Details of the Researcher

PHOTO

Noriyuki Yokouchi
Section
Research Institute of Electrical Communication
Job title
Specially Appointed Professor(Research)

Research History 10

  • 2026/04 - Present
    Tohoku University　Research Institute of Electrical Communication

  • 2026/04 - Present
    古河電気工業株式会社　先端技術研究所　フェロー

  • 2023/04 - 2026/03
    古河電気工業株式会社　研究開発本部 フォトニクス研究所　フェロー

  • 2022/04 - 2023/03
    古河電気工業株式会社　研究開発本部 情報通信・エネルギー研究所　フェロー

  • 2018/08 - 2022/03
    American Furukawa Inc.　Silicon Valley Innovation Laboratories, Furukawa Electric　General Manager

  • 2015/03 - 2018/08
    古河電気工業株式会社　研究開発本部 コア技術融合研究所　フェロー

  • 2011/09 - 2015/03
    古河電気工業株式会社　研究開発本部 横浜研究所　主幹研究員

  • 2003/03 - 2011/08
    古河電気工業株式会社　研究開発本部 横浜研究所

  • 2001/08 - 2003/02
    University of Illinois Urbana-Champaign　Microelectronics Laboratory　Visiting Scientist

  • 1994/04 - 2001/08
    古河電気工業株式会社　研究開発本部 横浜研究所

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Education 3

  • 東京工業大学大学院　総合理工学研究科　物理情報工学専攻 博士後期課程

    1991/04 - 1994/03

  • 東京工業大学大学院　総合理工学研究科　物理情報工学専攻 修士課程

    1989/04 - 1991/03

  • 東京工業大学　工学部　電子物理工学科

    1985/04 - 1989/03

Committee Memberships 19

  • Vertical-Cavity Surface-Emitting Lasers, SPIE Photonics West　Program Committee Member

    2003 - Present

  • 電子情報通信学会エレクトロニクスソサイエティ　研究技術会議 庶務・財務幹事

    2016/06 - 2018/05

  • 電子情報通信学会エレクトロニクスソサイエティ　レーザ・量子エレクトロニクス研究専門委員会 幹事

    2004/06 - 2005/05

  • Optical Wireless and Fiber Power Transmission Conference 2019 (OWPT 2019)　Conference Co-Chair

    2019/04 -

  • The 25th International Semiconductor Laser Conference (ISLC 2016)　Program Committee Member

    2016/09 -

  • 2002 IEEE/LEOS Sumer Topical Meetings, VCSEL & Microcavity Lasers　Technical Program Committee Member

    2002/07 -

  • レーザー学会 光無線給電技術専門員会　副主査

    2018/04 - 2021/03

  • 電子情報通信学会エレクトロニクスソサイエティ　レーザ・量子エレクトロニクス研究専門委員会 専門委員

    2005/06 - 2010/05

  • 電子情報通信学会エレクトロニクスソサイエティ　レーザ・量子エレクトロニクス研究専門委員会 専門委員

    1996/05 - 2001/08

  • The 8th Optical Wireless and Fiber Power Transmission Conference 2026 (OWPT 2026)　Program Committee Member

    2026/04 -

  • The 7th Optical Wireless and Fiber Power Transmission Conference 2025 (OWPT 2025)　Program Committee Member

    2025/04 -

  • The 6th Optical Wireless and Fiber Power Transmission Conference 2024 (OWPT 201　Program Committee Member

    2024/04 -

  • The 5th Optical Wireless and Fiber Power Transmission Conference 2023 (OWPT 2023)　Program Committee Member

    2023/04 -

  • 24th OptoElectronics and Communication Conference/International Conference on Photonics in Switching and Computing 2019 (OECC/PSC 2019)　Technical Program Comittee Member

    2019/07 -

  • The 24th Congress of the International Commission for Optics (ICO-24)　Program Committee Member

    2017/08 -

  • 21st Optoelectronics and Communications Conference/International Conference on Photonics in Switching 2016 (OECC/PS 2016)　Technical Program Comittee Member

    2016/07 -

  • 28th International Conference on Indium Phosphide & Related Materials (IPRM 2016)　Program Committee Member

    2016/06 -

  • The 18th OptoElectronics and Communications Conference (OECC 2013). Photonics in Switching 2013 (PS 2013)　Program Committee Member

    2013/07 -

  • The 15th Optoelectronics and Communications Conference (OECC 2010)　Treasury Committee Member

    2010/07 -

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Professional Memberships 3

  • IEEE Photonics Siciety

  • 電子情報通信学会

  • 応用物理学会

Research Areas 1

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Papers 47

  1. Two-dimensional photonic crystal confined vertical-cavity surface-emitting lasers

    N. Yokouchi, A.J. Danner, K.D. Choquette

    IEEE Journal of Selected Topics in Quantum Electronics　9　(5)　1439-1445　2003/09

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/jstqe.2003.819521 　

    ISSN： 1077-260X

  2. Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures

    Noriyuki Yokouchi, Aaron J. Danner, Kent D. Choquette

    Applied Physics Letters　82　(9)　1344-1346　2003/03/03

    Publisher: AIP Publishing

    DOI： 10.1063/1.1556562 　

    ISSN： 0003-6951

    eISSN： 1077-3118

    More details Close

    A vertical-cavity surface-emitting laser (VCSEL) having a two-dimensional (2-D) photonic crystal structure on its surface has been investigated for single-lateral-mode operation. We evaluated the effective index change of a VCSEL cavity introduced by a 2-D pattern. Our experimental results showed good agreement with a theoretical model in which the influence of a finite etching depth was taken into consideration. The etching-depth dependence parameter γ, which can be explained by the optical power distribution inside a VCSEL structure, will be helpful for controlling the lateral mode of VCSEL devices.

  3. Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm

    N. Yokouchi, N. Yamanaka, N. Iwai, Y. Nakahira, A. Kasukawa

    IEEE Journal of Quantum Electronics　32　(12)　2148-2155　1996

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/3.544762 　

    ISSN： 0018-9197

  4. 40 A continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror

    N. Yokouchi, T. Miyamoto, T. Uchida, Y. Inaba, F. Koyama, K. Iga

    IEEE Photonics Technology Letters　4　(7)　701-703　1992/07

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/68.145243 　

    ISSN： 1041-1135

    eISSN： 1941-0174

  5. An Optical Absorption Property of Highly Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy

    Noriyuki Yokouchi, Takashi Uchida, Tomoyuki Miyamoto, Yuichi Inaba, Fumio Koyama Fumio Koyama, Kenichi Iga Kenichi Iga

    Japanese Journal of Applied Physics　31　(5R)　1255-1255　1992/05/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.31.1255 　

    ISSN： 0021-4922

    eISSN： 1347-4065

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    The optical absorption property of highly beryllium (Be)-doped GaInAsP (λg=1.31 µm, p=2×1019 cm-3) grown by chemical beam epitaxy (CBE) was investigated. The absorption coefficient was estimated from the transmissivity of a Fabry-Perot resonator formed by selective etching of an InP substrate. We found a fairly large absorption (α\cong400 cm-1) in Be-doped material in the longer wavelength region (λ>1.35 µm).

  6. Long-Wavelength Multilayered InAs Quantum Dot Lasers

    Hitoshi Shimizu, Shanmugam Saravanan, Junji Yoshida, Sayoko Ibe, Noriyuki Yokouchi

    Japanese Journal of Applied Physics　46　(2R)　638-638　2007/02/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.46.638 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  7. Comparison between multilayered InAs quantum dot lasers with different dot densities

    Hitoshi Shimizu, Shanmugam Saravanan, Junji Yoshida, Sayoko Ibe, Noriyuki Yokouchi

    Applied Physics Letters　88　(24)　2006/06/12

    Publisher: AIP Publishing

    DOI： 10.1063/1.2213520 　

    ISSN： 0003-6951

    eISSN： 1077-3118

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    This letter describes the dependence of the dot density per layer on laser performance for 1.3-μm range multilayered InAs quantum dot (QD) lasers having 12-QD layer in order to increase the maximum modal gain of the ground state (GS). Twelve-QD lasers with almost identical photoluminescence (PL) intensities and full width at half maximum (FWHM) were prepared, with a dot density per layer in the range of (1.4–3.0)×1010cm−2. Results for the undoped 12-QD lasers reveal that the lasers with almost the same PL intensity and FWHM have an almost identical relationship between the threshold current density (Jth) and the mirror loss and have much the same maximum mirror loss from which lasers can oscillate from the GS. This is probably due to the fact that the Jth of dot lasers fabricated by the self-assembled method are strongly dominated by the gain width that is governed by the nonuniformity of QDs.

  8. Various low group velocity effects in photonic crystal line defect waveguides and their demonstration by laser oscillation

    Kazuaki Kiyota, Tomofumi Kise, Noriyuki Yokouchi, Toshihide Ide, Toshihiko Baba

    Applied Physics Letters　88　(20)　2006/05/15

    Publisher: AIP Publishing

    DOI： 10.1063/1.2204647 　

    ISSN： 0003-6951

    eISSN： 1077-3118

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    We investigated propagating modes in a two-dimensional photonic crystal slab waveguide with a line defect narrower than a single line missing hole structure from the low group velocity point of view. These modes showed low group velocities not due to the conventional distributed feedback (DFB) between a forward and a backward mode with the same lateral field distribution, but due to a DFB between modes with different lateral field distribution or property of a start point of a photonic-band-gap-guided mode. These low group velocities of over 40 were demonstrated as a Fabry-Pérot lasing oscillation due to gain enhancement.

  9. InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)

    Hitoshi Shimizu, Shanmugam Saravanan, Junji Yoshida, Sayoko Ibe, Noriyuki Yokouchi

    Japanese Journal of Applied Physics　44　(8L)　L1103-L1103　2005/08/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.44.l1103 　

    ISSN： 0021-4922

    eISSN： 1347-4065

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    This paper describes the successful stacking of multilayered InAs quantum dots (QD) on a GaAs substrate up to 12 layers. The laser oscillated from the ground state under the condition of mirror loss at less than 7–8 cm-1. The extremely low threshold current density per QD-layer of 7 A/cm2/layer was obtained with a lasing wavelength of 1.21 µm at room temperature, which is the lowest value for any known semiconductor laser.

  10. Transverse modes of photonic crystal vertical-cavity lasers

    Aaron J. Danner, James J. Raftery, Noriyuki Yokouchi, Kent D. Choquette

    Applied Physics Letters　84　(7)　1031-1033　2004/02/16

    Publisher: AIP Publishing

    DOI： 10.1063/1.1646729 　

    ISSN： 0003-6951

    eISSN： 1077-3118

    More details Close

    The control of lateral mode operation using a photonic crystal in a vertical-cavity surface-emitting laser (VCSEL) is analyzed and confirmed experimentally. By controlling design parameters of the photonic crystal pattern, we have produced photonic crystal VCSELs that operate in higher order defect modes in addition to the fundamental defect mode. The transverse modal behavior is consistent with the predictions of a theoretical model in which the etching depth dependence of the air holes of the photonic crystals is considered. We also have determined the lower limit of optical confinement required from the photonic crystal pattern to influence the output beam of the laser.

  11. Coupled-defect photonic crystal vertical cavity surface emitting lasers

    A.J. Danner, J.C. Lee, J.J. Raftery, N. Yokouchi, K.D. Choquette

    Electronics Letters　39　(18)　1323-1324　2003/09/04

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:20030866 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  12. Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure

    Noriyuki Yokouchi, Aaron J. Danner, Kent D. Choquette

    Applied Physics Letters　82　(21)　3608-3610　2003/05/26

    Publisher: AIP Publishing

    DOI： 10.1063/1.1577835 　

    ISSN： 0003-6951

    eISSN： 1077-3118

    More details Close

    A vertical-cavity surface-emitting laser with a two-dimensional photonic crystal (PC) structure has been investigated for single lateral mode operation. The PC confined mode can be controlled by the lattice constant, the hole diameter, the etching depth, and the defect structure. A seven-point defect structure is proposed to enhance the confinement effect, which is diluted by finite hole depth of the PC structure. We obtained a pure PC confined mode under room-temperature cw conditions with a PC lattice constant of 2 μm, hole diameters of 1.0 and 1.4 μm, and depths of 1.85 and 1.92 μm, respectively.

  13. Transverse mode control and reduction of thermal resistance in 850nm oxide confined VCSELs Peer-reviewed

    N. Ueda, M. Tachibana, N. Iwai, T. Shinagawa, M. Ariga, Y. Sasaki, N. Yokouchi, Y. Shiina, A. Kasukawa

    IEICE Trans. Electron.　E85-C　64-70　2002

  14. GaInAsP/InP Attenuator Integrated Waveguide Photodetector (AIPD) Based on the Franz-Keldysh Effect

    Noriyuki Yokouchi, Junji Yoshida, Nobumitsu Yamanaka, Takeharu Yamaguchi, Kazuaki Nishikata

    Japanese Journal of Applied Physics　38　(2S)　1219-1219　1999/02/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.38.1219 　

    ISSN： 0021-4922

    eISSN： 1347-4065

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    A waveguide photodetector monolithically integrated with an optical attenuator based on the Franz-Keldysh effect at the input section is proposed. The effective sensitivity of the device can be controlled by applying the reverse bias at the attenuator section. Using this device, the realization of a receiver module with low power consumption and small signal distortion under high input power can be expected. In our first demonstration, the intrinsic sensitivity of the device without attenuation is 0.25 A/W. The largest variable sensitivity range of 11 dB is realized at the reverse bias of 32 V.

  15. Attenuator integrated waveguide photodetectors (AIPD) with variable sensitivity range of 11 dB

    N. Yokouchi, J. Yoshida, N. Yamanaka, T. Yamaguchi, K. Nishikata

    IEEE Photonics Technology Letters　10　(6)　863-865　1998/06

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/68.681511 　

    ISSN： 1041-1135

    eISSN： 1941-0174

  16. Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers

    S. Uchiyama, N. Yokouchi, T. Ninomiya

    IEEE Photonics Technology Letters　9　(2)　141-142　1997/02

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/68.553065 　

    ISSN： 1041-1135

    eISSN： 1941-0174

  17. Structural dependence of 1.3 µm narrow beam lasers fabricated by selective MOCVD

    A. Kasukawa, N. Yamanaka, N. Iwai, Y. Nakahira, N. Yokouchi

    Electronics Letters　32　(14)　1304-1305　1996/07/04

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19960847 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  18. Estimation of waveguide loss of 1.3 µm integrated tapered MQW fabricated by selective area MOCVD

    A. Kasukawa, N. Iwai, N. Yamanaka, Y. Nakahira, N. Yokouchi

    Electronics Letters　32　(14)　1294-1296　1996/07/04

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19960836 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  19. Low threshold room temperature continuous wave operationof 1.3 µm GaInAsP/InP strained layer multiquantum well surface emitting laser

    S. Uchiyama, N. Yokouchi, T. Ninomiya

    Electronics Letters　32　(11)　1011-1013　1996/05/23

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19960676 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  20. Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy

    Yoichiro Kurita, Noriyuki Yokouchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga Kenichi Iga

    Japanese Journal of Applied Physics　34　(10R)　5626-5626　1995/10/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.34.5626 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    The absorption coefficient and refractive index variations due to quantum confined Stark effect in a GaInAsP/InP multiple quantum well grown by chemical beam epitaxy have been investigated. The refractive index variation was estimated from the variation of the optical absorption coefficient spectra for various electric fields. The optical absorption coefficient spectra was directly measured by transmission experiments. The maximum refractive index variation was estimated to be 3% at an applied reverse bias voltage of 3 V.

  21. Very low threshold current density 1.3 µm InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers

    A. Kasukawa, N. Yokouchi, N. Yamanaka, N. Iwai

    Electronics Letters　31　(20)　1749-1750　1995/09/28

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19951223 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  22. GaxIn1-x/AsyP1-y-InP tensile-strained quantum wells for 1.3-μm low-threshold lasers

    N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

    IEEE Photonics Technology Letters　7　(8)　842-844　1995/08

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/68.403991 　

    ISSN： 1041-1135

    eISSN： 1941-0174

  23. InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers

    Akihiko Kasukawa, Noriyuki Yokouchi, Nobumitsu Yamanaka, Norihiro Iwai, Takeyoshi Matsuda Takeyoshi Matsuda

    Japanese Journal of Applied Physics　34　(8A)　L965-L965　1995/08/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.34.l965 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    By introducing InGaP tensile-strained layers as barriers of InAsP compressively strained multiple quantum wells, InAsP/InGaP strain-compensated multiple quantum wells with high crystalline quality were successfully grown by metalorganic chemical vapor deposition. For the first time, a laser, emitting at 1.2 µ m, consisting of all-ternary quantum wells as an active layer was fabricated. The threshold current density of 1 kA/cm2 was obtained without the use of a separate confinement heterostructure layer for a cavity length of 1000 µ m.

  24. Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror

    A. Kasukawa, N. Iwai, N. Yamanaka, N. Yokouchi

    IEEE Journal of Selected Topics in Quantum Electronics　1　(2)　293-300　1995/06

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/2944.401208 　

    ISSN： 1077-260X

  25. Gain measurement of high characteristic temperature1.3 µm GaInAsP/InP strained-layer quantum well lasers with temperature dependent reflectivity (TDR) mirror

    A. Kasukawa, N. Iwai, N. Yamanaka, A. Hosotani, N. Yokouchi

    Electronics Letters　31　(8)　644-645　1995/04/13

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19950381 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  26. Output beam characteristics of 1.3 µm GaInAsP/InPSL-QW lasers with narrow and circular output beam

    A. Kasukawa, N. Iwai, N. Yamanaka, N. Yokouchi

    Electronics Letters　31　(7)　559-560　1995/03/30

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19950382 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  27. Low threshold 1.3 µm-GaInAsP/InP tensile strained single quantumwell lasers grown by low-pressure MOCVD

    N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

    Electronics Letters　31　(2)　104-105　1995/01/19

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19950054 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  28. Composition changes in GaxIn1−xAs/InP superlattice growth by chemical beam epitaxy

    N. Yokouchi, Y. Inaba, T. Uchida, T. Miyamoto, K. Mori, F. Koyama, K. Iga

    Journal of Crystal Growth　136　(1-4)　302-305　1994/03

    Publisher: Elsevier BV

    DOI： 10.1016/0022-0248(94)90429-4 　

    ISSN： 0022-0248

  29. Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxy

    Y. Inaba, T. Uchida, N. Yokouchi, T. Miyamoto, K. Mori, F. Koyama, K. Iga

    Journal of Crystal Growth　136　(1-4)　297-301　1994/03

    Publisher: Elsevier BV

    DOI： 10.1016/0022-0248(94)90428-6 　

    ISSN： 0022-0248

  30. Surface emitting lasers grown by chemical beam epitaxy

    T. Miyamoto, T. Uchida, N. Yokouchi, K. Iga

    Journal of Crystal Growth　136　(1-4)　210-215　1994/03

    Publisher: Elsevier BV

    DOI： 10.1016/0022-0248(94)90411-1 　

    ISSN： 0022-0248

  31. CBE grown 1.5 µm GaInAsP-InP surface emitting lasers

    T. Uchida, T. Miyamoto, N. Yokouchi, Y. Inaba, F. Koyama, K. Iga

    IEEE Journal of Quantum Electronics　29　(6)　1975-1980　1993/06

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/3.234460 　

    ISSN： 0018-9197

  32. Some optical characteristics of beryllium-doped InP grown by chemical beam epitaxy (CBE)

    Takashi Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

    Journal of Crystal Growth　129　(1-2)　275-280　1993/03

    Publisher: Elsevier BV

    DOI： 10.1016/0022-0248(93)90458-9 　

    ISSN： 0022-0248

  33. GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)

    Yuichi Inaba, Takashi Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Fumio Koyama Fumio Koyama, Kenichi Iga Kenichi Iga

    Japanese Journal of Applied Physics　32　(2R)　760-760　1993/02/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.32.760 　

    ISSN： 0021-4922

    eISSN： 1347-4065

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    A multi-quantum barrier (MQB) using the GaInAsP/InP system has been demonstrated for the first time. n-i-n tunneling diodes consisting of MQB and bulk barriers were grown by chemical beam epitaxy (CBE). From the measurement of 77 K current-voltage characteristics, the effective potential barrier height of 1.3 times the classical conduction band offset was obtained in the MQB structure.

  34. GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector

    Noriyuki Yokouchi, Tomoyuki Miyamoto, Takashi Uchida, Yuichi Inaba, Fumio Koyama Fumio Koyama, Kenichi Iga Kenichi Iga

    Japanese Journal of Applied Physics　32　(1S)　618-618　1993/01/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.32.618 　

    ISSN： 0021-4922

    eISSN： 1347-4065

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    We have realized a 1.55-µm GaInAsP/InP vertical cavity surface-emitting laser grown by chemical beam epitaxy (CBE). The optical loss at the contact layer was lowered to reduce the threshold. The threshold at 77-K CW was 2.6 mA and lasing was possible up to -1°C with a threshold current of 147 mA (pulsed). By changing the cavity length employing an external reflector, continuous tuning of 40 Å was achieved for the first time. Our result indicates that a short cavity structure can provide continuous wavelength tuning due to its wide longitudinal mode spacing.

  35. 化学ビーム成長(CBE)法によるGaInAsP/InP結晶成長と面発光レーザへの応用 Peer-reviewed

    内田 貴司, 横内 則之, 宮本 智之, 小山 二三夫, 伊賀 健一

    電子情報通信学会論文誌　J75-C1　(12)　741-747　1992/12

  36. Photoluminescence characterization of GaxIn1−xAs (0 ≤ x ≤ 0.32) strained quantum wells grown on InP by chemical beam epitaxy

    T. Uchida, Toshi K. Uchida, N. Yokouchi, T. Miyamoto, F. Koyama, K. Iga

    Journal of Crystal Growth　120　(1-4)　357-361　1992/05

    Publisher: Elsevier BV

    DOI： 10.1016/0022-0248(92)90418-i 　

    ISSN： 0022-0248

  37. GaInAsP/InP surface emitting lasers grown by chemical beam epitaxy

    T. Uchida, N. Yokouchi, T. Miyamoto, Y. Inaba, F. Koyama, K. Iga

    Electronics Letters　28　(6)　550-551　1992/03/12

    Publisher: Institution of Engineering and Technology (IET)

    DOI： 10.1049/el:19920347 　

    ISSN： 0013-5194

    eISSN： 1350-911X

  38. Ultra-thin GaxIn1−xAs/InP (0≤x≤0.47) layer growth by chemical beam epitaxy

    Noriyuki Yokouchi, Toshi K. Uchida, Takashi Uchida, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

    Journal of Electronic Materials　20　(12)　1049-1052　1991/12

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1007/bf03030205 　

    ISSN： 0361-5235

    eISSN： 1543-186X

  39. Beryllium Doping for Ga0.47In0.53As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)

    Takashi Uchida, Toshikazu Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Fumio Koyama Fumio Koyama, Kenichi Iga Kenichi Iga

    Japanese Journal of Applied Physics　30　(7B)　L1224-L1224　1991/07/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.30.l1224 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    High-concentration modulation doping of beryllium (Be) for GaInAs/InP quantum wells (QWs) was achieved by chemical beam epitaxy (CBE) up to 1×1019 cm-3. The modulation-doped quantum well (MD-QW) structure showed strong photoluminescence intensity. Broad-contact separate-confinement-heterostructure (SCH) QW lasers were also fabricated to evaluate the quality of MD-QWs. The measured threshold current density was 1.5-2.0 kA/cm2 for devices with 200 µm width and 200-1000 µm cavity length. High concentration and modulation doping for GaInAs/InP lasers was demonstrated.

  40. Room-Temperature Observation of Excitonic Absorption in GaxIn1-xAs/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy

    Noriyuki Yokouchi, Toshikazu Uchida, Takashi Uchida, Tomoyuki Miyamoto, Fumio Koyama Fumio Koyama, Kenichi Iga Kenichi Iga

    Japanese Journal of Applied Physics　30　(5B)　L885-L885　1991/05/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.30.l885 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    Ga x In1-x As/InP (0.2≤x≤0.47) lattice-matched and strained quantum wells having 10 wells were grown by chemical beam epitaxy (CBE). The absorption properties were investigated and excitonic absorption peaks were clearly observed at room temperature. The wavelengths of excitonic peaks were in good agreement with a theoretical estimation obtained by using effective mass approximation including heavy and light hole energy split at the Γ point.

  41. GaInAs/InP MQW and DBR growth for surface emitting lasers by CBE

    T.K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga

    Journal of Crystal Growth　111　(1-4)　1062-1065　1991/05

    Publisher: Elsevier BV

    DOI： 10.1016/0022-0248(91)91133-u 　

    ISSN： 0022-0248

  42. GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy

    Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Fumio Koyama Fumio Koyama, Kenichi Iga Kenichi Iga

    Japanese Journal of Applied Physics　30　(2B)　L228-L228　1991/02/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.30.l228 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    Ga x In1-x As/InP (0.2≤x≤0.47) quantum wells were grown by chemical beam epitaxy. The thinnest well of two monolayers was obtained and confirmed by transmission electron microscope. Room temperature photoluminescence emission was observed from two-monolayer quantum wells which peaked at 1.0 µm. Strained quantum wells were grown with successive well thickness from 9 Å to 60 Å. By optimizing the growth sequence, we obtained a photoluminescence linewidth of 15 meV from 20 Å to 60 Å wells at 77 K.

  43. CBE growth of GaInAs/InP wafers for surface emitting lasers

    Toshi K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga

    Journal of Crystal Growth　107　(1-4)　1055-1056　1991/01

    Publisher: Elsevier BV

    DOI： 10.1016/0022-0248(91)90608-8 　

    ISSN： 0022-0248

  44. Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy

    Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Fumio Koyama, Kenichi Iga

    Japanese Journal of Applied Physics　29　(12A)　L2146-L2146　1990/12/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.29.l2146 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    Beryllium-doped GaInAs layers were grown on InP by chemical beam epitaxy and were electrically characterized. A hole concentration of as high as 2×1020 cm-3 at a growth temperature of 540°C was obtained without degrading the surface morphology. Highly doped growth was possible without changing any growth parameter. Hole concentrations were also investigated at different growth temperatures for a given Be cell temperature. Hole concentrations were found to increase with decreasing growth temperatures. Furthermore, we did not observe lattice mismatch (Δ a/a<3×10-4) for any of the doped samples grown under the same growth condition as for undoped samples.

  45. Cracking Yield Dependence of InP Growth by Chemical Beam Epitaxy

    Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Kazuaki Mise, Fumio Koyama, Kenichi Iga

    Japanese Journal of Applied Physics　29　(10A)　L1738-L1738　1990/10/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.29.l1738 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    A high P2-yield cracking cell was newly developed for chemical beam epitaxy. Dramatic improvements in crystal quality were obtained in comparison to a lesser-yield cell. The use of tantalum baffles in a PBN-made cell significantly increased the P2 yield when comparing it to a cell using PBN baffles. The growth mechanism of InP differed from cells with different P2 yields. For the same PH3 and TMI flow rates, higher growth rates and narrower photoluminescence linewidths were obtained with a higher P2 yield cell. Silicon and beryllium doping incorporation mechanisms were also found to be different with these cells.

  46. Growth of Ga0.47In0.53As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)

    Takashi Uchida, Toshi K. Uchida, Kazuaki Mise, Noriyuki Yokouchi, Fumio Koyama, Kenichi Iga

    Japanese Journal of Applied Physics　29　(9R)　1771-1771　1990/09/01

    Publisher: IOP Publishing

    DOI： 10.1143/jjap.29.1771 　

    ISSN： 0021-4922

    eISSN： 1347-4065

    More details Close

    GaInAs/InP wafers with a thick active layer (0.5-2.0 µm) were grown by chemical beam epitaxy (CBE). Stripe-contact lasers were fabricated to evaluate these wafers. The lowest normalized threshold current density obtained was 7.9 kA/cm2·µm for devices with a 2.0 µm thick active layer. This value is almost acceptable for application to surface emitting lasers.

  47. Estimation of tunable wavelength range in surface emitting laser using intra-cavity quantum-well tuner Peer-reviewed

    N. Yokouchi, F. Koyama, K. Iga

    Trans IEICE of Japan　E73　1473-1475　1990

Show all ︎Show first 5

Misc. 137

  1. ＜光半導体技術の基礎＞ ひずみ量子井戸光半導体

    横内則之

    応用物理　74　(9)　1238-1241　2005/09

  2. Lateral mode control of vertical-cavity surface-emitting lasers using two-dimensional photonic crystal structure

    Noriyuki Yokouchi, Aaron J. Danner, Kent D. Choquette

    SPIE Proceedings　4994　216-216　2003/06/19

    Publisher: SPIE

    DOI： 10.1117/12.479514 　

    ISSN： 0277-786X

  3. Development of 850-nm VCSELs for high-speed interconnection systems

    Noriyuki Yokouchi, Norihiro Iwai, Akihiko Kasukawa

    SPIE Proceedings　4994　189-189　2003/06/19

    Publisher: SPIE

    DOI： 10.1117/12.480373 　

    ISSN： 0277-786X

  4. Vertical cavity surface emitting lasers laterally confined by 2-dimensional photonic crystals

    N. Yokouchi, A. Danner, K.D. Choquette

    IEEE/LEOS Summer Topical Meeting / All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and Microcavity Lasers.　TuP2-43　2002/07

    Publisher: IEEE

    DOI： 10.1109/leosst.2002.1027615 　

  5. High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers

    Noriyuki Yokouchi, Akihiko Kasukawa

    SPIE Proceedings　3001　378-378　1997/05/02

    Publisher: SPIE

    DOI： 10.1117/12.273808 　

    ISSN： 0277-786X

  6. Low threshold 1.3 μm-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure

    N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

    LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings　1　284-285　1995/11

    Publisher: IEEE

    DOI： 10.1109/leos.1995.484871 　

  7. 面発光レーザーと光機能デバイスの集積化

    横内則之, 伊賀健一

    光学　22　(8)　467-468　1993/08

  8. Loss and index change in GaInAsP/InP multiple quantum well QCSE tuning element for surface emitting lasers

    N. Yokouchi, T. Uchida, T. Miyamoto, Y. Inaba, K. Mori, F. Koyama, K. Iga

    1993 (5th) International Conference on Indium Phosphide and Related Materials　675-678　1993/04

    Publisher: IEEE

    DOI： 10.1109/iciprm.1993.380604 　

  9. GaInAsP/InP Surface Emitting Laser Grown by CBE and Wavelength Tuning Employing External Reflector

    N. YOKOUCHI, T. MIYAMOTO, T. UCHIDA, Y. INABA, F. KOYAMA, K. IGA

    Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials　1992/08

    Publisher: The Japan Society of Applied Physics

    DOI： 10.7567/ssdm.1992.b-6-4 　

  10. 1.3μm帯タイプII量子井戸構造のしきい値レスオージェ再結合係数（２）

    横内 則之, ニャカシュ ペーテル, 肖 何, 今村 明博

    2026年第87回応用物理学会秋季学術講演会　11a-S5-7　2026/09

  11. Design and Evaluation of AlGaInAs/GaInAsP “VVV” Type-II Quantum Wells for 1.3 μm Laser Emission Peer-reviewed

    A. Imamura, N. Hojo, T. Ysohida, H. Xiao, N. Yokouchi

    The 30th International Semiconductor Laser Conference (ISLC 2026)　WeA4　2026/06

  12. Numerical Simulation of Thresholdless CHCC Auger Recombination in Type-II Quantum Wells Peer-reviewed

    Peter Nyakas, Zsolt Puskas, Noriyuki Yokouchi, Akihiro Imamura, He Xiao, Takuma Yoshida

    Compound Semiconductor Week 2026　MoD4-02　2026/05

  13. 1.3μm帯タイプII量子井戸構造のしきい値レスオージェ再結合係数

    横内則之, Peter Nyakas, 今村明博, 肖 何, 吉田琢真

    2026年第73回応用物理学会春季学術講演会　16a-W9_326-2　2026/03

  14. AlGaInAs/GaInAsP VVVタイプII量子井戸による1.3μm帯レーザ発振

    今村明博, 北条直也, 吉田琢真, 肖 何, 横内則之

    2026年電子情報通信学会総合大会　C-3_C-4-34　2026/03

  15. Dynamic characterization of output power fluctuations in FBG stabilized 14xx-nm GaInAsP/InP laser modules

    T. Kokawa, J. Yoshida, N. Yokouchi

    The 25th International Semiconductor Laser Conference　WE18　2016/09

  16. Stabilization of 14xx-nm high power semiconductor laser by single fiber Bragg grting configuration

    H. Hasegawa, T. Sawamura, J. Yoshida, N. Yokouchi

    21st Optoelectronic and Communications Conference / International Conference on Photonics in Switching 2016　WD3-4　2016/07

  17. Lasing Stability of High power 14xx-nm Pump Lasers for Raman Amplifiers

    J. Yoshida, T. Sawamura, M. Miura, S. Irino, H. Itoh, M. Terada, T. Okada, H. Hasegawa, N. Yokouchi

    Optical Fiber Communication Conference　W2A.4-W2A.4　2016/03

    Publisher: OSA

    DOI： 10.1364/ofc.2016.w2a.4 　

  18. High power operation at high temperature of AlGaInAs/InP widely tunable BH laser

    M.Wakaba, N. Iwai, K. Kiyota, H. Hasegawa, T. Kurobe, G. Kobayashi, E. Kaji, M. Kobayakawa, T. Kimoto, N. Yokouchi, A. Kasukawa

    18th OptoElectronics and Communications Conference / 2013 International Conference on Photonics in Switching　MK2-4　2013/06

  19. 1550nm AlGaInAs埋込構造を有するDFBアレイ集積型波長可変光源

    岩井則広, 若葉昌布, 小早川将子, 清田和明, 黒部立郎, 小林 剛, 木本竜也, 向原智一, 横内則之, 粕川秋彦

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 2012-133　2012/12

  20. 1550 nm AlGaInAs/InP widely tunable BH laser based on arrayed DFB

    N. Iwai, M. Wakaba, M. Kobayakawa, K. Kiyota, T. Kurobe, G. Kobayashi, T. Kimoto, S. Tamura, T. Mukaihara, N. Yokouchi, H. Ishii, A. Kasukawa

    ISLC 2012 International Semiconductor Laser Conference　38-39　2012/10

    Publisher: IEEE

    DOI： 10.1109/islc.2012.6348323 　

  21. 1.55μm AlGaInAs埋込構造を有するDFBアレイ集積型波長可変光源

    若葉昌布, 岩井則広, 小早川将子, 清田和明, 黒部立郎, 小林 剛, 木本竜也, 向原智一, 横内則之, 粕川秋彦

    2012年電子情報通信学会ソサイエティ大会　C-4-17　2012/09

  22. Semiconductor optical amplifier with polarization diversity for optical interconnect

    Takeshi Akutsu, Kazutaka Nara, Hideaki Hasegawa, Masaki Funabashi, Noriyuki Yokouchi

    2012 Optical Interconnects Conference　78-79　2012/05

    Publisher: IEEE

    DOI： 10.1109/oic.2012.6224438 　

  23. PLC偏波ダイバーシティ回路を用いたUターン型半導体光増幅器の偏波無依存動作

    長谷川英明, 舟橋政樹, 丸山一臣, 阿久津剛史, 横内則之, 奈良一孝

    電子情報通信学会光エレクトロニクス研究会　OPE 2011-126　2011/10

  24. 低偏波依存利得SOA-PLCハイブリッド集積デバイス

    阿久津剛史, 舟橋政樹, 長谷川英明, 横内則之, 奈良一孝

    2011年電子情報通信学会ソサイエティ大会　C-3-11　2011/09

  25. Polarization independent operation of U-turn shape semiconductor optical amplifier by using PLC-based polarization diversity circuit

    H. Hasegawa, M. Funabashi, K. Maruyama, T. Akutsu, N. Yokouchi, K. Nara

    the 37th European Conference on Optical Communication　We.10.P1.30　2011/09

  26. Hybrid Integration of Semiconductor Optical Amplifier and Silica-based Planar Lightwave Circuit for Low Polarization Dependent Gain

    Takeshi Akutsu, Masaki Funabashi, Hideaki Hasegawa, Noriyuki Yokouchi, Kazutaka Nara

    Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2011　OWZ2-OWZ2　2011/03

    Publisher: OSA

    DOI： 10.1364/ofc.2011.owz2 　

  27. 低雑音半導体光増幅器

    長谷川英明, 舟橋政樹, 丸山一臣, 清田和明, 横内則之

    2010年電子情報通信学会ソサイエティ大会　C-4-7　2010/09

  28. Hybrid integration of U-turn layour semiconductor waveguide and silica-based planar lightwave circuit

    T. Akutsu, J. Hasegawa, M. Funabashi, H. Hasegawa, N. Yokouchi, K. Nara

    15th OptoElectronics and Communications Conference (OECC2010)　9E4-2　2010/07

  29. Design and fabrication of semiconductor optical amplifier with low noise figure

    H. Hasegawa, M. Funabashi, N. Yokouchi, K. Kiyota, K. Maruyama

    15th OptoElectronics and Communications Conference (OECC2010)　7D2-3　2010/07

  30. Uターン型InP-PLCハイブリッドデバイスの結合損失と反射減衰量の低減

    阿久津剛史, 長谷川淳一, 舟橋政樹, 長谷川英明, 横内則之, 奈良一孝

    2010年電子情報通信学会総合大会　C-3-48　2010/03

  31. 低結合損失Uターン型InP-PLCハイブリッド光集積デバイス

    阿久津剛史, 長谷川淳一, 舟橋政樹, 長谷川英明, 横内則之, 奈良一孝

    2009年電子情報通信学会総合大会　C-3-43　2009/03

  32. アクティブ調芯による8チャネルPLC-DFB-LDハイブリッド集積モジュールの作製

    阿久津剛史, 長谷川淳一, 奈良一孝, 舟橋政樹, 長谷川英明, 横内則之

    電子情報通信学会光ファイバ応用技術研究会　OFT 2008-86　2009/01

  33. ［新刊紹介］「発光と受光の物理と応用」

    横内則之

    NEW GLASS　23　(3)　82-84　2008/09

  34. アクティブ調芯による8チャネルPLC-DFB-LDハイブリッド集積モジュールの作製

    阿久津剛史, 長谷川淳一, 舟橋政樹, 長谷川英明, 横内則之, 奈良一孝

    2008年電子情報通信学会ソサイエティ大会　C-3-5　2008/09

  35. Numerical optimization of single-mode photonic crystal VCSELs

    Peter Nyakas, Tomofumi Kise, Tamas Karpati, Noriyuki Yokouchi

    2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)　93-94　2008/09

    Publisher: IEEE

    DOI： 10.1109/nusod.2008.4668258 　

  36. Fabrication of 8 ch DFB-LD-PLC hybrid integrated module with active alignment optical connection

    Takeshi Akutsu, Junichi Hasegawa, Masaki Funabashi, Hideaki Hasegawa, Noriyuki Yokouchi, Kazutaka Nara

    OECC/ACOFT 2008 - Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference on Optical Fibre Technology　1-2　2008/07

    Publisher: IEEE

    DOI： 10.1109/oeccacoft.2008.4610631 　

  37. 全半導体フォトニック結晶アクティブ導波路の光励起入出力特性(III) 低群速度の確認と信号強度の増大

    仲田丈晴, 渡邊秀輝, 馬場俊彦, 清田和明, 喜瀬智文, 横内則之

    第55回応用物理学関係連合講演会　27p-ZX-12　2008/03

  38. Thermal lens effect on single-transverse-mode stability of proton-implanted photonic-crystal vertical-cavity surface-emitting lasers

    T. Kise, P. Nyakas, K. Maruyama, K. Kiyota, N. Yokouchi

    LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings　634-635　2007/10

    Publisher: IEEE

    DOI： 10.1109/leos.2007.4382566 　

    ISSN： 1092-8081

  39. 水素イオンインプラ型フォトニック結晶VCSELの単一横モード性解析

    喜瀬智文, ニャカシュペーテル, 丸山一臣, 清田和明, 横内則之

    第68回応用物理学会学術講演会　8a-C-4　2007/09

  40. 全半導体フォトニック結晶アクティブ導波路の電流注入光入出力特性

    渡邊秀輝, 清田和明, 仲田丈晴, 馬場俊彦, 喜瀬智文, 横内則之

    第68回応用物理学会学術講演会　6a-P9-15　2007/09

  41. 水素イオンインプラ型フォトニック結晶面発光レーザの横モード安定性

    喜瀬智文, 清田和明, 丸山一臣, 横内則之, ニャカシュペーテル, 橋詰直樹

    第54回応用物理学関係連合講演会　29a-SG-6　2007/03

  42. 全半導体フォトニック結晶アクティブ導波路の光励起入出力特性（Ⅱ）利得の調査

    水田栄一, 渡邊秀輝, 馬場俊彦, 清田和明, 喜瀬智文, 横内則之

    第53回応用物理学関係連合講演会　23p-L-4　2006/03

  43. 多層化量子ドットレーザのドット密度依存性

    清水均, Saravanan Shanmugam, 吉田順自, 井部紗代子, 横内則之

    第53回応用物理学関係連合講演会　22a-ZN-1　2006/03

  44. 長波長帯多層化量子ドットレーザの低閾値電流密度発振

    清水 均, Shanmugam Saravanan, 吉田順自, 井部紗代子, 横内則之

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE2005-124　2005/12

  45. Demonstration of various low group velocity effects in photonic crystal line defect waveguides by laser oscillation

    K. Kiyota, T. Kise, N. Yokouchi, T. Ide, T. Baba

    2005 IEEE LEOS Annual Meeting Conference Proceedings　335-336　2005/10

    Publisher: IEEE

    DOI： 10.1109/leos.2005.1548007 　

  46. フォトニック結晶線欠陥導波路における様々な低群速度効果のレーザ発振による検証

    清田和明, 喜瀬智文, 横内則之, 井出利英, 馬場俊彦

    第66回応用物理学会学術講演会　9p-H-7　2005/09

  47. 全半導体フォトニック結晶アクティブ導波路の光励起入出力特性

    水田栄一, 渡邊秀輝, 志賀正浩, 馬場俊彦, 喜瀬智文, 清田和明, 横内則之

    第66回応用物理学会学術講演会　9p-H-3　2005/09

  48. 低しきい値電流密度多層化量子ドットレーザ

    清水均, Saravanan Shanmugam, 吉田順自, 井部紗代子, 横内則之

    第66回応用物理学会学術講演会　7p-ZN-17　2005/09

  49. Characterization of Photonic Crystal Waveguide for SOA Operation

    E. Mizuta, T. Ide, J. Hashimoto, K. Nozaki, T. Baba, T. Kise, K. Kiyota, N. Yokouchi

    2005 Pacific Rim Conference on Lasers & Electro-Optics　1134-1135　2005/07

    Publisher: IEEE

    DOI： 10.1109/cleopr.2005.1569682 　

  50. Wide temperature operation of 850-nm VCSEL and isolator-free operation of 1300-nm VCSEL for a variety of applications

    Kevin Nishikata, Maiko Ariga, Norihiro Iwai, Yoshihiko Ikenaga, Casimirus Setiagung, Takeo Kageyama, Hitoshi Shimizu, Noriyuki Yokouchi, Akihiko Kasukawa, Fumio Koyama

    SPIE Proceedings　5737　8-8　2005/03/14

    Publisher: SPIE

    DOI： 10.1117/12.601830 　

    ISSN： 0277-786X

  51. フォトニック結晶VCSELの研究動向と今後の展開

    横内則之, ケント D.ショケット

    第51回応用物理学関係連合講演会　28a-ZM-4　2004/03

  52. Coherently coupled photonic crystal VCSELs

    A.J. Danner, J.C. Lee, J.J. Raftrey, N. Yokouchi, K.D. Choquette

    The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.　2　577-578　2003/10

    Publisher: IEEE

    DOI： 10.1109/leos.2003.1252931 　

  53. ２次元フォトニック・クリスタルを用いた垂直共振器面発光レーザ Invited

    横内則之, ケントショケット

    電子情報通信学会2003年ソサイエティ大会　SC-1-10　2003/09

  54. Scaling of small-aperture photonic crystal vertical cavity lasers

    A.J. Danner, J.J. Raftery, Jr, U. Krishnamachari, J.C. Lee, N. Yokouchi, K.D. Choquette

    2003 Conf. on Lasers and Electro-Optics (CLEO 2003)　PDP　2003/06

  55. Single mode photonic crystal vertical cavity lasers incorporating etch depth dependence

    A.J. Danner, N. Yokouchi, K.D. Choquette

    2003 Conf. on Lasers and Electro-Optics (CLEO 2003)　CThP3　2003/06

  56. Focused ion beam post-processing for single mode photonic crystal vertical cavity surface-emitting lasers

    A.J. Danner, N. Yokouchi, J.J. Raftery, K.D. Choquette

    61st Device Research Conference. Conference Digest (Cat. No.03TH8663)　155-156　2003/06

    Publisher: IEEE

    DOI： 10.1109/drc.2003.1226913 　

  57. 850nm VCSELs for 10Gb/s operation Invited

    N. Iwai, N. Yokouchi, A. Kasukawa

    IEEE/LEOS Summer Topical Meeting / All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and Microcavity Lasers.　WC2-56　2002/07

    Publisher: IEEE

    DOI： 10.1109/leosst.2002.1027622 　

  58. 半導体アパーチャ構造による850nm酸化型VCSELのシングルモード化

    植田菜摘, 岩井則広, 有賀麻衣子, 濱 威, 品川達志, 椎名泰一, 内山誠治, 横内則之, 粕川秋彦

    第49回応用物理学関係連合講演会　28a-YQ-16　2002/03

  59. 850nm酸化型VCSELにおける横モード制御および温度特性向上

    植田 菜摘, 橘 正人, 岩井則広, 品川 達志, 有賀麻衣子, 佐々木康真, 横内則之, 椎名泰一, 粕川秋彦

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 2001-137　2002/02

  60. 面発光レーザーの光LAN応用と研究開発状況

    横内則之

    レーザー研究　29　779-783　2001/12

  61. 10 Gbps operation of TO-can packaged 850 nm oxide confined VCSEL

    M. Ariga, N. Iwai, N. Ueda, S. Uchiyama, Y. Sasaki, Y. Shiina, T. Shinagawa, T. Hama, T. Nomura, N. Yokouchi, A. Kasukawa

    LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)　2　726-727　2001/11

    Publisher: IEEE

    DOI： 10.1109/leos.2001.969020 　

  62. Transverse mode control of vertical cavity surface emitting lasers Invited

    N. Yokouchi, A. Kasukawa

    Asia-Pacific Radio Science Conference　2001/08

  63. p-substrate VCSEL array for passive-aligned module

    S. Uchiyama, N. Yokouchi, M. Iwase, T. Hama, Y. Shiina

    OptoElectronics and Communications Conference (OECC 2001) / Int'l Conference on Integrated Optics and Optical Fibre Communication (IOOC 2001)　2001/07

  64. Improvement of temperature characteristic in 850nm oxide confined VCSEL using AlAs/Al0.2Ga0.8As DBR

    N. Ueda, M. Tachibana, N. Iwai, T. Shinagawa, Y. Sasaki, M. Ariga, T. Hama, S. Uchiyama, Y. Shiina, N. Yokouchi, A. Kasukawa

    OptoElectronics and Communications Conference (OECC 2001) / Int'l Conference on Integrated Optics and Optical Fibre Communication (IOOC 2001)　ThH4　2001/07

  65. Transverse mode control of oxide confined multimode VCSEL by dielectric aperture

    N. Yokouchi, N. Ueda, T. Shinagawa, N. Iwai, Y. Sasaki, M. Ariga, S. Uchiyama, Y. Shiina, A. Kasukawa

    The 4th Pacific Rim Conference on Lasers and Electro Optics　ThC1-2　2001/07

  66. VCSELアレーにおける熱的クロストーク

    有賀麻衣子, 橘 正人, 岩井則広, 植田菜摘, 内山誠治, 佐々木康真, 椎名泰一, 品川達志, 濱 威, 横内則之, 粕川秋彦

    第48回応用物理学関係連合講演会　29p-ZT-6　2001/03

  67. 誘電体アパーチャによる酸化型VCSELの横モード制御

    植田菜摘, 横内則之, 岩井則広, 品川達志, 佐々木康真, 有賀麻衣子, 濱 威, 内山誠治, 椎名泰一, 粕川秋彦

    第48回応用物理学関係連合講演会　29p-ZT-1　2001/03

  68. 980nm p基板面発光レーザ

    内山誠治, 横内則之, 岩瀬正幸, 椎名泰一, 南野正幸

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 2000-121　2001/02

  69. パッシブアライメント980nmVCSELアレーモジュール

    内山誠治, 横内則之, 岩瀬正幸, 南野正幸, 椎名泰一

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 99-130　2000/02

  70. 1.3 μm InAsP-GaInAsP-InGaP strain-compensated MQW lasers grown by GSMBE

    K. Saito, H. Shimizu, K. Kumada, N. Yamanaka, T. Mukaihara, N. Yokouchi, A. Kasukawa

    Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)　75-78　1999/05

    Publisher: IEEE

    DOI： 10.1109/iciprm.1999.773638 　

  71. GaInAsP/InP光減衰器集積導波路型受光素子

    吉田順自, 横内則之, 山中信光, 山口武治

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 98-41　1998/07

  72. GaInAsP/InP attenuator integrated waveguide photodetector (AIPD) based on the Franz-Keldysh effect

    N. Yokouchi, J. Yoshida, N. Yamanaka, T. Yamaguchi, K. Nishikata

    Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)　269-272　1998/05

    Publisher: IEEE

    DOI： 10.1109/iciprm.1998.712454 　

  73. 1.3μm帯InAsP/GaInAsP/InGaP歪補償MQWレーザ

    齋藤 要, 清水 均, 熊田浩仁, 山中信光, 横内則之, 粕川秋彦

    第46回応用物理学関係連合講演会　28a-B-6　1998/03

  74. GSMBE法による1.3µm帯InAsP MQWレーザ

    清水 均, 熊田浩仁, 吉田順自, 横内則之, 粕川秋彦

    第58回応用物理学会学術講演会　2p-ZC-13　1997/10

  75. 光減衰器集積導波路型受光素子の感度可変動作の検証

    吉田順自, 横内則之, 山中信光, 山口武治, 西片一昭

    第45回応用物理学関係連合講演会　29p-ZL-6　1997/03

  76. 直接接着法によるGaAs基板上の波長1.3µm レーザ

    岩井則広, 山中信光, 横内則之, 西片一昭, 粕川秋彦

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 96-114　1996/12

  77. 1.3µm GaInAsP/InP歪量子井戸面発光レーザ

    内山誠治, 横内則之, 二ノ宮隆夫

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 96-81　1996/10

  78. 1.3µm帯GaInAsP/InP引張歪量子井戸レーザの相対強度雑音

    横内則之, 中平好則, 山中信光, 岩井則広, 粕川秋彦

    第57回応用物理学会学術講演会　9p-KH-7　1996/09

  79. 直接接着法により製作したInGaPクラッド層を有する波長1.3µm歪量子井戸レーザ

    岩井則広, 山中信光, 大久保典雄, 横内則之, 西片一昭, 粕川秋彦

    第57回応用物理学会学術講演会　8p-KH-5　1996/09

  80. Continuous-Wave Operation up to 36°C of GaInAsP/InP Strained-Layer Multi-Quantum-Wells Surface-Emitting Laser

    S. Uchiyama, N. Yokouchi, T. Ninomiya

    Conference on Lasers and Electro-Optics Europe　CMC1-CMC1　1996/09

    Publisher: Optica Publishing Group

    DOI： 10.1364/cleo_europe.1996.cmc1 　

    More details Close

    A 1.3-μm GaInAsP/InP surface emitting (SE) laser has wide application in optical communication and optical inter-connections. Previously, we improved a buried heterostructure for GaInAsP/InP SE laser regrown by metalorganic chemical vapor deposition (MOCVD)[1] and introduced Si/Al2O3 layer, which has a higher thermal conductivity than Si/SiO2 layer, into p-side mirror of 1.3-μm SE laser 12] and demonstrated 1.3-μm SE lasers with a bulk active layer. A low threshold room-temperature pulsed operation (Ith= 12mA) and a continuous-wave (CW) operation up to 13 °C were obtained[2]. Recently, the room-temperature CW operation of 1.5-μm SE laser with strained-layer multi-quantum-wells (SL-MQW) was reported [3]. To get better performances of a 1.3-μm SE laser, it is considered to be important to introduce a SL-MQW into its active layer. In this study, we have demonstrated a 1.3-μm GaInAsP/InP SL-MQW SE laser and have achieved CW operation up to 36°C, which is the highest CW operating temperature for long-wavelength SE laser.

  81. Structural dependence of 1.3µm narrow beam lasers fabricated by selective MOCVD

    A. Kasukawa, N. Yamanaka, N. Iwai, N. Yokouchi

    First International Conference on Optoelectronics and Communications Conference　19D2-2　1996/07

  82. Low threshold current 1.3µm GaInAsP SL-MQW ridge waveguide lasers on GaAs substrate using wafer fusion

    N. Iwai, N. Yamanaka, N. Yokouchi, A. Kasukawa

    First International Conference on Optoelectronics and Communications Conference　18D4-5　1996/07

  83. Low threshold and low power consumption 1.3µm strained-layer quantum well lasers

    A. Kasukawa, N. Yokouchi

    First International Conference on Optoelectronics and Communications Conference　18D4-1　1996/07

  84. Relative intensity noise of 1.3µm-GaInAsP/InP tensile-strained multiple quantum well lasers

    N. Yokouchi, Y. Nakahira, N. Yamanaka, N. Iwai, A. Kasukawa

    First International Conference on Optoelectronics and Communications Conference　18D4-4　1996/07

  85. 1 mA-threshold operation of 1.3 μm tensile-strained GaInAsP/InP MQW lasers

    N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

    Proceedings of 8th International Conference on Indium Phosphide and Related Materials　388-391　1996/04

    Publisher: IEEE

    DOI： 10.1109/iciprm.1996.492264 　

  86. MOCVDの選択成長により製作した狭出射ビームレーザの構造パラメータ依存性

    山中信光, 横内則之, 岩井則広, 粕川秋彦

    第43回応用物理学関係連合講演会　27p-C-18　1996/03

  87. 1.3µm帯GaInAsP/InP引張歪量子井戸レーザの低しきい値・高温動作

    横内則之, 山中信光, 岩井則広, 粕川秋彦

    第43回応用物理学関係連合講演会　27p-C-8　1996/03

  88. 直接接着法を用いたGaAs基板上の波長1.3µm低しきい値歪量子井戸レーザ

    岩井則広, 山中信光, 横内則之, 粕川秋彦

    第43回応用物理学関係連合講演会　27p-C-5　1996/03

  89. 1.3µm GaInAsP/InP歪MQW面発光レーザの室温CW発振

    内山誠治, 横内則之, 二ノ宮隆夫

    第43回応用物理学関係連合講演会　26p-C-7　1996/03

  90. 1.3µm GaInAsP/InP面発光レーザ

    内山誠治, 横内則之, 二ノ宮隆夫

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 95-111　1995/12

  91. 1.3µm帯GaInAsP/InP引張歪量子井戸レーザ

    横内則之, 山中信光, 岩井則広, 粕川秋彦

    電子情報通信学会　LQE 95-89　1995/10

  92. TDR反射鏡を用いた波長1.3µm高温特歪量子井戸レーザ

    岩井則広, 山中信光, 横内則之, 粕川秋彦

    電子情報通信学会レーザ・量子エレクトロニクス研究会　LQE 95-55　1995/09

  93. 1.3µm帯GaInAsP/InP引張歪量子井戸レーザの埋め込み構造による低しきい値化

    横内則之, 山中信光, 岩井則広, 粕川秋彦

    第56回応用物理学会学術講演会　27a-ZA-5　1995/08

  94. 1.3µm帯GaInAsP/InP SBH面発光レーザ (2)

    内山誠治, 横内則之, 二ノ宮隆夫

    第56回応用物理学会学術講演会　26a-ZA-6　1995/08

  95. Very low threshold current density 1.3µm InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers

    A. Kasukawa, N. Yokouchi, N. Yamanaka, N. Iwai

    22nd International Symposium on Compound Semiconductors, ISCS-22　FrA4-4　1995/08

  96. Low-threshold-current-density operation of 1.3-µm GaInAsP/InP tensile-strained quantum-well lasers

    N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

    Conference on Lasers and Electro-Optics, CLEO '95　CTuL1　1995/05

  97. InAsP/InGaP all ternary strain-compensated multiple quantum wells and its application to long wavelength lasers

    N. Yokouchi, N. Yamanaka, N. Iwai, T. Matsuda, A. Kasukawa

    Seventh International Conference on Indium Phosphide and Related Materials　57-60　1995/05

    Publisher: IEEE

    DOI： 10.1109/iciprm.1995.522075 　

  98. MOCVD growth and characterization of tensile-strained GaxIn1-xAsyP1-y quantum wells for low threshold lasers emitting at 1.3 μm

    N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

    Seventh International Conference on Indium Phosphide and Related Materials　18-21　1995/05

    Publisher: IEEE

    DOI： 10.1109/iciprm.1995.522065 　

  99. InAsP/InGaP歪補償量子井戸構造と長波長レーザへの応用

    山中信光, 横内則之, 岩井則広, 粕川秋彦

    第42回応用物理学関係連合講演会　30a-SZY-10　1995/03

  100. 1.3µm帯GaInAsP/InP引張歪量子井戸レーザの検討

    横内則之, 山中信光, 岩井則広, 粕川秋彦

    第42回応用物理学関係連合講演会　29p-ZG-3　1995/03

  101. p型GaInAsP/InP半導体多層膜反射鏡における電気的特性について

    宮本智之, 森健一, 前川博昭, 稲葉雄一, 横内則之, 小山二三夫, 伊賀健一

    第41回応用物理学関連連合講演会　31a-K-7　1994/03

  102. GaInAsP/InP MQB装荷レーザにおけるホール注入の検討

    稲葉雄一, 羅徳厚, 横内則之, 宮本智之, 森健一, 小山二三夫, 伊賀健一

    第41回応用物理学関連連合講演会　30a-K-6　1994/03

  103. Band discontinuity reduction of i-GaInAsP/p-InP for improving 1.55 μm GaInAsP/InP surface emitting laser performances

    K. Mori, T. Miyamoto, N. Yokouchi, Y. Inaba, F. Koyama, K. Iga

    Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)　311-314　1994/03

    Publisher: IEEE

    DOI： 10.1109/iciprm.1994.328232 　

  104. CBE法によるGaxIn1-xAs/InP量子井戸構造におけるIII族組成の変化

    横内則之, 宮本智之, 稲葉雄一, 森健一, 小山二三夫, 伊賀健一

    第54回応用物理学会学術講演会　28a-ZS-3　1993/09

  105. CBE法によるGaInAs(P)/InP多重量子障壁(MQB)の成長(II)

    稲葉雄一, 横内則之, 宮本智之, 森健一, 小山二三夫, 伊賀健一

    第54回応用物理学会学術講演会　28a-ZS-2　1993/09

  106. 1.55µm帯GaInAsP/InP面発光レーザの活性層 pクラッド界面の影響

    森健一, 宮本智之, 横内則之, 稲葉雄一, 小山二三夫, 伊賀健一

    第54回応用物理学会学術講演会　27a-H-5　1993/09

  107. Growth of GaInAs(P)/InP multi-quantum barrier (MQB) by chemical beam epitaxy

    Y. Inaba, T. Uchida, N. Yokouchi, T. Miyamoto, K. Mori, F. Koyama, K. Iga

    The 4th Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques　VIII-18　1993/07

  108. Composition changes in GaxIn1-xAs/InP super-lattice growth by chemical beam epitaxy

    N. Yokouchi, Y. Inaba, T. Uchida, T. Miyamoto, K. Mori, F. Koyama, and K. Iga

    The 4th Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques　VIII-17　1993/07

  109. A Study On Gain-resonance Matching Of CBE Grown λ=1.5 μm Surface Emitting Lasers

    T. Miyamoto, T. Uchida, N. Yokouchi, Y. Inaba, F. Koyama, K. I'ga

    LEOS '92 Conference Proceedings　542-543　1993/05

    Publisher: IEEE

    DOI： 10.1109/leos.1992.694084 　

  110. 面発光レーザとその集積化

    横内則之, 伊賀健一

    1993年電子情報通信学会春季大会　SC-2-2　1993/03

  111. CBE法によるGaInAsP/InP面発光レーザII

    宮本智之, 内田貴司, 横内則之, 稲葉雄一, 森健一, 小山二三夫, 伊賀健一

    第40回応用物理学関連連合講演会　29a-C-11　1993/03

  112. A Study On Gain-resonance Matching Of CBE Grown λ=1.5 μm Surface Emitting Lasers

    T. Miyamoto, T. Uchida, N. Yokouchi, Y. Inaba, F. Koyama, K. I'ga

    LEOS '92 Conference Proceedings　542-543　1992/11

    Publisher: IEEE

    DOI： 10.1109/leos.1992.694084 　

  113. 化学ビーム成長(CBE)法によるGaInAsP/InP面発光レーザ

    内田貴司, 横内則之, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一

    1992年電子情報通信学会秋季大会　C-164　1992/09

  114. 外部鏡によるGaInAsP/InP面発光レーザの連続波長チューニング

    横内則之, 内田貴司, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一

    1992年電子情報通信学会秋季大会　C-157　1992/09

  115. CBE成長によるGaInAsP/InP多重量子障壁(MQB)の製作

    稲葉雄一, 内田貴司, 横内則之, 宮本智之, 小山二三夫, 伊賀健一

    第53回応用物理学会学術講演会　17p-ZF-17　1992/09

  116. CBE成長によるBeドープGaInAsPの光吸収特性

    横内則之, 内田貴司, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一

    第53回応用物理学会学術講演会　17p-ZF-16　1992/09

  117. CBE成長による1.5µm帯面発光レーザの利得-共振器波長の整合

    宮本智之, 内田貴司, 横内則之, 稲葉雄一, 森健一, 小山二三夫, 伊賀健一

    第53回応用物理学会学術講演会　16a-V-7　1992/09

  118. CBE grown 1.5 μm GaInAsP/InP Surface Emitting Lasers

    T. Uchida, T. Miyamoto, N. Yokouchi, Y. Inaba, F. Koyama, K. Iga

    13th IEEE International Semiconductor Laser Conference　212-213　1992/09

    Publisher: IEEE

    DOI： 10.1109/islc.1992.763641 　

  119. 化学ビーム成長（CBE）法によるGaInAsP/InP結晶成長と面発光レーザデバイスへの応用

    内田貴司, 横内則之, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一

    電子情報通信学会光・量子エレクトロニクス研究会　OQE92-45　1992/07

  120. Optical absorption measurement of highly beryllium-doped GaInAsP grown by chemical beam epitaxy

    N. Yokouchi, T. Uchida, T. Miyamoto, Y. Inaba, F. Koyama, K. Iga

    4th Optoelectronics Conference　16D2-20-16D2-20　1992/07

  121. Beryllium doping to InP and GaInAsP by chemical beam epitaxy (CBE)

    T. Uchida, N. Yokouchi, T. Miyamoto, Y. Inaba, F. Koyama, K. Iga

    LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels　113-116　1992/04

    Publisher: IEEE

    DOI： 10.1109/iciprm.1992.235664 　

  122. CBE法によるGaInAsP/InP多層膜反射鏡の成長（Ⅱ）

    内田貴司, 横内則之, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一

    第39回応用物理学関連連合講演会　31p-ZB-5　1992/03

  123. CBE法によるGaInAsP/InP面発光レーザ

    宮本智之, 内田貴司, 横内則之, 稲葉雄一, 小山二三夫, 伊賀健一

    第39回応用物理学関連連合講演会　28a-SF-8　1992/03

  124. GaInAsP/InP面発光レーザウェハのCBE成長

    横内則之, 内田貴司, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一

    第39回応用物理学関連連合講演会　31p-ZB-2　1992/03

  125. CBE法におけるGaInAsPおよびInPへのベリリウムドーピング

    内田貴司, 横内則之, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一

    第52回応用物理学会学術講演会　11p-W-12　1991/09

  126. Photoluminescence characterization of GaxIn1-xAs (0<x<0.32) strained quantum wells grown on InP by chemical beam epitaxy

    T. K. Uchida, T. Miyamoto, T. Uchida, N. Yokouchi, F. Koyama, and K. Iga

    The 3rd Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques　J4　1991/09

  127. Ultra-thin GaxIn1-xAs/InP (0≤x≤0.47) layer growth by chemical beam epitaxy

    N. Yokouchi, T.K. Uchida, T. Uchida, T. Miyamoto, F. Koyama, K. Iga

    [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials　403-406　1991/04

    Publisher: IEEE

    DOI： 10.1109/iciprm.1991.147398 　

  128. CBE法による変調ドープGaInAs/InP SCH量子井戸レーザ構造の成長

    内田貴司, 内田俊一, 横内則之, 宮本智之, 小山二三夫, 伊賀健一

    第38回応用物理学関連連合講演会　30a-SZK-17　1991/03

  129. CBE法によるGaInAs(P)/InP超格子構造の吸収スペクトル

    横内則之, 内田俊一, 小山二三夫, 伊賀健一

    第38回応用物理学関連連合講演会　30a-SZK-16　1991/03

  130. CBE法によるGaInAs/InP多重量子井戸構造と歪超格子の成長

    内田貴司, 内田俊一, 横内則之, 宮本智之, 三瀬一明, 小山二三夫, 伊賀健一

    電子情報通信学会光・量子エレクトロニクス研究会　OQE90-91　1990/10

  131. CBE法によるGaInAs(P)/InP多層膜反射鏡の成長

    内田貴司, 内田俊一, 横内則之, 宮本智之, 小山二三夫, 伊賀健一

    第51回応用物理学会学術講演会　27a-V-8　1990/09

  132. CBE法による高成長速度時におけるGaInAs/InP多重量子井戸の成長

    横内則之, 内田俊一, 内田貴司, 宮本智之, 小山二三夫, 伊賀健一

    第51回応用物理学会学術講演会　27a-V-7　1990/09

  133. GaInAs/InP MQW and DBR growth for surface emitting lasers

    T. K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga

    The 6th Int. Conf. on Molecular Beam Epitaxy　1990/08

  134. CBE growth of GaInAs(P)/InP wafers for surface emitting lasers

    T. K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga

    The 5th Int. Conf. on Metalorganic Vapor Phase Epitaxy　1990/06

  135. CBE法によるGaInAsP/InP面発光レーザ用ウェハのストライプレーザによる評価

    内田貴司, 内田俊一, 三瀬和明, 横内則之, 小山二三夫, 伊賀健一

    第37回応用物理学関連連合講演会　29a-SA-13　1990/03

  136. GaInAs/InP Multi-Quantum Wells and Strained Super-Lattices Grown by Chemical Beam Epitaxy

    Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Kazuaki Mise, Fumio Koyama, Kenichi Iga

    Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials　1990

    Publisher: The Japan Society of Applied Physics

    DOI： 10.7567/ssdm.1990.b-4-5 　

  137. High rate growth of Ga0.47In0.53As/InP by chemical beam epitaxy

    T.K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga

    International Conference on Indium Phosphide and Related Materials　144-147　1990

    Publisher: IEEE

    DOI： 10.1109/iciprm.1990.203005 　

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Books and Other Publications 1

  1. Strained-layer quantum wells and their application

    Manasreh, Mahmoud Omar

    Gordon & Breach　1997

    ISBN: 9056995677