-
Effect of Interfacial Oxide Layers on Self-Doped PEDOT/Si Hybrid Solar Cells
International-journal
Peer-reviewed
Aditya Saha, Ryuji Oshima, Daisuke Ohori, Takahiko Sasaki, Hirokazu Yano, Hidenori Okuzaki, Takashi Tokumasu, Kazuhiko Endo, Seiji Samukawa
Energies 16 6900-1-6900-14 2023/09/30
DOI：
10.3390/en16196900
-
Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication
Daisuke Ohori, Takahiro Ishihara, Xuelun Wang, Kazuhiko Endo, Tsau-Hua Hsieh, Yiming Li, Nobuhiro Natori, Kazuma Matsui, Seiji Samukawa
Nanotechnology 2023/09/03
DOI：
10.1088/1361-6528/acd856
-
Defect generation and recovery in high-k HfO2/SiO2/Si stack fabrication
Peer-reviewed
Shota Nunomura, Hiroyuki Ota, Toshifumi Irisawa, Kazuhiko Endo, Yukinori Morita
Applied Physics Express 2023/06/01
DOI：
10.35848/1882-0786/acdc82
-
Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method
Peer-reviewed
Tomoki Harada, Daisuke Ohori, Kazuhiko Endo, Seiji Samukawa, Tetsuo Ikari, Atsuhiko Fukuyama
Journal of Applied Physics 133 (12) 2023/03/28
DOI：
10.1063/5.0146578
ISSN：
0021-8979
eISSN：
1089-7550
-
2023 IEEE Symposium on VLSI Technology and Circuits [Conference Reports]
Alvin Loke, Mitsuya Fukazawa, Kazuhiko Endo
IEEE Solid-State Circuits Magazine 2023
DOI：
10.1109/MSSC.2023.3315950
-
Room-temperature and high-quality HfO<inf>2</inf>/SiO<inf>2</inf>gate stacked film grown by neutral beam enhanced atomic layer deposition
Peer-reviewed
Beibei Ge, Daisuke Ohori, Yi Ho Chen, Takuya Ozaki, Kazuhiko Endo, Yiming Li, Jenn Hwan Tarng, Seiji Samukawa
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 40 (2) 2022/03/01
DOI：
10.1116/6.0001607
ISSN：
0734-2101
eISSN：
1520-8559
-
Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs
Peer-reviewed
Hiroshi Oka, Wataru Mizubayashi, Yuki Ishikawa, Noriyuki Uchida, Takahiro Mori, Kazuhiko Endo
Applied Physics Express 14 (9) 2021/09
DOI：
10.35848/1882-0786/ac1a47
ISSN：
1882-0778
eISSN：
1882-0786
-
Surface wettability of silicon nanopillar array structures fabricated by biotemplate ultimate top-down processes
Peer-reviewed
Sou Takeuchi, Daisuke Ohori, Masahiro Sota, Teruhisa Ishida, Yiming Li, Jenn Hwan Tarng, Kazuhiko Endo, Seiji Samukawa
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 39 (2) 2021/03/01
DOI：
10.1116/6.0000770
ISSN：
0734-2101
eISSN：
1520-8559
-
Non-equilibrium solid-phase growth of amorphous GeSn layer on Ge-on-insulator wafer induced by flash lamp annealing
Peer-reviewed
Hiroshi Oka, Wataru Mizubayashi, Yuki Ishikawa, Noriyuki Uchida, Takahiro Mori, Kazuhiko Endo
Applied Physics Express 14 (2) 2021/02
DOI：
10.35848/1882-0786/abdac4
ISSN：
1882-0778
eISSN：
1882-0786
-
Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials
Peer-reviewed
Daisuke Ohori, Min Hui Chuang, Asahi Sato, Sou Takeuchi, Masayuki Murata, Atsushi Yamamoto, Ming Yi Lee, Kazuhiko Endo, Yiming Li, Jenn Hwan Tarng, Yao Jen Lee, Seiji Samukawa
IEEE Open Journal of Nanotechnology 2 148-152 2021
Publisher:
Institute of Electrical and Electronics Engineers ({IEEE})
DOI：
10.1109/OJNANO.2021.3131165
eISSN：
2644-1292
-
High electron mobility germanium FinFET fabricated by atomic layer defect-free and roughness-free etching
Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao Jen Lee, Jenn Hwan Tarng, Yiming Li, Seiji Samukawa
IEEE Open Journal of Nanotechnology 2 26-30 2021
DOI：
10.1109/OJNANO.2021.3055150
eISSN：
2644-1292
-
High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: Towards directional micro-LED in top-down structure
Kexiong Zhang, Tokio Takahashi, Daisuke Ohori, Guangwei Cong, Kazuhiko Endo, Naoto Kumagai, Seiji Samukawa, Mitsuaki Shimizu, Xuelun Wang
Semiconductor Science and Technology 35 (7) 2020/07
DOI：
10.1088/1361-6641/ab8539
ISSN：
0268-1242
eISSN：
1361-6641
-
Analysis of charge-to-hot-carrier degradation in Ge pFinFETs
Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo
IEEE International Reliability Physics Symposium Proceedings 2020- 2020/04/01
Publisher:
Institute of Electrical and Electronics Engineers Inc.
DOI：
10.1109/IRPS45951.2020.9129279
ISSN：
1541-7026
-
Correction: Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability (IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (2013) 32:7 (1045-1058) DOI: 10.1109/TCAD.2013.2248194)
Chuan Xu, Seshadri K. Kolluri, Kazhuhiko Endo, Kaustav Banerjee
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 39 (1) 277-277 2020/01
Publisher:
Institute of Electrical and Electronics Engineers ({IEEE})
DOI：
10.1109/TCAD.2019.2944583
ISSN：
0278-0070
eISSN：
1937-4151
-
Performance improvement of Ge fin field-effect transistors by post-fin-fabrication annealing
Peer-reviewed
Wataru Mizubayashi, Hiroshi Oka, Takahiro Mori, Yuki Ishikawa, Seiji Samukawa, Kazuhiko Endo
Japanese Journal of Applied Physics 59 (SI) 2020
DOI：
10.35848/1347-4065/ab87f5
ISSN：
0021-4922
eISSN：
1347-4065
-
Highly water-repellent nanostructure on quartz surface based on cassie-baxter model with filling factor
Daisuke Ohori, Sou Takeuchi, Masahiro Sota, Teruhisa Ishida, Yiming Li, Jenn Hwan Tarng, Kazuhiko Endo, Seiji Samukawa
IEEE Open Journal of Nanotechnology 1 (1) 1-5 2020
Publisher:
Institute of Electrical and Electronics Engineers ({IEEE})
DOI：
10.1109/OJNANO.2020.2980629
eISSN：
2644-1292
-
Microwave Annealing Technologies for Variability Reduction of Nanodevices: A Review of Their Impact on FinFETs
Kazuhiko Endo, Yao Jen Lee
IEEE Nanotechnology Magazine 13 (6) 34-38 2019/12
Publisher:
Institute of Electrical and Electronics Engineers ({IEEE})
DOI：
10.1109/MNANO.2019.2941029
ISSN：
1932-4510
eISSN：
1942-7808
-
The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors
Kazuhiko Endo, Yasumitsu Miyata, Toshifumi Irisawa
IEEE Nanotechnology Magazine 13 (6) 39-42 2019/12
Publisher:
Institute of Electrical and Electronics Engineers ({IEEE})
DOI：
10.1109/MNANO.2019.2941030
ISSN：
1932-4510
eISSN：
1942-7808
-
Near-Complete Elimination of Size-Dependent Efficiency Decrease in GaN Micro-Light-Emitting Diodes
Peer-reviewed
Jun Zhu, Tokio Takahashi, Daisuke Ohori, Kazuhiko Endo, Seiji Samukawa, Mitsuaki Shimizu, Xue Lun Wang
Physica Status Solidi (A) Applications and Materials Science 216 (22) 2019/11/01
DOI：
10.1002/pssa.201900380
ISSN：
1862-6300
eISSN：
1862-6319
-
Atomic layer defect-free etching for germanium using HBr neutral beam
Takuya Fujii, Daisuke Ohori, Shuichi Noda, Yosuke Tanimoto, Daisuke Sato, Hideyuki Kurihara, Wataru Mizubayashi, Kazuhiko Endo, Yiming Li, Yao Jen Lee, Takuya Ozaki, Seiji Samukawa
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 37 (5) 2019/09/01
DOI：
10.1116/1.5100547
ISSN：
0734-2101
eISSN：
1520-8559
-
Quantification of Spin Drift in Devices with a Heavily Doped Si Channel
Peer-reviewed
A. Spiesser, Y. Fujita, H. Saito, S. Yamada, K. Hamaya, W. Mizubayashi, K. Endo, S. Yuasa, R. Jansen
Physical Review Applied 11 (4) 2019/04
DOI：
10.1103/PhysRevApplied.11.044020
eISSN：
2331-7019
-
Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam
Peer-reviewed
Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, En Tzu Lee, Yiming Li, Yao Jen Lee, Takuya Ozaki, Seiji Samukawa
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 37 (2) 2019/03/01
DOI：
10.1116/1.5079692
ISSN：
0734-2101
eISSN：
1520-8559
-
Characteristics of Carrier Mobility and Phonon Scattering by Controlling Spacing of Si Nanopillars in SiGe
Ohori Daisuke, Kuboyama Hidesato, Murata Masayuki, Yamamoto Atsushi, Nomura Masahiro, Endo Kazuhiko, Samukawa Seiji
JSAP Annual Meetings Extended Abstracts 2019.1 3716-3716 2019/02/25
Publisher:
The Japan Society of Applied Physics
DOI：
10.11470/jsapmeeting.2019.1.0_3716
eISSN：
2436-7613
-
Multidomain Dynamics of Ferroelectric Polarization and its Coherency-Breaking in Negative Capacitance Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi Hattori, Hidehiro Asai, Kazuhiko Endo, Shinji Migita, Akira Toriumi
Technical Digest - International Electron Devices Meeting, IEDM 2018- 9.1.1-9.1.4 2019/01/16
Publisher:
Institute of Electrical and Electronics Engineers Inc.
DOI：
10.1109/IEDM.2018.8614531
ISSN：
0163-1918
-
High efficiency 100-nm-sized InGaN/GaN active region fabricated by neutral-beam-etching and GaN regrowth for directional micro-LED
Kexiong Zhang, Tokio Takahashi, Daisuke Ohori, Guangwei Cong, Kazuhiko Endo, Naoto Kumagai, Seiji Samukawa, Mitsuaki Shimizu, Xuelun Wang
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019
-
Steep switching less than 15 mV dec-1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda
Japanese Journal of Applied Physics 58 (SB) 2019
DOI：
10.7567/1347-4065/ab01d5
ISSN：
0021-4922
eISSN：
1347-4065
-
Multidomain Dynamics of Ferroelectric Polarization and its Coherency-Breaking in Negative Capacitance Field-Effect Transistors
Peer-reviewed
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi Hattori, Hidehiro Asai, Kazuhiko Endo, Shinji Migita, Akira Toriumi
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2018/12
ISSN：
2380-9248
-
CVD growth technologies of layered MX<inf>2</inf> materials for real LSI applications - Position and growth direction control and gas source synthesis
T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W. H. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata
IEEE Journal of the Electron Devices Society 6 1159-1163 2018/09/17
DOI：
10.1109/JEDS.2018.2870893
eISSN：
2168-6734
-
Steep switching in trimmed-gate tunnel FET
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda
AIP Advances 8 (9) 2018/09/01
DOI：
10.1063/1.5043570
eISSN：
2158-3226
-
Position Control and Gas Source CVD Growth Technologies of 2D MX<inf>2</inf> Materials for Real LSI Applications
T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W. H. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 331-333 2018/07/26
DOI：
10.1109/EDTM.2018.8421437
-
Simulation study of short-channel effects of tunnel field-effect transistors
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Takahiro Mori, Yukinori Morita, Wataru Mizubayashi, Meishoku Masahara, Shinji Migita, Hiroyuki Ota, Kazuhiro Endo, Takashi Matsukawa
Japanese Journal of Applied Physics 57 (4) 2018/04
DOI：
10.7567/JJAP.57.04FD04
ISSN：
0021-4922
eISSN：
1347-4065
-
Enhancement of capacitance benefit by drain offset structure in tunnel field-effect transistor circuit speed associated with tunneling probability increase
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda
Japanese Journal of Applied Physics 57 (4) 2018/04
DOI：
10.7567/JJAP.57.04FD13
ISSN：
0021-4922
eISSN：
1347-4065
-
Short Channel Modeling of Tunnel FET's
Peer-reviewed
K. Fukuda, H. Asai, J. Hattori, T. Mori, Y. Morita, W. Mizubayashi, M. Masahara, S. Migita, H. Ota, K. Endo, T. Matsukawa
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials 2017/09/21
Publisher:
The Japan Society of Applied Physics
DOI：
10.7567/ssdm.2017.ps-3-05
-
Enhancement of Capacitance Benefit by Drain Offset Structure in TFET Circuit Speed Associated with Tunneling Probability Increase
Peer-reviewed
H. Asai, T. Mori, T. Matsukawa, J. Hattori, K. Endo, K. Fukuda
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials 2017/09/21
Publisher:
The Japan Society of Applied Physics
DOI：
10.7567/ssdm.2017.ps-3-06
-
Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application
Yukinori Morita, Koichi Fukuda, Yongxun Liu, Takahiro Mori, Wataru Mizubayashi, Shin Ichi O'Uchi, Hiroshi Fuketa, Shintaro Otsuka, Shinji Migita, Meishoku Masahara, Kazuhiko Endo, Hiroyuki Ota, Takashi Matsukawa
Japanese Journal of Applied Physics 56 (4) 2017/04
DOI：
10.7567/JJAP.56.04CD19
ISSN：
0021-4922
eISSN：
1347-4065
-
Bias temperature instability in tunnel field-effect transistors
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo
Japanese Journal of Applied Physics 56 (4) 2017/04
DOI：
10.7567/JJAP.56.04CA04
ISSN：
0021-4922
eISSN：
1347-4065
-
On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors
Koichi Fukuda, Takahiro Mori, Hidehiro Asai, Junichi Hattori, Wataru Mizubayashi, Yukinori Morita, Hiroshi Fuketa, Shinji Migita, Hiroyuki Ota, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa
Japanese Journal of Applied Physics 56 (4) 2017/04
DOI：
10.7567/JJAP.56.04CD04
ISSN：
0021-4922
eISSN：
1347-4065
-
Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors
Wataru Mizubayashi, Shuichi Noda, Yuki Ishikawa, Takashi Nishi, Akio Kikuchi, Hiroyuki Ota, Ping Hsun Su, Yiming Li, Seiji Samukawa, Kazuhiko Endo
Applied Physics Express 10 (2) 2017/02
DOI：
10.7567/APEX.10.026501
ISSN：
1882-0778
eISSN：
1882-0786
-
On the Drain Bias Dependence of Tunnel FETs
Peer-reviewed
K. Fukuda, T. Mori, H. Asai, J. Hattori, W. Mizubayashi, Y. Morita, H. Fuketa, S. Migita, H. Ota, M. Masahara, K. Endo, T. Matsukawa
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials 2016/09/28
Publisher:
The Japan Society of Applied Physics
DOI：
10.7567/ssdm.2016.a-3-03
-
Tunnel FinFET CMOS Inverter with Very Low Short-Circuit Current for Ultra-Low Power IoT Application
Peer-reviewed
Yukinori Morita, Koichi Fukuda, Yongxun Liu, Takahiro Mori, Wataru Mizubayashi, Shin-ichi O'uchi, Hiroshi Fuketa, Shintaro Otsuka, Shinji Migita, Meishoku Masahara, Kazuhiko Endo, Hiroyuki Ota, Takashi Matsukawa
International Conference on Solid State Devices and Materials (SSDM) 49-50 2016/09
DOI：
10.7567/SSDM.2016.A-6-03
-
Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET
Yukinori Morita, Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Shinji Migita, Kazuhiko Endo, Shin Ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Takashi Matsukawa, Hiroyuki Ota
Japanese Journal of Applied Physics 55 (4) 2016/04
DOI：
10.7567/JJAP.55.04EB06
ISSN：
0021-4922
eISSN：
1347-4065
-
Silicon nanodisk array with afinfield-effect transistor for time-domain weighted sum calculation toward massively parallel spiking neural networks
Takashi Tohara, Haichao Liang, Hirofumi Tanaka, Makoto Igarashi, Seiji Samukawa, Kazuhiko Endo, Yasuo Takahashi, Takashi Morie
Applied Physics Express 9 (3) 2016/03
DOI：
10.7567/APEX.9.034201
ISSN：
1882-0778
eISSN：
1882-0786
-
Floating gate type SOI-FinFET flash memories with different channel shapes and interpoly dielectric materials
Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara
ECS Transactions 72 (2) 11-24 2016
DOI：
10.1149/07202.0011ecst
ISSN：
1938-6737
eISSN：
1938-5862
-
Highly V<inf>t</inf> tunable and low variability triangular fin-channel MOSFETs on SOTB
Y. X. Liu, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, M. Masahara
Microelectronic Engineering 147 290-293 2015/11/01
DOI：
10.1016/j.mee.2015.04.075
ISSN：
0167-9317
-
Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors
W. Mizubayashi, K. Fukuda, T. Mori, K. Endo, Y. X. Liu, T. Matsukawa, S. O'Uchi, Y. Ishikawa, S. Migita, Y. Morita, A. Tanabe, J. Tsukada, H. Yamauchi, M. Masahara, H. Ota
Solid-State Electronics 111 62-66 2015/09/01
DOI：
10.1016/j.sse.2015.04.011
ISSN：
0038-1101
-
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin Ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
Solid-State Electronics 113 173-178 2015/07/20
DOI：
10.1016/j.sse.2015.05.031
ISSN：
0038-1101
-
Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories
Yongxun Liu, Toshihide Nabatame, Num Nguyen, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara
Japanese Journal of Applied Physics 54 (4) 2015/04
DOI：
10.7567/JJAP.54.04DD04
ISSN：
0021-4922
eISSN：
1347-4065
-
Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors
Wataru Mizubayashi, Hiroshi Onoda, Yoshiki Nakashima, Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara
Japanese Journal of Applied Physics 54 (4) 2015/04
DOI：
10.7567/JJAP.54.04DA06
ISSN：
0021-4922
eISSN：
1347-4065
-
Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors
Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Kazuhiko Endo, Yuki Ishikawa, Shin Ichi O'uchi, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Hiroyuki Ota, Meishoku Masahara
Applied Physics Express 8 (4) 2015/04
DOI：
10.7567/APEX.8.044201
ISSN：
1882-0778
eISSN：
1882-0786
-
0.8-V Rail-to-Rail Operational Amplifier with Near-Vt Gain-Boosting Stage Fabricated in FinFET Technology for IoT Sensor Nodes
O'Uchi, S., Liu, Y. X., Nakagawa, T., Mizubayashi, W., Migita, S., Morita, N., Ota, H., Ishikawa, Y., Tsukada, J., Koike, H., Masahara, M., Endo, K., Matsukawa, T., Ieee,
2015
-
0.8-V Rail-to-Rail Operational Amplifier with Near-Vt Gain-Boosting Stage Fabricated in FinFET Technology for IoT Sensor Nodes
O'Uchi, S., Liu, Y. X., Nakagawa, T., Mizubayashi, W., Migita, S., Morita, N., Ota, H., Ishikawa, Y., Tsukada, J., Koike, H., Masahara, M., Endo, K., Matsukawa, T., Ieee,
2015
-
Variability in FinFET SRAM cells
K. Endo, S. O'Uchi, T. Matsukawa, Y. Liu, M. Masahara
ECS Transactions 69 (5) 141-147 2015
DOI：
10.1149/06905.0141ecst
ISSN：
1938-6737
eISSN：
1938-5862
-
Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin Ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
Solid-State Electronics 102 82-86 2014/12
DOI：
10.1016/j.sse.2014.06.007
ISSN：
0038-1101
-
Performance enhancement of tunnel field-effect transistors by synthetic electric field effect
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Yong Xun Liu, Meishoku Masahara, Hiroyuki Ota
IEEE Electron Device Letters 35 (7) 792-794 2014/07
DOI：
10.1109/LED.2014.2323337
ISSN：
0741-3106
-
Comparative study of charge trapping type SOI-FinFET flash memories with different blocking layer materials
Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara
Journal of Low Power Electronics and Applications 4 (2) 153-167 2014/06/20
DOI：
10.3390/jlpea4020153
eISSN：
2079-9268
-
Analysis of threshold voltage flexibility in ultrathin-BOX SOI FinFETs
Kazuhiko Endo, Shinji Migita, Yuki Ishikawa, Takashi Matsukawa, Shin Ichi O'uchi, Junji Tsukada, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Hitomi Yamauchi, Meishoku Masahara
Journal of Low Power Electronics and Applications 4 (2) 110-118 2014/05/23
DOI：
10.3390/jlpea4020110
eISSN：
2079-9268
-
Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels
Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Shinichi O'uchi, Wataru Mizubayashi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Meishoku Masahara
Japanese Journal of Applied Physics 53 (4 SPEC. ISSUE) 2014/04
DOI：
10.7567/JJAP.53.04EC11
ISSN：
0021-4922
eISSN：
1347-4065
-
Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates
Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara
Japanese Journal of Applied Physics 53 (4 SPEC. ISSUE) 2014/04
DOI：
10.7567/JJAP.53.04ED16
ISSN：
0021-4922
eISSN：
1347-4065
-
Fabrication and Characterization of 3D Fin-Channel MANOS Type Flash Memory
Peer-reviewed
Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara
2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 2014
DOI：
10.1109/SNW.2014.7348559
ISSN：
2161-4636
-
Experimental Study of Charge Trapping Type FinFET Flash Memory
Peer-reviewed
Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Sinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2014
DOI：
10.1109/INEC.2014.7460429
ISSN：
2159-3523
-
Accurate Prediction of PBTI Lifetime for N-type Fin-Channel Tunnel FETs
Peer-reviewed
W. Mizubayashi, T. Mori, K. Fukuda, Y. X. Liu, T. Matsukawa, Y. Ishikawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Morita, S. Migita, H. Ota, M. Masahara
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2014
-
Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology
Matsukawa, T., Fukuda, K., Liu, Y. X., Tsukada, J., Yamauchi, H., Ishikawa, Y., Endo, K., O'Uchi, S., Migita, S., Mizubayashi, W., Morita, Y., Ota, H., Masahara, M., Ieee,
2014
-
Lowest Variability SOI FinFETs Having Multiple V-t by Back-Biasing
Matsukawa, T., Fukuda, K., Liu, Y. X., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., O'Uchi, S., Mizubayashi, W., Migita, S., Orita, Y. M., Ota, H., Masahara, M., Ieee,
2014
-
Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology
Matsukawa, T., Fukuda, K., Liu, Y. X., Tsukada, J., Yamauchi, H., Ishikawa, Y., Endo, K., O'Uchi, S., Migita, S., Mizubayashi, W., Morita, Y., Ota, H., Masahara, M., Ieee,
2014
-
Lowest Variability SOI FinFETs Having Multiple V-t by Back-Biasing
Matsukawa, T., Fukuda, K., Liu, Y. X., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., O'Uchi, S., Mizubayashi, W., Migita, S., Orita, Y. M., Ota, H., Masahara, M., Ieee,
2014
-
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of less than 60 mV/decade and Very Low (pA/mu m) Off-Current on a Si CMOS Platform
Morita, Y., Mori, T., Fukuda, K., Mizubayashi, W., Migita, S., Matsukawa, T., Endo, K., O'Uchi, S., Liu, Y., Masahara, M., Ota, H., Ieee,
2014
-
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of less than 60 mV/decade and Very Low (pA/mu m) Off-Current on a Si CMOS Platform
Morita, Y., Mori, T., Fukuda, K., Mizubayashi, W., Migita, S., Matsukawa, T., Endo, K., O'Uchi, S., Liu, Y., Masahara, M., Ota, H., Ieee,
2014
-
Charge trapping type SOI-FinFET flash memory
Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara
ECS Transactions 61 (2) 263-280 2014
DOI：
10.1149/06102.0263ecst
ISSN：
1938-5862
eISSN：
1938-6737
-
Atomic layer deposition of SiO<inf>2</inf> for the performance enhancement of fin field effect transistors
Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxun Liu, Shin Ichi O'Uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara
Japanese Journal of Applied Physics 52 (11 PART 1) 2013/11
DOI：
10.7567/JJAP.52.116503
ISSN：
0021-4922
eISSN：
1347-4065
-
Gate structure dependence of variability in polycrystalline silicon fin-channel flash memories
Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 52 (6 PART 2) 2013/06
DOI：
10.7567/JJAP.52.06GE01
ISSN：
0021-4922
eISSN：
1347-4065
-
Independent-double-gate FinFET SRAM technology
Kazuhiko Endo, Shin Ichi Ouchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara
IEICE Transactions on Electronics E96-C (4) 413-423 2013/04
DOI：
10.1587/transele.E96.C.413
ISSN：
0916-8524
eISSN：
1745-1353
-
1=f noise characteristics of fin-type field-effect transistors in saturation region
Hideo Sakai, Shin Ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Meishoku Masahara, Hiroki Ishikuro
Japanese Journal of Applied Physics 52 (4 PART 2) 2013/04
DOI：
10.7567/JJAP.52.04CC23
ISSN：
0021-4922
eISSN：
1347-4065
-
Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function
T. Matsukawa, Y. X. Liu, W. Mizubayashi, J. Tsukada, H. Yamauchi, K. Endo, Y. Ishikawa, S. Ouchi, H. Ota, S. Migita, Y. Morita, M. Masahara
Applied Physics Letters 102 (16) 2013/04
DOI：
10.1063/1.4803040
ISSN：
0003-6951
-
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs
Mizubayashi, W., Onoda, H., Nakashima, Y., Ishikawa, Y., Matsukawa, T., Endo, K., Liu, Y. X., O'Uchi, S., Tsukada, J., Yamauchi, H., Migita, S., Morita, Y., Ota, H., Masahara, M., Ieee,
2013
-
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs
Mizubayashi, W., Onoda, H., Nakashima, Y., Ishikawa, Y., Matsukawa, T., Endo, K., Liu, Y. X., O'Uchi, S., Tsukada, J., Yamauchi, H., Migita, S., Morita, Y., Ota, H., Masahara, M., Ieee,
2013
-
Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability
Chuan Xu, Seshadri K. Kolluri, Kazhuhiko Endo, Kaustav Banerjee
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 32 (7) 1045-1058 2013
DOI：
10.1109/TCAD.2013.2248194
ISSN：
0278-0070
-
Independent-double-gate FinFET SRAM technology
K. Endo, S. O'Uchi, T. Matsukawa, Y. Liu, M. Masahara
ECS Transactions 50 (4) 193-199 2013
DOI：
10.1149/05004.0193ecst
ISSN：
1938-5862
eISSN：
1938-6737
-
Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition
Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxum Liu, Shin Ichi O'Uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara
Solid-State Electronics 74 13-18 2012/08
DOI：
10.1016/j.sse.2012.04.005
ISSN：
0038-1101
-
Experimental study of floating-gate-type metal-oxide-semiconductor capacitors with nanosize triangular cross-sectional tunnel areas for low operating voltage flash memory application
Yongxun Liu, Ruofeng Guo, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 51 (6 PART 2) 2012/06
DOI：
10.1143/JJAP.51.06FF01
ISSN：
0021-4922
eISSN：
1347-4065
-
Fabrication and characterization of NOR-type tri-gate flash memory with improved inter-poly dielectric layer by rapid thermal oxidation
Takahiro Kamei, Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 51 (6 PART 2) 2012/06
DOI：
10.1143/JJAP.51.06FE19
ISSN：
0021-4922
eISSN：
1347-4065
-
A correlative analysis between characteristics of FinFETs and SRAM performance
Kazuhiko Endo, Shinichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara
IEEE Transactions on Electron Devices 59 (5) 1345-1352 2012/05
DOI：
10.1109/TED.2012.2188633
ISSN：
0018-9383
-
High-frequency precise characterization of intrinsic FinFET channel
Hideo Sakai, Shinichi O'uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro
IEICE Transactions on Electronics E95-C (4) 752-760 2012/04
DOI：
10.1587/transele.E95.C.752
ISSN：
0916-8524
eISSN：
1745-1353
-
A 0.7-V opamp in scaled low-standby-power FinFET technology
Shin Ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara
IEICE Transactions on Electronics E95-C (4) 686-695 2012/04
DOI：
10.1587/transele.E95.C.686
ISSN：
0916-8524
eISSN：
1745-1353
-
Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors
Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Shin Ichi O'Uchi, Takashi Matsukawa, Yusuke Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Hiroki Hashiguchi, Daisuke Kosemura, Takahiro Kamei, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 51 (4 PART 2) 2012/04
DOI：
10.1143/JJAP.51.04DA05
ISSN：
0021-4922
eISSN：
1347-4065
-
Fabrication of floating-gate-type fin-channel double-and tri-gate flash memories and comparative study of their electrical characteristics
Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 51 (4 PART 2) 2012/04
DOI：
10.1143/JJAP.51.04DD03
ISSN：
0021-4922
eISSN：
1347-4065
-
Variability origins of parasitic resistance in finFETs with silicided source/drain
Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Shinichi O'Uchi, Kunihiro Sakamoto, Meishoku Masahara
IEEE Electron Device Letters 33 (4) 474-476 2012/04
DOI：
10.1109/LED.2012.2182755
ISSN：
0741-3106
-
Demonstration of split-gate type trigate flash memory with highly suppressed over-erase
Takahiro Kamei, Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
IEEE Electron Device Letters 33 (3) 345-347 2012/03
DOI：
10.1109/LED.2011.2181322
ISSN：
0741-3106
-
Variability analysis of scaled crystal channel and poly-Si channel FinFETs
Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
IEEE Transactions on Electron Devices 59 (3) 573-581 2012/03
DOI：
10.1109/TED.2011.2178850
ISSN：
0018-9383
-
Fin-height effect on poly-Si/PVD-TiN stacked-gate FinFET performance
Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Shin Ichi O'Uchi, Takashi Matsukawa, Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Hiroki Hashiguchi, Daisuke Kosemura, Takahiro Kamei, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara
IEEE Transactions on Electron Devices 59 (3) 647-653 2012/03
DOI：
10.1109/TED.2011.2181385
ISSN：
0018-9383
-
Suppressing V-t and G(m) Variability of FinFETs Using Amorphous Metal Gates for 14 nm and Beyond
Matsukawa, T., Liu, Y. X., Mizubayashi, W., Tsukada, J., Yamauchi, H., Endo, K., Ishikawa, Y., O'Uchi, S., Ota, H., Migita, S., Morita, Y., Masahara, M., Ieee,
2012
-
Suppressing V-t and G(m) Variability of FinFETs Using Amorphous Metal Gates for 14 nm and Beyond
Matsukawa, T., Liu, Y. X., Mizubayashi, W., Tsukada, J., Yamauchi, H., Endo, K., Ishikawa, Y., O'Uchi, S., Ota, H., Migita, S., Morita, Y., Masahara, M., Ieee,
2012
-
On-current variability sources of FinFETs: Analysis and perspective for 14nm-Lg technology
T. Matsukawa, Y. X. Liu, K. Endo, S. O'Uchi, M. Masahara
ECS Transactions 45 (6) 231-242 2012
DOI：
10.1149/1.3700958
ISSN：
1938-5862
eISSN：
1938-6737
-
FinFET flash memory technology
Y. X. Liu, T. Kamei, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura, M. Masahara
ECS Transactions 45 (3) 289-310 2012
DOI：
10.1149/1.3700894
ISSN：
1938-5862
eISSN：
1938-6737
-
Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm
Takashi Matsukawa, Yongxun Liu, Shin Ichi O'Uchi, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Kunihiro Sakamoto, Meishoku Masahara
IEEE Transactions on Electron Devices 59 (8) 2003-2010 2012
DOI：
10.1109/TED.2012.2196766
ISSN：
0018-9383
-
Static noise margin enhancement by flex-pass-gate SRAM
Shin Ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yungxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki
Electronics and Communications in Japan 94 (8) 57-64 2011/08
DOI：
10.1002/ecj.10217
ISSN：
1942-9533
eISSN：
1942-9541
-
Grain-orientation induced quantum confinement variation in FinFETs and multi-gate ultra-thin body CMOS devices and implications for digital design
Seid Hadi Rasouli, Kazuhiko Endo, Jone F. Chen, Navab Singh, Kaustav Banerjee
IEEE Transactions on Electron Devices 58 (8) 2282-2292 2011/08
DOI：
10.1109/TED.2011.2151196
ISSN：
0018-9383
-
Low activation energy, high-quality oxidation of Si and Ge using neutral beam
Akira Wada, Kazuhiko Endo, Meishoku Masahara, Chi Hsien Huang, Seiji Samukawa
Applied Physics Letters 98 (20) 2011/05/16
DOI：
10.1063/1.3592576
ISSN：
0003-6951
eISSN：
1077-3118
-
Experimental study of physical-vapor-deposited titanium nitride gate with an n+-polycrystalline silicon capping layer and its application to 20nm fin-type double-gate metal-oxide-semiconductor field-effect transistors
Takahiro Kamei, Yongxun Liu, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Takashi Matsukawa, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 50 (4 PART 2) 2011/04
DOI：
10.1143/JJAP.50.04DC14
ISSN：
0021-4922
eISSN：
1347-4065
-
HiSIM-DG for Extracting Statistical Variations of Measured I-V Characteristics
Shintaku, Y., Ichimiya, H., Miura-Mattausch, M., Endo, K., O'Uchi, S., Masahara, M.
2011
-
HiSIM-DG for Extracting Statistical Variations of Measured I-V Characteristics
Shintaku, Y., Ichimiya, H., Miura-Mattausch, M., Endo, K., O'Uchi, S., Masahara, M.
2011
-
Rigorous design of 22-nm node 4-terminal SOI FinFETs for reliable low standby power operation with semi-empirical parameters
Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara, James S. Harris, Byung Gook Park
Journal of Semiconductor Technology and Science 10 (4) 265-275 2010/12
DOI：
10.5573/JSTS.2010.10.4.265
ISSN：
1598-1657
-
Design optimization of FinFET domino logic considering the width quantization property
Seid Hadi Rasouli, Hamed F. Dadgour, Kazuhiko Endo, Hanpei Koike, Kaustav Banerjee
IEEE Transactions on Electron Devices 57 (11) 2934-2943 2010/11
DOI：
10.1109/TED.2010.2076374
ISSN：
0018-9383
-
Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)
Seongjae Cho, Jung Hoon Lee, Shinichi O'Uchi, Kazuhiko Endo, Meishoku Masahara, Byung Gook Park
Solid-State Electronics 54 (10) 1060-1065 2010/10
DOI：
10.1016/j.sse.2010.05.013
ISSN：
0038-1101
-
Grain-orientation induced work function variation in nanoscale metal-gate transistors - Part I: Modeling, analysis, and experimental validation
Hamed F. Dadgour, Kazuhiko Endo, Vivek K. De, Kaustav Banerjee
IEEE Transactions on Electron Devices 57 (10) 2504-2514 2010/10
DOI：
10.1109/TED.2010.2063191
ISSN：
0018-9383
-
Grain-orientation induced work function variation in nanoscale metal-gate transistors - Part II: Implications for process, device, and circuit design
Hamed F. Dadgour, Kazuhiko Endo, Vivek K. De, Kaustav Banerjee
IEEE Transactions on Electron Devices 57 (10) 2515-2525 2010/10
DOI：
10.1109/TED.2010.2063270
ISSN：
0018-9383
-
Variability analysis of TiN FinFET SRAM cells and its compensation by independent-DG FinFETs
Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara
IEEE Electron Device Letters 31 (10) 1095-1097 2010/10
DOI：
10.1109/LED.2010.2062483
ISSN：
0741-3106
-
Fabrication of four-terminal fin field-effect transistors with asymmetric gate-oxide thickness using an anisotropic oxidation process with a neutral beam
Akira Wada, Kazuhiko Endo, Meishoku Masahara, Chi Hsien Huang, Seiji Samukawa
Applied Physics Express 3 (9) 2010/09
DOI：
10.1143/APEX.3.096502
ISSN：
1882-0778
eISSN：
1882-0786
-
Variability analysis of TiN metal-gate FinFETs
Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara
IEEE Electron Device Letters 31 (6) 546-548 2010/06
DOI：
10.1109/LED.2010.2047091
ISSN：
0741-3106
-
Nanoscale wet etching of physical-vapor-deposited titanium nitride and its application to sub-30-nm-gate-length fin-type double-gate metal-oxide- semiconductor field-effect transistor fabrication
Yongxun Liu, Takahiro Kamei, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Tetsuro Hayashida, Yuki Ishikawa, Takashi Matsukawa, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 49 (6 PART 2) 2010/06
DOI：
10.1143/JJAP.49.06GH18
ISSN：
0021-4922
eISSN：
1347-4065
-
High-performance three-terminal fin field-effect transistors fabricated by a combination of damage-free neutral-beam etching and neutral-beam oxidation
Akira Wada, Keisuke Sano, Masahiro Yonemoto, Kazuhiko Endo, Takashi Matsukawa, Meishoku Masahara, Satoshi Yamasaki, Seiji Samukawa
Japanese Journal of Applied Physics 49 (4 PART 2) 2010/04
DOI：
10.1143/JJAP.49.04DC17
ISSN：
0021-4922
eISSN：
1347-4065
-
Investigation of low-energy tilted ion implantation for fin-type double-gate metal-oxide-semiconductor field-effect transistor extension doping
Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinich O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Meishoku Masahara
Japanese Journal of Applied Physics 49 (4 PART 2) 2010/04
DOI：
10.1143/JJAP.49.04DC18
ISSN：
0021-4922
eISSN：
1347-4065
-
Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor
Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Shin Ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 49 (4 PART 2) 2010/04
DOI：
10.1143/JJAP.49.04DA16
ISSN：
0021-4922
eISSN：
1347-4065
-
Minimization of gate-induced drain leakage by controlling gate underlap length for low-standby-power operation of 20-nm-level four-terminal silicon-on-insulator fin-shaped field effect transistor
Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Yongxun Liu, Byung Gook Park, Meishoku Masahara
Japanese Journal of Applied Physics 49 (2 Part 1) 2010/02
DOI：
10.1143/JJAP.49.024203
ISSN：
0021-4922
eISSN：
1347-4065
-
On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs
Liu, Y. X., Endo, K., O'Uchi, S., Kamei, T., Tsukada, J., Yamauchi, H., Ishikawa, Y., Hayashida, T., Sakamoto, K., Matsukawa, T., Ogura, A., Masahara, M., Ieee,
2010
DOI：
10.1109/vlsit.2010.5556187
-
Advanced FinFET technologies: Extension doping, V<inf>th</inf> controllable CMOS inverters and SRAM
Y. X. Liu, K. Endo, S. O'uchi, T. Matsukawa, K. Sakamoto, M. Masahara
ECS Transactions 28 (2) 385-401 2010
DOI：
10.1149/1.3372593
ISSN：
1938-5862
eISSN：
1938-6737
-
Dual metal gate FinFET integration by Ta/Mo diffusion technology for V<inf>t</inf> reduction and multi-V<inf>t</inf> CMOS application
Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O'uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara
Solid-State Electronics 53 (7) 701-705 2009/07
DOI：
10.1016/j.sse.2009.02.013
ISSN：
0038-1101
-
Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): Technological challenges and future developments
Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki
IEEJ Transactions on Electrical and Electronic Engineering 4 (3) 386-391 2009/05
DOI：
10.1002/tee.20422
ISSN：
1931-4973
eISSN：
1931-4981
-
Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates
Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki
Applied Physics Express 2 (5) 2009/05
DOI：
10.1143/APEX.2.054502
ISSN：
1882-0778
eISSN：
1882-0786
-
A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors
Tetsuro Hayashida, Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinich O'Uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Eiichi Suzuki, Atsushi Ogura, Meishoku Masahara
Japanese Journal of Applied Physics 48 (5 PART 2) 2009/05
DOI：
10.1143/JJAP.48.05DC01
ISSN：
0021-4922
eISSN：
1347-4065
-
Low temperature, beam-orientation-dependent, lattice-plane-independent, and damage-free oxidation for three-dimensional structure by neutral beam oxidation
Masahiro Yonemoto, Toru Ikoma, Keisuke Sano, Kazuhiko Endo, Takashi Matsukawa, Meishoku Masahara, Seiji Samukawa
Japanese Journal of Applied Physics 48 (4 PART 2) 2009/04
DOI：
10.1143/JJAP.48.04C007
ISSN：
0021-4922
eISSN：
1347-4065
-
Comprehensive Analysis of Variability Sources of FinFET Characteristics
Matsukawa, T., O'Uchi, S., Endo, K., Ishikawa, Y., Yamauchi, H., Liu, Y. X., Tsukada, J., Sakamoto, K., Masahara, M., Jsap,
2009
DOI：
10.1109/iwsda.2009.5346407
-
Highly reliable SRAM circuit technology using FinFETs
Shin Ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Kunihiro Sakamoto, Meishoku Masahara
ECS Transactions 19 (4) 273-282 2009
DOI：
10.1149/1.3117418
ISSN：
1938-5862
eISSN：
1938-6737
-
Fluctuation analysis of parasitic resistance in FinFETs with scaled fin thickness
Takashi Matsukawa, Kazuhiko Endo, Yuki Ishikawa, Hiromi Yamauchi, Shinichi O'uchi, Yongxun Liu, Junichi Tsukada, Kenichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara
IEEE Electron Device Letters 30 (4) 407-409 2009
DOI：
10.1109/LED.2009.2014180
ISSN：
0741-3106
-
Metal-gate FinFET variation analysis by measurement and compact model
Shin Ichi O'uchi, Takashi Matsukawa, Tadashi Nakagawa, Kazuhiko Endo, Yongxun Liu, Toshihiro Sekigawa, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Kenichi Ishii, Eiichi Suzuki, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara
IEEE Electron Device Letters 30 (5) 556-558 2009
DOI：
10.1109/LED.2009.2016769
ISSN：
0741-3106
-
Independent-double-gate FinFET SRAM for leakage current reduction
Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Meishoku Masahara, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki
IEEE Electron Device Letters 30 (7) 757-759 2009
DOI：
10.1109/LED.2009.2021075
ISSN：
0741-3106
-
Reduction of moisture in semiconductor dry process equipment by generating extremely low oxygen ambience
Kazuhiko Endo, Naoki Shirakawa, Yoshiyuki Yoshida, Takeshi Iwase, Tetsuya Mino
Japanese Journal of Applied Physics 48 (8 Part 2) 2009
DOI：
10.1143/JJAP.48.08HH01
ISSN：
0021-4922
eISSN：
1347-4065
-
Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology
Shin ichi O'uchi, Kazuhiko Endo, Meishoku Masahara, Kunihiro Sakamoto, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki
Solid-State Electronics 52 (11) 1694-1702 2008/11
DOI：
10.1016/j.sse.2008.06.025
ISSN：
0038-1101
-
A Ta/Mo interdiffusion dual metal gate technology for drivability enhancement of FinFETs
Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O'uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Meishoku Masahara, Kunihiro Sakamoto, Eiichi Suzuki
IEEE Electron Device Letters 29 (6) 618-620 2008/06
DOI：
10.1109/LED.2008.922965
ISSN：
0741-3106
-
FinFET-based flex-Vth SRAM design for drastic standby-leakage-current reduction
Shin Ichi O'uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpel Koike, Eiichi Suzuki
IEICE Transactions on Electronics E91-C (4) 534-542 2008/04
DOI：
10.1093/ietele/e91-c.4.534
ISSN：
0916-8524
eISSN：
1745-1353
-
Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates
Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Meishoku Masahara, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishh, Eiichi Suzuki
Japanese Journal of Applied Physics 47 (4 PART 2) 2428-2432 2008/04
DOI：
10.1143/JJAP.47.2428
ISSN：
0021-4922
eISSN：
1347-4065
-
Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics
Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shinich O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Eiichi Suzuki
Japanese Journal of Applied Physics 47 (4 PART 2) 2433-2437 2008/04
DOI：
10.1143/JJAP.47.2433
ISSN：
0021-4922
eISSN：
1347-4065
-
Dual Metal Gate FinFET Integration by Ta/Mo Diffusion Technology for Vt Reduction and Multi-Vt CMOS Application
Peer-reviewed
Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'uchi, Melshoku Masahara, Yuki Ishikawa, Hiromi Yamauchl, Junichl Tsukada, Ken-ichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki
ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 282-285 2008
DOI：
10.1109/ESSDERC.2008.4681753
10.1109/essderc.2008.4681753
ISSN：
1930-8876
-
Variable-threshold-voltage FinFETs with a control-voltage range within the logic-level swing using asymmetric work-function double gates
O'Uchi, S., Sakamoto, K., Endo, K., Masahara, M., Matsukawa, T., Liu, Y. X., Hioki, M., Nakagawa, T., Sekigawa, T., Koike, H., Suzuki, E., Ieee,
2008
DOI：
10.1109/vtsa.2008.4530778
-
Enhancing SRAM Cell Performance by Using Independent Double-Gate FinFET
Endo, K., O'Uchi, S., Ishikawa, Y., Liu, Y. X., Matsukawa, T., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E., Masahara, M., Ieee,
2008
-
Characterization of Metal-Gate FinFET Variability Based on Measurements and Compact Model Analyses
O'Uchi, S., Matsukawa, T., Nakagawa, T., Endo, K., Liu, Y. X., Sekigawa, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ishii, K., Suzuki, E., Koike, H., Sakamoto, K., Masahara, M., Ieee,
2008
-
Vertical double-gate mosfet device technology
Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki
Electronics and Communications in Japan 91 (1) 46-51 2008/01
DOI：
10.1002/ecj.10021
ISSN：
1942-9533
-
Static noise margin enhancement by flex-pass-gate SRAM
Shin Ichi O'uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yungxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki
IEEJ Transactions on Electronics, Information and Systems 128 (6) 2008
DOI：
10.1541/ieejeiss.128.919
ISSN：
0385-4221
eISSN：
1348-8155
-
Threshold-voltage reduction of FinFETs by Ta/Mo interdiffusion dual metal-gate technology for low-operating-power application
Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O'uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Meishoku Masahara, Kunihiro Sakamoto, Eiichi Suzuki
IEEE Transactions on Electron Devices 55 (9) 2454-2461 2008
DOI：
10.1109/TED.2008.927648
ISSN：
0018-9383
-
Advanced metal gate FinFET CMOS technology
Y. X. Liu, T. Matsukawa, K. Endo, M. Masahara, S. O'uchi, K. Ishii, K. Sakamoto, E. Suzuki
ECS Transactions 13 (2) 239-252 2008
DOI：
10.1149/1.2908637
ISSN：
1938-5862
eISSN：
1938-6737
-
Experimental evaluation of effects of channel doping on characteristics of FinFETs
Kazuhiko Endo, Yuki Ishikawa, Yongxum Liu, Meishoku Masahara, Takashi Matsukawa, Shin Ichi O'uchi, Kenichi Ishii, Hiromi Yamauchi, Juniichi Tsukada, Eiichi Suzuki
IEEE Electron Device Letters 28 (12) 1123-1125 2007/12
DOI：
10.1109/LED.2007.909841
ISSN：
0741-3106
-
Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility
Y. X. Liu, T. Matsukawa, K. Endo, M. Masahrara, S. O'uchi, H. Yamauchi, K. Ishii, J. Tsukada, Y. Ishikawa, K. Sakamoto, E. Suzuki
Microelectronic Engineering 84 (9-10) 2101-2104 2007/09
DOI：
10.1016/j.mee.2007.04.080
ISSN：
0167-9317
-
Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses
Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shin Ichi O'uchi, Kenichi Ishii, Hiromi Yamauchi, Junichi Tsukada, Yuki Ishikawa, Eiichi Suzuki
IEEE Electron Device Letters 28 (6) 517-519 2007/06
DOI：
10.1109/LED.2007.896898
ISSN：
0741-3106
-
A dynamical power-management demonstration using four-terminal separated-ate FinFETs
K. Endo, Y. Ishikawa, Y. X. Liu, T. Matsukawa, S. O'uchi, K. Ishii, M. Masahara, J. Tsukada, H. Yamauchi, T. Sekigawa, H. Koike, E. Suzuki
IEEE Electron Device Letters 28 (5) 452-454 2007/05
DOI：
10.1109/LED.2007.895451
ISSN：
0741-3106
-
Ta/Mo stack dual metal gate technology applicable to gate-first processes
Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Meishoku Masahara, Kenichi Ishii, Hiromi Yamauchi, Junichi Tsukada, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (4 B) 1825-1829 2007/04
DOI：
10.1143/JJAP.46.1825
ISSN：
0021-4922
eISSN：
1347-4065
-
Four-terminal FinFETs fabricated using an etch-back gate separation
Kazuhiko Endo, Yuki Ishikawa, Yongxun Liu, Kenichi Ishii, Takashi Matsukawa, Shin Ichi O'uchi, Meishoku Masahara, Etsuro Sugimata, Jyunichi Tsukada, Hiromi Yamauchi, Eiichi Suzuki
IEEE Transactions on Nanotechnology 6 (2) 201-204 2007/03
DOI：
10.1109/TNANO.2007.891830
ISSN：
1536-125X
-
Fabrication and power-management demonstration of four-terminal FinFETs
K. Endo, Y. Liu, M. Masahara, T. Matsukawa, S. O'uchi, E. Suzuki
ECS Transactions 6 (4) 71-82 2007
DOI：
10.1149/1.2728843
ISSN：
1938-5862
eISSN：
1938-6737
-
Advanced DG-MOSFETs process technologies
E. Suzuki, Y. X. Liu, K. Endo, T. Matsukawa, M. Masahara, K. Sakamoto, S. O'uchi
ECS Transactions 11 (6) 339-348 2007
DOI：
10.1149/1.2778391
ISSN：
1938-5862
eISSN：
1938-6737
-
Optimum gate workfunction for v <inf>th</inf>-Controllable four-terminal-driven double-gate MOSFETs (4T-XMOSFETs) - Band-edge workfunction versus midgap workfunction
Meishoku Masahara, Shin Ichi O'Uchi, Yongxun Liu, Kunihiro Sakamoto, Kazuhiko Endo, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki
IEEE Transactions on Nanotechnology 5 (6) 716-721 2006/11
DOI：
10.1109/TNANO.2006.883484
ISSN：
1536-125X
-
Investigation of the TiN gate electrode with tunable work function and its application for FinFET fabrication
Yongxun Liu, Shinya Kijima, Etsuro Sugimata, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa, Kenichi Ishii, Kunihiro Sakamoto, Toshihiro Sekigawa, Hiromi Yamauchi, Yoshifumi Takanashi, Eiichi Suzuki
IEEE Transactions on Nanotechnology 5 (6) 723-728 2006/11
DOI：
10.1109/TNANO.2006.885035
ISSN：
1536-125X
-
Fabrication of FinFETs by damage-free neutral-beam etching technology
Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki
IEEE Transactions on Electron Devices 53 (8) 1826-1833 2006/08
DOI：
10.1109/TED.2006.877035
ISSN：
0018-9383
-
New fabrication technology of fin field effect transistors using neutral-beam etching
Kazuhiko Endo, Shuichi Noda, Takuya Ozaki, Seiji Samukawa, Meishoku Masahara, Yongxun Liu, Kenichi Ishii, Hidenori Takashima, Etsuro Sugimata, Takashi Matsukawa, Hiromi Yamauchi, Yuki Ishikawa, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (6 B) 5513-5516 2006/06/20
DOI：
10.1143/JJAP.45.5513
ISSN：
0021-4922
eISSN：
1347-4065
-
Demonstration and analysis of accumulation-mode double-gate metal-oxide-semiconductor field-effect transistor
Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shinichi O'Uchi, Kenichi Ishii, Etsuro Sugimata, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (4 B) 3079-3083 2006/04
DOI：
10.1143/JJAP.45.3079
ISSN：
0021-4922
eISSN：
1347-4065
-
Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching
Yongxun Liu, Etsuro Sugimata, Kenichi Ishii, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa, Hiromi Yamauchi, Shinichi O'Uchi, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (4 B) 3084-3087 2006/04
DOI：
10.1143/JJAP.45.3084
ISSN：
0021-4922
eISSN：
1347-4065
-
Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate
Kazuhiko Endo, Meishoku Masahara, Yongxun Liu, Takashi Matsukawa, Kenichi Ishii, Etsurou Sugimata, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (4 B) 3097-3100 2006/04
DOI：
10.1143/JJAP.45.3097
ISSN：
0021-4922
eISSN：
1347-4065
-
Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching
Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 2: Letters 45 (8-11) 2006/03/10
DOI：
10.1143/JJAP.45.L279
ISSN：
0021-4922
eISSN：
1347-4065
-
Four-terminal double-gate logic for LSTP applications below 32-nm technology node
O'Uchi, S., Liu, Y. X., Masahara, M., Tsutsumi, T., Endo, K., Nakagawa, T., Hioki, M., Sekigawa, T., Koike, H., Suzuki, E., Ieee,
2006
-
Advanced TiN metal-gate FinFET technology
Y. X. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, K. Ishii, T. Shimizu, H. Yamauchi, S. O'uchi, Eiichi Suzuki
ECS Transactions 2 (1) 197-208 2006
ISSN：
1938-5862
eISSN：
1938-6737
-
Vertical double-gate MOSFET device technology
Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki
IEEJ Transactions on Electronics, Information and Systems 126 (6) 2006
DOI：
10.1541/ieejeiss.126.702
ISSN：
0385-4221
eISSN：
1348-8155
-
Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain
Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Kenichi Ishii, Shinichi O'uchi, Etsuro Sugimata, Hiromi Yamauchi, Eiichi Suzuki
Applied Physics Letters 88 (7) 2006
DOI：
10.1063/1.2173715
ISSN：
0003-6951
-
Deoxidization of Cu oxide under extremely low oxygen pressure ambient
Kazuhiko Endo, Naoki Shirakawa, Yoshiyuki Yoshida, Shin Ichi Ikeda, Tetsuya Mlno, Eishi Gofuku, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 2: Letters 45 (12-16) 2006
DOI：
10.1143/JJAP.45.L393
ISSN：
0021-4922
eISSN：
1347-4065
-
Demonstration, analysis, and device design considerations for independent DG MOSFETs
Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto, Kazuhiko Endo, Takashi Matsukawa, Kenichi Ishii, Toshihiro Sekigawa, Hiromi Yamauchi, Hisao Tanoue, Seigo Kanemaru, Hanpei Koike, Eiichi Suzuki
IEEE Transactions on Electron Devices 52 (9) 2046-2053 2005/09
DOI：
10.1109/TED.2005.855063
ISSN：
0018-9383
-
Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching
Y. X. Liu, E. Sugimata, M. Masahara, K. Endo, K. Ishii, T. Matsukawa, H. Takashima, H. Yamauchi, E. Suzuki
Microelectronic Engineering 80 (SUPPL.) 390-393 2005/06/17
DOI：
10.1016/j.mee.2005.04.014
ISSN：
0167-9317
-
Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions
T. Matsukawa, Y. X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata, H. Takashima, T. Higashino, E. Suzuki, S. Kanemaru
Microelectronic Engineering 80 (SUPPL.) 284-287 2005/06/17
DOI：
10.1016/j.mee.2005.04.034
ISSN：
0167-9317
-
Device design consideration for V<inf>th</inf>-controllable four-terminal double-gate metal-oxide-semiconductor field-effect transistor
Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto, Kazuhiko Endo, Toshihiro Sekigawa, Takashi Matsukawa, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (4 B) 2351-2356 2005/04
DOI：
10.1143/JJAP.44.2351
ISSN：
0021-4922
-
Demonstration of dopant profiling in ultrathin channels of vertical-type double-gate metal-oxide-semiconductor field-effect-transistor by scanning nonlinear Dielectric microscopy
Meishoku Masahara, Shinichi Hosokawa, Takashi Matsukawa, Kazuhiko Endo, Yuichi Naitou, Hisao Tanoue, Eiichi Suzuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (4 B) 2400-2404 2005/04
DOI：
10.1143/JJAP.44.2400
ISSN：
0021-4922
-
An experimental study on the thermal stability of sputtered TiN gates for gate-first FinFETs
Y. X. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, K. Ishii, T. Shimizu, E. Suzuki
2005 International Semiconductor Device Research Symposium 2005 201-202 2005
-
Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration
Liu, Y. X., Endo, K., Masahara, M., Sugimata, E., Matsukawa, T., Ishii, K., Yamauchi, H., Shimizu, T., Sakamoto, K., O'Uchi, S., Sekigawa, T., Suzuki, E., Ieee,
2005
-
Dopant profiling in vertical ultrathin channels of double-gate metal-oxide-semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy
Meishoku Masahara, Shinichi Hosokawa, Takashi Matsukawa, Kazuhiko Endo, Yuuichi Naitou, Hisao Tanoue, Eiichi Suzuki
Applied Physics Letters 85 (18) 4139-4141 2004/11/01
DOI：
10.1063/1.1812571
ISSN：
0003-6951
-
Precipitate-free films of La <inf>1-x</inf>Sr <inf>x</inf>MnO <inf>3</inf> grown on the substrates with artificial step edges
Y. Ishii, H. Sato, A. Sawa, T. Yamada, H. Akoh, K. Endo, M. Kawasaki, Y. Tokura
Applied Physics Letters 85 (17) 3800-3802 2004/10/25
DOI：
10.1063/1.1807969
ISSN：
0003-6951
-
Metal organic atomic layer deposition of metal silicate film for high-k gate dielectrics
Kazuhiko Endo, Toru Tatsumi
Japanese Journal of Applied Physics, Part 2: Letters 43 (10 A) 2004/10/01
DOI：
10.1143/JJAP.43.L1296
ISSN：
0021-4922
-
On the V-th controllability for 4-terminal double-gate MOSFETs
Masahara, A., Liu, Y. X., Sakamoto, K., Endo, K., Ishii, K., Matsukawa, T., Hosokawa, S., Sekigawa, T., Tanoue, H., Yamauchi, H., Kanemaru, S., Suzuki, E., Ieee,
2004
-
Suppression of Charges in Al<inf>2</inf>O<inf>3</inf> Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo Manabe, Kazuhiko Endo, Satoshi Kamiyama, Toshiyuki Iwamoto, Takashi Ogura, Nobuyuki Ikarashi, Toyoji Yamamoto, Toru Tatsumi
IEICE Transactions on Electronics E87-C (1) 30-36 2004/01
ISSN：
0916-8524
-
Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation
Kazuhiko Endo, Toru Tatsumi
Japanese Journal of Applied Physics, Part 2: Letters 42 (6 B) 2003/06/15
DOI：
10.1143/jjap.42.l685
ISSN：
0021-4922
-
Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi
Journal of Applied Physics 86 (5) 2739-2745 1999/09
DOI：
10.1063/1.371119
ISSN：
0021-8979
-
Fluorinated amorphous carbon thin films for multilevel interconnections of integrated circuits
Toru Tatsumi, Kazuhiko Endo
Journal of Photopolymer Science and Technology 12 (2) 193-198 1999
DOI：
10.2494/photopolymer.12.193
ISSN：
0914-9244
-
Application of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics
Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara, Tadahiko Horiuchi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (4 SUPPL. A) 1809-1814 1998/04
DOI：
10.1143/jjap.37.1809
ISSN：
0021-4922
-
RC delay reduction of 0.18 mu m CMOS technology using low dielectric constant fluorinated amorphous carbon
Matsubara, Y., Kishimoto, K., Endo, K., Iguchi, M., Tatsumi, T., Gomi, H., Horiuchi, T., Tzou, E., Xi, M., Cheng, L. Y., Tribula, D., Moghadam, F., Ieee, Ieee
1998
DOI：
10.1109/iedm.1998.746486
-
Controlling fluorine concentration of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics
Kazuhiko Endo, Toru Tatsumi
Japanese Journal of Applied Physics, Part 2: Letters 36 (11 SUPPL. B) 1997/11/15
DOI：
10.1143/jjap.36.l1531
ISSN：
0021-4922
-
Fluorinated amorphous carbon as a low-dielectric-constant interlayer dielectric
Kazuhiko Endo
MRS Bulletin 22 (10) 55-58 1997/10
DOI：
10.1557/S0883769400034217
ISSN：
0883-7694
-
Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics
Kazuhiko Endo, Toru Tatsumi
Applied Physics Letters 70 (19) 2616-2618 1997/05/12
DOI：
10.1063/1.118935
ISSN：
0003-6951
-
Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara
Applied Physics Letters 70 (9) 1078-1079 1997/03/03
DOI：
10.1063/1.118490
ISSN：
0003-6951
-
Plasma fluorination of polyimide thin films
Kazuhiko Endo, Toru Tatsumi
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 15 (6) 3134-3137 1997
DOI：
10.1116/1.580857
ISSN：
0734-2101
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Fluorinated amorphous carbon thin films grown from C <inf>4</inf>F <inf>8</inf> for multilevel interconnections of integrated circuits
Kazuhiko Endo, Toru Tatsumi
NEC Research and Development 38 (3) 287-292 1997
ISSN：
0547-051X
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Effect of bias addition on the gap-filling properties of fluorinated amorphous carbon thin films grown by helicon wave plasma-enhanced chemical vapor deposition
Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara
Japanese Journal of Applied Physics, Part 2: Letters 35 (10 SUPPL. B) 1996/10/15
DOI：
10.1143/jjap.35.l1348
ISSN：
0021-4922
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Low-k fluorinated amorphous carbon interlayer technology for quarter micron devices
Matsubara, Y., Endo, K., Tatsumi, T., Ueno, H., Sugai, K., Horiuchi, T., Ieee,
1996
DOI：
10.1109/iedm.1996.553605
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Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
Kazuhiko Endo, Toru Tatsumi
Applied Physics Letters 68 (20) 2864-2866 1996
DOI：
10.1063/1.116350
ISSN：
0003-6951
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Changes in transition temperature of the Si(111)1 × 1-7 × 7 phase transition observed under various oxygen environments
Katsuyuki Tsukui, Kazuhiko Endo, Ryu Hasunuma, Osamu Hirabayashi, Nobuaki Yagi, Hajime Aihara, Toshiaki Osaka, Iwao Ohdomari
Surface Science 328 (3) 1995/05/01
DOI：
10.1016/0039-6028(95)00233-2
ISSN：
0039-6028
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Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
Kazuhiko Endo, Toru Tatsumi
Journal of Applied Physics 78 (2) 1370-1372 1995
DOI：
10.1063/1.360313
ISSN：
0021-8979
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Extremely High Vacuum System for Dynamical Surface Analysis
Katsuyuki Tsukui, Kazuhiko Endo, Ryu Hasunuma, Toshiaki Osaka, Iwao Ohdomari
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 11 (5) 2655-2658 1993/09
DOI：
10.1116/1.578621
ISSN：
0734-2101
eISSN：
1520-8559
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Treatment of the wall materials of extremely high vacuum chamber for dynamical surface analysis
Katsuyuki Tsukui, Ryu Hasunuma, Kazuhiko Endo, Toshiaki Osaka, Iwao Ohdomari
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 11 (2) 417-421 1993/03
DOI：
10.1116/1.578746
ISSN：
0734-2101
eISSN：
1520-8559
https://orcid.org/0000-0002-3517-3580