Details of the Researcher

PHOTO

Takeshi Odagawa
Section
Institute for Materials Research
Job title
Assistant Professor
Degree

  • Ph.D. (Tohoku University)

e-Rad No.
71040086
Researcher ID
PTF-2795-2026

Research History 3

  • 2026/04 - Present
    Tohoku University　Institute for Materials Research　Assistant Professor

  • 2025/04 - 2026/03
    Japan Society for the Promotion of Science　JSPS Research Fellow

  • 2024/11 - 2025/05
    University of Warsaw　Institute of Experimental Physics, Faculty of Physics

Education 3

  • Tohoku University　Graduate School of Engineering　Department of Materials Science

    2021/04 - 2026/03

  • University of Warsaw　Institute of Experimental Physics, Faculty of Physics

    2024/11 - 2025/05

  • Tohoku University　School of Engineering　Department of Materials Science and Engineering

    2017/04 - 2021/03

Professional Memberships 1

  • The Japan Society of Applied Physics

    2021/07 - Present

Research Areas 3

  • Nanotechnology/Materials / Thin-film surfaces and interfaces /

  • Natural sciences / Magnetism, superconductivity, and strongly correlated systems /

  • Natural sciences / Semiconductors, optical and atomic physics /

Papers 3

  1. Selective Synthesis of Large-Area Monolayer Tin Sulfide from Simple Substances International-journal International-coauthorship Peer-reviewed

    Kazuki Koyama, Jun Ishihara, Nozomi Matsui, Atsuhiko Mori, Sicheng Li, Jinfeng Yang, Shiro Entani, Takeshi Odagawa, Makito Aoyama, Chaoliang Zhang, Ye Fan, Ibuki Kitakami, Sota Yamamoto, Toshihiro Omori, Yasuo Cho, Stephan Hofmann, Makoto Kohda

    Nano Letters　25　(25)　2025/05

    Publisher: ACS Publications

    DOI： 10.1021/acs.nanolett.5c01639 　

    More details Close

    Both tin monosulfide (SnS) and tin disulfide (SnS2) are thermodynamically stable layered materials with the potential for spin-valleytronic devices and photodetectors. Notably, SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persistent spin helix state in the monolayer limit. Unlike SnS2, however, creating large-area atomic-thickness crystals of SnS is challenging, owing to the enhanced interlayer interactions caused by lone pair electrons. Here, we demonstrate that p-type SnS can be selectively grown by varying the sulfur vapor concentration relative to tin using high-purity elemental precursors in a chemical vapor deposition setup. Based on that, we further show that monolayer SnS crystals, up to several tens of micrometers in lateral scale, can be obtained by controlled sublimation of bulk SnS crystals. These findings pave the way for device applications based on high-quality tin sulfide.

  2. Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures International-journal Peer-reviewed

    Takeshi Odagawa, Sota Yamamoto, Chaoliang Zhang, Kazuki Koyama, Jun Ishihara, Giacomo Mariani, Yoji Kunihashi, Haruki Sanada, Junsaku Nitta, Makoto Kohda

    APL Materials　12　(6)　2024/06

    Publisher: AIP Publishing

    DOI： 10.1063/5.0214718 　

    eISSN： 2166-532X

    More details Close

    We investigate the excitonic species in WS2 monolayers transferred onto III–V semiconductor substrates with different surface treatments. When the III–V substrates were covered with amorphous native oxides, negatively charged excitons dominated the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III–V substrates were reduced, neutral excitons began to dominate the spectral weight, indicating a reduction in the electron density in the WS2 monolayers. The removal of the native oxides enhanced the electron transfer from the WS2 monolayer to the III–V substrate. In addition, an additional shoulder-like PL feature appeared ∼50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III–V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low-energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, implement deterministic carrier localization or delocalization for the 2D materials, and facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.

  3. Intravalley scattering probed by excitation energy dependence of valley polarization in monolayer MoS2 International-journal Peer-reviewed

    Eito Asakura, Takeshi Odagawa, Masaki Suzuki, Shutaro Karube, Junsaku Nitta, Makoto Kohda

    Journal of Physics D: Applied Physics　54　(48)　2021/12

    Publisher: IOP Publishing

    DOI： 10.1088/1361-6463/ac1626 　

    ISSN： 0022-3727

    eISSN： 1361-6463

Presentations 11

  1. Probing anisotropic magnetism in Cr2Ge2Te6 by magneto-Raman spectroscopy International-presentation International-coauthorship

    Takeshi Odagawa, Tomasz Fąs, Jan Suffczyński, Katarzyna Gas, Rafał Bożek, Maciej Sawicki, Shunsuke Fukami, Makoto Kohda

    The 16th International Conference on Recent Progress in Graphene and 2D Materials Research (RPGR2025)　2025/11/05

  2. Selective Growth of High-Purity Layered Tin Sulfides by Chemical Vapor Deposition International-presentation

    K. Koyama, J. Ishihara, T. Odagawa, S. Yamamoto, M. Kohda

    The 23rd International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 23)　2025/07/24

  3. Interfacial engineering in 2D/3D van der Waals heterostructures Invited

    Takeshi Odagawa

    Seminar of Semiconductor Physics　2024/11/19

  4. Interlayer electron transfer from WS2 monolayers to III–V semiconductor substrates enhanced by surface treatments

    Takeshi Odagawa, Sota Yamamoto, Chaoliang Zhang, Kazuki Koyama, Jun Ishihara, Giacomo Mariani, Yoji Kunihashi, Haruki Sanada, Junsaku Nitta, Makoto Kohda

    The 85th JSAP Autumn Meeting 2024　2024/09/18

  5. Effect of surface treatments on interlayer electron transfer in 2D WS2/3D III–V semiconductor heterostructures International-presentation

    T. Odagawa, S. Yamamoto, C. Zhang, K. Koyama, J. Ishihara, G. Mariani, Y. Kunihashi, H. Sanada, J. Nitta, M. Kohda

    The 7th QST International Symposium　2024/07/24

  6. Carrier Transfer in Monolayer WS2/III–V Semiconductor Heterostructures International-presentation

    T. Odagawa, C. Zhang, K. Koyama, J. Ishihara, S. Yamamoto, G. Mariani, Y. Kunihashi, H. Sanada, J. Nitta, M. Kohda

    The 7th Symposium for the Core Research Clusters for Materials Science and Spintronics, and the 6th Symposium on International Joint Graduate Program in Materials Science and Spintronics　2023/11/28

  7. Valley polarization recovery driven by intravalley scattering in monolayer MoS2

    T. Odagawa, E. Asakura, M. Suzuki, S. Karube, J. Nitta, M. Kohda

    The 26th Symposium on the Physics and Applications of Spin-Related Phenomena in Semiconductors　2021/12/20

  8. Valley Polarization Recovery Driven by Intravalley Scattering in Mo-Based Monolayer Transition-Metal Dichalcogenides International-presentation

    Takeshi Odagawa, Eito Asakura, Masaki Suzuki, Shutaro Karube, Junsaku Nitta, Makoto Kohda

    The International Symposium on Novel Materials and Quantum Technologies 2021 (ISNTT2021)　2021/12/16

  9. Intravalley Scattering above the B Exciton Resonance in Monolayer Transition-Metal Dichalcogenides International-presentation

    Takeshi Odagawa, Eito Asakura, Masaki Suzuki, Shutaro Karube, Junsaku Nitta, Makoto Kohda

    The 24th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-24)　2021/11/02

  10. Intravalley Spin Relaxation of B Excitons in Monolayer MoS2 International-presentation

    Takeshi Odagawa, Eito Asakura, Masaki Suzuki, Shutaro Karube, Junsaku Nitta, Makoto Kohda

    The 5th Symposium for the Core Research Clusters for Materials Science and Spintronics, and the 4th Symposium on International Joint Graduate Program in Materials Science　2021/10/26

  11. Intravalley Scattering Probed by Excitation Energy Dependence of Valley Polarization in Monolayer MoS2

    Takeshi Odagawa, Eito Asakura, Masaki Suzuki, Shutaro Karube, Junsaku Nitta, Makoto Kohda

    The 82nd JSAP Autumn Meeting 2021　2021/09/12

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Industrial Property Rights 3

  1. 電子スピン波の波長変換装置、演算装置、および電子スピン波の位相変調装置

    古舘 海生, 菊池 奎斗, 小田川 武史, 菅原 楓大, 関 剛斎, 山本 壮太, 石原 淳, 好田 誠

    特許7609502

    Property Type: Patent

    Holder: 国立大学法人東北大学

  2. Electron-spin-wave wavelength conversion device, calculation device, and electron-spin-wave phase modulation device

    FURUDATE Kaisei, KIKUCHI Keito, ODAGAWA Takeshi, SUGAWARA Futa, SEKI Takeshi, YAMAMOTO Sota, ISHIHARA Jun, KODA Makoto

    Property Type: Patent

  3. 光電素子の作製方法

    小田川 武史, 張 超亮, 小山 和輝, 石原 淳, 山本 壮太, 好田 誠, 眞田 治樹, マリアーニ ジャコモ, 新田 淳作, 国橋 要司

    Property Type: Patent

Research Projects 1

  1. Spin-Related Physics at Heterointerfaces between Layered Magnetic Insulators and Compound Semiconductors Competitive

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for JSPS Research Fellows

    Institution: Tohoku University

    2025/04 - 2027/03

Teaching Experience 2

  1. Introductory Science Experiments　Tohoku University Undergraduate (liberal arts)

  2. Team-Based Engineering for Invention　Tohoku University Undergraduate (specialized)

Academic Activities 1

  1. Planned and organized an international workshop

    Tohoku University, Sendai 980-8577, Japan

    2023/11/29 - 2023/11/30

    Activity type: Academic society, research group, etc.