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Koichi Kakimoto

Section

Institute for Materials Research

Job title

Specially Appointed Professor(Research)

Degree

工学博士（東京大学）
工学修士（東京大学）

researchmap

https://researchmap.jp/read0189098

J-GLOBAL ID

200901021046105589

Research History 10

2022/02 - Present

Tohoku University　New Industry Creation Hatchery Center　Professor
2021/04 - 2022/01

Kyushu University　Research Institute for Applied Mechanics　Professor
2001/04 - 2021/03

Kyushu University　Research Institute for Applied Mechanics　Professor
1996/10 - 2001/03

Kyushu University　IAMS　Associate professor
1995 - 1996

Tohoku University　Institute for Materials Research
1995 - 1996

Visiting professor, IMR Tohoku University
1985 - 1996

NEC基礎研究所研究員
1985 - 1996

NEC Fundamental Research Laboratories.
1989 - 1991

ルーバン大学研究員
1989 - 1991

Researcher, Universite catholique des Louvain

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Education 4

The University of Tokyo

- 1985
The University of Tokyo　Graduate School, Division of Engineering

- 1985
Saitama University

- 1979
Saitama University　Faculty of Science and Engineering

- 1979

Committee Memberships 5

国際結晶成長機構　会長

2016/08 - 2023/08
日本結晶成長学会　会長

2016/04 - 2019/11
学術振興会145委員会　副委員長

2010/04 - 2016/08
IOCG　Secretary

2010/08 - 2012/08
日本結晶成長学会　副会長

2010/04 -

Professional Memberships 5

日本マイクログラビティ応用学会
Electrochemical Society
化学工学会
応用物理学会
日本結晶成長学会

Research Interests 5

電子材料工学
結晶成長
Inorganic Material
Electronic Material
Crystal Engineering

Research Areas 4

Nanotechnology/Materials / Inorganic materials /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /
Nanotechnology/Materials / Crystal engineering /
Nanotechnology/Materials / Applied materials /

Awards 9

Frank Prize

2025/08　International Organization for Crystal Growth　Development and promotion of numerical modelling in the field of bulk crystal growth, introducing new mathematical tools, new physical and chemical models, and experimental validation methodology, for the benefit of research and industry.
JACG Outstanding Achievement Award and Isamu Akasaki Award

2023/12　JACG
文部科学大臣表彰科学技術賞（研究)

2019/06　文部科学省
ルーマニア物質科学結晶成長会議賞

2017/07　ルーマニア物質科学結晶成長会議
貢献賞

2014/11　日本結晶成長学会
JPSJ Prize

2006/06　Japanise Physical Society of Japan
Contritution prize

2005/08　Japanese Association for Crystal Growth
化学工学会計算流体力学賞

1996
日本結晶成長学会論文賞

1989

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Papers 183

Heat transfer in β-Ga<inf>2</inf>O<inf>3</inf> crystal grown through a skull melting method

Koichi Kakimoto, Isao Takahashi, Taketoshi Tomida, Vladimir V. Kochurikhin, Kei Kamada, Satoshi Nakano, Akira Yoshikawa

Journal of Crystal Growth　629　2024/03/01

DOI： 10.1016/j.jcrysgro.2023.127553 　

ISSN： 0022-0248
Study of twisting of β-Ga<inf>2</inf>O<inf>3</inf> crystals based on optical absorption and thermal conductivity anisotropy in the crystals grown by the Czochralski method

Koichi Kakimoto, Isao Takahashi, Taketoshi Tomida, Vladimir V. Kochurikhin, Kei Kamada, Satoshi Nakano, Akira Yoshikawa

Journal of Crystal Growth　628　2024/02/15

DOI： 10.1016/j.jcrysgro.2023.127550 　

ISSN： 0022-0248
Effect of crucible thermal conductivity on dislocation distribution in crystals in a silicon carbide physical vapor transport furnace

Kazuma Miyazaki, Satoshi Nakano, Shin ichi Nishizawa, Koichi Kakimoto

Journal of Crystal Growth　603　2023/02/01

DOI： 10.1016/j.jcrysgro.2022.126981 　

ISSN： 0022-0248
Carbon monoxide concentrations in a Czochralski growth furnace

Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, K. Kakimoto

Journal of Crystal Growth　558　2021/03/15

DOI： 10.1016/j.jcrysgro.2020.126015 　

ISSN： 0022-0248
Phase diagram of the Ag<inf>2</inf>SnS<inf>3</inf>–ZnS pseudobinary system for Ag<inf>2</inf>ZnSnS<inf>4</inf> crystal growth

Akira Nagaoka, Kenji Yoshino, Koichi Kakimoto, Kensuke Nishioka

Journal of Crystal Growth　555　2021/02/01

DOI： 10.1016/j.jcrysgro.2020.125967 　

ISSN： 0022-0248
Analysis of the Effect of Cusp-Shaped Magnetic Fields on Heat, Mass, and Oxygen Transfer Using a Coupled 2D/3D Global Model

Koichi Kakimoto, Xin Liu, Satoshi Nakano

Crystal Research and Technology　2021
Publisher: John Wiley and Sons Inc
DOI： 10.1002/crat.202100092 　

ISSN： 1521-4079 0232-1300
Numerical analysis of phosphorus concentration distribution in a silicon crystal during directional solidification process

Satoshi Nakano, Xin Liu, Xue-Feng Han, Koichi Kakimoto

Crystals　11　(1)　1-10　2021/01/01
Publisher: MDPI AG
DOI： 10.3390/cryst11010027 　

ISSN： 2073-4352
Absolute surface energies of oxygen-adsorbed GaN surfaces

Takahiro Kawamura, Toru Akiyama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto

Journal of Crystal Growth　549　125868-125868　2020/11
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2020.125868 　

ISSN： 0022-0248
Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

Xue-Feng Han, Xin Liu, Satoshi Nakano, Koichi Kakimoto

Journal of Crystal Growth　545　2020/09/01
Publisher: Elsevier B.V.
DOI： 10.1016/j.jcrysgro.2020.125752 　

ISSN： 0022-0248
Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization

Ryohei Sato, Koichi Kakimoto, Wataru Saito, Shin Ichi Nishizawa

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　2020-September　494-497　2020/09

DOI： 10.1109/ISPSD46842.2020.9170035 　

ISSN： 1063-6854
3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth Peer-reviewed

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

CRYSTALS　10　(2)　2020/02

DOI： 10.3390/cryst10020121 　

ISSN： 2073-4352
3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth Peer-reviewed

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　532　2020/02

DOI： 10.1016/j.jcrysgro.2019.125403 　

ISSN： 0022-0248

eISSN： 1873-5002
Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model Peer-reviewed

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　532　2020/02

DOI： 10.1016/j.jcrysgro.2019.125405 　

ISSN： 0022-0248

eISSN： 1873-5002
Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon Peer-reviewed

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　532　2020/02

DOI： 10.1016/j.jcrysgro.2019.125404 　

ISSN： 0022-0248

eISSN： 1873-5002
In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals Peer-reviewed

Y. Miyamura, H. Harada, X. Liu, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

Journal of Crystal Growth　507　154-156　2019/02

DOI： 10.1016/j.jcrysgro.2018.11.017 　

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Power devices with high-performance require long carrier lifetimes within their silicon crystals. This paper reports the in-situ measurement of carbon monoxide in a Czochralski growth furnace of silicon single crystals. Moreover, this paper reports analytical investigation on contamination to silicon melt as functions of pressure in the furnace, argon gas flow velocity and gap width between the melt and a thermal shield. The experimental results show the carbon contamination to the melt increases when the pressure increases and the flow rate decreases. Increase of the gap width increases the contamination of carbon. We could explain the results qualitatively using a simple transport model.
Carbon impurity in crystalline silicon

Bing Gao, Koichi Kakimoto

Handbook of Photovoltaic Silicon　437-462　2019/01/01
Publisher: Springer Berlin Heidelberg
DOI： 10.1007/978-3-662-56472-1_21 　
First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth Peer-reviewed

Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto, Toru Akiyama

JAPANESE JOURNAL OF APPLIED PHYSICS　57　(11)　2018/11

DOI： 10.7567/JJAP.57.115504 　

ISSN： 0021-4922

eISSN： 1347-4065
Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth Peer-reviewed

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　499　8-12　2018/10

DOI： 10.1016/j.jcrysgro.2018.07.020 　

ISSN： 0022-0248

eISSN： 1873-5002
Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation Peer-reviewed

Ishikawa Yoichiro, Tajima Michio, Kiuchi Hirotatsu, Ogura Atsushi, Miyamura Yoshiji, Harada Hirofumi, Kakimoto Koichi

JAPANESE JOURNAL OF APPLIED PHYSICS　57　(8)　2018/08

DOI： 10.7567/JJAP.57.08RB06 　

ISSN： 0021-4922
Relationship between dislocation density and oxygen concentration in silicon crystals during directional solidification Peer-reviewed

Tomoro Ide, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Satoshi Nakano, Koichi Kakimoto

Crystals　8　(6)　2018/06/07
Publisher: MDPI AG
DOI： 10.3390/cryst8060244 　

ISSN： 2073-4352
Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals? Peer-reviewed

Y. Miyamura, H. Harada, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

Journal of Crystal Growth　489　1-4　2018/05

DOI： 10.1016/j.jcrysgro.2018.02.034 　

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High-performance electronics require long carrier lifetimes within their silicon crystals. This paper reports the effects of thermal donors on the lifetimes of carriers in as-grown n-type silicon crystals grown by the Czochralski method. We grew silicon crystals with two different concentrations of thermal donors using the following two cooling processes: one was cooled with a 4-h halt after detaching the crystal from the melt, and the other was cooled continuously. The crystal grown with the cooling halt contained higher concentrations of thermal donors of the order of 1 × 10¹³ cm⁻³, while the crystal without the halt had no thermal donors. The measured bulk lifetimes were in the range of 15–18 ms. We concluded that thermal donors in Czochralski-grown silicon crystals do not act to reduce their lifetimes.
3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth Peer-reviewed

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY　53　(5)　2018/05

DOI： 10.1002/crat.201700246 　

ISSN： 0232-1300

eISSN： 1521-4079
Effect of oxygen on dislocation multiplication in silicon crystals Peer-reviewed

Wataru Fukushima, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Satoshi Nakano, Koichi Kakimoto

Journal of Crystal Growth　486　45-49　2018/03/15
Publisher: Elsevier B.V.
DOI： 10.1016/j.jcrysgro.2017.12.030 　

ISSN： 0022-0248
Relationship between carbon concentration and carrier lifetime in CZ-Si crystals Peer-reviewed

Y. Miyamura, H. Harada, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

Journal of Crystal Growth　486　56-59　2018/03

DOI： 10.1016/j.jcrysgro.2018.01.020 　

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This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 10¹⁷ atoms/cm³, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.
3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon Peer-reviewed

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　483　269-274　2018/02

DOI： 10.1016/j.jcrysgro.2017.12.012 　

ISSN： 0022-0248

eISSN： 1873-5002
Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth Peer-reviewed

Xin Liu, Xue-Feng Han, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　483　241-244　2018/02

DOI： 10.1016/j.jcrysgro.2017.12.016 　

ISSN： 0022-0248

eISSN： 1873-5002
Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

Japanese Journal of Applied Physics　57　(4S)　04FJ03-1-4　2018

DOI： 10.7567/JJAP.57.04FJ03 　
DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy International-journal International-coauthorship Peer-reviewed

Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano

Applied Physics Letters　111　(14)　141602:1-141602:5　2017/10/02
Publisher: AIP Publishing
DOI： 10.1063/1.4991608 　
Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

S. Nakano, B. Gao, K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, M. Fukuzawa, K. Kakimoto

Journal of Crystal Growth　474　130-134　2017/09
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2016.12.007 　

ISSN： 0022-0248
Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth Peer-reviewed

Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　474　3-7　2017/09

DOI： 10.1016/j.jcrysgro.2016.12.013 　

ISSN： 0022-0248

eISSN： 1873-5002
Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations Peer-reviewed

B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　474　121-129　2017/09

DOI： 10.1016/j.jcrysgro.2016.12.059 　

ISSN： 0022-0248

eISSN： 1873-5002
Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics International-journal International-coauthorship Peer-reviewed

Akira Kusaba, Guanchen Li, Michael R. von, Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto

Materials　10　(8)　948:1-948:13　2017/08/15
Publisher: Multidisciplinary Digital Publishing Institute
DOI： 10.3390/ma10080948 　
First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions

Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS　254　(8)　1600706-1-6　2017/08

DOI： 10.1002/pssb.201600706 　

ISSN： 0370-1972

eISSN： 1521-3951
On the phase transformation of single-crystal 4H-SiC during nanoindentation Peer-reviewed

Mitsuhiro Matsumoto, Hu Huang, Hirofumi Harada, Koichi Kakimoto, Jiwang Yan

JOURNAL OF PHYSICS D-APPLIED PHYSICS　50　(26)　2017/07

DOI： 10.1088/1361-6463/aa7489 　

ISSN： 0022-3727

eISSN： 1361-6463
Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(7)　078003-1-3　2017/07

DOI： 10.7567/JJAP.56.078003 　

ISSN： 0021-4922

eISSN： 1347-4065
Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy International-journal International-coauthorship Peer-reviewed

Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu

Japanese Journal of Applied Physics　56　(7)　070304:1-070304:4　2017/06/08
Publisher: IOP Publishing
DOI： 10.7567/JJAP.56.070304 　
Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth Peer-reviewed

Xin Liu, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　468　595-600　2017/06

DOI： 10.1016/j.jcrysgro.2016.09.062 　

ISSN： 0022-0248

eISSN： 1873-5002
Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process Peer-reviewed

S. Nakano, B. Gao, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　468　839-844　2017/06

DOI： 10.1016/j.jcrysgro.2017.01.034 　

ISSN： 0022-0248

eISSN： 1873-5002
First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

K. Sekiguchi, H. Shirakawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

JOURNAL OF CRYSTAL GROWTH　468　950-953　2017/06

DOI： 10.1016/j.jcrysgro.2016.12.044 　

ISSN： 0022-0248

eISSN： 1873-5002
Ab initio model for GaAs1-xNx chemical beam epitaxy using GaAs(100) surface stability over As-2, H-2, and N-2

Hubert Valencia, Yoshihiro Kangawa, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(6)　060306-1-3　2017/06

DOI： 10.7567/JJAP.56.060306 　

ISSN： 0021-4922

eISSN： 1347-4065
Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As-2, H-2 and N-2

Hubert Valencia, Yoshihiro Kangawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　468　557-561　2017/06

DOI： 10.1016/j.jcrysgro.2016.11.056 　

ISSN： 0022-0248

eISSN： 1873-5002
Ab initio model for GaAs

Valencia Hubert, Kangawa Yoshihiro, Kakimoto Koichi

Jpn. J. Appl. Phys.　56　(6)　60306-60306　2017/05/18
Publisher: Institute of Physics
DOI： 10.7567/JJAP.56.060306 　

ISSN： 0021-4922

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A model for the chemical beam epitaxy (CBE) of GaAs<inf>1−</inf><inf>x</inf>N<inf>x</inf>was previously constructed on the basis of first-principles calculations of (100) surfaces of GaAs with As<inf>2</inf>and H<inf>2</inf>adsorptions and As/N substitution to simulate As<inf>2</inf>, H<inf>2</inf>, and N<inf>2</inf>mixed gas conditions. We previously demonstrated that this model can be used to predict the temperature and pressure dependences of the growth behavior in metal–organic chemical vapor deposition (MOCVD). In this paper, we show that little modification is needed to transpose this model to CBE experiments. Our model allows us to predict transition temperatures at which Arrhenius regimes of N<inf>2</inf>incorporation are changed. Additionally, an explanation of the trend of resulting regimes is given, which is based on the analysis of surface stability during growth at different temperatures.
Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(4)　04CJ04-1-4　2017/04

DOI： 10.7567/JJAP.56.04CJ04 　

ISSN： 0021-4922

eISSN： 1347-4065
Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(3)　038002-1-3　2017/03

DOI： 10.7567/JJAP.56.038002 　

ISSN： 0021-4922

eISSN： 1347-4065
Development of carbon transport and modeling in Czochralski silicon crystal growth Peer-reviewed

Xin Liu, Satoshi Nakano, Koichi Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY　52　(1)　2017/01

DOI： 10.1002/crat.201600221 　

ISSN： 0232-1300

eISSN： 1521-4079
First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN

Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto

ECS Transactions　80　(1)　295-301　2017

DOI： 10.1149/08001.0295ecst 　
Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation Peer-reviewed

Karolin Jiptner, Yoshiji Miyamura, Hirofumi Harada, Bing Gao, Koichi Kakimoto, Takashi Sekiguchi

PROGRESS IN PHOTOVOLTAICS　24　(12)　1513-1522　2016/12

DOI： 10.1002/pip.2708 　

ISSN： 1062-7995

eISSN： 1099-159X
Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy International-journal International-coauthorship Peer-reviewed

Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

Applied Physics Express　9　(12)　125601:1-125601:4　2016/11/17
Publisher: IOP Publishing
DOI： 10.7567/APEX.9.125601 　

ISSN： 1882-0778

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We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and [Formula: see text] by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.
Growth of semiconductor silicon crystals Peer-reviewed

Koichi Kakimoto, Bing Gao, Xin Liu, Satoshi Nakano

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS　62　(2)　273-285　2016/06

DOI： 10.1016/j.pcrysgrow.2016.04.014 　

ISSN： 0960-8974
Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory Peer-reviewed

S. Araki, B. Gao, S. Nishizawa, S. Nakano, K. Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY　51　(5)　344-348　2016/05

DOI： 10.1002/crat.201500344 　

ISSN： 0232-1300

eISSN： 1521-4079
Numerical analysis of dislocation density and residual strain in multicrystalline silicon for solar cells using experimental verification

Nakano Satoshi, Gao Bing, Jiptner Karolin, Harada Hirofumi, Miyamura Yoshiji, Sekiguchi Takashi, Fukuzawa Masayuki, Kakimoto Koichi

150　1-5　2016/03
Publisher: Research Institute for Applied Mechanics, Kyushu University
DOI： 10.15017/1660355 　

ISSN： 1345-5664
Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics

Takahiro Kawamura, Mitsutoshi Mizutani, Yasuyuki Suzuki, Yoshihiro Kangawa, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　55　(3)　031301-1-5　2016/03

DOI： 10.7567/JJAP.55.031301 　

ISSN： 0021-4922

eISSN： 1347-4065
Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy International-journal Peer-reviewed

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

Japanese Journal of Applied Physics　55　(5S)　05FM01:1-05FM01:4　2016/02/26
Publisher: IOP Publishing
DOI： 10.7567/JJAP.55.05FM01 　

ISSN： 0021-4922

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We investigated the surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy using an ab initio-based approach. We observed that the reconstructed structure changes from In-rich surfaces such as In bilayer and monolayer surfaces to an ideal surface with increasing growth temperature. In addition, we investigated the effects of surface reconstruction on the growth process using a newly improved thermodynamic analysis method. Although no barrier is present in the growth reaction when the In-rich surfaces appear, the results suggest that the surface phase acts as a barrier in the growth reaction when the ideal surface appears. Furthermore, we discuss the growth conditions that enable high-temperature growth with a smooth reaction path.
Orientation dependency of dislocation generation in Si growth process Peer-reviewed

Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

Solid State Phenomena　242　15-20　2016
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/SSP.242.15 　

ISSN： 1662-9779
50 cm size seed cast Si ingot growth and its characterization Peer-reviewed

Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto

Solid State Phenomena　242　30-34　2016
Publisher: Trans Tech Publications Ltd
DOI： 10.4028/www.scientific.net/SSP.242.30 　

ISSN： 1662-9779
Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1-xNx Peer-reviewed

Valencia H, Kangawa Y, Kakimoto K

Journal of Crystal Growth　432　6-14　2015/12/15

DOI： 10.1016/j.jcrysgro.2015.09.005 　

ISSN： 0022-0248
Single-Seed Casting Large-Size Monocrystalline Silicon for High-Effi ciency and Low-Cost Solar Cells Peer-reviewed

Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto

ENGINEERING　1　(3)　378-383　2015/09

DOI： 10.15302/J-ENG-2015032 　

ISSN： 2095-8099

eISSN： 2096-0026
Growth and characterization of Cu2ZnSn(S,Se)4 single crystal grown by traveling heater method Peer-reviewed

Akira Nagaoka, Akira Nagaoka, Ryoji Katsube, Shigeru Nakatsuka, Kenji Yoshino, Tomoyasu Taniyama, Hideto Miyake, Koichi Kakimoto, Michael A. Scarpulla, Yoshitaro Nose

Journal of Crystal Growth　423　9-15　2015/08
Publisher: Elsevier BV
DOI： 10.1016/j.jcrysgro.2015.04.012 　

ISSN： 0022-0248
Structural and optical properties of AIN grown by solid source solution growth method Peer-reviewed

Yoshihiro Kangawa, Hiroshige Suetsugu, Michael Knetzger, Elke Meissner, Kouji Hazu, Shigefusa F.Chichibu, Takashi Kajiwara, Satoru Tanaka, Yosuke Iwasaki, Koichi Kakimoto

Japanese Journal of Applied Physics　54　085501-1-5　2015/07

DOI： 10.7567/JJAP.54.085501 　

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Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth Peer-reviewed

Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY　50　(6)　458-463　2015/06

DOI： 10.1002/crat.201500014 　

ISSN： 0232-1300

eISSN： 1521-4079
Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN International-journal International-coauthorship Peer-reviewed

Yoshihiro Kangawa, Akira Kusaba, Hiroaki Sumiyoshi, Hideto Miyake, Michał Boćkowski, Koichi Kakimoto

Applied Physics Express　8　(6)　065601:1-065601:3　2015/06/01
Publisher: IOP Publishing
DOI： 10.7567/APEX.8.065601 　

ISSN： 1882-0778

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Interfacial phenomena at the liquid/solid interface under high temperatures were observed in real time to understand the growth process of AlN during solid-source solution growth. In this study, we used an AlN/α-Al<inf>2</inf>O<inf>3</inf>template as the substrate; these wide-bandgap materials made the substrate transparent to visible light. Therefore, we observed the morphology of the liquid/solid interface through the template from the bottom. In this investigation, a polycrystal formed because of melt-back etching during the initial stage of growth; nevertheless, we succeeded in obtaining real-time images of interfacial phenomena.
Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth Peer-reviewed

Xin Liu, Bing Gao, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　417　58-64　2015/05

DOI： 10.1016/j.jcrysgro.2014.07.040 　

ISSN： 0022-0248

eISSN： 1873-5002
Modeling of basal plane dislocations in single-crystal sapphire

Gao Bing, Kakimoto Koichi

(148)　1-6　2015/03
Publisher: Research Institute for Applied Mechanics, Kyushu University
DOI： 10.15017/1526335 　

ISSN： 1345-5664
Numerical analysis of crystal growth of seciconductors

Kakimoto Koichi

Abstract of annual meeting of the Surface Science of Japan　35　63-63　2015
Publisher: The Surface Science Society of Japan
DOI： 10.14886/sssj2008.35.0_63 　
Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells Peer-reviewed

Bing Gao, Koichi Kakimoto

Lecture Notes in Physics　916　241-272　2015
Publisher: Springer Verlag
DOI： 10.1007/978-4-431-55800-2_5 　

ISSN： 0075-8450
Control of extended defects in cast and seed cast Si ingots for photovoltaic application Peer-reviewed

Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8　12　(8)　1094-1098　2015

DOI： 10.1002/pssc.201400230 　

ISSN： 1862-6351
Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Satoshi Nakano, Bing Gao, Koichi Kakimoto, Kyotaro Nakamura, Yoshio Ohshita, Atsushi Ogura, Shin Sugawara, Takashi Sekiguchi

Applied Physics Express　8　(6)　62301-62301　2015/01/01
Publisher: Institute of Physics
DOI： 10.7567/APEX.8.062301 　

ISSN： 1882-0778
Fluid Dynamics: Modeling and Analysis Peer-reviewed

Koichi Kakimoto, Bing Gao

Handbook of Crystal Growth: Bulk Crystal Growth: Second Edition　2　845-870　2014/12/17
Publisher: Elsevier Inc.
DOI： 10.1016/B978-0-444-63303-3.00021-3 　
Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth

Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi

147　1-5　2014/09
Publisher: Research Institute for Applied Mechanics, Kyushu University
DOI： 10.15017/1526210 　

ISSN： 1345-5664
Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization Peer-reviewed

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi

JOURNAL OF CRYSTAL GROWTH　401　133-136　2014/09

DOI： 10.1016/j.jcrysgro.2014.03.016 　

ISSN： 0022-0248

eISSN： 1873-5002
Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal Peer-reviewed

Ronit R. Prakash, Takashi Sekiguchi, Karolin Jiptner, Yoshiji Miyamura, Jun Chen, Hirofumi Harada, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　401　717-719　2014/09

DOI： 10.1016/j.jcrysgro.2013.01.067 　

ISSN： 0022-0248

eISSN： 1873-5002
Alexander-Haasen Model of Basal Plane Dislocations in Single-Crystal Sapphire Peer-reviewed

B. Gao, S. Nakano, N. Miyazaki, K. Kakimoto

CRYSTAL GROWTH & DESIGN　14　(8)　4080-4086　2014/08

DOI： 10.1021/cg500705t 　

ISSN： 1528-7483

eISSN： 1528-7505
Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001) and [Formula: see text]

Iguchi Ryosuke, Kawamura Takahiro, Suzuki Yasuyuki, Inoue Masato, Kangawa Yoshihiro, Kakimoto Koichi

Jpn. J. Appl. Phys.　53　(6)　65601-65601　2014/05/13
Publisher: Institute of Physics
DOI： 10.7567/JJAP.53.065601 　

ISSN： 0021-4922
Characterization of residual strain in Si ingots grown by the seed-cast method Peer-reviewed

Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV　205-206　94-99　2014

DOI： 10.4028/www.scientific.net/SSP.205-206.94 　

ISSN： 1012-0394
Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory Peer-reviewed

T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　385　95-99　2014/01

DOI： 10.1016/j.jcrysgro.2013.03.036 　

ISSN： 0022-0248

eISSN： 1873-5002
10 cm diameter mono cast Si growth and its characterization

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, K. Kakimoto

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV　205-206　89-93　2014

DOI： 10.4028/www.scientific.net/SSP.205-206.89 　

ISSN： 1012-0394
Relationship between outgoing total heat transfer rate and dislocation density, residual stress in multicrystalline silicon for solar cells

145　73-77　2013/09
Publisher:
DOI： 10.15017/1526125 　

ISSN： 1345-5664
Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture Peer-reviewed

S. Nakano, B. Gao, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　375　62-66　2013/07

DOI： 10.1016/j.jcrysgro.2013.04.001 　

ISSN： 0022-0248
Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocation in crystal growth Peer-reviewed

B. Gao, S. Nakano, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　369　32-37　2013/04

DOI： 10.1016/j.jcrysgro.2013.01.039 　

ISSN： 0022-0248
Evaluation of residual strain in directional solidified mono-Si ingots Peer-reviewed

Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 1　10　(1)　141-145　2013

DOI： 10.1002/pssc.201200884 　

ISSN： 1862-6351
Electrical Properties of Cu2ZnSnS4 Single Crystal Peer-reviewed

Akira Nagaoka, Kenji Yoshino, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)　2621-2624　2013

ISSN： 0160-8371
First principles approach to C aggregation process during 0th graphene growth on SiC(0001) Peer-reviewed

Inoue Masato, Kageshima Hiroyuki, Kangawa Yoshihiro, Kakimoto Koichi

PHYSICS OF SEMICONDUCTORS　1566　129-130　2013

DOI： 10.1063/1.4848319 　

ISSN： 0094-243X
Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, BING GAO, Yoshihiro KANGAWA, Koichi Kakimoto

INTERNATIONAL JOURNAL OF PHOTOENERGY　706923-1-8　2013

DOI： 10.1155/2013/706923 　
Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace Peer-reviewed

B. Gao, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　352　(1)　47-52　2012/08

DOI： 10.1016/j.jcrysgro.2011.11.084 　

ISSN： 0022-0248
Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　352　(1)　177-180　2012/08

DOI： 10.1016/j.jcrysgro.2012.01.023 　

ISSN： 0022-0248
Numerical analysis of the velocity of SiC growth by the top seeding method Peer-reviewed

F. Inui, B. Gao, S. Nakano, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　348　(1)　71-74　2012/06

DOI： 10.1016/j.jcrysgro.2012.03.036 　

ISSN： 0022-0248
The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals Peer-reviewed

B. Gao, S. Nakano, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　338　(1)　69-74　2012/01

DOI： 10.1016/j.jcrysgro.2011.11.030 　

ISSN： 0022-0248
Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique

TACHIBANA T, SAMESHIMA T, KOJIMA T, ARAFUNE K, KAKIMOTO K, MIYAMURA Y, HARADA H, SEKIGUCHI T, OHSHITA Y, OGURA A

Mater Sci Forum　725　133-136　2012

DOI： 10.4028/www.scientific.net/MSF.725.133 　

ISSN： 0255-5476
Reducing Impurities of Multicrystalline Silicon in a Unidirectional Solidification Furnace for Solar Cells Peer-reviewed

B. Gao, S. Nakano, K. Kakimoto

JOM　63　(10)　43-46　2011/10

ISSN： 1047-4838
Computer modeling of crystal growth of silicon for solar cells Peer-reviewed

Lijun Liu, Xin Liu, Zaoyang Li, Koichi Kakimoto

Frontiers of Energy and Power Engineering in China　5　(3)　305-312　2011/09

DOI： 10.1007/s11708-011-0155-9 　

ISSN： 1673-7393 1673-7504
Thermodynamic analysis of SiC polytype growth by physical vapor transport method Peer-reviewed

K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, Shi-ichi Nishizawa

JOURNAL OF CRYSTAL GROWTH　324　(1)　78-81　2011/06

DOI： 10.1016/j.jcrysgro.2011.03.059 　

ISSN： 0022-0248
Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells Peer-reviewed

S. Nakano, X. J. Chen, B. Gao, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　318　(1)　280-282　2011/03

DOI： 10.1016/j.jcrysgro.2010.11.009 　

ISSN： 0022-0248
3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells Peer-reviewed

X. J. Chen, S. Nakano, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　318　(1)　259-264　2011/03

DOI： 10.1016/j.jcrysgro.2010.10.067 　

ISSN： 0022-0248
Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells Peer-reviewed

Zaoyang Li, Lijun Liu, Wencheng Ma, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　318　(1)　304-312　2011/03

DOI： 10.1016/j.jcrysgro.2010.11.030 　

ISSN： 0022-0248
Effects of argon flow on heat transfer in a directional solidification process for silicon solar cells Peer-reviewed

Zaoyang Li, Lijun Liu, Wencheng Ma, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　318　(1)　298-303　2011/03

DOI： 10.1016/j.jcrysgro.2010.11.040 　

ISSN： 0022-0248
Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace Peer-reviewed

B. Gao, S. Nakano, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　318　(1)　255-258　2011/03

DOI： 10.1016/j.jcrysgro.2010.10.158 　

ISSN： 0022-0248
Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace Peer-reviewed

B. Gao, S. Nakano, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　314　(1)　239-245　2011/01

DOI： 10.1016/j.jcrysgro.2010.12.006 　

ISSN： 0022-0248
Numerical analysis of light elements transport in a unidirectional solidification furnace Peer-reviewed

Koichi Kakimoto, Bing Gao, Satoshi Nakano

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3　8　(3)　2011

DOI： 10.1002/pssc.201000117 　

ISSN： 1862-6351
GaAsN気相エピキタシーにおける混晶組成の理論的検討

川野潤, 寒川義裕, 屋山巴, 伊藤智徳, 柿本浩一, 纐纈明伯

日本結晶成長学会誌　38　128-136　2011

DOI： 10.19009/jjacg.38.2_128 　
半導体バルク結晶成長における熱と物質の輸送と成長速度との関係

柿本浩一, Gao Bing, 中野智, 寒川義裕

日本結晶成長学会誌　38　86-92　2011

DOI： 10.19009/jjacg.38.2_86 　
Calculation of phase diagrams of the Li3N-Al system for AlN growth

T. Yayama, Yoshihiro KANGAWA, Koichi Kakimoto

PHYSICA STATUS SOLIDI C　8　(5)　1581-1584　2011

DOI： 10.1002/pssc.201000888 　
固体原料を用いたAlN溶液成長法に関する研究

寒川義裕, B. M. Eelbaum, 桑野範之, 柿本浩一

日本結晶成長学会誌　38　58-63　2011
Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation Peer-reviewed

B. Gao, X. J. Chen, S. Nakano, S. Nishizawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　312　(22)　3349-3355　2010/11

DOI： 10.1016/j.jcrysgro.2010.08.032 　

ISSN： 0022-0248
Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth Peer-reviewed

B. Gao, K. Kakimoto

Journal of Crystal Growth　312　(20)　2972-2976　2010/10/01

DOI： 10.1016/j.jcrysgro.2010.07.026 　

ISSN： 0022-0248
Comparison and application of several turbulence models in simulation of crystal growth

Xin Liu, Li-Jun Liu, Yuan Wang, K. Kakimoto

Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics　31　(9)　1500-1503　2010/09

ISSN： 0253-231X
Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics Peer-reviewed

Koichi Kakimoto

Crystal Growth Technology: Semiconductors and Dielectrics　65-74　2010/07/19
Publisher: Wiley-VCH
DOI： 10.1002/9783527632879.ch4 　
Marangoni Convection in Crystal Growth Peer-reviewed

Arne Cröll, Taketoshi Hibiya, Suguru Shiratori, Koichi Kakimoto, Lijun Liu

Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone, Shaping and Crucible Techniques　413-464　2010/04/20
Publisher: John Wiley and Sons
DOI： 10.1002/9781444320237.ch7 　
Modeling of the 3D Unsteady Melt Flow in an Industrial-Scale Cz-Si Crystal Growth Using LES Method Peer-reviewed

Xin Liu, Lijun Liu, Yuan Wang, Koichi Kakimoto

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010)　27　(1)　1035-1039　2010

DOI： 10.1149/1.3360747 　

ISSN： 1938-5862

eISSN： 1938-6737
Development and Application of a Structured/Unstructured Combined Mesh Scheme for Global Modeling of a Directional Solidification Process of Silicon Peer-reviewed

Zaoyang Li, Lijun Liu, Koichi Kakimoto

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010)　27　(1)　1047-1052　2010

DOI： 10.1149/1.3360749 　

ISSN： 1938-5862
Global Simulation of Coupled Carbon and Oxygen Transport in a Unidirectional Solidification Furnace for Solar Cells Peer-reviewed

B. Gao, S. Nakano, K. Kakimoto

JOURNAL OF THE ELECTROCHEMICAL SOCIETY　157　(2)　H153-H159　2010

DOI： 10.1149/1.3262584 　

ISSN： 0013-4651
Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations Peer-reviewed

X. J. Chen, S. Nakano, L. J. Liu, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　312　(2)　192-197　2010/01

DOI： 10.1016/j.jcrysgro.2009.10.035 　

ISSN： 0022-0248
Numerical Analysis of Oxygen and Carbon Transport in a Unidirectional Solidification Furnace Peer-reviewed

B. Gao, K. Kakimoto, S. Nakano

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010)　27　(1)　1015-1020　2010

DOI： 10.1149/1.3360744 　

ISSN： 1938-5862
Numerical Analysis of Oxygen and Carbon Transport in a Unidirectional Solidification Furnace Peer-reviewed

B. Gao, K. Kakimoto, S. Nakano

PHOTOVOLTAICS FOR THE 21ST CENTURY 5　25　(15)　19-24　2010

ISSN： 1938-5862
Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8　7　(7-8)　2249-2251　2010

DOI： 10.1002/pssc.200983475 　

ISSN： 1862-6351
Theoretical approach to structural stability of GaN: How to grow cubic GaN

Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

Journal of Crystal Growth　311　3106-3109　2009/05/01

DOI： 10.1016/j.jcrysgro.2009.01.117 　

ISSN： 0022-0248
Effect of precipitates on formation of small grain in multicrystalline silicon for solar cells

Reports of Research Institute for Applied Mechanics,Kyushu University　(136)　39-44　2009/03
Publisher:
DOI： 10.15017/27051 　

ISSN： 1345-5664
Effect of crucible rotation on oxygen concentration in the polycrystalline silicon grown by the unidirectional solidification method Peer-reviewed

S. Nakano, L. J. Liu, X. J. Chen, H. Matsuo, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　311　(4)　1051-1055　2009/02

DOI： 10.1016/j.jcrysgro.2008.12.020 　

ISSN： 0022-0248
Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE Peer-reviewed

Kangawa Yoshihiro, Kakimoto Koichi, Ito Tomonori, Koukitu Akinori

JOURNAL OF CRYSTAL GROWTH　311　(3)　463-465　2009/01/15

DOI： 10.1016/j.jcrysgro.2008.09.014 　

ISSN： 0022-0248
Distributions of light elements and their precipitations grown by unidirectional solidification method in multicrystalline silicon for solar cells Peer-reviewed

H. Matsuo, S. Hisamatsu, Y. Kangawa, K. Kakimoto

ECS Transactions　18　(1)　1037-1042　2009

DOI： 10.1149/1.3096569 　

ISSN： 1938-5862 1938-6737
Prediction of melt-crystal interface shape and melt convection in a large-scale CZ-Si growth system using RANS and LES methods in global simulation Peer-reviewed

Xin Liu, Lijun Liu, Zaoyang Li, Yuan Wang, Koichi Kakimoto

ECS Transactions　18　(1)　983-988　2009

DOI： 10.1149/1.3096561 　

ISSN： 1938-5862 1938-6737
Optical charaterization of Ag/Ga composition ratio in AgGaSe2 thin film Peer-reviewed

Hitoshi Matsuo, Takahiro Tokuda, Kenji Yoshino, Aya Kinoshita, Tetsuo Ikari, Koichi Kakimoto, Satoru Seto

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5　6　(5)　1070-+　2009

DOI： 10.1002/pssc.200881138 　

ISSN： 1862-6351
Modeling and simulation of Si crystal growth from melt Peer-reviewed

Lijun Liu, Hiroaki Miyazawa, Satoshi Nakano, Xin Liu, Zaoyang Li, Koichi Kakimoto

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3　6　(3)　645-+　2009

DOI： 10.1002/pssc.200880705 　

ISSN： 1862-6351
Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source

Y. Kangawa, T. Nagano, K. Kakimoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2　6　S340-S343　2009

DOI： 10.1002/pssc.200880910 　

ISSN： 1862-6351
Heat and impurity transfer mechanisms of Czochralski and directional solidification processes

K. Kakimoto, X. J. Chen, L. J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu, Y. Kangawa

ECS Transactions　18　(1)　925-933　2009

DOI： 10.1149/1.3096556 　
Influence of compositional changes of source materials on AlN synthesis using Li-Al-N solvent

T. Nagano, Y. Kangawa, K. Kakimoto

PHYSICA STATUS SOLIDI C　6　S336-S339　2009

DOI： 10.1002/pssc.200880908 　
Numerical Analysis of mc-Si Crystal Growth

K. Kakimoto, H. Matsuo, S. Hisamatsu, B. Ganesh, B. Gao, X. J. Chen, L. J. Liu, Y. Kangawa

Solid State Phenomena　156-158　193-198　2009

DOI： 10.4028/www.scientific.net/SSP.156-158.193 　
Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth Peer-reviewed

Koichi Kakimoto, Lijun Liu

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production　195-204　2008/11/25
Publisher: Wiley-VCH Verlag GmbH & Co. KGaA
DOI： 10.1002/9783527623440.ch7 　
Study on thermal stress in a silicon ingot during a unidirectional solidification process Peer-reviewed

X. J. Chen, S. Nakano, L. J. Liu, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(19)　4330-4335　2008/09

DOI： 10.1016/j.jcrysgro.2008.07.027 　

ISSN： 0022-0248
Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells Peer-reviewed

Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(7-9)　2204-2208　2008/04

DOI： 10.1016/j.jcrysgro.2007.12.017 　

ISSN： 0022-0248
Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells Peer-reviewed

Lijun Liu, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(7-9)　2192-2197　2008/04

DOI： 10.1016/j.jcrysgro.2007.11.165 　

ISSN： 0022-0248
Global analysis of GaN growth using a solution technique

D. Kashiwagi, R. Gejo, Y. Kangawa, L. Liu, F. Kawamura, Y. Mori, T. Sasaki, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(7-9)　1790-1793　2008/04

DOI： 10.1016/j.jcrysgro.2007.10.061 　

ISSN： 0022-0248
Theoretical Analyses on Growth Conditions of Cubic GaN(<Special Issue> Stable or Metastable: Zinc Blende and Wurtzite Structures)

Kangawa Yoshihiro, Akiyama Toru, Ito Tomonori, Shiraishi Kenji, Kakimoto Koichi

Journal of the Japanese Association of Crystal Growth　34　(4)　213-217　2008/01/31
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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We investigated the growth conditions of cubic GaN (c-GaN) by ab initio based approach which incorporates free energy of vapor phase. It is known that a c-GaN is a meta-stable phase and wurtzite GaN (h-GaN), which is a stable phase of GaN, is easily incorporated in the c-GaN crystal during growth. h-GaN is formed in the area grown on {111} facet plane. In the present study, therefore, we studied the growth conditions of {111} facet formation in order to clarify the conditions of h-GaN incorporation. The results suggest that we can suppress the {111} facet formation, i.e., h-GaN mixing, by c...
Investigation of the thermal conductivity of a fullerene peapod by molecular dynamics simulation

T. Kawamura, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　2301-2305　2008

DOI： 10.1016/j.jcrysgro.2007.11.041 　
Numerical investigation of crystal growth process of bulk Si and nitrides

K. Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X. J. Chen, Y. Kangawa

CRYSTAL RESEARCH AND TECHNOLOGY　42　(12)　1185-1189　2007/12

DOI： 10.1002/crat.200711004 　

ISSN： 0232-1300
Ab initio-based approach to initial growth process of cubic gallium nitride

Reports of Research Institute for Applied Mechanics,Kyushu University　(133)　135-138　2007/09
Publisher:
DOI： 10.15017/26841 　

ISSN： 1345-5664
Three-dimensional global modeling of a unidirectional solidification furnace with square crucibles Peer-reviewed

Lijun Liu, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　303　(1)　165-169　2007/05

DOI： 10.1016/j.jcrysgro.2006.11.274 　

ISSN： 0022-0248
Partly three-dimensional calculation of silicon Czochralski growth with a transverse magnetic field Peer-reviewed

Koichi Kakimoto, Lijun Liu

JOURNAL OF CRYSTAL GROWTH　303　(1)　135-140　2007/05

DOI： 10.1016/j.jcrysgro.2006.11.152 　

ISSN： 0022-0248
Ab initio-based approach on initial growth kinetics of GaN on GaN (001)

Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　301　75-78　2007/04

DOI： 10.1016/j.jcrysgro.2006.11.110 　

ISSN： 0022-0248

eISSN： 1873-5002
Analysis of temperature distribution while growing multi-crystalline silicon in a casting method with multi heater system

Reports of Research Institute for Applied Mechanics,Kyushu University　(132)　27-36　2007/03
Publisher:
DOI： 10.15017/26826 　

ISSN： 1345-5664
Investigation of thermal conductivity of functional materials by molecular dynamics

Reports of Research Institute for Applied Mechanics,Kyushu University　(132)　21-26　2007/03
Publisher:
DOI： 10.15017/26825 　

ISSN： 1345-5664
Theoretical approach to initial growth kinetics of GaN on GaN(001)

Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH　300　(1)　62-65　2007/03

DOI： 10.1016/j.jcrysgro.2006.10.203 　

ISSN： 0022-0248

eISSN： 1873-5002
An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulation

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　298　251-253　2007/01

DOI： 10.1016/j.jcrsgro.2006.10.025 　

ISSN： 0022-0248
Molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dot superlattices

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007　4　(7)　2289-+　2007

DOI： 10.1002/pssc.200674784 　

ISSN： 1862-6351
InGaN混晶半導体における原子配列の理論的検討

寒川義裕, 柿本浩一, 伊藤智徳, 纐纈明伯

応用物理　76　495-498　2007
c-GaN分子線エピタキシーにおける成長初期過程の理論解析

寒川義裕, 松尾有里子, 秋山亨, 伊藤智徳, 白石賢二, 柿本浩一

クリスタルレターズ　36　44-48　2007
Enhanced diffusion of boron in silicon by cw CO2 laser irradiation Peer-reviewed

H. Yamada-Kaneta, K. Tanahashi, K. Kakimoto, S. Suto

SURFACE AND INTERFACE ANALYSIS　38　(12-13)　1683-1686　2006/12

DOI： 10.1002/sia.2411 　

ISSN： 0142-2421
01aB11 Theoretical investigation of initial growth process of GaN on GaN(001)(NCCG-36)

Journal of the Japanese Association of Crystal Growth　33　(4)　207-207　2006/11/01
Publisher: The Japanese Association for Crystal Growth (JACG)
DOI： 10.19009/jjacg.33.4_207 　

ISSN： 0385-6275

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We carried out theoretical analyses based on the ab initio calculations incorporates free energy of vapor phase in order to find the initial growth process of cubic GaN in GaN(001)-(4x1). The results suggest that N attached structure appears at the initial growth stage, and then Ga adsorbs on the N attached GaN(001)-(4x1) surface. Considering these process, we performed Monte Carlo simulations. The results imply that maximum point of Ga coverage after 1/32 monolayer supply shifted toward Ga-rich condition from V/III=1.0.
Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements Peer-reviewed

Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　134　(2-3)　233-239　2006/10

DOI： 10.1016/j.mseb.2006.07.038 　

ISSN： 0921-5107
Analysis of temperature and impurity distributions in a unidirectional-solidification process for multi-crystalline silicon of solar cells by a global model Peer-reviewed

Koichi Kakimoto, Lijun Liu, Satoshi Nakano

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　134　(2-3)　269-272　2006/10

DOI： 10.1016/j.mseb.2006.06.040 　

ISSN： 0921-5107
Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model Peer-reviewed

Lijun Liu, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　292　(2)　515-518　2006/07

DOI： 10.1016/j.jcrysgro.2006.04.060 　

ISSN： 0022-0248
Analysis of temperature distribution in multi-crystalline silicon of a casting method with multi heater system

Reports of Research Institute for Applied Mechanics,Kyushu University　(130)　21-27　2006/03
Publisher:
DOI： 10.15017/26813 　

ISSN： 1345-5664
Growth of AgGaSe2 crystals by hot-press method Peer-reviewed

A. Kinoshita, H. Matsuo, K. Yoshino, T. Ikari, K. Kakimoto

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8　3　(8)　2903-+　2006

DOI： 10.1002/pssc.200669513 　

ISSN： 1862-6351
Investigation of thermal conductivity of nitride mixed crystals and superlattices by molecular dynamics

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6　3　(6)　1695-1699　2006

DOI： 10.1002/pssc.200565107 　

ISSN： 1862-6351
Thermodynamic stability of In1-x-yGaxAlyN on GaN and InN

Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu

Physica Status Solidi C　3　(6)　1700-1703　2006

DOI： 10.1002/pssc.200565106 　
Silicon crystal growth from the melt: Analysis from atomic and macro scales Peer-reviewed

K. Kakimoto, L. Liu, T. Kitashima, A. Murakawa, Y. Hashimoto

Crystal Research and Technology　40　(4-5)　307-312　2005/04

DOI： 10.1002/crat.200410343 　

ISSN： 0232-1300
3D global analysis of CZ-Si growth in a transverse magnetic field with rotating crucible and crystal Peer-reviewed

LJ Liu, K Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY　40　(4-5)　347-351　2005/04

DOI： 10.1002/crat.200410349 　

ISSN： 0232-1300
Analysis of thermal conductivity of isotope germanium by molecular dynamics

ISHII Hideo, MURAKAWA Atsushi, KAKIMOTO Koichi

Reports of Research Institute for Applied Mechanics, Kyushu University　128　53-58　2005/03
Publisher: Kyushu University
DOI： 10.15017/3563 　

ISSN： 1345-5664

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Thermal conductivity of solid germanium as a function of the mole fraction of isotopes was investigated by equilibrium molecular dynamics. We employed the molecular dynamics based on Green-Kubo's formula in which the autocorrelation function of heat flux was integrated as a function of duration time. The results of calculation showed that thermal conductivity of mixed isotope-germanium is smaller than that of pure isotope germanium, which is similar to silicon case. The results also showed that thermal conductivity of two-mixed isotope-germanium is a function of the difference of two masses.
Global analysis of effects of magnetic field configuration on melt-crystal interface shape and melt flow in CZ-Si crystal growth Peer-reviewed

Lijun Liu, Tomonori Kitashima, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　275　(1-2)　E2135-E2139　2005/02

DOI： 10.1016/j.jcrysgro.2004.11.292 　

ISSN： 0022-0248
3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates Peer-reviewed

Lijun Liu, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　275　(1-2)　E1521-E1526　2005/02

DOI： 10.1016/j.jcrysgro.2004.11.185 　

ISSN： 0022-0248
Numerical Analysis of a TMCZ Silicon Growth Furnace by Using a 3D Global Model

LIU Lijun, KAKIMOTO Koichi

Reports of Research Institute for Applied Mechanics, Kyushu University　127　39-47　2004/09
Publisher: Kyushu University
DOI： 10.15017/3551 　

ISSN： 1345-5664

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Three-dimensional (3D) global simulations were carried out for a small Czochralski (CZ) furnace for silicon crystal growth with a recently developed global model. The furnace is placed in a transverse magnetic field. The convective, conductive and radiative heat transfers in the entire furnace were solved in a three-dimensionally conjugated way. Three-dimensional features of the melt flow and thermal field in the furnace due to the influence of a transverse magnetic field were reasonably reproduced in the modeling for cases in which the crystal and crucible are rotating or are not rotating. The effects of crystal and crucible rotations on the melt-crystal interface shape and the 3D thermal field within the furnace were analyzed. The model was proved to be an effective and powerful tool for analyzing a silicon CZ furnace characterized with three-dimensionality.
Modeling of Fluid Dynamics in the Czochralski Growth of Semiconductor Crystals Peer-reviewed

Koichi Kakimoto

Crystal Growth - From Fundamentals to Technology　169-186　2004/07/07
Publisher: Elsevier Inc.
DOI： 10.1016/B978-044451386-1/50009-X 　
Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation technique Peer-reviewed

T Kitashima, LJ Liu, K Kitamura, K Kakimoto

JOURNAL OF CRYSTAL GROWTH　267　(3-4)　574-582　2004/07

DOI： 10.1016/j.jcrysgro.2004.04.026 　

ISSN： 0022-0248
Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique Peer-reviewed

Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto

Journal of Crystal Growth　266　(1-3)　109-116　2004/05/15

DOI： 10.1016/j.jcrysgro.2004.02.036 　

ISSN： 0022-0248
Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification Peer-reviewed

LJ Liu, K Kakimoto, T Taishi, K Hoshikawa

JOURNAL OF CRYSTAL GROWTH　265　(3-4)　399-409　2004/05

DOI： 10.1016/j.jcrysgro.2004.02.077 　

ISSN： 0022-0248
Mixing mechanism of the supplied raw material and effects of the raw material on melt temperature in a double-crucible Czochralski system using the accelerated crucible rotation technique

KITASHIMA Tomonori, LIU Lijun, HASHIMOTO Yoshio, KAKIMOTO Koichi

Reports of Research Institute for Applied Mechanics, Kyushu University　126　41-46　2004/03
Publisher: Kyushu University
DOI： 10.15017/3545 　

ISSN： 1345-5664

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The transport-mechanism of supplied raw material in a double-crucible Czochralski. system using the accelerated crucible rotation technique (ACRT) was investigated by three-dimensional and time-dependent numerical simulation. The calculation clarified that use of the ACRT resulted in enhancement of the mixing effect of the supplied raw material. It is therefore possible to maintain the composition of the melt in an inner crucible during crystal growth by using the ACRT. The effect of the continuous charge of the raw material on melt temperature was also investigated. Our results showed that the effect of feeding lithium niobate granules on melt temperature was small, since the feeding rate of the granules is small. Therefore, solidification of the melt surface due to the heat effusion in this system is not likely.
Numerical analysis of effects of crystal and crucible rotations on melt-crystal interface shape and melt flow in CZ growth by global simulation

Lijun Liu, Tomonori Kitashima, Koichi Kakimoto

Rare Metals　22　12-19　2003/12

ISSN： 1001-0521
Numerical study of the effect of magnetic fields on melt-crystal interface-deflection in Czochralski crystal growth

Lijun Liu, Koichi Kakimoto

Proceedings of the ASME Summer Heat Transfer Conference　2003　343-351　2003
Publisher: American Society of Mechanical Engineers
DOI： 10.1115/ht2003-47534 　
Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth Peer-reviewed

K Kakimoto, LJ Liu

CRYSTAL RESEARCH AND TECHNOLOGY　38　(7-8)　716-725　2003

DOI： 10.1002/crat.200310086 　

ISSN： 0232-1300
Three-dimensional numerical simulation of spoke pattern in bridgman top seeding convection Peer-reviewed

JS Szmyd, M Jaszczur, H Ozoe, K Kakimoto

CHT'01: ADVANCES IN COMPUTATIONAL HEAT TRANSFER II, VOLS 1 AND 2, PROCEEDINGS　929-936　2001
Seebeck Effect on Melt Convection during Semiconductor Crystal Growth by Solution Technique

HIRATA Manabu, KAKIMOTO Koichi, OZOE Hiroyuki

The reports of Institute of Advanced Material Study Kyushu University　14　(2)　149-155　2000/12/25
Publisher: Kyushu University
DOI： 10.15017/7927 　

ISSN： 0914-3793

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We studied the Seebeck effect on the convection of a solution during crystal growth by two-dimensional and time-dependent calculation of heat and mass transfer. We clarified that an electric current, which flows in the electrically conducting wall of a crucible, enhanced the radial flow in the solution. The electric current is mainly based on the Seebeck effect, which originates from the temperature gradient in the solution and the crucible. Exact values of the Seebeck coefficient for the solution and the crucible are required to obtain more quantitative results.
The convection under an axial magnetic field in a Czochralski configuration Peer-reviewed

H Fukui, K Kakimoto, H Ozoe

ADVANCED COMPUTATIONAL METHODS IN HEAT TRANSFER V　135-144　1998

ISSN： 1462-6063
Bubble formation in silicon-quartz interface Peer-reviewed

K Kakimoto, M Eguchi, H Ozoe

SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY　43　(1)　47-49　1997/03

ISSN： 0040-8808
Oxygen transport mechanism in Si melt during single crystal growth in the Czochralski system Peer-reviewed

KW Yi, K Kakimoto, M Eguchi, H Noguchi

JOURNAL OF CRYSTAL GROWTH　165　(4)　358-361　1996/08

ISSN： 0022-0248
Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields Peer-reviewed

K Kakimoto, KW Yi, M Eguchi

JOURNAL OF CRYSTAL GROWTH　163　(3)　238-242　1996/06

ISSN： 0022-0248
STRUCTURE OF TEMPERATURE AND VELOCITY-FIELDS IN THE SI MELT OF A CZOCHRALKSI CRYSTAL-GROWTH SYSTEM Peer-reviewed

KW YI, VB BOOKER, M EGUCHI, T SHYO, K KAKIMOTO

JOURNAL OF CRYSTAL GROWTH　156　(4)　383-392　1995/12

ISSN： 0022-0248
CORRELATION BETWEEN TEMPERATURE AND IMPURITY CONCENTRATION FLUCTUATIONS IN SILICON-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD Peer-reviewed

K KAKIMOTO, T SHYO, M EGUCHI

JOURNAL OF CRYSTAL GROWTH　151　(1-2)　187-191　1995/05

ISSN： 0022-0248
Flow instability of molten silicon during crystal growth(Industrial Materials)

Kakimoto Koichi

Bulletin of the Japan Society for Industrial and Applied Mathematics　5　(3)　236-244　1995
Publisher: The Japan Society for Industrial and Applied Mathematics
DOI： 10.11540/bjsiam.5.3_236 　

ISSN： 0917-2270
Marangoni Effect in Material Engineering. Marangoni Effect in Silicon Single Crystal Growth Process.

Kakimoto Koichi

Bulletin of the Japan Institute of Metals　34　(4)　420-425　1995
Publisher: The Japan Institute of Metals and Materials
DOI： 10.2320/materia.34.420 　

ISSN： 1340-2625
Molecular Dynamics Simulation of Molten Silicon.

Kakimoto Koichi

Jpn. J. Thermophys. Prop.　8　(4)　220-225　1994
Publisher: JAPAN SOCIETY OF THERMOPHYSICAL PROPERTIES
DOI： 10.2963/jjtp.8.220 　

ISSN： 0913-946X

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Molecular dynamics simulation by using NPT algorithm was performed to estimate selfdiffusion constant of molten silicon. The estimated value shows monotonous increase with increase in temperature. Absolute value of the constant is estimated to be about 1×10^-4cm²/s. More than one thousand of atoms are requested to obtain macroscopic thermophysical properties.
3-DIMENSIONAL ANALYSIS OF MOLTEN SILICON FLOW IN SILICON SINGLE-CRYSTAL GROWTH Peer-reviewed

K KAKIMOTO, M WATANABE, M EGUCHI, T HIBIYA

NEC RESEARCH & DEVELOPMENT　33　(4)　554-567　1992/10

ISSN： 0547-051X
AN EXTRAPOLATION METHOD FOR APPROXIMATING MELT CONVECTION IN A CZOCHRALSKI FURNACE Peer-reviewed

M LECOMTE, K KAKIMOTO, F DUPRET

CRYSTAL GROWTH, PTS 1 AND 2　B635-B645　1991
DIRECT OBSERVATION BY X-RAY RADIOGRAPHY OF CONVECTION OF BORIC OXIDE IN THE GAAS LIQUID ENCAPSULATED CZOCHRALSKI GROWTH Peer-reviewed

K KAKIMOTO, M EGUCHI, H WATANABE, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　94　(2)　405-411　1989/02

ISSN： 0022-0248
Direct observation of melt convection of silicon by X-ray radiography.

KAKIMOTO Koichi, EGUCHI Minoru, WATANABE Hisao, HIBIYA Taketoshi

Journal of the Visualization Society of Japan　8　(30)　147-150　1988
Publisher: THE VISUALIZATION SOCIETY OF JAPAN
DOI： 10.3154/jvs1981.8.147 　

ISSN： 0287-3605

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Natural and Forced convection of molten silicon during Czochralski single crystal growth was directly observed using X-ray radiography and solid tracer method. The tracer, whose density and wettability were adjusted to that of molten silicon, was newly developed. Observed flow of natural convection of molten silicon in a crucible was not only steady but also transient, and not axisymmetric but asymmetric.

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Misc. 330

縦型結晶成長装置におけるGaN MOVPEシミュレーション

富澤巧, 川上賢人, 櫻井照夫, 草場彰, 岡本直也, 芳松克則, 醍醐佳明, 水島一郎, 水島一郎, 依田孝, 依田孝, 寒川義裕, 柿本浩一, 白石賢二

応用物理学会春季学術講演会講演予稿集(CD-ROM)　66th　ROMBUNNO.10p‐W541‐18　2019/02/25

ISSN： 2436-7613
Thermodynamic analysis of III-nitride MOVPE: Invited Peer-reviewed

Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Kakimoto Koichi, Koukitu Akinori

Journal of the Japanese Association for Crystal Growth　43　(4)　233-238　2017/08/23
Publisher: The Japanese Association for Crystal Growth
DOI： 10.19009/jjacg.43.4_233 　

ISSN： 2188-7268

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<p> It is known that the growth process of semiconductors depends on the growth conditions such as temperature, partial pressures of gaseous sources, and growth orientation. However, there has been little study of the relation between the growth process and the growth conditions. In 2001, we developed an ab initio based-approach that incorporates gas-phase free energy. Using the theoretical approach, we can discuss the influence of the growth conditions on the stability of surface reconstruction. In this research, we propose a newly improved thermodynamic analysis that incorporates surface energies obtained by ab initio calculations. The theoretical approach was applied to study the growth processes of InN(0001), (000-1), (10-10) and (11-20) by MOVPE. Calculation results reproduced the difference in optimum growth temperature.</p>
Silicon bulk growth for solar cells: Science and technology

Koichi Kakimoto, Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura

JAPANESE JOURNAL OF APPLIED PHYSICS　56　(2)　2017/02

DOI： 10.7567/JJAP.56.020101 　

ISSN： 0021-4922

eISSN： 1347-4065
Recent developments of numerical calculation in crystal growth of SiC

Koichi Kakimoto, Satoshi Nakano

Journal of the Vacuum Society of Japan　60　(8)　313-320　2017
Publisher: Vacuum Society of Japan
DOI： 10.3131/jvsj2.60.313 　

ISSN： 1882-2398
第16回結晶成長国際サマースクール(ISSCG-16)報告 (第18回結晶成長国際会議(ICCGE-18) 第16回結晶成長国際サマースクール(ISSGE-16)特別号)

佐﨑元, 灘浩樹, 成塚重弥, 長嶋剣, 川野潤, 大鉢忠, 柿本浩一

日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth　43　(5)　277-284　2016
Publisher: 日本結晶成長学会
ISSN： 0385-6275
Development of In-situ Observation System for Growth Process of AlN by Solution Growth

Kangawa Yoshihiro, Miyake Hideto, Bockowski Michal, Kakimoto Koichi

Journal of the Japanese Association of Crystal Growth　42　(3)　232-237　2015
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 2188-7268

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It is known that lateral growth of semiconductors is important to bend and annihilate threading dislocations during epitaxial growth. In order to understand the initial growth process of AlN during solid source solution growth, we developed in-situ observation system for high-temperature liquid/solid interfaces. In this study, we used transparent substrate, i.e., AlN/sapphire template, so as to observe high-temperature liquid/solid interfaces through the substrate from the bottom. Though a polycrystal formed because of melt-back etching during the initial stage of growth; nevertheless, initial growth process was successfully observed by the in-situ observation system. This in-situ observation system could be a powerful tool for investigating interfacial phenomena at high-temperature liquid/solid interfaces and optimizing crystal growth conditions.
Thermal stress induced dislocation distribution in directional solidification of Si for PV application

Karolin Jiptner, Bing Gao, Hirofumi Harada, Yoshiji Miyamura, Masayuki Fukuzawa, Koichi Kakimoto, Takashi Sekiguchi

JOURNAL OF CRYSTAL GROWTH　408　19-24　2014/12

DOI： 10.1016/j.jcrysgro.2014.09.017 　

ISSN： 0022-0248

eISSN： 1873-5002
Numerical Investigation of Carbon and Silicon Carbide Contamination during the Melting Process of Czochralski Silicon Crystal Growth

LIU XIN, GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

結晶成長国内会議予稿集(CD-ROM)　44th　ROMBUNNO.06PS05　2014/11/06

ISSN： 0385-6275
Potential and limitation of three-dimensional Alexander-Haasen model in analyzing dislocation in single-crystal

GAO BING, KAROLIN JIPTNER, NAKANO SATOSHI, HARADA HIROFUMI, MIYAMURA YOSHIJI, SEKIGUCHI TAKASHI, KAKIMOTO KOICHI

結晶成長国内会議予稿集(CD-ROM)　44th　ROMBUNNO.08AB02　2014/11/06

ISSN： 0385-6275
Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Yoshihiro Kangawa, Tomonori Ito, Akinori Koukitu, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(10)　100202.1-100202.11　2014/10

DOI： 10.7567/JJAP.53.100202 　

ISSN： 0021-4922

eISSN： 1347-4065
Effects of Argon Flow on Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth

LIU XIN, GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　75th　ROMBUNNO.18P-A25-5　2014/09/01
Role of the Surface N-H Molecular Layer in High Quality In-RICH InGaN Growth by MOVPE

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN　47　(7)　615-619　2014/07

DOI： 10.1252/jcej.13we309 　

ISSN： 0021-9592
Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001) and (000(1)over-bar)

Ryosuke Iguchi, Takahiro Kawamura, Yasuyuki Suzuki, Masato Inoue, Yoshihiro Kangawa, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(6)　065601.1-065601.4　2014/06

DOI： 10.7567/JJAP.53.065601 　

ISSN： 0021-4922

eISSN： 1347-4065
Molecular beam epitaxy growth of GaN under Ga-rich conditions investigated by molecular dynamics simulation

Takahiro Kawamura, Hiroya Hayashi, Takafumi Miki, Yasuyuki Suzuki, Yoshihiro Kangawa, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　53　(5)　05FL08.1-05FL08.5　2014/05

DOI： 10.7567/JJAP.53.05FL08 　

ISSN： 0021-4922

eISSN： 1347-4065
Thermo-physical properties of Cu2ZnSnS4 single crystal

Akira Nagaoka, Kenji Yoshino, Kenta Aoyagi, Takashi Minemoto, Yoshitaro Nose, Tomoyasu Taniyama, Koichi Kakimoto, Hideto Miyake

JOURNAL OF CRYSTAL GROWTH　393　167-170　2014/05

DOI： 10.1016/j.jcrysgro.2013.11.077 　

ISSN： 0022-0248

eISSN： 1873-5002
Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal

Akira Nagaoka, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto, Yoshitaro Nose, Michael A. Scarpulla, Kenji Yoshino

APPLIED PHYSICS LETTERS　104　(15)　152101-152101-4　2014/04

DOI： 10.1063/1.4871208 　

ISSN： 0003-6951

eISSN： 1077-3118
Numerical Investigation of the Melting Process Including Carbon Contamination in a CZ-Si Crystal Growth

LIU XIN, GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

応用物理学会春季学術講演会講演予稿集(CD-ROM)　61st　ROMBUNNO.18A-D3-12　2014/03/03
Thermal-stress induced dislocation distribution in seed-cast and CZ Si ingots

JIPTNER KAROLIN, GAO BING, MIYAMURA YOSHIJI, HARADA HIROFUMI, KAKIMOTO KOICHI, SEKIGUCHI TAKASHI

応用物理学会春季学術講演会講演予稿集(CD-ROM)　61st　ROMBUNNO.19P-E12-3　2014/03/03
Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Bing Gao, Koichi Kakimoto

CRYSTAL GROWTH & DESIGN　14　(3)　1272-1278　2014/03

DOI： 10.1021/cg401789g 　

ISSN： 1528-7483

eISSN： 1528-7505
Growth and characterization of Cu2ZnSn(SxSe1-x)(4) alloys grown by the melting method

Akira Nagaoka, Kenji Yoshino, Hiroki Taniguchi, Tomoyasu Taniyama, Koichi Kakimoto, Hideto Miyake

JOURNAL OF CRYSTAL GROWTH　386　204-207　2014/01

DOI： 10.1016/j.jcrysgro.2013.10.001 　

ISSN： 0022-0248

eISSN： 1873-5002
Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the [001] and [111] directions

Bing Gao, Koichi Kakimoto

JOURNAL OF APPLIED CRYSTALLOGRAPHY　46　(6)　1771-1780　2013/12

DOI： 10.1107/S002188981302517X 　

ISSN： 0021-8898

eISSN： 1600-5767
Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Akira Nagaoka, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto, Kenji Yoshino

APPLIED PHYSICS LETTERS　103　(11)　112107-112107-4　2013/09

DOI： 10.1063/1.4821279 　

ISSN： 0003-6951

eISSN： 1077-3118
InSb mid-infrared photon detector for room-temperature operation

Koichiro Ueno, Edson Gomes Camargo, Takashi Katsumata, Hiromasa Goto, Naohiro Kuze, Yoshihiro Kangawa, Koichi Kakimoto

Japanese Journal of Applied Physics　52　(9)　092202.1-092202.6　2013/09

DOI： 10.7567/JJAP.52.092202 　

ISSN： 0021-4922 1347-4065
Prediction of Argon Flow and Impurity Transport in a CZ-Si Crystal Growth with Different Gas Flow Solvers

LIU XIN, GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　74th　ROMBUNNO.16A-B3-1　2013/08/31
Influence of cooling flux on the generation of dislocations for cylindrical single crystal silicon by numerical modeling

GAO B, NAKANO S, HARADA H, MIYAMURA Y, SEKIGUCHI T, KAKIMOTO KOICHI

応用物理学会秋季学術講演会講演予稿集(CD-ROM)　74th　ROMBUNNO.16P-A4-4　2013/08/31
Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells

Jianyong Li, Ronit Roneel Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Atsushi Ogura, Takashi Sekiguchi

JOURNAL OF CRYSTAL GROWTH　377　37-42　2013/08

DOI： 10.1016/j.jcrysgro.2013.03.051 　

ISSN： 0022-0248
Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal-Organic Vapor Phase Epitaxy

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　52　(8)　08JC02.1-08JC02.3　2013/08

DOI： 10.7567/JJAP.52.08JC02 　

ISSN： 0021-4922
Growth and characterization of Cu2ZnSnS4 single crystals

Akira Nagaoka, Kenji Yoshino, Hiroki Taniguchi, Tomoyasu Taniyama, Koichi Kakimoto, Hideto Miyake

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　210　(7)　1328-1331　2013/07

DOI： 10.1002/pssa.201200815 　

ISSN： 1862-6300

eISSN： 1862-6319
Opening Up a New World of Crystal Growth on SiC

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　40　(1)　4-4　2013/04/30
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Opening Up a New World of Crystal Growth on SiC Effect of the Inclusion of Transparency on the Thermal Field and Interface Shape in Long-term Sublimation Growth of SiC Crystals

GAO BING, KAKIMOTO KOICHI

日本結晶成長学会誌　40　(1)　20-24　2013/04

DOI： 10.19009/jjacg.40.1_20 　

ISSN： 0385-6275
Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources

Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Koichi Kakimoto, Akinori Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS　52　(4)　045601.1-045601.5　2013/04

DOI： 10.7567/JJAP.52.045601 　

ISSN： 0021-4922

eISSN： 1347-4065
Characterization of residual strain in seed-cast grown Si

JIPTNER KAROLIN, FUKUZAWA MASAYUKI, MIYAMURA YOSHIJI, HARADA HIROFUMI, KAKIMOTO KOICHI, SEKIGUCHI TAKASHI

応用物理学会春季学術講演会講演予稿集(CD-ROM)　60th　ROMBUNNO.30A-A4-3　2013/03/11
Relationship between cooling rate and activation of different slip system under [001] and [111] growth for multicrystalline silicon growth for solar cell

GAO B, NAKANO S, HARADA H, MIYAMURA Y, SEKIGUCHI T, KAKIMOTO KOICHI

応用物理学会春季学術講演会講演予稿集(CD-ROM)　60th　ROMBUNNO.30A-A4-4　2013/03/11
Reduction of Oxygen Impurity in Multicrystalline Silicon Production

Bing Gao, Satoshi Nakano, Koichi Kakimoto

INTERNATIONAL JOURNAL OF PHOTOENERGY　2013

DOI： 10.1155/2013/908786 　

ISSN： 1110-662X
The 42th National Conference on Crystal Growth (NCCG-42)(News of JACG)

Journal of the Japanese Association for Crystal Growth　39　(4)　220-225　2013
Publisher: The Japanese Association for Crystal Growth
DOI： 10.19009/jjacg.39.4_220 　

ISSN： 0385-6275
Structural control of C clustering at SiC(0001) steps

INOUE MASATO, KANGAWA YOSHIHIRO, KAGESHIMA HIROYUKI, KAKIMOTO KOICHI

Abstr JSAP MRS Jt Symp (CD-ROM)　ROMBUNNO.17P-PM1-5　2013
Investigation of Growth Process of MBE Growth of GaN under Ga-rich Conditions by Molecular Dynamics

KAWAMURA TAKAHIRO, HAYASHI HIROYA, AMEKAWA MASAHIRO, SUZUKI YASUYUKI, KANGAWA YOSHIHIRO, KAKIMOTO KOICHI

Abstr JSAP MRS Jt Symp (CD-ROM)　ROMBUNNO.18P-M6-7　2013
The orientation dependence of In incorporation of InGaN: The role of N-H layer

YAYAMA TOMOE, KANGAWA YOSHIHIRO, KAKIMOTO KOICHI

Abstr JSAP MRS Jt Symp (CD-ROM)　ROMBUNNO.16P-PM1-19　2013
Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth

GAO BING, NISHIZAWA S, KAKIMOTO KOICHI

結晶成長国内会議予稿集(CD-ROM)　43rd　ROMBUNNO.07AA09　2013

ISSN： 0385-6275
Stabilities of GaAs(100) Surfaces under As2, H2, and N2 Conditions as a Model for Vapor-Phase Epitaxy of GaAs1-xNx: a First-Principles Study

VALENCIA HUBERT, KANGAWA YOSHIHIRO, KAKIMOTO KOICHI

結晶成長国内会議予稿集(CD-ROM)　43rd　ROMBUNNO.07AB07　2013

ISSN： 0385-6275
Numerical Investigation of the Influence of Cooling Flux on the Generation of Dislocations in Cylindrical Mono-like Silicon Growth

GAO BING, NAKANO SATOSHI, HARADA HIROFUMI, MIYAMURA YOSHIJI, SEKIGUCHI TAKASHI, KAKIMOTO KOICHI

結晶成長国内会議予稿集(CD-ROM)　43rd　ROMBUNNO.08AA10　2013

ISSN： 0385-6275
Dislocation Analysis of a New Method for Growing Large-Size Crystals of Monocrystalline Silicon Using a Seed Casting Technique

Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto

CRYSTAL GROWTH & DESIGN　12　(12)　6144-6150　2012/12

DOI： 10.1021/cg301274d 　

ISSN： 1528-7483
Anisotropic Thermal Stress Simulation with Complex Crystal-Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon

Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto

CRYSTAL GROWTH & DESIGN　12　(11)　5708-5714　2012/11

DOI： 10.1021/cg301225w 　

ISSN： 1528-7483

eISSN： 1528-7505
Toward Realization of Silicon Solar Cells with High Efficiency

KAKIMOTO Koichi, BING Gao, NAKANO Satoshi, KANGAWA Yoshihiro, HARADA Hirofumi

Journal of the Japanese Association of Crystal Growth　39　(3)　135-141　2012/10/31
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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This paper discusses the determination factors of conversion efficiency in solar cells fabricated by silicon. The factors are impurity concentrations of light elements and heavy metals in a crystal, dislocation density and shape of a solid-liquid interface. A silicon multicrystal grown by a floating zone (FZ) method has about conversion efficiency with 80 to 90 percent of that in single crystalline silicon grown by FZ method. This result shows that the key point to obtain a high efficiency solar cell is to reduce impurity such as light elements and heavy metals, and dislocation.
N Substitution in GaAs(001) Surface under an Atmosphere of Hydrogen

Jun Kawano, Yoshihiro Kangawa, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(10)　10ND17.1-10ND17.4　2012/10

DOI： 10.1143/JJAP.51.10ND17 　

ISSN： 0021-4922
Dislocation analysis for a large-size monocrystalline silicon by newly designed seed casting technique

GAO BING, NAKANO SATOSHI, HARADA HIROFUMI, MIYAMURA YOSHIJI, SEKIGUCHI TAKASHI, KAKIMOTO KOICHI

応用物理学会学術講演会講演予稿集(CD-ROM)　73rd　ROMBUNNO.12P-F6-3　2012/08/27
Time evolution of dislocation and polytype distribution of bulk SiC PVT crystal growth by time-dependent simulation

GAO BING, NAKANO SATOSHI, NISHIZAWA SHIN-ICHI, KAKIMOTO KOICHI

応用物理学会学術講演会講演予稿集(CD-ROM)　73rd　ROMBUNNO.12A-H7-2　2012/08/27
First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto

PHYSICAL REVIEW B　86　(8)　085417.1-085417.7　2012/08

DOI： 10.1103/PhysRevB.86.085417 　

ISSN： 1098-0121
Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, Yasuyuki Suzuki

JOURNAL OF CRYSTAL GROWTH　351　(1)　32-36　2012/07

DOI： 10.1016/j.jcrysgro.2012.04.022 　

ISSN： 0022-0248

eISSN： 1873-5002
Role of marangoni tension effects on the melt convection in directional solidification process for multi-crystalline silicon ingots

Zaoyang Li, Lijun Liu, Xiaohong Nan, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　346　(1)　40-44　2012/05

DOI： 10.1016/j.jcrysgro.2012.02.031 　

ISSN： 0022-0248
Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura

JOURNAL OF APPLIED PHYSICS　111　(7)　074505-074505-5　2012/04

DOI： 10.1063/1.3700250 　

ISSN： 0021-8979

eISSN： 1089-7550
Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

Jun Kawano, Yoshihiro Kangawa, Tomonori Ito, Koichi Kakimoto, Akinori Koukitu

JOURNAL OF CRYSTAL GROWTH　343　(1)　105-109　2012/03

DOI： 10.1016/j.jcrysgro.2011.12.079 　

ISSN： 0022-0248

eISSN： 1873-5002
Anisotropic thermal stress analysis with complex crystal-melt interface evolution for seeded growth of monocrystalline silicon

GAO B, NAKANO S, HARADA H, MIYAMURA Y, SEKIGUCHI T, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集(CD-ROM)　59th　ROMBUNNO.17P-B10-3　2012/02/29
Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer

Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(2)　02BP08.1-02BP08.3　2012/02

DOI： 10.1143/JJAP.51.02BP08 　

ISSN： 0021-4922

eISSN： 1347-4065
Study on Solution Growth Technique of Bulk AlN Using Solid Sources

KANGAWA Yoshihiro, EPELBAUM Boris M., KUWANO Noriyuki, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　38　(4)　274-279　2012/01/31
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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A novel method of AlN solution growth using solid sources was proposed. In this method, a thick layer of single-crystalline AlN was grown epitaxially on an aggregate of self-nucleated columnar AlN crystals. The growth rate was so high that the thickness reaches 〜5 μm in 10 hr. The transmission electron microscopy analysis showed that the AlN layer epitaxially grew on the (1-100) side-wall of the columnar seed crystal and contained threading dislocations (TDs) propagating along [1-100]. The density of TDs was as large as 〜10^9 cm^<-2> in the lower region of AlN layer but decreased down to be 〜10^8 cm^<-2> in the upper region. The reduction in density was confirmed to be due to the formation of dislocation dipoles or half-loops. These results suggest that the present method can grow high-quality bulk AlN under the moderate growth conditions (temperature:T=1250-1200℃, N_2 pressure:p=1 atm).
SiCステップにおけるC原子グラフェン化過程への理論的アプローチ

井上仁人, 寒川義裕, 寒川義裕, 影島愽之, 若林克法, 柿本浩一, 柿本浩一

結晶成長国内会議予稿集(CD-ROM)　42nd　2012

ISSN： 2188-7268
Analysis of growth velocity of SiC growth by the physical vapor transport method

Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin-ichi Nishizawa

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2　717-720　(Pt.1)　25-+　2012

DOI： 10.4028/www.scientific.net/MSF.717-720.25 　

ISSN： 0255-5476
Time evolution of dislocation and polytype distribution of bulk SiC PVT crystal growth by time-dependent simulation

GAO BING, NAKANO SATOSHI, NISHIZAWA SHIN-ICHI, KAKIMOTO KOICHI

結晶成長国内会議予稿集(CD-ROM)　42nd　ROMBUNNO.09AC13　2012

ISSN： 0385-6275
Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling

Bing Gao, Satoshi Nakano, Koichi Kakimoto

CRYSTAL GROWTH & DESIGN　12　(1)　522-525　2012/01

DOI： 10.1021/cg201465t 　

ISSN： 1528-7483
Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, Shigeo Kotake, Yasuyuki Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS　51　(1)　01AF06.1-01AF06.4　2012/01

DOI： 10.1143/JJAP.51.01AF06 　

ISSN： 0021-4922

eISSN： 1347-4065
Microstructure of Bulk AlN Grown by A New Solution Growth Method

Yoshihiro Kangawa, Noriyuki Kuwano, Boris M. Epelbaum, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(12)　120202.1-120202.3　2011/12

DOI： 10.1143/JJAP.50.120202 　

ISSN： 0021-4922
Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources

Yoshihiro Kangawa, Ryutaro Toki, Tomoe Yayama, Boris M. Epelbaum, Koichi Kakimoto

APPLIED PHYSICS EXPRESS　4　(9)　095501.1-095501.3　2011/09

DOI： 10.1143/APEX.4.095501 　

ISSN： 1882-0778
Numerical simulation and optimization during AlN PVT crystal growth by fully-coupled compressible flow solver

GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

応用物理学会学術講演会講演予稿集(CD-ROM)　72nd　ROMBUNNO.30P-ZF-11　2011/08/16
Reduction of multicrystalline silicon near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI, HARADA HIROFUMI, MIYAMURA YOSHIJI, SEKIGUCHI TAKASHI

応用物理学会学術講演会講演予稿集(CD-ROM)　72nd　ROMBUNNO.1P-ZH-5　2011/08/16
Report from the German-Polish Conference on Crystal Growth GPCCG2011(News of JACG)

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　38　(1)　62-63　2011/04/30
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
InGaN成長におけるIn取り込み量の面方位依存性に関する理論検討

屋山巴, 川野潤, 寒川義裕, 柿本浩一, 纐纈明伯

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　ROMBUNNO.27A-BZ-5　2011/03/09
熱力学解析によるGaAsN成長における原料ガスの違いによる影響の検討

川野潤, 寒川義裕, 屋山巴, 柿本浩一, 纐纈明伯

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　ROMBUNNO.25P-BQ-12　2011/03/09
Numerical simulation and optimization during AlN PVT crystal growth

GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　ROMBUNNO.25P-BY-15　2011/03/09
High purity multicrystalline silicon production in unidirectional solidification furnace

GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集(CD-ROM)　58th　ROMBUNNO.27A-BL-5　2011/03/09
Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface

Masato Inoue, Yoshihiro Kangawa, Katsunori Wakabayashi, Hiroyuki Kageshima, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS　50　(3)　038003.1-038003.2　2011/03

DOI： 10.1143/JJAP.50.038003 　

ISSN： 0021-4922
GaAsN気相エピタキシーにおける窒素取り込みに関する理論的検討

川野潤, 寒川義裕, 屋山巴, 伊藤智徳, 柿本浩一, 纐纈明伯

結晶成長国内会議予稿集(CD-ROM)　41st　ROMBUNNO.03AB07　2011

ISSN： 0385-6275
Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell

Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Tomonori Ito, Koichi Kakimoto, Akinori Koukitu

Conference Record of the IEEE Photovoltaic Specialists Conference　37th Vol.1　000496-000500　2011

DOI： 10.1109/PVSC.2011.6186002 　

ISSN： 0160-8371
Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible

Xuejiang Chen, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　312　(22)　3261-3266　2010/11

DOI： 10.1016/j.jcrysgro.2010.08.045 　

ISSN： 0022-0248
1801 Dynamic simulation of defects in silicon crystals for PVs and LSIs

KAKIMOTO Koichi

The Computational Mechanics Conference　2010　(23)　642-643　2010/09/23
Publisher: The Japan Society of Mechanical Engineers
ISSN： 1348-026X
Possibility of AlN growth using Li-Al-N solvent

Yoshihiro Kangawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　312　(18)　2569-2573　2010/09

DOI： 10.1016/j.jcrysgro.2010.04.014 　

ISSN： 0022-0248
熱力学解析によるGaAsN成長における基板拘束の寄与の検討

川野潤, 池田和磨, 寒川義裕, 柿本浩一, 纐纈明伯

応用物理学会学術講演会講演予稿集(CD-ROM)　71st　ROMBUNNO.14P-ZV-14　2010/08/30
Stoichiometry simulation during SiC PVT crystal growth

GAO BING, CHEN XUEJIANG, NAKANO SATOSHI, NISHIZAWA SHIN-ICHI, KAKIMOTO KOICHI

応用物理学会学術講演会講演予稿集(CD-ROM)　71st　ROMBUNNO.14A-ZS-1　2010/08/30
AlN synthesis on AlN/SiC template using Li-Al-N solvent

Yoshihiro Kangawa, Koichi Kakimoto

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　207　(6)　1292-1294　2010/06

DOI： 10.1002/pssa.200983566 　

ISSN： 1862-6300
Numerical simulation of a new SiC growth system by the dual-directional sublimation method

Xuejiang Chen, Shin-ichi Nishizawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　312　(10)　1697-1702　2010/05

DOI： 10.1016/j.jcrysgro.2010.02.027 　

ISSN： 0022-0248
Coupled full compressible multi-phase flow simulation of SiC sublimation growth

GAO BING, CHEN XUEJIANG, NAKANO SATOSHI, NISHIZAWA SHIN-ICHI, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集(CD-ROM)　57th　ROMBUNNO.17A-TJ-2　2010/03/03
Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

GAO BING, CHEN XUEJIANG, NAKANO SATOSHI, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集(CD-ROM)　57th　ROMBUNNO.18P-TG-12　2010/03/03
Investigation of a SiC dual-directional sublimation method (D2S Method) by global simulation model

CHEN XUEJIANG, GAO BING, NAKANO SATOSHI, NISHIZAWA SHIN-ICHI, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集(CD-ROM)　57th　ROMBUNNO.17A-TJ-1　2010/03/03
Crystal growth of semiconductor bulk crystals

Koichi Kakimoto

SELECTED TOPICS ON CRYSTAL GROWTH　1270　93-106　2010

DOI： 10.1063/1.3476241 　

ISSN： 0094-243X
Crystals Science and Technology of Solar Cells Materials-Goncentrated on Crystal Growth-Numerical Analysis of Impurity Transport in a Unidirectional Solidification Furnace for Multicrystalline Silicon

GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

日本結晶成長学会誌　36　(4)　261-267　2010/01

DOI： 10.19009/jjacg.36.4_261 　

ISSN： 0385-6275
Romanian Conference on Advanced Materials, ROCAM2009

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　36　(3)　230-230　2009/10/31
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Numerical analysis of impurities transport in a unidirectional solidifircation furnace

GAO BING, NAKANO SATOSHI, KAKIMOTO KOICHI

Rep Res Inst Appl Mech Kyushu Univ　(137)　137-142　2009/09

ISSN： 1345-5664
Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS　48　(8)　088004.1-088004.2　2009/08

DOI： 10.1143/JJAP.48.088004 　

ISSN： 0021-4922
Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method

Koichi Kakimoto, Lijun Liu

JOURNAL OF CRYSTAL GROWTH　311　(8)　2313-2316　2009/04

DOI： 10.1016/j.jcrysgro.2009.02.041 　

ISSN： 0022-0248
Numerical analysis of the formation of Si3N4 and Si2N2O during a directional solidification process in multicrystalline silicon for solar cells

Sho Hisamatsu, Hitoshi Matsuo, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　311　(9)　2615-2620　2009/04

DOI： 10.1016/j.jcrysgro.2009.02.018 　

ISSN： 0022-0248

eISSN： 1873-5002
基板拘束を受けたInGaN薄膜の組成制御に関する理論検討

屋山巴, 寒川義裕, 柿本浩一, 纐纈明伯

応用物理学関係連合講演会講演予稿集　56th　(1)　402　2009/03/30
Crystal Growth and Characterization of Multi Crystalline Silicon Grown by Directional

KAKIMOTO Koichi

Materials science and technology　46　(1)　13-17　2009/02/20
Publisher: 日本材料科学会
ISSN： 1347-4774
Effect of crucible rotation on oxygen concentration during unidirectional solidification process of multicrystalline silicon for solar cells

Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　311　(4)　1123-1128　2009/02

DOI： 10.1016/j.jcrysgro.2008.11.063 　

ISSN： 0022-0248
The 5th International Symposium on Advanced Science and Technology of Silicon Materials

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　35　(4)　276-276　2009/01/31
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Distribution of Light Elements in Multicrystalline Silicon for Solar Cells Grown by Directional Solidification

Hitoshi Matsuo, Sho Hisamatsu, Yoshihiro Kangawa, Koichi Kakimoto

JOURNAL OF THE ELECTROCHEMICAL SOCIETY　156　(9)　H711-H715　2009

DOI： 10.1149/1.3155433 　

ISSN： 0013-4651
Simulation of defects in unidirectional solidified crystal silicon for solar cells

CHEN XUEJIANG, NAKANO SATOSHI, KAKIMOTO KOICHI

格子欠陥フォーラム講演予稿集　19th　35-38　2009
Numerical Investigation of the Influence of Material Property of a Crucible on Interface Shape in a Unidirectional Solidification Process

Hiroaki Miyazawa, Lijun Liu, Koichi Kakimoto

CRYSTAL GROWTH & DESIGN　9　(1)　267-272　2009/01

DOI： 10.1021/cg800435d 　

ISSN： 1528-7483
Thermal Conductivity of SiC Calculated by Molecular Dynamics

Takahiro Kawamura, Daisuke Hori, Yoshihiro Kangawa, Koichi Kakimoto, Masashi Yoshimura, Yusuke Mori

JAPANESE JOURNAL OF APPLIED PHYSICS　47　(12)　8898-8901　2008/12

DOI： 10.1143/JJAP.47.8898 　

ISSN： 0021-4922
Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell

Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(22)　4666-4671　2008/11

DOI： 10.1016/j.jcrysgro.2008.08.045 　

ISSN： 0022-0248
太陽電池用多結晶シリコン成長中の坩堝回転が酸素濃度分布に与える影響

松尾整, BAIRAVA GANESH R, 中野智, LIU Lijun, 寒川義裕, 新船幸二, 大下祥雄, 山口真史, 柿本浩一

応用物理学会学術講演会講演予稿集　69th　(1)　269　2008/09/02
Analysis of oxygen incorporation processes in multicrystalline silicon for solar cell during unidirectional solidification process

Matuo Hitoshi, Nakano Satoshi, Arafune Koji, 大下祥雄, 山口真史, 柿本浩一

Reports of Research Institute for Applied Mechanics,Kyushu University　(135)　119-124　2008/09
Publisher: 〔九州大学応用力学研究所〕
DOI： 10.15017/14195 　

ISSN： 1345-5664

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We studied the mechanism of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidifiation process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using FTIR measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated from 3 to 5 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to with that estimated by theoretical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si_3N_4 to the melt during growth process.
Numerical investigation of thermal stress and dislocation density in silicon ingot during a solidification process

CHEN XUEJIANG, NAKANO SATOSHI, LIU LIJUN, KAKIMOTO KOICHI

Rep Res Inst Appl Mech Kyushu Univ　(135)　45-52　2008/09
Publisher: Research Institute for Applied Mechanics, Kyushu University
DOI： 10.15017/14183 　

ISSN： 1345-5664
Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique

R. Bairava Ganesh, Hitoshi Matsuo, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

CRYSTAL GROWTH & DESIGN　8　(7)　2525-2527　2008/07

DOI： 10.1021/cg800160g 　

ISSN： 1528-7483
一方向性凝固法による太陽電池用多結晶シリコンの酸素混入機構の解明

松尾整, GANESH R. Bairava, 中野智, LIU Lijun, 寒川義裕, 新船幸二, 大下祥雄, 山口真史, 柿本浩一

ナノ学会大会講演予稿集　6th　262　2008/05/07

ISSN： 1347-8028
Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method

R. Bairava Ganesh, Hitoshi Matsuo, Takahiro Kawamura, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(11)　2697-2701　2008/05

DOI： 10.1016/j.jcrysgro.2008.01.049 　

ISSN： 0022-0248
Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy

Tatsuhito Wakigawa, Toshihiko Nagano, Yoshihiro Kangawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(11)　2827-2831　2008/05

DOI： 10.1016/j.jcrysgro.2008.02.016 　

ISSN： 0022-0248
ACRTを用いた太陽電池用多結晶シリコン中の炭素濃度の制御

GANESH R. Bairava, 松尾整, 中野智, LIU Lijun, 寒川義裕, 新船幸二, 大下祥雄, 山口真史, 柿本浩一

応用物理学関係連合講演会講演予稿集　55th　(1)　338　2008/03/27
太陽電池用多結晶シリコンの熱化学的解析を用いた酸素混入機構の解明

松尾整, GANESH R.Bairava, 中野智, LIU Lijun, 寒川義裕, 新船幸二, 大下祥雄, 山口真史, 柿本浩一

応用物理学関係連合講演会講演予稿集　55th　(3)　1527　2008/03/27
Numerical analysis of the influence of tilt of crucibles on interface shape and fields of temperature and velocity in the unidirectional solidification process

Hiroaki Miyazawa, Lijun Liu, Sho Hisamatsu, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(6)　1034-1039　2008/03

DOI： 10.1016/j.jcrysgro.2007.12.021 　

ISSN： 0022-0248
Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process

Hiroaki Miyazaw, Lijun Liu, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(6)　1142-1147　2008/03

DOI： 10.1016/j.jcrysgro.2007.12.056 　

ISSN： 0022-0248

eISSN： 1873-5002
Theoretical approach to control of growth form of cubic GaN during MBE

寒川義裕, 秋山亨, 伊藤智徳, 白石賢二, 柿本浩一

結晶成長国内会議予稿集　38th　2008

ISSN： 0385-6275
Analysis of distribution for light element and precipitation in multicrystalline silicon solar cell

MATSUO HITOSHI, HISAMATSU SHO, KANGAWA YOSHIHIRO, ARAFUNE KOJI, OSHITA YOSHIO, YAMAGUCHI MASAFUMI, KAKIMOTO KOICHI

結晶成長国内会議予稿集　38th　77　2008

ISSN： 0385-6275
Numerical investigation of dislocation density in silicon ingot during solidification process of multicrystalline silicon

CHEN XUEJIANG, NAKANO SATOSHI, LIU LIJUN, KAKIMOTO KOICHI

結晶成長国内会議予稿集　38th　76　2008

ISSN： 0385-6275
Effects of crystal rotation rate on the melt-crystal interface of a CZ-Si crystal growth in a transverse magnetic field

Lijun Liu, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　310　(2)　306-312　2008/01

DOI： 10.1016/j.jcrysgro.2007.10.043 　

ISSN： 0022-0248

eISSN： 1873-5002
Report on the 13th International Summer School on Crystal Growth

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　34　(3)　172-173　2007/09/23
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
一方向性凝固法による多結晶シリコンの酸素混入過程の解析

松尾整, GANESH R. Bariava, 中野智, LIU Lijun, 寒川義裕, 新船幸二, 大下祥雄, 山口真史, 柿本浩一

応用物理学会学術講演会講演予稿集　68th　(3)　1482　2007/09/04
Possibility of AlN solution growth using Al and Li3N

Yoshihiro Kangawa, Tatsuhito Wakigawa, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　46　(9A)　5785-5787　2007/09

DOI： 10.1143/JJAP.46.5785 　

ISSN： 0021-4922
Enhancement of boron diffusion in silicon by continuous wave CO2 laser irradiation

Hiroshi Yamada-Kaneta, Katsuto Tanahashi, Koichi Kakimoto, Shozo Suto

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　46　(8A)　5085-5088　2007/08

DOI： 10.1143/JJAP.46.5085 　

ISSN： 0021-4922
Oxygen-isotope-doped silicon crystals grown by a floating zone method

Koichi Kakimoto, Katsuto Tanahashi, Hiroshi Yamada-Kaneta, Tohru Nagasawa

JOURNAL OF CRYSTAL GROWTH　304　(2)　310-312　2007/06

DOI： 10.1016/j.jcrysgro.2007.03.015 　

ISSN： 0022-0248
一方向凝固多結晶シリコン内の応力分布解析

松尾整, 河村貴宏, GANESH R.Bairava, 寒川義裕, 新船幸二, 大下祥雄, 山口真史, 柿本浩一

応用物理学関係連合講演会講演予稿集　54th　(1)　454　2007/03/27
Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer

Yuriko Matsuo, Yoshihiro Kangawa, Rie Togashi, Koichi Kakimoto, Akinori Koukitu

Journal of Crystal Growth　300　66-69　2007/03/01

DOI： 10.1016/j.jcrysgro.2006.10.204 　

ISSN： 0022-0248
Investigation of oxygen distribution in electromagnetic CZ-Si melts with a transverse magnetic field using 3D global modeling

Lijun Liu, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH　299　(1)　48-58　2007/02

DOI： 10.1016/j.jcrysgro.2006.10.247 　

ISSN： 0022-0248
Analysis of compositional instability of InGaN by Monte Carlo simulation

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

Journal of Crystal Growth　298　190-192　2007/01/01

DOI： 10.1016/j.jcrysgro.2006.10.017 　

ISSN： 0022-0248
Numerical study of the relationship between growth condition and atomic arrangement of InGaN

Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu

physica status solidi (b)　244　(6)　1784-1788　2007

DOI： 10.1002/pssb.200674742 　
Growth rate estimation in multicrystalline silicon by the growth induced striation method

GANESH R. BAIRAVA, MATSUO HITOSHI, KAWAMURA TAKAHIRO, KANGAWA YOSHIHIRO, ARAFUNE KOJI, OHSHITA YOSHIO, YAMAGUCHI MASAFUMI, KAKIMOTO KOICHI

結晶成長国内会議予稿集　37th　11　2007

ISSN： 0385-6275
Dynamic analysis of temperature distribution in multi-crystalline silicon of a casting method with moving heater system

NAKANO Satoshi, LIU Lijun, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　33　(4)　181-181　2006/11/30
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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2D-axisymmetric global simulation was carried out to analyze temperature and velocity fields during silicon crystal growth. Configuration of heaters were changed to clarify the effects of the height and the position of the heaters on temperature distribution. We used a system with 3 heaters; heaterl and 2, heaterl and 3, heater2 and 3. Total heater power was distributed the heaters. Distribution of power in the heaters was modified to study how such distribution modifies the temperature distribution. We studied the effect of input heater power distribution and position of heaterl and 2 on the melt-solid interface shape, the thermal field and convection of melt in the crucible.
Investigation of thermal conductivity of GaN/AlN quantum dots

KAWAMURA Takahiro, KANGAWA Yoshihiro, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　33　(4)　208-208　2006/11/30
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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We investigated the thermal conductivity of GaN/AlN quantum dots by molecular dynamics simulation. Equilibrium molecular dynamics based on Green-Kubo's formula was employed for calculation of thermal conductivity. The results showed that the value of thermal conductivity in the a and m-axes directions had increased with increasing the thickness of superlattice period.
Investigation of thermal conductivity of single and multi-walled carbon nanotubes

KAWAMURA Takahiro, KANGAWA Yoshihiro, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　33　(4)　283-283　2006/11/30
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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The thermal conductivities of single and multi-walled carbon nanotubes were investigated by molecular dynamics simulation. Equilibrium molecular dynamics based on Green-Kubo's formula was employed to obtain the value of thermal conductivity. The values of thermal conductivity of cylindrical SWNTs were about 400W/mK, and they had no dependence on diamiter of SWNTs.
03aC14 Stress analyze for multi-silicon grown by unidirectional solidification method by using Raman scattering(NCCG-36)

Matsuo Hitoshi, Kawamura Takahiro, Kangawa Yoshihiro, Kakimoto Koichi, Arafune Koji, Ohshita Yoshio, Ymaguchi Masafumi

Journal of the Japanese Association of Crystal Growth　33　(4)　337-337　2006/11/01
Publisher: The Japanese Association for Crystal Growth (JACG)
DOI： 10.19009/jjacg.33.4_337 　

ISSN： 0385-6275

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Stresses in the growing crystal have been measured by experiment of Raman scattering, and calculated theoretically by using molecular dynamics. Peaks in Raman scattering shift to the larger wave numbers as increase the pressure in the system. When we modify the pressure in the simulation system, the results have agreement with the experimental results.
Three-dimensional global analysis of heat transfer in a unidirectional solidification process for silicon solar cells

LIU LIJUN, YONEDA DAIGO, TAKAHASHI NANAKO, NAKANO SATOSHI, CHEN XUEJIANG, KAKIMOTO KOICHI

日本結晶成長学会誌　33　(4)　180　2006/11/01

DOI： 10.19009/jjacg.33.4_180 　

ISSN： 0385-6275
InGaN中に形成される微細組織の理論検討

寒川義裕, 柿本浩一, 伊藤智徳, 纐纈明伯

応用物理学会学術講演会講演予稿集　67th　(1)　329　2006/08/29
GaNバッファ層成長におけるSi(111)基板表面の水素被覆率の影響

松尾有里子, 寒川義裕, 冨樫理恵, 柿本浩一, 纐纈明伯

応用物理学会学術講演会講演予稿集　67th　(1)　316　2006/08/29
New solution method for homogenization analysis and its application to the prediction of macroscopic elastic constants of materials with periodic microstructures

WX Wang, DM Luo, Y Takao, K Kakimoto

COMPUTERS & STRUCTURES　84　(15-16)　991-1001　2006/06

DOI： 10.1016/j.compstruc.2006.02.013 　

ISSN： 0045-7949
Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light

LJ Liu, K Tanahashi, H Yamada-Kaneta, Y Kangawa, K Kakimoto

JOURNAL OF APPLIED PHYSICS　99　(7)　073103-073103-4　2006/04

DOI： 10.1063/1.2189022 　

ISSN： 0021-8979
Observation of low-temperature elastic softening due to vacancy in crystalline silicon

T Goto, H Yamada-Kanetai, Y Saito, Y Nemoto, K Sato, K Kakimoto, S Nakamura

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN　75　(4)　044602.1-044602.6　2006/04

DOI： 10.1143/JPSJ.75.044602 　

ISSN： 0031-9015
GaN(001)成長初期過程の原子レベル解析

寒川義裕, 秋山亨, 伊藤智徳, 白石賢二, 柿本浩一

応用物理学関係連合講演会講演予稿集　53rd　(1)　2006
24aPS-98 Elastic Softening Associated with Single Vacancy in Crystalline Silicon

Sato Koji, Goto Terutaka, Yamada-Kaneta Hiroshi, Saito Yasuhiro, Nemoto Yuichi, Kakimoto Koichi, Nakamura Shintaro

Meeting Abstracts of the Physical Society of Japan　61　(0)　463-463　2006
Publisher: The Physical Society of Japan
DOI： 10.1143/jpsj.75.044602 　

ISSN： 1342-8349
Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements

Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

ECS Transactions　3　(4)　375-385　2006

DOI： 10.1149/1.2355772 　

ISSN： 1938-5862 1938-6737
New method to determine the exact periodic boundary conditions for macro-microscopic homogenization analysis and its application on the prediction of effective elastic constants of periodic materials

Dongmei Luo, Wen-Xue Wang, Yoshihiro Takao, Koichi Kakimoto

Journal of Mechanical Strength　28　(4)　.517-523　2006
3D Numerical Analysis of Silicon Crystal Growth

KAKIMOTO KOICHI, LIU LIJUN

Int Symp Adv Fluid Inf　6th　23-26　2006

ISSN： 1344-2236
Partly three-dimensional global modeling of a silicon Czochralski furnace. II. Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic field

LJ Liu, K Kakimoto

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER　48　(21-22)　4492-4497　2005/10

DOI： 10.1016/j.ijheatmasstransfer.2005.04.030 　

ISSN： 0017-9310
Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model

LJ Liu, K Kakimoto

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER　48　(21-22)　4481-4491　2005/10

DOI： 10.1016/j.ijheatmasstransfer.2005.04.031 　

ISSN： 0017-9310
Investigation of thermal conductivity of GaN by molecular dynamics

T Kawamura, Y Kangawa, K Kakimoto

JOURNAL OF CRYSTAL GROWTH　284　(1-2)　197-202　2005/10

DOI： 10.1016/j.jcrysgro.2005.07.018 　

ISSN： 0022-0248

eISSN： 1873-5002
Preface for Special Issue on single and multi crystalline silicon

KAKIMOTO Koichi, UDA Satoshi

Journal of the Japanese Association of Crystal Growth　32　(4)　290-290　2005/09/30
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Advancement of Numerical Investigation of a Silicon Czochralski Growth with Application of a Transverse Magnetic Field

LIU LIJUN, NAKANO SATOSHI, KAKIMOTO KOICHI

日本結晶成長学会誌　32　(4)　306-313　2005/09/30
Publisher: The Japanese Association for Crystal Growth (JACG)
DOI： 10.19009/jjacg.32.4_306 　

ISSN： 0385-6275

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A three-dimensional (3D) global model was recently developed for simulation of heat transfer in a Czochralski (CZ) furnace for silicon crystal growth. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite control-volume method. The model was demonstrated to be valid and reasonable, and it enables 3D global simulations are conducted with moderate requirements of computer memory and computation time. Some results obtained recently using this 3D global model were reported for a small silicon CZ growth in a transverse magnetic field (TMCZ). The results of heat and oxygen transfers in the melt of an electromagnetic CZ configuration (EMCZ) were also introduced. The model showed powerful capability in analyzing heat, mass and oxygen transfers in a CZ configuration.
Prediction of the Stiffness and Stresses for Carbon Nano-Tube Composites Based on Homogenization Analysis

LUO DONG-MEI, WANG WEN-XUE, TAKAO YOSHIHIRO, KAKIMOTO KOICHI

Rep Res Inst Appl Mech Kyushu Univ　(129)　37-45　2005/09
Publisher: Research Institute for Applied Mechanics, Kyushu University
DOI： 10.15017/26794 　

ISSN： 1345-5664
Monte Carlo simulation for compositional instability of InGaN

Journal of the Japanese Association of Crystal Growth　32　(3)　142-142　2005/08/17
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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We performed Monte Carlo simulations in order to understand compositional instability of InGaN films grown by vapor phase epitaxy. The results imply that site-exchanging process of atoms near the growth surface has a significant influence on the atomic configurations in the InGaN films.
Investigation of an Effect of Lattice Defect on Thermal Conductivity of GaN by Molecular Dynamics

KAWAMURA Takahiro, KANGAWA Yoshihiro, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　32　(3)　138-138　2005/08/17
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Thermal conductivity of GaN influenced by defects was calculated by molecular dynamics simulation, and we investigated the cause of the discrepancy between calculation and experimental results. We employed equilibrium molecular dynamics based on Green-Kubo's formula.
Investigation of Thermal Conductivity of AlN/GaN Superlattices by Molecular Dynamics

KAWAMURA Takahiro, KANGAWA Yoshihiro, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　32　(3)　139-139　2005/08/17
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Thermal conductivity of AlN/GaN superlattices was investigated by molecular dynamics simulation. We employed equilibrium molecular dynamics based on Green-Kubo's formula. The results showed that the value of thermal conductivity in the c-axis direction which is perpendicular to layers had seriously reduced compared to that of bulk GaN.
Dynamic simulation of a casting process for crystalline silicon solar cells with a global model

LIU LIJUN, NAKANO SATOSHI, KAKIMOTO KOICHI

日本結晶成長学会誌　32　(3)　111　2005/08/17

DOI： 10.19009/jjacg.32.3_111 　

ISSN： 0385-6275
Investigation of oxygen transport in silicon melts of EMCZ growth using 3D global modeling

LIU LIJUN, NAKANO SATOSHI, KAKIMOTO KOICHI

日本結晶成長学会誌　32　(3)　110　2005/08/17

DOI： 10.19009/jjacg.32.3_110 　

ISSN： 0385-6275
An analysis of temperature distribution near the melt-crystal interface in silicon Czochralski growth with a transverse magnetic field

LJ Liu, S Nakano, K Kakimoto

JOURNAL OF CRYSTAL GROWTH　282　(1-2)　49-59　2005/08

DOI： 10.1016/j.jcrysgro.2005.05.002 　

ISSN： 0022-0248
Thermodynamic stability of InAlGaN thin films grown on GaN and InN

KANGAWA Yoshihiro, KAKIMOTO Koichi, ITO Tomonori, KOUKITU Akinori

IEICE technical report. Component parts and materials　105　(91)　97-100　2005/05/26
Publisher: The Institute of Electronics, Information and Communication Engineers
ISSN： 0913-5685

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We investigated thermodynamic stability of InAlGaN based on calculations of enthalpy of mixing using empirical interatomic potentials. Moreover, we studied influence of lattice constraint from bottom layers ((0001)GaN and (0001)InN layer) on the thermodynamic stability of the semiconductor thin films. The results suggest that maximum point of the enthalpy of mixing shift to In-rich (In-poor) side if InAlGaN thin film is on the GaN (InN) layer. These results suggest that the lattice constraint from bottom layer has a significant influence on thermodynamic stability of thin films.
Numerical analysis of an electromagnetic CZ-SI growth process by 3dD global modeling

Lijun Liu, Satoshi Nakano, Koichi Kakimoto

HT2005: Proceedings of the ASME Summer Heat Transfer Conference 2005, Vol 3　(HT2005 Vol.3)　229-235　2005

DOI： 10.1115/HT2005-72496 　
Preface for Special Issue on Functional Material, Diamond

OYAMA Yasunao, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　31　(4)　303-303　2004/11/30
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
The Development of Three-dimensional Global Simulation Model in Crystal Growth

LIU Lijun, KAKIMOTO Koichi

Procee[d]ings of Thermal Engineering Conference　2004　223-224　2004/11/10
Publisher: The Japan Society of Mechanical Engineers

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This paper reports on the development of a model of three-dimensional global simulation in crystal growth with magnetic fields. A global model, which contains radiative, conductive and convective heat and mass transfers in a growth furnace of crystal, has been widely accepted for designing a furnace of crystal growth in actual production. Such a global model has been assumed to axisymmetric ; therefore the model imposed the furnace as an axisymmetric configuration. However, actual furnace has three-dimensional configuration, especially for a case with transverse magnetic fields applied. This paper reports the simple algorithms and calculated results of the three-dimensional global model. Such algorithm reports how to couple two-dimensional view factor to three-dimensional one. Moreover, temperature and velocity fields under transverse magnetic fields in a Cz furnace are also presented.
An investigation of thermal conductivity of GaN by molecular dynamics

KAWAMURA Takahiro, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　31　(3)　264-264　2004/08/25
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Thermal conductivity of GaN was investigated by molecular dynamics simulation. We employed equilibrium molecular dynamics based on Green-Kubo's formula. The results revealed that c-axis had highest thermal conductivity, and thermal conductivity of wurtzite GaN was almost the same as that of zincblende GaN.
Effects of the ACRT for crystal rotation on melt convection and crystal-melt interface shape in the double-crucible Czochralski process

KITASHIMA Tomonori, LIU Lijun, KITAMURA Kenji, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　31　(3)　107-107　2004/08/25
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Effects of the ACRT for crystal rotation on melt convection and crystal-melt interface shape were investigated by two-dimensional time-dependent numerical simulation. The difference of the initiation time between the ACRT for crystal rotation and for crucible rotation, Δt_<ACRT>, was set to 0〜65s. It was found to take a long duration time for the melt moving from around the melt surface to the interface when the Δt_<ACRT> was set to 25s compared to the case of 65s.
3D global simulation of a small CZ-Si furnace in a transverse magnetic field with rotating crucible and crystal

LIU Lijun, KITASHIMA Tomonori, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　31　(3)　104-104　2004/08/25
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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A recently developed 3D global model was extended for the case in which the crystal and crucible are rotating. 3D global simulations were carried out for a small CZ-Si furnace in a transverse magnetic field. Most 3D features of the thermal field in the furnace were reproduced. The effect of crystal rotation rate on the melt-crystal interface shape was analyzed.
International Conference on Solid State Crystals-Material Science and Applications and 7^<th> Polish Conference on Crystal Growth, General Meeting of Polish Society for Crystal Growth

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　31　(2)　89-89　2004/07/31
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
IWMCG-4 - Proceedings of the Fourth International Workshop on Modeling in Crystal Growth - 4-7 November 2003 - Kyushu, Japan - Preface

CW Lan, N Imaishi, K Kakimoto

JOURNAL OF CRYSTAL GROWTH　266　(1-3)　XI-XII　2004/05

DOI： 10.1016/j.jcrysgro.2004.02.072 　

ISSN： 0022-0248
Flow analysis of silicon melt of TEMCZ method

KAKIMOTO Koichi, SHINOZAKI Takashige, HASHIMOTO Yoshio

The Computational Mechanics Conference　2003　(16)　117-118　2003/11/22
Publisher: The Japan Society of Mechanical Engineers
ISSN： 1348-026X

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Flow with three-dimensional time-dependent phenomena of silicon melt in an electromagnetic Czochralski (EMCZ) system with transverse magnetic fields was numerically investigated. This paper focused on the effect of electrode positions and direction of electric current on heat and oxygen transfer in the melt. The results showed that the case with current flow perpendicular to the magnetic fields can modify heat and oxygen transfer in the melt. The also results showed that electric current flow perpendicular to the applied transverse magnetic fields enhanced heat and oxygen transfer from crucible to a crystal in the melt.
Numerical analysis of the transport mechanism of continuous charge and its influence on melt temperature in the DCCZ process using ACRT

KITASHIMA Tomonori, LIU Lijun, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　30　(3)　69-69　2003/07/05
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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The transport mechanism of raw material LiNbO_3 fed on a melt, and the influence of feeding polycrystalline granules on the melt temperature in the double crucible were investigated by three-dimensional numerical simulation. The raw material flowing into the inner crucible reaches the melt-crystal interface along the inside of the inner crucible and the melt surface. The influence of feeding LiNbO_3 granules on melt temperature is very small even when the crucible rotation rate is low.
An analysis of diffusion of boron during solidification

LIU L., KAKIMOTO K., TAISHI T., HOSHIKAWA K.

Journal of the Japanese Association of Crystal Growth　30　(3)　61-61　2003/07/05
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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The numerical calculation was carried out to estimate the mechanism of boron diffusion during seeding process. The analysis clarified that diffusion in solid is a main factor of boron distribution in the crystal. Moreover, the effects of growth speed and annealing process on the distribution of boron were also discussed.
An analysis of the thermal conductivity of isotope silicon

MURAKAWA A., ISHII H., KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　30　(3)　58-58　2003/07/05
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Thermal conductivity of solid silicon as a function of the mole fraction of isotopes was investigated by molecular dynamics simulation. The thermal conductivity of isotope-silicon was calculated by using an empirical potential of Stillinger-Weber potential. We employed equilibrium molecular dynamics based on Green-Kubo's formula in which the autocorrelation function of heat flux was integrated as a function of duration time. The results of calculation showed that thermal conductivity of mixed isotope-silicon is smaller than that of pure isotope silicon. The results also showed that a pure isotope with a light mass has a large thermal conductivity.
Molecular dynamics analysis of diffusion of point defects in GaAs

T Kitashima, K Kakimoto, H Ozoe

JOURNAL OF THE ELECTROCHEMICAL SOCIETY　150　(3)　G198-G202　2003/03

DOI： 10.1149/1.1543569 　

ISSN： 0013-4651
Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system

K Kakimoto, A Tashiro, T Shinozaki, H Ishii, Y Hashimoto

JOURNAL OF CRYSTAL GROWTH　243　(1)　55-65　2002/08

DOI： 10.1016/S0022-0248(02)01473-2 　

ISSN： 0022-0248
Numerical analysis of melt mixing using accelerated crucible rotation technique (ACRT)

KAKIMOTO Koichi, KITAMURA Kenji

Journal of the Japanese Association of Crystal Growth　29　(2)　20-20　2002/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Three-dimensional time-dependent flow of oxide melts in Czochralski system was numerically investigated under a condition of an accelerated crucible rotation technique (ACRT). The effect of double crucible method, which can separate feed material and a growing crystal, was also studies simultaneously to grow long crystals. The calculation clarified that the time-dependent crucible-rotation with acceleration can stabilize the convection of the melt effectively. Moreover, it has been clarified that the double crucible rotation technique can also stabilize convection of the melt due to existence an inner wall.
Diffusion mechanism of an interstitial atom and a vacancy in solid GaAs by using molecular dynamics simulation

KITAJIMA Tomonori, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　29　(2)　86-86　2002/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Molecular dynamics simulation was carried out to estimate the diffusion coefficient and the mechanism of diffusion with a constant pressure and temperature. The following results were obtained: (1) There is a little diffusion of a vacancy in solid GaAs. (2) The diffusion path of an interstitial arsenic atom is different from that of an interstitial gallium atom. (3) The diffusion coefficient of an interstitial arsenic atom is larger than that of an interstitial gallium atom.
Numerical analysis of LiNbO_3 melt convection in the DCCZ process using ACRT.

KITASHIMA Tomonori, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　29　(2)　100-100　2002/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Numerical analysis was carried out to clarify LiNbO_3 melt convection in the DCCZ process. The inner crucible and the outer crucible were rotated by using ACRT method. The effect of the inner crucible on the LiNbO_3 melt convection was investigated.
Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt

K Kakimoto

JOURNAL OF CRYSTAL GROWTH　237　1785-1790　2002/04

DOI： 10.1016/S0022-0248(01)02341-7 　

ISSN： 0022-0248
Effect of rotating magnetic fields on temperature and oxgen distributions in silicon melt

Journal of Crystal Growth　237-239, 1785-1790　2002

DOI： 10.1016/S0022-0248(01)02341-7 　
Preface for Spectial Issue on "On the Advanced Control Techniques of Crystal Growth using Seed Crystals or Nuclei"

YAMAMOTO Toshiro, SHIBATA Masatomo, KAKIMOTO Koichi

28　(5)　298-298　2001/12/01

ISSN： 0385-6275
Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field

YC Won, K Kakimoto, H Ozoe

JOURNAL OF CRYSTAL GROWTH　233　(4)　622-630　2001/12

DOI： 10.1016/S0022-0248(01)01623-2 　

ISSN： 0022-0248
Heating rate dependence of melting of silicon: An in situ x-ray topography study

YR Wang, K Kakimoto

JOURNAL OF APPLIED PHYSICS　90　(5)　2247-2251　2001/09

DOI： 10.1063/1.1389481 　

ISSN： 0021-8979
Science and Technology

KAKIMOTO Koichi

28　(2)　51-51　2001/06/26

ISSN： 0385-6275
An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon

YR Wang, K Kakimoto

MICROELECTRONIC ENGINEERING　56　(1-2)　143-146　2001/05

DOI： 10.1016/S0167-9317(00)00517-7 　

ISSN： 0167-9317
An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon

Yuren Wang, Koichi Kakimoto

Microelectronic Engineering　56　(1-2)　143-146　2001/05

DOI： 10.1016/S0167-9317(00)00517-7 　

ISSN： 0167-9317
An In-situ Observation on The Remelting Process of Silicon

WANG YUREN, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集　48th　(1)　313　2001/03/28
Convective Instability in Crystal Growth System

Annual Review of Heat Transfer　12, 187-221　2001
Si bulk crystal growth: What and how?

K Kakimoto

ADVANCES IN CRYSTAL GROWTH RESEARCH　156-166　155-166　2001
Dislocation and Crystal-melt Interface In the Melting Processes of Silicon

Proceedings of the Fifth Symposium on Atomic-Scale Surface and Dynamics　133-140　2001
Oxygen distribution in Silicon melt under inhomogeneous transverse-magnetic field

Proceedings of the Fifth Symposium on Atomi-Scale Surface and Interface Dynamics　135-140　2001
An In-Situ Observation of Dislocation and Crystal-Melt Interface during the Melting of Silicon

Solid State Phonemana　78-79　217-224　2001
Convective Instability in Crystal Growth System

Annual Review of Heat Transfer　12, 187-221　2001
Si bulk crystal growth:What and how?

A davances in Crystal Growth Research　156-166　2001
An analysis of natural convection with radiation from the free surface of the fluid in a vertical cylinder

JS Szmyd, M Jaszczur, H Ozoe, K Kakimoto

JSME INTERNATIONAL JOURNAL SERIES B-FLUIDS AND THERMAL ENGINEERING　43　(4)　679-685　2000/11

DOI： 10.1299/jsmeb.43.679 　

ISSN： 1340-8054
In-situ Observation Solid-Liquid Interface of Silicon using X-ray Diffraction

KAKIMOTO Koichi, WANG Yuren

Meeting abstracts of the Physical Society of Japan　55　(2)　840-840　2000/09/10
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
The Heating Rate Dependence of Melting of Silicon: An In-situ X-ray Topography Study

WANG YUREN, KAKIMOTO KOICHI

応用物理学会学術講演会講演予稿集　61st　(1)　222　2000/09/03
Toward Simulation Technology in the Coming Century

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　27　(2)　33-35　2000/07/15
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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This report aims to forecast simulation technology in the coming century. The author discusses about the future condition of computer simulation from the point of view of basic science to actual application . Conditions of calculation using computers become extremely comfortable in the near future, therefore, we can obtain lots of results . The important points are as follows. 1) How to find meaningful results from lots of results. 2) How to predict attractive phenomena.
Oxygen transport in Si melts under inhomogeneous transverse magnetic fields

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　27　(1)　10-10　2000/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Mechanism of oxygen-incorporation into silicon single crystals from the melt under inhomogeneous magnetic fields was discussed using three-dimensional time-dependent calculation. Distribution of magnetic field is calculated from Biot-Savart's eq. by taking into account finite diameter of solenoids. Distributions of electric potential and oxygen concentration were modified by the inhomogeneous distribution of the magnetic fields.
Dislocations and Crystal-melt Interface Shape During the Melting of Silicon

WANG Yuren, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　27　(1)　5-5　2000/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Molecular dynamics analysis of point defects in silicon near solid-liquid interface

K Kakimoto, T Umehara, H Ozoe

APPLIED SURFACE SCIENCE　159　387-391　2000/06

DOI： 10.1016/S0169-4332(00)00121-5 　

ISSN： 0169-4332
Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields

K Kakimoto, H Ozoe

JOURNAL OF CRYSTAL GROWTH　212　(3-4)　429-437　2000/05

DOI： 10.1016/S0022-0248(00)00329-8 　

ISSN： 0022-0248
An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon

WANG YUREN, KAKIMOTO KOICHI

応用物理学関係連合講演会講演予稿集　47th　(1)　284　2000/03/28
Molecular dynamics analysis on diffusion of point defects

K Kakimoto, T Umehara, H Ozoe

JOURNAL OF CRYSTAL GROWTH　210　(1-3)　54-59　2000/03

DOI： 10.1016/S0022-0248(99)00646-6 　

ISSN： 0022-0248
Magnetic field effects on melt convection during crystal growth

Proc. the 12th KACG tech. meeting and the 4th Korea-Japan EMGS　187-196　2000
Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic field

Journal of Crystal Growth　212　(3/4)　429-437　2000

DOI： 10.1016/S0022-0248(00)00329-8 　

ISSN： 0022-0248
Atomic and Macroscale simulation of Transport Phenomena during Crystal Growth

2001 IAMS International Seminar　130-137　2000
Heat and mass transfer during CZ Crystal growth : From atomic scale to macro scale

Second International School on Crystal Growth Technology　122-144　2000
Dislocation, Crystal-Melt Interface and Melting of Silicon

Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials　561-564　2000
Oxygen distribution in Silicon Melt under Inhomogeneous Transverse Magnetic Fields

Third International Work Shop on Modeling in Crystal Growth　11-12　2000
An in-situ observation of dislocation and crystal-melt interface during the melting silicon

6th International Work shop on BIAMS　55　2000
Heat and mass transfer during CZ crystal growth : From atomic scale to macro scale

Second International School on Crystal Growth Technology (ISCGT-2)　(24-29)　122-144　2000
Application of various magnetic fields for the melt in a Czochralski crystal growing system(共著)

20th International Congress of Theoretical and Applied Mechanics (ICTAM 2000), Chicago, Aug.　2000
Heat and mass transfer in Czochralski silicon crystal growth under magnetic fields

20th International Congress of Theoretical and Applied Mechanics (ICTAM 2000), Chicago, Aug.　2000
The shape of solid-melt interface estimated from in-situ X-ray topograph observation(共著)

Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface and Interface Dynamics, March 2-3, 2000, Tsukuba　95-100　2000
Crucible and crystal rotation effects on oxygen distribution at an interface between solid and liquid of silicon under transverse magnetic fields

Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface and Interface Dynamics, March 2-3, 2000, Tsukuba　89-94　2000
Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon

YR Wang, K Kakimoto

JOURNAL OF CRYSTAL GROWTH　208　(1-4)　303-312　2000/01

DOI： 10.1016/S0022-0248(99)00406-6 　

ISSN： 0022-0248
Transient three-dimensional flow characteristics of Si melt in a Czochralski configuration under a cusp-shaped magnetic field

YC Won, K Kakimoto, H Ozoe

NUMERICAL HEAT TRANSFER PART A-APPLICATIONS　36　(6)　551-561　1999/11

DOI： 10.1080/104077899274561 　

ISSN： 1040-7782
Report of Germany-Japan-Poland (GJP) Crystal Growth Meeting(Opinions, Reports and Essay)

Kakimoto Koichi, Imaeda Minoru

Journal of the Japanese Association of Crystal Growth　26　(3)　156-157　1999/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Dislocation effect on crystal-melt interface : an X-ray topography study on the melting of silicon

WANG Yuren, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　26　(2)　141-141　1999/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Oxygen transport mechanism in Si melt under transverse magnetic fields

KAKIMOTO Koichi, OZOE Hiroyuki

Journal of the Japanese Association of Crystal Growth　26　(2)　135-135　1999/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Transport mechanism of oxygen in silicon melt under transverse magnetic fields was clarified using three-dimensional and time-dependent calculation. The calculation clarified the following results. 1) Oxygen in grown crystals is dissociated from side wall of a crucible. 2) Oxygen which was dissolved from side wall of a crucible is transferred parallel to magnetic fields. 3) Oxygen is incorporated from a region which settled parallel to magnetic fields to solid-liquid interface.
29p-N-3 Effects of external force on crystal growth

KAKIMOTO Koichi

Meeting abstracts of the Physical Society of Japan　54　(1)　91-91　1999/03/15
Publisher: The Physical Society of Japan (JPS)
ISSN： 1342-8349
Molecular dynamics simulation of oxygen in silicon melt

K Kakimoto, S Kikuchi, H Ozoe

JOURNAL OF CRYSTAL GROWTH　198　(Pt.1)　114-119　1999/03

DOI： 10.1016/S0022-0248(98)01115-4 　

ISSN： 0022-0248
Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation

M Watanabe, KW Yi, T Hibiya, K Kakimoto

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS　38　(1-4)　215-238　1999

DOI： 10.1016/S0960-8974(99)00013-3 　

ISSN： 0960-8974
Transport Mechanism of Point Defects in Silicon Crystals estimated by Molecular Dynamics

KAKIMOTO Koichi, UMEHARA Takeshi, OZOE Hiroyuki

The reports of Institute of Advanced Material Study Kyushu University　13　(2)　87-91　1999
Publisher: Kyushu University
DOI： 10.15017/7913 　

ISSN： 0914-3793

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Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried out to investigate diffusion mechanism and coefficients of vacancy and self-interstitial atoms. Pressure dependence of diffusion coefficients of the point defects is not significant, although temperature dependence is remarkably large. Large deformation of lattice was observed in an interstitial case, while small lattice distortion was obtained in a vacancy case.
Cz結晶成長融液へのZ軸磁場印加効果(共著)

電磁力を利用した材料プロセッシングの新展開　221-226　1999
Macroscopic and microscopic mass transfer in silicon czochralski method

Korean Association of Crystal Growth　9　(4)　381-383　1999
The effect of axial magnetic field on the melt oF Czochralski crystal growth

New Advancement in Electromagnetic Processing of Materials)　221-226　1999
Melt flow in Czochralski crystal growth system-From macro to micro-

Crystal Growth Meeting Germany-Japan-Poland　24　1999
One-sided natural and mixed convection computed for liquid metal in a Czochralski configuration(共著)

5th ASME/JSME Joint Thermal Eng. Conf.　1999
Transient three-dimensional numerical computation for silicon melt under a cusp-shaped magnetic field(共著)

5th ASEME/JSME Joint Thermal Eng. Conf.　1999
Rayleigh-Benard oscillatory natural convection of liquid gallium heated from below

Y Yamanaka, K Kakimoto, H Ozoe, SW Churchill

CHEMICAL ENGINEERING JOURNAL　71　(3)　201-205　1998/12

DOI： 10.1016/S1385-8947(98)00100-4 　

ISSN： 1385-8947
Standing-oscillatory natural convection computed for molten silicon in Czochralski configuration

H Tomonari, M Iwamoto, K Kakimoto, H Ozoe, K Suzuki, T Fukuda

CHEMICAL ENGINEERING JOURNAL　71　(3)　191-200　1998/12

DOI： 10.1016/S1385-8947(98)00115-6 　

ISSN： 1385-8947
Numerical study of natural convection in Czochralski crystallization

XB Wu, K Kakimoto, H Ozoe, ZY Guo

CHEMICAL ENGINEERING JOURNAL　71　(3)　183-189　1998/12

DOI： 10.1016/S1385-8947(98)00114-4 　

ISSN： 1385-8947
Physical properties of silicon analyzed by molecular dynamics simulation

KAKIMOTO K., SUENAGA H., OZOE H.

Journal of the Japanese Association of Crystal Growth　25　(3)　A76　1998/07
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Molecular dynamics simulation for silicon was carried out with a constraint of constant temperature and pressure. An Andersen' s algorithm was employed to obtain constant pressure condition of the system. A relationship of calculated pressure and volume of the system can express experimental volume compressibility of actual solid silicon. Negative pressure to the system can be applied in a calculation.
Segregation of oxygen at a solid/liquid interface in silicon

K Kakimoto, H Ozoe

JOURNAL OF THE ELECTROCHEMICAL SOCIETY　145　(5)　1692-1695　1998/05

DOI： 10.1149/1.1838541 　

ISSN： 0013-4651
Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket

S Nakamura, T Hibiya, K Kakimoto, N Imaishi, S Nishizawa, A Hirata, K Mukai, S Yoda, TS Morita

JOURNAL OF CRYSTAL GROWTH　186　(1-2)　85-94　1998/03

DOI： 10.1016/S0022-0248(97)00440-5 　

ISSN： 0022-0248
Heat and mass transfer during crystal growth

K Kakimoto, H Ozoe

COMPUTATIONAL MATERIALS SCIENCE　10　(1-4)　127-133　1998/02

DOI： 10.1016/S0927-0256(97)00090-6 　

ISSN： 0927-0256

eISSN： 1879-0801
等温等圧下におけるシリコンの物性のシミュレーション(共著)

九州大学機能物質科学研究所報告　12　(1)　7-10　1998
Visualization of the heat and mass transfer as well as the melt convection under a cusp-shaped megnetic field(共著)

The Eleventh Symposium on Chemical Engineering　327-328　1998
Heat and mass transfer in silicon melt under magnetic fields

First International School on Crystal Growth Technology　172-186　1998
Numerical calculation of natural and mixed convection in a Czochralski crucible under transverse magnetic fields

M Akamatsu, K Kakimoto, H Ozoe

HEAT TRANSFER 1998, VOL 3　3　239-244　1998
Physical properties of silicon estimated by molecular dynamics under a condition of constant temperature and pressure

KAKIMOTO Koichi, SUENAGA Hidetoshi, OZOE Hiroyuki

The reports of Institute of Advanced Material Study Kyushu University　12　(1)　7-10　1998
Publisher: Kyushu University
DOI： 10.15017/7887 　

ISSN： 0914-3793

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Molecular dynamics simulation was carried out to estimate volume expansion coefficients and compressibility of solid and liquid silicon. The numerical simulation employed constant temperature and pressure algorithms based on Andersen's method. Stillinger-Weber potential was used as a model potential. Calculated result shows no anomaly of density in the melt near the melting point. Estimated thermal-expansion coefficients of the solid and the melt are 1.4x10^<-5>K^<-1> and 0.4x10^<-4> K^<-1>, respectively. Calculated compressibility of the solid and the melt is almost identical to experimental data.
Molecular dynamics simulation of oxygen in silicon melt(共著)

The Second Symposium on Atomic-scale Surface and Interface Dynamics　85-90　1998
Transient analysis of melt flow under inhomogeneous magnetic fields(共著)

The Second Symposium on Atomic-scale Surface and Interface Dynamics　57-62　1998
Numerical computation for the secondary convection in a Czochralski crystal growing system with a rotating crucible and a static crystal rod

J. of material processing and manufacturing science,　151　(1)　329　1998
Sensitivity of oxygen sensors in silicon melt to temperature fluctuation

K Kakimoto, H Noguchi, M Eguchi

JOURNAL OF THE ELECTROCHEMICAL SOCIETY　144　(11)　4045-4049　1997/11

DOI： 10.1149/1.1838133 　

ISSN： 0013-4651
Effect of Oxygen and Temperature on the Surface Tension of Molten Silicon

NIU Zhenggang, MUKAI Kusuhiro, SHIRAISHI Yutaka, HIBIYA Taketoshi, KAKIMOTO Koichi, KOYAMA Masato

Journal of the Japanese Association of Crystal Growth　24　(4)　369-378　1997/10/10
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Dependence of surface tension of molten silicon on temperature, oxygen partial pressure in ambient argon gas atmosphere and oxygen concentration in molten silicon have been determined at temperatures from 1693 K to 1773 K and in the range of oxygen partial pressure from 4×10^<-22> MPa to 6×10^<-19> MPa by sessile drop method under precisely controlled oxygen partial pressure using oxygen sensor which was composed of solid electrolytes, Zr0_2・CaO. The surface tension steeply decreases with increasing the oxygen partial pressure. The extent of the surface tension reduction decreases with increasing temperature. Relations between the surface tension and the oxygen partial pressure and oxygen concentraton in the silicon melt are fairly described with Szyskowski's equation. The temperature coefficient of the surface tension is minus and the absolute value of the temperature coefficient decreases with increasing the oxygen partial pressure. Absolute value of the temperature coefficient at constant oxygen partial pressure is smaller than that at constant oxygen concentration in the silicon melt. The above oxygen dependence of temperature coefficient of the surface tension are fairly described with the equations which were derived thermodynamically based on the assumption of the oxygen equilibrium between gas and molten silicon and the equilibrium of oxygen adsorption on the surface of molten silicon.
Use of an inhomogeneous magnetic field for silicon crystal growth

K Kakimoto, M Eguchi, H Ozoe

JOURNAL OF CRYSTAL GROWTH　180　(3-4)　442-449　1997/10

DOI： 10.1016/S0022-0248(97)00239-X 　

ISSN： 0022-0248
Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth

M Watanabe, K Kakimoto, M Eguchi, T Hibiya

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　36　(10)　6181-6186　1997/10

DOI： 10.1143/JJAP.36.6181 　

ISSN： 0021-4922
Preface for Special Issue on "Mass and Heat Transfer during Crystal Growth"

KITAMURA Masao, KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　24　(3)　302-302　1997/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Magnetic Field Effect on Heat and Mass Transfer during Crystal Growth

KAKIMOTO Koichi, OZOE Hiroyuki

Journal of the Japanese Association of Crystal Growth　24　(3)　311-316　1997/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Recent progress of magnetic field effects on melt convecion during single crystal growth was reviewed. A report on enhancement of flow velocity near walls was introduced, although magnetic fields have been accepted to reduce flow velocity of metallic melts. Mechanisms how the melt flow suppresses, and instability of melt flow under vertical magnetic fields were also reviewed.
Molecular dynamics simulation of oxygen in silicon

KAKIMOTO Koichi, KIKUCHI Shin, OZOE Hiroyuki

Journal of the Japanese Association of Crystal Growth　24　(2)　91-91　1997/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Molecular dynamics simulation of oxygen in silicon was carried out to study local deformation near oxygen atom. The analysis estimated that these values of equilibrium segregation coefficient of oxygen in silicon and diffusion constant of oxygen in silicon melt are from 0.38 to 0.8 and l0_<-4>cm^2/sec, respectively.
Micro-segregation of oxygen at a solid-liquid interface in silicon

KAKIMOTO Koichi, OZOE Hiroyuki

Journal of the Japanese Association of Crystal Growth　24　(2)　82-82　1997/07/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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The incorporation of oxygen into silicon single crystals from the melt is examined in terms of an experiment and a model on a transient solidification. A transient analysis is proposed to obtain equilibrium segregation coefficient of oxygen in silicon and diffusion constant of oxygen in the melt almost independently. The analysis estimated these values of equilibrium segregation coefficient of oxygen in silicon and diffusion constant of oxygen in silicon melt.
Fundamental of Nucleation and Step Instability

KAKIMOTO Koichi

Journal of the Japanese Association of Crystal Growth　24　(1)　10-10　1997/03/25
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Temperature Fluctuations and Flow Structure of Marangoni Convection in a Liquid Bridge of Molten Silicon under Microgravity

S. Nakamura, T. Hibiya, K. Kakimoto, N. Imaishi, S. Nishizawa, A. Hirata, K. Mukai, S.Yoda, T. J. Morita

Joint Xth European and VIth Russian Symposium on Physical Sciences in Microgravity　1997
Measurement of Temperature Fluctuations in Marangoni Convection in a Half-zone Silicon Melt on Board the TR-IA-4 Rocket

S. Nakamura, T. Hibiya, K. Kakimoto, N. Imaishi, S. Nishizawa, A. Hirata, K. Mukai, S. Yoda, T. J. Morita

14　(1)　60-66　1997
Flow Instability in Metallic Melt of Silicon.

Kakimoto Koichi

Butsuri　52　(2)　90-96　1997
Publisher: The Physical Society of Japan
DOI： 10.11316/butsuri1946.52.90 　

ISSN： 0029-0181
Effect of Oxygen Partial Pressure on the Surface Tension of Molten Silicon

NIU Zhenggang, MUKAI Kusuhiro, SHIRAISHI Yutaka, HIBIYA Taketoshi, KAKIMOTO Koichi, KOYAMA Masato

Journal of the Japanese Association of Crystal Growth　23　(5)　374-381　1996/12/01
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Experiments were conducted in order to obtain the relation between surface tension of molten and oxygen partial pressure. Clarifyiyng the relation holds a key for understanding the Marangoni convection of molten silicon in a Czochralski (CZ) system.Measurements of surface tension and density of molten silicon were performed by the sessile drop method using BN substrate under argon atmosphere at 1693 K. Oxygen partial pressure Po_2 of argon gas was controlled below the equilibrium Po_2, that was, Po_2,_<sat>, of S1O_2 by the aid of argon gas purifier and tightly sealed furnace made of double alumina tubes. Po_2 was determined with oxygen sensor of solid electrolytes, ZrO_2・CaO. Surface tension of molten silicon was 813 mN/m at 1693 K under a condition of Po_2=2.58×l0^<-22> MPa. The surface tension remarkably decreases with increasing Po_2 up to Po_2,_<sat> of SiO_2 at 1693 K. However, above Po_2,_<sat>, the surface tension keeps almost constant with incrcasing Po_2.
Temperature fluctuations and distribution of the Marangoni flow in a molten silicon bridge

NAKAMURA Shin, KAKIMOTO Koichi, HIBIYA Taketoshi, IMAISHI Nobuyuki, NISHIZAWA Shin-ichi, HIRATA Akira, MUKAI Kusuhiro, YODA Shin-ichi, MORITA T. S.

13　(4)　297-297　1996/10/31

ISSN： 0915-3616
Temperature Osicllation ad Flow Mode of Marangoni Convection of Molten Silicon under Microgravity

HIBIYA T., NAKAMURA S., KAKIMOTO K., IMAISHI N., NISHIZAWA S., HIRATA A., MUKAI K., MATSUI K., YOKOTA T., YODA S., MORITA T.

Journal of the Japanese Association of Crystal Growth　23　(3)　139-139　1996/07/10
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
MARANGONI FLOW AND THERMOPHYSICAL PROPERTIES OF MOLTEN SEMICONDUCTORS(Abstract from International Seminar on Manufacturing of Advanced Materials)

HIBIYA Taketoshi, NAKAMURA Shin, KAKIMOTO Koichi

The reports of Institute of Advanced Material Study Kyushu University　9　(2)　182-183　1996/03/28
Publisher: Kyushu University
ISSN： 0914-3793
Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

KW Yi, K Kakimoto, ZG Niu, M Eguchi, H Noguchi, S Nakamura, K Mukai

JOURNAL OF THE ELECTROCHEMICAL SOCIETY　143　(2)　722-725　1996/02

DOI： 10.1149/1.1836508 　

ISSN： 0013-4651
Temperature Oscillation Measurement of Marangoni Flow in Molten Silicon Column using HTF-II under Microgravity on Board the NASDA TR-IA Rocket

T. Hibiya, S. Nakamura, K. Kakimoto, N. Imaishi, S. Nishizawa, A. Hirata, K. Mukai

Second European Symposium: Fluids in Space Proceedings, Second European Symposium "Fluids in Space" Ed. by A. Viviani　231-237　1996
Fundamentals of technology on bulk crystal growth

KAKIMOTO Koichi

OYOBUTURI　65　(7)　704-709　1996
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/oubutsu1932.65.704 　

ISSN： 0369-8009
Oxygen transport mechanism in silicon melt

Proceedings of the 2nd international symposium on Advanced Science and Technology of Silicon Materials　78-84　1996
Numerical simulation for the convection of silicon melt under cusp-shaped magnetic fields

Proceeding of the ninth symposium on chemical engineering　33-34　1996
Use of inhomogeneous magnetic fields

Abstract of 2nd International workshop on Modelling in Crystal Growth　21-23　1996
Use of magnetic fields in crystal growth from semiconductor melts

K Kakimoto, KW Yi

PHYSICA B　216　(3-4)　406-408　1996/01

DOI： 10.1016/0921-4526(95)00529-3 　

ISSN： 0921-4526
Temperature fluctuation measurement of Marangoni convection in a molten silicon on board the TR-IA-4 rocket

NAKAMURA Shin, KAKIMOTO Koichi, HIBIYA Taketoshi, NISHIZAWA Shin-ichi, HIRATA Akira, IMAISHI Nobuyuki, ADACHI Satoshi, YODA Shin-ichi, NAKAMURA Tomihisa, SAMESHIMA Hiroto

12　(4)　336-336　1995/10/31

ISSN： 0915-3616
MATERIALS SCIENCE-EDUCATION IN JAPAN

H KAMIMURA, K KAKIMOTO

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING　199　(1)　15-21　1995/08

DOI： 10.1016/0921-5093(95)09903-4 　

ISSN： 0921-5093
Magnetic Field Effect of Oxygen Transport in Silicon Melt

KAKIMOTO K., YI K. -W., EGUCHI M.

Journal of the Japanese Association of Crystal Growth　22　(3)　155-155　1995/07/10
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
Measurements of Surface Tension of Molten Silicon

MUKAI K., NIU Z. G., SHIRAISHI Y., HIBIYA T., KAKIMOTO K.

Journal of the Japanese Association of Crystal Growth　22　(3)　149-149　1995/07/10
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
FLOW MODE TRANSITION AND ITS EFFECTS ON CRYSTAL-MELT INTERFACE SHAPE AND OXYGEN DISTRIBUTION FOR CZOCHRALSKI-GROWN SI SINGLE-CRYSTALS

M WATANABE, M EGUCHI, K KAKIMOTO, H ONO, S KIMURA, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　151　(3-4)　285-290　1995/06

DOI： 10.1016/0022-0248(95)00057-7 　

ISSN： 0022-0248
Convection Visualization and Temperature Fluctuation Measurement in a Molten Silicon Column

S. Nakamura, K. Kakimoto, T. Hibiya

IXth European Symposium on Gravity-Dependent in Physical Sciences "Material and Fluids under Low Gravity", Proceedings of the Conference, ed. by L. Ratke.Springer Verlag　343-349　1995
Structure of temperature and velocity fields in the Si melt of a Czochralski crystal growth system

Applied Physics Reviews, J. Appl. Phys. ,　77　1827-1842　1995
Flow visualization of molten silicon in Si colums

Proceeding of the Ixth European Symposium on Gravity-Dependent Phenomena in Physical Sciences　343-349　1995
Heat and mass transfer in semiconductor melts during single-crystal growth processes

Koichi Kakimoto

Journal of Applied Physics　77　(5)　1827-1842　1995

DOI： 10.1063/1.358882 　

ISSN： 0021-8979
Molten silicon convection affects oxygen concentration in silicon crystals?

Proceedings of International Confefence of Crystal Growth XI　155　1995
Flow visualization of molten silicon in Si columns

Proceedings on International Conference on Microgravity　77-84　1995
Effects of Temperature and Oxygen on the Surface Tension of Molten Silicon

Proceedings of 4th Asian Thermophysical Properties Conference　187-191　1995
Correlation of temperature fluctuation and striations in silicon crystals

J. Crystal Growth　151　187-191　1995
Molecular dynamic simulation of the diffusion constant and viscosity in silicon melt

J. Appl. Phys　77　4122-4124　1995
SPOKE PATTERNS ON MOLTEN SILICON IN CZOCHRALSKI SYSTEM

KW YI, K KAKIMOTO, M EGUCHI, M WATANABE, T SHYO, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　144　(1-2)　20-28　1994/11

DOI： 10.1016/0022-0248(94)90005-1 　

ISSN： 0022-0248
A NUMERICAL STUDY OF THE EFFECT OF CORIOLIS-FORCE ON THE FLUID-FLOW AND HEAT-TRANSFER DUE TO WIRE HEATING ON CENTRIFUGE

KW YI, S NAKAMURA, T HIBIYA, K KAKIMOTO

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER　37　(12)　1773-1781　1994/08

DOI： 10.1016/0017-9310(94)90066-3 　

ISSN： 0017-9310
融液対流と結晶中の不純物濃度分分布との相関 : 融液成長(シリコン関連) I

柿本浩一, 庄俊之, 江口実

日本結晶成長学会誌　21　(3)　228-228　1994/07/05
Publisher: 日本結晶成長学会
ISSN： 0385-6275
シリコンメルト液柱内の対流構造 : 融液成長(シリコン関連) I

中村新, 柿本浩一, 日比谷孟俊

日本結晶成長学会誌　21　(3)　229-229　1994/07/05
Publisher: 日本結晶成長学会
ISSN： 0385-6275
Flow Instabilities during Crystal Growth(<Special Issue> Instability during Crystal Growth)

Kakimoto Koichi, Yi Kyung-Woo

Journal of the Japanese Association of Crystal Growth　21　(2)　p174-179　1994/06
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Semiconductor and oxide crystals for electronic and optical devices are grown from melts Within a thermal and rotating fields. The both fields create melt flow in the melt. The present paper reports three-dimensional structure of molten silicon convection which is observesd by using X-ray radiography method. Additionally, three-dimensional numerical-simulation by using a super computer is also introduced.
CORIOLIS EFFECT ON HEAT TRANSFER EXPERIMENT USING HOT-WIRE TECHNIQUE ON CENTRIFUGE

T HIBIYA, S NAKAMURA, KW YI, K KAKIMOTO

MATERIALS PROCESSING IN HIGH GRAVITY　171-179　1994
The Effects of Vertical Magnetic Field on the Fluid Flow of Si Melt and on the concentration Profile of Oxygen in the Czochralski System

K.W.Yi, K. Kakimoto, T. Hibiya

Eelctrochemical Society Spring Meeting　1994
Change in Velocity in Silicon Melt of the Czochralski (CZ) Process in a Vertical Magnetic Field

K-W. Yi, M. Watanabe, M. Eguchi, K. Kakimoto, T. Hibiya

Japanese Journal of Applied Physics　33　(4A)　L487-L490　1994
Publisher: The Japan Society of Applied Physics
DOI： 10.1143/jjap.33.L487 　

ISSN： 0021-4922 1347-4065

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The influence of a magnetic field on the velociry of molten silicon has been characterized both theoretically and experimentally. The velocity decrease observed by X-ray radiography in the magnetic field is in good agreement with the results obtained by numerical modelling. It is found that the rate of decrease in velocity in a vertical magnetic field is well presented using the magnetic number rather than the Hartmann number. Accordingly, the analytical expression using the square of the magnetic number, M, well describes the velociry changes as v/v0=(1+M2/4)1/2-M/2, for experimental as well as numerically calculated data.
3-D structure of molten silicon flow

Proceedings of 7th Korean Association of Crystal Growth　13-14　1994
Change of the velocities in the silicon melt of CZ process under the vertical magnetic field

J. Crystal Growth　33　L487-L490　1994
DOUBLE-BEAM X-RAY RADIOGRAPHY SYSTEM FOR 3-DIMENSIONAL FLOW VISUALIZATION OF MOLTEN SILICON CONVECTION

M WATANABE, M EGUCHI, K KAKIMOTO, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　133　(1-2)　23-28　1993/10

DOI： 10.1016/0022-0248(93)90099-I 　

ISSN： 0022-0248
27pA3 The change of the velocities in the Si melt of Czochralski process under the vertical magnetic field

[Author not found]

Journal of the Japanese Association of Crystal Growth　20　(2)　69-69　1993/07/10
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275
TEMPERATURE-DEPENDENCE STUDIES OF THE LIQUID STRUCTURE OF GASB BY NEUTRON-DIFFRACTION

J MIZUKI, K KAKIMOTO, M MISAWA, T FUKUNAGA, N WATANABE

JOURNAL OF PHYSICS-CONDENSED MATTER　5　(21)　3391-3396　1993/05

DOI： 10.1088/0953-8984/5/21/001 　

ISSN： 0953-8984
THE BAROCLINIC FLOW INSTABILITY IN ROTATING SILICON MELT

M WATANABE, M EGUCHI, K KAKIMOTO, Y BAROS, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　128　(1-4)　288-292　1993/03

DOI： 10.1016/0022-0248(93)90335-T 　

ISSN： 0022-0248
シリコン単結晶製造プロセスにおけるマランゴニ効果

金属学会誌マテリア　34　420　1993
Melt Flow during Silicon Crystal Growth

KAKIMOTO Koichi, WATANABE Masahito, EGUCHI Minoru, HIBIYA Taketoshi

13　(1)　5-15　1993

DOI： 10.11426/nagare1982.13.5 　

ISSN： 0286-3154 2185-4912
半導体材料における融液の構造と性質

セラミックス　28　1233　1993
Coriolis effect on heat and mass transfer experiment using hot wire technique on centrifuge

Proceedings of 2nd International workshop on materials processing in high-gravity　35-40　1993
Flow instability of the melt during Czochralski Si crystal growth : dependence on growth conditions ; a numerical simulation study

J. Crystal Growth　139　197-205　1993
ORDERED STRUCTURE IN NON-AXISYMMETRICAL FLOW OF SILICON MELT CONVECTION

K KAKIMOTO, M WATANABE, M EGUCHI, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　126　(2-3)　435-440　1993/01

ISSN： 0022-0248
THE CORIOLIS-FORCE EFFECT ON MOLTEN SILICON CONVECTION IN A ROTATING CRUCIBLE

K KAKIMOTO, M WATANABE, M EGUCHI, T HIBIYA

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER　35　(10)　2551-2555　1992/10

DOI： 10.1016/0017-9310(92)90096-B 　

ISSN： 0017-9310
数値計算によるSi融液中の熱と物質の輸送現象の理解 : 融液成長VI

柿本浩一, 渡辺匡人, 江口実, 日比谷孟俊

日本結晶成長学会誌　19　(1)　127-127　1992/06/25
Publisher: 日本結晶成長学会
ISSN： 0385-6275
Si融液対流と育成結晶中のストリエーションとの相関 : 融液成長VI

渡辺匡人, 江口実, 柿本浩一, 木村滋, 小野春彦, 日比谷孟俊

日本結晶成長学会誌　19　(1)　126-126　1992/06/25
Publisher: 日本結晶成長学会
ISSN： 0385-6275
Three-Dimensional Structure of Molten Silicon Convection during Czochralski Crystal Growth(<Special Issue>)Bulk Crystal Growth(II))

Watanabe Masahito, Kakimoto Koichi, Eguchi Minoru, Hibiya Taketoshi

Journal of the Japanese Association of Crystal Growth　18　(4)　p447-454　1992/06
Publisher: The Japanese Association for Crystal Growth (JACG)
ISSN： 0385-6275

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Direct observation on molten silicon convection during Czochralski crystal growth was carried out using doublebeam X-ray radiography system with solid tracer method. The observed particle path had a torus like pattern for crystal and crucible rotation rates as +1 and -1 rpm, respectively. The root-mean-square velocity for one specific tracer was 21 mm/sec. Moreover, it is found that a flow field with larger azimuthal velocity than the rotational velocity of the crucible exists just beneath the crystal, while the flow field with smaller or negative azimuthal velocity exists near the crucible wall. Numerical simulation containing fluid flow, heat conduction and heat exchange by radiation has been performed using the geometry of the same as furnace used for experiment. The calculated flow velocity and particle path were almost the same as the experimental results. It has also become clear from a comparison of flow-velocity field between experimental and calculated results that the modulation of azimuthal-flow field is caused by the Colioris force.
In-situ Observation of Surface Tension Driven Flow at Surface of Molten silicon

K. Kakimoto, M. Watanabe, M. Eguchi, T. Hibiya

10th International Conference on Crystal Growth　1992
CONVECTION AND THERMOPHYSICAL PROPERTIES OF MOLTEN SEMICONDUCTORS

K KAKIMOTO, S NAKAMURA, T HIBIYA

HEAT AND MASS TRANSFER IN MATERIALS PROCESSING　659-671　1992
NUMERICAL-SIMULATION OF MOLTEN SILICON FLOW - COMPARISON WITH EXPERIMENT

K KAKIMOTO, P NICODEME, M LECOMTE, F DUPRET, MJ CROCHET

JOURNAL OF CRYSTAL GROWTH　114　(4)　715-725　1991/12

DOI： 10.1016/0022-0248(91)90421-Z 　

ISSN： 0022-0248
Si融液対流の三次元解析 : 軸対称流について : 融液成長V

渡辺匡人, 江口実, 柿本浩一, 荒井正之, 日比谷孟俊

日本結晶成長学会誌　18　(1)　126-126　1991/07/25
Publisher: 日本結晶成長学会
ISSN： 0385-6275
Three-Dimensional Visualization of Molten Silicon Convection

M. Watanabe, M. Eguchi, K. Kakimoto, T. Hibiya

Proceedings of the Conference, Experimental and Numerical Visualization The Winter Annual Meeting of the American Society of Mechanical Engineers　128　225-260　1991
In-situ Monitoring of Dopant Concentration Variation in a Silicon Melt during Czochralski Growth

K. Kakimoto, M. Eguchi, T. Hibiya

Journal of Crystal Growth　112　(4)　819-823　1991

DOI： 10.1016/0022-0248(91)90140-Z 　

ISSN： 0022-0248
中性子散乱による溶融GaSbの微細構造と粘性係数との関係 : 融液成長IV

柿本浩一, 水木純一郎, 福永俊晴, 三沢正勝, 渡辺昇

日本結晶成長学会誌　18　(1)　121-121　1991
Publisher: 日本結晶成長学会
ISSN： 0385-6275
Three-dimensional observation of molten silicon convection

WATANABE Masahito, EGUCHI Minnoru, KAKIMOTO Koichi, HIBIYA Taketoshi

OYOBUTURI　60　(8)　799-803　1991
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/oubutsu1932.60.799 　

ISSN： 0369-8009
In-situ observation of molten silicon convection was perfrmed by X-ray radiography.

KAKIMOTO Koichi, EGUCHI Minoru, WATANABE Masahito, HIBIYA Taketoshi

X-RAYS　33　(1)　21-26　1991
Publisher: The Crystallographic Society of Japan
DOI： 10.5940/jcrsj.33.21 　

ISSN： 0369-4585 1884-5576

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Condition of crystal and crucible rotation rates which offers unstable flow was revealed. It has been conventionally reported that iso-rotational condition of crystal and crucible has been thought to make stable flow from numerical simulation with assumption of axisymmetric and steady flow. However, it has become clear that the iso-rotational condition is not able to make stable flow from the present experiment. We also made it clear that the volume expansion coefficient of molten silicon should be order of 10^-4 K while two different values of the constant such as 1.43×10^-4 and 1.43×10^-5 K had been previously reported.
Three-dimensional visualization of molten silicon convection

ASME FED　128　255-259　1991
Direct observation and numerical simulation of molten silicon convection

Proceedings of symposium on advanced science and technology of silicon materials　159-161　1991
ダブルビームX線透視法によるCzSi単結晶育成時の融液対流三次元可視化観察 : 融液成長IV

渡辺匡人, 江口実, 柿本浩一, 日比谷孟俊

日本結晶成長学会誌　17　(1)　64-64　1990/07/20
Publisher: 日本結晶成長学会
ISSN： 0385-6275
FLOW INSTABILITY OF MOLTEN SILICON IN THE CZOCHRALSKI CONFIGURATION

K KAKIMOTO, M EGUCHI, H WATANABE, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　102　(1-2)　16-20　1990/04

DOI： 10.1016/0022-0248(90)90884-N 　

ISSN： 0022-0248
INSITU OBSERVATION OF IMPURITY DIFFUSION BOUNDARY-LAYER IN SILICON CZOCHRALSKI GROWTH

K KAKIMOTO, M EGUCHI, H WATANABE, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　99　(1-4)　665-669　1990/01

DOI： 10.1016/S0022-0248(08)80003-6 　

ISSN： 0022-0248
KINETIC-STUDY BY VISCOSITY MEASUREMENTS ON DIRECT SYNTHESIS OF GALLIUM ANTIMONIDE

K KAKIMOTO, T HIBIYA

JOURNAL OF APPLIED PHYSICS　66　(9)　4181-4183　1989/11

DOI： 10.1063/1.344003 　

ISSN： 0021-8979
NATURAL AND FORCED-CONVECTION OF MOLTEN SILICON DURING CZOCHRALSKI SINGLE-CRYSTAL GROWTH

K KAKIMOTO, M EGUCHI, H WATANABE, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　94　(2)　412-420　1989/02

DOI： 10.1016/0022-0248(89)90016-X 　

ISSN： 0022-0248
Direct observation of Melt Convection during Czochralski Single Crystal Growth

K. Kakimoto, M. Eguchi, H. Watanabe, T. Hibiya

International Conference on Physicochemical Hydrodynamics　1989
In-situ observation of impurity diffusion boundary layer in meniscus during silicon Cz growth

Abstracts of The 9th International Conference on Crystal Growth　231　1989
X線透視法によるシリコン融体の対流直接観測 : 実験とシミュレーションとの対応

柿本浩一, 江口実, 渡辺久夫, 日比谷孟俊

日本結晶成長学会誌　15　(1)　24-24　1988/07/10
Publisher: 日本結晶成長学会
ISSN： 0385-6275
DIRECT OBSERVATION BY X-RAY RADIOGRAPHY OF CONVECTION OF MOLTEN SILICON IN THE CZOCHRALSKI GROWTH METHOD

K KAKIMOTO, M EGUCHI, H WATANABE, T HIBIYA

JOURNAL OF CRYSTAL GROWTH　88　(3)　365-370　1988/05

DOI： 10.1016/0022-0248(88)90009-7 　

ISSN： 0022-0248
Composition Dependence of Viscosity for Molten Ga1-xAsx ( 0.0≦x≦0.53)

K. Kakimoto, T. Hibiya

Applied Physics Letters　52　(19)　1576-1577　1988

DOI： 10.1063/1.99085 　

ISSN： 0003-6951
In-situ Observation of Solid Liquid Interface Shape by X-Ray Radiography during Silicon Single Crystal Growth

K. Kakimoto, M. Eguchi, H. Watanabe, T. Hibiya

Journal of Crystal Growth　91　(4)　509-514　1988

DOI： 10.1016/0022-0248(88)90118-2 　

ISSN： 0022-0248
Direct Observation of Molten Silicon Convection by X-Ray Radiography

KAKIMOTO Koichi, EGUCHI Minoru, WATANABE Hisao, HIBIYA Taketoshi

OYOBUTURI　58　(9)　1334-1339　1988
Publisher: The Japan Society of Applied Physics
DOI： 10.11470/oubutsu1932.58.1334 　

ISSN： 0369-8009
融液半導体からの結晶成長における流れの直接観察

日本結晶成長学会誌　15　271　1988

DOI： 10.19009/jjacg.15.2_217 　
溶融GaAsの粘性係数 : 組成依存性 : 融液成長I

柿本浩一, 日比谷孟俊

日本結晶成長学会誌　14　(1)　2-2　1987/07/10
Publisher: 日本結晶成長学会
ISSN： 0385-6275
Temperature dependence of viscosity of moltem GaAs by an oscillating cup method

Appl. Phys. Letters　50　(18)　1249-1250　1987

DOI： 10.1063/1.97924 　

ISSN： 0003-6951
TEMPERATURE-FLUCTUATION IN MOLTEN GAAS

K KAKIMOTO, H WATANABE, T HIBIYA

JOURNAL OF THE ELECTROCHEMICAL SOCIETY　133　(12)　2649-2652　1986/12

DOI： 10.1149/1.2108496 　

ISSN： 0013-4651
溶融化合物半導体の熱的挙動 (温度変動と無次元数との対比)

柿本浩一, 渡辺久夫, 日比谷孟俊

日本結晶成長学会誌　13　(1)　16-16　1986/07/10
Publisher: 日本結晶成長学会
ISSN： 0385-6275
CLUSTERING PARAMETER AND INTERNAL-STRESS IN III-V-TERNARY ALLOYS

K KAKIMOTO, T KATODA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　24　(8)　1022-1029　1985

ISSN： 0021-4922
Direct Observation by X-Ray Radiography of Convection of Boric Oxide in the GaAs Liquid Encapsulated Czochralski Growth

K. Kakimoto, M. Eguchi, H. Watanabe, T. Hibiya

Journal of Crystal Growth　94　(2)　405-411　1984

DOI： 10.1016/0022-0248(89)90015-8 　

ISSN： 0022-0248
TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS-SECTIONS AT SURFACE-STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY

T KATSUBE, K KAKIMOTO, T IKOMA

JOURNAL OF APPLIED PHYSICS　52　(5)　3504-3508　1981

DOI： 10.1063/1.329128 　

ISSN： 0021-8979
The dislocation behaviour in the vicinity of molten zone : An X-ray topography study of the melting of silicon(共著)

Eleventh American Conference on Crystal Growth & Epitaxy(ACCGE-11)　106

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Books and Other Publications 19

丸善実験物理学講座4試料作製技術(共著)

2結晶成長の基礎　2000
現代エレクトロニクスを支える単結晶成長技術(共著)

2.2融液内熱・物質移動解析　1999
計算力学[(]G0006[)] -電子デバイス/機器設計における計算力学の適用ー(共著)

第1章融液の熱流動シミュレーション　1999
Crystalline Silicon EDITED BY ROBERT HULL emis DATAREVEWS SERIES

Si melt convection in a crucible　1999
Computational Mechanics [(]G0006[)]

1999
Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation(共著)

Progress of Crystal Growth and Characterization of Materials. The role of magnetic fields in crystal growth　1999
The convection under an axial magnetic field in a Czochralski configuration

Advanced computational methods in heat transfer,　1998
結晶成長における熱と物質の移動の計算機シミュレーション

計算機でみる結晶成長日本結晶成長学会　1996
結晶成長と相図

結晶工学の基礎応用物理学会　1995
Flow instability during crystal growth from the melt

Progress of crystal growth and characterization　1995
融液対流とシミュレーション技術

アドバンストエレクトロニクスバルク結晶成長技術培風館　1994
結晶成長における熱と物質の輸送現象

計算機でみる結晶成長日本結晶成長学会　1994
Convection visualization and temperature fluctuations measurement in a molten silicon column

Materials and fluids under low gravity　1994
The effect of vertical magnetic field on the fluid flow of Si melt and on the concentration profile of oxygen in the Cz system

Abstract of electrochemical society meeting 1994　1994
Calculation of the intrinsic asymmetric profiles in the Si melt of the Czocharalski system using a 3-dimensional transient model

Proceedings of WCCM-III　1994
Coriolis effect on heat transfer experiment using hot-wire technique on centrifuge

Materials Processing in High Gravity, Prenum Press, New York　1994
The effect of the Coriolis force on the fluid flow in centrifuge

Proceedings of 30th National Heat Transfer Symposium of Japan　1993
Modification of heat and mass transfer in silicon melt

Proceedings of America Society of Crystal Growth　1993
Characterization of thermal instability in GaAs-AlAs and GaAs-InAs superlattices with laser Raman spectroscopy

Gallium Arsenide and Related Compounds 1984　1984

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Industrial Property Rights 16

ハイブリッドEBセルとそれを使用した成膜材料蒸発法

柿本浩一

Property Type: Patent
結晶育成装置

Property Type: Patent

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特開平05-238871
結晶育成装置用坩堝

Property Type: Patent

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特開平06-211593
単結晶育成法

Property Type: Patent

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特開平07-061893
結晶育成方法及びその装置

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特開平07-172979
結晶育成方法

Property Type: Patent

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特開平07-206582
シリコン結晶成長方法

Property Type: Patent

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特開平08-259380
結晶育成方法および結晶育成装置

Property Type: Patent

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特開平09-110580
分子動力学法の高速計算装置

Property Type: Patent

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特開平09-146921
結晶育成方法及びその装置

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特許2570162
半導体レーザ活性層温度測定装置

Property Type: Patent

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特許2707623
分子動力学法の高速計算装置

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特許2792487
結晶育成方法および結晶育成装置

Property Type: Patent

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特許2803606
単結晶育成法

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特許2827833
X線透視法による融液の対流可視化用トレーサ

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特公平06-075021
結晶育成方法

Property Type: Patent

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特公平07-033306

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Research Projects 17

融液成長の限界を超越する新規ルツボフリー成長法によるGa2O3の成長と欠陥評価

吉川彰, 柿本浩一, 赤岩和明

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 基盤研究(A)

Institution: 東北大学

2022/04/01 - 2025/03/31
Polytype Controlled SiC Single Crystal Grwoth

NISHIZAWA Shin-ichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Kyushu University

2018/04/01 - 2021/03/31

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In this study, effects of nitrogen and aluminum dopant on the SiC crystal structure and poly-type stability were investigated by DFT. With taking account of the stacking energy of additional bilayer, the carbon terminated surface as seed surface with nitrogen doped condition is the only condition of 4H single poly-type SiC growth. Under the other conditions, poly-type conversion and inclusion might be occurred.
Development of simulator of crystal growth based on multi-physics

KAKIMOTO KOICHI

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: Kyushu University

2016/04/01 - 2019/03/31

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A total pressure-controlled physical vapor transport growth method that stabilizes SiC polytype is proposed. The supersaturation of carbon during SiC growth changed as a function of the growth time due to changes in the temperature difference between the surfaces of the source and the grown crystal. Therefore, modification of the pressure as a function of growth time allowed for constant supersaturation during growth. The supersaturation was calculated based on classical thermodynamic nucleation theory using data for heat and species of Si2C and SiC2 transfer in a furnace obtained from a global model.The 4H-SiC prepared using this pressure-controlled method was more stable than that of 4H-SiC formed using the conventional constant-pressure method.
Development of quantitative analysis of defects in wide bandgap materials

Kakimoto Koichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Challenging Exploratory Research

Institution: Kyushu University

2015/04/01 - 2017/03/31

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To effectively reduce defects such as plane dislocations (BPDs) during SiC physical vapor transport growth, a three dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface and the cooling rate have been analyzed. The results show that the convexity of the growth surface is unfavorable and can cause a large multiplication of BPDs when the crystal grows. Fast cooling during the cooling process is beneficial for the reduction of BPDs because fast cooling can result in a smaller radial flux at the high-temperature region. In addition, fast cooling can reduce the generation of stacking faults during the cooling process. Therefore, to reduce BPDs and stacking faults, it is better to maintain or reduce the convexity of the growth surface and increase the cooling rate during the cooling process.
省エネ用半導体の実現に向けたマクロナノ統合結晶成長法の確立 Competitive

柿本浩一

Offer Organization: 日本学術振興会

System: 科学研究補助金

2012/04 - 2014/03
動的電場磁場を用いた新規決勝育成方法の創成 Competitive

柿本浩一

Offer Organization: 日本学術振興会

System: 科学研究補助金

2007/04 - 2009/03
電場磁場を同時に用いた対流高精度制御半導体結晶成長法の創成 Competitive

柿本浩一

Offer Organization: 日本学術振興会

System: 科学研究補助金

2002/04 - 2004/03
The effect of magnetic field on the continuous steel casting process

OZOE Hiroyuki, TAGAWA Toshio, HIRANO Hiroyuki, KAMAKURA Katsuyoshi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (B)

Institution: KYUSHU UNIVERSITY

1998 - 2001

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This is the final year of the research and research results are summarized for four years. Magnetic field is applied to the continuous steel casting process to solidify the molten steel safely. In this work, the convection of molten steel was modeled by the equation of continuity, momentum equations in the x-, y-, and z-directions and energy equation. Further more Ohm's law, conservation of electricity and Bio-Savart's law were considered. The system is composed of a rectangular box of ?x?lx2? and O.1?lx0.1? nozzle is extended into the molten steel up to 0.5?.Molten steel is blown out through the bottom of a nozzle. Four surrounding side walls are cooled isothermally and top and bottom plane is thermally insulated. Three cases of magnetic field were considered, i. e., one coil around a rectangular enclosure, two coils at the end of x-direction and two coils at the end of y-direction. Model equations were approximated by finite difference equations and solved by a HSMAC scheme. Computational region was divided into 50^3 meshes with nonuniform staggered meshes. Numerical conditions are Re= 10^4, Re_<in> = 10^3, Gr=10^7, Pr=0.025 and Ha=0, 100, 200 and 500. When there is no magnetic field, the jet fluid from nozzles hit the solidifying side walls and constitute four rolls. In the case of one electric coil, large roll cells were constituted at Ha = 100 and 200 but they were decreased at Ha = 500. In the case of x-directional two coils, at Ha = 100 and 200 the convection cells were similar to that at Ha = 0 but at Ha= 500, roll cells were limited to the upper part and the jet flow from nozzles did not reach the side walls. In the case of y-directional two coils, even at Ha = 500, jet flow from nozzle remained and reached to the side walls. From these results, a coil around an enclosure appears to be best and the x-directional two coils system is the next. However, continuous steel casting process includes many factors other than this and further study is required.
DISCUSSION OF THE EFFECT OF ROTATING MAGNETIC FIELD ON CRYSTAL GROWTH

OZOE Hiroyuki, IWAMOTO Mitsuo, KAKIMOTO Koichi

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (C)

Institution: KYUSHU UNIVERSITY

1997 - 1999

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The electronic integrated circuits have been extensively developed to materialize the information technology society. The integrated circuits became more condensed and less energy dissipasive. The silicon wafer to constitute the base plate of the integrate circuit would become much more enlarged to become 14 to 16 inches diameter to reply for the increasing demand more efficiently. The crucible for manufacturing such a large rod would become much larger and the molten liquid of silicon would become more turbulent. To manufacture a single crystal rod safely and steadily, it would be necessary to calm the convection of the melt by applying a magnetic field from outside of the furnace. In the present research program, the rotating magnetic field is applied to see its effect on the convection of the liquid metal in a vertical cylindrical crucible. However, for this purpose, a little more simplified system of a cube was at first considered. The liquid metal in a cubic enclosure is heated and cooled from opposing vertical walls with four other walls thermally insulated. Magnetic field was applied uniformly in parallel to both the hot and cold walls. At Ra = 10ィイD15ィエD1, Pr = 0.025 and Ha = 50, the average Nusselt number increased at least 5% than that without magnetic field. This contradicts to the common understanding that the magnetic field suppresses the convection and heat transfer rate (Paper 1). Then, a rotating magnetic field was studied theoretically for the liquid metal in a vertical cylinder. The numerical solution was successfully obtained for the dimensionless angular velocity Ω = 10ィイD13ィエD1 and 10ィイD14ィエD1 and Ha = 0.01 and 0.1. The maximum velocity occurred at 58% of the radius (Paper 2). Experimental approach was also carried out. However, the rotating magnetic field of static outer coil taken from a usual electric motor could not have rotated the gallium in a cylinder due to too much leakage of the magnetic field. After many trials, two coils rotating magnet successfully rotated the gallium.
STUDY ON DEFECT FORMATION IN BULK CRYSTAL FOR ELECTRONIC DEVICES

KAKIMOTO Koichi, OZOE Hiroyuki

Offer Organization: Japan Society for the Promotion of Science

System: Grants-in-Aid for Scientific Research

Category: Grant-in-Aid for Scientific Research (C)

Institution: KYUSHU UNIVERSITY

1997 - 1999

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Molecular dynamics simulation was carried out to estimate diffusion constants and mechanism of point defects such as a single vacancy and a self-interstitial atom under hydrostatic pressure. Stillinger-Weber potential was used as a model potential, which is widely accepted for modeling of silicon crystals and melts. We obtained the following results on a self-interstitial atom from the calculation. 1) Diffusion constants of self-interstitial are almost independent of pressure within a range from -50 to +50 k bar. 2) A self-interstitial atom diffuses with a formation of dumbbell structure, which is aligned in [110] direction. For single vacancy, the following were clarified. 1) Diffusion constants of vacancy are also independent of pressure within a range from -40 to +40 k bar. 2) A vacancy diffuses with a switching mechanism to nearest neighbor lattice site. Molecular dynamic simulation of an oxygen atom in silicon crystal and the melt was also carried out to obtain diffusion constants of oxygen in the melt. The simulation using mixed potential in the melt in which an oxygen atom and 216 silicon atoms were taken into account has been carried out. Vibration frequencies of oxygen and vacancy-oxygen (V-O) pair in the crystal have been calculated. Calculated frequency of oxygen and V-O pair were 1000 and 800 cmィイD1-1ィエD1, respectively, while experimental results which were obtained from Fourier transform spectra of infrared absorption (FTIR) are 1100 and 830 cmィイD1-1ィエD1, respectively. Oxygen diffusion constant was obtained in elevated temperature of 1700 K. Calculated diffusion constant of oxygen in the melt was 2x10ィイD1-4ィエD1 cmィイD12ィエD1/sec.
九州シンクロトロン放射光のエレクトロニクス応用研究に関する調査研究

黒木幸令, 日高昌則, 柿本浩一, 佐道泰造, 鶴島稔夫

Offer Organization: 日本学術振興会

System: 科学研究費助成事業

Category: 基盤研究(C)

Institution: 九州大学

1997 - 1997

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九州シンクロトロン放射光施設は、福岡県を中心として、大学、公立研究所、民間会社を含めたいわゆる第3セクター方式で計画が立案されている。そこでは分析・解析部会、微細加工部会、新素材応用部会、生命部会に分かれて研究の立案がされているが、本研究は、これらの部会を横断する立場で、付加価値の付けやすいエレクトロニクス応用について、シンクロトロン放射光の技術開発・ニーズについて調査した。まず、現在までの放射光のエレクトロニクス応用について、分析、リソグラフィ、エッチング、成膜、表面改質、LIGAという項目で文献検索を行った。反応素過程などの分析を伴う基礎研究やプロトタイプの試作など可能性を探る研究が中心で、生産的なものとはまだどの分野もなっていない。また、福岡県の調査からも九州地区では一部の大学の研究者を除いて、放射光研究にはなじみの無い状況である。応用分野では、結晶引き上げの研究や品質管理、LSIプロセスの品質管理と改善のための研究、等倍露光のマスク材料開発、縮小投影露光における、光学部品・機能性材料の開発、LIGAを用いたマイクロマシン、特に光通信技術との結合などで将来性のある応用分野が拓け、また、X線マイクロ光学素子が開発されれば、新しい応用が拓けることが分かった。さらに、これらの技術開発を行う点で解決しなければならない技術課題も調査した。この調査をもとに、新しく文部省科学研究補助金の申請を3グループから行ない、さらに1グループは他の補助金を申請する運びとなった。また、学内研究プロジェクトとして2件の提案を行った。さらにドイツのIMMとの研究協力が成立し、今後LIGAの学内研究プロジェクトをスタートする。
Si-O系の分子動力学に関する研究 Competitive
半導体固体液体界面に関する研究 Competitive
電子素子用単結晶育成に関する研究 Competitive
Molecular dynamics simulation of Si-O system Competitive
Solid-liquid interface-dynamics of semiconductors Competitive
Crystal growth for electronic devices Competitive

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Works 6

微小動下での融液成長シミュレーション

1997 -
低消費電力用半導体の創成のためのシミュレーション

1997 -
Simulation of melt growth under micro gravity

1997 -
Simulation for development of low-power semiconductor

1997 -
シリコンの固液界面のダイナミークス

1996 -
Dynamics of solid-liquid interface of silicon

1996 -

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