for SiC from organosilane precursors International-presentation

    H. Sugiura, N. Sato, Y. Funato, K. Shima, Y. Fukushima, T. Momose, Y. Shimogaki

    20th Biennial European Conference on Chemical Vapor Deposition　2015/07/13

  240. Construction of overall reaction model of silicon carbide chemical vapor infiltration for process design International-presentation

    Y. Funato, N. Sato, K. Shima, H. Sugiura, Y. Fukushima, T. Momose, Y. Shimogaki

    20th Biennial European Conference on Chemical Vapor Deposition　2015/07/13

  241. Kinetic study on chemical vapor infiltration of silicon carbide using high-aspect-ratio features International-presentation

    K. Shima, N. Sato, Y. Funato, H. Sugiura, Y. Fukushima, T. Momose, Y. Shimogaki

    20th Biennial European Conference on Chemical Vapor Deposition　2015/07/13

  242. Gas phase and surface reaction simulation on chemical vapor infiltration of silicon carbide International-presentation

    N. Sato, Y. Funato, K. Shima, Y. Fukushima, T. Momose, M. Koshi, Y. Shimogaki

    20th Biennial European Conference on Chemical Vapor Deposition　2015/07/13

  243. Barrier performance of Co(W) thin film against Cu diffusion for ULSI Cu interconnect proved by atom probe tomography International-presentation

    K. Shima, T. Kim, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    Workshop of Tohoku University and SCK-CEN　2015/06/21

  244. モノメチルトリクロロシランを用いたSiC-CVDプロセスにおける製膜種付着確率の詳細解析(3)

    嶋紘平, 佐藤登, 舩門佑一, 杉浦秀俊, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第80年会　2015/03/19

  245. モノメチルトリクロロシランを用いたSiC-CVDプロセス最適化のための総括反応モデル構築

    舩門佑一, 佐藤登, 嶋紘平, 福島康之, 杉浦秀俊, 百瀬健, 霜垣幸浩

    化学工学会第80年会　2015/03/19

  246. トリメチルクロロシランを原料としたSiC-CVDプロセスのマルチスケール解析

    杉浦秀俊, 嶋紘平, 佐藤登, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第80年会　2015/03/19

  247. モノメチルトリクロロシランを原料としたSiC-CVDプロセスの滞留時間依存性

    中原拓也, 嶋紘平, 佐藤登, 舩門佑一, 杉浦秀俊, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第17回学生発表会　2015/03/07

  248. CVD/ALDを用いたCu(Mn)/Co(W)配線システムの構築と３次元アトムプローブによるサブナノ構造・バリヤ性評価 Invited

    嶋紘平, 涂远, 韓斌, 高見澤悠, 清水秀治, 清水康雄, 百瀬健, 井上耕治, 永井康介, 霜垣幸浩

    応用物理学会シリコンテクノロジー分科会多層配線システム研究委員会主催（電子情報通信学会シリコン材料・デバイス研究会(SDM)共催）配線技術研究集会　2015/03/02

  249. 3次元アトムプローブを用いた新規Cu(Mn)/Co(W)配線システムのサブナノ構造の解明とバリヤ性評価

    嶋紘平, 涂远, 韓斌, 高見澤悠, 清水秀治, 清水康雄, 百瀬健, 井上耕治, 永井康介, 霜垣幸浩

    第75回応用物理学会秋季学術講演会　2014/09/17

  250. モノメチルトリクロロシランを原料としたSiC-CVIプロセス最適化のための反応炉スケールシミュレーション

    舩門佑一, 佐藤登, 福島康之, 嶋紘平, 杉浦秀俊, 百瀬健, 霜垣幸浩

    化学工学会第46回秋季大会　2014/09/17

  251. モノメチルトリクロロシランを原料としたSiC-CVDプロセスにおける圧力依存性を考慮した素反応機構の構築

    佐藤登, 舩門佑一, 嶋紘平, 杉浦秀俊, 福島康之, 百瀬健, 越光男, 霜垣幸浩

    化学工学会第46回秋季大会　2014/09/17

  252. SiC-CVDにおける有機シラン原料の比較検討

    杉浦秀俊, 嶋紘平, 佐藤登, 舩門佑一, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第46回秋季大会　2014/09/17

  253. モノメチルトリクロロシランを用いたSiC-CVDプロセスにおける製膜種付着確率の詳細解析(2)

    嶋紘平, 佐藤登, 舩門佑一, 杉浦秀俊, 福島康之, 百瀬健, 霜垣幸浩

    化学工学会第46回秋季大会　2014/09/17

  254. Chemical Vapor Deposition Process for SiC Film using Tetramethylsilane/H2 system International-presentation

    H. Sugiura, Y. Fukushima, K. Shima, N. Sato, Y. Funato, T. Momose, Y. Shimogaki

    1st Belux workshop on Coating, Materials, Surface and Interface　2014/09/11

  255. Kinetics of Chemical Vapor Infiltration Using MTS/H2 for SiC Film Coating Revealed by Multi-Scale Analysis International-presentation

    K. Shima, N. Sato, Y. Funato, H. Sugiura, Y. Fukushima, T. Momose, Y. Shimogaki

    1st Belux workshop on Coating, Materials, Surface and Interface　2014/09/11

  256. Sub-nanoscale Structure and Barrier Performance of Cu(Mn)/Co(W) System for ULSI Cu Interconnects Examined by Atom Probe Tomography International-presentation

    K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    1st Belux workshop on Coating, Materials, Surface and Interface　2014/09/11

  257. Kinetics of Chemical Vapor Deposition Using CH3SiCl3/H2 for SiC Film Coating into the High Aspect Ratio Features International-presentation

    K. Shima, N. Sato, Y. Funato, H. Sugiura, Y. Fukushima, T. Momose, Y. Shimogaki

    13th GMSI-COSM-UT2 2014 Graduate Student Workshop (University of Tokyo – University of Toronto)　2014/06/10

  258. モノメチルトリクロロシランを用いたSiC-CVDプロセスにおける製膜種付着確率の詳細解析

    嶋紘平, 福島康之, 佐藤登, 舩門佑一, 杉浦秀俊, 保戸塚梢, 百瀬健, 霜垣幸浩

    化学工学会第79年会　2014/03/18

  259. テトラメチルシランを原料としたSiC-CVDプロセスのマルチスケール解析

    杉浦秀俊, 福島康之, 嶋紘平, 佐藤登, 舩門佑一, 保戸塚梢, 百瀬健, 霜垣幸浩

    化学工学会第79年会　2014/03/18

  260. Observation of Grain-Boundary Stuffing and Barrier Performance in CVD-Cu(Mn)/ALD-Co(W) System by Atom Probe Tomography International-presentation

    K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki

    Materials for Advanced Metallization 2014　2014/03/02

  261. Fabrication of High-Quality and Reliability Cu interconnects by Chemical Processes International-presentation Invited

    Y. Shimogaki, H. Kim, H. Shimizu, K. Shima, T. Momose

    23rd Asian Session of Advanced Metallization Conference (ADMETAplus)　2013/10/07

  262. Materials and Process Design to Realize Highly Reliable ULSI Cu Interconnects International-presentation

    K. Shima, H. Shimizu, T. Momose, Y. Shimogaki

    12th GMSI-COSM-UT2 2013 Graduate Student Workshop (University of Tokyo – University of Toronto)　2013/06/05

  263. ALD-Co(W)バリヤ膜上に形成したCVD-Cu膜の密着性と初期核発生

    嶋紘平, 清水秀治, 百瀬健, 霜垣幸浩

    第60回応用物理学会春季学術講演会　2013/03/27

  264. Adhesion Strength of CVD-Cu with CVD or ALD-Co(W) for A Single Film Working as Cu Diffusion Barrier and Adhesion Layer in Future ULSI Interconnects International-presentation

    K. Shima, H. Shimizu, T. Momose, Y. Shimogaki

    Materials for Advanced Metallization 2013　2013/03/10

  265. Adhesion and Nucleation Property of CVD-Cu with ALD-Co(W) Film as Cu Diffusion Barrier and Adhesion Promoting Layer in Future ULSI Interconnects International-presentation

    K. Shima, H. Shimizu, T. Momose, Y. Shimogaki

    22nd Asian Session of Advanced Metallization Conference (ADMETAplus)　2012/10/23

  266. Process Design for Co(W) Alloy Films as a Single Layered Barrier/Liner Layer for 14 nm Generation Cu-interconnect International-presentation

    H. Shimizu, A. Kumamoto, Y. Suzuki, K. Shima, T. Momose, Y. Shimogaki

    22nd Asian Session of Advanced Metallization Conference (ADMETAplus)　2012/10/23

  267. Process Design for Co(W) Alloy Films as a Single Layered Barrier/Liner Layer for 14 nm Generation Cu-interconnect International-presentation

    H. Shimizu, A. Kumamoto, K. Shima, Y. Suzuki, T. Momose, Y. Shimogaki

    29th Annual Advanced Metallization Conference　2012/10/09

  268. Adhesion and Nucleation Property of CVD-Cu with ALD-Co(W) Film as Cu Diffusion Barrier and Adhesion Promoting Layer in Future ULSI Interconnects International-presentation

    K. Shima, H. Shimizu, T. Momose, Y. Shimogaki

    29th Annual Advanced Metallization Conference　2012/10/09

  269. High Density Nucleation to Realize Ultra Thin and Continuous CVD-Cu Film Using Ruthenium Glue Layer Applied to Highly Reliable ULSIs International-presentation

    K. Shima, H. Shimizu, T. Momose, Y. Shimogaki

    International Union of Materials Research Societies-International Conference on Electronic Materials 2012　2012/09/23

  270. Cu-CVDプロセスの初期核発生・成長に対する下地材料の影響

    嶋紘平, 清水秀治, 百瀬健, 霜垣幸浩

    化学工学会第44回秋季大会　2012/09/19

  271. Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects International-presentation International-coauthorship

    H. Shimizu, H. Wojcik, K. Shima, Y. Kobayashi, T. Momose, J. W. Bartha, Y. Shimogaki

    IEEE International Interconnect Technology Conference　2012/06/04

  272. ULSI多層配線におけるCVD-Cuシード層形成に適した下地の検討

    嶋紘平, 清水秀治, 百瀬健, 霜垣幸浩

    第59回応用物理学関係連合講演会　2012/03/15

  273. 原子層堆積による次世代配線バリア層Co(W)膜のスタッフィング構造形成

    清水秀治, 嶋紘平, 迫田薫, 百瀬健, 霜垣幸浩

    第59回応用物理学関係連合講演会　2012/03/15

  274. ALD/CVDによる次世代Cu配線用単層バリヤ/ライナーCo(W)膜

    清水秀治, 嶋紘平, 百瀬健, 小林芳彦, 霜垣幸浩

    応用物理学会シリコンテクノロジー分科会多層配線システム研究委員会主催（電子情報通信学会シリコン材料・デバイス研究会(SDM)共催）配線技術研究集会　2012/03/15

  275. CVDプロセスによるULSI多層配線用CuMn合金薄膜形成の検討

    嶋紘平, 百瀬健, 霜垣幸浩

    第72回応用物理学会学術講演会　2011/08/29

  276. Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures International-presentation International-coauthorship Invited

    S. F. Chichibu, K. Shima, H. Iguchi, T. Narita, K. Kataoka, H. Sakurai, M. Bockowski, J. Suda, T. Kachi, S. Takashima, R. Tanaka, K. Ueno, M. Edo, S. Ishibashi, A. Uedono

    The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2023　2023/01/30

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Industrial Property Rights 6

  1. 耐熱複合材料の製造方法及び製造装置

    中村武志, 保戸塚梢, 福島康之, 霜垣幸浩, 百瀬健, 杉浦秀俊, 嶋紘平, 舩門佑一

    Property Type: Patent

  2. 耐熱複合材料の製造方法及び製造装置

    中村武志, 石崎雅人, 保戸塚梢, 福島康之, 霜垣幸浩, 百瀬健, 杉浦秀俊, 嶋紘平, 舩門佑一

    Property Type: Patent

  3. ケイ素化合物材料の製造方法およびケイ素化合物材料製造装置

    福島康之, 赤崎梢, 田中康智, 秋久保一馬, 中村武志, 霜垣幸浩, 百瀬健, 佐藤登, 嶋紘平, 舩門佑一

    Property Type: Patent

  4. Method of producing a silicon compound material and apparatus for producing a silicon compound material

    Y. Fukushima, K. Akazaki, Y. Tanaka, K. Akikubo, T. Nakamura, Y. Shimogaki, T. Momose, N. Sato, K. Shima, Y. Funato

    特許20190135640 A1

    Property Type: Patent

  5. Heat-resistant composite material production method and production device

    T. Nakamura, K. Hotozuka, Y. Fukushima, Y. Shimogaki, T. Momose, H. Sugiura, K. Shima, Y. Funato

    特許20160305015 A1

    Property Type: Patent

  6. Heat-resistant composite material production method and production device

    T. Nakamura, M. Ishizaki, K. Hotozuka, Y. Fukushima, Y. Shimogaki, T. Momose, H. Sugiura, K. Shima, Y. Funato

    特許20160297716 A1

    Property Type: Patent

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Research Projects 17

  1. Top-down fabrication of semiconductor microcavities and their application to ultraviolet polariton lasers

    K. Shima, S. F. Chichibu

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2025/04 - 2028/03

  2. III族窒化物半導体の欠陥科学：点欠陥物理と単一光子源の究明 Competitive

    M. Horita, K. Shima, M. Kaneko, T. Kobayashi

    Offer Organization: Center for Integrated Research of Future Electronics (CIRFE)

    System: 2025年度若手活性化支援事業

    2025/07 - 2026/03

  3. 窒化ガリウム欠陥科学構築に向けた空孔型および格子間原子型欠陥の物理究明 Competitive

    M. Horita, K. Shima, M. Kaneko

    Offer Organization: Center for Integrated Research of Future Electronics (CIRFE)

    System: 2024年度若手活性化支援事業

    2024/07 - 2025/03

  4. グラファイト型層状窒化ホウ素の気相合成と光電子素子材料としての物性解明

    S. F. Chichibu, K. Shima

    2023/06 - 2025/03

  5. 六方晶および閃亜鉛鉱構造窒化ホウ素の高温気相エピタキシャル成長と導電性制御

    S. F. Chichibu, K. Shima

    2022/04 - 2025/03

  6. 窒化ガリウム欠陥科学構築に向けた空孔型および格子間原子型欠陥の物理究明 Competitive

    M. Horita, K. Shima, M. Kaneko

    Offer Organization: Center for Integrated Research of Future Electronics (CIRFE)

    System: 2023年度若手活性化支援事業

    2023/12 - 2024/03

  7. Room temperature polariton lasing by current injection into ZnO microcavities

    K. Shima

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Early-Career Scientists

    Institution: Tohoku University

    2021/04 - 2024/03

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    We aimed to achieve room-temperature electrical pumping in polariton lasers, which are expected to serve as ultra-low-threshold coherent light sources. Firstly, we developed a process to thin down bulk zinc oxide single crystals synthesized via hydrothermal methods to thicknesses on the order of the light wavelength, while ensuring a long exciton lifetime. Secondly, we fabricated optically pumped microcavities and measured the energy dispersion of cavity polaritons' upper and lower branches via angle-resolved reflectance spectroscopy. We confirmed that the Rabi splitting energy, a stability indicator of cavity polaritons, was tens of meV higher than the conventional experimental value (130 meV, low temperature). Thirdly, we manufactured current-injection devices and verified their rectifying characteristics. These achievements are considered significant steps toward stable room-temperature operation of polariton lasers.

  8. 広禁制帯幅ナノ構造を計測可能な時間・空間同時分解陰極線蛍光計測システムの開発 Competitive

    S. F. Chichibu, K. Shima

    Offer Organization: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    System: 多元研プロジェクト2022

    Category: Research grant

    Institution: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    2022/04 - 2023/03

  9. ZnO微小共振器による室温ポラリトンレーザ発振の実証 Competitive

    K. Shima

    Offer Organization: The Noguchi Institute

    System: 2021年度野口遵研究助成

    Category: 研究助成金

    Institution: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    2022/04 - 2023/03

  10. Modification of the bandgap of hexagonal BN and deep-ultraviolet luminescence dynamics of excitons in them

    S. F. Chichibu, K. Hara, K. Kojima, K. Shima

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Challenging Research (Exploratory)

    Institution: Tohoku University

    2020/07 - 2022/03

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    Hexagonal boron nitride (hBN) crystallizes in layers of a two-dimensional honeycomb BN structure. Since hBN exhibits high-efficiency emissions at 5.2-5.9 eV in spite of the indirect bandgap, hBN has a potential for the use in deep-ultraviolet light emitters. Recently, the presence of a direct bandgap has been reported in an isolated monolayer hBN (mBN). However, little is known about the luminescent properties of mBN. Here, temporally and spatially resolved luminescence measurements were carried out to elucidate the emission dynamics of indirect excitons (iXs) in hBN and direct excitons (dXs) in mBN epilayers. The room-temperature emission lifetimes of iXs in hBN were about 55 ps, which implies excellent radiative performance of hBN. Cathodoluminescence (CL) spectra at 13 K of mBN exhibited a distinct dX emission peak at around 6.04 eV superimposed on a broad 5.5-eV-band that originated from hBN. In addition, a CL peak at 6.035 eV that originated from graphitic BN was identified.

  11. Development of thermal neutron imaging sensor using BGaN semiconductor detector

    T. Nakano, T. Aoki, T. Inoue, Y. Honda, K. Kojima, K. Shima

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Shizuoka University

    2019/04 - 2022/03

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    Recently, the expansion of neutron applications has led to the development of new detectors for neutron imaging technology, and we have proposed BGaN, a group-III nitride semiconductor material, as a neutron semiconductor detector. We have calculated the thickness dependence of the detection energy of neutron capture reaction for device application, and confirmed that the film thickness required for energy discrimination is more than 5 um. In order to achieve high-quality thick-film epitaxial growth of more than 5 um, we have achieved thick-film epitaxial growth of more than 5 um by controlling gas-phase reactions, optimizing growth temperatures, and controlling strain. The thick-film BGaN crystals were used to fabricate a radiation detection diode, and the neutron capture signal detection was improved by the thicker film.

  12. 酸化亜鉛微⼩共振器における室温ポラリトンレーザ発振の実証 Competitive

    K. Shima

    Offer Organization: The Japan Science Society

    System: 笹川科学研究助成2021

    Category: 研究助成金

    Institution: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    2021/04 - 2022/02

  13. Electrically pumped ZnO-based UV polariton laser operating at room temperature Competitive

    K. Shima

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists

    Category: Grant-in-Aid for Early-Career Scientists

    Institution: Tohoku University

    2019/04 - 2021/03

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    To realize electrically pumped zinc oxide (ZnO) polariton lasers, chip-size planar ZnO microcavities (MCs) were fabricated by a top-down process. The ZnO MCs simultaneously maintained the high radiative performance of a ZnO active layer and high reflectivity of wide-bandwidth distributed Bragg reflectors (DBRs). Angle-resolved photoluminescence spectra of the ZnO MCs measured at different positions with a spot size of 80 um in diameter exhibited angle-dependent energy shifts in the near-band-edge emission, which arises from the emissions of lower polariton branch of the cavity-polaritons at room temperature. Furthermore, the current-voltage characteristics of p-n diodes fabricated within the ZnO MCs exhibited distinct rectification. The results are a significant milestone toward the realization of room-temperature ZnO-based polariton lasers.

  14. Spatio-time-resolved cathodoluminescence studies on singularity crystals

    S. F. Chichibu, K. Kojima, K. Shima, T. Nakasu

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Institution: Tohoku University

    2016/06 - 2021/03

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    Singular structures containing imperfections and/or inhomogeneity form heterostructures with the bulk and the surface. In order to probe local luminescence dynamics in such singularities embedded in wide bandgap semiconductors (WBGSs), spatio-time-resolved cathodoluminescence (STRCL), which uses a femtosecond-laser-driven pulsed photoelectron gun instead of cw electron gun of spatially resolved cathodoluminescence (CL) equipped on scanning electron microscopy (SEM), is an attractive tool. In this work, technical advantages were offered on the spatial and temporal resolutions of our STRCL system, and then local luminescence dynamics in designed, self-formed, and accidentally formed WBGS singularity structures fabricated by other research groups within this academic area such as GaN, InGaN, AlInN, AlN, and BN were successfully characterized.

  15. Fabrication of electrically pumped ZnO polariton laser operating at room temperature Competitive

    K. Shima

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Research Activity Start-up

    Category: Grant-in-Aid for Research Activity Start-up

    Institution: Tohoku University

    2017/08 - 2019/03

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    To realize electrically pumped polariton lasers operatable at room temperature, ZnO microcavities (MCs) were developed and p-type semiconductors applicable to the ZnO MCs was studied. Planar ZnO MCs were demonstrated capable of both high crystalline-quality of the ZnO active layer and high photonic-quality of the distributed Bragg reflectors (DBRs). The former was achieved by thinning a ZnO single-crystal grown by the hydrothermal method, while the latter was achieved with dielectric DBRs formed by reactive helicon-wave-excited-plasma sputtering (R-HWPS) method. The surface of ZnO after the final etching step exhibited sufficiently long photoluminescence lifetime of 130 ps for the near-band-edge emission at room temperature. The DBRs exhibited sufficiently high reflectivity (98%) and wide stopband width (90 nm). In addition, p-type NiO films with optical bandgap of 3.6 eV and carrier concentration of 1E20 cm-3 were obtained by R-HWPS method.

  16. A comparative study on SiO2/ZrO2 and SiO2/HfO2 distributed Bragg reflectors for ZnO-based microcavities Competitive

    K. Shima

    Offer Organization: Marubun Research Promotion Foundation

    System: 丸文財団国際交流助成2018

    Category: 研究助成金

    Institution: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    2018/09 - 2018/09

  17. 超低閾値コヒーレント光源実現に向けたZnO微小共振器構造の形成 Competitive

    K. Shima

    Offer Organization: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    System: 多元研プロジェクト2017

    Category: Research grant

    Institution: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

    2017/04 - 2018/03

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Teaching Experience 3

  1. Semiconductor optoelectronics B　Department of Applied Physics, School of Engineering, Tohoku University Postgraduate

  2. 学問論演習「グリーンテクノロジーのための材料とデバイス （磁気デバイスおよび半導体光デバイス関連の実習・講義）」　Tohoku University

  3. 基礎ゼミ（省エネで環境に優しい 半導体発光デバイスの最先端）　Tohoku University

Works 1

  1. Microchannels: High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition

    Kohei Shima, Yuichi Funato, Hidetoshi Sugiura, Noboru Sato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki

    Advanced Materials Interfaces 2016/08/22 - Present

    Type: Other

    DOI： 10.1002/admi.201670080 　

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    Back cover

Social Activities 1

  1. 仙台高等専門学校の学生向け次世代放射光施設および多元研見学会（学生23名参加）

    2022/03/15 -

Media Coverage 7

  1. 東北大、深紫外線LEDの初期劣化の仕組み解明

    日刊工業新聞

    2023/05/25

    Type: Newspaper, magazine

  2. 光による消毒・殺菌でウィズコロナ社会の公衆衛生に貢献 －深紫外線発光ダイオード（波長275 nm帯）の初期劣化メカニズムを解明－ Myself

    Tohoku University　Press Releases

    2023/05/19

    Type: Internet

  3. 東北大など、次世代半導体の寿命長く 材料の製造法開発

    日本経済新聞

    2022/07/01

    Type: Newspaper, magazine

  4. 低圧超臨界相の活用で従来以上に高品質な窒化ガリウム結晶を作製 －実験炉で反りがなく高純度な窒化ガリウム結晶成長を実証 Myself

    Tohoku University　Press Releases

    2022/05/26

    Type: Internet

  5. 混ざり合わない混晶半導体の特異構造を利用した高効率光源実現に道 －窒化アルミニウムインジウム超格子の自己組織化メカニズムを解明－ Myself

    Tohoku University　Press Releases

    2020/11/05

    Type: Internet

  6. 室温動作ポラリトンレーザの実現に向けて大きな前進 －超低消費電力な近紫外線コヒーレント光源の実現に道－ Myself

    Tohoku University　Press Releases

    2020/08/31

    Type: Internet

  7. 省エネルギーに資する窒化ガリウム単結晶基板の量産法を開発 －次世代パワーエレクトロニクスの実現に道－ Myself

    Tohoku University　Press Releases

    2020/06/01

    Type: Internet

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Academic Activities 1

  1. 13th GMSI-COSM-UT2 2014 Graduate Student Workshop (University of Tokyo – University of Toronto)

    2014/06/09 - 2014/06/12

    Activity type: Competition, symposium, etc.