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Dispersive detection of a charge qubit with a broadband high-impedance quantum-Hall plasmon resonator
Chaojing Lin, Kosei Teshima, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
Nature Communications 2026/02/10
DOI：
10.1038/s41467-026-69342-y
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Efficient heat-energy conversion from a non-thermal Tomonaga-Luttinger liquid
Hikaru Yamazaki, Masashi Uemura, Haruhi Tanaka, Tokuro Hata, Chaojing Lin, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
Communications Physics 2025/09/30
DOI：
10.1038/s42005-025-02297-6
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Static quantum dot on a large potential hilltop for generating and analyzing hot electrons in the quantum Hall regime
Ryo Oishi, Yuto Hongu, Tokuro Hata, Chaojing Lin, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
Physical Review Applied 2024/09/18
DOI：
10.1103/PhysRevApplied.22.034043
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Resonant Plasmon-Assisted Tunneling in a Double Quantum Dot Coupled to a Quantum Hall Plasmon Resonator
Chaojing Lin, Ko Futamata, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
Physical Review Letters 2024/07/15
DOI：
10.1103/PhysRevLett.133.036301
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Nonuniform heat redistribution among multiple channels in the integer quantum Hall regime
Ryota Konuma, Chaojing Lin, Tokuro Hata, Taichi Hirasawa, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
Physical Review B 2022/06/21
DOI：
10.1103/PhysRevB.105.235302
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Quantized charge fractionalization at quantum Hall Y junctions in the disorder dominated regime
Chaojing Lin, Masayuki Hashisaka, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
Nature Communications 12 (1) 2021/12
DOI：
10.1038/s41467-020-20395-7
ISSN：
2041-1723
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Time-resolved investigation of plasmon mode along interface channels in integer and fractional quantum Hall regimes
Chaojing Lin, Masayuki Hashisaka, Takafumi Akiho, Koji Muraki, Toshimasa Fujisawa
Physical Review B 104 (12) 2021/09/13
DOI：
10.1103/PhysRevB.104.125304
ISSN：
2469-9950
eISSN：
2469-9969
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Erratum: Plasmon modes of coupled quantum Hall edge channels in the presence of disorder-induced tunneling [Phys. Rev. B 103 , 165302 (2021)]
Toshimasa Fujisawa, Chaojing Lin
Physical Review B 2021/08/06
DOI：
10.1103/PhysRevB.104.079902
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Plasmon modes of coupled quantum Hall edge channels in the presence of disorder-induced tunneling
Toshimasa Fujisawa, Chaojing Lin
Physical Review B 2021/04/06
DOI：
10.1103/PhysRevB.103.165302
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Unconventional Temperature Dependence of the Anomalous Hall Effect in HgCr2Se4
Chaojing Lin
Physical Review Letters 2019/08/28
DOI：
10.1103/physrevlett.123.096601
ISSN：
0031-9007 1079-7114
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Quantum anti-dot formed with an airbridge gate in the quantum Hall regime
Chaojing Lin
Applied Physics Express 2019/06/01
DOI：
10.7567/1882-0786/ab2073
ISSN：
1882-0778 1882-0786
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Charge equilibration in integer and fractional quantum Hall edge channels in a generalized Hall-bar device
Chaojing Lin
Physical Review B 99 (19) 2019/05/13
DOI：
10.1103/physrevb.99.195304
ISSN：
2469-9950 2469-9969
eISSN：
2469-9969
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Generation and detection of edge magnetoplasmons in a quantum Hall system using a photoconductive switch
Chaojing Lin, Kyosuke Morita, Koji Muraki, Toshimasa Fujisawa
Japanese Journal of Applied Physics 57 (4S) 2018/04/01
Publisher:
Japan Society of Applied Physics
DOI：
10.7567/JJAP.57.04FK02
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Asperomagnetic order in diluted magnetic semiconductor (Ba,Na)(Zn,Mn)2As2
Chaojing Lin
Applied Physics Letters 2018/01/15
DOI：
10.1063/1.5010988
ISSN：
0003-6951 1077-3118
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Single Crystal Growth and Spin Polarization Measurements of Diluted Magnetic Semiconductor (BaK)(ZnMn)2As2
Chaojing Lin
Scientific Reports 2017/12
DOI：
10.1038/s41598-017-08394-z
ISSN：
2045-2322
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Spin correlations and colossal magnetoresistance inHgCr2Se4
Chaojing Lin
Physical Review B 2016/12/05
DOI：
10.1103/physrevb.94.224404
ISSN：
2469-9950 2469-9969
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Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films
Chaojing Lin
Advanced Materials 2016/08
DOI：
10.1002/adma.201600919
ISSN：
0935-9648
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Analytical Descriptions of Magnetic Properties and Magnetoresistance in n-Type HgCr 2 Se 4
Chaojing Lin
Chinese Physics Letters 2016/07
DOI：
10.1088/0256-307x/33/7/077501
ISSN：
0256-307X 1741-3540
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Homoepitaxial SrTiO3(111) Film with High Dielectric Performance and Atomically Well-Defined Surface
Chaojing Lin
Scientific Reports 2015/09
DOI：
10.1038/srep10634
ISSN：
2045-2322
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Evidence for Half-Metallicity inn-typeHgCr2Se4
Chaojing Lin
Physical Review Letters 2015/08/21
DOI：
10.1103/physrevlett.115.087002
ISSN：
0031-9007 1079-7114
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Observation of Anderson Localization in Ultrathin Films of Three-Dimensional Topological Insulators
Chaojing Lin
Physical Review Letters 2015/05/28
DOI：
10.1103/physrevlett.114.216601
ISSN：
0031-9007 1079-7114
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Electrostatic field effects on three-dimensional topological insulators
Chaojing Lin
Chinese Physics B 2013/09
DOI：
10.1088/1674-1056/22/9/097202
ISSN：
1674-1056
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Parallel field magnetoresistance in topological insulator thin films
Chaojing Lin
Physical Review B 2013/07/22
DOI：
10.1103/physrevb.88.041307
ISSN：
1098-0121 1550-235X
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Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields
Chaojing Lin
Physica E: Low-dimensional Systems and Nanostructures 2012/09
DOI：
10.1016/j.physe.2012.05.032
ISSN：
1386-9477
https://orcid.org/0000-0002-3744-3329