Details of the Researcher

PHOTO

Hideo Ohno
Section
Center for Innovative Integrated Electronic Systems
Job title
Specially Appointed Research Fellow
Degree

  • 工学博士（東京大学）

Profile

1982年東京大学大学院工学系研究科博士課程修了。

1982年北海道大学工学部講師、1983年北海道大学工学部助教授、この間に1988年～1990年 アメリカ合衆国IBM T. J. Watson Research Center客員研究員。1994年東北大学工学部教授、1995年東北大学電気通信研究所教授（2013年～2018年 所長）。あわせて2010年東北大学省エネルギー・スピントロニクス集積化システムセンター長、2010年東北大学原子分子材料科学高等研究機構主任研究者、2012年東北大学国際集積エレクトロニクス研究開発センター教授、2016年東北大学スピントロニクス学術連携研究教育センター長を務め、2018年第22代東北大学総長。2024年東北大学総長特別顧問。

2010年～2014年 内閣府 最先端研究開発支援プログラム「省エネルギー・スピントロニクス論理集積回路の研究開発」中心研究者。

専門分野：スピントロニクス、半導体物理・半導体工学

Committee Memberships 25

  • Institute of Electrical and Electronics Engineers (IEEE)　フェロー

    2018/01 - Present

  • American Physical Society (APS)　Fellow

    2013/03 - Present

  • Journal of SPIN　Editional Board (Consulting Editor)

    2010/04 - Present

  • Journal of Magnetics, Korean Magnetics Society　Overseas Editor

    2009/04 - Present

  • NPG Asia Materials　Advisory Board

    2009/04 - Present

  • 応用物理学会　フェロー

    2007/08 - Present

  • Institute of Physics (IOP)　フェロー

    2004/09 - Present

  • 日本学術会議　会員（第24期・第三部部長）

    2014/10 - 2020/09

  • Newton　Advisory Board

    2024/10 - Present

  • 日本学術会議　日本学術会議連携会員

    2020/10 - Present

  • 科学技術振興機構　外部評価委員

    2011/08 - 2012/03

  • 新機能素子研究開発協会 不揮発性技術を用いたIT機器の低消費電力化技術調査委員会　委員

    2011/07 - 2012/03

  • 新世代研究所「スピントロニクス研究会」　委員

    2009/04 - 2012/03

  • 新エネルギー・産業技術総合開発機構（NEDO）　技術委員

    2009/08 - 2011/03

  • 国際高等研究所「ナノ物質量子相の科学」　研究開発専門委員

    2009/04 - 2011/03

  • 文部科学省「科学技術・学術審議会」　専門委員

    2007/02 - 2010/01

  • 電子情報技術産業協会「スピントロニクス技術分科会」　委員長

    2008/04 - 2009/03

  • 電子情報技術産業協会「電子材料・デバイス技術専門委員会」　委員

    2008/04 - 2009/03

  • 文部科学省、経済産業省「ナノエレクトロニクス戦略合同委員会」　委員

    2007/02 - 2009/03

  • 新エネルギー産業技術総合開発機構研究評価委員会　評価委員

    2006/04 - 2009/03

  • Solid State Communications　Editor

    2005/11 - 2009/02

  • 日本学術会議　連携委員

    2006/04 - 2008/09

  • 新機能素子研究開発協会「スピントロニクス不揮発性技術調査委員会」　委員

    2006/09 - 2008/03

  • Japanese Journal of Applied Physics　Editor

    1993/01 - 1998/12

  • 日本結晶成長学会　評議員(1995,1996)

    1995/04 - 1997/03

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Professional Memberships 6

  • 電子情報通信学会

  • 日本物理学会

  • アメリカ電気電子学会

  • アメリカ物理学会

  • 日本結晶成長学会

  • 応用物理学会

︎Show all ︎Show first 5

Research Areas 4

  • Nanotechnology/Materials / Crystal engineering / Semiconductor Crystal Growth

  • Nanotechnology/Materials / Applied materials / Semiconductor Crystal Growth

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / Semiconductor Devices

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering / Properties of Semiconductors

Awards 31

  1. ISCS Heinrich Welker Award

    2019/05　Seminal contributions to the materials science, physics of ferromagnetic III-V semiconductors and spintronics

  2. Institute of Electrical and Electronics Engineers (IEEE)フェロー

    2018/01

  3. 2016年度C&C賞

    2016/11/30　NEC C&C財団　スピントロニクス技術に関する先駆的先導的研究への貢献

  4. 第13回江崎玲於奈賞

    2016/11/22　茨城県科学技術振興財団　強磁性物質におけるスピンの電気的制御と素子応用に関する先駆的研究

  5. 応用物理学会化合物半導体エレクトロニクス業績賞（赤﨑勇賞）

    2015/03/11　応用物理学会　強磁性化合物半導体の創成とスピントロニクスの先導的研究

  6. American Physical Society (APS)フェロー

    2013/03

  7. IEEE David Sarnoff Award

    2012/05/09　Institute of Electrical and Electronic Engineers (IEEE)　For seminal contributions and leadership in bridging semiconductor electronics with magnetism and spintronics

  8. 第12回応用物理学会業績賞（研究業績）

    2012/03/15　応用物理学会　半導体スピントロニクスにおける先駆的研究

  9. Thomson Reuters Citation Laureates

    2011/09/21　Thomson Reuters

  10. IEEE Magnetics Society Distinguished Lecturer for 2009

    2008/10/13　IEEE Magnetics Society

  11. 応用物理学会フェロー

    2007/08　半導体を中心としたスピントロニクスに関する研究

  12. 中国科学院半導体研究所 Honorary Professor

    2006/10/12　Institute of Semiconductors, Chinese Academy of Sciences

  13. The 2005 Agilent Technologies Europhysics Prize

    2005/07/12　European Physical Society

  14. Presidential Prize for Research Excellence

    2005/06/29　東北大学

  15. Japan Academy Prize

    2005/06/13　日本学士院　半導体ナノ構造による電子の量子制御と強磁性の研究

  16. Fellow (IOP)

    2004/09/01　The Institute of Physics (IOP)

  17. The IUPAP Magnetism Prize

    2003/07/27　International Union of Pure and Applied Physics　新しい強磁性半導体の開発

  18. 日本IBM科学賞

    1998/11　日本IBM株式会社

  19. 仙台市制136周年特別市政功労者

    2025/07　仙台市

  20. 第75回「電波の日」総務大臣表彰

    2025/06　総務省

  21. 第74回河北文化賞

    2025/01　河北文化事業団　総長として東北大学を国際卓越研究大学認定へ導き、地域の学術研究発展に貢献

  22. Honorary Doctorate, University of York, England

    2024/02

  23. Honorary Doctorate, University of Warsaw, Poland

    2023/11

  24. Doctorat Honoris Causa, Universite de Lorraine, France

    2022/05

  25. IEEE Magnetics Society Achievement Award

    2022/01　For fundamental discoveries of spintronic phenomena and their applications in memory and computing technologies

  26. International Fellow, Royal Swedish Academy of Engineering Sciences (IVA)

    2021/12

  27. 第41回（2019年度）応用物理学会優秀論文賞

    2019/09　応用物理学会　Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation

  28. 平成29年度科学技術分野の文部科学大臣表彰

    2017/04/19　文部科学省　STT-RAM大容量化回路技術に関する先駆的研究開発

  29. DPS Paper Award

    2016/11/21　International Symposium on Dry Process　Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion

  30. 東北大学ディスティングイッシュトプロフェッサー

    2011/10/01　東北大学

  31. Distinguished Professor

    2008/04/01　東北大学

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Papers 593

  1. Unconventional Spin Hall Magnetoresistance in Noncollinear Antiferromagnet/Heavy Metal Stacks

    Tomohiro Uchimura, Jiahao Han, Ping Tang, Ju-Young Yoon, Yutaro Takeuchi, Yuta Yamane, Shun Kanai, Gerrit E. W. Bauer, Hideo Ohno, Shunsuke Fukami

    Physical Review Letters　134　(9)　2025/03/03

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevlett.134.096701 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  2. Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure

    Ju-Young Yoon, Yutaro Takeuchi, Ryota Takechi, Jiahao Han, Tomohiro Uchimura, Yuta Yamane, Shun Kanai, Jun’ichi Ieda, Hideo Ohno, Shunsuke Fukami

    Nature Communications　16　(1)　2025/02/05

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41467-025-56157-6 　

    eISSN： 2041-1723

  3. Block Copolymer-Directed Single-Diamond Hybrid Structures Derived from X-ray Nanotomography

    Kenza Djeghdi, Dmitry Karpov, S. Narjes Abdollahi, Karolina Godlewska, René Iseli, Mirko Holler, Claire Donnelly, Takeshi Yuasa, Hiroaki Sai, Ulrich B. Wiesner, Ullrich Steiner, Bodo D. Wilts, Michimasa Musya, Shunsuke Fukami, Hideo Ohno, Ana Diaz, Justin Llandro, Ilja Gunkel

    ACS Nano　18　(39)　26503-26513　2024/10/01

    DOI： 10.1021/acsnano.3c10669 　

    ISSN： 1936-0851

    eISSN： 1936-086X

  4. Effect of nonlinear magnon interactions on stochastic magnetization switching

    Mehrdad Elyasi, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Gerrit E.W. Bauer

    Physical Review B　110　(9)　2024/09/01

    DOI： 10.1103/PhysRevB.110.094433 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  5. Nanoscale spin rectifiers for harvesting ambient radiofrequency energy

    Raghav Sharma, Tung Ngo, Eleonora Raimondo, Anna Giordano, Junta Igarashi, Butsurin Jinnai, Shishun Zhao, Jiayu Lei, Yong Xin Guo, Giovanni Finocchio, Shunsuke Fukami, Hideo Ohno, Hyunsoo Yang

    Nature Electronics　7　(8)　653-661　2024/08

    DOI： 10.1038/s41928-024-01212-1 　

    eISSN： 2520-1131

  6. Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

    Rikuto Ota, Keito Kobayashi, Keisuke Hayakawa, Shun Kanai, Kerem Y. Çamsarı, Hideo Ohno, Shunsuke Fukami

    Applied Physics Letters　125　(2)　2024/07/08

    Publisher: AIP Publishing

    DOI： 10.1063/5.0219606 　

    ISSN： 0003-6951

    eISSN： 1077-3118

    More details Close

    Stochastic magnetic tunnel junction (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to voltage across the junction over several hundred millivolts. In conventional s-MTJs with a reference layer having a fixed magnetization direction, however, the stochastic output significantly varies with the voltage due to spin-transfer torque (STT) acting on the stochastic free layer. In this work, we study a s-MTJ with a “double-free-layer” design theoretically proposed earlier, in which the fixed reference layer of the conventional structure is replaced by another stochastic free layer, effectively mitigating the influence of STT on the stochastic output. We show that the key device property characterized by the ratio of relaxation times between the high- and low-resistance states is one to two orders of magnitude less sensitive to bias voltage variations compared to conventional s-MTJs when the top and bottom free layers are designed to possess the same effective thickness. This work opens a pathway for reliable, nanosecond-operation, high-output, and scalable spintronics-based p-bits.

  7. Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl2O4

    Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullvan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto KOHDA, Shunuske Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno, Shun Kanai

    Applied Physics Express　2024/06/19

    Publisher: IOP Publishing

    DOI： 10.35848/1882-0786/ad59f4 　

    ISSN： 1882-0778

    eISSN： 1882-0786

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    Abstract Since the qubit’s performance of solid-state spin centers depends highly on the host material, spin centers using new host materials may offer new qubit applications. We investigate the optical properties of Ce-implanted MgO and MgAl2O4 as potential materials holding the optically accessible qubit. We find that the photoluminescence of Ce-implanted MgAl2O4 is more than 10 times brighter than that of Ce-implanted MgO and observe polarization-dependent emission of Ce center in MgAl2O4 with 2% at 4 K under 500 mT, suggesting that the properties required for initializing and reading the state of the spin qubit have been achieved.

  8. Collective Spin-Wave Dynamics in Gyroid Ferromagnetic Nanostructures

    Mateusz Gołębiewski, Riccardo Hertel, Massimiliano d’Aquino, Vitaliy Vasyuchka, Mathias Weiler, Philipp Pirro, Maciej Krawczyk, Shunsuke Fukami, Hideo Ohno, Justin Llandro

    ACS Applied Materials and Interfaces　16　(17)　22177-22188　2024/05/01

    DOI： 10.1021/acsami.4c02366 　

    ISSN： 1944-8244

    eISSN： 1944-8252

  9. Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization

    Haruna Kaneko, Rikuto Ota, Keito Kobayashi, Shun Kanai, Mehrdad Elyasi, Gerrit E. W. Bauer, Hideo Ohno, Shunsuke Fukami

    Applied Physics Express　2024/05/01

    DOI： 10.35848/1882-0786/ad43b0 　

  10. Room-temperature flexible manipulation of the quantum-metric structure in a topological chiral antiferromagnet

    Jiahao Han, Tomohiro Uchimura, Yasufumi Araki, Ju-Young Yoon, Yutaro Takeuchi, Yuta Yamane, Shun Kanai, Jun’ichi Ieda, Hideo Ohno, Shunsuke Fukami

    Nature Physics　2024/04/22

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41567-024-02476-2 　

    ISSN： 1745-2473

    eISSN： 1745-2481

  11. CMOS plus stochastic nanomagnets enabling heterogeneous computers for probabilistic inference and learning

    Nihal Sanjay Singh, Keito Kobayashi, Qixuan Cao, Kemal Selcuk, Tianrui Hu, Shaila Niazi, Navid Anjum Aadit, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

    Nature Communications　15　(1)　2024/03/27

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41467-024-46645-6 　

    eISSN： 2041-1723

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    Abstract Extending Moore’s law by augmenting complementary-metal-oxide semiconductor (CMOS) transistors with emerging nanotechnologies (X) has become increasingly important. One important class of problems involve sampling-based Monte Carlo algorithms used in probabilistic machine learning, optimization, and quantum simulation. Here, we combine stochastic magnetic tunnel junction (sMTJ)-based probabilistic bits (p-bits) with Field Programmable Gate Arrays (FPGA) to create an energy-efficient CMOS + X (X = sMTJ) prototype. This setup shows how asynchronously driven CMOS circuits controlled by sMTJs can perform probabilistic inference and learning by leveraging the algorithmic update-order-invariance of Gibbs sampling. We show how the stochasticity of sMTJs can augment low-quality random number generators (RNG). Detailed transistor-level comparisons reveal that sMTJ-based p-bits can replace up to 10,000 CMOS transistors while dissipating two orders of magnitude less energy. Integrated versions of our approach can advance probabilistic computing involving deep Boltzmann machines and other energy-based learning algorithms with extremely high throughput and energy efficiency.

  12. Pitch Scaling Prospect of Ultra-Small Magnetic Tunnel Junctions for High-Density STT-MRAM: Effects of Magnetostatic Interference From Neighboring Bits

    Takanobu Shinoda, Junta Igarashi, Butsurin Jinnai, Shunsuke Fukami, Hideo Ohno

    IEEE Electron Device Letters　2024/02

    DOI： 10.1109/LED.2023.3345743 　

  13. Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities

    Junta Igarashi, Butsurin Jinnai, Kyota Watanabe, Takanobu Shinoda, Takuya Funatsu, Hideo Sato, Shunsuke Fukami, Hideo Ohno

    npj Spintronics　2024/01/04

    DOI： 10.1038/s44306-023-00003-2 　

    ISSN： 2948-2119

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    <jats:title>Abstract</jats:title><jats:p>Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-transfer torque magnetoresistive random access memory (STT-MRAM). However, it is challenging in the conventional MTJs using a thin CoFeB free layer capped with an MgO layer because of increasing difficulties in satisfying the required data retention and switching speed at smaller scales. Here we report single-nanometer MTJs using a free layer consisting of CoFeB/MgO multilayers, where the number of CoFeB/MgO interfaces and/or the CoFeB thicknesses are engineered to tailor device performance to applications requiring high-data retention or high-speed capability. We fabricate ultra-small MTJs down to 2.0 nm and show high data retention (over 10 years) and high-speed switching at 10 ns or below in sub-5-nm MTJs. The stack design proposed here proves that ultra-small CoFeB/MgO MTJs hold the potential for high-performance and high-density STT-MRAM.</jats:p>

  14. High-resolution three-dimensional imaging of topological textures in nanoscale single-diamond networks

    D. Karpov, K. Djeghdi, M. Holler, S. Narjes Abdollahi, K. Godlewska, C. Donnelly, T. Yuasa, H. Sai, U. B. Wiesner, B. D. Wilts, U. Steiner, M. Musya, S. Fukami, H. Ohno, I. Gunkel, A. Diaz, J. Llandro

    Nature Nanotechnology　2024

    DOI： 10.1038/s41565-024-01735-w 　

    ISSN： 1748-3387

    eISSN： 1748-3395

  15. Hardware Demonstration of Feedforward Stochastic Neural Networks with Fast MTJ-based p-bits

    Nihal Sanjay Singh, Shaila Niazi, Shuvro Chowdhury, Kemal Selcuk, Haruna Kaneko, Keito Kobayashi, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

    2023 International Electron Devices Meeting (IEDM)　1-4　2023/12/09

    Publisher: IEEE

    DOI： 10.1109/iedm45741.2023.10413686 　

  16. Double-Free-Layer Stochastic Magnetic Tunnel Junctions with Synthetic Antiferromagnets

    Kemal Selcuk, Shun Kanai, Rikuto Ota, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

    2311.06642　2023/11/11

    DOI： 10.48550/arXiv.2311.06642 　

  17. Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque

    Ju-Young Yoon, Pengxiang Zhang, Chung-Tao Chou, Yutaro Takeuchi, Tomohiro Uchimura, Justin T. Hou, Jiahao Han, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Luqiao Liu

    Nature Materials　22　(9)　1106-1113　2023/08/03

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41563-023-01620-2 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  18. Magnetic order in nanoscale gyroid networks

    Ami S. Koshikawa, Justin Llandro, Masayuki Ohzeki, Shunsuke Fukami, Hideo Ohno, Naëmi Leo

    Physical Review B　2023/07/17

    DOI： 10.1103/PhysRevB.108.024414 　

  19. Nonlinear conductance in nanoscale CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis Peer-reviewed

    Motoya Shinozaki, Junta Igarashi, Shuichi Iwakiri, Takahito Kitada, Keisuke Hayakawa, Butsurin Jinnai, Tomohiro Otsuka, Shunsuke Fukami, Kensuke Kobayashi, Hideo Ohno

    Physical Review B　107　(9)　2023/03/30

    DOI： 10.1103/PhysRevB.107.094436 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  20. Thermal stability of non-collinear antiferromagnetic Mn<inf>3</inf>Sn nanodot

    Yuma Sato, Yutaro Takeuchi, Yuta Yamane, Ju Young Yoon, Shun Kanai, Jun'Ichi Ieda, Hideo Ohno, Shunsuke Fukami

    Applied Physics Letters　122　(12)　2023/03/20

    DOI： 10.1063/5.0135709 　

    ISSN： 0003-6951

  21. A full-stack view of probabilistic computing with p-bits: devices, architectures and algorithms

    Shuvro Chowdhury, Andrea Grimaldi, Navid Anjum Aadit, Shaila Niazi, Masoud Mohseni, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Luke Theogarajan, Giovanni Finocchio, Supriyo Datta, Kerem Y. Camsari

    IEEE Journal on Exploratory Solid-State Computational Devices and Circuits　2023

    DOI： 10.1109/JXCDC.2023.3256981 　

    eISSN： 2329-9231

  22. Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions

    Takuya Funatsu, Shun Kanai, Jun’ichi Ieda, Shunsuke Fukami, Hideo Ohno

    Nature Communications　13　(1)　2022/12

    DOI： 10.1038/s41467-022-31788-1 　

    eISSN： 2041-1723

  23. External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling

    Keito Kobayashi, Keisuke Hayakawa, Junta Igarashi, William A. Borders, Shun Kanai, Hideo Ohno, Shunsuke Fukami

    Physical Review Applied　18　(5)　2022/11/29

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevapplied.18.054085 　

    eISSN： 2331-7019

  24. Generalized scaling of spin qubit coherence in over 12,000 host materials

    Shun Kanai, F. Joseph Heremans, Hosung Seo, Gary Wolfowicz, Christopher P. Anderson, Sean E. Sullivan, Mykyta Onizhuk, Giulia Galli, David D. Awschalom, Hideo Ohno

    Proceedings of the National Academy of Sciences　119　(15)　2022/04/12

    Publisher: Proceedings of the National Academy of Sciences

    DOI： 10.1073/pnas.2121808119 　

    ISSN： 0027-8424

    eISSN： 1091-6490

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    Significance Atomic defects in solid-state materials are promising candidates as quantum bits, or qubits. New materials are actively being investigated as hosts for new defect qubits; however, there are no unifying guidelines that can quantitatively predict qubit performance in a new material. One of the most critical property of qubits is their quantum coherence. While cluster correlation expansion (CCE) techniques are useful to simulate the coherence of electron spins in defects, they are computationally expensive to investigate broad classes of stable materials. Using CCE simulations, we reveal a general scaling relation between the electron spin coherence time and the properties of qubit host materials that enables rapid and quantitative exploration of new materials hosting spin defects.

  25. Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect

    Tomohiro Uchimura, Ju-Young Yoon, Yuma Sato, Yutaro Takeuchi, Shun Kanai, Ryota Takechi, Keisuke Kishi, Yuta Yamane, Samik DuttaGupta, Jun'ichi Ieda, Hideo Ohno, Shunsuke Fukami

    APPLIED PHYSICS LETTERS　120　(17)　2022/04

    DOI： 10.1063/5.0089355 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  26. Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties

    Yutaro Takeuchi, Ryotaro Okuda, Junta Igarashi, Butsurin Jinnai, Takaharu Saino, Shoji Ikeda, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　120　(5)　2022/01/31

    DOI： 10.1063/5.0077874 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  27. Experimental evaluation of simulated quantum annealing with MTJ-augmented p-bits

    Andrea Grimaldi, Kemal Selcuk, Navid Anjum Aadit, Keito Kobayashi, Qixuan Cao, Shuvro Chowdhury, Giovanni Finocchio, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

    Technical Digest - International Electron Devices Meeting, IEDM　2022-December　2241-2244　2022

    DOI： 10.1109/IEDM45625.2022.10019530 　

    ISSN： 0163-1918

  28. Hardware-Aware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions

    Jan Kaiser, William A. Borders, Kerem Y. Camsari, Shunsuke Fukami, Hideo Ohno, Supriyo Datta

    Physical Review Applied　17　(1)　2022/01

    DOI： 10.1103/PhysRevApplied.17.014016 　

    ISSN： 2331-7019

    eISSN： 2331-7019

  29. Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing

    Mohammad Zahedinejad, Himanshu Fulara, Roman Khymyn, Afshin Houshang, Mykola Dvornik, Shunsuke Fukami, Shun Kanai, Hideo Ohno, Johan Åkerman

    Nature Materials　21　(1)　81-87　2022/01

    DOI： 10.1038/s41563-021-01153-6 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  30. Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions

    Yutaro Takeuchi, Eli Christopher I. Enobio, Butsurin Jinnai, Hideo Sato, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　119　(24)　2021/12/13

    DOI： 10.1063/5.0072957 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  31. Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis

    Keito Kobayashi, William A. Borders, Shun Kanai, Keisuke Hayakawa, Hideo Ohno, Shunsuke Fukami

    Applied Physics Letters　119　(13)　2021/09/27

    DOI： 10.1063/5.0065919 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  32. Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2 Peer-reviewed

    Rajeswari Roy Chowdhury, Samik DuttaGupta, Chandan Patra, Oleg A. Tretiakov, Sudarshan Sharma, Shunsuke Fukami, Hideo Ohno, Ravi Prakash Singh

    Scientific Reports　11　(1)　2021/07

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41598-021-93402-6 　

    eISSN： 2045-2322

  33. Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction Peer-reviewed

    Takaaki Dohi, Shunsuke Fukami, Hideo Ohno

    Physical Review B　103　(21)　2021/06/19

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevb.103.214450 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  34. Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1−x thin films Peer-reviewed

    Ju-Young Yoon, Yutaro Takeuchi, Samik DuttaGupta, Yuta Yamane, Shun Kanai, Jun’ichi Ieda, Hideo Ohno, Shunsuke Fukami

    AIP Advances　11　(6)　065318-065318　2021/06/14

    Publisher: AIP Publishing

    DOI： 10.1063/5.0043192 　

    eISSN： 2158-3226

  35. Chiral-spin rotation of non-collinear antiferromagnet by spin–orbit torque Peer-reviewed

    Yutaro Takeuchi, Yuta Yamane, Ju-Young Yoon, Ryuichi Itoh, Butsurin Jinnai, Shun Kanai, Jun’ichi Ieda, Shunsuke Fukami, Hideo Ohno

    Nature Materials　20　(10)　1364-+　2021/05/13

    DOI： 10.1038/s41563-021-01005-3 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  36. Electrically connected spin-torque oscillators array for 2.4 GHz WiFi band transmission and energy harvesting Peer-reviewed

    Raghav Sharma, Rahul Mishra, Tung Ngo, Yong-Xin Guo, Shunsuke Fukami, Hideo Sato, Hideo Ohno, Hyunsoo Yang

    Nature Communications　12　(1)　2021/05

    DOI： 10.1038/s41467-021-23181-1 　

    ISSN： 2041-1723

    eISSN： 2041-1723

  37. Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits Peer-reviewed

    Kerem Y. Camsari, Mustafa Mert Torunbalci, William A. Borders, Hideo Ohno, Shunsuke Fukami

    Physical Review Applied　15　(4)　2021/04/29

    DOI： 10.1103/physrevapplied.15.044049 　

    ISSN： 2331-7019

    eISSN： 2331-7019

  38. Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition

    Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

    IEEE Journal of Solid-State Circuits　56　(4)　1116-1128　2021/04

    DOI： 10.1109/JSSC.2020.3039800 　

    ISSN： 0018-9200

    eISSN： 1558-173X

  39. Erratum: Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions (Appl. Phys. Lett. (2021) 118 (082404) DOI: 10.1063/5.0043058)

    Butsurin Jinnai, Junta Igarashi, Kyota Watanabe, Eli Christopher I. Enobio, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　118　(13)　2021/03/29

    DOI： 10.1063/5.0050431 　

    ISSN： 0003-6951

  40. Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions Peer-reviewed

    K. Hayakawa, S. Kanai, T. Funatsu, J. Igarashi, B. Jinnai, W. A. Borders, H. Ohno, S. Fukami

    Physical Review Letters　126　(11)　2021/03/17

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevlett.126.117202 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  41. Theory of relaxation time of stochastic nanomagnets Peer-reviewed

    Shun Kanai, Keisuke Hayakawa, Hideo Ohno, Shunsuke Fukami

    Physical Review B　103　(9)　2021/03/17

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevb.103.094423 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  42. Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque Peer-reviewed

    Chaoliang Zhang, Yutaro Takeuchi, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　118　(9)　092406-092406　2021/03/01

    DOI： 10.1063/5.0039061 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  43. Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions Peer-reviewed

    Butsurin Jinnai, Junta Igarashi, Kyota Watanabe, Eli Christopher I. Enobio, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　118　(8)　082404-082404　2021/02/22

    DOI： 10.1063/5.0043058 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  44. Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions Peer-reviewed

    Junta Igarashi, Butsurin Jinnai, Valentin Desbuis, Stéphane Mangin, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　118　(1)　012409-012409　2021/01/04

    DOI： 10.1063/5.0029031 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  45. Fast Switching Down to 3.5 ns in Sub-5-nm Magnetic Tunnel Junctions Achieved by Engineering Relaxation Time

    B. Jinnai, J. Igarashi, T. Shinoda, K. Watanabe, S. Fukami, H. Ohno

    Technical Digest - International Electron Devices Meeting, IEDM　2021-December　1-4　2021

    DOI： 10.1109/IEDM19574.2021.9720509 　

    ISSN： 0163-1918

  46. Magnetization processes and magnetic domain structures in Ta/CoFeB/MgO stacks Peer-reviewed

    A.K. Dhiman, T. Dohi, W. Dobrogowski, Z. Kurant, I. Sveklo, S. Fukami, H. Ohno, A. Maziewski

    Journal of Magnetism and Magnetic Materials　529　167699-167699　2021/01

    Publisher: Elsevier BV

    DOI： 10.1016/j.jmmm.2020.167699 　

    ISSN： 0304-8853

  47. High-performance shape-anisotropy magnetic tunnel junctions down to 2.3 nm

    B. Jinnai, J. Igarashi, K. Watanabe, T. Funatsu, H. Sato, S. Fukami, H. Ohno

    Technical Digest - International Electron Devices Meeting, IEDM　2020-December　24.6.1-24.6.4　2020/12/12

    DOI： 10.1109/IEDM13553.2020.9371972 　

    ISSN： 0163-1918

  48. Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials International-journal Peer-reviewed

    Junta Igarashi, Quentin Remy, Satoshi Iihama, Grégory Malinowski, Michel Hehn, Jon Gorchon, Julius Hohlfeld, Shunsuke Fukami, Hideo Ohno, Stéphane Mangin

    Nano Letters　20　(12)　8654-8660　2020/11/23

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acs.nanolett.0c03373 　

    ISSN： 1530-6984

    eISSN： 1530-6992

    More details Close

    Since it was recently demonstrated in a spin-valve structure, magnetization reversal of a ferromagnetic layer using a single ultrashort optical pulse has attracted attention for future ultrafast and energy-efficient magnetic storage or memory devices. However, the mechanism and the role of the magnetic properties of the ferromagnet as well as the time scale of the magnetization switching are not understood. Here, we investigate single-shot all-optical magnetization switching in a GdFeCo/Cu/[Co x Ni1-x/Pt] spin-valve structure. We demonstrate that the threshold fluence for switching both the GdFeCo and the ferromagnetic layer depends on the laser pulse duration and the thickness and the Curie temperature of the ferromagnetic layer. We are able to explain most of the experimental results using a phenomenological model. This work provides a way to engineer ferromagnetic materials for energy efficient single-shot all-optical magnetization switching.

  49. Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance Peer-reviewed

    M. Shinozaki, T. Dohi, J. Igarashi, J. Llandro, S. Fukami, H. Sato, H. Ohno

    Applied Physics Letters　117　(20)　202404-202404　2020/11/16

    Publisher: AIP Publishing

    DOI： 10.1063/5.0020591 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  50. Spin-orbit torque switching of an antiferromagnetic metallic heterostructure Peer-reviewed

    Samik DuttaGupta, A. Kurenkov, Oleg A. Tretiakov, G. Krishnaswamy, G. Sala, V. Krizakova, F. Maccherozzi, S. S. Dhesi, P. Gambardella, S. Fukami, H. Ohno

    Nature Communications　11　(1)　2020/11

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41467-020-19511-4 　

    eISSN： 2041-1723

  51. Multidomain Memristive Switching of Pt38Mn62/[Co/Ni]n Multilayers Peer-reviewed

    G. Krishnaswamy, A. Kurenkov, G. Sala, M. Baumgartner, V. Krizakova, C. Nistor, F. Maccherozzi, S. S. Dhesi, S. Fukami, H. Ohno, P. Gambardella

    Physical Review Applied　14　(4)　2020/10/20

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevapplied.14.044036 　

    eISSN： 2331-7019

  52. Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet International-journal Peer-reviewed

    Quentin Remy, Junta Igarashi, Satoshi Iihama, Grégory Malinowski, Michel Hehn, Jon Gorchon, Julius Hohlfeld, Shunsuke Fukami, Hideo Ohno, Stéphane Mangin

    Advanced Science　7　(23)　2001996-2001996　2020/10

    Publisher: Wiley

    DOI： 10.1002/advs.202001996 　

    ISSN： 2198-3844

    eISSN： 2198-3844

    More details Close

    New methods to induce magnetization switching in a thin ferromagnetic material using femtosecond laser pulses without the assistance of an applied external magnetic field have recently attracted a lot of interest. It has been shown that by optically triggering the reversal of the magnetization in a GdFeCo layer, the magnetization of a nearby ferromagnetic thin film can also be reversed via spin currents originating in the GdFeCo layer. Here, using a similar structure, it is shown that the magnetization reversal of the GdFeCo is not required in order to reverse the magnetization of the ferromagnetic thin film. This switching is attributed to the ultrafast spin current and can be generated by the GdFeCo demagnetization. A larger energy efficiency of the ferromagnetic layer single pulse switching is obtained for a GdFeCo with a larger Gd concentration. Those ultrafast and energy efficient switchings observed in such spintronic devices open a new path toward ultrafast and energy efficient magnetic memories.

  53. Giant voltage-controlled modulation of spin Hall nano-oscillator damping International-journal Peer-reviewed

    Himanshu Fulara, Mohammad Zahedinejad, Roman Khymyn, Mykola Dvornik, Shunsuke Fukami, Shun Kanai, Hideo Ohno, Johan Åkerman

    Nature Communications　11　(1)　4006-4006　2020/08

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41467-020-17833-x 　

    eISSN： 2041-1723

    More details Close

    Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator-based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive to individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42% variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing.

  54. Composition dependence of spin−orbit torque in Pt1−xMnx/CoFeB heterostructures Peer-reviewed

    K. Vihanga De Zoysa, Samik DuttaGupta, Ryuichi Itoh, Yutaro Takeuchi, Hideo Ohno, Shunsuke Fukami

    Applied Physics Letters　117　(1)　012402-012402　2020/07/09

    DOI： 10.1063/5.0011448 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  55. Neuromorphic computing with antiferromagnetic spintronics Peer-reviewed

    Aleksandr Kurenkov, Shunsuke Fukami, Hideo Ohno

    Journal of Applied Physics　128　(1)　010902-010902　2020/07/07

    DOI： 10.1063/5.0009482 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  56. Current distribution in metallic multilayers from resistance measurements Peer-reviewed

    Ondřej Stejskal, André Thiaville, Jaroslav Hamrle, Shunsuke Fukami, Hideo Ohno

    Physical Review B　101　(23)　2020/06/24

    DOI： 10.1103/physrevb.101.235437 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  57. Probabilistic computing based on spintronics technology Peer-reviewed

    Shunsuke Fukami, William A. Borders, Ahmed Z. Pervaiz, Kerem Y. Camsari, Supriyo Datta, Hideo Ohno

    2020 IEEE Silicon Nanoelectronics Workshop (SNW)　2020/06

    Publisher: IEEE

    DOI： 10.1109/snw50361.2020.9131622 　

  58. Visualizing magnetic structure in 3d nanoscale ni-fe gyroid networks Peer-reviewed

    Justin Llandro, David M. Love, András Kovács, Jan Caron, Kunal N. Vyas, Attila Kákay, Ruslan Salikhov, Kilian Lenz, Jürgen Fassbender, Maik R.J. Scherer, Christian Cimorra, Ullrich Steiner, Crispin H.W. Barnes, Rafal E. Dunin-Borkowski, Shunsuke Fukami, Hideo Ohno

    Nano Letters　20　(5)　3642-3650　2020/05/13

    DOI： 10.1021/acs.nanolett.0c00578 　

    ISSN： 1530-6984

    eISSN： 1530-6992

  59. Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects Peer-reviewed

    Butsurin Jinnai, Kyota Watanabe, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　116　(16)　160501-160501　2020/04/20

    Publisher: AIP Publishing

    DOI： 10.1063/5.0004434 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  60. Zero-field spin precession dynamics of high-mobility two-dimensional electron gas in persistent spin helix regime Peer-reviewed

    Jun Ishihara, Go Kitazawa, Yuya Furusho, Yuzo Ohno, Hideo Ohno, Kensuke Miyajima

    Physical Review B　101　(9)　2020/03/31

    Publisher: American Physical Society ({APS})

    DOI： 10.1103/PhysRevB.101.094438 　

  61. Complex switching behavior of magnetostatically coupled single-domain nanomagnets probed by micro-Hall magnetometry

    Keswani, N., Nakajima, Y., Chauhan, N., Ukai, T., Chakraborti, H., Gupta, K.D., Hanajiri, T., Kumar, S., Ohno, Y., Ohno, H., Das, P.

    Applied Physics Letters　116　(10)　2020

    DOI： 10.1063/1.5144841 　

  62. Stack structure and temperature dependence of spin-orbit torques in heterostructures with antiferromagnetic PtMn Peer-reviewed

    Ryuichi Itoh, Yutaro Takeuchi, Samik DuttaGupta, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　115　(24)　242404-242404　2019/12/11

    DOI： 10.1063/1.5129829 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  63. Crystal orientation and anomalous Hall effect of sputter-deposited non-collinear antiferromagnetic Mn3Sn thin films Peer-reviewed

    Juyoung Yoon, Yutaro Takeuchi, Ryuichi Itoh, Shun Kanai, Shunsuke Fukami, Hideo Ohno

    Applied Physics Express　13　(1)　013001-013001　2019/12/04

    DOI： 10.7567/1882-0786/ab5874 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  64. Spin-orbit torque neuron and synapse devices for brainmorphic computing Peer-reviewed

    Yoshihiko Horio, Aleksandr Kurenkov, Shunsuke Fukami, Hideo Ohno

    Proceedings of International Symposium on Nonlinear Theory and Its Applications　78-78　2019/12

  65. Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime Peer-reviewed

    Takaharu Saino, Shun Kanai, Motoya Shinozaki, Butsurin Jinnai, Hideo Sato, Shunsuke Fukami, Hideo Ohno

    Applied Physics Letters　115　(14)　142406-142406　2019/09/30

    DOI： 10.1063/1.5121157 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  66. Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction

    S. Gupta, F. Matsukura, H. Ohno

    Journal of Physics D: Applied Physics　52　(49)　2019/09/20

    Publisher: Institute of Physics Publishing

    DOI： 10.1088/1361-6463/ab3fc6 　

    ISSN： 1361-6463 0022-3727

  67. Integer factorization using stochastic magnetic tunnel junctions International-journal Peer-reviewed

    Borders William A, Pervaiz Ahmed Z, Fukami Shunsuke, Camsari Kerem Y, Ohno Hideo, Datta Supriyo

    NATURE　573　(7774)　390-+　2019/09/19

    DOI： 10.1038/s41586-019-1557-9 　

    ISSN： 0028-0836

    eISSN： 1476-4687

  68. Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance Peer-reviewed

    Atsushi Okada, Yutaro Takeuchi, Kaito Furuya, Chaoliang Zhang, Hideo Sato, Shunsuke Fukami, Hideo Ohno

    Physical Review Applied　12　(1)　2019/07/23

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevapplied.12.014040 　

    eISSN： 2331-7019

  69. Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material EuB6 Peer-reviewed

    Merlin Pohlit, Sahana Rößler, Yuzo Ohno, Hideo Ohno, Stephan Von Molnár, Zachary Fisk, Jens Müller, Steffen Wirth

    Physical Review Letters　120　(25)　2018/06/19

    DOI： 10.1103/PhysRevLett.120.257201 　

    ISSN： 1079-7114 0031-9007

  70. MTJ-based nonvolatile logic LSI for ultra low-power and highly dependable computing Peer-reviewed

    Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    China Semiconductor Technology International Conference 2018, CSTIC 2018　1-4　2018/05/29

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.1109/CSTIC.2018.8369189 　

  71. Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer

    H. Honjo, H. Sato, S. Ikeda, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

    2017 IEEE International Magnetics Conference, INTERMAG 2017　2017/08/10

    DOI： 10.1109/INTMAG.2017.8008047 　

  72. An artificial neural network with an analogue spin-orbit torque device Peer-reviewed

    W.A. Borders, H. Akima, S. Fukami, S. Moriya, S. Kurihara, A. Kurenkov, Yoshihiko Horio, S. Sato, H. Ohno

    Proceedings of the IEEE International Magnetics Conference　2017/04/24

    DOI： 10.1109/INTMAG.2017.8007937 　

  73. Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy Peer-reviewed

    Atsushi Okada, Shikun He, Bo Gu, Shun Kanai, Anjan Soumyanarayanan, Sze Ter Lim, Michael Tran, Michiyasu Mori, Sadamichi Maekawa, Fumihiro Matsukura, Hideo Ohno, Christos Panagopoulos

    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA　114　(15)　3815-3820　2017/04

    DOI： 10.1073/pnas.1613864114 　

    ISSN： 0027-8424

  74. Design of a variation-resilient single-ended non-volatile six-input lookup table circuit with a redundant-magnetic tunnel junction-based active load for smart Internet-of-things applications Peer-reviewed

    D. Suzuki, M. Natsui, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

    ELECTRONICS LETTERS　53　(7)　456-458　2017/03

    DOI： 10.1049/el.2016.4233 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  75. Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field Peer-reviewed

    N. Ohshima, H. Sato, S. Kanai, J. Llandro, S. Fukami, H. Ohno

    AIP Advances　7　055927(1)-055927(5)　2017/02/22

  76. Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

    Natsui Masanori, Tamakoshi Akira, Endoh Tetsuo, Ohno Hideo, Hanyu Takahiro

    Jpn. J. Appl. Phys.　56　(4)　04CN01　2017/02/16

    Publisher: Institute of Physics

    DOI： 10.7567/JJAP.56.04CN01 　

    ISSN： 0021-4922

    More details Close

    A magnetic-tunnel-junction (MTJ)-based video coding hardware with an MTJ-write-error-rate relaxation scheme as well as a nonvolatile storage capacity reduction technique is designed and fabricated in a 90 nm MOS and 75 nm perpendicular MTJ process. The proposed MTJ-oriented dynamic error masking scheme suppresses the effect of write operation errors on the operation result of LSI, which results in the increase in an acceptable MTJ write error rate up to 7.8 times with less than 6% area overhead, while achieving 79% power reduction compared with that of the static-random-access-memory-based one.

  77. Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance Peer-reviewed

    M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, H. Ohno

    Applied Physics Express　10　013001(1)-013001(3)　2017/02

  78. Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures Peer-reviewed

    A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, H. Ohno

    APPLIED PHYSICS LETTERS　110　(9)　092410(1)-092410(5)　2017/02

    DOI： 10.1063/1.4977838 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  79. Ferromagnetic resonance spectra of Py deposited on (Bi1-xSbx)2Te3 Peer-reviewed

    S. Gupta, S. Kanai, F. Matsukura, H. Ohno

    AIP Advances　7　055919(1)-055919(4)　2017/01/23

  80. Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO Peer-reviewed

    S. DuttaGupta, S. Fukami, B. Kuebanjiang, H. Sato, F. Matsukura, V. K. Lazarov, H. Ohno

    AIP Advances　7　055918(1)-055918(7)　2017/01/20

  81. Use of Analog Spintronics Device in Performing Neuro-Morphic Computing Functions

    Shunsuke Fukami, William A. Borders, Aleksandr Kurenkov, Chaoliang Zhang, Samik DuttaGupta, Hideo Ohno

    2017 FIFTH BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS & STEEP TRANSISTORS WORKSHOP (E3S)　2017

  82. Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation Peer-reviewed

    W. A. Borders, H. Akima, S. Fukami, S. Moriya, S. Kurihara, Y. Horio, S. Sato, H. Ohno

    Applied Physics Express　10　013007(1)-013007(4)　2017/01

  83. Beyond MRAM: Nonvolatile Logic-in-Memory VLSI Peer-reviewed

    Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno

    Introduction to Magnetic Random-Access Memory　199-229　2016/11/26

    Publisher: wiley

    DOI： 10.1002/9781119079415.ch7 　

  84. Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO Peer-reviewed

    C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　109　(19)　192405(1)-192405(4)　2016/11

    DOI： 10.1063/1.4967475 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  85. Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing Peer-reviewed

    Takahiro Hanyu, Tetsuo Endoh, Daisuke Suzuki, Hiroki Koike, Yitao Ma, Naoya Onizawa, Masanori Natsui, Shoji Ikeda, Hideo Ohno

    PROCEEDINGS OF THE IEEE　104　(10)　1844-1863　2016/10

    DOI： 10.1109/JPROC.2016.2574939 　

    ISSN： 0018-9219

    eISSN： 1558-2256

  86. Spintronics Peer-reviewed

    H. Ohno, M. D. Stiles, B. Dieny

    Proc. Institute of Electrical and Electronics Engineers　104　1782-1786　2016/10

    DOI： 10.1109/JPROC.2016.2601163 　

  87. Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis Peer-reviewed

    Hamid Mazraati, Tuan Q. Le, Ahmad A. Awad, Sunjae Chung, Eriko Hirayama, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno, Johan Akerman

    PHYSICAL REVIEW B　94　(10)　104428(1)-104428(6)　2016/09

    DOI： 10.1103/PhysRevB.94.104428 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  88. Peculiar temperature dependence of electric-field effect on magnetic anisotropy in Co/Pd/MgO system Peer-reviewed

    Y. Hibino, T. Koyama, A. Obinata, T. Hirai, S. Ota, K. Miwa, S. Ono, F. Matsukura, H. Ohno, D. Chiba

    APPLIED PHYSICS LETTERS　109　(8)　082403(1)-082403(4)　2016/08

    DOI： 10.1063/1.4961621 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  89. Magnetic Properties of CoFeB-MgO Stacks With Different Buffer-Layer Materials (Ta or Mo) Peer-reviewed

    Kyota Watanabe, Shunsuke Fukami, Hideo Sato, Fumihiro Matsukura, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　52　(7)　3400904(1)-3400904(4)　2016/07

    DOI： 10.1109/TMAG.2016.2514525 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  90. Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy Peer-reviewed

    Shinya Ishikawa, Eli C. I. Enobio, Hideo Sato, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　52　(7)　3400704(1)-3400704(4)　2016/07

    DOI： 10.1109/TMAG.2016.2517098 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  91. Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition Peer-reviewed

    H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

    IEEE TRANSACTIONS ON MAGNETICS　52　(7)　3401104(1)-3401104(4)　2016/07

    DOI： 10.1109/TMAG.2016.2518203 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  92. Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB Peer-reviewed

    T. Dohi, S. Kanai, A. Okada, F. Matsukura, H. Ohno

    AIP ADVANCES　6　(7)　075017(1)-075017(4)　2016/07

    DOI： 10.1063/1.4959905 　

    ISSN： 2158-3226

  93. Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As Peer-reviewed

    S. Souma, L. Chen, R. Oszwaldowski, T. Sato, F. Matsukura, T. Dietl, H. Ohno, T. Takahashi

    SCIENTIFIC REPORTS　6　27266 (1)-27266 (10)　2016/06

    DOI： 10.1038/srep27266 　

    ISSN： 2045-2322

  94. Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system Peer-reviewed

    Shunsuke Fukami, Chaoliang Zhang, Samik DuttaGupta, Aleksandr Kurenkov, Hideo Ohno

    NATURE MATERIALS　15　(5)　535-+　2016/05

    DOI： 10.1038/NMAT4566 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  95. Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance Peer-reviewed

    S. Kanai, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　108　(19)　192406 (1)-192406 (3)　2016/05

    DOI： 10.1063/1.4948763 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  96. Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20 nm Peer-reviewed

    Shunsuke Fukami, Toru Iwabuchi, Hideo Sato, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　55　(4)　04EN01(1)-04EN01(4)　2016/04

    DOI： 10.7567/JJAP.55.04EN01 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  97. Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy Peer-reviewed

    Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa

    Japanese Journal of Applied Physics　55　(4)　04EE05(1)-04EE05(7)　2016/04/01

    Publisher: Japan Society of Applied Physics

    DOI： 10.7567/JJAP.55.04EE05 　

    ISSN： 1347-4065 0021-4922

  98. Electric field control of Skyrmions in magnetic nanodisks Peer-reviewed

    Y. Nakatani, M. Hayashi, S. Kanai, S. Fukami, H. Ohno

    APPLIED PHYSICS LETTERS　108　(15)　152403(1)-152403(5)　2016/04

    DOI： 10.1063/1.4945738 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  99. A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuration Peer-reviewed

    S. Fukami, T. Anekawa, C. Zhang, H. Ohno

    Nature Nanotechnology　1-6　2016/03/21

    DOI： 10.1038/nnano.2016.29 　

  100. Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions Peer-reviewed

    Zhongchang Wang, Mitsuhiro Saito, Keith P. McKenna, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Yuichi Ikuhara

    NANO LETTERS　16　(3)　1530-1536　2016/03

    DOI： 10.1021/acs.nanolett.5b03627 　

    ISSN： 1530-6984

    eISSN： 1530-6992

  101. Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li Peer-reviewed

    Shohei Miyakozawa, Lin Chen, Fumihiro Matsukura, Hideo Ohno

    APPLIED PHYSICS LETTERS　108　(11)　112404 (1)-112404 (3)　2016/03

    DOI： 10.1063/1.4944328 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  102. Magnetic stray-field studies of a single Cobalt nanoelement as a component of the building blocks of artificial square spin ice Peer-reviewed

    Merlin Pohlit, Fabrizio Porrati, Michael Huth, Yuzo Ohno, Hideo Ohno, Jens Mueller

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　400　206-212　2016/02

    DOI： 10.1016/j.jmmm.2015.08.072 　

    ISSN： 0304-8853

    eISSN： 1873-4766

  103. In-situ high-resolution ARPES study of (Ga,Mn)As

    Souma S, Chen L, Oszwałdowski R, Sato T, Matsukura F, Ditel T, Ohno H, Takahashi T

    Meeting Abstracts of the Physical Society of Japan　71　848-848　2016

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.71.2.0_848 　

  104. Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis Peer-reviewed

    Eriko Hirayama, Hideo Sato, Shun Kanai, Fumihiro Matsukura, Hideo Ohno

    IEEE MAGNETICS LETTERS　7　3104004(1)-3104004(4)　2016

    DOI： 10.1109/LMAG.2016.2568163 　

    ISSN： 1949-307X

  105. Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal Peer-reviewed

    S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura, H. Ohno

    Nature Physics　3593　1-5　2015/12/14

  106. Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis Peer-reviewed

    Y. Takeuchi, H. Sato, S. Fukami, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　107　(15)　152405(1)-152405(3)　2015/10

    DOI： 10.1063/1.4933256 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  107. Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy Peer-reviewed

    Sophie D'Ambrosio, Lin Chen, Hiroyasu Nakayama, Fumihiro Matsukura, Tomasz Dietl, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　54　(9)　093001(1)-093001(4)　2015/09

    DOI： 10.7567/JJAP.54.093001 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  108. Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate Peer-reviewed

    Fumihiro Matsukura, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　54　(9)　098003(1)-098003(2)　2015/09

    DOI： 10.7567/JJAP.54.098003 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  109. Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots Peer-reviewed

    Mohsen Ghali, Yuzo Ohno, Hideo Ohno

    APPLIED PHYSICS LETTERS　107　(12)　123102(1)-123102(5)　2015/09

    DOI： 10.1063/1.4931360 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  110. Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction Peer-reviewed

    E. Hirayama, S. Kanai, J. Ohe, H. Sato, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　107　(13)　132404(1)-132404(4)　2015/09

    DOI： 10.1063/1.4932092 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  111. Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO Peer-reviewed

    C. Zhang, S. Fukami, H. Sato, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　107　(1)　012401(1)-012401(4)　2015/07

    DOI： 10.1063/1.4926371 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  112. Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn) As Peer-reviewed

    Lin Chen, Fumihiro Matsukura, Hideo Ohno

    PHYSICAL REVIEW LETTERS　115　(5)　057204(1)-057204(5)　2015/07

    DOI： 10.1103/PhysRevLett.115.057204 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  113. Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing (vol 106, 142407, 2015) Peer-reviewed

    Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa

    APPLIED PHYSICS LETTERS　106　(24)　249901　2015/06

    DOI： 10.1063/1.4922749 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  114. Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure Peer-reviewed

    D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

    2015 Diguest of Technical Papers, Symp. VLSI Circuit　172-173　2015/06

  115. Inverse spin Hall effect in Pt/(Ga,Mn)As Peer-reviewed

    H. Nakayama, L. Chen, H. W. Chang, H. Ohno, F. Matsukura

    APPLIED PHYSICS LETTERS　106　(22)　222405(1)-222405(4)　2015/06

    DOI： 10.1063/1.4922197 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  116. Thermal stability of a magnetic domain wall in nanowires Peer-reviewed

    S. Fukami, J. Ieda, H. Ohno

    PHYSICAL REVIEW B　91　(23)　235401(1)-235401(7)　2015/06

    DOI： 10.1103/PhysRevB.91.235401 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  117. Driving Force in Diffusion and Redistribution of Reducing Agents during Redox Reaction on the Surface of CoFeB Film Peer-reviewed

    S. Sato, H. Honjo, S. Ikeda, H. Ohno, M. Niwa, T. Endoh

    IEEE. Transactions on Magnetics　PP　(99)　1　2015/05/19

    DOI： 10.1109/TMAG.2015.2434840 　

  118. 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance Peer-reviewed

    H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, M. Muraguchi, M. Niwa, K. Ito, S. Ikeda, H. Ohno, T. Endoh

    2015 IEEE International Memory Workshop　1-4　2015/05/17

    DOI： 10.1109/IMW.2015.7150264 　

  119. Diffusion Behaviors Observed on the Surface of CoFeB Film after the Natural Oxidation and the Annealing Peer-reviewed

    S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa

    2015 IEEE Magnetic Conference (INTERMAG2015)　GP-01　2015/05/15

    DOI： 10.1109/INTMAG.2015.7157496 　

  120. Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions Peer-reviewed

    E. Hirayama, S. Kanai, H. Sato, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　117　(17)　17B708(1)-17B708(4)　2015/05

    DOI： 10.1063/1.4908149 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  121. Nanocluster building blocks of artificial square spin ice: Stray-field studies of thermal dynamics Peer-reviewed

    Merlin Pohlit, Fabrizio Porrati, Michael Huth, Yuzo Ohno, Hideo Ohno, Jens Mueller

    JOURNAL OF APPLIED PHYSICS　117　(17)　17C746(1)-17C746(4)　2015/05

    DOI： 10.1063/1.4917497 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  122. Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing Peer-reviewed

    Soshi Sato, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Masaaki Niwa

    Applied Physics Letters　106　(14)　142407(1)-142407(5)　2015/04/06

    Publisher: American Institute of Physics Inc.

    DOI： 10.1063/1.4917277 　

    ISSN： 0003-6951

  123. In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis Peer-reviewed

    Eriko Hirayama, Shun Kanai, Koji Sato, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DM03(1)-04DM03(3)　2015/04

    DOI： 10.7567/JJAP.54.04DM03 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  124. Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses Peer-reviewed

    Kyota Watanabe, Shinya Ishikawa, Hideo Sato, Shoji Ikeda, Michihiko Yamanouchi, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DM04(1)-04DM04(3)　2015/04

    DOI： 10.7567/JJAP.54.04DM04 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  125. Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact Peer-reviewed

    Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Keiichi Tokutome, Hiroaki Koike, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DM06(1)-04DM06(4)　2015/04

    DOI： 10.7567/JJAP.54.04DM06 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  126. Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation Peer-reviewed

    Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

    JAPANESE JOURNAL OF APPLIED PHYSICS　54　(4)　04DE08(1)-04DE08(5)　2015/04

    DOI： 10.7567/JJAP.54.04DE08 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  127. Nature Nanotechnology Peer-reviewed

    F. Matsuura, Y. Tokura, H. Ohno

    Nature Nanotechnology　10　209-220　2015/03/05

  128. Control of magnetism by electric fields Peer-reviewed

    Fumihiro Matsukura, Yoshinori Tokura, Hideo Ohno

    NATURE NANOTECHNOLOGY　10　(3)　209-220　2015/03

    DOI： 10.1038/NNANO.2015.22 　

    ISSN： 1748-3387

    eISSN： 1748-3395

  129. Localized precessional mode of domain wall controlled by magnetic field and dc current Peer-reviewed

    Ryo Hiramatsu, Kab-Jin Kim, Takuya Taniguchi, Takayuki Tono, Takahiro Moriyama, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Ohno, Yoshinobu Nakatani, Teruo Ono

    APPLIED PHYSICS EXPRESS　8　(2)　023003(1)-023003(4)　2015/02

    DOI： 10.7567/APEX.8.023003 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  130. Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction Peer-reviewed

    Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    IEEE JOURNAL OF SOLID-STATE CIRCUITS　50　(2)　476-489　2015/02

    DOI： 10.1109/JSSC.2014.2362853 　

    ISSN： 0018-9200

    eISSN： 1558-173X

  131. Spintronics: from basic research to VLSI application Peer-reviewed

    S. Kanai, F. Matsukura, H. Sato, S. Fukami

    Association of Aisa Pacific Physical Societies, AAPPS　25　4-11　2015/02

  132. 17pCB-8 Electric field manipulation of magnetic anisotropy and its application

    Kanai S., Matsukura F., Ohno H.

    Meeting Abstracts of the Physical Society of Japan　70　2288-2288　2015

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.2.0_2288 　

    ISSN： 2189-079X

  133. 23pAD-1 Magnetic domain-wall oscillator controlled by magnetic field and dc current

    Hiramatsu R., Kim Kab-Jin, Taniguchi T., Tono T., Moriyama T., Fukami S., Yamanouchi M., Ohno H., Nakatani Y., Ono T.

    Meeting Abstracts of the Physical Society of Japan　70　1196-1196　2015

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.1.0_1196 　

    ISSN： 2189-079X

  134. CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures Peer-reviewed

    Eli Christopher I. Enobio, Hideo Sato, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

    IEEE MAGNETICS LETTERS　6　5700303(1)-5700303(3)　2015

    DOI： 10.1109/LMAG.2015.2475718 　

    ISSN： 1949-307X

  135. Magnetic anisotropy in Ta/CoFeB/MgO investigated by x-ray magnetic circular dichroism and first-principles calculation Peer-reviewed

    Shun Kanai, Masahito Tsujikawa, Yoshio Miura, Masafumi Shirai, Fumihiro Matsukura, Hideo Ohno

    APPLIED PHYSICS LETTERS　105　(22)　222409(1)-222409(4)　2014/12

    DOI： 10.1063/1.4903296 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  136. A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture Peer-reviewed

    Hooman Jarollahi, Naoya Onizawa, Vincent Gripon, Noboru Sakimura, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Warren J. Gross

    IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS　4　(4)　460-474　2014/12

    DOI： 10.1109/JETCAS.2014.2361061 　

    ISSN： 2156-3357

  137. Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages Peer-reviewed

    Shun Kanai, Martin Gajek, D. C. Worledge, Fumihiro Matsukura, Hideo Ohno

    APPLIED PHYSICS LETTERS　105　(24)　242409(1)-242409(4)　2014/12

    DOI： 10.1063/1.4904956 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  138. Material stack design with high tolerance to process induced damage in domain wall motion device Peer-reviewed

    H. Honjo, S. Fukami, K. Ishihara, K. Kinoshita, Y. Tsuji, A. Morioka, R. Nebashi, K. Tokutome, N. Sakimura, M. Murahata, S. Miura, T. Sugibayashi, N. Kasai, H. Ohno

    IEEE Transaction on Magnetics　50　(11)　1401904-1401904　2014/11/18

    DOI： 10.1109/TMAG.2014.2325019 　

    ISSN： 0018-9464

  139. Domain Wall Motion Device for Nonvolatile Memory and Logic - Size Dependence of Device Properties Peer-reviewed

    Shunsuke Fukami, Michihiko Yamanouchi, Shoji Ikeda, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　50　(11)　3401006(1)-3401006(6)　2014/11

    DOI： 10.1109/TMAG.2014.2321396 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  140. Process-induced damage and its recovery for a CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy axis Peer-reviewed

    Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Hideo Sato, Kotaro Mizunuma, Keiichi Tokutome, Michio Murahata, Shoji Ikeda, Sadahiko Miura, Naoki Kasai, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　53　(10)　103001(1)-103001(6)　2014/10

    DOI： 10.7567/JJAP.53.103001 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  141. Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions Peer-reviewed

    Daisuke Kobayashi, Yuya Kakehashi, Kazuyuki Hirose, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Shoji Ikeda, Michihiko Yamanouchi, Hideo Sato, Eli Christopher Enobio, Tetsuo Endoh, Hideo Ohno

    IEEE TRANSACTIONS ON NUCLEAR SCIENCE　61　(4)　1710-1716　2014/08

    DOI： 10.1109/TNS.2014.2304738 　

    ISSN： 0018-9499

    eISSN： 1558-1578

  142. Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance Peer-reviewed

    A. Okada, S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　105　(5)　052415-(1)-052415-(4)　2014/08

    DOI： 10.1063/1.4892824 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  143. Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm Peer-reviewed

    H. Sato, E. C. I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　105　(6)　062403(1)-062403(4)　2014/08

    DOI： 10.1063/1.4892924 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  144. Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers Peer-reviewed

    Jacob Torrejon, Junyeon Kim, Jaivardhan Sinha, Seiji Mitani, Masamitsu Hayashi, Michihiko Yamanouchi, Hideo Ohno

    NATURE COMMUNICATIONS　5　(4693)　5693-(1)-5693-(8)　2014/08

    DOI： 10.1038/ncomms5655 　

    ISSN： 2041-1723

  145. Properties of (Ga,Mn)As codoped with Li Peer-reviewed

    Shohei Miyakozawa, Lin Chen, Fumihiro Matsukura, Hideo Ohno

    APPLIED PHYSICS LETTERS　104　(22)　222408-(1)-222408-(4)　2014/06

    DOI： 10.1063/1.4881636 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  146. Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer Peer-reviewed

    S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　115　(17)　17C719(1)-17C719(3)　2014/05

    DOI： 10.1063/1.4862724 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  147. Distribution of critical current density for magnetic domain wall motion Peer-reviewed

    S. Fukami, M. Yamanouchi, Y. Nakatani, K. -J. Kim, T. Koyama, D. Chiba, S. Ikeda, N. Kasai, T. Ono, H. Ohno

    JOURNAL OF APPLIED PHYSICS　115　(17)　17D508(1)-17D508(3)　2014/05

    DOI： 10.1063/1.4866394 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  148. Anomalous temperature dependence of current-induced torques in CoFeB/MgO heterostructures with Ta-based underlayers Peer-reviewed

    Junyeon Kim, Jaivardhan Sinha, Seiji Mitani, Masamitsu Hayashi, Saburo Takahashi, Sadamichi Maekawa, Michihiko Yamanouchi, Hideo Ohno

    PHYSICAL REVIEW B　89　(17)　174424-(1)-174424-(8)　2014/05

    DOI： 10.1103/PhysRevB.89.174424 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  149. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect Peer-reviewed

    S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, H. Sato, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　104　(21)　212406(1)-212406(3)　2014/05

    DOI： 10.1063/1.4880720 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  150. Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs Peer-reviewed

    Hideo Sato, Shoji Ikeda, Shunsuke Fukami, Hiroaki Honjo, Shinya Ishikawa, Michihiko Yamanouchi, Kotaro Mizunuma, Fumihiro Matsukura, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04EM02(1)-04EM02(3)　2014/04

    DOI： 10.7567/JJAP.53.04EM02 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  151. Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires Peer-reviewed

    Jun Ishihara, Yuzo Ohno, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　53　(4)　04EM04(1)-04EM04(3)　2014/04

    DOI： 10.7567/JJAP.53.04EM04 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  152. Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements Peer-reviewed

    Masamitsu Hayashi, Junyeon Kim, Michihiko Yamanouchi, Hideo Ohno

    PHYSICAL REVIEW B　89　(14)　144425-(1)-144425-(15)　2014/04

    DOI： 10.1103/PhysRevB.89.144425 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  153. MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability Peer-reviewed

    H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    Journal of the Magnetics Society of Japan　38　(No. 2-2)　56-60　2014/03/20

    DOI： 10.3379/msjmag.1403R002 　

  154. Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well Peer-reviewed

    M. Ono, J. Ishihara, G. Sato, S. Matsuzaka, Y. Ohno, H. Ohno

    PHYSICAL REVIEW B　89　(11)　115308(1)-115308(4)　2014/03

    DOI： 10.1103/PhysRevB.89.115308 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  155. Dilute ferromagnetic semiconductors: Physics and spintronic structures Peer-reviewed

    Tomasz Dietl, Hideo Ohno

    REVIEWS OF MODERN PHYSICS　86　(1)　187-251　2014/03

    DOI： 10.1103/RevModPhys.86.187 　

    ISSN： 0034-6861

    eISSN： 1539-0756

  156. Journal of Applied Physics Peer-reviewed

    C. Zhang, M. Yamanouchi, H .Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno

    Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis　115　17C714(1)-17C714(3)　2014/01/29

  157. Plasma process induced physical damages on ultra-thin multilayered films for magnetic domain wall motion devices Peer-reviewed

    K. Kinoshita, H. Honjo, S. Fukami, R. Nebashi, S. Miura, N. Kasai, S. Ikeda, H. Ohno

    Japanese Journal of Applied Physics　53　(3 SPEC. ISSUE 2)　2014

    DOI： 10.7567/JJAP.53.03DF03 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  158. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer Peer-reviewed

    H. Honjo, S. Fukami, K. Ishihara, R. Nebashi, K. Kinoshita, K. Tokutome, M. Murahata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

    Journal of Applied Physics　115　(17)　17B750　2014

    DOI： 10.1063/1.4868623 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  159. IEEE Transactions on Magnetics Peer-reviewed

    S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, H. Ohno

    Electric field-induced magnetization switching in CoFeB-MgO-static magnetic field angle dependence　50　(1)　4200103(1)-4200103(3)　2014/01

  160. Applied Physics Express Peer-reviewed

    J. Ishihara, Y. Ohno, H. Ohno

    Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well　7　013001(1)-013001(4)　2014/01

  161. Applied Physics Express Peer-reviewed

    L. Chen, S. Ikeda, F. Matsukura, H. Ohno

    DC voltages in Py and Py/Pt under ferromagnetic resonance　7　013002(1)-013002(4)　2014/01

  162. Applied Physics Letters Peer-reviewed

    C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno

    Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO　103　262407(1)-262407(3)　2013/12/31

  163. Applied Physics Letters Peer-reviewed

    E. C. I. Enobio, K. Ohtani, Y. Ohno, H. Ohno

    Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope　103　231106(1)-231106(4)　2013/12/04

  164. Fabrication of a Perpendicular-MTJ-Based Compact Nonvolatile Programmable Switch Using Shared-Write-Control-Transistor Structure Peer-reviewed

    D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

    Abst. 58th Annual Conference on Magnetism and Magnetic Materials　233　2013/11

  165. MTJ resistance distribution and its bit error rate of 1-kbit 1T-1MTJ STT-MRAM cell arrays fabricated on a 300-mm wafer Peer-reviewed

    H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno

    58th Annual Conference on Magnetism & Magnetic Materials Abstract　2013/11

  166. Applied Physics Express Peer-reviewed

    M. Kawaguchi, K. Shimamura, S. Fukami, F. Matsukura, H. Ohno, T. Moriyama, D. Chiba, T. Ono

    Current-induced effectivve fields detected by magnetotransport measurements　6　113002(1)-113002(4)　2013/10/18

  167. Applied Physics Letters Peer-reviewed

    D. Chiba, T. Ono, F. Matsukura, H. Ohno

    Electric field control of thermal stability and magnetization switching in (Ga,Mn)As　103　142418(1)-142418(4)　2013/10/04

  168. Spintronics-based integrated circuits and contribution to energy saving society

    Hideo Ohno, Takahiro Hanyu, Shoji Ikeda, Tetsuo Endoh, Yasuo Ando, Naoki Kasai

    Journal of the Institute of Electronics, Information and Communication Engineers　96　(10)　771-775　2013/10

    ISSN： 0913-5693

  169. Applied Physics Letters Peer-reviewed

    H. W. Chang, S. Akita, F. Matsukura, H. Ohno

    Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure　103　142402(1)-142402(4)　2013/09/30

  170. Applied Physics Letters Peer-reviewed

    S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno

    In-plane magnetic field dependence of electric field-induced magnetization switching　103　072408(1)-072408(4)　2013/08/16

  171. Nature Communications Peer-reviewed

    S. Fukami, M. Yamanouchi, S. Ikeda, H. Ohno

    Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents　4　1-7　2013/08/15

  172. Applied Physics Express Peer-reviewed

    S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, H. Ohno

    CoNi films with perpendicular magnetic anisotropy prepared by alternate monoatomic layer deposition　6　073010(1)-073010(3)　2013/07/09

  173. IEEE Transactions on Magnetics Peer-reviewed

    H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis　49　(7)　4437-4440　2013/07/07

  174. IEEE Journal of Solid-State Circuits Peer-reviewed

    T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme　48　(6)　1511-1520　2013/06/22

  175. Nature Communications Peer-reviewed

    L. Chen, F. Matsukura, H. Ohno

    Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance　4　1-6　2013/06/20

  176. Applied Physics Letters Peer-reviewed

    J. Sinha, M. Hayashi, A. J. Kellock, S. Fukami, M. Yamanouchi, H. Sato, S. Ikeda, S. Mitani, S. H. Yang, S. S. P. Parkin, H. Ohno

    Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers　102　l 242405(1)-l 242405(4)　2013/06/18

  177. Nature Communications Peer-reviewed

    K. J. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba, K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, H. Kohno, G. Tatara, T. Ono

    Two-barrier stability that allows low-power operation in current-induced domain-wall motion　4　1-6　2013/06/17

  178. Applied Physics Letters Peer-reviewed

    S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, H. Ohno

    Electrical endurance of Co/Ni wire for magnetic domain wall motion device　102　222410(1)-222410(4)　2013/06/06

  179. Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine Peer-reviewed

    S. Matsunaga, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, M. Natsui, A. Mochizuki, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

    2013 Symposium on VLSI Circuits Digest of Technical Papers　106-107　2013/06

  180. Applied Physics Letters Peer-reviewed

    M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, S. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno

    Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper　102　212408(1)-212408(4)　2013/05/30

  181. Applied Physics Letters Peer-reviewed

    J. Ishihara, M. Ono, Y. Ohno, H. Ohno

    A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires　102　212402(1)-212402(4)　2013/05/28

  182. Applied Physics Express Peer-reviewed

    K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, H. Ohno

    Size dependence of magnetic properties of nanoscale CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic easy axis observed by ferromagnetic resonance　6　063002(1)-063002(3)　2013/05/22

  183. Journal of Applied Physics Peer-reviewed

    S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer　113　17C721(1)-17C721(3)　2013/04/03

  184. Bridging semiconductor and magnetism Peer-reviewed

    H. Ohno

    JOURNAL OF APPLIED PHYSICS　113　(13)　136509(1)-136509(5)　2013/04

    DOI： 10.1063/1.4795537 　

    ISSN： 0021-8979

  185. Journal of Applied Physics Invited

    H. Ohno

    Bridging semiconductor and magnetism　113　136509(1)-136509(5)　2013/03/29

  186. Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field Peer-reviewed

    Masaaki Ono, Jun Ishihara, Genki Sato, Yuzo Ohno, Hideo Ohno

    APPLIED PHYSICS EXPRESS　6　(3)　033002(1)-033002(3)　2013/03

    DOI： 10.7567/APEX.6.033002 　

    ISSN： 1882-0778

  187. Nature Materials Peer-reviewed

    J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani, H. Ohno

    Layer thickness dependence of the current-induced effective field vector in Ta/CoFeB/MgO　12　240-245　2013/03

  188. Applied Physics Express Peer-reviewed

    M. Ono, J. Ishihara, G. Sato, Y. Ohno, H. Ohno

    Coherent manipulation of nuclear spins in semiconductors with an electric field　6　033002(1)-033002(3)　2013/02/28

  189. Physical Review B Peer-reviewed

    L. R. Fleet, K. Yoshida, H. Kobayaashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, A. Hirohata

    Correlating the interface structure to spin injection in abrupt Fe/GaAs(001)films　87　024401(1)-024401(5)　2013/01/02

  190. Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope

    Enobio, E.C.I., Ohtani, K., Ohno, Y., Ohno, H.

    Applied Physics Letters　103　(23)　2013

    DOI： 10.1063/1.4839421 　

  191. Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

    T. Suzuki, H. Tanigawa, Y. Kobayashi, K. Mori, Y. Ito, Y. Ozaki, K. Suemitsu, T. Kitamura, K. Nagahara, E. Kariyada, N. Ohshima, S. Fukami, M. Yamanouchi, S. Ikeda, M. Hayashi, M. Sakao, H. Ohno

    Digest of Technical Papers - Symposium on VLSI Technology　2013

    ISSN： 0743-1562

  192. Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications Peer-reviewed

    D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

    IEICE Electronics Express　10　(23)　20130772　2013

    DOI： 10.1587/elex.10.20130772 　

    ISSN： 1349-2543

  193. Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films Peer-reviewed

    L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, A. Hirohata

    PHYSICAL REVIEW B　87　(2)　024401(1)-024401(5)　2013/01

    DOI： 10.1103/PhysRevB.87.024401 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  194. Layer thickness dependence of the current-induced effective field vector in Ta/CoFeB/MgO Peer-reviewed

    J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani, H. Ohno

    Nature Materials　12　1-6　2012/12/23

    DOI： 10.1038/nmat3522 　

  195. Spin Peer-reviewed

    S. Ikeda, H. Sato, M. Yamanouchi, H. Gan, K. Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, N. Kasai, H. Ohno

    Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI　2　(3)　1240003(1)-1240003(12)　2012/12/04

    DOI： 10.4018/ijfsa.2012070101 　

  196. Applied Physics Letters Peer-reviewed

    A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S. H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, C. S. Fadley

    Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission　101　202402(1)-202402(4)　2012/11/12

  197. Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures Peer-reviewed

    Shoji Ikeda, Ryohei Koizumi, Hideo Sato, Michihiko Yamanouchi, Katsuya Miura, Kotaro Mizunuma, Huadong Gan, Fumihiro Matsukura, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　48　(11)　3829-3832　2012/11

    DOI： 10.1109/TMAG.2012.2203588 　

    ISSN： 0018-9464

  198. IEEE Transactions on Magnetics Peer-reviewed

    S. Ikeda, R. Koizumi, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. Gan, F. Matsukura, H. Ohno

    Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO/CoFe(B) based stack structures　48　(11)　3829-3832　2012/11

  199. Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission Peer-reviewed

    A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S. -H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, C. S. Fadley

    APPLIED PHYSICS LETTERS　101　(20)　202402(1)-202402(4)　2012/11

    DOI： 10.1063/1.4766351 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  200. Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown Peer-reviewed

    T. Koyama, K. Ueda, K. -J. Kim, Y. Yoshimura, D. Chiba, K. Yamada, J. -P. Jamet, A. Mougin, A. Thiaville, S. Mizukami, S. Fukami, N. Ishiwata, Y. Nakatani, H. Kohno, K. Kobayashi, T. Ono

    NATURE NANOTECHNOLOGY　7　(10)　635-639　2012/10

    DOI： 10.1038/nnano.2012.151 　

    ISSN： 1748-3387

    eISSN： 1748-3395

  201. On the influence of nanometer-thin antiferromagnetic surface layer on ferromagnetic CrO2 Peer-reviewed

    P. Das, A. Bajpai, Y. Ohno, H. Ohno, J. Mueller

    JOURNAL OF APPLIED PHYSICS　112　(5)　053921(1)-053921(4)　2012/09

    DOI： 10.1063/1.4751350 　

    ISSN： 0021-8979

  202. Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars Peer-reviewed

    D. Marko, T. Devolder, K. Miura, K. Ito, Joo-Von Kim, C. Chappert, S. Ikeda, H. Ohno

    JOURNAL OF APPLIED PHYSICS　112　(5)　053922(1)-053922(4)　2012/09

    DOI： 10.1063/1.4751025 　

    ISSN： 0021-8979

  203. Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction Invited Peer-reviewed

    S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　101　(12)　122403(1)-122403(3)　2012/09

    DOI： 10.1063/1.4753816 　

    ISSN： 0003-6951

  204. Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions Peer-reviewed

    Keizo Kinoshita, Tadashi Yamamoto, Hiroaki Honjo, Naoki Kasai, Shoji Ikeda, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(8)　08HA01(1)-08HA01(6)　2012/08

    DOI： 10.1143/JJAP.51.08HA01 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  205. Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device Peer-reviewed

    Shunsuke Fukami, Nobuyuki Ishiwata, Naoki Kasai, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　48　(7)　2152-2157　2012/07

    DOI： 10.1109/TMAG.2012.2187792 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  206. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure Peer-reviewed

    H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　101　(2)　022414(1)-022414(4)　2012/07

    DOI： 10.1063/1.4736727 　

    ISSN： 0003-6951

  207. Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields Peer-reviewed

    Yoko Yoshimura, Tomohiro Koyama, Daichi Chiba, Yoshinobu Nakatani, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Ohno, Teruo Ono

    APPLIED PHYSICS EXPRESS　5　(6)　063001(1)-063001(3)　2012/06

    DOI： 10.1143/APEX.5.063001 　

    ISSN： 1882-0778

  208. Electric Field Effect on Magnetization of an Fe Ultrathin Film Peer-reviewed

    Masashi Kawaguchi, Kazutoshi Shimamura, Shimpei Ono, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno, Daichi Chiba, Teruo Ono

    APPLIED PHYSICS EXPRESS　5　(6)　063007(1)-063007(3)　2012/06

    DOI： 10.1143/APEX.5.063007 　

    ISSN： 1882-0778

  209. Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons Peer-reviewed

    Mohsen Ghali, Keita Ohtani, Yuzo Ohno, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(6)　06FE14(1)-06FE14(3)　2012/06

    DOI： 10.1143/JJAP.51.06FE14 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  210. Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope Peer-reviewed

    Eli Christopher I. Enobio, Hiroki Sato, Keita Ohtani, Yuzo Ohno, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(6)　06FE15(1)-06FE15(3)　2012/06

    DOI： 10.1143/JJAP.51.06FE15 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  211. Spin-motive force due to a gyrating magnetic vortex Peer-reviewed

    K. Tanabe, D. Chiba, J. Ohe, S. Kasai, H. Kohno, S. E. Barnes, S. Maekawa, K. Kobayashi, T. Ono

    NATURE COMMUNICATIONS　3　2012/05

    DOI： 10.1038/ncomms1824 　

    ISSN： 2041-1723

  212. Dependence of Magnetic Anisotropy in Co20Fe60B20 Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis Peer-reviewed

    Hiroyuki Yamamoto, Jun Hayakawa, Katsuya Miura, Kenchi Ito, Hideyuki Matsuoka, Shoji Ikeda, Hideo Ohno

    APPLIED PHYSICS EXPRESS　5　(5)　053002(1)-053002(3　2012/05

    DOI： 10.1143/APEX.5.053002 　

    ISSN： 1882-0778

  213. Current-induced torques in magnetic materials Peer-reviewed

    Arne Brataas, Andrew D. Kent, Hideo Ohno

    NATURE MATERIALS　11　(5)　372-381　2012/05

    DOI： 10.1038/NMAT3311 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  214. Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB vertical bar MgO nanostructures Peer-reviewed

    Masamitsu Hayashi, Michihiko Yamanouchi, Shunsuke Fukami, Jaivardhan Sinha, Seiji Mitani, Hideo Ohno

    APPLIED PHYSICS LETTERS　100　(19)　192411(1)-192411(4)　2012/05

    DOI： 10.1063/1.4711016 　

    ISSN： 0003-6951

  215. Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate Peer-reviewed

    Li Li, Y. Guo, X. Y. Cui, Rongkun Zheng, K. Ohtani, C. Kong, A. V. Ceguerra, M. P. Moody, J. D. Ye, H. H. Tan, C. Jagadish, Hui Liu, C. Stampfl, H. Ohno, S. P. Ringer, F. Matsukura

    PHYSICAL REVIEW B　85　(17)　174430(1)-174430(8)　2012/05

    DOI： 10.1103/PhysRevB.85.174430 　

    ISSN： 1098-0121

  216. Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions Peer-reviewed

    H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

    JOURNAL OF APPLIED PHYSICS　111　(7)　C7C903(1)-C7C903(3)　2012/04

    DOI： 10.1063/1.3671437 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  217. Six-input lookup table circuit with 62 fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions Peer-reviewed

    D. Suzuki, M. Natsui, T. Endoh, H. Ohno, T. Hanyu

    Journal of Applied Physics　111　(7)　07E318(1)-07E318(3)　2012/04/01

    DOI： 10.1063/1.3672411 　

    ISSN： 0021-8979

  218. Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits Peer-reviewed

    H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

    JOURNAL OF APPLIED PHYSICS　111　(7)　07C709(1)-07C709(3)　2012/04

    DOI： 10.1063/1.3675268 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  219. Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory Peer-reviewed

    Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    JOURNAL OF APPLIED PHYSICS　111　(7)　07E336(1)-07E336(3)　2012/04

    DOI： 10.1063/1.3677875 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  220. Spin-transfer torque RAM technology: Review and prospect Peer-reviewed

    T. Kawahara, K. Ito, R. Takemura, H. Ohno

    MICROELECTRONICS RELIABILITY　52　(4)　613-627　2012/04

    DOI： 10.1016/j.microrel.2011.09.028 　

    ISSN： 0026-2714

  221. Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal-Oxide-Semiconductor Hybrid Structure Peer-reviewed

    Daisuke Suzuki, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(4)　04DM02(1)-04DM02(5)　2012/04

    DOI： 10.1143/JJAP.51.04DM02 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  222. Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures Peer-reviewed

    S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, H. D. Gan, S. Ikeda, H. Ohno

    JOURNAL OF APPLIED PHYSICS　111　(8)　083922(1)-083922(8)　2012/04

    DOI： 10.1063/1.4707964 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  223. A Content Adddressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells Invited Peer-reviewed

    R. Nebashi, N. Sakimura, Y Tsuji, S. Fukami, H. Honjo, S. Saito, S.Miura, N.Ishiwata, K. kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

    The 2nd CSIS International Symposium on Spintronics-based VLSIs　F7　24-24　2012/02/02

  224. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field Peer-reviewed

    Mohsen Ghali, Keita Ohtani, Yuzo Ohno, Hideo Ohno

    NATURE COMMUNICATIONS　3　2012/02

    DOI： 10.1038/ncomms1657 　

    ISSN： 2041-1723

  225. High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction Peer-reviewed

    Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BD01(1)-02BD01(6)　2012/02

    DOI： 10.1143/JJAP.51.02BD01 　

    ISSN： 0021-4922

  226. Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme Peer-reviewed

    Fumitaka Iga, Yasuhiro Yoshida, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BM02(1)-02BM02(5)　2012/02

    DOI： 10.1143/JJAP.51.02BM02 　

    ISSN： 0021-4922

  227. Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory Peer-reviewed

    Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BM06(1)-02BM06(5)　2012/02

    DOI： 10.1143/JJAP.51.02BM06 　

    ISSN： 0021-4922

  228. Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions Peer-reviewed

    M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, H. Ohno

    JOURNAL OF APPLIED PHYSICS　111　(4)　043913(1)-043913(3)　2012/02

    DOI： 10.1063/1.3688039 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  229. Domain wall dynamics driven by spin transfer torque and the spin-orbit field Peer-reviewed

    Masamitsu Hayashi, Yoshinobu Nakatani, Shunsuke Fukami, Michihiko Yamanouchi, Seiji Mitani, Hideo Ohno

    JOURNAL OF PHYSICS-CONDENSED MATTER　24　(2)　024221(1)-024221(8)　2012/01

    DOI： 10.1088/0953-8984/24/2/024221 　

    ISSN： 0953-8984

  230. CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions Peer-reviewed

    H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, H. Ohno

    IEEE MAGNETICS LETTERS　3　3000204(1)-3000204(4)　2012

    DOI： 10.1109/LMAG.2012.2190722 　

    ISSN： 1949-307X

  231. Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions Peer-reviewed

    H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　99　(25)　252507(1)-252507(3)　2011/12

    DOI： 10.1063/1.3671669 　

    ISSN： 0003-6951

  232. Reduction of intrinsic critical current density under a magnetic field along the hard axis of a free layer in a magnetic tunnel junction Peer-reviewed

    Katsuya Miura, Ryoko Sugano, Masahiko Ichimura, Jun Hayakawa, Shoji Ikeda, Hideo Ohno, Sadamichi Maekawa

    PHYSICAL REVIEW B　84　(17)　174434(1)-174434(7)　2011/11

    DOI： 10.1103/PhysRevB.84.174434 　

    ISSN： 1098-0121

  233. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions Peer-reviewed

    H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　99　(4)　042501(1)-042501(3)　2011/07

    DOI： 10.1063/1.3617429 　

    ISSN： 0003-6951

  234. Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures Peer-reviewed

    Huadong Gan, Shoji Ikeda, Michihiko Yamanouchi, Katsuya Miura, Kotaro Mizunuma, Jun Hayakawa, Fumihiro Matsukura, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　47　(6)　1567-1570　2011/06

    DOI： 10.1109/TMAG.2010.2104137 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  235. Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme Peer-reviewed

    Shoun Matsunaga, Masanori Natsui, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    JAPANESE JOURNAL OF APPLIED PHYSICS　50　(6)　063004-(1)-063004-(7)　2011/06

    DOI： 10.1143/JJAP.50.063004 　

    ISSN： 0021-4922

  236. Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures Peer-reviewed

    K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　109　(7)　07C711-(1)-07C711-(3)　2011/04

    DOI： 10.1063/1.3554092 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  237. Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure Peer-reviewed

    M. Yamanouchi, R. Koizumi, S. Ikeda, H. Sato, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　109　(7)　07C712-(1)-07C712-(3)　2011/04

    DOI： 10.1063/1.3554204 　

    ISSN： 0021-8979

  238. Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire Peer-reviewed

    T. Suzuki, S. Fukami, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, H. Ohno

    APPLIED PHYSICS LETTERS　98　(14)　142505-(1)-142505-(3)　2011/04

    DOI： 10.1063/1.3579155 　

    ISSN： 0003-6951

  239. Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions Peer-reviewed

    T. Devolder, L. Bianchini, K. Miura, K. Ito, Joo-Von Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, H. Ohno

    APPLIED PHYSICS LETTERS　98　(16)　162502-(1)-162502-(3)　2011/04

    DOI： 10.1063/1.3576937 　

    ISSN： 0003-6951

  240. Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well Peer-reviewed

    Jun Ishihara, Masaaki Ono, Genki Sato, Shunichiro Matsuzaka, Yuzo Ohno, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　50　(4)　04DM03-(1)-04DM03-(3)　2011/04

    DOI： 10.1143/JJAP.50.04DM03 　

    ISSN： 0021-4922

  241. Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond Peer-reviewed

    R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno

    SOLID-STATE ELECTRONICS　58　(1)　28-33　2011/04

    DOI： 10.1016/j.sse.2010.11.032 　

    ISSN： 0038-1101

    eISSN： 1879-2405

  242. Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers Peer-reviewed

    Kotaro Mizunuma, Michihiko Yamanouchi, Shoji Ikeda, Hideo Sato, Hiroyuki Yamamoto, Hua-Dong Gan, Katsuya Miura, Jun Hayakawa, Fumihiro Matsukura, Hideo Ohno

    APPLIED PHYSICS EXPRESS　4　(2)　023002-(1)-023002-(3)　2011/02

    DOI： 10.1143/APEX.4.023002 　

    ISSN： 1882-0778

  243. Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire Peer-reviewed

    S. Fukami, T. Suzuki, Y. Nakatani, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, H. Ohno

    APPLIED PHYSICS LETTERS　98　(8)　082504-(1)-082504-(3)　2011/02

    DOI： 10.1063/1.3558917 　

    ISSN： 0003-6951

  244. Magnetic anisotropy modulation in Ta/CoFeB/MgO structure by electric fields Peer-reviewed

    S. Kanai, M. Endo, S. Ikeda, F. Matsukura, H. Ohno

    Journal of Physics; Conference Series　266　012092(1)-012092(5)　2011/01/28

  245. Electric-Field Effects on Magnetic Materials –From Ferromagnetic Semiconductors to CoFeB-

    H. Ohno

    Magnetics and Optics Research International Symposium for New Storage Technology(MORIS2011)　2011

  246. Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy Peer-reviewed

    Michihiko Yamanouchi, Albrecht Jander, Pallavi Dhagat, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

    IEEE MAGNETICS LETTERS　2　3000304(1)-3000304(4)　2011

    DOI： 10.1109/LMAG.2011.2159484 　

    ISSN： 1949-307X

  247. Domain wall dynamics in a single CrO(2) grain Peer-reviewed

    P. Das, F. Porrati, S. Wirth, A. Bajpai, Y. Ohno, H. Ohno, M. Huth, J. Mueller

    JOINT EUROPEAN MAGNETIC SYMPOSIA (JEMS)　303　012056-(1)-012056-(6)　2011

    DOI： 10.1088/1742-6596/303/1/012056 　

    ISSN： 1742-6588

  248. A window on the future of spintronics Invited

    Hideo Ohno

    NATURE MATERIALS　9　(12)　952-954　2010/12

    DOI： 10.1038/nmat2913 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  249. Electrically Defined Ferromagnetic Nanodots Peer-reviewed

    Daichi Chiba, Fumihiro Matsukura, Hideo Ohno

    NANO LETTERS　10　(11)　4505-4508　2010/11

    DOI： 10.1021/nl102379h 　

    ISSN： 1530-6984

    eISSN： 1530-6992

  250. Observation of the fractional quantum Hall effect in an oxide Peer-reviewed

    A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A. Ohtomo, M. Kawasaki

    NATURE MATERIALS　9　(11)　889-893　2010/11

    DOI： 10.1038/NMAT2874 　

    ISSN： 1476-1122

  251. Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As Peer-reviewed

    M. Endo, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　97　(22)　222501-1-222501-3　2010/11

    DOI： 10.1063/1.3520514 　

    ISSN： 0003-6951

  252. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction Peer-reviewed

    S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, H. Ohno

    NATURE MATERIALS　9　(9)　721-724　2010/09

    DOI： 10.1038/NMAT2804 　

    ISSN： 1476-1122

  253. Band-tail shape and transport near the metal-insulator transition in Si-doped Al0.3Ga0.7As Peer-reviewed

    Jennifer Misuraca, Jelena Trbovic, Jun Lu, Jianhua Zhao, Yuzo Ohno, Hideo Ohno, Peng Xiong, Stephan von Molnar

    PHYSICAL REVIEW B　82　(12)　125202-1-125202-6　2010/09

    DOI： 10.1103/PhysRevB.82.125202 　

    ISSN： 1098-0121

  254. Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires Peer-reviewed

    M. Kohda, J. Ogawa, J. Shiogai, F. Matsukura, Y. Ohno, H. Ohno, J. Nitta

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　42　(10)　2685-2689　2010/09

    DOI： 10.1016/j.physe.2009.12.019 　

    ISSN： 1386-9477

    eISSN： 1873-1759

  255. Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film Peer-reviewed

    Y. Nishitani, M. Endo, F. Matsukura, H. Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　42　(10)　2681-2684　2010/09

    DOI： 10.1016/j.physe.2009.12.054 　

    ISSN： 1386-9477

    eISSN： 1873-1759

  256. Domain wall creep in (Ga,Mn)As Peer-reviewed

    A. Kanda, A. Suzuki, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　97　(3)　032504-(1)-032504-(3)　2010/07

    DOI： 10.1063/1.3467048 　

    ISSN： 0003-6951

  257. Magnetization dynamics of a CrO2 grain studied by micro-Hall magnetometry Peer-reviewed

    P. Das, F. Porrati, S. Wirth, A. Bajpai, M. Huth, Y. Ohno, H. Ohno, J. Mueller

    APPLIED PHYSICS LETTERS　97　(4)　042507-(1)-042507-(3)　2010/07

    DOI： 10.1063/1.3467870 　

    ISSN： 0003-6951

  258. Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy Peer-reviewed

    D. Chiba, Y. Nakatani, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　96　(19)　192506-(1)-192506-(3)　2010/05

    DOI： 10.1063/1.3428959 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  259. Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions Peer-reviewed

    H. D. Gan, S. Ikeda, W. Shiga, J. Hayakawa, K. Miura, H. Yamamoto, H. Hasegawa, F. Matsukura, T. Ohkubo, K. Hono, H. Ohno

    APPLIED PHYSICS LETTERS　96　(19)　192507-(1)-192507-(3)　2010/05

    DOI： 10.1063/1.3429594 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  260. Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures Peer-reviewed

    M. Endo, S. Kanai, S. Ikeda, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　96　(21)　212503-(1)-212503-(3)　2010/05

    DOI： 10.1063/1.3429592 　

    ISSN： 0003-6951

  261. Spatially homogeneous ferromagnetism of (Ga, Mn)As Peer-reviewed

    S. R. Dunsiger, J. P. Carlo, T. Goko, G. Nieuwenhuys, T. Prokscha, A. Suter, E. Morenzoni, D. Chiba, Y. Nishitani, T. Tanikawa, F. Matsukura, H. Ohno, J. Ohe, S. Maekawa, Y. J. Uemura

    NATURE MATERIALS　9　(4)　299-303　2010/04

    DOI： 10.1038/NMAT2715 　

    ISSN： 1476-1122

  262. A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and &apos;1&apos;/&apos;0&apos; Dual-Array Equalized Reference Scheme Peer-reviewed

    Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi, Shoji Ikeda, Haruhiro Hasegawa, Hideyuki Matsuoka, Hideo Ohno

    IEEE JOURNAL OF SOLID-STATE CIRCUITS　45　(4)　869-879　2010/04

    DOI： 10.1109/JSSC.2010.2040120 　

    ISSN： 0018-9200

  263. Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot Peer-reviewed

    S. Marcet, K. Ohtani, H. Ohno

    Applied Physics Letters　99　101117-(1)-101117-(3)　2010/03/12

    DOI： 10.1063/1.3360212 　

  264. Anomalous Hall Effect in Field-Effect Structures of (Ga,Mn)As Peer-reviewed

    D. Chiba, A. Werpachowska, M. Endo, Y. Nishitani, F. Matsukura, T. Dietl, H. Ohno

    PHYSICAL REVIEW LETTERS　104　(10)　106601-(1)-106601-(4)　2010/03

    DOI： 10.1103/PhysRevLett.104.106601 　

    ISSN： 0031-9007

  265. A nondestructive analysis of the B diffusion in Ta-CoFeB-MgO-CoFeB-Ta magnetic tunnel junctions by hard x-ray photoemission Peer-reviewed

    Xeniya Kozina, Siham Ouardi, Benjamin Balke, Gregory Stryganyuk, Gerhard H. Fecher, Claudia Felser, Shoji Ikeda, Hideo Ohno, Eiji Ikenaga

    APPLIED PHYSICS LETTERS　96　(7)　072105-1-072105-3　2010/02

    DOI： 10.1063/1.3309702 　

    ISSN： 0003-6951

  266. Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well Peer-reviewed

    M. Ono, H. Kobayashi, S. Matsuzaka, Y. Ohno, H. Ohno

    APPLIED PHYSICS LETTERS　96　(7)　071907-1-071907-3　2010/02

    DOI： 10.1063/1.3309687 　

    ISSN： 0003-6951

  267. Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As Peer-reviewed

    Maciej Sawicki, Daichi Chiba, Anna Korbecka, Yu Nishitani, Jacek A. Majewski, Fumihiro Matsukura, Tomasz Dietl, Hideo Ohno

    NATURE PHYSICS　6　(1)　22-25　2010/01

    DOI： 10.1038/NPHYS1455 　

    ISSN： 1745-2473

  268. Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration Peer-reviewed

    S. Matsuzaka, Y. Ohno, H. Ohno

    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM　23　(1)　37-39　2010/01

    DOI： 10.1007/s10948-009-0558-6 　

    ISSN： 1557-1939

  269. Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well Peer-reviewed

    M. Ono, S. Matsuzaka, Y. Ohno, H. Ohno

    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM　23　(1)　131-133　2010/01

    DOI： 10.1007/s10948-009-0568-4 　

    ISSN： 1557-1939

  270. Electric double layer transistor with a (Ga,Mn)As channel Peer-reviewed

    M. Endo, D. Chiba, H. Shimotani, F. Matsukura, Y. Iwasa, H. Ohno

    APPLIED PHYSICS LETTERS　96　(2)　022515-1-022515-3　2010/01

    DOI： 10.1063/1.3277146 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  271. Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs Peer-reviewed

    Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Dietl, H. Ohno

    PHYSICAL REVIEW B　81　(4)　045208-1-045208-8　2010/01

    DOI： 10.1103/PhysRevB.81.045208 　

    ISSN： 1098-0121

  272. Spin-transfer Switching in Magnetic Tunnel Junctions with Synthetic Ferri-magnetic Free Layer Peer-reviewed

    M. Nishimura, M. Oogane, H. Naganuma, N. Inami, S. Ikeda, H. Ohno, Y. Ando

    INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009)　200　052018-1-052018-4　2010

    DOI： 10.1088/1742-6596/200/5/052018 　

    ISSN： 1742-6588

  273. CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio Peer-reviewed

    Kotaro Mizunuma, Shoji Ikeda, Hiroyuki Yamamoto, Hua Dong Gan, Katsuya Miura, Haruhiro Hasegawa, Jun Hayakawa, Kenchi Ito, Fumihiro Matsukura, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　04DM04-(1)-04DM04-(4)　2010

    DOI： 10.1143/JJAP.49.04DM04 　

    ISSN： 0021-4922

  274. Fine-Grained Power-Gating Scheme of a Metal-Oxide-Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory Peer-reviewed

    Shoun Matsunaga, Masanori Natsui, Kimiyuki Hiyama, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　04DM-05-(1)-04DM-05-(5)　2010

    DOI： 10.1143/JJAP.49.04DM05 　

    ISSN： 0021-4922

  275. The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal-Oxide-Semiconductor Circuits Peer-reviewed

    Tetsuo Endoh, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Masashi Kamiyanagi, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　04DM06-(1)-04DM06-(5)　2010

    DOI： 10.1143/JJAP.49.04DM06 　

    ISSN： 0021-4922

  276. Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy Peer-reviewed

    S. Matsuzaka, Y. Ohno, H. Ohno

    PHYSICAL REVIEW B　80　(24)　241305-1-241305-4　2009/12

    DOI： 10.1103/PhysRevB.80.241305 　

    ISSN： 1098-0121

  277. MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers Peer-reviewed

    K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　95　(23)　232516-1-232516-3　2009/12

    DOI： 10.1063/1.3265740 　

    ISSN： 0003-6951

  278. Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier Peer-reviewed

    Ji-Ho Park, Shoji Ikeda, Hiroyuki Yamamoto, Huadong Gan, Kotaro Mizunuma, Katsuya Miura, Haruhiro Hasegawa, Jun Hayakawa, Kenchi Ito, Fumihiro Matsukura, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　45　(10)　3476-3479　2009/10

    DOI： 10.1109/TMAG.2009.2023237 　

    ISSN： 0018-9464

  279. Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures Peer-reviewed

    S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, S. Ikeda, H. Ohno

    JOURNAL OF APPLIED PHYSICS　106　(2)　023920-1-023920-6　2009/07

    DOI： 10.1063/1.3182817 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  280. Direct measurement of current-induced fieldlike torque in magnetic tunnel junctions Peer-reviewed

    T. Devolder, Joo-Von Kim, C. Chappert, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, H. Ohno

    JOURNAL OF APPLIED PHYSICS　105　(11)　113924-1-113924-5　2009/06

    DOI： 10.1063/1.3143033 　

    ISSN： 0021-8979

  281. ac susceptibility of (Ga,Mn)As probed by the anomalous Hall effect Invited Peer-reviewed

    Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　105　(7)　07C516-1-07C516-3　2009/04

    DOI： 10.1063/1.3072078 　

    ISSN： 0021-8979

  282. 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film Invited Peer-reviewed

    M. Kodzuka, T. Ohkubo, K. Hono, F. Matsukura, H. Ohno

    ULTRAMICROSCOPY　109　(5)　644-648　2009/04

    DOI： 10.1016/j.ultramic.2008.11.011 　

    ISSN： 0304-3991

  283. Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells Invited Peer-reviewed

    K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, H. Ohno

    APPLIED PHYSICS LETTERS　94　(16)　162104-1-162104-3　2009/04

    DOI： 10.1063/1.3118584 　

    ISSN： 0003-6951

  284. Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy Invited Peer-reviewed

    K. Ohtani, M. Belmoubarik, H. Ohno

    JOURNAL OF CRYSTAL GROWTH　311　(7)　2176-2178　2009/03

    DOI： 10.1016/j.jcrysgro.2008.09.134 　

    ISSN： 0022-0248

  285. Thermally activated longitudinal optical phonon scattering of a 3.8THz GaAs quantum cascade laser Peer-reviewed

    Tsung-Tse Lin, Keita Ohtani, Hideo Ohno

    Applied Physics Express　2　(2)　022102-(1)-022102-(3)　2009/02

    DOI： 10.1143/APEX.2.022102 　

    ISSN： 1882-0778 1882-0786

  286. Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices Peer-reviewed

    Shoun Matsunaga, Kimiyuki Hiyama, Atsushi Matsumoto, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    APPLIED PHYSICS EXPRESS　2　(2)　023004-(1)-023004-(3)　2009/02

    DOI： 10.1143/APEX.2.023004 　

    ISSN： 1882-0778

  287. MTJ-Based Nonvolatile Logic-in-Memory Circuit, Future Prospects and Issues Peer-reviewed

    Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    DATE: 2009 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, VOLS 1-3　433-+　2009

    ISSN： 1530-1591

  288. A novel SPRAM (spin-transfer torque RAM)-based reconfigurable logic block for 2D-stacked reconfigurable spin processor Invited Peer-reviewed

    M. Sekikawa, K. Kiyoyama, H. Hasegawa, K. Miura, T. Fukushima, S. Ikeda, T. Tanaka, H. Ohno, M. Koyanagi

    Digests of technical papers of 2008 IEEE International Electron Devices Meeting (IEDM 2008）　935-937　2008/12

    DOI： 10.1109/IEDM.2008.4796645 　

  289. A Novel SPRAM (SPin-transfer torque RAM)-based Reconfigurable Logic Block for 3D-Stacked reconfigurable Spin Processor Invited Peer-reviewed

    M. Sekikawa, K. Kiyoyama, H. Hasegawa, K. Miura, T. Fukushima, S. Ikeda, T. Tanaka, H. Ohno, M. Koyanagi

    IEEE Electron Devices Meeting, Technical Papers　935-937　2008/12

    DOI： 10.1109/IEDM.2008.4796645 　

  290. Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric Peer-reviewed

    A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, M. Kawasaki

    APPLIED PHYSICS LETTERS　93　(24)　241905-(1)-241905-(3)　2008/12

    DOI： 10.1063/1.3035844 　

    ISSN： 0003-6951

  291. Multipulse Operation and Optical Detection of Nuclear Spin Coherence in a GaAs/AlGaAs Quantum Well Peer-reviewed

    Y. Kondo, M. Ono, S. Matsuzaka, K. Morita, H. Sanada, Y. Ohno, H. Ohno

    PHYSICAL REVIEW LETTERS　101　(20)　207601-(1)-207601-(4)　2008/11

    DOI： 10.1103/PhysRevLett.101.207601 　

    ISSN： 0031-9007

  292. Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions Peer-reviewed

    Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Haruhiro Hasegawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

    APPLIED PHYSICS EXPRESS　1　(9)　091301-(1)-091301-(3)　2008/09

    DOI： 10.1143/APEX.1.091301 　

    ISSN： 1882-0778

  293. Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors Peer-reviewed

    Yong Pu, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno, Jing Shi

    PHYSICAL REVIEW LETTERS　101　(11)　117208-(1)-117208-(4)　2008/09

    DOI： 10.1103/PhysRevLett.101.117208 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  294. Magnetization vector manipulation by electric fields Peer-reviewed

    D. Chiba, M. Sawicki, Y. Nishitani, Y. Nakatani, F. Matsukura, H. Ohno

    NATURE　455　(7212)　515-518　2008/09

    DOI： 10.1038/nature07318 　

    ISSN： 0028-0836

    eISSN： 1476-4687

  295. Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature Peer-reviewed

    S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　93　(8)　082508-(1)-082508-(3)　2008/08

    DOI： 10.1063/1.2976435 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  296. Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB-based synthetic ferrimagnetic free layers Peer-reviewed

    Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Michihiko Yarnanouchi, Young Min Lee, Ryutaro Sasaki, Masahiko Ichimura, Kenchi Ito, Takayuki Kawahara, Riichiro Takemura, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno

    IEEE TRANSACTIONS ON MAGNETICS　44　(7)　1962-1967　2008/07

    DOI： 10.1109/TMAG.2008.924545 　

    ISSN： 0018-9464

  297. Intersubband transitions in ZnO multiple quantum wells Peer-reviewed

    M. Belmoubarik, K. Ohtani, H. Ohno

    APPLIED PHYSICS LETTERS　92　(19)　191906(1)-191906(3)　2008/05

    DOI： 10.1063/1.2926673 　

    ISSN： 0003-6951

  298. An extensive comparison of anisotropies in MBE grown (Ga, Mn)As material Peer-reviewed

    C. Gould, S. Mark, K. Pappert, R. G. Dengel, J. Wenisch, R. P. Campion, A. W. Rushforth, D. Chiba, Z. Li, X. Liu, W. Van Roy, H. Ohno, J. K. Furdyna, B. Gallagher, K. Brunner, G. Schmidt, L. W. Molenkamp

    NEW JOURNAL OF PHYSICS　10　055007-(1)-055007-(10)　2008/05

    DOI： 10.1088/1367-2630/10/5/055007 　

    ISSN： 1367-2630

  299. Properties of Ga(1-x)Mn(x)As with high x (&gt; 0.1) Peer-reviewed

    D. Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　103　(7)　07D136-1-07D136-3　2008/04

    DOI： 10.1063/1.2837469 　

    ISSN： 0021-8979

  300. Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200 Peer-reviewed

    Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　103　(7)　07D139-1-07D139-3　2008/04

    DOI： 10.1063/1.2838159 　

    ISSN： 0021-8979

  301. Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited) Invited Peer-reviewed

    T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, J. A. Katine, M. J. Carey, P. Crozat, J. V. Kim, C. Chappert, H. Ohno

    JOURNAL OF APPLIED PHYSICS　103　(7)　07A723(1)-07A723(6)　2008/04

    DOI： 10.1063/1.2839341 　

    ISSN： 0021-8979

  302. Spin-transfer physics and the model of ferromagnetism in (Ga, Mn)As Peer-reviewed

    Hideo Ohno, Tomasz Dietl

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　320　(7)　1293-1299　2008/04

    DOI： 10.1016/j.jmmm.2007.12.016 　

    ISSN： 0304-8853

  303. Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with Al2Oe gate insulator Peer-reviewed

    T. Kita, D. Chiba, Y. Ohno, H. Ohno

    Physica E　40　1930-1932　2008/04

    DOI： 10.1016/j.physe.2007.08.140 　

  304. Effect of vertical electric fields on exciton fine structure of GaAs natural quantum dots Peer-reviewed

    S. Marcet, T. Kita, K. Ohtani, H. Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　40　(6)　2069-2071　2008/04

    DOI： 10.1016/j.physe.2007.09.106 　

    ISSN： 1386-9477

  305. 0.7 anomaly and magnetotransport of disordered quantum wires Peer-reviewed

    M. Czapkiewicz, P. Zagrajek, J. Wrobel, G. Grabecki, K. Fronc, T. Dietl, Y. Ohno, S. Matsuzaka, H. Ohno

    EPL　82　(2)　27003-(1)-27003-(6)　2008/04

    DOI： 10.1209/0295-5075/82/27003 　

    ISSN： 0295-5075

  306. Electrical control of spin coherence in ZnO Peer-reviewed

    S. Ghosh, D. W. Steuerman, B. Maertz, K. Ohtani, Huaizhe Xu, H. Ohno, D. D. Awschalom

    APPLIED PHYSICS LETTERS　92　(16)　162109(1)-162109(3)　2008/04

    DOI： 10.1063/1.2913049 　

    ISSN： 0003-6951

  307. Spintronics - A renaissance in magnetism Peer-reviewed

    H. Ohno

    Journal of the Physical Society of Japan　77　2008/03

  308. Fine structure in magnetospectrum of vertical quantum dot Peer-reviewed

    Oleksiy B. Agafonov, Tomohiro Kita, Hideo Ohno, Rolf J. Haug

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　40　(5)　1630-1632　2008/03

    DOI： 10.1016/j.physe.2007.10.006 　

    ISSN： 1386-9477

  309. Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: Stochastic versus deterministic aspects Peer-reviewed

    T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, P. Crozat, N. Zerounian, Joo-Von Kim, C. Chappert, H. Ohno

    PHYSICAL REVIEW LETTERS　100　(5)　057206-1-057206-3　2008/02

    DOI： 10.1103/PhysRevLett.100.057206 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  310. 2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read Peer-reviewed

    Takayuki Kawahara, Riichiro Takemura, Katsuya Miura, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Yasushi Goto, Kenchi Ito, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno

    IEEE JOURNAL OF SOLID-STATE CIRCUITS　43　(1)　109-120　2008/01

    DOI： 10.1109/JSSC.2007.909751 　

    ISSN： 0018-9200

  311. Simultaneous lasing of interband and intersubband transitions in InAs/AlSb quantum cascade laser structures Peer-reviewed

    K. Ohtani, H. Ohnishi, H. Ohno

    APPLIED PHYSICS LETTERS　92　(4)　041102-1-041102-3　2008/01

    DOI： 10.1063/1.2838296 　

    ISSN： 0003-6951

  312. A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate Peer-reviewed

    T. Kita, D. Chiba, Y. Ohno, H. Ohno

    APPLIED PHYSICS LETTERS　91　(23)　232101-1-232101-3　2007/12

    DOI： 10.1063/1.2818712 　

    ISSN： 0003-6951

  313. Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga, Mn)As Peer-reviewed

    M. Yamanouchi, J. Ieda, F. Matsukura, S. E. Barnes, S. Maekawa, H. Ohno

    SCIENCE　317　(5845)　1726-1729　2007/09

    DOI： 10.1126/science.1145516 　

    ISSN： 0036-8075

  314. Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover Peer-reviewed

    T. Jungwirth, Jairo Sinova, A. H. MacDonald, B. L. Gallagher, V. Novak, K. W. Edmonds, A. W. Rushforth, R. P. Campion, C. T. Foxon, L. Eaves, E. Olejnik, J. Masek, S-R. Eric Yang, J. Wunderlich, C. Gould, L. W. Molenkamp, T. Dietl, H. Ohno

    PHYSICAL REVIEW B　76　(12)　125206-1-125206-9　2007/09

    DOI： 10.1103/PhysRevB.76.125206 　

    ISSN： 1098-0121

  315. Channel thickness dependence of the magnetic properties in (Ga,Mn)As FET structures Peer-reviewed

    M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, H. Ohno

    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM　20　(6)　409-411　2007/08

    DOI： 10.1007/s10948-007-0242-7 　

    ISSN： 1557-1939

  316. Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions Peer-reviewed

    M. Fukuda, M. Yamanouchi, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　91　(5)　052503-1-052503-3　2007/07

    DOI： 10.1063/1.2767230 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  317. Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 mu m Peer-reviewed

    K. Ohtani, Y. Moriyasu, H. Ohnishi, H. Ohno

    APPLIED PHYSICS LETTERS　90　(26)　261112(1)-261112(3)　2007/06

    DOI： 10.1063/1.2752771 　

    ISSN： 0003-6951

  318. Ferromagnetic semiconductor heterostructures for spintronics Peer-reviewed

    Tomasz Dietl, Hideo Ohno, Fumihiro Matsukura

    IEEE TRANSACTIONS ON ELECTRON DEVICES　54　(5)　945-954　2007/05

    DOI： 10.1109/TED.2007.894622 　

    ISSN： 0018-9383

    eISSN： 1557-9646

  319. Magnetic tunnel junctions for spintronic memories and beyond Peer-reviewed

    Shoji Ikeda, Jun Hayakawa, Young Min Lee, Futnihifo Matsukura, Yuzo Ohno, Takahiro Hanyu, Hideo Ohno

    IEEE TRANSACTIONS ON ELECTRON DEVICES　54　(5)　991-1002　2007/05

    DOI： 10.1109/TED.2007.894617 　

    ISSN： 0018-9383

    eISSN： 1557-9646

  320. Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier Peer-reviewed

    Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　90　(21)　212507-1-212507-3　2007/05

    DOI： 10.1063/1.2742576 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  321. Effect of substrate temperature on the properties of heavily Mn-doped GaAs Peer-reviewed

    H-J Lee, D. Chiba, F. Matsukura, H. Ohno

    JOURNAL OF CRYSTAL GROWTH　301　264-267　2007/04

    DOI： 10.1016/j.jcrysgro.2006.11.155 　

    ISSN： 0022-0248

  322. Room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 μm Peer-reviewed

    K. Ohtani, K. Fujita, H. Ohno

    Electronics Letters　43　520-521　2007/04

    DOI： 10.1049/el:20070251 　

  323. Magnetization reversal in a ferromagnetic circular dot under current induced resonant excitation Peer-reviewed

    S. Kasai, Y. Nakatani, K. Kobayashi, H. Kohno, T. Ono

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　310　(2)　2351-2352　2007/03

    DOI： 10.1006/j.jmmm.2006.11.102 　

    ISSN： 0304-8853

  324. Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions Peer-reviewed

    Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Hideo Ohno

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　310　(2)　1937-1939　2007/03

    DOI： 10.1016/j.jmmm.2006.10.770 　

    ISSN： 0304-8853

    eISSN： 1873-4766

  325. Domain wall resistance in perpendicularly magnetized (Ga,Mn) As Peer-reviewed

    D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, H. Ohno

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　310　(2)　2078-2083　2007/03

    DOI： 10.1016/j.jmmm.2006.10.1119 　

    ISSN： 0304-8853

  326. Quantum Hall effect in polar oxide heterostructures Peer-reviewed

    A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, M. Kawasaki

    SCIENCE　315　(5817)　1388-1391　2007/03

    DOI： 10.1126/science.1137430 　

    ISSN： 0036-8075

  327. Properties of Ga1-xMnxAs with high Mn composition (x &gt; 0.1) Peer-reviewed

    D. Chiba, Y. Nishitani, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　90　(12)　122503-1-122503-3　2007/03

    DOI： 10.1063/1.2715095 　

    ISSN： 0003-6951

  328. 2Mb spin-transfer torque RAM(SRAM) with bit-by-bit bi-directional current write and parallelizing-direction current read Peer-reviewed

    T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, H. Ohno

    in digest technical paper of ISSCC2007　480-481　2007/02

    DOI： 10.1109/ISSCC.2007.373503 　

  329. (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator Peer-reviewed

    T. Kita, D. Chiba, Y. Ohno, H. Ohno

    APPLIED PHYSICS LETTERS　90　(6)　062102-1-062102-3　2007/02

    DOI： 10.1063/1.2437060 　

    ISSN： 0003-6951

  330. Spin injection with three terminal device based on (Ga, Mn)As/n+-GaAs tunnel junction Peer-reviewed

    T. Kita, M. Kohda, Y. Ohno, F. Matsukura, H. Ohno

    Phys. Stat. Sol. (c)　3　(12)　4164-4167　2007/01/23

    DOI： 10.1002/pssc.200672865 　

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  331. 2Mb SPRAM design: Bi-directional current write and parallelizing-direction current read schemes based on spin-transfer torque switching Peer-reviewed

    R. Takemura, T. Kawahara, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, H. Ohno

    2007 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS　238-+　2007

  332. Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions Peer-reviewed

    J. Hayakawaa, S. Ikeda, Y. M. Lee, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　89　(23)　232510-1-232510-3　2006/12

    DOI： 10.1063/1.2402904 　

    ISSN： 0003-6951

  333. Engineering magnetism in semiconductors Peer-reviewed

    Tomasz Dietl, Hideo Ohno

    Materials today　9　2007/1/18-18-9　2006/11

    DOI： 10.1016/S1369-7021(06)71691-1 　

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  334. Current-induced magnetization switching in MgO barrier based tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer Peer-reviewed

    J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, H. Ohno

    Japanese Journal of Applied Physics　45　(40)　L1057-L1060　2006/10/06

    DOI： 10.1143/JJAP.45.L1057 　

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  335. Electric-field control of ferromagnetism in (Ga,Mn)As Peer-reviewed

    D. Chiba, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　89　(16)　162505-1-162505-3　2006/10

    DOI： 10.1063/1.2362971 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  336. Photoemission spectroscopy and X-ray absorption spectroscopy studies of the superconducting pyrochlore oxide Cd2Re2O7 Peer-reviewed

    A. Irizawa, A. Higashiya, S. Kasai, T. Sasabayashi, A. Shigemoto, A. Sekiyama, S. Imada, S. Suga, H. Sakai, H. Ohno, M. Kato, K. Yoshimura, H. Harima

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　75　(9)　094701-1-4　2006/09

    DOI： 10.1143/JPSJ.75.094701 　

    ISSN： 0031-9015

  337. Single-electron switching in AlxGa1-xAs/GaAs Hall devices Peer-reviewed

    Jens Muller, Yongqing Li, Stephan von Molnar, Yuzo Ohno, Hideo Ohno

    PHYSICAL REVIEW B　74　(12)　125310-1-125310-7　2006/09

    DOI： 10.1103/PhysRevB.74.125310 　

    ISSN： 1098-0121

  338. Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy Peer-reviewed

    Huaizhe Xu, K. Ohtani, M. Yamao, H. Ohno

    APPLIED PHYSICS LETTERS　89　(7)　071918-1-071918-3　2006/08

    DOI： 10.1063/1.2337541 　

    ISSN： 0003-6951

  339. Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n(+)-GaAs Esaki diode Peer-reviewed

    M. Kohda, T. Kita, Y. Ohno, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　89　(1)　012103-1-012103-3　2006/07

    DOI： 10.1063/1.2219141 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  340. Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer Peer-reviewed

    Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno

    APPLIED PHYSICS LETTERS　89　(4)　042506-1-042506-3　2006/07

    DOI： 10.1063/1.2234720 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  341. Electrical magnetization reversal in ferromagnetic III-V semiconductors Peer-reviewed

    D. Chiba, F. Matsukura, H. Ohno

    Journal of Physics D: Applied Physics　39　R215-R225　2006/06/16

    DOI： 10.1088/0022-3727/39/13/R01 　

  342. Effect of n(+)-GaAs thickness and doping density on spin injection of GaMnAs/n(+)-GaAs Esaki tunnel junction Peer-reviewed

    M. Kohda, Y. Ohno, F. Matsukura, H. Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　32　(1-2)　438-441　2006/05

    DOI： 10.1016/j.physe.2005.12.085 　

    ISSN： 1386-9477

    eISSN： 1873-1759

  343. Decomposition of 1/f noise in AlxGa1-xAs/GaAs Hall devices Peer-reviewed

    J Muller, S von Molnar, Y Ohno, H Ohno

    PHYSICAL REVIEW LETTERS　96　(18)　186601-1-186601-4　2006/05

    DOI： 10.1103/PhysRevLett.96.186601 　

    ISSN： 0031-9007

  344. Current-assisted domain wall motion in ferromagnetic semiconductors Peer-reviewed

    Michihiko Yamanouchi, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　45　(5A)　3854-3859　2006/05

    DOI： 10.1143/JJAP.45.3854 　

    ISSN： 0021-4922

  345. Current-driven resonant excitation of magnetic vortex Peer-reviewed

    Shinya Kasai, Yoshinobu Nakatani, Kensuke Kobayashi, Hiroshi Kohno, Teruo Ono

    PHYSICAL REVIEW LETTERS　97　(10)　1-107204　2006/04/05

    DOI： 10.1103/PhysRevLett.97.107204 　

    ISSN： 0031-9007

  346. Ferromagnetic semiconductors for spintronics Peer-reviewed

    H Ohno

    PHYSICA B-CONDENSED MATTER　376　19-21　2006/04

    DOI： 10.1016/j.physb.2005.12.007 　

    ISSN： 0921-4526

  347. Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction Peer-reviewed

    D Chiba, T Kita, F Matsukura, H Ohno

    JOURNAL OF APPLIED PHYSICS　99　(8)　08G514-1-08G514-3　2006/04

    DOI： 10.1063/1.2170063 　

    ISSN： 0021-8979

  348. Fabrication and evaluation of magnetic tunnel junction with MgO tunneling barrier Peer-reviewed

    Takeshi Sakaguchi Hoon Choi, Ahn Sung-Jin, Takeaki Sugimura, Mungi Park, Milcihiko Oogane, Hyuckjae Oh, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Takafumi Fukushima, Terunobu Miyazaki, Hideo Ohno, Mitsumasa Koyanagi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　45　(4B)　3228-3232　2006/04

    DOI： 10.1143/JJAP.45.3228 　

    ISSN： 0021-4922

  349. Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers Peer-reviewed

    S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, H. Ohno

    JOURNAL OF APPLIED PHYSICS　99　(8)　08A901-1-08A901-3　2006/04

    DOI： 10.1063/1.2176588 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  350. Domain-wall resistance in ferromagnetic (Ga, Mn)As Peer-reviewed

    D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, H. Ohno

    Physical Review Letters　96　096602-1-096602-4　2006/03/10

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  351. Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As Peer-reviewed

    M Yamanouchi, D Chiba, F Matsukura, T Dietl, H Ohno

    PHYSICAL REVIEW LETTERS　96　(9)　096601-1-096601-4　2006/03

    DOI： 10.1103/PhysRevLett.96.096601 　

    ISSN： 0031-9007

  352. Control of ZnO (0001)/Al2O3(1120) surface morphologies using plasma-assisted molecular beam epitaxy Peer-reviewed

    HZ Xu, K Ohtani, M Yarnao, H Ohno

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS　243　(4)　773-777　2006/03

    DOI： 10.1002/pssb.200564657 　

    ISSN： 0370-1972

  353. Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells Peer-reviewed

    H Sanada, Y Kondo, S Matsuzaka, K Morita, CY Hu, Y Ohno, H Ohno

    PHYSICAL REVIEW LETTERS　96　(6)　067602-1-067602-4　2006/02

    DOI： 10.1103/PhysRevLett.96.067602 　

    ISSN： 0031-9007

  354. High-throughput synthesis and characterization of Mg1-xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors Peer-reviewed

    J Nishii, A Ohtomo, M Ikeda, Y Yamada, K Ohtani, H Ohno, M Kawasaki

    APPLIED SURFACE SCIENCE　252　(7)　2507-2511　2006/01

    DOI： 10.1016/j.apsusc.2005.06.040 　

    ISSN： 0169-4332

    eISSN： 1873-5584

  355. Magnetic anisotropy in (Ga,Mn)As probed by magnetotransport measurements Peer-reviewed

    T. Yamada, D. Chiba, F. Matsukura, S. Yakata, H. Ohno

    Physica Status Solidi (C) Current Topics in Solid State Physics　3　(12)　4086-4089　2006

    DOI： 10.1002/pssc.200672877 　

    ISSN： 1862-6351

  356. Physics and materials of spintronics in semiconductors Peer-reviewed

    Hideo Ohno

    Physica Status Solidi (C) Current Topics in Solid State Physics　3　(12)　4057-4061　2006

    DOI： 10.1002/pssc.200672893 　

    ISSN： 1862-6351

  357. Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers Peer-reviewed

    K Ohtani, K Fujita, H Ohno

    APPLIED PHYSICS LETTERS　87　(21)　211113-1-211113-3　2005/11

    DOI： 10.1063/1.2136428 　

    ISSN： 0003-6951

  358. Strong anisotropic spin dynamics in narrow n-InGaAs/AlGaAs (110) quantum wells Peer-reviewed

    K Morita, H Sanada, S Matsuzaka, CY Hu, Y Ohno, H Ohno

    APPLIED PHYSICS LETTERS　87　(17)　171905-1-171905-2　2005/10

    DOI： 10.1063/1.2112193 　

    ISSN： 0003-6951

  359. Detection of single magnetic bead for biological applications using an InAs quantum-well micro-Hall sensor Peer-reviewed

    G. Mihajlovic, P. Xiong, S. von Molnar, K. Ohtani, H. Ohno, M. Field, G. J. Sullivan

    Applied Physics Letters　87　112502-1-112502-2　2005/09/07

    DOI： 10.1063/1.2043238 　

  360. Taking the Hall effect for a spin Peer-reviewed

    J Inoue, H Ohno

    SCIENCE　309　(5743)　2004-2005　2005/09

    DOI： 10.1126/science.1113956 　

    ISSN： 0036-8075

    eISSN： 1095-9203

  361. Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique Peer-reviewed

    CY Hu, K Morita, H Sanada, S Matsuzaka, Y Ohno, H Ohno

    PHYSICAL REVIEW B　72　(12)　121203-1-121203-4　2005/09

    DOI： 10.1103/PhysRevB.72.121203 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  362. Effect of GaAs intermediary layer thickness on the properties of (Ga,Mn)As tri-layer structures Peer-reviewed

    Y. Sato, D. Chiba, F. Matsukura, H. Ohno

    Journal of Superconductivity; Incorporating Novel Magnetism　1-3　2005/07/08

    DOI： 10.1007/sl0948-005-0008-z 　

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  363. Current-driven magnetization reversal in exchange-biased spin-valve nanopillars Peer-reviewed

    J Hayakawa, H Takahashi, K Ito, M Fujimori, S Heike, T Hashizume, M Ichimura, S Ikeda, H Ohno

    JOURNAL OF APPLIED PHYSICS　97　(11)　114321-1-114321-3　2005/06

    DOI： 10.1063/1.1927707 　

    ISSN： 0021-8979

  364. Magnetization reversal in elongated Fe nanoparticles - art. no. 21445 Peer-reviewed

    YQ Li, P Xiong, S von Molnar, Y Ohno, H Ohno

    PHYSICAL REVIEW B　71　(21)　214425-1-214425-6　2005/06

    DOI： 10.1103/PhysRevB.71.214425 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  365. InAs quantum cascade lasers based on coupled quantum well structures Peer-reviewed

    K Ohtani, K Fujita, H Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　44　(4B)　2572-2574　2005/04

    DOI： 10.1143/JJAP.44.2572 　

    ISSN： 0021-4922

  366. Low-frequency noise in submicron GaAs/AlxGa1-xAs Hall devices Peer-reviewed

    J Muller, YQ Li, S Molnar, Y Ohno, H Ohno

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　290　1161-1164　2005/04

    DOI： 10.1016/j.jmmm.2004.11.502 　

    ISSN： 0304-8853

  367. Gate control of dynamic nuclear polarization in GaAs quantum wells Peer-reviewed

    H Sanada, S Matsuzaka, K Morita, CY Hu, Y Ohno, H Ohno

    PHYSICAL REVIEW LETTERS　94　(9)　097601-1-097601-4　2005/03

    DOI： 10.1103/PhysRevLett.94.097601 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  368. Fabrication of ternary phase composition-spread thin film libraries and their high-throughput characterization: Ti1-x-yZrxHfyO2 for bandgap engineering Peer-reviewed

    Y Yamada, T Fukumura, M Ikeda, M Ohtani, H Toyosaki, A Ohtomo, F Matsukura, H Ohno, M Kawasaki

    JOURNAL OF SUPERCONDUCTIVITY　18　(1)　109-113　2005/02

    DOI： 10.1007/s10948-005-2160-x 　

    ISSN： 0896-1107

  369. Fabrication of ternary phase composition-spread thin film libraries and their high-throughput characterization: Ti1-x-yZrxHf yO2 for bandgap engineering Peer-reviewed

    Y. Yamada, T. Fukumura, M. Ikeda, M. Ohtani, H. Toyosaki, A. Ohtomo, F. Matsukura, H. Ohno, M. Kawasaki

    Journal of Superconductivity and Novel Magnetism　18　(1)　109-113　2005

    DOI： 10.1007/s10948-005-2160-x 　

    ISSN： 1557-1939 1557-1947

  370. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO Peer-reviewed

    A Tsukazaki, A Ohtomo, T Onuma, M Ohtani, T Makino, M Sumiya, K Ohtani, SF Chichibu, S Fuke, Y Segawa, H Ohno, H Koinuma, M Kawasaki

    NATURE MATERIALS　4　(1)　42-46　2005/01

    DOI： 10.1038/nmat1284 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  371. Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature Peer-reviewed

    J Hayakawa, S Ikeda, F Matsukura, H Takahashi, H Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(16-19)　L587-L589　2005

    DOI： 10.1143/JJAP.44.L587 　

    ISSN： 0021-4922

  372. Blue light-emitting diode based on ZnO Peer-reviewed

    A Tsukazaki, M Kubota, A Ohtomo, T Onuma, K Ohtani, H Ohno, SF Chichibu, M Kawasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(20-23)　L643-L645　2005

    DOI： 10.1143/JJAP.44.L643 　

    ISSN： 0021-4922

  373. High-mobility field-effect transistors based on single-crystalline ZnO channels Peer-reviewed

    J Nishii, A Ohtomo, K Ohtani, H Ohno, M Kawasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(37-41)　L1193-L1195　2005

    DOI： 10.1143/JJAP.44.L1193 　

    ISSN： 0021-4922

  374. Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions Peer-reviewed

    J Hayakawa, S Ikeda, YM Lee, R Sasaki, T Meguro, F Matsukura, H Takahashi, H Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(37-41)　L1267-L1270　2005

    DOI： 10.1143/JJAP.44.L1267 　

    ISSN： 0021-4922

  375. Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering Peer-reviewed

    S Ikeda, J Hayakawa, YM Lee, R Sasaki, T Meguro, F Matsukura, H Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(46-49)　L1442-L1445　2005

    DOI： 10.1143/JJAP.44.L1442 　

    ISSN： 0021-4922

  376. Control of magnetization reversal in ferromagnetic semiconductors by electrical means Peer-reviewed

    D Chiba, M Yamanouchi, F Matsukura, H Ohno

    JOURNAL OF PHYSICS-CONDENSED MATTER　16　(48)　S5693-S5696　2004/12

    DOI： 10.1088/0953-8984/16/48/029 　

    ISSN： 0953-8984

  377. Modulation of noise in submicron GaAs/AlGaAs hall devices by gating Peer-reviewed

    YQ Li, C Ren, P Xiong, S von Molnar, Y Ohno, H Ohno

    PHYSICAL REVIEW LETTERS　93　(24)　246602-1-246602-4　2004/12

    DOI： 10.1103/PhysRevLett.93.246602 　

    ISSN： 0031-9007

    eISSN： 1079-7114

  378. Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction Peer-reviewed

    D. Chiba, Y. Sato, T. Kita, F. Matsukura, H. Ohno

    cond-mat　2004/11/19

    DOI： 10.1103/PhysRevLett.93.216602 　

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    &lt;RIEC&gt;&lt;DUMMY&gt;あ&lt;/DUMMY&gt;&lt;BIBID&gt;2003500756&lt;/BIBID&gt;&lt;/RIEC&gt;

  379. Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO(4) heterointerface Peer-reviewed

    TI Suzuki, A Ohtomo, A Tsukazaki, F Sato, J Nishii, H Ohno, M Kawasaki

    ADVANCED MATERIALS　16　(21)　1887-+　2004/11

    DOI： 10.1002/adma.200401018 　

    ISSN： 0935-9648

  380. Current-driven switching of exchange biased spin-valve giant magnetoresistive nanopillars using a conducting nanoprobe Peer-reviewed

    J Hayakawa, K Ito, M Fujimori, S Heike, T Hashizume, J Steen, J Brugger, H Ohno

    JOURNAL OF APPLIED PHYSICS　96　(6)　3440-3442　2004/09

    DOI： 10.1063/1.1769605 　

    ISSN： 0021-8979

  381. Molecular beam epitaxy and properties of Cr-doped GaSb Peer-reviewed

    E Abe, K Sato, F Matsukura, JH Zhao, Y Ohno, H Ohno

    JOURNAL OF SUPERCONDUCTIVITY　17　(3)　349-352　2004/06

    ISSN： 0896-1107

  382. A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14um Peer-reviewed

    K. Ohtani, K. Fujita, H. Ohno

    Jpn. J. Appl. Phys.　43　(7A)　L879-L881　2004/06

    DOI： 10.1143/JJAP.43.L879 　

  383. Ferromagnetic semiconductor heterostructures Peer-reviewed

    H Ohno

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　272　1-6　2004/05

    DOI： 10.1016/j.jmmm.2003.12.961 　

    ISSN： 0304-8853

    eISSN： 1873-4766

  384. Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact Peer-reviewed

    J. Hayakawa, M. Fujimori, S. Heike, M. Ishibashi, T. Hashizume, K. Ito, H. Ohno

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　272　E1443-E1445　2004/05

    DOI： 10.1016/j.jmmm.2003.12.730 　

    ISSN： 0304-8853

  385. Current-induced domain-wall switching in a ferromagnetic semiconductor structure Peer-reviewed

    M Yamanouchi, D Chiba, F Matsukura, H Ohno

    NATURE　428　(6982)　539-542　2004/04

    DOI： 10.1038/nature02441 　

    ISSN： 0028-0836

  386. Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain Peer-reviewed

    F Matsukura, M Sawicki, T Dietl, D Chiba, H Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　21　(2-4)　1032-1036　2004/03

    DOI： 10.1016/j.physe.2003.11.165 　

    ISSN： 1386-9477

    eISSN： 1873-1759

  387. Electron spindynamics in InGaAs quantum wells Peer-reviewed

    K Morita, H Sanada, S Matsuzaka, CY Hu, Y Ohno, H Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　21　(2-4)　1007-1011　2004/03

    DOI： 10.1016/j.physe.2003.11.160 　

    ISSN： 1386-9477

  388. Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier Peer-reviewed

    D Chiba, F Matsukura, H Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　21　(2-4)　966-969　2004/03

    DOI： 10.1016/j.physe.2003.11.172 　

    ISSN： 1386-9477

  389. Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors Peer-reviewed

    FM Hossain, J Nishii, S Takagi, T Sugihara, A Ohtomo, T Fukumura, H Koinuma, H Ohno, M Kawasaki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　21　(2-4)　911-915　2004/03

    DOI： 10.1016/j.physe.2003.11.149 　

    ISSN： 1386-9477

  390. Hysteretic Dynamic Nuclear Polarization in GaAs/AlGaAs(110) Quantum Wells Peer-reviewed

    H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, H. Ohno

    Physical Review B　68　241303(R)-1-241303(R)-4　2003/12/15

  391. Modeling and simulation of polycrystalline ZnO thin-film transistors Peer-reviewed

    FM Hossain, J Nishii, S Takagi, A Ohtomo, T Fukumura, H Fujioka, H Ohno, H Koinuma, M Kawasaki

    JOURNAL OF APPLIED PHYSICS　94　(12)　7768-7777　2003/12

    DOI： 10.1063/1.1628834 　

    ISSN： 0021-8979

  392. Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism Peer-reviewed

    JH Zhao, F Matsukura, K Takamura, D Chiba, Y Ohno, K Ohtani, H Ohno

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　6　(5-6)　507-509　2003/10

    DOI： 10.1016/j.mssp.2003.07.008 　

    ISSN： 1369-8001

  393. Ferromagnetic III-V and II-VI semiconductors Peer-reviewed

    T Dietl, H Ohno

    MRS BULLETIN　28　(10)　714-719　2003/10

    ISSN： 0883-7694

    eISSN： 1938-1425

  394. Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor Peer-reviewed

    D. Chiba, M. Yamanouchi, F. Matsukura, H. Ohno

    Science online　1086608　2003/07

    DOI： 10.1126/science.1086608 　

  395. Magnetization reversal of iron nanoparticles studied by submicron Hall magnetometry Peer-reviewed

    YQ Li, P Xiong, S von Molnar, Y Ohno, H Ohno

    JOURNAL OF APPLIED PHYSICS　93　(10)　7912-7914　2003/05

    DOI： 10.1063/1.1557827 　

    ISSN： 0021-8979

  396. Effect of low-temperature annealing on (Ga,Mn)As trilayer structures Peer-reviewed

    D Chiba, K Takamura, F Matsukura, H Ohno

    APPLIED PHYSICS LETTERS　82　(18)　3020-3022　2003/05

    DOI： 10.1063/1.1571666 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  397. High mobility thin film transistors with transparent ZnO channels Peer-reviewed

    J Nishii, FM Hossain, S Takagi, T Aita, K Saikusa, Y Ohmaki, Ohkubo, I, S Kishimoto, A Ohtomo, T Fukumura, F Matsukura, Y Ohno, H Koinuma, H Ohno, M Kawasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　42　(4A)　L347-L349　2003/04

    DOI： 10.1143/JJAP.42.L347 　

    ISSN： 0021-4922

  398. InAs-based quantum cascade light emitting structures containing a double plasmon waveguide Peer-reviewed

    K Ohtani, H Sakuma, H Ohno

    JOURNAL OF CRYSTAL GROWTH　251　(1-4)　718-722　2003/04

    DOI： 10.1016/S0022-0248(02)02314-X 　

    ISSN： 0022-0248

  399. Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors Peer-reviewed

    H Ohno

    JOURNAL OF CRYSTAL GROWTH　251　(1-4)　285-291　2003/04

    DOI： 10.1016/S0022-0248(02)02290-X 　

    ISSN： 0022-0248

    eISSN： 1873-5002

  400. Electrical Electron Spin Injection with a p-(Ga,Mn)As/n-GaAs Tunnel Junction Peer-reviewed

    M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno

    Journal of Superconductivity: Incorporating Novel Magnetism　16　(1)　167-170　2003/03

    ISSN： 1557-1939

    eISSN： 1557-1947

  401. Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In, Mn)As and ((Al),Ga,Mn)As Peer-reviewed

    D Chiba, M Yamanouchi, F Matsukura, E Abe, Y Ohno, K Ohtani, H Ohno

    JOURNAL OF SUPERCONDUCTIVITY　16　(1)　179-182　2003/02

    ISSN： 0896-1107

  402. Drift transport of spin-polarized electrons in GaAs Peer-reviewed

    H Sanada, Arata, I, Y Ohno, K Ohtani, Z Chen, K Kayanuma, Y Oka, F Matsukura, H Ohno

    JOURNAL OF SUPERCONDUCTIVITY　16　(1)　217-219　2003/02

    ISSN： 0896-1107

  403. InAs/AlSb quantum cascade lasers operating at 10um Peer-reviewed

    K. Ohtani, H. Ohno

    Applied Physics Letters　82　(7)　1003-1005　2003/02

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  404. Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In,Mn)As and ((Al),Ga,Mn)As

    D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno

    Journal of Superconductivity and Novel Magnetism　16　(1)　179-182　2003

    ISSN： 1557-1939 1557-1947

  405. Ferromagnetic semiconductor spintronics Peer-reviewed

    H Ohno

    PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS　171　37-45　2003

    ISSN： 0951-3248

  406. Spin degree of freedom in ferromagnetic semiconductor hetero structures Peer-reviewed

    F Matsukura, D Chiba, Y Ohno, T Dietl, H Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　16　(1)　104-110　2003/01

    DOI： 10.1016/S1386-9477(02)00596-9 　

    ISSN： 1386-9477

    eISSN： 1873-1759

  407. Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures Peer-reviewed

    K Ohtani, N Matsumoto, H Sakuma, H Ohno

    APPLIED PHYSICS LETTERS　82　(1)　37-39　2003/01

    DOI： 10.1063/1.1534939 　

    ISSN： 0003-6951

  408. An InAs-based intersubband quantum cascade laser Peer-reviewed

    K Ohtani, H Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　41　(11B)　L1279-L1280　2002/11

    DOI： 10.1143/JJAP.41.L1279 　

    ISSN： 0021-4922

  409. Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy Peer-reviewed

    T Tsuruoka, N Tachikawa, S Ushioda, F Matsukura, K Takamura, H Ohno

    APPLIED PHYSICS LETTERS　81　(15)　2800-2802　2002/10

    DOI： 10.1063/1.1512953 　

    ISSN： 0003-6951

  410. Relaxation of photoinjected spins during drift transport in GaAs Peer-reviewed

    H Sanada, Arata, I, Y Ohno, Z Chen, K Kayanuma, Y Oka, F Matsukura, H Ohno

    APPLIED PHYSICS LETTERS　81　(15)　2788-2790　2002/10

    DOI： 10.1063/1.1512818 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  411. Magnetic properties of (Al,Ga,Mn)As Peer-reviewed

    K Takamura, F Matsukura, D Chiba, H Ohno

    APPLIED PHYSICS LETTERS　81　(14)　2590-2592　2002/09

    DOI： 10.1063/1.1511540 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  412. Ferromagnetism of magnetic semiconductors: Zhang-Rice limit Peer-reviewed

    T Dietl, F Matsukura, H Ohno

    PHYSICAL REVIEW B　66　(3)　033203　2002/07

    DOI： 10.1103/PhysRevB.66.033203 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  413. Electric Field Control of Ferromagnetism in III-V Ferromagnetic Semiconductor Peer-reviewed

    D. Chiba, M. Yamanouchi, F. Matsukura, Y. Ohno, K. Ohtani, H. Ohno

    Proceedings of the 26th International Conference on the Physics of Semiconductor　F2.2　2002/07

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  414. Electric field effect on the spin transport in GaAs Peer-reviewed

    H. Sanada, I. Arata, Y. Ohno, K. Ohtani, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno

    Proceedings of the 26th International Conference on the Physics of Semiconductor　H241　2002/07

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  415. Ferromagnetic semiconductor spintronics Peer-reviewed

    H. Ohno

    Proceedings of the 26th International Conference on the Physics of Semiconductors　37-45　2002/07

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  416. Hall magnetometry on a single iron nanoparticle Peer-reviewed

    YQ Li, P Xiong, S von Molnar, S Wirth, Y Ohno, H Ohno

    APPLIED PHYSICS LETTERS　80　(24)　4644-4646　2002/06

    DOI： 10.1063/1.1487921 　

    ISSN： 0003-6951

  417. Ferromagnetic semiconductors for spin electronics Peer-reviewed

    H Ohno

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　242　105-107　2002/04

    DOI： 10.1016/S0304-8853(01)01210-0 　

    ISSN： 0304-8853

    eISSN： 1873-4766

  418. Growth and properties of (Ga,Mn)As on Si (100) substrate Peer-reviewed

    JH Zhao, F Matsukura, E Abe, D Chiba, Y Ohno, K Takamura, H Ohno

    JOURNAL OF CRYSTAL GROWTH　237　1349-1352　2002/04

    DOI： 10.1016/S0022-0248(01)02181-9 　

    ISSN： 0022-0248

  419. Valence band barrier at (Ga,Mn)As/GaAs interfaces Peer-reviewed

    Y Ohno, Arata, I, F Matsukura, H Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　13　(2-4)　521-524　2002/03

    DOI： 10.1016/S1386-9477(02)00185-6 　

    ISSN： 1386-9477

    eISSN： 1873-1759

  420. Semiconductor spintronics Peer-reviewed

    H Akinaga, H Ohno

    IEEE TRANSACTIONS ON NANOTECHNOLOGY　1　(1)　19-31　2002/03

    DOI： 10.1109/TNANO.2002.1005423 　

    ISSN： 1536-125X

    eISSN： 1941-0085

  421. Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures Peer-reviewed

    DK Young, E Johnston-Halperin, DD Awschalom, Y Ohno, H Ohno

    APPLIED PHYSICS LETTERS　80　(9)　1598-1600　2002/03

    DOI： 10.1063/1.1458535 　

    ISSN： 0003-6951

  422. chapter 1 III-V Ferromagnetic Semiconductors Peer-reviewed

    F. Matsukura, H. Ohno, T. Dietl

    Handbook of Magnetic Materials　14　1-87　2002

    DOI： 10.1016/S1567-2719(09)60005-6 　

    ISSN： 1567-2719

  423. Control of ferromagnetism in field-effect transistor of a magnetic semiconductor Peer-reviewed

    F Matsukura, D Chiba, T Omiya, E Abe, T Dietl, Y Ohno, K Ohtani, H Ohno

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES　12　(1-4)　351-355　2002/01

    DOI： 10.1016/S1386-9477(01)00275-2 　

    ISSN： 1386-9477

    eISSN： 1873-1759

  424. Semiconductor Spin Electronics Peer-reviewed

    Hideo Ohno, Fumihiro Matsukura, Yuzo Ohno

    JSAP International　5　4-13　2002

  425. Microscopic identification of dopant atoms in Mn-doped GaAs layers Peer-reviewed

    T Tsuruoka, R Tanimoto, N Tachikawa, S Ushioda, F Matsukura, H Ohno

    SOLID STATE COMMUNICATIONS　121　(2-3)　79-82　2002

    DOI： 10.1016/S0038-1098(01)00471-9 　

    ISSN： 0038-1098

  426. A Spin Esaki Diode Peer-reviewed

    M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno

    Japanese Journal of Applied Physics　40　(12A)　L1274-L1276　2001/12

    DOI： 10.1143/JJAP.40.L1274 　

  427. Origin of enhanced dynamic neclear polarization and all-optical nuclear magnetic resonance in gaAs quantum wells Peer-reviewed

    G. Salis, D. T. Fuchs, J. M. Kikkawa, D. D. Awschalom, Y. Ohno, H. Ohno

    Phys. Rev. B　64　195304-1-195304-10　2001/11/15

  428. Spin Polarization dependent far infrared absorption in Ga1-xMnxAs Peer-reviewed

    Y. Nagai, T. Kunimoto, K. Nagasaka, H. Nojiri, M. Motokawa, F. Matsukura, T. Dietl, H. Ohno

    Japanese Journal of Applied Physics　40　(11)　6231-6243　2001/11

    DOI： 10.1143/JJAP.40.6231 　

  429. Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy Peer-reviewed

    J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, D. Chiba, H. Ohno

    Applied Physics Letters　79　2776-2779　2001/10/22

    DOI： 10.1063/1.1413732 　

  430. Spin-dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures Peer-reviewed

    H Ohno, F Matsukura, Y Ohno

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　84　(1-2)　70-74　2001/07

    DOI： 10.1016/S0921-5107(01)00572-4 　

    ISSN： 0921-5107

  431. Effect of barrier width on the performance of quantum well infrared photodetector Peer-reviewed

    SKH Sim, HC Liu, A Shen, M Gao, KF Lee, M Buchanan, Y Ohno, H Ohno, EH Li

    INFRARED PHYSICS & TECHNOLOGY　42　(3-5)　115-121　2001/06

    DOI： 10.1016/S1350-4495(01)00067-6 　

    ISSN： 1350-4495

  432. Dual-band photodetectors based on interband and intersubband transitions Peer-reviewed

    HC Liu, CY Song, A Shen, M Gao, E Dupont, PJ Poole, ZR Wasilewski, M Buchanan, PH Wilson, BJ Robinson, DA Thompson, Y Ohno, H Ohno

    INFRARED PHYSICS & TECHNOLOGY　42　(3-5)　163-170　2001/06

    DOI： 10.1016/S1350-4495(01)00072-X 　

    ISSN： 1350-4495

  433. Growth and properties of (Ga,Mn)As films with high Mn concentration Peer-reviewed

    K Takamura, F Matsukura, Y Ohno, H Ohno

    JOURNAL OF APPLIED PHYSICS　89　(11)　7024-7026　2001/06

    DOI： 10.1063/1.1357841 　

    ISSN： 0021-8979

  434. Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures Peer-reviewed

    K Ohtani, H Sakuma, H Ohno

    APPLIED PHYSICS LETTERS　78　(26)　4148-4150　2001/06

    DOI： 10.1063/1.1381034 　

    ISSN： 0003-6951

  435. Intersubband electroluminescence from InAs-based quantum cascade structures Peer-reviewed

    K. Ohtani, H. Ohno

    IPAP Conference Series　2　129-130　2001/05

  436. Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures Peer-reviewed

    Y Ohno, Arata, I, F Matsukura, H Ohno, DK Young, B Beschoten, DD Awschalom

    PHYSICA E　10　(1-3)　489-492　2001/05

    DOI： 10.1016/S1386-9477(01)00143-6 　

    ISSN： 1386-9477

  437. Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions Peer-reviewed

    Arata, I, Y Ohno, F Matsukura, H Ohno

    PHYSICA E　10　(1-3)　288-291　2001/05

    DOI： 10.1016/S1386-9477(01)00101-1 　

    ISSN： 1386-9477

  438. Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures Peer-reviewed

    D Chiba, N Akiba, F Matsukura, Y Ohno, H Ohno

    PHYSICA E　10　(1-3)　278-282　2001/05

    DOI： 10.1016/S1386-9477(01)00100-X 　

    ISSN： 1386-9477

  439. Magnetic circular dichroism in Mn 2p core absorption of Ga1-xMnxAs Peer-reviewed

    S Ueda, S Imada, T Muro, Y Saitoh, S Suga, F Matsukura, H Ohno

    PHYSICA E　10　(1-3)　210-214　2001/05

    DOI： 10.1016/S1386-9477(01)00084-4 　

    ISSN： 1386-9477

  440. Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates Peer-reviewed

    T Omiya, F Matsukura, A Shen, Y Ohno, H Ohno

    PHYSICA E　10　(1-3)　206-209　2001/05

    DOI： 10.1016/S1386-9477(01)00083-2 　

    ISSN： 1386-9477

  441. Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes Peer-reviewed

    T Fukumura, T Shono, K Inaba, T Hasegawa, H Koinuma, F Matsukura, H Ohno

    PHYSICA E　10　(1-3)　135-138　2001/05

    DOI： 10.1016/S1386-9477(01)00068-6 　

    ISSN： 1386-9477

  442. Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells Peer-reviewed

    T Adachi, Y Ohno, F Matsukura, H Ohno

    PHYSICA E　10　(1-3)　36-39　2001/05

    DOI： 10.1016/S1386-9477(01)00049-2 　

    ISSN： 1386-9477

  443. Optical manipulation of nuclear spin by a two-dimensional electron gas Peer-reviewed

    G. Salis, D. T. Fuchs, J. M. Kikkawa, D. D. Awschalom, Y. Ohno, H. Ohno

    Phys. Rev. B　86　(12)　2677-2680　2001/03/19

    DOI： 10.1103/PhysRevLett.86.2677 　

  444. Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots Peer-reviewed

    H Ofuchi, T Kubo, M Tabuchi, Y Takeda, F Matsukura, SP Guo, A Shen, H Ohno

    JOURNAL OF APPLIED PHYSICS　89　(1)　66-70　2001/01

    DOI： 10.1063/1.1330761 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  445. Long wavelength intersubband light emitting structure based on type-II InAs/GaSb/AlSb hetero-structures Peer-reviewed

    H Sakuma, O Keita, H Ohno

    PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS　2　122-124　2001

  446. Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures Peer-reviewed

    H Ohno, F Matsukura, Y Ohno

    SOLID STATE COMMUNICATIONS　119　(4-5)　281-289　2001

    DOI： 10.1016/S0038-1098(01)00175-2 　

    ISSN： 0038-1098

  447. Hole-mediated ferromagnetismin tetrahedrally coordinated semiconductors tetrahedrally Peer-reviewed

    T. Dietl, H. Ohno, F. Matsukura

    Physical Review B(/)-　63　(,19205-1-21)　2001

  448. Toward functional spintronics Peer-reviewed

    H. Ohno

    Science(/)-　840-841　2001

  449. Ferromagnetism in III-V and II-Ⅵ semiconductor structures Peer-reviewed

    T. Dietl, H. Ohno

    Physica E(/)-　9(1)　185-193　2001

    DOI： 10.1016/S1386-9477(00)00193-4 　

  450. A ferromagnetic III-V semiconductor: (Ga,Mn)As Peer-reviewed

    H Ohno, F Matsukura

    SOLID STATE COMMUNICATIONS　117　(3)　179-186　2001

    DOI： 10.1016/S0038-1098(00)00436-1 　

    ISSN： 0038-1098

  451. Electric-field control of ferromagnetism Peer-reviewed

    H Ohno, D Chiba, F Matsukura, T Omiya, E Abe, T Dietl, Y Ohno, K Ohtani

    NATURE　408　(6815)　944-946　2000/12

    DOI： 10.1038/35050040 　

    ISSN： 0028-0836

  452. Surface morphologies of III-V based magnetic semiconductor (Ga,Mn) As grown by molecular beam epitaxy Peer-reviewed

    Yang, JR, H Yasuda, SL Wang, F Matsukura, Y Ohno, H Ohno

    APPLIED SURFACE SCIENCE　166　(1-4)　242-246　2000/10

    DOI： 10.1016/S0169-4332(00)00429-3 　

    ISSN： 0169-4332

  453. Arsenic flux dependence of InAs nanostructure formation on GaAs (211) B surface Peer-reviewed

    H Yasuda, F Matsukura, Y Ohno, H Ohno

    APPLIED SURFACE SCIENCE　166　(1-4)　413-417　2000/10

    DOI： 10.1016/S0169-4332(00)00458-X 　

    ISSN： 0169-4332

  454. Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures Peer-reviewed

    D Chiba, N Akiba, F Matsukura, Y Ohno, H Ohno

    APPLIED PHYSICS LETTERS　77　(12)　1873-1875　2000/09

    DOI： 10.1063/1.1310626 　

    ISSN： 0003-6951

  455. Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope Peer-reviewed

    T Shono, T Hasegawa, T Fukumura, F Matsukura, H Ohno

    APPLIED PHYSICS LETTERS　77　(9)　1363-1365　2000/08

    DOI： 10.1063/1.1290273 　

    ISSN： 0003-6951

  456. Magnetic domain structures of (Ga,Mn)As investigated by scanning Hall probe microscopy Peer-reviewed

    T Shono, T Fukumura, M Kawasaki, H Koinuma, T Hasegawa, T Endo, K Kitazawa, F Matsukura, H Ohno

    PHYSICA B　284　1171-1172　2000/07

    ISSN： 0921-4526

  457. Ferromagnetic III-V heterostructures Peer-reviewed

    H Ohno

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B　18　(4)　2039-2043　2000/07

    DOI： 10.1116/1.1305944 　

    ISSN： 1071-1023

  458. Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates Peer-reviewed

    K Ohtani, A Sato, Y Ohno, F Matsukura, H Ohno

    APPLIED SURFACE SCIENCE　159　313-317　2000/06

    DOI： 10.1016/S0169-4332(00)00106-9 　

    ISSN： 0169-4332

  459. MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn) As Peer-reviewed

    Y Ohno, Arata, I, F Matsukura, K Ohtani, S Wang, H Ohno

    APPLIED SURFACE SCIENCE　159　308-312　2000/06

    DOI： 10.1016/S0169-4332(00)00107-0 　

    ISSN： 0169-4332

  460. Molecular beam epitaxy of GaSb with high concentration of Mn Peer-reviewed

    F Matsukura, E Abe, Y Ohno, H Ohno

    APPLIED SURFACE SCIENCE　159　265-269　2000/06

    DOI： 10.1016/S0169-4332(00)00108-2 　

    ISSN： 0169-4332

  461. Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As Peer-reviewed

    H Ohldag, Solinus, V, FU Hillebrecht, JB Goedkoop, M Finazzi, F Matsukura, H Ohno

    APPLIED PHYSICS LETTERS　76　(20)　2928-2930　2000/05

    DOI： 10.1063/1.126519 　

    ISSN： 0003-6951

  462. Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells Peer-reviewed

    T Adachi, Y Ohno, R Terauchi, F Matsukura, H Ohno

    PHYSICA E　7　(3-4)　1015-1019　2000/05

    DOI： 10.1016/S1386-9477(00)00107-7 　

    ISSN： 1386-9477

  463. Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb Peer-reviewed

    E Abe, F Matsukura, H Yasuda, Y Ohno, H Ohno

    PHYSICA E　7　(3-4)　981-985　2000/05

    DOI： 10.1016/S1386-9477(00)00100-4 　

    ISSN： 1386-9477

  464. Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field Peer-reviewed

    T Omiya, F Matsukura, T Dietl, Y Ohno, T Sakon, M Motokawa, H Ohno

    PHYSICA E　7　(3-4)　976-980　2000/05

    DOI： 10.1016/S1386-9477(00)00099-0 　

    ISSN： 1386-9477

  465. Magnetotransport properties of (Ga, Mn)Sb Peer-reviewed

    F Matsukura, E Abe, H Ohno

    JOURNAL OF APPLIED PHYSICS　87　(9)　6442-6444　2000/05

    DOI： 10.1063/1.372732 　

    ISSN： 0021-8979

  466. Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures Peer-reviewed

    N Akiba, D Chiba, K Nakata, F Matsukura, Y Ohno, H Ohno

    JOURNAL OF APPLIED PHYSICS　87　(9)　6436-6438　2000/05

    DOI： 10.1063/1.372730 　

    ISSN： 0021-8979

  467. Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures Peer-reviewed

    K Ohtani, H Ohno

    PHYSICA E　7　(1-2)　80-83　2000/04

    DOI： 10.1016/S1386-9477(99)00282-9 　

    ISSN： 1386-9477

  468. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors Peer-reviewed

    T Dietl, H Ohno, F Matsukura, J Cibert, D Ferrand

    SCIENCE　287　(5455)　1019-1022　2000/02

    DOI： 10.1126/science.287.5455.1019 　

    ISSN： 0036-8075

  469. Electron spin relaxation beyond D'yakonov-Perel' interaction in GaAs/AlGaAs quantum wells Peer-reviewed

    Y Ohno, R Terauchi, T Adachi, F Matsukura, H Ohno

    PHYSICA E　6　(1-4)　817-820　2000/02

    DOI： 10.1016/S1386-9477(99)00251-9 　

    ISSN： 1386-9477

  470. Ferromagnetism and heterostructures of III-V magnetic semiconductors Peer-reviewed

    H Ohno

    PHYSICA E　6　(1-4)　702-708　2000/02

    DOI： 10.1016/S1386-9477(99)00177-0 　

    ISSN： 1386-9477

  471. Bilayer v=2 quantum Hall state in parallel high magnetic field Peer-reviewed

    A Sawada, ZF Ezawa, H Ohno, Y Horikoshi, N Kumada, Y Ohno, S Kishimoto, F Matsukura, S Nagahama

    PHYSICA E　6　(1-4)　615-618　2000/02

    DOI： 10.1016/S1386-9477(99)00129-0 　

    ISSN： 1386-9477

  472. Ferromagnetism induced by free carriers in p-type structures of diluted magnetic semiconductors Peer-reviewed

    T. Dietl, J. Chbert, P. Kossacki, D. Ferrand, S. Tatarenko, A. Waisiela, Y. Merle D'aubigne, F. Matsukura, N. Akiba, H. Ohno

    Physica E　7(nos.3-4)　967-975　2000

    DOI： 10.1016/S1386-9477(00)00098-9 　

  473. Surfactant effect of Mn on the formation of self-organized InAs nanostructures Peer-reviewed

    SP Guo, A Shen, H Yasuda, Y Ohno, F Matsukura, H Ohno

    JOURNAL OF CRYSTAL GROWTH　208　(1-4)　799-803　2000/01

    DOI： 10.1016/S0022-0248(99)00465-0 　

    ISSN： 0022-0248

  474. Electrical spin injection in a ferromagnetic semiconductor heterostructure Peer-reviewed

    Y Ohno, DK Young, B Beschoten, F Matsukura, H Ohno, DD Awschalom

    NATURE　402　(6763)　790-792　1999/12

    DOI： 10.1038/45509 　

    ISSN： 0028-0836

  475. MOCVD growth and transport investigation of two-dimensional electron gas in AlGaN/GaN heterostructures on sapphire substrates Peer-reviewed

    T Wang, Y Ohno, M Lachab, D Nakagawa, T Shirahama, S Sakai, H Ohno

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH　216　(1)　743-748　1999/11

    DOI： 10.1002/(SICI)1521-3951(199911)216:1<743::AID-PSSB743>3.0.CO;2-G 　

    ISSN： 0370-1972

  476. Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)As Peer-reviewed

    B Beschoten, PA Crowell, Malajovich, I, DD Awschalom, F Matsukura, A Shen, H Ohno

    PHYSICAL REVIEW LETTERS　83　(15)　3073-3076　1999/10

    DOI： 10.1103/PhysRevLett.83.3073 　

    ISSN： 0031-9007

  477. Properties of ferromagnetic III-V semiconductors Peer-reviewed

    H Ohno

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS　200　(1-3)　110-129　1999/10

    DOI： 10.1016/S0304-8853(99)00444-8 　

    ISSN： 0304-8853

  478. Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors Peer-reviewed

    Y Iye, A Oiwa, A Endo, S Katsumoto, F Matsukura, A Shen, H Ohno, H Munekata

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　63　(1-2)　88-95　1999/08

    ISSN： 0921-5107

  479. Interlayer coherence in nu=1 and nu=2 bilayer quantum Hall states Peer-reviewed

    A Sawada, ZF Ezawa, H Ohno, Y Horikoshi, A Urayama, Y Ohno, S Kishimoto, F Matsukura, N Kumada

    PHYSICAL REVIEW B　59　(23)　14888-14891　1999/06

    DOI： 10.1103/PhysRevB.59.14888 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  480. Electron mobility exceeding 10(4) cm(2)/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate Peer-reviewed

    T Wang, Y Ohno, M Lachab, D Nakagawa, T Shirahama, S Sakai, H Ohno

    APPLIED PHYSICS LETTERS　74　(23)　3531-3533　1999/06

    DOI： 10.1063/1.124151 　

    ISSN： 0003-6951

  481. New 'coherent' bilayer quantum Hall systems Peer-reviewed

    A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, Y. Ohno, S. KIshimoto, F. Matsukura, A. Urayama, N. Kumada

    Proc. of 6th Int. Symp. on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo '98)　207-210　1999/05

  482. Mid-infrared intersubband electroluminescence in InAs AlSb cascade structures Peer-reviewed

    K Ohtani, H Ohno

    ELECTRONICS LETTERS　35　(11)　935-936　1999/05

    DOI： 10.1049/el:19990624 　

    ISSN： 0013-5194

  483. Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth Peer-reviewed

    H Yasuda, H Ohno

    APPLIED PHYSICS LETTERS　74　(22)　3275-3277　1999/05

    DOI： 10.1063/1.123318 　

    ISSN： 0003-6951

  484. Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers Peer-reviewed

    J Szczytko, W Mac, A Twardowski, F Matsukura, H Ohno

    PHYSICAL REVIEW B　59　(20)　12935-12939　1999/05

    DOI： 10.1103/PhysRevB.59.12935 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  485. X-ray diffraction study of InAs AlSb interface bonds grown by molecular beam epitaxy Peer-reviewed

    A Sato, K Ohtani, R Terauchi, Y Ohno, F Matsukura, H Ohno

    JOURNAL OF CRYSTAL GROWTH　201　861-863　1999/05

    DOI： 10.1016/S0022-0248(98)01475-4 　

    ISSN： 0022-0248

  486. InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates Peer-reviewed

    SP Guo, A Shen, F Matsukura, Y Ohno, H Ohno

    JOURNAL OF CRYSTAL GROWTH　201　684-688　1999/05

    DOI： 10.1016/S0022-0248(98)01442-0 　

    ISSN： 0022-0248

  487. Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As Peer-reviewed

    A Shen, F Matsukura, SP Guo, Y Sugawara, H Ohno, M Tani, H Abe, HC Liu

    JOURNAL OF CRYSTAL GROWTH　201　679-683　1999/05

    DOI： 10.1016/S0022-0248(98)01447-X 　

    ISSN： 0022-0248

  488. Carrier mobility dependence of electron spin relaxation in GaAs quantum wells Peer-reviewed

    R Terauchi, Y Ohno, T Adachi, A Sato, F Matsukura, A Tackeuchi, H Ohno

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　38　(4B)　2549-2551　1999/04

    DOI： 10.1143/JJAP.38.2549 　

    ISSN： 0021-4922

  489. Intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures Peer-reviewed

    K Ohtani, H Ohno

    APPLIED PHYSICS LETTERS　74　(10)　1409-1411　1999/03

    DOI： 10.1063/1.123566 　

    ISSN： 0003-6951

  490. Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb Peer-reviewed

    A Oiwa, A Endo, S Katsumoto, Y Iye, H Ohno, H Munekata

    PHYSICAL REVIEW B　59　(8)　5826-5831　1999/02

    DOI： 10.1103/PhysRevB.59.5826 　

    ISSN： 1098-0121

    eISSN： 1550-235X

  491. Properties of (Ga,Mn)As and their dependence on molecular beam growth conditions Peer-reviewed

    F. Matsukura, A. Shen, Y. Sugawara, T. Omiya, Y. Ohno, H. Ohno

    Proc. 25th Int. Symp. Compound Semiconductors, Institute of Physics Conference Series　(162)　547-552　1999

  492. 半導体結晶成長 Peer-reviewed

    大野英男

    コロナ社　1999

  493. Ferromagnetic III-V semiconductors and their heterostructures Peer-reviewed

    H. Ohno

    Proceedings of the 24th International Conference on the Physics of Semiconductors　139-146　1999

  494. Spin relaxation in GaAs(110) quantum wells Peer-reviewed

    Y. Ohno, R. Terachi, T. Adachi, F. Matsukura, H. Ohno

    Physical Review Letters　1999

    DOI： 10.1103/PhysRevLett.83.4196 　

  495. Integrated micromechanical cantilever magnetometry of Ga1-xMnxAs Peer-reviewed

    J. G. E. Harris, D. D. Awshalom, F. Matsukura, H. Ohno, K. D. Maranowski, A. C. Gossard

    Applied Physics Letters　75　(8)　1140-1143　1999

    DOI： 10.1063/1.124622 　

  496. Spin-dependent tunneling and properties of ferromagnetic(Ga, Mn)As Peer-reviewed

    H. Ohno, F. Matsukura, T. Omiya, N. Akiba

    J. Appl. Phys.　85　(8)　4277-4282　1999

    DOI： 10.1063/1.370343 　

  497. Magnetotransport properties of(Ga, Mn)As/GaAs/(Ga, Mn)As trilayer structures Peer-reviewed

    F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno

    J. Magnetics Society of Japan　23　(1)　88-92　1999

    Publisher: The Magnetics Society of Japan

    DOI： 10.3379/jmsjmag.23.99 　

    ISSN： 0285-0192

    More details Close

    All-semiconductor ferromagnet/nonmagnet/ferromagnet trilayer structures using (Ga, Mn)As as a ferromagnetic layer and GaAs a nonmagnetic layer were prepared and their magnetotransport properties were investigated. The results show that the interaction between the two (Ga, Mn)As layers decreases as the GaAs thickness increases. This shows that the carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers in the present all-semiconductor system.

  498. III-V based ferromagnetic semiconductors Peer-reviewed

    H. Ohno

    J. Magnetics Society of Japan　23　(1)　88-92　1999

    Publisher: The Magnetics Society of Japan

    DOI： 10.3379/jmsjmag.23.88 　

    ISSN： 0285-0192

    More details Close

    Current status of III-V based ferromagnetic semiconductors, especially (Ga, Mn)As, a GaAs based diluted magnetic semiconductor, is reviewed. Low solubility of magnetic elements was overcome by low temperature nonequilibrium molecular beam epitaxial growth to realize successfully (Ga, Mn)As as well as (In, Mn)As. Magnetization measurements showed that GaAs based (Ga, Mn) As is ferromagnetic with Curie temperature TC as high as 110 K. Magnetotransport measurements of (Ga, Mn) As epitaxial films revealed that the p-d exchange N0β is 3 eV. This strong interaction was shown to be large enough to explain the high TC by the RKKY interaction. Multilayer heterosturctures including superlattices and resonant tunneling diodes (RTD's) were also successfully fabricated. The magnetic coupling between two ferromagnetic (Ga, Mn)As films separated by a nonmagnetic GaAs (or AlGaAs) layer was found to be a function of thickness and composition of the intermediary layer, indicating the critical role of the holes on the magnetic coupling. This observation of magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin dependent tunneling in RTD's, showed the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.

  499. ESR study of Mn doped II-VI and III-V DMS Peer-reviewed

    H Nojiri, M Motokawa, S Takeyama, F Matsukura, H Ohno

    PHYSICA B-CONDENSED MATTER　256　569-572　1998/12

    DOI： 10.1016/S0921-4526(98)00504-3 　

    ISSN： 0921-4526

  500. Cyclotron resonance in Cd1-xFexS and Ga1-xMnxAs at megagauss magnetic fields Peer-reviewed

    YH Matsuda, H Arimoto, N Miura, A Twardowski, H Ohno, A Shen, F Matsukura

    PHYSICA B-CONDENSED MATTER　256　565-568　1998/12

    DOI： 10.1016/S0921-4526(98)00673-5 　

    ISSN： 0921-4526

  501. Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As Peer-reviewed

    N Akiba, F Matsukura, Y Ohno, A Shen, K Ohtani, T Sakon, M Motokawa, H Ohno

    PHYSICA B-CONDENSED MATTER　256　561-564　1998/12

    DOI： 10.1016/S0921-4526(98)00490-6 　

    ISSN： 0921-4526

  502. Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime Peer-reviewed

    S Kishimoto, Y Ohno, F Matsukura, H Ohno

    PHYSICA B-CONDENSED MATTER　256　535-539　1998/12

    DOI： 10.1016/S0921-4526(98)00674-7 　

    ISSN： 0921-4526

  503. Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures Peer-reviewed

    N Akiba, F Matsukura, A Shen, Y Ohno, H Ohno, A Oiwa, S Katsumoto, Y Iye

    APPLIED PHYSICS LETTERS　73　(15)　2122-2124　1998/10

    DOI： 10.1063/1.122398 　

    ISSN： 0003-6951

  504. Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope Peer-reviewed

    T Tsuruoka, Y Ohizumi, S Ushioda, Y Ohno, H Ohno

    APPLIED PHYSICS LETTERS　73　(11)　1544-1546　1998/09

    DOI： 10.1063/1.122200 　

    ISSN： 0003-6951

  505. Magnetotransport and magnetic properties of (Ga,Mn)As and its heterostructures Peer-reviewed

    H Ohno

    ACTA PHYSICA POLONICA A　94　(2)　155-164　1998/08

    ISSN： 0587-4246

  506. Making nonmagnetic semiconductors ferromagnetic Peer-reviewed

    H Ohno

    SCIENCE　281　(5379)　951-956　1998/08

    DOI： 10.1126/science.281.5379.951 　

    ISSN： 0036-8075

  507. Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy Peer-reviewed

    H Ohno, N Akiba, F Matsukura, A Shen, K Ohtani, Y Ohno

    APPLIED PHYSICS LETTERS　73　(3)　363-365　1998/07

    DOI： 10.1063/1.121835 　

    ISSN： 0003-6951

  508. Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems Peer-reviewed

    S Kishimoto, Y Ohno, F Matsukura, H Sakaki, H Ohno

    SOLID-STATE ELECTRONICS　42　(7-8)　1187-1190　1998/07

    DOI： 10.1016/S0038-1101(98)00001-X 　

    ISSN： 0038-1101

  509. Well-width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers Peer-reviewed

    K Ohtani, Y Ohno, F Matsukura, H Ohno

    PHYSICA E　2　(1-4)　200-203　1998/07

    DOI： 10.1016/S1386-9477(98)00043-5 　

    ISSN： 1386-9477

  510. InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates Peer-reviewed

    SP Guo, A Shen, Y Ohno, H Ohno

    PHYSICA E　2　(1-4)　672-677　1998/07

    DOI： 10.1016/S1386-9477(98)00137-4 　

    ISSN： 1386-9477

  511. Ferromagnetic (Ga, Mn)As and its heterostructures Peer-reviewed

    H Ohno, F Matsukura, A Shen, Y Sugawara, N Akiba, T Kuroiwa

    PHYSICA E　2　(1-4)　904-908　1998/07

    DOI： 10.1016/S1386-9477(98)00184-2 　

    ISSN： 1386-9477

  512. Interlayer quantum coherence and anomalous stability of v-1 bilayer quantum Hall state Peer-reviewed

    A. Sawada, Z. F. Eazawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, Y. Ohno, M. Yasumoto, A. Urayama

    Physica B　249-251　836-840　1998/06/17

    DOI： 10.1016/S0921-4526(98)00326-3 　

  513. Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study Peer-reviewed

    A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, F. Matsukura

    Applied Surface Science　130-132　382-397　1998/06

    DOI： 10.1016/S0169-4332(98)00087-7 　

  514. Self-organized (In, Mn) as diluted magnetic semiconductor nanostructures on GaAs substrates Peer-reviewed

    SP Guo, H Ohno, A Shen, F Matsukura, Y Ohno

    APPLIED SURFACE SCIENCE　130　797-802　1998/06

    DOI： 10.1016/S0169-4332(98)00157-3 　

    ISSN： 0169-4332

  515. Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs (211)B Peer-reviewed

    SP Guo, H Ohno, AD Shen, Y Ohno, F Matsukura

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　37　(3B)　1527-1531　1998/03

    DOI： 10.1143/JJAP.37.1527 　

    ISSN： 0021-4922

  516. Giant negative magnetoresistance of (Ga, Mn)As/GaAs in the vicinity of a metal-insulator transitions Peer-reviewed

    A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukura, A. Shen, Y. Sugawara

    physica status solidi (b)　205　(1)　167-171　1998/01

    DOI： 10.1002/(SICI)1521-3951(199801)205:1<167::AID-PSSB167>3.0.CO;2-O 　

  517. Strongly anisotropic hopping conduction in (Ga, Mn)As/GaAs Peer-reviewed

    S Katsumoto, A Oiwa, Y Iye, H Ohno, F Matsukura, A Shen, Y Sugawara

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH　205　(1)　115-118　1998/01

    DOI： 10.1002/(SICI)1521-3951(199801)205:1<115::AID-PSSB115>3.0.CO;2-F 　

    ISSN： 0370-1972

  518. Properties of(Ga, Mn)As and their dependence on molecular beam growth conditions Peer-reviewed

    F. Matsukura, A. Shen, Y. Sugawara, T. Omiya, Y. Ohno, H. Ohno

    Inst. Phys. Conf. Ser.　(162)　547-552　1998

  519. Magnetotransport properties of all semiconductor(Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As tri-layer structure Peer-reviewed

    F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno

    Physica B　256-258　573-576　1998

    DOI： 10.1016/S0921-4526(98)00495-5 　

  520. υ=1 bilayer quantum Hall state at arbitrary electron distribution in a double qrantum well Peer-reviewed

    Y. Ohno, A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, M. Yasumoto, A. Urayama

    Solid-State Electronics　42　(7-8)　1183-1185　1998

    DOI： 10.1016/S0038-1101(97)00326-2 　

  521. Phase transition in the υ=2 bilayer quantum Hall state Peer-reviewed

    A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, Y. Ohno, S. Kishimoto, F. Matsukura, M. Yasumoto, A. Urayama

    Physical Review Letters　80　(20)　4534-4537　1998

    DOI： 10.1103/PhysRevLett.80.4534 　

  522. Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure : A reflection high-energy electron diffraction study Peer-reviewed

    A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, F. Matsukura

    Applied Surface Science　130-132　382-397　1998

    DOI： 10.1016/S0169-4332(98)00087-7 　

  523. Superlattice and maltilayer structures based on ferromagnetic semiconductor(Ga, Mn)As Peer-reviewed

    A. Shen, H. Ohno, F. Matsukura, H. C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, Y. Ohno

    Physica B　249-251　809-813　1998

    DOI： 10.1016/S0921-4526(98)00319-6 　

  524. Transport properties and origin of ferromagnetism in(Ga, Mn)As Peer-reviewed

    F. Matsukura, H. Ohno, A. Shen, Y. Sugawara

    Physical Review B　57　(4)　R2037-R2040　1998

    DOI： 10.1103/PhysRevB.57.R2037 　

  525. Faraday rotation of ferromagnetic (Ga, Mn)As Peer-reviewed

    T Kuroiwa, T Yasuda, F Matsukura, A Shen, Y Ohno, Y Segawa, H Ohno

    ELECTRONICS LETTERS　34　(2)　190-192　1998/01

    DOI： 10.1049/el:19980128 　

    ISSN： 0013-5194

  526. Preparation and properties of III-V based new diluted magnetic semiconductors Peer-reviewed

    H Ohno

    ADVANCES IN COLLOID AND INTERFACE SCIENCE　71-2　61-75　1997/09

    DOI： 10.1016/S0001-8686(97)00010-9 　

    ISSN： 0001-8686

  527. Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure Peer-reviewed

    A Shen, Y Horikoshi, H Ohno, SP Guo

    APPLIED PHYSICS LETTERS　71　(11)　1540-1542　1997/09

    DOI： 10.1063/1.119973 　

    ISSN： 0003-6951

  528. Anomalous stability of nu=1 bilayer quantum Hall state Peer-reviewed

    A Sawada, ZF Ezawa, H Ohno, Y Horikoshi, O Sugie, S Kishimoto, F Matsukura, Y Ohno, M Yasumoto

    SOLID STATE COMMUNICATIONS　103　(8)　447-451　1997/08

    DOI： 10.1016/S0038-1098(97)00221-4 　

    ISSN： 0038-1098

  529. Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs Peer-reviewed

    A Oiwa, S Katsumoto, A Endo, M Hirasawa, Y Iye, H Ohno, F Matsukura, A Shen, Y Sugawara

    SOLID STATE COMMUNICATIONS　103　(4)　209-213　1997/07

    DOI： 10.1016/S0038-1098(97)00178-6 　

    ISSN： 0038-1098

  530. Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs Peer-reviewed

    A Shen, H Ohno, F Matsukura, Y Sugawara, N Akiba, T Kuroiwa, A Oiwa, A Endo, S Katsumoto, Y Iye

    JOURNAL OF CRYSTAL GROWTH　175　1069-1074　1997/05

    DOI： 10.1016/S0022-0248(96)00967-0 　

    ISSN： 0022-0248

  531. Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells Peer-reviewed

    A Mathur, Y Ohno, F Matsukura, K Ohtani, N Akiba, T Kuroiwa, H Nakajima, H Ohno

    APPLIED SURFACE SCIENCE　113　90-96　1997/04

    DOI： 10.1016/S0169-4332(96)00879-3 　

    ISSN： 0169-4332

  532. Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures Peer-reviewed

    A Shen, F Matsukura, Y Sugawara, T Kuroiwa, H Ohno, A Oiwa, A Endo, S Katsumoto, Y Iye

    APPLIED SURFACE SCIENCE　113　183-188　1997/04

    DOI： 10.1016/S0169-4332(96)00865-3 　

    ISSN： 0169-4332

  533. Growth and properties of (Ga, Mn) As: A new III-V diluted magnetic semiconductor Peer-reviewed

    F Matsukura, A Oiwa, A Shen, Y Sugawara, N Akiba, T Kuroiwa, H Ohno, A Endo, S Katsumoto, Y Iye

    APPLIED SURFACE SCIENCE　113　178-182　1997/04

    DOI： 10.1016/S0169-4332(96)00790-8 　

    ISSN： 0169-4332

  534. InAs self-organized quantam dashes grown on GaAs(211)B Peer-reviewed

    S. P. Guo, H. Ohno, A. Shen, F. Matsukura, Y. Ohno

    Appl. Phys. Lett　71　(11)　1540-1542　1997

    DOI： 10.1063/1.119007 　

  535. Electvical and magnetic properties of (In, Mn)AS/(A1, Ga)Sb heterostructures and bulk(Ga, Mn)AS Peer-reviewed

    A. Oiwa, Y. Iye, S. Katsumoto, A. Endo, M. Hirasawa, H. Ohno, F. Matsukura, A. Shen, H. Munekata

    Proc, 12th Int, Conf on High Magnetic Fields in the Physics of SemiconductorsII　885-888　1997

  536. (Ga, Mn)As/GaAs diluted megnetic semiconductor superlattice Structures prepared by molecular beam epitaxy Peer-reviewed

    A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba, T. Kuroiwa

    Jpn. J. Appl. Phys.　36　(2A)　273-275　1997

  537. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs Peer-reviewed

    H Ohno, A Shen, F Matsukura, A Oiwa, A Endo, S Katsumoto, Y Iye

    APPLIED PHYSICS LETTERS　69　(3)　363-365　1996/07

    DOI： 10.1063/1.118061 　

    ISSN： 0003-6951

  538. Ferromagnetic order in(Ga, Mn)As/GaAs heterostructures. Peer-reviewed

    H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

    Proc. 23rd. Int. Conf. Physics of Semiconductors　405-408　1996

  539. Mn-based III-V diluted magnetic(semimagnetic) semiconductors Peer-reviewed

    H. Ohno

    Materials Science Forum　(182-184)　443　1995

  540. Growth of GaAs by molecular-beam epitaxy using trisdinethylaminoarsine Peer-reviewed

    S. Goto, Y. Nomura, Y. Morishita, Y. Katayama, H. Ohno

    J.Crystal Growth　143　1995

    DOI： 10.1016/0022-0248(95)00031-3 　

  541. Temperature dependence of anomalous Hall effect and magnetism of (In, Mn)Asl(Al,Ga)Sb heterostructures

    H. Ohno, F. Matsukura, H. Munekata, Y. Iye, J. Nakahara

    Proc.22nd Int.Conf.Physics of Semiconductors　2605　1995

  542. Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium Peer-reviewed

    H. Ohno, S. Goto, Y. Nomura, Y. Morishita, Y. Katayama

    Applied Surface Science　82-83　(C)　164-170　1994/12/02

    DOI： 10.1016/0169-4332(94)90213-5 　

    ISSN： 0169-4332

  543. MINIMUM LIGHT POWER FOR OPTICAL INTERCONNECTION IN INTEGRATED-CIRCUITS Peer-reviewed

    H OHNO

    OPTOELECTRONICS-DEVICES AND TECHNOLOGIES　9　(1)　131-136　1994/03

    ISSN： 0912-5434

  544. ADSORPTION OF CARBON-RELATED SPECIES ONTO GAAS(001), (011), AND (111) SURFACES EXPOSED TO TRIMETHYLGALLIUM Peer-reviewed

    S GOTO, H OHNO, Y NOMURA, Y MORISHITA, Y KATAYAMA

    JOURNAL OF CRYSTAL GROWTH　136　(1-4)　104-108　1994/03

    DOI： 10.1016/0022-0248(94)90391-3 　

    ISSN： 0022-0248

  545. Inter-subbard population inversion in tunneling heterostructures Peer-reviewed

    H. Ohno

    Transactions of the Materials Research Society of Japan　19A　47　1994

  546. トリメチルガリウムを用いたGaAsの原子層エピタキシと表面カイネティクス Peer-reviewed

    大野英男

    日本結晶成長学会誌　21　(1)　24-31　1994

    DOI： 10.19009/jjacg.21.1_24 　

  547. DILUTED MAGNETIC III-V SEMICONDUCTORS AND ITS TRANSPORT-PROPERTIES Peer-reviewed

    H OHNO

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　32　(Suppl.32-2)　459-461　1993

    ISSN： 0021-4922

  548. In situ Auger electron spectroscopy of carbon transient behavior on GaAs surfaces exposed to trimethylgallium Peer-reviewed

    S. Goto, H. Ohno, Y. Nomura, Y. Morishita, A. Watanabe, Y. Katayama

    Journal of Crystal Growth　127,1005-1009　1993

    DOI： 10.1016/0022-0248(93)90777-T 　

  549. Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium Peer-reviewed

    H. Ohno, S. Goto, Y. Nomura, Y. Morishita, A. Watanabe, Y. Katayama

    Applied Physics Letters　62　(18)　2248　1993

    DOI： 10.1063/1.109635 　

  550. Partial ferromagnetic order in p-type(In, Mn)As diluted magnetic III-V semiconductors Peer-reviewed

    H. Ohno, H. Munekata, T. Penney, S. von Moln, L.L. Chang

    Material Science Forum　117-118,297-302　1993

  551. Optoelectronic devices based on type II polytype tunnel heterostructures Peer-reviewed

    H. Ohno, L. Esaki, E.E. Mendez

    Applied Physics Letters　60　(25)　1992

    DOI： 10.1063/1.106726 　

  552. Magnetotransport properties of p-type(In, Mn)As diluted magnetic III-V semiconductors Peer-reviewed

    H. Ohno, H. Munekata, T. Penney, S. von Moln, L.L. Chang

    Physical Review Letters　68　(16)　2664　1992

    DOI： 10.1103/PhysRevLett.68.2664 　

  553. New diluted magnetic III-V semiconductors Peer-reviewed

    H. Ohno, H. Munekata, S. von Moln, L.L. Chang

    Japanese of Applied Physics　69　(8)　6103　1991

    DOI： 10.1063/1.347780 　

  554. Effect of carrier mass differences on the current-voltage characterics of resonant tunneling structures Peer-reviewed

    H. Ohno, E.E. Mendez, W.I. Wang

    Applied Physics Letters　56　(18)　1793　1990

    DOI： 10.1063/1.103102 　

  555. Observation of 'Tamm states' in superlattices Peer-reviewed

    H. Ohno, E.E. Mendez, J.A. Brum, J.M. Hong, F. AgullRueda, L.L. Chang, L. Esaki

    Physical Review Letters　64　(21)　2555　1990

    DOI： 10.1103/PhysRevLett.64.2555 　

  556. Effect of exposure to group III alkyls on compound semiconductor surfaces observed by X-ray photoelectron spectroscopy Peer-reviewed

    H. Ishii, H. Ohno, K. Matsuzaki, H. Hasegawa

    J. Crystal Growth　95　1989

    DOI： 10.1016/0022-0248(89)90365-5 　

  557. Low temperature mobility of two dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures Peer-reviewed

    H. Ohno, J.K. Luo, K. Matsuzaki, H. Hasegawa

    Appl. Phys. Lett.　54　(1)　1989

    DOI： 10.1063/1.100826 　

  558. Absence of growth sequence dependence of AlAs/GaAs heterojunction band discontinuity determined by X-ray photoelection spectroscopy Peer-reviewed

    H. Ohno, H. Ishii, K. Matsuzaki, H. Hasegawa

    J Crystal Growth　95　1989

    DOI： 10.1016/0022-0248(89)90420-X 　

  559. Quantum Hall effect of two dimensional electron gas in AlyGa1-yAs/Ga1-xInxAs/GaAs pseudomorphic structures Peer-reviewed

    J. K. Luo, H. Ohno, K. Matsuzaki, H. Hasegawa

    J. Appl Phys　66　(9)　1989

    DOI： 10.1063/1.344473 　

  560. Self-limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by X-ray photoelectron spectroscopy Peer-reviewed

    H. Ohno, H. Ishii, K. Matsuzaki, H. Hasegawa

    Appl Phys Lett　54　(12)　1989

    DOI： 10.1063/1.100776 　

  561. Magnetoconductivity of two-dimensional electron gas in Al0.3Ga0.7As/Ga1-xInx As/GaAs pseudomorphic heterostructure in quantum Hall regime Peer-reviewed

    J. K. Luo, H. Ohno, K. Matsuzaki, T. Umeda, J. Nakahara, H. Hasegawa

    Physical Review B　40　(5)　1989

    DOI： 10.1103/PhysRevB.40.3461 　

  562. Atomic layer epitaxy of GaAs using triethylgallium and arsine Peer-reviewed

    H. Ohno, S. Ohtsuka, H. Ishii, Y. Matsubara, H. Hasegawa

    Applied Physics Letters　54　(20)　1989

    DOI： 10.1063/1.101195 　

  563. Diluted magnetic III-V semiconductors Peer-reviewed

    H. Munekata, H. Ohno, S. von Moln, A. Segmler, L.L. Chang, L. Esaki

    Physical Review Letters　63　(17)　1989

    DOI： 10.1103/PhysRevLett.63.1849 　

  564. Dark current in selectively doped N-AlGaAs/GaAs CCDs Peer-reviewed

    Y. Akatsu, H. Ohno, H. Hasegawa, N. Sano

    Japanese J. Applied Physics　27　(1)　1988

    DOI： 10.1143/JJAP.27.78 　

  565. MBE growth of GaAs/InAs structures on (001)InP by alternating III-V fluxes Peer-reviewed

    R. Katsumi, H. Ohno, H. Ishii, K. Matsuzaki, Y. Akatsu, H. Hasegawa

    J. Vacuum Science and Technology B　B6　(2)　1988

    DOI： 10.1116/1.584405 　

  566. Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE Peer-reviewed

    H. Ohno, S. Ohtsuka, A. Ohuchi, T. Matsubara, H. Hasegawa

    J. Crystal Growth　93　1988

    DOI： 10.1016/0022-0248(88)90550-7 　

  567. Low-field transport properties of two dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures Peer-reviewed

    J.K. Luo, H. Ohno, K. Matsuzaki, H. Hasegawa

    Japanese J. Applied Physics　27　(10)　1988

  568. Effect of a coincident Pb flux during MBE growth on the electrical properties of GaAs Peer-reviewed

    Y. Akatsu, H. Ohno, H. Hasegawa, T. Hashizume

    J. Crystal growth　81　1987

    DOI： 10.1016/0022-0248(87)90411-8 　

  569. Correlation between the location of the interface state minimum at insulator-semiconductor interfaces and Schottky barrier heights Peer-reviewed

    H. Ohno, H. Hasegawa

    Japanese J. Appl Physics　25　(5)　1986

  570. Deep level characterization of AlGaAs and selectively doped N-AlGaAs/GaAs heterojunctions Peer-reviewed

    H. Ohno, Y. Akatsu, T. Hashizume, H. Hasegawa, N. Sano, H. Kato, M. Nakayama

    J. Vacuum Science and Technology B　B3　(4)　1985

    DOI： 10.1116/1.583018 　

  571. Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy Peer-reviewed

    H. Ohno, R. Katsumi, T. Takama, H. Hasegawa

    Japanese J. Appl Physics　24　(9)　1985

    DOI： 10.1143/JJAP.24.L682 　

  572. Mechanism of high gain in GaAs photoconductive detectors under low excitation Peer-reviewed

    N. Matsuo, H. Ohno, H. Hasegawa

    Japanese J. Appl Phys　23　(5)　1984

  573. Free-carrier profile synthesis in MOCVD grown GaAs by 'atomic-plane'doping Peer-reviewed

    H. Ohno, E. Ikeda, H. Hasegawa

    Japanese J. Applied Physics　23　(6)　1984

  574. Planer doping by interrupted MOVPE growth of GaAs Peer-reviewed

    H. Ohno, E. Ikeda, H. Hasegawa

    J. Crystal Growth　68　(1)　1984

    DOI： 10.1016/0022-0248(84)90390-7 　

  575. Monolithic integration of GaAs photoconductive detectors and GaAs MESFETs with distributed coupling to optical fibers Peer-reviewed

    N. Matsuo, H. Ohno, H. Hasegawa

    Japanese J. Appl Plays　23　(8)　1984

  576. Effect of tangential magnetic field on the two-dimensional electron transport in N-AlGaAs/GaAs superlattices and hetero-interfaces Peer-reviewed

    H. Sakaki, H. Ohno, S. Nishi, J.. Yoshino

    Physica　117B&118B　1983

    DOI： 10.1016/0378-4363(83)90629-0 　

  577. Dependence of electron mobility on spacer layer thickness and electron density in modulation doped Ga0.47In0.53As/Al0.48 In0.52 As heterojunction Peer-reviewed

    K. Hsieh, H. Ohno, G. Wicks, L.F. Eastman

    Electronics Letters　19　(5)　1983

    DOI： 10.1049/el:19830112 　

  578. A new GaAs/AlGaAs heterojunction FET with insulated gate structure (MISSFET) Peer-reviewed

    T. Hotta, H. Ohno, H. Sakaki

    Japanese Journal of Applied Physics　21　(2)　L122-L124　1982/06

    DOI： 10.1143/JJAP.21.L122 　

  579. Transport properties of electrons at n-AlGaAs/GaAs heterojunction interface and their dependence on GaAs buffer-layer thickness and substrates Peer-reviewed

    Y. Sekiguchi, H. Sakaki, T. Tanoue, T. Hotta, H. Ohno

    Collected Papers of MBE-CST-2　139-142　1982/06

  580. OPTICAL-QUALITY GAINAS GROWN BY MOLECULAR-BEAM EPITAXY Peer-reviewed

    G WICKS, CEC WOOD, H OHNO, LF EASTMAN

    JOURNAL OF ELECTRONIC MATERIALS　11　(2)　435-440　1982

    DOI： 10.1007/BF02654681 　

    ISSN： 0361-5235

  581. STABILIZATION OF SCHOTTKY-BARRIER PROPERTIES OF SINGLE-CRYSTAL AL/GAAS AND AL/ALGAAS/GAAS CONTACTS PREPARED BY MOLECULAR-BEAM EPITAXY Invited Peer-reviewed

    DC SUN, H SAKAKI, H OHNO, Y SEKIGUCHI, T TANOUE

    INSTITUTE OF PHYSICS CONFERENCE SERIES　63　(63)　311-316　1982

    ISSN： 0951-3248

  582. Tangential magnetoresistance of two-dimensional electron gas at a selectively doped n-GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy Peer-reviewed

    H. Ohno, H. Sakaki

    Appl Phys Lett　40　(10)　1982

    DOI： 10.1063/1.92938 　

  583. Characterisation of Al/AlInAs/GaInAs heterostructures Peer-reviewed

    D.V. Morgan, H. Ohno, C.E.C. Wood, W.J. Schaff, K. Board, L.F. Eastman

    IEEE Proceedings　128　(4)　141-143　1981/09

  584. Schottky-barrier properties of nearly-ideal (n=1) Al contact on MBE-and heat cleaned-GaAs surfaces Peer-reviewed

    H. Sakaki, Y. Sekiguchi, D.C. Sun, M. Taniguchi, H. Ohno, A. Tanaka

    Japanese Journal of Applied Physics　20　(2)　L107-L110　1981/09

  585. ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS Peer-reviewed

    CEC WOOD, L RATHBUN, H OHNO, D DESIMONE

    JOURNAL OF CRYSTAL GROWTH　51　(2)　299-303　1981

    DOI： 10.1016/0022-0248(81)90314-6 　

    ISSN： 0022-0248

    eISSN： 1873-5002

  586. CHANNELING ANALYSIS OF MBE INALAS-INGAAS INTERFACES Peer-reviewed

    DV MORGAN, CEC WOOD, H OHNO, LF EASTMAN

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY　19　(3)　596-598　1981

    DOI： 10.1116/1.571136 　

    ISSN： 0022-5355

  587. ION-BEAM ANALYSIS OF MOLECULAR-BEAM EPITAXY INALAS-INGAAS LAYER STRUCTURES Peer-reviewed

    DV MORGAN, H OHNO, CEC WOOD, LF EASTMAN, JD BERRY

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY　128　(11)　2419-2424　1981

    DOI： 10.1149/1.2127262 　

    ISSN： 0013-4651

  588. Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control Peer-reviewed

    J. Barnard, H. Ohno, C.E.C. Wood, L.F. Eastman

    IEEE Electron Device Letters　2　(1)　1981

    DOI： 10.1109/EDL.1981.25320 　

  589. High speed photoconductive detectors using GaInAs Peer-reviewed

    J. Gammel, H. Ohno, J.M. Ballantyne

    IEEE J. Quantum Electronics　QE-17　(2)　1981

    DOI： 10.1109/JQE.1981.1071056 　

  590. GaInAs-AlInAs structures grown by molecular beam epitaxy Peer-reviewed

    H. Ohno, C.E.C. Wood, L. Rathbun, D.V. Morgan, G.W. Wicks, L.F. Eastman

    J Appl Phys　52　(6)　1981

    DOI： 10.1063/1.329212 　

  591. Arsenic stabilization of InP substrates for growth of GaxIn1-xAs layers by molecular beam epitaxy Peer-reviewed

    G.J. Davies, R. Heckingbottom, H. Ohno

    Applied Physics Letters　37　(3)　290-293　1980/06

    DOI： 10.1063/1.91910 　

  592. Double heterostructure Ga0.47 In0.53 As MESFET'S by MBE Peer-reviewed

    H. Ohno, J. Barnard, C.E.C. Wood, L.F. Eastman

    IEEE Electron Device Letters　1　(8)　1980

  593. Thermal conversion mechanism in semi-insulating GaAs Peer-reviewed

    H. Ohno, A. Ushirokawa, T. Katoda

    J. Appl Phys　50　(12)　1979

    DOI： 10.1063/1.325921 　

Show all ︎Show first 5

Misc. 34

  1. Thermal fluctuation of the nanomagnet for probabilistic Bit Invited Peer-reviewed

    Shun Kanai, Shunsuke Fukami, Hideo Ohno

    78　(5)　256-261　2023/05

    DOI： 10.11316/butsuri.78.5_256 　

  2. Coherent antiferromagnetic spintronics

    Jiahao Han, Ran Cheng, Luqiao Liu, Hideo Ohno, Shunsuke Fukami

    Nature Materials　2023

    DOI： 10.1038/s41563-023-01492-6 　

    ISSN： 1476-1122

    eISSN： 1476-4660

  3. Analog spintronics devices and its application to artificial neural networks

    117　(247)　7-12　2017/10/19

    Publisher: 電子情報通信学会

    ISSN： 0913-5685

  4. Analog spintronics devices and its application to artificial neural networks

    41　(34)　7-12　2017/10

    Publisher: 映像情報メディア学会

    ISSN： 1342-6893

  5. Spintronics Materials and Devices for Working Memory Technology FOREWORD

    Hideo Ohno, Masafumi Yamamoto, Tetsuo Endoh, Yasuo Ando, Takahiro Hanyu, Kohei M. Itoh, Masaaki Tanaka, Seiji Mitani, Hitoshi Wakabayashi

    JAPANESE JOURNAL OF APPLIED PHYSICS　56　(8)　2017/08

    DOI： 10.7567/JJAP.56.080201 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  6. C-12-1 Memory design technologies for large scale spin-transfer torque RAM

    Takemura Riichiro, Kawahara Takayuki, Ohno Hideo

    Proceedings of the Society Conference of IEICE　2014　(2)　53-53　2014/09/09

    Publisher: The Institute of Electronics, Information and Communication Engineers

  7. Influence of spin Hall effect for current-induced domain wall motion in a perpendicularly magnetized Co/Ni nanowire

    Yoshimura Y., Koyama T., Moriyama T., Kim Kab-Jin, Chiba D., Nakatani Y., Fukami S., Yamanouchi M., Ohno H., Ono T.

    Meeting abstracts of the Physical Society of Japan　68　(2)　415-415　2013/08/26

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  8. High-speed and reliable domain wall motion device: Material design for embedded memory and logic application

    S. Fukami, M. Yamanouchi, T. Koyama, K. Ueda, Y. Yoshimura, K. J. Kim, D. Chiba, D. Chiba, H. Honjo, N. Sakimura, R. Nebashi, Y. Kato, Y. Tsuji, A. Morioka, K. Kinoshita, S. Miura, T. Suzuki, H. Tanigawa, S. Ikeda, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, H. Ohno, H. Ohno

    Digest of Technical Papers - Symposium on VLSI Technology　61-62　2012/09/27

    DOI： 10.1109/VLSIT.2012.6242461 　

    ISSN： 0743-1562

  9. Trends and Multi-Level-Cell Technology of Spin Transfer Torque Memory

    ISHIGAKI Takashi, KAWAHARA Takayuki, TAKEMURA Riichiro, ONO Kazuo, ITO Kenchi, OHNO Hideo

    IEICE technical report　111　(6)　1-5　2011/04/11

    Publisher: The Institute of Electronics, Information and Communication Engineers

    ISSN： 0913-5685

    More details Close

    A MLC (Multi-level cell) SPRAM (Spin transfer torque RAM) with series-stacked MTJs (Magnetic tunnel junctions) was developed. We demonstrate the successful four-level operation, which means two-bits/cell. It is shown that areas of the two-MTJs are required to be different. In addition, two-step write and read techniques for memory operation are also proposed. Moreover, the design of the cell size is discussed.

  10. Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array

    SUZUKI Daisuke, NATSUI Masanori, IKEDA Shoji, HASEGAWA Haruhiro, MIURA Katsuya, HAYAKAWA Jun, ENDOH Tetsuo, OHNO Hideo, HANYU Takahiro

    IEICE technical report　110　(9)　47-52　2010/04/15

    Publisher: The Institute of Electronics, Information and Communication Engineers

    ISSN： 0913-5685

    More details Close

    This paper presents a nonvolatile LUT (Lookup-Table) circuit in FPGA (Field-Programmable Gate Array) using a MTJ (Magnetic Tunnel Junction) device-based logic technology. To utilize a capability of MTJ devices, the combinational logic circuitry is implemented based on differential current-mode logic methodology. Since the circuit performs current-mode logic operations under low voltage swing, the variation of current flows through MTJ devices can be applied as logic signals directly with no signal amplification. It results in a compact circuit implementation. The proposed LUT circuit fabricated by a 0.14μm CMOS/MTJ-hybrid process achieves area reduction by 2/3 compared to a conventional SRAM-based one, and complete elimination of standby power dissipation.

  11. Current-Induced Domain Wall Motion in Ferromagnetic Semiconductor Structures

    CHIBA D., YAMANOUCHI M., MATSUKURA F., OHNO H.

    Magnetics Japan　4　(8)　390-395　2009/08/01

    Publisher: 日本磁気学会

    ISSN： 1880-7208

  12. 22aWB-7 Domain Wall Creep Motion in a Ferromagnetic Semiconductor (Ga,Mn)As (Experiment)

    Matsukura F., Yamanouchi M., Ohno H.

    Meeting abstracts of the Physical Society of Japan　62　(2)　452-452　2007/08/21

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  13. SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion

    MIURA Katsuya, KAWAHARA Takayuki, TAKEMURA Riichiro, HAYAKAWA Jun, YAMANOUCHI Michihiko, IKEDA Shoji, SASAKI Ryutaro, ITO Kenchi, TAKAHASHI Hiromasa, MATSUOKA Hideyuki, OHNO Hideo

    IEICE technical report　107　(194)　135-138　2007/08/16

    Publisher: The Institute of Electronics, Information and Communication Engineers

    ISSN： 0913-5685

    More details Close

    SPin-transfer torque RAM(SPRAM) with MgO-barrier-based magnetic tunnel junctions (MTJs) is a promising candidate for a future universal memory due to its non-volatility, high-speed operation and low power consumption. The read disturbance and the write-current dispersion of an MTJ could be suppressed by adopting a free layer with high thermal stability. We found that SPRAM with SyF free layer demonstrates the secure reading and writing and achieves the high-speed reading faster than 1.5ns.

  14. 強磁性半導体における磁壁と伝導

    千葉大地, 山之内路彦, 松倉文礼, T. Dietl, 大野英男

    固体物理　42　(2)　99-106　2007/02

    Publisher: アグネ技術センタ-

    ISSN： 0454-4544

    More details Close

    通研インポート200703

  15. Electric-field control of ferromagnetism in (Ga,Mn)As and (In,Mn)As

    CHIBA D., MATSUKURA F., OHNO H.

    150　29-34　2006/10/18

    ISSN： 1340-7562

  16. Electrical magnetization reversal in ferromagnetic III-V semiconductors

    D. Chiba, F. Matsukura, H. Ohno

    JOURNAL OF PHYSICS D-APPLIED PHYSICS　39　(13)　R215-R225　2006/07

    DOI： 10.1088/0022-3727/39/13/R01 　

    ISSN： 0022-3727

  17. Influence of doping concentration in injection layers on the laser characteristics of InAs/AlSb quantum cascade lasers

    OHNISHI Hidekazu, MORIYASU Yoshitaka, OHTANI Keita, OHNO Hideo

    IEICE technical report　105　(629)　49-52　2006/02/23

    Publisher: The Institute of Electronics, Information and Communication Engineers

    ISSN： 0913-5685

    More details Close

    Influence of doping concentration in the injection layers of InAs/AlSb quantum cascade lasers on the operation is investigated. From electroluminescence measurements increasing quasi-Fermi level in the injection layers decreases the operating electric field, which results in the suppression of high electric field effect such as Zener tunneling and impact ionization. Also we study its influence on the temperature dependence of laser characteristics.

  18. Current Induced Magnetization Switching in (Ga, Mn)As MTJs

    CHIBA D., KITA T., YAMANOUCHI M., MATSUKURA F., OHNO H.

    145　7-12　2006/01/30

    ISSN： 1340-7562

  19. Current Induced Magnetization Reversal in Ferromagnetic Semiconductor Tunnel Junctions

    CHIBA D., MATSUKURA F., OHNO H.

    Journal of Magnetics Society of Japan　29　(5)　514-522　2005/05/01

    Publisher: 日本応用磁気学会

    ISSN： 0285-0192

    More details Close

    Electrical magnetization reversal in the absence of magnetic fields is attracting great interest on account of its potential the application to high-density magnetic memories. Experimental confirmations of the theoretical predictions of current-driven magnetization reversal due to spin-transfer torque exerted by spinpolarized currents have mostly been carried out on metal CPP-GMR structures. The critical current density J_c required for magnetization reversal in these systems is of the order of 10^7 A/cm^2 or even higher, and its reduction is a current focus of research. In this article, we demonstrate current-driven magnetization reversal in a ferromagnetic semiconductor system, a (Ga, Mn)As/GaAs/(Ga, Mn)As magnetic tunnel junction (MTJ), at J_c=1-2×10^5 A/cm^2. The basic properties of (Ga, Mn)As itself and its MTJ are also described.

  20. 27aYP-5 Current induced domain wall propagation in a ferromagnetic semiconductor structure fabricated by patterning of coercive force

    Yamanouchi Michihiko, Chiba Daichi, Matsukura Fumihiro, Ohno Yuzo, Ohno Hideo

    Meeting abstracts of the Physical Society of Japan　60　(1)　481-481　2005/03/04

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  21. 27pXJ-7 Spin injection into semiconductors

    Kohda M, Ohno Y, Matsukura F, Ohno H

    Meeting abstracts of the Physical Society of Japan　59　(1)　465-465　2004/03/03

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  22. Fabrication of III-V ferromagnetic semiconductors and their heterostructures

    Matsukura F., Chiba D., Takamura K., Ohno H.

    Meeting abstracts of the Physical Society of Japan　58　(1)　464-464　2003/03/06

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  23. Electrical electron spin injection with a p(+)-(Ga,Mn)As/n(+)-GaAs tunnel junction

    M Kohda, Y Ohno, K Takamura, F Matsukura, H Ohno

    JOURNAL OF SUPERCONDUCTIVITY　16　(1)　167-170　2003/02

    DOI： 10.1023/A:1023282012059 　

    ISSN： 0896-1107

  24. Spin injection into non-magnetic semiconductors using ferromagnetic semiconductor

    Ohno Y., Kohta M., Takamura K., Matsukura F., Ohno H.

    Meeting abstracts of the Physical Society of Japan　57　(2)　576-576　2002/08/13

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  25. Spin Injection in Ferromagnetic/Nonmagnetic Semiconductor Heterostructures

    OHNO Y., OHNO H.

    Journal of Magnetics Society of Japan　25　(7)　1355-1360　2001/07/01

    Publisher: 日本応用磁気学会

    ISSN： 0285-0192

    More details Close

    Injection and probing of spin-polarized currents in ferromagnetic/nonmagnetic semiconductor pn junctions are reviewed. A ferromagnetic p-type semiconductor (Ga, Mn)As layer, which produces a spinpolarized hole current, is grown on i-GaAs/i-(In, Ga)As quantum well (QW)/n-GaAs to form pn junction light emitting diode structures. The electroluminescence spectra and their polarization are measured at temperatures from 5 K to above the ferromagnetic transition temperature (T_c) of (Ga, Mn)As with or without magnetic fields. The EL polarization as a function of the magnetic field exhibits clear hysteresis below T_c, which is considered to be evidence that a spin-polarized electrical current is injected into nonmagnetic semiconductors.

  26. Magnetic field dependence of FIR absorption spectrum in diluted magnetic semiconductor GaMnAs

    Nagai Y., Nagasaka K., Nojiri H., Motokawa M., Matsukura F., Ohno H.

    Meeting abstracts of the Physical Society of Japan　56　(1)　607-607　2001/03/09

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  27. 半導体スピントロニクス素子・材料のスピン制御 (強誘電体メモリとスピントロニクス素子)

    大野 裕三, 大野 英男

    FEDジャ-ナル　12　(2)　29-32　2001

    Publisher: 新機能素子研究開発協会

    ISSN： 0918-2772

  28. Spin-Polarized Light Emitting Diodes of Ferromagnetic/Nonmagnetic Semiconductor p-n Junctions

    OHNO Yuzo, OHNO Hideo

    Japanese journal of optics　29　(12)　734-739　2000/12/10

    Publisher: 応用物理学会分科会日本光学会

    ISSN： 0389-6625

  29. Temperature dependence of far infrared absorption spectra in diluted magnetic semiconducdor GaMnAs II

    Nagai Y., Nagasaka K., Nojiri H., Motokawa M., Matsukura F., Ohno H.

    Meeting abstracts of the Physical Society of Japan　55　(1)　562-562　2000/03/10

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  30. 24aC-8 Temperature Dependence of far infrared absorption spectra in diluted magnetic semiconducdor GaMnAs

    Nagai Y, Nagasaka H, Nojiri M, Motokawa M, Matsukura F, Ohno H

    Meeting abstracts of the Physical Society of Japan　54　(2)　588-588　1999/09/03

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  31. 24aC-3 Magntic domain structures of dihited magnetic semi-conductor(Ga, Mn)As

    Shono T, Fukumura T, Matsukura H, Ohno H, Hasegawa T

    Meeting abstracts of the Physical Society of Japan　54　(2)　587-587　1999/09/03

    Publisher: The Physical Society of Japan (JPS)

    ISSN： 1342-8349

  32. k・p摂動法による(Ga,Mn)Asバンド構造の計算

    秋葉教充, 松倉文礼, 大野裕三, DIETL T, 大野英男

    応用物理学会学術講演会講演予稿集　60th　(3)　1999

  33. Properties of Ferromagnetic Semiconductor (Ga,Mn)As and Its Heterostructures.

    大野英男, 大野裕三, WANG S, 秋葉教充, 岸本修也, 寺内亮太, 安達太郎, 大宮忠志, 中田健一

    スピン制御による半導体超構造の新展開 平成10年度研究成果報告書 スピン制御半導体 研究成果報告会論文集　1999

  34. Galvanomagnetic effect of III - V group dilute magnetic semiconductor (In,Mn)As.

    大岩顕, 家泰弘, 勝本信吾, 遠藤彰, 大野英男, 宗片比呂夫

    物性研だより　35　(3)　1995

    ISSN： 0385-9843

Show all ︎Show first 5

Books and Other Publications 11

  1. 半導体ストレージ2012

    羽生貴弘, 池田正二, 杉林直彦, 笠井直記, 遠藤哲郎, 大野英男

    日経BP社　2011/07/29

  2. Semiconductors and Semimetals, (Spintronics)

    T. Dietl, D. Awschalom, M. Kaminska, H. Ohno

    Elsevier Academic Press　2008/11

  3. Semiconductors and Semimetals (Spintronics)

    T. Dietl, D. Awschalom, M. Kaminska, H. Ohno

    Elsevier Academic Press　2008/10

    ISBN: 9780080449562

  4. Surface kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

    H. Ohno

    1997

  5. 物性科学辞典(分担執筆)

    大野英男

    1996

  6. III-V族化合物半導体

    大野英男

    1994

  7. 先端デバイス材料ハンドブック

    大野英男

    1993

  8. 薄膜作成ハンドブック

    大野英男

    1991

  9. 超高速化合物半導体デバイス

    大野英男

    1986

  10. 化合物半導体デバイス

    生駒俊明, 大野英男

    1984

  11. Field-effect transistors

    H. Ohno, J. Barnard

    1982

Show all Show first 5

Presentations 829

  1. Realizing the Potential of Spintronics: From Physics to Technology Invited

    H. Ohno

    Quantum Flatlands and Allan Fest: New Materials, Innovative Devices, and Emergence Principles　2024/12/09

  2. Spintronics Nonvolatile Memory – A metal/insulator heterostructure– Invited

    H. Ohno

    15th Topical Workshop on Heterostructure Microelectronics (TWHM)　2024/08/26

  3. Spintronics: A Green Revolution in Information Processing Invited

    H. Ohno

    22nd International Conference on Magnetism (ICM)　2024/06/30

  4. Spintronics for Green Society and Beyond Invited

    H. Ohno

    7th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE)　2022/11/06

  5. Volatile Spintronics Invited

    H. Ohno

    Spin Dynamics at the Nanoscale and its Applications　2022/09/23

  6. Spintronics for Green Society Invited

    H. Ohno

    2022 Joint European Magnetic Symposia (JEMS)　2022/07/24

  7. Spintronics-based Approaches toward Unconventional Computing Invited

    H. Ohno

    Advanced Research Strategy Meeting (ARSM)　2022/02/08

  8. Magnetic Tuunel Junction: from nonvolatile Memory to probabilistic Computing Invited

    H. Ohno

    W2S Seminar　2021/10/28

  9. Spintronics Gateway to Green Society –For smarter, longer, and less - Invited

    H. Ohno

    World Materials Forum (online)　2021/06/19

  10. Spintronics a Gateway to Green Society Invited

    H. Ohno

    2021 Spintronics Workshop on LSI (online)　2021/06/13

  11. What Spintronics Tells You About Future Information Processing Invited

    H. Ohno

    NSF Future of Semiconductors and Beyond Workshop, Materials, Devices, and Integration (online)　2021/03/02

  12. Spintronics nanodevice – From SMALL to SMART Invited

    H. Ohno

    6th International Conference on Nanoscience and Nanotechnology (ICONN 2021) (online)　2021/02/01

  13. Spintronics Nanodevice – How small can we make it and what else can we use it for Invited

    H. Ohno

    On-line SPICE-SPIN+X Seminars (online)　2020/09/20

  14. Spintronics Device – Scaling to Single Digit nm and More Invited

    H. Ohno

    78th Device Research Conference (DRC) (online)　2020/06/22

  15. Nano Spintronics Devices –From Digital to Bio-inspired Computing- International-presentation

    International Symposium for Bio-Convergence Spin System　2017/02/09

  16. Nano Spintronics Devices for Integrated Circuit Applications International-presentation

    International Conference on Magnetic Materials and Applications (ICMAGMA-2917)　2017/02/01

  17. Spin on Integrated Circuits: An Emerging Feld of Spintronics International-presentation

    Conference on 90 Years of Quantum Mechanics　2017/01/23

  18. High-speed & external-magnetic-field free spin-orbit switching devices for VLSI International-presentation

    8th MRAM Global Innovation Forum　2016/10/26

  19. Two-and three terminal spintronics devices for VLSI-progress in spin-orbit-torque devices International-presentation

    Nanomaterials 2016, International Workshop and School on Spin Transfer　2016/09/23

  20. Spin-orbit switching of magnetization International-presentation

    2nd Marie Curie School on Domain Walls and Spintronics　2016/09/12

  21. Spintronics devices for nonvolatile VLSI

    40th Annual Conference on Magnetics in Japan　2016/09/05

  22. Nanoscale Spintronics Devices International-presentation

    16th International Conference on Nanotechnology (IEEE NANO)　2016/08/22

  23. Spintronics Nano-Devices for VLSI Integration International-presentation

    8th Joint European Magnetics Symposium (JEMS2016)　2016/08/21

  24. Spintronics Nano-Devices for VLSIs Applications International-presentation

    20th Int. Vacuum Congress (IVC-20)　2016/08/21

  25. Three-Terminal Spintronics Devices for CMOS Integration International-presentation

    The 4th International Conference of Asian Union of Magnetics Societies (ICAUMS 2016)　2016/08/01

  26. Spintronics I International-presentation

    IEEE Magnetic Society Summer School　2016/07/10

  27. Spintronics II International-presentation

    IEEE Magnetic Society Summer School　2016/07/10

  28. Three-Terminal Spintronics Devices for VLSI International-presentation

    International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM 2016)　2016/07/04

  29. Spintronics nano-devices for VLSIs International-presentation

    Nothwestern University Materials Science and Engineering Seminar　2016/06/30

  30. Spin-orbit torque switching of magnetization International-presentation

    University of Chicago IME Seminar　2016/06/28

  31. Matreial Efficiency: The case of devices for IoT International-presentation

    World Materials Forum　2016/06/09

  32. Nano spintronics devices for CMOS integration International-presentation

    5th International Conference Smart and Multifunctional Materials, Structures and Systems (CIMTEC)　2016/06/05

  33. Spintronics nano-devices for VLSIs International-presentation

    5th International Conference on Superconductivity and Magnetism (ICSM)　2016/04/24

  34. Efficiency of spintronics nanodevices International-presentation

    Spintronics Meeting in Lanna　2016/03/30

  35. 垂直磁気異方性CoFeB-MgO磁気トンネル接合の高速中性子耐性評価(III)

    成田克, 高橋豊, 原田正英, 大井元貴, 及川健一, 小林大輔, 廣瀬和之, 佐藤英夫, 池田正二, 遠藤哲郎

    第63回応用物理学会春季学術講演会、　2016/03/19

  36. Electric-field effect on domain structure in MgO/CoFeB/Ta

    T. Dohi, S. Kanai, A. Okada, S. Fukami, F. Matsukura

    第63回応用物理学会春季学術講演会、　2016/03/19

  37. Spin-orbit torque induced magnetization switching in W/CoFeB/MgO

    C. Zhang, S. Fukami, S. DuttaGupta, H. Sato, F. Matsukura

    第63回応用物理学会春季学術講演会、　2016/03/19

  38. Dot size dependence of magnetization switching by spin-orbit torque in antiferromagnet/ferromagnet structures

    A. Kurenkov, C. Zhang, S. Fukami, S. DuttaGupta

    第63回応用物理学会春季学術講演会、　2016/03/19

  39. スピントロニクス最前線-集積回路応用を中心に

    電子デバイス界面テクノロジー研究会　2016/01/22

  40. Control of the skyrmion structure in a nano disk by electric field pulses at room temperature International-presentation

    Y. Nakatani, S. Kanai, S. Fukami, M. Hayashi

    13th Joint MMM-Intermag Conference　2016/01/11

  41. Current induced magnetization switching of CoFeB/Ta/[Co/Pd(Pt)]-multilayer in magnetic tunnel junctions with perpendicular anisotropy International-presentation

    S. Ishikawa, H. Sato, S. Fukami, F. Matsukura

    13th Joint MMM-Intermag Conference　2016/01/11

  42. Electric field control of magnetism and magnetization switching in CoFeB-MgO International-presentation

    S. Kanai, Y. Nakatani, H. Sato, F. Matsukura

    13th Joint MMM-Intermag Conference　2016/01/11

  43. Optimum boron composition difference between single and double CoFeB/MgO interface perpendicular magnetic tunnel junctions (MTJs) with high thermal tolerance and its mechanism International-presentation

    H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanabe, S. Miura, T. Natsuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, T. Endoh

    13th Joint MMM-Intermag Conference　2016/01/11

  44. Dependence of magnetic properties of CoFeB-MgO on buffer layer materials International-presentation

    K. Watanabe, H. Sato, S. Fukami, F. Matsukura

    13th Joint MMM-Intermag Conference　2016/01/11

  45. 強磁性体の電界制御とその記録素子応用

    金井駿, 仲谷栄伸, 岡田篤, 佐藤英夫, 松倉文礼

    第20回スピン工学の基礎と応用（PASPS-20）　2015/12/03

  46. Ta/CoFeB/MgO構造における磁気異方性とダンピング定数の電気的制御 International-presentation

    岡田篤, 橋本祥斉, 金井駿, 松倉文礼

    第20回スピン工学の基礎と応用（PASPS-20）　2015/12/03

  47. Magnetization Switching in Ta/CoFeB/MgO Nanodot Driven by Spin-Orbit Torque

    C. Zhang, S. Fukami, H. Sato, F. Matsukura

    第20回スピン工学の基礎と応用（PASPS-20）　2015/12/03

  48. CoFeB/MgO垂直磁化容易磁気トンネル接合における電界誘起非線形強磁性共鳴

    平山絵里子, 金井駿, 大江純一郎, 佐藤英夫, 松倉文礼

    第20回スピン工学の基礎と応用（PASPS-20）　2015/12/03

  49. Perpendicular Anisotropy and Damping Constant of Single and Double CoFeB-MgO Interface Structures with Various CoFeB Thicknesses

    E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura

    第20回スピン工学の基礎と応用（PASPS-20）　2015/12/03

  50. (Ga,Mn)As:Liの面内異方性磁気抵抗効果の温度依存性

    都澤章平, 陳林, 松倉文礼

    第20回スピン工学の基礎と応用（PASPS-20）　2015/12/03

  51. Spi-Orbit Torque Switching for Three-Terminal Spintronics Devices International-presentation

    S. Fukami, C. Zhang, S. DuttaGupta, A. Kurenkov

    13th RIEC International Workshop on Spintronics　2015/11/18

  52. Different Universality Classes for Current and Field Driven Domain Wall Creep in a Magnetic Metal International-presentation

    S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura

    13th RIEC International Workshop on Spintronics　2015/11/18

  53. Layer Thicknesses and Annealing Condition Dependence of Magnetic Properties of CoFeB-MgO Structure International-presentation

    K. Watanabe, H. Sato, S. Fukami, F. Matsukura

    13th RIEC International Workshop on Spintronics　2015/11/18

  54. Temperature Dependence of Magnetotransport Properties in (Ga,Mn)As: Li International-presentation

    S. Miyakozawa, L. Chan, F. Matsukura

    13th RIEC International Workshop on Spintronics　2015/11/18

  55. Magnetization Switching via Spin-Orbit Torque in Nano-Scale Ta/CoFeB/MgO International-presentation

    C. Zhang, S. Fukami, H. Sato, F. Matsukura

    13th RIEC International Workshop on Spintronics　2015/11/18

  56. A Three-Terminal Spin-Orbit Torque Device with a New Configuration International-presentation

    T. Anekawa, C. Zhang, S. Fukami

    13th RIEC International Workshop on Spintronics　2015/11/18

  57. Electrical Modulation of Damping Constant in Ta/CoFeB/MgO with Perpendicular Easy Axis International-presentation

    A. Okada, Y. Hashimoto, S. Kanai, F. Matsukura

    13th RIEC International Workshop on Spintronics　2015/11/18

  58. CoFeB Thickness Dependence of Damping Constant for Single and Double CoFeB-MgO Interface Structures International-presentation

    E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura

    13th RIEC International Workshop on Spintronics　2015/11/18

  59. Spintronics materials and devices for nonvolatile CMOS VLSIs International-presentation

    16th RIES-Hokudai International Symposium　2015/11/10

  60. Improving the Sensitivity of Vector-Network-Analyzer Ferromagnetic Resonance Measurement by Varying the Coplanar Waveguide Size International-presentation

    E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura

    2015 International Conference on Applied Materials and Optical Systems (ICAMOS)　2015/10/22

  61. Spintronics Nano-Devices for Nonvolatile VLSIs International-presentation

    Electronic and Photonics Workshop　2015/10/15

  62. Challenge of MTJ-based Nonvolatile Logic-Memory Architecture for Ultra Low-Power and Highly Dependable VLSI Computing International-presentation

    T. Hanyu, M. Natsui, D. Suzuki, A. Mochizuki, N. Onizawa, S. Ikeda, T. Endoh

    IEEE SOI-3D-Subthreshold Microelectronics Technology Unifield Conference　2015/10/05

  63. Properties of Perpendicular-Anistropy Magnetic Tunnel Junctions with Single and Double CoFeB-MgO Interface International-presentation

    H. Sato, E. C. I, Enobio, S. Fukami, F. Matsukura

    6th Annual Conference on Magnetics　2015/10/02

  64. Nonvolatile VLSI Made Possible by Spintronics International-presentation

    4th Winton Symposium　2015/09/28

  65. Optimization of CoFeB Capping Layer Thickness for Characterization of Leakage Spot in MgO Tunneling Barrier of Magnetic Tunnel Junction International-presentation

    H. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, M. Niwa

    2015 International Conference on Solid State Devices and Materials (SSDM)　2015/09/27

  66. A600-μ W Ultroa-Low-Power Associative Processor for Image Pattern Recognition Employing Magnetic Tunnel Junction (MTJ) Based Nonvolatile Memories with Novel Intelligent Power-Gating (|IPG) Scheme International-presentation

    Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, T. Shibata, T. Endoh

    2015 International Conference on Solid State Devices and Materials (SSDM)　2015/09/27

  67. Spintronics Memory Devices for Ultralow-Power and High-performance Integrated Circuits International-presentation

    S. Fukami, H. Sato

    2015 International Conference on Solid State Devices and Materials (SSDM)　2015/09/27

  68. Spintronics Nano-Devices for Nonvolatile VLSIs International-presentation

    12th Sweden-Japan QNANO Workshop　2015/09/24

  69. Wire Width Depencence of Current-Induced Domain Wall Motion Properties

    T. Iwabuchi, S. Fukami

    第76回応用物理学会秋季学術講演会　2015/09/13

  70. Pulse Width Dependence of a Spin-Orbit Torque Induced Magnetization Switching

    T. Anekawa, C. Zhang, S. Fukami

    第76回応用物理学会秋季学術講演会　2015/09/13

  71. In-Plane Aspect Ratio Dependence of Thermal Stability and Intrinsic Critical Current in CoFeB/MgO Magnetic Tunnel Junctions with Perpendicular Anisotropy

    E. Hirayama, S. Kanai, H. Sato, F. Matsukura

    第76回応用物理学会秋季学術講演会　2015/09/13

  72. CoFeB Thickness Dependence of Electric-Field Effects on Magnetic Anistropy and Damping Constant in Ta/CoFeB/MgO Structures

    A. Okada, Y. Hashimoto, S. Kanai, F. Matsukura

    第76回応用物理学会秋季学術講演会　2015/09/13

  73. Spin-Orbit Torque Induced Switching in an Antiferromgnet/Ferromagnet Heterostructure

    S. Fukami, C. Zhang, S. DuttaGupta

    第76回応用物理学会秋季学術講演会　2015/09/13

  74. Temperature Dependence of In-Plane Anistropic Magnetoresistance in (Ga, Ma)As:Li

    S. Miyakozawa, L. Chen, F. Matsukura

    第76回応用物理学会秋季学術講演会　2015/09/13

  75. Switching Characteristics of CoFeB-MgO Magnetic Tunnel Junctions in the ns Reqime

    N. Ohshima, S. Kubota, H. Sato, S. Fukami, F. Matsukura

    第76回応用物理学会秋季学術講演会　2015/09/13

  76. Magnetization Reversal Induced by Spin-Orbit Torque in a Nanoscale Ta/CoFeB/MgO Dot

    C. Zhang, S. Fukami, H. Sato, F. Matsukura

    第76回応用物理学会秋季学術講演会　2015/09/13

  77. 垂直磁気異方性CoFeB-MgO磁気トンネル接合の高速中性子耐性評価（II）

    成田克, 高橋豊, 原田正英, 大井元貴, 及川健一, 小林大輔, 廣瀬和之, 石川慎也, E. C. I. Enobio, 佐藤英夫, 池田正二, 遠藤哲郎

    第76回応用物理学会秋季学術講演会　2015/09/13

  78. Spin-Orbit Torque Induced Magnetization Switching for Three-Terminal Spintronics Devices International-presentation

    S. Fukami

    2nd Spin Waves and Interactions　2015/09/09

  79. dc-bias Depencence of Ferromagnetic Resonance Spectra of a CoFeB-MgO based Magnetic Tunnel Junction International-presentation

    S. Kanai, M. Gajek, D. C. Worledge, F. Matsukura

    International School and Conference (SPINTECH VIII)　2015/08/10

  80. Nano-Spintronics Devices for VLSI Integration International-presentation

    Spin Dynamics in Nanostructures, Gordon Research Conference (GRC)　2015/07/26

  81. Effect of Li Codoping on In-Plane Uniaxial Magnetic Anisotropy in (Ga,Mn)As International-presentation

    S. Miyakozawa, L. Chen, F. Matsukura

    21st International Conference on Electronic Properties of Two-Dimensional Systems and 17th International Conference on Modulated Semiconductor Structures, (EP2DS-21/MSS-17)　2015/07/26

  82. 電界による強磁性金属薄膜の磁気特性の変調

    岡田篤

    平成27年度ナノ・スピン実験施設研究発表会　2015/07/23

  83. ナー共添加が強磁性半導体の諸特性に与える影響

    都澤章平

    平成27年度ナノ・スピン実験施設研究発表会　2015/07/23

  84. 磁化ダイナミクスを利用したナノ磁性体の特性評価

    平山絵里子

    平成27年度ナノ・スピン実験施設研究発表会　2015/07/23

  85. Temperature Dependence of Intrinsic Critical Current of CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Easy Axis International-presentation

    Y. Takeuchi, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura

    Internationa Colloquium on Magnetic Films and Survaces (ICMFS)　2015/07/12

  86. Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Wire

    T. Iwabuchi, S. Fukami

    34th Electronic Materials Symposium (EMS)　2015/07/08

  87. Junction Size Dependence of Switching Current in CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Easy Axis

    N. Ohshima, S.Kubota, H. Sato, S. Fukami, F. Matsukura

    34th Electronic Materials Symposium (EMS)　2015/07/08

  88. Building Blocks of Artificial Square Spin Ice: Stray-Field Studies of Thermal Dynamics and Tuned Interactions International-presentation

    M. Pohlit, F. Porrati, M. Huth, Y. Ohno, J. Muller

    20th International Conference on Magnetism (ICM)　2015/07/05

  89. Ultra-High Frequency Tunability in Low-Current and Low-Field Spin Torque Oscillators based on Perpendicular Magnetic Tunnel Junctions International-presentation

    T. Le, A. Eklund, S. Chung, H. Mazraati, A. Nguyen, M. Yamanouchi, E. Enobio, S. Ikeda, J. Akerman

    20th International Conference on Magnetism (ICM)　2015/07/05

  90. Spin-Orbit Torque Switching in a Ferromagnet / Antiferromagnet Bilayer System International-presentation

    S. Fukami, C. Zhang, S. DuttaGupta

    20th International Conference on Magnetism (ICM)　2015/07/05

  91. Spin-Orbit Torque Induced Magnetization Switching in Ta/CoFeB/MgO Heterostructure with a Diameter Down to 30 nm International-presentation

    C. Zhang, S. Fukami, H. Sato, F. Matsukura

    20th International Conference on Magnetism (ICM)　2015/07/05

  92. Spintronics for Stand-by Power Free VLSI International-presentation

    8th International Conference on Materials for Advanced Technologies and 16th IUMRS International Conference in Asia (ICMAT2015-IUMRS-ICA2015)　2015/06/28

  93. Nanoscale Spintronics Materials and Devices International-presentation

    8th International Conference on Materials for Advanced Technologies and 16th IUMRS International Conference in Asia (ICMAT2015-IUMRS-ICA2015)　2015/06/28

  94. Electric-Field Dependence of Magnetic Anisotropy and Damping Constant in Ta/CoFeB/MgO Structures International-presentation

    A. Okada, Y. Hashimoto, S. Kanai, F. Matsukura

    8th International Conference on Materials for Advanced Technologies and 16th IUMRS International Conference in Asia (ICMAT2015-IUMRS-ICA2015)　2015/06/28

  95. Vector Network Analyzer –Ferromagnetic Resonance Measurements on CoFeB-MgO Stack with Perpendicular Easy Axis International-presentation

    E. C. Enobio, H. Sato, S. Fukami, F. Matsukura

    8th International Conference on Materials for Advanced Technologies and 16th IUMRS International Conference in Asia (ICMAT2015-IUMRS-ICA2015)　2015/06/28

  96. Toward Ultra-Low Power Microprocessor Using Spintronics Technology International-presentation

    1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage　2015/06/21

  97. 10nmφ Perpendicular-Anistropy CoFeB-MgO Magnetic Tunnel Junctions with Over 400℃ High Thermal Tolerance by Boron Diffusion Control International-presentation

    H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, T. Endoh

    2015 Symposium on VLSI Technology and Circuits　2015/06/15

  98. Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure International-presentation

    D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, T. Hanyu

    2015 Symposium on VLSI Technology and Circuits　2015/06/15

  99. Properties of CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Easy Axis for Spintronics Based VLSI Applications International-presentation

    H. Sato, Y. Takeuchi, N. Ohshima, S. Kubota, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura

    2015 Spintronics Workshop on LSI　2015/06/15

  100. Nanoscale Magnetic Tunnel Junction International-presentation

    York-Tohoku-Kaiserslautern Symposium on New-Concept Spintronics Devices　2015/06/11

  101. Domain Wall Creep Driven by Adiabatic Spin Transfer Torque in Magnetic Metals International-presentation

    S. DuttaGupta

    York-Tohoku-Kaiserslautern Symposium on New-Concept Spintronics Devices　2015/06/11

  102. 強磁性薄膜における電界効果と磁気ダイナミクス

    金井駿, 仲谷栄伸, 岡田篤, 松倉文礼

    第54回スピントロニクス専門研究会「スピンの電界制御の現状と将来展望」　2015/06/10

  103. Nano-Scale Magnetic Tunnel Junction Materials and Devices –Toward Nonvolatile VLSI- International-presentation

    International Conference on Spin Physics, Spin Chemistry and Spin Technology　2015/06/01

  104. Nanoscale Magnetic Tunnel Junction International-presentation

    5th STT-MRAM Global Innovation Forum　2015/05/27

  105. Spintronic Nano-Devices for Nonvolatile VLSIs International-presentation

    Frontiers in Quantum Materials and Devices Workshop and Tohoku-Harvard Workshop　2015/05/21

  106. Nanoscale Magnetic Tunnel Junction –Materials Science and Device Physics- International-presentation

    Intel Seminar　2015/05/19

  107. Nanoscale Magnetic Tunnel Junction –Materials Science and Device Physics International-presentation

    Intel Seminar　2015/05/19

  108. 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance International-presentation

    H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, M. Muraguchi, M. Niwa, K. Ito, S. Ikeda, T. Endoh

    International Memory Workshop (IMW)　2015/05/17

  109. Proposal and Demonstration of a New Spin-Orbit Torque Induced Switching Device International-presentation

    S. Fukami, T. Anekawa, C. Zhang

    International Magnetic Conference (INTERMAG)　2015/05/11

  110. Three-Terminal Spointronics Memory Devices with Perpendicular Anistropy International-presentation

    S. Fukami

    International Magnetic Conference (INTERMAG)　2015/05/11

  111. Diffusion Behaviors Observed on the Surface of CoFeB Film after the Natural Oxidation and the Annealing International-presentation

    S. Sato, H. Honjo, S. Ikeda, T. Endoh, M. Niwa

    International Magnetic Conference (INTERMAG)　2015/05/11

  112. Diffusion Behaviors Observed on the Surface of CoFeB Film after the Natural Oxidation and the Annealing International-presentation

    S. Sato, H. Honjo, S. Ikeda, T. Endoh, M. Niwa

    International Magnetic Conference (INTERMAG)　2015/05/11

  113. 不揮発ロジックインメモリアーキテクチャとその低電力VLSIシステムへの応用

    羽生貴弘, 鈴木大輔, 望月明, 夏井雅典, 鬼沢直哉, 杉林直彦, 池田正二, 遠藤哲郎

    電子情報通信学会・集積回路研究会　2015/04/17

  114. 磁場および電流によって制御された磁壁発信器

    平松亮, K. K.Jin, 谷口卓也, 東野隆之, 森山貴広, 深見俊輔, 山ノ内路彦, 仲谷栄伸, 小野輝男

    第70回日本物理学会春季年次大会　2015/03/21

  115. Spintronics Devices for Integrated Circuits – An Overview International-presentation

    1st CIES Technology Forum　2015/03/19

  116. 垂直磁気異方性CoFeB-MgO磁気トンネル接合の高速中性子耐性評価

    Narita

    第62回応用物理学会学術講演会　2015/03/11

  117. 新規3端子スピン軌道トルク素子の動作実証

    T. Anekawa

    第62回応用物理学会学術講演会　2015/03/11

  118. 垂直磁気異方性CoFeB-MgO磁気トンネル接合における閾値電流の温度依存性

    Y. Takeuchi

    第62回応用物理学会学術講演会　2015/03/11

  119. dc Bias Voltage Dependence of Magnetic Anisotropy in CoFeB/MgO Investigated by Electric Field-Induced Ferromagnetic Resonance

    S. Kanai

    第62回応用物理学会学術講演会　2015/03/11

  120. Universality Classes for Current-and Field-Induced Domain Wall Creep in a Ta/CoFeB/MgO/Ta Wire

    S. DuttaGupta

    第62回応用物理学会学術講演会　2015/03/11

  121. Device size Dependence of Switching Current for Magnteization Reversal Induced by Spin-Orbit Torque in Ta/CoFeB/MgO Structures Down to 30nm

    C. Zhang

    第62回応用物理学会学術講演会　2015/03/11

  122. Ferromagnetic Resonance Induced Electrical Signals in Pt/(Ga,Mn)As

    H. Nakayama

    第62回応用物理学会学術講演会　2015/03/11

  123. rf Power Dependence of Homodyne-Detected Ferromagnetic Resonance Spectra of a CoFeB/MgO Magnetic Tunnel Junction

    E. Hirayama

    第62回応用物理学会学術講演会　2015/03/11

  124. Temperature Dependent Direction of in-plane Uniaxial Magnetic Anisotropy in (Ga,Mn)As Codoped with Li

    S. Miyakozawa

    第62回応用物理学会学術講演会　2015/03/11

  125. AlInAs/GaInAsから強磁性半導体GaMnAsまで

    第62回応用物理学会学術講演会　2015/03/11

  126. 先端スピントロニクス素子・材料のブレークスルーと評価技術

    SPRUC分野融合型研究ワークショップ「新たな分野融合型研究の開拓に向けて」　2015/02/19

  127. Nanoscale Magnetic Tunnel Junction International-presentation

    Nanyang Technological University Seminar　2014/12/18

  128. 磁気ランダムアクセスメモリ(MRAM)の最新技術動向

    小池洋紀, 池田正二, 羽生貴弘, 大野英男, 遠藤哲郎

    第60回CVD研究会　2014/12/18

  129. 東北大学におけるスピントロニクス

    東北大学電気通信研究所共同プロジェクト研究S「スピントロニクス学術研究基礎と連携ネットワーク構築に向けて」　2014/12/17

  130. Temperature dependence of in-plane magnetic anisotropy in (Ga,Mn)As codoped with Li

    S. Miyakozawa

    19th Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-19)　2014/12/15

  131. DC voltages in Pt/(Ga,Mn)As under ferromagnetic resonance

    H. Nakayama

    19th Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-19)　2014/12/15

  132. Challenge of MOS/MTJ-Hybrid Nonvolatile Logic-in Memory Architecture in Dark-Silicon Era International-presentation

    T. Hanyu

    2014 International Electron Devices Meeting (IEDM)　2014/12/15

  133. Perpendicular-Anisotropy CoFeB-MgO Based Magnetic Tunnel Junctions Scaling Down to 1X nm International-presentation

    S. Ikeda

    2014 International Electron Devices Meeting (IEDM)　2014/12/15

  134. ナノデバイス科学からの放射光への期待

    大野英男, 松倉文礼

    東北大学金属材料研究所共同利用ワークショップ「3GeV中型高輝度放射光(SLiT-J)の実現に向けて」　2014/12/15

  135. Properties of Nanoscale Magnets Investigated by Homodyne-Detected Ferromagnetic Resonance

    E. Hirayama, S. Kanai, H. Sato, F. Matsukura, H. Ohno

    8th High-Tech Research Center Symposium, “New Frontiers in Functional Materials”　2014/12/06

  136. Korea University Special Seminar International-presentation

    Korea University Special Seminar　2014/12/04

  137. 面内磁化容易3端子スピン軌道トルク素子の反転電流

    T. Anekawa

    第69回応用物理学会東北支部学術講演会　2014/12/04

  138. Pt/(Ga,Mn)As構造における強磁性共鳴下の直流電圧信号

    H. Nakayama

    第69回応用物理学会東北支部学術講演会　2014/12/04

  139. MgO/CoFeB/Ta積層膜の磁気特性のCoFeBおよびTa膜厚依存性

    K Watanabe

    第69回応用物理学会東北支部学術講演会　2014/12/04

  140. ize Dependence of Magnetic Properties of Nanoscale CoFeB/MgO Magnetic Tunnel Junctions

    E. Hirayama, S. Kanai, H. Sato, F. Matsukura, H. Ohno

    応用物理学会東北支部大会Student Chapter　2014/12/02

  141. Temperature Dependence of Thermal Stability Factor of CoFeB-MgO Perpendicular-Anisotropy

    Y. Takeuchi, S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    応用物理学会東北支部大会Student Chapter　2014/12/02

  142. Magnetic Tunnel Junctions with CoFeB/Ta/[Co/Pt] Multilayer Ferromagnetic Electode

    S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    応用物理学会東北支部大会Student Chapter　2014/12/02

  143. Nano-scale magnetic tunnel junction for nonvolatile VLSIs International-presentation

    2nd Internaional Symposium on Functionality of Organized Nanostructures 2014 (FON14)　2014/11/26

  144. Spintronics materials and devices for nonvolatile VLSIs International-presentation

    1st International Symposium on Interactive Materials Science Cadet Program (iSIMSC)　2014/11/16

  145. 微細スピントロニクス素子

    平成26年度東北大学電気通信研究所共同プロジェクト研究会「非平衡スピン・ゆらぎの精緻な制御と観測による新規ナノデバイスの開拓研究」　2014/11/13

  146. Domain wall creep in Ta/CoFeB/MgO wire induced by current field International-presentation

    S. DuttaGupta

    59th Annual Magnetism and Magnetic Materials Conference (MMM)　2014/11/03

  147. In-plane magnetic field angle dependence of ferromagnetic resonance frequency in a nanoscale CoFeB-MgO magnetic tunnel junction International-presentation

    E. Hirayama

    59th Annual Magnetism and Magnetic Materials Conference (MMM)　2014/11/03

  148. Device size dependence of magnetization reversal by spin-orbit torque in Ta/CoFeB/MgO structure down to sub 100 nm International-presentation

    C. Zhang

    59th Annual Magnetism and Magnetic Materials Conference (MMM)　2014/11/03

  149. Intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 11 nm International-presentation

    H. Sato

    59th Annual Magnetism and Magnetic Materials Conference (MMM)　2014/11/03

  150. ナノデバイス科学からの期待

    日本学術会議公開シンポジウム「中型高輝度放射光源に期待するこれからの科学技術」　2014/10/31

  151. Spintronics – recent advances International-presentation

    4th imec-Stanford International Workshop on Resistive Memories　2014/10/27

  152. Three-Terminal Nonvolatile Spintronics Memory Device using Spin-Transfer Torque and Spin-Orbit Torque International-presentation

    S. Fukami

    14th Non-Volatile Memory Technology Symposium (NVMTS 2014)　2014/10/27

  153. Three-Terminal Spintronics Devices for Nonvolatile Memory and Logic International-presentation

    S. Fukami

    11th International Conference on Flow Dynamics (ICFD)　2014/10/08

  154. スピントロニクス-電界制御と界面効果を中心に-

    新学術領域「超低速ミュオン顕微鏡が拓く物質・生命・素粒子科学のフロンティア」領域会議　2014/09/23

  155. Spintronic Nano-Devices for Nonvolatile VLSIs International-presentation

    1st University of Chicago/AIMR Joint Research Center Workshop　2014/09/18

  156. Magnetic anisotropy in Ta/CoFeB/MgO investigated by x-ray magnetic circular dichroism and first-principles calculation

    H. Kanai

    第75回応用物理学会秋季学術講演会　2014/09/17

  157. Junction size dependence of intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure

    H. Sato

    第75回応用物理学会秋季学術講演会　2014/09/17

  158. In-plane anisotropy in a CoFeB-MgO magnetic tunnel junction detected by magnetoresistance

    E. Hirayama

    第75回応用物理学会秋季学術講演会　2014/09/17

  159. Modulation of spin precession frequency by spin relaxation anisotropy in a (110) GaAs/AlGaAs quantum wall

    A. Aoki, J. Nitta

    第75回応用物理学会秋季学術講演会　2014/09/17

  160. Thermal stability and critical current for domain wall motion in nanowire

    S. Fukami

    第75回応用物理学会秋季学術講演会　2014/09/17

  161. Device size dependence of magnetization switching by spin-orbit torque in Ta/CoFeB/MgO structure

    C. Zhang

    第75回応用物理学会秋季学術講演会　2014/09/17

  162. Current and field induced domain wall creep in Ta/CoFeB/MgO/Ta wire

    S. DuttaGupta

    第75回応用物理学会秋季学術講演会　2014/09/17

  163. Thermal stability and threshold current of nanoscale magnetic tunnel junctions International-presentation

    International Workshop on Nanomaterials (M-SNOWS)　2014/09/08

  164. In-Plane Anisotropy of a CoFeB-MgO Magnetic Tunnel Junction with Perpendicular Magnetic Easy Axis International-presentation

    E. Hirayama

    International Conference on Solid State Devices and Materials (SSDM)　2014/09/08

  165. Dependence of Magnetic Properties of MgO/CoFeB/Ta Stacks on CoFeB and Ta Thicknesses International-presentation

    K. Watanabe

    International Conference on Solid State Devices and Materials (SSDM)　2014/09/08

  166. Properties of Perpendicular-Anisotropy Magnetic Tunnel Junctions Fabricated over The Cu Via International-presentation

    S. Miura

    International Conference on Solid State Devices and Materials (SSDM)　2014/09/08

  167. A Power-Gated 32bit MPU with a Power Controller Circuit Activated by Deep-Sleep-Mode Instruction Achieving Ultra-Low-Power Operation International-presentation

    H. Koike

    International Conference on Solid State Devices and Materials (SSDM)　2014/09/08

  168. Switching Current and Thermal Stability of Perpendicular Magnetic Tunnel Junction with MgO/CoFeB/Ta/CoFeB/MgO Recording Structure Scaling Down to IX nm International-presentation

    H. Sato

    International Conference on Solid State Devices and Materials (SSDM)　2014/09/08

  169. A 500ps/8.5ns Array Read/Werite Latency 1MB Twin ITIMTJ STT-MRAM designed in 90 nm CMOS/40 nm MTJ Process with Novel Positive Feedback S/A Circuit International-presentation

    T. Ohsawa

    International Conference on Solid State Devices and Materials (SSDM)　2014/09/08

  170. 最先端研究開発支援プログラム(FIRST)「省エネルギー・スピントロニクス論理集積回路の研究開発」での論理集積回路研究について

    革新的研究開発推進プログラム(ImPACT)［無充電で長時間使用できる究極のエコIT機器の実現」　2014/08/28

  171. スピントロニクスと集積回路 日の丸半導体復活への道

    産学連携セミナー・寺子屋せんだい　2014/08/25

  172. Properties of CoFeB-MgO magnetic tunnel junctions down to 11nm International-presentation

    SPIE NanoScience +Engineering　2014/08/19

  173. The effect of electric-field on damping constant of ferromagnetic semiconductor (Ga,Mn)As International-presentation

    L. Chen

    32nd International Conference on the Physics of Semiconductors (ICPS)　2014/08/10

  174. From compound semiconductors to spintronics International-presentation

    Lester Eastman Conference on High Performance Devices　2014/08/05

  175. Magnetic domain wall motion and spin-orbit torque induced magnetization switching for three-terminal spintronics devices International-presentation

    S. Fukami

    IEEE International Nanoelectronics Conference (INEC)　2014/07/28

  176. Spintronics for VLSI International-presentation

    8th International Conference on the Physics and Applications of Spin Phenomena in Solids (PASPS 8)　2014/07/28

  177. Spintronics for nonvolatile VLSIs International-presentation

    Tsukuba Nanotechnology Symposium (TNS’14)　2014/07/25

  178. Magnetization reversal mode switching and its application

    S. Kanai

    33rd Electronic Materials Symposium (EMS-33)　2014/07/09

  179. Ferromagnetic resonance spectra of CoFeB-MgO magnetic tunnel junction measured by homodyne detection

    E. Hirayama

    33rd Electronic Materials Symposium (EMS-33)　2014/07/09

  180. CoFeB and Ta capping layer thicknesses dependence of magnetic properties for MgO/CoFeB/Ta stacks

    K. Watanabe

    33rd Electronic Materials Symposium (EMS-33)　2014/07/09

  181. Current induced domain wall motion in Co/Ni wires for nonvolatile memories and logic circuits International-presentation

    S. Fukami

    12th RIEC International Workshop on Spintronics　2014/06/25

  182. Current induced spin orbit torques and chiral magnetic texture in magnetic heterostructures International-presentation

    M. Hayashi

    12th RIEC International Workshop on Spintronics　2014/06/25

  183. Magnetization switching induced by electric field International-presentation

    S. Kanai

    12th RIEC International Workshop on Spintronics　2014/06/25

  184. In-plane current-induced effective fields and magnetization switching in Ta/CoFeB/MgO structures International-presentation

    C. Zhang

    12th RIEC International Workshop on Spintronics　2014/06/25

  185. Current and field induced domain wall creep in Ta/CoFeB/MgO wire International-presentation

    S. Duttagupta

    12th RIEC International Workshop on Spintronics　2014/06/25

  186. Electrical detection and control of magnetization dynamics in (Ga,Mn)As International-presentation

    L. Chen

    12th RIEC International Workshop on Spintronics　2014/06/25

  187. Temperature dependence of thermal stability factor in CoFeB-MgO magnetic tunnel junction International-presentation

    Y. Takeuchi

    12th RIEC International Workshop on Spintronics　2014/06/25

  188. MgO cap thickness dependence of interfacial anisotropy of MgO/FeB/MgO structure International-presentation

    Y. Horikawa

    12th RIEC International Workshop on Spintronics　2014/06/25

  189. High thermal stability of magnetic tunnel junction with CoFeB/Ta/[Co/Pt] multilayer ferromagnetic electrode International-presentation

    S. Ishikawa

    12th RIEC International Workshop on Spintronics　2014/06/25

  190. In-plane anisotropy in CoFeB magnetic tunnel junction International-presentation

    E. Hirayama

    12th RIEC International Workshop on Spintronics　2014/06/25

  191. dc voltage measured in Py/ZnO bilayer under ferromagnetic resonance International-presentation

    S. D'Ambrosio

    12th RIEC International Workshop on Spintronics　2014/06/25

  192. Current status and prospects of magnetoresistive random access memory technology International-presentation

    6th Forum on New Materials (CIMTEC 2014)　2014/06/15

  193. Material stack design with high tolerance to process induced damage in domain wall motion device International-presentation

    H. Honjo

    IEEE International Magnetics Conference (INTERMAG)　2014/05/04

  194. Temperature dependence of current induced spin-orbit torques International-presentation

    J. Kim

    IEEE International Magnetics Conference (INTERMAG)　2014/05/04

  195. Thermal stability and critical current for domain wall motion in nanowires with reduced dimensions International-presentation

    S. Fukami

    IEEE International Magnetics Conference (INTERMAG)　2014/05/04

  196. Thermal stability and critical current for domain wall motion in nanowires with reduced dimensions International-presentation

    J. Torrejon

    IEEE International Magnetics Conference (INTERMAG)　2014/05/04

  197. Three-terminal spintronics cells for high-speed and nonvolatile VLSIs International-presentation

    N. Sakimura

    IEEE International Magnetics Conference (INTERMAG)　2014/05/04

  198. 強磁性金属薄膜における電流誘起有効磁場の膜厚依存性

    河口真志

    日本物理学会秋季大会　2014/03/27

  199. Ta and CoFeB thickness dependence of sheet resistance in Ta/CoFeB/MgO heterostructures

    C. Zhang

    第61回応用物理学会春季学術講演会　2014/03/17

  200. 電流誘起磁壁移動素子のしきい電流と熱安定性の素子サイズ依存性

    S. Fukami

    第61回応用物理学会春季学術講演会　2014/03/17

  201. スピントロニクス技術を用いた論理集積回路

    第61回応用物理学会春季学術講演会　2014/03/17

  202. 電界誘起磁化ダイナミクスの実時間観測

    S. Kanai

    第61回応用物理学会春季学術講演会　2014/03/17

  203. Ferromagnetic resonance spectra of CoFeB-MgO magnetic tunnel junctions measured by homodyne detection

    E. Hirayama

    第61回応用物理学会春季学術講演会　2014/03/17

  204. CoFeB/Ta/[Co/Pd]強磁性電極を用いた磁気トンネル接合

    S. Ishikawa

    第61回応用物理学会春季学術講演会　2014/03/17

  205. Current-induced switching properties under perpendicular magnetid field magnetic tunnel junctions with perpendicular magnetic easy axis

    ハンジャン

    第61回応用物理学会春季学術講演会　2014/03/17

  206. MgO/FeB/MgO積層膜における磁気異方性の上部MgO層厚依存性

    堀川喜久

    第61回応用物理学会春季学術講演会　2014/03/17

  207. Two-barrier stability that allows low-power operation in current-induced domain-wall

    K. J. Kim

    第61回応用物理学会春季学術講演会　2014/03/17

  208. Current induced domain wall creep in Ta/CoFeB/MgO/Ta wire

    S. Duttagupta

    第61回応用物理学会春季学術講演会　2014/03/17

  209. Electric field effects on Li codoped (Ga,Mn)As

    S. Miyakozawa

    第61回応用物理学会春季学術講演会　2014/03/17

  210. Temperature dependence of electric-field on magnetic properties of Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

    A. Okada

    第61回応用物理学会春季学術講演会　2014/03/17

  211. Magnetization switching by two successive voltage pulses

    S. Kanai

    第61回応用物理学会春季学術講演会　2014/03/17

  212. Spintronics: Materials throuth devices to integrated circuits International-presentation

    International Meeting on Spintronics for Integrated Ciucuits Applications and Beyond　2014/03/13

  213. Nanoscale magnetic tunnel junction International-presentation

    American Physical Society, March Meeting　2014/03/03

  214. スピントロニクスが拓く新しい集積回路の世界

    平成25年度最先端研究開発戦略的強化事業・最先端研究開発支援プログラムFIRST EXPO　2014/02/28

  215. A90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications International-presentation

    N. Sakimura

    International Solid-State Circuits Conference (ISSCC)　2014/02/22

  216. Electric-field modulation of damping constant in (Ga,Mn)As International-presentation

    L. Chen

    AIMR International Symposium 2014 (AMIS)　2014/02/17

  217. ZnO as a spintronics material International-presentation

    S. D'Ambrosio

    AIMR International Symposium 2014 (AMIS)　2014/02/17

  218. スピントロニクスが拓く新しい集積回路の世界

    FIRST研究成果ビジネスマッチングシンポジウム --日本の電子産業、復活の狼煙（のろし）--　2014/01/22

  219. Advances in spintronics devices for microelectronics –from spin-transfer torque International-presentation

    S. Fukami

    19th Asia and South Pacific Design Automation Conference (ASP-DAC)　2014/01/20

  220. スピントロニクス

    北海道学力向上推進事業・札幌南高等学校講演会　2014/01/05

  221. スピントロニクス素子と材料 －磁気トンネル接合の最近の進展－

    顕微ナノ材料研究会　2013/12/26

  222. Magnetic property of Li codoped (Ga,Mn)As

    S. Miyakozawa, L. Chen, F. Matsukura, H. Ohno

    Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-18)　2013/12/09

  223. Temperature dependence of electric-field effects on magnetic anisotropies in Ta-CoFeB-MgO

    A. Okada, S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno

    Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-18)　2013/12/09

  224. 20-nm magnetic domain wall motion memory with ultralow-power operation International-presentation

    S. Fukami, M. Yamanouchi, K.-J. Kim, T. Suzuki, N. Sakimura, D. Chiba, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, H. Ohno

    2013 IEEE International Electron Devices Meeting (IEDM)　2013/12/09

  225. Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm International-presentation

    H. Sato, T. Yamamoto, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F. Matsukura, N. Kasai, H. Ohno

    2013 IEEE International Electron Devices Meeting (IEDM)　2013/12/09

  226. 垂直磁化容易CoFeB-MgO磁気トンネル接合における電流誘起磁化反転の面内磁場依存性

    久保田修司, 山ノ内路彦, 佐藤英夫, 池田正二, 松倉文礼, 大野英男

    応用物理学会東北支部講演会　2013/12/05

  227. MgO/Fe(B)/MgO積層膜の磁気特性

    堀川喜久, 石川慎也, 池田正二, 佐藤英夫, 山ノ内路彦, 深見俊輔, 松倉文礼, 大野英男

    応用物理学会東北支部講演会　2013/12/05

  228. Three-terminal magnetic domain wall motion device for spintronics VLSIs International-presentation

    S. Fukami, H. Ohno

    International Japanese-French Workshop on Spintronics　2013/11/27

  229. Cuベースチャネル3端子磁気トンネル接合

    山ノ内路彦, 陳林, 金俊延, 林将光, 佐藤英夫, 深見俊輔, 池田正二, 松倉文礼, 大野英男

    応用物理学会スピントロニクス研究会・日本磁気学会スピンエレクトロニクス専門研究会共同主催研究会「元素戦略、環境調和を視野に入れたスピントロニクスの新展開」　2013/11/11

  230. Material Status and Outlook of STT-Based Memory Technology International-presentation

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  231. Distribution of critical current density for magnetic domain wall motion International-presentation

    S. Fukami, M. Yamanouchi, K. J. Kim, T. Koyama, D. Chiba, S. Ikeda, N. Kasai, T. Ono, H. Ohno

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  232. Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis International-presentation

    C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  233. Co/Pt multilayer-based magnetic tunnel junctions with thin Ta spacer layer International-presentation

    S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  234. Temperature dependence of thermal stability factor of CoFeB-MgO magnetic tunnel junctions with perpendicular easy-axis International-presentation

    H. Sato, Y. Takeuchi, K. Mizunuma, S. Ishikawa, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  235. Process induced damage by C-O based etching chemistries and its recovery for a CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy-axis International-presentation

    K. Kinoshita, H. Honjo, K. Tokutome, S. Miura, M. Murahata, K. Mizunuma, H. Sato, S. Fukami, S. Ikeda, N. Kasai, H. Ohno

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  236. Fabrication of a perpendicular-MTJ-Based compact nonvolatile programmable switch using shared-writecontrol-transistor structure International-presentation

    D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  237. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer International-presentation

    H. Honjo, S. Fukami, K. Ishihara, R. Nebashi, K. Kinoshita, K. Tokutome, M. Murahata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  238. Analysis of single-event upset in MTJ/MOS-Hybrid circuits employing calculation of switching probability by radiation-induced corrent International-presentation

    N. Sakimura, R. Nebashi, M. Natsui, T. Hanyu, H. Ohno, T. Sugibayashi

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  239. MTJ resistance distribution of 1-kbit 1T-1MTJ STT-MRAM cell arrays fabricated on a 300-mm wafer International-presentation

    H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  240. Trend of TMR and variation in Vth for keeping data load robustness of MOS/MTJ hybrid latches International-presentation

    T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  241. Two-barrier stability in current-induced domain-wall motion device International-presentation

    K. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba, K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, H. Kohno, G. Tatara, T. Ono

    58th Magnetism and Magnetic Materials (MMM)　2013/11/04

  242. Spintronics Devices for Nonvolatile CMOS VLSIs International-presentation

    150 years diplomatic relation Japan-Switzerland, Swiss-Japanese Nanoscience Workshop, Materials Phenomena at Small Scale　2013/10/09

  243. Current-induced magnetic domain wall motion in Co/Ni wire and its application to nonvolatile memory devices International-presentation

    S. Fukami, H. Ohno

    150 years diplomatic relation Japan-Switzerland, Swiss-Japanese Nanoscience Workshop, Materials Phenomena at Small Scale　2013/10/09

  244. 垂直磁化Co/Ni細線中の磁壁電流駆動におけるスピンホール効果の影響

    吉村瑶子, 小山知弘, 森山貴広, K. J. Kim, 千葉大地, 仲谷栄伸, 深見俊輔, 山ノ内路彦, 大野英男, 小野輝男

    日本物理学会秋季大会　2013/09/25

  245. 強磁性金属薄膜における電流誘起有効磁場の直流ホール測定による決定

    河口真志, 島村一利, 深見俊輔, 松倉文礼, 大野英男, 森山貴広, 千葉大地, 小野輝男

    日本物理学会秋季大会　2013/09/25

  246. Co/Pt multilayer based reference layers in magnetic tunnel junction for novolatile spintronics VLSIs International-presentation

    H. Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura, H. Ohno

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  247. Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process International-presentation

    S. Miura, H. Honjo, K. Tokutome, N. Kasai, S. Ikeda, T. Endoh, H. Ohno

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  248. Mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires International-presentation

    J. Ishihara, Y. Ohno, H. Ohno

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  249. A 4x4 nonvolatile multiplier using novel MTJ-CMOS hybrid latch and flip-flop International-presentation

    T. Ohsawa, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  250. Strategy of STT-MRAM cell design and its power gating technique for low-voltage and low-power cache memoroes International-presentation

    T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  251. Wide operational margin capability of 1kbit STT-MRAM array chip with 1-PMOS and 1-bottom-pin-MTJ type cell International-presentation

    H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  252. Demonstration of a nonvolatile processor core chip with software-controlled trhee-terminal MRAM cells for standby-power critical applications International-presentation

    R. Nebashi, Y. Tsuji, H. Honjo, N. Sakimura, A. Morioka, K. Tokutome, S. Miura, S. Fukami, M. Yamanouchi, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  253. Studies on selective devices for spin-transfer-torque magnetic tunnel junctions International-presentation

    T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    International Conference on Solid State Devices and Materials (SSDM)　2013/09/24

  254. Tuneable chiral domain wall motion by intertwined spin Hall effect and spin transfer torque in ultrathin TaN/CoFeB/MgO International-presentation

    J. Torrejon, J. Kim, J. Sinha, S. Mitani, M. Hayashi, M. Yamanouchi, H. Ohno

    Donostia International Conference on Nanoscaled Magnetism and Applications (ICNMA)　2013/09/09

  255. 反応性イオンエッチングを用いた磁気トンネル接合の作製

    山本直志, 佐藤英夫, 木下啓蔵, 池田正二, 大野英男

    第37回日本磁気学会学術講演会　2013/09/03

  256. 垂直磁気異方性CoNi超格子膜の作製と磁気特性の評価

    深見俊輔, 佐藤英夫, 山ノ内路彦, 池田正二, 大野英男

    第37回日本磁気学会学術講演会　2013/09/03

  257. Co/Ni細線における磁壁デピニング確率の測定と計算

    深見俊輔, 山ノ内路彦, 池田正二, 大野英男

    第37回日本磁気学会学術講演会　2013/09/03

  258. 急峻なFe/GaAs(001)を介したスピン偏極電子の注入特性

    ルークフリート, 吉田健太, 小林裕臣, 金子雄基, 松坂俊一郎, 大野裕三, 大野英男, 本多周太, 井上順一郎, 廣畑貴文

    第37回日本磁気学会学術講演会　2013/09/03

  259. Magnetic Tunnel Junction Technology: Materials and Performance International-presentation

    International Conference on Nanoscale Magnetism (ICNM)　2013/09/02

  260. Introduction to Spintronics for Integrated Circuit Applications International-presentation

    7th International School and Conference on Spintronics and Quantum Information Technology　2013/07/29

  261. Introduction to Spintronics for integrated circuit applications International-presentation

    J. Ishihara, Y. Ohno, H. Ohno

    7th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH7)　2013/07/29

  262. Wire width dependence of suppressed spin dephasing in modulation-doped GaAs/AlGaAs wires International-presentation

    J. Ishihara, Y. Ohno, H. Ohno

    7th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH7)　2013/07/29

  263. Two and three terminal non-volatile spintronics devices for VLSI applications International-presentation

    International Symposium on Advanced Magnetic Materials and Applications (ISAMMA)　2013/07/21

  264. Electric-field induced magnetization switching in CoFeB-MgO with different magnetic field angles International-presentation

    S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura

    International Symposium on Advanced Magnetic Materials and Applications (ISAMMA)　2013/07/21

  265. Electrical reliability of Co/Ni wire for domain wall motion devices International-presentation

    S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai

    International Symposium on Advanced Magnetic Materials and Applications (ISAMMA)　2013/07/21

  266. Two and three terminal non-volatile spintronics devices for VLSI application International-presentation

    International Symposium on Advanced Magnetic Materials and Applications (ISAMMA)　2013/07/21

  267. Liを共添加した(Ga,Mn)Asの作製と評価

    都澤章平, 陳林, 松倉文礼, 大野英男

    第32回電子材料シンポジウム(EMS32)　2013/07/10

  268. Ta/CoFeB/MgO構造における磁気特性の電界効果の強磁性共鳴による検出

    岡田篤, 金井駿, 山ノ内路彦, 池田正二, 松倉文礼, 大野英男

    第32回電子材料シンポジウム(EMS32)　2013/07/10

  269. 垂直磁気異方性CoFeB-MgO磁気トンネル接合のトンネル磁気抵抗特性の温度依存性

    竹内祐太郎, 水沼広太朗, 石川慎也, 佐藤英夫, 池田正二, 山ノ内路彦, 深見俊輔, 松倉文礼, 大野英男

    第32回電子材料シンポジウム(EMS32)　2013/07/10

  270. Current status and prospect of magnetic tunnel junction International-presentation

    H. Ohno

    7th International Conference on Materials for Advanced Technologies (ICMAT)　2013/06/30

  271. What we can learn from ferromagnetism in semiconductors International-presentation

    H. Ohno

    4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)　2013/06/17

  272. Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine International-presentation

    S. Matsunaga, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Fukami, M. Natsui, A. Mochizuki, S. Ikeda, T. Endoh, H. Ohno, T. Endoh

    2013 Symposia on VLSI Circuits　2013/06/12

  273. A 1.5nsec/2.1nsec Random Read/Write Cycle 1Mb STT-RAM Using 6T2MTJ Cell with Background Write for Nonvolatile e-Memories International-presentation

    T. Ohsawa, S. Miura, K. Kinoshita, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    2013 Symposia on VLSI Circuits　2013/06/12

  274. Low-Current Domain Wall Motion MRAM with Perpendicularly Magnetized CoFeB/MgO Magnetic Tunnel Junction and Underlying Hard Magnets International-presentation

    T. Suzuki, H. Tanigawa, Y. Kobayashi, K. Mori, Y. Ito, Y. Ozaki, K. Suemitsu, T. Kitamura, K. Nagahara, E. Kariyada, N. Ohshima, S. Fukami, M. Yamanouchi, S. Ikeda, M. Hayashi, M. Sakao, H. Ohno

    2013 Symposia on VLSI Circuits　2013/06/12

  275. Low-Current Domain Wall Motion MRAM with Perpendicularly Magnetized CoFeB/MgO Magnetic Tunnel Junction and Underlying Hard Magnets International-presentation

    T. Suzuki, H. Tanigawa, Y. Kobayashi, K. Mori, Y. Ito, Y. Ozaki, K. Suemitsu, T. Kitamura, K. Nagahara, E. Kariyada, N. Ohshima, S. Fukami, M. Yamanouchi, S. Ikeda, M. Hayashi, M. Sakao, H. Ohno

    2013 Symposia on VLSI Technology　2013/06/11

  276. MgO/CoFeB/Ta/CoFeB/MgO recording structure with low critical current and high thermal stability International-presentation

    H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    JSPS York-Tohoku Symposium on Magnetic Materials and Spintronic Devices　2013/06/10

    More details Close

    H. Satoによる講演

  277. A 1-Mb STT-MRAM with Zero-Array Standby Power and 1.5-ns Quick Wake-Up by 8-b Fine-Grained Power Gating International-presentation

    T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    5th IEEE International Memory Workshop (IMW)　2013/05/26

  278. Quantitative determination of intrinsic energy barrier for current induced domain wall motion International-presentation

    K. J. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba, K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, T. Ono

    The 8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  279. Influence of in-plane magnetic fields on current-induced domain wall motion in a perpendicularly magnetized Co/Ni nanowire International-presentation

    Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, T. Ono

    The 8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  280. Current-induced effective field vector in Ta│CoFeB│MgO with various layer thicknesses International-presentation

    J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani, H. Ohno

    The 8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  281. Electric field effect on magnetic properties in Fe ultra-thin film International-presentation

    M. Kawaguchi, K. Shimamura, S. Ono, S. Fukami, F. Matsukura, H. Ohno, D. Chiba, T. Ono

    The 8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  282. Temperature dependence of spin polarization in Co/Ni nanowires with different Co and Ni thicknesses determined from magnetic domain wall dynamics International-presentation

    K. Ueda, R. Hiramatsu, D. Chiba, H. Tanigawa, T. Suzuki, S. Fukami, M. Yamanouchi, H. Ohno, Y. Nakatani, T. Ono

    The 8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  283. Monoatomically-layered CoNi film with perpendicular magnetic anisotropy International-presentation

    S. Fukami, H. Sato, M. Yamaguchi, S. Ikeda, H. Ohno

    The 8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  284. (Co100-xFex)80B20 composition dependence of interface anisotropy in MgO/CoFeB/Ta stack structure International-presentation

    H. Sato, R. Koizumi, S. Ikeda, M. Yamanouchi, F. Matsukura, H. Ohno

    The 8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  285. Quantitative determination of intrinsic energy barrier for current induced domain wall motion International-presentation

    K. J. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba, K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, T. Ono

    8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  286. Influence of in-plane magnetic fields on current-induced domain wall motion in a perpendicularly magnetized Co/Ni nanowire International-presentation

    Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, T. Ono

    8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  287. Current-induced effective field vector in Ta│CoFeB│MgO with various layer thicknesses International-presentation

    J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani, H. Ohno

    8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  288. Electric field effect on magnetic properties in Fe ultra-thin film International-presentation

    M. Kawaguchi, K. Shimamura, S. Ono, S. Fukami, F. Matsukura, H. Ohno, D. Chiba, T. Ono

    8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  289. Temperature dependence of spin polarization in Co/Ni nanowires with different Co and Ni thicknesses determined from magnetic domain wall dynamics International-presentation

    K. Ueda, R. Hiramatsu, D. Chiba, H. Tanigawa, T. Suzuki, S. Fukami, M. Yamanouchi, H. Ohno, Y. Nakatani, T. Ono

    8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  290. Monoatomically-layered CoNi film with perpendicular magnetic anisotropy International-presentation

    S. Fukami, H. Sato, M. Yamaguchi, S. Ikeda, H. Ohno

    8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  291. (Co100-xFex)80B20 composition dependence of interface anisotropy in MgO/CoFeB/Ta stack structure International-presentation

    H. Sato, R. Koizumi, S. Ikeda, M. Yamanouchi, F. Matsukura, H. Ohno

    8th International Symposium on Metallic Multilayers (MML2013)　2013/05/19

  292. 不揮発性集積回路応用に向けた CoFeB-MgO磁気トンネル接合の開発状況

    池田正二, 佐藤英夫, 山ノ内路彦, 深見俊輔, 水沼広太朗, 金井駿, 石川慎也, 松倉文礼, 笠井直記, 大野英男

    独立行政法人 日本学術振興会 先端ナノデバイス・材料テクノロジー第151委員会 平成２５年度 第１回研究会「最先端スピンデバイスと新しいスピン制御技術」　2013/05/09

  293. Ta|CoFe|MgOにおける電流誘起実効磁場

    金俊延, J. Sinha, 林将光, 山ノ内路彦, 深見俊輔, 鈴木哲広, 三谷誠司, 大野英男

    第60回応用物理学会春季学術講演会　2013/03/27

  294. CoFeB-MgO垂直磁化容易磁気トンネル接合における反転閾値電流密度の素子サイズ依存性

    水沼広太朗, 山ノ内路彦, 佐藤英夫, 池田正二, 松倉文礼, 大野英男

    第60回応用物理学会春季学術講演会　2013/03/27

  295. 変調ドープ(001)GaAs/AlGaAs細線における電子スピンダイナミクスの細線幅依存性

    石原淳, 大野裕三, 大野英男

    第60回応用物理学会春季学術講演会　2013/03/27

  296. CoFeB-MgO接合における電界誘起磁化スイッチングの磁界角度依存性

    金井駿, 山ノ内路彦, 池田正二, 仲谷栄伸, 松倉文礼, 大野英男

    第60回応用物理学会春季学術講演会　2013/03/27

  297. Co/Pt多層膜とCoFeBの積層膜を用いたMgO障壁磁気トンネル接合

    石川慎也, 佐藤英夫, 山ノ内路彦, 池田正二, 深見俊輔, 松倉文礼, 大野英男

    第60回応用物理学会春季学術講演会　2013/03/27

  298. Enhanced interface perpendicular magnetic anisotropy in nitrogen doped Ta underlayer with CoFeB|MgO

    ジャンバルダン・シンハ, 林将光, 小塚雅也, 山ノ内路彦, 深見俊輔, 三谷誠司, 宝野和博, 大野英男

    第60回応用物理学会春季学術講演会　2013/03/27

  299. 3端子磁壁移動デバイスの開発

    深見俊輔, 山ノ内路彦, 池田正二, 大野英男

    第60回応用物理学会春季学術講演会　2013/03/27

  300. 非対称な膜構成を持つ強磁性金属薄膜における異常磁気抵抗効果

    河口真志, 島村一利, 深見俊輔, 松倉文礼, 大野英男, 千葉大地, 小野輝男

    日本物理学会第６８回年次大会　2013/03/26

  301. Helicity-dependent photocurrent in a (110) GaAs quantum well stack International-presentation

    D.C.Schmadel, M. –H. Kim, A. B. Sushkov, G. S. Jenkins, J. D. Koralek, J. E. Moore, J. Orenstein, Y. Ohno, H. Ohno, H. D. Drew

    American Physical Society, March Meeting　2013/03/18

  302. スピントロニクス材料・デバイス基盤技術の創出

    伊藤公平, 吉田博, 大野英男

    東北大学電気通信研究所平成24年共同プロジェクト研究発表会　2013/02/28

  303. 半導体量子ナノ構造の電子・核スピン物性の研究

    石原淳, 大野裕三, 大野英男

    東北大学電気通信研究所平成24年共同プロジェクト研究発表会　2013/02/28

  304. Spintronics makes CMOS VLSI nonvolatile International-presentation

    5th Int. Symp. on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma)　2013/01/28

  305. Physics and Materials of Perpendicular CoFeB-MgO Magnetic Tunnel Junction International-presentation

    Tohoku-Harvard Joint Workshop　2013/01/15

  306. Anisotropic Spin Dephasing Dynamics of Quasi-one Dimensional Electron Gas in Modulation-doped GaAs/AlGaAs Wire International-presentation

    J. Ishihara, Y. Ohno, H. Ohno

    Tohoku-Harvard Joint Workshop　2013/01/15

  307. Magnetization Switching in CoFeB/MgO by electric Fields International-presentation

    S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, H. Ohno

    Tohoku-Harvard Joint Workshop　2013/01/15

  308. Ferromagnetic Resonance Measurement in CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis International-presentation

    K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, H. Ohno

    Tohoku-Harvard Joint Workshop　2013/01/15

  309. Magnetic properties of MgO-[Co/Pt] multilayer with a CoFeB insertion layer International-presentation

    S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference　2013/01/14

  310. MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular magnetic easy axis International-presentation

    H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, K. Mizunuma, F. Matsukura, H. Ohno

    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference　2013/01/14

  311. High speed switching by pulse current with duration down to subnanoseconds in CoFeB/MgO based magnetic tunnel junctions with perpendicular easy axis International-presentation

    K. Miura, M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura, H. Ohno

    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference　2013/01/14

  312. Determination of the current induced effective field vector in Ta|CoFeB|MgO International-presentation

    J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani, H. Ohno

    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference　2013/01/14

  313. Enhanced perpendicular magnetic anisotropy in Ta|CoFeB|MgO by nitrogen doping the Ta underlayer International-presentation

    J. Sinha, M. Hayashi, M. Kodzuka, M. Yamanouchi, S. Fukami, S. Mitani, K. Hono, H. Ohno

    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference　2013/01/14

  314. Transport and structural properties of the abrupt Fe/GaAs(001) interface International-presentation

    L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, S. Honda, J. Inoue, A. Hirohata

    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference　2013/01/14

  315. Electric-field manipulation of magnetization International-presentation

    Sweden-Japan Workshop on Quantum Nano-Physics and Electronics (QNANO2013)　2013/01/13

  316. 垂直磁化CoFeB-MgO接合における電界誘起磁化反転

    金井駿, 山ノ内路彦, 池田正二, 仲谷栄伸, 松倉文礼, 大野英男

    第17回半導体スピン工学の基礎と応用（PASPS, Physics and Applications of Spin-related Phenomena in Semiconductors）　2012/12/19

  317. 垂直磁化Co/Ni細線中の磁壁電流駆動に対する面内磁場の影響

    吉村瑶子, 小山知弘, 千葉大地, 深見俊輔, 山ノ内路彦, 大野英男, 仲谷栄伸, 小野輝男

    第17回半導体スピン工学の基礎と応用（PASPS, Physics and Applications of Spin-related Phenomena in Semiconductors）　2012/12/19

  318. スピントロニクス素子の将来展望

    東北大学電気通信研究所共同プロジェクト研究会「ナノスケールのゆらぎ・電子相関制御に基づく新規ナノデバイス」　2012/12/14

  319. Magnetic tunnel junctions of MgO-[Co/Pt] multilayers with a CoFeB insertion layer

    S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

    スピントロニクス入門セミナー・若手研究会　2012/12/11

  320. Spintronics-based Nanovolatile CMOS VLSI International-presentation

    Advanced Metallization Conference 2012 (ADMETA)　2012/10/23

  321. Bridging Semiconductors and Magnetism – Toward Stand-by Power Free VLSIs International-presentation

    International Conference on Hot-Wire Chemical Vapor Depositon (HWCVD7)　2012/10/08

  322. Domain Wall Motion by Current In a Co/Ni Nanowire with Perpendicular Magnetization under In-Plane Magnetic Fields International-presentation

    Y. Yoshimura

    International Conference of the Asian Union of Magnetics Societies (ICAUMS)　2012/10/02

  323. Magnetic Anisotropy in CoFe(B)/MgO Stack Structures International-presentation

    S. Ikeda

    International Conference of the Asian Union of Magnetics Societies (ICAUMS)　2012/10/02

  324. Physics and Materials of Perpendicular CoFeB-MgO Magnetic Tunnel Junction International-presentation

    21th International Colloquium on Magnetic Films and Surfaces (ICMFS)　2012/09/24

  325. Domain wall depinning probability - Experiment and Theory International-presentation

    S. Fukami

    21th International Colloquium on Magnetic Films and Surfaces (ICMFS)　2012/09/24

  326. Ferromagnetic resonance by means of homodyne detection technique in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis International-presentation

    K. Mizunuma

    21th International Colloquium on Magnetic Films and Surfaces (ICMFS)　2012/09/24

  327. Electric-field magnetization switching in CoFeB-MgO with perpendicular anisotropy International-presentation

    S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno

    21th International Colloquium on Magnetic Films and Surfaces (ICMFS)　2012/09/24

  328. Electric-field manipulation and switching of magnets International-presentation

    International Workshop on Spin Phenomena in Reduced Dimensions　2012/09/19

  329. CoFeB-MgO垂直磁化容易磁気トンネル接合における強磁性共鳴のホモダイン検出

    水沼広太朗

    第73回応用物理学会学術講演会　2012/09/11

  330. MgO/CoFeB/Ta/CoFeB/MgO構造を用いた垂直磁気容易磁気トンネル接合

    佐藤英夫

    第73回応用物理学会学術講演会　2012/09/11

  331. 細線加工した(001)GaAs/AlGaAs量子井戸における動的核スピン分極

    石原淳

    第73回応用物理学会学術講演会　2012/09/11

  332. 垂直磁気異方性CoFeB-MgO接合における電界誘起磁化反転

    金井駿

    第73回応用物理学会学術講演会　2012/09/11

  333. Magnetism for Nonvolatile Memories and Beyond International-presentation

    Joint European Magnetic Symposia (JEMS 2012)　2012/09/09

  334. 材料科学が拓く新たな論理集積回路のパラダイム

    東北大-産総研合同シンポジウム「材料科学で日本を元気にする」　2012/08/31

  335. Spintronics Meets CMOS VLSI International-presentation

    Samsung the Future Technology Seminar　2012/08/28

  336. Perpendicular CoFeB-MgO magnetic tunnel junction International-presentation

    H. Sato, K. Miura, H. D. Gan, K. Mizunuma, S. Fukami, S. Kanai, F. Matsukura, N, Kasai

    SPIE Nanoscience+Engineering 2012　2012/08/12

  337. Magnetic Tunnel Junction: A Spintronic Nonvolatile Device for VLSI Applications International-presentation

    2012 IEEE Lester Eastman Conference on High Performance Devices　2012/08/07

  338. Magnetic Semiconductors: Materials, Physics and Devices International-presentation

    7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII)　2012/08/05

  339. Bridging Semiconductor and Magnetism International-presentation

    31st International Conference on the Physics of Semiconductors (ICPS 2012)　2012/07/29

  340. Electrical and Optical Detection of Spin Injection in CoFe/MgO/n-GaAs Junctions International-presentation

    Y. Ohno

    31st International Conference on the Physics of Semiconductors (ICPS 2012)　2012/07/29

  341. Ferromagnetism in Semiconductors International-presentation

    4th WUN International Conference on Spintronics (WUN-SPIN)　2012/07/23

  342. 核電気共鳴によるn-GaAs/GaAlAs(110)量子井戸中の核スピンコヒーレンスの制御

    張超亮

    第31回電子材料シンポジウム　2012/07/11

  343. 垂直磁気トンネル接合におけるCo/Pt電極の磁気異方性のPt膜厚および熱処理温度依存性

    石川慎也

    第31回電子材料シンポジウム　2012/07/11

  344. Perpendicular CoFeB-MgO for Spintronics Devices International-presentation

    19th International Conference on Magnetism (ICM2012)　2012/07/08

  345. CoFeB-MgO Perpendicular Magnetic Tunnel Junction International-presentation

    Tohoku University-IMEC Seminar　2012/06/21

  346. A 3.14um2 4T-2MTJ-Cell Fully Parallel TCAM Based on Nonvolatile Logic-in-Memory Architecture International-presentation

    S. Matsunaga

    2012 Symposium on VLSI Circuits　2012/06/13

  347. 1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique with 1.0ns/200ps Wake-up/Power-off Times International-presentation

    T. Ohsawa

    2012 Symposium on VLSI Circuits　2012/06/13

  348. High-Speed and Reliable Domain Wall Motion Device: Material Design for Embedded Memory and Logic Application International-presentation

    S. Fukami

    2012 Symposium on VLSI Technology　2012/06/12

  349. Spintronics Primitive Gate with High Error Correction Efficiency 6(Perror)2 for Logic-in Memory Architecture International-presentation

    Y. Tsuji

    2012 Symposium on VLSI Technology　2012/06/12

  350. Restructuring of Memory Hierarchy in Computing System with Spintronics-Based Technologies International-presentation

    T. Endoh

    2012 Symposium on VLSI Technology　2012/06/12

  351. Ultrafast Parallel Reconfiguration of 3D-Stacked Reconfigurable Spin Logic Chip with On-chip SPRAM(SPin-transfer torque RAM) International-presentation

    T. Tanaka

    2012 Symposium on VLSI Technology　2012/06/12

  352. Magnetic Tunnel Junction for Magnetoresistive Random Access memory and Beyond International-presentation

    Silicon Nanoelectronics Workshop (SNW)　2012/06/10

  353. CMOS VLSI Meets Spintronics International-presentation

    Qualcomm Technology Forum　2012/06/07

  354. Factors Determining Thermal Stability in CoFeB-MgO Perpendicular Junctions International-presentation

    H. Sato

    9th RIEC International Workshop on Spintronics　2012/05/31

  355. Electromotive Forces in (Ga, Mn)As-based Structures International-presentation

    F. Matsukura

    9th RIEC International Workshop on Spintronics　2012/05/31

  356. Coherent Control of Nuclear Spins in a (110) GaAs/GaAlAs Quantum Well by Nuclear Electric Resonance International-presentation

    C. Zhang

    9th RIEC International Workshop on Spintronics　2012/05/31

  357. Electrical and Optical Detection of Spin Polarized Electrons in n-GaAs/MgO/CoFe Junctions International-presentation

    Y. Kaneko

    9th RIEC International Workshop on Spintronics　2012/05/31

  358. Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field International-presentation

    Y. Ohno

    9th RIEC International Workshop on Spintronics　2012/05/31

  359. Magnetic Anisotropy of Co/Pt based Electrodes for Magnetic Tunnel Junctions with perpendicular Magnetic Easy Axis International-presentation

    S. Ishikawa

    9th RIEC International Workshop on Spintronics　2012/05/31

  360. Electrical Signal Related to Ferromagnetic Resonance in (Ga, Mn)As/p-GaAs bilayer Structure International-presentation

    L. Chen

    9th RIEC International Workshop on Spintronics　2012/05/31

  361. Perpendicular Magnetic Tunnel Junction for Nonvolatile Electronics International-presentation

    E-MRS & Nature Materials Workshop, “Frontiers in Materials: Spintronics”　2012/05/13

  362. Spin injection across abrupt Fe/GaAs(001) interfaces International-presentation

    L. Fleet

    International Magnetics Conference (INTERMAG)　2012/05/07

  363. Thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions International-presentation

    H. Sato

    International Magnetics Conference (INTERMAG)　2012/05/07

  364. CoFeB composition dependence of magnetic anisotropy and tunnel magnetoresistance in CoFeB/MgO stack structures International-presentation

    International Magnetics Conference (INTERMAG)　2012/05/07

  365. MTJ based non volatile SRAM and low power non volatile logic-in-memory architecture International-presentation

    T. Endoh

    International Magnetics Conference (INTERMAG)　2012/05/07

  366. Physics and Materials Science of Perpendicular MgO-CoFeB International-presentation

    Korean Physical Society, Spring Meeting　2012/04/25

  367. 半導体と磁性体に橋を架ける

    第59回応用物理学会学術講演会　2012/03/15

  368. 超薄膜を用いた垂直磁化型強磁性トンネル接合

    第59回応用物理学会学術講演会　2012/03/15

  369. CoFeB/MgO/CoFeB垂直磁化トンネル磁気抵抗素子のスピントルクダイオード効果

    井波暢人

    第59回応用物理学会学術講演会　2012/03/15

  370. 垂直CoFeB/MgO磁気トンネル接合の熱安定性の記録層膜厚依存性

    佐藤英夫

    第59回応用物理学会学術講演会　2012/03/15

  371. CoFeB/MgO積層構造における磁気特性のCoFeB組成依存性

    小泉遼平

    第59回応用物理学会学術講演会　2012/03/15

  372. 歪(110)GaAs/AlGaAs量子井戸における四重極分裂の磁場依存性

    石原 淳

    第59回応用物理学会学術講演会　2012/03/15

  373. 歪(110)GaAs/AlGaAs量子井戸における核スピン共鳴線幅の磁場依存性

    石原 淳

    第59回応用物理学会学術講演会　2012/03/15

  374. Spintronics Device for Stand-by Power Free Nonvolatile CMOS VLSI International-presentation

    American Physical Society, March Meeting 2012　2012/02/27

  375. Recent Progress in Spintronics Technology for Nonvolatile VLSIs International-presentation

    5th International Symposium and 4th Student Organizing International Mini-Conference on Information Electronics Systems　2012/02/22

  376. Ferromagnetism in Semiconductors International-presentation

    19th Korean Conference on Semiconductors　2012/02/15

  377. Spintronics makes integrated circuits low-power and high performance International-presentation

    Presentation of the "Guardian Angeles" flagship by EPFL Prof. A. Ionescu　2012/02/15

  378. Perpendicular CoFeB-MgO for Spintronics Applications International-presentation

    Magnetic Single Nano-Object Workshop & School (M-SNOWS 2012)　2012/02/05

  379. Tunnel stability factor of CoFeB/MgO perpendicular magnetic tunnel junctions International-presentation

    H. Sato

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  380. Current induced magnetization dynamics in CoFeB/MgO nanostructures International-presentation

    M. Hayashi

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  381. Proposal of new MTJ-based nonvolatile memories International-presentation

    T. Ohsawa

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  382. A content addressable memory using three-terminal magnetic domain wall motion cells International-presentation

    R. Nebashi

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  383. Annealing temperature dependence of tunnel magnetoresistance in MgO magnetic tunnel junctions with thin CoFeB electrodes International-presentation

    H. Gan

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  384. B concentration dependence of magnetic anisotropy in MgO/CoFeB/Ta stack structure International-presentation

    R. Koizumi

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  385. Energy-assisted oxidation process of Mg layer for MgO-MTJs International-presentation

    H. Yamamoto

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  386. Spin torque diode effect of perpendicularly magnetized CoFeB/MgO/CoFeB magnetic tunnel junctions International-presentation

    N. Inami

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  387. Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb channel in field-effect structure International-presentation

    S. Akita

    2nd CSIS Int. Symposium on Spintronics-based VLSIs and 8th RIEC International Workshop on Spintronics　2012/02/02

  388. 半導体における強磁性

    MLFシンポジウム　2012/01/19

  389. A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching International-presentation

    T. Endoh

    2011 IEEE International Electron Devices Meeting(IEDM)　2011/12/05

  390. CoFeB-MgO system for spintronic devices International-presentation

    山ノ内路彦

    The 7th Taiwan International Conference on Spintronics　2011/12/02

  391. (Ga,Mn)Sb電界効果素子におけるキュリー温度の正孔濃度依存性

    金子雄基

    第16回半導体スピン工学の基礎と応用（PASPS-16)　2011/11/28

  392. GaAs/AlGaAs量子井戸における電子スピンダイナミクスの細線方向依存性

    石原 淳

    第16回半導体スピン工学の基礎と応用（PASPS-16)　2011/11/28

  393. Spintronics-based Nonvolatile CMOS VLSI International-presentation

    Joint Polish-Japanese Workshop Spintronics –from New Materials to Applications　2011/11/15

  394. Nonvolatile CMOS Circuits Using Magnetic Tunnel Junction International-presentation

    2nd Berkeley Symposium on Energy Efficient Electronic Systems　2011/11/03

  395. 垂直磁気異方性電極磁気トンネル接合の進展

    応用電子物性分科会・スピントロニクス研究会「スピントロニクスデバイスの新展開」　2011/11/02

  396. Spin orbit field assisted current driven domain wall motion in perpendicularly magnetized ultrathin CoFeB/MgO nanowires International-presentation

    M. Hayashi

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  397. Domain patterns in demagnetized CoFeB/MgO structures with perpendicular anisotropy International-presentation

    M. Yamanouchi

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  398. Annealing stability of perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions with various junction sizes International-presentation

    H Gan

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  399. Decrease in intrinsic critical current density under magnetic field along hard in-plane axis of free layer in magnetic tunnel junctions with in-plane anisotropy International-presentation

    K. Miura

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  400. Eigenmode analysis and thermal stability of magnetic tunnel junctions with synthetic antiferromagnet free layers International-presentation

    D. Marko

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  401. The MTJ with NiFeB/Fe free layer for magnetic logic International-presentation

    H. Honjo

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  402. Design of a 270ps-access 7T-2MTJ-cell nonvolatile ternary content-addressable memory International-presentation

    S. Matsunaga

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  403. 50%-transistor-less standby-power-free 6-input LUT circuit using redundant MTJ-based nonvolatile logic-in-memory architecture International-presentation

    D. Suzuki

    56th Annual Conference on Magnetism and Magnetic Materials　2011/10/30

  404. Spintronics-based LSI: A Route to Stand-by Power Free Society International-presentation

    Tohoku University 4th International Symposium　2011/10/27

  405. Photocurrent Measurements on a Quantum Cascade Laser Device byFourier Transform Infrared Microscope International-presentation

    E. C. Enobio

    24th International Microprocesses and Nanotechnology Conference (MNC2011)　2011/10/24

  406. Electrical Control of the Exciton Fine Structure splitting in GaAs Island Quantum Dots for the Generation of Polarization-entangled Photons International-presentation

    M. Ghali

    24th International Microprocesses and Nanotechnology Conference (MNC2011)　2011/10/24

  407. スピントロニクス構造の熱的安定性

    東北大学電気通信研究所共同プロジェクト研究会「ナノスケールのゆらぎ・電子相関制御に基づく新規ナノデバイス」　2011/10/21

  408. Magnetoresistive Random Access Memory with Spin Transfer Torque Write (Spin RAM) –Present and Future- International-presentation

    International Conference on Solid State Devices and Materials (SSDM)　2011/09/28

  409. Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs International-presentation

    T. Ohsawa

    International Conference on Solid State Devices and Materials (SSDM)　2011/09/28

  410. Novel 2step writing method for STT-RAM to improve switching probability and write speed International-presentation

    F. Iga

    International Conference on Solid State Devices and Materials (SSDM)　2011/09/28

  411. High-speed-search nonvolatile TCAM using MTJ devices International-presentation

    S. Matsunaga

    International Conference on Solid State Devices and Materials (SSDM)　2011/09/28

  412. A compact nonvolatile logic element using an MTJ/MOS-hybrid structure International-presentation

    D. Suzuki

    International Conference on Solid State Devices and Materials (SSDM)　2011/09/28

  413. Time-resolved switching characteristic in magnetic tunnel junction with spin transfer torque write International-presentation

    F. Iga

    International Conference on Solid State Devices and Materials (SSDM)　2011/09/28

  414. 垂直CoFeB/MgO 磁気トンネル接合のスイッチング電流と熱安定性

    佐藤英夫

    第35回日本磁気学会学術講演会　2011/09/27

  415. 垂直磁化CoFeB/MgO 細線における電流誘起磁壁移動

    深見俊輔

    第35回日本磁気学会学術講演会　2011/09/27

  416. 磁性材料のリアクティブイオンエッチング

    山本直志

    第35回日本磁気学会学術講演会　2011/09/27

  417. Nonvolatile Spintronic-based CMOS VLSI International-presentation

    Nanoscience and Nanotechnology Conference (n&n11)　2011/09/19

  418. MgO-CoFeB Perpendicular Magnetic Tunnel Junction International-presentation

    Seminar of Center for Materials for Information Technology, University of Alabama　2011/09/09

  419. 磁性半導体を出発点として

    応用物理学会スクール　2011/08/29

  420. 磁気トンネル接合素子のプラズマプロセス誘起ダメージとリカバリーの試み

    木下啓蔵

    第72回応用物理学会学術講演会　2011/08/29

  421. ３端子磁壁移動素子のスケーラビリティー

    深見俊輔

    第72回応用物理学会学術講演会　2011/08/29

  422. Ta/Co20Fe60B20/MgO 接合における電界による垂直磁気異方性変調の膜厚及び熱処理温度依存性

    金井駿

    第72回応用物理学会学術講演会　2011/08/29

  423. n-GaAs/MgO/CoFe接合を用いたスピン蓄積と拡散の光学的検出

    金子雄基

    第72回応用物理学会学術講演会　2011/08/29

  424. 細線加工したGaAs/AlGaAs量子井戸における電子スピン緩和時間の磁場依存性

    石原 淳

    第72回応用物理学会学術講演会　2011/08/29

  425. 垂直磁化細線における電流誘起磁壁移動

    深見俊輔

    第36回スピンエレクトロニクス専門研究会　2011/08/22

  426. Electric field control of ferromagnetism in III-V ferromagnetic semiconductor structures International-presentation

    千葉大地

    Moscow International Symposium on Magnetism　2011/08/21

  427. Electric-field Effects on Magnetic Semiconductors and Metals International-presentation

    Workshop on Spin Transport in Solids　2011/08/08

  428. Diluted Magnetic Semiconductors –An Introduction- International-presentation

    International Conference and School on Spintronics and Quantum Information Technology (SPINTECH VI)　2011/08/01

  429. Annealing stability of perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions International-presentation

    H. Gan

    International Conference and School on Spintronics and Quantum Information Technology (SPINTECH VI)　2011/08/01

  430. Strong spin relaxation anisotropy of electrons in modulation-doped GaAs/AlGaAs wires International-presentation

    J. Ishihara

    International Conference and School on Spintronics and Quantum Information Technology (SPINTECH VI)　2011/08/01

  431. Magnetic anisotropy direction switching in Ta/CoFeB/MgO by electric fields International-presentation

    S. Kanai

    International Conference and School on Spintronics and Quantum Information Technology (SPINTECH VI)　2011/08/01

  432. Scalability of critical current in perpendicular anisotropy CoFeB/MgO magnetic tunnel junction International-presentation

    H. Sato

    International Conference and School on Spintronics and Quantum Information Technology (SPINTECH VI)　2011/08/01

  433. Electrical and optical detection of spin injection in ferromagnetic metal/semiconductor junctions International-presentation

    5th International Workshop on Spin Currents　2011/07/25

  434. Magnetic field dependence of quadrupole interaction in a stralined (110) GaAs quantum well International-presentation

    小野真証

    5th International Workshop on Spin Currents　2011/07/25

  435. Manipulating Magnetism in Semiconductors International-presentation

    UK Semiconductors 2011　2011/07/06

  436. Spintroncs Meets Semiconductor Integrated Circuits International-presentation

    JSPS York-Tohoku Research Symposium on -Magnetic Materials and Spintroncs-　2011/06/27

  437. MgO-CoFeB Interface Perpendicular Anisotropy for Spintronics Devices International-presentation

    European Conference on Physics of Magnetism 2011(PM’11)　2011/06/27

  438. Nonvolatile CMOS VLSI with Spintronics International-presentation

    International Conference on Materials for Advanced Technologies (ICMAT2011)　2011/06/26

  439. Electric-Field Effects on Magnetic Materials ?From Ferromagnetic Semiconductors to CoFeB- International-presentation

    Magnetics and Optics Research International Symposium for New Storage Technology(MORIS2011)　2011/06/21

  440. Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control International-presentation

    松永翔雲

    2011 Symposia on VLSI Circuits　2011/06/15

  441. A content addressable memory using magnetic domain wall motion cells International-presentation

    R. Nebashi

    2011 Symposia on VLSI Circuits　2011/06/15

  442. CoFeB/MgO based perpendicular magnetic tunnel junctions with stepped structure for symmetrizing different retention times of “0” and “1” information International-presentation

    三浦勝哉

    2011 Symposia on VLSI Technology　2011/06/14

  443. スピントロニクスによる不揮発性VLSI

    SEMI Forum Japan　2011/05/31

  444. 半導体スピントロニクス-強磁性半導体を中心として-

    日本磁気学会　2011/05/20

  445. Perpendicular Easy-Axis MgO-CoFeB Magnetic Tunnel Junctions International-presentation

    IEEE International Magnetics Conference (INTERMAG 2011)　2011/04/25

  446. Size Dependence of CoFeB/MgO Perpendicular Anisotropy Magnetic Tunnel Junctions on Critical Current and Thermal Stability International-presentation

    佐藤英夫

    IEEE International Magnetics Conference (INTERMAG 2011)　2011/04/25

  447. Dependence of tunnel magnetoresistance in CoFeB-MgO based perpendicular anisotropy magnetic tunnel junctions on sputtering conditions and stack structures International-presentation

    水沼広太朗

    IEEE International Magnetics Conference (INTERMAG 2011)　2011/04/25

  448. Post-annealing effect on perpendicular magnetic anisotropy in CoFeB/MgO structure International-presentation

    小泉遼平

    IEEE International Magnetics Conference (INTERMAG 2011)　2011/04/25

  449. A Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with natural oxidation process International-presentation

    H. Yamamoto

    IEEE International Magnetics Conference (INTERMAG 2011)　2011/04/25

  450. Domain wall motion induced by electric current in CoFeB/MgO wire with perpendicular magnetic anisotropy International-presentation

    S. Fukami

    IEEE International Magnetics Conference (INTERMAG 2011)　2011/04/25

  451. Spintronics based Nonvolatile Electronics International-presentation

    2011 Frontier of Spintronics/Nanoelectronics Workshop　2011/04/24

  452. Perpendicular Anisotropy at MgO-CoFeB Interface for High Performance Spintronics Devices International-presentation

    Korean Physical Society　2011/04/13

  453. 電界による(Ga,Mn)As強磁性ナノドット配列の形成

    千葉大地

    第58回応用物理学会学術講演会　2011/03/24

  454. Ta/Co40Fe40B20/MgO接合における電界による垂直磁気異方性変調の膜厚及び熱処理温度による最適化

    金井駿

    第58回応用物理学会学術講演会　2011/03/24

  455. 積層フェリ自由層を有するトンネル接合の面直磁場印加スピントルクダイオード効果

    井波暢人

    第58回応用物理学会学術講演会　2011/03/24

  456. 垂直CoFeB/MgO磁気トンネル抵抗素子の書き込み電流と熱安定性の素子サイズ依存性

    佐藤英夫

    第58回応用物理学会学術講演会　2011/03/24

  457. BリッチなCo-Fe-B/MgO/Co-FeB擬スピンバルブの微細組織解析

    小塚雅也

    第58回応用物理学会学術講演会　2011/03/24

  458. CoFeB-MgO垂直磁気異方性MTJのTMR特性に及ぼす成膜条件の影響

    水沼広太朗

    第58回応用物理学会学術講演会　2011/03/24

  459. 垂直磁気異方性CoFeB/MgO積層構造における磁区構造

    山ノ内路彦

    第58回応用物理学会学術講演会　2011/03/24

  460. CoFeB層厚の異なるMgO/CoFeB構造における磁気特性の熱処理温度依存性

    小泉遼平

    第58回応用物理学会学術講演会　2011/03/24

  461. AlGaAs/GaAsダブルヘテロ構造における電子スピン緩和時間の細線方向に対する依存性

    石原 淳

    第58回応用物理学会学術講演会　2011/03/24

  462. MgO-MTJs with Application to VLSI International-presentation

    American Physical Society　2011/03/21

  463. Perpendicular 40 nm MgO-CoFeB Magnetic Tunnel Junctions International-presentation

    German Physical Society　2011/03/14

  464. Toward new paradigm for semiconductor LSI of the "Post-Moore" ear International-presentation

    8th ITEC Int. Conf. on Overcoming Two "Ends"　2011/03/04

  465. Spintronics Meets VLSI, toward nonvolatile electronics International-presentation

    First Outreach Program, Int. Symp. on Innovative Nanoelectronics & Systems　2011/02/16

  466. Materials design and science of magnetic tunnel junctions with perpendicular anisotropy electrodes for VLSIs International-presentation

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  467. Temperature dependence of domain patterns observed in demagnetized CoFeB/MgO films with perpendicular anisotropy International-presentation

    山ノ内路彦

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  468. A post oxidation process of Mg layer for MgO barrier magnetic tunnel junctions International-presentation

    H. Yamamoto

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  469. Spin torque diode effect of magnetic tunnel junction with synthetic ferrimagnetic free layer International-presentation

    N. Inami

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  470. Influences of Boron composition on tunnel magnetoresistance properties of double-MgO-barrier magnetic tunnel junctions International-presentation

    甘華東

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  471. Annealing effect on perpendicular magnetic anisotropy of CoFeB/MgO structure International-presentation

    佐藤英夫

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  472. Annealing stability for tunnel magnetoresistance in MgO-CoFeB based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers International-presentation

    水沼広太朗

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  473. Modulation of magnetic anisotropy in Ta/Co40Fe40B20/MgO by electric fields: thickness and annealing temperature dependences International-presentation

    金井 駿

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  474. Buffer layer dependence of magnetic domain wall creep in (Ga,Mn)As International-presentation

    鈴木淳士

    1st CSIS Int. Symp. on Spintronics-based VLSIs and 7th RIEC Int. Workshop on Spintronics　2011/02/03

  475. Perpendicular Magnetic Anisotropy at the Interface of MgO-CoFeB International-presentation

    38th Conf on the Physics & Chemistry of Surface & Interfaces (PCSI38)　2011/01/16

  476. 歪(110)GaAs量子井戸中における四重極分裂幅の磁場依存性

    特定領域「スピン流の創出と制御」研究会　2011/01/06

  477. n-GaAs/MgO/CoFe接合におけるスピン蓄積とその電気的検出

    小林裕臣, L. Fleet, 廣畑貴文

    第15回半導体スピン工学の基礎と応用(PASPS-15)　2010/12/20

  478. 電界による(Ga,Mn)As強磁性ナノドットの形成

    千葉大地

    第15回半導体スピン工学の基礎と応用(PASPS-15)　2010/12/20

  479. (110)GaAs量子井戸における電界誘起の四重極分裂

    小野真証, 佐藤源輝, 石原淳, 松坂俊一郎

    第15回半導体スピン工学の基礎と応用(PASPS-15)　2010/12/20

  480. CoFeB/MgO/CoFeB接合にける垂直磁気異方性とスピン注入磁化反転

    東北大学 電気通信研究所 共同プロジェクト研究 (H22／A03) 研究会　2010/12/17

  481. Magnetic Tunnel Junction for Nonvolatile CMOS Logic International-presentation

    2010 Int. Electron Devices Meeting (IEDM)　2010/12/06

  482. Perpendicular MgO-CoFeB Magnetic Tunnel Junction International-presentation

    6th Taiwan Int. Conf. on Spintronics (TICSpin)　2010/12/01

  483. 40nm垂直異方性磁気トンネル接合

    東北大学電気通信研究所共同プロジェクト研究会「ナノスケールのゆらぎ・電子相関制御に基づく新規ナノデバイス」　2010/11/26

  484. MgO/CoFeB構造における磁気異方性の熱処理温度依存性

    小泉遼平, 佐藤英夫, 山ノ内路彦, 水沼広太郎, 三浦勝哉, 甘華東

    第65回応用物理学会東北支部学術講演会　2010/11/25

  485. Magnetic Tunnel Junction for Integrated Circuits: Scaling and Beyond International-presentation

    55th Annual Conf. on Magnetims & Magnetic Materials (MMM2010)　2010/11/14

  486. Stack structures for realization of high annealing stability in perpendicular magnetic tunnel junctions with CoFe/Pd multilayer electrodes International-presentation

    水沼広太朗

    55th Annual Conf. on Magnetims & Magnetic Materials (MMM2010)　2010/11/14

  487. The dependence of the magnetic anisotropy on buffer layer and MgO thickness in Co20Fe60B20/MgO structures for magnetic tunnel junction International-presentation

    山ノ内路彦

    55th Annual Conf. on Magnetims & Magnetic Materials (MMM2010)　2010/11/14

  488. Electrical detection of spin polarized electrons in n-GaAs/MgO/CoFe junctions International-presentation

    H. Kobayashi

    55th Annual Conf. on Magnetims & Magnetic Materials (MMM2010)　2010/11/14

  489. Control of magnetic anisotropy in CoFeB by capping layer for current induced magnetization switching International-presentation

    H. Yamamoto, J. Hayakawa, K. Ito, K. Miura, H. Matsuoka

    55th Annual Conf. on Magnetims & Magnetic Materials (MMM2010)　2010/11/14

  490. Spin-torque diode effect in magnetic tunnel junctions with synthetic ferrimagnetic layers International-presentation

    N. Inami, H. Naganuma, M. Oogane, Y. Ando

    55th Annual Conf. on Magnetims & Magnetic Materials (MMM2010)　2010/11/14

  491. High tunnel magnetoresistance, low current switching and high thermal stability in 40-nm-diameter CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy International-presentation

    K. Miura, M. Yamanouchi, H. Yamamoto, K. Mizunuma, H. Gan, J. Hayakawa, R. Koizumi, M. Endo, S. Kanai

    55th Annual Conf. on Magnetims & Magnetic Materials (MMM2010)　2010/11/14

  492. n型GaAsにおけるスピンホール効果の光学的評価ドーピング濃度依存性

    松坂俊一郎

    物性科学領域横断研究会 凝縮系科学の最前線　2010/11/13

  493. 垂直磁気異方性電極磁気トンネル接合の進展

    応用物理学会応用電子物性分科会スピントロニクス研究会　2010/11/02

  494. スピントロニクスデバイスの原理と最新動向

    日本学術振興会 未踏・ナノデバイステクノロジー第151委員会、シリコン超集積化システム第165委員会合同研究会　2010/10/29

  495. MgO-based Magnetic Tunnel Junctions for Integrated Cuicuit Applications International-presentation

    Int. Conf. on Magnetic Materials (ICMM2010)　2010/10/25

  496. Spin-orbit effective field in (Ga,Mn)As International-presentation

    遠藤将起

    The 3rd Student Organizing International Mini-Conference on Information Electronics Systems　2010/10/19

  497. Quadrupolar splitting dependence of nuclear spin coherence in an n-(110) GaAs quantum well International-presentation

    小野真証

    The 3rd Student Organizing International Mini-Conference on Information Electronics Systems　2010/10/19

  498. Intersubband optical transition measurement in InAs/AlSb quantum cascade laser using fourier-transform photocurrent spectrscopy International-presentation

    Eli Christopher Inocencio Enobio

    The 3rd Student Organizing International Mini-Conference on Information Electronics Systems　2010/10/19

  499. Control of the exciton fine structure splitting in GaAs single quantum dots using vertical gate voltage International-presentation

    Mohsen Ghali

    The 3rd Student Organizing International Mini-Conference on Information Electronics Systems　2010/10/19

  500. Electric-field dependence of magnetic anisotropy in as-deposited and annealed CoFeB/MgO structures International-presentation

    金井 駿

    The 3rd Student Organizing International Mini-Conference on Information Electronics Systems　2010/10/19

  501. TMR properties and annealing stability in MgO barrier MTJs with CoFe/Pd perpendicular anisotropy multilayer electrodes International-presentation

    水沼広太朗

    The 3rd Student Organizing International Mini-Conference on Information Electronics Systems　2010/10/19

  502. Nonvolatile CMOS VLSI with Spintronics International-presentation

    8th Int. Workshop on Future Information Processing Technologies (IWFIPT)　2010/10/18

  503. Recent Progress on MgO-barrier Magnetic Tunnel Junctio International-presentation

    Seminar at National Taiwan University　2010/10/01

  504. MgO-based Magnetic Tunnel Junction for CMOS VLSI Integration International-presentation

    Int. Conf. on Nanoscale Magnetism　2010/09/28

  505. Magnetic field dependence of quadrupoar splitting and nuclear spin coherence in a (110) GaAs/AlGaAs quantum well International-presentation

    J. Ishihara, M. Ono, G. Sato, S. Matsuzaka

    Intl Conf. on Solid State Devices and Materials　2010/09/21

  506. Physics and Material Science of MgO-CoFeB Structures International-presentation

    Int. Symp. on Metallic Multilayers(MML)　2010/09/19

  507. Tunnel magnetoresistance properties of double MgO-barrier magnetic tunnel junctions with different free-layer alloy compositions and structures International-presentation

    甘華東

    Int. Symp. on Metallic Multilayers(MML)　2010/09/19

  508. CoFeBにおける磁気異方性電界変調に及ぼすアニールの影響

    金井駿

    第71回応用物理学会学術講演会　2010/09/14

  509. 抵抗極プロットを用いた(Ga,Mn)AsにおけるSOI有効磁界の検出

    遠藤将起

    第71回応用物理学会学術講演会　2010/09/14

  510. (Ga,Mn)Asにおける電流誘起磁壁移動の膜厚依存性

    鈴木淳士

    第71回応用物理学会学術講演会　2010/09/14

  511. n-GaAs/MgO/CoFe接合を用いたスピン蓄積の電気的検出

    小林裕臣

    第71回応用物理学会学術講演会　2010/09/14

  512. MgO障壁磁気トンネル接合における磁化反転磁場のバイアス電圧依存性

    三浦勝哉

    第71回応用物理学会学術講演会　2010/09/14

  513. 積層フェリ構造を有するトンネル接合のスピントルクダイオード効果

    井波暢人

    第71回応用物理学会学術講演会　2010/09/14

  514. 垂直磁気異方性CoFe/Pd多層膜電極を用いたMgO障壁磁気トンネル接合のトンネル磁気抵抗特性と積層構造

    水沼広太朗

    第71回応用物理学会学術講演会　2010/09/14

  515. n型GaAsにおけるスピンホール効果の光学的評価

    松坂俊一郎

    第71回応用物理学会学術講演会　2010/09/14

  516. n-(110)GaAs単一量子井戸中における四重極分裂幅のゲート電圧依存性

    小野真証

    第71回応用物理学会学術講演会　2010/09/14

  517. GaAs量子井戸における核スピン四重極分裂幅とコヒーレンス時間の磁場依存性

    石原 淳

    第71回応用物理学会学術講演会　2010/09/14

  518. スピントロニクス: More and Beyond

    第71回応用物理学会学術講演会　2010/09/14

  519. 垂直磁気異方性電極MTJにおける強磁性層構造のTMR特性に及ぼす影響

    水沼広太朗, 山ノ内路彦, 甘華東, 三浦勝哉, 小泉遼平

    第34回日本磁気学会学術講演会　2010/09/04

  520. Ferromagnetic III-V Semiconductor Spintronics International-presentation

    16th International Conference on Molecular Beam Epitaxy (MBE2010)　2010/08/22

  521. Electric field induced magnetization switching in a (Ga,Mn)As field effect structure International-presentation

    千葉大地

    6th Int. Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors　2010/08/01

  522. Inverse spin Hall effect in a (Ga,Mn)As/p-GaAs bilayer structure International-presentation

    6th Int. Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors　2010/08/01

  523. Spin resonance and spin-orbit coupling effects in two dimensional hole systems in GaAs/AlGaAs(311)A heterostructures International-presentation

    S. Teraoka

    6th Int. Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors　2010/08/01

  524. Strain dependence of nuclear spin coherent time in a GaAs quantum well International-presentation

    佐藤源輝

    6th Int. Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors　2010/08/01

  525. Magnetic field dependence of nuclear quadrupole interaction in a (110)GaAs quantum well International-presentation

    石原淳

    6th Int. Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors　2010/08/01

  526. Characterization of spin-orbit interaction induced effectivev magnetic fields in (Ga,Mn)As by resistance polar plot International-presentation

    M. Endo

    Int. Conf. on Physics of Semiconductors (ICPS)　2010/07/25

  527. Nuclear spin coherence time in a strained GaAs quantum well International-presentation

    M. Ono, G. Sato, J. Ishihara, S. Matsuzaka

    Int. Conf. on Physics of Semiconductors (ICPS)　2010/07/25

  528. GaAs量子井戸における核スピンコヒーレンスの磁場依存性

    石原淳

    第29回電子材料シンポジウム　2010/07/14

  529. 面内磁場中におけるInAs/AlSb量子カスケードレーザの発振特性

    佐藤啓貴

    第29回電子材料シンポジウム　2010/07/14

  530. (Ga,Mn)Asにおける電流誘起磁壁移動の膜厚依存性

    鈴木淳士

    第29回電子材料シンポジウム　2010/07/14

  531. 電子材料とスピントロニクス

    第29回電子材料シンポジウム　2010/07/14

  532. Current-induced magnetization switching in MTJs with high TMR ratio International-presentation

    甘華東

    Int. Symp. on Advanced Magnetic Materials and Applications　2010/07/12

  533. TMR Properties of Perpendicular MTJs with Thin Pd Based Multilayers International-presentation

    水沼広太朗

    Int. Symp. on Advanced Magnetic Materials and Applications　2010/07/12

  534. High spin-filter efficiency in a Co ferrite fabricated by a thermal oxidation International-presentation

    金井 駿

    Int. Symp. on Advanced Magnetic Materials and Applications　2010/07/12

  535. Magnetization reversal in (Ga,Mn)As by using spin-orbit interaction effective magnetic field International-presentation

    遠藤将起

    Int. Symp. on Advanced Magnetic Materials and Applications　2010/07/12

  536. 歪GaAs量子井戸中における核スピンコヒーレンスの磁場依存性

    小野真証, 石原淳, 佐藤源輝, 松坂俊一郎

    特定領域「スピン流の創出と制御」研究会　2010/06/23

  537. GaAs量子井戸中における核スピンコヒーレンスの四重極分裂幅依存性

    石原淳, 佐藤源輝, 松坂俊一郎

    特定領域「スピン流の創出と制御」研究会　2010/06/23

  538. Gating Ferromagnetic Semiconductor (Ga,Mn)As International-presentation

    9th Int. Workshop on Surface, Interface and Thin Film Physics　2010/06/16

  539. Spintronics for Nonvolatile Silicon Nanoelectronics International-presentation

    International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)　2010/06/03

  540. Exploring Magnetism with Ferromagnetic III-V Semiconductors International-presentation

    International Conference on Core Research and Engineering Science of Advanced Materials (Global COE Program) & 3rd International Conference on Nanospintronics Design and Realization (3rd-ICNDR)　2010/05/30

  541. Gating Magnetism of Ferromagnetic Semiconductors International-presentation

    International Conference on Core Research and Engineering Science of Advanced Materials (Global COE Program) & 3rd International Conference on Nanospintronics Design and Realization (3rd-ICNDR)　2010/05/30

  542. Electrical Gating of Magnetism in (Ga,Mn)As and Beyond International-presentation

    Huangkun Semiconductor Science and Technology Forum　2010/05/21

  543. Experimentalist of the Week: Magnetic Semiconductors International-presentation

    Progress in Spintronics and Graphene Research (Beijing, Kavli Institute for Theoretical Physics　2010/05/20

  544. Experimentalist of the Week: Magnetic Random (Access Memories + discussion) International-presentation

    Progress in Spintronics and Graphene Research　2010/05/20

  545. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009　2010/05/19

  546. Spintronics Meets CMOS VLS International-presentation

    Tohoku University, Japan-National Chiao Tung University & National Nano Device Laboratories, Taiwan Joint Workshop on Nano-Process and Nano-Device　2010/04/23

  547. (Ga,Mn)AsにおけるDresselhausスピン軌道相互作用有効磁界

    遠藤将起

    第57回応用物理学会　2010/03/17

  548. 2重MoO障壁CoFeB電極MTJのトンネル磁気抵抗特性と積層構造

    第57回応用物理学会　2010/03/17

  549. CoFe/Pd多層膜を電極に用いた垂直MTJにおけるTMR特性と熱処理耐性

    水沼広太朗

    第57回応用物理学会　2010/03/17

  550. キャパシタ構造を用いたCoFeBの磁気特性の電界制御

    金井駿

    第57回応用物理学会　2010/03/17

  551. 金属プラズモン導波路構造を有するテラヘルツ量子カスケードレーザ

    第57回応用物理学会　2010/03/17

  552. 電子濃度の異なるn型GaAsにおけるスピンホール効果の評価

    第57回応用物理学会　2010/03/17

  553. 半導体量子井戸中における核スピン緩和時間の歪依存性

    小野真証

    第57回応用物理学会　2010/03/17

  554. Nanoelectronics Meets Spintronics International-presentation

    3rd GCOE International Symposium on Photonics and Electronics Science and Engineering　2010/03/12

  555. 金属導波路構造GaAsテラヘルツ量子カスケードレーザの発振特性

    テラヘルツ電磁波技術研究会「テラヘルツ電子デバイスの新展開」　2010/02/25

  556. Electric-field Effects on Magnetic and Transport Properties of (Ga,Mn)As International-presentation

    16th International Winterschool, New Developments in Solid State Physics　2010/02/22

  557. Carrier Concentration Dependence of Spin Hall Effect in n-GaAs International-presentation

    6th RIEC International Workshop on Spintronics　2010/02/05

  558. Change of Magnetic Properties in Co40Fe40B20 Induced by Electric Field International-presentation

    遠藤将起

    6th RIEC International Workshop on Spintronics　2010/02/05

  559. Effect of CoFeB Insertion and Pd Layer Thicknesses on TMR Properties in Perpendicular MTJs with MgO Barrier and CoFe/Pd Multilayers International-presentation

    水沼広太朗

    6th RIEC International Workshop on Spintronics　2010/02/05

  560. Effect of Free Layer Structures on Tunnel Magnetoresistance for Double MgO Barrier Magnetic Tunnel Junctions International-presentation

    6th RIEC International Workshop on Spintronics　2010/02/05

  561. Electric-field Effect on Thin (Ga,Mn)As Layers International-presentation

    6th RIEC International Workshop on Spintronics　2010/02/05

  562. Hole Spin Resonance and Spin-orbit Interaction in p-GaAs/AlGaAs(311)A Heterostructure International-presentation

    寺岡総一郎

    6th RIEC International Workshop on Spintronics　2010/02/05

  563. Spin Transfer Torque Switching in Magnetic Tunnel Junctions with CoFeB-based Synthetic Ferrimagnetic Free Layers International-presentation

    伊藤顕知

    6th RIEC International Workshop on Spintronics　2010/02/05

  564. Strain Dependence of Nuclear Spin Relaxation Time in a GaAs Quantum Well International-presentation

    小野真証

    6th RIEC International Workshop on Spintronics　2010/02/05

  565. Thickness Dependence of Magnetic Anistropy in CoFeB under Electric Fields International-presentation

    金井駿

    6th RIEC International Workshop on Spintronics　2010/02/05

  566. Tunneling Spectroscopy of CoFeB/MgO/CoFeB Pseudo Spin-Valve MTJs with Ultrahigh TMR Ratio International-presentation

    6th RIEC International Workshop on Spintronics　2010/02/05

  567. Intersubband transitions in ZnO quantum wells International-presentation

    SPIE Photonics West　2010/01/23

  568. Effect of synthetic ferrimagnetic free layer structure on the thermal stability in MgO-barrier magnetic tunnel junctions International-presentation

    11th Joint MMM-Intermag Conference　2010/01/18

  569. Material Science and Physics of Large TMR and Spin-transfer Switching in MgO-based MTJs for CMOS logic integration International-presentation

    11th Joint MMM-Intermag Conference　2010/01/18

  570. GaAs量子井戸中における核スピン緩和の四重極分裂幅依存性

    特定領域成果報告会「スピン流の創出と制御」　2010/01/13

  571. (Ga,Mn)Asにおけるスピン軌道有効磁界を用いた磁化方向制御

    遠藤将起

    第14回半導体スピン工学の基礎と応用(PASPS-14)　2009/12/21

  572. GaAs量子井戸中における核スピン緩和の四重極分裂幅依存性

    小野真証

    第14回半導体スピン工学の基礎と応用(PASPS-14)　2009/12/21

  573. n型GaAsにおけるスピンホール効果のキャリア濃度依存性

    第14回半導体スピン工学の基礎と応用(PASPS-14)　2009/12/21

  574. ゲート付きGaAs/AlGaAs単一量子井戸を用いたゼロ磁場における高移動度2次元電子スピン歳差運動の光学検出

    高橋卓也

    第14回半導体スピン工学の基礎と応用(PASPS-14)　2009/12/21

  575. 二次元正孔系のスピン共鳴とゼロ磁場スピン分裂

    寺岡総一郎

    第14回半導体スピン工学の基礎と応用(PASPS-14)　2009/12/21

  576. A Disturbance-Free Read Scheme and a Compact Stochastic-Spin-Dynamics-Based MTJ Circuit Model for Gb-scale SPRAM International-presentation

    K. Ono(Hitachi

    International Electron Devices meeting　2009/12/07

  577. n-(110)GaAs/AlGaAs単一量子井戸における核スピンダイナミクスのゲート電圧依存性

    小林裕臣

    応用物理学会東北支部学術講演会　2009/12/03

  578. 磁性積層構造における逆スピンホール効果の温度依存性

    小池 奨

    応用物理学会東北支部学術講演会　2009/12/03

  579. Multi pulse operation and optical detection of nuclear spin coherence in a quantum well International-presentation

    Sweden-Japan Workshop on Quantum Nanoelectronics (QNANO)　2009/11/13

  580. 金属導波路構造GaAsテラヘルツ量子カスケードレーザの発振特性

    東北大学電気通信研究所共同プロジェクト研究会「量子カスケードレーザの高性能化と応用に関する研究」　2009/11/04

  581. Electrical control of properties of (Ga,Mn)As using electric-double layer transistor International-presentation

    遠藤将起

    The 2nd RIEC-CNSI Workshop on Nanoelectronics, Spintronics and Photonics　2009/10/22

  582. Multi-pulse control and optical detection of nuclear spin coherence in GaAs/AlGaAs quantum well International-presentation

    The 2nd RIEC-CNSI Workshop on Nanoelectronics, Spintronics and Photonics　2009/10/22

  583. Nuclear spin coherence in a Schottky gated n-GaAs quantum well International-presentation

    小野真証

    The 2nd RIEC-CNSI Workshop on Nanoelectronics, Spintronics and Photonics　2009/10/22

  584. Properties of Cu-based metal-metal waveguide THz quantum cascade lasers fabricated by radio frequency sputtering method International-presentation

    The 2nd RIEC-CNSI Workshop on Nanoelectronics, Spintronics and Photonics　2009/10/22

  585. Spin resonance and zero field spin splitting of two dimensional hole system in (311)A GaAs/GaAs heterostructure International-presentation

    寺岡総一郎

    The 2nd RIEC-CNSI Workshop on Nanoelectronics, Spintronics and Photonics　2009/10/22

  586. スピントロニクス素子を用いた論理集積回路

    東北大学電気通信研究所共同プロジェクト研究会「半導体サイエンスと半導体テクノロジーの融合～技術を先導する半導体サイエンスを目指して～」　2009/10/16

  587. Annealing Temperature Dependence of Critical Current and Thermal Stability Factor in MgO-Barrier Magnetic Tunnel Junctions with CoFeB based Synthetic Ferrimagnetic Recording Layer International-presentation

    早川 純

    2009 International Conference on Solid State Devices and Materials (SSDM)　2009/10/07

  588. CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio International-presentation

    水沼広太朗

    2009 International Conference on Solid State Devices and Materials (SSDM)　2009/10/07

  589. CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Low Resistance-Area Product and High Magnetoresistance International-presentation

    2009 International Conference on Solid State Devices and Materials (SSDM)　2009/10/07

  590. Dielectric breakdown in MgO-barrier magnetic tunnel junctions with a CoFeB based synthetic ferrimagetic recording layer International-presentation

    山ノ内路彦

    2009 International Conference on Solid State Devices and Materials (SSDM)　2009/10/07

  591. Electrical Control of the Magnetic Properties in (Ga,Mn)As Channel in Electric Double Layer Transistor International-presentation

    遠藤将起

    2009 International Conference on Solid State Devices and Materials (SSDM)　2009/10/07

  592. Fine-Grain Power-Gating Scheme of a CMOS/MTJ-Hybrid Bit-Serial Ternary Content-Addressable Memory International-presentation

    松永翔雲

    2009 International Conference on Solid State Devices and Materials (SSDM)　2009/10/07

  593. ThePerformance of Magnetic Tunnel Junction Integrated on the Back-end Metal Line of CMOS Circuits International-presentation

    遠藤哲郎

    2009 International Conference on Solid State Devices and Materials (SSDM)　2009/10/07

  594. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Yorktown Heights)　2009/10/06

  595. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Tallahasse)　2009/10/05

  596. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Paris)　2009/10/02

  597. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Grenoble)　2009/10/01

  598. Magnets of Ferromagnetism in Semiconductors International-presentation

    The Royal Society Scientific Discussion Meeting -The Spin on Electronics-　2009/09/28

  599. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Madrid)　2009/09/25

  600. Spintronics: Electrical Control of Magnetization International-presentation

    10th International Conference on Atomically Controlled Surfaces, Interfaces, and nanostructures (ACSIN 10)　2009/09/21

  601. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (York)　2009/09/11

  602. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Southampton)　2009/09/09

  603. (Ga,Mn)Sb薄膜における強磁性の電界制御

    西谷 雄

    第70回応用物理学会　2009/09/08

  604. 2DEG移動度100,000cm2V-1s-1を越えるMgZnO/ZnO界面の実現

    塚崎敦

    第70回応用物理学会　2009/09/08

  605. CoFe/Pd多層膜電極を用いた垂直MTJのTMR特性に及ぼす強磁性層挿入の影響

    水沼広太朗

    第70回応用物理学会　2009/09/08

  606. Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

    松永翔雲

    第70回応用物理学会　2009/09/08

  607. 磁気トンネル接合における電流誘起フィールドトルクの直接測定

    伊藤顕知

    第70回応用物理学会　2009/09/08

  608. 高反平行結合強度を有する積層フェリ構造を用いたMTJにおけるスピン注入磁化反転

    西村真之

    第70回応用物理学会　2009/09/08

  609. 銅をベースとした金属・金属導波路テラヘルツ量子カスケードレーザの製作

    林宗澤

    第70回応用物理学会　2009/09/08

  610. 半導体量子井戸中における核スピンダイナミクスの歪依存性

    小野真証

    第70回応用物理学会　2009/09/08

  611. Spintronics: Nanoscience and Nanoelectronics International-presentation

    19th Soft Magnetic Materials Conference (SMM19)　2009/09/06

  612. Conduction to valence band offset ratio of ZnO/MgZnO Quantum Wells International-presentation

    10th International Conference on Intersubband Transitions in Quantum Wells　2009/09/06

  613. Fabrication of Copper Metal-Metal THz Waveguide by Radio Frequency Sputtering Method International-presentation

    10th International Conference on Intersubband Transitions in Quantum Wells　2009/09/06

  614. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Tuscaloosa)　2009/09/04

  615. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetics Society Distinguished Lecture for 2009 (Argonne)　2009/09/03

  616. Ferromagnetism in III-V Semiconductors International-presentation

    36th International Symposium on Compound Semiconductors (ISCS2009)　2009/08/30

  617. Magnetic Tunnel Junctions: Beyond Nonvolatile Memories International-presentation

    Nano and Giga Challenges in Electronics, Photonics and Renewable Energy Simposium and Summer School (NGC200)　2009/08/10

  618. 不純物ドープ半導体量子井戸中における核スピン緩和時間の電界制御

    特定領域「スピン流の創出と制御」研究会　2009/08/09

  619. Transport properties of double MgO barrier magnetic tunnel junctions with CoFeB electrodes International-presentation

    International Conference on Magnetism　2009/07/26

  620. Effects of annealing temperature on giant tunnel magnetoresistance ratio and tunneling spectroscopy of CoFeB/MgO/CoFeB magnetic tunnel junctions International-presentation

    20th International Colloquium on Magnetic Films and Surfaces　2009/07/20

  621. SQUID magnetometry of the effect of electric-field on magnetization of (Ga,Mn)As International-presentation

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  622. Epitaxy and characterization of Co doped ZnO on ZnO substrate International-presentation

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  623. Optical detection of zero-field spin precession of high mobility two dimensional electron gas in a gated GaAs/AlGaAs quantum well International-presentation

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  624. Multi pulse operation and optical detection of nuclear spin coherence in a quantum well International-presentation

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  625. Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy International-presentation

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  626. Fabrication and operation of a metal-metal waveguide GaAs terahertz quantum cascade laser International-presentation

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  627. Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film International-presentation

    西谷

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  628. Width and temperature dependences of lithographically induced magnetic anisotropy in (Ga,Mn)As wires International-presentation

    小川(新田研

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  629. Electric-field control of the anomalous Hall effect in (Ga,Mn)As thin films International-presentation

    千葉

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  630. Two-color pump-probe measurements of intersubband excitonic interactions in GaAs/AlGaAs quantum wells International-presentation

    森田健

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  631. Electric-field manipulation of magnetization vector in (Ga,Mn)As International-presentation

    千葉

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  632. Spin resonance of two dimensional hole system International-presentation

    寺岡総一郎

    18th Electronic Properties of 2 Dimensional Systems and 14th Modulated Semiconductor Structures　2009/07/19

  633. Control of Spin States in Semiconductors International-presentation

    The 3rd International Symposium on Information Electronics Systems　2009/07/13

  634. Thermally activated longitudinal optical phonon scattering time of a GaAs/AlGaAs THz quantum cascade laser emitting at 3.8 THz International-presentation

    林

    14th International Conference on Narrow Gap Semiconductors and Systems　2009/07/13

  635. Control of Spin States in Semiconductors International-presentation

    3rd International Symposium on Information Electronics Systems　2009/07/13

  636. n-(110)GaAs単一量子井戸における核スピン緩和時間のゲート電圧依存性

    第28回電子材料シンポジウム　2009/07/08

  637. 磁性積層構造における逆スピンホール効果の温度異存性

    第28回電子材料シンポジウム　2009/07/08

  638. 薄層MgO障壁CoFeB/MgO/CoFeB MTJのTMR特性と構造

    第28回電子材料シンポジウム　2009/07/08

  639. 20 Years of III-V DMS – An Introduction International-presentation

    5th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH V)　2009/07/07

  640. Spintronics: Nanoscience and Nanoelectronics International-presentation

    21th Annual Conference on Magnetics and Cross-Strait Magnetism Conference (TAMT), IEEE Magnetic Society Distinguished Lecture for 2009　2009/06/24

  641. Hybrid CMOS/Magnetic Tunnel Junction Approach for Nonvolatile Integrated Circuits International-presentation

    2009 Symposia on VLSI Technology and Circuits　2009/06/15

  642. 32-Mb 2T1R SPRAM with Localized Bi-Directional Write Driver and ‘1’/‘0’ Dual-Array Equalized Reference Cell International-presentation

    R. Takemura(Hitachi

    2009 Symposia on VLSI Technology and Circuits　2009/06/15

  643. SPRAM with Large Thermal Stability for High Immunity to Read Disturbance and Long Retention for High-Temperature Operation International-presentation

    K.Ono(Hitachi

    2009 Symposia on VLSI Technology and Circuits　2009/06/15

  644. Magnetic Tunnel Junction for Next Generation Intergrated Circuits International-presentation

    2009 Advanced Research Workshop, Future Trends in Microelectronics　2009/06/14

  645. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009　2009/06/08

  646. Electrical Magnetization Vector manipulation in (Ga,Mn)As International-presentation

    Spin-Up 2009　2009/05/31

  647. Electric-Field Manipulation of Magnetization Direction International-presentation

    Frontiers in Nanoscale Science and Technology, Nanoelectronics & Nanophotonics, Spintronics & Quantum Information　2009/05/29

  648. Electric Field Manipulation of Magnetic Anisotropy in Ferromagnetic Semiconductors International-presentation

    IEEE International Magnetics Conference　2009/05/04

  649. Perpendicular magnetic tunnel junctions with CoFe/Pd multilayer electrodes and MgO barrier International-presentation

    IEEE International Magnetics Conference　2009/05/04

  650. Tunneling spectroscopy of CoFeB/MgO/CoFeB MTJs with ultrahigh TMR ratio International-presentation

    IEEE International Magnetics Conference　2009/05/04

  651. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009 (Danver)　2009/04/23

  652. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009 (San Diego)　2009/04/22

  653. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009 (San Jose)　2009/04/21

  654. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009 (Santa Clara)　2009/04/21

  655. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009　2009/04/20

  656. Manipulation of Magnetization Direction by Electric Fields International-presentation

    Spin Current 2009(SpinAps)　2009/04/17

  657. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009 (Carvallis)　2009/04/16

  658. Spintronics: Nanoscience and Nanoelectronics International-presentation

    IEEE Magnetic Society Distinguished Lecture for 2009 (Sendai)　2009/04/13

  659. 垂直磁化トンネル接合電極としてのCoFe/Pd多層膜の検討

    第56回応用物理学会　2009/03/30

  660. CoFeB/MgO/CoFeB保磁力差型MTJの低RA領域でのTMR特性

    第56回応用物理学会　2009/03/30

  661. 高移動度2次元電子の内部有効磁場によるスピン歳差運動の光学検出

    第56回応用物理学会　2009/03/30

  662. 不純物ドープ半導体量子井戸中における核スピン緩和時間の電界制御

    第56回応用物理学会　2009/03/30

  663. (Ga,Mn)As薄膜における強磁性転移温度の電界制御

    第56回応用物理学会　2009/03/30

  664. (Ga,Mn)Asの異常ネルンスト効果

    第56回応用物理学会　2009/03/30

  665. (Ga,Mn)As中の磁壁の磁場誘起クリープ

    第56回応用物理学会　2009/03/30

  666. (Ga,Mn)Sbの低温MBE成長と磁気特性評価

    第56回応用物理学会　2009/03/30

  667. Electric-Field Manipulation of Magnetization Vector Direction International-presentation

    American Physical Society, March Meeting　2009/03/16

  668. 不揮発性論理素子実現のための課題

    科学技術未来戦略ワークショップ「次世代を拓くナノエレクトロニクス」　2009/03/09

  669. n-GaAs/AlGaAs量子井戸構造における核スピンの量子ゲート操作とその光検出

    特定領域研究会「スピン流の創出と制御」　2009/01/07

  670. Ferromagnetic III-V Semiconductors: Electrical Manipulation of Magnetism and Magnetization International-presentation

    Twenty Years of Spintronics Retrospective and Perspective　2008/12/08

  671. Electrical Control of Magnetism and Magnetization International-presentation

    D. Chiba

    Magnetic Single Nano-Object International School and Workshop (M-SNOW)　2008/11/23

  672. Electrical Manipulation of Magnetization Vector International-presentation

    Asian Conf. on Nanoscience and Nanotechnology (AsiaNano)　2008/11/03

  673. Exploring Ferromagnetism in III-V Semiconductors International-presentation

    23rd Nishinomiya-Yukawa Memorial Int. Workshop, Spin Transport in Condensed Matter (STCM)　2008/10/27

  674. Electric-Field Munipulation of Magnetization Vector -Toward Electric-Field Reversal- International-presentation

    D. Chiba

    CNSI-RIEC Workshop on Nanoelectronics, Spintronics and Photonics　2008/10/09

  675. Magnetic Tunnel Junction for Next Generation Integrated Circuits International-presentation

    4th Taiwan Int. Spintronics Conf. on Spintronics (TICSpin)　2008/10/02

  676. Electric-field manipulation of magnetization vector - Toward electric-field reversal- International-presentation

    The 4th Taiwan International Conference on Spintronics　2008/10/02

  677. Current-induced Magnetization Switching for Next Generation Integrated Circuits International-presentation

    SPINSWITCH Workshop "Spin Momentum Transfer"　2008/09/03

  678. Current Induced Magnetic Domain Wall Creep in Semiconductors International-presentation

    9th Int. Symp. on Foundations of Quantum Mechanics, In the Light of New Technology (ISQM-TOKYO 08)　2008/08/25

  679. Spintronics: Nanoscience and Nanoelectronics International-presentation

    Seminar on Magnetic Semiconductors　2008/08/15

  680. Electrically driven domain wall in (Ga,Mn)As International-presentation

    SPIE Optics + Photonics 2008, Nano Science + Engineering　2008/08/10

  681. Ferromagnetic III-V Semiconductors Physics and Material Science International-presentation

    5th Int. Conf. on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS V)　2008/08/03

  682. Control of Spins in Semiconductor Structures International-presentation

    2nd Int. Symp. on Information Electronics Systems　2008/07/14

  683. Control of Spins in Semiconductor Structures International-presentation

    2nd International Symposium on Information Electronics Systems　2008/07/14

  684. Ferromagnetic Semiconductors - Physics and Material Science International-presentation

    Summer School of Advanced Functional Materials　2008/07/08

  685. Spintronics: Nanoscience and Nanoelectronics International-presentation

    UCSB Seminar　2008/05/29

  686. Ferromagnetic III-V Semiconductors International-presentation

    CNSI/FENA Seminar　2008/05/27

  687. Domain Wall in (Ga,Mn)As International-presentation

    Workshop on Spin and Charge Transport in Nanostructures(SPINOR2008)　2008/05/14

  688. Spin Manipulation in Semiconductors and Metals International-presentation

    IEEE International Magnetic Conference (INTERMAG08)　2008/05/04

  689. Electrical Manipulation of Magnetic Properties in (Ga,Mn)As International-presentation

    D. Chiba

    Workshop on Recent Advances of Low Dimensional Structures and Devices (WRA-LDSD)　2008/04/07

  690. Coherent Control of Nuclear Spins in GaAs Quantum Wells

    NIMS&東工大合同シンポジウム「凝縮系の超高速現象とコヒーレント制御」　2008/02/21

  691. Spin Current-Induced Domain Wall Motion in (Ga,Mn)As International-presentation

    11th Sanken International Symposium, Sanken Nanotech Symposim, Sanken MSTEC Symposium　2008/02/04

  692. Ferromagnetic III-V Semiconductors International-presentation

    International Workshop and Conference on Photonics and Nanotechnology (ICPN)　2007/12/16

  693. University-Classes Domain Wall Creep Motion in (Ga,Mn)As International-presentation

    International Symposium, the Winter Conference of Korean Magnetic Society　2007/12/06

  694. Ferromagnetic Semiconductors for Spintronics International-presentation

    9th Northeastern Asian Symposium on Advanced Material　2007/12/05

  695. Spin-current induced dynamics in a ferromagnetic semiconductor domain wall International-presentation

    3rd Seeheim Conference on Magnetism　2007/08/26

  696. Ferromagnetism in III-V semiconductors International-presentation

    10th Asia Pacific Physics Conference (APPC10)　2007/08/21

  697. 半導体スピントロニクスの全て

    第45回茅コンファレンス -最近のスピン科学とスピン技術-　2007/08/19

  698. Spin-current induced domain wall creep motion in ferromagnetic semiconductors International-presentation

    1st WUN INternational Conference on Spintronic Materials and Technology (WUN-SPIN07)　2007/08/07

  699. Ferromagnetism in III-V semiconductors International-presentation

    1st NIMS Conference on Recent Breakthroughts in Materials Science and Technology　2007/07/11

  700. Materials science and physics of ferromagnetism in semiconductors International-presentation

    12th International Conference on Intergranular and Interphase Boundaries in Materials (IIB2007)　2007/07/10

  701. スピントロニクス -材料からデバイス・回路へ-

    電子情報通信学会　2007/06/29

  702. Spin-current induced dynamics in ferromagnetic semiconductor structures International-presentation

    4th International School and Conference on Spintronics and Quantum Inoformation Technology (SPINTECH IV)　2007/06/17

  703. Spin-Current Induced Dynamics in Ferromagnetic Semiconductor Structures International-presentation

    4th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH IV)　2007/06/17

  704. Ferromagnetism in semiconductors International-presentation

    International Center for Quantum Structures Workshop on Nanomagnetism and Spintronics (ICQS)　2007/06/14

  705. Manipulation of magnetism and magnetization in ferromagnetic semiconductors International-presentation

    International Center for Quantum Structures Workshop on Nanomagnetism and Spintronics (ICQS)　2007/06/11

  706. The world of spintronics International-presentation

    International Symposium on Advanced Magnetic Materials and Applications (ISAMMA)　2007/05/28

  707. Domain wall motion in (Ga,Mn)As induced by spin-polarized current International-presentation

    Research Center for Spin Dynamics and Spin-Wave Devices Workshop　2007/05/25

  708. Spin spin-current induced domain wall dynamics in ferromagnetic semiconductors International-presentation

    M. Yamanouchi, D. Chiba, T. Dietl, F. Matsukura, J. Ieda, S. Maekawa, S. Barnes

    CERC International Symposium, Highlights and Perspectives of Correlated Electron Systems - From Physics to Applications　2007/05/22

  709. Control of magnetizaion in ferromagnetic semiconductors by spin-current International-presentation

    Frontiers in Nanoscale Science and Technology Workshop(FNST2007)　2007/03/29

  710. Spin current induced dynamics in ferromagnetic semiconductors International-presentation

    UK-Japan Workshop on Advance Materials　2007/02/27

  711. Spin-current effects observed by current-induced domain wall motion in (Ga,Mn)As International-presentation

    ATI and IFCAM International Workshop on Spin Current　2007/02/19

  712. Recent development in magnetic tunnel junctions for magnetic random access memories and beyond International-presentation

    SEMICON KOREA 2007　2007/01/31

  713. Spintronics -From materials to circuits International-presentation

    The 1st JUNBA Symposium on Nanomaterial Science　2007/01/11

  714. Giant tunnel-magnetoresistance in rf-sputter deposited CoFeB/MgO/CoFeB magnetic tunnel junctions International-presentation

    International Symposium, the Winter Conference of Korean Magnetic Society　2006/11/23

  715. MgO-based Magnetic Tunnel Junctions for Spin-Injection Magnetic Random Access Memories International-presentation

    International Workshop on New Non-Volatile Memory　2006/11/20

  716. Ferromagnetic Semiconductor Spintronics International-presentation

    Japan-German Joint Workshop 2006　2006/10/30

  717. Spin Current in Ferromagnetic Semiconductor Structures International-presentation

    The Semiconductor Spintronics Workshop　2006/10/12

  718. Current Induced Domain Wall Motion in (Ga, Mn)As International-presentation

    International Workshop on Spin Transfer 2006 (IWST)　2006/10/02

  719. Physics of Current-induced Domain Wall Motion in a Ferromagnetic Semiconductor (Ga, Mn)As International-presentation

    Workshop on Current Trends in Nanoscopic and Mesoscopic Magnetism　2006/09/06

  720. Physics and Materials of Spintronics with Semiconductors International-presentation

    4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-IV)　2006/08/15

  721. Integrating Spins in Electronics International-presentation

    Device Research Conference　2006/06/26

  722. Ferromagnetic III-V Semiconductors: Progress and Prospects International-presentation

    III Joing European Magnetic Symposia　2006/06/26

  723. Ferromagnetic III-V Semiconductors International-presentation

    International Conference on Modern Materials & Technologies (CIMTEC)　2006/06/04

  724. Electrical Manipulation of Magnetization in Ferromagnetic III-V Semiconductors International-presentation

    Spintronics Workshop　2006/05/08

  725. Magnetization manipulation in ferromagnetic semiconductors International-presentation

    Bio Nano Robo Seminar Series　2006/04/27

  726. Interaction between spin polarized current and localized spins in ferromagnetic semiconductors International-presentation

    KITP Conference of Spintronics　2006/03/20

  727. Progress and porspects of spintronics International-presentation

    15th International Conference on Ternary and Multinary Compounds　2006/03/06

  728. Domain wall motion induced by electrical current in (Ga,Mn)As International-presentation

    International Symposium on Mesoscopic Superconductivity and Spintronics 2006 (MS+S2006)　2006/02/27

  729. Current induced domain wall motion in ferromagnetic semiconductors International-presentation

    14th International Winterschool on New Developments in Solid State Physics, Charges and spins in nanostructures: basics and devices　2006/02/13

  730. Physics of ferromagnetic in semiconductors and their Heterostructures (I), (II) International-presentation

    Workshop on Mesoscopic and Spin Physics 2006　2006/01/05

  731. Electrical control of domain wall motion in ferromagnetic semiconductors International-presentation

    50th Magnetism and Magnetic Materials Conference　2005/10/30

  732. Electrical Magnetism and Magnetization Manipulation in Ferromagnetic Semiconductor Heterostructures International-presentation

    D. Chiba, M. Yamanouchi, F. Matsukura

    2005 Workshop on Materials with Novel Electronic Properties　2005/09/26

  733. Mid-infrared InAs/AlGaSb quantum cascade lasers International-presentation

    K. Otani

    20th Congress of International Commission for Optics, Challenging Optics in Science and Technology (ICO20)　2005/08/21

  734. Electrical Manipulation of Domain Walls in Semiconductors International-presentation

    Advanced Study Institute-Science and Application of Spin Electronics　2005/08/15

  735. Ferromagnetic Semiconductors for Spintronics International-presentation

    The 23rd International Conference on Defects in Semiconductors (ICDS-23)　2005/07/24

  736. Synthesis, Properties and Functionalities of Ferromagnetic Semiconductors International-presentation

    13th European Physical Society 2005　2005/07/10

  737. Electrical Magnetization Manipulation in Semiconductors International-presentation

    3rd International Conference on Materials for Advanced Technologies (ICMAT 2005)　2005/07/03

  738. Spin-based Electronics International-presentation

    1st International Nanotechnology Conference on Communication and Cooperation　2005/06/01

  739. InAs/AlSb quantum cascade lasers International-presentation

    K. Otani

    Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference (CLEO/QELS 2005)　2005/05/22

  740. High Temperature Ferromagnetism in Semiconductors: Issues International-presentation

    AFOSR Wide Band Gap Ferromagnetic Semiconductors Workshop　2005/05/15

  741. Magnetization Manipulation in Ferromagnetic Semiconductor Structures International-presentation

    Int. Workshop on Nanoscale Fluctuations in Magnetic and Superconducting Systems　2005/05/10

  742. Mid-infrared InAs-based quantum cascade lasers International-presentation

    K. Otani

    17th Indium Phosphide and Related Materials Conference (IPRM2005)　2005/05/08

  743. Magnetization reversal in ferromagnetic semiconductor structures International-presentation

    Japan – Sweden International Workshop on Quantum Nano Physics and Electronics　2005/04/07

  744. Current Induced Magnetization Reversal in Semiconductors International-presentation

    M. Yamanouchi, F. Matsukura

    International Magnetics Conference, "INTERMAG2005"　2005/04/04

  745. Electrical Control of Magnetization in Semiconductors International-presentation

    2005 March Meeting of the American Physical Society　2005/03/21

  746. Ferromagnetic III-V Semiconductors Spintronics International-presentation

    Deutsche Physikalsche Gesellschaft (German Physical Society)　2005/03/04

  747. Electrical Magnetization Control in Semiconductors International-presentation

    32nd Conf. on Physics and Chemistry of Semiconductor Interfaces (PCSI-32)　2005/01/23

  748. Electrical magnetization control in ferromagnetic semiconductors International-presentation

    The 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004)　2004/12/08

  749. Electrical Magnetization reversal in ferromagnetic semiconductors International-presentation

    Australia-Japan Workshop　2004/12/06

  750. Magnetic Semiconductor Spintronics International-presentation

    13th Semi-conducting and iusulating Materials Conference (SIMC-XIII-2004)　2004/09/20

  751. Electrical Manipulation of Magnetization in Ferromagnetic Semiconductors International-presentation

    31st International Symposium on Compound Semiconductors (ISCS2004)　2004/09/12

  752. Magnetism and Magnetization Manipulation in Semiconductors International-presentation

    Gordon Research Conference: Magnetic Nanostructures　2004/08/22

  753. Electrical Magnetization Reversal in Ferromagnetic Semiconductor Structures International-presentation

    4th IEEE Conference on Nanotechnology　2004/08/16

  754. Ferromagnetism in III-V and III-N Semiconductors International-presentation

    International Workshop on NItride Semiconductors, IWNS 2004　2004/07/19

  755. Manipulation of magnetism in semiconductors International-presentation

    1st Taiwan International Conference on Nanoscience and Technology　2004/06/30

  756. Electrical manipulation of magnetization in semiconductors International-presentation

    12th International Conference on Solid Films and Surfaces, ICSFS-12　2004/06/21

  757. Electrical manipulation of magnetism in ferromagnetic semiconductors International-presentation

    International Conference on Nanospintronics Design and Realization, ICNDR 2004　2004/05/24

  758. Manipulation of ferromagnetism in magnetic semiconductors International-presentation

    International Symposium on Mesoscopic Superconductivity and Spintronics MS+S2004　2004/03/01

  759. Ferromagnetic Semiconductor Materials and Devices for Spintronics International-presentation

    9th Joint MMM-Intermag Conference, MMM2004　2004/01/05

  760. Elecrrical manipulation of ferromagnetism in magnetic semiconductors International-presentation

    Aspen Winter Conference 2004-Spins in Nanostructures: From Atoms and Quantum Dots to Magnets　2004/01/04

  761. Spintronics Based on Ferromagnetic Semiconductors International-presentation

    3rd International Conference on Advanced Materials and Devices ICAMD2003　2003/12/10

  762. Ferromagnetic Semiconductor Spintronic Devices International-presentation

    New Phenomena in Mesoscopic Systems 6 and Surfaces and Interfaces in Mesoscopic Devices 4, NPMS6-SIMD4　2003/11/30

  763. Ferromagnetic Semiconductor Spintronic Materials and Devices International-presentation

    International Symposium on Clusters and Nano-Assemblies: Physical and Biological Systems, ISCANA 2003　2003/11/10

  764. Semiconductor Spintronics International-presentation

    1st Student-organizing International Mini-Conference on Information Electronics System　2003/11/04

  765. Spintronic Semiconductor Materials and Devices International-presentation

    International Symposium on Photonics and Spintronics in Semiconductors Nanostructures, PSSN 2003　2003/11/02

  766. Spintronics by Ferromagnetic Semiconductors International-presentation

    International Union of Materials Reserach Societies - International Conference on Advanced Materials IUMRS-ICAM 2003　2003/10/08

  767. Type-II InAs-based Quantum Cascade Lasers International-presentation

    Int. Conf. on Solid State Devices and Materials　2003/09/16

  768. Ferromagnetic III-V Semiconductor Materials and Devices International-presentation

    24th Riso Int. Symp. on Materials Science　2003/09/10

  769. Semiconductor Spintronics International-presentation

    2nd Int. Conf. on Semiconductor Spintronics and Quantum Information Technology, SPINTECH II　2003/08/04

  770. Ferromagnetic Semiconductor Heterostructures International-presentation

    Int. Conf. on Magnetism (ICM2003)　2003/07/27

  771. Properties and Manipulation of Ferromagnetism in III-V Semiconductors International-presentation

    Int. Conf. on Magnetism (ICM2003)　2003/07/27

  772. Manipulation of Spins in Semiconductors International-presentation

    8th Int. Symp. on Advanced Physical Fields　2003/01/14

  773. Ferromagnetism in III-V Semiconductor Heterostructures International-presentation

    the WE-Heraus Seminar on Frontiers in Nanomagnetism　2003/01/06

  774. Ferromagnetism and Spintronics in Semiconductors International-presentation

    Materials Research Society 2002 Fall Meeting　2002/12/02

  775. Manipulation of Spin States in Semiconductors International-presentation

    6th Symp. on Spin-Charge-Photon(SCP) Coupled Systems　2002/11/18

  776. Ferromagnetic Semiconductors for Spintronic Heterostructures International-presentation

    Asia-Pacific Surface and Interface Analysis Conference (APSIAC '02)　2002/10/01

  777. Molecular Beam Epitaxy and Properties of Ferromagnetic III-V Semiconductors International-presentation

    12th Int. Conf. on Molecular Beam Epitaxy (MBE XII)　2002/09/15

  778. Ferromagnetic Semiconductor Spintronics International-presentation

    26th Int. Conf. on Physics of Semiconductors (ICPS2002)　2002/07/29

  779. Manipulation of Ferromagnetism in Magnetic Semiconductor Field Effect Transistors International-presentation

    Device Research Conference　2002/06/24

  780. Magnetic semiconductors and manipulation of spin states International-presentation

    The 8th Int. Conf. on Electronic Materials(IUMRS-ICEM2002)　2002/06/10

  781. 49.H. Ohno, "Semiconductor Spintronics Using Ferromagnetic Semiconductor Heterostructures," International-presentation

    Intermag Europe 2002　2002/04/28

  782. 48.H. Ohno, "Spin-dependent Phenomena in Ferromagnetic Semiconductor Heterostructures," International-presentation

    The 17th International Colloquium on Magnetic Films and Surfaces　2002/03/05

  783. 47.H. Ohno, "Manipulation of Ferromagnetism in Semiconductors," International-presentation

    Mesoscopic Superconductivity and Spintronics 2002 (MS S 2002)　2002/03/04

  784. 46.H. Ohno, "Manipulation of Ferromagnetism and Spin-dependent Phenomena in Semiconductors," International-presentation

    The 28th International Symposium on Compound Semiconductors 2001　2001/10/01

  785. 44.H. Ohno, "Ferromagnetic Semiconductors for Spintronics," International-presentation

    The First Joint European Magnetic Symposia (JEMS01)　2001/08/28

  786. 45.H. Ohno, "Electric Field Control of Ferromagnetism in Semiconductors," International-presentation

    The 2001 International Conference on Solid State Devices and Materials (SSDM2001)　2001/08/28

  787. 43.H. Ohno, "Ferromagnetism in III-V Semiconductors," International-presentation

    The ERATO-JST Mini-Symposium on Quantum Computing: Priciples and Implementations　2001/08/24

  788. 42.H. Ohno, "Polarization, Transport and Manipulation of Spins in Semiconductors," International-presentation

    Spintronics 2001 (International Conference on Novel Aspects of Spin-Polarized Transport and Spin Dynamics)　2001/08/09

  789. 41.H. Ohno, "Ferromagnetic/nonmagnetic III-V Semiconductor Structures," International-presentation

    The 2nd Stig Lundqvist Research Conference on the Advancing Frontiers in Condensed Matter Physics: "Non-Conventional Systems and New Directions"　2001/07/02

  790. 40.H. Ohno, "Spin Manipulation in Ferromagnetic Semiconductor Structures," International-presentation

    The 4th Swedish-Japanese Quantum Nanostructure Workshop　2001/06/14

  791. 39.H. Ohno, "Spin Manipulation in Ferromagnetic/Nonmagnetic Semiconductor Heterostructures," International-presentation

    The 1st International Conference and School on Spintronic and Quantum Information Technology (SPINTECH-I)　2001/05/13

  792. 38.H. Ohno, "Spin Manipulation in Ferromagnetic Semiconductor Heterostructures," International-presentation

    The 10th Brazilian Workshop on Semiconductor Physics　2001/04/22

  793. 37.H. Ohno, "Ferromagnetic/Nonmagnetic Semiconductor Heterostructures," International-presentation

    2001 March Meeting of The American Physical Society　2001/03/12

  794. 36.H. Ohno, "Ferromagnetic III-V Semiconductors for Spintronics," International-presentation

    2001 March Meeting of The American Physical Society　2001/03/11

  795. 35.H. Ohno, "Electrical Spin Injection from Ferromagnetic Semiconductors," International-presentation

    The 8th Joint MMM-Intermag Conference　2001/01/07

  796. 34.H. Ohno, "Magnetic Semiconductor Heterostructures for Spintronics," International-presentation

    4th International Workshop on Quantum Functional Devices　2000/11/15

  797. 33.H. Ohno, "Spin-dependent Phenomena in Ferromagnetic/Nonmagnetic Semiconductor Structures," International-presentation

    Japanese-German Symposium on Nanotechnology　2000/10/29

  798. 32.H. Ohno, "Polarization, injection and relaxation of spins in magnetic/nonmagnetic III-V heterostructures," International-presentation

    The 8th NEC Symposium on Fundamental Approaches to New Material Phases – Spin-related Quantum Transport in Mesoscopic Systems　2000/10/22

  799. 31.H. Ohno, "Ferromagnetism and Spin Related Phenomena in Semiconductor Heterostructures," International-presentation

    American Vacuum Society 47th International Symposium　2000/10/02

  800. 30.H. Ohno, "Magnetism and Heterostructures of (Ga,Mn)As," International-presentation

    The 14th International Conference on High Magnetic Fields in Semiconductor Physics　2000/09/24

  801. 29.Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Probing and controlling spin-relaxation in semiconductor heterostructures," International-presentation

    25th International Conference on Physics of Semiconductors　2000/09/17

  802. 28.Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, "Spin-polarized Current Injection in Ferromagnetic Semiconductor Heterostructures," International-presentation

    Solid State Devices and Materials 2000　2000/08/29

  803. 27.H. Ohno, "Ferromagnetic Heterostructures for Semiconductor Spintronics," International-presentation

    8th Asia Pacific Physics Conference　2000/08/07

  804. 26.H. Ohno, "Ferromagnetism and Heterostructures of Magnetic III-V Semiconductors," International-presentation

    Electronic Structure and Magnetism in Complex Materials　2000/07/26

  805. 25.F. Matsukura and H. Ohno, "Manganese Based Ferromagnetic III-V Semiconductors," International-presentation

    Symposium on Spin Electronics　2000/07/02

  806. 24.H. Ohno, "Ferromagnetic III-V Heterostructures," International-presentation

    27th Conference on the Physics and Chemistry of Semiconductor Interfaces　2000/01/16

  807. 23.H. Ohno, "Ferromagnetic Semiconductor (Ga,Mn)As," International-presentation

    Frontiers in Magnetism　1999/08/12

  808. 22.H. Ohno, "Ferromagnetism and Heterostructures of III-V Magnetic Semiconductors," International-presentation

    13th International Conference on the Electronic Properties of Two-Dimensional Systems　1999/08/01

  809. 21.H. Ohno, "Magnetism and Transport Properties of Ferromagnetic Semiconductor (Ga,Mn)As," International-presentation

    The Fall 1998 Materials Resaerch Society Meeting　1998/11/30

  810. 20.H. Ohno, "Spin-Dependent Tunneling and Magnetic Properties of Ferromagnetic (Ga,Mn)As," International-presentation

    43rd Annual Conference on Magnetism and Magnetic Materials　1998/11/09

  811. 19.H. Ohno, "Spin-Dependent Phenomena in Semiconductor Heterostructures," International-presentation

    International Workshop on Physics and Applications of Semicondcutor Quantum Structures　1998/10/18

  812. 18.H. Ohno, "Spin Dependent Phenomena in Magnetic and Non-Magnetic III-V's," International-presentation

    International Conference on Solid State Devices and Materials　1998/09/07

  813. 17.H. Ohno, "III-V Based Ferromagnetic Semiconductors," International-presentation

    Fourth International Symposium on Physics of Magnetic Materials　1998/08/23

  814. 16.H. Ohno, “Ferromagnetic III-V Semiconductors and their Heterostructures” International-presentation

    24th International Conference on Physics of Semiconductors　1998/08/02

  815. 15.H. Ohno, “Ferromagnetism and Heterostructures of (Ga,Mn)As,” International-presentation

    FED-PDI Joint Conference on 21st Century Electron Devices　1998/06/29

  816. 14.H. Ohno, ”Magnetotransport and Magnetic Properties of (Ga,Mn)As and Its Heterostructures” International-presentation

    XXVII International School on Physics of Semiconducting Compounds　1998/06/07

  817. 12.H. Ohno, “Spin Dependent Transport in Ferromagnetic (Ga,Mn)As” International-presentation

    1998 March Meeting of The American Physical Society　1998/03/16

  818. 13.H. Ohno, “Spin and Charge Transport in III-V Magnetic Semiconductors” International-presentation

    JSPS Asian Science Seminar on Physics and Control of Defects in Semiconductors　1998/03/15

  819. 11.H. Ohno, “Properties of Ferromagnetic (Ga,Mn)As” International-presentation

    2nd Gordon Research Conference on Magnetic Nanostructures　1998/01/25

  820. 10.H. Ohno, “Carrier Induced Ferromagnetism in Diluted Magnetic Semiconductors” International-presentation

    The Second BUTSUKO Symposium Spin-Charge-Photon Coupled Systems　1997/11/25

  821. 9.H. Ohno, “Origin of Ferromagnetism in (Ga,Mn)As” International-presentation

    Japanese-Polish Symposium on Diluted Magnetic Semiconductors　1997/09/11

  822. 8.H. Ohno, “Ferromagnetic Semiconductor (Ga,Mn)As for Semiconductor Spin Electronics” International-presentation

    JRCAT Workshop on Phase Control of Colossal Magnetoresistive Oxides　1997/06/25

  823. 7.H. Ohno, “Mn-based III-V Diluted Magnetic (Semimagnetic) Semiconductors,” International-presentation

    International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors　1994/09/28

  824. 6.H. Ohno, “Inter-Subband Population Inversion in Tunneling Heterostructures,” International-presentation

    The 3rd International Union of Materials Research Society International Conference on Advanced Materials　1993/08/31

  825. 5.H. Ohno, "Diluted Magnetic III-V Semiconductors and Its Transport Properties," International-presentation

    The 9th International Conference on Ternary and Multinary Compounds　1993/08/08

  826. 4.H. Ohno, E.E. Mendez, A. Alexandrou, and J.M. Hong, "Tamm States in Superlattices," International-presentation

    The 5th International Conference on Modulated Semiconductor Structures　1991/07/08

  827. 3.H. Ohno, "Tamm States in Superlattices," International-presentation

    1991 March Meeting of The American Physical Society　1991/03/18

  828. 2.H. Ohno, H. Munekata, S. von Molnar, and L.L. Chang, "New Diluted Magnetic III-V Semiconductors," International-presentation

    35th Annual Conference on Magnetism and Magnetic Materials　1990/10/29

  829. 1.H. Ohno, J. Barnard, C.E.C. Wood, L. Rathbun and L.F. Eastman, "Double Heterojunction GaInAs Devices by MBE," International-presentation

    1980 International Electron Device Meeting　1980/12/08

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Industrial Property Rights 37

  1. 磁気抵抗効果素子及び磁気メモリ

    大野英男, 池田正二, 松倉文礼, 遠藤将起, 金井駿, 山本浩之, 三浦勝哉

    Property Type: Patent

  2. 磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ

    池田正二, 大野英男, 山本浩之, 伊藤顕知, 高橋宏昌

    Property Type: Patent

  3. 共鳴トンネル磁気抵抗効果素子、磁気メモリセル及び磁気ランダムアクセスメモリ

    大野英男

    Property Type: Patent

  4. 量子カスケードレーザ

    森安嘉貴, 大野英男, 大谷啓太

    Property Type: Patent

  5. 磁気メモリセル及びランダムアクセスメモリ

    大野英男, 池田正二, 早川純

    Property Type: Patent

  6. 半導体集積回路装置及びその製造方法

    羽生貴弘, 望月明, 白濱弘勝, 三浦成友, 大野英男

    Property Type: Patent

  7. 磁気デバイスの製造方法、及び磁気デバイスの製造装置

    小野一修, 大野英男, 池田正二

    Property Type: Patent

  8. 磁気抵抗効果素子、それを用いた磁気メモリセル及び磁気ランダムアクセスメモリ

    大野英男, 池田正二, 李 永珉, 早川純

    Property Type: Patent

  9. 磁気デバイスの製造方法、及び磁気デバイスの製造装置

    小野一修, 大野英男, 池田正二

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  10. 磁気メモリセル及び磁気ランダムアクセスメモリ

    大野英男, 池田正二, 早川純

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  11. トランジスタおよび電子デバイス

    西井潤弥, 大友明, 大谷啓太, 川崎雅司, 大野英男

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  12. 低消費電力磁気メモリ及び磁化情報書き込み装置

    早川純, 大野英男

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  13. 混晶二酸化チタン、多層膜構造体、及び素子構造

    川崎雅司, 豊崎秀海, 山田康博, 大野英男, 松倉文礼

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  14. コバルトドープ二酸化チタン膜の作製方法、コバルトドープ二酸化チタン膜、及び多層膜構造

    川崎雅司, 大野英男

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  15. 電流注入磁壁移動素子

    大野英男, 松倉文礼, 千葉大地, 山ノ内路彦

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  16. 半導体装置およびその製造方法ならびに電子デバイス

    杉原利典, 大野英男

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  17. ツェナートンネル効果を用いた半導体発光素子

    大野英男, 大谷啓太

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  18. トランジスタの製造方法

    原猛, 大野英男

    Property Type: Patent

  19. アクティブマトリクス基板およびその製造方法

    藤田達也, 大野英男

    Property Type: Patent

  20. 半導体装置およびその製造方法

    藤田達也, 大野英男

    Property Type: Patent

  21. InAs/AlSb量子カスケードレーザー及びその作製方法

    大野英男, 大谷啓太

    Property Type: Patent

  22. III-V族強磁性半導体とその製造方法

    大野英男, 白井正文, 松倉文礼, 千葉大地

    特許第3817204

    Property Type: Patent

  23. 不揮発性固体磁気メモリ、不揮発性固体磁気メモリの保磁力制御方法、及び不揮発性固体磁気メモリの記録方法

    大野英男, 松倉文礼, 千葉大地

    Property Type: Patent

  24. 不揮発性固体磁気メモリの記録方法

    大野英男

    Property Type: Patent

  25. 不揮発性固体磁気メモリの記録方法

    大野英男, 松倉文礼, 千葉大地

    特許第3932356

    Property Type: Patent

  26. 強磁性半導体素子、強磁性半導体のスピン分極方法

    大野英男, 松倉文礼, 篁耕司

    Property Type: Patent

  27. 半導体装置およびそれを用いる表示装置

    川崎雅司, 大野英男, シャープ株式会社

    Property Type: Patent

  28. スピンフィルタ

    大野英男, 大谷啓太

    特許第3834616

    Property Type: Patent

  29. 閃亜鉛鉱型CrSb、閃亜鉛鉱型CrSbの製造方法、及び多層膜構造

    大野英男, 松倉

    3849015

    Property Type: Patent

  30. 薄膜トランジスタおよびマトリクス表示装置

    川崎雅司, 大野英男

    Property Type: Patent

  31. スピン偏極伝導電子生成方法および半導体素子

    大野英男, 松倉文礼

    特許第3284239

    Property Type: Patent

  32. 核スピン制御素子及びその制御方法

    大野英男, 大野裕三, 岸本修也

    特許第3427179

    Property Type: Patent

  33. サブバンド間発光素子

    大野英男, 大谷啓太

    特許第3412007

    Property Type: Patent

  34. 半導体デバイス

    川崎雅司, 大野英男

    Property Type: Patent

  35. 量子閉じ込め構造を有する素子

    大野英男, 大野裕三

    特許第3438020

    Property Type: Patent

  36. 半導体光集積回路

    秋永広幸, 大野英男

    Property Type: Patent

  37. トランジスタ及び半導体装置

    川崎雅司, 大野英男

    Property Type: Patent

Show all Show first 5

Research Projects 35

  1. Spintronics-Based Hardware Paradigm for Artificial Intelligence

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Specially Promoted Research

    Institution: Tohoku University

    2017/04/25 - 2022/03/31

  2. Control of carrier dimensionality in InAs quantum cascade lasers and its effect on laser characteristics

    OHNO Hideo, OHTANI Keita, LIN Tsung-tse, BELMOUBARIK Mohamed, SATO Hiroki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2007 - 2009

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    To investigate the effect of carrier dimensionality on the laser characteristics of InAs quantum cascade lasers (QCLs), we applied the magnetic field in the direction parallel and perpendicular to quantum wells (QWs) layers and measured the emission properties. When the magnetic field in the direction perpendicular to QWs was increased, the threshold current density (J_<th>) was decreased most probably due to the formation of the Landau levels. On the other hand, when the magnetic field parallel to QWs was increased, the enhancement of the slope efficiency was observed whereas J_<th> remained unchanged. Also to study its effect on the characteristics of terahertz (THz) QCLs, we fabricated the GaAs THz QCLs. In addition, we observed the intersubband transitions in ZnO QWs which is expected to improve the temperature characteristics of THz QCLs.

  3. Development of high-performance InAs quantum cascade lasers

    OHNO Hideo, OHTANI Keita

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2005 - 2006

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    In order to develop low-threshold current density, high-power and high-temperature quantum-cascade lasers (QCLs), we fabricated InAs-based QCLs by molecular beam epitaxy and investigated laser characteristics, especially their relationship with the band structure of an active region. The summary of the research results is as follows: 1、Low-threshold current density operation We demonstrated low-threshold current density (0.4 kA/cm^2) operation at liquid-nitrogen temperature by employing InAs/Al_<0.2>Ga_<0.8>Sb superlattice active layers. The emission wavelength was 10 μm, which was in close agreement with the designed wavelength. This is among the lowest threshold current density of QCLs operating in the mid-infrared spectrum region. 2、Room-temperature operation We demonstrated the room-temperature operation of InAs-based QCLs emitting at 8.9 μm. In order to decrease thermal carrier leakage from the active layer, a diagonal intersubband transition was used. The observed threshold current density at 300 K was 12.0 kA/cm^2 and maximum operation temperature was 305 K. 3.High-power operation In order to increase the dynamic range of the operation current, a scheme to increase the doping concentration in the injection layers was employed. The observed room-temperature threshold current density was 4.0 kA/cm^2, which is the lowest threshold current density in InAs-based QCLs. We demonstrated the output optical peak power above 1 W at liquid-nitrogen temperature and 125 mW at room-temperature. 4.High-temperature operation Structure dependence on optical gain coefficient and its influence on the maximum operation temperature were investigated. We found that the active layer which exhibits the maximum optical gain coefficient presents the highest operation temperature. The observed maximum operation temperature was +100 ℃, which is the highest operation temperature in InAs-based QCLs.

  4. Semiconductor Nanospintronics

    MUNEKATA Hiroo, TANAKA Masaaki, ITOH Kohei, KATSUMOTO Shingo, SHIRAI Masafumi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research on Priority Areas

    Institution: Tokyo Institute of Technology

    2002 - 2006

  5. Spin injection and spin control in magnetic/non-magnetic semiconductor quantum structures

    OHNO Yuzo, OHNO Hideo, MATSUKURA Fumihiro, OHTANI Keita

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2002 - 2004

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    The purpose of the research is to establish fundamental technology for spintronics devices in which information is born and processed by spins. Here, we designed and fabricated ferromagnetic/non-magnetic semiconductor quantum structures and investigated the unique optical, electrical, and magnetic properties in those structures by controlling the spin states of carriers, nuclei, excitons, and magnetic ions with electrical and optical means. The achievements of the research are summarized as : 1.We manifested that the efficiency of electrical electron spin injection in p-ferromagnetic/n^+-non-magnetic semiconductor tunnel junction sensitively depends on the thickness and doping concentration of n^+-GaAs interface layer by performing a systematic experiments, and showed the optimized condition. 2.We studied the effect of anisotropic g-factor and hyperfine interaction in n-GaAs/AlGaAs (110) quantum wells by time-resolved Faraday rotation technique. We observed bistability and hysteresis of dynamic nuclear polarization, which were well reproduced by self-consistent calculation. We also evaluated the degree of dynamic nuclear polarization to be 30%. 3.We demonstrated that the hyperfine interaction and dynamic nuclear polarization can be controlled by changing the background electron density with gate electric field in a gated n-GaAs/AlGaAs (110) quantum well. We showed that the experimental observation can be explained by metal-insulator transition, on which the hyperfine interaction depends sensitively.

  6. 希薄磁性半導体量子構造スピン読み出し素子

    大谷 啓太, 大野 英男

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 萌芽研究

    Institution: 東北大学

    2002 - 2002

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    本研究課題では希薄磁性半導体スピン読み出し素子を提案し、次世代の量子情報処理・通信技術の基幹となる量子状態読み出し素子のプロトタイプを作製することを目指して研究を進めた。具体的には平成14年度の1年の研究期間で希薄磁性半導体量子井戸構造スピンフィルタを用いたスピン読み出し素子を提案し、その構造と期待される性能について理論的検討を行った。本年度に得られた主な研究成果は以下の通りである。 (1)II-VI族希薄半導体量子井戸構造スピンフィルタの設計 ZnMnSe/ZnSe及びZnCdMnSe/ZnSe量子井戸構造を用いたスピンフィルタに注目し、フィルタリング特性について計算を行ったところ、スピンをフィルタリングできるエネルギー及びその帯域が井戸や障壁層の厚さや組成などの構造をによって制御可能であることがわかった。 (2)II-VI族希薄磁性半導体量子井戸構造スピンフィルタを用いたスピン読み出し素子の提案 ZnMnSe/ZnSe及びZnCdMnSe/ZnSe量子井戸構造スピンフィルタを用いた3種類のスピン読み出し素子を提案した。これらの素子ではスピン状態の読み出しに光を用いるが、この光のエネルギーが量子井戸内のサブバンドのエネルギーに一致したとき、スピンの方向を効率良く光電流の流れる方向に変換できることがわかった。 (3)II-VI族希薄磁性半導体量子井戸スピン読み出し素子を用いた高周波発生器の検討 スピン読み出し素子と微小アンテナをカップリングさせた高周波発生器を提案し理論検討を行ったところ、円偏光バンド間光とサブバンド間光を用いれば、印加磁場によりギガヘルツからテラヘルツの周波数領域で可変な高周波発生器が作製可能であることがわかった。

  7. 半導体ナノスピントロニクス

    宗片 比呂夫, 勝本 信吾, 伊藤 公平, 田中 雅明, 大野 英男, 白井 正文

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(C)

    Institution: 東京工業大学

    2002 - 2002

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    従来の半導体物性に「スピン」という新しい自由度をもたらす様々な材料や構造が作製されるようになり、スピン機能を利用したデバイス実現へ向けた多くの基礎研究が行われるなど、これまで半導体ではあまり意識されなかったスピンを積極的に利用しようという研究が、ここ数年急速に進展している。本企画調査は、「半導体ナノスピントロニクス」分野およびその関連分野の研究者を集め、半導体や磁性体と半導体の複合構造中のスピンが関与する物性・機能およびその応用に関する研究成果について、集中的に討議することにより「半導体ナノスピントロニクス」の基本的な理解を深め,新しいスピン制御デバイスヘの応用の可能性を拓くことを目的として行われた。具体的には、平成14年12月19,20日に仙台国際センターにおいて「半導体中のスピン現象とその応用」に関する総合的な研究会(Physics and Application of Spin-related Phenomena in Semiconductors ; PASPS-8)を開催し、磁性原子を添加した半導体のバルク結晶や薄膜、磁性体と半導体から成る複合構造、非磁性半導体の量子構造、それらを微細加工した「スピントロニクスナノ構造」を対象に、(1)材料・構造の作製に関する材料科学、(2)キャリアスピン、磁性原子のスピン、光の間の相互作用に起因した光・電子物性,(3)キャリアあるいは磁性原子のスピンと伝導電子との相互作用に起因した電気伝導物性、(4)非磁性半導体中に注入・励起されたキャリアスピンのスピン緩和・スピンコヒーレンスなどのスピン物性、(5)以上述べた種々のスピン依存現象の応用可能性、に関して理論、実験、デバイス応用など様々な面からの研究課題を、口頭発表・ポスター発表形式で議論し、「半導体ナノスピントロニクス」と呼ばれる新分野の基盤技術を固めるとともに、21世紀の新しいエレクトロニクスに向けた我が国における研究コミュニティーを形成することができた。

  8. Spin coherence of electrons and its control in semiconductor quantum structures

    OHNO Hideo, OHNO Yuzo, MATSUKURA Fumihiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2000 - 2002

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    In this project, we carried out researches on (1) manifestation and control of spin coherence of electrons, (2) elucidation and control of interaction between electrons and nuclear spins or localized magnetic spins in semiconductor quantum structures, and (3) fabrication of novel devices which utilize spin-dependent electronic and optical properties based on the hybridization of conventional nonmagnetic semiconductor heterostructures and ferromagnetic semiconductors. During the term, we got the following results. 1. We demonstrated, for the first time, the electric field control of ferromagnetism of a ferromagnetic semiconductor (In,Mn)As. Using a field effect transistor structure, we controlled the hole concentration in (In,Mn)As channel by a gate voltage so that the hole-mediated ferromagnetic interaction can be modulated. 2. Using tow-temperature molecular beam epitaxy (LT-MBE), we successfully prepared zinc-blende CrSb, which does not exist in nature. We also demonstrated that the zinc-blende CrSb is room-temperature ferromagnetic. 3. We prepared (Ga,Mn)As/(Al,Ga)As/(Ga.Mn)As ferromagnetic semiconductor trilayer structures by LT-MBE in order to investigate spin-dependent transport properties. In such all semiconductor trilayer structures, we successfully demonstrated the giant magnetoresistance and tunnel magnetoresistance (TMR) effects, which have been widely utilized in magnetoelectronics devices made of metal-based junctions, in particular, exceeding 100% TMR has been realized in a (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction. 4. We prepared modulation doped GaAs/AlGaAs(110) quantum wells by MBE, and investigated the spin coherence time of electrons by a time-resolved Faraday rotation (TRFR) technique. We observed resonant spin amplification, which indicates that the electron spin coherence time is nearly 10 ns, and all optic unclear magnetic resonance. 5. We prepared a spin Esaki diode, which consists of a p-(Ga,Mn)As/n-GaAs, and demonstrated electrical electron spin injection into a nonmagnetic semiconductor via interband spin tunneling in the structure.

  9. スピン制御による半導体超構造の新展開

    大野 英男, 嶽山 正二郎, 吉田 博, 岡 泰夫, 西澤 潤一, 吉野 淳二, 望月 和子

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 特定領域研究(A)

    Institution: 東北大学

    2000 - 2000

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    特定領域研究「スピン制御による半導体超構造の新展開」では、平成9-11年度の3年間、スピン物性を顕著に発現する半導体超構造の作製法の確立とそのスピン物性の解明・制御、およびそれらのデバイス応用の観点から4つの研究班を組織し研究を進めた。特定領域研究が終了した本年度、総括班は、(1)特定領域研究の研究成果を発表し世界に情報発信をするとともに、内外の研究者が研究成果を発表することができる国際会議を開催、(2)和文の研究報告書のとりまとめ、(3)英文の研究報告書と論文集の作成、(4)報告書の主要部分のインターネット上への公開を行った。 具体的には、以下の通りである。平成12年9月13-15日の3日間、仙台国際センターにおいて17カ国から162名(うち69名は海外から)の参加者を集め、「半導体中のスピン関連現象の物理と応用に関する国際シンポジウム(PASPS2000)」と題して国際会議を開催した。会議では、17件の招待講演を含む132件の論文が発表された。プロシーディングスは学術雑誌Physica Eに発表される。会議中に海外からの参加者の要請で急遽第2回目の会議を2002年にドイツ・ウルツブルグ大学で開催する運びとなった。報告書に関しては、和文171ページ、英文700ページ(論文別刷含む)の2冊をまとめ、主要部分を http://www.ohno.riec.tohoku.ac.jp/projectreport/japanese/indexJ.htm及び http://www.ohno.riec.tohoku.ac.jp/projectreport/english/indexE.htmにて公開した。 本特定領域研究では、Nature,Scienceに4件の論文を発表したのをはじめ、半導体中のスピン応用に関する多くの知見を得た。米国では本領域研究に範を取り、新たにSpins in Semiconductorsなるプロジェクトが10倍の研究費規模で開始された。このように本領域は「半導体中のスピン」を一つの領域として国内外において確立することに成功した。同時に、本特定領域研究が先駆けて開拓した領域において、世界的にリードし続ける組織的対応が求められている。

  10. Far-infrared〜THz light emitter based on InAs/GaSb quantam cascade structures

    OHNO Hideo, MIZUTA Masashi, OHNO Yuzo, MATSUKURA Fumihiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A).

    Institution: Tohoku University

    1999 - 2000

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    Far-infrared〜THz intersubband light emitters based on InAs/GaSb quantum cascade structures were investigated theoretically and experimentally. In order to realize high efficiency light emitter, intersubband electroluminescence was characterized by step-scan Fourier transform infrared spectrometer(FT-IR) and low-temperature cryostat. The summary of the research results are : 1. Calculated threshold current density of type-II InAs/GaSb intersubband emitter showed that it was about one-fifth as small as that of type-I GaAs/AlGaAs and GaInAs/AlInAs systems. 2. Intersubband electroluminescence from InAs/AlSb quantum cascade structures having large tunability of emission wavelength was observed for the first time. 3. Temperature and structure dependence of intersubband electroluminescence was instigated by step-scan FT-IR and low-temperature cryostat. Calculated subband structures were found to be in close agreement with extperimental results. 4. Optical properties of InAs/AlSb multi-quantum wells epitaxially grown on GaAs substrates with a buffer layer were shown to be dependent on the type of the interface bond and buffer layer material. X-ray diffraction measurements revealed that lattice matching between the average lattice constant of multi-quantum well and the buffer layer plays a key role in determining the optical properties. 5. Carrier recycling in type-II InAs/GaSb quantum cascade structures was investigated. It has been observed that the emission power was proportional to the periods of cascade structures, which indicated that injected carriers were recycled in type-II cascade structures. 6. The new type-II InAs/GaSb light emitting structures was proposed. Theoretical calculation showed that new structures could emit electro-magnetic waves in the THz region without going to an extreme design.

  11. Growth Dynamics and Properties of Compound Semiconductor Layers Prepared by Low Temperature Molecular Beam Epitaxy

    OHNO Hideo, OHNO Yuzo, MATSUKURA Fumihiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: TOHOKU UNIVERSITY

    1998 - 1999

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    III-V semiconductors and/or diluted magnetic semiconductors, and their nanostructures were grown by low-temperature (LT-) molecular beam epitaxy (MBE). The growth dynamics and structures have been investigated by reflection high energy electron diffraction (RHEED), and atomic force (AFM) and/or magnetic force (MFM) microscopy. Their optical, magnetic, and transport properties of the samples were also characterized. The summary of the research results are : 1. It has been observed that the oscillation of the RHEED intensity recovers as the growth temperature was much lowered (〜300℃). The experimental results of the temperature dependence were successfully represented by Monte-Carlo simulation calculation based on the model which treats the excess arsenic as self-surfactant. 2. A new diluted magnetic semiconductor (Ga,Mn)Sb with a few percent Mn concentration has been successfully grown by MBE. The dependence of their properties on the growth temperature was investigated by AFM/MFM, magnetization and magnetotransport measurements. By AFM and MFM observations, it was found that MnSb clusters were formed on the surface. When the growth temperature is as high as 〜560℃, the sample is ferromagnetic at room temperature, and the MnSb clusters dominate the whole magnetization properties. On the other hand, the magnetization and magnetotransport properties of the samples grown at LT exhibit another magnetic phase below 20 K, indicating the existence of (Ga,Mn)As which becomes ferromagnetic at lower temperatures (〜20 K). 3. It has been demonstrated that size uniformity of the self-assembled InMnAs quantum dots grown on (211)B GaAs substrate can be improved by introducing Mn, indicating that Mn plays a role of surfactant. 4. All-semiconductor ferromagnet (GaMn)As/nonmagnet (Al,Ga)As/ferromagnet (Ga,Mn)As trilayer structures were fabricated by LT-MBE, and their magnetic and transport properties were characterized. It has been demonstrated that the magnetic coupling between two ferromagnetic layers can be controlled by tuning the thickness and/or the barrier hight of the non-magnetic layer. Furthermore, we have observed the giant magnetoresistance effect in this system for the first time.

  12. Electronic Properties of Spin Controlled Semiconductor Nanostructures

    OHNO Hideo, TARUCHA Seigo, SUZUKI Naoshi, KATSUMOTO Shingo

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research on Priority Areas

    Institution: Tohoku University

    1997 - 1999

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    This group was formed to study and elucidate the electronic structure and the transport properties of spin-controlled semiconductoring materials and nanostructures. To this end, the growth and processing of ferromagnetic semiconductors and their related heterostructures, transport/magnetic/optical properties of these materials and structures, and the electronic structure calculation as well as the theory of transport properties were investigated. The summary of the research results is : 1. Ferromagnetic/non-magnetic trilayer structures made of semiconductor showed spin-dependent scattering, interlayer coupling and tunneling magnetoresistance. Resonant tunneling diodes with (Ga, Mn) As emitter exhibited spontaneous current peak splitting below the ferromagnetic transition temperature. Also electrical spin-injection from ferromagnetic (Ga, Mn) As into a nonmagnetic GaAs structure was demonstrated. (H.Ohno et al.) 2. Magnetism and transport in (In, Mn) As and (Ga, Mn) As at low temperature was studied. One of our important finding is that crystalline quality is much improved by heat treatment at comparatively low temperature. Soft X-ray absorption experiment is making it clear that the improvement is due to the evaporation of excess As atoms. (S.Katsumoto et al.) 3. First-principle electronic band-structure calculations are carried on III-V based diluted magnetic semiconductors (Ga, Mn) As. The magnetic interactions between the nearest neighboring 3d transition-metal spins are ferromagnetic for V, Cr, Mn. (N.Suzuki et al.) We have prepared an artificial atom/molecular having a high-degree of rotational symmetry. For artificial atom, (i) atom-like properties such as shell filling and obeisance of Hund's rule and (ii) various transitions of spin states as a function of magnetic field have been observed. For artificial molecules we have investigated novel spin effects such as spin blockade, isospin blockade, spin-dependent tunneling, and so on. (Tarucha et al.)

  13. Carrier induced ferromagnetism and its control in III-V diluted magnetic semiconductors

    OHNO Hideo, OHNO Yuzo, MATSUKURA Fumihiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: TOHOKU UNIVERSITY

    1996 - 1997

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    The purpose of this research is to clarify the relationship between magnetism and semiconductor properties such as carrier concentration, and to explore the possibility of control of magnetism by the control of carrier concentration, using III-V based diluted magnetic semiconductor quantum structures. Here, we concentrated mainly on (Ga, Mn) As which we showed earlier that it can be grown by lowtemperature molecular-beam epitaxy and shows hole-induced ferromagnetic order at low temperaturcs. The summary of results is as follows ; 1.From magnetotransport measuremens, the dependence of ferromagnetic transition temperature (T_c) and hole concentration (p) of (Ga, Mn) As on the Mn concentration (x) was determined. It is showm that both T_c and p monotonically increase with increase of x up to about 0.05. The highest T_c obtained so far is 110 K for a sample with x=0.053. 2.All semiconductor-based ferromagnetic/non-magnetic quantum structures, (Ga, Mn) As/(Al, Ga) As heterostructures were realized. Even in such structures, where the thickness of (Ga, Mn) As layrs is below 10 nm, the ferromagnetic order is preserved. 3.From the analysis of the magnetoresistance in the paramagnetic region, the magnitude of exchange interaction (J_<pd>) between magnetic spins and holes was determined. This J_<pd> is shown to be large enough to explain the observed T_c by the well RKKY formula remarkably well. These results strongly indicates that it is possible to control the magnetism of (Ga, Mn) As by changing the carrier concentration of the layrs by electric fields using field effect transistor structures.

  14. スピン制御による半導体超構造の新展開

    大野 英男, 宗方 比呂夫, 獄山 正二郎, 家 泰弘, 吉田 博, 吉野 淳二

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 基盤研究(B)

    Institution: 東北大学

    1996 - 1996

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    半導体中のキャリアや磁性イオンのスピン間の交換相互作用に基づくさまざまな物性は、これまで応用の表舞台にでることはなかった。これは、材料技術、超構造作製技術が未発達であったので、電子のもつスピンという自由度を積極的に制御し利用することが出来なかったためである。しかしここ数年で状況は大きく変化した。II-VI族・III-V族希薄磁性半導体とその超構造が作製可能となり、磁性不純物添加半導体構造や磁性体/半導体ヘテロ構造も実現された。この結果半導体超構造のスピンを理解して積極的に制御し、応用を考えることが可能となりつつある。 本研究では、半導体超構造におけるスピンに関する材料、超構造作製、測定、理論の研究を総合的有機的に結びつけることによって、(1)スピン物性の顕著に発現する半導体超構造の作製法の確立し、(2)半導体超構造におけるスピン物性を解明して、(3)スピンという新しい自由度を利用した半導体超構造の応用の可能性を明らかにする、ことを目的とする重点領域研究のための企画調査を行った。 第1回目の研究会を平成8年9月26-27に仙台で行い、予定されている計画研究の内容を発表すると共に有機的に研究を推進するための協力関係について話し合った。さらに、一般に公開された第2回の研究会を平成9年1月27-28日仙台国際センターにて開催し、予定されている計画研究メンバのみならず広く国内・国外の研究者の参加を得て、III-V族化合物半導体、II-VI族化合物半導体、磁性不純物添加半導体、新しい磁性半導体の開発、メゾスコピック領域も含めた超構造のスピン物性についての研究発表と研究討論を行った。第3回の研究会は平成9年3月13日に行われ、重点領域の公募研究について討論を行った。

  15. 化合物半導体結合量子井戸構造における量子電子輸送現象とジョセフソン効果

    大野 英男, 大野 裕三, 松倉 文礼, 澤田 安樹, 江澤 潤一

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 東北大学

    1996 - 1996

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    本研究は、結合量子井戸の量子電子輸送現象にとりあげ、高移動度を有する結合2重量子井戸構造の結晶成長と、2層の電子系それぞれに独立にコンタクトを有する素子の製作を行い、それを用いて低温・強磁場中での2層の2次元電子系の輸送現象を明らかにすることを目的としている。平成6-8年度の研究により次の成果を得た。(1) 2層の電子層それぞれにオーミックコンタクトを取るためにフロントゲートとバックゲートを使って上と下のチャネルをそれぞれ切るデバイス構造を作製するプロセスを開発し確立した。基板研磨と部分的エッチングを併用して100V以下のしきい値を実現した。(2)分子線エピタキシで成長した選択ドープAlGaAs/GaAs構造より作製したフロント、バックゲートつきのデバイスを用いて、希釈冷凍器つき超伝導磁石で8mK、14.5Tまでの測定を行い、2重量子井戸構造に特異な分数量子ホール効果のゲート電圧依存性が見られることを確認した。これは低キャリア濃度でかつ共鳴状態になるようにフロント・バック両ゲートによりキャリア濃度を調整したために観測可能となったものである。さらにこの特異な振る舞いが2層系の分数量子ホール状態がゲージ理論より導かれるコンポジットボゾンでよく説明できることを見出した。

  16. Diluted Magnetic Semiconductor Based Memory Devices

    OHNO Hideo, YOKOYAMA Naoki, OHNO Yuzo, MATSUKURA Fumihiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: TOHOKU UNIVERSITY

    1995 - 1996

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    In order to asses the feasibility of memory devices based on ferromagnetic diluted magnetic semiconductors (DMS's)'study on III-V based ferromagnetic DMS's, its processing technology, memory devices structures has been carried out. The following results have been obtained. (1)New III-V based ferromagnetic DMS based on GaAs, (Ga, Mn)As, has been synthesized for the first time by low temperature molecular beam epitaxy (MBE). Maximum Mn mole fraction was found to be 0.071. X-ray diffraction study showed increase of lattice constant with increase of Mn mole fraction (vegard's law). This material may be suitable for the memory application since it can be easily integrated with existing III-V circuity. (2)Magnetization as well as magnetotransport measurements showed that (Ga, Mn)As is ferromagnetic ; the highest curie temperature so far obtained was 110K.Curie temperature is proportional to Mn mole fraction below 0.05. (3)Reversing the strain direction in (Ga, Mn)As by using InGaAs buffer layrs, it was shown that the easy axis can be made perpendicular to the sample plane. This is very important finding for the memory application using anomalous Hall effect for reading the information stored in memory. (4)From critical scattering and Curie temperature, it was found that the origin of ferromagnetism is RKKY interaction. (5)Processing technology for memory fabrication has been developed and memory elements were fabricated to study its potential for applicaitons.

  17. Physics and Application of Spin-Related Phenomena in Semiconductors

    OHNO Hideo, MUNEKATA Hiroo, TEKEYAMA Shyojirou, IYE Yasuhiro, YOSHIDA Hiroshi, YOSHINO Junji

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: TOHOKU UNIVERSITY

    1995 - 1996

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    Expermental as well as theoretical research on spin related phenomena in semiconductor quantum structures has been conducted in order to establish (1) fabrication processes of semiconductor quantum structures with pronounced spin effects.(2) understanding of the spin related phenomena in such structures, and (3) possible application of the semiconductor quantum structures using the new degree of freedom related to spin of electrons. Two Symposia named "Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors" were held at the Research Institute of Electrical Communication, Tohoku University on December 20-21,1995, and at the Sendai International Center on January 27-28,1997 in an effort to bridge the gap between the Semiconductor Materials and the Magnetic Materials. Following results are among those the research results obtained in the course of the present project. (1) Epitaxial growth of magnetic materials on Si (2) A new III-V based ferromagnetic diluted magnetic semiconductor, (GA,Mn)As (3) Control of exchange interaction among magnetic ions by semiconductor nanostructures (4) Experimental verification of the existence of free magnetic polarons

  18. STRUCTURAL DYNAMICS OF EPITAXY AND QUANTUM MECHANICAL APPROACH

    NISHINAGA Tatau, SHIRAISHI Kenji, ITOH Tomonori, OHNO Hideo, NAKAYAMA Hiroshi, ICHIMIYA Ayahiko

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: The University of Tokyo

    1995 - 1996

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    The present research has been conducted from April of 1995 to March of 1997. During this period, 6 meetings were held including one meeting to summarize the results of the present research which was held in Kobe on 25th and 26th of January, 1997. One of the aims of the present project is to provide a common place for the discussions among the theoretical and experimental scientists for obtaining deep understandings in the structure dynamics of epitaxy by quantum mechanical approach and by sophisticated experiments. It has been shown by lst principle quantum mechanical calculation that electron counting model can explain very well the atomistic structure of reconstructed surface with growing adatoms. Basing on this, Monte Carlo simulation was conducted with the help of electron counting model and it was found that the difference in the behavior of A and B steps on (001) GaAs is well explained. Monte Calro simulation for the growth of two-component crystal was also conducted. In the experimental part, the behavior of ad-atom on Si reconstructed surface was studied by using scanning tunneling microscope (STM) and it was found reconstruction influences the morphology of 2D islands. The surface diffusion length of group III atoms until incorporation was studied by using microprobe-RHEED/SEM MBE.It was found that the diffusion length of incorporation depends strongly on As pressure and that the direction of inter-surface diffusion between (111) B and (001) surfaces is reversed twice as As pressure is increased due to the As pressure dependency of group III atom life time. Although, there is still a large gap between theoretical and experimental works, this kind of effort to bury the gap is very important.

  19. 化合物半導体結合量子井戸構造における量子電子輸送現象とジョセフソン効果

    大野 英男, 松倉 文礼, 澤田 安樹, 江澤 潤一

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 東北大学

    1995 - 1996

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    本研究は、結合量子井戸の量子電子輸送現象をとりあげ、高移動度を有する結合2重量子井戸構造の結晶成長と、2層の電子系それぞれに独立にコンタクトを有する素子の製作を行い、それを用いて低温・強磁場中での2層の2次元電子系の輸送現象を明らかにすることを目的としている。本年度の研究では、分子線エピタキシによる結晶成長と測定用デバイス作製装置の製作、さらにデバイスの試作を行い、低温・高磁場下のヘテロ構造の測定準備を進めた。具体的には、2層の電子層それぞれにオーミックコンタクトを取るためにフロントゲートとバックゲートを使って上と下のチャネルをそれぞれ切るデバイス構造を作製するプロセスを開発し、実際にフロント、バックゲートの動作を確認した。また低温で高移動度(50万cm^2/Vs)を有する試料について、希釈冷凍器つき超伝導磁石で8mK、14.5Tまでの測定を行い2重量子井戸構造でで分数量子ホール効果の観測されることを確認した。

  20. 化合物半導体総合量子井戸構造における量子電子輸送現象とジョセフソン効果

    大野 英男, 松倉 文ひろ, 澤田 安樹, 江澤 潤一

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 東北大学

    1994 - 1994

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    本研究は、結合量子井戸の量子電子輸送現象をとりあげ、高移動度を有する結合2重量子井戸構造の結晶成長と、2層の電子系それぞれに独立にコンタクトを有する素子の製作を行い、それを用いて低温・強磁場中での2層の2次元電子系の輸送現象を明らかにすることを目的としている。本年度の研究では、理論面で横磁場下での系の基底状態の相転移に関し新しい知見を得た。具体的には、2層の分数量子ホール状態にある電子層の間の量子位相の存在を明らかにするために横磁場B_<11>の効果を解析した。その結果、(1)B_<11>が小さいときには外部磁場は2層間で不完全にスクリーンされ、臨界磁場を越えると外部磁場は自由に2層間に侵入すること、(2)Murphyら(Phys.Rev.Lett.,72,728(1994))の報告した2層分数量子ホール系におけるp_<xx>の活性化エネルギの印加磁場角度依存性がこの2つの相で良く説明できること、が明らかになった。実験面では分子線エピタキシによる結晶成長と測定用デバイス作製装置の製作、さらにデバイスの試作を行い、低温・高磁場下のヘテロ構造の測定準備を進めた。具体的には、2層の電子層それぞれにオーミックコンタクトを取るためにフロントゲートとバックゲートを使って上と下のチャネルをそれぞれ切るデバイス構造を作製するプロセスを開発した。そのために必要な表面と裏面の構造をアラインさせるマスクアライナを製作した。測定では、希釈冷凍器つき超伝導磁石で8mK、14.5Tまでの予備測定を行い、選択ドープヘテロ接合で分数量子ホール効果の観測されることを確認した。

  21. Quantum Structure Long-wavelength Light Emitting Devices Using Heterojunction Energy Filters

    OHNO Hideo, MIZUTA Masashi, MATSUKURA Fumihiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Developmental Scientific Research (B)

    1993 - 1994

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    Research on the basic properties of the inter-subband optical transition in compound semiconductor quantum structures was carried out to gain the understanding required to realize long-wavelength light emitting devices utilizing the inter-subband optical transitions. The following two quantum structures were investigated theoretically and both are shown to be able to be used to realize long-wavelength LED's : (1) InAs/AlSb/GaSb quantum structures in which all the electrons pass through the structure undergo inter-subband transition, and (2) energy filter structures utilizing more mature AlGaAs/GaAs systems. Population inversion was also shown to be realized by the two structures even under the fast nonradiative relaxation by optical phonons. On the experimental side, AlGaAs/GaAs structures were grown and the inter-subband absorption under electric fields was measured to clarify the effect of electric field on the transition. It was found that the absorption energy shifted toward low energy when carrier concentration in the well was high, whereas it shifted toward high energy when carrier concentration was low (Stark shift). Experiments are under way to experimentally realize the LED's based on the inter-subband transitions in these structures.

  22. III-V族希薄磁性半導体ヘテロ接合における磁気秩序と電気伝導

    大野 英男, 中原 純一郎

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 一般研究(C)

    Institution: 北海道大学

    1993 - 1993

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    本研究では、申請者等が新しく合成に成功したIII-〓族をベースとする希薄磁性半導体を用いたヘテロ接合に見られる磁気秩序と電気伝導の関係を明らかにし、この新希薄磁性半導体ヘテロ接合の物性を解明し、応用の可能性を探ることを目的として研究を進めた。具体的には、(1)分子線エピタキシによる(In,Mn)As/(Al,Ga)Sbヘテロ構造の成長と加工、(2)1.4〜300K、最大8Tまでの磁場中での、磁気輸送特性(磁気抵抗効果、ホール効果)の測定を行った。 本研究で得られた新しい知見は、以下の点に要約される。試料としては、20nmの(In,Mn)As(MnAs組成0.18)を(Al,Ga)Sb(AlSb組成0.3)上に成長させたものを取り上げた。 (1)200K以下では、ホール抵抗は通常のホール効果と異常ホール効果よりなる。また、異常ホール効果の部分は磁化と抵抗の積に比例する。 (2)40K以上では、磁化は磁場に比例しキュリーワイス型の温度変化を示す。フィッティングよりキュリー温度として35Kを得る。このことは、Mn間の相互作用が強磁性的であることを示している。 (3)40K以下では、磁化曲線は急峻になり単純な常磁性と異なるふるまいを示す。10K以下で初めてヒステリシスが顕著になる。しかし、厚い試料で見られていた常磁性と強磁性の共存を示す特性は見られていない。 (4)平均場近似では40K以下の磁化のふるまいを理解することはできない。磁気ポーラロンなどの大きさを統計的に取り入れる、または超常磁性的ふるまいであると考えることで説明ができる可能性がある。

  23. 化合物半導体清浄表面と有機金属との相互作用

    大野 英男, 福井 孝志, 中原 純一郎

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 北海道大学

    1993 - 1993

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    本研究は、化合物半導体の種々の清浄表面と有機金属との相互作用を実験的に明らかにしていくことを目的とした。具体的には、超高真空中でMBE成長したGaAsなどの清浄表面に、有機金属を照射し、その相互作用の様子を電子分光法、反射高エネルギ電子線回折等を用いて明らかにすることを試み、さらに水素、水素ラジカル照射で、成長の様式や不純物(特に炭素)の取り込みがどのように変わるかを明らかにすることを試みた。本年度の成果は以下の通り。 オージェ電子分光、二次イオン質量分析法、透過電子顕微鏡を用いて、真空中においてGaAs清浄表面に照射されたトリメチルガリウム(TMGa)のカイネティクスと成長速度、炭素不純物の濃度との関係を統一的に明らかにした。GaAs上でTMGaはまず解離吸着し、メチル基が速い時定数(<1s)で脱離してメチルガリウム(ジメチル又はモノメチルガリウム)となる。その後100s(〜500℃)程度の時定数で、メチル基が脱離する。このメチル基が、原子層エピタキシにおける自己停止機構を実現している。さらに長い時定数(>600s)をもつ表面炭素も測定されているが、これがGaAs中の残留炭素濃度を決定するものと考えられる。高純度GaAsの結晶成長にはこの最後の炭素を除去することが必要となるが、これには、水素ラジカルを照射することが有効であり、残留炭素濃度を10^<20>cm^<-3>から10^<18>cm^<-3>以下に低減することが可能であることを明らかにした。ラジカルビームの強度、照射時間をあげることでよりいっそうの低減が可能である。また、TMGaパージサイクル中に水素ラジカルを照射することによって原子層エピタキシの成長速度が1ML以上に増加する、すなわち吸着したTMGaの量が1MLを越えていることを示す興味深い結果も得られた。

  24. Development of Low Temperature Deposition Process of Silicon Oxide Film by Low Frequency Plasma CVD (TEOS+O_2)

    DATE Hiroyuki, SHIMOZUMA Mitsuo, OHNO Hideo, TAGASHIRA Hiroaki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Developmental Scientific Research (B)

    Institution: Hokkaido University

    1992 - 1993

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    Silicon oxide films have been used in the fabrication of integrated circuits as the insulation layr of metal-oxide-semiconductor structures or as a passivation layr. In the beginning, silicon oxide films used in integrated circuits were prepared by thermal oxidation of silicon substrates or thermal chemical vapor deposition (CVD). Recently, many kinds of methods to prepare the films, such as low pressure CVD, plasma oxidation, sputtering, and plasma CVD have been developed. Among these methods, plasma CVD can deposit high quality silicon oxide films at comparatively low substrate temperatures. Moreover, silicon oxide films with good step coverage are deposited by plasma CVD using TEOS (Tetraethoxysilane). In this work, the silicon oxide films was deposited using TEOS as a silicon source by using a low frequency (50Hz) plasma CVD.It is found in the present work that the substrate heating at deposition is required to obtain acceptable electrical properties when silicon oxide films are deposited from a TEOS and oxygen mixture, even by low frequency (50Hz) plasma CVD.The films deposited at 200。C from the plasma of a 3% TEOS mixture were found to be high quality insulating films ; the resistivity was 10^<16>OMEGA cm and the breakdown strength 7X10^6 V/cm. Moreover, Auger electron spectrum analysis revealed that carbon atoms were not detected from the films in spite of the presence of carbon atoms in the TEOS molecule. With optical emission spectrum analysis of the TEOS and oxygen mixture plasma, strong emissions from the CO and CO_2 molecules were observed.

  25. 3-5族希薄磁性半導体の強磁性秩序と電気伝導・光物性

    大野 英男, 中原 純一郎

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 一般研究(C)

    Institution: 北海道大学

    1992 - 1992

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    本研究は、申請者らが新しく合成に成功したIII-V族希薄磁性半導体に見られる強磁性秩序と電気伝導・光物性との関係を明らかにし、この新希薄磁性半導体の応用の可能性を探ることを目的として行われた。 本年度は、III-V族化合物半導体をベースにした希薄磁性半導体、InMnAsを対象に、その電気伝導・光物性と磁気的性質との関係を明らかにすることを試みた。特に、高正孔濃度のp形試料にのみ低温で(〜10K)見られる強磁性秩序の発現機構とその影響を明らかにすることを目標とした。 高正孔濃度のp形試料(MnAs組成〜0.013)は、中高温領域で常磁性であり、ある臨界温度以下で自発磁化が生じる。磁気輸送現象を調べると、半導体が磁化を持つことで現われる異常ホール効果が通常のホール効果より大きく、これに注目することで磁化を決定することができることが明らかになった。それによると膜厚1μm前後の試料では10K以下で自発磁化が観測される。自発磁化はn形試料には見られないことから正孔とMnのスピンとの相互作用が強磁性的相互作用の発現に重要な役割を果たしていることがわかった。また、強磁性秩序の発現とともに負の磁気抵抗効果が観測されはじめる。これは磁気秩序がキャリアの局在を促進していることを示している。これらのことは、以前から提案している傾いたスピンを内包する大きな磁気ポーラロンの存在により説明できる。さらに、p形ヘテロ接合試料でも強磁性秩序が観測された。薄膜・ヘテロ接合試料共にMnの内殼遷移を検出することを試みている。

  26. 化合物半導体清浄表面と有機金属との相互作用

    大野 英男, 福井 孝志, 中原 純一郎

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 北海道大学

    1992 - 1992

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    本研究では、化合物半導体の種々の清浄表面と有機金属との相互作用を実験的に明らかにしていくことを目的に、超高真空中で分子線エピタキシ成長したGaAsなどの清浄表面に有機金属を照射し、その相互作用の様子を反射電子線回折、電子分光などの手法で観測・解析した。 本年度は特に様々な面方位・表面最構成を有する清浄なGaAsに有機金属を照射し、その表面をオージェ電子分光、反射電子線回折、光反射により観測して表面状態や反応の時定数を明らかにし、相互作用に関する知見を得ることを試みた。 具体的には、反射電子線回折を装備した分子線エピタキシ装置と、それに接続したオージェ電子分光装置を用いて、GaAsのAsおよびGa安定化(100)、(111)B、(111)A、(110)各表面とトリメチルガリウム(TMGa)との相互作用を観測した。また原料の交互供給によるGaAs成長を行いその成長速度を調ベた。その結果、As・Ga安定化(100)面、(111)B面上には、約2MLのメチル基の起因するCがTMGa供給停止直後に存在し、その後ある時定数で減少して1MLの定常値に達するのに対し、(111)A面、(110)面ではC信号はほとんど見られないことが明らかになった。また交互供給成長の成長速度は後者が極めて遅く、Cのふるまいとあわせて表面に有機金属が安定に存在しないことが示された。(100)面では成長速度が0.7ML/サイクルに飽和する原子層エピタキシを確認した。また(111)Bでは成長速度の飽和が見られず、表面に有機金属を分解するサイトが存在する可能性が高いことが示された。

  27. 化合物半導体清浄表面と有機金属との相互作用

    大野 英男, 中原 純一郎

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 北海道大学

    1991 - 1991

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    本研究では、化合物半導体の種々の清浄表面と有機金属との相互作用を実験的に明らかにしていくことを目的に、超高真空人で分子線エピタキシ(MBE)により成長したGAASの清浄表面に有機金属(トリメチルガリウム、TMGa)を照射し、その相互作用の様子をオ-ジェ電子分光でin Situに観測した。 特に、TMGaのメチル基の振る舞いを明らかにするために、オ-ジェ電子分光の炭素信号の時間変化に注目して実験を進めた。基板には、GaAs(001)面を用い、GaAsをMBE装置でエピタキシャル成長した後、オ-ジェ電子分光室に移送し、そこで加熱しながらTMGaを導入した。測定は、TMGaを停止後直ちに開始した。 その結果、(a)TMGaに100L程度GaAs表面を曝すことにより表面に炭素が観測される、(b)TMGaを停止後、炭素は指数関数的に減衰し、定常値に達する、(c)減衰の時定数は活性化エネルギ1.3ev、pre‐exponential factor 6.6x10 ^<-7>Sであらわされ、(d)炭素信号の初期値と定常値の比はほぼ2であって、(e)定常値は、装置付属の感度表を用いると約1モノレ-ヤ(ML、GaAs(001)表面のGaサイトの密度を基準にしている)と見積もられる、ことが判明した。 この炭素信号の振る舞いは、TMGaが分解してジメチルガリウムとなって表面に吸着し、その後、TMGaの供給を停止すると、メチル基が一つ脱離し、約1MLのモノメチルガリウム(MMGa)が表面に残ると考えるとよく説明できる。本研究の成果は、有機金属と化合物半導体表面の相互作用のダイナミクスを、in situに、かつ直接表面をスペクトロスコピックに観測して明らかにした、初めてのものである。

  28. Development of Low Temperature Deposition Process of Carbon Thin Film by Low Frequency 50Hz Plasma CVD.

    SHIMOZUMA Mitsuo, DATE Hiroaki, OHNO Hideo, TAGASHIRA Hiroaki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Developmental Scientific Research (B)

    Institution: College of Medical Technology, Hokkaido University

    1990 - 1991

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    Hydrogenated amorphous carbon (a-C : H) films show large thermal conductivity, chemical inertness, high electrical resistivity and breakdown field, and optical transparency, all of which are suitable for the coating material in microelectronics as well as in mechanical applications. A number of reports have been published on the preparation of a-C : H films by various methods. The low-temperature formation of such an a-C : H film is required for microelectronics application. The purpose of the present study is to deposited of amorphous carbon films on unheated substrate using low frequency 50Hz plasma CVD with hydrogen and methane (H_2+CH_4) mixtures. The results obtained may be summarized as below. 1) Major electrical and optical properties of the present a-C : H films were measured. The films were highly transparent and showed very uniform interference color. The refractive index, resistivity, breakdown field strength and the optical band gap of the obtained a-C : H film were 2.4, 10^<14> OMEGA cm, 10^6 V/cm and 4.0 eV, respectively. The deposition rate of a-C : H films under the condition specified above was 60 A/h. 2) Infrared absorption as well as Raman spectroscopy showed that the film predominantly consisted of sp^3-bonded C. 3) The electron temperature for H_2+CH_4 plasma at 50Hz to 13.56MHz plasma power frequency range was measured from the two-line radiance ratio method using the Balmer lines (Halpha, Hbeta). The electron temperature slowly decreased with increased plasma frequency below 200 kHz, but rapidly decreased between 200 kHz and 13.56MHz. The electron temperature was 16000 K at 1kHz and 8200 K at 13.56 MHz. Accordingly, it was deduced that the electron temperature of low-frequency plasmas is larger than that in high-frequency plasmas. 4) From these results, it appears that dissociation of H_2+CH_4 gas is accelerated by high temperature electrons in 50Hz plasma. Moreover, the positive ion in 50Hz plasmas bombard on the deposited film, and the bombarding ion energy is spent as migration energy for rearrangement of deposited atoms. Therefore, the deposited a-C : H films by the 50Hz plasma CVD have the high-quality properties without substrate heating.

  29. Growth and Characterization of Diluted Magnetic III-V Compound Semiconductors

    OHNO Hideo

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for General Scientific Research (B)

    Institution: Hokkaido University

    1990 - 1991

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    Molecular beam epitaxial (MBE) growth and electric and magnetic properties of diluted magnetic III-V semiconductors, especially (In, Mn) As, are studied. Following is a summary of the research results. Molecular Beam Epitaxial Growth : Maximum Mn concentration that can be incorporated into InAs lattice without having second phase (which is MnAs) is critically dependent on the growth temperature during MBE growth. At 300ﾟC, x (in In_<1-x>Mn_xAs) has to be<0.03 and the conduction is p-type whereas at 200ﾟC, x<0.25 and n-type. Characterization of Epitaxial layers : (1) Magnetism All n-type samples are paramagnetic and the direct interaction between Mn ions is antiferromagnetic with nearest neighbor J of -1.6 K. All p-type samples are paramagnetic at medium to high temperatures, but show spontaneous magnetization at low temperatures. Paramagnetic component which saturates only at high magnetic fields (4 to 9 T) is also present. The spontaneous magnetization makes up for 25 % of saturation magnetization at the lowest temperature (1.4K) investigated. (2) Electrical Properties n-type samples show negative magnetoresistance at low temperatures. No hysteresis is observed. The Hall resistance of p-type samples is dominated by anomalous Hall effect. At temperatures below 7.5 K, hysteresis appears in B dependence of Hall resistance together with negative magnetoresistance extending to high magnetic fields. Hysteresis is only observed in p-type samples. This can be explained by the presence of large magnetic polarons with canted spins inside. The origin of the canting is believed to be the exchange interaction between holes and Mn ions. The interaction is mostly ferromagnetic with spin texture (i. e. canting) due to spin-orbit interaction of to Mn-Mn antiferromagnetic interaction. Rotation of polarons gives rise to the spontaneous magnetization, whereas the alignment of spins with high magnetic fields results in paramagnetic response at high fields. This is the first observation of weak ferromagnetism due to localized carrier-spin exchange in diluted magnetic semiconductors.

  30. 低周波放電のプロセスプラズマとしての適用とその制御法の開発

    下妻 光夫, 大森 義行, 伊達 広行, 大野 英男, 本間 利久

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 北海道大学

    1990 - 1990

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    平成2年度の研究結果は、次ぎのようである。 高・低周波CVDにおけるプラズマの相違について、昨年度今年度と、50Hz〜13.56MHzの広範囲において電子・イオンのプラズマ中での挙動を、プラズマ発光分光分析などからプラズマの周波数特性を明らかにし、低周波プラズマCVD法の特徴を把握しようとして研究を進めてきた。50Hz〜13.56MHzの範囲でのプラズマ中の電子温度と放電維持電圧をH_2+CH_4、H_2のガスについて測定し、どちらの傾向も低周波領域で一定値を取り、数百kHz以上で急激に減少している。これは、低周波プラズマが高エネルギ-電子の密度が高いことを意味し、これまでの常識を覆す結果が明らかにされた。更に、H_2+CH_4プラズマの電極間発光位置分布測定で、50Hz、13.56MHzプラズマで大きな違いが見られHα、Hβの発光強度が13.56MHzプラズマで50Hzより著しく小さいことも明らかになった。更に、電極間の位置に対するプラズマ発光の時間変化について50Hzと100kHzの条件で測定を行なった。実験装置は、微弱発光の高速測定が要求されるため、観測発光波長を固定し(H_2^*( ^3Σ_o→ ^3Σ_u):220nm、Hα:650nm)、光電子増倍管を冷却器(ー15℃)に入れS/N比を上げ、広帯域アンプとボックスカ-インテグレ-タによりデ-タを得るように改良した。低周波条件では、電圧の正負極性に対する2回の発光が見られ、プラズマの発生に急俊な立上がりを見せ、電圧波形も急激に崩壊する。また、消滅時は印加電圧の減少に従い緩やかに消滅していくのが見られる。 また、低周波プラズマCVD法による薄膜堆積実験の進行状況は、シリコン酸化膜堆積を行なっている。TEOSを材料とした酸化膜堆積は、200℃程度の加熱が必要であったが、N_2O+SiH_4の材料ガスでは基板非加熱で良質膜堆積が可能であることがわかった。

  31. New Waveguides for Microwave Monolithic Integrated Circuits Using Distributed Parameter Effects of Semiconductor Carriers

    HASEGAWA Hideki, AKAZAWA Masamichi, IIZUKA Kouichi, FUKAI Ichirou

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for General Scientific Research (B)

    Institution: Hokkaido University

    1988 - 1989

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    The integration level of monolithic microwave integrated circuits (MMICs)is presently limited owing to large substrate area requirements for passive circuitry in spite of the advanced miniaturization of active semiconductor devices with fine-line lithography. In the present study, MIS (metal-insulator-semiconductor) and Schottky coplanar waveguides for application to MMICs are investigated theoretically and experimentally. They are formed on semi-insulating compound semiconductor substrates ( GaAs and InP) with epitaxial surface layers, and show remarkable slow-wave propagation due to distributed parameter effects of semiconductor carriers. Such waveguides can reduce the size of distributed parameter passive circuits. Additionally, their transmission properties can be altered by electrical bias, opening up the possibility of electrical tuning and of interesting non-linear interactions. Basic design principles of MIS and Schottky coplanar waveguides were established and an theoretical analysis of transmission properties was made, using an equivalent circuit approach. Analytical expressions on frequency and bias dependences of transmission properties were derived. Molecular beam epitaxy (MBE) was used to form GaAs and InGaAs surface semiconducting layers on GaAs and InP semi-insulating substrates. The GaAs Schottky-type coplanar waveguides showed slow-wave propagation, and their transmission properties including frequency and bias dependences, were found to be in good agreement with the theoretical prediction. Control of Fermi level pinning is obviously extremely important for practical exploitation of MIS coplanar waveguides with bias tuning capability. A novel passivation technique using an ultra-thin MBE silicon layer was developed, and it resulted in a very promising InGaAs MIS structures on InP without any indication of Fermi level pinning.

  32. 低周波放電のプロセスプラズマとしての適用とその制御法の開発

    下妻 光夫, 大森 義行, 伊達 広行, 大野 英男, 本間 利久

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 重点領域研究

    Institution: 北海道大学

    1988 - 1988

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    集積回路などにおけるプラズマを利用したドライプロセス技術は、ほとんどRFなど高周波電界を使って行なわれる。しかし、高周波では行なうことができない、低周波放電プラズマの特徴を生かした独自のプロセスと、それの制御法の開発がほとんど行なわれておらず、本研究の目的はこの点に付いて実験的に研究を行なうことにある。現在までに、窒化シリコン薄膜を50Hz低周波プラズマCVDで基板非加熱で良質な膜が大面積に均一に堆積できることを見出してきた。このメカニズムの究明を行なうことで低周波プラズマのプロセスへの応用が可能となる。この点に関して63年度の研究成果から、低周波プラズマの特徴であるイオンの可動性とプラズマの断続性が重要な役割をしていることが明らかになってきた。結果の要約として、1)プラズマ中の原子・分子イオンの堆積膜への射突による埋め込みで高密度薄膜形成がなされ、更にイオンの持つ運動エネルギーの射突後の原子再配列エネルギーへの変換による化学量論的な組成への薄膜生成、2)またプラズマ中の生成物(イオン、励起・解離・ラジカル種)の低周波プラズマの断続による発生消滅の結果として、プラズマ発生電圧とプラズマ維持電圧の上昇に伴うプラズマ内の電子エネルギー上昇によるガス分子の効率的な解離が、生成薄膜の物性的評価とプラズマ内電子エネルギー測定などから得られた。これらの事実から低周波プラズマCVDによる基板非加熱条件による良質薄膜堆積が可能ではないかと考えられる。これらをふまえ、高温での堆積が条件と考えられているダイヤモンドライクカーボン薄膜の堆積を低周波非加熱プラズマCVDでH_2+CH_4混合ガスを材料として薄膜堆積した結果、この薄膜が天然ダイヤの物性(電気的・工学的・物理的)に近い物であり、上記の考えが間違いではないことが認められた。今後の研究課題として、このプラズマの制御法について研究を進める予定である。

  33. Deveiopment of Room Temperature Deposition Process of Silicon Nitride Film by Low Frequency Plasma CVD.

    SHIMOZUMA Mitsuo, OHMORI Yoshiyuki, OHNO Hideo, TAGASHIRA Hiroaki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Developmental Scientific Research

    Institution: College of Medical Technology, Hokkaido University

    1986 - 1987

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    Silicon nitride films are being used extensively in the semiconductor technology for interlayer insulation and device surface passivation. Stoichiome-tric silicon nitrode Si_3n_4 can be deposited by thermal deposition at about 900 ゜C, and nearly stoichimetric silicon nitride films have been deposited by the high frequency plasma CVD method at low substrate temperature (200-300゜c). The purpose of the present study is to deposite of silicon nitride films at room temperature using low frequency(50Hz) plasma CVD with silane and nitrogen mixtures. The results obtained may be summarized as below. 1) Silicon nitride films have been deposited by low frequency(50Hz) plasma CVD using a nitsogen and silane mixture at room temperature. To deposit high quality silicon nitride, the silane fraction in the nitrogen and silane mixture has to be less than 5%. 2) The refractive index, breakdown field strenght and resistivity of the obtained silicon nitride film were 2.0, 1.2 x 1 0^1 V/cm and 6 x 1 0^<15> cm, respectively. 3) The distribution of film thickness on 5 inches Si wafer was 1000 <plus-minus> 30 <Ang>. 4) Fixed charge density and surface state density of Al/SiNx/SiO_2 /Si(MNOS) were about 1.5 x 1 0^<11> cm^<-2> and 8 x 10^<10> cm^<-2> ev^<-1> , respectively. substrate temperature dependence of the film properties were observed, and as high the temperature(<200゜c) is, the films become Si tich. However electrical properties were not changed. 5) The emission.intensity from silicon and nitrogen neutral and ionized molecule in nitrogen and silane mixture plasma with low frequency(50Hz) is large compared with that from RF(13.56MHz) plasma. 6) Since low frequency plasma can generate high electron energy plasma, which is required for good silicon nitride formation, high quality silicon nitride films can be grown without any assistance from heating of the substrate.

  34. 化合物半導体-絶縁体界面の物性と応用に関する研究

    長谷川 英機, 高橋 平七郎, 芳賀 哲也, 阿部 寛, 大野 英男

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 特別推進研究

    Institution: 北海道大学

    1985 - 1987

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    化合物反半導体集積回路においては, 集積回路の基本構成要素てある絶縁体-半導体界面の理解, 制御, 最適化がなされていない. これは, 回路の微細化・高密度集積化・高速化に向けて, 集積回路技術を今後さらに発展させる上での重大な障害となっている. 本研究は, 化合物半導体-絶縁体界面における基礎的な物性を解明し, それによって得られる学問的理解にもとづき界面物性を原子的な尺度で制御する新しい界面制御技術を確立し, 化合物半導体集積回路技術の今後の発展に寄与することを目的としている. 昭和62年度は, 前年度までに確立した界面物性とその制御に関する基礎的理解にもとづき, 大規模集積回路製作に適用可能な実用界面制御技術を確立する目的で研究を進め, 次の成果を得た. (1)化学エッチ, イオンエッチング, プラズマや種々の気体雰囲気への露出, 熱アニール等のプロセス工程中に, GaAs InPの表面・界面にひき起こされる組成・構造・結合状態の変化を解明し, 界面の電気的特性との相関を明らかにするとともに, 「DIGSモデル」の妥当性と「界面制御」の有効性を示した. (2)RBS/PIXE法および極微小領域分析観察装置を用いた分析法において, 原子的な尺度における格子乱れを定量化する手法を発展させ, 極微細集積化構造に対するプロセス評価技術として確立した. (3)表面・界面におけるキャリアの捕獲・放出, 再結合, フォトルミネセンスを, 理論的および実験的に解明した. (4)種々の界面制御層をもつ絶縁膜を用いIPMISFETを製作し, 界面制御の有効性を実証するとともに, 耐熱セルフアラインゲート化により, 大規模集積化への見通しを得た. (5)GaAs MESFETのサイドゲート現象を検討し, その構造を解明し, かつ, 界面制御の有効性を示した. (6)「統一DIGSモデル」が化合物半導体の半導体-半導体界面や非晶質シリコンの界面にも適用可能であるこはを示した.

  35. Feasibility Study of Traveling Wave Devices Using Compound Semiconductor Superlattice Structures

    FUKAI Ichiro, SHIMOZUMA Mitsuo, OHNO Hideo, HASEGAWA Hideki

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Developmental Scientific Research

    Institution: Hokkaido University

    1985 - 1986

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    The purpose of the research is to investigate the feasibility of new-type of traveling wave devices using compound semiconductor superlattice structures. The main results are the following: [1] Theoretical analysis of the traveling wave interactions was made on the superlattice structures with finite dimensions of semiconductor plasma. An ideal non-dispersive slow wave structure and an interdigital slow wave structure were studied with the latter involving a complicated self-consistent computer field analysis over space harmonic field components present in the semiconductor plasma of finite dimensions. The analysis has clearly shown the feasibility of microwave and millimeter-wave traveling wave devices. Importance of Debye screening length of plasma with respect to the active layer thickness was demonstrated and the advantage of superlattice structure was indicated. [2] Dielectric spacers with a high breakdown field strength and minimal deposition damage to Semiconductor active layers is essential for coupling between slow-wave and semiconductor carrier wave. For this purpose, a room temperature deposition process of PCVD silicon nitride was successfully developed, using 50Hz plasma. [3] Three kinds of interdigital traveling wave devices having n-GaAs MOVPE single layer, AlGaAs-GaAs MBE hetero structure layers and n-InP single layer as the active layer, respectively, were fabricated. Two-terminal admittance measurements clearly indicated presence of traveling wave interactions at microwave frequencies in all types of the experimental devices. Furthermore, the measured behavior of two-terminal admittance of the InP device showed an excellent agreement with the result of the detailed computer simulation, establishing the design philosophy for devices with the maximum interaction gain.

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Social Activities 14

  1. IEEE Magnetics Society Distinguished Lecturer

    2009/01 - 2009/12

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    世界各国の支部で講演

  2. 日本学術会議公開シンポジウム

    2012/11/26 -

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    「日本の復興・再生に向けた産学官連携の新しいありかた」パネル討論「イノベーションを支える産学官連携の課題」パネラー

  3. 三井業際研究所

    2012/10/24 -

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    「三井グループにおいて、異種業種間の業際分野における知識集団としての役割を果たすこと」を目的として活動している三井業際研究所において講演活動を行なった。

  4. 東北大学サイエンスカフェ

    2012/05/25 -

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    一般を対象に科学について気軽に話し合い、科学の楽しさと社会貢献の姿を知ってもらう。

  5. 東北大学艮陵同窓会140周年 東日本大震災復興プロジェクト

    2012/05/19 -

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    「鼎談塩野七生さんを囲んで 瓦礫と大理石：廃墟と繁栄」（鼎談者）

  6. スイス大使館・Guardian Angelsプロジェクト

    2012/02/15 -

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    セミナー＆レセプションにおいて講演を行なう

  7. 東北大学北海道交流会

    2011/11/12 -

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    「半導体の復興にむけて －スピントロニクスの集積システム応用ー」と題する講演

  8. 第4回東北大学国際シンポジウム

    2011/10/27 -

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    「スピントロニクス集積回路：待機電力ゼロの社会に向けて」講演

  9. SEMI Forum Japan 2011

    2011/05/31 -

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    先端CMOSデバイス・プロセスセミナー －グラフェン・スピンエレクトロニクス、次世代に向けたデバイスプロセス」において「スピントロニクスによる不揮発性VLSI」と題する招待講演を行なった。

  10. FIRSTサイエンスフォーラム

    2011/02/13 -

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    トップ科学者と若者で切り拓く未来「ワンダー：科学は自分の周りの驚きからはじまる！」

  11. 科学技術交流財団 わかしゃち奨励賞優秀提案発表会最優秀賞選考会基調講演

    2010/02 -

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    講演講師

  12. 長野県テクノ財団浅間テクノポリス地域センター

    2008/02 -

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    セミナー講師

  13. 日本真空協会

    2007/11 -

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    真空に関する連合講演会

  14. 北陸先端科学技術大学院大学

    2007/07 -

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    マテリアルサイエンス研究科セミナー講師

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Media Coverage 2

  1. 報道ステーション

    テレビ朝日

    2011/06/17

    Type: TV or radio program

  2. 東北大学の新世紀

    東日本放送

    2011/01/17

    Type: TV or radio program

Other 11

  1. 卓越した大学院拠点形成支援補助金

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    本学は情報通信技術分野とエレクトロニクス材料・デバイス開発に関わるナノテクノロジー分野の研究において長い歴史と実績を有する。これらを継承しながら独創的かつ国際性豊かな研究を行うことのできる人材育成をめざして、世界最高水準の研究開発のための体制を強化し、海外拠点を活用した国際的な教育環境を整備して若手研究者を養成している。

  2. 耐災害性に優れた安心・安全社会のためのスピントロニクス材料・デバイス基盤技術の研究開発

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    不揮発性ワーキングメモリを有する耐災害性に優れたコンピュータシステムを実現するために、20nm以下の寸法を有する微細な高速、大容量、耐環境性に優れ、かつ低消費電力を実現する不揮発性スピントロニクスメモリの材料・デバイス技術を開発するとともに、そのコンピュータシステムへの適用法をシミュレーションで明らかにし、耐災害性に優れた安心・安全社会のためにスピントロニクス材料・デバイス基盤技術を確立する。

  3. 省エネルギー・スピントロニクス論理集積回路の研究開発

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    電子の持つスピンを利用することで、エネルギーを使わずに情報を記憶することができるスピントロニクス素子を用いた半導体論理集積回路を世界に先駆けて開発する。これにより、従来に比べてエネルギー消費量が極めて少ない電子機器の開発につなげ、省エネルギー社会の実現に貢献する。

  4. 次世代高機能・低消費電力スピンデバイス基盤技術の開発

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    次世代高機能・低消費電力スピンデバイス基盤技術の開発

  5. スピンダイナミックスとその機能デバイス応用

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    スピンダイナミックスとその機能デバイス応用

  6. テラヘルツ帯量子カスケードレーザーの研究

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    テラヘルツ帯量子カスケードレーザーの研究

  7. 非磁性半導体中の電子スピンに関する研究

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    非磁性半導体中の電子スピンに関する研究

  8. 高機能・超低消費電力メモリの開発

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    高機能・超低消費電力メモリの開発

  9. 酸化亜鉛薄膜ショットキーダイオード

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    酸化亜鉛薄膜ショットキーダイオード

  10. 非平衡表面層の原子スケールダイナミクスと新物質の創生

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    非平衡表面層の原子スケールダイナミクスと新物質の創生

  11. III-V族をベースとする希薄磁性半導体とその量子構造

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    III-V族をベースとする希薄磁性半導体とその量子構造

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