Details of the Researcher

PHOTO

Chioko Kaneta
Section
Center for Innovative Integrated Electronic Systems
Job title
Professor
Degree

  • Doctor of Science (Tohoku University)

Research History 9

  • 2020/05 - Present
    Tohoku University　Center for Innovative Integrated Electronic Systems

  • 2014/10 - 2020/04
    Osaka University　Institute for Nanoscience Design

  • 1985/06 - 2020/04
    Fujitsu Laboratories Ltd.

  • 2017/06 - 2020/03
    革新知能統合研究センター 理研AIP-富士通連携センター　客員研究員

  • 2009/04 - 2014/03
    Osaka University　Institute for Nanoscience Design

  • 2012/04 - 2013/03
    大阪大学基礎工学部　非常勤講師

  • 2004/10 - 2009/03
    Osaka University

  • 1998/07 - 1998/08
    University College London 短期派遣

  • 1997/06 - 1997/09
    University College London 短期派遣

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Education 3

  • Tohoku University

    - 1985/03

  • 東北大学　大学院 理学研究科　物理学専攻 博士課程前期2年の課程

    - 1982/03

  • Tohoku University　Faculty of Science　Department of Physics

    1980/03 -

Committee Memberships 58

  • 2025 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY -　Organizing Committee Chair

    2024/04 - Present

  • 科学技術振興機構　戦略的創造研究推進事業 ERATO 運営・評価委員会分科会委員

    2020/11 - Present

  • 応用物理学会 「電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―」　運営委員

    2016/04 - Present

  • 日本学術会議　連携会員

    2011/10 - Present

  • 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023)　Technical Program Committee Member

    2022/12 - 2023/11

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY　組織委員

    2022/06 - 2023/11

  • 計算物質科学人材育成コンソーシアム　運営協議会委員

    2015/09 - 2022

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY　組織委員

    2020/10 - 2021/11

  • NEDO　技術委員

    2019/12 - 2021/03

  • 2020 Eupean Material Research Society (E-MRS 2018) Spring Meeting, Symposium W　Organizing Committee Member

    2019/05 - 2020/12

  • 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2020)　Technical Program Committee Member

    2019/12 - 2020/11

  • 応用物理学会　アドバイザリー会議委員

    2018/04 - 2020/03

  • 大阪大学 インタラクティブ物質科学・カデットプログラム　アドバイザリー委員

    2013/10 - 2020/03

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY　組織委員

    2018/11 - 2019/12

  • 30th International Conference on Defects in Semiconductors　International Program Committee member

    2018/06 - 2019/12

  • 2019 Gettering and Defect Engineering in Semiconductor Technology　International Program Committee Member

    2018/11 - 2019/09

  • 日本学術振興会「マテリアル・インフォマティックスによるものづくりプラットフォームの戦略的構築」に関する先導的研究開発委員会　委員

    2016/04 - 2019/03

  • 2018 European Material Research Society (E-MRS 2018) Spring Meeting Symposium I　Organizing Committee Member

    2017/05 - 2018/12

  • 2018 第8回 シリコン材料の科学と技術フォーラム　外部アドバイザー

    2018/10 - 2018/11

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY　組織委員

    2017/01 - 2017/12

  • 29th International Conference on Defects in Semiconductors (ICDS2017)　International Program Committee member

    2016/07 - 2017/12

  • 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2017)　Technical Program Committee Member

    2017/01 - 2017/11

  • 科学技術振興機構　追跡評価委員

    2015/10 - 2016/03

  • 次世代スーパーコンピュータ戦略プログラム第2分野「新物質・エネルギー創成」戦略機関 産官学連携小委員会　委員

    2010/01 - 2016/03

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY　組織委員

    2015/03 - 2015/11

  • 独立行政法人 産業技術総合研究所 研究ユニット評価委員会（ナノシステム研究部門）　委員

    2014/07 - 2015/08

  • 応用物理学会　諮問委員

    2013/04 - 2015/03

  • 応用物理学会 業績賞委員会　委員

    2013/04 - 2015/03

  • 応用物理学会 「ゲートスタック研究会 ―材料・プロセス・評価の物理―」　運営委員

    2012/04 - 2015/03

  • 日本学術振興会 研究開発専門委員会「産業応用をめざした新物質機能の設計と実証」　委員

    2011/10 - 2014/09

  • 日本学術振興会 戦略的創造研究推進事業 総括実施型研究(ERATO型)　パネルメンバー

    2013/09 - 2014/08

  • International Electron Devices Meeting　Modeling & Simulation subcommittee member

    2012/04 - 2014/03

  • 応用物理学会　第51,52期代議員

    2012/01 - 2014/01

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY　副組織委員長

    2012/10 - 2013/03

  • 応用物理学会　理事

    2011/04 - 2013/03

  • Conference on Computational Phyiscs(CCP)　Advisory Board in Japan

    2011/10 - 2012/12

  • 応用物理学会 「ゲートスタック研究会 ―材料・プロセス・評価の物理―」　運営委員長

    2010/04 - 2012/03

  • 応用物理学会　表彰委員会委員

    2010/04 - 2012/03

  • 応用物理学会 シリコンテクノロジー分科会　委員

    2000/04 - 2012/03

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY　組織委員

    2010/04 - 2011/03

  • 応用物理学会 シリコンテクノロジー分科会　副幹事長

    2009/04 - 2011/03

  • 科学技術振興機構 戦略的創造研究推進事業 公募型研究に係る研究領域の事後評価委員会　専門委員

    2010/01 - 2010/05

  • 応用物理学会 「ゲートスタック研究会 ―材料・プロセス・評価の物理―」　運営委員

    2009/04 - 2010/03

  • スーパーコンピューティング技術産業応用協議会 先端ソフトウェア評価普及部会　委員

    2008/04 - 2010/03

  • Japanese Journal of Applied Physics　編集委員

    2003/04 - 2010/03

  • 応用物理学会 「ゲートスタック研究会 ―材料・プロセス・評価の物理―」　実行委員長

    2008/04 - 2009/03

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES　実行委員

    2007/06 - 2009/01

  • 応用物理学会 「ゲートスタック研究会 ―材料・プロセス・評価の物理―」　プログラム委員長

    2007/03 - 2008/03

  • 応用物理学会　人材育成・男女共同参画委員会 委員

    2004/04 - 2008/03

  • 科学技術・学術審議会（学術分科会科学研究費補助金審査部会量子デザイン専門委員会）　専門委員

    2006/02 - 2008/01

  • 応用物理学会 「ゲートスタック研究会 ―材料・プロセス・評価の物理―　プログラム委員

    2004 - 2007/03

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES　program committee

    2005/07 - 2006/11

  • 半導体理工学研究センター　客員研究員主査

    2002/04 - 2005/03

  • 応用物理学会　半導体A 世話人

    2001/01 - 2005/03

  • International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES　program committee

    2003/04 - 2004/07

  • 「応用物理」　編集委員

    2002/04 - 2004/03

  • 応用物理学会 極薄シリコン酸化膜の形成・評価・信頼性に関する薄膜・表面物理分科会特別研究会」　プログラム委員

    1997/01 - 2004

  • 新エネルギー産業技術総合開発機構(NEDO)「計算機による材料設計調査委員会」　委員

    1991/04 - 1992/03

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Professional Memberships 3

  • IEEE

    2013 - Present

  • 応用物理学会

    1986 - Present

  • 日本物理学会

    1981 - Present

Research Interests 1

  • ナノシミュレーション、材料、薄膜・界面

Research Areas 1

  • Nanotechnology/Materials / Thin-film surfaces and interfaces /

Awards 2

  1. 編集貢献賞

    2011/04　APEX/JJAP

  2. フェロー

    2007/08　応用物理学会

Papers 75

  1. Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation Peer-reviewed

    Hiroshi Naganuma, Hiroaki Honjo, Chioko Kaneta, Koichi Nishioka, Shoji Ikeda, Tetsuo Endoh

    AIP Advances　12　(12)　125317-125317　2022/12

    Publisher: AIP Publishing

    DOI： 10.1063/5.0112741 　

    eISSN： 2158-3226

    More details Close

    The influence of the sidewall damage on the thermal stability factor (Δ) of quad-interface magnetic tunnel junctions (quad-MTJs) was investigated through a string method-based micromagnetic simulation. The quad-MTJs consist of a reference layer/MgO-barrier/CoFeB/middle-MgO/CoFeB/MgO-cap, which has four CoFeB/MgO interfaces to enhance the interfacial perpendicular magnetic anisotropy for large Δ. Experimentally obtained magnetic parameters at room temperature [e.g., saturation magnetization ( Ms), stiffness constant ( As), interfacial perpendicular magnetic anisotropy constants ( Ki), and exchange coupling ( Jex)] in blanket multilayer films of the quad-MTJs were used in micromagnetic simulation. The influence of the sidewall damage on the quad-MTJs, which is difficult to be analyzed in the experimental way, was investigated. The quad-MTJs without damaged layers having relatively higher Ki show the split of the energy barrier into two, resulting in a decrease in Δ. When the decrease in magnetic anisotropy energy ( Eani) is more than the increase in the static magnetic energy ( Esta), the antiferromagnetically (AF) coupled state of two free layers is formed at the midpoint to minimize the total energy ( Eall). This causes the split of the energy barrier. The sidewall damage plays a role in lowering Ki in each layer, consequently avoiding the formation of the AF state. Note that the value of Δ with the sidewall damage, which shows the unified energy barrier, is comparable to non-damaged Δ, which shows the split of the energy barrier; these quad-MTJs have the same volume of free layers.

  2. Materials informatics approach for design of Si/Ge layered nanostructures with low thermal conductivity Peer-reviewed

    Norihiko Takahashi, Yu Liu, Chioko Kaneta

    Japanese Journal of Applied Physics　59　(5)　051005-051005　2020/05/01

    Publisher: IOP Publishing

    DOI： 10.35848/1347-4065/ab8700 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  3. Optimization of a Heterogeneous ternary Li3PO4-Li3BO3-Li2SO4 Mixture for Li-ion Conductivity by Machine Learning Peer-reviewed

    Kenji Homma, Yu Liu, Masato Sumita, Ryo Tamura, Naoki Fushimi, Junichi Iwata, Koji Tsuda, Chioko Kaneta

    J. Phys. Chem. C　124　12865-12870　2020

  4. Li-Ion Conductive Li3PO4-Li3BO3-Li2SO4 Mixture: Prevision through Density Functional Molecular Dynamics and Machine Learning Peer-reviewed

    Masato Sumita, Ryo Tamura, Kenji Homma, Chioko Kaneta, Koji Tsuda

    Bulletin of the Chemical Society of Japan　92　(6)　1100-1106　2019/06/15

    Publisher: The Chemical Society of Japan

    DOI： 10.1246/bcsj.20190041 　

    ISSN： 0009-2673

    eISSN： 1348-0634

  5. Atomistic mechanism of graphene growth on a SiC substrate: Large-scale molecular dynamics simulations based on a new charge-transfer bond-order type potential Peer-reviewed

    So Takamoto, Takahiro Yamasaki, Jun Nara, Takahisa Ohno, Chioko Kaneta, Asuka Hatano, Satoshi Izumi

    Phys. Rev. B　97　(12)　125411　2018

    DOI： 10.1103/PhysRevB.97.125411 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  6. Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (0001) Si-face and (0001) C-face by using a new Si-O-C interatomic potential Peer-reviewed

    So Takamoto, Takahiro Yamasaki, Takahisa Ohno, Chioko Kaneta, Asuka Hatano, Satoshi Izumi

    J. Appl. Phys.　123　(18)　185303　2018

    DOI： 10.1063/1.5028273 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  7. Size and temperature dependence of the energy gaps in Si, SiC and C quantum dots based on tight-binding molecular dynamics simulations Peer-reviewed

    Kentaro Takai, Minoru Ikeda, Takahiro Yamasaki, Chioko Kaneta

    J. Phys. Commun　1　045010　2017

  8. Thermal oxidation simulation of silicon by chargetransfer type molecular dynamics

    So Takamoto, Tomohisa Kumagai, Takahiro Yamasaki, Takahisa Ohno, Chioko kaneta, Asuka Hatano, Izumi Satoshi

    Asia-Pacific Conference on Fracture and Strength 2016, (APCFS2016) JSME-MMD　19-21　2016

  9. Charge-transfer interatomic potential for investigation of the thermal-oxidation growth process of silicon Peer-reviewed

    So Takamoto, Tomohisa Kumagai, Takahiro Yamasaki, Takahisa Ohno, Chioko Kaneta, Asuka Hatano, Satoshi Izumi

    J. Appl. Phys.　120　165109　2016

  10. Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO2 interfaces and their incorporation into SiO2 Peer-reviewed

    Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

    J. Appl. Phys.　115　224303　2014

  11. Molecular dynamics simulations on the oxidation of Si(100)/SiO2 interface: emissions and incorporations of Si-related species into the SiO2 and substrate Invited Peer-reviewed

    Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

    Phys. Status Solidi B　251　2169-2178　2014

  12. Nanoparticulated Dense and Stress-Free Ceramic Thick Film for Material Integration

    Yoshihiko Imanaka, Hideyuki Amada, Fumiaki Kumasaka, Norihiko Takahashi, Takahiro Yamasaki, Mari Ohfuchi, Chioko Kaneta

    Advanced Engineering Materials　15　(11)　1129-1135　2013/11

    Publisher: Wiley

    DOI： 10.1002/adem.201300174 　

    ISSN： 1438-1656

  13. Oxidation of Si/SiO2 Interfaces: Molecular Dynamics Simulations with Variable Charge Interatomic Potentials

    Chioko Kaneta

    International Workshop of Computational Nano-Materials Design on Green Energy　2013

  14. 計算化学統合プラットフォーム SCIGRESSの適用事例

    金田千穂子, 松浦東, 山崎隆浩, 池田稔, 高橋憲彦, 佐藤博之, 高橋篤也, 伊里治展, 益田裕寿, 松本大輔

    工業材料特集 (特集「材料設計ソリューションの開発・利用の現状と課題」)　60　(4)　31-35　2012

  15. Nano-simulations for development of electronic devices

    Chioko Kaneta

    International Workshop of Nano-Spintronics　2012

  16. Selective graphene formation on copper twin crystals Peer-reviewed

    Kenjiro Hayashi, Shintaro Sato, Minoru Ikeda, Chioko Kaneta, Naoki Yokoyama

    Journal of the American Chemical Society　132　12492-12498　2012

  17. Theoretical study on electron transport properties of graphene sheets with 2-Dimensional and 1-Dimensional periodic nanoholes Peer-reviewed

    Hideyuki Jippo, Mari Ohfuchi, Chioko Kaneta

    Physical Review B　84　075467-1-075467-8　2011

  18. Large-scale electronic transport calculations of finite-length carbon nanotubes bridged between graphene electrodes with lithium-intercalated contact Peer-reviewed

    Mari Ohfuchi, Taisuke Ozaki, Chioko Kaneta

    Applied Physics Express　4　.095101-1-.095101-3　2011

  19. SiO Emission and Incorporation in Silicon Oxidation Process Using Molecular Dynamics Method

    Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

    Proceedings of The 217th Electrochemical Society Meeting, ECS Transactions　28(1)　361-368　2010

  20. First-principles Analysis of Carbon diffusion in Ferromagnetic bcc-Fe Peer-reviewed

    Minoru Ikeda, Takahiro Yamasaki, Chioko Kaneta

    The 2nd International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC2) Letters　2　158-159　2010

  21. Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement Peer-reviewed

    T. Sakoda, K. Nishigaya, T. Kubo, M. Hori, H. Minakata, Y. Kobayashi, H. Mori, K. Ono, K. Tanahashi, N. Tamura, T. Mori, Y. Tosaka, H. Matsuyama, C. Kaneta, M. Kase, Y. Nara

    The proceedings of 2010 IEEE International Reliability Physics Symposium　379-384　2010

  22. Development of Problem Solving Environment for Large Scale Electronic Structure Calculations based on Tight Binding Method

    Kentaro Takai, Chioko Kaneta, Yuji Uehara, Yoshimasa Kadooka

    Journal of Convergence Information Technology　5　(4)　195-203　2010

  23. First-principles analysis of C2H2 molecule diffusion and its dissociation process on ferromagnetic bcc-Fe (110) surface Peer-reviewed

    Minoru Ikeda, Takahiro Yamasaki, Chioko Kaneta

    Journal of Physics: Condensed Matter　22　384214-1-384214-6　2010

  24. Molecular Dynamics Study of Oxidation Process with SiO emission and incorporation into the Si/SiO2 System

    Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

    Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials　46-47　2009

  25. 可変電化ポテンシャル法を用いた分子動力学計算～Materials Explorer 5.0～

    高橋 憲彦, 増田 裕寿, 山崎 隆浩, 金田 千穂子

    (分子科学会) Mol. Sci. 2, NP010, (2 pages)　2008

  26. Oxygen vacancies in Amorphous HfO2 and SiO2 Invited Peer-reviewed

    C. Kaneta, Y. Yamasaki

    Mater. Res. Soc. Symp. Proc.　1073E　2008

  27. ナノデバイスに向けたシリコン／絶縁体界面の解明と設計のための試み

    金田千穂子, 山崎隆浩, 高橋憲彦

    Materials Integration　(8)　37-43　2007

  28. Molecular Dynamics Study of Oxidation Process with SiO emission in the Si/SiO2 Interface Peer-reviewed

    Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

    5th Int. Symposium on Control of Semiconductor Interfaces　133-134　2007

  29. Oxygen-related defects in amorphous HfO2 gate dielectrics Peer-reviewed

    C. Kaneta, T. Yamasaki

    Microelectronic Engineering　84　(9-10)　2370-2373　2007

  30. The effect of nitrogen on thermal diffusion in HfO2-based gate dielectrics

    Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

    Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials　1102-1103　2006

  31. Ab initio Study of Boron Pile-up at the Si(001)/ SiO2 Interface Peer-reviewed

    Jinyu Zhang, Yoshio Ashizawa, Hideki Oka, Chioko Kaneta, Takahiro Yamasaki

    Proceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices　143-146　2006

  32. 汎用MDソフトの開発と適用事例（半導体ゲート絶縁膜開発におけるMDの利用）

    小坂 裕子, 増田 裕寿, 山崎 隆浩, 金田 千穂子

    The Bulletin of the Nano Science and Technology　3　(1)　23-28　2005

  33. Defect Generation in HfO2

    C. Kaneta, T. Yamasaki

    Abstracts of Computational Nanoscience ― Grid Application Research in Nanoscience ―, 1st NAREGI International Nanoscience Conference　83　2005

  34. Atomic diffusion between Hf-silicate and interfacial SiO2 layers

    Y. Kosaka, T. Yamasaki, C. Kaneta

    Abstracts of the 35th IEEE Semiconductor Interface Specialists Conference　#4.2　2004

  35. Investigation of Degradation model for Ultra-thin Gate Dielectrics

    Hiroko Mori, Hideo Ehara, Naoyoshi Tamura, Chioko Kaneta, Hideya Matsuyama, Ken Shono

    Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials　710-711　2004

  36. Molecular dynamic simulation on the crystallization of HfO2, Hf-aluminate, and Hf-silicate

    Y. Kosaka, T. Yamasaki, C. Kaneta

    Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials　822-823　2003

  37. Stabilities and electronic states of incorporated Nitrogen atoms at the Interface of SiO2/Si(001) Invited Peer-reviewed

    T. Yamasaki, C. Kaneta

    Proceedings of the 203rd Electrochemical Society meeting Silicon Nitride and Silicon Dioxide Thin Insulating Films (7th)”　308-314　2003

  38. Molecular dynamic simulation on the crystallization of high-k gate dielectric materials

    C. Kaneta, Y. Kosaka, T. Yamasaki

    Proceedings of 2nd International Conference on Semiconductor Technology, (The Electrochemical Society Inc. Proceedings Volume 2002-17), p.262-271, (2002).　2002

  39. Mechanisms of Nitrogen Segregation at the Interface of SiO2/Si(001) and of Hole Trapping Site Generation

    T. Yamasaki, C. Kaneta

    Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials　750-751　2002

  40. Geometric and electronic Structures of SiO2/Si(100) interfaces Peer-reviewed

    T. Yamasaki, C. Kaneta, T. Uchiyama, T. Uda, K. Terakura

    Physical Review B　63　115314-1-115314-5　2001

  41. Defect states due to silicon dangling bonds at the Si(100)/SiO2 interface and the passivation by hydrogen atoms Peer-reviewed

    C. Kaneta, T. Yamasaki, T. Uchiyama, T. Uda, K. Terakura

    Mat. Res. Soc. Symp. Proc.　592　39-44　2000

  42. Reaction of atomic hydrogen with the Si(100)/SiO2 interface defects

    C. Kaneta, T. Yamasaki, T. Uda

    Proceedings of the 25th International Conference on the Physics of Semiconductors　1　419-420　2000

  43. Structure of a SiN layer on Si(111) surface Peer-reviewed

    T. Yamasaki, C. Kaneta, T. Uda

    Proceedings of the 25th International Conference on the Physics of Semiconductors　1　335-336　2000

  44. Electronic Structures of SiO2/Si(001) Interfaces Peer-reviewed

    T. Yamasaki, C. Kaneta, T. Uchiyama, T. Uda, K. Terakura

    The Physics and chemistry of SiO2 and the Si-SiO2 Interface-4　295-305　2000

  45. Si/SiO2 界面の構造と電子状態

    金田千穂子, 山崎隆浩, 内山登志弘, 宇田毅, 寺倉清之

    表面科学　20　(4)　732-736　1999

  46. Interface States Due to Intrinsic Defects in Si(100)/SiO2

    C. Kaneta, T. Yamasaki, T. Uchiyama, T. Uda, K. Terakura

    Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials (The Japan Society of Applied Physics)　322-323　1999

  47. Structure and electronic property of Si(100)/SiO2 interface Peer-reviewed

    C. Kaneta, T. Yamasaki, T. Uchiyama, T. Uda, K. Terakura

    Microelectronic Engineering　48　117-120　1999

  48. Structure and Electronic Statets of Si/SiO2 interface

    Takahiro Yamasaki, Chioko kaneta, Toshihiro Uchiyama, Tsuyoshi Uda, Kiyoyuki Terakura

    '98 JRCAT International Symposium on Atom Technology　1998

  49. Interfacial Structures of SiO2/Si

    T. Yamasaki, C. Kaneta, T. Uchiyama, T. Uda, K. Terakura

    Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, Hiroshima, (The Japan Society of Applied Physics)　118-119　1998

  50. 酸化膜中欠陥の物理 Peer-reviewed

    金田千穂子

    応用物理学会誌　(11)　1139-1143　1996/11

  51. アモルファスSiO2における欠陥と劣化

    金田千穂子

    固体物理　31　(10)　16(838)-22(844)　1996/10

  52. Hole Trapping due to Impurities in Amorphous Silicon Dioxide Film

    C. Kaneta

    Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials (The Japan Society of Applied Physics)　512-514　1996

  53. Atomic Composition, Structure and Vibrational Excitation of Substitutional Carbon-Oxygen Complexes in Silicon Peer-reviewed

    H. Yamada-Kaneta, Y. Shirakawa, C. Kaneta

    Proceedings of NATO Advanced Research Workshop, OXYGEN '96 "Early Stages of Oxygen in Silicon"　389-396　1996

  54. Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film Peer-reviewed

    C. Kaneta

    Jpn. J. of Applied Physics　35, Part 1　(No.2B)　1540-1543　1996

  55. Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film

    C. Kaneta

    Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, (The Japan Society of Applied Physics)　279-281　1995

  56. Atomic Configurations and Electronic States of Carbon-Hydrogen Complex in Silicon Peer-reviewed

    C. Kaneta, H. Katayama-Yoshida

    Proceedings of the 22th International Conference on the Physics of Semiconductors　1-3　2215-2218　1995

  57. Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon Peer-reviewed

    C. Kaneta, H. Katayama-Yoshida

    Materials Science Forum　196-201　897-902　1995

  58. Electronic Structure and Atomic Displacement of Carbon-Hydrogen Complexes in Silicon Peer-reviewed

    C. Kaneta, H. Katayama-Yoshida

    Solid State Communications　93　(5)　460-461　1995

  59. Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon Peer-reviewed

    C. Kaneta, T. Sasaki, H. Katayama-Yoshida

    Materials Science Forum　143-147　(Part2)　957-962　1994

  60. Atomic Configuration, Stability, and Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon

    C. Kaneta, Y. Shirakawa, H. Yamada-Kaneta, T. Sasaki, H. Katayama-Yoshida

    Proceedings of the Second International Conference & Exhibition on Computer Applications to Materials and Molecular Science and Engineering, "Computer Aided Innovation of New Materials II" Part 1 (1993) pp.579-582, North-Holland.　1993

  61. Shifts of Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-doping Peer-reviewed

    H. Yamada-Kaneta, C. Kaneta, T. Ogawa

    Materials Science Forum　117-118　201-206　1993

  62. Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystals Peer-reviewed

    H. Yamada-Kaneta, C. Kaneta, T. Ogawa

    Phys. Rev. B　47　9338-9345　1993

  63. Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon Peer-reviewed

    C. Kaneta, T. Sasaki, H. Katayama-Yoshida

    Material Science Forum　117-118　81-86　1993

  64. Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal Peer-reviewed

    H. Yamada-Kaneta, C. Kaneta, T. Ogawa

    Materials Science Forum　38-87　419-427　1992

  65. Atomic Configuration, Stabilizing Mechanism, and Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon Peer-reviewed

    C. Kaneta, T. Sasaki, H. Katayama-Yoshida

    Physical Review B　46　13179-13185　1992

  66. Atomic Configuration and Stability of Carbon-Oxygen Complex in Silicon Peer-reviewed

    C. Kaneta, H. Katayama-Yoshida, T. Sasaki

    Proceedings of the 20th International Conference on the Physics of Semiconductors　1　561　1990

  67. Theory of Local-Phonon-Coupled Low-Energy Anharmonic Excitation of the Interstitial Oxygen in Silicon Peer-reviewed

    H. Yamada-Kaneta, C. Kaneta, T. Ogawa

    Phys. Rev. B　42　9650-9656　1990

  68. Local Phonon Coupling Model for Anharmonic Lattice Excitation in Si:O Peer-reviewed

    H. Yamada-Kaneta, C, Kaneta, T. Ogawa, K. Wada

    Materials Science Folum　38-41　637-641　1989

  69. Cluster ab initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon Peer-reviewed

    C. Kaneta, H. Yamada-Kaneta, A. Ohsawa

    Materials Science Forum　38-41　323-328　1989

  70. Far-Infrared Absorption by Oxygen in Silicon Peer-reviewed

    H. Yamada-Kaneta, T. Ogawa, S. Muraishi, C. Kaneta, K. Wada

    Appl. Phys. Lett.　53　2391-2393　1988

  71. Lattice Dynamics of Black Phosphorous I Valence Force Field Model Peer-reviewed

    C. Kaneta, H. Katayama-Yoshida, A. Morita

    Journal of the Physical Society of Japan　55　(4)　1213-1223　1986

    Publisher: THE PHYSICAL SOCIETY OF JAPAN

    DOI： 10.1143/JPSJ.55.1213 　

    ISSN： 0031-9015

    More details Close

    Calculation of the lattice dynamical properties of black phosphorus, which is a narrow-gap covalent semiconductor with a layered structure, based on the valence force field model is presented. The results obtained are in good agreement with the experiments, except for infrared active optical modes. The results are discussed in connection with the crystal structure and the chemical-bonding nature of black phosphorus.

  72. Lattice Dynamics of Black Phosphorous II Adiabatic Bond Charge Model Peer-reviewed

    C. Kaneta, H. Katayama-Yoshida, A. Morita

    Journal of the Physical Society of Japan　55　(4)　1224-1232　1986

    Publisher: THE PHYSICAL SOCIETY OF JAPAN

    DOI： 10.1143/JPSJ.55.1224 　

    ISSN： 0031-9015

    More details Close

    Calculation of the lattice dynamical properties of black phosphorus based on the adiabatic bond charge model (BCM) is presented. The results obtained are in good agreement with the experiments including infrared active optical modes which were unable to be explained by the valence force field model. It is shown that the success of BCM in explaining these modes is attributed to the fact that it contains the degrees of freedom corresponding to the polarization accompanying these modes.

  73. Anisotropic Mobility and Electron-Phonon Interaction in Black Phosphorous Peer-reviewed

    A, Morita, H. Asahina, C. Kaneta, T. Sasaki

    Proc. of 17th Int. Conf. Phys. on Semiconductors　1321-1324　1984

  74. Lattice Dynamics of Black Phosphorous Peer-reviewed

    A. Morita, C. Kaneta, H. Katayama-Yoshida

    Physica　117B & 118B　517-519　1983

  75. Lattice Dynamics of Black Phosphorous Peer-reviewed

    C. Kaneta, H. Katayama-Yoshida, A. Morita

    Solid State Communications　44　(5)　613-617　1982

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Misc. 1

  1. 酸化膜中の電荷捕獲

    金田千穂子

    BREAK THROUGH (リアライズ社)　12-15　1996/06

Books and Other Publications 2

  1. マテリアルズ・インフォマティクスによる材料開発と活用集

    技術情報協会

    技術情報協会　2019/01

    ISBN: 9784861047329

  2. エネルギー科学における多階層連結コンピューティング

    三間圀興(編集)

    国際高等研究所　2011/03

    ISBN: 9784906671854

Presentations 31

  1. Materials informatics approach for design of Si/Ge layered structures with low thermal conductivity Invited

    Chioko Kaneta, Norihiko Takahashi, Yu Liu

    International Conference on Processing & Manufactoring of advanced Materials　2021

  2. Materials informatics approach for design of Si-based SiGe materials with low thermal conductivity

    Chioko Kaneta, Norihiko Takahashi, Yu Liu

    30th Int. Conf. on Defects in Semiconductors　2019/07

  3. MIを活用した材料設計事例 Invited

    金田千穂子

    情報統合型物質・材料開発イニシアティブ 第７回 MI2Iフォーラム　2018/09/12

  4. Design of Si;Ge Layered Nano Structures with Low Thermal Conductivity

    Norihiko Takahashi, Yu Liu, Chioko Kaneta

    European Materials Research Society, Spring Meeting　2018/06

  5. Nano-second Order Molecular Dynamics Simulations for Graphene Formation Process on SiC

    So Takamoto, Takahiro Yamasaki, Jun Nara, Takahisa Ohno, Chioko Kaneta, Satoshi Izumi

    International Symposium on Epitaxial Graphene (ISEG-2017)　2017/11

  6. Si/SiO2界面～酸化、電子状態、欠陥 Invited

    金田千穂子, 高橋憲彦, 山崎隆浩, 高本聡

    シリコンテクノロジー分科会 第190回研究集会, 「Si 結晶成長・プロセスに関わるシミュレーョン 結晶成長・プロセスに関わるシミュレーョン」　2016/02/26

  7. BおよびPをドープしたSi量子ドットの電子状態 Invited

    金田千穂子

    NIMSナノシミュレーションワークショップ　2015/11/27

  8. BおよびPをドープしたSi量子ドットの電子状態～不純物準位のドーパント位置依存性

    金田千穂子

    2015年 第62回応用物理学会春季学術講演会　2015/03/11

  9. Electronic properties of B and/or P doped Si quantum dots

    C. Kaneta

    28th Int. Conf. on Defects in Semiconductors　2015

  10. BおよびPをドープしたSi量子ドットの電子状態

    金田千穂子

    2014年(平成26年) 第75回応用物理学会秋季学術講演会

  11. Oxidation of Si/SiO2 Interfaces: Molecular Dynamics Simulations with Variable Charge Interatomic Potentials Invited

    Chioko Kaneta

    International Workshop of Computational Nano-Materials Design on Green Energy

  12. Nano-simulations for development of electronic devices Invited

    Chioko Kaneta

    International Workshop of Nano-Spintronics

  13. ナノデバイス、材料開発のためのナノシミュレーション Invited

    金田千穂子

    第3回CMSI（計算物質科学イニシアティブ）産官学連続研究会　2012/02/10

  14. First-principles molecular dynamics simulations for Li+ diffusion in Li3PO4 and Li3PS4 electrolytes

    Minoru Ikeda, Takahiro Yamasaki, Chioko Kaneta, Kenji Homma, Tamotsu Yamamoto, Tsutom Yamamoto

    Pasific RIM Meeting (PRiME)　2012

  15. A new practical approach to estimate the standard free energy of binding in bio-molecular system

    Yoshiaki Tanida, Takashi Mitsui, Azuma Matuura, Chioko Kaneta, Shunji Matsumoto

    Structure-Based Drug Design conference　2011

  16. ナノデバイス開発における量子シミュレーションの活用と展開 Invited

    金田 千穂子

    2010年(平成22年) 春季第57回応用物理学関係連合講演会 第46回応用物理学会スクール　2010/03/17

  17. HfO2系高誘電率ゲート絶縁膜材料の熱的安定性 Invited

    金田千穂子, 高橋憲彦, 山崎隆浩

    2009年(平成21年)秋季 第70回応用物理学会学術講演会 シンポジウム

  18. 半導体デバイス用絶縁膜材料開発のための原子スケールシミュレーション Invited

    金田千穂子

    企業研究会 Computer aided Materials and Moleculer Desgin Forum　2009/01/09

  19. First-principles Analysis of C2H2 molecule diffusion and its dissociation process on Ferromagnetic bcc-Fe(110) surface

    Minoru Ikeda, Takahiro Yamasaki, Chioko Kaneta

    The 3rd Theory Meets Industry International Workshop　2009

  20. SiO2およびHfO2膜中の欠陥生成 Invited

    金田千穂子

    NWDTF in Kochi　2007/12/26

  21. 半導体デバイス開発における原子スケールシミュレーションの活用 Invited

    金田千穂子

    日本物理学会 第62回年次大会, シンポジウム　2007/09/21

  22. 半導体デバイス用絶縁膜材料の原子スケールシミュレーション Invited

    金田千穂子, 山崎隆浩, 高橋憲彦

    第100回触媒討論会　2007/09/17

  23. SiO2およびHfO2膜中の欠陥と電荷捕獲中心生成

    金田千穂子, 山崎隆浩

    第68回応用物理学会学術講演会

  24. 次世代シリコンデバイス用高誘電率ゲート絶縁膜における欠陥生成と劣化 Invited

    金田千穂子, 山崎隆浩

    NAREGIナノサイエンス実証研究 第４回公開シンポジウム

  25. アモルファスHfO2ゲート絶縁膜中の欠陥生成

    金田千穂子, 山崎隆浩

    ゲートスタック研究会 ―材料・プロセス・評価の物理―（第12回研究会）

  26. アモルファスHfO2ゲート絶縁膜中の欠陥の生成エネルギーと電子状態

    金田千穂子, 山崎隆浩

    第67回応用物理学会学術講演会

  27. HfO2系ゲート絶縁膜材料の熱的安定性に関する分子動力学のシミュ レーション事例を中心 Invited

    金田千穂子

    21世紀COE「原子論的生産技術の創出拠点」ワークショップ　2006/05/17

  28. 21世紀の「知的ものづくり」に向けて～NAREGIへの期待 ～ Invited

    金田千穂子

    第19回分子シミュレーション討論会　2005/11/29

  29. Dissociation of hydrogen atoms terminating Si(100)/SiO2 interface defects

    C. Kaneta, T. Yamasaki, T. Uchiyama, T. Uda, K. Terakura

    the 31 th IEEE Semiconductor Interface Specialists Conference,　2000

  30. Interface States Due to Silicon Dangling Bonds in Si(100)/SiO2 and the Passivation and Depassivation by Atomic Hydrogen

    C. Kaneta, T. Yamasaki, T. Uchiyama, T. Uda, K. Terakura

    The 30 th IEEE Semiconductor Interface Specialists Conference　1999

  31. Hole Trap due to Local Distortion and Impurities in Amorphous Silicon Dioxide Film

    C. Kaneta

    The 26th IEEE Semiconductor Interface Specialists Conference　1995

Show all Show first 5

Industrial Property Rights 2

  1. 半導体装置の製造方法および半導体装置

    金田 千穂子, 山崎 隆浩, 高橋 憲彦

    Property Type: Patent

  2. 半導体装置およびその製造方法

    小坂 裕子, 山崎 隆浩, 金田 千穂子

    Property Type: Patent

Teaching Experience 1

  1. Thermodynamics and Statistical Mechanics A　Tohoku University

Social Activities 5

  1. 日本女性技術者フォーラム 産業技術勉強部会長

    2016/06 - Present

  2. 日本女性技術者フォーラム 運営委員長

    2014/06 - 2016/05

  3. 多様性から広がる未来

    ものづくり企業のための女性技術者リーダー養成塾 特別講演会「女性の力を経営に活かすには」

    2016/07/12 -

  4. 自分が選ぶ暮らしの働き方

    地方がトレンド 女性のしなやかな生き方ワークライフ

    2016/03/27 -

  5. 女性研究者・技術者の活躍に向けて

    あいち女性技術者・研究者活躍促進シンポジウム

    2016/01/26 -