Details of the Researcher

PHOTO

Vu Thi Ngoc Huyen
Section
Institute for Materials Research
Job title
Assistant Professor
Degree

  • 博士（理学）（大阪大学）

  • Ｍ．Ｓ．（ハノイ教育大学）

Research History 5

  • 2024/04 - Present
    Institute for Materials Research, Tohoku University　Assistant Professor

  • 2020/04 - 2024/03
    Institute for Materials Research, Tohoku University

  • 2017/04 - 2020/03
    National Institute for Materials Science　Junior Researcher

  • 2016/10 - 2019/09
    Institute for Scientific and Industrial Research, Osaka University　Research Assistant

  • 2016/02 - 2017/03
    Sumitomo Company　Specially Appointed Researcher

Education 3

  • Graduate school of Engineering Science, Osaka University　Doctor Course

    2016/10 - 2019/09

  • Hanoi National University of Education　Master Course

    2011/09 - 2013/08

  • Hanoi National University of Education　Department of Physics　Bachelor Course

    2007/09 - 2011/05

Research Interests 4

  • First principles of Point defects

  • Spintronic

  • Magnetism

  • Materials Science

Research Areas 3

  • Natural sciences / Semiconductors, optical and atomic physics /

  • Natural sciences / Mathematical physics and basic theory /

  • Natural sciences / Magnetism, superconductivity, and strongly correlated systems /

Awards 7

  1. The excellent poster award on the 142nd IMR Lecture Meeting

    2022　Institute for Materials Research, Tohoku University

  2. The Monbukagakusho Honors Scholarship for Privately-Financed International Students

    2016　Japan Student Services Organization (JASSO)

  3. The Vallet Scholarship for the excellent studying achievements

    2012　The Recontres du Vietnam

  4. The Vallet Scholarship for the excellent studying achievements

    2011　The Recontres du Vietnam

  5. The Vallet Scholarship for the excellent studying achievements

    2010　The Recontres du Vietnam

  6. The First Prize for the experimental competitions in National Student Physics Olympics 13rd

    2010　Vietnam Union of Science and Technology Associations (VUSTA)

  7. The Second Prize for the experimental competitions in National Student Physics Olympics 12nd

    2009　Vietnam Union of Science and Technology Associations (VUSTA)

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Papers 12

  1. Enhanced Field‐Like Torque Generated from the Anisotropic Spin‐Split Effect in Triple‐Domain RuO2 for Energy‐Efficient Spin–Orbit Torque Magnetic Random‐Access Memory

    Thi Van Anh Nguyen, Hiroshi Naganuma, Thi Ngoc Huyen Vu, Samik DuttaGupta, Yoshiaki Saito, Duong Vu, Yasushi Endo, Shoji Ikeda, Tetsuo Endoh

    Advanced Science　2025/04

    DOI： 10.1002/advs.202413165 　

  2. Exploring Intrinsic and Extrinsic p-Type Dopability of Atomically Thin β-TeO2 from First Principles

    Rafael Costa-Amaral, Soungmin Bae, Thi Ngoc Huyen Vu, Yu Kumagai

    ACS Applied Materials & Interfaces　2024/12/26

    Publisher: American Chemical Society (ACS)

    DOI： 10.1021/acsami.4c17868 　

    ISSN： 1944-8244

    eISSN： 1944-8252

  3. Large spontaneous Hall effect with flexible domain control in the antiferromagnetic material TaMnP

    Hisashi Kotegawa, Akira Nakamura, Vu Thi Ngoc Huyen, Yuki Arai, Hideki Tou, Hitoshi Sugawara, Junichi Hayashi, Keiki Takeda, Chihiro Tabata, Koji Kaneko, Katsuaki Kodama, Michi-To Suzuki

    Physical Review B　2024/12/09

    DOI： 10.1103/PhysRevB.110.214417 　

  4. Native defects and p -type dopability in transparent β - TeO2 : A first-principles study

    Vu Thi Ngoc Huyen, Soungmin Bae, Rafael Costa-Amaral, Yu Kumagai

    Physical Review Applied　2024/10/25

    DOI： 10.1103/PhysRevApplied.22.044065 　

  5. Giant impurity effect on anomalous Hall effect of Mn3Sn

    Rikizo Yano, Shunya Kihara, Masayasu Yoneda, Huyen Thi Ngoc Vu, Hiroyuki Suto, Naoyuki Katayama, Takeo Yamaguchi, Makoto Kuwahara, Michi-To Suzuki, Koh Saitoh, Satoshi Kashiwaya

    The Journal of Chemical Physics　2024/05/14

    DOI： 10.1063/5.0195211 　

  6. Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

    Hisashi Kotegawa, Yoshiki Kuwata, Vu Thi Ngoc Huyen, Yuki Arai, Hideki Tou, Masaaki Matsuda, Keiki Takeda, Hitoshi Sugawara, Michi-To Suzuki

    npj Quantum Materials　8　(1)　2023/10/10

    Publisher: Springer Science and Business Media LLC

    DOI： 10.1038/s41535-023-00587-2 　

    ISSN： 2397-4648

    eISSN： 2397-4648

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    Abstract Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of ~230 Ω−1cm−1 originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for the development of controllability of responses in AF materials.

  7. tqix.pis: A toolbox for quantum dynamics simulation of spin ensembles in Dicke basis

    Nguyen Tan Viet, Nguyen Thi Chuong, Vu Thi Ngoc Huyen, Le Bin Ho

    Computer Physics Communications　286　108686-108686　2023/05

    Publisher: Elsevier BV

    DOI： 10.1016/j.cpc.2023.108686 　

    ISSN： 0010-4655

  8. Spin and anomalous Hall effects emerging from topological degeneracy in the Dirac fermion system CuMnAs

    Vu Thi Ngoc Huyen, Yuki Yanagi, Michi-To Suzuki

    Physical Review B　104　(3)　2021/07/06

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevb.104.035110 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  9. Topology analysis for anomalous Hall effect in the noncollinear antiferromagnetic states of Mn(3)AN (A = Ni, Cu, Zn, Ga, Ge, Pd, In, Sn, Ir, Pt)

    Thi Ngoc Huyen Vu

    Physical Review B　100　(9)　2019/09/16

    DOI： 10.1103/PHYSREVB.100.094426 　

    ISSN： 2469-9950 2469-9969

  10. Self-Optimized Biological Channels in Facilitating the Transmembrane Movement of Charged Molecules

    Thi Ngoc Huyen Vu

    Journal of Biophysics　2016　1-10　2016/02/28

    Publisher: Hindawi Limited

    DOI： 10.1155/2016/1657679 　

    ISSN： 1687-8000

    eISSN： 1687-8019

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    We consider an anisotropically two-dimensional diffusion of a charged molecule (particle) through a large biological channel under an external voltage. The channel is modeled as a cylinder of three structure parameters: radius, length, and surface density of negative charges located at the channel interior-lining. These charges induce inside the channel a potential that plays a key role in controlling the particle current through the channel. It was shown that to facilitate the transmembrane particle movement the channel should be reasonably self-optimized so that its potential coincides with the resonant one, resulting in a large particle current across the channel. Observed facilitation appears to be an intrinsic property of biological channels, regardless of the external voltage or the particle concentration gradient. This facilitation is very selective in the sense that a channel of definite structure parameters can facilitate the transmembrane movement of only particles of proper valence at corresponding temperatures. Calculations also show that the modeled channel is nonohmic with the ion conductance which exhibits a resonance at the same channel potential as that identified in the current.

  11. Neutral Current in Reduced Minimal 3-3-1 Model

    Thi Ngoc Huyen Vu

    Communications in Physics　24　(2)　97-97　2014/07/09

    Publisher: Publishing House for Science and Technology, Vietnam Academy of Science and Technology (Publications)

    DOI： 10.15625/0868-3166/24/2/3774 　

    ISSN： 0868-3166

    eISSN： 0868-3166

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    This work is devoted for gauge boson sector of the recentlyproposed model based on \(\mathrm{SU}(3)_C\otimes \mathrm{SU}(3)_L\otimes \mathrm{U}(1)_X\) group with minimal content of leptons andHiggses. The limits on the masses of the bilepton gauge bosons andon the mixing angle among the neutral ones are deduced. Using theFritzsch anzats on quark mixing, we show that the third family ofquarks should  be different from the first two. We obtain a lowerbound on mass of the new heavy neutral gauge boson as 4.032 TeV.Using data on branching decay rates of the \(Z\) boson, we  can fix the limit to the \(Z\) and $Z^\prime$ mixing angle\(\phi\) as \(-0.001\le\phi\le 0.0003\).

  12. Gauge Boson Mixing in the 3-3-1 Models with Discrete Symmetries

    Thi Ngoc Huyen Vu

    Advances in High Energy Physics　2012　1-18　2012

    DOI： 10.1155/2012/715038 　

    ISSN： 1687-7357

    eISSN： 1687-7365

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