Details of the Researcher

PHOTO

Takahiro Shinada
Section
Center for Innovative Integrated Electronic Systems
Job title
Professor
Degree

  • 経営学 (Waseda University)

  • 工学 (Waseda University)

Research History 10

  • 2014/10 - Present
    Tohoku University　Center for Innovative Integrated Electronic Systems　Deputy Director, Professor

  • 2012/04 - 2014/09
    National Institute of Advanced Industrial Science and Technology

  • 2009/04 - 2012/03
    Waseda University　Institue for Advanced Study

  • 2007/04 - 2009/03
    Waseda University

  • 2006/04 - 2007/03
    Waseda University

  • 2004/07 - 2006/03
    Waseda University

  • 2004/04 - 2004/06
    Waseda University

  • 2002/04 - 2004/03
    日本学術振興会 特別研究員

  • 2000/04 - 2002/03
    Waseda University　School of Science and Engineering

  • 2001/07 - 2001/09
    ドイツ ルール大学 固体物理研究所 客員研究員

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Education 4

  • Waseda University　Graduate School of Science and Engineering　Department of Electronics, Information and Communication

    - 2000

  • Waseda University

    - 2000

  • Waseda University　School of Science and Engineering　Department of Electronics and Communications

    - 1995

  • Waseda University　School of Science and Engineering

    - 1995

Committee Memberships 15

  • Fellow, Center for Research and Development Strategy (CRDS), Japan Science and Technology (JST)

    2009 - 2010

  • 応用物理学会シリコンテクノロジー分科会接合技術研究会 幹事

    2010 -

  • Program Committee Member, 2010 International Conference on Ion Beam Modification of Materials (IBMM2010)

    2010 -

  • Member, Working Group 12 (Emerging Research Devices: ERD)

    2010 -

  • イオンビーム材料改質国際会議(IBMM2010)・プログラム委員

    2010 -

  • 電子情報技術産業協会(JEITA)ナノエレクトロニクス標準化専門委員会 委員

    2010 -

  • Member, IEC TC113, Japan Electronics and Information Technology Industries Association (JEITA)

    2010 -

  • 電子情報技術産業協会(JEITA) 半導体技術ロードマップ委員会(STRJ)

    2010 -

  • 国際固体素子材料コンファレンス(SSDM2009)・実行委員

    2009 -

  • 科学技術振興機構(JST)研究開発戦略センター 特任フェロー

    2009 -

  • Steering Committee Member, 2009 International Conference on Solid State Devices and Materials (SSDM2009)

    2009 -

  • ワーキンググループ12 (Emerging Research Devices: ERD) 幹事

  • Japan Electronics and Information Technology Industries Association (JEITA)

  • Member, Working Group 13 (Emerging Research Materials: ERM)

  • ワーキンググループ13 (Emerging Research Devices: ERM) 特別委員

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Professional Memberships 3

  • The Institute of Electrical and Electronics Engineers (IEEE) Electron Devices Society

  • 応用物理学会シリコンテクノロジー分科会

  • 応用物理学会

Research Interests 3

  • Single dopant device

  • Deterministic Doping

  • Single Atom Nanoelectronics

Research Areas 4

  • Nanotechnology/Materials / Nano/micro-systems /

  • Nanotechnology/Materials / Nanobioscience /

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

  • Nanotechnology/Materials / Nanomaterials /

Awards 3

  1. 応用物理学会講演奨励賞

    2002/09/24　応用物理学会

  2. Best Poster Award

    2000/09/22　13th International Conference on Ion Implantation Technology

  3. Student Award

    1998/06/26　International Conference on Ion Implantation Technology

Papers 40

  1. Detecting nuclear spins in an organosilane monolayer using nitrogen-vacancy centers for analysis of precursor self-assembly on diamond surface

    Yuki Ueda, Yuto Miyake, Akirabha Chanuntranont, Kazuki Otani, Masato Tsugawa, Daiki Saito, Shuntaro Usui, Tokuyuki Teraji, Shinobu Onoda, Takahiro Shinada, Hiroshi Kawarada, Takashi Tanii

    JAPANESE JOURNAL OF APPLIED PHYSICS　62　(SG)　2023/06

    DOI： 10.35848/1347-4065/accc91 　

    ISSN： 0021-4922

    eISSN： 1347-4065

  2. Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability

    K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, T. Tanigawa, S. Ikeda, T. Shinada, H. Koike, T. Endoh, T. Makino, T. Ohshima

    IEEE International Reliability Physics Symposium Proceedings　2022-March　P541-P545　2022

    DOI： 10.1109/IRPS48227.2022.9764491 　

    ISSN： 1541-7026

  3. Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms

    Simona Achilli, Nguyen H. Le, Guido Fratesi, Nicola Manini, Giovanni Onida, Marco Turchetti, Giorgio Ferrari, Takahiro Shinada, Takashi Tanii, Enrico Prati

    Advanced Functional Materials　31　(21)　2011175-2011175　2021/05

    Publisher: Wiley

    DOI： 10.1002/adfm.202011175 　

    ISSN： 1616-301X

    eISSN： 1616-3028

  4. Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature

    Takafumi Fujimoto, Keinan Gi, Stefano Bigoni, Michele Celebrano, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Enrico Prati, Takashi Tanii

    2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020　123-124　2020/06/01

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.1109/SNW50361.2020.9131655 　

  5. Single Ion implanted silicon devices towards few photons emission regime for space quantum communications

    Enrico Prati, Takahiro Shinada, Takashi Tanii

    Optics InfoBase Conference Papers　2020

    Publisher: The Optical Society

  6. Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature

    Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Keinan Gi, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii

    2019 Silicon Nanoelectronics Workshop, SNW 2019　2019/06/01

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.23919/SNW.2019.8782962 　

  7. Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

    Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, Enrico Prati

    Nanomaterials　9　(3)　416-416　2019/03/11

    Publisher: MDPI AG

    DOI： 10.3390/nano9030416 　

    eISSN： 2079-4991

    More details Close

    An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

  8. GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

    Simona Achilli, Nicola Manini, Giovanni Onida, Takahiro Shinada, Takashi Tanii, Enrico Prati

    Scientific Reports　8　(1)　2018/12/01

    Publisher: Nature Publishing Group

    DOI： 10.1038/s41598-018-36441-w 　

    ISSN： 2045-2322

  9. Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

    Ryosuke Fukuda, Priyadharshini Balasubramanian, Itaru Higashimata, Godai Koike, Takuma Okada, Risa Kagami, Tokuyuki Teraji, Shinobu Onoda, Moriyoshi Haruyama, Keisuke Yamada, Masafumi Inaba, Hayate Yamano, Felix M. Stürner, Simon Schmitt, Liam P. McGuinness, Fedor Jelezko, Takeshi Ohshima, Takahiro Shinada, Hiroshi Kawarada, Wataru Kada, Osamu Hanaizumi, Takashi Tanii, Junichi Isoya

    New Journal of Physics　20　(8)　2018/08

    DOI： 10.1088/1367-2630/aad997 　

    ISSN： 1367-2630

  10. Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures Peer-reviewed

    Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, T. Tanii, T. Shinada, Y. Nagai

    NANOTECHNOLOGY　28　(38)　385301　2017/09

    DOI： 10.1088/1361-6528/aa7f49 　

    ISSN： 0957-4484

    eISSN： 1361-6528

  11. 1.54 mu m photoluminescence from Er:O-x centers at extremely low concentration in silicon at 300 K Peer-reviewed

    Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii, Enrico Prati

    OPTICS LETTERS　42　(17)　3311-3314　2017/09

    DOI： 10.1364/OL.42.003311 　

    ISSN： 0146-9592

    eISSN： 1539-4794

  12. Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration

    E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii

    Proceedings of 2017 Silicon Nanoelectronics Workshop (SNW)　105-106　2017/06

    DOI： 10.23919/SNW.2017.8242319 　

  13. Atom probe study of erbium and oxygen co-implanted silicon

    Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai

    Proceedings of 2017 Silicon Nanoelectronics Workshop (SNW)　99-100　2017/06

    DOI： 10.23919/SNW.2017.8242316 　

    ISSN： 2161-4636

  14. Deterministic single-ion implantation method for quantum processing in silicon and diamond

    Takahiro Shinada, Enrico Prati, Takashi Tanii

    Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives　3-26　2017/01/01

    Publisher: Pan Stanford Publishing Pte. Ltd.

    DOI： 10.1201/9781315181257 　

  15. Deterministic doping to silicon and diamond materials for quantum processing

    Takahiro Shinada, Enrico Prati, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Fedor Jelezko, Junnichi Isoya

    16th International Conference on Nanotechnology - IEEE NANO 2016　888-890　2016/11/21

    DOI： 10.1109/NANO.2016.7751573 　

  16. Fabrication of NV center array for quantum sensing by low-energy ion implantation with nano-hole resist mask

    HIGASHIMATA Itaru, Okada Takuma, Kagami Risa, Teraji Tokuyuki, Onoda Shinobu, Haruyama Moriyoshi, Yamada Keisuke, Inaba Masafumi, Yamano Hayate, Balasubramanian Priyadharshini, McGuinness Liam P, Naydenov Boris, Jelezko Fedor, Ohshima Takeshi, Shinada Takahiro, Kawarada Hiroshi, Kada Wataru, Hanaizumi Osamu, Isoya Junichi, Tanii Takashi

    JSAP Annual Meetings Extended Abstracts　2016.2　1239-1239　2016/09/01

    Publisher: The Japan Society of Applied Physics

    DOI： 10.11470/jsapmeeting.2016.2.0_1239 　

    eISSN： 2436-7613

  17. Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

    Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY　4　(5)　365-373　2016/09

    DOI： 10.1109/JEDS.2016.2568261 　

    ISSN： 2168-6734

  18. Band transport across a chain of dopant sites in silicon over micron distances and high temperatures

    Enrico Prati, Kuninori Kumagai, Masahiro Hori, Takahiro Shinada

    Scientific Reports　6　2016/01/21

    Publisher: Nature Publishing Group

    DOI： 10.1038/srep19704 　

    ISSN： 2045-2322

  19. Opportunity of single atom control for quantum processing in silicon and diamond

    Takahiro Shinada, Prati Enrico, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, Fedor Jelezko, Junichi Isoya

    2014 Silicon Nanoelectronics Workshop, SNW 2014　2015/12/04

    DOI： 10.1109/SNW.2014.7348533 　

  20. Investigation of the silicon vacancy color center for quantum key distribution Peer-reviewed

    Yan Liu, Petr Siyushev, Youying Rong, Botao Wu, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Heping Zeng, E. Wu

    OPTICS EXPRESS　23　(26)　32961-32967　2015/12

    DOI： 10.1364/OE.23.032961 　

    ISSN： 1094-4087

  21. Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

    Yan Liu, Gengxu Chen, Youying Rong, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, E. Wu, Heping Zeng

    Scientific Reports　5　2015/07/23

    DOI： 10.1038/srep12244 　

    eISSN： 2045-2322

  22. Fluorescence Polarization Peer-reviewed

    Y. Liu, G. Chen, Y. Rong, L. P. McGuinness, F. Jelezko, S. Tamura, T. Tanii, T. Teraji, S. Onoda, T. Ohshima, J. Isoya, T. Shinada, E. Wu, H. Zeng

    Scientific Report　5　12244　2015/07/23

  23. Single ion implantation of Ge donor impurity in silicon transistors Peer-reviewed

    E. Prati, Y. Chiba, M. Yano, K. Kumagai, M. Hori, G. Ferrari, T. Shinada, T. Tanii

    2015 SILICON NANOELECTRONICS WORKSHOP (SNW)　2015

  24. Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

    Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

    Applied Physics Express　7　(11)　115201　2014/11/01

    DOI： 10.7567/APEX.7.115201 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  25. Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

    Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

    APPLIED PHYSICS EXPRESS　7　(11)　2014/11

    DOI： 10.7567/APEX.7.115201 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  26. In situ modification of cell-culture scaffolds by photocatalytic decomposition of organosilane monolayers

    Hideaki Yamamoto, Takanori Demura, Mayu Morita, Sho Kono, Kohei Sekine, Takahiro Shinada, Shun Nakamura, Takashi Tanii

    Biofabrication　6　(3)　2014

    Publisher: Institute of Physics Publishing

    DOI： 10.1088/1758-5082/6/3/035021 　

    ISSN： 1758-5090 1758-5082

  27. Atomic scale devices: advancements and directions Invited Peer-reviewed

    Enrico Prati, Takahiro Shinada

    2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　2014

    DOI： 10.1109/IEDM.2014.7046961 　

  28. Comparison of Self-Heating Effect (SHE) in Short-Channel Bulk and Ultra-Thin BOX SOI MOSFETs: Impacts of Doped Well, Ambient Temperature, and SOI/BOX Thicknesses on SHE Peer-reviewed

    Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida

    2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　2013

  29. Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

    Masahiro Hori, Keigo Taira, Akira Komatsubara, Kuninori Kumagai, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Takahiro Shinada

    Applied Physics Letters　101　(1)　013503-013503　2012/07/02

    Publisher: AIP Publishing

    DOI： 10.1063/1.4733289 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  30. Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor Peer-reviewed

    Enrico Prati, Masahiro Hori, Filippo Guagliardo, Giorgio Ferrari, Takahiro Shinada

    NATURE NANOTECHNOLOGY　7　(7)　443-447　2012/07

    DOI： 10.1038/NNANO.2012.94 　

    ISSN： 1748-3387

  31. Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

    Masahiro Hori, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari, Takahiro Shinada

    Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011　75-76　2011

    DOI： 10.1109/IWJT.2011.5970003 　

  32. Quantum transport in deterministically implanted single-donors in Si FETs Peer-reviewed

    T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati

    2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　Session No. 30.4　2011

    DOI： 10.1109/IEDM.2011.6131644 　

  33. Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method Peer-reviewed

    T. Shinada, M. Hori, Y. Ono, K.Taira, A. Komatsubara, T.Tanii, T. Endoh, I. Ohdomari

    Proc. of SPIE　7637　763711-1-763711-7　2010/05

    DOI： 10.1117/12.848322 　

  34. Recent advance in single-ion implantation method for single-dopant devices

    Takahiro Shinada, Masahiro Hori, Keigo Taira, Tetsuo Endoh, Iwao Ohdomari

    Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009　96-99　2009

    DOI： 10.1109/IWJT.2009.5166228 　

  35. Ensemble Monte Carlo/Molecular Dynamics Simulation of Electron Mobility in Silicon with Ordered Dopant Arrays

    T. Terunuma, T. Watanabe, T. Shinada, I. Ohdomari, Y. Kamakura, K. Taniguchi

    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES　29-+　2008

    DOI： 10.1109/SISPAD.2008.4648229 　

  36. Enhancing semiconductor device performance using ordered dopant array Peer-reviewed

    T. Shinada, S. Okamoto, T. Kobayashi, I. Ohdomari

    Nature　2005/10

    DOI： 10.1038/nature04086 　

  37. Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching

    Koh Meishoku, Goto Tomomi, Sugita Atsushi, Tanii Takashi, Iida Tomoyuki, Shinada Takahiro, Matsukawa Takashi, Ohdomari Iwao

    Jpn J Appl Phys　40　(4)　2837-2839　2001/04/30

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

    DOI： 10.1143/JJAP.40.2837 　

    ISSN： 0021-4922

    More details Close

    A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

  38. High-Density Nanoetchpit-Array Fabrication on Si Surface Using Ultrathin SiO2 Mask

    Koh Meishoku, Sawara Souichi, Goto Tomomi, Ando Yoshinori, Shinada Takahiro, Ohdomari Iwao

    Jpn J Appl Phys　39　(9)　5352-5355　2000/09/15

    Publisher: The Japan Society of Applied Physics

    DOI： 10.1143/JJAP.39.5352 　

    ISSN： 0021-4922

    More details Close

    Nanoetchpit arrays (NEPAs) with a density of 1.56 T(1012)pit/in2 were artificially fabricated on Si surfaces. The key to the success of high-density-NEPA fabrication is through utilization of ultrathin SiO2 layer as an Si etching mask and N2H4 (hydrazine) solution as an Si etchant. The NEPAs were fabricated in only three steps: (1) focused electron-beam (EB) irradiation onto SiO2 mask, (2) SiO2 mask development using an HF-based solution, and (3) Si etching using hydrazine. The enhanced etching phenomenon of EB-exposed SiO2 in an HF-based solution was applied to pattern the SiO2 mask. Thin SiO2 layers with a thickness of 8 nm at the initial stage (4 nm after the development) were used as Si etching mask to suppress both spreading of the EB-exposed region by the forward scattering of the electrons and lateral extension of the SiO2 etching region during the development. Si substrates were etched through 4-nm-thick SiO2 mask by dipping in a hydrazine solution with an extremely high etching selectivity for Si/SiO2. By using this simple process, 8-nm-diameter NEPAs with a 20 nm pitch were successfully arranged on Si surfaces.

  39. Current status of single ion implantation

    Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa, Iwao Ohdomari

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures　16　(4)　2489-2493　1998

    Publisher: American Institute of Physics Inc.

    DOI： 10.1116/1.590196 　

    ISSN： 1071-1023

  40. Impact of a few Dopant Positions Controlled by Deterministic Single-Ion Doping on the Transconductance of Field-Effect Transistors

    M.Hori, T.Shinada, Y.Ono, A.Komatsubara, K.Kumagai, T.Tanii, T.Endoh, I.Ohdomari

    Appl. Phys. Lett. 99 (2011) 062103

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Misc. 34

  1. Fabrication of on-chip microwave antenna for long-term pulsed ODMR measurements using NV centers in diamond

    臼井俊太郎, 上田優樹, 大谷和毅, 津川雅人, 齋藤大樹, 三宅悠斗, 品田高宏, 谷井孝至

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　70th　2023

    ISSN： 2758-4704

  2. Alternating magnetic field detection using a single shallow NV center in a nanopillar fabricated in the diamond surface

    齋藤大樹, 大谷和毅, CHANUNTRANONT Akirabha, 上田優樹, 津川雅人, 三宅悠斗, 臼井俊太郎, 寺地徳之, 小野田忍, 品田高宏, 川原田洋, 谷井孝至

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　70th　2023

    ISSN： 2758-4704

  3. Photoluminescence measurement of Er:O-doped silicon nano pillars at room temperature

    石井智己, 高橋勇磨, 内田海成, 圖師拓海, 佐藤真一郎, PRATI Enrico, 品田高宏, 谷井孝至

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　83rd　2022

    ISSN： 2758-4704

  4. Electroluminescence and electrical conduction characteristics measurement of Er/O co-doped Si diode incorporating nanopillar structure

    古瀬遼, 藤本宇郁, 魏啓楠, 鈴木雄大, ABDELGHAFAR Ayman, 矢野真麻, 千葉悠貴, PRATI Enrico, CELEBRANO Michele, 佐藤真一郎, 品田高宏, 谷井孝至

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　68th　2021

    ISSN： 2758-4704

  5. Fabrication of single impurity defects in a regular array by ion implantation and its quantum application

    Tanii Takashi, Shinada Takahiro, Teraji Tokuyuki, Onoda Shinobu, Ohshima Takeshi, McGuinness Liam, Jelezko Fedor, Liu Yan, Wu E, Kada Wataru, Hanaizumi Osamu, Kawarada Hiroshi, Isoya Junichi

    JSAP Annual Meetings Extended Abstracts　66th　220-220　2019

    Publisher: The Japan Society of Applied Physics

    DOI： 10.11470/jsapmeeting.2019.1.0_220 　

    eISSN： 2436-7613

  6. 浅い単一NVセンターの規則配列を用いたナノNMRのスピンノイズ解析

    石井邑, 福田諒介, BALASUBRAMANIAN Priyadharshini, 東又格, 永岡希朗, 河合空, 薗田隆弘, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 稲葉優文, 山野颯, STUERNER Felix M, SCHMITT Simon, MCGUINNESS Liam P, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　79th　ROMBUNNO.20a‐PB9‐12-1350　2018/09/05

    Publisher: The Japan Society of Applied Physics

    DOI： 10.11470/jsapmeeting.2018.2.0_1350 　

    eISSN： 2436-7613

  7. イオン注入による原子空孔の形成とNVセンターへの変換効率

    小野田忍, 立見和雅, 春山盛善, 春山盛善, 寺地徳之, 磯谷順一, 山田圭介, 谷井孝至, 川原田洋, 品田高宏, 加田渉, 花泉修, 大島武

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　64th　2017

    ISSN： 2436-7613

  8. Fabrication of SiV centers by ion implantation and the dependence of creation yield on the implantation energy

    Kagami Risa, Higashimata Itaru, Okada Takuma, Teraji Tokuyuki, Onoda Shinobu, Haruyama Moriyoshi, Ohshima Takeshi, Shinada Takahiro, Kada Wataru, Hanaizumi Osamu, Isoya Junichi, Tanii Takashi

    JSAP Annual Meetings Extended Abstracts　77th　1253-1253　2016

    Publisher: The Japan Society of Applied Physics

    DOI： 10.11470/jsapmeeting.2016.2.0_1253 　

    eISSN： 2436-7613

  9. Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping

    Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    APPLIED PHYSICS EXPRESS　4　(4)　046501　2011/04

    DOI： 10.1143/APEX.4.046501 　

    ISSN： 1882-0778

  10. Modulation of Viability of Live Cells by Focused Ion-Beam Exposure

    Takahiro Shinada, Takayuki Akimoto, Yanwei Zhu, Hisa Goke, Iwao Ohdomari

    BIOTECHNOLOGY AND BIOENGINEERING　108　(1)　222-225　2011/01

    DOI： 10.1002/bit.22917 　

    ISSN： 0006-3592

  11. Reliable Single Atom Doping and Discrete Dopant Effects on Transistor Performance

    Takahiro Shinada, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST　592-595　2010

    DOI： 10.1109/IEDM.2010.5703428 　

    ISSN： 2380-9248

  12. Performance enhancement of semiconductor devices by control of discrete dopant distribution

    M. Hori, T. Shinada, K. Taira, N. Shimamoto, T. Tanii, T. Endo, I. Ohdomari

    NANOTECHNOLOGY　20　(36)　365205　2009/09

    DOI： 10.1088/0957-4484/20/36/365205 　

    ISSN： 0957-4484

  13. A reliable method for the counting and control of single ions for single-dopant controlled devices

    T. Shinada, T. Kurosawa, H. Nakayama, Y. Zhu, M. Hori, I. Ohdomari

    NANOTECHNOLOGY　19　(34)　345202　2008/08

    DOI： 10.1088/0957-4484/19/34/345202 　

    ISSN： 0957-4484

  14. Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification

    D Ferrer, T Tanii, Matsuya, I, G Zhong, S Okamoto, H Kawarada, T Shinada, Ohdomari, I

    APPLIED PHYSICS LETTERS　88　(3)　2006/01

    DOI： 10.1063/1.2165205 　

    ISSN： 0003-6951

  15. Development of liquid-metal-ion source low-energy ion gun/high-temperature ultrahigh vacuum scanning tunneling microscope combined system

    M Uchigasaki, T Kamioka, T Hirata, T Shimizu, F Lin, T Shinada, Ohdomari, I

    REVIEW OF SCIENTIFIC INSTRUMENTS　76　(12)　2005/12

    DOI： 10.1063/1.2149001 　

    ISSN： 0034-6748

  16. Enhancing semiconductor device performance using ordered dopant arrays

    Takahiro Shinada, Shintaro Okamoto, Takahiro Kobayashi, Iwao Ohdomari

    Nature　437　(7062)　1128-1131　2005/10/20

    Publisher: Nature Publishing Group

    DOI： 10.1038/nature04086 　

    ISSN： 1476-4687 0028-0836

  17. Enhancing semiconductor device performance using ordered dopant arrays

    T Shinada, S Okamoto, T Kobayashi, Ohdomari, I

    NATURE　437　(7062)　1128-1131　2005/10

    DOI： 10.1038/nature04086 　

    ISSN： 0028-0836

  18. Selective growth of carbon nanostructures on nickel implanted nanopyramid array

    D Ferrer, T Shinada, T Tanii, J Kurosawa, G Zhong, Y Kubo, S Okamoto, H Kawarada, Ohdomari, I

    APPLIED SURFACE SCIENCE　234　(1-4)　72-77　2004/07

    DOI： 10.1016/j.apsusc.2004.05.180 　

    ISSN： 0169-4332

  19. Improvement of focused ion-beam optics in single-ion implantation for higher aiming precision of one-by-one doping of impurity atoms into nano-scale semiconductor devices

    T Shinada, H Koyama, C Hinoshita, K Imamura, Ohdomari, I

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　41　(3A)　L287-L290　2002/03

    DOI： 10.1143/JJAP.41.L287 　

    ISSN： 0021-4922

  20. Simple nanostructuring on silicon surface by means of focused beam patterning and wet etching

    M Koh, S Sawara, T Shinada, T Goto, Y Ando, Ohdomari, I

    APPLIED SURFACE SCIENCE　162　599-603　2000/08

    DOI： 10.1016/S0169-4332(00)00257-9 　

    ISSN： 0169-4332

  21. Flat-band voltage control of a back-gate MOSFET by single ion implantation

    T Shinada, A Ishikawa, C Hinoshita, M Koh, Ohdomari, I

    APPLIED SURFACE SCIENCE　162　499-503　2000/08

    DOI： 10.1016/S0169-4332(00)00239-7 　

    ISSN： 0169-4332

  22. Simple fabrication of high density concave nanopyramid array (NPA) on Si surface

    S Sawara, M Koh, T Goto, Y Ando, T Shinada, Ohdomari, I

    APPLIED SURFACE SCIENCE　159　481-485　2000/06

    DOI： 10.1016/S0169-4332(00)00118-5 　

    ISSN： 0169-4332

  23. New process for Si nanopyramid array (NPA) fabrication by ion-beam irradiation and wet etching

    M KoH, S Sawara, T Goto, Y Ando, T Shinada, Ohdomari, I

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　39　(4B)　2186-2188　2000/04

    DOI： 10.1143/JJAP.39.2186 　

    ISSN： 0021-4922

  24. Reduction of fluctuation in semiconductor conductivity by one-by-one ion implantation of dopant atoms

    T Shinada, A Ishikawa, C Hinoshita, M Koh, Ohdomari, I

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　39　(4A)　L265-L268　2000/04

    DOI： 10.1143/jjap.39.L265 　

    ISSN： 0021-4922

  25. Nano-fabrication of CDW and its negative resistance phenomenon

    H Kubota, T Sumita, S Takami, T Shinada, Ohdomari, I

    JOURNAL DE PHYSIQUE IV　9　(P10)　175-177　1999/12

    ISSN： 1155-4339

  26. Influence of secondary electron detection efficiency on controllability of dopant ion number in single ion implantation

    T Shinada, A Ishikawa, M Fujita, K Yamashita, Ohdomari, I

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　38　(6A)　3419-3421　1999/06

    DOI： 10.1143/JJAP.38.3419 　

    ISSN： 0021-4922

  27. Nano-fabricated CDW by ion-beam irradiation

    T Sumita, T Nagai, H Kubota, T Matsukawa, Ohdomari, I

    SYNTHETIC METALS　103　(1-3)　2234-2237　1999/06

    DOI： 10.1016/S0379-6779(98)00282-3 　

    ISSN： 0379-6779

  28. Simple Fabrication of Nanopyramid Array (NPA) on Si Surface by Means of Focused Ion Beam Patterning and Wet Etching

    KOH M., SHINADA T., SAWARA S., GOTO T., ANDO Y., OHDOMARI I.

    1999　184-185　1999

  29. Simple fabrication of nanopyramid array (NPA) on Si surface by means focused ion beam patterning wet etching

    Meishoku Koh, Takahiro Shinada, Souich Sawara, Tomomi Goto, Yoshinori Ando, Iwao Ohdomari

    Ext. Abst. SSDM　1999　184-185　1999

  30. Key Technology of Focused Ion Beam (FIB) System for Single Ion Implantation

    Takashi Matsukawa, Takahiro Shinada, Toshinori Fukai, Ken-ichi Hara, Iwao Ohdomari

    Journal of Vacuum Science and Technology B　16　(4)　2479-2483　1998

    DOI： 10.1116/1.590194 　

    ISSN： 0734-211X

  31. The Current Status of Single Ion Implantation

    Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa, Iwao Ohdomari

    Journal of Vacuum Science and Technology B　16　(4)　2489-2493　1998

    DOI： 10.1116/1.590196 　

    ISSN： 0734-211X

  32. The Current Status of Single Ion Implantation

    Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa, Iwao Ohdomari

    Journal of Vacuum Science and Technology B　16　(4)　2489-2493　1998

    DOI： 10.1116/1.590196 　

    ISSN： 0734-211X

  33. Key Technology of Focused Ion Beam (FIB) System for Single Ion Implantation

    Takashi Matsukawa, Takahiro Shinada, Toshinori Fukai, Ken-ichi Hara, Iwao Ohdomari

    Journal of Vacuum Science and Technology B　16　(4)　2479-2483　1998

    DOI： 10.1116/1.590194 　

    ISSN： 0734-211X

  34. Damage and contamination free fabrication of thin Si wires with highly controlled feature size

    T Shinada, H Kimura, Y Kumura, Ohdomari, I

    APPLIED SURFACE SCIENCE　117　684-689　1997/06

    DOI： 10.1016/S0169-4332(97)80164-X 　

    ISSN： 0169-4332

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Books and Other Publications 2

  1. Single Atom Nanoelectronics

    Editors E. Prati, T. Shinada

    Pan Stanford Publishing　2012

    ISBN: 9789814316316

  2. テクノカレント：半導体テクノロジーのトレンド－微細化から等価的微細化と多様化へ

    世界経済情報サービス　2008

Presentations 26

  1. Single ion implantation of Ge donor impurity in silicon transistors International-presentation

    E. Prati, Y. Chiba, M. Yano, K. Kumagai, M. Hori, G. Ferrari, T. Shinada, T. Tanii

    2015 Silicon Nanoelectronics Workshop　2015/06/14

  2. Atomic Scale Devices: Advancements and Directions International-presentation

    E. Prati, T. Shinada

    2014 International Electron Devices Meeting (IEDM)　2014/12/15

  3. Methodology of single atom control for quantum processing in silicon and diamond International-presentation

    T. Shinada, E. Prati, S. Tamura, Y. Fukui, G. Koike, T. Tanii, T. Teraji, S. Onoda, T. Ohshima, L. P. McGuinness, L. Rogers, B. Naydenov, E. Wu, F. Jelezko, J. Isoya

    16th Takayanagi Kenjiro Memorial Symposium　2014/11/11

  4. Opportunity of Single Atom Control for Quantum Processing in Silicon International-presentation

    T. Shinada, P. Enrico, S. Tamura, T. Tanii, T. Teraji, S. Onoda, T. Ohshima, L.P. McGuinness, L. Rogers, B. Naydenov, F. Jelezko, J. Isoya

    2014 Silicon Nanoelectronics Workshop　2014/06/08

  5. Comparison of Self-Heating Effect (SHE) in Short-Channel Bulk and Ultra-Thin BOX SOI MOSFETs: Impacts of Doped Well, Ambient Temperature, and SOI/BOX Thicknesses on SHE International-presentation

    T. Takahashi, T. Matsuki, T. Shinada, Y. Inoue, K. Uchida

    2013 International Electron Devices Meeting (IEDM)　2013/12

  6. Quantum transport in deterministically implanted single-donors in Si FETs International-presentation

    T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati

    2011 International Electron Devices Meeting (IEDM)　2011/12

  7. 単一原子ドーピング法と離散的ドーパントデバイス評価

    電気学会電子デバイス研究会　2011

  8. ドーパント位置制御による電界効果トランジスタの相互コンダクタンス評価

    第58回応用物理学関連連合講演会　2011

  9. 低エネルギー集束イオンビームによる細胞活性の修飾

    第58回応用物理学関連連合講演会　2011

  10. Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method

    T. Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, I. Ohdomari

    2010 International Electron Devices Meeting (IEDM)　2010/12

  11. 基板バイアス印加による単一イオン個数制御性の検証

    第71回応用物理学会学術講演会　2010

  12. Enhancement of Electron Transport Property in FET with Asymmetric Ordered Dopant Distribution

    18th International Conference on Ion Implantation Technology (IIT2010)　2010

  13. Performance evaluation of transistors with discrete dopants by single-ion doping method

    21st International Conference on the Application of Accelerators in Research and Industry (CAARI2010)　2010

  14. Modulation of viability of live cells by focused ion-beam implantation

    17th International Conference on Ion Beam Modification of Materials (IBMM2010)　2010

  15. Evaluation of Singularity by applying substrate bias in single ion implantation method

    2010

  16. Improving Single Dopant Detection Efficiency by Controlling Substrate Bias in Single Ion Implantation Method

    TECHCON2010　2010

  17. Reliable Single Atom Doping and Discrete Dopant Effects on Transistor Performance

    International Electron Device Meeting (IEDM)　2010

  18. Functional modification of living cells by focused gold-ion implantation

    10th International Conference on Atomically Controlled Srufaces, Interfaces, and Nanostructures (ACSIN2009)　2009

  19. 離散的ドーパント位置のデバイス特性に及ぼす影響調査

    第70回応用物理学会学術講演会　2009

  20. シングルイオン注入法の基板バイアス印加による単一性改善に関する研究

    第70回応用物理学会学術講演会　2009

  21. 集束Auイオンビームによる細胞機能修飾

    第70回応用物理学会学術講演会　2009

  22. Performance Evaluation of Semiconductor Device with Asymmetric Discrete Dopant Distribution

    TECHCON2009　2009

  23. Recent advance in single-ion implantation method for single-dopant devices (Invited)

    9th International Workshop on Junction Technology (IWJT2009)　2009

  24. Single Ion Implantation for Fluctuation Control (Invited)

    17th International Conference on Ion Implantation Technology (IIT2008)　2008

  25. Enhancing Semiconductor Device Performance using Ordered Dopant Arrays

    International Workshop on Materials and Life Science using Nuclear Probes from Heavy-Ion Accelerators　2008

  26. Single Ion Implantation for Single-Dopant Controlled Devices (Invited)

    20th International Conference on the Application of Accelerators in Research and Industry (CAARI2008)　2008

Show all Show first 5

Research Projects 17

  1. Application of deterministic dopant devices to probabilistic information processing, quantum computing/measurement

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2023/04/01 - 2028/03/31

  2. Development of single dopant circuit by deterministic doping and application to stochastic processing

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Tohoku University

    2018/04/01 - 2023/03/31

  3. Development of single dopant circuit by deterministic doping and application to stochastic processing

    Shinada Takahiro, Asai Tetsuya, Tanii Takashi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Challenging Exploratory Research

    Institution: Tohoku University

    2016/04/01 - 2019/03/31

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    In this research, we aimed to incerase the ion species in the deterministic doping method, develop a circuit in which a single dopant dominates the operation, and model processing in the brain with quantum effects. Then, by realizing brain-type quantum circuits that perform ultra-low-power, parallel computations, we aimed to establish a foundation for innovative information processing systems. Specifically, we established the single dopant quantum dot formation process by the deterministic doping method, and succeeded in forming a new quantum system consisting of germanium-vacancy complex, which is an achievement that enables room temperature operation. In addition, we have developed a single-dopant neural network circuit that operates using thermal noise and fluctuation for the first time, and built the basic technologies for exploring a new information processing device and circuit.

  4. Control of quantum material properties by deterministic doping method

    Shinada Takahiro, TABE Michiharu, ISOYA Junichi

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    2013/04/01 - 2017/03/31

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    The first purpose of this study was to establish a deterministic doping method that realizes doping to regions of 10 nm or less and is applicable to next generation devices.The second purpose was to control physical properties of quantum devices including single dopant silicon devices and single silicon - vacancy diamond devices. Specifically, we have developed (1) a single dopant doping process module in the region of 10 nm or less. We succeeded in observation and control of (2) quantum transport in single dopant silicon devices and (3) luminescence from single dopant silicon - vacancy in diamonds. Establishment of the deterministic doping method contributing to the future extension of CMOS technology and realization of its quantum physical property control are major achievements.

  5. Functional modification of live cells by focused ion beam doping

    SHINADA Takahiro, ASAHI Toru

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Challenging Exploratory Research

    2012/04/01 - 2014/03/31

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    A novel heavy-metal implantation method for living cells using focused ion-beam (FIB) were proposed. We performed Au and As ion doping into living cells by using the FIB implantation method; then intracellular level of adenosine triphosphate (ATP) molecule, which is the energy storing molecule for organisms, was evaluated. The ATP level of the implanted cells was found to be modified compared with that of the non-implanted control cells. Our ion implantation technique may be a more accurate tool to quantitatively elucidate the dose-dependent effects of dopants than the conventional methods.

  6. 単一不純物原子が制御されたナノデバイス製造技術の開発

    品田 賢宏

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 萌芽研究

    Institution: 早稲田大学

    2007 - 2008

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    ナノデバイスでは、その電気的特性を制御するために導入される不純物原子の離散性が顕在化する。不純物原子の不規則な分布故、デバイス毎に不純物原子個数および位置がゆらぎ、半導体デバイスの電気的特性がバラつく結果、ナノデバイス構造が形成されても正常に動作しない可能性が高い。本研究では、不純物原子を1個ずつ注入可能な単一イオン注入法を用いて不純物原子配列方法が電気的特性に与える影響を系統的に調査すると共に、既存の半導体製造技術によって実現するプロセスを考案し、ナノデバイスで初めて顕在化する不純物ゆらぎという本質的問題の解決に現実的な道筋の呈示を試みた。 まず、不純物原子位置のデバイス特性への影響を調査するために、不純物分布を偏在させたSi抵抗体を試作した。チャネル中央に不純物分布を有する抵抗体では、ソースとドレインを入れ替えても特性は対称であったが、チャネル中央からソース側へ200nmの位置に不純物を配置した抵抗体では、ソースとドレインの入替によって特性が変化することが判明した。不純物原子がソース側よりドレイン側に偏在する方が、ドレイン電流が高くなることを見出した。ナノデバイスで顕在化する不純物原子の離散性とゆらぎの電気的特性への影響を初めて実験的に検証した成果である。 不純物原子の位置が制御された半導体デバイスをより現実的なものとするために、既存技術もしくは従来技術の延長線上にある技術によって不純物原子の空間制御を可能とするプロセスを開発した。シリコン抵抗体上に電子線リソグラフィーを用いて直径50nm、ピッチ100nmのイオン注入窓を有するマスクを形成し、約50nmの精度でシリコン抵抗体に不純物原子を規則配列させることが可能となった。不純物原子数はボアソン分布に従ってゆらぐものの、位置制御によって電気特性改善が期待できる成果である。

  7. 不純物原子の規則配列を有する半導体デバイスの開発

    品田 賢宏

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 若手研究(A)

    Institution: 早稲田大学

    2006 - 2008

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    ナノデバイスでは、その電気的特性を制御するために導入される不純物原子の離散性が顕在化し、ランダムな分布故、デバイス毎に不純物原子個数および位置がゆらぐ結果、デバイス特性がバラつく、いわゆる"不純物ゆらぎ"が問題となる。本研究では、単一イオン注入法を用いて、半導体晶中に不純物原子を規則的に配列させた新しい半導体デバイスを創製し、不純物原子配列方法が半導体電気的特性に与える影響を調査する。 不純物原子分布のデバイス特性への影響を調査するために、不純物分布を偏在させたSi抵抗体を試作した。電子線リソグラフィーを用いて、長さ500nm、幅2.5μmの抵抗体上に幅200nmのイオン注入用窓を有するマスクを形成した。イオン注入窓をチャネル中央、およびチャネル中央からソース側へ200nmの位置に設け、30keVのPイオンを1×10^11cm^-2注入し、2種類の不純物分布を有する抵抗体を実現した。ドレイン側に偏在する抵抗体は、ソース側に偏在させた抵抗体を電気的にソース/ドレインを入れ替えることによって実現している。レジスト剥離後、窒素雰囲気中、900℃、5minのアニール仁よって注入イオンの電気的活性化を行った。 ドレイン電流のゲート電圧依存性を計測したところ、チャネル中央に不純物分布を有する抵抗体では、ソースとドレインを入れ替えても特性は対称であったが、チャネル中央からソース側へ200nmの位置に不純物を配置した抵抗体では、ソースとドレインの入替によって特性が変化することが判明した。不純物原子がソース側よりドレイン側に偏在する方が、ドレイン電流が高くなる結果が得られている。ナノデバイスで顕在化する不純物原子の離散性を考慮したナノデバイスのモデリングが世界的中で進められているが、サブミクロンデバイスにおいて不純物分布の違いが電気的特性に及ぼす影響を初めて実験的に検証した。

  8. Development of new high-speed electronic devices using 1D quantum structures

    HORIKOSHI , Yoshiji, OHDOMARI Iwao, MIURA Michiko, SHINADA Takahiro, KAWAHARAZUKA Atsushi, NISHINAGA Jiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Waseda University

    2005 - 2008

  9. Novel semiconductors with controlled both single-atom number and position

    ODOMARI Iwao, HORIKOSHI Yoshiji, SHINADA Takahiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (A)

    Institution: Waseda University

    2005 - 2007

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    Doping of impurity atoms into semiconductors is essential to achieving the proper function of semiconductor devices. So far the semiconductor has been assumed to be homogeneously doped in the active channel region. In the nano-scale semiconductor devices, however, the channel region will contain few dopant atoms and the assumption of uniform dopant distribution is no longer feasible. In this situation, the statistical fluctuation in dopant atom number due to random Poisson distribution will elicit deleterious effects on the device's functioning. We have been developing a single-ion implantation(SII) method that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached In this study, we have improved the beam diameter approximately 10nm by modifying the focused ion beam optics for the SII and achieved the single-ion detection efficiency 100% by detecting the change in drain-current induced by single-ion incidence. We have then fabricated semiconductor devices with ordered dopant arrays by the SII. Electrical measurements of the resulting transistors revealed that there are fewer device-to-device fluctuations in the threshold voltage (V_<th> ; the turn-on voltage of the device) of the devices with ordered dopant arrays than of those with conventional randomly doped distribution. We also found that the average value of V_<th> for the devices with ordered dopants is two times lower than that of the devices with a random distribution of dopants. We explain this pronounced difference in threshold voltage as follows : the uniformity of electrostatic potential lowers the voltage required to open the channel from source to drain, which allows for early turn-on in those parts of the channel that correspond to the positioning of the implanted ions and results in the lower threshold voltage. It must be noted that current technology, which is based on random distribution of ions, cannot control either the number or the positioning of the ions, while our method can control both the number and the positioning of the ions and that this control is essential for future nanoscale semiconductor devices.

  10. イオン注入法を利用したナノ構造スピンデバイスに関する研究

    堀越 佳治, 大泊 巌, 品田 賢宏, 小野満 恒二

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 特定領域研究

    Institution: 早稲田大学

    2004 - 2005

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    磁性イオンを半導体中にドーピングすると半導体母材との非混和性により、熱処理によって磁性イオンのクラスターが発生する。このクラスターを半導体中に一次元に規則正しく配列することにより、磁場の印加に伴う巨大磁気抵抗を発生させ、将来の不揮発性省消費電力メモリーとしての応用の可能性を探るのが本研究の目的であった。まず一次元半導体構造を形成する技術の確立から研究を開始し、MEE法を用いた選択エピタキシャル成長法の最適化、ファセット制御技術の確立により幅20nm、長さ100nmの量子細線を再現性良く作製する技術を実現した。これらの細線に磁性イオンとしてNiを、単一イオンのレベルまで制御可能な収束イオン注入技術によって注入し、熱処理後の電気伝導特性の磁場依存性を評価した。その結果磁気抵抗はきわめて小さく、期待した結果は得られなかった。この原因の一つとして、イオン注入による損傷が十分回復していないことが考えられた。そこで分子線エピタキシー装置を用い、MEEモードで低温における高濃度MnドープGaAs薄膜の成長を行った。この結晶に熱処理を施すことによって均質なMnAsクラスター形成に成功した。具体的な方法は(001)GaAs基板上にMn1原子層/GaAs3分子層の対を10周期成長し、これを熱処理することによって均質なMnAsクラスターを得た。得られた薄膜は顕著な磁気抵抗効果を示し、この方法の有効性が明らかになった。今後層構造の最適化を図るとともに量子細線構造への応用を試みる。

  11. One-by-oneドーピング法による特性ゆらぎのない極微半導体デバイスの実現

    品田 賢宏

    Offer Organization: 日本学術振興会

    System: 科学研究費助成事業

    Category: 若手研究(B)

    Institution: 早稲田大学

    2002 - 2002

  12. Study on suppression of fluctuation in semiconductor electrical characteristics by single ion inplantaticn

    ODOMARI Iwao, TOYOSHIMA Yoshiaki, SHINADA Takahiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Waseda University

    2000 - 2002

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    In order to develop potentialities of single ion implantation through die precise control of solid-state physical and chemical properties in nano-scale semiconductors by one-by-one implantation of dopant atoms, we demonstrated the control of the electrical characteristics in ultrafine semiconductor devices and the selective growth of carbon nanotubes/fibers at catalytic ion-implanted site as follows. Control of electrical properties in ultrafine semiconductor devices The influence of dopant atom position on V_<th> in silicon wire MOSFETs was experimentally investigated for the first time by means of SIX. P single-ions were implanted into n-type channel region at intervals of 100nm. V_<th> was evaluated and compared with that of conventional FETs in which the dopant atoms were randomly introduced. Our results indicate that V_<th> fluctuation of FETs with ordered dopant distribution was smaller than that of FETs with random channel doping. It was also found that the average value of V_<th> of FETs with the ordered dopants was much lower than that of FETs with the random distribution of dopants, even though the dopant number was exactly same for both FETs. This indicates that it is important to control the dopant position for the precise control of V_<th>. Position control of carbon nanotubes/fibers The precise control of individual CNFs position on substrate is essential for opening up novel device applications. We attempted to control the growth position of CNFs by means of focused Ni ion implantation and the subsequent plasma chemical vapor deposition (CVD). Ni ions were implanted at 30kV into n-type Si(100) substrate through the thermally grown oxide film. After a removal of thermal oxide, an antenna edge 2450MHz microwave plasma assistant CVD was carried out at 600℃ for 10 min with pure hydrogen and methane over 99.9999% for the CNF growth. The selective growth of CNFs on Ni-implanted sites was observed. It was confirmed for the first time that the implanted Ni ions act as a catalyst for the synthesis of CNFs.

  13. High-tenperature SIM observation under ion irradiation in order to modify surfaces in namscale

    ODOMARI Iwao, SHIMADA Takahiro

    Offer Organization: Japan Society for the Promotion of Science

    System: Grants-in-Aid for Scientific Research

    Category: Grant-in-Aid for Scientific Research (B)

    Institution: Waseda University

    1999 - 2001

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    1. A high-tenperature low-energy ion-gun/scanning-tunneling-microscope (STM) conbined system has been developed in order to clarify the microscopic aspects of annealing processes of ion-irradiated Si surfaces. This system enables us to perform atom-resolved high tenperature STM observation and ion beam irradiation simultaneously in ultrahigh vacuum conditions. Taking great advantage of this system, we have successfully obtained sequential STM images of high-temperature Si (111) surfaces irradiated with Ar' single ions. The STM results have shown that the surface defects induced by single ion irradiation show various changes in size and shape, which is considered to result from diffusion of vacancies and interstitial atoms in the substrates, diffusion of atoms on the surface, and from an anisotropic character of the surface atonic arrangement. And we succeed in real-time STM observation under 0^+ ion irradiation. Next target is dopant ion irradiation process. 2. We have to simulate collision cascade inbulk and following annealing, because STM tipobserves surface information only. First principle calculation, molecular dynamics, Monte-Carlo simulation is applied to investigate the phenomenon we observed.

  14. Functional modification of cells by single-ion implantation Competitive

  15. Control of semiconductor device performance by single-ion implantation Competitive

  16. 単一イオン注入法による細胞機能修飾 Competitive

  17. 単一イオン注入法による半導体ナノ物性制御 Competitive

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Works 6

  1. シングルイオン注入を用いたトランジスタ特性制御の研究

    2010 -

  2. Control of transistor performances by single-ion implantation

    2010 -

  3. シングルドーパントデバイスの研究 (NTT)

    2009 -

  4. Single-dopant devices (NTT)

    2009 -

  5. ドーパント規則配列を有する半導体のデバイス特性評価 (Semiconductor Research Corporation)

    2008 -

  6. Device Performance Evaluation of Semiconductors with Ordered Dopant Arrays (Semiconductor Research Corporation)

    2008 -

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