THz Detection on Epitaxial Graphene FET by Photothermoelectric, Plasmonic, and Electric Field Assisting Mechanisms

Koichi Tamura, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Chao Tang, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Akira Satou, Taiichi Otsuji

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz　2024

DOI： 10.1109/IRMMW-THz60956.2024.10697613 　

ISSN： 2162-2027

eISSN： 2162-2035

Synthesis of Bi2Se3 and its application to sensitive and fast THz detection

Chao Tang, Koichi Tamura, Aoi Hamada, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Yuma Takida, Hiroaki Minamide, Hirokazu Fukidome, Tsung Tse Lin, Akira Satou, Taiichi Otsuji

Proceedings of SPIE - The International Society for Optical Engineering　13141　2024

DOI： 10.1117/12.3028676 　

ISSN： 0277-786X

eISSN： 1996-756X

Novel 3D-Rectification Mechanism of Terahertz Detection in Epitaxial Graphene Channel Transistors

Koichi Tamura, Hironobu Seki, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Chao Tang, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Akira Satou, Taiichi Otsuji

2024 Conference on Lasers and Electro-Optics, CLEO 2024　2024

Fast THz Detection by an Asymmetric-Dual-Grating-Gate Graphene-Channel FET Based on Plasmonic and Photothermoelectric Effects

Koichi Tamura, Shinnosuke Uchigasaki, Hironobu Seki, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz　2023/10/31

DOI： 10.1109/IRMMW-THz57677.2023.10299381 　

ISSN： 2162-2027

eISSN： 2162-2035

Fast and sensitive THz detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET based on plasmonic and photothermoelectric rectification effects

Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

Proceedings of SPIE - The International Society for Optical Engineering　12683　2023/10/04

DOI： 10.1117/12.2676102 　

ISSN： 0277-786X

eISSN： 1996-756X

Fast and Sensitive THz Detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET Due to Plasmonic and Photothermoelectric Rectification Effects

Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

2023 Conference on Lasers and Electro-Optics, CLEO 2023　2023/05/07

Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure

Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

APL Photonics　7　(12)　126101-126101　2022/12/01

DOI： 10.1063/5.0122305 　

eISSN： 2378-0967

Controlling the PT symmetry of Dirac plasmons in dual-grating-gate graphene THz laser transistors for ultrafast gain switching International-journal Peer-reviewed

Taiichi Otsuji, Akira Satou, Hirokazu Fukidome, Maxim Ryzhii, Victor Ryzhii, Koichi Narahara

CLEO: Conference on Lasers and Electro-Optics 2022　1　(1)　1-2　2022/05/19

DOI： 10.1364/CLEO_AT.2022.JTh3B.10 　

Environmental effects on layer-dependent dynamics of Dirac fermions in quasicrystalline bilayer graphene

Y. Zhao, T. Suzuki, T. Iimori, H. W. Kim, J. R. Ahn, M. Horio, Y. Sato, Y. Fukaya, T. Kanai, K. Okazaki, S. Shin, S. Tanaka, F. Komori, H. Fukidome, I. Matsuda

Physical Review B　105　(11)　2022/03/15

DOI： 10.1103/PhysRevB.105.115304 　

ISSN： 2469-9950

eISSN： 2469-9969

Graphene-based plasmonic metamaterial for terahertz laser transistors

Taiichi Otsuji, Stephane Albon Boubanga-Tombet, Akira Satou, Deepika Yadav, Hirokazu Fukidome, Takayuki Watanabe, Tetsuya Suemitsu, Alexander A. Dubinov, Vyacheslav V. Popov, Wojciech Knap, Valentin Kachorovskii, Koichi Narahara, Maxim Ryzhii, Vladimir Mitin, Michael S. Shur, Victor Ryzhii

Nanophotonics　11　(9)　1677-1696　2022/02/02

DOI： 10.1515/nanoph-2021-0651 　

eISSN： 2192-8614

Atomic arrangements of quasicrystal bilayer graphene: Interlayer distance expansion

Yuki Fukaya, Yuhao Zhao, Hyun Woo Kim, Joung Real Ahn, Hirokazu Fukidome, Iwao Matsuda

Physical Review B　104　(18)　2021/11/01

DOI： 10.1103/PhysRevB.104.L180202 　

ISSN： 2469-9950

eISSN： 2469-9969

Terahertz Detection by an Asymmetric Dual-Grating-Gate Graphene FET

Koichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Akira Satou, Yuma Takida, Hiroaki Minamide, Taiichi Otsuji

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz　2021-August　2021/08/29

DOI： 10.1109/IRMMW-THz50926.2021.9567489 　

ISSN： 2162-2027

eISSN： 2162-2035

Fast terahertz detection by asymmetric dual-grating-gate graphene FET

Koichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Akira Satou, Yuma Takida, Hiroaki Minamide, Taiichi Otsuji

2021 Device Research Conference (DRC)　2021-June　1-2　2021/06/20

DOI： 10.1109/drc52342.2021.9467191 　

ISSN： 1548-3770

eISSN： 2162-2035

High-quality few-layer graphene on single-crystalline sic thin film grown on affordable wafer for device applications International-journal

Norifumi Endoh, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo, Shigeru Konishi, Hiroshi Mogi, Minoru Kawahara, Makoto Kawai, Yoshihiro Kubota, Takuo Ohkochi, Masato Kotsugi, Koji Horiba, Hiroshi Kumigashira, Maki Suemitsu, Issei Watanabe, Hirokazu Fukidome

Nanomaterials　11　(2)　1-13　2021/02/04

DOI： 10.3390/nano11020392 　

eISSN： 2079-4991

Investigation of Terahertz properties in Graphene ribbons

Amine El Moutaouakil, Hirokazu Fukidome, Taiichi Otsuji

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz　2020-November　900-901　2020/11/08

DOI： 10.1109/IRMMW-THz46771.2020.9370592 　

ISSN： 2162-2027

eISSN： 2162-2035

Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy

Keiichi Omika, Kensuke Takahashi, Akira Yasui, Takuo Ohkochi, Hitoshi Osawa, Tsuyoshi Kouchi, Yasunori Tateno, Maki Suemitsu, Hirokazu Fukidome

Applied Physics Letters　117　(17)　171605-171605　2020/10/26

DOI： 10.1063/5.0020500 　

ISSN： 0003-6951

eISSN： 1077-3118

Electrical Transport Properties of Gate Tunable Graphene Lateral Tunnel Diodes Peer-reviewed

K. Shiga, T. Komiyama, Y. Fuse, H. Fukidome, A. Sato, T. Otsuji, T. Uchino

Jpn. J. Appl. Phys　59　(SI)　2020/04/13

DOI： 10.35848/1347-4065/ab83de 　

ISSN： 0021-4922

eISSN： 1347-4065

Influence of interface dipole layers on the performance of graphene field effect transistors Peer-reviewed

Nagamura N, Fukidome H, Nagashio K, Horiba K, Ide T, Funakubo K, Tashima K, Toriumi A, Suemitsu M, Horn K, Oshima M

Carbon　152　680-687　2019/11

DOI： 10.1016/j.carbon.2019.06.038 　

ISSN： 0008-6223

Electrical Characteristics of Gate Tunable Graphene Lateral Tunnel Diodes Peer-reviewed

K. Shiga, T. Komiyama, Y. Fuse, H. Fukidome, A. Sato, T. Otsuji, T. Uchino

MNC 2019, 32nd International Microprocesses and Nanotechnology Conference　31-A-8　2019/10/28

Ultrafast Unbalanced Electron Distributions in Quasicrystalline 30° Twisted Bilayer Graphene International-journal Peer-reviewed

Takeshi Suzuki, Takushi Iimori, Sung Joon Ahn, Yuhao Zhao, Mari Watanabe, Jiadi Xu, Masami Fujisawa, Teruto Kanai, Nobuhisa Ishii, Jiro Itatani, Kento Suwa, Hirokazu Fukidome, Satoru Tanaka, Joung Real Ahn, Kozo Okazaki, Shik Shin, Fumio Komori, Iwao Matsuda

ACS Nano　13　(10)　11981-11987　2019/10/22

DOI： 10.1021/acsnano.9b06091 　

ISSN： 1936-0851

eISSN： 1936-086X

Improved surface-enhanced Raman spectroscopy (SERS) sensitivity by graphene

SHIGA K, IMAI K, KUSANO M, FUKIDOME H, SATOU A, OTSUJI T, UCHINO T

電気関係学会東北支部連合大会講演論文集(CD-ROM)　2019　2019/08/22

Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications

Kwan Soo Kim, Hirokazu Fukidome, Maki Suemitsu

Sensors and Materials　31　(7)　2291-2301　2019/07/19

DOI： 10.18494/SAM.2019.2317 　

ISSN： 0914-4935

Modulation of electronic states near electrodes in graphene transistors observed by operando photoelectron nanospectroscopy Peer-reviewed

Fukidome H, Funakubo K, Nagamura N, Horiba K, Tateno Y, Oshima M, Suemitsu M

Sensors and Materials　31　(7)　2303-2311　2019/07/19

DOI： 10.18494/SAM.2019.2327 　

ISSN： 0914-4935

Terahertz photoluminescence from narrow gap HgTe/CdHgTe heterostructures and multilayer graphene Peer-reviewed

V.V. Utochkin, S.V. Morozov, M.A. Fadeev, V.V. Rumyantsev, N.N. Mikhailov, S.A. Dvoretsky, T. Komiyama, T. Watanabe, H. Fukidome, A. Satou, T. Otsuji

RJUSE2019: 8th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, & GDR-I FIR-LAB Workshop Dig., Nizhny Novgorod, Russia,　1　(1)　P-13-1-2　2019/07/08

Graphene-based 2D-heterostructures for terahertz lasers and amplifiers Invited Peer-reviewed

D. Yadav, S. Boubanga-Tombet, A. Satou, T. Tamamushi, T. Watanabe, T. Suemitsu, H. Fukidome, M. Suemitsu, A. A. Dubinov, V. V. Popov, M. Ryzhii, V. Mitin, M. S. Shur, V. Ryzhii, T. Otsuji

Proc. SPIE [SPIE Photonics West, Conference 10917: Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII, San Fransisco, CA, USA]　10917　109170G-1-10　2019/03/01

DOI： 10.1117/12.2516494 　

ISSN： 0277-786X

eISSN： 1996-756X

Element- and Site-Specific Many-Body Interactions in Few-Layer MoS2 During X-Ray Absorption Processes Peer-reviewed

Kamada Gen, Venugopal Gunasekaran, Kotsugi Masato, Ohkochi Takuo, Suemitsu Maki, Fukidome Hirokazu

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　216　(2)　2019/01/23

DOI： 10.1002/pssa.201800539 　

ISSN： 1862-6300

eISSN： 1862-6319

Fabrication of Gate Tunable Graphene Lateral Tunnel Diodes Peer-reviewed

T. Uchino, K. Shiga, K. Sugawara, H. Fukidome, A. Satou, T. Otsuji

2018 MRS Fall Meeting Dig., Hynes Convention Center, Boston, MA, USA,　1　(1)　NM01.07.16　2018/11/25

Operando soft X-ray spectromicroscopic measurement and the use for high-performance devices and circuits

Hirokazu Fukidome

Monatomic Two-Dimensional Layers: Modern Experimental Approaches for Structure, Properties, and Industrial Use　199-216　2018/09/28

DOI： 10.1016/B978-0-12-814160-1.00007-1 　

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy International-journal Peer-reviewed

Omika Keiichi, Tateno Yasunori, Kouchi Tsuyoshi, Komatani Tsutomu, Yaegassi Seiji, Yui Keiichi, Nakata Ken, Nagamura Naoka, Kotsugi Masato, Horiba Koji, Oshima Masaharu, Suemitsu Maki, Fukidome Hirokazu

SCIENTIFIC REPORTS　8　(1)　13268-13268　2018/09/05

DOI： 10.1038/s41598-018-31485-4 　

ISSN： 2045-2322

eISSN： 2045-2322

Enhancement of CO2 adsorption on oxygen-functionalized epitaxial graphene surface under near-ambient conditions International-journal Peer-reviewed

Yamamoto Susumu, Takeuchi Kaori, Hamamoto Yuji, Liu Ro-Ya, Shiozawa Yuichiro, Koitaya Takanori, Someya Takashi, Tashima Keiichiro, Fukidome Hirokazu, Mukai Kozo, Yoshimoto Shinya, Suemitsu Maki, Morikawa Yoshitada, Yoshinobu Jun, Matsuda Iwao

PHYSICAL CHEMISTRY CHEMICAL PHYSICS　20　(29)　19532-19538　2018/08/07

DOI： 10.1039/c8cp03251c 　

ISSN： 1463-9076

eISSN： 1463-9084

Interfacial carrier dynamics of graphene on SiC, traced by the full-range time-resolved core-level photoemission spectroscopy Peer-reviewed

Someya T, Fukidome H, Endo N, Takahashi K, Yamamoto S, Matsuda I

Applied Physics Letters　113　(5)　2018/07/30

DOI： 10.1063/1.5043223 　

ISSN： 0003-6951

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air Peer-reviewed

Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Someya Takashi, Iimori Takushi, Komori Fumio, Matsuda Iwao, Maki Suemitsu

Carbon　130　792-798　2018/04/01

DOI： 10.1016/j.carbon.2018.01.074 　

ISSN： 0008-6223

Simple formation of quasi-free-standing epitaxial graphene (QFSEG) using microwave annealing

Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Takashi Someya, Takushi Iimori, Fumio Komori, Iwao Matsuda, Maki Suemitsu

ISEG-2017　2017/11/23

Quantification of Surface Electron Trapping of GaN Transistors by Using Operando Soft X-ray Photoelectron Nanospectroscopy

H. Fukidome, K. Omika, Y. Tateno, T. Kouchi, T. Komatani, N. Nagamura, S. Konno, Y. Takahashi, M. Kotsugi, K. Horiba, M. Suemitsu, M. Oshima

ISSS-8 2017　2017/10/26

Atomic-scale characterization of the interfacial phonon in graphene/SiC Peer-reviewed

Emi Minamitani, Ryuichi Arafune, Thomas Frederiksen, Tetsuya Suzuki, Syed Mohammad Fakruddin Shahed, Tomohiro Kobayashi, Norifumi Endo, Hirokazu Fukidome, Satoshi Watanabe, Tadahiro Komeda

PHYSICAL REVIEW B　96　(15)　2017/10/15

DOI： 10.1103/PhysRevB.96.155431 　

ISSN： 2469-9950

eISSN： 2469-9969

Temperature Dependence of the Conductivity in a Dual Gate Graphene Field Effect Transistor

K. Sugawara, T. Watanabe, D. Yadav, T. Komiyama, Y. Fuse, M. Ryzhii, V. Ryzhii, H. Fukidome, M. Suemitsu, T. Otsuji

RJUSE 2017　2017/10/03

Fabrication of multi-layer Bi2Se3 devices and observation of anomalous electrical transport behaviors Peer-reviewed

Venugopal Gunasekaran, Goon-Ho Park, Maki Suemitsu, Hirokazu Fukidome

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　68　128-132　2017/09

DOI： 10.1016/j.mssp.2017.06.010 　

ISSN： 1369-8001

eISSN： 1873-4081

Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing Peer-reviewed

Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu

Japanese Journal of Applied Physics　56　(6)　06GF09-1-06GF09-5　2017/05/09

DOI： 10.7567/JJAP.56.06GF09 　

ISSN： 0021-4922

eISSN： 1347-4065

Suppression of supercollision carrier cooling in high mobility graphene on SiC(000(1)over-bar) Peer-reviewed

Takashi Someya, Hirokazu Fukidome, Hiroshi Watanabe, Takashi Yamamoto, Masaru Okada, Hakuto Suzuki, Yu Ogawa, Takushi Iimori, Nobuhisa Ishii, Teruto Kanai, Keiichiro Tashima, Baojie Feng, Susumu Yamamoto, Jiro Itatani, Fumio Komori, Kozo Okazaki, Shik Shin, Iwao Matsuda

PHYSICAL REVIEW B　95　(16)　2017/04/19

DOI： 10.1103/PhysRevB.95.165303 　

ISSN： 2469-9950

eISSN： 2469-9969

Adsorption of CO2 on Graphene: A Combined TPD, XPS, and vdW-DF Study Peer-reviewed

Kaori Takeuchi, Susumu Yamamoto, Yuji Hamamoto, Yuichiro Shiozawa, Keiichiro Tashima, Hirokazu Fukidome, Takanori Koitaya, Kozo Mukai, Shinya Yoshimoto, Maki Suemitsu, Yoshitada Morikawa, Jun Yoshinobu, Iwao Matsuda

JOURNAL OF PHYSICAL CHEMISTRY C　121　(5)　2807-2814　2017/02/09

DOI： 10.1021/acs.jpcc.6b11373 　

ISSN： 1932-7447

eISSN： 1932-7455

Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates Peer-reviewed

Fuminori Mitsuhashi, Masaya Okada, Yasunori Tateno, Takashi Nakabayashi, Masaki Ueno, Hiroyuki Nagasawa, Hirokazu Fukidome, Maki Suemitsu

MRS Advances　2　(1)　51-56　2016/12/20

DOI： 10.1557/adv.2016.635 　

ISSN： 2059-8521

eISSN： 2059-8521

Making and revealing stacking structure of high quality graphenegrown on SiC(000-1) substrate

K. Tashima, R. Suto, H. Fukidome, M. Suemitsu, K. Horiba, H. Kumigashira, M. Kotsugi, T. Ohkochi

ICSPM23　2016/12/10

Solution-Based Formation of High Quality Gate Dielectrics on Graphene Using Microwave-Assisted Annealing

K.S. Kim, G.H. Park, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu

MNC 2016　2016/11/10

InP HEMT and graphene FET for optical to sub-THz carrier frequency conversion Peer-reviewed

A. Satou, K. Sugawara, G. Tamamushi, T. Watanabe, A. Dobroiu, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, T. Otsuji

RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., Sendai, Miyagi, Japan　1　(1)　182-185　2016/11/01

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors Peer-reviewed

Goon-Ho Park, Kwan-Soo Kim, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(9)　091502-1-091502-5　2016/09

DOI： 10.7567/JJAP.55.091502 　

ISSN： 0021-4922

eISSN： 1347-4065

Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion Peer-reviewed

M. Hasegawa, K. Tashima, M. Kotsugi, T. Ohkochi, M. Suemitsu, H. Fukidome

APPLIED PHYSICS LETTERS　109　(11)　111604-1-111604-5　2016/09

DOI： 10.1063/1.4962840 　

ISSN： 0003-6951

eISSN： 1077-3118

Solution-processed Al

Park Goon-Ho, Kim Kwan-Soo, Fukidome Hirokazu, Suemitsu Tetsuya, Otsuji Taiichi, Cho Won-Ju, Suemitsu Maki

Jpn. J. Appl. Phys.　55　(9)　91502-91502　2016/08/26

DOI： 10.7567/JJAP.55.091502 　

ISSN： 0021-4922

Operando X-ray spectromicroscopy on graphene transistors Invited

Hirokazu Fukidome

Global Graphene Forum　2016/08/24

Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110) Peer-reviewed

Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

DIAMOND AND RELATED MATERIALS　67　51-53　2016/08

DOI： 10.1016/j.diamond.2016.02.020 　

ISSN： 0925-9635

eISSN： 1879-0062

Graphene on C-terminated face of 4H-SiC observed by noncontact scanning nonlinear dielectric potentiometry Peer-reviewed

Kohei Yamasue, Hirokazu Fukidome, Keiichiro Tashima, Maki Suemitsu, Yasuo Cho

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(8)　08NB02-1-08NB02-5　2016/08

DOI： 10.7567/JJAP.55.08NB02 　

ISSN： 0021-4922

eISSN： 1347-4065

A fitting model for extraction of intrinsic transistor parameters in graphene FETs Peer-reviewed

J. Mitsushio, G. Tamamushi, K. Sugawara, A. Satou, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., Hakodake, Hokkaido, Japan　1　(1)　A7-5-1-5　2016/07/06

Sub-THz Photonic Double-Mixing Conversion Using Transistors Peer-reviewed

A. Satou, K. Sugawara, G. Tamamushi, T. Watanabe, A. Dobroiu, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, T. Otsuji

AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., Hakodake, Hokkaido, Japan　1　(1)　A5-5-1-6　2016/07/05

Observation of insulating and metallic-type behavior in Bi₂Se₃ transistor at room temperature Peer-reviewed

V. Gunasekaran, G.H. Park, K.S. Kim, M. Suemitsu, H. Fukidome

NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2016　7　(3)　565-568　2016/07

Observation of nanoscopic charge-transfer region at metal/MoS2 interface Peer-reviewed

Ryota Suto, Gunasekaran Venugopal, Keiichiro Tashima, Naoka Nagamura, Koji Horiba, Maki Suemitsu, Masaharu Oshima, Hirokazu Fukidome

MATERIALS RESEARCH EXPRESS　3　(7)　2016/07

DOI： 10.1088/2053-1591/3/7/075004 　

ISSN： 2053-1591

eISSN： 2053-1591

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process Peer-reviewed

Goon-Ho Park, Kwan-Soo Kim, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(6)　06GF11-1-06GF11-4　2016/06

DOI： 10.7567/JJAP.55.06GF11 　

ISSN： 0021-4922

eISSN： 1347-4065

Evaluations of crystal defects of 3C-SiC ((1)over-bar(1)over-bar(1)over-bar) film on Si(110) substrate Peer-reviewed

Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　213　(5)　1125-1129　2016/05

DOI： 10.1002/pssa.201532675 　

ISSN： 1862-6300

eISSN： 1862-6319

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors Peer-reviewed

Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Hussin Mastura, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun-Ichi Kani, Jun Terada, Taiichi Otsuji

JOURNAL OF LIGHTWAVE TECHNOLOGY　34　(8)　2011-2019　2016/04

DOI： 10.1109/JLT.2015.2505146 　

ISSN： 0733-8724

eISSN： 1558-2213

グラフェンFETにおける真性トランジスタパラメータ抽出用モデルの評価 Peer-reviewed

満塩純希, 玉虫元, 菅原健太, 佐藤昭, 末光哲也, 吹留博一, 末光眞希, 尾辻泰一

第63回応用物理学会春季学術講演会予稿集　63rd　2016/03/19

3D nanoscale controle of interface chemistry of GaN-based transistor

Keiichi Omika, Yasunori Tateno, Tsutomu Komatani, Tsuyoshi Kouchi, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Maki Suemitsu, Masaharu Oshima, Hirokazu Fukidome

SSNS'16　2016/01/14

Ultrafast carrier dynamics of two-dimensional Dirac-Fermion in graphene

Someya T., Fukidome H., Watanabe H., Okada M., Ogawa Y., Yamamoto T., Iimori T., Tashima K., Yamamoto S., Komori F., Okazaki K., Shin S., Matsuda I.

Meeting Abstracts of the Physical Society of Japan　71　(2)　1375-1375　2016

DOI： 10.11316/jpsgaiyo.71.2.0_1375 　

ISSN： 2189-079X

Single-Mode Terahertz Emission from Current-Injection Graphene-Channel Transistor under Population Inversion Peer-reviewed

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Junki Mitsushio, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)　1　(1)　225-226　2016

DOI： 10.1109/DRC.2016.7548491 　

ISSN： 1548-3770

Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature Peer-reviewed

Gunasekaran Venugopal, Maki Suemitsu, Hirokazu Fukidome

NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS,　7　565-568　2016

グラフェンチャネルFETにおける真性パラメータの抽出

玉虫元, 菅原健太, 佐藤昭, 田島圭一郎, 吹留博一, 末光眞希, 尾辻泰一

信学技報　114　(387)　63-68　2015/12/21

Photonic frequency conversion using graphene FETs for future fully coherent access network Peer-reviewed

Kenta Sugawara, Tetsuya Kawasaki, Mastura Binti Hussin, Gen Tamamushi, Maki Suemitsu, Hirokazu Fukidome, Katsumi Iwatsuki, Tetsuya Suemitsu, Victor Ryzhii, Taiichi Otsuji, Jun-Ichi Kani, Jun Terada, Shigeru Kuwano

2015 Opto-Electronics and Communications Conference, OECC 2015　1　(1)　1-3　2015/11/30

DOI： 10.1109/OECC.2015.7340108 　

High Performance Self-Aligned Graphene Transistors using Contamination-Free Process Peer-reviewed

Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

MNC 2015　2015/11/10

Ni-assisted low-temperature formation of epitaxial graphene on3C-SiC/Si and real-time SR-XPS analysis of its reaction Peer-reviewed

Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Hirokazu Fukidome, Maki Suemitsu

2015 International Conference of Silicon Carbide and Related Materials　2015/10/08

In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si International-journal Peer-reviewed

Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, Maki Suemitsu

NANOSCALE RESEARCH LETTERS　10　(421)　(total : 6pages)-421　2015/10

DOI： 10.1186/s11671-015-1131-9 　

ISSN： 1556-276X

eISSN： 1556-276X

Ultrafast carrier dynamics in graphene by using femtosecond time-resolved photoelectron spectroscopy Invited Peer-reviewed

染谷 隆史, 吹留 博一, 石田 行章, 吉田 力矢, 山本 達, 板谷 治郎, 小森 文夫, 辛 埴, 松田 巌

Hyomen Kagaku　36　(8)　418-423　2015/08/20

DOI： 10.1380/jsssj.36.418 　

ISSN： 0388-5321

Epitaxial Graphene on Si(111) and Si(100) by the Oxygen-Induced Annealing Method Peer-reviewed

Tai Yokoyama, Kei Imaizumi, Hirokazu Fukidome, Akitaka Yoshigoe, Yuden Teraoka, Maki Suemitsu

SPring-8/SACLA Research Report　3　(2)　356-359　2015/07/21

DOI： 10.18957/rr.3.2.356 　

ISSN： 2187-6886

二次元原子薄膜の材料物性とデバイス特性を繋ぐ高輝度放射光オペランド顕微分光 Invited Peer-reviewed

吹留博一

表面科学　36　(6)　303-308　2015/06/01

DOI： 10.1380/jsssj.36.303 　

ISSN： 0388-5321

Interfacial Charge States in Graphene on SiC Studied by Noncontact Scanning Nonlinear Dielectric Potentiometry International-journal Peer-reviewed

Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho

PHYSICAL REVIEW LETTERS　114　(22)　226103-1-226103-5　2015/06

DOI： 10.1103/PhysRevLett.114.226103 　

ISSN： 0031-9007

eISSN： 1079-7114

Interfacial Charge States in Graphene on SiC Studied by Noncontact Scanning Nonlinear Dielectric Potentiometry Peer-reviewed

Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho

PHYSICAL REVIEW LETTERS　114　(22)　226103-1-226103-5　2015/06

DOI： 10.1103/PhysRevLett.114.226103 　

ISSN： 0031-9007

eISSN： 1079-7114

Operando Analysis of Field-Effect of Graphene Transistors Invited

Hirokazu Fukidome

EMN Phuket Meeting　2015/05/06

Sub-THz mixer application of graphene channel FET

K. Sugawara, T. Kawasaki, M.B. Hussin, G. Tamamushi, M. Suemitsu, H. Fukidome, J. Kani, J. Terada, S. Kuwano, K. Iwatsuki, T. Suemitsu, T. Otsuji

62nd JSAP Spring Meeting, Hiratsuka, Mar. 11-14　62nd　13a-A14-9　2015/03/13

High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure Peer-reviewed

Sai Jiao, Yuya Murakami, Hiroyoki Nagasawa, Hirokazu Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu

Materials Science Forum　806　89-93　2015

DOI： 10.4028/www.scientific.net/MSF.806.89 　

ISSN： 0255-5476

eISSN： 1662-9752

Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network Peer-reviewed

Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki, Shigeru Kuwano, Jun-ichi Kani, Jun Terada, Taiichi Otsuji

ECOC 2015 41ST EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION　115　(407(OCS2015 88-99))　1-3　2015

DOI： 10.1109/ECOC.2015.7341625 　

ISSN： 0913-5685

High Carrier Mobility Graphene-Channel FET Using SiN Gate Stack Peer-reviewed

Gen Tamamushi, Kenta Sugawara, Mastura Binti Hussin, Tetsuya Suemitsu, Ryota Suto, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

2015 Compound Semiconductor Week (CSW)　2015

Correlation between the residual stress in 3C-SiC/Si epifilm and the quality of epitaxial graphene formed thereon Peer-reviewed

R. Bantaculo, H. Fukidome, M. Suemitsu

1ST INTERNATIONAL CONFERENCE IN APPLIED PHYSICS AND MATERIALS SCIENCE　79　(1)　12004-1-12004-7　2015

DOI： 10.1088/1757-899X/79/1/012004 　

ISSN： 1757-8981

eISSN： 1757-899X

Investigation of Hydrogen-Intercalated Graphene on 4H-SiC(0001) by Noncontact Scanning Nonlinear Dielectric Microscopy Peer-reviewed

Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho

ecoss30　2014/09/04

Soft X-ray spectromicroscopic study on graphene toward device applications Invited Peer-reviewed

Hirokazu Fukidome, Kotsugi Masato, Hiroki Hibino

SPring-8 Research Frontiers 2013　2013　(1)　2014/08

High-Resolution Imaging of Hydrogen-Intercalated Graphene on 4H-SiC(0001) Using Non-Contact Scanning Nonlinear Dielectric Microscopy Peer-reviewed

Kohei Yamasue, H. Fukidome, K. Funakubo, M. Suemitsu, Y. Cho

ICN+T 2014 , ABSTRACTS　2014/07/21

Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy Peer-reviewed

Hirokazu Fukidome, Kousuke Nagashio, Naoka Nagamura, Keiichiro Tashima, Kazutoshi Funakubo, Koji Horiba, Maki Suemitsu, Akira Toriumi, Masaharu Oshima

APPLIED PHYSICS EXPRESS　7　(6)　2014/06

DOI： 10.7567/APEX.7.065101 　

ISSN： 1882-0778

eISSN： 1882-0786

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication International-journal Peer-reviewed

Hirokazu Fukidome, Takayuki Ide, Yusuke Kawai, Toshihiro Shinohara, Naoka Nagamura, Koji Horiba, Masato Kotsugi, Takuo Ohkochi, Toyohiko Kinoshita, Hiroshi Kumighashira, Masaharu Oshima, Maki Suemitsu

SCIENTIFIC REPORTS　4　5173-5173　2014/06

DOI： 10.1038/srep05173 　

ISSN： 2045-2322

eISSN： 2045-2322

Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate Peer-reviewed

T. Someya, H. Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, Sh Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, M. Suemitsu, J. Itatani, F. Komori, S. Shin, I. Matsuda

APPLIED PHYSICS LETTERS　104　(16)　2014/04

DOI： 10.1063/1.4871381 　

ISSN： 0003-6951

eISSN： 1077-3118

Epitaxial graphene formation on 3C-SiC/Si thin films Invited Peer-reviewed

Maki Suemitsu, Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Isao Makabe, Takashi Nakabayashi

JOURNAL OF PHYSICS D-APPLIED PHYSICS　47　(9)　094016-1-094016-11　2014/03

DOI： 10.1088/0022-3727/47/9/094016 　

ISSN： 0022-3727

eISSN： 1361-6463

Epitaxial graphene formation on 3C-SiC/Si thin films Invited Peer-reviewed

Maki Suemitsu, Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Isao Makabe, Takashi Nakabayashi

JOURNAL OF PHYSICS D-APPLIED PHYSICS　47　(9)　2014/03

DOI： 10.1088/0022-3727/47/9/094016 　

ISSN： 0022-3727

eISSN： 1361-6463

Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact International-journal Peer-reviewed

Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu, Toyohiko Kinoshita

SCIENTIFIC REPORTS　4　3713-1-3713-5　2014/01

DOI： 10.1038/srep03713 　

ISSN： 2045-2322

eISSN： 2045-2322

XRD and Raman-Spectroscopic Evaluation of Graphene on 3C-SiC(111)/Vicinal Si(111) Substrate Peer-reviewed

Naoki Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome, M. Suemitsu

Abstract pf ALC'13　38-38　2013/12/02

Coherent nanoscale optical-phonon wave packet in graphene layers Peer-reviewed

I. Katayama, K. Sato, S. Koga, J. Takeda, S. Hishita, H. Fukidome, M. Suemitsu, M. Kitajima

PHYSICAL REVIEW B　88　(24)　356506-1-356506-5　2013/12

DOI： 10.1103/PhysRevB.88.245406 　

ISSN： 1098-0121

eISSN： 1550-235X

Solution-processed Al2O3 for gate dielectrics in the Top-Gated Graphene Field Effect Transistors

G.-H. Park, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu

Abstract book of MNC2013　7P-7-118L-7P-7-118L　2013/11/05

Microscopic Control of Epitaxial Graphene on SiC(111) and SiC(100) Thin Films on a Microfabricated Si(100) Substrate (Session GR+EM+NS+PS+SS+TF-MoM)

H. Fukidome, T. Ide, M. Suemitsu, Y. Kawai, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima

Abstract book of AVS 60th International Symposium & Exhibition　12-12　2013/10/26

From 3C-SiC growth to graphene formation using 4H-AlN(0001)/Si(111) heterostructure Invited

Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu

2013 JSAP-MRS Joint Symposia　2013/09/16

Emergence of Pseudoelectromagnetic Field in Epitaxial Graphene on Microfabricated Substrate Invited Peer-reviewed

Hirokazu Fukidome, Msato Kotsugi, Yusuke Kawai, Takayuki Ide, Takuo Ohkouchi, Toyohiko Kinoshita, Maki Suemitsu

Journal of The Surface Science Society of Japan (HYOMEN KAGAKU)　34　(7)　380-384　2013/07/23

DOI： 10.1380/jsssj.34.380 　

ISSN： 0388-5321

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique Peer-reviewed

Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

PROCEEDINGS OF THE IEEE　101　(7)　1603-1608　2013/07

DOI： 10.1109/JPROC.2013.2258651 　

ISSN： 0018-9219

Site-Selective Epitaxy of Graphene on Si Wafers Invited Peer-reviewed

Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu

PROCEEDINGS OF THE IEEE　101　(7)　1557-1566　2013/07

DOI： 10.1109/JPROC.2013.2259131 　

ISSN： 0018-9219

eISSN： 1558-2256

High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure Peer-reviewed

S. Jiao, Y. Murakami, Y. Tateno, T. Nakabayashi, H. Fukidome, M. Suemitsu

Book of Abstracts for 5th Conference on SiC Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and devices for Power Electronics applications　2013/06/17

High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure Peer-reviewed

S. Jiao, Y. Murakami, Y. Tateno, T. Nakabayashi, H. Fukidome, M. Suemitsu

HeteroSic-WASMPE2013　2013/06/17

Microscopic Control of structural and electronic properties of graphene by growing on SiC thin film on a microfabricated Si substrate Peer-reviewed

H. Fukidome, T. Ide, Y. Kawai, M. Suemitsu, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima

Abstract in Graphene Week2013　278-278　2013/06/07

Microscopic Control of structural and electronic properties of graphene by growing on SiC thin film on a microfabricated Si substrate Peer-reviewed

H. Fukidome, T. Ide, Y. Kawai, M. Suemitsu, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima

Graphene Week 2013　278-278　2013/06/07

Direct observation of charge transfer region at interfaces in graphene devices Peer-reviewed

Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Masaharu Oshima, Hirokazu Fukidome, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi

APPLIED PHYSICS LETTERS　102　(24)　241604-1-241604-5　2013/06

DOI： 10.1063/1.4808083 　

ISSN： 0003-6951

Discharge instability at patterned conductive layers on insulating substrates during pulsed-plasma chemical vapor deposition under near atmospheric pressures Peer-reviewed

Yohei Inayoshi, Hirokazu Fukidome, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima, Maki Suemitsu

e-Journal of Surface Science and Nanotechnology　11　47-52　2013/04/06

DOI： 10.1380/ejssnt.2013.47 　

ISSN： 1348-0391

eISSN： 1348-0391

Discharge instability at patterned conductive layers on insulating substrates during pulsed-plasma chemical vapor deposition under near atmospheric pressures Peer-reviewed

Yohei Inayoshi, Hirokazu Fukidome, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima, Maki Suemitsu

e-Journal of Surface Science and Nanotechnology　11　47-52　2013/04/06

DOI： 10.1380/ejssnt.2013.47 　

ISSN： 1348-0391

eISSN： 1348-0391

Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates Invited

S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, M. Suemitsu

The International Conference on Silicon Carbide and Related Materials (ICSCRM2013)　2013/02/12

Rotated epitaxy of 3C-SiC(111) on Si(110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy Peer-reviewed

Shota Sambonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov, Maki Suemitsu

SILICON CARBIDE AND RELATED MATERIALS 2012　740-742　339-+　2013

DOI： 10.4028/www.scientific.net/MSF.740-742.339 　

ISSN： 0255-5476

High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon Peer-reviewed

Maki Suemitsu, Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov

SILICON CARBIDE AND RELATED MATERIALS 2012　740-742　327-+　2013

DOI： 10.4028/www.scientific.net/MSF.740-742.327 　

ISSN： 0255-5476

eISSN： 1662-9752

Rotated epitaxy of 3C-SiC(111) on Si(110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy Peer-reviewed

Shota Sambonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov, Maki Suemitsu

SILICON CARBIDE AND RELATED MATERIALS 2012　740-742　339-+　2013

DOI： 10.4028/www.scientific.net/MSF.740-742.339 　

ISSN： 0255-5476

eISSN： 1662-9752

Graphene materials and devices in terahertz science and technology Invited Peer-reviewed

Taiichi Otsuji, Stephane Albon Boubanga Tombet, Akira Satou, Hirokazu Fukidome, Maki Suemitsu, Eiichi Sano, Vyacheslav Popov, Maxim Ryzhii, Victor Ryzhii

MRS BULLETIN　37　(12)　1235-1243　2012/12

DOI： 10.1557/mrs.2012.241 　

ISSN： 0883-7694

Oxygen-plasma formation of alumina for a gate dielectric in graphene field effect transistors Peer-reviewed

G.H. Park, M.H. Jung, H. Fukidome, T. Suemitsu, T.Otsuji, M. Suemitsu

ISGD: International Symposium on Graphene Devices DIg., Soleil, France, Nov. 5, 2012.　1　(1)　PO-18　2012/11/08

Graphene/SiC/Si back-gated FETs with different SiC layer thickness

T. Eto, S. Takabayashi, S. Sanbonsuge, S. Inomata, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji

73rd JSAP Fall Meeting, Matsuyama, Japan, Sep. 11-14　73rd　13p-C2-8　2012/09/13

THz Coherent Phonons in Graphene on Silicon Peer-reviewed

M. Suemitsu, M. H. Jung, H. Fukidome, I. Katayama, J. Takeda, M. Kitajima

第2回テラヘルツナノ科学国際会議(2nd International Symposium on Terahertz Nanoscience)　2012/09/02

Graphene-based devices in terahertz science and technology Invited Peer-reviewed

T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, V. Ryzhii

JOURNAL OF PHYSICS D-APPLIED PHYSICS　45　(30)　303001-1-303001-10　2012/08

DOI： 10.1088/0022-3727/45/30/303001 　

ISSN： 0022-3727

eISSN： 1361-6463

Precise control of epitaxy of graphene by microfabricating SiC substrate Peer-reviewed

H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th Seyller, M. Suemitsu

APPLIED PHYSICS LETTERS　101　(4)　041605-1-041605-4　2012/07

DOI： 10.1063/1.4740271 　

ISSN： 0003-6951

eISSN： 1077-3118

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates Peer-reviewed

Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(6)　06FD02-1-06FD02-4　2012/06

DOI： 10.1143/JJAP.51.06FD02 　

ISSN： 0021-4922

eISSN： 1347-4065

Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment Peer-reviewed

Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(6)　06FD10-1-06FD10-4　2012/06

DOI： 10.1143/JJAP.51.06FD10 　

ISSN： 0021-4922

eISSN： 1347-4065

基板相互作用によるグラフェンの電子状態制御 Peer-reviewed

吹留博一, 川合祐輔, 末光眞希

信学技法　112　(5)　5-7　2012/04/18

Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications Peer-reviewed

Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkouchi, Akitaka Yoshigoe, Yuden Teraoka, Yoshiharu Enta, Toyohiko Kinoshita, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

2012 MRS Spring Meeting　2012/04

Graphene field effect transistor using a novel self-aligned technique for high speed applications

G.-H. Park, M.-H. Jung, S. Zen, H. Fukidome, T. Yoshida, T. Suemitsu, T. Otsuji, M. Suemitsu

59th JSAP Spring Meeting, Tokyo, Japan, Mar. 15-18　15a-A3-45　2012/03/15

Carbonaceous field effect transistor with graphene and diamondlike carbon Peer-reviewed

Takabayashi, Susumu, Ogawa, Shuichi, Takakuwa, Yuji, Kang, Hyun-Chul, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Maki, Suemitsu, Tetsuya, Otsuji, Taiichi

DIAMOND AND RELATED MATERIALS　22　118-123　2012/02

DOI： 10.1016/j.diamond.2011.12.037 　

ISSN： 0925-9635

eISSN： 1879-0062

Bottom gate polycrystalline Si thin film transistors prepared by pulsed-plasma chemical vapor deposition under near atmospheric pressures

Y. Inayoshi, Y. Uezawa, H. Fukidome, S. Nakajima, T. Uehara, Y. Toyoshima, M. Suemitsu

The 5th International Symposium and The 4th Student-Organizing International Mini-Conference on Information Electronics Systems　2012

Control of structure and electronics states of graphene by using substrate interaction Invited Peer-reviewed

Hirokazu Fukidome

Jtounal of the Surface Science Soceity of Japan　33　(10)　546-551　2012

DOI： 10.1380/jsssj.33.546 　

ISSN： 0388-5321

Transmission-electron-microscopy observations on the growth of epitaxial graphene on 3C-SiC(110) and 3C-SiC(100) virtual substrates Peer-reviewed

Hiroyuki Handa, Shun Ito, Hirokazu Fukidome, Maki Suemitsu

HETEROSIC & WASMPE 2011　711　242-+　2012

DOI： 10.4028/www.scientific.net/MSF.711.242 　

ISSN： 0255-5476

eISSN： 1662-9752

Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si Peer-reviewed

Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, Maki Suemitsu

APPLIED PHYSICS EXPRESS　4　(11)　115104-1-115104-3　2011/11

DOI： 10.1143/APEX.4.115104 　

ISSN： 1882-0778

eISSN： 1882-0786

Tunable electronic structure of epitaxial graphene formed on silicon substrates Peer-reviewed

Maki Suemitsu, Hirokazu Fukidome

3rd Symposium on the Science and Technology of Epitaxial Graphene (STEG3)　2011/10/24

Tuning of Electronic Properties of Epitaxial Graphene on Microfabrication Peer-reviewed

H. Fukidome, H. Handa, M. Kotsugi, T.Seyller, Y. Kawai, T. Ohkouchi, K. Horn, R.Takahashi, K. Imaizumi, Y. Enta, M. Suemitsu, T. Kinoshita

第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011)　2011/10/24

Effect of SiH4 Pre-annealing on Graphitization of 3C-SiC/Si Peer-reviewed

H. Fukidome, S. Abe, H. Handa, R.Takahashi, K. Imaizumi, S. Sanbonsuge, M. Suemitsu

第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011)　2011/10/24

Impacts of the Access Resistance on the Channel Conduction Characteristics in Graphene FETs Peer-reviewed

M.-H. Jung, C. Quan, H. Fukidome, T.Suemitsu, T. Otsuji, M. Suemitsu

第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011)　2011/10/24

Graphene/SiC/Si FETs with SiCN Gate Stack Peer-reviewed

T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, T. Otsuji

220th ECS Meeting　1　(1)　2110　2011/10/12

Tuning of Structural and Electronic properties of Epitaxial Graphene by Substrate Microfabrication Peer-reviewed

H. Fukidome, H. Handa, M. Kotsugi, Th. Seyller, Y. Kawai, T. Ohkouchi, K. Horn, R. Takahashi, K. Imaizumi, Y. Enta, M. Suemitsu, T. Kinoshita

2011 International Conference on Solid State Devices and Materials (SSDM2011)　2011/09/28

Graphene channel modulation by dual-gate operation for high-speed device applications

M.-H. Jung, S. Zen, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu

72nd JSAP Fall Meeting, Yamagata, Japan, Aug. 30-Sep. 2　72nd　31a-K-7　2011/08/31

Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process Peer-reviewed

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　70102-1-70102-5　2011/07

DOI： 10.1143/JJAP.50.070102 　

ISSN： 0021-4922

eISSN： 1347-4065

Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate Peer-reviewed

Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Hirokazu Fukidome, Akitaka Yoshigoe, Yuden Teraoka, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　70103-1-70103-6　2011/07

DOI： 10.1143/JJAP.50.070103 　

ISSN： 0021-4922

eISSN： 1347-4065

Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface Peer-reviewed

Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　70105-1-70105-6　2011/07

DOI： 10.1143/JJAP.50.070105 　

ISSN： 0021-4922

eISSN： 1347-4065

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications Peer-reviewed

Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　70107-1-70107-5　2011/07

DOI： 10.1143/JJAP.50.070107 　

ISSN： 0021-4922

eISSN： 1347-4065

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation Peer-reviewed

Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　70111-1-70111-5　2011/07

DOI： 10.1143/JJAP.50.070111 　

ISSN： 0021-4922

eISSN： 1347-4065

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device Peer-reviewed

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(7)　70113-1-70113-4　2011/07

DOI： 10.1143/JJAP.50.070113 　

ISSN： 0021-4922

eISSN： 1347-4065

Growth of epitaxial graphene on 3C-SiC/Si heterostructure Peer-reviewed

Maki Sue, Hirokazu Fukidome

HeteroSiC-WASMPE2011　2011/06/27

Graphene FETs with SiCN gate stack deposited by PECVD using HMDS vapor Peer-reviewed

Tetsuya Suemitsu, Makoto Kubo, Ryo Takahashi, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

35th Workshop on Compound Semiconductor Devices and Integrated Circuits　85-86　2011/05/29

Complimentary logic inverter on epitaxial graphene/6H-SiC field effect transistor with diamond-like carbon film as gate dielectrics at room temperature Peer-reviewed

Amine El Moutaouakil, Susumu Takabayashi, Shuichi Ogawa, Yuji Takakuwa, Hyun-Chul Kang, Ryota Takahashi, Hirokazu Fukidome, Maki Suemitsu, Eiichi Sano, Tetsuya Suemitsu, Taiichi Otsuji

nature Graphene Conference　2011/05/11

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials Peer-reviewed

Hiromi Karasawa, Tsuneyoshi Komori, Takayuki Watanabe, Akira Satou, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Taiichi Otsuji

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES　32　(5)　655-665　2011/05

DOI： 10.1007/s10762-010-9677-1 　

ISSN： 1866-6892

eISSN： 1866-6906

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials Peer-reviewed

Hiromi Karasawa, Tsuneyoshi Komori, Takayuki Watanabe, Akira Satou, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Taiichi Otsuji

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES　32　(5)　655-665　2011/05

DOI： 10.1007/s10762-010-9677-1 　

ISSN： 1866-6892

eISSN： 1866-6906

High-Frequency Coherent Phonons in Graphene on Silicon Peer-reviewed

Sho Koga, Ikufumi Katayama, Shunsuke Abe, Hirokazu Fukidome, Maki Suemitsu, Masahiro Kitajima, Jun Takeda

APPLIED PHYSICS EXPRESS　4　(4)　045101-1-045101-3　2011/04

DOI： 10.1143/APEX.4.045101 　

ISSN： 1882-0778

eISSN： 1882-0786

Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations Peer-reviewed

Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Myung-Ho Jung, Shun Ito, Hirokazu Fukidome, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(4)　2011/04

DOI： 10.1143/JJAP.50.04DH02 　

ISSN： 0021-4922

eISSN： 1347-4065

Novel epitaxy of graphene using substrate microfabrication Peer-reviewed

HIROKAZU FUKIDOME, MASATO KOTSUGI, TAKUO OHKOUCHI, TOYOHIKO KINOSHITA, THOMAS SEYLLER, KARSTEN HORN, YUSUKE KAWAI, MAKI SUEMITSU, YOSHIO WATANABE

in Abstratc of APS March Meeting　J36.00002-J36.00002　2011/03/21

Graphene FET with a diamonolike carbon gate dielectric

S. Takabayashi, S. Ogawa, Y. Takakuwa, H.-C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji

58th JSAP Spring Meeting, Kanagawa, Japan　58th　27a-KQ-6　2011/03

XTEM characterization of epitaxial graphene formed on non-basal SiC surfaces Peer-reviewed

M Suemitsu, H Handa, F Hirokazu

in Proceedings of Graphene Week 2011　2011

Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy Peer-reviewed

Shin-Ichiro Kobayashi, Youn-Geun Kim, Rui Wen, Kohei Yasuda, Hirokazu Fukidome, Tomoyuki Suwa, Rihito Kuroda, Xiang Li, Akinobu Teramoto, Tadahiro Ohmi, Kingo Itaya

ELECTROCHEMICAL AND SOLID STATE LETTERS　14　(9)　H351-H353　2011

DOI： 10.1149/1.3597657 　

ISSN： 1099-0062

eISSN： 1944-8775

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications Peer-reviewed

H. Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H. -C. Kang, H. Karasawa, T. Suemitsu, T. Otsuji, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita, M. Suemitsu

JOURNAL OF MATERIALS CHEMISTRY　21　(43)　17242-17248　2011

DOI： 10.1039/c1jm12921j 　

ISSN： 0959-9428

eISSN： 1364-5501

Graphene/SiC/Si FETs with SiCN Gate Stack Peer-reviewed

T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, T. Otsuji

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53)　41　(6)　249-254　2011

DOI： 10.1149/1.3629973 　

ISSN： 1938-5862

eISSN： 1938-6737

Graphene/SiC/Si FETs with SiCN Gate Stack Peer-reviewed

T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, T. Otsuji

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53)　41　(6)　249-254　2011

DOI： 10.1149/1.3629973 　

ISSN： 1938-5862

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111) Peer-reviewed

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

NANOSCALE RESEARCH LETTERS　5　(12)　1888-1891　2010/12

DOI： 10.1007/s11671-010-9731-x 　

ISSN： 1931-7573

eISSN： 1556-276X

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111) International-journal Peer-reviewed

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

NANOSCALE RESEARCH LETTERS　5　(12)　1888-1891　2010/12

DOI： 10.1007/s11671-010-9731-x 　

ISSN： 1931-7573

Deposition of Graphene using Near-Atmospheric Pressure Pulsed-Plasma CVD Peer-reviewed

K. Nakanishi, M. Matsumoto, Y. Inayoshi, Y. Uezawa, S. Nakajima, T. Uehara, Y. Toyoshima, H. Fukidome, M. Suemitsu

23rd International Microprocesses and Nanotechnology Conference Digest　11D-8-26　2010/11/09

Formation of High-k Dielectric Films on Graphene by Metal Oxidation for Top-Gated Graphene Device Application Peer-reviewed

M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu

23rd International Microprocesses and Nanotechnology Conference Digest　11D-8-131L　2010/11/09

SiCグラフェンのデバイス応用と微細加工 Invited

吹留 博一

MNC2010 技術セミナー「グラフェン」　21-30　2010/11

CONTROL OF STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIAL GRAPHENE BY CRYSTALLOGRAHIC ORIENTATION OF Si SUBSTRATE Peer-reviewed

Hirokazu Fukidome, Ryota Takahashi, Kei Imaizumi, Hiroyuki Handa, Maki Suemitsu, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Yoshio Watanabe

Abstract in 2nd International Symposium on Graphene Devices　14-15　2010/10/27

SURFACE ORIENTATION DEPENDENCE OF THE STRUCTURAL PROPERTIES OF GRAPHENE GROWN ON Si SUBSTRATES Peer-reviewed

Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Myung-Ho Jung, Shun Ito, Hirokazu Fukidome, Maki Suemitsu

Abstract in 2nd International Symposium on Graphene Devices　36-37　2010/10/27

NANOSCALE CONTROL OF STRUCTURE OF EPITAXIAL GRAPHENE BY USING SUBSTRATE MICROFABRICATION Peer-reviewed

Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe

Abstract in 2nd International Symposium on Graphene Devices　68-69　2010/10/27

INVESTIGATION OF GRAPHENE FIELD EFFECT TRANSISTORS WITH Al2O3 GATE DIELECTRICS FORMED BY METAL OXIDATION Peer-reviewed

Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Maki Suemitsu

Abstract in 2nd International Symposium on Graphene Devices　76-77　2010/10/27

LEED OBSERVATION OF THE FORMATION OF EPITAXIAL GRAPHENE ON 3C-SiC(111) ULTRATHIN FILM ON SiC(111) Peer-reviewed

Ryota Takahashi, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

Abstract in 2nd International Symposium on Graphene Devices　56-57　2010/10/27

OXYGEN-INDUCED REDUCTION OF THE GRAPHITIZATION TEMPERATURE OF SiC SURFACE Peer-reviewed

Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu

Abstract in 2nd International Symposium on Graphene Devices　58-59　2010/10/27

GRAPHENE FORMATION ON 3C-SiC(111) THIN FILM GROWN ON Si(110) SUBSTRATE Peer-reviewed

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

Abstract in 2nd International Symposium on Graphene Devices　60-61　2010/10/27

TEMPERATURE-PROGRAMMED-DESORPTION STUDY ON GRAPHENE-ONSILICON PROCESS Peer-reviewed

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

Abstract in 2nd International Symposium on Graphene Devices　62-63　2010/10/27

FORMATION OF GRAPHENE BY PULSED-PLASMA CVD UNDER ATMOSPHERIC PRESSURE Peer-reviewed

Kunihiro Nakanishi, Mitsutaka Matsumoto, Yohei Inayoshi, Yuji Uezawa, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima, Hirokazu Fukidome, Maki Suemitsu

Abstract in 2nd International Symposium on Graphene Devices　66-67　2010/10/27

CHEMICAL BONDS AT INTERFACES BETWEEN GRAPHENE AND GROUP-10 METALS Peer-reviewed

M. Kubo, S. Takabayashi, R. Takahashi, S. Abe, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

Abstract in 2nd International Symposium on Graphene Devices　72-73　2010/10/27

ROOM TEMPERATURE COMPLIMENTARY LOGIC INVERTER ON EPITAXIAL GRAPHENE-ON-SILICON DEVICE Peer-reviewed

A. El Moutaouakil, H-C Kang, H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, T. Otsuji

Abstract in 2nd International Symposium on Graphene Devices　92-93　2010/10/27

DC AND RF CHARACTERISTICS OF GRAPHENE FETS FORMED BY THERMAL DECOMPOSITION OF SiC GROWN ON SILICON SUBSTRATES Peer-reviewed

H.-C. Kang, S. Takabayashi, K. Akagawa, T. Yoshida, S. Abe, R. Takahashi, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

Abstract in 2nd International Symposium on Graphene Devices　26-27　2010/10/27

LEED and XPS observation of formation of epitaxial graphene on Cubic SiC(111)/Si(111)

Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Hirokazu Fukidome, Maki Suemitsu, Yuden Teraoka, Akitaka Yoshigoe

Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems　161-161　2010/10/19

Discharge instability during the film growth on patterned conductive layers using pulsedplasma CVD under near-atmospheric pressures

Yohei Inayoshi, Kunihiro Nakanishi, Hirokazu Fukidome, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima

Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems　89-90　2010/10/19

Logic inverting operations using Epitaxial Graphene-on-Silicon Field Effect Transistors

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Susumu Takabayashi, Akira Satou, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems　2010/10/19

Epitaxial graphene top-gate FETs on silicon substrates Peer-reviewed

Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

SOLID-STATE ELECTRONICS　54　(10)　1071-1075　2010/10

DOI： 10.1016/j.sse.2010.05.030 　

ISSN： 0038-1101

Epitaxial Graphene Field Effect Transistors on SiC substrate with Polymer Gate Dielectric Peer-reviewed

M. H. Jung, H. Handa, R. Takahashi, H. Fukidome, M. Suemits

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials　71st　589-590　2010/09/22

TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100) Peer-reviewed

H. Handa, R. Takahashi, S. Abe, K. Imaizumi, M.H. Jung, S. Ito, H. Fukidome, M. Suemitsu

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials　125-126　2010/09/22

Epitaxial Graphene-On-Silicon Logic Inverter Peer-reviewed

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials　880-881　2010/09/22

Epitaxial graphene on silicon substrates Invited Peer-reviewed

M. Suemitsu, H. Fukidome

Journal of Physics D: Applied Physics　43　(37)　374012　2010/09/22

DOI： 10.1088/0022-3727/43/37/374012 　

ISSN： 0022-3727 1361-6463

eISSN： 1361-6463

Influence of Hydrogen annealing on electrical property of epitaxial graphene

M. Kubo, H.-C. Kang, R. Takahashi, H. Handa, S. Takabayashi, H. Fukidome, T. Suemitsu, T. Otsuji

71st JSAP Fall Meeting, Nagasaki　71st　15p-ZK-8　2010/09/15

Chemical bonding at graphene/Pt interface

S. Takabayashi, R. Takahashi, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

71st JSAP Fall Meeting, Nagasaki　71st　15p-ZK-9　2010/09/15

Epitaxial graphene on silicon substrates Peer-reviewed

M. Suemitsu, H. Fukidome

JOURNAL OF PHYSICS D-APPLIED PHYSICS　43　(37)　374012-1-374012-11　2010/09

DOI： 10.1088/0022-3727/43/37/374012 　

ISSN： 0022-3727

eISSN： 1361-6463

Graphene-on-Silicon Formation by Thermal Conversion of 3C-SiC Thin Films on Si(111), SI(110), Si(100) Substrates Invited Peer-reviewed

Hiroyuki Handa, Yu MIyamoto, Eiji Saito, Hirokazu Fukidome, Maki Suemitsu

HYOMEN KAGAKU　31　(7)　352-358　2010/07/01

DOI： 10.1380/jsssj.31.352 　

ISSN： 0388-5321

Growth of Graphene on Silicon Substraes and Its Control over Interfacee Properties Peer-reviewed

M.Suemitsu, H.Fukidome

2010 Villa Conference on Interaction Among Nanostructures　29-29　2010/06/21

Heteroepitaxial Graphene on a Si Substrate Field-Effect Transistor Peer-reviewed

R. Olac-vaw, H.-C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, V. Mitin, T. Otsuji

APS March Meeting　1　(1)　Y21.00011　2010/03

Graphene-on-Silicon Formation by Thermal Conversion of 3C-SiC Thin Films on Si(111), (110), (100) substrates Peer-reviewed

半田浩之, 宮本優, 齋藤英司, 吹留博一, 末光眞希

Journal of The Surface Science　31　(7)　352-358　2010

DOI： 10.1380/jsssj.31.352 　

ISSN： 0388-5321

Epitaxial Growth Processes of Graphene on Silicon Substrates Invited Peer-reviewed

Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Maki Suemitsu

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(1)　01AH03-1-01AH03-4　2010

DOI： 10.1143/JJAP.49.01AH03 　

ISSN： 0021-4922

Optoelectronic Application of Multi-layer Epitaxial Graphene on a Si Substrate Peer-reviewed

R. Olac-vaw, H. C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, V. Mitin, T. Otsuji

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2　3　224-+　2010

DOI： 10.1109/INEC.2010.5424646 　

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010) Peer-reviewed

Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(7)　04DF17-1-04DF17-5　2010

DOI： 10.1143/JJAP.49.079201 　

ISSN： 0021-4922

eISSN： 1347-4065

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate Peer-reviewed

Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(6)　06GG01-1-06GG01-5　2010

DOI： 10.1143/JJAP.49.06GG01 　

ISSN： 0021-4922

eISSN： 1347-4065

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates Peer-reviewed

Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

JAPANESE JOURNAL OF APPLIED PHYSICS　49　(4)　079201-079201　2010

DOI： 10.1143/JJAP.49.04DF17 　

ISSN： 0021-4922

Epitaxial Formation of Graphene on Si Substrates: from Heteroepitaxy of 3C-SiC to Si Sublimation Invited Peer-reviewed

M. Suemitsu, H. Handa, E. Saito, H. Fukidome

SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES　33　(6)　859-867　2010

DOI： 10.1149/1.3487616 　

ISSN： 1938-5862

Ambipolar behavior in epitaxial graphene based FETs on Si substrate Peer-reviewed

Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

MNC2009: 22nd International Microprocesses and Nanotechnology Conf. Dig. Papers　1　(1)　440-441　2009/11/19

Heteroepitaxial graphene on silicon: Process&device technology for ultra-high frequency devices Peer-reviewed

T. Otsuji, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, E. Sano

22nd Int'l Microprocesses and Nanotechnology Conf.　17B-3-2　2009/11

Extraction of drain current and effective mobility in epitaxial graphene channel FETs on silicon substrate Peer-reviewed

H.-C. Kang, R. Olac-vaw, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

Int. Conf. on Solid State Devices and Materials (SSDM), Sendai, Japan　954-955　2009/10

Epitaxial graphene field-effect transistors on silicon substrates

H.-C. Kang, H. Karasawa, Y. Miyamoto, H. Handa, T. Suemitsu, H. Fukidome, M. Suemitsu, T. Otsuji

70th JSAP Fall Meeting, Toyama　70th　(3)　1299　2009/09/08

High-resolution molecular images of rubrene single crystals obtained by frequency modulation atomic force microscopy Peer-reviewed

Taketoshi Minato, Hiroto Aoki, Hirokazu Fukidome, Thorsten Wagner, Kingo Itaya

APPLIED PHYSICS LETTERS　95　(9)　093302-1　2009/08

DOI： 10.1063/1.3184770 　

ISSN： 0003-6951

Epitaxial graphene on Si substrate for infrared photodetection Peer-reviewed

R. Olac‐vaw, H.C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

Int. Conf. on Graphene Tokyo　1　(1)　52　2009/07

Epitaxial groqth of graphene on silicon surfaces Invited

H. Fukidome, Y. Miyamoto, H. Handa, T. Ito, M. Suemitsu

E-MRS prcoeedings　2009/06

Field effect Transistor of organic single crystal using solic/liquid interface

H. Fukidome

Changwon National University(Korea) - Tohoku University(Japan) Joint Symposium　2009/02

Raman-scattering spectroscopy of epitaxial graphene formed on SiC film on Si substrate Peer-reviewed

Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Atsushi Konno, Yuzuru Narita, Maki Suemitsu, Hirokazu Fukidome, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh

e-Journal of Surface Science and Nanotechnology　7　107-109　2009/01/10

DOI： 10.1380/ejssnt.2009.107 　

ISSN： 1348-0391

eISSN： 1348-0391

Erratum: Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate [e-J. Surf. Sci. Nanotech. Vol. 7, pp. 107-109 (2009)]

Miyamoto Yu, Handa Hiroyuki, Saito Eiji, Konno Atsushi, Narita Yuzuru, Suemitsu Maki, Fukidome Hirokazu, Ito Takashi, Yasui Kanji, Nakazawa Hideki, Endoh Tetsuo

e-J. Surf. Sci. Nanotech.　7　699-699　2009

DOI： 10.1380/ejssnt.2009.699 　

ISSN： 1348-0391

Graphene-on-silicon (GOS) technology for formation of high-mobility

「H. Handa」, 「Y. Miyamoto」, 「H. Fukidome」, M. Suemitsu」

IEICE Tech. Rep. ED　2009　10　2009

Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure Invited Peer-reviewed

M. Matsumoto, S. Ito, Y. Inayoshi, S. Murashige, H. Fukidome, M. Suemitsu, S. Nakajima, T. Uehara, Y. Toyoshima

CLEANING AND SURFACE CONDITIONING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING 11　25　(5)　345-350　2009

DOI： 10.1149/1.3202672 　

ISSN： 1938-5862

Epitaxial graphene top-gate FETs on silicon substrates Invited Peer-reviewed

Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

2009 International Semiconductor Device Research Symposium, ISDRS '09　2009　(10)　1071-1075　2009

DOI： 10.1109/ISDRS.2009.5378157 　

ISSN： 0038-1101

Interaction of Cesium with Microscopically Charged SiO2 by Ion Implantation Studied by Photoemission Electron Microscopy Peer-reviewed

Fukidome, M. Yoshimura, K. Ueda

Surface Science　601　(22)　5309-5312　2007/11/15

DOI： 10.1016/j.susc.2007.04.226 　

ISSN： 0039-6028

Interaction of cesium with charged oxide under UV irradiation imaged by photoemission electron microscopy Peer-reviewed

Hirokazu Fukidome, Masamichi Yoshimura, Kazuyuki Ueda

SURFACE SCIENCE　601　(22)　5309-5312　2007/11

DOI： 10.1016/j.susc.2007.04.226 　

ISSN： 0039-6028

Microscopically controlled oxidation of H/Si(100) by lateral surface electric field studied by emission electron microscopies Peer-reviewed

Hirokazu Fukidome, Kei Tanaka, Masamichi Yoshimura, Kazuyuki Ueda, Fang-Zhun Guo, Toyohiko Kinoshita, Keisuke Kobayashi

SURFACE SCIENCE　601　(20)　4675-4679　2007/10

DOI： 10.1016/j.susc.2007.05.026 　

ISSN： 0039-6028

Microscopic changes of thin films of directly thiolated fullerenes depending on substrate and number of thiol Invited Peer-reviewed

Hirokazu Fukidome, Masaru Sekido, Masamichi Yoshimura, Masanori Tanaka, Masatomi Ohno, Kazuyuki Ueda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　46　(8B)　5560-5562　2007/08

DOI： 10.1143/JJAP.46.5560 　

ISSN： 0021-4922

Microscopically Controlled Oxidation of Silicon Imaged by Emission Electron Microscopies Peer-reviewed

Hirokazu Fukidome, M. Yoshimura, K. Ueda, F.-Z.Guo, T. Kinoshita, K. Kobayashi

Proceedings of LEEM/PEEM V　1　(1)　172-172　2006/11

Microscopic Control of Surface Electric Field and Reaction on Si(100) Peer-reviewed

H. Fukidome, M. Yoshimura, K. Ueda, F.-Z. Guo, T. Kinoshita, K. Kobayashi

Proceedings of 16th International Microscopy Congress　1　(2)　1058　2006/10

Variation of contrast of H/pn-Si(100) imaged with different emission electron microscopies Invited Peer-reviewed

Hirokazu Fukidome, Masamichi Yoshimura, Kazuyuki Ueda, Fang Zhun Guo, Toyohiko Kinoshita, Keisuke Kobayashi

e-Journal of Surface Science and Nanotechnology　4　539-543　2006/06/14

DOI： 10.1380/ejssnt.2006.539 　

ISSN： 1348-0391

Evaporation and thermionic emission processes of Pb/W(110) imaged in situ by emission electron microscopy Peer-reviewed

H Fukidome, M Yoshimura, K Ueda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　45　(1A)　70-72　2006/01

DOI： 10.1143/JJAP.45.70 　

ISSN： 0021-4922

Evaporation and Thermionic Emission Processes of Pb/W(110) Imaged in situ by Emission Electron Microscopies Peer-reviewed

H. Fukidome, M. Yoshimura, K. Ueda

Jpn. J. App. Phys.　44　L1417-L1419　2006/01

Temperature Dependence of Contrast in PEEM images of Si(100) with Lateral p-n Junctions Peer-reviewed

H. Fukidome, M. Yoshimura, K. Ueda

Proceedings of ISSS-4　2005/10

Temperature-dependent contrasts of lateral p(+)-n junctions on H/Si(100) imaged with photoemission electron microscopy Peer-reviewed

H Fukidome, M Yoshimura, K Ueda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　44　(46-49)　L1417-L1419　2005

DOI： 10.1143/JJAP.44.L1417 　

ISSN： 0021-4922

Characteristic Configuration of Cis-2-butene Molecule on Pd(110) Determined by Scanning Thnneling Microscopy Peer-reviewed

SAINOO,Yasuyuki, KIM,Yousoo, FUKIDOME,Hirokazu, KOMEDA,Tadahiro, KAWAI,Maki, SHIGEKAWA,Hidemi

Japanese journal of applied physics. Pt. 1, Regular papers & short notes　41　(7)　4976-4979　2002/07

ISSN： 0021-4922

Characteristic configuration of cis-2-butene molecule on Pd(110) determined by scanning tunneling microscopy Peer-reviewed

Y Sainoo, Y Kim, H Fukidome, T Komeda, M Kawai, H Shigekawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　41　(7B)　4976-4979　2002/07

DOI： 10.1143/JJAP.41.4976 　

ISSN： 0021-4922

Scanning Tunneling Microscopy study of water molecules on Pd(110) at cryogenic temperature Peer-reviewed

T Komeda, H Fukidome, Y Kim, M Kawai, Y Sainoo, H Shigekawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　41　(7B)　4932-4935　2002/07

DOI： 10.1143/JJAP.41.4932 　

ISSN： 0021-4922

In situ vibrational study of SiO2/liquid interfaces Peer-reviewed

H. Fukidome, O. Pluchery, K. T. Queeney, Y. Caudano, K. Raghavachari, M. K. Weldon, E. E. Chaban, S. B. Christman, H. Kobayashi, Y. J. Chabal

Surface Science　502-503　498-502　2002/04/10

DOI： 10.1016/S0039-6028(01)01998-7 　

ISSN： 0039-6028

Inelastic Tunneling Spectroscopy Water and Hydrocarbon Molecules on Metal Surfaces Peer-reviewed

H. Fukidome, Y. Kim, T. Komeda, M. Kawai

Proceedings of ICSPM9　2001/12

Tunneling Current-Induced Motion of a Single Molecule on Pd(110) Peer-reviewed

Y. Sainoo, Y. Kim, H. Fukidome, T. Komeda, M. Kawai, H. Shigekawa

Proceedings of ICSPM9　2001/12

In Situ Electrochemical Study on Si-O Vibrations on Si(100) Surface Peer-reviewed

H. Fukidome, H. Kobayashi, Y.J. Chabal

Proceedings of 10th Int. Conference on Vibrations at Surfaces　2001/09

In-situ FTIR studies of reactions at the silicon/liquid interface: Wet chemical etching of ultrathin SiO2 on Si(100) Peer-reviewed

KT Queeney, H Fukidome, EE Chaban, YJ Chabal

JOURNAL OF PHYSICAL CHEMISTRY B　105　(18)　3903-3907　2001/05

DOI： 10.1021/jp003409j 　

ISSN： 1089-5647

Effect of dissolved oxygen on etching process of Si(111) in 2.5% NH3 solution Peer-reviewed

H Fukidome, M Matsumura

SURFACE SCIENCE　463　(3)　L649-L653　2000/09

ISSN： 0039-6028

Very simple method of flattening Si(111) surface at an atomic level using oxygen-free water Peer-reviewed

H. Fukidome, M. Matsumura

Jpn. J. Appl. Phys.　38　(10)　L1085-L1086　1999/09

DOI： 10.1143/jjap.38.L1085 　

ISSN： 0021-4922

In situ atomic force microscopy observation of dissolution process of Si(111) in oxygen-free water at room temperature Peer-reviewed

H Fukidome, M Matsumura, T Komeda, K Namba, Y Nishioka

ELECTROCHEMICAL AND SOLID STATE LETTERS　2　(8)　393-394　1999/08

DOI： 10.1149/1.1390848 　

ISSN： 1099-0062

Flattening of Si(111) in Oxygen-free Water and Alkaline solutions Peer-reviewed

H. Fukidome, M. Matsumura

Proc. 9th International Conference on Production Engineering　1　(1)　491-494　1999/08

Interfacial structure of Si/SiO2 studied by andic currents in HF solution Peer-reviewed

N Mizuta, H Fukidome, M Matsumura

ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND SEMICONDUCTOR/METAL DEPOSITION II, PROCEEDINGS　99　(9)　366-372　1999

Effect of dissolved oxygen on surface morphology of Si(111) immersed in NH4F and NH4OH solutions Invited Peer-reviewed

H Fukidome, M Matsumura

ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND SEMICONDUCTOR/METAL DEPOSITION II, PROCEEDINGS　99　(9)　373-378　1999

Electrochemical study of atomically flattening process of silicon in 40% NH(4)F solution Peer-reviewed

H Fukidome, M Matsumura

APPLIED SURFACE SCIENCE　130　146-150　1998/06

DOI： 10.1016/S0169-4332(98)00041-5 　

ISSN： 0169-4332

Electrochemical Study of Atomic-Flattening Process of Silicon Surface in 40% NH4F Solution

H. Fukidome, M. Matsumura

Proceedings of the 4th In.l Symp. on Atomically Controlled Surfaces and Interfaces　1　(1)　74-74　1997/10

Analysis of silicon surface in connection with its unique electrochemical and etching behavior Peer-reviewed

Hirokazu Fukidome, Teruhisa Ohno, Michio Matsumura

Journal of the Electrochemical Society　144　(2)　679-682　1997

DOI： 10.1149/1.1837467 　

ISSN： 0013-4651

Enhanced etching rate of silicon in fluoride containing solutions at pH 6.4 Peer-reviewed

Michio Matsumura, Hirokazu Fukidome

Journal of the Electrochemical Society　143　(8)　2683-2686　1996

DOI： 10.1149/1.1837071 　

ISSN： 0013-4651