Details of the Researcher

PHOTO

Takezo Mawaki
Section
New Industry Creation Hatchery Center
Job title
Assistant Professor
Degree

  • 博士（工学）（東北大学）

  • 修士（工学）（東北大学）

e-Rad No.
10966328

Research History 2

  • 2022/07 - Present
    Tohoku University　Faculty of Engineering

  • 2022/04 - Present
    Tohoku University　New Industry Creation Hatchery Center

Education 1

  • Tohoku University　Graduate School of Engineering　Department of Management Science and Technology

    2018/04 - 2022/03

Committee Memberships 1

  • シリコン材料・デバイス研究専門委員会　専門委員

    2022/10 - Present

Research Interests 1

  • 半導体集積回路

Research Areas 2

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Awards 4

  1. 服部健雄賞 ポスター講演

    2023/02　電子デバイス界面テクノロジー研究会（EDIT28）　ランダムテレグラフノイズのMOSトランジスタ構造・動作条件依存性の統計的解析

  2. 専攻長賞

    2022/03　東北大学大学院 工学研究科 技術社会システム専攻

  3. 若手優秀発表賞

    2021/06　電子情報通信学会　IPAを用いた銅・酸化銅上の表面改質

  4. The Encouragement Prize

    2016/12　Dynamic Response of Random Telegraph Noise Time Constants toward Bias Voltage Changing

Papers 12

  1. Adsorption and surface reaction of isopropyl alcohol on SiO2 surfaces Peer-reviewed

    Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai, Shigetoshi Sugawa

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　40　(5)　2022/09

    DOI： 10.1116/6.0002002 　

    ISSN： 0734-2101

    eISSN： 1520-8559

  2. Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes Peer-reviewed

    Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai, Shigetoshi Sugawa

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　39　(1)　013403-013403　2021/01

    DOI： 10.1116/6.0000618 　

    ISSN： 0734-2101

    eISSN： 1520-8559

  3. Analysis of Random Telegraph Noise Behaviers of nMOS and pMOS toward Back Bias Voltage Changing Peer-reviewed

    T. Mawaki, A. Teramoto, R. Kuroda, S. Ichino, S. Sugawa

    Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials　2017/09/22

    Publisher: The Japan Society of Applied Physics

    DOI： 10.7567/ssdm.2017.g-5-03 　

  4. Evaluation of Metal Contamination Behavior on Silicon Wafer Surfaces Rinsed with Deionized Water Containing pg/L-Level Impurities

    Kyohei Tsutano, Takezo Mawaki, Yasuyuki Shirai, Rihito Kuroda

    ECS Transactions　114　(1)　27-33　2024/09/27

    Publisher: The Electrochemical Society

    DOI： 10.1149/11401.0027ecst 　

    ISSN： 1938-5862

    eISSN： 1938-6737

    More details Close

    Two tests were performed to investigate the contamination behavior of bare Si wafers by rinsing them using deionized water (DIW) contaminated with metals at the pg/L-level in a single-wafer cleaning process. First, we found that Al, Ti, Mn, Co, Cu, Sr, and Pb exhibited strong correlations between the metal concentrations in DIW and the wafer surface concentrations under different concentrations in DIW and the same rinse time of 480 min. Second, we observed that the wafer surface concentrations of Al, Ti, Cu, and Pb increased with the rinse time, whereas those of Mn, Co, and Sr were constant at rinse times ranging from 10 to 960 min at metal concentrations of 60 pg/L in DIW. In this test, Cu exhibited a high adsorption ratio on bare Si wafers, even at the pg/L level. These data provide novel insights into wet processes for device manufacturing.

  5. Impedance Measurement Platform for Statistical Capacitance and Current Characteristic Measurements of Arrayed Cells with Atto-order Precision Peer-reviewed

    Koga Saito, Tatsuhiko Suzuki, Hidemi Mitsuda, Tsubasa Nozaki, Takezo Mawaki, Rihito Kuroda

    2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)　1-6　2024/04/15

    Publisher: IEEE

    DOI： 10.1109/icmts59902.2024.10520692 　

  6. A Preliminary Demonstration of High Resolution Proximity Capacitance-Optical Multimodal CMOS Image Sensor Peer-reviewed

    Tsubasa Nozaki, Yoshiaki Watanabe, Chia-Chi Kuo, Koga Saito, Takezo Mawaki, Rihito Kuroda

    Proceedings of the International Display Workshops　1471-1471　2023/12/07

    Publisher: International Display Workshops General Incorporated Association

    DOI： 10.36463/idw.2023.1471 　

    ISSN： 1883-2490

  7. A Study on Measurement and Analysis Technologies of Reactions of Gas Molecules on Solid Surfaces Toward Highly Selective Semiconductor Manufacturing Process

    2022/03

  8. Effect of drain-to-source voltage on random telegraph noise based on statistical analysis of MOSFETs with various gate shapes

    R. Akimoto, R. Kuroda, A. Teramoto, T. Mawaki, S. Ichino, T. Suwa, S. Sugawa

    2020 ieee international reliability physics symposium (IRPS)　2020

    DOI： 10.1109/irps45951.2020.9128341 　

    ISSN： 1541-7026

  9. Statistical Analysis of Threshold Voltage Variation Using MOSFETs With Asymmetric Source and Drain

    Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa

    IEEE Electron Device Letters　39　(12)　1836-1839　2018/12

    DOI： 10.1109/led.2018.2874012 　

    ISSN： 0741-3106

    eISSN： 1558-0563

  10. Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

    Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Hyeonwoo Park, Shunichi Wakashima, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa

    Japanese Journal of Applied Physics　57　(4S)　04FF08-04FF08　2018/03/14

    DOI： 10.7567/jjap.57.04ff08 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  11. Statistical Analyses of Random Telegraph Noise in Pixel Source Follower with Various Gate Shapes in CMOS Image Sensor

    Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Tomoyuki Suwa, Shigetoshi Sugawa

    ITE Transactions on Media Technology and Applications　6　(3)　163-170　2018

    DOI： 10.3169/mta.6.163 　

    ISSN： 2186-7364

    eISSN： 2186-7364

  12. Impact of Drain Current to Appearance Probability and Amplitude of Random Telegraph Noise in Low Noise CMOS Image Sensors Peer-reviewed

    S. Ichino, T. Mawaki, A. Teramoto, R. Kuroda, H. Park, T. Maeda, S. Wakashima, T. Goto, T. Suwa, S. Sugawa

    Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials　2017/09/22

    Publisher: The Japan Society of Applied Physics

    DOI： 10.7567/ssdm.2017.g-5-02 　

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Misc. 16

  1. 大規模アレイテスト回路を用いた半導体素子の電気特性計測技術 ～次世代の半導体メモリ研究を促進する電気特性計測プラットフォームの開発～

    間脇武蔵

    青葉工学振興会機関誌 翠巒　(38)　47-51　2024/01

  2. Statistical measurement of electrical characteristics of functional thin films using impedance measurement platform technology

    齊藤宏河, 鈴木達彦, 光田薫未, 間脇武蔵, 間脇武蔵, 諏訪智之, 寺本章伸, 寺本章伸, 須川成利, 黒田理人, 黒田理人

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

    ISSN： 2758-4704

  3. Statistical measurement of trap characteristics of high capacitance density trench capacitor using current measurement platform

    鈴木達彦, 齊藤宏河, 光田薫未, 間脇武蔵, 間脇武蔵, 須川成利, 黒田理人, 黒田理人

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

    ISSN： 2758-4704

  4. Statistical measurement of HfOx film resistance change using resistance measurement platform

    光田薫未, 鈴木達彦, 齊藤宏河, 間脇武蔵, 間脇武蔵, 須川成利, 黒田理人, 黒田理人

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

    ISSN： 2758-4704

  5. Statistical analysis of random telegraph noise dependence on MOS transistor shapes and drain-to-source voltage Invited

    間脇武蔵, 間脇武蔵, 黒田理人, 黒田理人

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　84th　2023

    ISSN： 2758-4704

  6. Statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform Invited

    間脇武蔵, 間脇武蔵, 黒田理人, 黒田理人

    電子情報通信学会技術研究報告(Web)　123　(211(SDM2023 54-61))　2023

    ISSN： 2432-6380

  7. 次世代メモリ用薄膜の統計的解析を行う高精度・広範囲抵抗測定技術

    光田薫未, 天満亮介, 間脇武蔵, 黒田理人

    電子情報通信学会技術研究報告　122　(215)　5-8　2022/10/19

  8. Modification of states of copper and copper oxide due to IPA treatment

    間脇武蔵, 寺本章伸, 石井勝利, 志波良信, 諏訪智之, 東雲秀司, 清水亮, 梅澤好太, 黒田理人, 白井泰雪, 須川成利

    電子情報通信学会技術研究報告(Web)　121　(71(SDM2021 22-29))　2021

    ISSN： 2432-6380

  9. Statistical analysis of RTN behavior on transistor structures, operating regions, and carrier transport directions

    秋元暸, 黒田理人, 黒田理人, 間脇武蔵, 須川成利

    電子情報通信学会技術研究報告(Web)　121　(212(SDM2021 44-52))　2021

    ISSN： 2432-6380

  10. Analysis of effect of drain-to-source voltage on random telegraph noise by statistical measurement

    秋元瞭, 黒田理人, 黒田理人, 寺本章伸, 寺本章伸, 間脇武蔵, 市野真也, 諏訪智之, 須川成利

    電子情報通信学会技術研究報告(Web)　120　(205(SDM2020 14-21))　2020

    ISSN： 2432-6380

  11. Statistical analysis of electric characteristics variability using MOSFETs with asymmetric source and drain

    市野真也, 寺本章伸, 黒田理人, 間脇武蔵, 諏訪智之, 須川成利, 須川成利

    電子情報通信学会技術研究報告　118　(241)　51-56　2018/10

    ISSN： 0913-5685

  12. 大規模アレイ MOS トランジスタのランダムテレグラフノイズの動作条件依存性に関する研究

    間脇武蔵

    東北大学電通談話会記録　87　(1)　254-255　2018/08

    ISSN： 0385-7719

  13. Analysis of random telegraph noise behaviors toward changes of source follower transistor operation conditions using high accuracy array test circuit

    市野真也, 間脇武蔵, 寺本章伸, 黒田理人, 若嶋駿一, 須川成利, 須川成利

    電子情報通信学会技術研究報告　117　(260)　57-62　2017/10

    ISSN： 0913-5685

  14. Statistical analysis of random telegraph noise in pixel source follower ~Impacts of transistor shape, time constants and number of states~

    KURODA Rihito, TERAMOTO Akinobu, ICHINO Shinya, MAWAKI Takezo, WAKASHIMA Shunichi, SUGAWA Shigetoshi

    ITE technical report　41.32　(32(IST2017 49-59))　13-16　2017

    Publisher: The institute of image information and television engineers

    DOI： 10.11485/itetr.41.32.0_13 　

    ISSN： 1342-6893

    eISSN： 2424-1970

    More details Close

    In this work, statistical analyses of random telegraph noise (RTN) at in-pixel source followers using array test circuit are reported with following two focuses. The first one is the impact of time constants and number of states toward readout noise in CMOS image sensors. The other one is the impact of transistor shapes. SF transistors with various shapes including rectangular, trapezoidal and octagonal structures were analyzed and reduction effect of RTN is summarized.

  15. Behavior of random telegraph noise toward bias voltage changing

    間脇武蔵, 寺本章伸, 黒田理人, 市野真也, 後藤哲也, 諏訪智之, 須川成利, 須川成利

    電子情報通信学会技術研究報告　116　(270)　35-38　2016/10

    ISSN： 0913-5685

  16. Dynamic Response of Random Telegraph Noise Time Constants toward Bias Voltage Changing

    2016　64-64　2016

    Publisher: Organizing Committee of Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers, Japan

    DOI： 10.11528/tsjc.2016.0_64 　

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Presentations 8

  1. Analysis of Reaction and Decomposition of Isopropyl Alcohol on Copper and Copper Oxide Surfaces Toward Area-selective Processes

    Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa

    5th Area-Selective Deposition Workshop (ASD 2021)　2021/04/06

  2. Impedance Measurement Platform Technology Toward Statistical Evaluation of Semiconductor Devices

    Koga Saito, Tatsuhiko Suzuki, Hidemi Mitsuda, Takezo Mawaki, Tomoyuki, Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Rihito Kuroda

    2023/11

  3. ランダムテレグラフノイズのMOSトランジスタ構造・動作条件依存性の統計的解析

    間脇武蔵, 黒田理人, 秋元瞭, 須川成利

    第28 回電子デバイス界面テクノロジー研究会　2023/02/04

  4. インピーダンス計測プラットフォーム技術を用いたSiN膜中トラップ特性の統計的計測

    齊藤宏河, 鈴木達彦, 光田薫未, 間脇武蔵, 諏訪智之, 寺本章伸, 須川成利, 黒田理人

    第28 回電子デバイス界面テクノロジー研究会　2023/02/04

  5. Statistical Analysis of Random Telegraphic Noise of MOS Transistors with Various Structures and Operation Conditions

    Takezo Mawaki, Rihito Kuroda, Ryo Akimoto, Shigetoshi Sugawa

    2023/02/03

  6. イソプロピルアルコールを用いた金属銅及び酸化銅上の表面改質 Invited

    間脇武蔵, 寺本章伸, 石井勝利, 志波良信, 諏訪智之, 東雲秀司, 清水亮, 梅澤好太, 黒田理人, 白井泰雪, 須川成利

    シリコン材料・デバイス（SDM）研究会　2021/06

  7. RTS noise characterization and suppression for advanced CMOS image sensors Invited

    Rihito Kuroda, Shinya Ichino, Takezo Mawaki, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa

    4th International Workshop on Image Sensors and Imaging Systems　2018/11/28

  8. Statistical Analysis of Random Telegraph Noise in Source Follower Transistors with Various Shapes

    S. Ichino, T. Mawaki, S. Wakashima, A. Teramoto, R. Kuroda

    2017 International Image Sensor Workshop (IISW)　2017/05

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Industrial Property Rights 1

  1. 選択成膜方法

    東雲 秀司, 梅澤 好太, 石井 勝利, 清水 亮, 寺本 章伸, 諏訪 智之, 白井 泰雪, 間脇 武蔵

    特許7231960

    Property Type: Patent

    Holder: 東京エレクトロン株式会社;国立大学法人東北大学

Research Projects 2

  1. Next-generation memory analysis and evaluation technology using statistical electrical measurement with ultra-low power consumption, short processing time, and low cost

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Early-Career Scientists

    Institution: Tohoku University

    2023/04/01 - 2026/03/31

  2. _

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Research Activity Start-up

    Category: Grant-in-Aid for Research Activity Start-up

    Institution: Tohoku University

    2022/08 - 2024/03

Teaching Experience 3

  1. 創造工学研修　東北大学

  2. 工学部電気情報物理工学科「学生実験 C」　東北大学

  3. 工学部電気情報物理工学科「学生実験 D」　東北大学