Details of the Researcher

PHOTO

Stephaneyu Matsushita
Section
Graduate School of Engineering
Job title
Associate Professor
Degree

  • 博士（理学）（東北大学）

  • 修士（理学）（東北大学）

Research History 3

  • 2022/04 - Present
    Tohoku University　Graduate School of Engineering　Institute of Engineering education

  • 2020/04 - 2022/03
    Tohoku University　Advanced Institute for Materials Research　Assistant Prof.

  • 2015 - 2020/03
    Tohoku University　Graduate School of Science Department of Physics　Assistant Prof.

Research Interests 4

  • Entreprenurship

  • Higher education

  • トポロジカル絶縁体

  • 熱電効果

Research Areas 1

  • Nanotechnology/Materials / Thin-film surfaces and interfaces /

Awards 4

  1. 東北大学青葉理学振興会賞

    2015/03　東北大学青葉理学振興会

  2. 東北大学総長賞

    2015/03　東北大学

  3. 第32回表面科学学術会 講演奨励賞（スチューデント賞）

    2013/05　日本表面科学会

  4. 東北大学理学研究科物理学専攻賞

    2012/03　東北大学

Papers 17

  1. Magnetic field induced Anderson localization in the orbital-selective antiferromagnet BaMn2Bi2

    Takuma Ogasawara, Kim-Khuong Huynh, Stephane Yu Matsushita, Motoi Kimata, Time Tahara, Takanori Kida, Masayuki Hagiwara, Denis Arčon, Katsumi Tanigaki

    Physical Review B　106　(4)　2022/07/25

    Publisher: American Physical Society (APS)

    DOI： 10.1103/physrevb.106.l041114 　

    ISSN： 2469-9950

    eISSN： 2469-9969

    More details Close

    We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated $3d$-derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the $d_{xy}$-derived band dominate the transport properties and exhibit the Anderson localization, whereas other $3d$ bands show clear Mott-like behaviors with their spins ordered into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to their weak charge coupling.

  2. サンガク レンケイ キカク 「 コンナ 『 ケンキュウ ト キョウイク 』 ガ オモシロイ 」 アントレプレナー キョウイク

    70　(10)　496-499　2022

    Publisher:

    ISSN： 0386-2151

  3. Large negative magnetoresistance in the antiferromagnet BaMn2Bi2

    Takuma Ogasawara, Kim-Khuong Huynh, Time Tahara, Takanori Kida, Masayuki Hagiwara, Denis Arcon, Motoi Kimata, Stephane Yu Matsushita, Kazumasa Nagata, Katsumi Tanigaki

    PHYSICAL REVIEW B　103　(12)　2021/03

    DOI： 10.1103/PhysRevB.103.125108 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  4. Large-proximity-induced anomalous Hall effect in Bi2-xSbxTe3-ySey/Cr2Ge2Te6 heterostructure prepared by film transfer method

    Kazumasa Nagata, Stephane Yu Matsushita, Xing-Chen Pan, Kim-Khuong Huynh, Katsumi Tanigaki

    PHYSICAL REVIEW MATERIALS　5　(2)　2021/02

    DOI： 10.1103/PhysRevMaterials.5.024208 　

    ISSN： 2475-9953

  5. Large thermopower in topological surface state of Sn-BSTS topological insulators: Thermoelectrics and energy-dependent relaxation times

    Stephane Yu Matsushita, Kakeru Ichimura, Khuong Kim Huynh, Katsumi Tanigaki

    PHYSICAL REVIEW MATERIALS　5　(1)　2021/01

    DOI： 10.1103/PhysRevMaterials.5.014205 　

    ISSN： 2475-9953

  6. Anisotropic surface phonon dispersion of a deuterium-terminated Si(110)-(1 × 1) surface studied by high-resolution electron-energy-loss spectroscopy and first-principles calculations: Isotope effect Peer-reviewed

    Kawamoto, E., Matsushita, S.Y., Okada, Y., Hu, C., Watanabe, K., Haga, K., Yamada, T., Suto, S.

    Surface Science　692　121527-121527　2020/02

    Publisher: Elsevier BV

    DOI： 10.1016/j.susc.2019.121527 　

    ISSN： 0039-6028

  7. Ultrathin films of three-demensional topological insulators by vapor-phase epitaxy: Surface dominant transport in a wide temperature range as revealed by measurements of the Seebeck effect Peer-reviewed

    Stephane Yu Matsushita, Kim-Khuong Huynh, Katsumi Tanigaki

    Physical Review B　99　(19)　195302　2019/05

    DOI： 10.1103/PhysRevB.99.195302 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  8. Negative and positive magnetoresistance in the itinerant antiferromagnet BaMn2Pn2 (Pn=P, As, Sb, and Bi) Peer-reviewed

    Kim-Khuong Huynh, Takuma Ogasawara, Keita Kitahara, Yoichi Tanabe, Stephane Yu Matsushita, Time Tahara, Takanori Kida, Masayuki Hagiwara, Denis Arcon, Katsumi Tanigaki

    Physical Review B　99　(19)　195111　2019/05

    Publisher: American Physical Society (APS)

    DOI： 10.1103/PhysRevB.99.195111 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  9. Quantum Hall effect of Dirac surface states of as-grown single crystal flakes in Sn-0.02-Bi1.08Sb0.9Te2S without gate control Peer-reviewed

    Kakeru Ichimura, Stephane Yu Matsushita, Kim-Khuong Huynh, Katsumi Tanigaki

    APPLIED PHYSICS LETTERS　115　(5)　052104　2019

    DOI： 10.1063/1.5112120 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  10. Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states Peer-reviewed

    Stephane Yu Matsushita, Khuong Kim Huynh, Harukazu Yoshino, Ngoc Han Tu, Yoichi Tanabe, Katsumi Tanigaki

    PHYSICAL REVIEW MATERIALS　1　(5)　054202　2017/10

    DOI： 10.1103/PhysRevMaterials.1.054202 　

    ISSN： 2475-9953

  11. Effects of the deposition rate on growth modes of Ag islands on the hydrogen-terminated Si(111)-(1x1) surface: The role of surface energy and quantum size effect Peer-reviewed

    Jungmin Kang, Toyoaki Eguchi, Erina Kawamoto, Stephane Yu Matsushita, Kenya Haga, Shino Kanagawa, Andrzej Wawro, Ryszard Czajka, Hiroki Kato, Shozo Suto

    JOURNAL OF APPLIED PHYSICS　122　(9)　095303　2017/09

    DOI： 10.1063/1.5000699 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  12. Anisotropic electronic band structure of intrinsic Si(110) studied by angle-resolved photoemission spectroscopy and first-principles calculations Peer-reviewed

    Stephane Yu Matsushita, Akari Takayama, Erina Kawamoto, Chunping Hu, Satoshi Hagiwara, Kazuyuki Watanabe, Takashi Takahashi, Shozo Suto

    PHYSICAL REVIEW B　96　(12)　2017/09

    DOI： 10.1103/PhysRevB.96.125302 　

    ISSN： 2469-9950

    eISSN： 2469-9969

  13. Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition Peer-reviewed

    Ngoc Han Tu, Yoichi Tanabe, Yosuke Satake, Khuong Kim Huynh, Phuoc Huu Le, Stephane Yu Matsushita, Katsumi Tanigaki

    NANO LETTERS　17　(4)　2354-2360　2017/04

    DOI： 10.1021/acs.nanolett.6b05260 　

    ISSN： 1530-6984

    eISSN： 1530-6992

  14. Surface phonon dispersion on hydrogen-terminated Si(110)-(1 x 1) surfaces studied by first-principles calculations Peer-reviewed

    Stephane Yu Matsushita, Chunping Hu, Erina Kawamoto, Hiroki Kato, Kazuyuki Watanabe, Shozo Suto

    JOURNAL OF CHEMICAL PHYSICS　143　(21)　214702　2015/12

    DOI： 10.1063/1.4936656 　

    ISSN： 0021-9606

    eISSN： 1089-7690

  15. Morphology and atomic structure of hydrogen-terminated Si(110)-(1 x 1) surfaces prepared by a wet chemical process Peer-reviewed

    Stephane Yu Matsushita, Erina Kawamoto, Kenya Haga, Taro Yamada, Shozo Suto

    SURFACE SCIENCE　632　135-141　2015/02

    DOI： 10.1016/j.susc.2014.10.003 　

    ISSN： 0039-6028

    eISSN： 1879-2758

  16. Anisotropic surface phonon dispersion of the hydrogen-terminated Si(110)-(1 x 1) surface: One-dimensional phonons propagating along the glide planes Peer-reviewed

    Stephane Yu Matsushita, Kazuki Matsui, Hiroki Kato, Taro Yamada, Shozo Suto

    JOURNAL OF CHEMICAL PHYSICS　140　(10)　104709　2014/03

    DOI： 10.1063/1.4867997 　

    ISSN： 0021-9606

    eISSN： 1089-7690

  17. Preparation of clean and well-ordered hydrogen-terminated Si(1 1 0)-(1 × 1) surfaces and the measurements of vibrational modes Peer-reviewed

    S. Suto, K. Matsui, S. Y. Matsushita, H. Kato, H. Nakaya, T. Taoka, A. Kasuya, T. Yamada

    Applied Surface Science　267　90-92　2013/02/15

    DOI： 10.1016/j.apsusc.2012.07.153 　

    ISSN： 0169-4332

Show all ︎Show first 5

Misc. 79

  1. Discover “Who do you want to grow into?” before thinking “What do you want to be?”

    Change Forward 2022, HASSO PLATTNER Institute of Design at Stanford.　2022

  2. Nonlinear etching process of Si(110) revealed by Kuramoto-Sivashinsky equation

    芳賀健也, 川本絵里奈, 川勝年洋, 松下ステファン悠, 山田太郎, 須藤彰三

    日本物理学会講演概要集(CD-ROM)　77　(1)　2022

    ISSN： 2189-079X

  3. First-Principles Study on the Surface State of the Three-Dimensional Topological Insulator BiSbTe2S

    圓谷貴夫, 山内邦彦, 松下ステファン悠, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　77　(2)　2022

    ISSN： 2189-079X

  4. 東北大学のアントレプレナー教育の現状と将来像

    池ノ上芳章, 森谷祐一, 松下ステファン悠

    青葉工業会報　65　(5)　2021/12

  5. Electronic transport properties of the Topological insulator surfaces revealed by the magnetic field dependence of thermoelectric properties.

    松下ステファン悠, 永田一将, HUYNH Kim-Khuong, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　76　(2)　2021

    ISSN： 2189-079X

  6. Observation of Magnetoresistance in transferred Bi1.5Sb0.5Te1.7Se1.3/Cr2Ge2Te6

    永田一将, 松下ステファン悠, PAN Xing-Chen, HUYNH Kim Khuong, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　76　(1)　2021

    ISSN： 2189-079X

  7. Conductivity scaling of BaMn2Bi2 for magnetic field and temperature

    小笠原拓磨, HUYNH Khuong Kim, 松下ステファン悠, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　76　(1)　2021

    ISSN： 2189-079X

  8. The scattering mechanism of surface Dirac states of Sn-Bi1.1Sb0.9Te2S revealed by thermoelectric transports.

    松下ステファン悠, 市村翔, 永田一将, KIM Khuong Huynh, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　75　(1)　1266-1266　2020

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.75.1.0_1266 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  9. Thermoelectric properties of gapped-surface Dirac states on 3D-topological insulators.

    松下ステファン悠

    岩谷直治記念財団研究報告書　43　2020

    ISSN： 0287-3532

  10. Observation of large anomalous Hall effect in Bi1.5Sb0.5Te1.7Se1.3/Cr2Ge2Te6 heterostructure prepared by wet-film transfer technique

    永田一将, 松下ステファン悠, PAN Xing-Chen, KIM Khuong Huynh, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　75　(2)　2020

    ISSN： 2189-079X

  11. 遍歴反強磁性物資BaMn₂Pn₂(Pn:As,Sb,Bi)の巨大磁気抵抗

    谷垣 勝己, Khuong K. Huynh, 松下ステファン 悠

    東北大学極低温科学センターだより　(20)　11-15　2019/11

    Publisher: 東北大学極低温科学センター

  12. Magnetotransport properties in KxBa1-xMn2Bi2

    Ogasawara Takuma, Kim-Huynh Khuong, Matsushita Stephane-Yu, Tahara Taimu, Kida Takanori, Hagiwara Masayuki, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　74.2　1857-1857　2019

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.74.2.0_1857 　

    eISSN： 2189-0803

  13. Thermoelectric properties of organic semiconductors

    QIU Lingwei, MATSUSHITA Stephane Yu, TANIGAKI Katsumi

    日本物理学会講演概要集(CD-ROM)　74　(1)　2019

    ISSN： 2189-079X

  14. Negative and postive magnetoresistance in BaMn2Pn2 antiferromagnets

    HUYNH K. Khuong, OGASAWARA Takuma, KITAHARA Keita, MATSUSHITA Stephane Yu, TAHARA Taimu, KIDA Takanori, HAGIWARA Masayuki, TANIGAKI Katsumi

    日本物理学会講演概要集(CD-ROM)　74　(2)　2019

    ISSN： 2189-079X

  15. Electronic transport properties of three-dimensional topological insulator Sn-BiSdTe2S II

    Ichimura Kakeru, Matsushita Stephane Yu, Nagata Kazumasa, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　74　(1)　1453-1453　2019

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.74.1.0_1453 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  16. The thickness dependence of thermoelectric properties in Bi1.5Sb0.5Te1.7Se1.3 thin film

    Nagata Kazumsa, Matsushita Stephane Yu, Huynh Kim Khuong, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　74　(2)　1012-1012　2019

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.74.2.0_1012 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  17. Quantum Hall effect and Seebeck coefficient of the topological surface Dirac state in Sn-Bi1.1Sb0.9Te2S

    Matsushita Stephane Yu, Ichimura Kekeru, Nagata Kazumasa, Huynh Kim-Kuong, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　74　(2)　1013-1013　2019

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.74.2.0_1013 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  18. Plasmon energy and dispersion at Ag clusters studied by HREELS

    Yamazaki H., Mita M., Matsushita S. Y., Haga K., Eguchi T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　74　(2)　2083-2083　2019

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.74.2.0_2083 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  19. STS/STS study of local electronic states of H-terminated Si(110) surface

    Haga Kenya, Eguchi Toyoaki, Matsushita Stephane Yu, Fukui Kunitora, Ito Takashi, Hu Chunping, Watanabe Kazuyuki, Suto Shozo

    Meeting Abstracts of the Physical Society of Japan　74　(2)　2049-2049　2019

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.74.2.0_2049 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  20. Ultrathin film of 3D topological insulators by vapor-phase epitaxy: Surface dominant transport in wide temperature revealed by Seebeck measurement

    Stephane Yu Matsushita, Khuong Kim Huynh, Katsumi Tanigaki

    2018/12/21

    DOI： 10.1103/PhysRevB.99.195302 　

    More details Close

    Realization of intrinsic surface dominant transport in a wide temperature<br /> region for a topological insulators (TIs) is an important frontier research in<br /> order to promote the progresses of TIs towards the future electronics. We<br /> report here systematic measurements of longitudinal electrical transport,<br /> Shubnikov-de-Haas (SdH) quantum oscillations, Hall coefficient (R_H^2D), and<br /> Seebeck coefficient as a function of film thickness (d) and temperature using<br /> high quality Bi2-xSbxTe3-ySey (BSTS) single crystal thin films grown by<br /> physical vapor-phase deposition. The thickness dependence of sheet conductance<br /> and Seebeck coefficient clearly show the suppression of semiconducting hole<br /> carriers of bulk states by reducing film thickness, reaching to the surface<br /> dominant transport at below dc=14 nm. Quantitative arguments are made as to how<br /> the contribution of itinerant carrier number (n) can be suppressed, using both<br /> R_H^2D (n_Hall^2D) and SdH (n_SdH). Intriguingly, the value of n_Hall^2D<br /> approaches to be twice of n_SdH below dc. While R_H^2D shows a negative sign in<br /> whole temperature region, a change from negative to positive polarity is<br /> clearly observed for S at high temperatures when d is thick. We point out that<br /> this inconsistency observed between R_H^2D and S is intrinsic in 3D-TIs and its<br /> origin is the large difference in carrier mobility between the bulk and the<br /> topological surface. We propose that Seebeck coefficient can become a<br /> convenient and powerful tool to evaluate the intrinsic carrier concentration<br /> for the topological surface in 3D-TIs even in the absence of magnetic field.

  21. Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances

    Kim-Khuong Huynh, Takuma Ogasawara, Keita Kitahara, Yoichi Tanabe, Stephane Yu Matsushita, Time Tahara, Takanori Kida, Masayuki Hagiwara, Denis Arčon, Katsumi Tanigaki

    2018/11/15

    DOI： 10.1103/PhysRevB.99.195111 　

    More details Close

    We report the discovery of a novel giant magnetoresistance (GMR) phenomenon<br /> in a family of BaMn$_{2}$Pn$_{2}$ antiferromagnets (Pn stands for P, As, Sb,<br /> and Bi) with a parity-time symmetry. The resistivities of these materials are<br /> reduced by $60$ times in magnetic fields ($\vec{H}$&#039;s), thus yielding the GMR<br /> of about $-98\%$. The GMR changes systematically along with the Pn elements,<br /> hinting that its origin is the spin orbit coupling (SOC) and/or $d$-$p$ orbital<br /> hybridization. A positive MR component emerging on top of the negative GMR at<br /> low temperatures suggests an orbital-sensitive magnetotransport as $\vec{H}$<br /> suppresses the conduction of the electron-like carriers in the $d$-like band<br /> but enhances those of hole-like ones in the $d$-$p$ hybridized band. The<br /> anisotropy of the GMR reveals that the electrical conductivity is extremely<br /> sensitive to the minute changes in the direction of the antiferromagnetic<br /> moments induced by the parity-time breaking $\vec{H}$, which seems to be<br /> associated with a magnetoelectric effect in the dynamic regime of conduction<br /> electrons. We attribute the observed GMR to the non-trivial low energy band of<br /> BMPn&#039;s, which is governed by the parity-time symmetry and an magnetic<br /> hexadecapole ordering.

  22. BaMn2Bi2におけるホール抵抗の面内磁場依存性

    小笠原拓磨, HUYNH Khuong Kim, 松下ステファン悠, 谷垣勝己, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　73　(2)　2018

    ISSN： 2189-079X

  23. Giant magnetoresistance in magnetic multipolar BaMn2Pn2 (Pn = As, Sb, Bi)

    HUYNH K. Khuong, OGASAWARA Takuma, KITAHARA Keita, MATSUSHITA Stephane Yu, TAHARA Taimu, KIDA Takanori, HAGIWARA Masayuki, TANIGAKI Katsumi

    日本物理学会講演概要集(CD-ROM)　73　(2)　2018

    ISSN： 2189-079X

  24. BaMn2Bi2の磁化特性および熱特性

    小笠原拓磨, HUYNH Khuong Kim, 松下ステファン悠, 谷垣勝己, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　73　(1)　2018

    ISSN： 2189-079X

  25. The electronic transport properties of Bi2-xSbxTe3-ySey: Estimation of surface dominance from the quantum oscillation and Hall measurements

    Matsushita Stephane Yu, Ichimura Sho, Huynh Khuong Kim, Tanabe Youichi, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　73　(1)　1185-1185　2018

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.73.1.0_1185 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  26. Thermoelectric properties of Bi2-xSbxTe3-ySey 3D-topological insulator: The Fermi level dependency revealed by field effect transistor.

    Matsushita Stephane Yu, Huynh Khuong Kim, Tanabe Youichi, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　73　(2)　752-752　2018

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.73.2.0_752 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  27. The electronic transport properties of three dimensional topological insulator Sn0.02Bi1.08Sb0.9Te2S:Measurements of resistivity, hall coefficient, magnetoresistance, and seebeck coefficient.

    Ichimura Kakeru, Matsushita Stephane Yu, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　73　(2)　754-754　2018

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.73.2.0_754 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  28. Study of the nonlinear etching process of Si(110) surfaces revealed by the Kuramoto-Sivashinsky equation V

    Kawamoto E., Kawakatsu T., Matsushita S. Y., Yamada T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　73　(2)　1924-1924　2018

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.73.2.0_1924 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  29. Anisotropic surface phonon dispersion of the deuterium-terminated Si(110)-(1×1) surface studied by high-resolution electron-energy-loss spectroscopy and first-principles calculations: For the prediction of phonon bands

    Kawamoto E., Matsushita S. Y., Okada Y., Hu C., Watanabe K., Yamada T., Suto Shozo

    Meeting Abstracts of the Physical Society of Japan　73　(0)　2348-2348　2018

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.73.1.0_2348 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  30. 3次元トポロジカル絶縁体Bi2-xSbxTe3-ySey薄膜の熱電特性の直接観測

    松下ステファン悠, HUYNH Khuong Kim, 吉野治一, TU Ngoc Han, 田邉洋一, 谷垣勝己, 谷垣勝己

    日本物理学会講演概要集(CD-ROM)　72　(1)　2017

    ISSN： 2189-079X

  31. Large Magnetoresistance observed in BaMn2Pn2(Pn=As,Sb,Bi): Synthesis and Properties

    Huynh K. Khuong, Ogasawara Takuma, Kitahara Keita, Heguri Satoshi, Matsushita Stephen Yu, Tanabe Yoichi, Aoyama Takuma, Ogushi Kenya, Kida Takanori, Hagiwara Masayuki

    Meeting Abstracts of the Physical Society of Japan　72.2　1864-1864　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.2.0_1864 　

    eISSN： 2189-0803

  32. 水素終端Si(110)表面のエッチング過程IV:KS方程式による考察

    川本絵里奈, 松下ステファン悠, 山田太郎, 川勝年洋, 須藤彰三

    日本物理学会講演概要集(CD-ROM)　72　(1)　2017

    ISSN： 2189-079X

  33. Si(110)-(1×1)表面の異方的な電子バンド構造とホール有効質量:実験,理論,そして応用

    松下ステファン悠, 高山あかり, 川本絵里奈, HU C., 渡辺一之, 高橋隆, 高橋隆, 須藤彰三

    表面科学学術講演会講演要旨集　37th　2017

  34. Early stage growth modes of Ag clusters on the hydrogen-terminated Si(111)-(1x1) surfaces and the quantum size effect.

    Kang Jungmin, Eguchi Toyoaki, Nagata Ryutaro, Kawamoto Erina, Matsushita Stephane Yu, Haga Kenya, Kanagawa Shino, Kato Hiroki, Wawro Andrzej, Czajka Ryszard, Suto Shozo

    Abstract of annual meeting of the Surface Science of Japan　37　283　2017

    Publisher: The Japan Society of Vacuum and Surface Science

    DOI： 10.14886/sssj2008.37.0_283 　

  35. The kinetic control growth of Ag islands on the hydrogen-terminated Si(111)-(1×1) surfaces.

    Kang Jungmin, Eguch Toyoaki, Kawamoto Erina, Matsushita Stephane Yu, Haga Kenya, Kanagawa Shino, Kato Hiroki, Wawro Andrzej, Czajka Ryszard, Suto Shozo

    Meeting Abstracts of the Physical Society of Japan　72.1　(1)　2505-2505　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.1.0_2505 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  36. Direct observation of thermoelectric properties of Bi2-xSbxTe3-ySey 3D-topological insulator thin films

    Matsushita Stephane Yu, Huynh Khuong Kim, Yoshino Harukazu, Tu Han Ngoc, Tanabe Youichi, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　72.1　(2)　1418-1418　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.1.0_1418 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  37. Physical vapor deposition of high-quality three-dimensional topological insulator Bi2−xSbxTe3−ySey films and physical properties

    Tu Ngoc Han, Tanabe Yoichi, Matsushita Stephane Yu, Huynh Khuong Kim, Le Phuoc Huu, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　72.2　1053-1053　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.2.0_1053 　

    eISSN： 2189-0803

  38. BaMn2Bi2 における磁気抵抗及びホール係数 Peer-reviewed

    Ogasawara T., Hagiwara Masayuki, Tanigaki Katsumi, Huynh K. Khuong, Kitahara Keita, Heguri Satoshi, Matsushita Stephen Yu, Tanabe Yoichi, Ogushi Kenya, Aoyama Takuma, Kida Takanori

    Meeting Abstracts of the Physical Society of Japan　72　(0)　1866-1866　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.2.0_1866 　

    ISSN： 2189-079X

  39. Effect of the deposition rate on growth mode of Ag island on the hydrogen-terminated Si(111)-(1×1) surface

    KANG Jungmin, EGUCHI Toyoaki, KAWAMOTO Erina, MATSUSHITA Stephane Yu, HAGA Kenya, KANAGAWA Shino, WAWRO Andrzej, CZAJKA Ryszard, KATO Hiroki, SUTO Shozo

    Program/Abstracts of ISSS (CD-ROM)　8th　2017

  40. Appearance of quantum size effect on Ag island growth process I: deposition-rate dependence

    Kang J., Eguch T., Kawamoto E., Matsushita S. Y., Haga K., Kanagawa S., Wawro A., Czajka R., Kato H., Suto S.

    Meeting Abstracts of the Physical Society of Japan　72　(2)　2228-2228　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.2.0_2228 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  41. Electronic states of three dimensional topological insulator Bi2-xSbxTe3-ySey ultrathin film studied by magneto-transport

    Tanabe Yoichi, Tu Ngoc Han, Satake Yohsuke, Huynh Khuong Kim, Matsushita Stephene Yu, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　72　(2)　1050-1050　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.2.0_1050 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  42. Anisotropic electronic band structure of the intrinsic Si(110)-(1×1) surface: Experiment and theory Peer-reviewed

    Matsushita S. Y., Takayama A., Kawamoto E., Hu S., Watanbe K., Takahashi T., Suto Shozo

    Meeting Abstracts of the Physical Society of Japan　72　(0)　2236-2236　2017

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.72.2.0_2236 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  43. 水素終端Si(111)-(1×1)表面上のAgナノクラスターの成長過程

    姜正敏, 川本絵里奈, 松下ステファン悠, 金川詩野, 加藤大樹, 須藤彰三

    日本表面科学会東北・北海道支部講演会講演予稿集　2015　2016

  44. 19pPSA-10 Deposition rate difference in orientation of Ag nanoclusters grown on the hydrogenterminated Si(111)-(1×1) surfaces

    Kang J., Kawamoto E., Matsushita S. Y., Kanagawa S., Kato H., Suto S.

    Meeting Abstracts of the Physical Society of Japan　71　(1)　2515-2515　2016

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.71.1.0_2515 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  45. 22aBA-8 The electronic properties of Bi_<2-x>Sb_xTe_<3-y>Se_y topological insulator thin film grown by PVD method : The thickness dependence of transport phenomena

    Matsushita Stephane Yu, Ngoc Han Tu, Tanabe Yoichi, Khuong Kim Huynh, Satake Yosuke, Watanabe Tomoki, Le Huu Phuoc, Yoshino Hirokazu, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　71　1417-1417　2016

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.71.1.0_1417 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  46. The electronic properties of Bi2-xSbxTe3-ySey topological insulator thin film grown by PVD method: The thickness dependence of transport phenomena II.

    Matsushita Stephane Yu, Han Tu Ngoc, Tanabe Yoichi, Huynh Khuong Kim, Watanabe Tomoki, Phuoc Le Huu, Yoshino Harukazu, Tanigaki Katsumi

    Meeting Abstracts of the Physical Society of Japan　71　(1)　1177-1177　2016

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.71.2.0_1177 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  47. Orientation of Ag nanoclusters grown on the hydrogen-terminated Si(111)-(1x1) surfaces III : Deposition Rate Difference

    Kang Jungmin, Kawamoto Erina, Matsushita Stephane Yu, Haga Kenya, Kanagawa Shino, Kato Hiroki, Suto Shozo

    Meeting Abstracts of the Physical Society of Japan　71　(2)　2460-2460　2016

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.71.2.0_2460 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  48. Etching mechanism of the hydrogen - terminated Si(110) surface

    Kawamto Erina, Matsushita Stephane Yu, Yamada Taro, Kawakatsu Toshihiro, Suto Shozo

    Meeting Abstracts of the Physical Society of Japan　71　(2)　2328-2328　2016

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.71.2.0_2328 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  49. STM images of hydrogen terminated Si(110)-(1×1) surfaces and the bias dependence

    Haga K., Matsushita S.Y., Kawamoto E., Matsuda T., Ogata T., Azuma H., Itoh T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　71　(2)　2409-2409　2016

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.71.2.0_2409 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  50. 21aAJ-6 Surface phonon dispersion on the deuterium terminated Si(110)-(1×1) surface

    Okada Y., Kawamoto E., Hu C., Matsushita S. Y., Yamada T., Watanabe K., Suto S.

    Meeting Abstracts of the Physical Society of Japan　71　(0)　2597-2597　2016

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.71.1.0_2597 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  51. 21aAB-3 Morphology and atomic structure of hydrogen-terminated Si(110)-(1×1) surfaces

    Matsushita S. Y., Kawamoto E., Haga K., Yamada T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　70　(1)　2494-2494　2015/03/21

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.1.0_2494 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  52. 21aAB-4 Wet chemical etching process of the hydrogen terminated Si(110)-(1×1) surfaces

    Kawamoto E., Matsushita S. Y., Matsuda T., Kojima S., Yamada T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　70　(1)　2495-2495　2015/03/21

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.1.0_2495 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  53. 水素終端Si(110)-(1×1)表面のフォノンII:実験と理論

    松下ステファン悠, HU Chunping, 川本絵里奈, 加藤大樹, 渡辺一之, 須藤彰三

    日本物理学会講演概要集(CD-ROM)　70　(2)　2015

    ISSN： 2189-079X

  54. 18aPS-4 STM images of hydrogen terminated Si(110)-(1×1) surfaces and the bias dependence

    Matsushita S. Y., Matsuda T., Nagata R., Kawamoto E., Itoh T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　70　(2)　2292-2292　2015

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.2.0_2292 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  55. 19pCB-3 Mechanism of cyclic etching process of hydrogen terminated Si(110)-(1×1) surface

    Kawamoto E., Matsushita S. Y., Yamada T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　70　(2)　2384-2384　2015

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.2.0_2384 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  56. Cyclic etching process of hydrogenterminated Si(110) surfaces

    Kawamoto Erina, Matsushita Stephane Yu, Yamada Taro, Suto Shozo

    Abstract of annual meeting of the Surface Science of Japan　35　387-387　2015

    Publisher: The Surface Science Society of Japan

    DOI： 10.14886/sssj2008.35.0_387 　

  57. 24aAS-8 Anisotropic electronic band structure and the effective mass of hydrogen-terminated Si(110)-(1×1) surface

    Matsushita S. Y., Takayama A., Kawamoto E., Hu C., Watanabe K., Takahashi T., Suto S.

    Meeting Abstracts of the Physical Society of Japan　70　(1)　2655-2655　2015

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.1.0_2655 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  58. 22aAE-4 Geometry of Ag nanoclusters grown on the hydrogen-terminated Si(111)-(1×1) surfaces

    Kanagawa S., Kang J., Matsushita S. Y., Kawamoto E., Kato H., Suto S.

    Meeting Abstracts of the Physical Society of Japan　70　(1)　2596-2596　2015

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.70.1.0_2596 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  59. 19aCB-12 Measurement of bias-dependent STM images of hydrogen-terminated Si(110)-(1×1) surfaces : Comparison with the electronic band structure and electronic density

    Matsushita Stephane Yu, Matsuda Takuya, Hu Chunping, Nagata Ryutaro, Kawamoto Erina, Watanabe Kazuyuki, Suto Shozo

    Meeting Abstracts of the Physical Society of Japan　70　(0)　2375-2375　2015

    Publisher: The Physical Society of Japan

    DOI： 10.11316/jpsgaiyo.70.2.0_2375 　

    ISSN： 2189-079X

    eISSN： 2189-0803

  60. 9pPSA-111 Hydrogen terminated Si(110)-(1×1) surface studied by STM

    Kawaguchi R., Matsushita S. Y., Kawamoto E., Haga K., Yamada T., Suto S.

    Meeting abstracts of the Physical Society of Japan　69　(2)　663-663　2014/08/22

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.69.2.4.0_663_4 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  61. 10aAS-10 Surface phonon dispersion of the hydrogen-terminated Si(110)-(1×1) surface : Experiment and Theory

    Matsushita S. Y., Hu C., Kawamoto E., Kato H., Yamada T., Watanabe K., Suto S.

    Meeting abstracts of the Physical Society of Japan　69　(2)　676-676　2014/08/22

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.69.2.4.0_676_2 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  62. 7aAS-7 One-dimensional electronic states of the hydrogen terminated Si(110)-(1×1) surface

    Matsushita S. Y., Takayama A., Kawamoto E., Hu C., Watanabe K., Yamada T., Takahashi T., Suto S.

    Meeting abstracts of the Physical Society of Japan　69　(2)　632-632　2014/08/22

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.69.2.4.0_632_4 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  63. 7pAK-6 Growth of Ag nanoclusters on the hydrogen-terminated Si(111)-(1×1) surface

    Kanagawa S., Kato H., Matsushita S. Y., Kawamoto E., Suto S.

    Meeting abstracts of the Physical Society of Japan　69　(2)　636-636　2014/08/22

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.69.2.4.0_636_1 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  64. 30pAP-2 Etching process of the hydrogen terminated Si(110)-(1×1) surface

    Kawamoto E., Matsushita S. Y., Kato H., Yamada T., Haga K., Suto S.

    Meeting abstracts of the Physical Society of Japan　69　(1)　907-907　2014/03/05

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.69.1.4.0_907_4 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  65. 28aAP-6 Thickness dependence of surface plasmon of Ag nanocluster on H:Si(111)-(1×1) surface

    Matsushita S. Y., Kato H., Kawamoto E., Wawro Andrzej, Czajka Ryszard, Yamada T., Suto S.

    Meeting abstracts of the Physical Society of Japan　69　(1)　875-875　2014/03/05

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.69.1.4.0_875_4 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  66. 水素終端Si(110)-(1×1)表面の周期的なエッチング過程

    川本絵里奈, 松下ステファン悠, 加藤大樹, 山田太郎, 芳賀健也, 須藤彰三

    日本表面科学会東北・北海道支部講演会講演予稿集　2013　2014

  67. 水素終端Si(110)-(1×1)表面のフォノン:実験と理論

    松下ステファン悠, HU C., 川本絵里奈, 加藤大樹, 山田太郎, 渡辺一之, 須藤彰三

    日本物理学会講演概要集　69　(2)　2014

    ISSN： 1342-8349

  68. Morphology and atomic structure of the hydrogen-terminated Si(110)-(1×1) surface studied by LEED and STM

    MATSUSHITA Stephane Yu, KAWAMOTO Erina, HAGA Kenya, YAMADA Taro, SUTO Shozo

    Program/Abstracts of ISSS (CD-ROM)　7th　2014

  69. Initial oxidation process of hydrogen terminated Si(110)-(1×1) surface

    Kawamoto E., Niimura H., Matsushita S.Y., Yamada T., Suto S.

    Meeting abstracts of the Physical Society of Japan　68　(2)　832-832　2013/08/26

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.68.2.4.0_832_3 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  70. Electronic excitations of Ag nanocluster on H : Si(111)-(1×1) surface

    Matsushita S.Y., Kato H., Kawamoto E., Yamada T., Suto S.

    Meeting abstracts of the Physical Society of Japan　68　(2)　835-835　2013/08/26

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.68.2.4.0_835_1 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  71. 29pXK-7 Energy dispersion of surface plasmon of Ag nanocluster on H: Si(111)-(1×1) surface

    Matsushita S. Y., Kato H., Kawamoto E., Yamada T., Suto S.

    Meeting abstracts of the Physical Society of Japan　68　(1)　1010-1010　2013/03/26

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.68.1.4.0_1010_1 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  72. 水素終端Si(111)-(1×1)表面の初期酸化過程

    川本絵里奈, 新村紘和, 加藤大樹, 松下ステファン悠, 山田太郎, 須藤彰三

    日本表面科学会東北・北海道支部講演会講演予稿集　2012　2013

  73. 18pFN-3 Initial oxidation process of H-terminated Si(111)-(1×1) surface

    Niimura H., Takikawa C., Kato D., Matsushita S. Y., Yamada T., Murugan P., Kawazoe Y., Kasuya A., Suto S.

    Meeting abstracts of the Physical Society of Japan　67　(2)　818-818　2012/08/24

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.67.2.4.0_818_1 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  74. 26pBB-7 Surface Phonon of Hydrogen-Terminated Si(110)-(1×1) surfaces

    Matsushita S. Y., Matsui K., Kato H., Taoka T., Yamada T., Kasuya A., Suto S.

    Meeting abstracts of the Physical Society of Japan　67　(1)　953-953　2012/03/05

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.67.1.4.0_953_2 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  75. 26pPSB-28 STM study of hydrogen terminated Si(110)-(1×1) surfaces

    Haga K., Matsushita S.Y., Kang J.M., Umetsu S., Niimura H., Suzuki T., Yamada T., Suto S.

    Meeting abstracts of the Physical Society of Japan　67　(1)　962-962　2012/03/05

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.67.1.4.0_962_4 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  76. Surface phonon dispersion with a glide plane on H:Si(110)-(1x1) surface

    Matsushita Stephane Yu, Matsui Kazuki, Kato Hiroki, Yamada Taro, Suto Shozo

    Abstract of annual meeting of the Surface Science of Japan　32　70-70　2012

    Publisher: The Surface Science Society of Japan

    DOI： 10.14886/sssj2008.32.0_70 　

  77. Initial oxidation process of H-terminated Si(111) and Si(110) surfaces

    Niimura Hirokazu, Kato Daiki, Matsushita Stephane Yu, Kawamoto Erina, Yamada Taro, Suto Shozo

    Abstract of annual meeting of the Surface Science of Japan　32　105-105　2012

    Publisher: The Surface Science Society of Japan

    DOI： 10.14886/sssj2008.32.0_105 　

  78. 22pHA-9 Preparation of Hydrogen Terminated Si(110)-(1×1) surface and Surface Phonon II

    Matsushita S. Y., Matsui K., Kato H., Nakaya H., Takada H., Taoka T., Yamada T., Kasuya A., Suto S.

    Meeting abstracts of the Physical Society of Japan　66　(2)　922-922　2011/08/24

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.66.2.4.0_922_3 　

    ISSN： 1342-8349

    eISSN： 2189-0803

  79. 24pWS-3 Preparation of Hydrogen-Terminated Si(110)-(1×1) Surface and Surface Phonon

    Matsui K., Kato H., Nakaya H., Matsushita S., Takada H., Taoka T., Yamada T., Kasuya A., Suto S.

    Meeting abstracts of the Physical Society of Japan　65　(2)　868-868　2010/08/18

    Publisher: The Physical Society of Japan (JPS)

    DOI： 10.11316/jpsgaiyo.65.2.4.0_868_1 　

    ISSN： 1342-8349

    eISSN： 2189-0803

Show all ︎Show first 5

Books and Other Publications 1

  1. EntreComp Framework in Japanese

    2024/03

Presentations 35

  1. Evaluation of the Entrepreneurship Education using EntreComp framework

    Stephane Y MATSUSHITA, Hirokazu MORIYA, Takeshi KATO, Hiroshi Nanjo, Yoshiaki IKENOUE

    2024/09/06

  2. Electronic transport properties of the Topological insulator surfaces revealed by the magnetic field dependence of thermoelectric properties.

    Stephane Yu Matsushita, Kazumasa Nagata, Kim-Khuong Huynh, Katsumi Tanigaki

    2021/09/22

  3. The large magnetoresistance in BaMn2Bi2 antiferromagnets and its possible origins

    2020/09/10

  4. 転写法によるBi1.5Sb0.5Te1.7Se1.3/Cr2Ge2Te6ヘテロ構造の作製と異常ホール効果の観測

    永田一将, 松下ステファン悠, ing-Chen Pan, Kim Khuong Huynh, 谷垣勝己

    日本物理学会2020年秋季大会　2020/09/09

  5. The scattering mechanism of surface Dirac states of Sn-Bi1.1Sb0.9Te2S revealed by thermoelectric transports.

    Stephane Yu Matsushita, Kakeru Ichimura, Kazumasa Nagata, Kim-Khuong Huynh, Katsumi Tanigaki

    2020/03/19

  6. Sn-Bi1.1Sb0.9Te2Sにおける表面ディラック電子による量子ホール効果とゼーベック係数

    松下ステファン悠, 市村翔, 永田一将, K.K. Huynh, 谷垣勝己

    日本物理学会 2019年秋季大会　2019/09/10

  7. Bi1.5Sb0.5Te1.7Se1.3薄膜における熱電特性の膜厚依存性

    永田一将, 松下ステファン悠, K.K. Huynh, 谷垣勝己

    日本物理学会 2019年秋季大会　2019/09/10

  8. Quantum hall effect and thermoelectric properties of surface Dirac states in Sn-Bi1.1Sb0.9Te2S crystal International-presentation Invited

    MATSUSHITA, Stephane Yu

    Study of matter at Extreme Condition (SMEC2019)　2019/03/31

  9. Thermoelectric properties of organic semiconductors

    Qiu Lingwei, 松下ステファン悠, 谷垣勝己

    日本物理学会 第74回年次会　2019/03/14

  10. 3次元トポロジカル絶縁体Sn-BiSbTe2Sの電子輸送特性Ⅱ

    市村翔, 松下ステファン悠, 永田一将, 谷垣勝己

    日本物理学会第74回年次大会　2019/03

  11. 3次元トポロジカル絶縁体Sn0.02Bi1.08Sd0.9Te2Sの電気輸送特性：電気抵抗、ホール抵抗、磁気抵抗及びゼーベック係数の複合測定

    市村翔, 松下ステファン悠, 谷垣勝己

    日本物理学会2018年秋季大会　2018/09

  12. Bi2-xSbxTe3-ySey薄膜の熱電特性：電界効果を用いたフェルミ準位の制御とその影響

    松下ステファン悠, Kim-Khuong Huynh, 田邉洋一, 谷垣勝己

    日本物理学会2018年秋季大会　2018/09

  13. Thermoelectric properties of the surface Dirac states of 3D topological insulators International-presentation Invited

    MATSUSHITA, Stephane Yu

    6th World Congress and Expo on Nanotechnology and Materials Science　2018/04/16

  14. Bi2-xSbxTe3-ySey薄膜の電子輸送特性：量子振動とHall測定の比較から見た表面戦士占有率の評価

    松下ステファン悠, 市村翔, Kim-Khuong Huynh, 田邉洋一, 谷垣勝己

    日本物理学会第73回年次大会　2018/03

  15. Thermoelectric properties of ultrathin films of 3D Topological insulator International-presentation

    2017 EMN Meeting on 2D materials　2017/08/08

  16. 3次元トポロジカル絶縁体Bi2-xSbxTe3-ySey薄膜の熱電特性の直接観測

    Stephane Yu Matsushita, Tu Ngoc Han, 田邉洋一, Khuong Kim Huynh, 吉野浩一, 谷垣勝己

    日本物理学会 第72回年次会　2017/03/17

  17. Thermoelectric properties of ultrathin films of Bi2-xSbxTe3-ySey

    Stephane Yu Matsushita, Khuong Kim Huynh, Harukazu Yoshino, Ngoc Han Tu, Yoichi Tanabe, Katsumi Tanigaki

    American Physical Society March Meeting 2017　2017/03/13

  18. 気相成長させたトポロジカル絶縁体Bi2-xSbxTe3-ySey薄膜の電子状態：輸送現象の膜厚依存性 II

    松下ステファン悠, Ngoc Han Tu, 田邉洋一, Khuong Kim Huynh, 渡部智貴, Le Huu Phuoc, 吉野治一, 谷垣勝己

    日本物理学会２０１６年秋季大会　2016/09

  19. 気相成長させたトポロジカル絶縁体Bi2-xSbxTe3-ySey薄膜の電子状態：輸送現象の膜厚依存性

    Stephane Yu Matsushita, Tu Ngoc Han, 田邉洋一, Khuong Kim Huynh, 佐竹遥介, 渡部智貴, Le Huu Phuoc, 吉野治一, 谷垣勝己

    日本物理学会第71回年次大会　2016/03

  20. 水素終端Si(110)-(1×1)表面のフォノンII：実験と理論

    松下ステファン悠, 胡春平, 川本絵里奈, 加藤大樹, 渡辺一之, 須藤彰三

    日本物理学会秋季大会　2015/09/16

  21. 水素終端Si(110)-(1x1)表面のSTM像の電圧依存性と電子状態との相関

    Stephane Yu Matsushita, 松田卓也, 胡春平, 永田龍太郎, 川本絵里奈, 渡辺一之, 須藤彰三

    日本物理学会秋季大会　2015/09/16

  22. 水素終端Si(110)-(1×1) 表面の電子バンドの異方性と有効質量

    松下ステファン悠, 高山あかり, 川本絵里奈, 胡春平, 渡辺一之, 高橋隆, 須藤彰三

    日本物理学会 第７０回年次大会　2015/03/21

  23. Surface phonon dispersion of the hydrogen-terminated Si(110)-(1×1) surface: Experiment and theory International-presentation

    Stephane Yu Matsushita, C. Hu, E. Kawamoto, H. Kato, K. Watanabe, S. Suto

    The 7th International Symposium on Surface Science　2014/11

  24. 水素終端Si(110)-(1×1)表面の1次元電子状態

    松下ステファン悠, 高山あかり, 川本絵理奈, 胡春平, 渡辺一之, 山田太郎, 高橋隆, 須藤彰三

    日本物理学会2014年秋季大会　2014/09

  25. 水素終端Si(110)-(1×1)表面のフォノン：実験と理論

    松下ステファン悠, 胡春平, 川本絵理奈, 加藤大樹, 山田太郎, 渡辺一之, 須藤彰三

    日本物理学会2014年秋季大会　2014/09

  26. 水素終端Si(111)-(1×1)表面上におけるAgナノクラスターの表面プラズモンの膜厚依存性

    松下ステファン悠, 加藤大樹, 川本絵理奈, A. Wawro, R. Czajka, 山田太郎, 須藤彰三

    日本物理学会第69回年次会　2014/03

  27. Surface phonon dispersion and the role of glide symmetry on the hydrogen-terminated Si(110)-(1×1) surface International-presentation

    S.Y. Matsushita, K. Matsui, H. Kato, T. Yamada, S. Suto

    19th International Vacuum Congress / International Conference on Nanoscience and Technology 2013 and partner conferences　2013/09

  28. 水素終端Si(111)-(1×1)面上におけるAgナノクラスターの電子励起状態

    松下ステファン悠, 加藤大樹, 川本絵理奈, 山田太郎, 須藤彰三

    日本物理学会2013年秋季大会　2013/09

  29. 水素終端Si(111)-(1×1)面上におけるAgナノクラスターの表面プラズモンのエネルギー分散

    松下ステファン悠, 加藤大樹, 川本絵里奈, 山田太郎, 須藤彰三

    日本物理学会第68回年次大会　2013/03

  30. 映進面を反映したH:Si(110)-(1×1)表面の表面フォノン分散

    松下ステファン悠, 松井一記, 加藤大樹, 山田太郎, 須藤彰三

    第32回表面科学学術講演会　2012/11

  31. Dispersion of Surface Phonons on the Hydrogen-terminated Si(110)-(1×1) Surface International-presentation

    S.Y. Matsushita, K. Matsui, H. Kato, T. Yamada, S. Suto

    The 10th Japan-Russia Seminar Semiconductor Surfaces　2012/09

  32. 映進面をもつH:Si(110)-(1×1)表面における表面フォノン

    松下ステファン悠, 松井一記, 加藤大樹, 田岡琢己, 山田太郎, 粕谷厚生, 須藤彰三

    日本表面科学会東北・北海道支部講演会　2012/03

  33. 高品位水素終端Si(110)-(1×1)表面の表面フォノン

    松下ステファン悠, 松井一記, 加藤大樹, 田岡琢己, 山田太郎, 粕谷厚生, 須藤彰三

    日本物理学会第67回年次大会　2012/03

  34. 高品位水素終端Si(110)-(1×1)表面の開発と表面フォノンⅡ

    松下ステファン悠, 松井一記, 加藤大樹, 中矢博樹, 高田弘樹, 田岡琢己, 山田太郎

    日本物理学会2011年秋季大会　2011/09

  35. 水素終端Si(110)-(1×1)表面の作成法の開発と表面フォノンの研究

    松下ステファン悠, 松井一記, 加藤大樹, 中矢博樹, 田岡琢己, 山田太郎, 粕谷厚生, 須藤彰三

    日本表面科学会東北・北海道支部講演会　2011/03

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Research Projects 5

  1. Unusual Thermoelectric properties in Topological Insulators with various Device designs

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Tohoku University

    2021/04/01 - 2024/03/31

  2. The effects of non-trivial electronic and spin states in the thermoelectric properties of topological materials Competitive

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Institution: Tohoku University

    2018/04 - 2020/03

  3. Direc observation of thermoelectric properties of surface Dirac states on topological insulators Competitive

    Matsushita Stephane Yu

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)

    Category: Grant-in-Aid for Young Scientists (B)

    Institution: Tohoku University

    2017/04 - 2020/03

    More details Close

    Here, we studied the thermoelectric (TE) properties of the topological surface Dirac states (TSDSs) on the three-dimensional topological insulators (3D-TIs). By employing two high bulk insulating 3D-TI materials as Bi2-xSbxTe3-ySey and Sn-Bi1.08Sb0.9Te2S, we performed a direct observation of the TE transports of TSDSs and revealed several intrinsic properties of TSDSs: First, TSDSs shows a quite high Seebeck coefficient (S) and Power factor (PF), which is more than one magnitude higher than conventional metals and also higher than these value of other 2D materials. Second, the S and PF of TSDSs can be enhanced by introducing an energy gap between the TSDS by reducing the film thickness. Third, we revealed that the large S and PF of TSDSs are originated to the energy dependence of relaxation time of Dirac electrics.

  4. トポロジカル絶縁体薄膜におけるエネルギーギャップと熱電物性の相関の解明と新たな熱電変換材料の創生 Competitive

    松下 ステファン悠

    Offer Organization: 岩谷直治記念財団

    System: 岩谷科学技術研究助成

    2018/04 - 2019/03

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    本研究課題では、現在までに提案されている幾つかの3D-TIにおける熱電変換理論のなかでも、表面ディラックバンドにエネルギーギャップが発現した際（ギャップ型3D-TI）におけるZT値の増大の可能性とそのメカニズムの解明を実験的立場から行なうことを目的とする。具体的には、高いバルク絶縁性を示す3D-TIであるBi2-xSbxTe3-ySey結晶の高品位薄膜を作製し、その熱電物性（電気抵抗率、ゼーベック係数、熱伝導率）の測定から、メカニズムの解明とZT値向上のための指針を示すことを目指す。

  5. 3次元トポロジカル絶縁体BSTS薄膜を用いた表面ディラック電子系の熱電物性の直接観測をその解明 Competitive

    松下 ステファン悠

    Offer Organization: 矢崎科学技術振興記念財団

    System: 矢崎科学技術振興記念財団 奨励研究助成

    2017/04 - 2018/03

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    本研究では、トポロジカル絶縁体の表面状態の熱電物性（電気伝導度σ、熱伝導度κ、ゼーベック係数S）を直接観測し、その性質を明らかにすることを目的としている。そのためには、固体内部（バルク）の影響を可能な限り小さくする必要がある。そこで、バルク絶縁性の高いトポロジカル絶縁体であるBi1.5Sb0.5Te1.7Se1.3（BSTS）を研究の対象とする。また、試料を薄膜化することでバルクの割合を小さくし、表面の情報をより顕在化させる。これらによって表面状態の直接観測が可能になると期待される。

Teaching Experience 1

  1. 物質理工学概論　東北大学大学院

Academic Activities 1

  1. Japan-Europe Entrepreneurship Synergy Days（JP-EU ESD）

    2021/02/17 - 2021/03/02

    Activity type: Competition, symposium, etc.