Details of the Researcher

PHOTO

Tang Jingmin
Section
International Center for Synchrotron Radiation Innovation Smart
Job title
Assistant Professor

Research History 3

  • 2024/10 - Present
    Tohoku University

  • 2023/04 - 2025/03
    The University of Tokyo

  • 2019/10 - 2023/03
    NIMS

Education 2

  • Kyushu University Faculty of Engineering

    2019/10 - 2023/03

  • Hiroshima University Faculty of Science

    2016/10 - 2018/09

Research Areas 2

  • Energy / Quantum beam science /

  • Natural sciences / Bio-, chemical, and soft-matter physics /

Papers 11

  1. Non-uniform interval-pulse X-ray photon correlation spectroscopy for reduced exposure

    Taiki Hoshino, Jingmin Tang

    Journal of Synchrotron Radiation 33 (2) 2026/02/18

    Publisher: International Union of Crystallography (IUCr)

    DOI: 10.1107/s160057752600038x  

    eISSN: 1600-5775

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    X-ray photon correlation spectroscopy (XPCS) is a powerful technique for evaluating microscopic dynamics using coherent X-rays. Detecting fast or small-scale dynamics typically requires strong illumination and wide-angle scattering detection; however, such conditions can cause non-negligible sample damage. This study presents a non-uniform pulse-interval XPCS approach that enables quantitative dynamical analysis with substantially reduced X-ray exposure. In conventional XPCS, continuous acquisition at uniform time intervals leads to long cumulative exposure, which can introduce radiation-induced artefacts. In this study, only 11 scattering images were recorded at non-uniform intervals, providing a broad range of delay times from a single measurement and enabling dense temporal sampling without increasing the exposure dose. The resulting dataset was analyzed using both XPCS- and X-ray speckle visibility spectroscopy (XSVS)-based schemes, and the results demonstrated that these two independent analyses yield consistent relaxation behaviors. The proposed approach offers an efficient framework for probing complex or non-Brownian dynamics in radiation-sensitive materials and expands the applicability of XPCS to soft and biological systems.

  2. Adhesion between a borophane sheet and a metal substrate by interface bonding

    Kazuki Yamaguchi, Heming Yin, Masahito Niibe, Jingmin Tang, Masashige Miyamoto, Yuki Tsujikawa, Haruto Sakurai, Yu Murano, Kenichi Ozawa, Masafumi Horio, Jun-ichi Yamaura, Takahiro Kondo, Iwao Matsuda

    Applied Surface Science Advances 31 100918-100918 2026/01

    Publisher: Elsevier BV

    DOI: 10.1016/j.apsadv.2025.100918  

    ISSN: 2666-5239

  3. Developing a Machine-Learning-based Robotic System for Mixing Solvents

    Jingmin Tang, Takeru Nakashima, Masashige Miyamoto, Xiaoni Zhang, Masafumi Horio, Yasunobu Ando, Iwao Matsuda

    e-Journal of Surface Science and Nanotechnology 2025/01/11

    Publisher: Surface Science Society Japan

    DOI: 10.1380/ejssnt.2025-001  

    eISSN: 1348-0391

  4. Adsorption of Atomic Hydrogen on Hydrogen Boride Sheets Studied by Photoelectron Spectroscopy

    Heming Yin, Jingmin Tang, Kazuki Yamaguchi, Haruto Sakurai, Yuki Tsujikawa, Masafumi Horio, Takahiro Kondo, Iwao Matsuda

    Materials 17 (19) 4806-4806 2024/09/29

    Publisher: MDPI AG

    DOI: 10.3390/ma17194806  

    eISSN: 1996-1944

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    Hydrogen boride (HB) sheets are emerging as a promising two-dimensional (2D) boron material, with potential applications as unique electrodes, substrates, and hydrogen storage materials. The 2D layered structure of HB was successfully synthesized using an ion-exchange method. The chemical bonding and structure of the HB sheets were investigated using Fourier Transform Infrared (FT–IR) spectroscopy and Transmission Electron Microscopy (TEM), respectively. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical states and transformation of the components before and after atomic hydrogen adsorption, thereby elucidating the atomic hydrogen adsorption process on HB sheets. Our results indicate that, upon atomic hydrogen adsorption onto the HB sheets, the B-H-B bonds were broken and converted into B-H bonds. This research highlights and demonstrates the changes in chemical states and component transformations of the boron element on the HB sheets’ surface before and after atomic hydrogen adsorption, thus providing a clearer understanding of the unique bonding and structural characteristics of the HB sheets.

  5. Atomic Structures and Chemical states of active and inactive dopants in GaN

    Yoshiyuki Yamashita, Jingmin Tang, Yusuke Hashimote, Tomohiro Matsushita

    ECS Transactions 112 (2) 67-75 2023/09/29

    Publisher: The Electrochemical Society

    DOI: 10.1149/11202.0067ecst  

    ISSN: 1938-5862

    eISSN: 1938-6737

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    We investigated atomic structures and chemical states of active and inactive dopant sites for Mg- and Si- doped in GaN using photoelectron holography and X-ray absorption near edge structure. In the case of Mg-doped GaN, we found that a Mg atom substituting a Ga atom (MgGa) is an active dopant site in GaN whereas MgGa with two H atoms is an inactive dopant site in GaN. We found that a Si atom substituting a Ga atom is an active dopant site in Si-doped GaN whereas Si3N4 is an inactive dopant site in GaN.

  6. X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

    Yuhua Tsai, Jingmin Tang, Yoshiyuki Yamashita

    ACS Applied Electronic Materials 5 (7) 3843-3850 2023/06/22

    Publisher: American Chemical Society (ACS)

    DOI: 10.1021/acsaelm.3c00546  

    ISSN: 2637-6113

    eISSN: 2637-6113

  7. Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

    Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita

    ACS Applied Electronic Materials 4 (9) 4719-4723 2022/09/15

    Publisher: American Chemical Society (ACS)

    DOI: 10.1021/acsaelm.2c00912  

    ISSN: 2637-6113

    eISSN: 2637-6113

  8. Chemical States of Active and Inactive Dopant Sites in Si-doped GaN(0001)

    Yoshiyuki YAMASHITA, Jingmin TANG

    Vacuum and Surface Science 65 (7) 309-314 2022/07/10

    Publisher: Surface Science Society Japan

    DOI: 10.1380/vss.65.309  

    ISSN: 2433-5835

    eISSN: 2433-5843

  9. Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN

    Jingmin Tang, Yoshiyuki Yamashita

    ACS Applied Electronic Materials 3 (10) 4618-4622 2021/10/08

    Publisher: American Chemical Society (ACS)

    DOI: 10.1021/acsaelm.1c00766  

    ISSN: 2637-6113

    eISSN: 2637-6113

  10. 1% defect enriches MoS2 quantum dot: Catalysis and blue luminescence

    Jingmin Tang, Masanori Sakamoto, Haruhisa Ohta, Ken-Ichi Saitow

    Nanoscale 12 (7) 4352-4358 2020/02/21

    Publisher: Royal Society of Chemistry

    DOI: 10.1039/c9nr07612c  

    ISSN: 2040-3372 2040-3364

  11. Photocatalysis of layered MoS2 prepared by sonication in a mixed-solvent

    Jingmin Tang, Masanori Sakamoto, Yufeng Wang, Ken-ichi Saitow

    JSAP-OSA Joint Symposia 2017 Abstracts 78th 8a_PB2_11-8a_PB2_11 2017

    Publisher: Optica Publishing Group

    DOI: 10.1364/jsap.2017.8a_pb2_11  

    ISSN: 2758-4704

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    Molybdenum disulfide (MoS2) composed of layer structure attracts much attention as a semiconductor material, whose band gap energy is changed from 1.29 eV as an indirect transition to 1.85 eV as a direct one, by changing the number of layers. Here, we show the exfoliation of MoS2 using sonication in a mixed solvent (H2O and ethanol). The results of Raman spectra and atomic force microscope and transmission electron microscope images reveal that the exfoliated MoS2 is composed of a few layers. Photocatalysis of the prepared MoS2 was investigated by the degradation of a dye solution of methyl orange (MO) by irradiating light at the wavelength of 450 nm. As a result, the dye solution became colorless under the existence of the layered MoS2 as a function of irradiation time. Note that the absorption band of MO disappears at around 460 nm, whereas a new band emerges at around 240 nm. This new band is considered as a hydrazine molecule, which can be produced from the photocatalytic reaction via the decomposition of MO.

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Misc. 4

  1. Atomic structures and chemical states for active and inactive Mg dopant sites in GaN

    Yamashita Yoshiyuki, Yamashita Yoshiyuki, Tang Jingmin, Tang Jingmin, Hashimoto Yusuke, Matsushita Tomohiro

    日本表面真空学会学術講演会要旨集(Web) 2023 2023

    ISSN: 2434-8589

  2. Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN (0001)

    TANG Jingmin, TANG Jingmin, HASHIMOTO Yusuke, MATSUSHITA Tomohiro, MATSUSHITA Tomohiro, YAMASHITA Yoshiyuki, YAMASHITA Yoshiyuki

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

    ISSN: 2758-4704

  3. Atomic structure and chemical state in active dopant sites of Si-dopant in GaN

    山下良之, 山下良之, TANG Jingmin, TANG Jingmin

    日本表面真空学会学術講演会要旨集(Web) 2021 2021

    ISSN: 2434-8589

  4. Active and inactive dopant sites in Si-doped GaN (0001)

    TANG Jingmin, YAMASHITA Yoshiyuki, TANG Jingmin, YAMASHITA Yoshiyuki

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021

    ISSN: 2758-4704