Details of the Researcher

PHOTO

Nguyen Thi Van Anh
Section
Center for Science and Innovation in Spintronics
Job title
Assistant Professor
Degree

  • 博士（理学）（大阪大学）

  • 修士（物理）（Vietnam National University，Hanoi)

Research History 3

  • 2018/06 - Present
    Tohoku University　Center for Science and Innovation in Spintronics　Assistant Professor

  • 2015/10 - 2018/03
    Osaka University　Graduate School of Engineering　Postdoc researcher

  • 2006/01 - 2015/09
    Hanoi National University of Education, Vietnam　Department of Physics　Lecturer

Education 3

  • Osaka University　Graduate School of Engineering Science　PhD

    2012/04 - 2015/09

  • Vietnam National University　Physics　Master

    2003/11 - 2005/12

  • Vietnam National University　Physics　Undergraduate

    1999/09 - 2003/06

Professional Memberships 3

  • The Magnetics Society of Japan

    2020/09 - Present

  • IEEE

    2020/01 - Present

  • THE JAPAN SOCIETY OF APPLIED PHYSICS

    2014/04 - Present

Research Interests 4

  • MRAM

  • High frequency magnetization dynamics

  • Oxide electronics

  • Spintronics

Research Areas 1

  • Natural sciences / Magnetism, superconductivity, and strongly correlated systems / Spintronics, Oxide Electronics, High-frequency ferromagnetic resonance

Awards 3

  1. Best Student Poster

    2014/12　18th SANKEN International Symposium　Investigation of dc transport dynamics in strongly correlated (La,Pr,Ca)MnO3 film using an insulator-metal composite model for THz conductivity

  2. Best Presentation

    2014/03　4th International Symposium on Terahertz Nanoscience　Conductive properties through the metal insulator transition in the strongly correlated (La,Pr,Ca)MnO3 film investigated by the THz Time Domain Spectroscopy

  3. Award for participation as a Coordinator in the 39th International Physics Olympiad (IPho)

    2008/07　Ministry of Education and Training, Vietnam

Papers 38

  1. Enhanced field-like torque generated from the anisotropic spin-split effect in triple-domain RuO2 for energy-efficient spin–orbit torque magnetic random-access memory Peer-reviewed

    T. V. A. Nguyen, H. Naganuma, T. N. H. Vu, S. DuttaGupta, Y. Saito, D. Vu, Y. Endo, S. Ikeda, T. Endoh

    Adv. Sci.　2025　2413165-1-2413165-8　2025/03

    DOI： 10.1002/advs.202413165 　

  2. Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction Peer-reviewed

    T. V. A. Nguyen, H. Naganuma, H. Honjo, S. Ikeda, T. Endoh

    AIP Advances　14　025018-025018　2024/02/01

    DOI： 10.1063/9.0000789 　

  3. Investigation of the dynamic magnetic properties in RuO2/Co-Fe-B stack film

    T. V. A. Nguyen, Y. Saito, H. Naganuma, D. Vu, S. Ikeda, T. Endoh

    IEEE Transactions on Magnetics　2024

    DOI： 10.1109/TMAG.2024.3404066 　

  4. Evaluation of the magnetization dynamics in various thick YIG films using our proposed measurement technique Peer-reviewed

    Thi Van Anh Nguyen, Yasushi Endo

    AIP Advances　12　(3)　035234-035234　2022/03/01

    Publisher: AIP Publishing

    DOI： 10.1063/9.0000302 　

    eISSN： 2158-3226

    More details Close

    This paper describes the evaluation of magnetization dynamics in YIG polycrystalline films with various thicknesses using our proposed measurement technique. The saturation magnetostriction ( λs) are approximately less than −1.0×10−6 regardless of the film thickness and are lower than that of bulk polycrystalline YIG, which might be attributed to the structural and/or magnetic inhomogeneities. On the other hand, the in-plane effective damping constant ( αeff) decreases approximately from 0.00384±0.00029 to 0.00316±0.00013 with the increase of film thickness, and their values are much higher than those of nano-meter thick and micro-meter thick YIG films deposited on GGG substrates. The reason for this difference may be that the extrinsic damping originating from the magnetic inhomogeneities are enhanced in the film plane. In addition, αeff slightly increases as λs decreases. This tendency is opposite to those of Ni-Fe and Fe-Si polycrystalline films, and the correlation between αeff and λs does not appear. Therefore, these results suggest that magnetic inhomogeneities are mainly influenced to both αeff and λs in the film plane.

  5. Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields

    T. V. A. Nguyen, Y. Saito, H. Naganuma, S. Ikeda, T. Endoh, Y. Endo

    AIP Advances　12　(3)　035133-035133　2022/03/01

    Publisher: AIP Publishing

    DOI： 10.1063/9.0000297 　

    eISSN： 2158-3226

    More details Close

    Dynamic magnetic properties of Ta-O/Co20Fe60B20 bilayer films are strongly influenced by the oxidation condition of the Ta-O layer. The oxidation of the Ta-O layer by a slight amount of oxygen with a pressure ( POxygen) of 0.03 Pa decreases in-plane damping constant ( αIP), and increases the effective magnetization (4π Ms,eff). Then, both αIP and 4π Ms,eff maintain their values by increasing POxygen up to 0.3 Pa. The out-of-plane damping constant ( αOP) showed a similar tendency to that of αIP against POxygen, although αOP is much smaller than αIP in every POxygen. αOP reaches to 0.0033 for sample oxidized at 0.03 Pa. It was suggested that αIP consists of both the intrinsic damping and the extrinsic damping, while αOP is closer to the intrinsic damping. The control of αOP and αIP by the oxidation would be beneficial in designing the high frequency spintronic devices.

  6. Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers Peer-reviewed

    H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

    IEEE Transactions on Magnetics　58　(2)　4400105-1-4400105-6　2022/02

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/tmag.2021.3078710 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  7. Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer Peer-reviewed

    K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V. A. Nguyen, T. Watanabe, S. Ikeda, T. Endoh

    IEEE Transactions on Magnetics　58　(2)　4400406-1-4400406-6　2022/02

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/tmag.2021.3083575 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  8. Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer

    H. Honjo, H. Naganuma, K. Nishioka, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

    IEEE Transactions on Magnetics　58　(8)　1-1　2022

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/tmag.2022.3151562 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  9. Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability

    K. Nishioka, H. Honjo, H. Naganuma, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

    AIP Advances　11　(2)　2021/02/01

    DOI： 10.1063/9.0000048 　

    eISSN： 2158-3226

  10. Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis

    H. Honjo, H. Naganuma, T. V. A. Nguyen, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh

    AIP Advances　11　(2)　025211-025211　2021/02/01

    Publisher: AIP Publishing

    DOI： 10.1063/9.0000047 　

    eISSN： 2158-3226

  11. Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm

    H. Naganuma, S. Miura, H. Honjo, K. Nishioka, T. Watanabe, T. Nasuno, H. Inoue, T. V.A. Nguyen, Y. Endo, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh

    Digest of Technical Papers - Symposium on VLSI Technology　2021-June　2021

    ISSN： 0743-1562

  12. First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

    K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, S. Ikeda, T. Endoh

    IEEE Transactions on Electron Devices　1-6　2021

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/ted.2021.3074103 　

    ISSN： 0018-9383

    eISSN： 1557-9646

  13. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance 10-11

    S. Miura, K. Nishioka, H. Naganuma, T. V.A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, T. Endoh

    Digest of Technical Papers - Symposium on VLSI Technology　2020-　2020/06/01

    Publisher: Institute of Electrical and Electronics Engineers Inc.

    DOI： 10.1109/VLSITechnology18217.2020.9265104 　

    ISSN： 0743-1562

  14. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance > 10^11 Peer-reviewed

    S. Miura, K. Nishioka, H. Naganuma, T. V. A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, T. Endoh

    VLSI Symposium　1-6　2020/06

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/ted.2020.3025749 　

    ISSN： 0018-9383

    eISSN： 1557-9646

  15. Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface Peer-reviewed

    H. Honjo, M. Niwa, K. Nishioka, T. V. A. Nguyen, H. Naganuma, Y. Endo, M. Yasuhira, S. Ikeda, T. Endoh

    IEEE Transactions on Magnetics　56　(8)　1-4　2020/05

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/tmag.2020.3004576 　

    ISSN： 0018-9464

    eISSN： 1941-0069

  16. Magnetic properties of Co film in Pt/Co/Cr2O3/Pt structure Peer-reviewed

    T. V. A. Nguyen, Y. Shiratsuchi, H. Sato, S. Ikeda, T. Endoh, Y. Endo

    AIP Advances　10　(1)　015152-015152　2020/01/28

    Publisher: AIP Publishing

    DOI： 10.1063/1.5130439 　

    eISSN： 2158-3226

  17. First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400 oC thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology Peer-reviewed

    H. Honjo, T. V. A. Nguyen, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

    IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2019　2019　28.5.1-28.5.4　2020/01/13

    DOI： 10.1109/IEDM19573.2019.8993443 　

    ISSN： 0163-1918

  18. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹ Peer-reviewed

    Sadahiko Miura, Koichi Nishioka, Hiroshi Naganuma, Nguyen T. V. A., Hiroaki Honjo, Shoji Ikeda, Toshinari Watanabe, Hirofumi Inoue, Masaaki Niwa, Takaho Tanigawa, Yasuo Noguchi, Toru Yoshizuka, Mitsuo Yasuhira, Tetsuo Endoh

    IEEE Transactions on Electron Devices　1-6　2020

    Publisher: Institute of Electrical and Electronics Engineers (IEEE)

    DOI： 10.1109/ted.2020.3025749 　

    ISSN： 0018-9383

    eISSN： 1557-9646

  19. Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers Peer-reviewed

    H. Honjo, T. V. A. Nguyen, M. Yasuhira, M. Niwa, S. Ikeda, H. Sato, T. Endoh

    AIP Advances　9　(12)　125330-125330　2019/12/26

    Publisher: AIP Publishing

    DOI： 10.1063/1.5129794 　

    eISSN： 2158-3226

  20. Insertion layer thickness dependence of Magnetic and Electrical properties for double CoFeB/MgO interface magnetic tunnel junction Peer-reviewed

    S. Miura, T. V. A. Nguyen, Y. Endo, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, T. Endoh

    IEEE Trans. Mag.　2019/03

  21. Energy condition of isothermal magnetoelectric switching of perpendicular exchange bias in Pt/Co/Au/Cr <inf>2</inf> O <inf>3</inf> /Pt stacked film Peer-reviewed

    Thi Van Anh Nguyen, Yu Shiratsuchi, Shogo Yonemura, Tatsuo Shibata, Ryoichi Nakatani

    Journal of Applied Physics　124　(23)　233902_1-233902_7　2018/12/21

    DOI： 10.1063/1.5047563 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  22. Antiferromagnetic domain wall creep driven by magnetoelectric effect Peer-reviewed

    Yu Shiratsuchi, Hiroaki Yoshida, Yoshinori Kotani, Kentaro Toyoki, Thi Van Anh Nguyen, Tetsuya Nakamura, Ryoichi Nakatani

    APL Materials　6　(12)　121104_1-121104_9　2018/12/01

    DOI： 10.1063/1.5053928 　

    eISSN： 2166-532X

  23. Magnetoelectric control of antiferromagnetic domain of Cr2O3 thin film toward spintronics application Peer-reviewed

    Y. Shiratsuchi, T. V. A. Nguyen, R. Nakatani

    J. Magn. Soc. Jpn.　42　(6)　119-126　2018/11

  24. Isothermal switching of perpendicular exchange bias using magnetoelectric effect

    T. V. A. Nguyen, Y. Shiratsuchi, R. Nakatani

    IEICE Tech. Rep. MR2017-25　117　(247)　47-51　2017/10

  25. Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity Peer-reviewed

    Thi Van Anh Nguyen, Yu Shiratsuchi, Atsushi Kobane, Saori Yoshida, Ryoichi Nakatani

    JOURNAL OF APPLIED PHYSICS　122　(7)　073905_1-073905_5　2017/08

    DOI： 10.1063/1.4991053 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  26. Pulse-voltage-driven dynamical switching of perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt thin film Peer-reviewed

    Thi Van Anh Nguyen, Yu Shiratsuchi, Ryoichi Nakatani

    APPLIED PHYSICS EXPRESS　10　(8)　083002_1-083002_4　2017/08

    DOI： 10.7567/APEX.10.083002 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  27. Simultaneous achievement of high perpendicular exchange bias and low coercivity by controlling ferromagnetic/antiferromagnetic interfacial magnetic anisotropy Peer-reviewed

    Yu Shiratsuchi, Wataru Kuroda, Thi Van Anh Nguyen, Yoshinori Kotani, Kentaro Toyoki, Tetsuya Nakamura, Motohiro Suzuki, Kohji Nakamura, Ryoichi Nakatani

    JOURNAL OF APPLIED PHYSICS　121　(7)　073902_1-073902_7　2017/02

    DOI： 10.1063/1.4976568 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  28. Investigation of nanodomain properties in the phase-separated manganite by probing electron dynamics

    A. N. Hattori, A. Nguyen, M. Nagai, M. Ichimiya, M. Ashida, H. Tanaka

    2016/05

  29. Electrical transport properties of (La,Pr,Ca)MnO3 nanowires investigated using terahertz time domain spectroscopy Peer-reviewed

    T. V. A. Nguyen, A. N. Hattori, M. Nagai, T. Nakamura, M. Ashida, H. Tanaka

    JOURNAL OF APPLIED PHYSICS　119　(12)　125102_1-125102_4　2016/03

    DOI： 10.1063/1.4944601 　

    ISSN： 0021-8979

    eISSN： 1089-7550

  30. Electrical transport properties in phase-separated manganite nanowires investigated using terahertz time domain spectroscopy

    A. Nguyen, A. N. Hattori, M. Nagai, T. Nakamura, K. Fujiwara, M. Ashida, H. Tanaka

    2015/09

  31. Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films Peer-reviewed

    Takuro Nakamura, Azusa N. Hattori, Thi Van Anh Nguyen, Kohei Fujiwara, Hidekazu Tanaka

    APPLIED PHYSICS EXPRESS　8　(7)　073201_1-073201_13　2015/07

    DOI： 10.7567/APEX.8.073201 　

    ISSN： 1882-0778

    eISSN： 1882-0786

  32. Identification of Giant Mott Phase Transition of Single Electric Nanodomain in Manganite Nanowall Wire Peer-reviewed

    Azusa N. Hattori, Yasushi Fujiwara, Kohei Fujiwara, Thi Van Anh Nguyen, Takuro Nakamura, Masayoshi Ichimiya, Masaaki Ashida, Hidekazu Tanaka

    NANO LETTERS　15　(7)　4322-4328　2015/07

    DOI： 10.1021/acs.nanolett.5b00264 　

    ISSN： 1530-6984

    eISSN： 1530-6992

  33. Effects of Mn, Cu doping concentration to the properties of magnetic nanoparticles and arsenic adsorption capacity in wastewater Peer-reviewed

    Tran Minh Thi, Nguyen Thi Huyen Trang, Nguyen Thi Van Anh

    APPLIED SURFACE SCIENCE　340　166-172　2015/06

    DOI： 10.1016/j.apsusc.2015.02.132 　

    ISSN： 0169-4332

    eISSN： 1873-5584

  34. Estimation of dc transport dynamics in strongly correlated (La,Pr,Ca)MnO3 film using an insulator-metal composite model for terahertz conductivity Peer-reviewed

    T. V. A. Nguyen, A. N. Hattori, M. Nagai, T. Nakamura, K. Fujiwara, M. Ashida, H. Tanaka

    Appl. Phys. Lett.　105　(2)　023502　2014/07/14

    DOI： 10.1063/1.4890109 　

  35. Estimation of dc transport dynamics in strongly correlated (La,Pr,Ca)MnO3 film using an insulator-metal composite model for terahertz conductivity Peer-reviewed

    T. V. A. Nguyen, A. N. Hattori, M. Nagai, T. Nakamura, K. Fujiwara, M. Ashida, H. Tanaka

    APPLIED PHYSICS LETTERS　105　(2)　023502_1-023502_4　2014/07

    DOI： 10.1063/1.4890109 　

    ISSN： 0003-6951

    eISSN： 1077-3118

  36. Conductive properties through the metal insulator transition in the strongly correlated (La,Pr,Ca)MnO3 film investigated by the THz Time Domain Spectroscopy

    T. V. A. Nguyen, A. N. Hattori, M. Nagai, T. Nakamura, K. Fujiwara, M. Ashida, H. Tanaka

    2014/03

  37. Investigation of effective carrier characteristics in strongly correlated (La,Pr,Ca)MnO3 films by the THz Time Domain Spectroscopy

    T. V. A. Nguyen, A. N. Hattori, M. Nagai, T. Nakamura, K. Fujiwara, M. Ashida, H. Tanaka

    2014/02

  38. Colossal magnetoresistive (La,Pr,Ca)MnO3 nanobox array structures constructed by the three-dimensional nanotemplate pulsed laser deposition technique Peer-reviewed

    T. V. A. Nguyen, A. N. Hattori, Y. Fujiwara, S. Ueda, H. Tanaka

    APPLIED PHYSICS LETTERS　103　(22)　223105_1-223105_4　2013/11

    DOI： 10.1063/1.4834876 　

    ISSN： 0003-6951

    eISSN： 1077-3118

Show all ︎Show first 5

Misc. 9

  1. 電気磁気効果によるCo/Cr₂O₃界面の界面交換磁気異方性反転とダイナミクス (スピントロニクスにおける次世代材料開発)

    白土 優, Nguyen Thi Van Anh, 豊木 研太郎, 中谷 亮一

    社団法人日本磁気学会研究会資料 = Bulletin of Topical Symposium of the Magnetics Society of Japan　208　39-44　2016/06/09

    Publisher: 日本磁気学会

    ISSN： 1882-2940

  2. Preparation and some properties of ZnS and ZnS:Mn nanostructured materials Peer-reviewed

    T. V. A. Nguyen, N. M. Thuy, T. M. Thi, L. T, H. Hai, D. T. Sam

    Advances in Optics, Photonics, Spectroscopy & Applications VI (ISSN 1859 - 4271)　378-385　2010

  3. Preparation and some properties of ZnS and ZnS:Cu, Al materials

    T. V. A. Nguyen, N. M. Thuy, N. M. Nghia, D. T. Sam, N. T. Khoi

    The fifth National Conference on Solid State Physics　520-523　2007

  4. Magnetometer based on Hall effect – an effective instrument in studying the magnetic properties of thin film

    P. H. Quang, T. Q. Hung, T. V. A. Nguyen

    The sixth National Conference on Physics　2005

  5. Some properties of magnetic semiconductor Al1-xMnxN thin films

    P. H. Quang, T. V. A. Nguyen, T. Q. Hung

    The sixth National Conference on Physics　2005

  6. Enhanced performance of TCO transparent conductive electrode for photo – electronic devices

    P. V. Nho, P. A. Tuan, T. V. A. Nguyen, N. T. Hai, N. T, T. Hang, H. N. Thanh

    The ninth Vietnam Conference on radio and electronics (Rev’04)　239-242　2004

  7. The Use of Ag nanosized particles for increasing electrical conductivity of SnO2:F electrode

    P. A. Tuan, T. V. A. Nguyen, P. V. Nho, N. T, T. Hang

    The second International Workshop on Nanophysics and Nanotechnology (IWONN’04)　209-212　2004

  8. Preparation of Sn – doped In2O3 and its interfacial properties with nanocrystalline TiO2

    P. V. Nho, T. V. A. Nguyen, N. T. Hien, T. K. Cuong, D. T. Thu

    The seventh Vietnamese – German Seminar on Physics and Engineering　270-273　2004

  9. Studying the interface between nanocrystalline TiO2 and SnO2

    P. V. Nho, V. V. Thanh, N. Q. Tien, T. V. A. Nguyen

    The fourth National Conference on Solid State Physics　309-312　2003

Show all ︎Show first 5

Industrial Property Rights 1

  1. 薄膜構造体、磁気記憶素子、磁気記憶装置及び薄膜構造体の製造方法

    Yu Shiratsuchi, Nguyen Thi Van Anh, Ryoichi Nakatani

    Property Type: Patent

Teaching Experience 3

  1. Experimental in General Physics　Hanoi National University of Education, Vietnam

  2. General Physics: Atomic and Nuclear Physics　Hanoi National University of Education, Vietnam

  3. General Physics: Optics　Hanoi National University of Education, Vietnam