Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction Peer-reviewed

T. V. A. Nguyen, H. Naganuma, H. Honjo, S. Ikeda, T. Endoh

AIP Advances　14　025018-025018　2024/02/01

DOI： 10.1063/9.0000789 　

Memristor State Transition Dynamics for Energy-efficient CiM-driven LLMs in Industrial IoT

Tao Li, Tetsuo Endoh

IEEE Internet of Things Journal　1-1　2024

DOI： 10.1109/jiot.2024.3519511 　

eISSN： 2327-4662 2372-2541

Investigation of the dynamic magnetic properties in RuO2/Co-Fe-B stack film

T. V. A. Nguyen, Y. Saito, H. Naganuma, D. Vu, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics　2024

DOI： 10.1109/TMAG.2024.3404066 　

Field-free spin-orbit torque switching and large dampinglike spin-orbit torque efficiency in synthetic antiferromagnetic systems using interfacial Dzyaloshinskii-Moriya interaction

Yoshiaki Saito, Shoji Ikeda, Nobuki Tezuka, Hirofumi Inoue, Tetsuo Endoh

Physical Review B　108　(2)　2023/07/20

DOI： 10.1103/physrevb.108.024419 　

ISSN： 2469-9950

eISSN： 2469-9969

Erratum: Hybrid Signed Convolution Module With Unsigned Divide-and-Conquer Multiplier for Energy-Efficient STT-MRAM-Based AI Accelerator (IEEE Transactions on Very Large Scale Integration (VLSI) Systems (2023) DOI: 10.1109/TVLSI.2023.3245099)

Tao Li, Yitao Ma, Ko Yoshikawa, Tetsuo Endoh

IEEE Transactions on Very Large Scale Integration (VLSI) Systems　31　(6)　906　2023/06/01

DOI： 10.1109/TVLSI.2023.3264100 　

ISSN： 1063-8210

eISSN： 1557-9999

Enhancement of Damping-Like Spin-Orbit-Torque Efficiency in Synthetic Antiferromagnetic System using Pt-Cu Alloy

Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh

2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)　2023/05

DOI： 10.1109/intermagshortpapers58606.2023.10228766 　

Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-Transfer Torque Magnetic Random Access Memory: A First-Principles Study

Keisuke Morishita, Yosuke Harashima, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi

IEEE Transactions on Magnetics　59　(4)　1-6　2023/02/23

DOI： 10.1109/tmag.2023.3248488 　

ISSN： 0018-9464 1941-0069

Neuromorphic processor-oriented hybrid Q-format multiplication with adaptive quantization for tiny YOLO3 Peer-reviewed

Tao Li, Yitao Ma, Tetsuo Endoh

Neural Computing and Applications　2023/02/13

DOI： 10.1007/s00521-023-08280-y 　

ISSN： 0941-0643

eISSN： 1433-3058

Bridging Artificial Intelligence and Devices: Power Reduction Method of Non-volatile Devices with Error-resilient Deep Neural Networks

Tao Li, Li Zhang, Yitao Ma, Tetsuo Endoh

IEEE Transactions on Magnetics　1-1　2023

DOI： 10.1109/tmag.2023.3321878 　

ISSN： 0018-9464

eISSN： 1941-0069

Charge-to-Spin Conversion Efficiency in Synthetic Antiferromagnetic System using Pt-Cu/Ir/Pt-Cu spacer layers

Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh

IEEE Transactions on Magnetics　1-1　2023

DOI： 10.1109/tmag.2023.3282626 　

ISSN： 0018-9464

eISSN： 1941-0069

Hybrid Signed Convolution Module With Unsigned Divide-and-Conquer Multiplier for Energy-Efficient STT-MRAM-Based AI Accelerator

Tao Li, Yitao Ma, Ko Yoshikawa, Tetsuo Endoh

IEEE Transactions on Very Large Scale Integration (VLSI) Systems　1-5　2023

DOI： 10.1109/tvlsi.2023.3245099 　

ISSN： 1063-8210

eISSN： 1557-9999

Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system Peer-reviewed

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

Applied Physics Express　16　(1)　013002-1-013002-6　2023/01/01

DOI： 10.35848/1882-0786/acb311 　

ISSN： 1882-0778

eISSN： 1882-0786

Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation Peer-reviewed

Hiroshi Naganuma, Hiroaki Honjo, Chikako Kaneta, Koichi Nishioka, Shoji Ikeda, Tetsuo Endoh

AIP Advances　12　125317-1-125317-10　2022/12/21

DOI： 10.1063/5.0112741 　

Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction Peer-reviewed

Yutaro Ogawa, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi

Journal of Applied Physics　132　(21)　213904-213904　2022/12/07

DOI： 10.1063/5.0126570 　

ISSN： 0021-8979

eISSN： 1089-7550

25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 10^7 for eFlash-type MRAM

H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, T. Nasuno, T.Tanigawa, Y. Noguchi, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh

2022/12/03

From Algorithm to Module: Adaptive and Energy-Efficient Quantization Method for Edge Artificial Intelligence in IoT Society Peer-reviewed

Tao Li, Yitao Ma, Tetsuo Endoh

IEEE Transactions on Industrial Informatics　1-13　2022/11/18

DOI： 10.1109/tii.2022.3223222 　

ISSN： 1551-3203

eISSN： 1941-0050

Preparation of RuO2 for spin-orbit torque measurement of RuO2/Co-Fe-B bilayer

T. V. A. Nguyen, S. DuttaGupta, Y. Saito, S. Fukami, D. Vu, H. Naganuma, S. Ikeda, T. Endoh, Y. Endo

2022/10/24

Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM

K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraish

2022 International Conference on Solid State Devices and Materials (SSDM 2022)　2022/09/29

Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer Peer-reviewed

H. Honjo, H. Naganuma, K. Nishioka, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics　58　(8)　1-5　2022/08

DOI： 10.1109/tmag.2022.3151562 　

ISSN： 0018-9464

eISSN： 1941-0069

Energy-Efficient Convolution Module With Flexible Bit-Adjustment Method and ADC Multiplier Architecture for Industrial IoT Peer-reviewed

Tao Li, Yitao Ma, Ko Yoshikawa, Osamu Nomura, Tetsuo Endoh

IEEE Transactions on Industrial Informatics　18　(5)　3055-3065　2022/05

DOI： 10.1109/tii.2021.3106242 　

ISSN： 1551-3203

eISSN： 1941-0050

Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability

K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, T. Tanigawa, S. Ikeda, T. Shinada, H. Koike, T. Endoh, T. Makino, T. Ohshima

2022 IEEE International Reliability Physics Symposium (IRPS)　2022/03/27

DOI： 10.1109/irps48227.2022.9764491 　

Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields Peer-reviewed

T. V. A. Nguyen, Y. Saito, H. Naganuma, S. Ikeda, T. Endoh, Y. Endo

AIP Advances　12　(3)　035133-1-035133-5　2022/03/01

DOI： 10.1063/9.0000297 　

eISSN： 2158-3226

Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer Peer-reviewed

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

Physical Review B　105　(5)　2022/02/22

DOI： 10.1103/physrevb.105.054421 　

ISSN： 2469-9950

eISSN： 2469-9969

Effect of Magnetic Coupling between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer Peer-reviewed

K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V.A. Nguyen, T. Watanabe, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics　58　(2)　2022/02/01

DOI： 10.1109/TMAG.2021.3083575 　

ISSN： 0018-9464

eISSN： 1941-0069

Efficient BCH Code Encoding and Decoding Algorithm with Divisor-Distance-Based Polynomial Division for STT-MRAM Peer-reviewed

Li Zhang, Yitao Ma, Tetsuo Endoh

IEEE Transactions on Magnetics　1-1　2022

DOI： 10.1109/tmag.2022.3142917 　

ISSN： 0018-9464

eISSN： 1941-0069

Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

Materials Science in Semiconductor Processing　134　106046-106046　2021/11

DOI： 10.1016/j.mssp.2021.106046 　

ISSN： 1369-8001

Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin–orbit torque devices

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

Applied Physics Letters　119　(14)　142401-142401　2021/10/04

DOI： 10.1063/5.0063317 　

ISSN： 0003-6951

eISSN： 1077-3118

Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers

Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Tetsuo Endoh

Physical Review B　104　(6)　2021/08/23

DOI： 10.1103/physrevb.104.064439 　

ISSN： 2469-9950

eISSN： 2469-9969

Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm Peer-reviewed

H. Naganuma, S. Miura, H. Honjo, K. Nishioka, T. Watanabe, T. Nasuno, H. Inoue, T. V. A. Nguyen, Y. Endo, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh

Digest of Technical Papers - Symposium on VLSI Technology　2021-June　2021/06

ISSN： 0743-1562

Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

Scripta Materialia　198　113818-113818　2021/06

DOI： 10.1016/j.scriptamat.2021.113818 　

ISSN： 1359-6462

Highly accurate and efficient cluster validation index engine using global separation and local dispersion architecture for adaptive image clustering systems

Hui Shen, Yitao Ma, Tetsuo Endoh

Japanese Journal of Applied Physics　60　2021/05/01

DOI： 10.35848/1347-4065/abdad2 　

ISSN： 1347-4065 0021-4922

Oxidation of Silicon Nanopillars Peer-reviewed

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

The Journal of Physical Chemistry C　125　8853-8861　2021/04/20

DOI： 10.1021/acs.jpcc.1c01514 　

ISSN： 1932-7447

eISSN： 1932-7455

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition

Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

IEEE Journal of Solid-State Circuits　56　(4)　1116-1128　2021/04

DOI： 10.1109/JSSC.2020.3039800 　

ISSN： 0018-9200

eISSN： 1558-173X

40 nm 1T-1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design

Hiroki Koike, Takaho Tanigawa, Toshinari Watanabe, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Toru Yoshiduka, Yitao Ma, Hiroaki Honjo, Koichi Nishioka, Sadahiko Miura, Hirofumi Inoue, Shoji Ikeda, Tetsuo Endoh

IEEE TRANSACTIONS ON MAGNETICS　57　(3)　2021/03

DOI： 10.1109/TMAG.2020.3038110 　

ISSN： 0018-9464

eISSN： 1941-0069

W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer

Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Tetsuo Endoh

AIP Advances　11　(2)　2021/02/01

DOI： 10.1063/9.0000011 　

eISSN： 2158-3226

Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability

K. Nishioka, H. Honjo, H. Naganuma, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

AIP Advances　11　(2)　2021/02/01

DOI： 10.1063/9.0000048 　

eISSN： 2158-3226

Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis

H. Honjo, H. Naganuma, T. V. A. Nguyen, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh

AIP Advances　11　(2)　025211-025211　2021/02/01

DOI： 10.1063/9.0000047 　

eISSN： 2158-3226

Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers

H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics　1-1　2021

DOI： 10.1109/tmag.2021.3078710 　

ISSN： 0018-9464

eISSN： 1941-0069

First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Electron Devices　1-6　2021

DOI： 10.1109/ted.2021.3074103 　

ISSN： 0018-9383

eISSN： 1557-9646

Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

Sadahiko Miura, Koichi Nishioka, Hiroshi Naganuma, T. V.A. Nguyen, Hiroaki Honjo, Shoji Ikeda, Toshinari Watanabe, Hirofumi Inoue, Masaaki Niwa, Takaho Tanigawa, Yasuo Noguchi, Toru Yoshizuka, Mitsuo Yasuhira, Tetsuo Endoh

IEEE Transactions on Electron Devices　67　(12)　5368-5373　2020/12

DOI： 10.1109/TED.2020.3025749 　

ISSN： 0018-9383

eISSN： 1557-9646

FPGA Implementation of Real-Time Pedestrian Detection Using Normalization-Based Validation of Adaptive Features Clustering

Tao Li, Yitao Ma, Hui Shen, Tetsuo Endoh

IEEE Transactions on Vehicular Technology　69　(9)　9330-9341　2020/09

DOI： 10.1109/tvt.2020.2976958 　

ISSN： 0018-9545

eISSN： 1939-9359

Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice

Hiroki KOIKE, Takaho TANIGAWA, Toshinari WATANABE, Takashi NASUNO, Yasuo NOGUCHI, Mitsuo YASUHIRA, Toru YOSHIDUKA, Yitao MA, Hiroaki HONJO, Koichi NISHIOKA, Sadahiko MIURA, Hirofumi INOUE, Shoji IKEDA, Tetsuo ENDOH

2020 IEEE 31st Magnetic Recording Conference (TMRC)　2020/08/17

DOI： 10.1109/tmrc49521.2020.9366711 　

Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface

H. Honjo, M. Niwa, K. Nishioka, T. V. A. Nguyen, H. Naganuma, Y. Endo, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics　56　(8)　1-4　2020/08

DOI： 10.1109/tmag.2020.3004576 　

ISSN： 0018-9464

eISSN： 1941-0069

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh

AIP Advances　2020/07/01

DOI： 10.1063/5.0007499 　

Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance > 10^11 Peer-reviewed

S. Miura, K. Nishioka, H. Naganuma, T. V. A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, T. Endoh

VLSI Symposium　2020/06

Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM Invited Peer-reviewed

VLSI Symposium　2020/06

Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage Peer-reviewed

M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu

VLSI Symposium　2020/06

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming side wall damages in perpendicular magnetized magnetic tunnel junctions Peer-reviewed

Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh

AIP Advanced　2020/06

Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction Peer-reviewed

M. Niwa, H. Honjo, H. Inoue, T. Endoh

Journal of Vacuum Science & Technology B　38　(3)　033801　2020/05

DOI： 10.1116/1.5144850 　

Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system Peer-reviewed

Saito, Y., Tezuka, N., Ikeda, S., Endoh, T.

Applied Physics Letters　116　(13)　132401-1-132401-5　2020/03

DOI： 10.1063/5.0002642 　

A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching Peer-reviewed

Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Endoh

Japanease Journal of Applied Physics　2020/02

Magnetic properties of Co film in Pt/Co/Cr<inf>2</inf>O<inf>3</inf>/Pt structure Peer-reviewed

T. V.A. Nguyen, Y. Shiratsuchi, H. Sato, S. Ikeda, T. Endoh, Y. Endo

AIP Advances　10　(1)　015152-1-015152-5　2020/01/01

DOI： 10.1063/1.5130439 　

eISSN： 2158-3226

Normalization-Based Validity Index of Adaptive K-Means Clustering for Multi-Solution Application

Tao Li, Yitao Ma, Tetsuo Endoh

IEEE Access　8　9403-9419　2020

DOI： 10.1109/access.2020.2964763 　

eISSN： 2169-3536

A Systematic Study of Tiny YOLO3 Inference: Toward Compact Brainware Processor with Less Memory and Logic Gate

Tao Li, Yitao Ma, Tetsuo Endoh

IEEE Access　8　142931-142955　2020

DOI： 10.1109/ACCESS.2020.3013934 　

eISSN： 2169-3536

Structural Analysis of CoFeB/MgO-based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography Peer-reviewed

M. Niwa, K. Kimura, T. Naijo, A. Oshurahunov, S. Nagamachi, H. Inoue, H. Honjo, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics　1-1　2020

DOI： 10.1109/tmag.2020.3008436 　

ISSN： 0018-9464

eISSN： 1941-0069

Oxidation-enhanced Si self-diffusion in isotopically modulated silicon nanopillars Peer-reviewed

Kiga, Ryotaro, Hayashi, Sayaka, Miyamoto, Satoru, Shimizu, Yasuo, Nagai, Yasuyoshi, Endoh, Tetsuo, Itoh, Kohei M.

Journal of Applied Physics　127　(4)　045704/1-045704/6　2020

DOI： 10.1063/1.5134105 　

Spin Hall effect investigated by spin Hall magnetoresistance in Pt100−xAux/CoFeB systems Peer-reviewed

SAITO Yoshiaki

AIP Advances　9　125312-1-125312-5　2019/12

DOI： 10.1063/1.5129889 　

Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers

H. Honjo, T. V. A. Nguyen, M. Yasuhira, M. Niwa, S. Ikeda, H. Sato, T. Endoh

AIP Advances　9　(12)　125330-125330　2019/12/01

DOI： 10.1063/1.5129794 　

eISSN： 2158-3226

First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400℃ thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology Peer-reviewed

H. Honjo, T. V. A. Nguyen, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

International Electron Device Meeting　2019/12

DOI： 10.1109/IEDM19573.2019.8993443 　

First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide Peer-reviewed

Hiroyuki Kageshima, Yuji Yajima, Kenji Shiraishi, Tetsuo Endoh

Japanese Journal of Applied Physics　58　(11)　111004-111004　2019/11/01

DOI： 10.7567/1347-4065/ab4977 　

ISSN： 0021-4922

eISSN： 1347-4065

A novel memory test system with an electromagnet for STT-MRAM testing

R. Tamura, N. Watanabe, H. Koike, H. Sato, S. Ikeda, T. Endoh, S. Sato

NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019　2019/10/01

DOI： 10.1109/NVMTS47818.2019.8986200 　

Variance reduction during the fabrication of sub-20-nm Si cylindrical nanopillars for vertical gate-all-around MOSFETs Peer-reviewed

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

ACS Omega　2019/10

DOI： 10.1021/acsomega.9b02520 　

Low-density oxide grown thermally on sidewall of Si nanopillars Peer-reviewed

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

Materials Letters　2019/10

DOI： 10.1016/j.matlet.2019.126780 　

Effect of surface modification treatment for buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions Peer-reviewed

H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, T. Endoh

Journal of Applied Physics　126　113902　2019/09

DOI： 10.1063/1.5112017 　

Novel Quad Interface MTJ Technology and Its First Demonstration with High Thermal Stability and Switching Efficiency for STT-MRAM Beyond 2Xnm Peer-reviewed

K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, T. Endoh

2019 Symposia on VLSI Technology and Circuits　2019/06

DOI： 10.23919/VLSIT.2019.8776499 　

Oxidation-induced stress in Si nanopillars Peer-reviewed

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

Journal of Materials Science　54　11117-11126　2019/05

DOI： 10.1007/s10853-019-03670-x 　

Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy Peer-reviewed

Masaaki Niwa, Akira Yasui, Eiji Ikenaga, Hiroaki Honjo, Shoji Ikeda, Tetsuya Nakamura, Tetsuo Endoh

Journal of Applied Physics　125　(203903)　2019/05

DOI： 10.1063/1.5094067 　

12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz

Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

Digest of Technical Papers - IEEE International Solid-State Circuits Conference　2019-February　202-204　2019/03/06

DOI： 10.1109/ISSCC.2019.8662431 　

ISSN： 0193-6530

A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications. Peer-reviewed

Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

J. Solid-State Circuits　54　(11)　2991-3004　2019

DOI： 10.1109/JSSC.2019.2930910 　

Edge effect in the oxidation of three-dimensional nano-structured silicon Peer-reviewed

Shujun Ye, Tetsuo Endoh

Materials Science in Semiconductor Processing　93　266-273　2019/01

DOI： 10.1016/j.mssp.2019.01.023 　

Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W <inf>100-x</inf> Ta <inf>x</inf> /CoFeB systems

Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Hideo Sato, Tetsuo Endoh

Applied Physics Express　12　2019/01/01

DOI： 10.7567/1882-0786/ab1a66 　

ISSN： 1882-0778

A Fully Nonvolatile Microcontroller Unit with Embedded STT-MRAM and FPGA-Based Accelerator for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Peer-reviewed

M. Natsui, D. Suzuki, A. Tamakoshi, T. Watanabe, H. Honjo, H. Koike, T. Nasuno, Y. Ma, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu

IEEE Journal of Solid State Circuits　2019

DOI： 10.1109/JSSC.2019.2930910 　

Critical role of sputtering condition for reference layer on magnetic and transport properties of perpendicular-anisotropy magnetic tunnel junction. Peer-reviewed

H. Honjo, H. Sato, S. Ikeda, T. Endoh

IEEE. Transaction on Magnetics　2019/01

DOI： 10.1109/TMAG.2019.2897067 　

Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double CoFeB/MgO Interface Magnetic Tunnel Junctions Peer-reviewed

S.Miura, H.Sato, S.Ikeda, K. Nishioka, H.Honjo, T.Endoh

IEEE. Transaction on Magnetics　2019

DOI： 10.1109/TMAG.2019.2901841 　

14ns write speed 128Mb density Embedded STT-MRAM with endurance>10^10 and 10yrs retention @85°C using novel low damage MTJ integration process Peer-reviewed

H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, S. Ikeda, S.- Y. Kang, T. Kubo, K. Yamashita, Y. Yagi, R. Tamura, T. Endoh

International Electron Devise Meeting　2018/12

DOI： 10.1109/IEDM.2018.8614606 　

A Recent Progress of Spintronics Devices for Integrated Circuit Applications Peer-reviewed

Tetsuo Endoh, Hiroaki Honjo

Journal of Low Power Electronics and Applications　8　(4)　2018/11

DOI： 10.3390/jlpea8040044 　

STEM tomography study on structural features induced by MTJ processingi Peer-reviewed

Masaaki Niwa, Kosuke Kimura, Toshinari Watanabe, Takanori Naijou, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endoh

Applied Physics A　124　(724)　2018/10

DOI： 10.1007/s00339-018-2144-x 　

ISSN： 0947-8396

Erratum: Influence of oxygen concentration of SI wafer surface in SI emission on Nano ordered three-dimensional structure devices (E-Journal of Surface Science and Nanotechnology (2018) 15 (127-134) DOI: 10.1380/ejssnt.2017.127)

Etsuo Fukuda, Tetsuo Endoh, Takashi Ishikawa, Koji Izunome, Kazutaka Kamijo, Moriya Miyashita, Takao Sakamoto, Hiroyuki Kageshima

e-Journal of Surface Science and Nanotechnology　16　375　2018/08/25

DOI： 10.1380/ejssnt.2018.375 　

ISSN： 1348-0391

Model of inter-cell interference phenomenon in 10nm magnetic tunnel junction with perpendicular anisotropy array due to oscillatory stray field from neighboring cells Peer-reviewed

Satoshi Ohuchida, Tetsuo Endoh

Japanese Journal of Applied Physics　57　(6)　2018/06/01

DOI： 10.7567/JJAP.57.063002 　

ISSN： 1347-4065 0021-4922

Reconsideration of Si pillar thermal oxidation mechanism Peer-reviewed

Kageshima Hiroyuki, Shiraishi Kenji, Endoh Tetsuo

JAPANESE JOURNAL OF APPLIED PHYSICS　57　(6)　2018/06

DOI： 10.7567/JJAP.57.06KD02 　

ISSN： 0021-4922

Oxygen concentration dependence of silicon oxide dynamical properties Peer-reviewed

Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo, Kageshima Hiroyuki

JAPANESE JOURNAL OF APPLIED PHYSICS　57　(6)　2018/06

DOI： 10.7567/JJAP.57.06KD01 　

ISSN： 0021-4922

MTJ-based nonvolatile logic LSI for ultra low-power and highly dependable computing Peer-reviewed

Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

China Semiconductor Technology International Conference 2018, CSTIC 2018　1-4　2018/05/29

DOI： 10.1109/CSTIC.2018.8369189 　

1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning Peer-reviewed

Hideo Sato, Toshinari Watanabe, Hiroki Koike, Takashi Saito, Sadahiko Miura, Hiroaki Honjo, Hirofumi Inoue, Shoji Ikeda, Yasuo Noguchi, Takaho Tanigawa, Mitsuo Yasuhira, Hideo Ohno, Song Yun Kang, Takuya Kubo, Koichi Takatsuki, Koji Yamashita, Yasushi Yagi, Ryo Tamura, Takuro Nishimura, Koh Murata, Tetsuo Endoh

2018 IEEE International Memory Workshop (IMW)　2018/05

DOI： 10.1109/imw.2018.8388774 　

Loss analysis and optimum design of a highly efficient and compact CMOS DC-DC converter with novel transistor layout using 60nm multipillar-type vertical body channel MOSFET Peer-reviewed

Kazuki Itoh, Tetsuo Endoh

Japanese Journal of Applied Physics　57　(4)　2018/04/01

DOI： 10.7567/JJAP.57.04FR12 　

ISSN： 1347-4065 0021-4922

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET Peer-reviewed

Taro Sasaki, Tetsuo Endoh

Japanese Journal of Applied Physics　57　(4)　2018/04/01

DOI： 10.7567/JJAP.57.04FN09 　

ISSN： 1347-4065 0021-4922

First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model Peer-reviewed

Nagura Takuya, Kawachi Shingo, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Kageshima Hiroyuki, Endoh Tetsuo, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS　57　(4)　2018/04

DOI： 10.7567/JJAP.57.04FB06 　

ISSN： 0021-4922

Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ Peer-reviewed

Takashi Saito, Kenchi Ito, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endoh

IEEE Transactions on Magnetics　54　(4)　1-1　2018/04/01

DOI： 10.1109/TMAG.2017.2688440 　

ISSN： 0018-9464

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano-Ordered Three-Dimensional Structure Devices Peer-reviewed

Fukuda Etsuo, Endoh Tetsuo, Ishikawa Takashi, Izunome Koji, Kamijo Kazutaka, Miyashita Moriya, Sakamoto Takao, Kageshima Hiroyuki

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY　15　127-134　2017/12/14

DOI： 10.1380/ejssnt.2017.127 　

ISSN： 1348-0391

Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer Peer-reviewed

H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, H. Inoue, M. Muraguchi, M. Niwa, H. Ohno, T. Endoh

IEEE TRANSACTIONS ON MAGNETICS　53　(11)　1-1　2017/11

DOI： 10.1109/TMAG.2017.2701838 　

ISSN： 0018-9464

eISSN： 1941-0069

Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation

Daisuke Kobayashi, Kazuyuki Hirose, Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Shoji Ikeda, Hideo Sato, Eli Christopher Inocencio Enobio, Tetsuo Endoh, Hideo Ohno

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(8)　2017/08

DOI： 10.7567/JJAP.56.0802B4 　

ISSN： 0021-4922

eISSN： 1347-4065

Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm Peer-reviewed

Yuzuru Narita, Yutaka Takahashi, Masahide Harada, Kenichi Oikawa, Daisuke Kobayashi, Kazuyuki Hirose, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(8)　2017/08

DOI： 10.7567/JJAP.56.0802B3 　

ISSN： 0021-4922

eISSN： 1347-4065

High Performance STT-MRAM and 3D NAND Memory with Vertical MOSFET Technology Invited

Tetsuo Endoh

Communications Microsystems Optoelectronics Sensors Emerging Technologies Research 2017 (CMOSETR2017)　2017/05/29

Innovative Integrated Systems for IoT/AI Invited

Tetsuo Endoh

Indiana University-Purdue University Indianapolis Nanotechnology Workshop　2017/05/09

Origin of variation of shift field via annealing at 400 degrees C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer Peer-reviewed

H. Honjo, S. Ikeda, H. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

AIP ADVANCES　7　(5)　055913-1-055913-5　2017/05

DOI： 10.1063/1.4973946 　

ISSN： 2158-3226

Integrated voltage regulators with high-side NMOS power switch and dedicated bootstrap driver using vertical body channel MOSFET under 100 MHz switching frequency for compact system and efficiency enhancement Peer-reviewed

Kazuki Itoh, Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(4)　743-744　2017/04

DOI： 10.7567/JJAP.56.04CF14 　

ISSN： 0021-4922

eISSN： 1347-4065

Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction Peer-reviewed

Masanori Natsui, Akira Tamakoshi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(4)　04CN01-1-04CN01-5　2017/04

DOI： 10.7567/JJAP.56.04CN01 　

ISSN： 0021-4922

eISSN： 1347-4065

A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching Peer-reviewed

Yitao Ma, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(4)　04CF08-1-04CF08-9　2017/04

DOI： 10.7567/JJAP.56.04CF08 　

ISSN： 0021-4922

eISSN： 1347-4065

Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process Peer-reviewed

Junho Jeong, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(4)　04CE09-1-04CE09-5　2017/04

DOI： 10.7567/JJAP.56.04CE09 　

ISSN： 0021-4922

eISSN： 1347-4065

Integrated voltage regulators with high-side NMOS power switch and dedicated bootstrap driver using vertical body channel MOSFET under 100 MHz switching frequency for compact system and efficiency enhancement Peer-reviewed

Kazuki Itoh, Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(4)　04CF14-1-04CF14-7　2017/04

DOI： 10.7567/JJAP.56.04CF14 　

ISSN： 0021-4922

eISSN： 1347-4065

IoT/AIチップの革新的集積システム開発プラットフォーム Invited

遠藤哲郎

CRDSシンポジウム　2017/03/07

Design of a variation-resilient single-ended non-volatile six-input lookup table circuit with a redundant-magnetic tunnel junction-based active load for smart Internet-of-things applications Peer-reviewed

D. Suzuki, M. Natsui, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

ELECTRONICS LETTERS　53　(7)　456-458　2017/03

DOI： 10.1049/el.2016.4233 　

ISSN： 0013-5194

eISSN： 1350-911X

IoT・ビッグデータ社会に向けた新たなメモリ技術と、そのシステム Invited

遠藤哲郎

第４回InfoEver研究会　2017/01/27

Interface control of advanced electronic devices -High-k/metal gate system and magnetic tunneling junction

M. Niwa, S. Sato, T. Endoh

ECS Transactions　80　(1)　133-145　2017

DOI： 10.1149/08001.0133ecst 　

ISSN： 1938-5862 1938-6737

Embedded Nonvolatile Memory with STT-MRAMs and its Application for Nonvolatile Brain-Inspired VLSIs Invited

Tetsuo Endoh

2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)　2017

ISSN： 1930-8868

Embedded Nonvolatile Memory with STT-MRAMs and its Application for Nonvolatile Brain-Inspired VLSIs Invited Peer-reviewed

Tetsuo Endoh

2017 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT)　2017

DOI： 10.1109/VLSI-DAT.2017.7939702 　

ISSN： 2474-2724

IoTに求められる革新的エレクトロニクス技術 ～オープンイノベーション型産学地域連携の重要性 Invited

遠藤哲郎

ものづくりイノベーションセミナー　2016/12/20

STT-MRAM and CMOS/MTJ Hybrid NV-Logic for Future Low Power System Invited

遠藤哲郎

SEMICON Japan 2016　2016/12/16

Beyond MRAM: Nonvolatile Logic-in-Memory VLSI Peer-reviewed

Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno

Introduction to Magnetic Random-Access Memory　199-229　2016/11/26

DOI： 10.1002/9781119079415.ch7 　

Nonvolatile Brain-Inspired VLSIs Based on CMOS/MTJ Hybrid Technology for Ultralow-Power Performance and Compact Chip Invited Peer-reviewed

Tetsuo Endoh

61st Annual Conference on Magnetism and Magnetic Materials (MMM)　2016/11/02

STT-MRAM and MTJ/CMOS Hybrid NV-logic for Low Power Systems Invited

Tetsuo Endoh

EMN LasVegas Meetings　2016/10/12

Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing Peer-reviewed

Takahiro Hanyu, Tetsuo Endoh, Daisuke Suzuki, Hiroki Koike, Yitao Ma, Naoya Onizawa, Masanori Natsui, Shoji Ikeda, Hideo Ohno

PROCEEDINGS OF THE IEEE　104　(10)　1844-1863　2016/10

DOI： 10.1109/JPROC.2016.2574939 　

ISSN： 0018-9219

eISSN： 1558-2256

Study about the Ion Beam Etching (IBE) Process for the High Density Spintronic Devices and its Damage Recovery by the Oxygen Showering Post-treatment (OSP) Peer-reviewed

J.Jeong, T.Endoh

International Conference on Solid State Devices and Materials (SSDM)　B-2-02　75-76　2016/09/26

Highly Reliable MTJ-Based Nonvolatile Logicin-Memory LSI with Content-Aware Write Error Masking Scheme Peer-reviewed

M.Natsui, A.Tamakoshi, T.Endoh, H.Ohno, T.Hanyu

International Conference on Solid State Devices and Materials (SSDM)　B-2-03　77-78　2016/09/26

A Compact and Ultra-Low-Power STT-MRAMBased Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching Peer-reviewed

Y.Ma, S.Miura, H.Honjo, S.Ikeda, T.Hanyu, H.Ohno, T.Endoh

International Conference on Solid State Devices and Materials (SSDM)　B-2-06　83-84　2016/09/26

New Model of Switching Delay Induced by Modulation Effect of Damping and STT Pumping Balance with Programing Current and Interference Phenomena in p-MTJ Array Peer-reviewed

S.Ohuchida, K.Ito, M.Muraguchi, T.Endoh

International Conference on Solid State Devices and Materials (SSDM)　G-3-04　331-332　2016/09/26

(Invited) Silicon Emission Mechanism for Oxidation Process of Non-Planar Silicon Peer-reviewed

H. Kageshima, K. Shiraishi, T. Endoh

ECS Transactions　75　(5)　215-226　2016/09/23

DOI： 10.1149/07505.0215ecst 　

ISSN： 1938-6737

eISSN： 1938-5862

First Principles Study on the Strain Dependence of Thermal Oxidation and Hydrogen Annealing Effect at Si/SiO2 Interface in V-MOSFET Peer-reviewed

K. Shingo, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, K. Shiraishi

ECS Transactions　75　(5)　293-299　2016/09/23

DOI： 10.1149/07505.0293ecst 　

ISSN： 1938-6737

eISSN： 1938-5862

Low Power NV-Working Memory and NV-Logic with Spintronics/CMOS Hybrid ULSI Technology Invited Peer-reviewed

遠藤哲郎

第40回日本磁気学会学術講演会　2016/09/05

Highly Reliable MTJ-Based Motion-Vector Prediction Unit with Dynamic Write Error Masking Scheme Peer-reviewed

Masanori Natsui, Akira Tamakoshi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Proc. of 2016 International Conference on Solid State Devices and Materials　77-78　2016/09

STT-MRAM and MTJ/CMOS Hybrid NV-Logic for Ultra Low Power Systems Invited Peer-reviewed

遠藤哲郎

ナノデバイス科学研究会--第3回実用スピントロニクス新分野創成研究会　2016/08/19

Extension of silicon emission model to silicon pillar oxidation Peer-reviewed

Hiroyuki Kageshima, Kenji Shiraishi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(8)　08PE02-1-08PE02-5　2016/08

DOI： 10.7567/JJAP.55.08PE02 　

ISSN： 0021-4922

eISSN： 1347-4065

Novel current collapse mode induced by source leakage current in AlGaN/GaN high-electron-mobility transistors and its impact Peer-reviewed

Kunihiro Tsubomi, Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(8)　08PD06-1-08PD06-5　2016/08

DOI： 10.7567/JJAP.55.08PD06 　

ISSN： 0021-4922

eISSN： 1347-4065

Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design Peer-reviewed

M. Natsui, A. Tamakoshi, A. Mochizuki, H. Koike, H. Ohno, T. Endoh, T. Hanyu

Proceedings - IEEE International Symposium on Circuits and Systems　2016-　1878-1881　2016/07/29

DOI： 10.1109/ISCAS.2016.7538938 　

ISSN： 0271-4310

CIESコンソーシアムにおける産学連携 Invited Peer-reviewed

遠藤哲郎

シリコン超集積化システム第165委員会第82回研究会　2016/07/22

High Performance STT-MRAM and 3D NAND Memory with Spintronics and Vertical MOSFET Technology Invited Peer-reviewed

遠藤哲郎

SEMICON WEST 2016　2016/07/13

Effect of MTJ resistance fluctuations on synapse stability of MTJ-based nonvolatile neuron circuit for high-speed object recognition Peer-reviewed

Y. Ma, T. Endoh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016)　B5-6　2016/07/05

Novel inductor current to digital converter and its concept evaluation Peer-reviewed

K. Itoh, M. Muraguchi, T. Endoh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016)　B1-5　2016/07/04

Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition Peer-reviewed

H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

IEEE TRANSACTIONS ON MAGNETICS　52　(7)　1-4　2016/07

DOI： 10.1109/TMAG.2016.2518203 　

ISSN： 0018-9464

eISSN： 1941-0069

An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories Invited Peer-reviewed

Tetsuo Endoh, Hiroki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS　6　(2)　109-119　2016/06

DOI： 10.1109/JETCAS.2016.2547704 　

ISSN： 2156-3357

３次元構造技術とスピントロニクス技術による 半導体メモリの新展開 Invited Peer-reviewed

遠藤哲郎

創発物性科学研究センターコロキウム　2016/05/25

適応型リファレンス電圧生成回路を用いた1T1MTJ STT-MRAMセルアレイ設計 Invited Peer-reviewed

小池 洋紀, 三浦 貞彦, 本庄 弘明, 渡辺 俊成, 佐藤 英夫, 佐藤 創志, 那須野 孝, 野口 靖夫, 安平 光雄, 谷川 高穂, 村口 正和, 丹羽 正昭, 伊藤 顕知, 池田 正二, 大野 英男, 遠藤 哲郎

電子情報通信学会技術研究報告　2016/04/14

Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy Peer-reviewed

Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(4)　04EE05-1-04EE05-7　2016/04

DOI： 10.7567/JJAP.55.04EE05 　

ISSN： 0021-4922

eISSN： 1347-4065

A 600-mu W ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme Peer-reviewed

Yitao Ma, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(4)　04EF15-1-04EF15-7　2016/04

DOI： 10.7567/JJAP.55.04EF15 　

ISSN： 0021-4922

eISSN： 1347-4065

Novel High Performance NV-Working Memory with Spintronics and Vertical MOSFET Technology Invited Peer-reviewed

Tetsuo Endoh

2016 MRS Spring Meeting&Exhibit　EP11.1.08　2016/03/28

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor Peer-reviewed

Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa

MICROELECTRONICS RELIABILITY　58　185-191　2016/03

DOI： 10.1016/j.microrel.2015.09.016 　

ISSN： 0026-2714

MTJ based Non-Volatile Microcontroller and its MTJ/CMOS Hybrid Technology Invited Peer-reviewed

Tetsuo Endoh

1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage　2016/01/22

Si/SiO2(100)界面における熱酸化過程、水素アニール効果の 歪み依存性に関する理論的研究

川内伸悟, 白川裕規, 洗平昌晃, 影島愽之, 遠藤哲郎, 白石賢二

電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第21回）　P-28　221-224　2016/01/22

磁気トンネル接合素子のMgO 膜における初期電流リークスポット密度のconductive AFM 法による評価手法解析

佐藤創志, 本庄弘明, 池田正二, 大野英男, 遠藤哲郎, 丹羽正昭

電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第21回）　3-2　31-34　2016/01/22

Poly-Si 電極を用いたSiC MOS キャパシタの絶縁破壊後に見出した特徴的な破壊箇所

佐藤創志, 山部紀久夫, 遠藤哲郎, 丹羽正昭

電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第21回）　7-4　93-96　2016/01/22

スピントロニクスのデバイス応用 Invited Peer-reviewed

遠藤哲郎, 小池洋紀, 池田正二, 羽生貴弘, 大野英男

電子情報通信学会論文誌 C　J99-C　(1)　1-9　2016/01/14

Optimum boron concentration difference between single and double CoFeB/MgO interface perpendicular MTJs with high thermal tolerance and its mechanism Peer-reviewed

H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M.Yasuhira, T.Tanigawa, H.Koike, M.Muraguchi, M.Niwa, K.Ito, H.Ohno, T.Endoh

13th Joint MMM-Intermag Conference　FB-06　2016/01/14

Electric and magnetic improvements of the patterned MTJs by the damage recovery using the novel oxygen showering post-treatment (OSP) process at the argon ion milling etching (AIME) scheme Peer-reviewed

J. Jeong, T. Endoh

13th Joint MMM-Intermag Conference　BT-02　2016/01/14

Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F2 Cell Array Due to Inter-cell Interference Phenomenon Peer-reviewed

S. Ohuchida, M. Murauchi, K. Itoh, T. Endoh

13th Joint MMM-Intermag Conference　GV-01　2016/01/12

シリコンピラー酸化の理論的考察 Invited

影島博之, 白石賢二, 遠藤哲郎

平成27年度静岡大学電子工学研究所共同研究プロジェクト合同研究会　47-48　2016/01/08

Silicon Emission Mechanism for Oxidation Process of Non-Planar Silicon Peer-reviewed

H. Kageshima, K. Shiraishi, T. Endoh

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14　75　(5)　215-226　2016

DOI： 10.1149/07505.0215ecst 　

ISSN： 1938-5862

First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO2 interface in V-MOSFET Peer-reviewed

Kawachi Shingo, Shirakawa Hiroki, Araidai Masaaki, Kageshima Hiroyuki, Endoh Tetsuo, Shiraishi Kenji

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14　75　(5)　293-299　2016

DOI： 10.1149/07505.0293ecst 　

ISSN： 1938-5862

Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip Peer-reviewed

Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Toshinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh

2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW)　1-4　2016

DOI： 10.1109/IMW.2016.7495264 　

ISSN： 2330-7978

Stochastic Behavior-Considered VLSI CAD Environment for MTJ/MOS-Hybrid Microprocessor Design Peer-reviewed

M. Natsui, A. Tamakoshi, A. Mochizuki, H. Koike, H. Ohno, T. Endoh, T. Hanyu

2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)　1878-1881　2016

DOI： 10.1109/ISCAS.2016.7538938 　

ISSN： 0271-4302

Failure analysis of a SiC MOS capacitor with a poly-Si gate electrode Peer-reviewed

Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa

Materials Science Forum　858　485-488　2016

DOI： 10.4028/www.scientific.net/MSF.858.485 　

ISSN： 0255-5476

High Accurate and Low Loss Current Sensing Method with Novel Current Path Narrowing Method for DC-DC Converters and its Demonstration Peer-reviewed

Kazuki Itoh, Masakazu Muraguchi, Tetsuo Endoh

2016 IEEE INTERNATIONAL TELECOMMUNICATIONS ENERGY CONFERENCE (INTELEC)　1-6　2016

DOI： 10.1109/INTLEC.2016.7749132 　

ISSN： 0275-0473

東北大学国際集積エレクトロニクス研究開発センター（CIES） Invited

遠藤哲郎

SEMICON Japan 2015　(1174)　97-101　2015/12/16

ISSN： 0385-1680

国際産学共同研究による革新的省エネルギー集積エレクトロニクスの創出～材料・デバイスから回路・システムまで～ Invited

遠藤哲郎

東北大学イノベーションフェア2015　2015/12/09

IoT社会を支えるパワーデバイス技術と革新的パワーマネージメント技術 Invited

遠藤哲郎

東京フォーラム2015　2015/11/25

High-Density and Low-Power Applications of Spintronics Circuits: 1T1MTJ-MRAM Array Design, and 4T2MTJ-MRAM-based Pattern Recognition Processor Invited Peer-reviewed

H. Koike, Y. Ma, T. Endoh

International Workshop: Spintronics VLSI,　2015/11/21

Novel High Performance NV-Working Memory with Spintronics and Vertical MOSFET Technology Invited Peer-reviewed

T. Endoh

The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications（11th RASEDA)　13-1　2015/11/13

MTJ素子を活用した高性能・高信頼VLSI設計技術 Invited Peer-reviewed

夏井雅典, 鈴木大輔, 池田正二, 遠藤哲郎, 大野英男, 羽生貴弘

応用物理学会スピントロニクス研究会・日本磁気学会スピンエレクトロニクス専門研究会・日本磁気学会ナノマグネティックス専門研究会共同主催研究会　2015/11/12

Extension of Silicon Emission Model for Silicon Pillar Oxidation Peer-reviewed

H. Kageshima, K. Shiraishi, T. Endoh

2015 International Workshop on Dielectric Thin Films for Future Electron Devices Science and Technology(2015IWDTF)　S5-4　99-100　2015/11/04

Novel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs Peer-reviewed

K. Tsubomi, M. Muraguchi, T. Endoh

2015 International Workshop on Dielectric Thin Films for Future Electron Devices Science and Technology(2015IWDTF)　S4-2　83-84　2015/11/03

Driving Force in Diffusion and Redistribution of Reducing Agents During Redox Reaction on the Surface of CoFeB Film Peer-reviewed

S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa

IEEE TRANSACTIONS ON MAGNETICS　51　(11)　1-4　2015/11

DOI： 10.1109/TMAG.2015.2434840 　

ISSN： 0018-9464

eISSN： 1941-0069

STT-MRAM for Nonvolatile Working Memories Invited Peer-reviewed

T. Endoh

The 15th Non-Volatile Memory Technology Symposium (NVMTS2015)　Session 5　2015/10/13

10 nm p-MTJ Array Design for Suppressing Switching Delay Induced by Interference Due to Magnetic Dipole Interaction for High Density STT-MRAM Peer-reviewed

S. Ohuchida, K. Ito, M. Muraguchi, T. Endoh

2015 International Conference on Solid State Devices and Materials(SSDM)　O-5-2　1180-1181　2015/09/30

Universal Damage Recovery Scheme using the Oxygen Showering Post-treatment (OSP) Process for Sub-20nm High Density STT-MRAM Devices Peer-reviewed

J. H. Jeong, T. Endoh

2015 International Conference on Solid State Devices and Materials(SSDM)　O-5-3　1182-1183　2015/09/30

Novel Design of Electrostatic Lens Potential for Improving Bending Curvature and Transmission Probability of Drive Current for Vertical Body Channel MOSFET Peer-reviewed

M.Muraguchi, T. Endoh

2015 International Conference on Solid State Devices and Materials(SSDM)　PS-9-9　342-343　2015/09/30

Optimization of CoFeB Capping Layer Thickness for Characterization of Leakage Spot in MgO Tunneling Barrier of Magnetic Tunnel Junction Peer-reviewed

S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa

2015 International Conference on Solid State Devices and Materials(SSDM)　O-5-4　1184-1185　2015/09/30

First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Peer-reviewed

S. Kawachi, H. Hiroki, M. Araidai, H. Kageshima, T.Endoh, K.Shiraishi

2015 International Conference on Solid State Devices and Materials(SSDM)　PS-1-17　40-41　2015/09/30

A 600-μW Ultra-Low-Power Associative Processor for Image Pattern Recognition Employing Magnetic Tunnel Junction (MTJ) Based Nonvolatile Memories with Novel Intelligent Power-Gating (IPG) Scheme Peer-reviewed

Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Shibata, T. Endoh

2015 International Conference on Solid State Devices and Materials(SSDM)　O-4-2　1172-1173　2015/09/29

次世代集積エレクトロニクス産業の将来と、宮城県における事業化機会の展望 Invited

遠藤哲郎

第一回集積エレクトロニクス技術・事業化検討会　2015/09/24

垂直磁気異方性 CoFeB-MgO 磁気トンネル接合の高速中性子耐性評価(II) Peer-reviewed

成田 克, 高橋 豊, 原田 正英, 大井 元貴, 及川 健一, 小林 大輔, 廣瀬 和之, 石川 慎也, E. C. I. Enobio, 佐藤 英夫, 池田 正二, 遠藤 哲郎, 大野 英男

第76回応用物理学会秋季学術講演会　2015/09/13

科学は社会をどう変革するのか？～トップサイエンスからトップイノベーションへ～ Invited

遠藤哲郎

ACCELシンポジウム　2015/09/12

Novel oxygen showering process (OSP) for extreme damage suppression of sub-20nm high density p-MTJ array without IBE treatment Peer-reviewed

J. H. Jeong, T. Endoh

Digest of Technical Papers - Symposium on VLSI Technology　2015-　T158-T159　2015/08/25

DOI： 10.1109/VLSIT.2015.7223660 　

ISSN： 0743-1562

社会の耐災害性を高めるスピントロニクスによる不揮発性ワーキングメモリ技術とそのシステム応用 Invited

遠藤哲郎

日本磁気学会 第203回研究会　203　49-52　2015/07/24

ISSN： 1882-2940

Switch Toggling Technique of Parallel MOSFET Topology for Power Electronics Circuits with Uniform Thermal Distribution Peer-reviewed

Kazuki Itoh, Masakazu Muraguchi, Tetsuo Endoh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)　4B-3　284-289　2015/06/29

A Novel Neuron Circuit with Nonvolatile Synapses Based on Magnetic-Tunnel-Junction for High-Speed Pattern Learning and Recognition Peer-reviewed

Yitao Ma, Tetsuo Endoh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)　4B-1　273-278　2015/06/29

A High-Speed Pattern Matching Processor Employing Adaptive Nonlinear Similarity Evaluation for Visual-Attention-Based Object Recognition Peer-reviewed

Yitao Ma, Tetsuo Endoh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)　6A-3　326-331　2015/06/29

A Study of Strain Profile in Channel Region of Vertical MOSFET for Improving Drivability Peer-reviewed

Taro Sasaki, Masakazu Muraguchi, Takahiro Shinada, Tetsuo Endoh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)　1A-2　25-29　2015/06/29

シリコン熱酸化膜の水素アニール効果に関する第一原理計算

川 内伸悟, 白 川裕規, 洗 平昌晃, 影 島愽之, 遠 藤哲郎, 白 石賢二

シリコン材料・デバ イス研究会（SDM）　2015/06/24

STT-MRAM for low power systems Invited Peer-reviewed

Tetsuo Endoh

International Symposium on VLSI Technology, Systems, and Applications, Proceedings　2015-　1-2　2015/06/03

DOI： 10.1109/VLSI-TSA.2015.7117581 　

ISSN： 1930-8868

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing (vol 106, 142407, 2015) Peer-reviewed

Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa

APPLIED PHYSICS LETTERS　106　(24)　142407-1-142407-5　2015/06

DOI： 10.1063/1.4922749 　

ISSN： 0003-6951

eISSN： 1077-3118

Creation of innovative integrated electronic technologies through international industry-academic consortium (CIES consortium) : From material/device/process to LSI/system Invited Peer-reviewed

T. Shinada, Y. Ohshima, T. Endoh

11th International Nanotechnology Conference on Communication and Cooperation (INC 11)　I-27　2015/05/12

Improvement of electric and magnetic properties of patterned magnetic tunnel junctions by recovery of damaged layer using oxygen showering post-treatment process Peer-reviewed

J. H. Jeong, T. Endoh

JOURNAL OF APPLIED PHYSICS　117　(17)　17D906-1-17D906-4　2015/05

DOI： 10.1063/1.4908017 　

ISSN： 0021-8979

eISSN： 1089-7550

不揮発ロジックインメモリアーキテクチャとその低電力VLSIシステムへの応用 Invited Peer-reviewed

羽生貴弘, 鈴木大輔, 望月明, 夏井雅典, 鬼沢直哉, 杉林直彦, 池田正二, 遠藤哲郎, 大野英男

集積回路研究会　115　(6)　57-61　2015/04/17

ISSN： 0913-5685

Low Power and High Speed Working Memory with Spintronics and Vertical MOSFET Technology Invited Peer-reviewed

Tetsuo Endoh

COOL Chips XVIII,　SX: Keynote Presentation 4　2015/04/13

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing Peer-reviewed

Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa

APPLIED PHYSICS LETTERS　106　(14)　2015/04

DOI： 10.1063/1.4917277 　

ISSN： 0003-6951

eISSN： 1077-3118

Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60nm CMOS technology on 300mm wafer process Peer-reviewed

Takuya Imamoto, Yitao Ma, Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　2015/04

DOI： 10.7567/JJAP.54.04DC11 　

ISSN： 0021-4922

eISSN： 1347-4065

Study about the damaged mechanism of the patterned perpendicular magnetic tunnel junctions by hydrogen ion treatments Peer-reviewed

Junho Jeong, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DM07-1-04DM07-4　2015/04

DOI： 10.7567/JJAP.54.04DM07 　

ISSN： 0021-4922

eISSN： 1347-4065

Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation Peer-reviewed

Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DE08-1-04DE08-5　2015/04

DOI： 10.7567/JJAP.54.04DE08 　

ISSN： 0021-4922

eISSN： 1347-4065

Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60nm CMOS technology on 300mm wafer process Peer-reviewed

Takuya Imamoto, Yitao Ma, Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DC11-1-04DC11-7　2015/04

DOI： 10.7567/JJAP.54.04DC11 　

ISSN： 0021-4922

eISSN： 1347-4065

High-frequency level-up shifter based on 0.18 mu m vertical metal-oxide-semiconductor field-effect transistors with 70% reduction of overshoot voltage above power supply voltage Peer-reviewed

Satoru Tanoi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DE03-1-04DE03-9　2015/04

DOI： 10.7567/JJAP.54.04DE03 　

ISSN： 0021-4922

eISSN： 1347-4065

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact Peer-reviewed

Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Keiichi Tokutome, Hiroaki Koike, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DM06-1-04DM06-4　2015/04

DOI： 10.7567/JJAP.54.04DM06 　

ISSN： 0021-4922

eISSN： 1347-4065

Impact of sub-volume excitation on improving overdrive delay product of sub-40 nm perpendicular magnetic tunnel junctions in adiabatic regime and its beyond Peer-reviewed

Satoshi Ohuchida, Kenchi Ito, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DD05-1-04DD05-5　2015/04

DOI： 10.7567/JJAP.54.04DD05 　

ISSN： 0021-4922

eISSN： 1347-4065

Landau-Lifshitz-Gilbert micromagnetic simulation on spin transfer torque efficiency of sub-30 nm perpendicular magnetic tunnel junctions with etching damage Peer-reviewed

Kenchi Ito, Satoshi Ohuchida, Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DM01-1-04DM01-5　2015/04

DOI： 10.7567/JJAP.54.04DM01 　

ISSN： 0021-4922

eISSN： 1347-4065

集積エレクトロニクス領域における産学連携拠点の現状とチャレンジ Invited

遠藤哲郎

第62回応用物理学会春季学術講演会　2015/03/12

Future Memory Technology with Vertical MOSFET and STT-MRAM for Ultra Low Power Systems Invited Peer-reviewed

Tetsuo Endoh

KCS (Korean Conference on Semiconductors) 2015　2015/02/11

DOI： 10.1109/VLSI-TSA.2015.7117581 　

新たな産学連携ACCEL開発 Invited

遠藤哲郎

CREST「次世代エレクトロニクスデバイスの創出に資する革新的材料・プロセス研究」領域ワークショップ　2015/02/06

Impact of 3D Structured LSI with VerticalMOSFET for Future Systems Invited

遠藤哲郎

システムナノ技術によるイノベーションへの展開に向けて第1回研究会　2015/02/05

Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction Peer-reviewed

Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

IEEE JOURNAL OF SOLID-STATE CIRCUITS　50　(2)　476-489　2015/02

DOI： 10.1109/JSSC.2014.2362853 　

ISSN： 0018-9200

eISSN： 1558-173X

Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY)　2015

スピントロニクス不揮発性ロジックのパワーゲーティング時における電源ノイズ評価とパッケージへのチップキャパシタ搭載効果の検討 Peer-reviewed

苅谷隆, 田野井聡, 森田治彦, 加藤忍, 遠藤哲郎

電子情報通信学会論文誌 C　J98-C　(1)　8-17　2015/01/01

Diffusion Behaviors Observed on the Surface of CoFeB Film after the Natural Oxidation and the Annealing Peer-reviewed

S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa

2015 IEEE MAGNETICS CONFERENCE (INTERMAG)　GP-01　2015

DOI： 10.1109/INTMAG.2015.7157496 　

1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance Peer-reviewed

Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Tosinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh

2015 IEEE 7TH INTERNATIONAL MEMORY WORKSHOP (IMW)　141-144　2015

DOI： 10.1109/IMW.2015.7150264 　

ISSN： 2330-7978

Nonvolatile Logic and Memory Devices based on Spintronics Invited Peer-reviewed

Tetsuo Endoh

2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)　13-16　2015

DOI： 10.1109/ISCAS.2015.7168558 　

ISSN： 0271-4302

Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

2015 SYMPOSIUM ON VLSI CIRCUITS (VLSI CIRCUITS)　JFS3-2　C172-C173　2015

10 nm phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400 degrees C high thermal tolerance by boron diffusion control Peer-reviewed

H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY)　S12-2　T160-T161　2015

DOI： 10.1109/VLSIT.2015.7223661 　

Effect of Series Resistance on Dielectric Breakdown Phenomenon of Silicon Carbide MOS Capacitor Peer-reviewed

S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh, M. Niwa

PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)　72-75　2015

DOI： 10.1109/IPFA.2015.7224336 　

ISSN： 1946-1550

Challenge of MTJ-Based Nonvolatile Logic-in Memory Architecture for L ltra Low-Power and. Highly Dependable VLSI Computing Peer-reviewed

Takahiro Hanyu, Masanori Natsui, Daisuke Suzuki, Akira Mochizuk, Naoya Onizawa, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno

2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)　PS-1-17　40-41　2015

Challenge of MTJ-Based Nonvolatile Logic-in Memory Architecture for L ltra Low-Power and. Highly Dependable VLSI Computing Peer-reviewed

Takahiro Hanyu, Masanori Natsui, Daisuke Suzuki, Akira Mochizuk, Naoya Onizawa, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno

2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)　1-3　2015

DOI： 10.1109/S3S.2015.7333502 　

磁気ランダムアクセスメモリ（MRAM）の最新技術動向 Invited Peer-reviewed

小池洋紀, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎

CVD研究会　2014/12/18

STT-MRAM, NV-logic with MTJ and high density memory with Vertical MOSFET Invited Peer-reviewed

Tetsuo Endoh

SEMATECH Beyond CMOS Workshop Materials & Technologies for Beyond CMOS　2014/12/14

A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture Peer-reviewed

Hooman Jarollahi, Naoya Onizawa, Vincent Gripon, Noboru Sakimura, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Warren J. Gross

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS　4　(4)　460-474　2014/12

DOI： 10.1109/JETCAS.2014.2361061 　

ISSN： 2156-3357

The dynamic interaction effect due to oscillatory stray field from programing cell in 10nm design p-MTJ array Peer-reviewed

S. Ohuchida, K. Ito, M. Muraguchi, T. Endoh

59th Annual Magnetism & Magnetic Materials Conference(MMM)　FE-10　2014/11/03

Dependence of Sub-Volume Excitation on Structural and Material Parameters in Precessional Regime of Spin Transfer Torque Magnetization Reversal Peer-reviewed

Kenchi Ito, Satoshi Ohuchida, Tetsuo Endoh

IEEE TRANSACTIONS ON MAGNETICS　50　(11)　1402104-1-1402104-4　2014/11

DOI： 10.1109/TMAG.2014.2323964 　

ISSN： 0018-9464

eISSN： 1941-0069

STT-MRAMおよび不揮発性ロジックの現状と将来展望 Invited

遠藤哲郎

第７５回応用物理学会秋季学術講演会　2014/09/18

A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit Peer-reviewed

T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

International Conference on Solid State Dvices and Materails (SSDM)　A-8-3　2014/09/09

Impact of Sub-Volume Excitation for Improving Overdrive Delay Product in Sub-40nm p-MTJ and Its Beyond Peer-reviewed

S. Ohuchida, K. Ito, T. Endoh

International Conference on Solid State Dvices and Materails (SSDM)　A-8-2　2014/09/09

A Power-gated 32bit MPU with a Power Controller Circuit Activated by Deep-sleep-mode Instraction Achieving Ultra-low Power Operation Peer-reviewed

H. Koike, T. Ohsawa, S. Miura, H. Honjo, K, Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

International Conference on Solid State Dvices and Materails (SSDM)　A-7-1　2014/09/09

Study about the Process Damage Mechanism of the Patterned Interface Perpendicular Magnetic Tunnel Junctions (MTJs) by Hydrogen Ion Treatments Peer-reviewed

J.H. Jeong, T. Endoh

International Conference on Solid State Dvices and Materails (SSDM)　A-6-4　2014/09/09

Properties of Perpendicular-Anisotrapy Magnetic Tunnel Junctions Fabricated over the Cu Via Peer-reviewed

S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H, Koike, S. Ikeda, T. Endoh, H. Ohno

International Conference on Solid State Dvices and Materails (SSDM)　A-6-3　2014/09/09

LLG Micromagnetic Simulation on STT Efficiency of sub 30nm Perpendicular MTJs with Etching Damage Peer-reviewed

K. Ito, S. Ohuchida, T. Endoh

International Conference on Solid State Dvices and Materails (SSDM)　PS-12-11　2014/09/09

A High-frequency Level-up Shifter Based on 0.18um Vertical MOSFETs with More than 70% Reduction of Overshoot-voltage Above VDD Peer-reviewed

S. Tanoi, T. Endoh

International Conference on Solid State Dvices and Materails (SSDM)　PS-5-8　2014/09/09

磁気ランダムアクセスメモリ（MRAM）の最新技術動向 Invited

小池洋紀, 大澤隆, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎

電子情報通信学会2014年ソサイエティ大会 エレクトロニクス講演論文集2　CT-1-3　SS-6-9　2014/09/01

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors Peer-reviewed

Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, Masaaki Niwa

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(8)　4-9　2014/08

DOI： 10.7567/JJAP.53.08LA01 　

ISSN： 0021-4922

eISSN： 1347-4065

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions Peer-reviewed

Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanouchi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno

IEEE TRANSACTIONS ON NUCLEAR SCIENCE　61　(4)　1710-1716　2014/08

DOI： 10.1109/TNS.2014.2304738 　

ISSN： 0018-9499

eISSN： 1558-1578

STT-MRAM Technology and Its NV-Logic Applications for Ultimate Power Management Invited Peer-reviewed

Tetsuo Endoh

CMOS Emerging Technologies Research　2014/07/08

Spintronics-based Nonvolatile Computers Invited Peer-reviewed

Tetsuo Endoh

2014 Spintronics Workshop on LSI　2014/06/13

Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions Peer-reviewed

J. H. Jeong, T. Endoh, Y. Kim, W. K. Kim, S. O. Park

JOURNAL OF APPLIED PHYSICS　115　(17)　17C727-1-17C727-3　2014/05

DOI： 10.1063/1.4866395 　

ISSN： 0021-8979

eISSN： 1089-7550

Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal-oxide-semiconductor/magnetic tunnel junction hybrid latches Peer-reviewed

T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

JOURNAL OF APPLIED PHYSICS　115　(17)　17C728-1-17C728-3　2014/05

DOI： 10.1063/1.4867129 　

ISSN： 0021-8979

eISSN： 1089-7550

A High Output Resistance 1.2-V VDD Current Mirror with Deep Submicron Vertical MOSFETs Peer-reviewed

Satoru Tanoi, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E97C　(5)　423-430　2014/05

DOI： 10.1587/transele.E97.C.423 　

ISSN： 1745-1353

A Novel Alternating Voltage Controlled Current Sensing Method for Suppressing Thermal Dependency Peer-reviewed

Kazuki Itoh, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E97C　(5)　431-437　2014/05

DOI： 10.1587/transele.E97.C.431 　

ISSN： 1745-1353

Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, S. Fukami, H. Sato, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

JOURNAL OF APPLIED PHYSICS　115　(17)　17B742-1-17B742-3　2014/05

DOI： 10.1063/1.4868332 　

ISSN： 0021-8979

eISSN： 1089-7550

Embedded STT-MRAM Invited Peer-reviewed

Tetsuo Endoh

1st International Workshop on Data-Abundant System Technology　2014/04/22

全文検索システム向け階層的パワーゲーティングを活用した低エネルギー不揮発TCAMエンジンチップ Peer-reviewed

松永翔雲, 崎村昇, 根橋竜介, 杉林直彦(N, 夏井雅典, 望月明, 遠藤哲郎, 大野英男, 羽生貴弘

信学技報　114　(13)　39-44　2014/04/17

ISSN： 0913-5685

MTJベース不揮発フリップフロップを用いた3μsec-Entry/Exit 遅延時間のマイクロプロセッサ Invited Peer-reviewed

小池洋紀, 崎村昇, 根橋竜介, 辻幸秀, 森岡あゆ香, 三浦貞彦, 本庄弘明, 杉林直彦, 大澤隆, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎

信学技報　114　(13)　85-90　2014/04/17

ISSN： 0913-5685

1.5ns/2.1nsのランダム読出／書込サイクル時間を達成した不揮発性混載メモリ用1Mb STT-MRAM －6T2MTJセルにバックグラウンド書き込み（BGW）方式を適用 Invited Peer-reviewed

大澤隆, 小池洋紀, 三浦貞彦, 木下啓藏, 本庄弘明, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎

信学技報　114　(13)　33-38　2014/04/17

ISSN： 0913-5685

Excellent scalability including self-heating phenomena of vertical-channel field-effect-diode type capacitor-less one transistor dynamic random access memory cell Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　540-541　2014/04

DOI： 10.7567/JJAP.53.04ED05 　

ISSN： 0021-4922

eISSN： 1347-4065

Excellent scalability including self-heating phenomena of vertical-channel field-effect-diode type capacitor-less one transistor dynamic random access memory cell Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04ED05-1-04ED05-8　2014/04

DOI： 10.7567/JJAP.53.04ED05 　

ISSN： 0021-4922

eISSN： 1347-4065

Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories Peer-reviewed

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04ED04-1-04ED04-11　2014/04

DOI： 10.7567/JJAP.53.04ED04 　

ISSN： 0021-4922

eISSN： 1347-4065

A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions Peer-reviewed

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04ED03-1-04ED03-6　2014/04

DOI： 10.7567/JJAP.53.04ED03 　

ISSN： 0021-4922

eISSN： 1347-4065

Size dependence of electrostatic lens effect in vertical MOSFETs Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04EJ09-1-04EJ09-4　2014/04

DOI： 10.7567/JJAP.53.04EJ09 　

ISSN： 0021-4922

eISSN： 1347-4065

Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell Peer-reviewed

Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04ED13-1-04ED13-7　2014/04

DOI： 10.7567/JJAP.53.04ED13 　

ISSN： 0021-4922

eISSN： 1347-4065

Effect with high density nano dot type storage layer structure on 20 nm planar NAND flash memory characteristics Peer-reviewed

Takeshi Sasaki, Masakazu Muraguchi, Moon-Sik Seo, Sung-kye Park, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04ED17-1-04ED17-8　2014/04

DOI： 10.7567/JJAP.53.04ED17 　

ISSN： 0021-4922

eISSN： 1347-4065

Size dependence of electrostatic lens effect in vertical MOSFETs Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　33-36　2014/04

DOI： 10.7567/JJAP.53.04EJ09 　

ISSN： 0021-4922

eISSN： 1347-4065

東北大学国際集積エレクトロニクス研究開発センターの始動と今後の半導体技術の展望 Invited

遠藤哲郎

半導体関連産業ものづくり基盤集積セミナー　2014/03/20

Spintronics-based Nonvolatile Computing Systems Invited Peer-reviewed

Tetsuo Endoh

The 3nd CSIS International Symposium on Spintronics for Integrated Crictuit Applications and Beyond　T4　2014/03/13

STT-MRAM and NV-Logic for Low Power Systems Invited Peer-reviewed

Tetsuo Endoh

SEMICON Korea 2014　2014/02/12

DOI： 10.1109/E3S.2013.6705864 　

集積エレクトロニクスの世界的拠点を目指した国際産学連携研究 Invited

遠藤哲郎

東北大学イノベーションフェア　2014/01/17

A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing Peer-reviewed

Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi

Proceedings - IEEE International Symposium on Circuits and Systems　1588-1591　2014

DOI： 10.1109/ISCAS.2014.6865453 　

ISSN： 0271-4310

Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme Peer-reviewed

Shoun Matsunaga, Akira Mochizuki, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

IEICE ELECTRONICS EXPRESS　11　(3)　20131006　2014

DOI： 10.1587/elex.11.20131006 　

ISSN： 1349-2543

A 90nm 20MHz Fully Nonvolatile Microcontroller for Standby-Power-Critical Applications Peer-reviewed

Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi

2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC)　57　184-+　2014

DOI： 10.1109/ISSCC.2014.6757392 　

ISSN： 0193-6530

Studies on Read-stability and Write-ability of Fast Access STT-MRAMs Peer-reviewed

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)　1-2　2014

DOI： 10.1109/VLSI-TSA.2014.6839665 　

Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme Peer-reviewed

Shoun Matsunaga, Akira Mochizuki, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

IEICE ELECTRONICS EXPRESS　11　(10)　20140297　2014

DOI： 10.1587/elex.11.20140297 　

ISSN： 1349-2543

A Delay Circuit with 4-Terminal Magnetic-Random-Access-Memory Device for Power-Efficient Time-Domain Signal Processing Peer-reviewed

Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi

2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)　1588-1591　2014

DOI： 10.1109/ISCAS.2014.6865453 　

ISSN： 0271-4302

Output Voltage Stability of SPMC Type AC-AC Converter for Power Management in IT System Peer-reviewed

Hiroaki Ohtsuka, Masakazu Muraguchi, Yitao Ma, Tetsuo Endoh

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)　1-2　2014

DOI： 10.1109/IMFEDK.2014.6867096 　

A compact low-power nonvolatile flip-flop using domain-wall-motion-device-based single-ended structure Peer-reviewed

Daisuke Suzuki, Noboru Sakimura, Masanori Natsui, Akira Mochizuki, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

IEICE ELECTRONICS EXPRESS　11　(13)　20140297　2014

DOI： 10.1587/elex.11.20140296 　

ISSN： 1349-2543

Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm Peer-reviewed

S. Ikeda, H. Sato, H. Honjo, E. C. I. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh, H. Ohno

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　796-799　2014

DOI： 10.1109/IEDM.2014.7047160 　

Challenge of MOS/MTJ-Hybrid Nonvolatile Logic-in-Memory Architecture in Dark-Silicon Era Peer-reviewed

Takahiro Hanyu, Daisuke Suzuki, Akira Mochizuki, Masanori Natsui, Naoya Onizawa, Tadahiko Sugibayashi, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　654-656　2014

DOI： 10.1109/IEDM.2014.7047124 　

Is there life beyond conventional CMOS? Invited Peer-reviewed

Tetsuo Endoh

IEEE International Electron Devices Meeting (IEDM)　Panel　2013/12/10

STT-MRAM and its NV-Logic applications for Ultimate Power Management Invited Peer-reviewed

Tetsuo Endoh

SEMATECH-imec workshop “Beyond CMOS”　2013/12/08

Multi-Electron Wave Packets Dynamics under MOSFET-like Potentials Peer-reviewed

Taro Shiokawa, Genki Fujita, Yukihiro Takada, Satoru Konabe, Masakazu Muraguchi, Takahiro Yamamoto, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi

International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)　ThuI-2　2013/12/08

Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale devices Peer-reviewed

G. Fujita, T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai, K. Shiraishi

International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)　PII-4　2013/12/08

Coulomb Interaction on Multi-electron Wave Packet Dynamics in Nanoscale channels Peer-reviewed

T. Shiokawa, G. Fujita, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai, K. Shiraishi

44th IEEE Semiconductor Interface Specialists Conference (SISC)　11.12　2013/12/05

Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

IEICE Electronics Express　10　(23)　20130772-1-20130772-1　2013/11/21

DOI： 10.1587/elex.10.20130772 　

ISSN： 1349-2543

STT-MRAM技術と究極のパワーマネジメントのための不揮発性ロジック応用 Invited Peer-reviewed

遠藤哲郎

京都賞記念ワークショップ　セッションⅠ　2013/11/12

STT-MRAM and NV-Logic for Low Power Systems Invited Peer-reviewed

Tetsuo Endoh

26th International Microprocesses and Nanotechnology Conference (MNC 2013)　6A-1-2 (Plenary)　2013/11/05

Fabrication of a Perpendicular-MTJ-Based Compact Nonvolatile Programmable Switch Using Shared-Write-Control-Transistor Structure Peer-reviewed

D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

The 58th Annual Magnetism and Magnetic Materials Conference (MMM2013)　CD-05　233-233　2013/11/04

Influence of hydrogen patterning gas on eletric and magnetic properties of perpendicular MTJs Peer-reviewed

J. Jeong, Y. Kim, W. Kim, S. Park, T. Endoh

The 58th Annual Magnetism and Magnetic Materials Conference (MMM2013)　BS-07　185-185　2013/11/04

Trend of TMR and Variation in Vth for Keeping Data Load Robustness of MOS/MTJ Hybrid Latches Peer-reviewed

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

The 58th Annual Magnetism and Magnetic Materials Conference (MMM2013)　GT-10　693-693　2013/11/04

MTJ Resistance Distribution of 1-kbit 1T-1MTJ STT-MRAM Cell Arrays Fabricated on a 300-mm Wafer Peer-reviewed

Hiroki Koike, Takashi Ohsawa, Katsuya Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

The 58th Annual Magnetism and Magnetic Materials Conference (MMM2013)　DC-01　324-324　2013/11/04

STT－MRAM and Nonvolatile Logic Invited Peer-reviewed

Tetsuo Endoh

3rd IMEC-Stanford International Workshop on Resistive Memories,　2013/10/17

Spintronics-based integrated circuits and contribution to energy saving society

Hideo Ohno, Takahiro Hanyu, Shoji Ikeda, Tetsuo Endoh, Yasuo Ando, Naoki Kasai

Journal of the Institute of Electronics, Information and Communication Engineers　96　(10)　771-775　2013/10

ISSN： 0913-5693

スピントロニクスを用いた集積回路と省エネ社会への貢献(<特別小特集>東北から明るい未来を創るICT技術) Peer-reviewed

大野 英男, 遠藤 哲郎, 羽生 貴弘, 安藤 康夫, 笠井 直記, 池田 正二

電子情報通信学会誌　96　(10)　771-775　2013/10/01

ISSN： 0913-5693

Dynamical Coulomb Blockade in Multi-Electron Wave Packet Dynamics in Nanostructures Peer-reviewed

G. Fujita, T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai, K. Shiraishi

2013 International Conference on Solid State Devices and Materials (SSDM)　E-2-4　760-761　2013/09/24

Multi-electron Wave Packet Transport Dynamics in Nanoscale Channel Peer-reviewed

T. Shiokawa, G. Fujita, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai, K. Shiraishi

2013 International Conference on Solid State Devices and Materials (SSDM)　D-3-3　718-719　2013/09/24

Demonstration of a Nonvolatile Processor Core Chip with Software-Controlled Three-Terminal MRAM Cells for Standby-Power Critical Applications Peer-reviewed

R. Nebashi, Y. Tsuji, H. Honjo, N. Sakimura, A. Morioka, K. Tokutome, S. Miura, S. Fukami, M. Yamanouchi, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

2013 International Conference on Solid State Devices and Materials (SSDM)　M-8-3　1102-1103　2013/09/24

Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process Peer-reviewed

S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, N. Kasai, S. Ikeda, T. Endoh, H. Ohno

2013 International Conference on Solid State Devices and Materials (SSDM)　PS-12-11　396-397　2013/09/24

Strategy of STT-MRAM Cell Design and Its Power Gating Technique for Low-Voltage and Low-Power Cache Memories Peer-reviewed

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　M-7-1　1090-1091　2013/09/24

Studies on Selective Devices for Spin-Transfer-Torque Magnetic Tunnel Junctions Peer-reviewed

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　M-8-4　1104-1105　2013/09/24

A 4x4 Nonvolatile Multiplier Using Novel MTJ-CMOS Hybrid Latch and Flip-Flop Peer-reviewed

Takashi Ohsawa, Sadahiro Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　M-6-3　1086-1087　2013/09/24

Wide Operational Margin Capability of 1kbit STT-MRAM Array Chip with 1-PMOS and 1-Bottom-Pin-MTJ Type Cell Peer-reviewed

Hiroki Koike, Takashi Ohsawa, Sadahiro Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　M-7-3　1094-1095　2013/09/24

Size Dependence of Electrostatic Lens Effect in Vertical Pillar Type MOSFET Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　E-2-3　758-759　2013/09/24

Layout Design Considering Electro-thermal Properties for CMOS Inverter Composed of Multi-pillar Vertical MOSFET Peer-reviewed

Anyang Wang, Tetsuo Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　PS-3-16　86-87　2013/09/24

Effect with Nano Dot Type Storage Layer Structure on Channel Region in 20nm Planar NAND Flash Memory Cell Peer-reviewed

Takeshi Sasaki, Masakazu Muraguchi, Moon-Sik Seo, Sung-Kye Park, Tetsuo Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　PS-4-5　112-113　2013/09/24

Impact of 3D structured Memory and Spintronics based NV-Memory for High Performance & Low Power Systems Invited Peer-reviewed

Tetsuo Endoh

2013 International Conference on Solid State Devices and Materials (SSDM)　Short Course　2013/09/24

Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111) substrate Peer-reviewed

H. Toyota, A. Okabe, T. Endoh, Y. Jinbo, N. Uchitomi

JOURNAL OF CRYSTAL GROWTH　378　129-133　2013/09

DOI： 10.1016/j.jcrysgro.2012.12.072 　

ISSN： 0022-0248

Spintronics Based NV-Memory/Logic for Low Power Systems Invited Peer-reviewed

Tetsuo Endoh

13th Non-Volatile Memory Technology Symposium (NVMTS)　2013/08/14

３次元構造とスピントロニクスによる半導体メモリの新展開 Invited

遠藤哲郎

第77回半導体集積回路シンポジウム,　2013/07/01

Innovative Si-based integrated electronic systems Invited Peer-reviewed

Tetsuo Endoh

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)　4A-2　155-161　2013/06/26

Impact of Tapered Silicon Channel on the Asymmetric I-V Characteristics of nanoscale Double Gate MOSFETs Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)　211-215　2013/06/26

Analyzing Self-Heating Effect in CMOS Inverter of Vertical MOSFET Peer-reviewed

Anyang Wang, Tetsuo Endoh

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)　166-170　2013/06/26

A Nonlinear Multidimensional-Vector-Adaptive Core Circuit For High-Speed Low-Power Flexible Pattern Matching Peer-reviewed

Yijie Xiong, Yitao Ma, Tetsuo Endoh

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)　293-297　2013/06/26

A Study of Time-Resolved Switching Characteristic in Perpendicular Magnetic Tunnel Junction Peer-reviewed

Satoshi Ohuchida, Tetsuo Endoh

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)　193-198　2013/06/26

A Novel Alternating Voltage Controlled Current Sensing Method for Suppressing Thermal Dependency Peer-reviewed

Kazuki Itoh, Tetsuo Endoh

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)　288-292　2013/06/26

A low voltage operated current mirror for analog designs with deep submicron vertical MOSFETs Peer-reviewed

Satoru Tanoi, Tetsuo Endoh

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)　233-237　2013/06/26

IEEE Journal of Solid-State Circuits Peer-reviewed

T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme　48　(6)　1511-1520　2013/06/22

Fabrication of a 99%-energy-less nonvolatile multi-functional CAM chip using hierarchical power gating for a massively-parallel full-text-search engine Peer-reviewed

Shoun Matsunaga, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Katsuya Miura, Hiroaki Honjo, K. Kinoshita, H. Sato, S. Fukami, M. Natsui, A. Mochizuki, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

2013 Symposium on VLSI Technology (VLSIT) & 2013 Symposium on VLSI Cricuit (VLSIC) Digest of Technical Papers　C106-C107　2013/06/12

Spintronics Based NV-Memory/Logic for High Performance & Low Power Systems Invited Peer-reviewed

Tetsuo Endoh

2013 Symposium on VLSI Technology (VLSIT) & 2013 Symposium on VLSI Cricuit (VLSIC) Digest of Technical Papers　Short Course　2013/06/12

A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories Peer-reviewed

Takashi Ohsawa, Sadahiro Miura, Keizo Kinoshita, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh

2013 Symposium on VLSI Technology (VLSIT) & 2013 Symposium on VLSI Cricuit (VLSIC) Digest of Technical Papers　C110-C111　2013/06/12

A Model Reflecting Preheat Effect by Two-step Writing Technique for High Speed and Stable STT-MRAM Peer-reviewed

Yasuhiro Yoshida, Hiroki Koike, Masakazu Muraguchi, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetuso Endoh

16th International Workshop on Computational Electronics (IWCE)　248-249　2013/06/04

Verification of Simulation Time Improvement for SPICE Simulator Using Built-in MTJ Model Peer-reviewed

Hiroki Koike, Takashi Ohsawa, Tetsuo Endoh

16th International Workshop on Computational Electronics (IWCE)　246-247　2013/06/04

Intrinsic Region Length Dependence of Vertical Double Gate IMOS Peer-reviewed

Akihiro Itagaki, Masakazu Muraguchi, Tetsuo Endoh

16th International Workshop on Computational Electronics (IWCE)　190-191　2013/06/04

Gate Leakage Reduction of Vertical MOSFET with High-k Dielectric Film Employing Gate Dielectric Capacitance Oriented Design Peer-reviewed

Takeshi Sasaki, Tetsuo Endoh

16th International Workshop on Computational Electronics (IWCE)　188-189　2013/06/04

Reduction of Self-Heating Effect in CMOS Inverter of Vertical MOSFET by Common-Gate Layout Peer-reviewed

Anyang Wang, Tetsuo Endoh

16th International Workshop on Computational Electronics (IWCE)　140-141　2013/06/04

Improvement of Self-Heating Effect Employing Vertical-Channel Field-Effect-Diode 1T-DRAM Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

16th International Workshop on Computational Electronics (IWCE)　102-103　2013/06/04

A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme Peer-reviewed

Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

IEEE JOURNAL OF SOLID-STATE CIRCUITS　48　(6)　1511-1520　2013/06

DOI： 10.1109/JSSC.2013.2253412 　

ISSN： 0018-9200

eISSN： 1558-173X

A 1.5nsec/2.1nsec Random Read/Write Cycle 1Mb STT-RAM Using 6T2MTJ Cell with Background Write for Nonvolatile e-Memories Invited Peer-reviewed

Tetsuo Endoh

VLSI Symposium 2013の国内報告会　C9-4　2013/06/01

FOREWORD: Special Section on Fundamentals and Applications of Advanced Semiconductor Devices Invited Peer-reviewed

Tetsuo Endoh

IEICE Transactions on Electronics　E96-C　(5)　619-619　2013/05/01

MRAM/STTRAM/TA-MRAM which ones first? For which applications? Which challenges still on the way? Invited Peer-reviewed

Tetsuo Endoh

International Memory Workshop 2013　2013/05/01

A 3-mW/Gbps 1.8-V Operated Current-Reuse Low-Voltage Differential Signaling Driver Using Vertical Metal-Oxide-Semiconductor Field-Effect Transistors Peer-reviewed

Satoru Tanoi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　52　(4)　04CE03-1-04CE03-7　2013/04

DOI： 10.7567/JJAP.52.04CE03 　

ISSN： 0021-4922

eISSN： 1347-4065

Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures Peer-reviewed

Taro Shiokawa, Genki Fujita, Yukihiro Takada, Satoru Konabe, Masakazu Muraguchi, Takahiro Yamamoto, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi

JAPANESE JOURNAL OF APPLIED PHYSICS　52　(4)　04CJ06-1-04CJ06-4　2013/04

DOI： 10.7567/JJAP.52.04CJ06 　

ISSN： 0021-4922

eISSN： 1347-4065

A multi-pillar vertical metal-oxide-semiconductor field-effect transistor type dynamic random access memory core circuit for sub-1 v core voltage operation without overdrive technique Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

Japanese Journal of Applied Physics　52　(4)　04CE08-1-04CE08-8　2013/04

DOI： 10.7567/JJAP.52.04CE08 　

ISSN： 0021-4922 1347-4065

Novel field effect diode type vertical capacitorless one transistor dynamic random access memory cell with negative hold bit line bias scheme for improving the hold Characteristics Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

Japanese Journal of Applied Physics　52　(4)　04CD08-1-04CD08-5　2013/04

DOI： 10.7567/JJAP.52.04CD08 　

ISSN： 0021-4922 1347-4065

Current Status of NAND Memories and Its Future Prospect with 3D NAND Technology Invited Peer-reviewed

Tetsuo Endoh

MRS Spring Meeting　2013/04/01

4T-2MTJセル構造に基づく不揮発TCAMチップの実現 Peer-reviewed

松永翔雲, 三浦貞彦, 本庄弘明, 木下啓蔵, 池田正二, 遠藤哲郎, 大野英男, 羽生貴弘

信学技報,　113　(1)　33-38　2013/04/01

スピン論理集積回路における基本ゲートの高信頼化技術 Peer-reviewed

辻幸秀, 根橋竜介, 崎村昇, 森岡あゆ香, 本庄弘明, 徳留圭一, 三浦貞彦, 鈴木哲広, 深見俊輔, 木下啓藏, 羽生貴弘, 遠藤哲郎, 笠井直記, 大野英男, 杉林

信学技報,　113　(1)　41-46　2013/04/01

ISSN： 0913-5685

スマート社会におけるメモリソリューションの今後の展望 ～ 新不揮発メモリはSRAM/DRAM/フラッシュを置き換える？ Peer-reviewed

新居浩二, 遠藤哲郎, 加藤佳一, 半澤悟, 梶谷一彦, 川澄篤, 三輪達

信学技報,　113　(1)　53-53　2013/04/01

1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique with 1.0ns/200ps Wake-Up/Power-Off Times Invited Peer-reviewed

Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno

IEICE Technical Reports　113　(1)　27-32　2013/04/01

ISSN： 0913-5685

Restructuring of Memory Hierarchy in Computing System with Spintronics-Based Technologies Invited Peer-reviewed

Tetsuo Endoh

IEICE Technical Reports　113　(1)　21-26　2013/04/01

多電子波束を用いた円電流ダイナミクスへの電子間相互作用の効果

塩川太郎, 藤田弦暉, 高田幸宏, 小鍋哲, 村口正和, 山本貴博, 遠藤哲郎, 初貝安弘, 白石賢二

日本物理学会2013年年次大会　26pXQ-4　2013/03/26

スピン自由度を考慮した多電子波束ダイナミクスにおける電子間相互作用の効果

藤田弦暉, 塩川太郎, 高田幸宏, 小鍋哲, 村口正和, 山本貴博, 遠藤哲郎, 初貝安弘, 白石賢二

日本物理学会2013年年次大会　26pXQ-3　2013/03/26

３次元構造デバイスとスピン/CMOS融合デバイスが切り拓く集積エレクトロニクスの将来 Invited

遠藤哲郎

第８回つくばナノテク拠点シンポジウム　2013/03/06

A Flexible Adaptive Matching Cell Circuit with Bell-Shaped Similarity Evaluation Function for High-Speed Low-Power Nonlinear Pattern Recognition Systems Peer-reviewed

Yijie, Xiong, Yitao, Ma, Tetsuo. Endoh

2013 International Workshop on Nonlinear Circuits, Communications and Signal Processing NCSP'13　624-627　2013/03/04

不揮発性STT-MRAMの開発と今後の展望 Invited

遠藤哲郎, 大澤隆, 伊賀文崇, 池田正二, 羽生貴弘, 大野英男

応用物理学会・特別シンポジウム　2013/03/01

縦型ボディチャネルMOSFETとその集積プロセスの開発 Invited

遠藤哲郎

JST-CREST 「次世代エレクトロニクスデバイスの創出に資する革新材料・プロセス研究」領域 第二回公開シンポジウム　2013/02/08

縦型CMOSデバイスで目指す究極の３次元集積回路 Invited

遠藤哲郎

JST-CREST 「次世代エレクトロニクスデバイスの創出に資する革新材料・プロセス研究」領域 第二回公開シンポジウム　2013/02/08

Two-step writing method for STT-MTJ to improve switching probability and write-speed Peer-reviewed

Fumitaka Iga, Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2013/01/31

A fine-grained power gating architecture for MTJ-based embedded memories Peer-reviewed

Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2013/01/31

A New Sensing Scheme with High Signal Margin Suitable for Spin-Transfer Torque RAM Peer-reviewed

Hiroki Koike, Takashi Ohsawa, Tetsuo Endoh

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2013/01/31

600MHz Nonvolatile Latch Based on a New MTJ/CMOS Hybrid Circuit Concept Peer-reviewed

Tetsuo Endoh, Shuta Togashi, Fumitaka Iga, Yasuhiro Yoshida, Takashi Ohsawa, Hiroki Koike, Shunsuke Fukami, Shoji Ikeda, Naoki Kasai, Noboru Sakimura, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2013/01/31

省エネシステムのためのSTT-MRAMと、そのロジック応用 Invited

遠藤哲郎, 小池洋紀, 大澤隆, 羽生貴弘, 笠井直記, 大野英男

ゲートスタック研究会　2013/01/25

集積エレクトロニクス技術が切り開く省エネ社会 Invited

遠藤哲郎

東北大学イノベーションフェア2013　2013/01/17

グリーンパワー集積システムが拓く賢い省エネ社会 Invited

遠藤 哲郎

東北大学イノベーションフェア2013、　2013/01/17

MRAMの最新動向 Invited

遠藤哲郎, 池田正二, 羽生貴弘, 笠井直記, 大野英男

電子ジャーナル,　2013/01/11

An MTJ-based nonvolatile associative memory architecture with intelligent power-saving scheme for high-speed low-power recognition applications Peer-reviewed

Yitao Ma, Tadashi Shibata, Tetsuo Endoh

Proceedings - IEEE International Symposium on Circuits and Systems　1248-1251　2013

DOI： 10.1109/ISCAS.2013.6572079 　

ISSN： 0271-4310

Effect of Coulomb interaction on multi-electronwave packet dynamics Peer-reviewed

T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi

AIP Conference Proceedings　1566　421-422　2013

DOI： 10.1063/1.4848465 　

ISSN： 1551-7616 0094-243X

Nonvolatile Logic-in-Memory Array Processor in 90nm MTJ/MOS Achieving 75% Leakage Reduction Using Cycle-Based Power Gating Peer-reviewed

Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

2013 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC)　56　194-+　2013

DOI： 10.1109/ISSCC.2013.6487696 　

ISSN： 0193-6530

A high performance current latch sense amplifier with vertical MOSFET Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

IEICE Transactions on Electronics　E96-C　(5)　655-662　2013

DOI： 10.1587/transele.E96.C.655 　

ISSN： 1745-1353 0916-8524

An MTJ-Based Nonvolatile Associative Memory Architecture With Intelligent Power-Saving Scheme for High-Speed Low-Power Recognition Application Peer-reviewed

Yitao Ma, Tadashi Shibata, Tetsuo Endoh

2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)　1248-1251　2013

DOI： 10.1109/ISCAS.2013.6572079 　

ISSN： 0271-4302

A 1-Mb STT-MRAM with Zero-Array Standby Power and 1.5-ns Quick Wake-Up by 8-b Fine-Grained Power Gating Peer-reviewed

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)　80-83　2013

DOI： 10.1109/IMW.2013.6582103 　

Gate Length Scaling of High-k Vertical MOSFET toward 20nm CMOS Technology and beyond Peer-reviewed

Takeshi Sasaki, Tetsuo Endoh

2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)　121-122　2013

DOI： 10.1109/S3S.2013.6716557 　

Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013　140-141　2013

DOI： 10.1109/S3S.2013.6716574 　

STT-MRAM and NV-Logic for low power systems Invited Peer-reviewed

Tetsuo Endoh

2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings　1-2　2013

DOI： 10.1109/E3S.2013.6705864 　

A Power-Gated MPU with 3-microsecond Entry/Exit Delay using MTJ-Based Nonvolatile Flip-Flop Peer-reviewed

H. Koike, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, S. Miura, H. Honjo, T. Sugibayashi

PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)　317-320　2013

DOI： 10.1109/ASSCC.2013.6691046 　

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions Peer-reviewed

Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanocuhi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno

JOURNAL OF LATEX CLASS FILES　11　(4)　1-3　2012/12/01

Current Status of NAND Memories and its Future Prospect with 3D NAND Technology Invited Peer-reviewed

Tetsuo Endoh

ECS Prime 2012　2012/10/10

MTJ Based Non-volatile RAM and Logic for Future System with Standby Power Zero Invited Peer-reviewed

Tetsuo Endoh

9th Sematech International Symposium on Advanced Gate Stack Technology　2012/10/04

A DRAM Sense Amplifier Circuit by Multi-pillar Vertical MOSFET Realizing Sub-1V Core Voltage Operation without Overdrive Technique Peer-reviewed

H. Na, T. Endoh

2012 International Conference on Solid State Devices and Materials (2012 SSDM)　J-5-4　1148-1149　2012/09/25

Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

2012 International Conference on Solid State Devices and Materials　B1-2　588-589　2012/09/25

A 3-mW/Gbps 1.8-V Current-reuse LVDS Driver with 30% Power Reduction using Vertical MOSFETs Peer-reviewed

Satoru Tanoi, Tetsuo Endoh

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials　152-153　2012/09/01

ナノ構造中の多電子波束ダイナミクスにおける電子間相互作用の効果 Peer-reviewed

藤田弦暉, 塩川太郎, 高田幸宏, 小鍋哲, 村口正和, 山本貴博, 遠藤哲郎, 初貝安弘, 白石賢二

日本物理学会2013年年次大会　21aFB-9　2012/09/01

一次元非一様ポテンシャル中の波束ダイナミクス Peer-reviewed

塩川太郎, 藤田弦暉, 高田幸宏, 小鍋哲, 村口正和, 山本貴博, 遠藤哲郎, 初貝安弘, 白石賢二

日本物理学会2013年年次大会　21aFB-10　2012/09/01

The Effect of Coulomb Interaction in Multi-Electron Wave Packet Dynamics Peer-reviewed

Taro Shiokawa, Yukihiro Takada, Young Taek Yoon, Satoru Konabe, Masakazu Muraguchi, Mitsuhiro Arikawa, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi

31st International Conference on the Physics of Semiconductors (ICPS2012)　67.32　295-295　2012/08/02

Novel Concept of the Three-Dimensional Vertical FG NAND Flash Memory Using the Separated-Sidewall Control Gate Peer-reviewed

Moon-Sik Seo, Bong-Hoon Lee, Sung-Kye Park, Tetsuo Endoh

IEEE TRANSACTIONS ON ELECTRON DEVICES　59　(8)　2078-2084　2012/08

DOI： 10.1109/TED.2012.2200682 　

ISSN： 0018-9383

Effectiveness of Time-Dependent Hartree-Fock Approaches for Multi-Electron Wave Packet Dynamics in Nanoscale Structures Peer-reviewed

Yukihiro Takada, Young Taek Yoon, Taro Shiokawa, Satoru Konabe, Mitsuhiro Arikawa, Masakazu Muraguchi, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi

31st International Conference on the Physics of Semiconductors (ICPS2012)　67.32　295-295　2012/07/31

Effectiveness of Time-Dependent Hartree-Fock Approaches for Multi-Electron Wave Packet Dynamics in Nanoscale Structures Peer-reviewed

Yukihiro Takada, Young Taek Yoon, Taro Shiokawa, Satoru Konabe, Mitsuhiro Arikawa, Masakazu Muraguchi, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi

ICPS2012　37　(14)　2012/07/29

Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position Peer-reviewed

Masahiro Hori, Keigo Taira, Akira Komatsubara, Kuninori Kumagai, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Takahiro Shinada

APPLIED PHYSICS LETTERS　101　(1)　2012/07

DOI： 10.1063/1.4733289 　

ISSN： 0003-6951

The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)　2A.2　38-42　2012/06/27

A High Performance SRAM Sense Amplifier with Vertical MOSFET Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)　2A.3　43-47　2012/06/27

A High Performance SRAM Sense Amplifier with Vertical MOSFET Peer-reviewed

H. Na, T. Endoh

2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2012 AWAD)　2A-3　43-47　2012/06/27

MTJ Based Non-volatile RAM and Low Power Non-volatile Logic Suitable to Pipeline Architecture Invited Peer-reviewed

T. Endoh

The 8th Annual SEMATECH Symposium Japan 2012　Session 2　5-5　2012/06/26

MTJ based Non Volatile Logic for Ultimate Power Management Invited Peer-reviewed

Tetsuo Endoh, Takashi Ohsawa, Takahiro Hanyu, Hideo Ohno

the 19th International Conference on Magnetism with Strongly Correlated Electron Systems (ICM2012 with SCES)　Session BI02　5-7　2012/06/26

Restructuring of Memory Hierarchy in System and No-Standby-Power Nonvolatile Logic with STT-MRAM Technology Invited Peer-reviewed

T. Endoh

IMEC Seminar 2012　Session Ⅱ　4-4　2012/06/21

Restructuring of Memory Hierarchy in Computing System with STT-MRAM Technologies Invited Peer-reviewed

Tetsuo Endoh

2012 Spintronics Workshop on LSI　14-14　2012/06/11

Restructuring of Memory Hierarchy in System and No-Standby-Power Nonvolatile Logic with STT-MRAM Technology Invited Peer-reviewed

T. Endoh

14th Leti （Laboratoire d'électronique des technologies de l'information）Annual Review　A　1-1　2012/06/11

Long-Range Asynchronous On-Chip Link Based on Multiple-Valued Single-Track Signaling Peer-reviewed

Naoya Onizawa, Atsushi Matsumoto, Takahiro Hanyu

IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES　E95A　(6)　1018-1029　2012/06

DOI： 10.1587/transfun.E95.A.1018 　

ISSN： 1745-1337

MTJ based non volatile SRAM and low power non volatile logic-in-memory architecture Invited Peer-reviewed

Tetsuo Endoh

The 2012 International Meeting for future Electron Devices, Kansai (IMFEDK 2012)　2　2012/05/09

MTJ based non volatile SRAM and low power non volatile logic-in-memory architecture Invited Peer-reviewed

Tetsuo Endoh, Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Naoki Kasai, Hideo Ohno

IEEE International Magnetics Conference (INTERMAG2012)　HB-06-HB-06　2012/05/09

Applied Electric Field Dependence of Multi-Electron Wave Packet Dynamics Peer-reviewed

Taro Shiokawa, Yukihiro Takada, Young Taek Yoon, Satoru Konabe, Masakazu Muraguchi, Mitsuhiro Arikawa, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi

The 8th International Nanotechnology Conference on Communication and Cooperation (ICN8)　Tu114　Tu114-Tu114　2012/05/08

A Schmitt Trigger Based SRAM with Vertical MOSFET Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E95C　(5)　792-801　2012/05

DOI： 10.1587/transele.E95.C.792 　

ISSN： 0916-8524

eISSN： 1745-1353

Source/Drain Engineering for High Performance Vertical MOSFET Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E95C　(5)　807-813　2012/05

DOI： 10.1587/transele.E95.C.807 　

ISSN： 0916-8524

eISSN： 1745-1353

Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E95C　(5)　847-853　2012/05

DOI： 10.1587/transele.E95.C.847 　

ISSN： 1745-1353

Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating Peer-reviewed

Shuta Togashi, Takashi Ohsawa, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E95C　(5)　854-859　2012/05

DOI： 10.1587/transele.E95.C.854 　

ISSN： 0916-8524

eISSN： 1745-1353

FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG) Peer-reviewed

Moon-Sik Seo, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E95C　(5)　891-897　2012/05

DOI： 10.1587/transele.E95.C.891 　

ISSN： 0916-8524

eISSN： 1745-1353

A fine-grained power gating architecture for MTJ-based embedded memories Peer-reviewed

T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Tokutome, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2012/05/01

600MHz Nonvolatile Latch Based on a New MTJ/CMOS Hybrid Circuit Concept Peer-reviewed

T. Endoh, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2012/05/01

A Wide-Range Tunable Level-Keeper Using Vertical Metal-Oxide-Semiconductor Field-Effect Transistors for Current-Reuse Systems Peer-reviewed

Satoru Tanoi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(4)　04DE11-1-04DE11-7　2012/04

DOI： 10.1143/JJAP.51.04DE11 　

ISSN： 0021-4922

Design of a compact nonvolatile four-input logic element using a magnetic tunnel junction and metal-oxide-semiconductor hybrid structure Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Japanese Journal of Applied Physics　51　(4)　02DM02-1-02DM02-5　2012/04

DOI： 10.1143/JJAP.51.04DM02 　

ISSN： 0021-4922 1347-4065

Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions Peer-reviewed

D. Suzuki, M. Natsui, T. Endoh, H. Ohno, T. Hanyu

JOURNAL OF APPLIED PHYSICS　111　(7)　07E318-1-07E318-3　2012/04

DOI： 10.1063/1.3672411 　

ISSN： 0021-8979

eISSN： 1089-7550

Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory Peer-reviewed

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

JOURNAL OF APPLIED PHYSICS　111　(7)　07E336-1-07E336-3　2012/04

DOI： 10.1063/1.3677875 　

ISSN： 0021-8979

eISSN： 1089-7550

Wave Packet Dynamics in the Spin Torque Transfer Peer-reviewed

Mitsuhiro Arikawa, Yasuhiro Hatsugai, Tetsuo Endoh, Kenji Shiraishi

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　81　(4)　044706-1-044706-4　2012/04

DOI： 10.1143/JPSJ.81.044706 　

ISSN： 0031-9015

Current Controlled MOS Current Mode Logic with Auto-Detection of Threshold Voltage Fluctuation Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E95C　(4)　617-626　2012/04

DOI： 10.1587/transele.E95.C.617 　

ISSN： 0916-8524

eISSN： 1745-1353

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal-Oxide-Semiconductor Hybrid Structure Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(4)　04DM02-1-04DM02-5　2012/04

DOI： 10.1143/JJAP.51.04DM02 　

ISSN： 0021-4922

eISSN： 1347-4065

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal-Oxide-Semiconductor Hybrid Structure Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(4)　04DM02-04DM06　2012/04

DOI： 10.1143/JJAP.51.04DM02 　

ISSN： 0021-4922

eISSN： 1347-4065

3端子磁壁移動型セルを用いた不揮発性コンテントアドレッサブルメモリ Peer-reviewed

根橋竜介, 崎村昇, 辻幸秀, 深見俊輔, 本庄弘明, 齊藤信作, 三浦貞彦, 石綿延行, 木下啓蔵, 羽生貴弘, 遠藤哲郎, 笠井直記, 大野英男, 杉林直彦

信学技報　112　(15)　49-54　2012/04/01

ISSN： 0913-5685

Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions Peer-reviewed

D. Suzuki, M. Natsui, T. Endoh, H. Ohno, T. Hanyu

JOURNAL OF APPLIED PHYSICS　111　(7)　07E318-07E318　2012/04

DOI： 10.1063/1.3672411 　

ISSN： 0021-8979

eISSN： 1089-7550

Restructuring of Memory Hierarchy in Electrical System and No-Standby-Power Nonvolatile Logic with STT-RAM Technology Invited Peer-reviewed

Tetsuo Endoh

The 2nd CSIS International Symposium on Spintronics-based VLSIs　F1　18-18　2012/02/02

Proposal of New MTJ-Based Nonvolatile Memories Invited Peer-reviewed

T. Ohsawa, H. Koike, T. Hanyu, S. Ikeda, H. Ohno, T. Endoh

The 2nd CSIS International Symposium on Spintronics-based VLSIs　F6　23-23　2012/02/02

A Content Adddressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells Invited Peer-reviewed

R. Nebashi, N. Sakimura, Y Tsuji, S. Fukami, H. Honjo, S. Saito, S.Miura, N.Ishiwata, K. kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

The 2nd CSIS International Symposium on Spintronics-based VLSIs　F7　24-24　2012/02/02

Nonvolatile Low Power 16-bit/32-bit Binary Counter with MTJ and its Scalability Peer-reviewed

Shuta Togashi, Takashi Ohsawa, Tetsuo Endoh

The 2nd CSIS International Symposium on Spintronics-based VLSIs　P20　46-46　2012/02/02

A Study for Adopting PMOS Memory Cell for 1T1R STT-RAM with Asymmetric Switching Current MTJ Peer-reviewed

H. Koike, T. Ohsawa, T. Endoh

The 2nd CSIS International Symposium on Spintronics-based VLSIs　P21　47-47　2012/02/02

High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction Peer-reviewed

Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BD01-1-02BD01-6　2012/02

DOI： 10.1143/JJAP.51.02BD01 　

ISSN： 0021-4922

A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal-Oxide-Semiconductor Field-Effect Transistor Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BD03-1-02BD03-8　2012/02

DOI： 10.1143/JJAP.51.02BD03 　

ISSN： 0021-4922

eISSN： 1347-4065

Disturb-Free Three-Dimensional Vertical Floating Gate NAND with Separated-Sidewall Control Gate Peer-reviewed

Moon-Sik Seo, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BD04-1-02BD04-7　2012/02

DOI： 10.1143/JJAP.51.02BD04 　

ISSN： 0021-4922

eISSN： 1347-4065

Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling Peer-reviewed

Shuta Togashi, Takashi Ohsawa, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BE07-1-02BE07-5　2012/02

DOI： 10.1143/JJAP.51.02BE07 　

ISSN： 0021-4922

eISSN： 1347-4065

Multi-Electron Wave Packet Dynamics in Applied Electric Field Peer-reviewed

Yukihiro Takada, Young Taek Yoon, Taro Shiokawa, Satoru Konabe, Mitsuhiro Arikawa, Masakazu Muraguchi, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BJ01-1-02BJ01-5　2012/02

DOI： 10.1143/JJAP.51.02BJ01 　

ISSN： 0021-4922

Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme Peer-reviewed

Fumitaka Iga, Yasuhiro Yoshida, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BM02-1-02BM02-5　2012/02

DOI： 10.1143/JJAP.51.02BM02 　

ISSN： 0021-4922

Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Peer-reviewed

Mitsuhiro Arikawa, Masakazu Muraguchi, Yasuhiro Hatsugai, Kenji Shiraishi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BM03-1-02BM03-5　2012/02

DOI： 10.1143/JJAP.51.02BM03 　

ISSN： 0021-4922

Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory Peer-reviewed

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BM06-1-02BM06-5　2012/02

DOI： 10.1143/JJAP.51.02BM06 　

ISSN： 0021-4922

Two-step writing method for STT-MTJ to improve switching probability and write-speed Peer-reviewed

F. Iga, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

The 3nd CSIS International Symposium on Spintronics-based VLSIs　2012/01/31

Current controlled MOS current mode logic with auto-detection of threshold voltage fluctuation Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

IEICE Transactions on Electronics　E95-C　(4)　617-626　2012

DOI： 10.1587/transele.E95.C.617 　

ISSN： 1745-1353 0916-8524

Implementation of a Perpendicular MTJ-Based Read-Disturb-Tolerant 2T-2R Nonvolatile TCAM Based on a Reversed Current Reading Scheme Peer-reviewed

S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, T. Hanyu

2012 17TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC)　Session D1-5　475-476　2012

DOI： 10.1109/ASPDAC.2012.6164998 　

ISSN： 2153-6961

A high efficient and compact charge pump with multi-pillar vertical MOSFET Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

International Symposium on VLSI Technology, Systems, and Applications, Proceedings　8　(6)　6-8　2012

DOI： 10.1109/VLSI-TSA.2012.6210118 　

ISSN： 1930-8868

High-Speed Simulator including Accurate MTJ Models for Spintronics Integrated Circuit Design Peer-reviewed

Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Hiroaki Honjo, Tadahiko Sugibayashi, Hiroki Koike, Takashi Ohsawa, Shunsuke Fukami, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012)　1971-1974　2012

DOI： 10.1109/ISCAS.2012.6271663 　

ISSN： 0271-4302

Highly Scalable 3-D Vertical FG NAND Cell Arrays Using the Sidewall Control Pillar (SCP) Peer-reviewed

Moon-Sik Seo, Jong-Moo Choi, Sung-kye Park, Tetsuo Endoh

2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)　2　5-5　2012

DOI： 10.1109/IMW.2012.6213645 　

ISSN： 2330-7978

Spintronics primitive gate with high error correction efficiency 6(P error) 2 for logic-in memory architecture Peer-reviewed

Y. Tsuji, R. Nebashi, N. Sakimura, A. Morioka, H. Honjo, K. Tokutome, S. Miura, T. Suzuki, S. Fukami, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

Digest of Technical Papers - Symposium on VLSI Technology　T0704　63-64　2012

DOI： 10.1109/VLSIT.2012.6242462 　

ISSN： 0743-1562

Restructuring of memory hierarchy in computing system with spintronics-based technologies Invited Peer-reviewed

Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike, Takahiro Hanyu, Hideo Ohno

Digest of Technical Papers - Symposium on VLSI Technology　T1003　89-90　2012

DOI： 10.1109/VLSIT.2012.6242475 　

ISSN： 0743-1562

A 3.14 um 2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture Invited Peer-reviewed

Shoun Matsunaga, Sadahiko Miura, Hiroaki Honjou, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

IEEE Symposium on VLSI Circuits, Digest of Technical Papers　C0602　44-45　2012

DOI： 10.1109/VLSIC.2012.6243781 　

1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times Invited Peer-reviewed

T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Tokutome, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

IEEE Symposium on VLSI Circuits, Digest of Technical Papers　C0603　46-47　2012

DOI： 10.1109/VLSIC.2012.6243782 　

Spintronics for Instant-On Nonvolatile Electronics Invited Peer-reviewed

Kang L. Wang, P. Khalili Amiri

2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012)　117-118　2012

ISSN： 1097-2137

A Vertical-MOSFET-Based Digital Core Circuit for High-Speed Low-Power Vector Matching Peer-reviewed

Yitao Ma, Tadashi Shibata, Tetsuo Endoh

International SoC Design Conference (ISOCC 2011)　S11-1　203-206　2011/11/17

Design of a 270ps-Access 7T-2MTJ-Cell Nonvolatile Ternary Content-Addressable Memory Peer-reviewed

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

56th Annual Conference on Magnetism and Magnetic Materials(MMM2011)　479-479　2011/11

50%-Transistor-Less Standby-Power-Free 6-input LUT Circuit Using Redundant MTJ-Based Nonvolatile Logic-in-Memory Architecture Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

56th Annual Conference on Magnetism and Magnetic Materials(MMM2011)　480-480　2011/11

Impact of Vertical Structured devices for Future Nano LSI Invited Peer-reviewed

Tetsuo Endoh

AVS 58th International Symposium and Exhibition　EM-MoM10　(71)　2011/11/01

3D Vertical Structured Memory and Spintoronics Memory Technology Invited Peer-reviewed

Tetsuo Endoh

1st Annual World Congress of Nano-S&T　Track 2-2　(Nanowires, Molecular Electroni)　2011/10/24

Vertical Structured Cells and Vertical Stacked Cells for Nano-Generation High Density Memory Invited Peer-reviewed

Tetsuo Endoh

220th ECS Meeting　Session: E9-ULSI Process Integ　(7)　2011/10/10

Impact of Vertical Structured Devices and Spintronic Devices for Future Nano LSI Invited Peer-reviewed

Tetsuo Endoh

International Workshop on Quantum Nanostructures and Nanoelectronics (QNN2011)　Devices and Circuits　2011/10/04

Body Channel Type Vertical MOSFET to Suppress Gate Leakage Current Peer-reviewed

Takeshi Sasaki, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　104-105　2011/09/28

Nonvolatile Low Power 16-bit/32-bit MTJ Based Binary Counter and its Scaling Peer-reviewed

Shuta Togashi, Takashi Ohsawa, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　166-167　2011/09/28

A Wide-Range Tunable Level-Keeper using Vertical MOSFETs for Current-Reuse Systems Peer-reviewed

Satoru Tanoi, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　178-179　2011/09/28

High-Speed-Search Nonvolatile TCAM Using MTJ Devices Peer-reviewed

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

2011 International Conference on Solid State Devices and Materials (SSDM2011)　454-455　2011/09/28

Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin -Transfer -Torque (STT) MTJs Peer-reviewed

Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda, Takahiro, Hanyu, Hideo Ohno, Testuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　959-960　2011/09/28

A Study for Adopting PMOS Memory Cell for 1T1R STT-RAM with Asymmetric Switching Current MTJ Peer-reviewed

Hiroki Koike, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　961-962　2011/09/28

Novel 2step Writing Method for STT-RAM to Improve Switching Probability and Write Speed Peer-reviewed

Fumitaka. Iga, Yasuhiko Suzuki, Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　963-964　2011/09/28

A Compact Half Select Disturb Free SRAM Cell with Stacked Vertical MOSFET Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　973-974　2011/09/28

Disturb-free 3D vertical FG NAND with Separated-Sidewall Control Gate Peer-reviewed

Moon-Sik Seo, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　979-980　2011/09/28

Multi Electron Wave Packet Dynamics in Applied Electric Fields Peer-reviewed

Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi

2011 International Conference on Solid State Devices and Materials (SSDM2011)　1199-1200　2011/09/28

A Compact Nonvolatile Logic Element Using an MTJ/MOS-Hybrid Structure Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

2011 International Conference on Solid State Devices and Materials (SSDM2011)　1464-1465　2011/09/28

Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme Peer-reviewed

Fumitaka Iga, Yasuhiro Yoshida, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　1468-1469　2011/09/28

Role of Synthetic Ferrimagnets in MTJs from Wave Packet Dynamics Peer-reviewed

Mitsuhiro Arikawa, Masakazu Muraguchi, Yasuhiro Hatsugai, Kenji Shiraishi, Tetsuo Endoh

2011 International Conference on Solid State Devices and Materials (SSDM2011)　1472-1473　2011/09/28

Scalable STT RAM Technology for Low Power Systems Invited Peer-reviewed

T. Endoh, S. Ikeda, T Hanyu, N. Kasai, H. Ohno

Samsung Semiconductor Future Technology Forum 2011　2011/09/23

Sub-20nm STT-MRAM as a replacement for DRAM:Its Challenges and Opportunities Invited Peer-reviewed

T. Endoh, S. Ikeda, T Hanyu, N. Kasai, H. Ohno

Samsung Semiconductor Future Technology Forum 2011　2011/09/23

Suzuki-Trotter法による電子波束ダイナミックスの多体効果

尹永択, 塩川太郎, 高田幸宏, 岩田潤一, 小鍋哲, 有川晃弘, 村口正和, 遠藤哲郎, 初貝安弘, 白石賢二

日本物理学会2011年秋季大会　21aTM-1　2011/09/21

ハートリーフォック近似によるナノ構造中の電子波束ダイナミックス

塩川太郎, 高田幸宏, 尹永択, 岩田潤一, 小鍋哲, 有川晃弘, 村口正和, 遠藤哲郎, 初貝安弘, 白石賢二

日本物理学会2011年秋季大会　21aTM-2　2011/09/21

半導体中での波束ダイナミクスの印加電圧依存性

高田幸宏, 尹永択, 塩川太郎, 岩田潤一, 小鍋哲, 有川晃弘, 村口正和, 遠藤哲郎, 初貝安弘, 白石賢二

日本物理学会2011年秋季大会　22aTM-3　2011/09/21

3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control Gate Peer-reviewed

Moon-Sik Seo, Sung-Kye Park, Tetsuo Endoh

IEEE TRANSACTIONS ON ELECTRON DEVICES　58　(9)　2966-2973　2011/09

DOI： 10.1109/TED.2011.2160642 　

ISSN： 0018-9383

砒素イオン注入によるドーパント位置制御効果

小松原彰, 堀匡寛, 熊谷国憲, 小野行徳, 谷井孝至, 遠藤哲郎, 大泊巌, 品田賢宏

平成23年秋季 第72回 応用物理学会学術講演会　1a-M-10　2011/08/29

単一イオン注入法による位置と個数を制御したデバイスの低温伝導特性評価

堀匡寛, Enrico Prati, Filippo, Guagliardo, 小野行徳, 小松原彰, 熊谷国憲, 谷井孝至, 遠藤哲郎, 大泊巌, 品田賢宏

平成23年秋季 第72回 応用物理学会学術講演会　1p-P10–11　2011/08/29

Size Effect of Self-Heating in Vertical MOSFET Peer-reviewed

A. Wang, K. Tanaka, M. Arikawa, M. Muraguchi, T. Endoh

2011 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFORMATION ENGINEERS　1A01　1-1　2011/08/25

DOI： 10.11528/tsjc.2011.0_1 　

Low-power sub-GHz Vertical MOSFET based MCML Peer-reviewed

A. Kobayashi, Y. Ma, T. Endoh

2011 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFORMATION ENGINEERS　1A02　2-2　2011/08/25

DOI： 10.11528/tsjc.2011.0_2 　

21aTM-2 Electron Wave Packet Dynamics in the Nano Scale Structure using Hartree-Fock Approximation

Shiokawa,T, Takada,Y, Yoon,Y. T, Iwata,J.-I, Konabe,S, Arikawa,M, Muraguchi,M, Endoh,T, Hatsugai,Y, Shiraishi,K

Meeting abstracts of the Physical Society of Japan　66　(2)　666　2011/08

ISSN： 1342-8349

21aTM-1 Multi-Body Effect of Electron Wave Packet Dynamics in the Nano Scale Structure using Suzuki-Trotter Method

Yoon,Y. T, Shiokawa,T, Takada,Y, Iwata,J-I, Konabe,S, Arikawa,M, Muraguchi,M, Endoh,T, Hatsugai,Y, Shiraishi,K

Meeting abstracts of the Physical Society of Japan　66　(2)　666　2011/08

ISSN： 1342-8349

22aTM-3 Applied electric field dependence of the wave packets dynamics in the semiconductor

Takada,Y, Yoon,Y. T, Shiokawa,T, Iwata,J. I, Konabe,S, Arikawa,M, Muraguchi,M, Endoh,T, Hatsugai,Y, Shiraishi,K

Meeting abstracts of the Physical Society of Japan　66　(2)　678　2011/08

ISSN： 1342-8349

Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors Peer-reviewed

Masahiro Hori, Takahiro Shinada, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

APPLIED PHYSICS LETTERS　99　(6)　062103-1-062103-3　2011/08

DOI： 10.1063/1.3622141 　

ISSN： 0003-6951

Device Desing of Multi Gate structure IMOS Peer-reviewed

A. Itagaki, T. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　1A.5　15-19　2011/06/29

Device Desing of Body Channel Type Vertical MOSFET Peer-reviewed

Takuya Imamoto, Tetsuo Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　1A.6　15-20　2011/06/29

Theoretical Study on Current Path Control by Electrostatic Lens Effect in Vertical MOSFET Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　1A.8　30-35　2011/06/29

Suppression of Gate Leakage Current with Slim Pillar Type Vertical MOSFET Peer-reviewed

T. Sasaki, T. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　1A.9　36-40　2011/06/29

Study of Vertical MOSFET based MOS Current Mode Logic Peer-reviewed

A. Kobayashi, H. Na, T. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　1A.13　54-58　2011/06/29

Control of Dopant Distribution by Single-Ion Implantation and its Impact on Transconductance of FETs Peer-reviewed

T. Shinada, M. Hori, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I Ohdomari

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　1B.4　71-74　2011/06/29

FG Width Scalability of the 3-D vertical FG NAND with the Sidewall Control Gate (SCG) Peer-reviewed

Moon-Sik Seo, Tetsuo. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　1B.5　75-80　2011/06/29

Time-Dependent Switching Characteristics of Magnetic Tunnel Junction (MTJ) Peer-reviewed

Y. Yoshida, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　2B.7　167-170　2011/06/29

Study of the Resistive Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuit Peer-reviewed

F. Iga, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　2B.8　171-174　2011/06/29

Electron Dynamics in the Nano scale Transistor Peer-reviewed

Y. Takada, Y.T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　3A.4　199-203　2011/06/29

Electron dynamics in the ferromagnetic tunnel junction Peer-reviewed

M. Arikawa, Y. Hatsugai, K. Shiraishi, T. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　3A.5　205-209　2011/06/29

Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　3A.10　225-230　2011/06/29

Low Power Nonvolatile Counter Circuit with Fine-Grained Power Gating Peer-reviewed

Shuta Togashi, Takashi Ohsawa, Tetsuo Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　3B.10　267-270　2011/06/29

A Schmitt Trigger Based SRAM with Vertical MOSFET Peer-reviewed

H. Na, T. Endoh

2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)　3B.11　271-274　2011/06/29

3D CMOS Devices –Why do we need them and challenges Invited Peer-reviewed

Tetsuo Endoh

7th Annual SEMATECH Symposium Japan　Session 2　2011/06/22

Impact of Spintronics Devices with Vertical MOSFET Technology for Future Nano-VLSI Invited Peer-reviewed

Tetsuo Endoh

CMOS Emerging Technologies Meeting 2011　Session 6E　2011/06/17

Will Emerging Non-Volatile Memories Finally Emerge? Invited Peer-reviewed

Tetsuo Endoh

2011 Symposia on VLSI Technology and Circuits　R-2　2011/06/13

Fully Parallel 6T-2MTJ Nonvolatile TCAM with Single-Transistor-Based Self Match-Line Discharge Control Peer-reviewed

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Shunsuke Fukami, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

2011 Symposia on VLSI Technology and Circuits　298-299　2011/06/13

A Content Addressable Memory Using Magnetic Domain Wall Motion Cells Peer-reviewed

R. Nebashi, N. Sakimura, Y. Tsuji, S. Fukami, H. Honjo, S. Saito, S. Miura, N. Ishiwata, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

2011 Symposia on VLSI Technology and Circuits　300-301　2011/06/13

Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme Peer-reviewed

Shoun Matsunaga, Masanori Natsui, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(6)　063004-1-063004-7　2011/06

DOI： 10.1143/JJAP.50.063004 　

ISSN： 0021-4922

Research and Development of Ultra-low Power Spintronics based VLSIs Invited Peer-reviewed

Tetsuo Endoh

7th International Nanotechnology Conference on Communication and Cooperation (INC 7)　2011/05/16

The Optimum Physical Targets of the 3-Dimensional Vertical FG NAND Flash Memory Cell Arrays with the Extended Sidewall Control Gate (ESCG) Structure Peer-reviewed

Moon-Sik Seo, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　686-692　2011/05

DOI： 10.1587/transele.E94.C.686 　

ISSN： 0916-8524

eISSN： 1745-1353

Impact of Floating Body Type DRAM with the Vertical MOSFET Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　705-711　2011/05

DOI： 10.1587/transele.E94.C.705 　

ISSN： 0916-8524

eISSN： 1745-1353

Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process Peer-reviewed

Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　724-729　2011/05

DOI： 10.1587/transele.E94.C.724 　

ISSN： 0916-8524

eISSN： 1745-1353

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Peer-reviewed

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　730-736　2011/05

DOI： 10.1587/transele.E94.C.730 　

ISSN： 0916-8524

eISSN： 1745-1353

Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　737-742　2011/05

DOI： 10.1587/transele.E94.C.737 　

ISSN： 0916-8524

eISSN： 1745-1353

The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation Peer-reviewed

Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　743-750　2011/05

DOI： 10.1587/transele.E94.C.743 　

ISSN： 0916-8524

eISSN： 1745-1353

Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit Peer-reviewed

Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　751-759　2011/05

DOI： 10.1587/transele.E94.C.751 　

ISSN： 0916-8524

eISSN： 1745-1353

Verification of Stable Circuit Operation of 180 nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation Peer-reviewed

Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E94C　(5)　760-766　2011/05

DOI： 10.1587/transele.E94.C.760 　

ISSN： 1745-1353

Fabrication of Silicon Pillar with 25 nm Half Pitch Using New Multiple Double Patterning Technique Peer-reviewed

Masato Kushibiki, Arisa Hara, Eiichi Nishimura, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(4)　04DA16-1-04DA16-5　2011/04

DOI： 10.1143/JJAP.50.04DA16 　

ISSN： 0021-4922

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell Peer-reviewed

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(4)　04DD04-1-04DD04-4　2011/04

DOI： 10.1143/JJAP.50.04DD04 　

ISSN： 0021-4922

eISSN： 1347-4065

Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping Peer-reviewed

Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

APPLIED PHYSICS EXPRESS　4　(4)　046501-1-046501-2　2011/04

DOI： 10.1143/APEX.4.046501 　

ISSN： 1882-0778

MTJへの自動書き込み機能を有した不揮発性インバータ回路

冨樫秀太, 小池洋紀, 遠藤哲郎

平成23年春季 第58回 応用物理学関係連合講演会　25a-KQ-2　2011/03/24

ドーパント位置制御による電界効果トランジスタの相互コンダクタンス評価

堀匡寛, 品田賢宏, 平圭吾, 小松原彰, 小野行徳, 谷井孝至, 遠藤哲郎, 大泊巌

平成23年春季 第58回 応用物理学関係連合講演会　25a-P3-14　2011/03/24

縦型MOSFETによる6Tr SRAMのAccess Timeの向上

羅炯竣, 遠藤哲郎

平成23年春季 第58回 応用物理学関係連合講演会　26a-KC-7　2011/03/24

Double Gate IMOSによるスイッチング特性

板垣明宏, 遠藤哲郎

平成23年春季 第58回 応用物理学関係連合講演会　26p-KD-10　2011/03/24

Spintronics-based VLSIs for Ultra Low power Nonvolatile Computer Systems Invited Peer-reviewed

Tetsuo Endoh

9th International Symposium on Nanotechnology of International Nanotechnology Exhibition and Conference　2011/02/18

Nonvolatile Computer Systems and Memory Hierarchy Transformation with STT RAM Technology Invited Peer-reviewed

Tetsuo Endoh, S. Ikeda, T. Hanyu, N. Kasai, H. Ohno

The 1st CSIS International Symposium on Spintronics-based VLSIs and The 7th RIEC International Workshop on Spintronisc　17　2011/02/03

Effect of Sb template layer on GaSb thin films grown on Si(111) substrate by molecular beam epitaxy

H. Toyota, A. Mikami, T. Endoh, Y. Jinbo, N. Uchitomi

Physica Status Solidi (C) Current Topics in Solid State Physics　8　(2)　269-271　2011/02

DOI： 10.1002/pssc.201000522 　

ISSN： 1862-6351 1610-1642

Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

Masahiro Hori, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari, Takahiro Shinada

Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011　75-76　2011

DOI： 10.1109/IWJT.2011.5970003 　

Three-terminal domain-wall cell architectures Peer-reviewed

N. Ishiwata, S. Fukami, S. Saitho, R. Nebashi, N. Sakimura, H. Honjo, S. Miura, T. Sugibayashi, Y. Thuji, M. Murahata, H. Ohno, T. Endoh, T. Hanyu, N. Kasai

International Magnetics Conference 2011 abstract　2011

Collective tunneling model between two-dimensional electron gas to Si-Nano Dot Peer-reviewed

M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, T. Endoh

AIP Conference Proceedings　1399　295-296　2011

DOI： 10.1063/1.3666370 　

ISSN： 0094-243X 1551-7616

Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot Peer-reviewed

M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, T. Endoh

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS　1399　2011

DOI： 10.1063/1.3666370 　

ISSN： 0094-243X

Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-scale Ohmic Contact Peer-reviewed

Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Shintaro Nomura, Kenji Shiraishi

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　470　43-+　2011

DOI： 10.4028/www.scientific.net/KEM.470.43 　

ISSN： 1013-9826

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure Peer-reviewed

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　470　48-+　2011

DOI： 10.4028/www.scientific.net/KEM.470.48 　

ISSN： 1013-9826

New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect Peer-reviewed

Moon-Sik Seo, Tetsuo Endoh

International Symposium on VLSI Technology, Systems, and Applications, Proceedings　152-153　2011

DOI： 10.1109/VTSA.2011.5872270 　

A new compact SRAM cell by vertical MOSFET for low-power and stable operation Peer-reviewed

Hyoungjun Na, Tetsuo Endoh

2011 3rd IEEE International Memory Workshop, IMW 2011　Session 3-3　46-49　2011

DOI： 10.1109/IMW.2011.5873204 　

A novel 3-d vertical FG NAND flash memory cell arrays using the separated sidewall control gate (S-SCG) for highly reliable MLC operation Peer-reviewed

Moon-Sik Seo, Bong-Hoon Lee, Sung-Kye Park, Tetsuo Endoh

2011 3rd IEEE International Memory Workshop, IMW 2011　Session 4-3　61-64　2011

DOI： 10.1109/IMW.2011.5873208 　

Restructuring of Memory Layer in Electrical System and Its Novel Evolution with Nonvolatile Logic Invited Peer-reviewed

T. Endoh

ULSI PROCESS INTEGRATION 7　41　(7)　59-70　2011

DOI： 10.1149/1.3633285 　

ISSN： 1938-5862

Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot Peer-reviewed

M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, T. Endoh

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS　1399　295-296　2011

DOI： 10.1063/1.3666370 　

ISSN： 0094-243X

A 600MHz MTJ-Based Nonvolatile Latch Making Use of Incubation Time in MTJ Switching Peer-reviewed

T. Endoh, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　Session No. 4.3　2011

DOI： 10.1109/IEDM.2011.6131487 　

Quantum transport in deterministically implanted single-donors in Si FETs Peer-reviewed

T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　Session No. 30.4　2011

DOI： 10.1109/IEDM.2011.6131644 　

A new sensing scheme with high signal margin suitable for Spin-Transfer Torque RAM Peer-reviewed

Hiroki Koike, Tetsuo Endoh

International Symposium on VLSI Technology, Systems, and Applications, Proceedings　56-57　2011

DOI： 10.1109/VTSA.2011.5872230 　

Collective Tunneling Model in Charge Trap Type NVM Cell Peer-reviewed

M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh

Jpn. J. Appl. Phys.　2010/12

Spin Transfer Torque MRAM (SPRAM) and its applications Invited Peer-reviewed

Tetsuo Endoh

International Technology Roadmap for Semiconductors Memory Materials Workshop　2010/11/30

3D stack of FG type NAND Flash memory cell towards ultra high density storage memory Invited Peer-reviewed

M.S. Seo, T. Endoh

4th Stanford and Tohoku Universities Joint Open Workshop on 3D Transistor and its Applications　2010/11/05

A new vertical MOSFET "Vertical Logic Circuit (VLC) MOSFET" suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit Peer-reviewed

Koji Sakui, Tetsuo Endoh

SOLID-STATE ELECTRONICS　54　(11)　1457-1462　2010/11

DOI： 10.1016/j.sse.2010.06.005 　

ISSN： 0038-1101

A high efficient, low power, and compact charge pump by vertical MOSFETs Peer-reviewed

Koji Sakui, Tetsuo Endoh

SOLID-STATE ELECTRONICS　54　(10)　1192-1196　2010/10

DOI： 10.1016/j.sse.2010.05.016 　

ISSN： 0038-1101

Collective Tunneling Model in Charge Trap Type NVM Cell Peer-reviewed

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

the 2010 International Conference on Solid State Devices and Materials　E-3-2　750-751　2010/09/22

Fabrication of hp 25nm Si Pillar Using New Multiple Double Patterning Technique Peer-reviewed

Masato Kushibiki, Arisa Hara, Eiichi Nishimura, Tetsuo Endoh

the 2010 International Conference on Solid State Devices and Materials　P-1-25L　233-234　2010/09/22

構造融合・機能融合によるシリコンテクノロジーの新展開-シリコンテクノロジーの未来像を徹底的に考える- Invited Peer-reviewed

遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　16p-ZE-8　2010/09/14

SiON/Poly-Si NMOSFETの飽和領域における1/fノイズ特性 Peer-reviewed

今本拓也, 佐々木健志, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　14a-ZE-12　2010/09/14

縦型構造MOSFETおよびFINFETにおける10nmチャネル領域への電子注入に及ぼす不純物位置効果 Peer-reviewed

村口正和, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　14a-ZE-13　2010/09/14

I-MOSのＳ-Factor特性に対するi型領域長依存性 Peer-reviewed

板垣明宏, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　15a-ZE-5　2010/09/14

High-k/Metal Gate nMOSFETにおける駆動電流の温度依存特性 Peer-reviewed

佐々木健志, 今本拓也, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　15a-ZE-6　2010/09/14

The Scalability of FG width of the 3-dimensional vertical FG NAND flash memory cell arrays with the Extended Sidewall Control Gate (ESCG) structure Peer-reviewed

徐文植, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　17a-ZE-4　2010/09/14

Study of Retention Characteristics of Vertical type 1T-DRAM Peer-reviewed

則房勇人, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　17a-ZE-10　2010/09/14

1GHz以上の高速電流パルス生成回路を有する2ステッププログラム手法のベースパルス特性 Peer-reviewed

羅炯竣, 鈴木保彦, 今本拓也, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　17a-ZE-11　2010/09/14

Current Controlled MOS Current Mode Logicによる出力基準電圧の安定化 Peer-reviewed

羅炯竣, 遠藤哲郎

平成22年秋季第71回応用物理学会学術講演会　17a-ZE-12　2010/09/14

基板バイアス印加による単一-イオン個数制御性の検証 Peer-reviewed

堀匡寛, 小松原彰, 品田賢宏, 小野行徳, 平圭吾, 谷井孝至, 遠藤哲郎, 大泊巌

平成22年秋季第71回応用物理学会学術講演会　16a-ZD-3　2010/09/14

縦型MOSFET技術に基づく3次元集積回路とその将来展望 Invited Peer-reviewed

遠藤哲郎

技術戦略委員会省電力エレクトロニクス技術分科会, 電子情報技術産業協会技報　1-5　2010/09/10

Importance of electronic state of two-dimensional electron gas for electron injection process in nano-electronic devices Peer-reviewed

M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　42　(10)　2602-2605　2010/09

DOI： 10.1016/j.physe.2009.12.025 　

ISSN： 1386-9477

Proposal of a new physical model for Ohmic contacts Peer-reviewed

Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　42　(10)　2837-2840　2010/09

DOI： 10.1016/j.physe.2010.02.011 　

ISSN： 1386-9477

New Phenomena in the Dependency of 1/f Noise Characteristics on Temperature for SiON/Poly-Si Gate N-type MOSFET Peer-reviewed

Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh

2010 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFORMATION ENGINEERS　1A06　6　2010/08/26

The interference characteristics of the 3-dimensional vertical FG NAND flash memory cell arrays with the Extended Sidewall Control Gate (ESCG) structure Peer-reviewed

Moon-Sik Seo, Tetsuo Endoh

2010 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFORMATION ENGINEERS　1A07　7　2010/08/26

Improvement of Differential-Mode Voltage Gain by Current Controlled MOS Current Mode Logic Peer-reviewed

H.-J. Na, Tetsuo Endoh

2010 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFORMATION ENGINEERS　1A09　9　2010/08/26

Base Pulse Characteristics of 2 Step Program Method with Over 1GHz High-Speed Current Pulse Generation Circuit Peer-reviewed

H.-J. Na, Yasuhiko Suzuki, Takuya Imamoto, Tetsuo Endoh

2010 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFORMATION ENGINEERS　1A10　10　2010/08/26

Disturb Characteristics of Vertical type 1T-DRAM Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

2010 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFORMATION ENGINEERS　1A11　11　2010/08/26

縦型構造MOSFET およびFINFET における10nm チャネル領域への電子注入過程の研究 Peer-reviewed

村口正和, 遠藤哲郎

電気関係学会東北支部連合大会　1I07　283　2010/08/26

A Compact Space and Efficient Drain Current Design for Multipillar Vertical MOSFETs Peer-reviewed

Koji Sakui, Tetsuo Endoh

IEEE TRANSACTIONS ON ELECTRON DEVICES　57　(8)　1768-1773　2010/08

DOI： 10.1109/TED.2010.2050546 　

ISSN： 0018-9383

A Compact Space and Efficient Drain Current Design for Multipillar Vertical MOSFETs Peer-reviewed

Koji Sakui, Tetsuo Endoh

IEEE TRANSACTIONS ON ELECTRON DEVICES　57　(8)　1768-1773　2010/08

DOI： 10.1109/TED.2010.2050546 　

ISSN： 0018-9383

The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter Peer-reviewed

Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　7A.4　(ED)　177-182　2010/06/30

ISSN： 0913-5685

Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET Peer-reviewed

Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　7A.4　(ED)　195-198　2010/06/30

ISSN： 0913-5685

Impact of Floating Body type DRAM with the Vertical MOSFET Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　8A.3　(ED)　211-216　2010/06/30

The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure Peer-reviewed

Moon-Sik Seo, Tetsuo Endoh

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　8A.6　(ED)　225-230　2010/06/30

ISSN： 0913-5685

The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation Peer-reviewed

Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muragudhi, Takuya Imamoto, Takeshi Sasaki

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　7B.1　(ED)　257-262　2010/06/30

ISSN： 0913-5685

Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation Peer-reviewed

Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　7B.2　(ED)　263-267　2010/06/30

ISSN： 0913-5685

Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells Peer-reviewed

Tetsuo Endoh, Yasuhiko Suzuki, Takuya Imamoto, Hyoungjun Na

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　7B.6　(ED)　283-288　2010/06/30

ISSN： 0913-5685

Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　9B.2　(ED)　309-313　2010/06/30

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Peer-reviewed

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh

2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　9B.4　(ED)　319-324　2010/06/30

ISSN： 0913-5685

Sub-threshold Characteristics of High-k/Metal Gate MOSFET Peer-reviewed

Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh

International Meeting for Future of Electron Devices　A-2　32-33　2010/05/13

Dependency of Driving Current on Channel Width in High-k/Metal Gate MOSFET Peer-reviewed

Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh

International Meeting for Future of Electron Devices　A-3　34-35　2010/05/13

Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor Peer-reviewed

M. Muraguchi, Y, Sakurai, Y.Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh

International Meeting for Future of Electron Devices　B-2　48-49　2010/05/13

Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure Peer-reviewed

Tetsuo Endoh, Koji Sakui, Yukio Yasuda

IEICE TRANSACTIONS ON ELECTRONICS　E93C　(5)　534-539　2010/05

DOI： 10.1587/transele.E93.C.534 　

ISSN： 0916-8524

eISSN： 1745-1353

Study on Quantum Electro-Dynamics in Vertical MOSFET Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E93C　(5)　552-556　2010/05

DOI： 10.1587/transele.E93.C.552 　

ISSN： 0916-8524

eISSN： 1745-1353

Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET Peer-reviewed

Tetsuo Endoh, Koji Sakui, Yukio Yasuda

IEICE TRANSACTIONS ON ELECTRONICS　E93C　(5)　557-562　2010/05

DOI： 10.1587/transele.E93.C.557 　

ISSN： 0916-8524

eISSN： 1745-1353

Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Peer-reviewed

Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi

IEICE TRANSACTIONS ON ELECTRONICS　E93C　(5)　563-568　2010/05

DOI： 10.1587/transele.E93.C.563 　

ISSN： 1745-1353

eISSN： 1745-1353

Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit Peer-reviewed

Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E93C　(5)　602-607　2010/05

DOI： 10.1587/transele.E93.C.602 　

ISSN： 0916-8524

eISSN： 1745-1353

Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits Peer-reviewed

Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

IEICE TRANSACTIONS ON ELECTRONICS　E93C　(5)　608-613　2010/05

DOI： 10.1587/transele.E93.C.608 　

ISSN： 0916-8524

eISSN： 1745-1353

Mechanical and tribological properties of boron, nitrogen-coincorporated diamond-like carbon films prepared by reactive radio-frequency magnetron sputtering Peer-reviewed

H. Nakazawa, A. Sudoh, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

DIAMOND AND RELATED MATERIALS　19　(5-6)　503-506　2010/05

DOI： 10.1016/j.diamond.2010.01.026 　

ISSN： 0925-9635

Effect of Carrier Scattering Phenomena on Drain Current Variability in Si MOSFETs Peer-reviewed

K. Ohmori, T. Matsuki, Y. Ohkura, J. Yugami, K. Ikeda, Y. Ohji, Y. Yasuda, T. Endoh, K. Shiraishi, K. Yamada

217th ECS Meeting　918(E1)　2010/04/25

Impact of Vertical Devices for Future Nano LSI Invited Peer-reviewed

Tetsuo Endoh

Materials Research Society (MRS) 2010 Spring Meeting　I7-1　2010/04/09

Spin Transfer Torque MRAM (SPRAM) and its applications Invited Peer-reviewed

Tetsuo Endoh

The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Memory Technologies Workshop, Emerging Research Devices　2010/04/06

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots Peer-reviewed

Y. Sakurai, Y. Takada, J-I. Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

ECS Transactions　28　(71)　369-374　2010/04

2次元電子ガス－量子ドット界面における電子トンネル過程に対する微視的考察 Peer-reviewed

村口正和, 高田幸宏, 櫻井蓉子, 野村晋太郎, 白石賢二, 牧原克典, 池田弥央, 宮崎誠一, 重田育照, 遠藤哲郎

日本物理学会第65回年次大会講演概要集　21aHV-13　713　2010/03/20

Impact of Vertical Structured Devices and Spintronic Devices for Future Nano LSI Invited Peer-reviewed

Tetsuo Endoh

SEMICON Korea2010 STS　S3-6　2010/02/03

Restructuring of Memory Hierarchy in Electrical System and No-Standby-Power Nonvolatile Logic with STT-RAM Technology Invited Peer-reviewed

Tetsuo Endoh

The 2nd CSIS International Symposium on Spintronics-based VLSIs　F1　18-18　2010/02/02

Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots Peer-reviewed

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　42　(4)　918-921　2010/02

DOI： 10.1016/j.physe.2009.11.120 　

ISSN： 1386-9477

Current status of NAND flash memory and future prospect of the next generation nonvolatile semiconductor memory for new storage systems Invited Peer-reviewed

Tetsuo Endoh

11th Joint MMM-intermag Conference　HA-05　2010/01/18

Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide Peer-reviewed

Vipul Singh, Hiroshi Inokawa, Tetsuo Endoh, Hiroaki Satoh

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(12)　128002_1-2　2010

DOI： 10.1143/JJAP.49.128002 　

ISSN： 0021-4922

Proposal of a new electronic structure model of ohmic contacts for the future metallic source and drain Peer-reviewed

Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Shintaro Nomura, Kenji Shiraishi

IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology　78-81　2010

DOI： 10.1109/IWJT.2010.5474985 　

Transient characteristic of fabricated magnetic tunnel junction (MTJ) programmed with CMOS circuit Invited Peer-reviewed

Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

IEICE Transactions on Electronics　E93-C　(5)　602-607　2010

DOI： 10.1587/transele.E93.C.602 　

ISSN： 1745-1353 0916-8524

The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal-Oxide-Semiconductor Circuits Peer-reviewed

Tetsuo Endoh, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Masashi Kamiyanagi, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　4　2010

DOI： 10.1143/JJAP.49.04DM06 　

ISSN： 0021-4922

Sub-10 nm multi-nano-pillar type vertical MOSFET Peer-reviewed

Tetsuo Endoh, Koji Sakui, Yukio Yasuda

IEICE Transactions on Electronics　E93-C　(5)　557-562　2010

DOI： 10.1587/transele.E93.C.557 　

ISSN： 1745-1353 0916-8524

Study of the DC performance of fabricated magnetic tunnel junction integrated on back-end metal line of CMOS circuits Peer-reviewed

Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda, Katsuya Miur, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

IEICE Transactions on Electronics　E93-C　(5)　608-613　2010

DOI： 10.1587/transele.E93.C.608 　

ISSN： 1745-1353 0916-8524

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots Peer-reviewed

Yoko Sakurai, Jun-ichi Iwata, Masakazu Muraguchi, Yasuteru Shigeta, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Shin-ichi Saito, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(1)　014001-1-014001-4　2010

DOI： 10.1143/JJAP.49.014001 　

ISSN： 0021-4922

eISSN： 1347-4065

Low Frequency Noise Characterization in Metal Oxide Semiconductor Field Effect Transistor Based Charge Transfer Device at Room and Low Temperatures Peer-reviewed

Vipul Singh, Hiroshi Inokawa, Tetsuo Endoh, Hiroaki Satoh

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(3)　034203-1-034203-4　2010

DOI： 10.1143/JJAP.49.034203 　

ISSN： 0021-4922

eISSN： 1347-4065

A unique and accurate extraction technique of the asymmetric bottom-pillar resistance for the vertical MOSFET Peer-reviewed

Koji Sakui, Tetsuo Endoh

2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS　220-224　2010

DOI： 10.1109/ICMTS.2010.5466812 　

ISSN： 1071-9032

Fine-Grained Power-Gating Scheme of a Metal-Oxide-Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory Peer-reviewed

Shoun Matsunaga, Masanori Natsui, Kimiyuki Hiyama, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　04DM05-1-04DM05-5　2010

DOI： 10.1143/JJAP.49.04DM05 　

ISSN： 0021-4922

The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal-Oxide-Semiconductor Circuits Peer-reviewed

Tetsuo Endoh, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Masashi Kamiyanagi, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　04DM06-1-04DM06-5　2010

DOI： 10.1143/JJAP.49.04DM06 　

ISSN： 0021-4922

Investigation of the New Physical Model of Ohmic Contact for Future Nano-scale Contacts Peer-reviewed

Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT　28　(1)　73-79　2010

DOI： 10.1149/1.3375590 　

ISSN： 1938-5862

Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures Peer-reviewed

Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT　28　(1)　369-374　2010

DOI： 10.1149/1.3375623 　

ISSN： 1938-5862

A compact, high-speed, and low-power design for multi-pillar vertical MOSFET's, suppressing characteristic influences by process fluctuation Peer-reviewed

Koji Sakui, Tetsuo Endoh

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010　30-31　2010

DOI： 10.1109/VTSA.2010.5488961 　

Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method Peer-reviewed

T. Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, I. Ohdomari

ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES II　7637　763711-1-763711-7　2010

DOI： 10.1117/12.848322 　

ISSN： 0277-786X

Design impacts on NAND Flash memory core circuits with vertical MOSFETs Peer-reviewed

Koji Sakui, Tetsuo Endoh

2010 IEEE International Memory Workshop, IMW 2010　6-3　2010

DOI： 10.1109/IMW.2010.5488310 　

The 3-dimensional vertical FG NAND flash memory cell arrays with the novel electrical S/D technique using the Extended Sidewall Control Gate (ESCG) Peer-reviewed

Moon-Sik Seo, Sung-Kye Park, Tetsuo Endoh

2010 IEEE International Memory Workshop, IMW 2010　9-4　2010

DOI： 10.1109/IMW.2010.5488392 　

A COMPACT AND LOW POWER LOGIC DESIGN FOR MULTI-PILLAR VERTICAL MOSFETS Peer-reviewed

Koji Sakui, Tetsuo Endoh

2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS　A2L-C　309-312　2010

DOI： 10.1109/ISCAS.2010.5537837 　

ISSN： 0271-4302

Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates Peer-reviewed

H. Toyota, S. Fujie, M. Haneta, A. Mikami, T. Endoh, Y. Jinbo, N. Uchitomi

PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMS　3　(2)　1345-1350　2010

DOI： 10.1016/j.phpro.2010.01.189 　

ISSN： 1875-3892

Future high density memory with vertical structured device technology Invited Peer-reviewed

Tetsuo Endoh

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings　1051-1054　2010

DOI： 10.1109/ICSICT.2010.5667541 　

Magnetic Tunnel Junction for Nonvolatile CMOS Logic Invited Peer-reviewed

Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu, Naoki Kasai, Shoji Ikeda

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST　9.4.1-9.4.4　2010

DOI： 10.1109/IEDM.2010.5703329 　

Reliable Single Atom Doping and Discrete Dopant Effects on Transistor Performance Peer-reviewed

Takahiro Shinada, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST　26.5.1-26.5.4　2010

DOI： 10.1109/IEDM.2010.5703428 　

ISSN： 2380-9248

Stacked type NAND cell technology Invited Peer-reviewed

Koji Sakui, Tetsuo Endoh

3rd Stanford and Tohoku Universities Joint Open Workshop on 3D Transistor and its Applications　2009/12/04

Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition Peer-reviewed

Hideki Nakazawa, Takeshi Kinoshita, Yuhta Kaimori, Yuhki Asai, Maki Suemitsu, Toshimi Abe, Kanji Yasui, Tetsuo Endoh, Takashi Itoh, Yuzuru Narita, Yoshiharu Enta, Masao Mashita

JAPANESE JOURNAL OF APPLIED PHYSICS　48　(11)　116002-116010　2009/11

DOI： 10.1143/JJAP.48.116002 　

ISSN： 0021-4922

eISSN： 1347-4065

New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor Peer-reviewed

M. Muraguchi, Y.Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh

International Conference on. Solid State Devices and Materials (SSDM2009)　E10　2009/10/07

Fine-Grain Power-Gating Scheme of a CMOS/MTJ-Hybrid Bit-Serial Ternary Content-Addressable Memory Peer-reviewed

Shown Matsunaga, Atsushi Matsumoto, Masanori Natusi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Proc. of International Conference on Solid State Devices and Materials　1382-1383　2009/10

円－リング複合型量子ドットにおけるFloquet状態 Peer-reviewed

村口正和, 遠藤哲郎, 杉山功太, 多川知希, 奧西拓馬, 武田京三郎

日本物理学会2009年秋季大会　25pPSB-6　2009/09/25

光励起下における電子ガス－量子ドット結合系のC-V特性とI-V特性 Peer-reviewed

櫻井蓉子, 高田幸宏, 野村晋太郎, 白石賢二, 村口正和, 遠藤哲郎, 池田弥央, 牧原克典, 宮崎誠一

日本物理学会2009年秋季大会　26aXG-13　2009/09/25

量子ドットに閉じ込められた電子－電子，電子－正孔対の第一原理動力学 Peer-reviewed

多川知希, 武田京三郎, 村口正和, 遠藤哲郎

日本物理学会2009年秋季大会　25pPSB-7　2009/09/25

シングルイオン注入法の基板バイアス印加による単一性改善に関する研究 Peer-reviewed

堀匡寛, 品田賢宏, 平圭吾, 遠藤哲郎, 谷井孝至, 大泊巌

平成21年秋季第70回応用物理学会学術講演会　10p-TG-2　2009/09/08

離散的ドーパント位置のデバイス特性に及ぼす影響調査 Peer-reviewed

平圭吾, 品田賢宏, 堀匡寛, 谷井孝至, 遠藤哲郎, 大泊巌

平成21年秋季第70回応用物理学会学術講演会　8a-TE-5　2009/09/08

しきい値および電源電圧同時ばらつきに対するCC-MCMLインバータ回路の制御理論 Peer-reviewed

上柳雅史, 遠藤哲郎

平成21年秋季第70回応用物理学会学術講演会　8a-TE-5　2009/09/08

High-k絶縁膜/Poly-SiゲートおよびMetalゲート電極を有するn型MOSFETのカットオフ特性の評価 Peer-reviewed

佐々木健志, 今本拓也, 村口正和, 遠藤哲郎

平成21年秋季第70回応用物理学会学術講演会　10a-TA-10　2009/09/08

poly-Si及び金属ゲート電極を有するhigh-k絶縁膜系p型MOSFETのカットオフ特性 Peer-reviewed

今本拓也, 佐々木健志, 村口正和, 遠藤哲郎

平成21年秋季第70回応用物理学会学術講演会　10a-TA-9　2009/09/08

量子電子動力学に基づく縦型構造MOSFETの 駆動電流特性に対する理論的考察 Peer-reviewed

村口正和, 遠藤哲郎

平成21年秋季第70回応用物理学会学術講演会　11a-TH-1　2009/09/08

将来のナノコンタクトを目指したオーミック接触の再考 Peer-reviewed

高田幸宏, 村口正和, 遠藤哲郎, 野村晋太郎, 白石賢二

平成21年秋季第70回応用物理学会学術講演会　10p-TG-17　2009/09/08

ナノ世代デバイス設計から見たゲートスタック技術 Peer-reviewed

遠藤哲郎

平成21年秋季第70回応用物理学会学術講演会　9p-TC-6　2009/09/08

Performance enhancement of semiconductor devices by control of discrete dopant distribution Peer-reviewed

M. Hori, T. Shinada, K. Taira, N. Shimamoto, T. Tanii, T. Endo, I. Ohdomari

NANOTECHNOLOGY　20　(36)　365205 (5pp)-365210　2009/09

DOI： 10.1088/0957-4484/20/36/365205 　

ISSN： 0957-4484

Mechanical and Tribological Properties of Boron, Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Reactive Radio-Frequency Magnetron Sputtering Peer-reviewed

H. Nakazawa, A. Sudoh, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

20th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2009)　6-10　2009/09

Control Theory of CC-MCML Inverter for Stable Operation under Fluctuation of Supplied Voltage Peer-reviewed

M. Kamiyanagi, T. Endoh

2009 Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers,Japan　2A03　2009/08/20

Stability of Magnetic Tunnel Junction Integrated on CMOS Circuit Peer-reviewed

F. Iga, H. Ohono, T. Endoh

2009 Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers,Japan　2A22　2009/08/20

Evaluation of Drive Current of p-MOSFET with High-k Dielectric as a Gate Insulator for High-Performance CMOS Applications Peer-reviewed

T. Sasaki, T. Imamoto, T. Endoh

2009 Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers,Japan　2A01　2009/08/20

Evaluation of Drive Current of Hf-based High-k n-type MOSFET with p+poly-Si or Metal Gate Electrode Peer-reviewed

T. Imamoto, T. Sasaki, T. Endoh

2009 Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers,Japan　2A02　2009/08/20

縦型構造MOSFETにおけるチャネル中への電子注入過程に対する理論的研究 Peer-reviewed

村口正和, 遠藤哲郎

2009 Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers,Japan　1D04　2009/08/20

間欠ガス供給を用いたホットメッシュCVD法によるSi上GaNエピタキシャル成長 Peer-reviewed

齋藤健, 永田一樹, 西山洋, 末光眞希, 伊藤隆, 遠藤哲郎, 中澤日出樹, 成田克, 高田雅介, 赤羽正志, 安井寛治

電子情報通信学会 電子部品・材料研究会　109　(171)　61-66　2009/08/11

ISSN： 0913-5685

有機シランを用いたプラズマCVD法によるダイヤモンドライクカーボン薄膜の膜特性評価 Peer-reviewed

三浦創史, 中澤日出樹, 西崎圭太, 末光眞希, 安井寛治, 伊藤隆, 遠藤哲郎, 成田克

電子情報通信学会電子部品・材料（CPM）研究会　2009/08/10

有機シランを用いたプラズマCVD法によるダイヤモンドライクカーボン薄膜の膜特性評価 Peer-reviewed

三浦創史, 中澤日出樹, 西崎圭太, 末光眞希, 安井寛治, 伊藤隆, 遠藤哲郎, 成田克

電子情報通信学会技術研究報告　vol. 109　(No. 171)　13-18　2009/08/10

間欠ガス供給を用いたホットメッシュCVD法によるSi上GaNエピタキシャル成長 Peer-reviewed

齋藤健, 永田一樹, 西山洋, 末光眞希, 伊藤隆, 遠藤哲郎, 中澤日出樹, 成田克, 高田雅介, 赤羽正志, 安井寛治

電子情報通信学会技術研究報告　vol. 109　(No. 171)　61-66　2009/08/10

ISSN： 0913-5685

Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices Peer-reviewed

M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta

18th Electronic Properties of Two-Dimensional Systems (EP2DS-18) 14th Modulated Semiconductor Structures (MSS-14) Joint Conference　Tu-mP22　2009/07/20

Anomalous temperature dependence of electron tunneling Peer-reviewed

Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

18th Electronic Properties of Two-Dimensional Systems (EP2DS-18) 14th Modulated Semiconductor Structures (MSS-14) Joint Conference　Mo-eP49　2009/07/20

Anomalous temperature dependence of electron tunneling Peer-reviewed

Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi

18th Electronic Properties of Two-Dimensional Systems (EP2DS-18) 14th Modulated Semiconductor Structures (MSS-14) Joint Conference　Th-mP32　2009/07/20

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition Peer-reviewed

Yasuaki Komae, Kanji Yasui, Maki Suemitsu, Tetsuo Endoh, Takashi Ito, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

JAPANESE JOURNAL OF APPLIED PHYSICS　48　(7)　2009/07

DOI： 10.1143/JJAP.48.076509 　

ISSN： 0021-4922

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition Peer-reviewed

Yasuaki Komae, Kanji Yasui, Maki Suemitsu, Tetsuo Endoh, Takashi Ito, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

JAPANESE JOURNAL OF APPLIED PHYSICS　48　(7)　76509-76514　2009/07

DOI： 10.1143/JJAP.48.076509 　

ISSN： 0021-4922

Impact of Vertical Structured Devices for Future Nano LSI Invited Peer-reviewed

Tetsuo Endoh

2009 Lithography Workshop　Session5-2　2009/06/29

Study on Quantum Electro-Dynamics in Vertical MOSFET Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh

2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　2B.10　2009/06/24

Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Peer-reviewed

Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi

2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　3A.8　2009/06/24

The Stable Circuit Operation of Current Controlled MCML against Fluctuation of Supplied Voltage Invited Peer-reviewed

Masashi Kamiyanagi, Tetsuo Endoh

The 2009 International Meeting for future f Electron Devices, Kansai　SC-7　120-121　2009/05/14

Study of Stability of MOS Current Mode Logic NAND Circuit on Input Timimg Fluctuation Invited Peer-reviewed

Tetsuo Endoh, Kazuhiro Suzuki, Masashi Kamiyanagi, Masakazu Muraguchi

The 2009 International Meeting for future f Electron Devices, Kansai　C-3　58-59　2009/05/14

Evaluation of Time-Dependent Power Consumption in SONOS type MOS diode during Program Operation by using Pulsed IV system Invited Peer-reviewed

Fumitaka Iga, Tetsuo Endoh

The 2009 International Meeting for future f Electron Devices, Kansai　C-4　60-61　2009/05/14

Study of Electronic State in Electrode for Nano-Electronic Devices Invited Peer-reviewed

Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

The 2009 International Meeting for future f Electron Devices, Kansai　B-5　46-47　2009/05/14

Scalability of Vertical MOSFETs in Sub-10 nm Generation and Its Mechanism Peer-reviewed

Tetsuo Endoh, Yuto Norifusa

IEICE TRANSACTIONS ON ELECTRONICS　E92C　(5)　594-597　2009/05

DOI： 10.1587/transele.E92.C.594 　

ISSN： 0916-8524

eISSN： 1745-1353

Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor Peer-reviewed

Tetsuo Endoh, Yuto Norifusa

IEICE TRANSACTIONS ON ELECTRONICS　E92C　(5)　598-602　2009/05

DOI： 10.1587/transele.E92.C.598 　

ISSN： 0916-8524

eISSN： 1745-1353

Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML Type Latch Peer-reviewed

Tetsuo Endoh, Masashi Kamiyanagi

IEICE TRANSACTIONS ON ELECTRONICS　E92C　(5)　603-607　2009/05

DOI： 10.1587/transele.E92.C.603 　

ISSN： 0916-8524

eISSN： 1745-1353

Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition Peer-reviewed

H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

DIAMOND AND RELATED MATERIALS　18　(5-8)　831-834　2009/05

DOI： 10.1016/j.diamond.2008.10.043 　

ISSN： 0925-9635

The growth of GaN films by alternate source gas supply hot-mesh CVD method Peer-reviewed

Yasuaki Komae, Takeshi Saitou, Maki Suemitsu, Takashi Ito, Tetsuo Endoh, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane, Kanji Yasui

THIN SOLID FILMS　517　(12)　3528-3531　2009/04

DOI： 10.1016/j.tsf.2009.01.021 　

ISSN： 0040-6090

Si 原料に有機シランを用いたプラズマCVD 法によるSi 添加DLC 膜の膜特性評価 Peer-reviewed

三浦創史, 中澤日出樹, 西崎圭太, 末光眞希, 安井寛治, 伊藤隆, 遠藤哲郎, 成田克

2009年春季第56回応用物理関係連合講演会　2009/03/31

ホットメッシュCVD法を用いたGaN成長におけるパルスガス供給の効果 Peer-reviewed

齋藤 健, 小前 泰彰, 西山 洋, 末光 眞希, 伊藤 隆, 遠藤 哲郎, 中澤 日出樹, 成田 克, 高田雅介, 赤羽正志, 安井寛治

2009年春季第56回応用物理関係連合講演会　2009/03/30

少数個の電子で動く未来のデバイスの姿（シンポジウム講演） Peer-reviewed

村口正和, 遠藤哲郎, 白石賢二, 野村晋太郎, 櫻井蓉子, 高田幸宏, 宮崎誠一, 牧原克典, 池田弥央

第55回応用物理学関係連合講演会　2009/03/30

ホットメッシュCVD法を用いたGaN成長におけるパルスガス供給の効果 Peer-reviewed

齋藤 健, 小前泰彰, 西山洋, 末光眞希, 伊藤 隆, 遠藤哲郎, 中澤日出樹, 成田 克, 高田雅介, 赤羽正志, 安井寛治

日本物理学会春季大会　2009/03/30

電子ガスー量子ドット結合系における電子ダイナミクスⅡ Peer-reviewed

村口正和, 遠藤哲郎, 櫻井蓉子, 野村晋太郎, 高田幸宏, 白石賢二, 池田弥央, 牧原克典, 宮崎誠一, 斉藤慎一

日本物理学会春季大会　2009/03/27

電子ガスー量子ドット結合系における電子構造Ⅱ Peer-reviewed

高田幸宏, 櫻井蓉子, 村口正和, 池田弥央, 牧原克典, 宮崎誠一, 遠藤哲郎, 野村晋太郎, 白石賢二

日本物理学会春季大会　2009/03/27

電子ガスー量子ドット結合系におけるＣーＶ特性およびIーV特性のＳｗeep Rate依存性 Peer-reviewed

櫻井蓉子, 野村晋太郎, 高田幸宏, 白石賢二, 村口正和, 遠藤哲郎, 池田弥央, 牧原克典, 宮崎誠一

日本物理学会春季大会　2009/03/27

Si 原料に有機シランを用いたプラズマCVD 法によるSi 添加DLC 膜の膜特性評価 Peer-reviewed

三浦創史, 中澤日出樹, 西崎圭太, 末光眞希, 安井寛治, 伊藤隆, 遠藤哲郎, 成田克

日本物理学会春季大会　2009/03/27

New insight into Tunneling Process between Quantum Dot and Electron Gas Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh, Yoko Sakurai, Shintaro Nomura, Yukihiro Takada, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta

America Physical Society 2009 March Meeting　2009/03/17

Temperature Dependence of Electron Tunneling between Quantum Dots and Electron Gas Peer-reviewed

Yoko Sakurai, Shintaro Nomura, Yukihiro Takada, Kenji Shiraishi, Masakazu Muraguchi, Tetsuo Endoh, Mitsuhisa Ikeda, Katsunori Makihara

America Physical Society 2009 March Meeting　2009/03/17

Temperature Dependence of Electron Tunneling between Quantum Dots and Electron Gas Peer-reviewed

Yoko Sakurai, Shintaro Nomura, Yukihiro Takada, Kenji Shiraishi, Masakazu Muraguchi, Tetsuo Endoh, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

America Physical Society 2009 March Meeting　V11-9　2009/03/16

New insight into Tunneling Process between Quantum Dot and Electron Gas Peer-reviewed

Masakazu Muraguchi, Tetsuo Endoh, Yoko Sakurai, Shintaro Nomura, Yukihiro Takada, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta

America Physical Society 2009 March Meeting　V11-10　2009/03/09

Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices Peer-reviewed

Shoun Matsunaga, Kimiyuki Hiyama, Atsushi Matsumoto, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

APPLIED PHYSICS EXPRESS　2　(2)　2009/02

DOI： 10.1143/APEX.2.023004 　

ISSN： 1882-0778

Raman-scattering spectroscopy of epitaxial graphene formed on SiC film on Si substrate Peer-reviewed

Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Atsushi Konno, Yuzuru Narita, Maki Suemitsu, Hirokazu Fukidome, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh

e-Journal of Surface Science and Nanotechnology　7　107-109　2009/01/10

DOI： 10.1380/ejssnt.2009.107 　

ISSN： 1348-0391

eISSN： 1348-0391

Recent advance in single-ion implantation method for single-dopant devices

Takahiro Shinada, Masahiro Hori, Keigo Taira, Tetsuo Endoh, Iwao Ohdomari

Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009　96-99　2009

DOI： 10.1109/IWJT.2009.5166228 　

Erratum: Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate [e-J. Surf. Sci. Nanotech. Vol. 7, pp. 107-109 (2009)]

Miyamoto Yu, Handa Hiroyuki, Saito Eiji, Konno Atsushi, Narita Yuzuru, Suemitsu Maki, Fukidome Hirokazu, Ito Takashi, Yasui Kanji, Nakazawa Hideki, Endoh Tetsuo

e-J. Surf. Sci. Nanotech.　7　699-699　2009

DOI： 10.1380/ejssnt.2009.699 　

ISSN： 1348-0391

A new vertical MOSFET "Vcombining macron belowertical Lcombining macron belowogic Ccombining macron belowircuit (VLC) MOSFET" suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit Peer-reviewed

Koji Sakui, Tetsuo Endoh

2009 International Semiconductor Device Research Symposium, ISDRS '09　2009

DOI： 10.1109/ISDRS.2009.5378136 　

MTJ-Based Nonvolatile Logic-in-Memory Circuit, Future Prospects and Issues Peer-reviewed

Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

DATE: 2009 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, VOLS 1-3　433-+　2009

ISSN： 1530-1591

Scalability of vertical MOSFETs in sub-10nm generation and its mechanism Peer-reviewed

Tetsuo Endoh, Yuto Norifusa

IEICE Transactions on Electronics　E92-C　(5)　594-597　2009

DOI： 10.1587/transele.E92.C.594 　

ISSN： 1745-1353 0916-8524

Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array Invited Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

2009 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS　Session8-2　80-+　2009

Physics of Nano-contact Between Si Quantum Dots and Inversion Layer Peer-reviewed

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

ULSI PROCESS INTEGRATION 6　25　(7)　463-469　2009

DOI： 10.1149/1.3203984 　

ISSN： 1938-5862

A high efficient, low power, and compact charge pump by vertical MOSFET's Peer-reviewed

Koji Sakui, Tetsuo Endoh

2009 International Semiconductor Device Research Symposium, ISDRS '09　WP9-07-17　2009

DOI： 10.1109/ISDRS.2009.5378125 　

Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array Invited Peer-reviewed

Daisuke Suzuki, Masanori Natsui, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

2009 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS　80-+　2009

Theoretical investigation of quantum dot coupled to a two-dimensional electron system Peer-reviewed

Masakazu Muraguchi, Yukihiro Takada, Yoko Sakurai, Tetsuo Endoh, Shintaro Nomura, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Kenji Shiraishi

13th Advanced Heterostructures and Nanostructures Workshop　2008/12/07

Capacitance measurements on quantum dots coupled to a two-dimensional electron system Peer-reviewed

Shintaro Nomura, Yoko Sakurai, Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Kenji Shiraishi

13th Advanced Heterostructures and Nanostructures Workshop　2008/12/07

Control Theory of CC-MCML for Stable Operation under Fluctuation of the Threshold voltage Invited Peer-reviewed

Tetsuo Endoh, Masashi Kamiyanagi

IEICE Trans. Electron, Special Issue on Fundamentals and Applications of Advanced Semiconductor Devices　36　2008/12

High-Gain MCML typ“Novel Concept Dynamic Feedback MCML Technique for High-Speed and e Latch Peer-reviewed

Tetsuo Endoh, Masashi Kamiyanagi

IEICE Trans. Electron, Special Issue on Fundamentals and Applications of Advanced Semiconductor Devices　2008/12

Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source Peer-reviewed

Hideki Nakazawa, Yuhki Asai, Takeshi Kinoshita, Maki Suemitsu, Toshimi Abe, Kanji Yasui, Takashi Itoh, Tetsuo Endoh, Yuzuru Narita, Atsushi Konno, Yoshiharu Enta, Masao Mashita

JAPANESE JOURNAL OF APPLIED PHYSICS　47　(11)　8491-8497　2008/11

DOI： 10.1143/JJAP.47.8491 　

ISSN： 0021-4922

eISSN： 1347-4065

New Fabrication Technology of 50nm Silicon Pillar with Roundness for Vertical MOSFETs Peer-reviewed

E. Nishimura, C. Kato, K. Yatsuda, T. Endoh

21st International Microprocesses and Nanotechnology Conference　29C-7-5　2008/10/27

レーザーアブレーション法によるSi添加DLC膜の原子状水素エッチング Peer-reviewed

中澤日出樹, 杉田寛臣, 遠田義晴, 末光眞希, 安井寛治, 伊藤 隆, 遠藤哲郎, 成田 克, 真下正夫

第２２回 ダイヤモンドシンポジウム　2008/10/22

Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor Peer-reviewed

Kousuke Tanaka, Tetsuo Endoh

The 1st Student Organizing International Mini-Conference on Information Electronics Systems　2008/10/16

Temperature Oscillation as a Real-Time Monitoring of the Growth of 3C-SiC on Si Substrate Peer-reviewed

Eiji Saito, Atsushi Konno, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, Yuzuru Narita, Maki Suemitsu

Applied Surface Science　254　6235-6237　2008/10/01

DOI： 10.1016/j.apsusc.2008.02.190 　

原子状水素によるSi添加DLC膜のエッチング Peer-reviewed

三浦創史, 中澤日出樹, 杉田寛臣, 遠田義晴, 末光眞希, 安井寛治, 伊藤隆, 遠藤哲郎, 成田克, 真下正夫

応用物理学関係連合講演会　2008/09/03

Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions Peer-reviewed

Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Haruhiro Hasegawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

APPLIED PHYSICS EXPRESS　1　(9)　091301-1-091301-3　2008/09

DOI： 10.1143/APEX.1.091301 　

ISSN： 1882-0778

Fabrication of a Standby-Power-Free TMR-Based Nonvolatile Memory-in-Logic Circuit Chip with a Spin-Injection Write Scheme Peer-reviewed

Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

International Conference on Solid State Devices and Materials　C3　(6)　274-275　2008/09

Evaluation technique of SONOS type MOS diode for future nonvolatile memory Peer-reviewed

Fumitaka Iga, Tetsuo Endoh

２００８ TOHOKU-SECTION JOINT CONVENTION RECORD OF INSTITUES OF ELECTRICAL AND INFORMATION ENGINEERS JAPAN　2008/08/23

Mechanism of Self-Heating Phenomena in Si Nano Wire MOS Transistor Peer-reviewed

Tetsuo Endoh, Kousuke Tanaka, Yuto Norifusa

2008 TOHOKU-SECTION JOINT CONVENTION RECORD OF INSTITUTES OF ELECTRICAL AND INFOMATION ENGINEERS JAPAN　2008/08/20

Control Theory of CC-MCML for Stable Operation under Fluctuation of the Threshold voltage Peer-reviewed

Masashi Kamiyanagi, Tetsuo Endoh

2008 TOHOKU-SECTION JOINT CONVENTION RECORD OF ELECTRICAL AND INFOMATION ENGINEERS JAPAN　2008/08/20

Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor Peer-reviewed

Tetsuo Endoh, Kousuke Tanaka, Yuto Norifusa

2008 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices　5A　(1)　101-105　2008/07/09

ISSN： 0913-5685

Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

2008 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices　5A　(2)　594-597　2008/07/09

Impact of 180nm Current Controlled MCML for realizing stable circuit operations under threshold voltage fluctuations Peer-reviewed

Masashi Kamiyanagi, Yuto Norifusa, Tetsuo Endoh

2008 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices　7B　(2)　233-238　2008/07/09

Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop Peer-reviewed

Tetsuo Endoh, Masashi Kamiyanagi

2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices　ED2008　(82)　227-231　2008/07/09

ISSN： 0913-5685

メッシュ状金属キャタライザを用いたGaN結晶のエピタキシャル成長 Invited Peer-reviewed

安井寛治, 末光眞希, 遠藤哲郎, 伊藤隆, 中澤日出樹, 成田克, 高田雅介, 赤羽正志

第5回Cat-CVD研究会　2008/06/20

Hot-mesh CVD法を用いた原料ガスパルス供給によるGaN成長 Peer-reviewed

小前泰彰, 齋藤健, 末光眞希, 遠藤哲郎, 伊藤隆, 中澤日出樹, 成田克, 高田雅介, 赤羽正志, 安井寛治

第5回Cat-CVD研究会　2008/06/20

パルスモードホットメッシュCVD法による窒化物半導体のエピタキシャル成長 Peer-reviewed

小前泰彰, 齋藤健, 末光眞希, 伊藤隆, 遠藤哲郎, 中澤日出樹, 成田克, 高田雅介, 安井寛治, 赤羽正志

第5回Cat-CVD研究会　2008/06/20

High Performance Multi-Nano-Pillar Type Vertical MOSFET Scaling to 15nm Node Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

2008 International Meeting for Future Electron Devices　A-3　27-28　2008/05/22

触媒反応CVD (Cat-CVD) 法によるGaN結晶膜の省資源成長技術 Peer-reviewed

安井寛治, 深田祐介, 安部和貴, 黒木雄一郎, 末光眞希, 伊藤 隆, 成田 克, 遠藤哲郎, 中澤日出樹, 高田雅介, 赤羽正志

電子情報通信学会2008年総合大会　エレクトロニクス講演論文集2　(C-6-8)　26-27　2008/03/20

Epitaxial growth of SiC on Silicon on Insulator substrates with ultrathin top Si layer using hot-mesh chemical vapor deposition Peer-reviewed

47　(1)　669-672　2008/01/22

DOI： 10.1143/JJAP.47.569 　

Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium-coated tungsten mesh Peer-reviewed

Yusuke Fukada, Kanji Yasui, Yuichiro Kuroki, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

JAPANESE JOURNAL OF APPLIED PHYSICS　47　(1)　573-576　2008/01

DOI： 10.1143/JJAP.47.573 　

ISSN： 0021-4922

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD Peer-reviewed

Kazuyuki Tamura, Yuichiro Kuroki, Kanji Yasui, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane

THIN SOLID FILMS　516　(5)　659-662　2008/01

DOI： 10.1016/j.tsf.2007.06.200 　

ISSN： 0040-6090

eISSN： 1879-2731

TMR-Logic-Based LUT for Quickly Wake-up FPGA Peer-reviewed

Daisuke Suzuki, Tetsuo Endoh, Takahiro Hanyu

2008 51ST MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2　326-+　2008

DOI： 10.1109/MWSCAS.2008.4616802 　

ISSN： 1548-3746

ホットメッシュCVD法によるGaN成長－ルテニウムタングステンメッシュの効果－ Peer-reviewed

深田祐介, 安部和貴, 黒木雄一郎, 末光眞希, 伊藤 隆, 成田 克, 遠藤哲郎, 中澤日出樹, 高田雅介, 安井寛治, 赤羽正志

電子情報通信学会技術研究報告 (電子部品・材料研究会)　107　(325)　55-58　2007/11/16

Ru コートWを用いた Hot-mesh CVD法によるGaN膜成長 Peer-reviewed

深田祐介, 小前泰彰, 黒木雄一郎, 末光眞希, 伊藤隆, 成田克, 遠藤哲郎, 中澤日出樹, 高田雅介, 安井寛治, 赤羽正志

電子情報通信学会2007ソサイエティ大会　エレクトロニクス講演論文集2　(C-6-9)　17　2007/09/11

ISSN： 1349-1369

Mechnism of Asymmetric Temperature Distribution of Si Nano Wire with Self-Heating Peer-reviewed

田中幸介, 遠藤哲郎

平成19年度 電気関連学会東北支部連合大会 講演論文集　1A13　13-13　2007/08

Device Design Technology for 30nm FINFETs with Halo Structure Peer-reviewed

則房勇人, 遠藤哲郎

平成19年度 電気関連学会東北支部連合大会 講演論文集　1A14　14-14　2007/08

The exclusive OR using MOS Current Mode Logic Circuit Peer-reviewed

鈴木一光, 遠藤哲郎

平成19年度 電気関連学会東北支部連合大会 講演論文集　1A15　15-15　2007/08

Device Design Technology for 30nm FINFETs with Halo Structure Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

電気関連学会東北支部連合大会　14　14　2007/08

ルテニウム担持したタングステンHot-mesh CVD法によるGaN成長 Peer-reviewed

深田祐介, 小前泰彰, 黒木雄一郎, 末光眞希, 伊藤 隆, 成田克, 遠藤哲郎, 中澤日出樹, 高田雅介, 安井寛治, 赤羽正志

第４回Cat-CVD研究会　53-56　2007/06/29

Decomposition characteristics of NH3 by ruthenium coated tungsten hot-mesh for the growth of nitride semiconductor films Peer-reviewed

Y.Fukada, Y.Kuroki, K.Yasui, M.Suemitsu, T.Ito, T.Endoh, H.Nakazawa, Y.Narita, M.Takata, T.Akahane

2007 Int. Symp. on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2007)　2-36　2007/06/20

Study of self-heating in Si nano structure for floating body-surround gate transistor with high-k dielectric films Peer-reviewed

Tetsuo Endoh, Kousuke Tanaka

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　46　(5 B)　3189-3192　2007/05/17

DOI： 10.1143/JJAP.46.3189 　

ISSN： 0021-4922 1347-4065

Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films Peer-reviewed

Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi

IEICE TRANSACTIONS ON ELECTRONICS　E90C　(5)　955-961　2007/05

DOI： 10.1093/ietele/e90-c.5.955 　

ISSN： 0916-8524

eISSN： 1745-1353

Study of 30-nm double-gate MOSFET with Halo implantation technology using a two-dimensional device simulator Peer-reviewed

Tetsuo Endoh, Yuto Momma

IEICE TRANSACTIONS ON ELECTRONICS　E90C　(5)　1000-1005　2007/05

DOI： 10.1093/ietele/e90-c.5.1000 　

ISSN： 0916-8524

eISSN： 1745-1353

Study of self-heating in si nano structure for floating body-surround gate transistor with high-k dielectric films Peer-reviewed

Tetsuo Endoh, Kousuke Tanaka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　46　(5B)　3189-3192　2007/05

DOI： 10.1143/JJAP.46.3189 　

ISSN： 0021-4922

Effects of Threshold Voltage Fluctuations on Stability of MOS Current Mode Logic Inverter Circuit Peer-reviewed

Kazuhiro Suzuki, Hyoung-jun Na, Yuzuru Narita, Hideki Nakazawa, Takashi Itoh, Kanji Yasui, Maki Suemitsu, Tetsuo Endoh

IMFEDK2007 technical digest　2007/04

Analysis of the Dependency of Body Thickness on the Performance of the Nano-Scale Vertical MOSFET Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

IMFEDK2007 technical digest　25-26　2007/04

50.Effects of Threshold Voltage Fluctuations on Stability of MOS Current Mode Logic Inverter Circuit Peer-reviewed

Kazuhiro Suzuki, Hyoung-jun Na, Yuzuru Narita, Hideki, Nakazawa, Takashi Itoh, Kanji Yasui, Maki Suemitsu, Tetsuo Endoh

IEEE, IMFEDK2007 technical digest　B-7　2007/04

51.Analysis of the Dependency of Body Thickness on the Performance of the Nano-Scale Vertical MOSFET Peer-reviewed

Yuto Norifusa, Tetsuo Endoh

IEEE, IMFEDK2007 technical digest　A-3　2007/04

Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(110) Grown with Monomethylsilane Peer-reviewed

Yuzuru Narita, Atsushi Konno, Hideki Nakazawa, Takashi Itoh, Kanji Yasui, Tetsuo Endoh, Maki Suemitsu

Japanese Journal of Applied Physics　46　(2)　L40-L42　2007/02/01

DOI： 10.1143/JJAP.46.L40 　

ホットメッシュCVD法によるGaN成長---ルテニウムコーティッドタングステンメッシュの効果 Peer-reviewed

深田祐介, 安部和貴, 黒木雄一郎, 末光眞希, 伊藤 隆, 成田 克, 遠藤哲郎, 中澤日出樹, 高田雅介, 安井寛治, 赤羽正志

信学技報　2007

Floating gate B4-flash memory technology utilizing novel programming scheme - Highly scalable, efficient and temperature independent programming Peer-reviewed

S. Shukuri, N. Ajika, M. Mihara, Y. Kawajiri, T. Ogura, K. Kobayashi, T. Endoh, M. Nakashima

2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP　30-+　2007

DOI： 10.1109/NVSMW.2007.4290568 　

Study of Self-Heating in Si Nano Structure for FB-SGT with High-k Dielectric Films Peer-reviewed

Tetsuo Endoh, Kousuke Tanaka

2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)　115-116　2006/11

Study of Self-Heating in NANO Wire Peer-reviewed

田中幸介, 遠藤哲郎

平成18年度 電気関連学会東北支部連合大会 講演論文集　2A04　22-22　2006/08

Effect of Supply Voltage Fluctuations on Stability of Inverter Ciruit of MOS Current Mode Logic Peer-reviewed

鈴木一光, 羅炯竣, 遠藤哲郎

平成18年度 電気関連学会東北支部連合大会 講演論文集　2A05　23-23　2006/08

Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology Peer-reviewed

Yuto Monma, Tetsuo Endoh

2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD 2006)　229-232　2006/07

The Guideline of Tolerable Vth Fluctuation for MCML (MOS Current Mode Logic) Inverter Circuit Peer-reviewed

Hyoung-jun NA, Maki SUEMITSU, Tetsuo EDNDO

2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD 2006)　233-236　2006/07

Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films Peer-reviewed

T.Endoh, K.Hirose, K.Shiroisi

2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD 2006)　106　(137)　271-276　2006/07

ISSN： 0913-5685

Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)-2 x 1 surface Peer-reviewed

Y Narita, T Murata, A Kato, T Endoh, M Suemitsu

THIN SOLID FILMS　508　(1-2)　200-202　2006/06

DOI： 10.1016/j.tsf.2005.08.400 　

ISSN： 0040-6090

A 60nm NOR Flash Memory Cell Technology Utilizing Back Bias Assisted Band-to-Band Tunneling Induced Hot-Electron Injection (B4-Flash) Peer-reviewed

S.Shukuri, N.Ajika, M.Mihara, K.Kobayashi, T. Endoh, M.Nakashima

2006 Symposium on VLSI Technology Digest of Technical Papers　20-21　2006/05

次世代シリコン集積回路に求められる新構造デバイス技術 Invited Peer-reviewed

遠藤哲郎

21世紀COE「原子論的生産技術の創出拠点」ワークショップ 次世代半導体デバイス開発における計算科学の現状と将来　2006/05

Study of Effect of Halo Implantation on Nano-Scale Double Gate MOSFET Peer-reviewed

Yuto Momma, Tetsuo Endoh

International Symposium on Bio- and Nano- Electronics　Abstracts P-37　119-120　2006/04

Study of Stability on MCML (MOS Current Mode Logic) Inverter Circuit to Threshold Voltage Fluctuations Caused in Future Nanoscale Si-MOS Process Generation Peer-reviewed

H.-j. Na, M. Suemitsu, T. Endoh

International Symposium on Bio- and Nano-Electronics　Abstracts P-39　123-124　2006/04

次世代シリコン集積回路に求められる新構造デバイス技術 Invited Peer-reviewed

遠藤哲郎, 大塚文雄, 奈良安雄, 安平光雄, 有門経敏

2006年春季第53回応用物理学関係連合講演会「超高速・低消費電力トランジスタを実現する結晶材料・プロセス・デバイス技術」　ZF-2　24-24　2006/04

MCMLインバーター回路の安定性に対するしきい値ばらつきの影響に関する検討

羅炯竣, 田中幸介, 門間優太, 末光眞希, 遠藤哲郎

2006年春季第53回応用物理学関係連合講演会　23a-X-5　2006/04

100nmゲート長30nmボディSiのダブルゲートMOSFETにおけるhaloI/Iの効果に関する検討

門間優太, 遠藤哲郎

2006年春季第53回応用物理学関係連合講演会　25p-X-16　2006/04

Low-temperature heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane Peer-reviewed

Atsushi Konno, Yuzuru Narita, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, Maki Suemitsu

ECS Transactions　3　(5)　449-455　2006

DOI： 10.1149/1.2357236 　

ISSN： 1938-5862 1938-6737

Study of Effect of Halo Implantation on 30nm Ultra Thin Body Si Double-Gate MOSFET with 100nm Gate Length Peer-reviewed

Yuto Momma, Tetsuo Endoh

平成17年度 電気関連学会東北支部連合大会 講演論文集　2A17　30-30　2005/08

Effect of Threshold Voltage Fluctuations on Stability of Inverter Circuit of MOS Current Mode Logic Peer-reviewed

H.-j. Na, K. Tanaka, Y. Momma, M. Suemitsu, T. Endoh

平成17年度 電気関係学会東北支部連合大会 講演論文集　2A18　31-31　2005/08

10nmCMOSに向けた40nmデザインルールによる学独連携相乗りマスク製作 Peer-reviewed

山田啓作, 知京豊裕, 遠藤哲郎, 岩井洋

シンポジューム 「来るべきナノCMOS時代に向けての挑戦とその課題」（IEEE、EDS,電気学会、電子情報通信学会、JST,応用物理学会共催）　2005/04

Ge-dot formation on Si(111)-7 x 7 surface with C predeposition using monomethylsilane Peer-reviewed

Y Narita, M Sakai, T Murata, T Endoh, M Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(1-7)　L123-L125　2005

DOI： 10.1143/JJAP.44.L123 　

ISSN： 0021-4922

High-performance buried-gate surrounding gate transistor for future three-dimensional devices Peer-reviewed

M Iwai, Y Yamamoto, R Nishi, H Sakuraba, T Endoh, F Masuoka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　43　(10)　6904-6906　2004/10

DOI： 10.1143/JJAP.43.6904 　

ISSN： 0021-4922

An analysis of program and erase mechanisms for Floating Channel Type Surrounding Gate Transistor Flash memory cells Peer-reviewed

M Hioki, H Sakuraba, T Endoh, F Masuoka

IEICE TRANSACTIONS ON ELECTRONICS　E87C　(9)　1628-1635　2004/09

ISSN： 0916-8524

eISSN： 1745-1353

New Three-Dimensional High-Density Stacked-Surrounding Gate Transistor (S-SGT) flash memory architecture using self-aligned interconnection fabrication technology without photolithography process for tera-bits and beyond Peer-reviewed

H Sakuraba, K Kinoshita, T Tanigami, T Yokoyama, S Horii, M Saitoh, K Sakiyama, T Endoh, F Masuoka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　43　(4B)　2217-2219　2004/04

DOI： 10.1143/JJAP.43.22.2217 　

ISSN： 0021-4922

Novel NAND DRAM with surrounding gate transistor (SGT)-type gain cell Peer-reviewed

H Nakamura, T Endoh, H Sakuraba, F Masuoka

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS　87　(7)　1-8　2004

DOI： 10.1002/ecjb.10198 　

ISSN： 8756-663X

Pillar Diameter Dependence of the Carrier Response Time in a Surrounding Gate type MOS Capacitor Peer-reviewed

M. Iwai, H. Ohta, M. Suzuki, H. Sakuraba, T. Endoh, F. Masuoka

The Electrochemical Society (204th)　Abs#144　2003/10

High Performance Buried Gate Transistor (BG-SGT) for Future Three-Dimensional Devices Peer-reviewed

M. Iwai, Y. Yamamoto, R. Nishi, H. Sakuraba, T. Endoh, F. Masuoka

Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials　630-631　2003/09

New Three Dimensional High Density S-SGT Flash Memory Architecture using Self-Aligned Interconnection Fabricating Technology without Photo Lithography Process for Tera Bits and Beyond Peer-reviewed

H. Sakuraba, K. Kinoshita, T. Tanigami, T. Yokoyama, S. Horii, M. Saitoh, K. Sakiyama, T. Endoh, F. Masuoka

Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials　642-643　2003/09

Surrounding Gate Transistor (SGT)型ゲインセルを用いた新しいNAND DRAM Peer-reviewed

中村広記, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会論文誌C　Vol.J86-C　(No.8)　944-951　2003/08

Reduction of Pass-Gate Leakage by Silicon Thickness Thinning in Double-Gate MOSFETs Peer-reviewed

W. Sakamoto, T. Endoh, H. Sakuraba, F. Masuoka

Electrochemical Society Proceedings　Vol. 2003-05　331-336　2003/04

Novel ultrahigh-density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell Peer-reviewed

T Endoh, K Kinoshita, T Tanigami, Y Wada, K Sato, K Yamada, T Yokoyama, N Takeuchi, K Tanaka, N Awaya, K Sakiyama, F Masuoka

IEEE TRANSACTIONS ON ELECTRON DEVICES　50　(4)　945-951　2003/04

DOI： 10.1109/TED.2003.809429 　

ISSN： 0018-9383

Buried Gate型SGTフラッシュメモリ Peer-reviewed

岩井信, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会総合大会講演論文集, エレクトロニクス2　C-11-4　64-64　2003/03

Surrounding Gate Transister (SGT) DRAMセルのソフトエラー現象の解析 Peer-reviewed

松岡史宜, 日置雅和, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会総合大会講演論文集, エレクトロニクス2　C-11-3　(2)　63-63　2003/03

３次元構造型Surrounding Gate Transistor (SGT)の下部拡散層形状の解析方法の提案 Peer-reviewed

山本安衛, 日置雅和, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会総合大会講演論文集, エレクトロニクス2　C-11-8　(2)　68-68　2003/03

New Stacked-Surrounding Gate Transistor (S-SGT) Structured Cell For Future Ultra High Density Flash Memory Invited Peer-reviewed

T. Endoh, K. Kinoshita, T. Tanigami, Y. Wada, K. Sato, K. Yamada, T. Yokoyama, N. Takeuchi, K. Tanaka, N. Awaya, K. Sakiyama, F. Masuoka

International Semiconductor Technology Conference ISTC 2002 Meeting Abstracts and Program　Abstract NO.39　2002/09

Double Gate-SOI (DG-SOI) MOSFET のソフトエラーのα粒子入射軌道依存性

松岡史宜, 日置雅和, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2002年エレクトロニクスソサイエティ大会講演論文集2　C-11-4　61-61　2002/09

Si柱側壁表面の平滑化

岩井信, 太田人嗣, 鈴木正彦, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2002年エレクトロニクスソサイエティ大会講演論文集2　C-11-5　62-62　2002/09

Stacked - SGT DRAMを用いた2.4F2メモリセル技術

鈴木正彦, 岩井信, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2002年エレクトロニクスソサイエティ大会講演論文集2　C-11-6　63-63　2002/09

ULSI用超低消費電力CMOS降圧回路 Peer-reviewed

須永和久, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会集積回路研究専門委員会平成14年3月研究会, 信学技報　VLD2001-156　(ICD2001-231)　73-78　2002/03

高電流利用効率を実現したCMOS降圧回路の直流特性 Peer-reviewed

須永和久, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2002年総合大会講演論文集 エレクトロニクス２　C-11-1　73-73　2002/03

Surrounding Gate Transistorにおける基板バイアス効果の拡散層形状依存性 Peer-reviewed

西亮輔, 鈴木正彦, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2002年総合大会講演論文集 エレクトロニクス２　C-11-3　(2)　75-75　2002/03

Multi-Pillar Surrounding Gate型MOSキャパシタの試作プロセス Peer-reviewed

岩井信, 太田人嗣, 鈴木正彦, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2002年総合大会講演論文集 エレクトロニクス２　C-11-4　(2)　76-76　2002/03

Double Gate-SOI(DG-SOI)MOSFETにおけるソフトエラー現象の解析 Peer-reviewed

松岡史宜, 日置雅和, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2002年総合大会講演論文集 エレクトロニクス２　C-11-5　(2)　77-77　2002/03

Floating Channel type SGT(FC-SGT)フラッシュメモリにおけるカップリング比の柱半径依存性 Peer-reviewed

日置雅和, 遠藤哲郎, マルクス レンスキ, 桜庭弘, 舛岡富士雄

電子情報通信学会2002年総合大会講演論文集 エレクトロニクス２　C-11-6　(2)　78-78　2002/03

A Stacked-Surrounding Gate Transistor (S-SGT) Structured Cellを用いた新しい高密度フラッシュメモリ Peer-reviewed

木下和司, 遠藤哲郎, 谷上拓司, 和田昌久, 佐藤功太, 山田和也, 横山敬, 竹内昇, 田中研一, 栗屋信義, 﨑山恵三, 舛岡富士雄

電子情報通信学会シリコン材料・デバイス研究会,信学技報　SDM2001-219　(573)　43-48　2002/01

ISSN： 0913-5685

New three dimensional (3D) memory array architecture for future ultra high density DRAM (invited) Invited Peer-reviewed

F. Masuoka, T. Endoh, H. Sakuraba

ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems　C015-1-C015-5　2002

DOI： 10.1109/ICCDCS.2002.1004003 　

Influence of silicon wafer loading ambient on chemical composition and thickness uniformity of sub-5-nm-thick oxide films Peer-reviewed

T Endoh, Y Kimura, M Lenski, F Masuoka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　40　(12)　7023-7028　2001/12

DOI： 10.1143/JJAP.40.7023 　

ISSN： 0021-4922

SGTの基板バイアス効果を抑制させる拡散層形状に関する解析 Peer-reviewed

西亮輔, 鈴木正彦, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会論文誌C　Vol. J84-C　(No.10)　1018-1019　2001/10

ISSN： 1345-2827

超低消費電力降圧回路の試作

須永和久, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2001年エレクトロニクスソサイエティ大会講演論文集2　C-11-2　56-56　2001/09

Floating Channel type SGT (FC-SGT) フラッシュメモリにおける書込・消去特性のフローティングゲート膜厚依存性

日置雅和, 遠藤哲郎, マルクスレンスキ, 桜庭弘, 舛岡富士雄

電子情報通信学会2001年エレクトロニクスソサイエティ大会講演論文集2　C-11-4　58-58　2001/09

0.4μmMOSプロセス技術を用いたMulti-Pillar Surrounding Gate 型 MOS キャパシタ

岩井信, 太田人嗣, 鈴木正彦, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2001年エレクトロニクスソサイエティ大会講演論文集2　C-11-5　59-59　2001/09

Surrounding Gate Transistor における基板バイアス効果を抑制するためのソース・ドレインエンジニアリング

西亮輔, 鈴木正彦, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会2001年エレクトロニクスソサイエティ大会講演論文集2　C-11-6　60-60　2001/09

2.4F(2) memory cell technology with stacked-surrounding gate transistor (S-SGT) DRAM Peer-reviewed

T Endoh, M Suzuki, H Sakuraba, F Masuoka

IEEE TRANSACTIONS ON ELECTRON DEVICES　48　(8)　1599-1603　2001/08

DOI： 10.1109/16.936567 　

ISSN： 0018-9383

Influence of Silicon Wafer Loading Conditions on Thickness Uniformity of Sub-5nm-Thick Oxide Films Peer-reviewed

M. Lenski, Y. Kimura, M. Iwai, H. Sakuraba, T. Endoh, F. Masuoka

2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD 2001)　101　(163)　25-28　2001/07

ISSN： 0913-5685

Multi-Pillar Surrounding Gate Transistor (M-SGT) type MOS Capacitor Using 0.4μm MOS Technology Peer-reviewed

M. Iwai, H. Ohta, M. Suzuki, H. Sakuraba, T. Endoh, F. Masuoka

2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD 2001)　257-261　2001/07

Novel S/D Engineering of Surrounding Gate Transistor (SGT) for Suppressing Substrate Bias Effect Peer-reviewed

R. Nishi, M. Suzuki, H. Sakuraba, T. Endoh, F. Masuoka

2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD 2001)　101　(161)　263-266　2001/07

ISSN： 0913-5685

0.18-mu m CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation Peer-reviewed

A Tanabe, M Umetani, Fujiwara, I, T Ogura, K Kataoka, M Okihara, H Sakuraba, T Endoh, F Masuoka

IEEE JOURNAL OF SOLID-STATE CIRCUITS　36　(6)　988-996　2001/06

DOI： 10.1109/4.924861 　

ISSN： 0018-9200

Technology Trend of Flash Memory Invited Peer-reviewed

F. Masuoka, T. Endoh

Proceedings of the ECS 1st International Conference on Semiconductor Technology (ISTC 2001)　1-10　2001/05

Cell Array Design of Stacked-Surrounding Gate Transistor (S-SGT) DRAM for Small Array Noise and Ultra-High Density DRAM Peer-reviewed

T. Endoh, H. Nakamura, H. Sakuraba, F. Masuoka

Proceedings of the ECS 1st International Conference on Semiconductor Technology (ISTC 2001)　23-31　2001/05

Influence of Wafer Loading Atmosphere upon Chemical Structure of Sub-5nm Oxide Films Peer-reviewed

T. Endoh, Y. Kimura, M. Lenski, H. Sakuraba, F. Masuoka

Proceedings of the ECS 1st International Conference on Semiconductor Technology (ISTC 2001)　196-200　2001/05

New Body Contact Type Pass-Transistor Peer-reviewed

遠藤哲郎, 船木寿彦, 中村広記, 桜庭弘, 舛岡富士雄

THE TRANSACTIONS OF THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS C　J84-C　(3)　192-198　2001/03

ISSN： 1345-2827

高集積化を実現するFloating Channel type SGT (FC-SGT) Flashメモリセルのビットライン形成法 Peer-reviewed

岩井信, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2001年総合大会講演論文集 エレクトロニクス２　C-11-5　(2)　87-87　2001/03

Floating Channel type SGT (FC-SGT)フラッシュメモリにおける書込・消去特性の柱半径依存性 Peer-reviewed

日置雅和, 遠藤哲郎, レンスキマルクス, 桜庭弘, 舛岡富士雄

電子情報通信学会2001年総合大会講演論文集 エレクトロニクス２　C-11-6　(2)　88-88　2001/03

高信号を実現する三次元階層型メモリアレイ技術を用いたStacked-SGT DRAM Peer-reviewed

中村広記, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2001年総合大会講演論文集 エレクトロニクス２　C-11-7　(2)　89-89　2001/03

超低消費電力を指向したオンチップ用CMOS降圧回路 Peer-reviewed

須永和久, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2001年総合大会講演論文集 エレクトロニクス２　C-11-9　91-91　2001/03

Double Gate MOSFETの新しい構造と試作プロセスの提案 Peer-reviewed

山下弘臣, 遠藤哲郎, 岩井信, 桜庭弘, 舛岡富士雄

電子情報通信学会2001年総合大会講演論文集 エレクトロニクス２　C-11-10　(2)　92-92　2001/03

Full Adder Using New Body Contact Type Pass-Transistor Peer-reviewed

遠藤哲郎, 中村広記, 船木寿彦, 桜庭弘, 舛岡富士雄

THE TRANSACTIONS OF THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS C　J84-C　(2)　158-159　2001/02

ISSN： 1345-2827

An on-chip 96.5 % current efficiency CMOS linear regulator Peer-reviewed

K Sunaga, T Endoh, H Sakuraba, F Masuoka

PROCEEDINGS OF THE ASP-DAC 2001: ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE 2001　297-301　2001

DOI： 10.1109/ASPDAC.2001.913322 　

A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films Invited Peer-reviewed

T Endoh

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS　958-963　2001

DOI： 10.1109/ICSICT.2001.982054 　

Novel ultra high density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell Peer-reviewed

Tetsuo Endoh, Kazushi Kinoshita, Takuji Tanigami, Yoshihisa Wada, Kota Sato, Kazuya Yamada, Takashi Yokoyama, Noburo Takeuchi, Kenichi Tanaka, Nobuyoshi Awaya, Keizou Sakiyama, Fujio Masuoka

Technical Digest - International Electron Devices Meeting　33-36　2001

DOI： 10.1109/IEDM.2001.979396 　

ISSN： 0163-1918

An on-chip 96.5% current efficiency CMOS linear regulator using a flexible control technique of output current Peer-reviewed

T Endoh, K Sunaga, H Sakuraba, F Masuoka

IEEE JOURNAL OF SOLID-STATE CIRCUITS　36　(1)　34-39　2001/01

DOI： 10.1109/4.896226 　

ISSN： 0018-9200

Analytical modeling of stress-induced leakage currents in 5.1-9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling Peer-reviewed

M Lenski, T Endoh, F Masuoka

JOURNAL OF APPLIED PHYSICS　88　(9)　5238-5245　2000/11

DOI： 10.1063/1.1312842 　

ISSN： 0021-8979

低Bit Line 容量を実現する三次元階層型メモリアレイ技術を用いたStacked-SGT DRAM

中村広記, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-1　(2)　69-69　2000/09

Stacked-SGT DRAM のセルデザインの提案

鈴木正彦, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-2　(2)　70-70　2000/09

Surrounding Gate Transistor (SGT) DRAM のソフトエラー耐性に関する考案

松岡史宜, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-3　(2)　71-71　2000/09

Floating Channel type SGT (FC-SGT) Flash メモリセルにおけるフローティングチャネル形成プロセス

岩井信, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-6　(2)　74-74　2000/09

Floating Channel type SGT (FC-SGT) フラッシュメモリにおける消去動作の解析

日置雅和, 遠藤哲郎, レンスキマルクス, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-7　(2)　75-75　2000/09

部分空乏型および完全空乏型SOI MOSFET の過渡応答

坂本渉, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-9　(2)　77-77　2000/09

Multi-Pillar Surrounding Gate Transistorの高速動作に関する解析

太田人嗣, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-11　79-79　2000/09

GHz 動作における拡散層－拡散層間クロストークの解析

三浦雅和, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-11-12　80-80　2000/09

超高電流利用率を実現したULSI用降圧回路

須永和久, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年エレクトロニクスソサイエティ大会講演論文集2　C-12-9　89-89　2000/09

FLASHメモリ技術動向と将来 Invited Peer-reviewed

舛岡富士雄, 遠藤哲郎

電子情報通信学会集積回路研究会, 信学技報　ICD2000-12　19-24　2000/06

0.2μm nMOSFET using EB Exposure for All Lithography Processes Peer-reviewed

I. Fujiwara, H. Sakuraba, M. Umetani, T. Ogura, K. Kataoka, A. Tanabe, T. Endoh, F. Masuoka

PROCEEDINGS 2000 22nd INTERNATIONAL CONFERENCE ON MICROELECTRONICS　2　439-442　2000/05

New Three Dimensional (3D) Memory Array Architecture For Future Ultra High Density DRAM Peer-reviewed

T. Endoh, H. Sakuraba, K. Shinmei, F. Masuoka

PROCEEDINGS 2000 22nd INTERNATIONAL CONFERENCE ON MICROELECTRONICS　Vol. 2　447-450　2000/05

The 1.44F2 Memory Cell Technology with the Stacked-Surrounding Gate Transistor (S-SGT) DRAM Peer-reviewed

T. Endoh, H. Sakuraba, K. Shinmei, F. Masuoka

PROCEEDINGS 2000 22nd INTERNATIONAL CONFERENCE ON MICROELECTRONICS　Vol. 2　451-454　2000/05

均一な厚さの極薄シリコン酸化膜を形成するための酸化炉搬入方法 Peer-reviewed

木村康隆, 遠藤哲郎, レンスキマルクス, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-11-3　(2)　82-82　2000/03

Floating Channel type SGT (FC-SGT) Flash メモリの試作プロセスの提案 Peer-reviewed

岩井信, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-11-8　(2)　87-87　2000/03

Floating Channel type (FC-SGT) Flash メモリにおける書込・消去特性の数値的解析 Peer-reviewed

日置雅和, 遠藤哲郎, レンスキマルクス, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-11-9　(2)　88-88　2000/03

高速動作・低消費電力 M-SGT 試作プロセスの提案 Peer-reviewed

太田人嗣, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-11-11　90-90　2000/03

Stacked-SGT DRAM を用いた2.4F2メモリセル技術 Peer-reviewed

鈴木正彦, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-11-12　91-91　2000/03

理想的なSファクタを実現する完全空乏型 Double-Gate SOI MOSFET のスケーリング理論 Peer-reviewed

森雅朋, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-11-15　(2)　94-94　2000/03

超低消費電力を指向したULSI用降圧回路 Peer-reviewed

須永和久, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-12-20　115-115　2000/03

三次元階層型メモリアレイ技術を用いたStacked-SGT DRAM のアレイ構成及び読み出し方法 Peer-reviewed

中村広記, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会2000年総合大会講演論文集 エレクトロニクス２　C-12-73　(2)　168-168　2000/03

A 10 Gb/s Demultiplexer IC in 0.18μm CMOS using Current Mode Logic with Tolerance to the Threshold Voltage Fluctuation Peer-reviewed

A. Tanabe, M. Umetani, I. Fujiwara, T. Ogura, K. Kataoka, M. Okihara, H. Sakuraba, T. Endoh, F. Masuoka

2000 IEEE International Solid-State Circuits Conference (ISSCC) Digest of Technical Papers　62-63　2000/02

Stacked-SGT DRAMを用いた2.4F2メモリセル技術 Peer-reviewed

鈴木正彦, 遠藤哲郎, 桜庭弘, 舛岡富士雄

電子情報通信学会論文誌C　Vol. J83-C　(No.1)　92-93　2000/01

The 2.4F(2) memory cell technology with stacked-surrounding gate transistor (S-SGT) DRAM Peer-reviewed

M Suzuki, T Endoh, H Sakuraba, F Masuoka

2000 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, TECHNICAL PROCEEDINGS　388-391　2000

An analysis of program and erase operation for FC-SGT flash memory cells Peer-reviewed

M Hioki, T Endoh, H Sakuraba, M Lenski, F Masuoka

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES　116-118　2000

A high signal swing pass-transistor logic using surrounding gate transistor Peer-reviewed

T Endoh, T Funaki, H Sakuraba, F Masuoka

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES　273-275　2000

微細MOSFETデバイスの試作に用いる電子線描画に関する研究 Peer-reviewed

片岡耕太郎, 藤原郁夫, 林田茂樹, 小倉孝之, 梅谷正人, 田辺昭, 桜庭弘, 遠藤哲郎, 舛岡富士雄

電子情報通信学会シリコン材料・デバイス研究会, 信学技報　SDM99-160　(457)　35-42　1999/11

ISSN： 0913-5685

Floating Channel Type SGT Flash Memory Peer-reviewed

T. Endoh, M. Hioki, H. Sakuraba, M. Lenski, F. Masuoka

Meeting Abstracts The 1999 Joint International Meeting (196th Meeting of The Electrochemical Society, 1999 Fall Meeting of The Electrochemical Society of Japan with technical cosponsorship of the Japan Society of Applied Physics)　Vol.99-2　(Abstract No.1323)　1999/10

Loadlock Furnace Application to Ultrathin Oxide Films Peer-reviewed

H. Miya, M. Izumi, K. Yuasa, S. Konagata, Y. Kimura, L. Markus, T. Endoh, F. Masuoka, T. Takahagi

7th International Conference on Advanced Thermal Processing of Semiconductors - RTP’99　244-251　1999/09