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Sakiko Kawanishi

Section

Institute of Multidisciplinary Research for Advanced Materials

Job title

Associate Professor

Degree

researchmap

https://researchmap.jp/sakiko_kawanishi

J-GLOBAL ID

201801007840925091

e-Rad No.

80726985

Research History 8

2023/03 - Present

Tohoku University　Institute of Multidisciplinary Research for Advanced Materials
2022/02 - Present

Tohoku University Prominent Research Fellow
2015/12 - 2023/02

Tohoku University　IMRAM
2019/05 - 2022/03

National Renewable Energy Laboratory　Visiting assistant professor
2015/04 - 2015/11

The University of Tokyo
2014/04 - 2015/03

The University of Tokyo
2013/10 - 2014/04

The University of Tokyo
2011/04 - 2013/09

The University of Tokyo

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Education 3

The University of Tokyo

2010/10 - 2013/09
Osaka University

2007/04 - 2009/03
Osaka University

2003/04 - 2006/03

Committee Memberships 7

日本学術振興会 R026先端計測技術の将来設計委員会　委員

2022/10 - Present
日本結晶成長学会　渉外・広報委員会

2022/04 - Present
日本学術振興会製鋼第19委員会　委員

2022/01 - Present
日本学術振興会 R032産業イノベーションのための結晶成長委員会　委員

2021/04 - Present
日本金属学会　会報編集委員

2021/04 - Present
日本金属学会　男女共同参画委員

2019/04 - Present
応用物理学会東北支部　企画運営委員・広報担当

2018/04 - Present

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Professional Memberships 5

JAPANESE ASSOCIATION FOR CRYSTAL GROWTH
JAPAN SOCIETY OF THERMOPHYSICAL PROPERTIES
THE JAPAN SOCIETY OF APPLIED PHYSICS
THE IRON AND STEEL INSTITUTE OF JAPAN
THE JAPAN INSTITUTE OF METALS AND MATERIALS

Research Areas 1

Nanotechnology/Materials / Metals and resources production /

Awards 11

第6回東北大学優秀女性研究者賞「紫千代萩賞」

2023/03　東北大学　化合物半導体材料の高温溶液成長の研究
JACG 18th Young Researcher Award

2020/11　The Japanese Association for Crystal Growth　In-situ observation of high-temperature SiC solution growth
原田研究奨励賞

2019/07　公益財団法人本多記念会　ワイドギャップ半導体結晶の溶液成長ダイナミクスに関する研究
第13回JOINT JIM/TMS Young Leaders International Scholar Awards

2019/03　日本金属学会
研究奨励賞

2019/03　日本鉄鋼協会　溶液成長法による新規材料開発
第66回論文賞

2018/09/19　日本金属学会　Thermodynamics and Kinetics of Direct Synthesis of Solar Grade Silicon from Metallurgical Silicon Wafer by Liquid Phase Migration in Solid Silicon
第12回多元物質科学研究奨励賞

2017/12/05　籏野奨学基金　シリコンカーバイドの溶液成長に関する研究
第27回日本金属学会奨励賞

2017/09/06　公益社団法人日本金属学会　溶液成長法による新規材料開発に関する研究
第34回（2013年春季）応用物理学会講演奨励賞

2013/03　応用物理学会　干渉縞を利用した溶融合金へのSiC溶解時の高温界面リアルタイム観察
優秀賞

2008/03　日本鉄鋼協会第155回春季講演大会ポスター発表　溶融Fe-Si-C合金を利用したSiCの低温結晶成長の試み
優秀発表賞

2007/12　日本鉄鋼協会関西支部第3回鉄鋼プロセス研究会ポスター発表　溶融Fe-Si-C合金を利用したSiCの低温結晶成長の試み

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Papers 45

High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics

Issei Suzuki, Zexin Lin, Taichi Nogami, Sakiko Kawanishi, Binxiang Huang, Andreas Klein, Takahisa Omata

APL Materials　11　(3)　031116-031116　2023/03/01
Publisher: AIP Publishing
DOI： 10.1063/5.0143617 　

eISSN： 2166-532X

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It has been recently reported that n-type single crystalline SnS exhibits a large band bending (∼1 eV) at the interface with MoO₃, which is a large work function material. In this study, we applied this interface to solar cells for the first time and evaluated its photovoltaic properties. The highest V_OC achieved was 437 mV. Although this value is the highest ever recorded for SnS solar cells, it was lower than the expected value of 700–800 mV. The highest power conversion efficiency ( PCE) was 4.4%. Based on an analysis of the device parameters, we propose methods for improving the device performance, including V_OC, the short-circuit current, and PCE. The carrier-collection length of the n-type SnS single crystals was estimated to be ∼200 nm based on the external quantum efficiency measurements. Therefore, this study demonstrates that the V_OC of SnS solar cells can be improved by fabricating a junction with MoO₃ thin films.
Experimental Identification of Atomic Orbital Contributions to SnS Valence Band using Polarization‐Dependent Angle‐Resolved Photoemission Spectroscopy Peer-reviewed

Issei Suzuki, Sakiko Kawanishi, Kiyohisa Tanaka, Takahisa Omata, Shin-ichiro Tanaka

physica status solidi (b)　2200408-2200408　2023/02/08
Publisher: Wiley
DOI： 10.1002/pssb.202200408 　

ISSN： 0370-1972

eISSN： 1521-3951
Incorporation limit of MoO ₃ in sodium borosilicate glasses Peer-reviewed

Sohei Sukenaga, Hiroki Unozawa, Yuki Chiba, Masanori Tashiro, Sakiko Kawanishi, Hiroyuki Shibata

Journal of the American Ceramic Society　106　(1)　293-305　2023/01
Publisher: Wiley
DOI： 10.1111/jace.18760 　

ISSN： 0002-7820

eISSN： 1551-2916
Avoiding Fermi Level Pinning at the SnS Interface for High Open-Circuit Voltage Peer-reviewed

Issei Suzuki, Binxiang Huang, Sakiko Kawanishi, Takahisa Omata, Andreas Klein

The Journal of Physical Chemistry C　126　(48)　20570-20576　2022/12/08
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.jpcc.2c04212 　

ISSN： 1932-7447

eISSN： 1932-7455
Current status of n-type SnS: paving the way for SnS homojunction solar cells Peer-reviewed

Issei Suzuki, Sakiko Kawanishi, Takahisa Omata, Hiroshi Yanagi

Journal of Physics: Energy　4　(4)　042002-042002　2022/10/01
Publisher: IOP Publishing
DOI： 10.1088/2515-7655/ac86a1 　

eISSN： 2515-7655

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Abstract Orthorhombic SnS is a promising thin-film solar-cell material composed of safe and abundant elements with suitable optical properties for photovoltaic application. For approximately two decades, SnS solar cells have employed heterojunction structures with p-type SnS and other n-type semiconductors because undoped SnS typically exhibits p-type electrical conduction. However, their conversion efficiency has remained stagnant at 4%–5% for a long time. A breakthrough is required to significantly improve their conversion efficiencies before SnS solar cells can be put into practical use. Therefore, this comprehensive review article establishes the current state of the art in SnS solar cells, with an aim to accelerate both fundamental research and practical applications in this field. We discuss issues specific to SnS heterojunction solar cells, the advantages of the homojunction structure, and summarize recent advances in the n-type conversion of SnS by impurity doping, which is required to form a homojunction. The latter half of this article describes the latest research on the fabrication of n-type single crystals and films of halogen-doped n-type SnS, which is prepared via a doping system suitable for practical use. We conclude the article by summarizing the current status and future work on SnS homojunction devices, including the development of high-efficiency multi-junction SnS solar cells by band gap engineering.
Contribution of the Sn 5s state to the SnS valence band: direct observation via ARPES measurements

Issei Suzuki, Sakiko Kawanishi, Kiyohisa Tanaka, Takahisa Omata, Shin-ichiro Tanaka

Electronic Structure　4　(2)　025004-025004　2022/06/01
Publisher: IOP Publishing
DOI： 10.1088/2516-1075/ac6ea8 　

eISSN： 2516-1075

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Abstract Tin sulfide (SnS) is a compound semiconductor that has been studied for a wide range of applications, including solar cells and thermoelectric materials. In this study, the electronic structure of the SnS valence band, which is important for such applications, was investigated via angle-resolved photoelectron spectroscopy with two different excitation energies in the extreme ultraviolet region (21 and 60 eV). The contribution of the Sn 5s state to the SnS valence band was determined in relation to the k-vector by utilizing the fact that the cross section of Sn 5s state varies significantly compared to those of other states in the extreme ultraviolet region. The experimental results demonstrate that the Sn 5s state significantly contributed to the k-vector around the valence band maximum (VBM) and second VBM (VBM1).
Contribution of Dislocations in SiC Seed Crystals on the Melt-Back Process in SiC Solution Growth Peer-reviewed

Sakiko Kawanishi, Hiroyuki Shibata, Takeshi Yoshikawa

Materials　15　(5)　1796-1796　2022/02/27
Publisher: MDPI AG
DOI： 10.3390/ma15051796 　

eISSN： 1996-1944

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The melt-back process has a significant effect on the quality of solution-grown SiC crystals. However, the phenomena surrounding the SiC dissolution into the molten alloy during the melt-back process have not been clarified. In this study, the behavior of 4H-SiC dissolution into molten alloy was investigated by using high-temperature in situ observation and subsequent KOH etching, and the effects of different doping conditions and crystal polarity were studied. Local dissolutions with hexagonal pyramid-shape originating from threading screw dislocation (TSD) were observed on the C face of n-type SiC with light nitrogen doping. Our analysis of their behavior revealed that the process was governed by the spiral dissolution. In addition to the dissolution at TSD, local dissolutions at threading-edge dislocations were observed on the Si face of the same crystal. The shape of the local dissolution at the dislocation was significantly affected by the doping conditions and the polarity of the SiC crystal. This local dissolution may occur during the melt-back process, suggesting that it is important to promote the dissolution while maintaining a smooth interface through the selection of the seed crystal and by keeping the degree of interface undersaturation small.
Inhibitory Effect of MgO, FeO, CaF2, and Al2O3 Additives on the Dissolution Behavior of Ca from Silicate Mineral Phases into Water Peer-reviewed

Fang Ruan, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

Metallurgical and Materials Transactions B　53　(1)　407-417　2022/02/02
Publisher: Springer Science and Business Media LLC
DOI： 10.1007/s11663-021-02376-3 　

ISSN： 1073-5615

eISSN： 1543-1916
Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement Peer-reviewed

Issei Suzuki, Zexin Lin, Sakiko Kawanishi, Kiyohisa Tanaka, Yoshitaro Nose, Takahisa Omata, Shin-Ichiro Tanaka

Physical Chemistry Chemical Physics　24　(2)　634-638　2022/01
Publisher: Royal Society of Chemistry (RSC)
DOI： 10.1039/d1cp04553a 　

ISSN： 1463-9076

eISSN： 1463-9084

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The hole effective masses of SnS–SnSe solid solutions, crucial factors for their thermoelectric properties, are directly evaluated by ARPES measurement. They decrease slightly with increasing Se in the low Se range but sharply in the high Se range.
First Principles Calculation of Electrical and Optical Properties of Cu₃AsO₄: Promising Thin-Film Solar Cell Absorber from Nonferrous Metal Manufacturing By-Products Peer-reviewed

Issei Suzuki, Sakiko Kawanishi, Naoki Ohashi, Aiga Gomi, Junya Kano, Hiroto Watanabe, Satoshi Asano, Takahisa Omata

MATERIALS TRANSACTIONS　63　(1)　73-81　2022/01/01
Publisher: Japan Institute of Metals
DOI： 10.2320/matertrans.m-m2021851 　

ISSN： 1345-9678

eISSN： 1347-5320
n-type electrical conduction in SnS thin films Peer-reviewed

Issei Suzuki, Sakiko Kawanishi, Sage R. Bauers, Andriy Zakutayev, Zexin Lin, Satoshi Tsukuda, Hiroyuki Shibata, Minseok Kim, Hiroshi Yanagi, Takahisa Omata

Physical Review Materials　5　(12)　125405　2021/12/09
Publisher: American Physical Society (APS)
DOI： 10.1103/physrevmaterials.5.125405 　

eISSN： 2475-9953

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Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result, n-type SnS thin films have never been obtained. In this paper, we realize n-type conduction in SnS thin films by using radiofrequency-magnetron sputtering with Cl doping and a sulfur plasma source during deposition. Here, n-type SnS thin films are obtained at all the substrate temperatures employed in this paper (221-341 °C), exhibiting carrier concentrations and Hall mobilities of ∼2×1018cm-3 and 0.1-1cm2V-1s-1, respectively. The films prepared without a sulfur plasma source, on the other hand, exhibit p-type conduction despite containing a comparable amount of Cl donors. This is likely due to a significant number of acceptor-type defects originating from sulfur deficiency in p-type films, which appears as a broad optical absorption within the band gap. We demonstrate n-type SnS thin films in this paper for the realization of SnS homojunction solar cells, which are expected to have a higher conversion efficiency than the conventional heterojunction SnS solar cells.
Elucidation of Gas Formation Effect on Strong Inhibition of Magnetite Dissolution in Cu2S Through In-Situ Analysis of Reactive Interface

Seung-Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Makoto Ohtsuka, Junichi Takahashi, Hiroyuki Shibata

Metallurgical and Materials Transactions B　52　(6)　3720-3729　2021/12
Publisher: Springer Science and Business Media LLC
DOI： 10.1007/s11663-021-02279-3 　

ISSN： 1073-5615

eISSN： 1543-1916

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During copper smelting using a flash furnace, the solid magnetite (Fe3O4) phase that stagnates at the slag/matte interface inhibits the absorption of the suspended matte in the slag into the matte, resulting in copper loss. However, the phenomena that occur at the magnetite/matte interface are complex, and the effect of gas formation at the interface on the removal of magnetite has not been studied. In this study, we elucidated the effect of gas formation on the dissolution of the magnetite phase into the matte by directly observing the high-temperature reaction interface through the magnetite thin film. In contrast to the rapid dissolution of magnetite into FeS in the absence of gas formation, magnetite dissolution was strongly inhibited at the Cu2S/magnetite interface by the generation, agglomeration, and accumulation of SO2 gas bubbles. A quantitative analysis of the dissolution rate of the magnetite phase into Cu2S indicated that the mass transfer rate of Fe in the matte is extremely low. We also discuss the contribution of the generated SO2 gas to the inhibition of the interfacial reaction.
Thermal Conductivity of Sodium Silicate Glasses and Melts: Contribution of Diffusive and Propagative Vibration Modes Peer-reviewed

Sohei Sukenaga, Takahiko Endo, Tsuyoshi Nishi, Hiroki Yamada, Koji Ohara, Toru Wakihara, Koji Inoue, Sakiko Kawanishi, Hiromichi Ohta, Hiroyuki Shibata

Frontiers in Materials　8　753746　2021/11/01
Publisher: Frontiers Media SA
DOI： 10.3389/fmats.2021.753746 　

eISSN： 2296-8016

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The thermal conductivity of silicate melts and glasses is an important physical property for understanding the temperature distribution in high-temperature metallurgical processes; however, the mechanism of heat conduction in these non-crystalline materials remains unclear. Two types of vibration modes must be considered to understand the mechanism of heat conduction, namely, propagative and diffusive vibration modes. In the present study, we carefully derived the thermal conductivity of pure silica and sodium disilicate glasses and melts, and estimated the contribution of the diffusive vibration mode using a recently developed model. The results indicated that the diffusive vibration mode was not dominant in the silicate non-crystalline materials, whereas the propagative vibration mode (i.e., phonons) was dominant in the heat conduction of silicate glasses and melts, which is in contrast with borate glasses.
Suppressing solvent compositional change during solution growth of SiC using SiC/C gradient crucible Peer-reviewed

Sakiko Kawanishi, Hironori Daikoku, Hiroyuki Shibata, Takeshi Yoshikawa

Journal of Crystal Growth　576　126382-126382　2021/10
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2021.126382 　

ISSN： 0022-0248
Negligible Temperature Dependence of Nitrogen Solubility in Molten Silicon–Chromium Alloys at Middle Composition Range Peer-reviewed

Sakiko Kawanishi, Shogo Hachinoda, Hiroyuki Shibata

MATERIALS TRANSACTIONS　62　(10)　1519-1523　2021/08/20
Publisher: Japan Institute of Metals
DOI： 10.2320/matertrans.mt-m2021074 　

ISSN： 1345-9678

eISSN： 1347-5320
In Situ Interferometry for ppm-Order Solubility Analysis at High Temperatures: A Case Study of Carbon Solubility in Molten Silicon Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa, Didier Chaussende, Hiroyuki Shibata

Metallurgical and Materials Transactions B　52　(4)　2619-2625　2021/08
Publisher: Springer Science and Business Media LLC
DOI： 10.1007/s11663-021-02216-4 　

ISSN： 1073-5615

eISSN： 1543-1916
Density, surface tension, and viscosity of liquid Si–Cr alloys and influence on temperature and fluid flow during solution growth of SiC Peer-reviewed

Hironori Daikoku, Sakiko Kawanishi, Takehiko Ishikawa, Takeshi Yoshikawa

The Journal of Chemical Thermodynamics　106476-106476　2021/03
Publisher: Elsevier BV
DOI： 10.1016/j.jct.2021.106476 　

ISSN： 0021-9614
SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film Peer-reviewed

Sakiko Kawanishi, Issei Suzuki, Sage R. Bauers, Andriy Zakutayev, Hiroyuki Shibata, Hiroshi Yanagi, Takahisa Omata

Solar RRL　5　(4)　2000708-2000708　2021/02/25
Publisher: Wiley
DOI： 10.1002/solr.202000708 　

ISSN： 2367-198X

eISSN： 2367-198X

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Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p-type SnS polycrystalline thin films on the recently reported large n-type SnS single crystals. The p-type thin films consist of columnar grains that grow along the direction, which is the same orientation as the n-type single crystal. In addition, the interface of the pn homojunctions is void-free and compositionally sharp. The SnS homojunction solar cell achieves an open-circuit voltage (V-OC) of 360 mV, which is as large as the highest V-OC of previously reported SnS-based heterojunction solar cells. The built-in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (approximate to 1.1 eV), and larger than reported for heterojunctions (approximate to 0.7 eV). The resulting 1.4% conversion efficiency (eta) of the homojunction solar cell is smaller than the record 4-5% in heterojunctions, mainly due to the low short-circuit current density (J(SC)) of 7.5 mA cm(-2). Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparable J(SC) as the conventional heterojunction cells (approximate to 25 mA cm(-2)), high eta exceeding 4-5% will be realized with improving the V-OC.
Effect of the Silicate Skeleton Structure on the Dissolution Kinetics of Calcium Silicate Mineral Phases in Water Peer-reviewed

Fang Ruan, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

Metallurgical and Materials Transactions B　52　(2)　1071-1084　2021/02/18
Publisher: Springer Science and Business Media LLC
DOI： 10.1007/s11663-021-02079-9 　

ISSN： 1073-5615

eISSN： 1543-1916
Availability of Cr-rich Cr-Si solvent for rapid solution growth of 4H-SiC Peer-reviewed

Sakiko Kawanishi, Yoichiro Nagamatsu, Takeshi Yoshikawa, Hiroyuki Shibata

Journal of Crystal Growth　549　125877-125877　2020/11
Publisher: Elsevier {BV}
DOI： 10.1016/j.jcrysgro.2020.125877 　

ISSN： 0022-0248
Measurement and Thermodynamics of Carbon Solubilities in Molten Si–Fe, Si–Ni, and Si–Cr–Fe Alloys at 2073 K Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa

ISIJ International　60　(10)　2123-2128　2020/10/15
Publisher: Iron and Steel Institute of Japan
DOI： 10.2355/isijinternational.isijint-2019-511 　

ISSN： 0915-1559

eISSN： 1347-5460
Growth of Large Single Crystals of n-Type SnS from Halogen-Added Sn Flux Peer-reviewed

Sakiko Kawanishi, Issei Suzuki, Takeo Ohsawa, Naoki Ohashi, Hiroyuki Shibata, Takahisa Omata

Crystal Growth & Design　20　(9)　5931-5939　2020/09/02
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.cgd.0c00617 　

ISSN： 1528-7483

eISSN： 1528-7505

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© 2020 American Chemical Society. We report the growth of large Cl-doped and Br-doped SnS single crystals from a molten Sn-based flux. Compared with the small and lamellar undoped SnS crystals, the addition of SnCl2 or SnBr2 halogen sources in the flux substantially enhanced lateral growth along the (100)-plane and vertical growth. The maximum size of the obtained single crystals reached a diameter and thickness of 16 mm and 0.7 mm for the Cl-doped SnS and 24 mm and 1.0 mm for the Br-doped SnS, respectively. The X-ray rocking curves and the X-ray back-reflection Laue patterns indicated a high crystal quality. The obtained crystals were further characterized via electrical measurements, including electrical conductivity and Hall measurements, optical absorption spectroscopy, and X-ray and ultraviolet photoelectron spectroscopies. Both the Cl-doped and Br-doped SnS single crystals exhibited degenerate n-type conductivity with a high electrical conductivity of 11.1 S cm-1 for Cl-doped SnS and 18.9 S cm-1 for Br-doped SnS along the (100)-plane at 300 K. Furthermore, the photoelectron spectroscopy results also indicated n-type conductivity. The large single crystals of n-type SnS obtained in this work would enable the fabrication of p-n homojunction SnS solar cells via the deposition of p-type SnS thin films.
Experimental determination of solidified lithium disilicate crystal bandgap energy using EELS and XPS Peer-reviewed

Masanori Tashiro, Sohei Sukenaga, Sakiko Kawanishi, Yohei Sato, Yuji Takakuwa, Hiroyuki Shibata

Journal of the American Ceramic Society　103　(9)　5139-5144　2020/09
Publisher: Wiley
DOI： 10.1111/jace.17221 　

ISSN： 0002-7820

eISSN： 1551-2916
Nucleation Control of 3C-SiC Induced by the Spiral Structure of 6H-SiC Peer-reviewed

Sakiko Kawanishi, Ryo Watanabe, Hiroyuki Shibata

Crystal Growth & Design　20　(7)　4740-4748　2020/07/01
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.cgd.0c00498 　

ISSN： 1528-7483

eISSN： 1528-7505
Measurement of thermophysical properties of molten Si-Cr and Si-Fe alloys for design of solution growth of SiC Peer-reviewed

Sakiko Kawanishi, Mai Abe, Chihiro Koyama, Takehiko Ishikawa, Hiroyuki Shibata

Journal of Crystal Growth　541　125658-125658　2020/07
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2020.125658 　

ISSN： 0022-0248
Effect of the Silicate Structure on Calcium Elution Behaviors of Calcium-silicate Based Mineral Phases in Aqueous Solution Peer-reviewed

Fang Ruan, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

ISIJ International　60　(3)　419-425　2020/03/15
Publisher: Iron and Steel Institute of Japan
DOI： 10.2355/isijinternational.isijint-2019-263 　

ISSN： 0915-1559

eISSN： 1347-5460
Thermomigration of molten Cr-Si-C alloy in 4H-SiC at 1873–2273 K Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa, Hiroyuki Shibata

Journal of Crystal Growth　518　73-80　2019/07
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2019.04.022 　

ISSN： 0022-0248
2073Kにおける溶融Si-Fe, Si-NiおよびSi-Fe-Cr合金中の炭素溶解度の測定と熱力学評価 Peer-reviewed

川西咲子, 吉川健

鉄と鋼　105　(3)　389-394　2019/03

DOI： 10.2355/tetsutohagane.TETSU-2018-103 　
Mechanism of Replicating 4H-SiC Polytype during Solution Growth on Concave Surface Peer-reviewed

Hironori Daikoku, Sakiko Kawanishi, Takeshi Yoshikawa

Crystal Growth & Design　18　(7)　3820-3826　2018/07/05
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.cgd.8b00032 　

ISSN： 1528-7483

eISSN： 1528-7505
In Situ Interface Observation of 3C-SiC Nucleation on Basal Planes of 4H-SiC During Solution Growth of SiC from Molten Fe-Si Alloy Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa

JOM　70　(7)　1239-1247　2018/07/01
Publisher: Minerals, Metals and Materials Society
DOI： 10.1007/s11837-018-2912-2 　

ISSN： 1543-1851 1047-4838

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Solution growth is a promising process to obtain high-quality 4H-SiC crystal for application in high-voltage-power devices. Polytype transition from 4H-SiC into 6H-, 15R-, or 3C-SiC is one of the major issues to be solved to achieve rapid growth of large-diameter 4H-SiC crystals. In this study, the mechanism for the polytype transition to 3C-SiC during the solution growth process was determined from in situ interface observation of SiC growth on basal planes of 4H-SiC from Fe-36 mol.%Si alloy at 1680–1885 K. The nucleation behavior of 3C-SiC on 4H-SiC was discussed in terms of classical nucleation theory.
Solution growth of silicon carbide using unary chromium solvent Peer-reviewed

Ryo Miyasaka, Sakiko Kawanishi, Taka Narumi, Hideaki Sasaki, Takeshi Yoshikawa, Masafumi Maeda

Journal of Crystal Growth　460　23-26　2017/02
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2016.12.049 　

ISSN： 0022-0248

eISSN： 1873-5002

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Solution growth of silicon carbide (SiC) using unary chromium (Cr) solvent was studied because the system enables a high solubility difference and a low degree of supersaturation, which would lead to rapid growth with a stabilized growth interface. The liquidus composition at SiC saturation in a quasi-binary Cr–SiC system was studied at 1823–2173 K. The measured carbon (C) contents are in good agreement with the thermodynamic evaluation using the sub-regular solution model. In addition, growth experiments using a unary Cr solvent were performed by the bottom-seeded travelling solvent method. The obtained growth rates at 1803–1923 K with a temperature difference of 15–70 K were proportional to the solubility difference between the seed and source temperatures, indicating that the growth was controlled by the mass transfer of C in the solution. The maximum growth rate of 720 µm/h at 1803 K was much higher than the growth rate by Si-rich solvents, suggesting that the Cr-rich solvent is suitable for the rapid growth at a low temperature.
Thermodynamics and Kinetics of Direct Synthesis of Solar Grade Silicon from Metallurgical Silicon Wafer by Liquid Phase Migration in Solid Silicon Peer-reviewed

Sakiko Kawanishi, Kunitoshi Matsunaga, Takeshi Yoshikawa, Kazuki Morita

MATERIALS TRANSACTIONS　58　(11)　1571-1580　2017
Publisher: JAPAN INST METALS
DOI： 10.2320/matertrans.M2017202 　

ISSN： 1345-9678

eISSN： 1347-5320

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We propose a process for the direct synthesis of solar grade Si from a metallurgical Si wafer focusing on the fact that its microstructure is composed of almost pure Si grains and grain boundaries enriched with impurities. Principally, heating a metallurgical grade Si wafer above its eutectic temperature and applying a temperature gradient allows the grain boundaries to be melted and causes them to migrate to the high-temperature direction. The liquid phases are finally terminated at the end surface, resulting in the upgrading of the Si and making it more favorable for solar cells. In the present paper, to determine the purification effect during the liquid phase migration process, thermodynamic assessment was performed using CALPHAD method. Liquid phase migration experiments were also conducted using synthetic MG-Si (Si-Fe alloy) to determine the reaction time for the process. A maximum migration velocity of 8.17 x 10(-7) m/s was obtained at 1623 K, which allows the migration process to be accomplished within 3 min for a 150-mu m wafer.
Measurement and Thermodynamic Analysis of Carbon Solubility in Si–Cr Alloys at SiC Saturation Peer-reviewed

Hironori Daikoku, Sakiko Kawanishi, Takeshi Yoshikawa

MATERIALS TRANSACTIONS　58　(10)　1434-1438　2017
Publisher: Japan Institute of Metals
DOI： 10.2320/matertrans.m2016465 　

ISSN： 1345-9678

eISSN： 1347-5320

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Si–Cr alloy is one of the predominant solvents for rapid solution growth of 4H–SiC crystals. The solubilities of carbon in Si–40 mol%Cr alloy at SiC saturation at 1773–2273 K and in Si–Cr alloys of various chromium contents at 2073 K were measured by equilibrating the Si–Cr alloy with a 4H–SiC single crystal. Carbon solubility in Si–40 mol%Cr alloy increased with temperature from 0.22 mol% at 1773 K to 3.59 mol% at 2273 K. At 2073 K, carbon solubility at SiC saturation increased with the chromium content in the liquid from 0.18 mol% in Si–20 mol%Cr to 16.4 mol% in Si–80 mol%Cr. A thermodynamic analysis of the Si–Cr–C alloy was also conducted. Although the sub-regular solution model is often adopted to estimate phase relations in solution systems, this predicted a carbon solubility in Si-40 mol%Cr at SiC saturation more than two times higher than the measured value. In contrast, a quasi-chemical model that considered the competition between substitutional Si and Cr atoms bonding to interstitial carbon atoms reproduced the activity coefficient of carbon in Si–Cr alloys of 60–100 mol%Si composition, in which the carbon solubility at SiC saturation was less than 1.5 mol%, fairly well. This quasi-chemical model enabled the precise phase relation to be evaluated when designing the solution growth of SiC using a Si–Cr solvent.
Reassessment of Solid Solubilities and Thermodynamic Properties of Magnesium and Calcium in Silicon Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa

MATERIALS TRANSACTIONS　58　(3)　450-452　2017
Publisher: Japan Institute of Metals
DOI： 10.2320/matertrans.m2016323 　

ISSN： 1345-9678

eISSN： 1347-5320

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To obtain fundamental knowledge on the behavior of magnesium (Mg) and calcium (Ca) in solid silicon (Si) during solidification, the solid solubilities of Mg and Ca in Si were reinvestigated by temperature-gradient zone melting method. Solubilities were measured to be 0.0016–0.0041 mol% for Mg and 0.0006–0.0021 mol% for Ca at 1373–1623 K. The excess Gibbs energies of Mg and Ca in solid Si were determined from their solid solubilities as follows:RT ln γ^°_{Mg(s)in solid Si}=193,000(±52,000)-69.8(±34)T (J/mol)RT ln γ^°_{Ca(s)in solid Si}=140,000(±35,000)-72.6(±23)T (J/mol)
Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface Peer-reviewed

Sakiko Kawanishi, Masao Kamiko, Takeshi Yoshikawa, Yoshitaka Mitsuda, Kazuki Morita

Crystal Growth & Design　16　(9)　4822-4830　2016/09/07
Publisher: American Chemical Society (ACS)
DOI： 10.1021/acs.cgd.5b01777 　

ISSN： 1528-7483

eISSN： 1528-7505

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© 2016 American Chemical Society. Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.
Effect of van der Waals interactions on the stability of SiC polytypes Peer-reviewed

Sakiko Kawanishi, Teruyasu Mizoguchi

Journal of Applied Physics　119　(17)　175101-175101　2016/05/07
Publisher: AIP Publishing
DOI： 10.1063/1.4948329 　

ISSN： 0021-8979

eISSN： 1089-7550
Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC Peer-reviewed

Taka Narumi, Sakiko Kawanishi, Takeshi Yoshikawa, Kazuhiko Kusunoki, Kazuhito Kamei, Hironori Daikoku, Hidemitsu Sakamoto

JOURNAL OF CRYSTAL GROWTH　408　25-31　2014/12
Publisher: ELSEVIER SCIENCE BV
DOI： 10.1016/j.jcrysgro.2014.08.027 　

ISSN： 0022-0248

eISSN： 1873-5002

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Solution growth of SiC is currently regarded as a promising process to produce high quality SiC crystals. To date, Si-Cr, Si-Ti, and Fe-Si solvents have been used for rapid solution growth of SiC. However, optimization of the solvent system and composition is still needed to maximize the growth rate of high quality SiC crystals. In this paper, to clarify the features of respective solvents from the viewpoint of the solubility of carbon, the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems were evaluated by thermodynamic analysis. Phase relations in the respective ternary systems were investigated by the calculation of phase diagrams method. In addition, the solubility of carbon in Si-Cr, Si-Ti, and Fe Si alloys at saturation with SiC was measured and its consistency with the estimated results was examined. Correlation of the experimental growth rate of SiC using Si-Cr, Si-Ti, and Fe Si solvents was analyzed in terms of the supersaturation of carbon in each solution evaluated from the estimated temperature dependence of carbon solubility. Rate determining step for solution growth was presumed to be mass transfer in the liquid phase. (C) 2014 Elsevier By. All rights reserved.
Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita, Kazuhiko Kusunoki, Kazuhito Kamei, Hiroshi Suzuki, Hidemitsu Sakamoto

JOURNAL OF APPLIED PHYSICS　114　(21)　214313-214313　2013/12
Publisher: AMER INST PHYSICS
DOI： 10.1063/1.4837575 　

ISSN： 0021-8979

eISSN： 1089-7550

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Real-time observation of the high temperature interface between silicon carbide (SiC) and liquid alloy is indispensable to optimize the conditions for producing high quality SiC crystals by the solution growth method. In this work, real-time observation of the interface was established by using the interference observation to measure the height profile of the interface. The temperature dependence of the refractive index of 4H-SiC was measured up to 1773 K. The height measurement was then carried out for the SiC/alloy interface at 1573 K. From interference observation, bunched step heights of less than 10 nm were measured. The developed technique was applied for the real-time observation of dissolution behavior of SiC into molten Fe-Si alloy at 1573 K. The dissolution kinetics was discussed in terms of carbon mass transfer in the solution and interfacial reaction. (C) 2013 AIP Publishing LLC.
Solution growth behavior of Sic by a temperature difference method using Fe-Si solvent Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita, Nobuhiro Okada, Kazuhiko Kusunoki, Kazuhito Kamei

JOURNAL OF CRYSTAL GROWTH　381　121-126　2013/10
Publisher: ELSEVIER SCIENCE BV
DOI： 10.1016/j.jcrysgro.2013.07.021 　

ISSN： 0022-0248

eISSN： 1873-5002

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The solution growth behavior of silicon carbide (Sic) by a temperature difference method using Fe-Si solvent below 1773K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution. Which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the solution by substrates rotation, lateral growth of Sic was observed over the entire region of the contacting area. Growth rates SiC of 60-160 m/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC. (C) 2013 Elsevier B.V. All rights reserved.
Investigation on solution growth of SiC by temperature difference method using Fe-Si solvent Peer-reviewed

Takeshi Yoshikawa, Sakiko Kawanishi, Kazuki Morita, Toshihiro Tanaka

Materials Science Forum　740-742　31-+　2013
Publisher: TRANS TECH PUBLICATIONS LTD
DOI： 10.4028/www.scientific.net/MSF.740-742.31 　

ISSN： 0255-5476

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This paper describes the solution growth of SiC by means of temperature difference method using an Fe - Si solvent. Crystal growth experiments of SiC from an Fe - 40 mol% Si solvent onto a seed wafer of 6H-SiC or 4H-SiC were carried out at 1623 - 1723 K under induction heating. Homo-epitaxial growth on both 6H-SiC and 4H-SiC was identified by Raman spectroscopy, and the growth rate of SiC was obtained to be 90 - 260 mu m/h. Experiment was also conducted under resistance heating at 1623 K at the condition in suppressing natural convection. The importance of the convective mass transfer in the solution was found for the rapid growth of SiC.
Real-time observation of high temperature interface between SiC substrate and solution during dissolution of SiC Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita

Materials Science Forum　740-742　35-38　2013
Publisher: TRANS TECH PUBLICATIONS LTD
DOI： 10.4028/www.scientific.net/MSF.740-742.35 　

ISSN： 0255-5476

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Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the "wide" bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.
Solution Growth of Silicon Carbide Using Fe-Si Solvent Peer-reviewed

Takeshi Yoshikawa, Sakiko Kawanishi, Toshihiro Tanaka

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(5)　2010/05
Publisher: JAPAN SOC APPLIED PHYSICS
DOI： 10.1143/JJAP.49.051302 　

ISSN： 0021-4922

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In this paper, we describe the use of liquid Fe-Si alloy as the solvent for the solution growth of silicon carbide (SiC). Iron was chosen owing to the high solubility of carbon in molten iron. The crystal growth of SiC from Fe-40 mol% Si solvent on a seed crystal wafer of 6H- or 4H-SiC was carried out at 1,623-1,723 K using induction heating. The growth rate of SiC was obtained to be 90-260 mu m/h. Furthermore, Raman spectroscopy revealed homo epitaxial growth on both 6H- and 4H-SiC under the experimental conditions used. Thus, the Fe-Si solvent was found to be effective for the rapid solution growth of SiC. (C) 2010 The Japan Society of Applied Physics
Thermodynamics of impurity elements in solid silicon Peer-reviewed

Takeshi Yoshikawa, Kazuki Morita, Sakiko Kawanishi, Toshihiro Tanaka

JOURNAL OF ALLOYS AND COMPOUNDS　490　(1-2)　31-41　2010/02
Publisher: ELSEVIER SCIENCE SA
DOI： 10.1016/j.jallcom.2009.09.190 　

ISSN： 0925-8388

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The determination of thermodynamic properties of impurity elements in solid silicon is important to control their incorporation or doping into silicon during materials processing. In this paper, we review the reported solid solubilities of impurities in silicon prior to the thermodynamic evaluation. These solid solubilities as well as the segregation ratios of impurities between solid and liquid silicon at its melting point were used in a thermodynamic analysis to evaluate the excess partial molar Gibbs energy of the impurities in solid silicon. The excess Gibbs energies were determined for 15 impurity elements and we discuss the effect of lattice strain which is caused by the substitutional impurity in silicon. (c) 2009 Elsevier B.V. All rights reserved.
Fundamental study for solvent growth of silicon carbide utilizing Fe-Si melt Peer-reviewed

T Yoshikawa, S Kawanishi, T Tanaka

Journal of Physics: Conference Series　165　(1)　012022-012022　2009/05/01
Publisher: IOP Publishing
DOI： 10.1088/1742-6596/165/1/012022 　

ISSN： 1742-6588

eISSN： 1742-6596
Equilibrium Phase Relationship between SiC and a Liquid Phase in the Fe-Si-C System at 1523-1723 K Peer-reviewed

Sakiko Kawanishi, Takeshi Yoshikawa, Toshihiro Tanaka

MATERIALS TRANSACTIONS　50　(4)　806-813　2009/04
Publisher: JAPAN INST METALS
DOI： 10.2320/matertrans.MRA2008404 　

ISSN： 1345-9678

eISSN： 1347-5320

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Fe-Si melt is a candidate for use as an alloy solvent for rapid liquid phase growth of SiC because of the high solubility of carbon in molten iron. In this work, the equilibrium phase relationship between SiC and the liquid phase of the Fe-Si-C system was studied to determine the optimal composition of a high SiC content solvent. The solubility of carbon in molten silicon was examined and the thermodynamic properties of the liquid phase in the Si-C system were reassessed. The phase relationship between SiC and Fe-Si melt was investigated by the equilibration technique at 1523-1723 K. It was found that Fe-36 mol% Si alloy equilibrates with SiC at the corresponding temperatures. The equilibrium phase relationship between SiC and various compositions of Fe-Si melts was studied by using thermodynamic calculations. The results indicated that SiC is far more soluble in iron-rich Fe-Si melt than in silicon-rich melt. The Fe-Si melt of Fe-36 mol% Si composition possessing high SiC solubility should be a suitable solvent for rapid liquid phase growth of SiC. [doi: 10.2320/matertrans.MRA2008404]

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Misc. 70

侵入型モデルによる溶融合金中酸素の熱力学的挙動の再検討

吉川健, 川西咲子, 柴田千尋

材料とプロセス　36　(1)　18-18　2023/03
サクシノニトリル系溶液を用いた凝固過程のミクロ偏析および介在物生成挙動の評価

川西咲子, 寺島慎吾, 塚原優希, 柴田浩幸

材料とプロセス　36　(1)　1-3　2023/03
Dissolution rate of graphite and SiC into molten Si-Cr alloy

36　(1)　316　2023/03
サクシノニトリル系合⾦を⽤いた凝固過程のミクロ偏析の定量評価

塚原優希, 川⻄咲子, 柴田浩幸

日本鉄鋼協会第57回学生ポスターセッション概要集 PS-8　2023/03
Incorporation limit of molybdenum oxide in sodium borosilicate glasses

CAMP-ISIJ　36　(1)　320　2023/03/01
Effect of MgO content on the viscosity of copper slag

Yong Wang, Sohei Sukenaga, Masanori Tashiro, Sakiko Kawanishi, Hiroyuki Shibata

CAMP-ISIJ　36　(1)　322　2023/03/01
Na2O–B2O3–SiO2 系ガラスへの MoO3 の含有限界濃度に及ぼす B2O3/SiO2 比の影響

NWG2022-08　2022/10/01
SiC/C圧粉体へのSiの反応性含浸による高かさ密度SiC作製

五十嵐壮太, 川西咲子, 三谷武志, Didier Chaussende, 吉川健, 柴田浩幸

日本金属学会講演概要集　51-51　2022/09
SiC飽和条件下での溶液成長によるSiC微結晶由来マクロ欠陥の抑制

三谷武志, 川西咲子, Didier Chaussende, 吉川健

日本金属学会講演概要集　50-50　2022/09
Viscosity measurement of copper smelting slags

Sohei Sukenaga, Issei Takahashi, Masanori Tashiro, Sakiko Kawanishi, Hiroyuki Shibata

9　(2)　1201-08-04　2022/09/01
Effect of AlO1.5/SiO2 ratio on viscosity of alkali silicate melts Peer-reviewed

Sohei Sukenaga, Ryota Ikoma, Masanori Tashiro, Sakiko Kawanishi, Hiroyuki Shibata

CAMP-ISIJ　35　(2)　468-468　2022/09/01
Investigation of leaching mechanism of CaSiO₃ and CaMgSi₂O₆ by fluorescence imaging

8-8　2022/09/01
Viscosity of silicate melts containing transition metal cations

Sohei Sukenaga, Issei Takahashi, Kozo Shinoda, Daniel Neuville, Sakiko Kawanishi, Hiroyuki Shibata

Abstract of the 13th Asian Thermophysical Properties Conference, ATPC2022　OS12-3-04　2022/09/01
アルカリ土類鉄ケイ酸塩融体および過冷却液体の粘度

助永壮平, 高橋一誠, 篠田弘造, 川西咲子, 柴田浩幸

材料とプロセス　35　317-317　2022/03/01
銅溶錬マットへのマグネタイトの溶解挙動に及ぼすガス発生の影響

申勝煥, 川西咲子, 助永壮平, 高橋純一, 柴田浩幸

材料とプロセス　35　315-315　2022/03/01
溶融 Si-Cr 合金中窒素の熱力学量の評価

川西咲子, 八野田将吾, 助永壮平, 柴田浩幸

材料とプロセス　35　320-320　2022/03/01
Na2O-SiO2-B2O3 三元系における酸化モリブデンの見かけの溶解度評価

助永壮平, 宇野澤大槻, 田代公則, 川西咲子, 柴田浩幸

国際ガラス年2022(IYoG2022)記念行事「第3回放射性廃棄物固化体討論会」予稿集　NWG2021-19　2022/01/01
Calcium Elution Mechanism from Silicate-Based Minerals into Water Invited

SHIBATA Hiroyuki, FANG Ruang, KAWANISHI Sakiko, SUKENAGA Sohei

Abstract of 2021 China Symposium on Sustainable Iron- and Steelmaking Technology　2021/12
ホモ接合によるSnS太陽電池の高効率化 Invited

鈴木一誓, 川西咲子

クリーンエネルギー (日刊工業出版)　30　(10)　2021/10
蛍光イメージング法によるミクロ偏析挙動の可視化

寺島慎吾, 川西咲子, 柴田浩幸

日本鉄鋼協会第182回秋季講演大会第54回学生ポスターセッション概要集　PS-8　2021/09
Effect of FeS concentration on SO2 formation at Cu2S-FeS matte/magnetite interface isnvestigated by in-situ observation

Seung-Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Junichi Takahashi, Hiroyuki Shibata

8　(2)　1K0506-12-04　2021/09
X線吸収分光による酸化物融体中金属の化学状態直接分析

篠田弘造, 川西咲子, 助永壮平

資源・素材講演集　8　(2)　3K0401-06-02　2021/09
Nitrogen behavior in Cr-Ni solvent used for solution growth of AlN

黒坂真一朗, 川西咲子, 鳴海大翔, 鳴海大翔, 吉川健

CAMP-ISIJ　34　(1)　276-276　2021/03

ISSN： 1882-8922
Solubility measurement in melt by 3D shape analysis of high-temperature solid/liquid interface

川西咲子, 吉川健, CHAUSSENDE Didier, 柴田浩幸

CAMP-ISIJ　34　(1)　271-271　2021/03

ISSN： 1882-8922
Thermal conductivity of alkali silicate melts and glasses

助永壮平, 遠藤貴彦, 山田大貴, 江部健太, 西剛史, 脇原徹, 尾原幸治, 川西咲子, 太田弘道, 柴田浩幸

CAMP-ISIJ　34　(1)　270-270　2021/03

ISSN： 1882-8922
Quantitative evaluation of solute concentration around solidification interface by interferometry

川西咲子, 塩沢優大, 柴田浩幸

CAMP-ISIJ　34　(1)　89-89　2021/03

ISSN： 1882-8922
Clarification of reaction mechanism between magnetite and Cu2S using in-situ observation

Seunghwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

Tohoku-Melbourne Joint Workshop in Materials Science, Program & Abstracts　29-29　2020/11
Evaluation of temperature dependence of bandgap for in-situ discrimination of SiC polytypes

Tomohiro Yamada, Sakiko Kawanishi, Hiroyuki Shibata

2020 ONLINE JOINT SYMPOSIUM　30-30　2020/11
Effect of Halogen on Solution Growth of SnS Single Crystals

川西咲子, 鈴木一誓, 小俣孝久, 柴田浩幸

結晶成長国内会議予稿集(CD-ROM)　49th　11a-A09　2020/11

ISSN： 0385-6275
硫化スズの観察

川西咲子

東北大学産学連携先端材料研究開発センター活動報告書　139-139　2020/09
SiCポリタイプのその場判別に向けたバンドギャップの温度特性評価

山田智大, 川西咲子, 柴田浩幸

日本金属学会講演概要集　P128　2020/09
Glass formation of high-iron silicate slags

助永壮平, MAI Paolo, 川西咲子, 柴田浩幸

資源・素材(Web)　7　(2)　1K0603-12-04　2020/09
Analysis of magnetite/matte interface reaction by in-situ observation

川西咲子, SHIN Seung-hwan, 助永壮平, 高橋純一, 柴田浩幸

資源・素材(Web)　7　(2)　1K0603-12-03　2020/09
スパッタリング法によるn 型SnS 薄膜の作製

鈴木一誓, 川西咲子, Sage Bauers, Andriy Zakutayev, 柴田浩幸, 柳博, 小俣孝久

第81回応用物理学会秋季学術講演会講演予稿集　12-039-12-039　2020/09
Fabrication of pn homojunction of SnS and its photovoltaic properties

川西咲子, 鈴木一誓, BAUERS Sage, ZAKUTAYEV Andriy, 柴田浩幸, 柳博, 小俣孝久

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　81st　12-038-12-038　2020/09
Relationship between the Silicate Skeleton Structure and the Dissolution Kinetics of Calcium-Silicate Mineral Phases into Water

Fang RUAN, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

CAMP-ISIJ　33　(2)　522-522　2020/09
蛍光イメージングによるCaSiO3の水溶液への溶出挙動の可視化

中山日菜子, 川西咲子, 川野潤, 柴田浩幸

CAMP-ISIJ　33　(2)　PS-6-PS-6　2020/09

ISSN： 1882-8922
Investigation of factors for decreasing reaction rate between magnetite and matte by novel in-situ interface observation technique

Seung Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Junichi Takahashi, Hiroyuki Shibata

P61-P61　2020/09
男女共同参画学協会連絡会第4回大規模アンケート日本鉄鋼協会・日本金属学会ダイジェスト版

松岡由貴, 御手洗容子, 川西咲子, 上田正人, 杉浦夏子, 三浦永理, 尾崎由紀子, 戸田佳明

1-23　2020/06
6H-SiCの周期ステップ構造を利用した3C-SiCの核生成制御

川西咲子, 渡邉遼, 柴田浩幸

第166回日本金属学会講演概要集　S2.7-S2.7　2020/03
Cr-Ni溶媒を用いたAlNの溶液成長における諸因子

黒坂真一朗, 福田敦, 鳴海大翔, 川西咲子, 吉川健

第166回日本金属学会講演概要集　S2.10-S2.10　2020/03
Evaluation of interface reaction between magnetite and matte by in-situ observation

Seung Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Makoto Ohtsuka, Junichi Takahashi, Hiroyuki Shibata

P147　2020/03
Consideration on thermodynamic properties of carbon and nitrogen in molten alloy

CAMP-ISIJ　33　(1)　160-160　2020/03
The Preferential Dissolution Behavior of Calcium into Water from the Calcium-Silicate Mineral Phases

Fang RUAN, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

CAMP-ISIJ　33　(1)　156-156　2020/03
Sputtering deposition of n-type SnS thin films

鈴木一誓, 川西咲子, BAUERS Sage, ZAKUTAYEV Andriy, 柴田浩幸, KIM Minesok, 柳博, 小俣孝久

資源・素材(Web)　2020　2020
第 13 回本会派遣 JIM / TMS Young Leader International Scholar 出張報告 Invited

川西咲子

日本金属学会誌まてりあ「学会・研究会だより」　58　(7)　401-401　2019/07
SiC単結晶の溶液成長の冶金学的アプローチ

吉川健, 鳴海大翔, 鳴海大翔, 川西咲子

日本金属学会講演概要(CD-ROM)　164th　ROMBUNNO.S2.6　2019/03/06

ISSN： 2433-3093
SiC溶液成長時の成長界面に及ぼすCr-Si合金溶媒の熱伝導率の影響

阿部舞, 川西咲子, 柴田浩幸

材料とプロセス(CD-ROM)　32　(1)　2019

ISSN： 1882-8922
SiC溶液成長時の溶液内熱流動に及ぼす各種物性値の影響

川西咲子, 大黒寛典, 大黒寛典, 石川毅彦, 阿部舞, 柴田浩幸, 吉川健

日本金属学会講演概要(CD-ROM)　164th　2019

ISSN： 2433-3093
鉄ケイ酸塩スラグの還元過程における表面張力変化

助永壮平, 川西咲子, 打越雅仁, 石原真吾, 夏井俊悟, 大野光一郎, 齊藤敬高, 中島邦彦, 柴田浩幸

資源・素材(Web)　2019　2019
In-situ observation of competition of domains during high-temperature solution growth of SiC

川西咲子, 吉川健, 柴田浩幸

結晶成長国内会議予稿集(CD-ROM)　48th　2019

ISSN： 0385-6275
SPECTRAL EMISSIVITY MEASUMENTS AND HEAT CAPACITY CALCULATION OF MOLTEN Cr-Si WITH AN ELESTROSTATIC LEVITATOR

仲田結衣, 渡邊勇基, 小山千尋, 石川毅彦, 川西咲子, 柴田浩幸, 吉川健

Thermophysical Properties　40th　2019

ISSN： 0911-1743
3C-SiC二次元核生成に及ぼす6H-SiC種結晶の極性面とステップ構造の影響

渡邊遼, 川西咲子, 柴田浩幸

日本金属学会講演概要(CD-ROM)　162nd　2018

ISSN： 2433-3093
溶媒移動法における物質移動現象を利用した1600-2000°Cでの諸物性値の評価

川西咲子, 吉川健, 柴田浩幸

日本金属学会講演概要(CD-ROM)　163rd　2018

ISSN： 2433-3093
SiC溶液成長時の熱流動に及ぼすFe-Si合金溶媒の熱伝導率の影響

阿部舞, 川西咲子, 柴田浩幸

東北大学多元物質科学研究所研究発表会講演予稿集　18th　2018
MEASUREMENT OF THERMAL CONDUCTIVITY OF MOLTEN Fe-Si ALLOYS

阿部舞, 川西咲子, 柴田浩幸

Thermophysical Properties　39th　2018

ISSN： 0911-1743
Rapid Solution Growth of AlN Using Cr–Ni Solvent on C, A, and R Faces of Sapphire Substrates Peer-reviewed

Shinichiro Kurosaka, Kanaparin Ariyawong, Taka Narumi, Sakiko Kawanishi, Takeshi Yoshikawa

International Conference of Silicon Carbide and Related Materials 2017　2017/09
Cr-Si系溶媒の過飽和度が4H-SiCの溶液成長挙動に及ぼす影響

永松洋一郎, 川西咲子, 柴田浩幸, 吉川健

日本金属学会講演概要(CD-ROM)　161st　2017

ISSN： 2433-3093
6H-SiCの貫通らせん転位を利用した3C-SiC核生成制御

渡邊遼, 川西咲子, 柴田浩幸

日本金属学会講演概要(CD-ROM)　161st　2017

ISSN： 2433-3093
Effect of N2 partial pressure on solution growth of AlN using Cr–Ni solvent

Shinichiro Kurosaka, Taka Narumi, Hideaki Sasaki, Sakiko Kawanishi, Didier Chaussende, Takeshi Yoshikawa, Masafumi Maeda

European Conference of Silicon Carbide and Related Materials 2016　2016/09/28
Cr‐Ni溶媒を用いたサファイア上AlN溶液成長結晶の配向性の検討

黒坂真一朗, 鳴海大翔, 川西咲子, 川西咲子, 吉川健, 前田正史

日本金属学会講演概要(CD-ROM)　159th　ROMBUNNO.186　2016/09

ISSN： 1342-5730
4H‐SiC単結晶の溶液成長に向けたCr溶媒の検討

宮坂遼, 鳴海大翔, 川西咲子, 川西咲子, 佐々木秀顕, 吉川健, 前田正史

日本金属学会講演概要(CD-ROM)　158th　ROMBUNNO.347　2016/03

ISSN： 1342-5730
Cr‐Ni溶媒を用いたAlNの溶液成長におけるサファイア種結晶の結晶面の影響

黒坂真一朗, 鳴海大翔, 川西咲子, 川西咲子, 佐々木秀顕, 吉川健, 前田正史

応用物理学会春季学術講演会講演予稿集(CD-ROM)　63rd　ROMBUNNO.21A-H121-7　2016/03
Cr系溶媒を用いた単結晶SiC溶液成長における炭素過飽和量と成長速度の関係

宮坂遼, 鳴海大翔, 川西咲子, 川西咲子, 佐々木秀顕, 吉川健, 前田正史

応用物理学会春季学術講演会講演予稿集(CD-ROM)　63rd　ROMBUNNO.20A-H101-1　2016/03
4H-SiC単結晶の溶液成長に向けたCr溶媒の検討

宮坂遼, 鳴海大翔, 川西咲子, 川西咲子, 佐々木秀顕, 吉川健, 前田正史

日本金属学会講演概要(CD-ROM)　158th　2016

ISSN： 2433-3093
Cr-Ni溶媒を用いたサファイア上AlN溶液成長結晶の配向性の検討

黒坂真一朗, 鳴海大翔, 川西咲子, 川西咲子, 吉川健, 前田正史

日本金属学会講演概要(CD-ROM)　159th　2016

ISSN： 2433-3093
Investigation of dissolution behavior of graphite into Fe–36mol%Si solvent for rapid solution growth of SiC Peer-reviewed

Taka Narumi, Sakiko Kawanishi, Didier Chaussende, Takeshi Yoshikawa

European Conference of Silicon Carbide and Related Materials 2014　2014/09
黒鉛回転円柱のFe‐36mol%Si合金への溶解反応(Fe‐Si合金への黒鉛の準安定溶解反応の基礎的検討 2))

鳴海大翔, 川西咲子, 吉川健

材料とプロセス(CD-ROM)　27　(1)　ROMBUNNO.16　2014/03

ISSN： 1882-8922
静滴法によるFe‐36mol%Si合金への黒鉛の溶解反応の調査(Fe‐Si合金への黒鉛の準安定溶解反応の基礎的検討 1))

鳴海大翔, 川西咲子, 吉川健

材料とプロセス(CD-ROM)　27　(1)　ROMBUNNO.15　2014/03

ISSN： 1882-8922
可視光透過法によるSiC結晶 : 溶融合金界面のIn-situ観察 (特集次世代を担う若手熱物性研究者の最近の研究)

吉川健, 川西咲子

金属　84　(2)　130-137　2014/02
Publisher: アグネ技術センター
ISSN： 0368-6337

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Presentations 152

結晶成長を視る -SiCの高温溶液成長ダイナミクス- Invited

川西咲子

GiSM 第2回ワークショップ　2023/03/28
高温反応場の制御に向けたその場観察による挑戦 Invited

川西咲子

第166回製鋼部会　2023/03/13
化合物半導体材料の高温溶液成長の研究 Invited

川西咲子

国際女性デー記念第6回紫千代萩賞受賞講演会　2023/03/13
ナトリウムボロシリケート系ガラス中への酸化モリブデンの含有限界濃度

助永壮平, 岸哲生, 宇野澤大槻, 高草木寧緒, 安東真理子, 田代公則, 川西咲子, 柴田浩幸

日本金属学会 2023年春期第172回講演大会　2023/03/09
Effect of MgO content on the viscosity of copper slag

Yong Wang, Sohei Sukenaga, Masanori Tashiro, Sakiko Kawanishi, Hiroyuki Shibata

2023/03/09
溶融Si-Cr合金への黒鉛およびSiCの溶解速度

五十嵐壮太, 川西咲子, 三谷武志, 吉川健, 柴田浩幸

日本金属学会 2023年春期第172回講演大会　2023/03/09
サクシノニトリル系合⾦を⽤いた凝固過程のミクロ偏析の定量評価

塚原優希, 川西咲子, 柴田浩幸

日本鉄鋼協会第185回春季講演大会　2023/03/09
サクシノニトリル系溶液を用いた凝固過程のミクロ偏析および介在物生成挙動の評価

川西咲子, 寺島慎吾, 塚原優希, 柴田浩幸

日本鉄鋼協会第185回春季講演大会　2023/03/08
侵入型モデルによる溶融合金中酸素の熱力学的挙動の再検討

吉川健, 川西咲子, 柴田千尋

日本鉄鋼協会第185回春季講演大会　2023/03/08
その場観察で追究する高温反応プロセス Invited

川西咲子

第1回駒場材料学セミナー　2022/12/28
Na2O–B2O3–SiO2系ガラスへのMoO3の含有限界に及ぼすB2O3/SiO2比の影響

助永壮平, 宇野澤大槻, 千葉裕輝, 田代公則, 川西咲子, 柴田浩幸

第4回放射性廃棄物固化体討論会　2022/10/20
Viscosity of silicate melts containing transition metal cations

Sohei Sukenaga, Issei Takahashi, Kozo Shinoda, Daniel R. Neuville, Sakiko Kawanishi, Hiroyuki Shibata

The 13th Asian Thermophysical Properties Conference ATPC2022　2022/09/28
アルカリケイ酸塩融体の粘度に及ぼすAlO1.5/SiO2比の影響

助永壮平, 生駒諒太, 田代公則, 川西咲子, 柴田浩幸

日本鉄鋼協会第184回秋季講演大会　2022/09/21
蛍光イメージング法によるCaSiO3及びCaMgSi2O6の溶出機構の検討

藤田真由, 川西咲子, 川野潤, 助永壮平, 柴田浩幸

日本鉄鋼協会第184回秋季講演大会学生ポスターセッション　2022/09/22
SiC/C圧粉体へのSiの反応性含浸による高かさ密度SiC作製

五十嵐壮太, 川西咲子, 三谷武志, Didier Chaussende, 吉川健, 柴田浩幸

日本金属学会 2022年秋期第171回講演大会　2022/09/22
SiC飽和条件下での溶液成長によるSiC微結晶由来マクロ欠陥の抑制

三谷武志, 川西咲子, Didier Chaussende, 吉川健

日本金属学会 2022年秋期第171回講演大会　2022/09/22
偏光依存ARPESを用いたSnS価電子帯の電子構造の解析

鈴木一誓, 川西咲子, 田中清尚, 田中慎一郎, 小俣孝久

第83回日本応用物理学会秋季学術講演会　2022/09/21
角度分解光電子分光によるSnS価電子帯の原子軌道の同定

鈴木一誓, 川西咲子, 田中清尚, 田中慎一郎, 小俣孝久

日本セラミックス協会第35回秋季シンポジウム　2022/09/15
Suppression of SiC-inclusions in 4H-SiC crystals grown from Si-Cr-C based solution saturated with SiC

Takeshi Mitani, Sakiko Kawanishi, Kazuma Eto, Tomohisa Kato, Didier Chaussende, Takeshi Yoshikawa

International Conference on Silicon Carbide and Related Materials 2022　2022/09/11
銅製錬スラグの粘度測定

助永壮平, 高橋一誠, 田代公則, 川西咲子, 柴田浩幸

資源・素材2022 (福岡)　2022/09/06
Brドープn型SnSe単結晶の熱電特性

川西咲子, 今里和樹, 太田道広, 柴田浩幸

第19回日本熱電学会学術講演会　2022/08/09
Time-resolved fluorescence imaging of microsegregation and inclusion precipitation during solidification

Sakiko Kawanishi, Shingo Terashima, Sohei Sukenaga, Hiroyuki Shibata

8th International Congress on the Science and Technology of Steelmaking　2022/08/03
顕微鏡を用いた高温反応界面の可視化技術 Invited

川西咲子

R026先端計測技術の将来設計委員会第9回研究会　2022/07/05
Close to energy gap band bending at SnS interface

Issei Suzuki, Binxiang Huang, Sakiko Kawanishi, Takahisa Omata, Andreas Klein

E-MRS 2022 Spring Meeting　2022/06/02
n型SnS単結晶/MoO3接合を用いた太陽電池の高変換効率化

鈴木一誓, リンタクシン, 野上大一, 川西咲子, 小俣孝久

2022年第69回応用物理学会春季学術講演会　2022/03/23
SnS–SnSe固溶体のホール有効質量のARPESによる直接評価

鈴木一誓, リンタクシン, 川西咲子, 田中清尚, 野瀬嘉太郎, 小俣孝久, 田中慎一郎

2022年第69回応用物理学会春季学術講演会　2022/03/25
軟X線発光分光によるSiC結晶中窒素濃度の評価

川西咲子

2022年第69回応用物理学会春季学術講演会　2022/03/25
アルカリ土類鉄ケイ酸塩融体および過冷却液体の粘度

助永壮平, 高橋一誠, 篠田弘造, 川西咲子, 柴田浩幸

日本鉄鋼協会第183回春季講演大会　2022/03/16
蛍光イメージング法によるCaSiO3へのMgO添加によるCa2+溶出抑制のその場解析

藤田真由, 川西咲子, 川野潤, 助永壮平, 柴田浩幸

日本鉄鋼協会第183回春季講演大会　2022/03/16
溶融Si-Cr合金中窒素の熱力学量の評価

川西咲子, 八野田将吾, 助永壮平, 柴田浩幸

日本金属学会 2021年春期第170回講演大会　2022/03/16
n型SnS単結晶/MoO3接合を用いた太陽電池の変換効率の向上

鈴木一誓, リンタクシン, 野上大一, 川西咲子, 小俣孝久

日本セラミックス協会 2022年・年会　2022/03/12
In-situ observation of SO2 gas formation at the magnetite/matte interface at 1200 °C

Seung-Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Junichi Takahashi, Hiroyuki Shibata

TMS2022　2022/03/14
Ca2+ and pH Imaging during Dissolution of CaSiO3 into Aqueous Solution

Sakiko Kawanishi, Hinako Nakayama, Jun Kawano, Takeshi Yoshikawa, Hiroyuki Shibata

TMS 2022　2022/03/14
Na2O-SiO2-B2O3三元系における酸化モリブデンの見かけの溶解度評価

助永壮平, 宇野澤大槻, 田代公則, 川西咲子, 柴田浩幸

第3回放射性廃棄物固化体討論会　2022/01/17
偏光を用いたバンド起源の解明：SnSの角度分解光電子分光

田中慎一郎, 鈴木一誓, 川西咲子, 小俣孝久, 田中清尚

第35回日本放射光学会年会・放射光科学合同シンポジウム　2022/01/09
Calcium Elution Mechanism from Silicate-Based Minerals into Water Invited

SHIBATA Hiroyuki, FANG Ruang, KAWANISHI Sakiko, SUKENAGA Sohei

2021 China Symposium on Sustainable Iron- and Steelmaking Technology　2021/12/15
Thermal Conductivity of Alkali Silicate Glasses and Melts

Sohei Sukenaga, Takahiko Endoh, Tsuyoshi Nishi, Sakiko Kawanishi, Hiromichi Ohta, Hiroyuki Shibata

Asia Steel 2021 (Gyeongju, Korea)　2021/12/08
Thermal conductivity of alkali silicate glasses and melts

Sohei Sukenaga, Takahiko Endoh, Tsuyoshi Nishi, Sakiko Kawanishi, Hiromichi Ohta, Hiroyuki Shibata

ASIA STEEL 2021　2021/12/08
Visualization of micro segregation and formation of inclusions during solidification of a model alloy by fluorescence imaging

Shingo Terashima, Sakiko Kawanishi, Hiroyuki Shibata

IMRAM-Taipei Tech joint symposium　2021/11/30
溶融合金の物性計測とその応用 Invited

川西咲子

日本鉄鋼協会高温物性値フォーラム 2021年度第一回研究会　2021/11/05
SnS 単結晶/MoO3 界面の電子構造と太陽電池への応用

鈴木一誓, 川西咲子, リンタクシン, 小俣孝久, Binxiang Huang, Andreas Klein

第41回電子材料研究討論会　2021/11/04
Step structures of 4H-SiC (000-1) in Si and Si-40mol%Cr solvents at 1873 K after interface reconstruction

Hideto Aoki, Didier Chaussende, Sakiko Kawanishi, Takeshi Mitani, Takeshi Yoshikawa

European Conference on Silicon Carbide and Related Materials 2020-2021　2021/10/26
SiC solution growth using SiC/graphite gradient crucible

Sakiko Kawanishi, Hiroyuki Shibata, Takeshi Yoshikawa

European Conference on Silicon Carbide and Related Materials 2020-2021　2021/10/26
界面再構成法によるSi基合金中4H-SiC (000-1)面の1873 Kにおける初期ステップ構造

青木秀人, Chaussende Didier, 川西咲子, 三谷武志, 吉川健

日本金属学会 2021年秋期(第169回)講演大会　2021/09/16
SiC溶液成長におけるプラントル数の重要性

川西咲子, 阿部舞, 吉川健, 柴田浩幸

日本金属学会 2021年秋期第169回講演大会　2021/09/16
Effect of FeS concentration on SO2 formation at Cu2S-FeS matte/magnetite interface investigated by in-situ observation

Seung Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Junichi Takahashi, Hiroyuki Shibata

2021/09/15
X線吸収分光による酸化物融体中金属の化学状態直接分析

篠田弘造, 川西咲子, 助永壮平

2021年度資源・素材関係学協会合同秋期大会　2021/09/15
ARPESによるSnSの価電子帯の原子軌道の同定

鈴木一誓, 川西咲子, 小俣孝久, 田中慎一郎

第82回日本応用物理学会秋季学術講演会　2021/09/12
n型SnS単結晶/MoO3接合の太陽電池特性

リンタクシン, 鈴木一誓, 川西咲子, 小俣孝久

第82回日本応用物理学会秋季学術講演会　2021/09/10
蛍光イメージング法によるミクロ偏析挙動の可視化

寺島慎吾, 川西咲子, 柴田浩幸

日本鉄鋼協会第182回秋季講演大会　2021/09/03
ARPESによるSnSの価電子帯の電子構造の解明

鈴木一誓, 川西咲子, 小俣孝久, 田中慎一郎

日本セラミックス協会第34回秋季シンポジウム　2021/09/01
大きなバンド屈曲を示すn型SnS/MoO3接合の太陽電池への応用

リンタクシン, 鈴木一誓, 川西咲子, 小俣孝久

日本セラミックス協会第34回秋季シンポジウム　2021/09/01
Solution growth of large single crystals of n-type tin monosulfide

Sakiko Kawanishi, Issei Suzuki, Takahisa Omata, Hiroyuki Shibata

22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22)　2021/08/03
In situ interface observation of solution growth of 4H-SiC at the initial growth stage Invited

Takeshi Yoshikawa, Sakiko Kawanishi

22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22)　2021/08/02
アルカリケイ酸塩ガラスおよび融体の熱伝導度

助永壮平, 遠藤貴彦, 西剛史, 川西咲子, 太田弘道, 柴田浩幸

評価・分析・解析「高温・材料プロセス制御に係る熱物性評価の現状」シンポジウム　2021/05/12
N-Type SnS Thin Films Applicable for Homojunction Solar Cells

Issei Suzuki, Sakiko Kawanishi, Sage Bauers, Andriy Zakutayev, Hiroyuki Shibata, Minesok Kim, Hiroshi Yanagi, Takahisa Omata

2021 Virtual MRS Spring Meeting & Exhibit　2021/04/18
Fabrication of pn homojunction of SnS and its photovoltaic properties

Issei Suzuki, Sakiko Kawanishi, Sage Bauers, Andriy Zakutayev, Hiroyuki Shibata, Hiroshi Yanagi, Takahisa Omata

2021 Virtual MRS Spring Meeting & Exhibit　2021/04/18
フェルミ準位がとりうるエネルギー範囲からみたSnS太陽電池のポテンシャル

鈴木一誓, 川西咲子, Lin Zaxin, Binxiang, 小俣孝久, Huang, Andreas Klein

日本セラミックス協会 2021年年会　2021/03/25
アルカリケイ酸塩ガラスおよび同融体の熱伝導度

助永壮平, 遠藤貴彦, 山田大貴, 江部健太, 西剛史, 脇原徹, 尾原幸治, 川西咲子, 太田弘道, 柴田浩幸

日本鉄鋼協会第181回春季講演大会　2021/03/18
光干渉法を利用した凝固界面近傍での溶質濃度勾配の定量評価

川西咲子, 塩沢優大, 柴田浩幸

日本鉄鋼協会第181回春季講演大会　2021/03/18
AlN成長用Cr-Ni溶媒中窒素の挙動

黒坂真一朗, 川西咲子, 鳴海大翔, 吉川健

日本金属学会 2021年春期第168回講演大会　2021/03/18
アルカリケイ酸塩ガラスおよび動優待の熱伝導度

助永壮平, 遠藤貴彦, 西剛史, 川西咲子, 太田弘道, 柴田浩幸

日本金属学会 2021年春期第168回講演大会　2021/03/18
高温固液界面の3次元形状解析による融体中微量溶解度の測定

川西咲子, 吉川健, Didier Chaussende, 柴田浩幸

日本金属学会 2021年春期第168回講演大会　2021/03/18
SnS 太陽電池におけるVOC > 0.7 Vの可能性:フェルミ準位の制御性の観点から

鈴木一誓, Binxiang Huang, 川西咲子, Lin Zaxin, Andreas Klein, 小俣孝久

2021/03/16
In-situ Observation of Interfacial Phenomena between Magnetite and Matte at High Temperature by a Novel Optical Microscopic Technique

Seunghwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Junichi Takahashi, Hiroyuki Shibata

TMS2021 150th Annual Meeting and Exhibition　2021/03/16
Effects of Atmosphere and Melting Time on Surface Tension of Iron Silicate Melt

Sohei Sukenaga, Sakiko Kawanishi, Masahito Uchikoshi, Shingo Ishihara, Shungo Natsui, Ko-Ichiro Ohno, Noritaka Saito, Kunihiko Nakashima, Masanori Tashiro, Hiroyuki Shibata

Molten 2021, the 11th international conference on Molten Slags, Fluxes and Salts (Online, Korea)　2021/02/23
アルカリケイ酸塩ガラスおよび融体の熱伝導度に及ぼす化学組成および温度の影響

助永壮平, 川西咲子, 柴田浩幸, 遠藤貴彦, 江部健太, 西剛史, 太田弘道, 山田大貴, 尾原幸治, 脇原徹

日本学術振興会製鋼第19委員会令和3年1月期合同研究会　2021/01/25
Evaluation of temperature dependence of bandgap for in-situ discrimination of SiC polytypes

Tomohiro Yamada, Sakiko Kawanishi, Hiroyuki Shibata

IMRAM-Taipei Tech joint symposium　2020/11/30
SnS単結晶の溶液成長におけるハロゲン成分の寄与

川西咲子, 鈴木一誓, 小俣孝久, 柴田浩幸

第49回結晶成長国内会議(JCCG-49)　2020/11/11
Clarification of reaction mechanism between magnetite and Cu2S using in-situ observation

Seunghwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

Tohoku-Melbourne Joint Workshop in Materials Science　2020/11/09
Relationship between the Silicate Skeleton Structure and the Dissolution Kinetics of Calcium-Silicate Mineral Phases into Water

Fang RUAN, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

日本鉄鋼協会第180回秋季講演大会　2020/09/18
蛍光イメージングによるCaSiO3の水溶液への溶出挙動の可視化

中山日菜子, 川西咲子, 川野潤, 柴田浩幸

日本鉄鋼協会第180回秋季講演大会　2020/09
SiCポリタイプのその場判別に向けたバンドギャップの温度特性評価

山田智大, 川西咲子, 柴田浩幸

日本金属学会 2020年秋期(第167回)講演大会　2020/09/15
Investigation of factors for decreasing reaction rate between magnetite and matte by novel in-situ interface observation technique

Seung Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Junichi Takahashi, Hiroyuki Shibata

日本金属学会 2020年秋期(第167回)講演大会　2020/09/15
スパッタリング法によるn 型SnS薄膜の作製

鈴木一誓, 川西咲子, Sage Bauers, Andriy Zakutayev, 柴田浩幸, 柳博, 小俣孝久

第82回日本応用物理学会秋季学術講演会　2020/09/09
pnホモ接合SnSの作製と太陽電池特性

川西咲子, 鈴木一誓, Sage Bauers, Andriy Zakutayev, 柴田浩幸, 柳博, 小俣孝久

第82回日本応用物理学会秋季学術講演会　2020/09/09
鉄濃度の高いケイ酸塩スラグのガラス化

助永壮平, Paolo Mai, 川西咲子, 柴田浩幸

資源・素材学会 2020年度資源・素材関係学協会合同秋期大会　2020/09/08
マグネタイト/マット間界面のその場観察による反応解析

川西咲子, 申勝煥, 助永壮平, 高橋純一, 柴田浩幸

資源・素材学会 2020年度資源・素材関係学協会合同秋期大会　2020/09/08
n型SnS薄膜のスパッタリング法による作製

鈴木一誓, 川西咲子, Bauers Sage, Zakutayev Andriy, 柴田浩幸, Kim Minseok, 柳博, 小俣孝久

資源・素材 2020　2020/09/09
n型SnS薄膜の作製

鈴木一誓, 川西咲子, Bauers Sage, Zakutayev Andriy, 柴田浩幸, Kim Minseok, 柳博, 小俣孝久

日本セラミックス協会第33回秋季シンポジウム　2020/09/03
6H-SiC の周期ステップ構造を利用した3C-SiC の核生成制御

川西咲子, 渡邉遼, 柴田浩幸

日本金属学会 2020年春期(第166回)講演大会　2020/03
Evaluation of interface reaction between magnetite and matte by in-situ observation

Seung Hwan Shin, Sakiko Kawanishi, Sohei Sukenaga, Makoto Ohtsuka, Junichi Takahashi, Hiroyuki Shibata

日本金属学会 2020年春期(第166回)講演大会　2020/03
The Preferential Dissolution Behavior of Calcium into Water from the Calcium-Silicate Mineral Phases

Fang RUAN, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

日本鉄鋼協会第179回春季講演大会　2020/03
Solution growth of SiC crystals: in-situ observation of competition of domains

2020/02/20
Cl-Doped SnS Single Crystal and Its N-Type Conduction International-presentation

Issei Suzuki, Sakiko Kawanishi, Yuki Iguchi, Koichi Sato, Takahisa Omata, Hiroshi Yanagi

2019 MRS Fall Meeting & Exhibit　2019/12/04
Development of In-situ observation system of concentration profiles around solidification interface

Yudai Shiozawa, Sakiko Kawanishi, Hiroyuki Shibata

TAIPEI TECH-IMRAM Symposium　2019/11/26
Growth of Cl-doped n-type SnS Single Crystals and Their Electrical Properties International-presentation

Hiroshi Yanagi, Yuki Iguchi, Koichi Sato, Sakiko Kawanishi, Issei Suzuki

The 5th International Conference on Advanced Electromaterials　2019/11/05
静電浮遊炉におけるCr-Si融体の放射率および比熱の測定

仲田結衣, 渡邊勇基, 小山千尋, 石川毅彦, 川西咲子, 柴田浩幸, 吉川健

日本熱物性学会第40回日本熱物性シンポジウム　2019/10/29
New Methodologies to Evaluate the Step-bunching of 4H-SiC in Different Alloy Solvents International-presentation

Yuchuang Yao, Sakiko Kawanishi, Didier Chaussende, Takumi Horiike, Takeshi Yoshikawa

International Conference on Silicon Carbide and Related Materials 2019　2019/09/30
Effect of thermophysical properties of Si-based solution on SiC solution growth process

Sakiko Kawanishi

Workshop on Innovative Metallurgical Processes for Advanced Materials 2　2019/09/27
鉄ケイ酸塩スラグの還元過程における表面張力変化

助永壮平, 川西咲子, 打越雅仁, 石原真吾, 夏井俊悟, 大野光一郎, 齊藤敬高, 中島邦彦, 柴田浩幸

資源・素材学会 2019年度資源・素材関係学協会合秋期大会　2019/09/24
n型SnS単結晶の電子状態

鈴木一誓, 川西咲子, 井口雄喜, 佐藤孝一, 小俣孝久, 柳博

第80回日本応用物理学会秋季学術講演会　2019/09/19
カルシウムシリケート系鉱物の水へのCa溶出挙動に及ぼす結晶構造の影響

川西咲子, Ruan Fang, 柴田浩幸

日本鉄鋼協会第178回秋季講演大会シンポジウム　2019/09/13
Observation of Surface during Dissolution of Calcium-Silicate Mineral Phases into Water

Fang RUAN, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

日本鉄鋼協会第178回秋季講演大会　2019/09/13
Cr-Si合金を用いたSiC溶液成長時の結晶中窒素濃度

八野田将吾, 川西咲子, 柴田浩幸

日本金属学会 2019年秋期(第165回)講演大会　2019/09/11
濃度場のその場観察システムの開発と凝固現象の速度論評価

塩沢優大, 川西咲子, 柴田浩幸

日本金属学会 2019年秋期(第165回)講演大会　2019/09/11
Cr-Ni溶媒を用いたAlNの溶液成長

中川弥生, 堀池巧, 川西咲子, 吉川健

日本金属学会 2019年春期(第164回)講演大会　2019/03/22
SiC単結晶の溶液成長の冶金学的アプローチ

吉川健, 鳴海大翔, 川西咲子

日本金属学会 2019年春期(第164回)講演大会　2019/03/22
SiC溶液成長時の溶液内熱流動に及ぼす各種物性値の影響

川西咲子, 大黒寛典, 石川毅彦, 阿部舞, 柴田浩幸, 吉川健

日本金属学会 2019年春期(第164回)講演大会　2019/03/22
SiC溶液成長時の成長界面に及ぼすCr-Si合金溶媒の熱伝導率の影響

阿部舞, 川西咲子, 柴田浩幸

日本鉄鋼協会第177回春季講演大会　2019/03/21
溶液成長法による単結晶SiC育成プロセスの研究 Invited

川西咲子

日本鉄鋼協会第177回春季講演大会　2019/03/21
結晶溶解のレーザー干渉その場観察による溶融Al中窒素溶解度の測定

中川弥生, 吉川健, 川西咲子, Didier Chaussende

日本鉄鋼協会第177回春季講演大会　2019/03/20
Effect of Al Addition to Si-Cr Based Solvent for Solution Growth of Single Crystalline SiC International-presentation Invited

Sakiko Kawanishi, Takeshi Yoshikawa, Daikoku Hironori

TMS2019 148th Annual Meeting and Exhibition　2019/03/12
An approach for solubility measurement of SiC in molten silicon and its alloy by real-time interference observation International-presentation Invited

Sakiko Kawanishi, Takeshi Yoshikawa, Didier Chaussende, Hiroyuki Shibata

TMS2019 148th Annual Meeting and Exhibition　2019/03/12
In-situ interface observation of solution growth of 4H-SiC at the initial growth stage from different solvents International-presentation Invited

Takeshi Yoshikawa, Yao Yuchuan, Takumi Horiike, Sakiko Kawanishi

TMS2019 148th Annual Meeting and Exhibition　2019/03/11
SiCの高温溶液成長界面のその場観察” Invited

川西咲子, 吉川健, 柴田浩幸

表面・界面での相転移ダイナミクスに関するその場観察および理論　2019/01/28
高温in-situ観察による固液界面現象の理解 Invited

川西咲子

製鋼部会・産学連携交流会　2018/12/23
Effect of thermal conductivity of solvent on solution growth of SiC International-presentation

Mai Abe, Sakiko Kawanishi, Hiroyuki Shibata

TAIPEI TECH-IMRAM Symposium　2018/12/03
溶融Fe-Si合金の熱伝導率の計測

阿部舞, 川西咲子, 柴田浩幸

第39回日本熱物性シンポジウム　2018/11/13
Effect of Silicate Structure of Calcium-Silicate Based Mineral Phases on Their Elution Behaviors International-presentation

Fang Ruan, Sakiko Kawanishi, Sohei Sukenaga, Hiroyuki Shibata

2018 China Symposium on Sustainable Steelmaking Technology　2018/10/26
溶媒移動法における物質移動現象を利用した1600-2000℃での諸物性値の評価

川西咲子, 柴田浩幸, 吉川健

日本金属学会 2018年秋季(第163回)講演大会　2018/09/19
Ca-Si系鉱物相の水へのカルシウム溶出挙動に及ぼすシリケート構造の影響

阮方, 川西咲子, 助永壮平, 柴田浩幸

日本鉄鋼協会, 第176回秋季講演大会　2018/09/19
Effect of Thermal Conductivity of Solvent on Heat Flow during Solution Growth of SiC International-presentation

Mai Abe, Sakiko Kawanishi, Hiroyuki Shibata

European Conference on Silicon Carbide and Related Materials 2018　2018/09/02
Thermodynamic study on growing single crystal of AlN by solution growth in Cr-Ni solvent International-presentation

Yayoi Nakagawa, Sakiko Kawanishi, Yoshiyuki Yoshitome, Takeshi Yoshikawa

European Conference on Silicon Carbide and Related Materials 2018　2018/09/02
Melt properties of Si-40 mol% Cr solvent and their influence to temperature and flow control in the SiC solution growth International-presentation

S. Kawanishi, H. Daikoku, T. Ishikawa, M. Abe, H. Shibata, T. Yoshikawa

European Conference on Silicon Carbide and Related Materials 2018　2018/09/02
Effect of Al addition to Si-Cr based solvent for growing n-type 2” 4H-SiC by solution growth on concave surface method International-presentation

Hironori Daikoku, Sakiko Kawanishi, Takeshi Yoshikawa

European Conference on Silicon Carbide and Related Materials 2018　2018/09/02
SiC溶液成長時の熱流動に及ぼす溶媒の熱伝導率の影響

阿部舞, 川西咲子, 柴田浩幸

日本鉄鋼協会, 第175回秋季講演大会　2018/03/19
6H-SiC中のらせん転位より生じるスパイラル構造上への3C-SiC核生成制御

渡邊遼, 川西咲子, 柴田浩幸

日本金属学会, 第162回 2018年春季講演大会　2018/03/19
4H-SiCの溶液成長界面に及ぼすAlの影響

大黒寛典, 川西咲子, 吉川健

日本金属学会, 第162回 2018年春季講演大会　2018/03/19
Cr-Si溶媒を用いたSiCの溶液成長挙動に及ぼす炭素過飽和度の影響

永松洋一郎, 川西咲子, 柴田浩幸, 吉川健

第65回日本応用物理学会春季学術講演会　2018/03/17
1873-2273Kでの溶融Cr-Si-CおよびFe-Si-C合金の相互拡散係数

川西咲子, 柴田浩幸, 吉川健

第65回日本応用物理学会春季学術講演会　2018/03/17
Si-40mol%Cr溶媒の融体物性計測ならびにSiCの溶液成長下熱流動予測

大黒寛典, 川西咲子, 石川毅彦, 吉川健

第65回日本応用物理学会春季学術講演会　2018/03/17
Real-time Observation of Solution Growth Interface of SiC Using Alloy Solvent International-presentation Invited

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita

TMS2018　2018/03/11
Cr-Si溶媒を用いたSiC溶液成長挙動に及ぼす過飽和度の影響

永松洋一郎, 川西咲子, 柴田浩幸, 吉川健

第1６回日本金属学会東北支部研究発表大会　2017/11/22
Thermodynamics of Cr in 4H-SiC at 1873 – 2273 K International-presentation

Sakiko Kawanishi, Hiroyuki Shibata, Takeshi Yoshikawa

The International Conference on Silicon Carbide and Related Materials 2017　2017/09/17
Rapid solution growth of AlN using Cr-Ni solvent on c, a, and r faces of sapphire substrates International-presentation

Shinichiro Kurosaka, Kanaparin Ariyawong, Taka Narumi, Sakiko Kawanishi, Takeshi Yoshikawa

The International Conference on Silicon Carbide and Related Materials 2017　2017/09/17
Effect of degree of supersaturation on solution growth of 4H-SiC using Cr-Si solvent International-presentation

Yoichiro Nagamatsu, Sakiko Kawanishi, Hiroyuki Shibata, Takeshi Yoshikawa

The International Conference on Silicon Carbide and Related Materials 2017　2017/09/17
Control of Nucleation of 3C-SiC utilizing Screw Dislocations in 6H-SiC International-presentation

Ryo Watanabe, Sakiko Kawanishi, Hiroyuki Shibata

The International Conference on Silicon Carbide and Related Materials 2017　2017/09/17
In-situ observation on step-bunching and inclusion formation during solution growth of SiC combined with ex-situ analysis International-presentation

Kosuke Fukui, Miki Shiraishi, Sakiko Kawanishi, Takeshi Yoshikawa, Hironori Daikoku, Hiroaki Saito, Kazuhiko Kusunoki

The International Conference on Silicon Carbide and Related Materials 2017　2017/09/17
単結晶SiCの溶液成長の物理化学 Invited

川西咲子

日本金属学会第161回 2017年秋季講演大会　2017/09/06
Dissolution behavior of calcium-silicate based mineral phases into water

RUAN Fang, Sakiko Kawanishi, Hiroyuki Shibata

日本鉄鋼協会第174回秋季講演大会　2017/09/06
6H-SiCのらせん転位を利用した3C-SiC核生成制御

渡邉遼, 川西咲子, 柴田浩幸

日本金属学会第161回 2017年秋季講演大会　2017/09/06
Cr-Si系溶媒の過飽和度が4H-SiCの溶液成長挙動に及ぼす影響

永松洋一郎, 川西咲子, 吉川健, 柴田浩幸

日本金属学会第161回 2017年秋季講演大会　2017/09/06
MgO単結晶と溶融Fe-Al-S合金間界面反応のその場観察

吉川健, 川西咲子

日本鉄鋼協会第174回秋季講演大会　2017/09/06
溶融Si-M (M = Fe, Ni, Fe-Cr)合金中C溶解度の測定

川西咲子, 吉川健

日本鉄鋼協会第173回春季講演大会　2017/03/15
SiCr溶媒に添加したAlのSiC溶液成長界面の影響調査

大黒寛典, 川西咲子, 吉川健

日本金属学会2017年春季(第160回)講演大会　2017/03/15
SiC溶液成長結晶のドーピング制御に向けた4H-SiC中Al, Nの熱力学

川西咲子, 柴田浩幸, 吉川健

第64回日本応用物理学会春季学術講演会春季学術講演会　2017/03/14
凹界面形状成長における4H-SiCの多形安定機構の検討

大黒寛典, 川西咲子, 吉川健

第64回日本応用物理学会春季学術講演会春季学術講演会　2017/03/14
In-situ observation of competition between spiral growth and step-flow growth during solution growth of 4H-SiC International-presentation

Sakiko Kawanishi, Takeshi Yoshikawa

The 11th European Conference on Silicon Carbide and Related Materials 2016　2016/09/25
Effect of N₂ partial pressure on solution growth of AlN using Cr-Ni solvent International-presentation

Shinichiro Kurosaka, Taka Narumi, Hideaki Sasaki, Sakiko Kawanishi, Takeshi Yoshikawa, Masafumi Maeda

The 11th European Conference on Silicon Carbide and Related Materials 2016　2016/09/25
Effect of Al addition in Si-Cr melt by real-time observation of 4H-SiC growth interface International-presentation

Hironori Daikoku, Ssakiko Kawanishi, Takeshi Yoshikawa

The 11th European Conference on Silicon Carbide and Related Materials 2016　2016/09/25
高温界面現象の理解へ向けた界面リアルタイム観察の取り組み

吉川健, 川西咲子

日本鉄鋼協会第172回秋季講演大会　2016/09/21
Cr-Ni溶媒を用いたサファイア上AlN溶液成長結晶の配向性の検討

黒坂信一朗, 鳴海大翔, 川西咲子, 吉川健, 前田正史

日本金属学会2016年秋季講演大会　2016/09/21
固相Si中不純物液相のマイグレーション速度の検討

川西咲子, 松永邦俊, 吉川健, 森田一樹

日本金属学会2016年秋季講演大会　2016/09/21
SiC飽和溶融Si-Cr合金中C溶解度の測定

大黒寛典, 高橋礼奈, 川西咲子, 吉川健

日本鉄鋼協会第171回春季講演大会　2016/03/23
Cr-Ni溶媒を用いたAlNの低温高速溶液成長の基礎検討(その2)ー窒素分圧制御下におけるAlN単結晶成長ー

黒坂真一朗, 川西咲子, 吉留裕貴, 佐々木秀顕, 吉川健, 前田正史

日本金属学会第158回 2016年春季講演大会　2016/03/23
Cr-Ni溶媒を用いたAlNの低温高速溶液成長の基礎検討(その1)ーCr-Ni合金中NおよびAlN溶解度の測定ー

川西咲子, 吉留裕貴, 佐々木秀顕, 吉川健, 前田正史

日本金属学会第158回 2016年春季講演大会　2016/03/23
4H-SiC単結晶の溶液成長に向けたCr溶媒の検討

宮坂遼, 川西咲子, 吉留裕貴, 佐々木秀顕, 吉川健, 前田正史

日本金属学会第158回 2016年春季講演大会　2016/03/23
Cr系溶媒を用いた単結晶SiC溶液成長における炭素過飽和量と成長速度の関係

宮坂遼, 鳴海大翔, 川西咲子, 佐々木秀顕, 吉川健, 前田正史

第63回応用物理学会春季学術講演会　2016/03/19
SiC溶液成長時のスパイラル成長とステップの競合過程のその場観察

川西咲子, 吉川健

第63回応用物理学会春季学術講演会　2016/03/19
Cr-Ni溶媒を用いたAlNの溶液成長におけるサファイア種結晶の結晶面の影響

黒坂真一朗, 鳴海大翔, 川西咲子, 佐々木秀顕, 吉川健, 前田正史

第63回応用物理学会春季学術講演会　2016/03/19
In-situ observation of solution growth interface of SiC from Fe-Si solvent International-presentation Invited

Sakiko Kawanishi, Takeshi Yoshikawa

40th International Conference and Expo on Advanced Ceramics and Composites　2016/01/24

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Industrial Property Rights 6

SiC単結晶製造装置

大黒寛典, 秋田光俊, 山本諒, 吉川健, 川西咲子

Property Type: Patent
SiC単結晶の製造方法

大黒寛典, 加渡幹尚, 吉川健, 川西咲子

Property Type: Patent
SiC単結晶の製造方法

大黒寛典, 吉川健, 川西咲子

Property Type: Patent
炭化ケイ素単結晶の製造方法

吉川健, 田中敏宏, 川西咲子

Property Type: Patent
炭化ケイ素高含有成型品の製造方法、及び、炭化ケイ素高含有成型品を用いた炭化ケイ素単結晶の製造方法

川西咲子, 中山吉之

Property Type: Patent
ｎ型ＳｎＳ薄膜、光電変換素子、太陽光電池、ｎ型ＳｎＳ薄膜の製造方法、およびｎ型ＳｎＳ薄膜の製造装置

鈴木一誓, 川西咲子, 柳博

Property Type: Patent

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Research Projects 20

Gibbs-Thomson溶媒が拓く超速エピタキシーの新展開

吉川健, 三浦均, 川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費助成事業挑戦的研究(開拓)

Category: 挑戦的研究(開拓)

Institution: 東京大学

2022/06/30 - 2025/03/31
偏析蛍光イメージングによる急冷凝固現象の解明

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

Category: Grant-in-Aid for Scientific Research (B)

Institution: Tohoku University

2022/04 - 2025/03
エレクトロマイグレーションの新活用術～高温界面制御への挑戦～

川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費助成事業挑戦的研究(萌芽)

Category: 挑戦的研究(萌芽)

Institution: 東北大学

2021/07 - 2024/03
Properties of steps as key factors to control the interface during crystal growth ; its measurement and thermodynamic model Competitive

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)

Category: Grant-in-Aid for Scientific Research (A)

Institution: The University of Tokyo

2019/04/01 - 2023/03/31
蛍光イメージングによるケイ酸塩鉱物の溶解ダイナミクスの解明

川西咲子, 川野潤

Offer Organization: 豊田理化学研究所

System: 豊田理研スカラー

Institution: 東北大学

2022/04 - 2023/03
pH/イオン濃度分布の可視化が拓く新たな固液界面反応評価

川野潤, 豊福高志, 北垣亮馬, 川西咲子, 荒木優希

Offer Organization: 日本学術振興会

System: 科学研究費助成事業挑戦的研究(萌芽)

Category: 挑戦的研究(萌芽)

Institution: 北海道大学

2021/07 - 2023/03
凝固界面形状・濃度・温度・流れの同時イメージング法の開発

川西咲子

Offer Organization: 日本鉄鋼協会

System: 第30回鉄鋼研究振興助成

2021/04 - 2023/03
Ca・pH同時イメージングによるスラグ構成相の⽔への溶出機構の解明

川西咲子, 柴田浩幸, 川野潤

Offer Organization: JFE21世紀財団

System: 2021年度技術研究助成

Institution: 東北大学

2022/01 - 2022/12
環境調和型次世代太陽電池材料SnSの非平衡欠陥制御と薄膜のn型化 Competitive

柳博, 鈴木一誓, 川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費助成事業基盤研究(B)

Category: 基盤研究(B)

Institution: 山梨大学

2019/04/01 - 2022/03/31
湿潤下その場分光解析によるケイ酸塩物質のハイドレーション・ケミストリーの深化 Competitive

柴田浩幸, 助永壮平, 川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費助成事業基盤研究(B)

Category: 基盤研究(B)

Institution: 東北大学

2019/04/01 - 2022/03/31
次世代薄膜太陽電池材料SnS：ホモ接合実現に向けた固体化学の追究 Competitive

柳博, 川西咲子, 鈴木一誓

Offer Organization: 日本学術振興会

System: 科学研究費助成事業国際共同研究加速基金(国際共同研究強化(B))

Category: 国際共同研究加速基金(国際共同研究強化(B))

Institution: 山梨大学

2018/10/09 - 2022/03/31

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本研究では、バルク焼結体や単結晶において塩素ドープにより実現したSnSのn型化が薄膜で困難な原因について、「Sn2+の孤立電子対が関わる電子欠陥による電荷補償が、非平衡状態が凍結される薄膜中で顕著であるため」との推論を立て、これを解決するために塩素ドープSnS薄膜中に導入される欠陥を同定することを第一の目的としている。次に、ここで同定した欠陥の導入起源の解明をすることによりn型伝導を阻害する孤立電子対起因の欠陥の抑制手法を確立し、SnS薄膜のn型化を実現することを目的とする。これらの目的を達成するために国立再生可能エネルギー研究所（NREL，アメリカ）所有のコンビナトリアルRFマグネトロンスパッタリング製膜装置（塩素添加量やSn/S比、基板温度等の製膜条件を一度に広範囲に制御できる堆積装置）により塩素ドープSnS薄膜を製膜することで欠陥を単離する製膜条件の高速スクリーニングを行う。当該年度は、NRELにて使用予定のコンビナトリアルRFマグネトロンスパッタリング製膜装置ならびにコンビナトリアル評価装置（XRD、XRF、光学スペクトル、電気伝導度など）を現地で見学し、実験方法に関する入念な計画を検討するとともにNRELでの受け入れ研究員との意思統一を図った。これに加え、山梨大学にて現在行っている近接昇華法により製膜したSnS薄膜について東北大学でTOF-SIMSやEPMAによる分析を行った。EPMAでは検出限界に対して有意な塩素を確認することができなかったが、TOF-SIMSにより膜中に塩素が均質に分布していることが明らかとなった。
新しい欠陥エンジニアリング；双晶欠陥ゼロの3C-SiCへの挑戦

川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費助成事業挑戦的研究(萌芽)

Category: 挑戦的研究(萌芽)

Institution: 東北大学

2018/06/29 - 2021/03/31

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3C-SiCは高いチャネル移動度を実現できるため、低損失の中耐圧MOSFETへの応用が期待される。しかし、高品質化が有望視される溶液成長では、デバイスキラー欠陥のDPB(Double positioning boundary)の形成により応用への道は開かれていない。そこで、Si-C対6層周期のステップを種結晶表層に構成させDPBの発生を抑制すべく、6H-SiCに内在する貫通らせん転位を利用した周期ステップ構造を作製し、新しい界面制御法の確立へと展開すべく研究を進めている。 2018年度は、周期ステップ構造に及ぼす6H-SiC基板の面極性の影響を調査した。その結果、C極性面と比較しSi極性面では非常にステップ間隔の小さな周期構造を形成することが確認された。この時のステップ間隔はBCF理論にて説明可能であることがわかり、周期構造の作製時の未飽和度にて整理することができた。次に、得られた周期構造上への3C-SiCの核生成を実施した。Si極性面上にて積層構造の揃った3C-SiCが得られ、狙い通りに下地構造に倣った核生成・成長を達成することができた。一方、C極性面上では3C-SiCの核生成は発生せず、6H-SiCのステップフロー成長が進行することが明らかになった。さらに、核生成の起点を解明すべく実施予定の高温界面のIn-situ界面観察に先立ち、光学系の改造に向けた予備検討を行った。明視野観察による光学系に微分干渉機構を追加し、分解能を更に向上させる方針に決定した。以上、高品質結晶を得るために必須な3C-SiCの積層構造の制御にあたり重要な因子を検討し、下地基板として用いる6H-SiCの面極性の重要性を明らかにするとともに、界面制御法の確立に向けた具体的な方針を決定した。
シリコンカーバイド/金属融体界面のファセット制御と結晶多形決定機構 Competitive

吉川健、三谷武志、川西咲子、Didier Chaussende

Offer Organization: 日本学術振興会

System: 二国間交流事業

2019/04 - 2020/03
4次元in-situ界面観察と熱物性計測によるインクルージョンフリーSiCの実現 Competitive

川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費補助金・若手研究A

2017/04 - 2020/03
Clarification of step structure formation on the solution growth interface of SiC by direct interface observation and molecular dynamics simulation Competitive

Yoshikawa Takeshi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

Category: Grant-in-Aid for Scientific Research (B)

Institution: The University of Tokyo

2015/04/01 - 2018/03/31

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By using the in-situ observation technique of solution growth interface , it was determined that the generation of striated inclusions at SiC growth interface is caused by bunching step forming after the interaction of the edge of spiral hilock with advancing steps. Then, the continuous stable growth of spiral growth at the threading screw dislocation was achieved at the small supersaturation condition, and its usage to derive the relative value of the step energy from its slope structure was demonstrated. The interface growth behavior at the interface of Si-C solution and 3C, 4H, 6H-SiC crystals were studied by molecular dynamics simulation, and the growth behavior on different crystal planes was evaluated. Especially, the growth on 4H-SiC{1-102} shows the continuous stable growth with the rough interface.
100%Cr溶媒を用いた超高速SiC溶液成長 Competitive

川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費補助金・挑戦的萌芽

2016/04 - 2018/03
新奇界面制御法によるDPBフリー3C-SiCの実現 Competitive

川西咲子

Offer Organization: 服部報公会

System: 工学研究奨励援助金

2016/04 - 2017/03
超高品質SiCの実現を目指した溶液成長界面のIn-situ観察と原子分解能解析 Competitive

川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費補助金・特別研究員奨励費

2015/04 - 2016/03
SiC溶液成長界面のIn-situ観察と理論予測に基づく超高品質結晶の育成 Competitive

川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費補助金・若手研究B

2014/04 - 2016/03
Fe-Si合金溶媒を用いたn型、p型SiC単結晶の革新的高速溶液成長法の物理化学 Competitive

川西咲子

Offer Organization: 日本学術振興会

System: 科学研究費補助金・特別研究員奨励費

2011/04 - 2014/03

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Social Activities 2

すぐにわかる「鉄」～知ってる？知らない？身近な材料のよもやまばなし～

知の拠点【すぐわかアカデミア。】

2023/02/17 - Present
鉄〜知ってる？知らない？身近な材料のよもやまばなし〜

片平まつり2021　オンライン開催

2021/10/18 - 2021/10/18

Media Coverage 3

薄膜太陽電池、硫化スズで東北大などカドミウム不要、環境配慮

日本経済新聞

2022/01/16

Type: Newspaper, magazine
硫化スズ太陽電池の高効率化実現東北大が成果

科学新聞

2021/04/02

Type: Newspaper, magazine
クリーンな次世代太陽電池東北大など効率向上に道

日本経済新聞

2021/03/21

Type: Newspaper, magazine