Details of the Researcher

PHOTO

Yasuyuki Shirai
Section
New Industry Creation Hatchery Center
Job title
Professor
Degree

  • 博士（工学）（東北大学）

  • 修士（工学）（佐賀大学）

e-Rad No.
70375187

Research History 8

  • 2023/04 - Present
    Tohoku University　New Industry Creation Hatchery Center

  • 2014/10 - Present
    Tohoku University　New Industry Creation Hatchery Center

  • 1998/04 - 2002/03
    Tohoku University

  • 1993/04 - 1997/03
    Tohoku University

  • 2010/01 -
    Tohoku University　New Industry Creation Hatchery Center

  • 2006/09 -
    株式会社フジキン退社

  • 2002/04 -
    Tohoku University　New Industry Creation Hatchery Center

  • 1992/04 -
    株式会社フジキン入社

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Education 3

  • 東北大学大学院　工学研究科　博士課程

    1997/04 - 1998/03

  • 佐賀大学大学院　理工学研究科　修士課程

    1990/04 - 1992/03

  • Saga University　Faculty of Science and Engineering

    - 1990/03

Research Interests 1

  • Semiconductor Manufacturing, Ultra Clean Technology

Research Areas 1

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / Semiconductor Manufacturing

Papers 122

  1. Evaluation of Metal Contamination Behavior on Silicon Wafer Surfaces Rinsed with Deionized Water Containing pg/L-Level Impurities

    Kyohei Tsutano, Takezo Mawaki, Yasuyuki Shirai, Rihito Kuroda

    ECS Transactions　114　(1)　27-33　2024/09/27

    Publisher: The Electrochemical Society

    DOI： 10.1149/11401.0027ecst 　

    ISSN： 1938-5862

    eISSN： 1938-6737

    More details Close

    Two tests were performed to investigate the contamination behavior of bare Si wafers by rinsing them using deionized water (DIW) contaminated with metals at the pg/L-level in a single-wafer cleaning process. First, we found that Al, Ti, Mn, Co, Cu, Sr, and Pb exhibited strong correlations between the metal concentrations in DIW and the wafer surface concentrations under different concentrations in DIW and the same rinse time of 480 min. Second, we observed that the wafer surface concentrations of Al, Ti, Cu, and Pb increased with the rinse time, whereas those of Mn, Co, and Sr were constant at rinse times ranging from 10 to 960 min at metal concentrations of 60 pg/L in DIW. In this test, Cu exhibited a high adsorption ratio on bare Si wafers, even at the pg/L level. These data provide novel insights into wet processes for device manufacturing.

  2. Impact of Bulk Nanobubble Water on a TiO<inf>2</inf> Solid Surface: A Case Study for Medical Implants

    Masayoshi Takahashi, Masahiro Nakazawa, Takahiro Nishimoto, Mitsuyuki Odajima, Yasuyuki Shirai, Shigetoshi Sugawa

    Langmuir　2024

    DOI： 10.1021/acs.langmuir.4c03339 　

    ISSN： 0743-7463

    eISSN： 1520-5827

  3. [Invited Paper] A High SNR Global Shutter CMOS Image Sensor Technology for High Precision Absorption Imaging Applications

    Tetsu Oikawa, Rihito Kuroda, Aoi Hamaya, Yoshinobu Shiba, Takafumi Inada, Yushi Sakai, Yasuyuki Shirai, Shigetoshi Sugawa

    ITE Transactions on Media Technology and Applications　12　(2)　167-174　2024

    Publisher: Institute of Image Information and Television Engineers

    DOI： 10.3169/mta.12.167 　

    eISSN： 2186-7364

  4. Nanoshell Formation at the Electrically Charged Gas–Water Interface of Collapsing Microbubbles: Insights from Atomic Force Microscopy Imaging

    Masayoshi Takahashi, Yasuyuki Shirai, Shigetoshi Sugawa

    The Journal of Physical Chemistry Letters　2023/12/29

    DOI： 10.1021/acs.jpclett.3c03314 　

  5. Accelerated germination of aged recalcitrant seeds by K+-rich bulk oxygen nanobubbles

    Mijung Kim, Akio Shoji, Toshiaki Kobayashi, Yasuyuki Shirai, Shigetoshi Sugawa, Masayoshi Takahashi

    Scientific Reports　13　(1)　2023/12

    DOI： 10.1038/s41598-023-30343-2 　

    eISSN： 2045-2322

  6. Mineralization of Poly(vinyl alcohol) by Ozone Microbubbles under a Wide Range of pH Conditions Peer-reviewed

    Masayoshi Takahashi, Ryo Nakatsuka, Shuzo Kutsuna, Yasuyuki Shirai, Shigetoshi Sugawa

    Langmuir　2023/10/18

    DOI： 10.1021/acs.langmuir.3c01838 　

  7. Visualization and Analysis of Temporal and Steady-State Gas Concentration in Process Chamber Using 70-dB SNR 1,000 fps Absorption Imaging System

    Y. Sakai, Y. Shiba, T. Inada, T. Goto, T. Suwa, T. Oikawa, A. Hamaya, A. Sutoh, T. Morimoto, Y. Shirai, S. Sugawa, R. Kuroda

    IEEE Transactions on Semiconductor Manufacturing　1-1　2023

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/tsm.2023.3267024 　

    ISSN： 0894-6507

    eISSN： 1558-2345

  8. Adsorption and surface reaction of isopropyl alcohol on SiO2 surfaces Peer-reviewed

    Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai, Shigetoshi Sugawa

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　40　(5)　2022/09

    DOI： 10.1116/6.0002002 　

    ISSN： 0734-2101

    eISSN： 1520-8559

  9. A 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements Peer-reviewed

    Tetsu Oikawa, Rihito Kuroda, Keigo Takahashi, Yoshinobu Shiba, Yasuyuki Fujihara, Hiroya Shike, Maasa Murata, Chia-Chi Kuo, Yhang Ricardo Sipauba Carvalho da Silva, Tetsuya Goto, Tomoyuki Suwa, Tatsuo Morimoto, Yasuyuki Shirai, Takafumi Inada, Yushi Sakai, Masaaki Nagase, Nobukazu Ikeda, Shigetoshi Sugawa

    IEEE TRANSACTIONS ON ELECTRON DEVICES　69　(6)　2965-2972　2022/06

    DOI： 10.1109/TED.2022.3165520 　

    ISSN： 0018-9383

    eISSN： 1557-9646

  10. A 1000fps High SNR Voltage-domain Global Shutter CMOS Image Sensor with Two-stage LOFIC for In-Situ Fluid Concentration Distribution Measurements

    Tetsu Oikawa, Rihito Kuroda, Keigo Takahashi, Yoshinobu Shiba, Yasuyuki Fujihara, Hiroya Shike, Maasa Murata, Chia-Chi Kuo, Yhang Ricardo, Sipauba Carvalho, da Silva, Tetsuya Goto, Tomoyuki Suwa, Tatsuo Morimoto, Yasuyuki Shirai, Masaaki Nagase, Nobukazu Ikeda, Shigetoshi Sugawa

    International Image Sensor Workshop (IISW)　258-261　2021/09

  11. Free-Radical Generation from Bulk Nanobubbles in Aqueous Electrolyte Solutions: ESR Spin-Trap Observation of Microbubble-Treated Water. International-journal Peer-reviewed

    Masayoshi Takahashi, Yasuyuki Shirai, Shigetoshi Sugawa

    Langmuir : the ACS journal of surfaces and colloids　37　(16)　5005-5011　2021/04/27

    DOI： 10.1021/acs.langmuir.1c00469 　

    More details Close

    Microbubbles are very fine bubbles that shrink and collapse underwater within several minutes, leading to the generation of free radicals. Electron spin resonance spectroscopy (ESR) confirmed the generation of hydroxyl radicals under strongly acidic conditions. The drastic environmental change caused by the collapse of the microbubbles may trigger radical generation via the dispersion of the elevated chemical potential that had accumulated around the gas-water interface. The present study also confirmed the generation of ESR signals from the microbubble-treated waters even after several months had elapsed following the dispersion of the microbubbles. Bulk nanobubbles were expected to be the source of the spin-adducts of hydroxyl radicals. Such microbubble stabilization and conversion might be caused by the formation of solid microbubble shells generated by iron ions in the condensed ionic cloud around the microbubble. Therefore, the addition of a strong acid might cause drastic changes in the environment and destroy the stabilized condition. This would restart the collapsing process, leading to hydroxyl radical generation.

  12. Analysis of Reaction and Decomposition of Isopropyl Alcohol on Copper and Copper Oxide Surfaces Toward Area-selective Processes

    Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa

    5th Area-Selective Deposition Workshop (ASD 2021)　session3-4　1　2021/04

  13. Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes Peer-reviewed

    Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai, Shigetoshi Sugawa

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　39　(1)　2021/01

    DOI： 10.1116/6.0000618 　

    ISSN： 0734-2101

    eISSN： 1520-8559

  14. Study on influence of O<inf>2</inf> concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors

    Tomoyuki Suwa, Akinobu Teramoto, Yasuyuki Shirai, Takenobu Matsuo, Nobutaka Mizutani, Shigetoshi Sugawa

    ECS Transactions　97　(3)　23-29　2020/04

    DOI： 10.1149/09703.0023ecst 　

    ISSN： 1938-6737

    eISSN： 1938-5862

  15. Study on CF4/O-2 plasma resistance of O-ring elastomer materials Peer-reviewed

    Tetsuya Goto, Shogo Obara, Tomoya Shimizu, Tsuyoshi Inagaki, Yasuyuki Shirai, Shigetoshi Sugawa

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　38　(1)　2020/01

    DOI： 10.1116/1.5124533 　

    ISSN： 0734-2101

    eISSN： 1520-8559

  16. Amorphous titanium-oxide supercapacitors with high capacitance Peer-reviewed

    Mikio Fukuhara, Tomoyuki Kuroda, Fumihiko Hasegawa, Yasuyuki Shirai, Tomoyuki Suwa, Toshiyuki Hashida, Masahiko Nishijima

    EPL　128　(5)　2019/12

    DOI： 10.1209/0295-5075/128/58001 　

    ISSN： 0295-5075

    eISSN： 1286-4854

  17. A high-sensitivity compact gas concentration sensor using ultraviolet light absorption with a heating function for a high-precision trimethyl aluminum gas supply system Peer-reviewed

    Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa

    JAPANESE JOURNAL OF APPLIED PHYSICS　58　2019/04

    DOI： 10.7567/1347-4065/aafe69 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  18. Anodic oxidization of Al-Y amorphous alloy ribbons and their capacitive properties Peer-reviewed

    Mikio Fukuhara, Tomoyuki Kuroda, Fumihiko Hasegawa, Yasuyuki Shirai, Toshiyuki Hashida, Kazuya Konno

    JOURNAL OF ALLOYS AND COMPOUNDS　776　757-762　2019/03

    DOI： 10.1016/j.jallcom.2018.10.346 　

    ISSN： 0925-8388

    eISSN： 1873-4669

  19. High Sensitivity Compact Gas Concentration Sensor with Heating Function for High Precision Trimethyl Aluminum Gas Supply System

    Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa

    2018 International Conference on Solid State Devices and Materials　587-588　2018/09

  20. A High Sensitivity and Compact Real Time Gas Concentration Sensor for Semiconductor and Electronic Device Manufacturing Process Peer-reviewed

    Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa

    SELECTED PROCEEDINGS FROM THE 233RD ECS MEETING　85　(13)　1399-1405　2018

    DOI： 10.1149/08513.1399ecst 　

    ISSN： 1938-5862

    eISSN： 1938-6737

  21. Stable yttrium oxyfluoride used in plasma process chamber Peer-reviewed

    Yoshinobu Shiba, Akinobu Teramoto, Tetsuya Goto, Yukio Kishi, Yasuyuki Shirai, Shigetoshi Sugawa

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　35　(2)　2017/03

    DOI： 10.1116/1.4975143 　

    ISSN： 0734-2101

    eISSN： 1520-8559

  22. Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal Peer-reviewed

    Tomoyuki Suwa, Akinobu Teramoto, Yasumasa Koda, Masaya Saito, Hisaya Sugita, Marie Hayashi, Junichi Tsuchimoto, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa

    ECS Meeting Abstracts　MA2016-02　(27)　1836-1836　2016/09/01

    Publisher: The Electrochemical Society

    DOI： 10.1149/ma2016-02/27/1836 　

    eISSN： 2151-2043

    More details Close

    Introduction Al2O3 film is an attractive gate dielectric material for the power devices [1] and metal-insulator-metal capacitors [2]. For Al2O3 deposition, the atomic layer deposition (ALD) is one of the most promising methods [3]. It is considered that the oxidation is one of the important processes in ALD. In the case of using radical oxidation in ALD, it is suggested by XPS evaluation that the oxidizing reaction is occurred at the Al2O3/Si interface during ALD [4]. In the former study, H2O oxidation at stage temperature of 75 °C was shown to be effective because of not oxidizing Si [4]. However the oxidation ability of H2O becomes low at such low temperature. Therefore, it is required to introduce the post-deposition-annealing (PDA) without oxidizing the interface to improve Al2O3 film quality [4, 5]. In this paper, the characteristics of Al2O3/Si interface formed during ALD and PDA are evaluated by MIS capacitor, and its interface structure was also observed by Rutherford backscattering spectroscopy (RBS) for clarifying the mechanism of its degradation. Experiment MIS capacitors were fabricated on Cz-n Si(100) wafers (8-12 ohm cm). At first, the native oxide on Si surface was removed by diluted HF (0.5%), and after that Al2O3films (20 nm) were deposited on Si by ALD [4]. Finally, Al-electrodes were formed by the evaporation. The Al2O3 films were prepared with and without PDA. Here, PDA-I and PDA-II were carried out by O2 annealing at 400 oC [5] and Ar/O2 plasma oxidation [6], respectively. For RBS measurement, Co(10 nm)/SiN(5 nm)/Si(100)-substrate were used. SiN was formed by low-pressure thermal CVD at 725 oC on Si substrate, and after that Co was formed by sputtering. Here, Co was used because it is easy to detect the oxidizing reaction at Al2O3/Co interface. Al2O3films were deposited on Co by 11-cycles-ALD. Here, by 11-cycles-ALD, Al2O3film (3 nm) was deposited on Si. Results and Discussion Figure 1 shows the capacitance-voltage (C-V) curves of MIS capacitors. Four samples for each were measured. In the case of Al2O3 without PDA, flat band voltage (Vfb) is negative value such as around -2.0 V. It is suggested that the positive charges (1.87×1012 cm-2 ~ 2.53×1012 cm-2) exist in Al2O3 film. After PDA-I, Vfb becomes almost same value such as 0.1 V and the negative charges (1.12×1012 cm-2 ~ 1.17×1012 cm-2) exist in Al2O3 film. In addition, Vfb variability drastically decreases. It is considered that O2 annealing at 400 oC is very effective to improve Al2O3 film quality [5]. On the other hand, after PDA-II, Vfb drastically shifts to the positive direction by the negative charges (2.96×1012 cm-2 ~ 8.61×1012 cm-2) and its variability is large. Moreover the slope of C-V curve with PDA-II is smaller than that without PDA because of increasing the interface trap. As a result, it is considered that the interfacial quality became poor by Ar/O2plasma oxidation in this experiment. Figure 2 shows the energy spectra of 450 keV He+ ions backscattered from Al2O3/Co/SiN/Si. Al2O3films without PDA, with PDA-II 20sec, 60sec and 300sec were measured. Several observed peaks indicate the energy of He ions scattered by Co, Al, Si, O and N atoms, respectively. Figure 3 (a)-(c) show the narrow spectra related to O, Al and Co, respectively. Especially, in the case of PDA-II 300 sec, each spectrum in fig. 3(a)-(c) spreads more widely. It is suggested that Al and Co interdiffuse at the interfacial layer during PDA-II 300sec. As a result, it is suggested that the intermediate oxide states consisting of Al-Co-O are formed. Conclusion We investigated the influence of PDA to the Al2O3 interface. O2 annealing at 400 oC is very effective for improving the Al2O3 film quality. However, by Ar/O2 plasma oxidation, it is considered that Al and Co interdiffuse at the interface. It is expected that a similar phenomenon is also caused with Al2O3/Si interface, then it is considered that the intermediate oxide states consisting of Al-Si-O cause the electrical characteristic degradation such as increase of fixed charge, interface trap and variability. Acknowledgments This work was carried out at fluctuation free facility of New Industry Creation Hatchery Center, Tohoku University. Reference [1] P.D. Ye et al., Appl. Phys. Lett., 86(2005) 063501 [2] A. Farcy et al., Microelectronic Eng., 85(2008) 1940-1946 [3] R. L. Puurunen, J. Appl. Phys. 97(2005) 121301 [4] H. Sugita, et al., ECS Trans, 66(2015) 305-314 [5] Y. Koda, et al., ECS Trans., to be published at 229thECS meeting [6] K. Sekine, et al., IEEE TRANS. ON ELECTRON DEVICE, 48 (8) (2001) 1550 <p></p> Figure 1 <p></p>

  23. A High Sensitivity Compact Gas Concentration Sensor using UV Light and Charge Amplifier Circuit

    Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa

    2016 IEEE SENSORS　2016

    ISSN： 1930-0395

  24. Effects of Oxygen Microbubbles on Photoresist Layers under Hot Water Conditions Peer-reviewed

    Masayoshi Takahashi, Yasuyuki Shirai, Akinobu Teramoto, Tunejirou Takahashi, Katsumi Tatera, Kouhei Matsuura, Hideo Horibe

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY　29　(4)　643-646　2016

    DOI： 10.2494/photopolymer.29.643 　

    ISSN： 0914-9244

  25. Effect of Oxygen Impurity on Nitrogen Radicals in Post-Discharge Flows

    Yoshinobu Shiba, Akinobu Teramoto, Tomoyuki Suwa, Kensuke Watanabe, Shinichi Nishimura, Yasuyuki Shirai, Shigetoshi Sugawa

    ECS Meeting Abstracts　MA2015-02　(47)　1848-1848　2015/07/07

    Publisher: The Electrochemical Society

    DOI： 10.1149/ma2015-02/47/1848 　

    eISSN： 2151-2043

    More details Close

    Introduction Silicon nitride films (SiNx) formed at low temperature are strongly required in very shrunk LSI process. The plasma silicon nitride formation technology with low damage at low temperature has been reported [1]. We have reported that the amount of active nitridation species in the process is important to form to high quality SiNx, especially on the side wall [2]. When the oxygen impurity is remained in the process gases, the oxygen is excited during the plasma processing. Then the excited oxygen is degraded the SiNx film quality [3-6]. However, it has not been reported the effect of inactive oxygen molecules in the nitridation process. In this paper, we report the effect of the impurity oxygen in post charge flows on the process of nitride formation. Experiment Fig.1 shows the schematic diagram of the experimental setup used for the reaction products measurement in the gases. It has a mixing point placed at downstream of a Nitrogen Radical Generator [7]. The produced gases reacted from the nitrogen radicals and O2 gas are measured by Fourier Transform Infrared spectroscopy (FTIR). The impurity concentration of oxygen in N2 gas was less than 1 ppb, this indicates the oxygen impurity of supply gas did not affect the experimental results. Nitrogen radicals concentration was generated by the Nitrogen Radical Generator several ten ppm in the N2 gas [7]. The pressure in Nitrogen Radical Generator was varied from 30 to 120 kPa in the case of the N2 flow rate at 5, 7, and 10slm. The O2flow rate were varied from 8 to 190 sccm. Results and discussions Fig. 2 show the absorbance of (a)O3, (b)N2O produced from the nitrogen radicals and O2gas. Horizontal axis of Fig. 2(a) denotes the product of the oxygen partial pressure and the oxygen molecules concentration. Here, this is equivalent to the collision probability of the oxygen molecules and the oxygen molecules. The produced O3concentration increases with the increase of the collision probability. Then, horizontal axis of Fig. 2(b) denotes the product of the oxygen partial pressure and the elements' density exception of the oxygen molecules, that is, they’re nitrogen molecules and nitrogen radicals. Here, this is equivalent to the collision probability of the oxygen molecules and the nitrogen molecules including the nitrogen radicals. The produced N2O concentration decreases with the increase of the collision probability. The oxygen molecules become oxygen radicals by the colliding with the nitrogen radicals because only O3 and N2O are generated. It’s considered that the numbers of nitrogen radicals decrease at the collision with oxygen molecules. Then, Fig. 2(a) and (b) show the oxygen radicals are more easier to react to the oxygen molecules or the oxygen radicals than the nitrogen molecules or the remained nitrogen radicals. The nitrogen radicals easily transfer the energy to the oxygen, and the nitrogen become inactive. These results indicates that the oxygen impurity has strong impact on the radical nitridation process. The oxygen components, even O2molecules, must be reduced in the process using nitrogen radicals. Acknowledgement This research has been carried out at fluctuation free facility of New Industry Creation Hatchery Center, Tohoku University. References [1] Y. Nakao, et al., International Conference on Solid State Devices and Materials, Nagoya, 2011, pp905-906 [2] Y. Nakao, et al., ECS Trans. 45 (3) 421-428 (2012) [3] X.  Guo, et al., IEEE Electron Device Lett., Vol.19, No.6, pp.207 (1999). [4] D.M.Brown, et al., J. Electrochem. Soc., Vol.115, No.3, pp.311 (1968).   [5] L.He, et al., Jpn. J. Appl. Phys., vol.35, pt.1, No.2B, pp.1503 (1996).   [6] V. A. Gritsenko, et al., Thin Solid Films, Vol.51, pp.353 (1978). [7]Gaku Oinuma，et al., J. Phys. D: Appl. Phys. 41 (2008) 155204 <p></p> Figure 1 <p></p>

  26. Surface metal cleaning of GaN surface based on redox potential of cleaning solution Peer-reviewed

    K. Nagao, K. Nakamura, A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S. Sugawa, T. Ohmi

    ECS Transactions　66　(7)　11-21　2015

    DOI： 10.1149/06607.0011ecst 　

    ISSN： 1938-6737

    eISSN： 1938-5862

  27. Effect of oxygen impurity on nitrogen radicals in post-discharge flows Peer-reviewed

    Y. Shiba, A. Teramoto, T. Suwa, K. Watanabe, S. Nishimura, Y. Shirai, S. Sugawa

    ECS Transactions　69　(39)　1-9　2015

    DOI： 10.1149/06939.0001ecst 　

    ISSN： 1938-6737

    eISSN： 1938-5862

  28. High selectivity in dry etching of silicon nitride over Si using a novel hydrofluorocarbon etch gas in a microwave excited plasma for FinFET Peer-reviewed

    Y. Nakao, T. Matsuo, A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, T. Ohmi

    ECS Transactions　61　(3)　29-37　2014

    DOI： 10.1149/06103.0029ecst 　

    ISSN： 1938-5862

    eISSN： 1938-6737

  29. Development of Ultraclean Surface Processing for Gallium Nitride

    Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Kenji Nagano, Tsukuru Katsuyama, Yukihisa Nakao, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    The 25th International Micro Electronics Conference Proceeding　39-46　2013/11

  30. Wet cleaning process for GaN Surface at room temperature

    Yukihiro Tsuji, Tsukuru Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials　162-163　2013/09

  31. XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma treatments

    Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Isao Makabe, Ken Nakata, Tsukuru Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    The 40th International Symposium on Compound Semiconductors (ISCS2013)　(MoPC-06-21)　2013/05

  32. XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma treatments Peer-reviewed

    Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Isao Makabe, Ken Nakata, Tsukuru Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11　10　(11)　1557-1560　2013

    DOI： 10.1002/pssc.201300225 　

    ISSN： 1862-6351

  33. Gas Flow Characteristics in a Plasma Process Chamber and Proposal of New Pulse-Controlled Gas Injection Method Using Interference Matrix Operation for Rapid Stabilization of Gas Pressure Peer-reviewed

    Sadaharu Morishita, Tetsuya Goto, Yasuyuki Shirai, Tadahiro Ohmi

    JAPANESE JOURNAL OF APPLIED PHYSICS　51　(1)　2012/01

    DOI： 10.1143/JJAP.51.016001 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  34. High-corrosion-resistant Al2O3 passivation-film formation by selective oxidation on austenitic stainless steel containing Al Peer-reviewed

    Masafumi Kitano, Hidekazu Ishii, Yasuyuki Shirai, Tadahiro Ohmi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　29　(2)　2011/03

    DOI： 10.1116/1.3543709 　

    ISSN： 0734-2101

  35. Study of the Reflectivity of Silver Films Deposited by Radio Frequency and Direct Current Coupled Magnetron Sputtering Peer-reviewed

    Tetsuya Goto, Nobuaki Seki, Yasuyuki Shirai, Tadahiro Ohmi

    JAPANESE JOURNAL OF APPLIED PHYSICS　50　(1)　2011/01

    DOI： 10.1143/JJAP.50.015801 　

    ISSN： 0021-4922

  36. Dependence of the Decomposition of Trimethylaluminum on Oxygen Concentration Peer-reviewed

    Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY　158　(2)　H93-H96　2011

    DOI： 10.1149/1.3517080 　

    ISSN： 0013-4651

    eISSN： 1945-7111

  37. Dependence of the Decomposition of Trimethylaluminumon Oxygen Concentration (vol 158, pg H93, 2010)

    Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY　158　(5)　S14-S14　2011

    DOI： 10.1149/1.3569822 　

    ISSN： 0013-4651

    eISSN： 1945-7111

  38. High-purity Metal-organic Gas Distribution System

    Satoru Yamashita, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    The 22nd Microelectronics conference proceeding　1-6　2010/11

  39. Applied study of SiO2 Based Film Formed by Oranosiloxane Sol-Gel Precursor

    Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Hirokazu Suzuki, Nobuyuki Manabe, Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    The22nd Microelectronics Conference Proceeding　7-13　2010/11

  40. Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol-Gel Precursor Peer-reviewed

    Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Hirokazu Suzuki, Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    JAPANESE JOURNAL OF APPLIED PHYSICS　49　(11)　2010/11

    DOI： 10.1143/JJAP.49.111503 　

    ISSN： 0021-4922

  41. Evaluation of Narrow Gap Filling Ability in Shallow Trench Isolation by Organosiloxane Sol-Gel Precursor

    Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Nobuyuki Manabe, Hirokazu Suzuki, Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    218th Meeting of The Electrochemical Society　1498　2010/10

  42. Dependence of Thermal Decomposition of Metal Organic Gases on Metal Surface for Gas Distribution System

    Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    218th Meeting of the Electrochemical Society　1771　2010/10

  43. Decomposition Characteristics of Metal-Organic Materials of Ga Doped Zinc Oxide for Evaluation as MOCVD Precursor

    Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Masafumi Kitano, Yasuyuki Shirai, Tadahiro Ohmi

    217th Meeting of The Electrochemical Society　970　2010/05

  44. Dependence of thermal decomposition of metal organic gases on metal surface for gas distribution system Peer-reviewed

    S. Yamashita, K. Watanuki, H. Ishii, Y. Shiba, M. Kitano, Y. Shirai, S. Sugawa, T. Ohmi

    ECS Transactions　33　(13)　121-128　2010

    DOI： 10.1149/1.3485612 　

    ISSN： 1938-5862

    eISSN： 1938-6737

  45. Evaluation of Narrow Gap Filling Ability in Shallow Trench Isolation by Organosiloxane Sol-Gel Precursor Peer-reviewed

    Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Nobuyuki Manabe, Hirokazu Suzuki, Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 8　33　(3)　135-143　2010

    DOI： 10.1149/1.3481600 　

    ISSN： 1938-5862

  46. The Study of Electrical and Structual Properties of SiO2 Film Containing Metal oxide using Organosiloxane-based Silica Precursor

    K. WATANUKI, A. INOKUCHI, A. BAMBA, H. SUZUKI, T. KOIKE, T. ADACHI, A. TERAMOTO, Y. SHIRAI, S. SUGAWA, T. OHMI

    AVS 56th International Symposium & Exhibition　81　2009/11

  47. Decomposition Characteristic of Metal-organic Gases

    S. Yamashita, M. Nagase, K. Ikeda, M. Kitano, Y. Shirai, T. Ohmi

    AVS 56th International Symposium & Exhibition　115　2009/11

  48. Influence of Mg concentration in Al-Mg-Zr alloy in nonaqueous anodic oxide film

    Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Yasuyuki Shirai, Tadahiro Ohmi

    215th Meeting of The Electrochemical Society　0656　2009/05

  49. Thermal Decomposition Characteristics of Metal-organic Materials of Zinc Oxide for Evaluation as MOCVD Precursor

    Kohei Watanuki, Hirokazu Asahara, Atsutoshi Inokuchi, Takumi Kadota, Chihiro Hasegawa, Hiroki Kanato, Akinobu Teramoto, Yasuyuki Shirai, Tadahiro Ohmi

    215th Meeting of The Electrochemical Society　0703　2009/05

  50. Inductively coupled plasma generator for an environmentally benign perfluorocarbon abatement system Peer-reviewed

    Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda, Yasuyuki Shirai, Akinobu Teramoto, Masaki Hirayama, Tadahiro Ohmi, Takayuki Watanabe, Takashi Ito

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　27　(3)　465-470　2009/05

    DOI： 10.1116/1.3106612 　

    ISSN： 0734-2101

    eISSN： 1520-8559

  51. Adsorption Behavior of Various Fluorocarbon Gases on the Silicon Wafer Surface Peer-reviewed

    Atsushi Hidaka, Satoru Yamashita, Takeyoshi Kato, Yasuyuki Shirai, Tadahiro Ohmi

    Extended Abstracts of the 2004 International Conference on SOLID STATE DEVICES and MATERALS　462-463　2009/04

  52. The anodic oxide film formed on A-Mg-Zr alloys in non-aqueous electrolyte Peer-reviewed

    Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Yasuyuki Shirai, Tadahiro Ohmi

    ECS Transactions　19　(29)　37-43　2009

    DOI： 10.1149/1.3259797 　

    ISSN： 1938-5862

    eISSN： 1938-6737

  53. Improvement of barrier anodic oxide Al2O3 passivation of aluminum alloy for LSI/FPD plasma process equipment Peer-reviewed

    Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Yasuyuki Shirai, Tadahiro Ohmi

    ECS Transactions　16　(32)　89-94　2009

    DOI： 10.1149/1.3091908 　

    ISSN： 1938-5862

    eISSN： 1938-6737

  54. High-Efficiency PFC Abatement System Utilizing Plasma Decomposition and Ca(OH)(2)/CaO Immobilization Peer-reviewed

    Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda, Yasuyuki Shirai, Akinobu Teramoto, Masaki Hirayama, Tadahiro Ohmi, Takayuki Watanabe, Takashi Ito

    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING　21　(4)　668-675　2008/11

    DOI： 10.1109/TSM.2008.2005400 　

    ISSN： 0894-6507

    eISSN： 1558-2345

  55. Improvement of Nonaqueous Anodic Oxide Al2O3 Passivations of Aluminum Alloy Surface for LSI/FPD Plasma Process Equipment.

    Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Yasuyuki Shirai, Tadahiro Ohmi

    PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008) The Electrochemical Society, Meeting Abstracts, Honolulu, Hawaii　1625　2008/10

  56. 13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory Peer-reviewed

    Ichirou Takahashi, Masaki Hirayama, Yasuyuki Shirai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

    FERROELECTRICS　368　328-333　2008

    DOI： 10.1080/00150190802368008 　

    ISSN： 0015-0193

    eISSN： 1563-5112

  57. 25. Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7Film (STN) on SiON formed by microwave-excited plasma and (Ba1-x,Srx)TiO3(BST) by rf sputtering applied to One-Transistor-Type Ferroelectric Memory Device.

    Ichirou Takahashi, Tomoyuki Suwa, Keita Azumi, Tatsunori Isogai, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

    The 19th International Symposium of Integrated Ferroelectrics (ISIF 2007)　2007/05

  58. Development of microwave-excited plasma-enhanced metal-organic chemical vapor deposition system for forming ferroelectric Sr-2(Ta1-xNbx)(2)O-7 thin film on amorphous SiO2 Peer-reviewed

    Ichirou Takahashi, Kiyoshi Funaiwa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　46　(4B)　2200-2204　2007/04

    DOI： 10.1143/JJAP.46.2200 　

    ISSN： 0021-4922

  59. High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source

    A. Hiroe, M. Hirayama, Y. Shirai, A. Teramoto, T. Ohmi

    IDW '07 - Proceedings of the 14th International Display Workshops　2　503-506　2007

  60. Development of a xenon recycling and supply system for plasma process

    M. Yamawaki, T. Urakami, Y. Ishihara, Y. Shirai, A. Teramoto, T. Ohmi

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings　175-178　2007

    DOI： 10.1109/ISSM.2007.4446797 　

    ISSN： 1523-553X

  61. Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)<inf>2</inf>/CaO under a decompression atmosphere

    K. Suzuki, Y. Ishihara, K. Sakoda, Y. Shirai, M. Hirayama, A. Teramoto, T. Ohmi, T. Watanabe

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings　171-174　2007

    DOI： 10.1109/ISSM.2007.4446796 　

    ISSN： 1523-553X

  62. Development of barrier anodic oxide Al2O3 passivations of aluminum alloy surface for LSI/FPD plasma process equipment Peer-reviewed

    Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Yasuyuki Shirai, Tadahiro Ohmib

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY　154　(9)　C530-C539　2007

    DOI： 10.1149/1.2755877 　

    ISSN： 0013-4651

    eISSN： 1945-7111

  63. Fabrication of Pt/Sr-2(Ta1-x,Nb-x)(2)O-7/SiO2/Si field-effect transistor for one-transistor-type ferroelectric random access memory

    Ichirou Takahashi, Keita Azumi, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

    PROCEEDINGS OF THE 6TH WSEAS INTERNATIONAL CONFERENCE ON MICROELECTRONICS, NANOELECTRONICS AND OPTOELECTRONICS　37-+　2007

  64. Formation of Ferroelectric Sr2(Ta1-xNbx)2O7 Thin Film on Amorphous SiO2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition

    Ichirou Takahashi, Kiyoshi Funaiwa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

    The 2006 International Conference on SOLID STATE DEVICES and MATERIALS　2006　124-125　2006/09

  65. An outgas free passivation technology for semiconductor vacuum chamber using advanced anodic oxidation Peer-reviewed

    Y. Kawase, M. Kitano, F. Mizutani, H. Morinaga, Y. Shirai, T. Ohmi

    ECS Transactions　2　(9)　67-71　2006

    DOI： 10.1149/1.2408929 　

    ISSN： 1938-5862

    eISSN： 1938-6737

  66. A new air cleaning and cooling instrument using oblique honeycomb

    S. Minobe, I. Terada, Y. Motoyoshi, H. Hanaoka, Y. Shirai, T. Ohmi

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings　417-420　2006

    DOI： 10.1109/ISSM.2006.4493124 　

    ISSN： 1523-553X

  67. Adsorption behavior of various fluorocarbon gases on silicon wafer surface

    Atsushi Hidaka, Satoru Yamashita, Hidekazu Ishii, Takeyoshi Kato, Naoki Tanahashi, Masafumi Kitano, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai, Tadahiro Ohmi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　44　(4 B)　2245-2251　2005/04

    DOI： 10.1143/JJAP.44.2245 　

    ISSN： 0021-4922

  68. The degradation prevention of resin materials for semiconductor manufacturing equipment by applying the ultra-high purity gas supply technology

    Atsushi Hidaka, Satoru Yamashita, Naoki Tanahashi, Hidekazu Ishii, Masafumi Kitano, Yasuyuki Shirai, Tadahiro Ohrni

    Solid State Phenomena　103-104　255-258　2005

    DOI： 10.4028/3-908451-06-x.255 　

    ISSN： 1012-0394

  69. The Thermal Degradation Prevention of Fluorocarbon Material for Interlayer Dielectric Film

    Atsushi Hidaka, Satoru Yamashita, Masafumi Kitano, Akinobu Teramoto, Yasuyuki Shirai, Tadahiro Ohmi

    206th Meeting of The Electrochemical Society　2004/10

  70. High Quality Plasma Processing using Microwave Excited Plasma System with Xenon Gas

    Y. Shirai, A. Teramoto, M. Hirayama, T. Ohmi, H. Hasegawa, Y. Ishihara, T. Satoh, M. Yamawaki

    International Symposium on Semiconductor Manufacturing (ISSM 2004)　2004/09

  71. Under Ground Structure Design of Fluctuation Free Facility.

    Hirokazu Suzuki, Kenji Muraoka, Kouichi Sato, Mitsuhara Miura, Yasuyuki Shirai, Tadahiro Ohmi

    2002 IEEE International Symposium on Semiconductor Manufacturing　91-94　2002/10

  72. Organic contamination behavior on the silicon wafer surface stored in new type plastic pod under reduced pressure

    Teruyuki Hayashi, Takashi Kawaguchi, Yukihiro Kanechika, Naoki Tanahashi, Misako Saito, Kaname Suzuki, Yoshihide Wakayama, Masaki Hirayama, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

    2002 IEEE International Symposium on Semiconductor Manufacturing　169-172　2002/10

  73. The energy-saving technology of Heating Ventilating and Air-conditioning system.

    Hideo Hanaoka, Souji Fukuda, Takeshi Honma, Yoshinori Okubo, Yasuyuki Shirai, Tadahiro Ohmi

    International Symposium on Semiconductor Manufacturing2002 (ISSM 2002)　265-270　2002/10

  74. High Performance and Low Cost Step-by-Step Investment Type Semiconductor Manufacturing System.

    Masafumi Kitano, Kouji Yoshida, Isao Akutsu, Yoshio Ishihara, Tetsuya Goto, Masaki Hirayama, Yasuyuki Shirai, Tadahiro Ohmi

    International Symposium on Semiconductor Manufacturing 2002(ISSM 2002)　313-316　2002/10

  75. Al2O3 Passivation Film on Austenitic Stainless Steel Free from Plasma Damage

    Masafumi Kitano, Masaaki Nagase, Yasuyuki Shirai, Tadahiro Ohm

    JOINT INTERNATIONAL MEETING <The 200th Meeting of The Electrochemical Society ／The 52nd Meeting of the International Society of Electrochemistry>　641　2001/09

  76. 39. Influence of Molecular Weight of Organic Contaminants upon Adsorption Behaviors onto Silicon Surfaces

    Masaaki Nagase, Masafumi Kitano, Yoshihide Wakayama, Yasuyuki Shirai, Tadahiro Ohmi

    JOINT INTERNATIONAL MEETING <The 200th Meeting of The Electrochemical Society ／The 52nd Meeting of the International Society of Electrochemistry>　1405　2001/09

  77. Influence of Molecular Weight of Organic Contaminants upon Adsorption Behaviors onto Silicon Surfaces

    Masaaki Nagase, Masafumi Kitano, Yoshihide Wakayama, Yasuyuki Shirai, Tadahiro Ohmi

    Electrochemical Society Proceedings (Cleaning Technology in Semiconductor Device Manufacturing VII)　2001-26　47-53　2001/09

  78. Al2O3 Passivation Film on Austentic Stainless Steel Free From Plasma Damage

    Masafumi Kitano, Masaaki Nagase, Yasuyuki Shirai, Tadahiro Ohmi

    Electrochemical Society Proceedings (Corrosion and Corrosion Protection)　115-121　2001/09

  79. Precise control of gas concentration ratio in process chamber Peer-reviewed

    M. Nagase, M. Kitano, Y. Shirai, T. Ohmi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　40　(8)　5168-5172　2001/08

    DOI： 10.1143/jjap.40.5168 　

    ISSN： 0021-4922

  80. Energy Saving in the Fabs.

    Hirokazu Suzuki, Yasuyuki Shirai, Tadahiro Ohmi

    ISESH ,8th Annual Conference Kenting 2001　1D-1-1D-4　2001/06

  81. Impurity measurement in specialty gases using an atmospheric pressure ionization mass spectrometer with a two-compartment ion source Peer-reviewed

    Masafumi Kitano, Yasuyuki Shirai, Atsushi Ohki, Shinichi Babasaki, Tadahiro Ohmi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　40　(4 B)　2688-2693　2001/04

    DOI： 10.1143/jjap.40.2688 　

    ISSN： 0021-4922

  82. Development of the next generation Si wafer transfer/stock system

    Yukihiro Kanechika, Takashi Kawaguchi, Takashi Kawaguchi, Toshihiko Jimbo, Masahiro Yamasaki, Masaki Hirayama, Yasuyuki Shirai, Tadahiro Ohmi

    IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings　495-498　2001

    DOI： 10.1109/ISSM.2001.963023 　

    ISSN： 1523-553X

  83. A New Approach for Obtaining Highly Reliable Wet Oxidation Process in Microelectronics Using Catalythic Water Vapor Generator (WVG) System

    O.Nakamura, Y.Shirai, K.Kawada, N.Ikeda, H.Aharoni, T.Ohmi

    International Conference on Materials Science and Technologies, Israel　44　2000/11

  84. Perfectly Etching Uniformity Control of Various Doped Oxide Films Using an Anhydrous HF Gas

    Hiroshi Arakawa, Yasuyuki Shirai, Tadahiro Ohmi

    Extended Abstracts of the 2000 International Conference on SOLID STATE DEVICES and MATERALS, Sendai　2000　196-197　2000/08

  85. Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source

    Masafumi Kitano, Yasuyuki Shirai, Atsushi Ohki, Tadahiro Ohmi

    Extended Abstracts of the 2000 International Conference on SOLID STATE DEVICES and MATERALS, Sendai　2000　200-201　2000/08

  86. Contamination Reduction for 300mm Processes

    Tadahiro Ohmi, Shigetoshi Sugawa, Masaki Hirayama, Yasuyuki Shirai

    Semicon West 2000: Symposium on Contamination-Free Manufacturing (CFM) for Semiconductor Processing, San Francisco　A1-A5　2000/07

  87. Energy saving in semiconductor fabs by out-air handling unit performance improvement

    Hirokazu Suzuki, Hideo Hanaoka, Yoshinori Ohkubo, Yoshio Yamazaki, Yasuyuki Shirai, Tadahiro Ohmi

    IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings　(1)　293-296　2000

    ISSN： 1523-553X

  88. Highly Reliable Ultra Thin Gate Oxide Grown using Water Vapor Generator.

    O. Nakamura, T. Ohkawa, M. Nakagawa, Y. Shirai, K. Kawada, N. Ikeda, Y. Minami, A. Morimoto, T. Ohmi

    AVS 46th International Symposium, Seattle　1999/10

  89. Gas Distribution System using an Advanced Flow Controller

    M. Nagase, O. Nakamura, M. Kitano, Y. Shirai, T. Ohmi

    Abstract, AVS 46th International Symposium, Seattle　33　1999/10

  90. Proposal of New Paradigm LSI Structures and Their Manufacturing

    T. Ohmi, M. Hirayama, Y. Shirai

    Abstract, AVS 46th International Symposium, Seattle　66　1999/10

  91. Water Vapor Generator Using Catalytic Reactor

    Koji KAWADA, Yukio MINAMI, Akihiro MORIMOTO, Nobukazu IKEDA, Osamu NAKAMURA, Yasuyuki SHIRAI, Tadahiro OHMI

    Precision Science and Technology for Perfect Surfaces, Proceedings of the 9th International Conference on Production Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE Publication Series No. 3, Osaka　432-437　1999/08

  92. Cr2O3 Passivated Gas Tubing System and Installation Method.

    Masafumi KITANO, Osamu NAKAMURA, Masaaki NAGASE, Yasuyuki SHIRAI, Tadahiro OHMI

    Precision Science and Technology for Perfect Surfaces, Proceedings of the 9th International Conference on Production Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE Publication Series No. 3, Osaka　438-443　1999/08

  93. Precise Control of Gas Concentration Ratio in Process Chamber.

    Masaaki NAGASE, Osamu NAKAMURA, Masafumi KITANO, Yasuyuki SHIRAI, Tadahiro OHMI

    Precision Science and Technology for Perfect Surfaces, Proceedings of the 9th International Conference on Production Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE Publication Series No. 3, Osaka　444-449　1999/08

  94. Critical Requirements for Very High Quality Processes in 300mm Production

    Tadahiro Ohmi, Masaki Hirayama, Yasuyuki Shirai

    Semicon West 99: Symposium on Contamination-Free Manufacturing (CFM) for Semiconductor Processing, San Francisco　A1-A40　1999/07

  95. PASSIVITY ISSUE IN DEVICE FABRICATION

    Tadahiro Ohmi, Katsuyuki Sekine, Tskeshi Ohkawa, Ryu Kaihara, Yasuyuki Shirai, Masaki Hirayama

    Electrochemical Society Proceedings　99　(42)　764-777　1999/05

  96. Construction of the distribution system for ozonized water used in the wet cleaning of Si wafer surface

    O. Nakamura, M. Yoshida, Y. Shirai, M. Nagase, M. Kitano, M. Gozyuki, Y. Hashimoto, T. Ohmi

    Solid State Phenomena　65-66　161-164　1999

    DOI： 10.4028/www.scientific.net/SSP.65-66.161 　

    ISSN： 1012-0394

    eISSN： 1662-9779

  97. Low-temperature formation of SiO<inf>2</inf> and high dielectrics constant material for ULSI in 21st century

    Tadahiro Ohmi, Katsuyuki Sekine, Ryu Kaihara, Yuji Saito, Yasuyuki Shirai, Masaki Hirayama

    Materials Research Society Symposium - Proceedings　567　3-12　1999

    DOI： 10.1557/proc-567-3 　

    ISSN： 0272-9172

  98. Passivation of stainless steel by δ-Al<inf>2</inf>O<inf>3</inf> films resistant to ozonized water Peer-reviewed

    M. Yoshida, A. Seki, Y. Shirai, T. Ohmi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　17　(3)　1059-1065　1999

    DOI： 10.1116/1.581683 　

    ISSN： 0734-2101

  99. Precise Control of Gas Ratio in Process Chamber

    Y. Shirai, O. Nakamura, N. Ikeda, R. Dohi, T. Ohmi

    Abstract, AVS 45th International Symposium, Baltimore　25　1998/11

  100. Construction of the Distribution System for Ozonized Water Used in the Wet cleaning of Si-Wafer Surfaces

    M. Yoshida, Y. Shirai, M. Nagase, M. Kitano, M. Gozyuki, Y. Hashimoto, T. Ohmi

    Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS’98), Abstract Book, Ostende, Belgium　68-69　1998/09

  101. Development of a stainless steel tube resistant to corrosive Cl<inf>2</inf> gas for use in semiconductor manufacturing Peer-reviewed

    T. Ohmi, M. Yoshida, Y. Matudaira, Y. Shirai, O. Nakamura, M. Gozyuki, Y. Hashimoto

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures　16　(5)　2789-2795　1998/09

    ISSN： 1071-1023

  102. Contamination－free Manufacturing for 300mm Wafer Processing

    Tadahiro Ohmi, Masaki Hirayama, Kazuhide Ino, Yasuyuki Shirai

    Semicon West 98:Symposium on Contamination - Free Manufacturing (CFM) for Semiconductor Processing, San Francisco　A1-A19　1998/07

  103. Low－cost, High-Productivity ULSI manufacturing in 300mm Wafer Era

    Masaki Hirayama, Kazuhide Ino, Yasuyuki Shirai

    Silicon, Software, and Smart Machines: Manufacturing Integration in the Semiconductor Industry, Austin　1998/06

  104. Process Gas Recycling System

    T. Hashimoto, Y. Kishida, Y. Shirai, T. Ohmi, M. Itano, H. Aoyama

    Fifth International Environment Safety & Health Conference of the Semiconductor Industry, Korea　1998/05

  105. Highly reliable fitting for gas delivery systems Peer-reviewed

    Nobukazu Ikeda, Yasuyuki Shirai, Tadahiro Ohmi, Michio Yamaji

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　16　(1)　181-187　1998

    DOI： 10.1116/1.580966 　

    ISSN： 0734-2101

  106. Integrated Compact Gas Delivery System

    N.Ikeda, Y.Shirai, M.Yamaji, Y.Mnami, T.Ohmi

    Abstract, AVS 44th National Symposium, San Jose　7　1997/10

  107. Fluorine Passivation Technology for Fluoride Gas Distribution System

    Yasuyuki Shirai, Taiji Hashimoto, Masaki Narazaki, Yoshinori Nakagawa, Tadahiro Ohmi

    The Fifth International Symposium on Semiconductor Manufacturing, Proceedings of ISSM'96, Tokyo　333-336　1996/10

  108. Fluorine Passivation of Metal Surface

    Yasuyuki Shirai, Taiji Hashimoto, Yoshinori Nakagawa, Tadahiro Ohmi

    Special Program, CLEANROOMS '96 WEST, The Conference on Advanced Microcontamination Control and Ultrapure Manufacturing, Santa Clara, CA　68-77　1996/10

  109. Fluoride Gas Distribution System

    Taiji Hashimoto, Yasuyuki Shirai, Masaki Narazaki, Tadahiro Ohmi

    Third International Symposium on Ultra Clean Processing of Silicon Surfaces(UCPSS '96), Antwerp, Belgium　2　1996/09

  110. Specialty Gas Interactions with Ultraclean Silicon Surfaces

    Yasuyuki Shirai, Masakazu Nakamura, Tadahiro Ohmi

    Cleaning Technology in Semiconductor Device Manufacturing, Edited by Richard E. Novak and Jerzy Ruzyllo, PV95-20, The Electrochemical Society, Pennington, NJ　251-256　1996

  111. Cr<inf>2</inf>O<inf>3</inf> passivated gas tubing system for specialty gases Peer-reviewed

    Yasuyuki Shirai

    IEICE Transactions on Electronics　E79-C　(3)　385-391　1996

    ISSN： 0916-8524

  112. Specialty Gas Interactions with Ultraclean Silicon Surfaces

    Yasuyuki Shirai, Masakazu Nakamura, Tadahiro Ohmi

    Extended Abstracts, 188th Electrochemical Society Meeting, Chicago, Illinois, Abstract No. 464　734-735　1995/10

  113. Specialty Gas Interactions with Various Silicon Surfaces

    Yasuyuki Shirai, Masakazu Nakamura, Tadahiro Ohmi

    Extended Abstract, 1995 International Conference on Solid State Devices and Materials, Osaka　929-931　1995/08

  114. Silane Gas Interactions with Various Silicon Surface

    Tsutomu KOJIMA, Masakazu NAKANURA, Yasuyuki SHIRAI, Masaki NARAZAKI, Tadahiro OHMI

    Technical Report of IECE, SDM95-56, ICD95-65　95　(194)　21-27　1995/07

    Publisher: The Institute of Electronics, Information and Communication Engineers

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    Mechanisms for SiH_4 decomposition on Si surfaces are not well understood. Previously, we evaluated the thermal decomposition characteristics of SiH_4 using the various dilution gases and various dilution rates on four kinds of Si surfaces (non-doped Si, SiO_2, n^+Si, and p^+Si) and two halogen terminated surfaces (F, Cl). The results indicated that even for the same gases, the starting decomposition temperature, decomposition rate and the decomposition mechanisms as well as activation energies were quite different. In general, the energy level of solid surface, ionization potential of gas molecule, and electron affinity were widely known. In this report, we present the mechanisms for SiH_4 decomposition on various Si surfaces based on these and the experimental results.

  115. Advanced Gas Technology for Semiconductor and Liquid Crystal Process in the 21st Century

    Tadahiro OHMI, Yasuyuki SHIRAI, Masaki NARAZAKI, Tsutomu Kojima

    OSK-Semiconductor Seminar (Osaka Sanso Kogyo K. K.)　55-74　1995/06

  116. Metal Fume-Free Welding Technology for Advanced Semiconductor Grade Gas Delivery System Peer-reviewed

    Tadahiro Ohmi, Shinji Miyoshi, Yasuyuki Shirai, Tsutomu Kojima

    Journal of the Electrochemical Society　142　(7)　2362-2372　1995

    DOI： 10.1149/1.2044301 　

    ISSN： 0013-4651

    eISSN： 1945-7111

  117. Evaluation of thermal decomposition characteristics of active specialty gases on various metal surfaces using FT-IR method

    Yasuyuki Shirai, Seok kiu Lee, Shinji Miyoshi, Tadahiro Ohmi

    Institute of Environmental Sciences - Proceedings, Annual Technical Meeting　17-21　1995

    ISSN： 0073-9227

  118. Specialty Gas Distribution System Free form Corrosion, Gas Decomposition and Reaction-Perfect Cr2O3 Treated Tubing System

    Yasuyuki Shirai, Tsutomu Kojima, Masaki Narazaki, Tadahiro Ohmi

    Microcontamination '94, San Jose, California　272-281　1994/10

  119. Corrosion Resistant and Catalytic Properties of Fluorine Passivated Surface

    M. Maeno, H. Izumi, Y. Nakagawa, S. Miyoshi, Y. Shirai, Tadahiro Ohmi

    Extended Abstracts, 186th Electrochemical Society Meeting, Florida　179　278　1994/10

  120. Ultraclean Gas Distribution Technology

    Y. Shirai, S. Miyoshi, S. Takahashi, T. Kojima, Tadahiro Ohmi

    International Conference on AMDP(Advanced Microelectronic Devices and Processing), Sendai　517-522　1994/03

  121. Anti-Corrosive and Anti-Catalytic Cr2O3 Treated Gas Tubing System

    Y. Shirai, S. Miyoshi, T. Kojima, T. Ohmi

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings　217-218　1994

    DOI： 10.1109/ISSM.1994.729461 　

    ISSN： 1523-553X

  122. Corrosion-Free Stainless Steel Tube Welding

    S. Miyoshi, Y. Shirai, M. Narazaki, T. Ohmi

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings　215-216　1994

    DOI： 10.1109/ISSM.1994.729460 　

    ISSN： 1523-553X

Show all ︎Show first 5

Misc. 2

  1. Engineering field application of micro-nano-bubble water

    Yasuyuki Shirai

    Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering　83　(7)　623-626　2017

    DOI： 10.2493/jjspe.83.623 　

    ISSN： 0912-0289

  2. Influence of the Great East Japan Earthquake in Fluctuation Free Facility for New Information Industry, Tohoku University

    Yasuyuki SHIRAI, Fuminobu IMAIZUMI, Masaru SHIRATORI, Tadahiro OHMI

    Journal of the Vacuum Society of Japan　55　(9)　409-412　2012

    Publisher: The Vacuum Society of Japan

    DOI： 10.3131/jvsj2.55.409 　

    ISSN： 1882-2398

    eISSN： 1882-4749

Industrial Property Rights 100

  1. 不飽和炭化水素の取り扱い方法および取り扱い装置

    白井 泰雪, 竹田 巌

    特許第7058846号

    Property Type: Patent

  2. 遠心式薄膜蒸発器および光学材料用脂環構造含有重合体の製造方法

    白井 泰雪, 渡辺 昇

    特許第6876291号

    Property Type: Patent

  3. オゾン水の製造法

    白井 泰雪, 酒井 健, 自在丸 隆行

    特許第6635459号

    Property Type: Patent

  4. 加熱オゾン水の製造方法、加熱オゾン水および半導体ウエハ洗浄液

    白井 泰雪, 酒井 健, 自在丸 隆行

    特許第6629494号

    Property Type: Patent

  5. 遠心式薄膜蒸発器及び光学材料用脂環構造含有重合体の製造方法

    大見 忠弘, 白井 泰雪, 林 昌彦, 渡辺 昇

    特許6416486

    Property Type: Patent

  6. 気化器

    大見 忠弘, 白井 泰雪, 永瀬 正明, 山下 哲, 日高 敦志, 土肥 亮介, 西野 功二, 池田 信一, 平尾 圭志

    特許第5913888号

    Property Type: Patent

  7. メタルガスケット

    大見 忠弘, 白井 泰雪, 佐藤 広嗣, 内野 良則, 岩城 征道

    特許第5638401号

    Property Type: Patent

  8. 噴霧ノズル及びミスト帯電防止方法

    大見 忠弘, 白井 泰雪, 植村 聡

    特許第5622139号

    Property Type: Patent

  9. 調整弁装置

    池田 信一, 山路 道雄, 谷川 毅, 金子 裕是, 八木 靖司, 小野 裕司, 大見 忠弘, 白井 泰雪

    特許第5616029号

    Property Type: Patent

  10. Metal Gasket

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; SATO KOJI ; UCHINO YOSHINORI ; IWAKI MASAMICHI

    8,807,573

    Property Type: Patent

  11. エッチング方法及びLSIデバイスの製造方法、並びに3D集積化LSIデバイス製造方法

    酒井 健, 吉川 和博, 吉田 達朗, 白井 泰雪

    特許第5561811号

    Property Type: Patent

  12. VAPORIZER

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; NAGASE MASAAKI ; YAMASHITA SATORU ; HIDAKA ATSUSHI ; DOHI RYOUSUKE ; NISHINO KOUJI ; IKEDA NOBUKAZU ; HIRAO KEIJI

    8,724,974

    Property Type: Patent

  13. Al alloy member, electronic device manufacturing apparatus, and method of manufacturing an anodic oxide film coated al alloy member

    OHMI TADAHIRO ; KITANO MASAFUMI ; TAHARA MINORU ; ITO HISAKAZU ; SHIRAI KOTA ; SAEKI MASAYUKI

    8,679,640

    Property Type: Patent

  14. 排ガス処理方法及び排ガス処理装置

    鈴木 克昌, 迫田 薫, 石原 良夫, 大見 忠弘, 白井 泰雪

    特許第5498752号

    Property Type: Patent

  15. MICROWAVE PLASMA PROCESSING APPARATUS, DIELECTRIC WINDOW FOR USE IN THE MICROWAVE PLASMA PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING THE DIELECTRIC WINDOW

    OHMI TADAHIRO ; HIRAYAMA MASAKI ; GOTO TETSUYA ; SHIRAI YASUYUKI ; KITANO MASAFUMI ; WATANUKI KOHEI ; MATSUOKA TAKAAKI ; MURAKAWA SHIGEMI

    8,573,151

    Property Type: Patent

  16. RESIN MOLDING DEVICE

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; YAMANAKA JIRO ; IWAHARA KENGO ; FUKAE KOUJI

    8,562,320

    Property Type: Patent

  17. 金属部材の保護膜構造及び保護膜構造を用いた金属部品並びに保護膜構造を用いた半導体又は平板ディスプレイ製造装置

    大見 忠弘, 白井 泰雪, 森永 均, 河瀬 康弘, 北野 真史, 水谷 文一, 石川 誠, 岸 幸男

    特許第5382677号

    Property Type: Patent

  18. 金属酸化物膜、積層体、金属部材並びにその製造方法

    大見 忠弘, 白井 泰雪, 森永 均, 河瀬 康弘, 北野 真史, 水谷 文一, 石川 誠

    特許第5358799号

    Property Type: Patent

  19. 樹脂成型装置

    大見 忠弘, 白井 泰雪, 山中 二朗, 岩原 健吾, 深江 康治

    特許第5334082号

    Property Type: Patent

  20. Metal Gasket

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; SATO KOJI ; NOGUCHI MASAYUKI ; YOSHIDA TSUTOMU ; MURAMATSU AKIRA ; KUMAKI SATOSHI ; KUWAMURA YUKI

    8,485,534

    Property Type: Patent

  21. 湿式デシカント空調機

    大見 忠弘, 白井 泰雪, 永坂 茂之, 菅原 一彰, 松本 尚史, 佐々木 央, 植村 聡

    特許第5294191号

    Property Type: Patent

  22. Long Life Welding Electrode and Its Fixing Structure Welding Head and Welding Method

    OHMI TADAHIRO ; NITTA TAKAHISA ; SHIRAI YASUYUKI ; NAKAMURA OSAMU

    8,420,974

    Property Type: Patent

  23. 光電変換素子およびそれの製造方法ならびに製造装置

    大見 忠弘, 寺本 章伸, 森本 明大, 白井 泰雪

    特許第5239003号

    Property Type: Patent

  24. メタルガスケット

    大見 忠弘, 白井 泰雪, 佐藤 広嗣, 野口 勝通, 吉田 勉, 村松 晃, 熊木 聡, 桑村 幸

    特許第5204550号

    Property Type: Patent

  25. 陰極体の製造方法

    大見 忠弘, 後藤 哲也, 白井 泰雪

    特許第5177721号

    Property Type: Patent

  26. 射出成形金型用水供給システム

    別所 正博, 上地 哲男, 戸田 直樹, 大見 忠弘, 白井 泰雪

    特許第5161467号

    Property Type: Patent

  27. 環境制御室の構成部材、環境制御室の構成部材の製造方法

    大見 忠弘, 白井 泰雪, 勝部 定徳, 内田 晶夫, 斉藤 雄二, 原田 正世, 木下 正文

    特許第5152744号

    Property Type: Patent

  28. HEAT RESISTING VACUUM INSULATING MATERIAL AND HEATING DEVICE

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; KOBAYASHI SADAO ; WAKAYAMA YOSHIHIDE ; UEKADO KAZUTAKA

    8,299,403

    Property Type: Patent

  29. Fluorescent Lamp

    OHMI TADAHIRO ; SHIRAI YASUYUKI

    8,294,352

    Property Type: Patent

  30. 蒸着装置

    大見 忠弘, 白井 泰雪, 森本 明大

    特許第5107500号

    Property Type: Patent

  31. 低締付金属ガスケット

    大見 忠弘, 白井 泰雪, 油谷 康, 村松 晃, 野口 勝通, 佐藤 広嗣, 熊木 聡

    特許第5084617号

    Property Type: Patent

  32. Method of manufacturig bellows

    YOSHIDA TSUTOMU ; OHMI TADAHIRO ; SHIRAI YASUYUKI ; KITANO MASAFUMI

    8,250,966

    Property Type: Patent

  33. 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法

    大見 忠弘, 須川 成利, 平山 昌樹, 白井 泰雪

    特許第5068402号

    Property Type: Patent

  34. 陰極体

    大見 忠弘, 後藤 哲也, 白井 泰雪

    特許第5024885号

    Property Type: Patent

  35. ベローズの製造方法

    吉田 勉, 大見 忠弘, 白井 泰雪, 北野 真史

    特許第5026239号

    Property Type: Patent

  36. METAL OXIDE FILM, LAMINATE, METAL MEMBER AND PROCESS FOR PRODUCING THE SAME

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; MORINAGA HITOSHI ; KAWASE YASUHIRO ; KITANO MASAFUMI ; MIZUTANI FUMIKAZU ; ISHIKAWA MAKOTO

    8,206,833

    Property Type: Patent

  37. 金属酸化物膜、積層体、金属部材並びにその製造方法

    大見 忠弘, 白井 泰雪, 森永 均, 河瀬 康弘, 北野 真史, 水谷 文一, 石川 誠

    特許第5019391号

    Property Type: Patent

  38. 加熱装置

    大見 忠弘, 白井 泰雪, 小林 貞雄, 若山 恵英, 上門 一登

    特許第4976047号

    Property Type: Patent

  39. Low-Compression Force Metal Gaskets

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; ABURATANI YASUSHI ; MURAMATSU AKIRA ; NOGUCHI MASAYUKI ; SATO KOUJI ; KUMAKI SATOSHI

    8,146,924

    Property Type: Patent

  40. Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; IKEDA NOBUKAZU ; IDETA EIJI ; MORIMOTO AKIHIRO ; OGUSHI TETSUTARO ; KONISHI TAKEHISA

    8,137,787

    Property Type: Patent

  41. Liquid crystal display and light guide plate

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; TAKEHISA KIWAMU ; MATSUMOTO MITSUO ; IKARI TOKUO ; SATO TOSHIAKI ; ONISHI IKUO ; NAKAZATO ETSUO ; YAMADA YUICHIRO ; SHINOMIYA TOKIHIKO ; ISHIZUMI TAKASHI ; AJICHI YUHSAKU

    8,130,340

    Property Type: Patent

  42. Protective Film Structure of Metal Member, Metal Component Employing Protective Film Structure, and Equipment for Producing Semiconductor or Flat-Plate Display Employing Protective Film Structure

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; MORINAGA HITOSHI ; KAWASE YASUHIRO ; KITANO MASAFUMI ; MIZUTANI FUMIKAZU ; ISHIKAWA MAKOTO ; KISHI YUKIO

    8,124,240

    Property Type: Patent

  43. 液晶ディスプレイ

    大見 忠弘, 白井 泰雪, 武久 究, 松本 光郎, 猪狩 徳夫, 佐藤 寿昭, 大西 伊久雄, 中里 悦男, 山田 祐一郎, 四宮 時彦, 石住 隆司, 味地 悠作

    特許第4895158号

    Property Type: Patent

  44. 不活性消火ガスおよび不活性消火ガスを用いた消火具

    大見 忠弘, 白井 泰雪, 千葉 省吾, 福田 宗治, 斉藤 賢司, 花岡 秀夫, 雪田 浩二, 滝川 裕弘, 岸田 好晴

    特許第4871489号

    Property Type: Patent

  45. 液晶ディスプレイ及びバックライトユニット

    大見 忠弘, 武久 究, 白井 泰雪, 棚橋 直樹

    特許第4852695号

    Property Type: Patent

  46. 液晶ディスプレイ用バックライトユニット

    大見 忠弘, 白井 泰雪, 武久 究

    特許第4848511号

    Property Type: Patent

  47. 気液混合洗浄装置及び気液混合洗浄方法

    横井 生憲, 阿部 俊和, 白井 泰雪, 大見 忠弘

    特許第4830091号

    Property Type: Patent

  48. 液晶ディスプレイ用バックライトユニット

    大見 忠弘, 白井 泰雪, 武久 究

    特許第4797161号

    Property Type: Patent

  49. 長寿命の溶接電極及びその溶接ヘッド

    大見 忠弘, 新田 雄久, 白井 泰雪, 中村 修

    特許第4743897号

    Property Type: Patent

  50. 配管突合せ溶接用位置決め治具

    大見 忠弘, 白井 泰雪, 岸田 好晴, 松岡 秀俊, 井川 哲二, 新藤 隆彦, 湯川 真邦, 三好 伸二

    特許第4737739号

    Property Type: Patent

  51. Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; IKEDA NOBUKAZU ; IDETA EIJI ; MORIMOTO AKIHIRO ; OGUSHI TETSUTARO ; KONISHI TAKEHISA

    7,935,385

    Property Type: Patent

  52. 半導体装置およびその製造方法

    大見 忠弘, 須川 成利, 平山 昌樹, 白井 泰雪

    特許第4713752号

    Property Type: Patent

  53. 空気殺菌脱臭システム

    大見 忠弘, 白井 泰雪, 神戸 正純, 三浦 邦夫, 稲毛 亮太, 高塚 威, 阿部 信志, 藤山 寛, 青山 健治

    特許第4693422号

    Property Type: Patent

  54. ポンプおよびポンプ部材の製造方法

    大見 忠弘, 白井 泰雪, 北野 真史

    特許第4694771号

    Property Type: Patent

  55. Backlight Unit for Liquid Crystal Display

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; TAKEHISA KIWAMU

    7,787,076

    Property Type: Patent

  56. 回転式シリコンウエハ洗浄装置

    大見 忠弘, 白井 泰雪, 藤田 巧, 皆見 幸男, 池田 信一, 森本 明弘, 川田 幸司

    特許第4554146号

    Property Type: Patent

  57. 紫外ビーム発生装置及び蛍光体特性評価システム

    大見 忠弘, 武久 究, 白井 泰雪, 棚橋 直樹

    特許第4528969号

    Property Type: Patent

  58. マイクロ波プラズマ処理装置、それに用いる誘電体窓部材および誘電体窓部材の製造方法

    大見 忠弘, 平山 昌樹, 後藤 哲也, 白井 泰雪, 北野 真史, 綿貫 耕平, 松岡 孝明, 村川 恵美

    特許第4524354号

    Property Type: Patent

  59. 気体温湿度調整用装置及び調整方法

    大見 忠弘, 平山 昌樹, 白井 泰雪, 花岡 秀夫, 本間 健, 鈴木 宏和, 山崎 喜郎, 大久保 義典

    特許第4521847号

    Property Type: Patent

  60. Dielectric film and formation method thereof, semiconductor device, non-volatile semiconductor memory device, and fabrication method for a semiconductor device

    OHMI TADAHIRO ; SUGAWA SHIGETOSHI ; HIRAYAMA MASAKI ; SHIRAI YASUYUKI

    7,718,484

    Property Type: Patent

  61. 重合体成型装置用スクリュー及びこれを用いた重合体成型装置

    大見 忠弘, 白井 泰雪, 棚橋 直樹

    特許第4510417号

    Property Type: Patent

  62. 雰囲気制御された樹脂の接合装置,接合方法および接合された樹脂部材

    大見 忠弘, 白井 泰雪, 塚本 和巳

    特許第4485828号

    Property Type: Patent

  63. 金属ガスケット

    大見 忠弘, 白井 泰雪, 佐藤 広嗣, 吉田 勉, 熊木 聡, 桑村 幸

    1377677

    Property Type: Design

  64. Fluorescent Lamp and Method of Manufacturing same

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; MORIMOTO AKIHIRO

    7,501,764

    Property Type: Patent

  65. 高効率装置冷却システム及び冷却方法

    大見 忠弘, 平山 昌樹, 白井 泰雪, 花岡 秀夫, 鈴木 宏和, 山崎 喜郎, 大久保 義典

    特許第4346776号

    Property Type: Patent

  66. 蛍光管及びその製造方法

    大見 忠弘, 白井 泰雪, 森本 明大

    特許第4344355号

    Property Type: Patent

  67. 気液接触装置

    大見 忠弘, 白井 泰雪, 寺田 功, 美濃部 智, 岡部 稔久, 森 直樹, 伊藤 宏, 若山 恵英, 花岡 秀夫

    特許第4330843号

    Property Type: Patent

  68. 製造装置システム

    大見 忠弘, 白井 泰雪, 北野 真史

    特許第4313138号

    Property Type: Patent

  69. レーザ発振装置、露光装置及びデバイスの製造方法

    大見 忠弘, 平山 昌樹, 伊野 和英, 篠原 壽邦, 白井 泰雪, 田中 信義, 鈴木 伸昌, 大沢 大

    特許第4295855号

    Property Type: Patent

  70. クリーンルームの局部消火システム

    大見 忠弘, 白井 泰雪, 千葉 省吾, 福田 宗治, 斉藤 賢司, 花岡 秀夫, 雪田 浩二, 滝川 裕弘, 岸田 好晴

    特許第4247468号

    Property Type: Patent

  71. Dielectric Film and Method of Forming ItSemiconductor Device Non-Volatile Semiconductor Memory Deviceand Production Method for semiconductor device

    OHMI TADAHIRO ; SUGAWA SHIGETOSHI ; HIRAYAMA MASAKI ; SHIRAI YASUYUKI

    7,439,121

    Property Type: Patent

  72. ガス回収方法

    白井 泰雪, 橋本 泰司, 伊野 和英, 大見 忠弘, 新田 雄久

    特許第4159004号

    Property Type: Patent

  73. フッ化不働態処理が施された溶接部材の溶接方法および再フッ化不働態処理方法ならびに溶接部品

    大見 忠弘, 新田 雄久, 白井 泰雪, 中村 修

    特許第4125406号

    Property Type: Patent

  74. 空気冷却方法

    大見 忠弘, 白井 泰雪, 小林 貞雄, 寺田 功, 岡部 稔久, 谷口 隆志, 森 直樹, 伊藤 宏, 若山 恵英, 稲葉 仁, 斎藤 一夫, 小林 菊治, 花岡 秀夫

    特許第4033677号

    Property Type: Patent

  75. 酸化アルミニウム不働態膜の形成方法及び溶接方法並びに接流体部材及び流体供給・排気システム

    大見 忠弘, 新田 雄久, 白井 泰雪

    特許第4016073号

    Property Type: Patent

  76. プラズマ反応炉システムの運転制御方法及び装置

    大見 忠弘, 須川 成利, 平山 昌樹, 白井 泰雪, 堀 正樹

    特許第3982670号

    Property Type: Patent

  77. クリーンルーム天井構造

    大見 忠弘, 白井 泰雪, 花岡 秀夫, 小林 菊治, 本間 健, 柴田 邦博, 斎藤 一夫, 工藤 正光, 冨川 忍

    特許第3963729号

    Property Type: Patent

  78. 生産設備用給電方式

    大見 忠弘, 白井 泰雪, 福田 宗治, 大沢 高雄, 南川 智宣, 雪田 浩二, 斎藤 賢司

    特許第3959375号

    Property Type: Patent

  79. クリーンルームの内装システム

    大見 忠弘, 白井 泰雪, 花岡 秀夫, 小林 菊治, 本間 健, 柴田 邦博, 斎藤 一夫, 工藤 正光, 冨川 忍, 西連寺 昭

    特許第3945631号

    Property Type: Patent

  80. 放電電極並びにエキシマレーザー発振装置及びステッパー

    大見 忠弘, 白井 泰雪, 佐野 直人

    特許第3874123号

    Property Type: Patent

  81. 散水装置

    大見 忠弘, 白井 泰雪, 寺田 功, 美濃部 智, 岡部 稔久, 森 直樹, 伊藤 宏, 若山 恵英, 花岡 秀夫

    特許第3848896号

    Property Type: Patent

  82. クリーンルームにおける消火方法及びその装置

    大見 忠弘, 白井 泰雪, 今井 捷二, 福田 宗治, 西村 容太郎, 河西 正隆

    特許第3832612号

    Property Type: Patent

  83. エキシマレーザー発振装置のガス供給方法

    大見 忠弘, 白井 泰雪, 溝上 敏, 佐野 直人

    特許第3818524号

    Property Type: Patent

  84. アルマイト処理によって形成されたアルミナ膜を有するレーザーチャンバーを備えたエキシマレーザー発振装置

    大見 忠弘, 白井 泰雪, 佐野 直人

    特許第3809879号

    Property Type: Patent

  85. エキシマレーザー発振装置のガス供給装置

    大見 忠弘, 白井 泰雪, 溝上 敏, 佐野 直人

    特許第3782151号

    Property Type: Patent

  86. Semiconductor Device and its manufacturing method

    OHMI TADAHIRO ; SUGAWA SHIGETOSHI ; HIRAYAMA MASAKI ; SHIRAI YASUYUKI

    6,975,018

    Property Type: Patent

  87. エキシマレーザー発振装置及びステッパ装置

    大見 忠弘, 白井 泰雪, 佐野 直人

    特許第3745822号

    Property Type: Patent

  88. Long Life Welding Electrode and Its Fixing Structure Welding Head and Welding Method

    OHMI TADAHIRO ; NITTA TAKAHISA ; SHIRAI YASUYUKI ; NAKAMURA OSAMU

    6,940,034

    Property Type: Patent

  89. Exposure apparatus, and device production method

    OHMI TADAHIRO ; OSAWA HIROSHI ; TANAKA NOBUYOSHI ; INO KAZUHIDE ; SHINOHARA TOSHIKUNI ; SHIRAI YASUYUKI ; HIRAYAMA MASAKI

    6,847,672

    Property Type: Patent

  90. Welding Method for Fluorine-Passivated Member for Welding Fluorine-Passivated Method After Being Weld and Welded Parts

    OHMI TADAHIRO ; NITTA TAKAHISA ; SHIRAI YASUYUKI ; NAKAMURA OSAMU

    6,818,320

    Property Type: Patent

  91. Gas Supply Path Structure Gas Supply Method Laser Oscillating Apparatus Exposure Apparatus and Device Production Method

    OHMI TADAHIRO, OSAWA HIROSHI, TANAKA NOBUYOSHI, INO KAZUHIDE, SHINOHARA TOSHIKUNI, SHIRAI YASUYUKI, HIRAYAMA MASAKI

    6,804,285

    Property Type: Patent

  92. Air Cooling Device and Air Cooling Method

    OHMI TADAHIRO ; SHIRAI YASUYUKI ; KOBAYASHI SADAO ; TERADA ISAO ; OKABE TOSHIHISA ; TANIGUCHI TAKASHI ; MORI NAOKI ; ITOH HIROMU ; WAKAYAMA YOSHIHIDE ; INABA HITOSHI ; SAITO KAZUO ; KOBAYASHI KIKUJI ; HANAOKA HIDEO

    6,748,751

    Property Type: Patent

  93. リードフレーム及びリードフレーム用素材

    大見 忠弘, 池田 信一, 山路 道雄, 篠原 努, 森本 明弘, 白井 泰雪

    特許第3444981号

    Property Type: Patent

  94. オゾン、水素発生方法及び発生装置

    大見 忠弘, 澤本 勲, 笠間 泰彦, 三森 健一, 今岡 孝之, 山中 弘次, 白井 泰雪

    特許第3432136号

    Property Type: Patent

  95. Welding Technology for Forming Chromium Oxide Passivation Film on Weld and Gas Supplying System Used at Time of Welding

    OHMI TADAHIRO ; NITTA TAKAHISA ; SHIRAI YASUYUKI ; NAKAMURA OSAMU

    6,563,072

    Property Type: Patent

  96. Long Life Welding Electrode and Its Fixing Structure Welding Head and Welding Method

    OHMI TADAHIRO;NITTA TAKAHISA;SHIRAI YASUYUKI ; NAKAMURA OSAMU

    6,462,298

    Property Type: Patent

  97. Gas Recovering Apparatus

    OHMI TADAHIRO;NITTA TAKAHISA;SHIRAI YASUYUKI;HASHIMOTO TAIJI;INO KAZUHIDE

    6,436,353

    Property Type: Patent

  98. Excimer Laser Generator Provided with a Laser Chamber with a Fluoride Passivated Inner Surface

    OHMI TADAHIRO;SHIRAI YASUYUKI;SANO NAOTO

    6,215,806

    Property Type: Patent

    More details Close

    An excimer laser generating system includes a laser chamber whose inner surface is covered with a fluorine-passivated surface. Preferably the surfaces of a blower and heat exchanger disposed in the laser chamber are also covered with a fluorine-passivated surface. The fluorine-passivated surface may be formed of a wide variety of materials including an aluminum oxide film a fluoride film containing aluminum fluoride and magnesium fluoride iron fluoride and nickel fluoride. Preferably the excimer laser generation system includes a gas supply system having an inert gas purging system so that gas sources can be replaced without exposing the inside of gas supply pipes to atmosphere. With the above arrangement the excimer laser generating system can generate a laser beam pulse whose energy and shape are maintained constant for a long period of operation time without encountering serious degradation. The invention also provides a high-reliability step-and-repeat exposure apparatus using the above excimer laser generating system capable of exposing a very fine pattern.

  99. Discharge Electrode Shape-Restoration Thereof Excimer Laser Oscillator and Stepper

    Tadahiro Ohmi;Naoto Sano;Yasuyuki Shirai

    5,923,693

    Property Type: Patent

    More details Close

    A discharge electrode for an excimer laser oscillator according to the present invention contains oxygen at a content of not more than 10 ppm and a method of restoring the shape of a discharge electrode according to the present invention comprises introducing an inert gas into a laser chamber and conducting discharge for several seconds.

  100. Lead Frame and Lead Frame Material

    Tadahiro Ohmi, Nobukazu Ikeda, Michio Yamaji, Tsutomu Shinohara, AkihiroMorimoto, Yasuyuki Shirai

    5,530,283

    Property Type: Patent

    More details Close

    An object of the present invention is to provide a lead frame and a material for lead frame which insure excellent bonding and enables substantial reduction of time for production because such processes as plating are not required and furthermore are excellent in abration resistance. The present invention is characterized in that a silver layer having a construction where amplitude of a refracted ray refracted on the (200) surface is 1/3 or more of the amplitude of refracted X ray refracted on the (111) surface comprises an outer lead section of the base material for the lead frame. The base material is preferably copper copper-alloy iron or iron alloy. The silver layer is formed for instance by means of silver plating and the thickness is preferably in a range from 8 m to 30 m. An intermediate layer may be provided between a surface of the base material and the silver layer.

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Research Projects 1

  1. Balanced Full CMOS LSI for Ultra High Performance and Ultra Low PowerConsumption

    OHMI Tadahiro, SHIRAI Yasuyuki, KITANO Masafumi, TERAMOTO Akinobu

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Specially Promoted Research

    Category: Grant-in-Aid for Specially Promoted Research

    Institution: Tohoku University

    2006 - 2008