Details of the Researcher

PHOTO

Yoshiaki Saito
Section
Center for Innovative Integrated Electronic Systems
Job title
Professor
Degree

  • 理学博士（筑波大学）

  • 理学修士（筑波大学）

Research History 2

  • 2017/10 - Present
    Tohoku University

  • 1990/04 - 2017/09
    株式会社 東芝 研究開発センター　研究主幹 (2008年～2017年)

Education 2

  • University of Tsukuba　Graduate School, Division of Physics

    - 1990/03

  • University of Tsukuba

    - 1985/03/25

Professional Memberships 5

  • 日本物理学会

  • 応用物理学会

  • 日本磁気学会

  • 米国物理学会（ＡＰＳ）

  • IEEE

Research Interests 4

  • applied physics

  • constructional and functional materials

  • nano-device

  • spintronics

Research Areas 3

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

  • Nanotechnology/Materials / Crystal engineering /

  • Nanotechnology/Materials / Applied materials /

Papers 188

  1. Strong antiferromagnetic interlayer exchange coupling induced by small additions of Re to an Ir interlayer in synthetic antiferromagnetic systems Peer-reviewed

    Yoshiaki Saito, Tufan Roy, Shoji Ikeda, Masafumi Shirai, Hiroaki Honjo, Hirofumi Inoue, Tetsuo Endoh

    Scientific Reports　15　(1)　8977-1-8977-8　2025/03/15

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41598-025-94088-w 　

    eISSN： 2045-2322

  2. Enhanced field-like torque generated from the anisotropic spin-split effect in triple-domain RuO2 for energy-efficient spin–orbit torque magnetic random-access memory Peer-reviewed

    T. V. A. Nguyen, H. Naganuma, T. N. H. Vu, S. DuttaGupta, Y. Saito, D. Vu, Y. Endo, S. Ikeda, T. Endoh

    Adv. Sci.　12　2413165-1-2413165-8　2025/03

    DOI： 10.1002/advs.202413165 　

  3. Enhancement of damping-like spin-orbit torque efficiency using light and heavy nonmagnetic metals on a polycrystalline RuO2 layer Peer-reviewed

    Y. Saito, S. Ikeda, S. Karube, T. Endoh

    Phys. Rev. B　110　134423-1-134423-10　2024/10

    DOI： 10.1103/PhysRevB.110.134423 　

  4. Investigation of the dynamic magnetic properties in RuO2/Co-Fe-B stack film Peer-reviewed

    T. V. A. Nguyen, Y. Saito, H. Naganuma, D. Vu, S. Ikeda, T. Endoh

    IEEE Transactions on Magnetics　60　(9)　2200305-1-2200305-5　2024/09

    DOI： 10.1109/TMAG.2024.3404066 　

  5. Field-free spin-orbit torque switching and large damping-like spin-orbit torque efficiency in synthetic antiferromagnetic systems using interfacial Dzyaloshinskii-Moriya interaction Peer-reviewed

    Yoshiaki Saito, Shoji Ikeda, Nobuki Tezuka, Hirofumi Inoue, Tetsuo Endoh

    Physical Review B　108　(2)　024419-1-024419-11　2023/07

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevb.108.024419 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  6. Charge-to-Spin Conversion Efficiency in Synthetic Antiferromagnetic System using Pt-Cu/Ir/Pt-Cu spacer layers Peer-reviewed

    Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh

    IEEE Transactions on Magnetics　59　(11)　1300405-1-1300405-5　2023/06

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/tmag.2023.3282626 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  7. Magnetic Switching Properties for Synthetic Antiferromagntic Layers with Perpendicular Easy Magnetic Anisotropy Peer-reviewed

    N. Tezuka, S. Fujikawa, H. Akatani, M. Matsuura, S. Sugimoto, Y. Saito

    2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)　2023/05

    Publisher: IEEE

    DOI： 10.1109/intermagshortpapers58606.2023.10228461 　

  8. Enhancement of Damping-Like Spin-Orbit-Torque Efficiency in Synthetic Antiferromagnetic System using Pt-Cu Alloy Peer-reviewed

    Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh

    2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)　2023/05

    Publisher: IEEE

    DOI： 10.1109/intermagshortpapers58606.2023.10228766 　

  9. Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system Peer-reviewed

    Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

    Applied Physics Express　16　(1)　013002-013002　2023/01/01

    Publisher: IOP Publishing

    DOI： 10.35848/1882-0786/acb311 　

    ISSN： 1882-0778

    eISSN： 1882-0786

    More details Close

    Abstract The correlation between the magnitude of interlayer exchange coupling (Jex) and charge-to-spin conversion efficiency (spin Hall angle: θSH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θSH increases linearly with increasing the magnitude of Jex. We observe the factor of 6.5 increase of spin Hall angle (θSH = 45.8%) in a low resistive (ρxx = 41 μΩcm) synthetic AF system by increasing the magnitude of Jex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.

  10. Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields Peer-reviewed

    T. V. A. Nguyen, Y. Saito, H. Naganuma, S. Ikeda, T. Endoh, Y. Endo

    AIP Advances　12　(3)　035133-1-035133-5　2022/03/01

    Publisher: AIP Publishing

    DOI： 10.1063/9.0000297 　

    eISSN： 2158-3226

    More details Close

    Dynamic magnetic properties of Ta-O/Co20Fe60B20 bilayer films are strongly influenced by the oxidation condition of the Ta-O layer. The oxidation of the Ta-O layer by a slight amount of oxygen with a pressure ( POxygen) of 0.03 Pa decreases in-plane damping constant ( αIP), and increases the effective magnetization (4π Ms,eff). Then, both αIP and 4π Ms,eff maintain their values by increasing POxygen up to 0.3 Pa. The out-of-plane damping constant ( αOP) showed a similar tendency to that of αIP against POxygen, although αOP is much smaller than αIP in every POxygen. αOP reaches to 0.0033 for sample oxidized at 0.03 Pa. It was suggested that αIP consists of both the intrinsic damping and the extrinsic damping, while αOP is closer to the intrinsic damping. The control of αOP and αIP by the oxidation would be beneficial in designing the high frequency spintronic devices.

  11. Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer Peer-reviewed

    Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

    Physical Review B　105　(5)　054421-1-054421-11　2022/02/22

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevb.105.054421 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  12. Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin–orbit torque devices Peer-reviewed

    Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

    Applied Physics Letters　119　(14)　142401-1-142401-7　2021/10/04

    Publisher: AIP Publishing

    DOI： 10.1063/5.0063317 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  13. Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers Peer-reviewed

    Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Tetsuo Endoh

    Physical Review B　104　(6)　064439-1-064439-11　2021/08/23

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevb.104.064439 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  14. W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer Peer-reviewed

    Y. Saito, N. Tezuka, S. Ikeda, T. Endoh

    AIP Advances　11　(2)　025007-1-025007-6　2021/02

    DOI： 10.1063/9.0000011 　

    eISSN： 2158-3226

  15. Study of spin transport and magnetoresistance effect in silicon-based lateral spin devices for spi -MOSFET applications Peer-reviewed

    M. Ishikawa, Y. Saito, and K. Hamaya

    J. Magn. Soc. Jpn　44　(3)　56-63　2020/05

    DOI： 10.3379/msjmag.2005RV002 　

    ISSN： 0285-0192

    eISSN： 1882-2932

  16. Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system Peer-reviewed

    Saito, Y., Tezuka, N., Ikeda, S., Endoh, T.

    Applied Physics Letters　116　(13)　132401-1-132401-5　2020/03

    DOI： 10.1063/5.0002642 　

  17. Spin Hall effect investigated by spin Hall magnetoresistance in Pt<inf>100-x</inf>Au<inf>x</inf>/CoFeB systems Peer-reviewed

    Saito, Y., Tezuka, N., Ikeda, S., Sato, H., Endoh, T.

    AIP Advances　9　(12)　125312-1-125312-5　2019/12

    DOI： 10.1063/1.5129889 　

  18. Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W<inf>100-x</inf>Ta<inf>x</inf>/CoFeB systems Peer-reviewed

    Saito, Y., Tezuka, N., Ikeda, S., Sato, H., Endoh, T.

    Applied Physics Express　12　(5)　053008-1-053008-6　2019/05

    DOI： 10.7567/1882-0786/ab1a66 　

  19. Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve device Peer-reviewed

    M. Ishikawa, M. Tsukahara, S. Honda, Y. Fujita, M. Yamada, Y. Saito, T. Kimura, H. Itoh, K. Hamaya

    J. Phys. D: Appl. Phys.　52　(8)　085102-1-085102-8　2018/12

    DOI： 10.1088/1361-6463/aaf37c 　

    ISSN： 0022-3727

    eISSN： 1361-6463

  20. Local magnetoresistance at room temperature in Si devices Peer-reviewed

    Ishikawa, M., Tsukahara, M., Yamada, M., Saito, Y., Hamaya, K.

    IEEE Transactions on Magnetics　54　(11)　1400604-1-1400604-4　2018/11

    DOI： 10.1109/TMAG.2018.2849753 　

  21. Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta- B Spin Hall Electrode Peer-reviewed

    Kato, Y., Saito, Y., Yoda, H., Inokuchi, T., Shirotori, S., Shimomura, N., Oikawa, S., Tiwari, A., Ishikawa, M., Shimizu, M., Altansargai, B., Sugiyama, H., Koi, K., Ohsawa, Y., Kurobe, A.

    Physical Review Applied　10　(4)　044011-1-044011-11　2018/10

    DOI： 10.1103/PhysRevApplied.10.044011 　

  22. Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system Peer-reviewed

    Yushi Kato, Hiroaki Yoda, Yoshiaki Saito, Soichi Oikawa, Keiko Fujii, Masahiko Yoshiki, Katsuhiko Koi, Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Naoharu Shimomura, Mariko Shimizu, Satoshi Shirotori, Buyandalai Altansargai, Yuichi Ohsawa, Kazutaka Ikegami, Ajay Tiwari, Atsushi Kurobe

    Applied Physics Express　11　(5)　053007-1-053007-5　2018/05/01

    Publisher: Japan Society of Applied Physics

    DOI： 10.7567/APEX.11.053007 　

    ISSN： 1882-0786 1882-0778

  23. Reliable Estimation of TaB Spin Hall Angle by Incorporating the Interfacial Transparency and Isolating Inverse Spin Hall Effect in ST-FMR Analysis Peer-reviewed

    A. Tiwari, H. Yoda, Y. Kato, K. Koi, M. Ishikawa, S. Oikawa, Y. Saito, T. Inokuchi, N. Shimomura, M. Shimizu, S. Shirotori, B. Altansargai, H. Sugiyama, Y. Ohsawa, A. Kurobe

    IEEE International magnetic conference 2018 (Intermag 2018)　ED-07　2018/04/26

  24. High-speed voltage-control spintronics memory focused on reduction in write current Peer-reviewed

    H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, N. Shimomura, Y. Saito, A. Kurobe

    2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings　2017-　1-5　2017/12/08

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.1109/NVMTS.2017.8171311 　

  25. Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode Peer-reviewed

    S. Shirotori, H. Yoda, Y. Ohsawa, N. Shimomura, T. Inokuchi, Y. Kato, Y. Kamiguchi, K. Koi, K. Ikegami, H. Sugiyama, M. Shimizu, B. Altansargai, S. Oikawa, M. Ishikawa, A. Tiwari, Y. Saito, A. Kurobe

    IEEE TRANSACTIONS ON MAGNETICS　53　(11)　252404-1-252404-4　2017/11

    DOI： 10.1109/TMAG.2017.2691764 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  26. Giant voltage-control-magnetic-anisotropy (VCMA) effect in crystallographic strained CoFe system Peer-reviewed

    Y. Kato, Y. Saito, H. Yoda, N. Shimomura, S. Shirotori, S. Oikawa, M. Ishikawa, T. Inokuchi, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, Y. Ohsawa, K. Ikegami, Y. Kamiguchi, A. Tiwari, A. Kurobe

    Proceedings of 62th annual Magnetism & Magnetic Materials Conference (MMM2017)　2017/11

  27. Radical improvement of write efficiency in Voltage Control Spintronics Memory (VoCSM) by development of TaB Spin-Hall electrode Peer-reviewed

    Y. Kato, Y. Saito, H. Yoda, N. Shimomura, S. Shirotori, S. Oikawa, M. Ishikawa, T. Inokuchi, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, Y. Ohsawa, K. Ikegami, Y. Kamiguchi, A. Tiwari, A. Kurobe

    62th annual Magnetism & Magnetic Materials Conference (MMM2017)　2017/11

  28. Switching mechanism design for high-speed Voltage-Control Spintronics Memory (VoCSM) considering the operation window Peer-reviewed

    K. Koi, H. Yoda, N. Shimomura, T. Inokuchi, Y. Kato, A. Buyandalai, S. Shirotori, Y. Kamiguchi, K. Ikegami, S. Oikawa, H. Sugiyama, M. Shimizu, M. Ishikawa, T. Ajay, Y. Ohsawa, Y. Saito, A. Kurobe

    roceedings of 2017 International conference on solid state devices and materials (SSDM 2017)　2017/09

  29. Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency Peer-reviewed

    M. Shimizu, H. Yoda, S. Shirotori, N. Shimomura, Y. Ohsawa, T. Inokuchi, K. Koi, Y. Kato, S. Oikawa, H. Sugiyama, B. Altansargai, M. Ishikawa, K. Ikegami, Y. Kamiguchi, Y. Saito, A. Kurobe

    Proceedings of 2017 International conference on solid state devices and materials (SSDM 2017)　2017/09

  30. Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height Peer-reviewed

    T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, B. Altansargai, A. Tiwari, Y. Ohsawa, Y. Saito, A. Kurobe

    APPLIED PHYSICS LETTERS　110　(25)　252404-1-252404-4　2017/06

    DOI： 10.1063/1.4986923 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  31. Spin relaxation mechanism in heavily doped n-type silicon Peer-reviewed

    M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, K. Hamaya

    Spintech IX　2017/06

  32. Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer Peer-reviewed

    Y. Saito, T. Inokuchi, M. Ishikawa, T. Ajay, H. Sugiyama

    AIP ADVANCES　7　(5)　055937-1-055937-6　2017/05

    DOI： 10.1063/1.4978583 　

    ISSN： 2158-3226

  33. Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si on insulator devices Peer-reviewed

    Ajay Tiwari, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Nobuki Tezuka, Yoshiaki Saito

    Japanese Journal of Applied Physics　56　(4)　04CD05-1-04CD05-5　2017/04/01

    Publisher: Japan Society of Applied Physics

    DOI： 10.7567/JJAP.56.04CD05 　

    ISSN： 1347-4065 0021-4922

  34. Voltage-Control Spintronics Memory (VoCSM) with a self-aligned heavy-metal electrode Peer-reviewed

    S. Shirotori, H. Yoda, Y. Ohsawa, N. Shimomura, T. Inokuchi, Y. Kato, Y. Kamiguchi, K. Koi, K. Ikegami, H. Sugiyama, M. Shimizu, A. Buyandalai, S. Oikawa, M. Ishikawa, T. Ajay, Y. Saito, A. Kurobe

    IEEE International magnetic conference 2017 (Intermag 2017)　2017/04

  35. Magnetoresistance ratio through Si semiconductor using a magnetic tunnel junction Peer-reviewed

    N. Tezuka, S. Oikawa, M. Matsuura, S. Sugimoto, Y. Saito

    IEEE International magnetic conference 2017 (Intermag 2017)　CN-13　2017/04

  36. Spin relaxation through lateral spin transport in heavily doped n-type silicon Peer-reviewed

    M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, K. Hamaya

    PHYSICAL REVIEW B　95　(11)　115302-1-115302-6　2017/03

    DOI： 10.1103/PhysRevB.95.115302 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  37. Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density Peer-reviewed

    H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, A. Kurobe

    Technical Digest - International Electron Devices Meeting, IEDM　27.6.1-27.6.4　2017/01/31

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.1109/IEDM.2016.7838495 　

    ISSN： 0163-1918

  38. High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM) Peer-reviewed

    H. Yoda, H. Sugiyama, T. Inokuchi, Y. Kato, Y. Ohsawa, K. Abe, N. Shimomura, Y. Saito, S. Shirotori, K. Koi, B. Altansargai, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, Y. Kamiguchi, S. Fujita, A. Kurobe

    2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW)　7939085　165-168　2017

    DOI： 10.1109/IMW.2017.7939085 　

    ISSN： 2330-7978

  39. Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer Peer-reviewed

    Y. Saito, T. Inokuchi, M. Ishikawa, A. Tiwari, H. Sugiyama

    61th annual Magnetism & Magnetic Materials Conference (MMM2016)　2016/11

  40. Room temperature observation of large spin accumulation and transport signals in post annealed Co2FeSi/MgO/n+-Si on insulator devices Peer-reviewed

    A. Tiwari, T. Inokuchi, M. Ishikawa, H. Sugiyama, N. Tezuka, Y. Saito

    2016 International conference on solid state devices and materials (SSDM 2016)　2016/09

  41. Spin-dependent transport mechanisms in CoFe/MgO/n(+)-Si junctions investigated by frequency response of signals Peer-reviewed

    Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

    APPLIED PHYSICS EXPRESS　9　(7)　073002-1-073002-4　2016/07

    DOI： 10.7567/APEX.9.073002 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  42. Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/n(+)-Si on insulator devices Peer-reviewed

    Ajay Tiwari, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Nobuki Tezuka, Yoshiaki Saito

    AIP ADVANCES　6　(7)　075119-1-075119-9　2016/07

    DOI： 10.1063/1.4960210 　

    ISSN： 2158-3226

  43. Spin accumulation signals in CoFe/MgO/n+-Si devices deposited on Si (1×1) and Si (2×1) surfaces Peer-reviewed

    Yoshiaki Saito, Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Kohei Hamaya, Nobuki Tezuka

    Joint MMM/Intermag Conference, 2016　2016/01

  44. Spin Injection, Transport, and Detection in a Lateral Spin Transport Devices with Co2FeAl0.5Si0.5/n-GaAs, Co2FeSi/MgO/n-Si, and CoFe/MgO/n-Si Junctions Peer-reviewed

    Nobuki Tezuka, Yoshiaki Saito

    MATERIALS TRANSACTIONS　57　(6)　767-772　2016

    DOI： 10.2320/matertrans.ME201502 　

    ISSN： 1345-9678

    eISSN： 1347-5320

  45. Voltage-Control Spintronics Memory (VoCSM) Having Potentials of Ultra-Low Energy-Consumption and High-Density Peer-reviewed

    H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, A. Kurobe

    2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　27.6.1-27.6.4　2016

    DOI： 10.1109/IEDM.2016.7838495 　

    ISSN： 2380-9248

  46. Influence of Si surface on spin accumulation and transport signals in CoFe/MgO/n+-Si junctions Peer-reviewed

    Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Nobuki Tezuka, Kohei Hamaya, Yoshiaki Saito

    2015 International conference on solid state devices and materials (SSDM 2015)　2015/09

  47. Spin transport and accumulation in n(+)-Si using Heusler compound Co2FeSi/MgO tunnel contacts Peer-reviewed

    Mizue Ishikawa, Hideyuki Sugiyama, Tomoaki Inokuchi, Kohei Hamaya, Yoshiaki Saito

    APPLIED PHYSICS LETTERS　107　(9)　092402-1-092402-5　2015/08

    DOI： 10.1063/1.4929888 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  48. Influence of miniaturization of the CoFe/MgO/n+-Si devices on magnitude of magnetoresistance Peer-reviewed

    Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito, Nobuki Tezuka

    International Colloquium on Magnetic Films and Surfaces 2015 (ICMFS 2015)　2015/06

  49. Spin accumulation and transport signals in Heusler Co2FeSi/MgO/n+-Si on insulator devices Peer-reviewed

    Yoshiaki Saito, Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Kohei Hamaya, Nobuki Tezuka

    20th International conference on Magnetism (ICM 2015)　2015/06

  50. Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n(+)-Si junctions Peer-reviewed

    Y. Saito, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka

    JOURNAL OF APPLIED PHYSICS　117　(17)　17C707-01-17C707-04　2015/05

    DOI： 10.1063/1.4907242 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  51. Ferromagnet/tunnel barrier/n+-Si junction technology for spin-FETs Invited Peer-reviewed

    Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama

    International Workshop on Junction Technology 2015 (IWJT 2015)　2015

  52. Dependence of spin-dependent transport signals on measurement frequency in CoFe/MgO/n(+)-Si junctions. Peer-reviewed

    T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito

    2015 IEEE MAGNETICS CONFERENCE (INTERMAG)　GP-09　2015

  53. Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n(+)-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy Peer-reviewed

    Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Tetsufumi Tanamoto, Yoshiaki Saito

    APPLIED PHYSICS LETTERS　105　(23)　232401-1-232401-4　2014/12

    DOI： 10.1063/1.4903478 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  54. Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions Peer-reviewed

    Yoshiaki Saito, Mizue Ishikawa, Tetsufumi Tanamoto, Tomoaki Inokuchi, Hideyuki Sugiyama, Kohei Hamaya, Nobuki Tezuka

    59th annual Magnetism & Magnetic Materials Conference (MMM2014)　2014/11

  55. Influence of interface roughness in CoFe/MgO/n+-Si junctions on spin accumulation and spin transport signals Peer-reviewed

    Mizue Ishikawa, Hideyuki Sugiyama, Tomoaki Inokuchi, Tetsufumi Tanamoto, Kohei Hamaya, Nobuki Tezuka, Yoshiaki Saito

    59th annual Magnetism & Magnetic Materials Conference (MMM2014)　2014/11

  56. Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices Peer-reviewed

    H. Sugiyama, M. Ishikawa, T. Inokuchi, T. Tanamoto, Y. Saito, N. Tezuka

    SOLID STATE COMMUNICATIONS　190　49-52　2014/07

    DOI： 10.1016/j.ssc.2014.03.019 　

    ISSN： 0038-1098

    eISSN： 1879-2766

  57. Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves Peer-reviewed

    Y. Saito, T. Tanamoto, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka

    JOURNAL OF APPLIED PHYSICS　115　(17)　17C514-1-17C514-3　2014/05

    DOI： 10.1063/1.4866699 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  58. Effects of interface electric field on the magnetoresistance in spin devices Peer-reviewed

    T. Tanamoto, M. Ishikawa, T. Inokuchi, H. Sugiyama, Y. Saito

    JOURNAL OF APPLIED PHYSICS　115　(16)　163907-1-163907-7　2014/04

    DOI： 10.1063/1.4872137 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  59. Effects of interface electric field on the magnetoresistance in spin devices Peer-reviewed

    T. Tanamoto, M. Ishikawa, T. Inokuchi, H. Sugiyama, Y. Saito

    JOURNAL OF APPLIED PHYSICS　115　(16)　2014/04

    DOI： 10.1063/1.4872137 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  60. Spin injection, detection and local magnetoresistance through Si at room temperature in ferrmagnet/MgO/Si lateral spin valves Invited Peer-reviewed

    Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, N. Tezuka, K. Hamaya

    IEEE International nanoelectronics conference, 2014 (IEEE INEC 2014)　2014

  61. Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices Peer-reviewed

    M. Ishikawa, H. Sugiyama, T. Inokuchi, T. Tanamoto, K. Hamaya, N. Tezuka, Y. Saito

    JOURNAL OF APPLIED PHYSICS　114　(24)　243904-1-243904-6　2013/12

    DOI： 10.1063/1.4856955 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  62. Local magnetoresistance through Si at room temperature and its bias voltage dependence in CoFe/MgO/SOI lateral spin valves Peer-reviewed

    Y. Saito, T. Tanamoto, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka

    58th Annual Conference on Magnetism and Magnetic Materials (2013 MMM Conference)　HB-04　2013/11

  63. Inelastic electron tunneling spectroscopy study of CoFe/MgO/n+-Si junctions Peer-reviewed

    T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto, Y. Saito

    58th Annual Conference on Magnetism and Magnetic Materials (2013 MMM Conference)　AX-06　2013/11

  64. Correlation between the intensities of differential conductance curves and the spin accumulation signals in Si for CoFe/MgO/SOI devices Peer-reviewed

    M. Ishikawa, T. Inokuchi, H. Sugiyama, K. Hamaya, N. Tezuka, Y. Saito

    International conference on solid state devices and materials (SSDM2013)　2013/09

  65. Crystal Structures and Spin Injection Signals of Si/Mg/MgO/Co2FeAl0.5Si0.5 Junctions Peer-reviewed

    Takashi Onodera, Masahiro Yoshida, Nobuki Tezuka, Masashi Matsuura, Satoshi Sugimoto, Yoshiaki Saito

    MATERIALS TRANSACTIONS　54　(8)　1392-1395　2013/08

    DOI： 10.2320/matertrans.M2013139 　

    ISSN： 1345-9678

    eISSN： 1347-5320

  66. Effects of interface resistance asymmetry on local and non-local magnetoresistance structures Peer-reviewed

    Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi, Mizue Ishikawa, Yoshiaki Saito

    Japanese Journal of Applied Physics　52　(4)　2013/04

    DOI： 10.7567/JJAP.52.04CM03 　

    ISSN： 0021-4922 1347-4065

  67. Effects of interface resistance asymmetry on local and non-local magnetoresistance structures Peer-reviewed

    Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi, Mizue Ishikawa, Yoshiaki Saito

    Japanese Journal of Applied Physics　52　(4)　04CM03-1-04CM03-5　2013/04

    DOI： 10.7567/JJAP.52.04CM03 　

    ISSN： 0021-4922 1347-4065

  68. Crystal structure and spin conduction property of Co2FeAl 0.5Si0.5 full-heusler alloy thin films deposited on Si substrates Peer-reviewed

    Masahiro Yoshida, Takashi Onodera, Nobuki Tezuka, Satoshi Sugimoto, Yoshiaki Saito

    Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals　77　(3)　85-88　2013/03

    DOI： 10.2320/jinstmet.77.85 　

    ISSN： 0021-4876

  69. A Reconfigurable Architecture based on spin MOSFET Invited Peer-reviewed

    T. Tanamoto, H. Sugiyama, T. Inokuchi, M. Ishikawa, Y. Saito

    Trends in nanotechnology (TNT2013)　2013

  70. Spin accumulation in Si for CoFe/MgO/Mg/Si-on-insulator devices Peer-reviewed

    H. Sugiyama, M. Ishikawa, T. Inokuchi, H. T. Tanamoto, K. Hamaya, Y. Saito, N. Tezuka

    Joint MMM/Intermag Conference, 2013　2013/01

  71. Fabrication of (001)-Oriented MgO Thin Films on Si Substrates Peer-reviewed

    Takashi Onodera, Masahiro Yoshida, Nobuki Tezuka, Satoshi Sugimoto, Yoshiaki Saito

    JOURNAL OF THE JAPAN INSTITUTE OF METALS　77　(3)　89-93　2013

    DOI： 10.2320/jinstmet.77.89 　

    ISSN： 0021-4876

    eISSN： 1880-6880

  72. Spin-Based MOSFETs for Logic and Memory Applications and Spin Accumulation Signals in CoFe/Tunnel Barrier/SOI Devices Invited Peer-reviewed

    Yoshiaki Saito, Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Tetsufumi Tanamoto, Kohei Hamaya, Nobuki Tezuka

    IEEE TRANSACTIONS ON MAGNETICS　48　(11)　2739-2745　2012/11

    DOI： 10.1109/TMAG.2012.2202277 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  73. Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/MgO/SOI devices Peer-reviewed

    M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka, Y. Saito

    International conference on Solid State Devices and Materials (SSDM2012)　2012/09

  74. Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon Peer-reviewed

    M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, Y. Saito

    APPLIED PHYSICS LETTERS　100　(25)　2012/06

    DOI： 10.1063/1.4728117 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  75. Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon Peer-reviewed

    M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, Y. Saito

    APPLIED PHYSICS LETTERS　100　(25)　252404-1-252404-4　2012/06

    DOI： 10.1063/1.4728117 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  76. Spin injection and detection between CoFe/AlOx junctions and SOI investigated by Hanle effect measurements Peer-reviewed

    Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito, Nobuki Tezuka

    JOURNAL OF APPLIED PHYSICS　111　(7)　07C316-1-07C316-3　2012/04

    DOI： 10.1063/1.3677930 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  77. Spin injection and detection between CoFe/AlOx junctions and SOI investigates by Hanle effect measurements Peer-reviewed

    T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, N. Tezuka

    56th Annual Conference on Magnetism & Magnetic Materials ( 2011 MMM Conference)　2011/11

  78. Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (vol 109, 07C312, 2011) Peer-reviewed

    Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Kazutaka Ikegami, Yoshiaki Saito

    JOURNAL OF APPLIED PHYSICS　110　(5)　2011/09

    DOI： 10.1063/1.3633243 　

    ISSN： 0021-8979

  79. Spin injection, transport, and read/write operation in spin-based MOSFET Invited Peer-reviewed

    Yoshiaki Saito, Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Tetsufumi Tanamoto

    THIN SOLID FILMS　519　(23)　8266-8273　2011/09

    DOI： 10.1016/j.tsf.2011.03.073 　

    ISSN： 0040-6090

  80. Effect of bias voltage and interdiffusion in Ir-Mn exchange-biased double tunnel junctions Peer-reviewed

    Y. Saito, M. Amano, K. Nakajima, S. Takahashi, M. Sagoi, K. Inomata

    IEEE International Magnetics Conference (Intermag 2001)　2011/05

    DOI： 10.1109/20.951027 　

  81. Scalability of spin field programmable gate arrary: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor Peer-reviewed

    Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Kazutaka Ikegami, Yoshiaki Saito

    JOURNAL OF APPLIED PHYSICS　109　(7)　07C312-1-07C312-3　2011/04

    DOI： 10.1063/1.3537923 　

    ISSN： 0021-8979

  82. スピンMOSFETを用いたスピンFPGAのベンチマーク

    棚本 哲史, 杉山 英行, 井口 智明, 丸亀 孝生, 石川 瑞恵, 池上 一隆, 斉藤 好昭

    応用物理学会学術講演会講演予稿集　2011.1　2124-2124　2011/03/09

    Publisher: 公益社団法人 応用物理学会

    DOI： 10.11470/jsapmeeting.2011.1.0_2124 　

    eISSN： 2436-7613

  83. Spin-Based MOSFET and Its Applications Peer-reviewed

    Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, T. Tanamoto

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY　158　(10)　H1068-H1076　2011

    DOI： 10.1149/1.3623420 　

    ISSN： 0013-4651

    eISSN： 1945-7111

  84. Spin-based MOSFET and Its Applications Invited Peer-reviewed

    Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, T. Tanamoto

    2011 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT)　37　(1)　217-228　2011

    DOI： 10.1149/1.3600742 　

    ISSN： 1938-5862

  85. Spin-based MOSFET: a promising candidate for beyond CMOS device using nanotechnology Invited Peer-reviewed

    Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto

    he Seventh International Nanotechnology Conference on Communication and Cooperation (INC7)　2011

  86. Spin-based MOSFET and Its Applications Peer-reviewed

    Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, T. Tanamoto

    2011 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT)　37　(1)　217-228　2011

    DOI： 10.1149/1.3600742 　

    ISSN： 1938-5862

  87. Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET Peer-reviewed

    T. Tanamoto, H. Sugiyama, T. Inokuchi, T.Marukame, S. Ishikawa, K. Ikegami, Y. Saito

    55th Annual Conference on Magnetism & Magnetic Materials (2010 MMM Conference)　abs/1104.1493　2010/11

  88. 不揮発再構成可能な回路へのスピンＭＯＳＦＥＴの応用

    杉山 英行, 井口 智明, 丸亀 孝生, 棚本 哲史, 石川 瑞恵, 斉藤 好昭

    応用物理学会学術講演会講演予稿集　2010.2　1823-1823　2010/08/30

    Publisher: 公益社団法人 応用物理学会

    DOI： 10.11470/jsapmeeting.2010.2.0_1823 　

    eISSN： 2436-7613

  89. 多結晶Co2Fe(Al,Si)を用いた強磁性トンネル接合の評価

    石川 瑞恵, 丸亀 孝生, 井口 智明, 杉山 英行, 斉藤 好昭

    応用物理学会学術講演会講演予稿集　2010.1　2065-2065　2010/03/03

    Publisher: 公益社団法人 応用物理学会

    DOI： 10.11470/jsapmeeting.2010.1.0_2065 　

    eISSN： 2436-7613

  90. スピン注入書込み型スピンMOSFETの総合基本動作の実証

    丸亀 孝生, 井口 智明, 石川 瑞恵, 杉山 英行, 斉藤 好昭

    応用物理学会学術講演会講演予稿集　2010.1　2007-2007　2010/03/03

    Publisher: 公益社団法人 応用物理学会

    DOI： 10.11470/jsapmeeting.2010.1.0_2007 　

    eISSN： 2436-7613

  91. Read/Write operation of spin-based MOSFET and the related phenomena Invited Peer-reviewed

    Y. Saito, T. Marukame, M. Ishikawa, T. Inokuchi, H. Sugiyama

    The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI)　2010

  92. Reconfigurable Characteristics of Spintronics-based MOSFETs for Nonvolatile Integrated Circuits Peer-reviewed

    Tomoaki Inokuchi, Takao Marukame, Tetsufumi Tanamoto, Hideyuki Sugiyama, Mizue Ishikawa, Yoshiaki Saito

    2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS　119-120　2010

    DOI： 10.1109/VLSIT.2010.5556194 　

  93. Current-dependent linewidth of a spin-transfer nano-oscillator Peer-reviewed

    R. Sato, Y. Saito, K. Mizushima

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　321　(8)　990-995　2009/04

    DOI： 10.1016/j.jmmm.2008.03.011 　

    ISSN： 0304-8853

  94. Decrease of nonlinearity and linewidth narrowing in spin-transfer oscillators under the external field applied near the hard axis Peer-reviewed

    K. Mizushima, T. Nagasawa, K. Kudo, Y. Saito, R. Sato

    APPLIED PHYSICS LETTERS　94　(15)　152501-1-152501-3　2009/04

    DOI： 10.1063/1.3111435 　

    ISSN： 0003-6951

  95. Electrical Spin Injection into n-GaAs Channels and Detection through MgO/CoFeB Electrodes Peer-reviewed

    Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

    APPLIED PHYSICS EXPRESS　2　(2)　023006-1-023006-3　2009/02

    DOI： 10.1143/APEX.2.023006 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  96. Spin dependent transport between exchange-biased magnetic pinned-layer and magnetic free-layer through lateral GaAs channel Peer-reviewed

    T. Inokuchi, T. Marukame, M. Ishikawa, H. Sugiyama, Y. Saito

    20th ICMFS (20th International Colloquium on Magnetic Films and Surfaces (ICMFS2009)　2009

  97. Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/Mgo tunnel barrier for reconfigurable logic devices Peer-reviewed

    Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

    2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING　196-199　2009

    DOI： 10.1109/IEDM.2009.5424385 　

  98. Electrical spin injection and detection through CoFeB/MgO electrodes in n-GaAs channel Peer-reviewed

    T. Inokuchi, T. Marukame, M. Ishikawa, H. Sugiyama, Y. Saito

    53rd Annual Conference on Magnetism and Magnetic Materials (2008MMM Conference)　2008/11

  99. Novel Look-Up Table Circuits Using Spin MOSFET Peer-reviewed

    H. Sugiyama, T. Tanamoto, T. Marukame, M. Ishikawa, T. Inokuchi, Y. Saito

    2008 International conference on Solid State Devices and Materials (SSDM2008)　2008/09

  100. Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions Peer-reviewed

    Y. Saito, T. Inokuchi, H. Sugiyama, K. Inomata

    EUROPEAN PHYSICAL JOURNAL B　59　(4)　463-469　2007/10

    DOI： 10.1140/epjb/e2007-00083-9 　

    ISSN： 1434-6028

  101. Tenfold Improvement of the Write-Error Rate of Voltage-Control Spintronics Memory (VoCSM) by Controlling Switching Energy Barrier Height Peer-reviewed

    T.Inokuchi, H. Yoda, S. Shirotori, Y. Kato, N. Shimomura, K. Koi, Y. Kamiguchi, K. Ikegami, H. Sugiyama, M. Shimizu, S. Oikawa, M. Ishikawa, A. Buyandalai, T. Ajay, Y. Ohsawa, Y. Saito, A. Kurobe

    IEEE International magnetic conference 2017 (Intermag 2017)　HF-02　2007/04

  102. A novel magnetic tunnel junction structure using the edge of a magnetic film Peer-reviewed

    H. Sugiyama, T. Inokuchi, Y. Saito

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　310　(2)　2003-2005　2007/03

    DOI： 10.1016/j.jmmm.2006.10.918 　

    ISSN： 0304-8853

  103. Effect of Magnetic Field Applied along Hard Axis on Current-Induced Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Peer-reviewed

    T. Inokuchi, Y. Saito, H. Sugiyama, K. Inomata

    J. Mag. Soc. Jpn.　31　(2)　98-102　2007

    Publisher: The Magnetics Society of Japan

    DOI： 10.3379/jmsjmag.31.98 　

    ISSN： 0285-0192

    More details Close

    The dependence of critical current density (Jc) for current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (Hhard) was investigated in CoFeB/MgO/CoFeB magnetic tunnel junctions. The Jc and the intrinsic current density (Jc0), which is derived from the dependence of Jc on pulse duration, decreased as |Hhard| increased. As the reduction ratios of Jc0 while applying Hhard depend on the anisotropy field of junctions (Hk), the initial angle of magnetization, affected by Hhard and Hk, is related to the reduction in Jc0. These results are discussed in terms of the energy barrier for CIMS and the spin transfer efficiency.

  104. Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions Peer-reviewed

    T. Inokuchi, H. Sugiyama, Y. Saito, K. Inomata

    APPLIED PHYSICS LETTERS　89　(10)　102502-1-102502-3　2006/09

    DOI： 10.1063/1.2338016 　

    ISSN： 0003-6951

  105. Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers Peer-reviewed

    Y Saito, H Sugiyama, T Inokuchi, K Inomata

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　303　(1)　34-38　2006/08

    DOI： 10.1016/j.jmmm.2005.10.227 　

    ISSN： 0304-8853

  106. Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers Peer-reviewed

    Y Saito, H Sugiyama, T Inokuchi, K Inomata

    JOURNAL OF APPLIED PHYSICS　99　(8)　8K702-1-8K702-3　2006/04

    DOI： 10.1063/1.2172183 　

    ISSN： 0021-8979

  107. Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers Peer-reviewed

    Y. Saito, H. Sugiyama, T. Inokuchi, K. Inomata

    Journal of Applied Physics　99　(8)　2006

    DOI： 10.1063/1.2172183 　

    ISSN： 0021-8979

  108. Current-induced magnetization switching with applying magnetic field to hard axis in MgO-based magnetic tunnel junctions Peer-reviewed

    T. Inokuchi, H. Sugiyama, Y. Saito, K. Inomata

    INTERMAG 2006 - IEEE International Magnetics Conference　4261700　267-268　2006

    DOI： 10.1109/INTMAG.2006.375849 　

  109. Hard axis magnetic field dependence on current induced magnetization switching in MgO-based magnetic tunnel junctions Invited Peer-reviewed

    Y. Saito, T. Inokuchi, H. Sugiyama, K. Inomata

    The 3rd Asia Forum on Magnetics, 2006　2006

  110. Thermal stability parameters in synthetic antiferromagnetic free layers in magnetic tunnel junctions Peer-reviewed

    Y Saito, H Sugiyama, K Inomata

    JOURNAL OF APPLIED PHYSICS　97　(10)　10C914-1-10C914-3　2005/05

    DOI： 10.1063/1.1853209 　

    ISSN： 0021-8979

  111. Self-differential detection using laminated magnetic tunnel junctions Peer-reviewed

    Y Saito, H Sugiyama, K Inomata

    JOURNAL OF APPLIED PHYSICS　97　(10)　10P502-1-10P502-3　2005/05

    DOI： 10.1063/1.1851427 　

    ISSN： 0021-8979

  112. Self-differential Detection in Self- Differential Element using Laminated Magnetic Tunnel Junctions Peer-reviewed

    Y. Saito, H. Sugiyama, K. Inomata

    49th Magnetism and Magnetic Materials Conference (MMM Conference 2004)　2004/11

  113. Thermal Stability Parameters in Synthetic Antiferromagnetic Free Layers in Magnetic Tunnel Junctions Peer-reviewed

    Y. Saito, H. Sugiyama, K. Inomata

    49th Magnetism and Magnetic Materials Conference (MMM Conference 2004)　2004/11

  114. Long-time annealing and activation energy of the interdiffusion at AlOx/Co-Fe/Ir-Mn interfaces Peer-reviewed

    Y Saito, M Amano, K Nishiyama, Y Asao, K Tsuchida, H Yoda, S Tahara

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　43　(5A)　2484-2488　2004/05

    DOI： 10.1143/JJAP.43.2484 　

    ISSN： 0021-4922

  115. Long-time annealing and activation energy of the interdiffusion at AlO x/Co-Fe/Ir-Mn interfaces Peer-reviewed

    Yoshiaki Saito, Minoru Amano, Katsuya Nishiyama, Yoshiaki Asao, Kenji Tsuchida, Hiroaki Yoda, Shuichi Tahara

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　43　(5 A)　2484-2488　2004

    Publisher: Japan Society of Applied Physics

    DOI： 10.1143/JJAP.43.2484 　

    ISSN： 0021-4922

  116. Future Tunnel Magnetoresistance Technology for High Density MRAM Invited Peer-reviewed

    Y. Saito, H. Sugiyama, K. Inomata

    OXFORD KOBE INSTITUTE SEMINOR, 2004　2004

  117. Improved thermal stability of ferromagnetic tunnel junctions with a CoFe/CoFeOX/CoFe pinned layer Peer-reviewed

    T Ochiai, N Tezuka, K Inomata, S Sugimoto, Y Saito

    IEEE TRANSACTIONS ON MAGNETICS　39　(5)　2797-2799　2003/09

    DOI： 10.1109/TMAG.2003.815715 　

    ISSN： 0018-9464

  118. A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction Peer-reviewed

    S Ikegawa, Y Asao, Y Saito, S Takahashi, T Kai, K Tsuchida, H Yoda

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　42　(7A)　L745-L747　2003/07

    DOI： 10.1143/JJAP.42.L745 　

    ISSN： 0021-4922

  119. Junction area scaling and statistical description of dc breakdown of ferromagnetic tunnel junctions Peer-reviewed

    K Nakajima, Y Asao, Y Saito

    JOURNAL OF APPLIED PHYSICS　93　(11)　9316-9320　2003/06

    DOI： 10.1063/1.1569975 　

    ISSN： 0021-8979

  120. Combination of cold work and heat treatment on stress corrosion cracking susceptibility of l-grade stainless steel

    Katayama, Y., Tsubota, M., Saito, Y.

    NACE - International Corrosion Conference Series　2003-April　2003

    Publisher: NACE - International Corrosion Conference Series

    ISSN： 0361-4409

  121. ピン層にCoFe/CoFeOx/CoFeを用いた強磁性トンネル接合の耐熱性の改善 Peer-reviewed

    落合隆夫, 手束展規, 猪俣浩一郎, 杉本諭, 斉藤好昭

    日本応用磁気学会誌　27　(4)　307-310　2003

    Publisher: The Magnetics Society of Japan

    DOI： 10.3379/jmsjmag.27.307 　

    ISSN： 0285-0192

    More details Close

    The annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for ferromagnetic tunnel junctions with CoFeOx inserted in the pinned layer was investigated. A junction with a CoFe/CoFeOx/CoFe as the pinned layer exhibited TMR ratios of 47 % and 43 % after annealing at 350°C and at 375°C respectively, The reason for the improvement of the thermal stability is related to oxygen diffusion from CoFeOx layer, and there is a possibility that CoFeOx plays a role of Mn (in MnIr exchange layer) diffusion barrier.

  122. MRAM technology using ferromagnetic double tunnel junctions and advanced technology trend for MRAM Invited Peer-reviewed

    Y. Saito, T. Kishi, M. Amano, S. Takahashi, T. Ueda, K. Nishiyama, H. Yoda

    International Colloquium on Magnetic Films and Surfaces, 2003　2003

  123. Improved thermal stability of ferromagnetic tunnel junctions with a CoFe/CoFeOx/CoFe pinned layer Peer-reviewed

    T. Ochiai, N. Tezuka, K. Inomata, S. Sugimoto, Y. Saito

    Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference　1230636　ES05　2003

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.1109/INTMAG.2003.1230636 　

  124. Characterization and modeling of tunnel barrier reliability Peer-reviewed

    K. Nakajima, M. Amano, M. Sagoi, Y. Saito

    INTERMAG Europe 2002 - IEEE International Magnetics Conference　1000782　BB06　2002

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.1109/INTMAG.2002.1000782 　

  125. Effect of bias voltage and interdiffusion in Ir-Mn exchange-biased double tunnel junctions Peer-reviewed

    Y Saito, A Amano, K Nakajima, S Takahashi, M Sagoi, K Inomata

    IEEE TRANSACTIONS ON MAGNETICS　37　(4)　1979-1982　2001/07

    DOI： 10.1109/20.951027 　

    ISSN： 0018-9464

  126. Bias voltage and annealing-temperature dependences of magnetoresistance ratio in Ir-Mn exchange-biased double tunnel junctions Peer-reviewed

    Y Saito, M Amano, K Nakajima, S Takahashi, M Sagoi

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　223　(3)　293-298　2001/02

    DOI： 10.1016/S0304-8853(00)01270-1 　

    ISSN： 0304-8853

  127. Characteristics of annealed dual spin-valve type ferromagnetic double tunnel junctions Peer-reviewed

    M. Amano, Y. Saito, K. Nakajima, T. Takahashi, K. Inomata

    J. Magn. Soc. Jpn.　25　(4)　775-778　2001

    Publisher: The Magnetics Society of Japan

    DOI： 10.3379/jmsjmag.25.775 　

    ISSN： 0285-0192

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    Exchange-biased dual spin-valve type magnetic double tunnel junctions (DSV-MTJs) of Ir-Mn/Co-Fe/AlOx/Co-Fe/AlOx/Co-Fe/Ir-Mn were annealed at 175-400°C. After annealing at 325°C, the magnetoresistance (MR) ratio and bias voltage Vh, at which the MR ratio is reduced by 50%, in the DSV-MTJs were greatly increased to 42% and 930 mV, respectively. After annealing above 325°C, the MR ratio and Vh decreased. This degradation of DSV-MTJs annealed above 325°C was investigated using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The XPS spectra and TEM images showed that an AlOx/MnOx composite tunnel barrier was formed due to the diffusion of Mn through the Co-Fe layer and oxygen redistribution above 300°C. Taking into account the spin-independent two-step tunneling via defect states in the barrier, we considered that this AlOx/MnOx composite barrier leads to decreasing the MR ratio and Vh and increasing the tunnel resistance.

  128. Magnetoresistance oscillations in double ferromagnetic tunnel junctions with layered ferromagnetic nanoparticles Peer-reviewed

    K Nakajima, Y Saito, S Nakamura, K Inomata

    IEEE TRANSACTIONS ON MAGNETICS　36　(5)　2806-2808　2000/09

    DOI： 10.1109/20.908595 　

    ISSN： 0018-9464

  129. Correlation between barrier width, barrier height, and DC bias voltage dependences on the magnetoresistance ratio in Ir-Mn exchange biased single and double tunnel junctions Peer-reviewed

    Y. Saito, M. Amano, K. Nakajima, S. Takahashi, M. Sagoi, K. Inomata

    Jpn. J. Appl. Phys.　39　(10)　L1035-L1038　2000/08/30

    Publisher: The Japan Society of Applied Physics

    DOI： 10.1143/JJAP.39.L1035 　

    ISSN： 0021-4922

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    Dual spin-valve-type double tunnel junctions (DTJs) of Ir–Mn/CoFe/AlOx/Co90Fe10/AlOx/CoFe/Ir–Mn and spin-valve-type single tunnel junctions (STJs) of Ir–Mn/CoFe/AlOx/CoFe/Ni–Fe were fabricated using an ultrahigh vacuum sputtering system, conventional photolithography and ion-beam milling. The STJs could be fabricated with various barrier heights by changing the oxidization conditions during deposition and changing the annealing temperature after deposition, while the AlOx layer thickness remained unchanged. There was a correlation between barrier width, height estimated using Simmons' expressions, and dc bias voltage dependence on the MR ratio. The $V_{\text{B } }$ dependence on the tunneling magnetoresistance (TMR) ratio was mainly related to the barrier width, and the decrease in the TMR ratio with increasing bias voltage is well explained, taking into account the spin-independent two-step tunneling via defect states in the barrier, as a main mechanism, at room temperature. Under optimized oxidization and annealing conditions, the maximum TMR ratio at a low bias voltage, and the dc bias voltage value at which the TMR ratio decreases in value by half ($V_{1/2}$) were 42.4% and 952 mV in DTJs, and 49.0% and 425 mV in STJs, respectively.

  130. Double tunnel junctions for magnetic random access memory devices Peer-reviewed

    K. Inomata, Y. Saito, K. Nakajima, M. Sagoi

    J. Appl. Phys.　87　6064-6066　2000/04

    DOI： 10.1063/1.372613 　

  131. Magnetoresistance oscillations in double ferromagnetic tunnel junctions with layered ferromagnetic Peer-reviewed

    K. Nakajima, Y. Saito, S. Nakamura, K. Inomata

    (2000) Digests of the Intermag Conference　GB-03　2000/04

  132. Tunnel magnetoresistance in double junctions with layered ferromagnetic nanoparticles Peer-reviewed

    K. Nakajima, Y. Saito, S. Nakamura, K. Inomata

    J. Magn. Soc. Jpn.　24　(4)　575-578　2000

    Publisher: The Magnetics Society of Japan

    DOI： 10.3379/jmsjmag.24.575 　

    ISSN： 0285-0192

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    Tunnel magnetoresistance (TMR) in double tunnel junctions with layered ferromagnetic nanoparticles was investigated. The sample comprised two ferromagnetic electrodes (CoFe/Fe) separated by an Al2O3 insulating layer in which a layer of Co80Pt20 nanoparticles was embedded. The nanoparticles were ellipsoidal with an average diameter of 3.7 nm, and composed a well-defined layer. The TMR and the tunnel resistance of the sample showed steep increases around 100 K, and weak temperature dependence below 50 K. The zero-bias TMR rose from 1 % at room temperature to 18 % at 20 K. Below 20 K, we observed magnetoresistance oscillation with respect to the bias voltage. The observed TMR oscillations, with periods of 1.6 and 15 mV, accompanied oscillations of the conductance. We consider that the conductance oscillations may originate from the coexistence of the discrete energy level of the nanoparticles and the discrete electrostatic potential due to the single-electron charging effect.

  133. Ir-Mn Exchange Biased Double Tunnel Junctions Invited Peer-reviewed

    Y. Saito

    Advanced Heterostructure workshop (AHW), 2000　2000

  134. Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer Peer-reviewed

    Y Saito, K Nakajima, K Tanaka, K Inomata

    IEEE TRANSACTIONS ON MAGNETICS　35　(5)　2904-2906　1999/09

    DOI： 10.1109/20.801020 　

    ISSN： 0018-9464

  135. Tunnel magnetoresistance between ferromagnetic electrodes and hard magnetic nano particles Peer-reviewed

    K Inomata, Y Saito

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　198-99　18-20　1999/06

    DOI： 10.1016/S0304-8853(98)00596-4 　

    ISSN： 0304-8853

  136. Spin-dependent tunneling in double tunnel junctions Peer-reviewed

    Y. Saito, K. Nakajima, K. Inomata

    (1999) Digests of the Intermag Conference　EC-11　1999/04

  137. Spin-Dependent Tunneling through Layered Hard-Magnetic NanoParticles Peer-reviewed

    Y. Saito, K. Inomata

    J. Magn. Soc. Jpn.　23　(4)　1269-1272　1999

    Publisher: The Magnetics Society of Japan

    DOI： 10.3379/jmsjmag.23.1269 　

    ISSN： 0285-0192

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    Spin-dependent tunneling was investigated in double tunnel junctions through layered Co80Pt20 hard-magnetic nano-particles with double Al2OX barriers prepared by direct sputtering using an Al2O3 target. The junction magnetoresistances were 15.6% and 20.5% with low resistance in a low field at room temperature, when Co-based alloy electrodes (Co80Pt20 bottom and Co9Fe top electrodes) and Co1Fe1 top and bottom electrodes were used, respectively. It was revealed that the bias and temperature dependencies of the tunneling magnetoresistance are weak for the present junction structure. This indicates that the bias and temperature dependencies of the resistance and resistance change between antiparallel and parallel alignments between electrodes and nano-particles are not mainly attributable to magnon excitations. The main contributions to the temperature and bias dependencies are shown to be the particle size effect and the broadening effect of Fermi distributions of electrons in the ferromagnetic electrodes and the layered Co80Pt20 hard magnetic nano-particles, due to the low barrier height.

  138. Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer Peer-reviewed

    Y. Saito, K. Nakajima, K. Tanaka, K. Inomata

    IEEE Transactions on Magnetics　35　(5)　2904-2906　1999

    DOI： 10.1109/20.801020 　

    ISSN： 0018-9464

  139. Spin-dependent tunneling through layered ferromagnetic nanoparticles Peer-reviewed

    K. Inomata, Y. Saito

    Appl. Phys. Lett.　73　(8)　1143-1145　1998/06/26

    DOI： 10.1063/1.122110 　

  140. Biquadratic coupling contributions to the magnetoresistive curves in Fe/FeSi/Fe sandwiches with semiconductor like FeSi and metallic bcc FeSi spacers Peer-reviewed

    Y Saito, K Inomata

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　67　(4)　1138-1141　1998/04

    DOI： 10.1143/JPSJ.67.1138 　

    ISSN： 0031-9015

  141. Interlayer coupling in Co/Si multilayers Peer-reviewed

    K. Inomata, Y. Saito

    Magnetism and Magnetic Materials Conference (1997MMM Conference)　1997/11

  142. Spin-dependent tunneling between a soft ferromagnetic layer and hard magnetic nanosize particles Peer-reviewed

    K Inomata, H Ogiwara, Y Saito, K Yusu, K Ichihara

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　36　(10B)　L1380-L1383　1997/10

    DOI： 10.1143/jjap.36.L1380 　

    ISSN： 0021-4922

  143. Interlayer coupling in Co/Si multilayers Peer-reviewed

    Yoshiaki Saito

    J. Appl. Phys.　81　5344　1997/06

    DOI： 10.1063/1.364540 　

  144. Interlayer Coupling and Quantum Size Effects in Superlattices

    Inomata Koichiro, Okuno Shiho, Saito Yoshiaki

    Bulletin of the Japan Institute of Metals　36　(2)　152-158　1997

    Publisher: The Japan Institute of Metals and Materials

    DOI： 10.2320/materia.36.152 　

    ISSN： 1340-2625

  145. Transition from antiferromagnetic coupling to biquadratic coupling in Fe/FeSi multilayers Peer-reviewed

    Y. Saito, K. Inomata, K. Yusu

    Jpn. J. Appl. Phys.　35　(1)　L100-L103　1996/12/11

    Publisher: The Japan Society of Applied Physics

    DOI： 10.1143/jjap.35.L100 　

    ISSN： 0021-4922

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    The detailed temperature dependence of interlayer exchange coupling in Fe/FeSi multilayers prepared by ion beam sputtering was investigated and compared with the data for Fe/Si multilayers. Significant differences between interlayer exchange coupling in Fe/FeSi and Fe/Si multilayers were observed. The coupling between Fe layers in Fe/FeSi multilayers showed a transition from antiferromagnetic to 90° coupling with decreasing temperature. This was due to the strong temperature dependence of J2 (biquadratic coupling), which outweighs that of J1 (collinear coupling) at low temperatures.

  146. Oscillations of Hall resistivity and thermoelectric power in Co(Fe)/Cu multilayers Peer-reviewed

    H Sato, Y Kobayashi, Y Aoki, Y Saito, K Inomata

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　156　(1-3)　247-249　1996/04

    DOI： 10.1016/0304-8853(95)00855-1 　

    ISSN： 0304-8853

  147. Oscillatory interlayer couplings as functions of a ferromagnetic metal layer and a semiconducting spacer in magnetic superlattices Peer-reviewed

    K Inomata, SN Okuno, Y Saito, K Yusu

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　156　(1-3)　219-223　1996/04

    DOI： 10.1016/0304-8853(95)00846-2 　

    ISSN： 0304-8853

  148. Oscillatory interlayer couplings as functions of a ferromagnetic metal layer and a semiconducting spacer in magnetic superlattices Invited Peer-reviewed

    K Inomata, SN Okuno, Y Saito, K Yusu

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　156　(1-3)　219-223　1996/04

    ISSN： 0304-8853

  149. Oscillations of Hall resistivity and thermoelectric power in Co(Fe)/Cu multilayers Peer-reviewed

    H Sato, Y Kobayashi, Y Aoki, Y Saito, K Inomata

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　156　(1-3)　247-249　1996/04

    ISSN： 0304-8853

  150. Die modulierte Struktur von Cu<inf>x</inf>V<inf>4</inf>O<inf>11</inf>(x = 2,12)

    Kato, K., Kosuda, K., Saito, Y., Nagasawa, H.

    Zeitschrift fur Kristallographie - New Crystal Structures　211　(8)　1996

    DOI： 10.1524/zkri.1996.211.8.522 　

  151. The modulated structure of CUxV6O11 (x=2,12) Peer-reviewed

    K Kato, K Kosuda, Y Saito, H Nagasawa

    ZEITSCHRIFT FUR KRISTALLOGRAPHIE　211　(8)　522-527　1996

    ISSN： 0044-2968

  152. MAGNETORESISTANCE IN FE-SI FILMS GROWN BY MOLECULAR-BEAM EPITAXY Peer-reviewed

    RJ HIGHMORE, K YUSU, SN OKUNO, Y SAITO, K INOMATA

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　151　(1-2)　95-101　1995/11

    DOI： 10.1016/0304-8853(95)00398-3 　

    ISSN： 0304-8853

  153. GIANT MAGNETORESISTANCE AND MAGNETIC-ANISOTROPY OF CO9FE/CU/CO9FE MULTILAYER THIN-FILMS ON AN MGO(110) SUBSTRATE Peer-reviewed

    K INOMATA, Y SAITO

    ELECTRICAL ENGINEERING IN JAPAN　115　(6)　1-7　1995/10

    DOI： 10.1002/eej.4391150601 　

    ISSN： 0424-7760

  154. OSCILLATIONS IN THE HALL RESISTIVITY IN CO(FE)/CU MULTILAYERS Peer-reviewed

    H SATO, Y KOBAYASHI, Y AOKI, Y SAITO, K INOMATA

    PHYSICAL REVIEW B　52　(14)　R9823-R9826　1995/10

    DOI： 10.1103/PhysRevB.52.R9823 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  155. CORRELATION BETWEEN THE INTERFACE STRUCTURE AND MAGNETIC AND TRANSPORT-PROPERTIES FOR CO/CU(110) AND NI8FE2/CU/CO/CU(110) SUPERLATTICES Peer-reviewed

    Y SAITO, K INOMATA, K YUSU, A GOTO, H YASUOKA

    PHYSICAL REVIEW B　52　(9)　6500-6512　1995/09

    DOI： 10.1103/PhysRevB.52.6500 　

    ISSN： 0163-1829

  156. INTERLAYER COUPLING AND MAGNETORESISTANCE IN FE-SI MULTILAYERS WITH SEMICONDUCTING SPACERS Peer-reviewed

    K INOMATA, K YUSU, Y SAITO

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　31　(1-2)　41-47　1995/04

    DOI： 10.1016/0921-5107(94)08015-1 　

    ISSN： 0921-5107

  157. MAGNETORESISTANCE ASSOCIATED WITH ANTIFERROMAGNETIC INTERLAYER COUPLING SPACED BY A SEMICONDUCTOR IN FE/SI MULTILAYERS Peer-reviewed

    K INOMATA, K YUSU, Y SAITO

    PHYSICAL REVIEW LETTERS　74　(10)　1863-1866　1995/03

    DOI： 10.1103/PhysRevLett.74.1863 　

    ISSN： 0031-9007

  158. MAGNON-EXCITATION CONTRIBUTION TO THE INTERFACE MAGNETIZATION IN CO/CU SUPERLATTICES Peer-reviewed

    Y SAITO, K INOMATA, A GOTO, H YASUOKA, S UJI, T TERASHIMA, H AOKI

    PHYSICAL REVIEW B　51　(6)　3930-3932　1995/02

    DOI： 10.1103/PhysRevB.51.3930 　

    ISSN： 0163-1829

  159. Giant magnetoresistance and interface structure in metallic multilayers Peer-reviewed

    Yoshiaki Saito

    IEEJ Trans. on Fundamentals and Materials　115-A　930-935　1995

    DOI： 10.1541/ieejfms1990.115.10_930 　

  160. Structure and Interlayer Magnetic Coupling in Fe/Si Multilayers Peer-reviewed

    Yoshiaki Saito

    J. Magn. Soc. Jpn　19　373-376　1995

    DOI： 10.3379/jmsjmag.19.373 　

  161. Interface structure and magnetic and transport properties for co/cu(Lll) multilayers Peer-reviewed

    Yoshiaki Saito, Koichiro Inomata, Masahiko Nawate, Shigeo Honda, Atsushi Goto, Hiroshi Yasuoka

    Japanese Journal of Applied Physics　34　(6R)　3088-3092　1995

    DOI： 10.1143/JJAP.34.3088 　

    ISSN： 1347-4065 0021-4922

  162. Correlation between the interface structure and magnetic and transport properties for Co/Cu(110) and Ni8Fe2/Cu/Co/Cu(110) superlattices Peer-reviewed

    Yoshiaki Saito, Koichiro Inomata, Keiichiro Yusu, Atsushi Goto, Hiroshi Yasuoka

    Physical Review B　52　(9)　6500-6512　1995

    DOI： 10.1103/PhysRevB.52.6500 　

    ISSN： 0163-1829

  163. TWO DIFFERENT TYPES OF ANTIFERROMAGNETIC COUPLINGS AND MAGNETORESISTANCES IN FE/SI MULTILAYERS Peer-reviewed

    K INOMATA, K YUSU, Y SAITO

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　33　(12A)　L1670-L1672　1994/12

    DOI： 10.1143/JJAP.33.L1670 　

    ISSN： 0021-4922

  164. GIANT MAGNETORESISTANCE EFFECT AND MAGNETIC-ANISOTROPY IN CO9FE/CU/CO9FE TRILAYERS ON MGO(110) SUBSTRATES Invited Peer-reviewed

    K INOMATA, Y SAITO, RJ HIGHMORE

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　137　(3)　257-263　1994/11

    ISSN： 0304-8853

  165. GIANT MAGNETORESISTANCE EFFECT AND MAGNETIC-ANISOTROPY IN CO9FE/CU/CO9FE TRILAYERS ON MGO(110) SUBSTRATES Peer-reviewed

    K INOMATA, Y SAITO, RJ HIGHMORE

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　137　(3)　257-263　1994/11

    DOI： 10.1016/0304-8853(94)90710-2 　

    ISSN： 0304-8853

  166. Giant magnetoresistance and magnetic anisotropy in Co9Fe/Cu/Co9Fe sandwiches on a MgO (110) substrate Peer-reviewed

    Yoshiaki Saito

    IEEJ Trans. on Fundamentals and Materials　114-A　756　1994/05

  167. TEMPERATURE-DEPENDENCE OF GIANT MAGNETORESISTANCE IN CO/CU SUPERLATTICES Peer-reviewed

    Y SAITO, K INOMATA, S UJI, T TERASHIMA, H AOKI

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　63　(4)　1263-1267　1994/04

    DOI： 10.1143/JPSJ.63.1263 　

    ISSN： 0031-9015

  168. DOMAIN PROCESSES IN ANTIFERROMAGNETICALLY-COUPLED CO9FE/CU/CO9FE THIN-FILM SANDWICHES Peer-reviewed

    RJ HIGHMORE, K YUSU, Y SAITO, SN OKUNO, K INOMATA

    ADVANCED MATERIALS '93, II - A & B　15　(A & B)　1105-1108　1994

  169. Magnetoresistance in Fe-Si films grown by molecular beam epitaxy Peer-reviewed

    R. J. Highmore, K. Yusu, S. N. Okuno, Y. Saito, K. Inomata

    Magnetic metallic multilayers conference 1994 (MML 1994)　1994

  170. Thermoelectric Power of Co/Cu Multilayer Peer-reviewed

    Katsuhiko Nishimura, Junji Sakurai, Katsuhiro Hasegawa, Yoshiaki Saito, Kouichiro Inomata, Teruya Shinjo

    Journal of the Physical Society of Japan　63　(7)　2685-2690　1994

    DOI： 10.1143/JPSJ.63.2685 　

    ISSN： 1347-4073 0031-9015

  171. GIANT MAGNETORESISTANCE AND LOW SATURATION FIELDS IN CO-FE/CU MULTILAYERS Invited Peer-reviewed

    K INOMATA, Y SAITO

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　126　(1-3)　425-429　1993/09

    ISSN： 0304-8853

  172. GIANT MAGNETORESISTANCE AND LOW SATURATION FIELDS IN CO-FE/CU MULTILAYERS Peer-reviewed

    K INOMATA, Y SAITO

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　126　(1-3)　425-429　1993/09

    DOI： 10.1016/0304-8853(93)90645-I 　

    ISSN： 0304-8853

  173. CORRELATION BETWEEN THE MAGNETORESISTANCE RATIO AND THE INTERFACE STRUCTURE INVESTIGATED BY CO-59 NMR Peer-reviewed

    Y SAITO, K INOMATA, A GOTO, H YASUOKA

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　126　(1-3)　466-469　1993/09

    DOI： 10.1016/0304-8853(93)90658-O 　

    ISSN： 0304-8853

  174. CORRELATION BETWEEN THE MAGNETORESISTANCE RATIO AND THE INTERFACE STRUCTURE, AND LOCAL STRAIN OF CO/CU SUPERLATTICES INVESTIGATED BY CO-59 NMR Peer-reviewed

    Y SAITO, K INOMATA, A GOTO, H YASUOKA

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　62　(5)　1450-1454　1993/05

    DOI： 10.1143/JPSJ.62.1450 　

    ISSN： 0031-9015

  175. CORRELATION BETWEEN THE MAGNETORESISTANCE RATIO AND THE INTERFACE STRUCTURE, AND LOCAL STRAIN OF CO/CU SUPERLATTICES INVESTIGATED BY CO-59 NMR Peer-reviewed

    Y SAITO, K INOMATA, A GOTO, H YASUOKA

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　62　(5)　1450-1454　1993/05

    ISSN： 0031-9015

  176. Giant magnetoresistance with low saturation fields in Co-Fe/Cu and Ni80Fe20/Cu multilayers induced by optimized Ar acceleration voltage in ion beam sputtering Peer-reviewed

    K. Inomata, Y. Saito, S. Hashimoto

    Journal of Magnetism and Magnetic Materials　121　(1-3)　344-349　1993/03/02

    DOI： 10.1016/0304-8853(93)91219-W 　

    ISSN： 0304-8853

  177. GIANT MAGNETORESISTANCE WITH LOW SATURATION FIELDS IN CO-FE/CU AND NI80FE20/CU MULTILAYERS INDUCED BY OPTIMIZED AR ACCELERATION VOLTAGE IN ION-BEAM SPUTTERING Peer-reviewed

    K INOMATA, Y SAITO, S HASHIMOTO

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　121　(1-3)　350-356　1993/03

    ISSN： 0304-8853

  178. CHARGE-TRANSFER PHASE-TRANSITION IN CUXV4O11 Peer-reviewed

    Y SAITO, M ONODA, H NAGASAWA

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　61　(11)　3865-3868　1992/11

    DOI： 10.1143/JPSJ.61.3865 　

    ISSN： 0031-9015

  179. GIANT MAGNETORESISTANCE IN CO/CU, CO9FE/CU, AND CO7.5FE2.5/CU MULTILAYERS Peer-reviewed

    Y SAITO, S HASHIMOTO, K INOMATA

    IEEE TRANSACTIONS ON MAGNETICS　28　(5)　2751-2753　1992/09

    DOI： 10.1109/20.179617 　

    ISSN： 0018-9464

  180. Giant magnetoresistance dependence on Ar acceleration voltage in Co <inf>9</inf>Fe/Cu and Co<inf>3</inf>Fe/Cu multilayers Peer-reviewed

    Saito, Y., Hashimoto, S., Inomata, K.

    Applied Physics Letters　60　(19)　2436-2438　1992/02

    DOI： 10.1063/1.106997 　

  181. NQR and NMR studies on Pb<inf>2</inf>Sr<inf>2</inf>Y<inf>0.5</inf>Ca<inf>0.5</inf>Cu<inf>3</inf>O<inf>8+y</inf>

    Kohara, T., Ueda, K., Kohori, Y., Noji, T., Koike, Y., Saito, Y.

    Journal of Magnetism and Magnetic Materials　104-107　(PART 1)　1992

    DOI： 10.1016/0304-8853(92)90908-7 　

  182. Giant Magnetoresistance in (CoxFe1-x/Cu)n Multilayers Peer-reviewed

    Yoshiaki Saito

    J. Magn. Soc. Jpn　16　313-318　1992

    DOI： 10.3379/jmsjmag.16.313 　

  183. Saturation fields in Co-Fe/Cu multilayers with giant magnetoresistance: In-plane uniaxial magnetic anisotropy effects Peer-reviewed

    K. Inomata, Y. Saito

    Applied Physics Letters　61　(6)　726-728　1992

    DOI： 10.1063/1.107780 　

    ISSN： 0003-6951

  184. Giant magnetoresistance in CO/CU, CO9FE/CU, and CO7.5FE2.5/CU multilayers Peer-reviewed

    Y. Saito, S. Hashimoto, K. Inomata

    IEEE Transactions on Magnetics　28　(5)　2751-2753　1992

    DOI： 10.1109/20.179617 　

    ISSN： 1941-0069 0018-9464

  185. MAGNETIC AND MAGNETOTRANSPORT PROPERTIES OF COXFE1-X/CU MULTILAYERS Peer-reviewed

    Y SAITO, K INOMATA

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　30　(10A)　L1733-L1736　1991/10

    DOI： 10.1143/JJAP.30.L1733 　

    ISSN： 0021-4922

  186. Sensitive detection of phase transitions by microwave cavity perturbation method: Application to high-Tc superconductor Bi-Sr-Ca-Cu-O system Peer-reviewed

    Yoshiaki Saito

    Physica C: Superconductivity　161　(5-6)　683　1989/09

    DOI： 10.1016/0921-4534(89)90405-X 　

  187. Arsenic-rich melt effect on threshold voltage scattering for Si-implanted GaAs metal-semiconductor field-effect transistor

    Saito, Y.

    Journal of Applied Physics　65　(2)　1989

    DOI： 10.1063/1.343076 　

    ISSN： 0021-8979

  188. Superconducting and magnetic properties of Bi<inf>2</inf>Sr<inf>2</inf>Ca<inf>1-x</inf>Y<inf>x</inf>Cu<inf>2</inf>O<inf>y</inf> (0≦x≦1)

    Yoshizaki, R., Saito, Y., Abe, Y., Ikeda, H.

    Physica C: Superconductivity and its applications　152　(5)　1988

    DOI： 10.1016/0921-4534(88)90045-7 　

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Misc. 49

  1. Voltage-Control Spintronics Memory (VoCSM)

    117　(118)　37-40　2017/07/07

    Publisher: 電子情報通信学会

    ISSN： 0913-5685

  2. Voltage-Control Spintronics Memory (VoCSM)

    41　(21)　37-40　2017/07

    Publisher: 映像情報メディア学会

    ISSN： 1342-6893

  3. Voltage-Control Spintronics Memory (VoCSM) Having Potentials of Ultra-Low Energy-Consumption and High-Density

    117　(9)　1-4　2017/04/20

    Publisher: 電子情報通信学会

    ISSN： 0913-5685

  4. Voltage-Control Spintronics Memory (VoCSM) Having Potentials of Ultra-Low Energy-Consumption and High-Density

    116　(448)　25-28　2017/01/30

    Publisher: 電子情報通信学会

    ISSN： 0913-5685

  5. Si〈100〉スピン伝導素子のスピン信号強度増大

    石川瑞恵, 石川瑞恵, 塚原誠人, 藤田裕一, 山田晋也, 杉山英行, 斉藤好昭, 浜屋宏平

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　78th　2017

    ISSN： 2436-7613

  6. Si系横型素子における室温スピン信号の増大

    岡孝保, 石川瑞恵, 藤田裕一, 山田晋也, 金島岳, 斉藤好昭, 浜屋宏平

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　63rd　2016

    ISSN： 2436-7613

  7. International Technology Roadmap for Semiconductors (ITRS) 2015 roadmap

    Yoshiaki Saito

    2015

  8. International Technology Roadmap for Semiconductors (ITRS) 2013 roadmap

    Yoshiaki Saito

    International Technology Roadmap for Semiconductors　2013

  9. Spin-MOSFET Technologies for Realization of Advanced Memories and Logic ICs

    井口 智明, 棚本 哲史, 斉藤 好昭

    東芝レビュー　66　(11)　40-43　2011/11

    Publisher: 東芝技術企画室

    ISSN： 0372-0462

  10. Current Status of Spin-based MOSFET and Its Future

    SAITO Y.

    Magnetics Japan　6　(1)　16-22　2011/02/01

    Publisher: 日本磁気学会

    ISSN： 1880-7208

  11. Application of Spin MOSFET to Nonvolatile and Reconfigurable LSIs

    INOKUCHI Tomoaki, MARUKAME Takao, TANAMOTO Tetsufumi, SUGIYAMA Hideyuki, ISHIKAWA Mizue, SAITO Yoshiaki

    IEICE technical report　110　(183)　125-129　2010/08/19

    Publisher: The Institute of Electronics, Information and Communication Engineers

    ISSN： 0913-5685

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    We developed a novel spintronic device &quot;Spin-transfer-Torque Switching-MOSFET (STS-MOSFET)&quot; and demonstrated its reconfigurable characteristics for nonvolatile LSIs. The device showed clear magnetocurrent (MC) and write characteristics with the endurance of over 10^5 cycles. Optimum connection configuration was revailed in order to enhance the read and write characteristics (i.e., MC ratio and write voltage) of the STS-MOSFETs. Large scale circuit simulations for various FPGA circuits revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.

  12. Preparation of the self-differential elements and those detection

    SUGIYAMA Hideyuki, SAITO Yoshiaki, INOMATA Koichiro

    28　220-220　2004/09/21

  13. Development and Issues of MRAM, as a High Performance RAM

    YODA Hiroaki, ASAO Yoshiaki, SAITO Yoshiaki, UEDA Tomomasa, KIKUTA Kuniko, KISHI Tatsuya, IKEGAWA Sumio, ISHIWATA Nobuyuki, TSUCHIDA Kenji, TAHARA Shuichi

    Technical report of IEICE. ICD　103　(2)　11-15　2003/04/03

    Publisher: The Institute of Electronics, Information and Communication Engineers

    ISSN： 0913-5685

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    Issues of MRAM to be a versatile memory were identified and technology candidates to overcome the issues were reviewed. Further, yoke wire technology, which was thought to overcome the biggest issue, large write current,, was developed, successfully implemented in 1kbit-MRAM, and proved its effectiveness.

  14. Magnetic random access memory : a current status and advanced future technology

    SAITO Y., AMANO M., KISHI T., UEDA T., ASAO Y., TSUCHIDA K., YODA H.

    128　85-92　2003/01/30

    ISSN： 1340-7562

  15. The Future of High Density MRAMs

    ASAO Yoshiaki, TSUCHIDA Kenji, SAITO Yoshiaki, IKEGAWA Sumio, YODA Hiroaki

    26　165-166　2002/09/01

    ISSN： 1340-8100

  16. Deep sub-μm ferromagnetic double tunnel junction devices

    TAKAHASHI S., NAKAJIMA K., AMANO M., KISHI T., SAITO Y.

    25　326-326　2001/09/01

    ISSN： 1340-8100

  17. Technology status and potential of ferromagnetic double tunnel junctions for MRAM

    SAITO Y., NAKAJIMA K., AMANO M., TAKAHASHI S., KISHI T., SAGOI M.

    119　33-40　2001/03/06

    ISSN： 1340-7562

  18. Spin-dependent tunneling in ferromagnetic double tunnel junctions with layered nanoparticles

    NAKAJIMA K., SAITO Y., INOMATA K.

    24　174a-174b　2000/09/01

    ISSN： 1340-8100

  19. Switching characteristic of ferromagnetic intermediate layers in double tunnel junctions

    NAKAJIMA K., SAGOI M., AMANO M., TAKAHASHI S., SAITO Y.

    24　27-27　2000/09/01

    ISSN： 1340-8100

  20. Low resistive ferromagnetic double tunnel junctions for MRAM

    SAITO Y., AMANO M., NAKAJIMA K., TAKAHASHI S., SAGOI M.

    24　28-28　2000/09/01

    ISSN： 1340-8100

  21. The characteristics of the annealed dual spin-valve type ferromagnetic double tunnel junctions

    AMANO M., SAITO Y., NAKAJIMA K., TAKAHASHI S.

    24　50-50　2000/09/01

    ISSN： 1340-8100

  22. TMRのMRAM応用研究の現状と課題

    猪俣 浩一郎, 斎藤 好昭, 中島 健太郎, 砂井 正之

    日本応用磁気学会研究会資料　112　35-42　1999/11/26

    ISSN： 1340-7562

  23. TMR in ferromagnetic single and double tunnel junctions

    SAITO Y., NAKAJIMA K., INOMATA K.

    23　428-428　1999/10/01

  24. TMR in double tunnel junctions with layered ferromagnetic nano-paricles

    NAKAJIMA K., SAITO Y., NAKAMURA S., INOMATA K.

    23　282-282　1999/10/01

  25. 28p-J-14 Magnetoresistance in Ferromagnetic Double Tunnel Junctions

    Saito Y., Nakajima K., Inomata K.

    Meeting abstracts of the Physical Society of Japan　54　(1)　413-413　1999/03/15

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  26. 強磁性ナノ粒子層を介した二重トンネル接合の磁気抵抗 (特集:ナノ領域の先端研究--21世紀のキー技術を求めて)

    斉藤 好昭, 猪俣 浩一郎, 中村 新一

    東芝レビュー　54　(2)　9-12　1999/02

    Publisher: 東芝技術企画室

    ISSN： 0372-0462

  27. Spin-dependent tunneling through layered ferromagnetic nano particles

    SAITO Y., INOMATA K.

    22　57-57　1998/09/01

  28. Magnetoresistance in Hybrid Type Tunnel Junctions

    1998　(69)　23-26　1998/07/17

  29. Spin-dependent tunneling between ferromagnetic metals and a ferromagnetic electrode

    INOMATA K., OGIWARA H., SAITO Y., YUSU K., ICHIHARA K.

    21　179-179　1997/10/01

  30. 7a-YG-17 Transport Properties for Fe/FeSi/Fe Sandwiches with a semiconducting ε-FeSi spacer

    Saito Y., Inomata K.

    Meeting abstracts of the Physical Society of Japan　52　(2)　523-523　1997/09/16

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  31. Giant Magnetoresistance in Ferromagnetic Tunnel Junctions

    INOMATA Koichiro, SAITO Yoshiaki

    1997　(93)　43-45　1997/07/04

  32. 29a-WB-3 Magnetic and Electronic Properties for Fe/FeSi/Fe Sandwiches with the bcc-FeSi and B20-FeSi

    Saito Y., Inomata K.

    Meeting abstracts of the Physical Society of Japan　52　(1)　478-478　1997/03/17

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  33. Interlayer Coupling in Metal/Semiconductor Multilayers

    INOMATA Koichiro, SAITO Yoshiaki

    1996　(65)　11-17　1996/06/07

  34. Magnetic and transport properties for Fe/FeSi multilayers.

    Saito Y., Inomata K.

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting　1995　(3)　119-119　1995/09/12

    Publisher: The Physical Society of Japan (JPS)

  35. Temperature dependences of the interlayer coupling and the resistivity in Fe-Si multilayers

    INOMATA K., SAITO Y.

    19　109-109　1995/09/01

  36. Annealing temperature dependence of the interface structure and MR ratio for Co/Cu superlattices

    Saito Y., Inomata K., Goto A., Yasuoka H., Nawate M., Honda S.

    Abstracts of the meeting of the Physical Society of Japan. Annual meeting　50　(3)　49-49　1995/03/16

    Publisher: The Physical Society of Japan (JPS)

  37. Oscilation in Hall resistivity in Co(Fe)/Cu multilayers

    SATO H, KOBAYASHI Y, AOKI Y, SAITO Y, INOMATA K

    Phys. Rev.　52　(14)　R9823-R9826　1995

    DOI： 10.1103/PhysRevB.52.R9823 　

    ISSN： 0163-1829

  38. MgO(110)基板上Co9Fe/Cu/Co9Feサンドイッチ膜の巨大磁気抵抗効果と磁気異方性 (磁性薄膜の軟磁性・新機能<特集>)

    猪俣 浩一郎, 斉藤 好昭

    電気学会論文誌 A 基礎・材料・共通部門誌　114　(11)　p756-760　1994/10

    Publisher: 電気学会

    ISSN： 0385-4205

  39. 4a-YA-7 Correlation between MR ratio and interface structure for Co/Cu and NiFe/Cu/Co/Cu superlattices

    Saito Y, Inomata K, Goto A, Yasuoka H

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting　1994　(3)　131-131　1994/08/16

    Publisher: The Physical Society of Japan (JPS)

  40. 3p-YA-18 Temperature dependent interlayer exchange coupling in Fe/Si multilayers

    Inomata K, Yusu K, Saito Y

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting　1994　(3)　90-90　1994/08/16

    Publisher: The Physical Society of Japan (JPS)

  41. 29a-YQ-3 Temperature Dependence of the Giant Magnetoresistance in Co/Cu and Fe/Cr superlattices.

    Saito Y, Inomata K, U Shinya, Terashima T, Aoki H, Goto A, Yasuoka H

    Abstracts of the meeting of the Physical Society of Japan. Annual meeting　49　(3)　72-72　1994/03/16

    Publisher: The Physical Society of Japan (JPS)

  42. 13a-R-5 Temperature dependence of electric resistivity in magnetic multilayers Au/Co/Au/NiFe and Co/Cu.

    Hasegawa K., Nishimura K., Sakurai J., Saito Y., Inomata K., Shinjo T.

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting　1993　(3)　37-37　1993/09/20

    Publisher: The Physical Society of Japan (JPS)

  43. 1a-S-8 Temperature dependence of the giant magnetoresistance of Co/Cu and Co-Fe/Cu superlattices

    Saito Y., Inomata K., Uji S., Shimizu T., Aoki H.

    Abstracts of the meeting of the Physical Society of Japan. Annual meeting　48　(3)　144-144　1993/03/16

    Publisher: The Physical Society of Japan (JPS)

  44. Giant magnetoresistance with low saturation fields in Co-Fe/Cu and NiFe/Cu multilayers induced by optimized Ar acceleration voltages in ion beam sputtering

    INOMATA K, SAITO Y, HASHIMOTO S

    J.Magn.Magn.Mater.　121　(1/3)　350-356　1993

    DOI： 10.1016/0304-8853(93)91220-2 　

    ISSN： 0304-8853

  45. 25p-N-9 Period of oscillatory exchante coupling in Co/CuNi superlattices

    Okuno N.S, Inomata K, Takahashi Y, Saito Y

    1992　(3)　29-29　1992/09/14

    Publisher: The Physical Society of Japan (JPS)

  46. 25p-N-12 Correlation between MR ratio and interface structure investigated by ^<59>Co NMR

    Saito Y, Inomata K, Goto A, Yasuoka H

    1992　(3)　31-31　1992/09/14

    Publisher: The Physical Society of Japan (JPS)

  47. 30a-APS-31 Oscillatory Magnetoresistance as a function of ferromagnetic layer in Fe/Cr multilayers

    Okuno S.N., Saito Y., Inomata K.

    46　(3)　161-161　1991/09/12

    Publisher: The Physical Society of Japan (JPS)

  48. 29p-ZJ-8 Giant Magnetoresistance in (FeCo-Cu)n Multilayer

    Saito Y., Okuno S., Inomata K.

    46　(3)　98-98　1991/09/12

    Publisher: The Physical Society of Japan (JPS)

  49. 24p-W-13 Magnetic properties of Co/Mn multilayer films

    Saito Y., Yusu K., Inomata K.

    1991　(3)　34-34　1991/03/11

    Publisher: The Physical Society of Japan (JPS)

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Books and Other Publications 6

  1. Nanomagnetic Materials : Fabrication, Characterization and Application

    Yoshiaki Saito, Edi, Akinobu Yamaguchi, Atsufumi Hirohata, Bethanie Stadler

    Elsevier Science Ltd　2021/07

  2. Handbook of thin film fabrication and application, 2020 edition

    2020/02

  3. スピントロニクスの基礎と材料・応用技術の最前線 《普及版》

    斉藤好昭

    シーエムシー 出版、高梨 弘毅 教授編集　2015/08

  4. スピントロニクスの基礎と材料・応用技術の最前線

    斉藤好昭

    シーエムシー 出版、高梨 弘毅 教授編集　2009/06

  5. ２１世紀版、薄膜作製応用ハンドブック

    斉藤好昭

    株式会社 エヌ・ティー・エス, 権田俊一教授監修　2003/04

  6. MRAM技術～基礎からLSI応用まで～

    斉藤好昭

    サイペック(株)REALIZE事業部門, 猪俣浩一郎 教授監修　2002/02

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Research Projects 10

  1. Investigation of orbital symmetry effect in spin-orbit torque and development for energy-efficient and high-density spin memory devices

    Yoshiaki Saito

    Offer Organization: Japan Society for the Promotion of Sicence

    System: Scientific Research (S)

    Institution: Tohoku University

    2024/04 - 2029/03

  2. 反強磁性体材料を基軸とした超高密度不揮発メモリデバイスの開拓

    斉藤 好昭

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業 挑戦的研究(開拓)

    Category: 挑戦的研究(開拓)

    Institution: 東北大学

    2021/07 - 2026/03

    More details Close

    本研究の目的は、本質的に微細化限界が生じない『反強磁性体を用いた超高密度メモリデバイス』の動作原理を実証し、超大容量・超高速性・低消費電力性を有する次世代メモリデバイスを開拓することにある。 令和3年度は、現状保有している超高真空スパッタ装置の１源チャンバーに、ターゲット交換機構と基板加熱機構を付与し、真空を破ることなく4種類の反強磁性体を成膜できる研究環境を整えた。また、以下の知見を明らかにした。 （１）新規成膜機構を用いて、読み出し用の反強磁性体の検討を行った結果、反強磁性体IrMn(111)上にMgO/Ptがエピタキシャル成長することが確認された。MgOの配向面は(111)であることが分かった。 （２）書き込み用の反強磁性構造として、Pt/Ir/Pt(Phys. Rev. B 104, 064439 (2021))およびPt/Ru/Pt(Appl. Lett. 119, 142401-1/7 (2021))非磁性中間層を有する新規なSynthetic反強磁性構造を設計し提案した。また、実際に提案構造を作製して評価した結果、反強磁性構造が実現し、大きなスピンHall効果が得られることが明らかとなった。電流をスピン電流に変換する効率（スピンHall角）は、Pt単層膜の約２倍であることが分かった。Pt/Ir/Pt系の比抵抗は、Pt単層膜とほぼ同等であることから、Pt/Ir/Pt系Synthetic反強磁性電極のSOT書込み時の消費電力は、Pt単層膜の約１／２に低減可能である。また、本構造を用いて、異なる反強磁性状態間を安定的にSOTスピン反転可能であることを実証した(Phys. Rev. B 105, 054421 (2022))。

  3. 高効率スピン軌道トルク電圧制御デバイス創製を目指したナノ構造エンジニアリング Competitive

    SAITO Yoshiaki

    System: Grant-in-Aid for Scientific Research

    2019/04 - 2023/03

  4. 純スピン流伝導の光・電界制御 Competitive

    System: Grant-in-Aid for Scientific Research

    2016/04 - 2017/09

  5. ImPACT: 低RA・高スピン偏極ソース/ドレイン電極開発（スピンFETプロジェクト） Competitive

    2014/12 - 2017/03

  6. 半導体チャネルを介した磁気抵抗比の増大に関する研究 Competitive

    System: Grant-in-Aid for Scientific Research

    2014/04 - 2017/03

  7. 縦型ショットキートランジスタの創製 Competitive

    System: Grant-in-Aid for Scientific Research

    2013/04 - 2016/03

  8. ホイスラー合金ソース・ドレイン構造を用いたＳｉチャンネルを介した磁気抵抗効果 Competitive

    System: Grant-in-Aid for Scientific Research

    2010/04 - 2013/03

  9. NEDO: 高スピン偏極率材料を用いたスピンMOSFET の研究開発 Competitive

    System: New Energy Technology Research and Development

    2006/10 - 2009/09

  10. CREST-JST: スピン量子ドットメモリ創製のための要素技術開発 Competitive

    System: JST Basic Research Programs (Core Research for Evolutional Science and Technology :CREST)

    2001/04 - 2006/03

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